Wiring structure based on HTCC technology and preparation method thereof, ceramic housing

Abstract

The present invention provides a wiring structure based on HTCC technology, a preparation method thereof, and a ceramic housing, belonging to the field of high-frequency, high-speed ceramic packaging technology. The wiring structure based on HTCC technology includes: a lower ceramic component; and an upper ceramic component, which together with the lower ceramic component encloses an air cavity. At least one planar GCPW transmission line is formed on the upper surface of the lower ceramic component that forms the air cavity, and at least one vertical GCPW transmission line is formed on the upper surface of the lower ceramic component outside the air cavity and the upper and side surfaces of the upper ceramic component. The projection of the vertical GCPW transmission line on the lower ceramic component intersects the planar GCPW transmission line. Compared to a buried GCPW structure with the same characteristic impedance, the wiring structure based on HTCC technology provided by the present invention has a wider center conductor band width, is more convenient to manufacture, reduces process production difficulty, and is easy to implement.

Description

Technical Field

[0001] The present invention belongs to the technical field of high-frequency and high-speed ceramic packaging, and more specifically, relates to a wiring structure based on HTCC technology, a preparation method thereof, and a ceramic housing. Background Art

[0002] With the development of wireless communication technology, microwave and millimeter wave circuits and systems have been widely used and are developing towards higher frequency, higher speed, higher integration, higher complexity and miniaturization. Therefore, the packaging shells used for microwave and millimeter waves also need to improve the requirements.

[0003] For highly integrated components or systems, the complex interconnection between multiple microwave and millimeter-wave circuits may lead to cross-wiring. Traditional planar transmission line structures can no longer meet the cross-wiring requirements. HTCC (High-temperature co-fired ceramics) technology is required to design cross-connected transmission lines between different layers of ceramic dielectrics. The general structure is a transition form of surface GCPW (Grounded coplanar waveguide)-buried GCPW-surface GCPW, and the interconnection between different layers is achieved through metallized vias.

[0004] However, the above transmission line structure and the cross-interconnection transmission line realized by metallized vias have large losses. Moreover, as the frequency increases, the center conduction band width of the buried layer GCPW transmission line will decrease accordingly, and may even exceed the process production limit and become unachievable. Summary of the Invention

[0005] The present invention aims to provide a wiring structure based on HTCC technology, a method for preparing the same, and a ceramic housing. These structures aim to address the high losses in traditional transmission line structures and cross-connected transmission lines implemented with metallized vias. Furthermore, as the frequency increases, the central conductor width of the buried GCPW transmission line decreases accordingly, sometimes exceeding the process production limits and becoming unachievable.

[0006] To achieve the above object, the technical solution adopted by the present invention is:

[0007] In a first aspect, the present invention provides a wiring structure based on HTCC technology, comprising: a lower ceramic member; and an upper ceramic member, which together with the lower ceramic member encloses an air cavity; wherein at least one planar GCPW transmission line is formed on the upper surface of the lower ceramic member forming the air cavity, and at least one vertical GCPW transmission line is formed on the upper surface of the lower ceramic member outside the air cavity and on the upper surface and side surfaces of the upper ceramic member, wherein the projection of the vertical GCPW transmission line on the lower ceramic member is arranged to intersect with the planar GCPW transmission line.

[0008] In one possible implementation, the upper ceramic member includes: a top wall; and two side walls, each connected to the ends of the top wall, and both side walls are connected to the upper surface of the lower ceramic member, and the top wall, the side walls and the lower ceramic member together enclose the air cavity;

[0009] The vertical GCPW transmission line is formed on the upper surface of the lower ceramic component outside the air cavity, the side surfaces of the two side walls, and the upper surface of the top wall.

[0010] In a possible implementation, the two side walls are arranged perpendicular to the top wall, and the projection of the vertical GCPW transmission line on the lower ceramic component is arranged perpendicularly and cross-sectionally with the planar GCPW transmission line.

[0011] In a possible implementation, the surface of the upper ceramic component constituting the air cavity is a metallized surface.

[0012] In a possible implementation, the ground line in the planar GCPW transmission line is metallizedly connected to the ground line in the vertical GCPW transmission line and the lower surface of the lower ceramic component through a metallized via.

[0013] In a possible implementation, a surface of the planar GCPW transmission line and a surface of the vertical GCPW transmission line are plated with a nickel-gold surface layer.

[0014] The wiring structure based on HTCC technology provided by the present invention has at least the following technical effects: compared with conventional technologies, the wiring structure based on HTCC technology provided by the present invention achieves three-dimensional cross-connection between planar GCPW transmission lines and vertical GCPW transmission lines, making the planar GCPW transmission lines similar to coaxial cable structures, effectively reducing the loss of the planar GCPW transmission lines and the crosstalk between the planar GCPW transmission lines and the vertical GCPW transmission lines. Compared with a buried GCPW structure with the same characteristic impedance, the central guide band width is widened, making it more convenient to process and manufacture, reducing the difficulty of process production, and being easy to implement. When transmitting radio frequency signals, both the planar GCPW transmission lines and the vertical GCPW transmission lines have the capability of reaching the V band, with good transmission performance, low return loss and insertion loss, good isolation between the two radio frequency signals, good in-band flatness, and no resonance points.

[0015] In a second aspect, the present invention further provides a method for preparing a wiring structure based on HTCC technology, comprising the following steps:

[0016] Making raw porcelain pieces;

[0017] Air cavities are machined into the raw porcelain pieces;

[0018] Fabricate a planar GCPW transmission line metallization pattern on the surface of the green ceramic sheet forming the air cavity;

[0019] Fill the air cavity with sacrificial material and laminate the green ceramic sheets;

[0020] The green ceramic sheets are laminated and the interlayer density and cavity shape are controlled by adjusting the process parameters;

[0021] Cutting and splitting the green porcelain sheet into individual green porcelain pieces;

[0022] Fabricate vertical GCPW transmission line metallization patterns on the surface of a single green ceramic piece;

[0023] The green porcelain piece is subjected to a sintering process, during which the sacrificial material is burned away to produce a ceramic piece with an air cavity;

[0024] The ceramic component is subjected to surface nickel plating and surface gold plating to obtain a wiring structure based on HTCC technology.

[0025] In a possible implementation, the step of machining an air cavity on the green porcelain sheet further includes the step of machining a grounding hole on the green porcelain sheet.

[0026] In a possible implementation, in the step of forming a planar GCPW transmission line metallization pattern on the surface of the green ceramic sheet forming the air cavity, the planar GCPW transmission line metallization pattern is formed by using a screen printing technique;

[0027] and / or,

[0028] In the step of manufacturing the vertical GCPW transmission line metallization pattern on the surface of the single green ceramic piece, the vertical GCPW transmission line metallization pattern is manufactured using printing technology.

[0029] The method for preparing a wiring structure based on HTCC technology provided by the present invention is suitable for preparing a wiring structure based on HTCC technology as described in any of the above implementations. A sacrificial material is filled in the air cavity, so that the prepared wiring structure has a good cavity shape. By routing planar GCPW transmission lines and vertical GCPW transmission lines inside and outside the air cavity, transmission line loss and crosstalk between the two can be reduced. Compared with a buried GCPW structure with the same characteristic impedance, the center guide band width is widened, making processing and manufacturing more convenient, reducing process production difficulty, and being easy to implement. When transmitting radio frequency signals, the prepared planar GCPW transmission lines and vertical GCPW transmission lines can both reach the V band, have good transmission performance, low return loss and insertion loss, good isolation between the two radio frequency signals, good in-band flatness, and no resonance points.

[0030] In a third aspect, the present invention further provides a ceramic housing, comprising the wiring structure based on HTCC technology as described in any one of the above implementations.

[0031] The ceramic housing provided by the present invention includes the wiring structure based on HTCC technology as described in any of the above implementations. The two have the same technical effects and will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0033] Figure 1 This is a schematic diagram of a wiring structure based on HTCC technology according to an embodiment of the present invention;

[0034] Figure 2 A partial schematic diagram of a wiring structure based on HTCC technology according to an embodiment of the present invention;

[0035] Figure 3 A schematic structural diagram of a wiring structure based on HTCC technology from another angle according to an embodiment of the present invention;

[0036] Figure 4This is a simulation result diagram of a first RF signal passing through a planar GCPW transmission line according to an embodiment of the present invention;

[0037] Figure 5 This is a simulation result diagram of a second RF signal passing through a vertical GCPW transmission line according to an embodiment of the present invention;

[0038] Figure 6 This is a diagram showing the isolation simulation results when the first RF signal and the second RF signal pass through a planar GCPW transmission line and a vertical GCPW transmission line, respectively, according to an embodiment of the present invention;

[0039] Figure 7 A flowchart of a method for preparing a wiring structure based on HTCC technology according to an embodiment of the present invention;

[0040] Figure 8 FIG. 1 is a simplified process diagram of a method for manufacturing a wiring structure based on HTCC technology according to an embodiment of the present invention.

[0041] Description of reference numerals:

[0042] 100, wiring structure 110, lower ceramic component 120, upper ceramic component

[0043] 121, top wall 122, side wall 130, air cavity

[0044] 140, Planar GCPW Transmission Line 150, Vertical GCPW Transmission Line

[0045] 200, first radio frequency signal 300, second radio frequency signal DETAILED DESCRIPTION

[0046] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0047] It should be noted that when an element is referred to as being "connected to" or "connected to" another element, it can be directly connected to the other element or there may be an intervening element. When an element is referred to as being "disposed on," "set on," or "fixed on" another element, it can be directly on the other element or there may be an intervening element. "Multiple" refers to two or more. As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items.

[0048] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0049] Please also refer to Figures 1 to 8 Now, the wiring structure 100 based on HTCC technology and its manufacturing method and ceramic housing provided by an embodiment of the present invention are described.

[0050] See also Figures 1 to 3 An embodiment of the present invention provides a wiring structure 100 based on HTCC technology, including: a lower ceramic member 110; and an upper ceramic member 120, which together with the lower ceramic member 110 encloses an air cavity 130. At least one planar GCPW transmission line 140 is formed on the upper surface of the lower ceramic member 110, which forms the air cavity 130. At least one vertical GCPW transmission line 150 is formed on the upper surface of the lower ceramic member 110 outside the air cavity 130, and on the upper surface and side surfaces of the upper ceramic member 120. The projection of the vertical GCPW transmission line 150 on the lower ceramic member 110 intersects the planar GCPW transmission line 140.

[0051] It should be noted that the HTCC-based wiring structure 100 provided in this embodiment of the present invention is applicable to ceramic components such as alumina ceramics and aluminum nitride ceramics. It can solve interconnection issues between microwave and millimeter-wave circuits in situations requiring high frequency, high speed, high integration, and high complexity, and can improve the electrical performance and manufacturability of the transmission wiring structure 100 during the packaging process. Furthermore, the HTCC-based wiring structure 100 is a layout and wiring structure for RF signal transmission lines during the design and processing of millimeter-wave high-frequency, high-speed integrated circuit packaging. This type of structure can effectively improve the RF performance of transmission lines in the high-frequency band, reduce transmission losses, and promote the development of three-dimensional, miniaturized, and integrated packaging.

[0052] Specifically, the planar GCPW transmission line 140 and the vertical GCPW transmission line 150 can be provided in one, two, three, or more numbers, without limitation. The planar GCPW transmission line 140 is used to transmit the first RF signal 200, and the vertical GCPW transmission line 150 is used to transmit the second RF signal 300. The first RF signal 200 is transmitted from one end of the planar GCPW transmission line 140 to the other end, and the second RF signal 300 is transmitted from one end of the vertical GCPW transmission line 150 to the other end, specifically from one end of the top surface of the lower ceramic member 110 to the side surface of the upper ceramic member 120, then from the side surface to the top surface of the upper ceramic member 120, and then from the other opposite side surface to the top surface of the lower ceramic member 110.

[0053] like Figures 4 to 6 As shown, Figure 4 : is a simulation result diagram of the first RF signal 200 passing through the planar GCPW transmission line 140, wherein curve 1 is the return loss, curve 2 is the insertion loss, Figure 5: is a simulation result diagram of the second RF signal 300 passing through the vertical GCPW transmission line 150, wherein curve 3 is the return loss and curve 4 is the insertion loss. Figure 6 1 is a diagram showing the isolation simulation results when the first RF signal 200 and the second RF signal 300 pass through the planar GCPW transmission line 140 and the vertical GCPW transmission line 150 respectively, wherein curve 5 represents the isolation.

[0054] The wiring structure 100 based on HTCC technology provided by the embodiment of the present invention has at least the following technical effects: Compared with conventional technologies, the wiring structure 100 based on HTCC technology provided by the embodiment of the present invention achieves three-dimensional cross-connection between the planar GCPW transmission line 140 and the vertical GCPW transmission line 150, making the planar GCPW transmission line 140 similar to a coaxial line structure, effectively reducing the loss of the planar GCPW transmission line 140 and the crosstalk between the planar GCPW transmission line 140 and the vertical GCPW transmission line 150. Compared with a buried GCPW structure with the same characteristic impedance, the central guide band width is widened, making it more convenient to process and manufacture, reducing the difficulty of process production, and being easy to implement. When transmitting RF signals, the planar GCPW transmission line 140 and the vertical GCPW transmission line 150 can both reach the V band, with good transmission performance, low return loss and insertion loss, good isolation between the two RF signals, good in-band flatness, and no resonance points.

[0055] Based on the wiring structure 100 in the above embodiment, please refer to Figures 1 to 3 In some possible embodiments, the upper ceramic member 120 includes a top wall 121 and two side walls 122, each connected to the ends of the top wall 121. Both side walls 122 are connected to the upper surface of the lower ceramic member 110. The top wall 121, side walls 122, and lower ceramic member 110 collectively enclose an air cavity 130. A vertical GCPW transmission line 150 is formed on the upper surface of the lower ceramic member 110 outside the air cavity 130, the side surfaces of the two side walls 122, and the upper surface of the top wall 121. That is, the vertical GCPW transmission line 150 is formed on one end of the upper surface of the lower ceramic member 110, the side surface of one of the side walls 122, the upper surface of the top wall 121, the side surface of the other side wall 122, and the other end of the upper surface of the lower ceramic member 110.

[0056] Specifically, the two side walls 122 and the top wall 121 form a "ㄇ" shape, and are centered or offset on the upper surface of the lower ceramic component 110, so that the starting end and the ending end of the vertical GCPW transmission line 150 are provided at both ends of the upper surface of the lower ceramic component 110, so that the second RF signal 300 is first transmitted from one end of the lower ceramic component 110 to the side surface of one of the side walls 122, then to the upper surface of the top wall 121, then to the side surface of the side wall 122, and finally to the other end of the lower ceramic component 110.

[0057] Based on the upper ceramic member 120, in one specific embodiment, both sidewalls 122 are perpendicular to the top wall 121, and the projection of the vertical GCPW transmission line 150 on the lower ceramic member 110 is arranged perpendicularly and intersectingly with the planar GCPW transmission line 140. This arrangement reduces transmission loss and crosstalk between the planar GCPW transmission line 140 and the vertical GCPW transmission line 150, and also facilitates manufacturing.

[0058] In some possible implementations, the surface of the upper ceramic member 120 forming the air cavity 130 is a metallized surface. Specifically, the lower surface of the top wall 121 and the inner surface of the side wall 122 are both metallized to ensure a good grounding effect.

[0059] In some possible implementations, the ground line in the planar GCPW transmission line 140 is connected to the ground line in the vertical GCPW transmission line 150 and the metallized ground of the lower surface of the lower ceramic component 110 through metallized vias. This arrangement enables the entire wiring structure 100 to achieve a common ground effect.

[0060] In some possible implementations, the surface of the planar GCPW transmission line 140 and the surface of the vertical GCPW transmission line 150 are plated with a nickel-gold surface layer. This configuration can effectively reduce transmission line losses compared to buried GCPW structures made with tungsten slurry or molybdenum slurry.

[0061] Based on the above embodiment, the planar GCPW transmission line 140 is more similar to a coaxial line structure, wherein the central conduction strip of the planar GCPW transmission line 140 is equivalent to the central conductor of the coaxial line, the air cavity 130 is equivalent to the medium between the inner and outer conductors of the coaxial line, and the metallized surface of the air cavity 130 is equivalent to the outer conductor of the coaxial line, which can effectively reduce the loss of the planar GCPW transmission line 140 and the crosstalk between the planar GCPW transmission line 140 and the vertical GCPW transmission line 150.

[0062] Based on the same inventive concept, please refer to Figure 7 The embodiment of the present invention further provides a method for preparing a wiring structure based on HTCC technology, comprising the following steps:

[0063] S100, making raw porcelain pieces.

[0064] Specifically, the tape casting process is used to produce green ceramic sheets. First, a green ceramic tape is prepared and cut into a number of fixed-size green ceramic sheets. A suitable tape casting slurry is then formulated using a binder system. Specifically, a low glass transition temperature binder system can be used, though this is not limited to low glass transition temperatures. By pre-treating the carrier tape surface to improve its surface condition and to enrich it with hydroxyl, carboxyl, and amino groups, the binder concentration distribution in the green ceramic sheets is controlled, ensuring that a smaller positioning hydraulic pressure can be used during subsequent green ceramic sheet processing, thereby ensuring a good bonding effect between the layers of the entire ceramic sheet.

[0065] S200, processing an air cavity on the raw porcelain piece.

[0066] An air cavity of a desired shape is processed at a designated position on the green ceramic sheet by using mechanical punching, laser punching or a punching die.

[0067] S300, fabricating a planar GCPW transmission line metallization pattern on the surface of the green ceramic sheet forming the air cavity.

[0068] A metallization pattern corresponding to the planar GCPW transmission line is produced at a designated position on the surface of the green ceramic sheet forming the air cavity.

[0069] S400 , filling the air cavity with a sacrificial material and laminating the green ceramic sheets.

[0070] Specifically, the sacrificial material can improve its hardness and elastic modulus by adjusting the material and composition to ensure the formability when the cavity is closed, and the sacrificial material in the cavity is completely removed during the debinding process in the early stage of sintering. The sacrificial material is formed into a sacrificial material film strip of a certain thickness by casting, and is punched according to the shape of the air cavity. The sacrificial material can be burned out during the sintering process, and an acrylic resin with a low glass transition temperature is used, but not limited to this. During the processing of the green ceramic sheet, the shape after the cavity is closed is maintained by filling with the sacrificial material.

[0071] S500, laminating the stacked green ceramic sheets, and controlling the interlayer density and cavity shape by adjusting process parameters.

[0072] During the lamination process, the density between layers and the cavity shape can be adjusted through process parameters to meet the strength requirements.

[0073] S600, cutting and splitting the green porcelain sheet into individual green porcelain pieces.

[0074] The green porcelain sheet is cut and split into multiple green porcelain pieces according to the number of air cavities and target size, so as to facilitate graphic processing of each green porcelain piece and improve processing accuracy.

[0075] S700: Fabricate a vertical GCPW transmission line metallization pattern on the surface of a single green ceramic piece.

[0076] On the upper surface and side surfaces of the single green porcelain piece outside the air cavity, metallization patterns corresponding to the vertical GCPW transmission line are made at corresponding designated positions.

[0077] S800, sintering the green porcelain piece. During the sintering process of the green porcelain piece, the sacrificial material is burned away to prepare a ceramic piece with an air cavity.

[0078] During the sintering process, the sacrificial material is gradually burned away, which can keep the air cavity in the green porcelain part in a better shape and reduce shape damage.

[0079] S900: Perform nickel plating and gold plating on the surface of the ceramic component to obtain a wiring structure based on HTCC technology.

[0080] Specifically, nickel and gold plating on the surface of ceramic components can effectively reduce transmission line losses compared to buried GCPW structures prepared with tungsten or molybdenum slurries. This type of wiring structure based on HTCC technology is not only applicable to alumina ceramics, but also other ceramics such as aluminum nitride ceramics.

[0081] The method for preparing a wiring structure based on HTCC technology provided by the present invention is suitable for preparing a wiring structure based on HTCC technology as described in any of the above embodiments. A sacrificial material is filled in the air cavity, so that the prepared wiring structure has a good cavity shape. By routing planar GCPW transmission lines and vertical GCPW transmission lines inside and outside the air cavity, transmission line loss and crosstalk between the two can be reduced. Compared with a buried GCPW structure with the same characteristic impedance, the center guide band width is widened, making processing and manufacturing more convenient, reducing process production difficulty, and being easy to implement. When transmitting radio frequency signals, the prepared planar GCPW transmission lines and vertical GCPW transmission lines can both reach the V band, have good transmission performance, low return loss and insertion loss, good isolation between the two radio frequency signals, good in-band flatness, and no resonance points.

[0082] In some possible embodiments, the step of forming an air cavity in the green ceramic sheet further includes forming a grounding hole in the green ceramic sheet. It is understood that, given the need to achieve grounding for the entire structure, during the process of forming the air cavity, grounding holes can be simultaneously formed at the locations on the green ceramic sheet where grounding holes are required, using methods such as mechanical punching, laser drilling, or a punching die.

[0083] In some possible implementations, in the step of forming the planar GCPW transmission line metallization pattern on the surface of the green ceramic sheet forming the air cavity, the planar GCPW transmission line metallization pattern is formed by using screen printing technology.

[0084] Specifically, the metallization pattern corresponding to the planar GCPW transmission line can be fabricated using tungsten, molybdenum, gold, silver, copper, or other conductive materials. Metallization screen printing is used to create the corresponding metallization pattern on the lower surface of the air cavity. This arrangement improves the flexibility and versatility of metallization pattern fabrication, and the resulting metallization pattern better meets fabrication requirements.

[0085] And / or, in some possible implementations, in the step of forming a vertical GCPW transmission line metallization pattern on the surface of a single green ceramic piece, a printing technology is used to form the vertical GCPW transmission line metallization pattern.

[0086] Specifically, the metallization pattern corresponding to the vertical GCPW transmission line can be made of tungsten, molybdenum, gold, silver, copper, or other conductive materials. Printing is performed on the top and side surfaces of the green ceramic component, outside the air cavity. This arrangement increases the flexibility and versatility of metallization pattern production, making the resulting metallization pattern more compatible with manufacturing requirements.

[0087] Based on the preparation method in the above embodiment, in a specific embodiment, the following can be designed: Figure 8 The preparation process shown.

[0088] Based on the same inventive concept, an embodiment of the present invention further provides a ceramic housing, comprising the wiring structure based on HTCC technology as described in any of the above implementations.

[0089] The ceramic housing provided by the embodiment of the present invention includes the wiring structure based on HTCC technology as described in any of the above embodiments. The two embodiments have the same technical effects and will not be described in detail here.

[0090] It can be understood that the various parts in the above embodiments can be freely combined or deleted to form different combination embodiments. The specific contents of each combination embodiment will not be repeated here. After this description, it can be considered that the specification of the present invention has recorded various combination embodiments and can support different combination embodiments.

[0091] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for preparing a wiring structure based on HTCC technology, characterized in that: The wiring structure based on HTCC technology includes: a lower ceramic member; and An upper ceramic piece, together with the lower ceramic piece, forms an air cavity; At least one planar GCPW transmission line is formed on the upper surface of the lower ceramic member forming the air cavity, and the air cavity is open at both ends of the planar GCPW transmission line. At least one vertical GCPW transmission line is formed on the upper surface of the lower ceramic member outside the air cavity and the upper surface and side surface of the upper ceramic member. The projection of the vertical GCPW transmission line on the lower ceramic member is arranged to intersect with the planar GCPW transmission line. The method for preparing the wiring structure based on HTCC technology comprises the following steps: Making raw porcelain pieces; Processing air cavities on raw porcelain pieces; Fabricate a planar GCPW transmission line metallization pattern on the surface of the green ceramic sheet forming the air cavity; Fill the air cavity with sacrificial material and laminate the green ceramic sheets; The green ceramic sheets are laminated and the interlayer density and cavity shape are controlled by adjusting the process parameters; Cutting and splitting the green porcelain sheet into individual green porcelain pieces; Fabricate vertical GCPW transmission line metallization patterns on the surface of a single green ceramic piece; The green porcelain piece is subjected to a sintering process, during which the sacrificial material is burned away to produce a ceramic piece with an air cavity; The ceramic component is subjected to surface nickel plating and surface gold plating to obtain a wiring structure based on HTCC technology.

2. The preparation method according to claim 1, wherein The step of machining an air cavity on the green porcelain sheet further includes the step of machining a grounding hole on the green porcelain sheet.

3. The preparation method according to claim 1, wherein In the step of forming a planar GCPW transmission line metallization pattern on the surface of the green ceramic sheet forming the air cavity, the planar GCPW transmission line metallization pattern is formed by using screen printing technology; and / or, In the step of manufacturing the vertical GCPW transmission line metallization pattern on the surface of the single green porcelain piece, the vertical GCPW transmission line metallization pattern is manufactured using printing technology.

4. The method for preparing a wiring structure based on HTCC technology according to claim 1, wherein: The upper ceramic member comprises: a top wall; and two side walls, respectively connected to both ends of the top wall, and both side walls are connected to the upper surface of the lower ceramic member, the top wall, the side walls and the lower ceramic member together enclose the air cavity; The vertical GCPW transmission line is formed on the upper surface of the lower ceramic component outside the air cavity, the side surfaces of the two side walls, and the upper surface of the top wall.

5. The method for preparing a wiring structure based on HTCC technology according to claim 4, wherein: The two side walls are both arranged perpendicular to the top wall, and the projection of the vertical GCPW transmission line on the lower ceramic component is arranged perpendicularly and cross-sectionally with the planar GCPW transmission line.

6. The method for preparing a wiring structure based on HTCC technology according to claim 1, wherein: The surface of the upper ceramic component forming the air cavity is a metallized surface.

7. The method for preparing a wiring structure based on HTCC technology according to claim 1, wherein: The ground line in the planar GCPW transmission line is metallizedly connected to the ground line in the vertical GCPW transmission line and the lower surface of the lower ceramic component through a metallized via.

8. The method for preparing a wiring structure based on HTCC technology according to claim 1, wherein: The surface of the planar GCPW transmission line and the surface of the vertical GCPW transmission line are plated with a nickel-gold surface layer.

9. Ceramic housing, characterized in that A wiring structure based on HTCC technology prepared by the method for preparing a wiring structure based on HTCC technology according to any one of claims 1 to 8.

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