Communication Device and Millimeter-Wave Holographic Antenna

Abstract

The present invention relates to a communication device and a millimeter-wave holographic antenna. The millimeter-wave holographic antenna includes scattering units, a high-dielectric-constant material plate, and a feed network component. When an excitation signal is applied at the excitation port and a preset load is connected to the load port, the feed network component can correspondingly generate and output a TEM wave. When the TEM wave passes through the high-dielectric-constant material plate, the high dielectric constant is used to increase the reflectivity of the strip waveguide and reduce the propagation speed of the TEM wave. Under the action of the TEM wave, excitations can be generated at each first slot opening on the scattering unit, which is equivalent to a number of first unit antennas. The excitations at the openings of the number of first slots will be superimposed on each other, that is, the radiation patterns of the number of first unit antennas are superimposed, and a specified high-gain radiation pattern can be formed, and wide bandwidth and low profile can be achieved; in addition, when the propagation speed of the TEM wave decreases, the frequency scanning characteristic of the holographic structure is weakened, and wideband scanning characteristics can be achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of antenna communication, and particularly to a communication device and a millimeter-wave holographic antenna. Background Art

[0002] The 5G millimeter-wave beamforming technology generally mainly includes: active phased array antenna beamforming and holographic antenna beamforming. The advantage of active phased array antenna beamforming is that it uses a small spacing (the small spacing generally refers to the antenna spacing of about 1 / 2λ g , λ g (which can be the wavelength in the medium at the center frequency point)) to form a high-gain narrow beam with higher spatial resolution. The disadvantage is that the feed network design of the phased array antenna is relatively complex, and the cost of the entire device is relatively high. Holographic antenna beamforming refers to controlling the beam direction by changing the surface impedance of the holographic structure based on the optical principle. The holographic antenna consists of a feed source and a holographic structure.

[0003] There are many methods for the traditional research on the millimeter-wave holographic antenna beamforming technology. Some use the holographic beamforming antenna technology and varactor diodes to change the surface impedance of the holographic structure to achieve beam scanning. The obtained products have the advantages of low cost, small size, light weight, and low power consumption. Some use metamaterials to form holographic beams and control the beam pointing and antenna polarization through software control, and can perform satellite automatic identification and tracking, etc. Others use tight coupling or a small distance between radiation units to achieve a tunable broadband antenna with a broadband instantaneous bandwidth, or use different excitation methods, such as parallel plate waveguides, stripline waveguides, etc. to excite slots or patch antennas, and achieve different beam pointings of the holographic beam through the on-off control of diodes. However, the traditional millimeter-wave holographic antenna cannot simultaneously achieve broadband scanning characteristics and maintain beam pointing consistency. Summary of the Invention

[0004] Based on this, it is necessary to overcome the defects of the prior art and provide a communication device and a millimeter-wave holographic antenna, which can achieve broadband scanning characteristics, while maintaining beam pointing consistency, with simple process, small size, and easy integration.

[0005] The technical solution is as follows: a millimeter-wave holographic antenna, which includes: a scattering unit, a high-dielectric-constant material plate, and a feed network component. The scattering unit defines a plurality of sequentially spaced setting areas along its extending direction. A plurality of first slot openings are provided in some of the plurality of setting areas in a one-to-one correspondence. The length direction of the first slot openings is perpendicular to the extending direction of the scattering unit. The high-dielectric-constant material plate is disposed between the scattering unit and the feed network component. The feed network component is provided with an excitation port and a load port, and the feed network component is used to generate and output a TEM wave. The high-dielectric-constant material plate is used to reduce the transmission speed of the TEM wave and output the decelerated TEM wave to the scattering unit to excite the first slot openings of the scattering unit.

[0006] For the above-mentioned millimeter-wave holographic antenna, when an excitation signal is applied at the excitation port and a preset load is connected to the load port, the feed network component can correspondingly generate and output a TEM wave. When the TEM wave passes through the high-dielectric-constant material plate, the high dielectric constant is used to increase the reflectivity of the stripline waveguide and reduce the propagation speed of the TEM wave. On the one hand, under the action of the TEM wave, excitations can be generated at each of the first slot openings on the scattering unit, which is equivalent to a number of first unit antennas. The excitations at a number of first slot openings will be superimposed on each other, that is, the radiation patterns of a number of first unit antennas are superimposed, so as to form a specified high-gain radiation pattern, and broadband width and low profile can be achieved. On the other hand, when the propagation speed of the TEM wave decreases, the frequency scanning characteristic of the holographic structure is weakened, and the broadband scanning characteristic is realized. At the same time, it can be known from simulation tests that the beam pointing consistency is relatively good.

[0007] In one embodiment, the setting areas on the scattering unit are arranged in two rows, and one row of the setting areas is arranged in one-to-one correspondence with the other row of the setting areas. The first slot openings are arranged in two rows, and one row of the first slot openings is arranged in one-to-one correspondence with the other row of the first slot openings.

[0008] In one embodiment, the dielectric constant of the high-dielectric-constant material plate is 6-12; the thickness of the high-dielectric-constant material plate is 1.2 mm - 1.8 mm.

[0009] In one embodiment, the feed network component includes a first ground plane, a first core board, a conductive strip layer, a second core board, and a second ground plane arranged in sequence. The first ground plane is located between the high-dielectric-constant material plate and the first core board. A plurality of second slot openings are provided on the first ground plane, and the second slot openings are arranged in one-to-one correspondence with the setting areas. The conductive strip layer extends from one end of the first core board to the other end of the first core board. One end of the conductive strip layer is connected to the excitation port, and the other end of the conductive strip layer is connected to the load port.

[0010] In one embodiment, the center line of the projection of the conductive strip layer on the surface of the first core board coincides with the center line of the surface of the first core board.

[0011] In one embodiment, a plurality of spaced metallized vias are provided along the length direction on two opposite sides of the scattering unit; the metallized vias sequentially penetrate the first ground plane, the first core board, the second core board to the second ground plane from the scattering unit.

[0012] In one embodiment, the plurality of metallized vias on the side of the scattering unit are arranged at equal intervals; the distance between two adjacent metallized vias is 1.0 mm to 1.2 mm.

[0013] In one embodiment, a prepreg is provided between the first core board and the second core board; a prepreg is provided between the first core board and the first ground plane.

[0014] In one embodiment, the second slot openings are arranged in two rows, and one row of the second slot openings is arranged in one-to-one correspondence with the other row of the second slot openings.

[0015] In one embodiment, one row of the second slot openings and the other row of the second slot openings are symmetrically arranged about the center line of the first ground plane.

[0016] A communication device, the communication device includes the millimeter-wave holographic antenna described above.

[0017] For the above-mentioned millimeter-wave holographic antenna, when an excitation signal is applied at the excitation port and a preset load is connected to the load port, the feeding network component can correspondingly generate and output a TEM wave. When the TEM wave passes through the high-dielectric-constant material plate, the high dielectric constant is used to increase the reflectivity of the stripline waveguide and reduce the propagation speed of the TEM wave. On the one hand, under the action of the TEM wave, excitations can be generated at each of the first slot openings on the scattering unit, which is equivalent to a number of first unit antennas. The excitations at a number of first slot openings will be superimposed on each other, that is, the radiation patterns of a number of first unit antennas are superimposed, and then a specified high-gain pattern can be formed, and broadband width and low profile can be achieved; on the other hand, when the propagation speed of the TEM wave decreases, the frequency scanning characteristic of the holographic structure is weakened, and the broadband scanning characteristic is realized. At the same time, it can be known through simulation tests that the beam pointing consistency is better. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings constituting a part of this application are used to provide a further understanding of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation to the present invention.

[0019] To more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0020] Figure 1 Cross-sectional structure diagram of a millimeter-wave holographic antenna according to an embodiment of the present invention;

[0021] Figure 2 is Figure 1 Schematic structural diagram of the scattering unit in;

[0022] Figure 3 is Figure 1 Schematic structural diagram of the first ground plane in;

[0023] Figure 4 is Figure 1 Schematic structural diagram of the conductive strip layer located on the bottom surface of the first core board in;

[0024] Figure 5 is Figure 1 Schematic structural diagram of the second ground plane in;

[0025] Figure 6 is Figure 1 S-parameter diagram of the millimeter-wave holographic antenna shown in;

[0026] Figure 7 is Figure 1 Gain diagram of the millimeter-wave holographic antenna shown in at a working frequency of 25.5 GHz;

[0027] Figure 8 is Figure 1 Gain diagram of the millimeter-wave holographic antenna shown in at a working frequency of 26 GHz;

[0028] Figure 9 is Figure 1 Gain diagram of the millimeter-wave holographic antenna shown in at a working frequency of 26.5 GHz.

[0029] 10. Scattering unit; 11. Setting area; 12. First slit opening; 13. Metallized via; 20. High-dielectric-constant material board; 30. Feeding network component; 31. First ground plane; 311. Second slit opening; 32. First core board; 33. Conductive strip layer; 34. Second core board; 35. Second ground plane; 36. Prepreg. Detailed implementation manners

[0030] To make the above objects, features, and advantages of the present invention more apparent and understandable, the following provides a detailed description of the specific embodiments of the present invention in conjunction with the accompanying drawings. Many specific details are set forth in the following description to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

[0031] The millimeter-wave frequency bands for international mobile communications are 24.25 GHz - 7.5 GHz, 37 GHz - 43.5 GHz, and 66 GHz - 71 GHz respectively. In this article, the millimeter-wave holographic antenna will be mainly studied taking the millimeter-wave frequency band of 25.5 GHz - 26.5 GHz as an example, and the other frequency bands are similar and will not be elaborated.

[0032] Refer to Figure 1 And Figure 2 , Figure 1 shows a cross-sectional structural diagram of a millimeter-wave holographic antenna according to an embodiment of the present invention, Figure 2 shows Figure 1 a schematic structural diagram of the scattering unit 10 in Figure 2 As shown by the arrow y indicated in Figure 2 a plurality of sequentially spaced setting areas 11 (such as the dashed box area and the solid box area in Figure 2 ) are defined along the extending direction of the scattering unit 10. A plurality of first slit openings 12 (such as the solid box area in

[0033] ) are provided in one part of the plurality of setting areas 11 in a one-to-one correspondence. The length direction of the first slit opening 12 (the direction where the long side of the first slit opening 12 is located) is perpendicular to the extending direction y of the scattering unit 10. The high-dielectric-constant material plate 20 is disposed between the scattering unit 10 and the feed network assembly 30. The feed network assembly 30 is provided with an excitation port (not marked in the figure) and a load port (not marked in the figure), and the feed network assembly 30 is used to generate and output a TEM wave. The high-dielectric-constant material plate 20 is used to reduce the transmission speed of the TEM wave and output the decelerated TEM wave to the scattering unit 10 to excite the first slit openings 12 of the scattering unit 10.When an excitation signal is applied at the excitation port and a preset load is connected to the load port of the above-mentioned millimeter-wave holographic antenna, the feed network component 30 can correspondingly generate and output a TEM wave. When the TEM wave passes through the high-dielectric-constant material plate 20, the high dielectric constant is used to increase the reflectivity of the stripline waveguide and reduce the propagation speed of the TEM wave. On the one hand, under the action of the TEM wave, excitations can be generated at each of the first slot openings 12 on the scattering unit 10, which is equivalent to a number of first unit antennas. The excitations at the number of first slot openings 12 will be superimposed on each other, that is, the radiation patterns of the number of first unit antennas are superimposed, and a specified high-gain pattern can be formed, and broadband width and low profile can be achieved. On the other hand, when the propagation speed of the TEM wave decreases, the frequency scanning characteristic of the holographic structure is weakened, and broadband scanning characteristics are realized. At the same time, it can be known through simulation experiments that the beam pointing consistency is relatively good.

[0034] Please refer to Figure 1 and Figure 2 , in one embodiment, the setting areas 11 on the scattering unit 10 are arranged in two rows, and one row of setting areas 11 is arranged in one-to-one correspondence with the other row of setting areas 11. The first slot openings 12 are arranged in two rows, and one row of first slot openings 12 is arranged in one-to-one correspondence with the other row of first slot openings 12.

[0035] Specifically, the first slot opening 12 is, for example, a rectangular opening. The length of the rectangular opening is L1, and the width of the rectangular opening is W1. The length L1 is, for example, 2.9 mm to 3.1 mm, and the width W1 is, for example, 0.3 mm to 0.5 mm. In addition, the interval between adjacent setting areas 11 is S1, and the interval S1 is 0.2 mm to 0.4 mm. Specifically, the interval S1 between adjacent setting areas 11 is 0.33 mm.

[0036] Please refer to Figure 1 , in one embodiment, the dielectric constant of the high-dielectric-constant material plate 20 is 6-12. In this embodiment, the specific model of the high-dielectric-constant material plate 20 is RO4360G2TM, the dielectric constant is 6.4, and the dielectric loss is 0.0038. It should be noted that the high-dielectric-constant material plate 20 can also adopt other types of dielectric plates, which are not limited here and are set according to actual needs.

[0037] Please refer to Figure 1 , in one embodiment, the thickness of the high-dielectric-constant material plate 20 is T1, and the thickness T1 is 1.2 mm - 1.8 mm. In this embodiment, the thickness T1 is 1.52 mm. In this way, the thickness of the high-dielectric-constant material plate 20 is thick enough and close to the thickness of the feed network component 30, so as to ensure the laminated pressing effect of the two together with the feed network component 30. It should be noted that the thickness of the high-dielectric-constant material plate 20 can also be set to other sizes according to actual needs, which are not limited here.

[0038] Please refer to Figure 1 and Figures 3 to 5 , Figure 3 which shows Figure 1 a schematic structural diagram of the first ground plate 31 in Figure 4 which shows Figure 1 a schematic structural diagram of the conductive strip layer 33 located at the bottom surface of the first core plate 32 in Figure 5 which shows Figure 1 a schematic structural diagram of the second ground plate 35 in. In one embodiment, the feed network assembly 30 includes a first ground plate 31, a first core plate 32, a conductive strip layer 33, a second core plate 34, and a second ground plate 35 arranged in sequence. The first ground plate 31 is located between the high-dielectric-constant material plate 20 and the first core plate 32. The first ground plate 31 is provided with a plurality of second slit openings 311, and the second slit openings 311 are arranged in one-to-one correspondence with the setting areas 11. The conductive strip layer 33 extends from one end of the first core plate 32 to the other end of the first core plate 32. One end of the conductive strip layer 33 is connected to an excitation port (not shown in the figure), and the other end of the conductive strip layer 33 is connected to a load port (not shown in the figure).

[0039] It can be understood that the first ground plate 31, the conductive strip layer 33, and the second ground plate 35 can be metal layers such as copper, aluminum, iron, silver, and gold respectively.

[0040] Please refer to Figure 1 and Figure 4 , in one embodiment, the center line 0 of the projection of the conductive strip layer 33 on the surface of the first core plate 32 coincides with the center line of the surface of the first core plate 32. Thus, the conductive strip layer 33 is arranged at the central part of the surface of the first core plate 32, and the TEM wave generated in this way can better excite the scattering unit 10, so that the performance of the millimeter-wave holographic antenna meets the requirements.

[0041] Please refer to Figures 1 to 5 , in one embodiment, a plurality of spaced metallized vias 13 are provided along the length direction on two opposite sides of the scattering unit 10. The metallized vias 13 penetrate through the first ground plate 31, the first core plate 32, the second core plate 34, and the second ground plate 35 in sequence from the scattering unit 10. Thus, the spaced metallized vias 13 on two opposite sides of the scattering unit 10 play a shielding role, which can prevent the TEM wave generated by the conductive strip layer 33 from leaking outwards, so that the TEM wave all emits outwards through the second slit openings 311, and has a better excitation effect on the scattering unit 10.

[0042] Please refer to Figures 1 to 5, in one embodiment, a plurality of metallized vias 13 on the side of the scattering unit 10 are arranged at equal intervals. The distance between two adjacent metallized vias 13 is S2, and the distance S2 is 1.0 mm to 1.2 mm. Specifically, the distance S2 between two adjacent metallized vias 13 is 1.13 mm. In addition, the aperture of the metallized via 13 is D1, and the aperture D1 is 0.2 mm to 0.6 mm. For example, the aperture D1 is 0.4 mm. Of course, the aperture D1 of the metallized via 13 and the distance S2 between the metallized vias 13 can also be in other ranges, which are not limited herein and can be set according to actual requirements.

[0043] Please refer to Figure 1 , in one embodiment, a prepreg 36 is provided between the first core board 32 and the second core board 34. A prepreg 36 is provided between the first core board 32 and the first ground board 31. In this way, the prepreg 36 can firmly combine the first ground board 31, the first core board 32, and the second core board 34 together.

[0044] Specifically, the specific model of the prepreg 36 is, for example, RO4450F. The dielectric constant of the prepreg 36 of this model is 3.52, the dielectric loss is 0.004, and the thickness is 0.102 mm.

[0045] In addition, in this embodiment, the specific models of the first core board 32 and the second core board 34 are, for example, RO4533. The dielectric constant of the core board of this model is 3.45, the dielectric loss is 0.0025, and the thickness is 0.762 mm. Of course, the first core board 32 and the second core board 34 can also use core boards of other materials, which are not limited herein and can be set according to actual requirements.

[0046] Please refer to Figure 3 , in one embodiment, the second slot openings 311 are arranged in two rows, and one row of the second slot openings 311 is arranged in one-to-one correspondence with the other row of the second slot openings 311. Specifically, the second slot openings 311 are, for example, rectangular openings or square openings. The length of the second slot opening 311 is L2, and the width of the second slot opening 311 is W2. The length L2 is, for example, 0.7 mm - 1.1 mm, and the width W2 is, for example, 0.6 mm - 1.0 mm. As an example, the length L2 of the second slot opening 311 is 0.9 mm, and the width W2 is 0.8 mm.

[0047] Please refer to Figure 3 , the interval between two adjacent second slot openings 311 in one row is S3, and the interval S3 is 0.2 mm to 0.4 mm. Specifically, the interval S3 between two adjacent second slot openings 311 is 0.33 mm. Of course, the interval S3 can also be in other ranges, which are not limited herein and can be set according to actual requirements.

[0048] Please refer to Figure 3 In one embodiment, one row of second slot openings 311 and another row of second slot openings 311 are symmetrically arranged with respect to the center line of the first ground plane 31. Thus, based on the characteristics of the self-transmission direction of the TEM wave, the TEM wave is radiated outward through the two rows of second slot openings 311 that are symmetrically arranged with respect to the center line of the first ground plane 31, which has a good excitation effect on the scattering unit 10.

[0049] Please refer to Figure 2 It should be noted that the distance between one row of first slot openings 12 and another row of first slot openings 12 is S4, and the distance S4 is, for example, 0.2 mm - 0.8 mm. Specifically, the distance S4 is, for example, 0.5 mm. Of course, the distance S4 can also be other ranges, which are not limited herein and can be set according to actual requirements.

[0050] Please refer to Figure 3 It should be noted that the distance between one row of second slot openings 311 and another row of second slot openings 311 is S5, and the distance S5 is, for example, 0.1 mm - 0.3 mm. Specifically, the distance S5 is, for example, 0.2 mm. Of course, the distance S5 can also be other ranges, which are not limited herein and can be set according to actual requirements.

[0051] Please refer to Figures 2 to 5 The lengths of the scattering unit 10, the high-dielectric constant material plate 20, and the feed network component 30 are all L3, and the widths are all W3. The length L3 is, for example, 60 mm - 100 mm, specifically, for example, 79 mm. The width W3 is, for example, 5 mm - 15 mm, specifically, for example, 9 mm.

[0052] Please refer to Figure 1 and Figure 2 In one embodiment, a manufacturing method for the scattering unit 10 of a millimeter-wave holographic antenna includes the following steps:

[0053] Step S10: Determine the number n of the setting areas 11 on the scattering unit 10, the simulation frequency f, and the scanning angle θ0;

[0054] Specifically, n is specifically selected as 30, 50, 64, 100, 200, etc., and can be selected according to actual requirements; f is specifically, for example, 26 GHz, and can also be any frequency point in the range of 24.0 GHz to 28 GHz; θ0 is specifically, for example, 0°, ±20°, ±40°, ±60°, etc., and other angles can also be selected.

[0055] Step S20: Define the extension direction of the scattering unit 10 as the y-axis, the direction perpendicular to the extension direction of the scattering unit 10 and parallel to the surface of the scattering unit 10 as the x-axis, and the direction perpendicular to the surface of the scattering unit 10 as the z-axis. Then, based on the amplitude weighting principle of the holographic antenna, obtain the excitation amplitude value m of each setting area 11 according to n, f, and θ0.

[0056] It should be noted that the amplitude weighting principle of the holographic antenna is as follows. Taking a one-dimensional structure as an example, assume that the first slot opening 12 is distributed along the y-axis. That is, the reference wave and object wave expressions are respectively:

[0057] Ψ ref (y i ) = exp(-ik r y i )

[0058] Ψ obj (y i , θ0) = exp(-ik0θ0y i )

[0059] Among them, y i is the position information of the i-th first slot opening 12 on the holographic antenna structure, where i ranges from 0 to n, k r is the propagation constant of the reference wave, k0 is the propagation constant of the object wave, and θ0 is the pointing direction of the object wave beam.

[0060] According to the interference principle, the interference pattern Ψ(y i , θ0) recorded on the holographic structure can be expressed as:

[0061]

[0062] Among them, the interference pattern information containing the important object wave is:

[0063]

[0064] When the reference wave Ψ ref (y i ) acts on the holographic structure:

[0065] Ψ obj (y i , θ0) = Ψ qnf (y i , θ0)Ψ ref (y i ) / |Ψ ref (y i )| 2

[0066] As can be seen from the above formula, when the reference wave interacts with the holographic structure, an electromagnetic wave with a specific beam pointing θ0 can be obtained, i.e., Ψ obj (y i , θ0).

[0067] To obtain a beam with a specific beam pointing, the holographic structure should have the ability to change the radiation characteristics of the source antenna. That is, the phase shift k i at y r is regulated to k0(θ0)y i to generate a beam with a pointing beam of θ0. Based on the above theory, we provide a method of amplitude weighting to implement the holographic structure by regulating the amplitude information at y i . The amplitude function is expressed as: n where m(y

[0068]

[0069] , θ0) is the excitation amplitude value of the antenna at y i when the beam pointing is θ0, and ReΨ i (y qif (y i , θ0) is the real expression of the interference pattern, i.e., cos(k r y i -k0(θ0)y i ). When the phase value at y i is equal to the target value, m(y i , θ0) = 1, indicating that the antenna radiates the most energy at this point. When the phase value at y i is opposite to the target value, m(y i , θ0) = 0, indicating that the antenna radiates the least energy at this point. Therefore, the value range of m(y i , θ0) is 0 to 1.

[0070] Based on the amplitude weighting principle of the above holographic antenna, Table 1 below is obtained. Please refer to Table 1 below. Table 1 is the excitation amplitude value m of each setting area 11 obtained when the number of scattering units 10 of the millimeter-wave holographic antenna is 1, the number n of setting areas 11 is 64, and f is 26 GHz in one example. In Table 1, the 64 setting areas 11 are sequentially recorded as 1 to 64 in the y-axis direction.

[0071] Table 1

[0072] Serial number 1 2 3 4 5 6 7 8 9 10 m 0.6964 0.1543 0.032 0.4779 0.9507 0.8762 0.3449 0.0020 0.2637 0.8124 Serial number 11 12 13 14 15 16 17 18 19 20 m 0.9817 0.5661 0.070 0.0962 0.6125 0.9922 0.7742 0.2233 0.0083 0.3904 Serial number 21 22 23 24 25 26 27 28 29 30 m 0.9056 0.9282 0.430 0.0175 0.1899 0.7389 0.9978 0.6522 0.1218 0.0506 Serial number 31 32 33 34 35 36 37 38 39 40 m 0.5251 0.9691 0.843 0.3008 0.0000 0.3063 0.8478 0.9670 0.5191 0.0480 Serial number 41 42 43 44 45 46 47 48 49 50 m 0.1258 0.6580 0.998 0.7336 0.1852 0.0191 0.4369 0.9313 0.9020 0.3845 Serial number 51 52 53 54 55 56 57 58 59 60 m 0.0073 0.2283 0.779 0.9911 0.6066 0.0927 0.0733 0.5721 0.9833 0.8077 Serial number 61 62 63 64 m 0.2584 0.0025 0.350 0.8801

[0073] Step S30: Discretize the excitation amplitude value m of each setting area 11. The discretization threshold is t, where 0 < t < 1. When the excitation amplitude value m of the setting area 11 is not less than t, the obtained discrete result M is recorded as 1. When the excitation amplitude value m of the setting area 11 is less than t, the obtained discrete result M is recorded as 0;

[0074] Specifically, please refer to Table 2 below. Table 2 is obtained by discretizing Table 1 when t is 0.7.

[0075] Table 2

[0076] Serial number 1 2 3 4 5 6 7 8 9 10 M 0 0 0 0 1 1 0 0 0 1 Serial number 11 12 13 14 15 16 17 18 19 20 M 1 0 0 0 0 1 1 0 0 0 Serial number 21 22 23 24 25 26 27 28 29 30 M 1 1 0 0 0 1 1 0 0 0 Serial number 31 32 33 34 35 36 37 38 39 40 M 0 1 1 0 0 0 1 1 0 0 Serial number 41 42 43 44 45 46 47 48 49 50 M 0 0 1 1 0 0 0 1 1 0 Serial number 51 52 53 54 55 56 57 58 59 60 M 0 0 1 1 0 0 0 0 1 1 Serial number 61 62 63 64 M 0 0 0 1

[0077] Step S40: Set the first slot opening 12 in the corresponding setting area 11 according to the discrete result M of each setting area 11.

[0078] In the above manufacturing method of the scattering unit 10 of the millimeter-wave holographic antenna, excitation can be generated at each of the first slot openings 12 on the scattering unit 10, which is equivalent to a number of first unit antennas. The excitations at a number of the first slot openings 12 will be superimposed on each other, that is, the radiation patterns of a number of the first unit antennas are superimposed, so as to form a specified high-gain pattern, and broadband and low-profile can be achieved. The production process is relatively simple.

[0079] Further, the manufacturing method of the scattering unit 10 of the millimeter-wave holographic antenna further includes the following steps: adjust the size of the discrete threshold t, and obtain the simulation diagram of the millimeter-wave holographic antenna through electromagnetic software simulation for the millimeter-wave holographic antennas obtained according to different discrete thresholds t; compare the simulation diagram of the millimeter-wave holographic antenna with the theoretical simulation diagram of the amplitude weighting of the holographic antenna to find the required discrete threshold t. In this way, when the simulation diagram of the millimeter-wave holographic antenna is closest to the theoretical simulation diagram of the amplitude weighting of the holographic antenna, the discrete threshold t corresponding to the simulation diagram of the millimeter-wave holographic antenna is used as the required discrete threshold t.

[0080] Please refer to Figure 1 and Figure 2 , further, the specific method of setting the first slot opening 12 in the corresponding setting area 11 according to the discrete result M of each setting area 11 includes: if the discrete result M of the setting area 11 is 1, then set the first slot opening 12 in this setting area 11; if the discrete result M of the setting area 11 is 0, then do not set the first slot opening 12 in this setting area 11.

[0081] Please refer to Figure 1 and Figure 2 , in one embodiment, a communication device includes the millimeter-wave holographic antenna of any of the above embodiments.

[0082] When an excitation signal is applied at the excitation port and a preset load is connected to the load port of the above-mentioned millimeter-wave holographic antenna, the feeding network component 30 can correspondingly generate and output a TEM wave. When the TEM wave passes through the high-dielectric-constant material plate 20, the high dielectric constant is used to increase the reflectivity of the stripline waveguide and reduce the propagation speed of the TEM wave. On the one hand, under the action of the TEM wave, excitations can be generated at each of the first slot openings 12 on the scattering unit 10, which is equivalent to a number of first unit antennas. The excitations at the number of first slot openings 12 will be superimposed on each other, that is, the radiation patterns of the number of first unit antennas are superimposed, and a specified high-gain pattern can be formed, and broadband width and low profile can be achieved. On the other hand, when the propagation speed of the TEM wave decreases, the frequency scanning characteristic of the holographic structure is weakened, and the broadband scanning characteristic is realized. At the same time, it can be known through simulation tests that the beam pointing consistency is relatively good.

[0083] Please refer to Figures 6 to 9 , Figure 6 which shows Figure 1 the S-parameter diagram of the millimeter-wave holographic antenna shown in Figure 6 . It can be seen from

[0084] Please refer to Figure 7 , Figure 7 which shows Figure 1 the gain diagram of the millimeter-wave holographic antenna shown in Figure 8 when the operating frequency is 25.5 GHz. Please refer to Figure 8 which shows Figure 1 the gain diagram of the millimeter-wave holographic antenna shown in Figure 9 when the operating frequency is 26 GHz. Please refer to Figure 9 which shows Figure 1 the gain diagram of the millimeter-wave holographic antenna shown in Figure 7 to from Figure 9It can be seen that, in the case of the threshold M = 0.7 and the scanning state of 0°, the maximum gains of the antenna at 25.5 GHz, 26.0 GHz, and 26.5 GHz are 10.12 dBi, 12.2 dBi, and 10.4 dBi respectively. The 3dB beam widths in the phi = 90° plane are 9.15°, 9.34°, and 8.41° respectively. The beam pointing directions are -2°, -1°, and 1° respectively. This shows that the beam pointing of the antenna in the range of 25.5 - 26.5 GHz is consistent with the algorithm and has the characteristics of high gain and narrow beam.

[0085] The technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0086] The above embodiments only represent several implementation manners of the present invention. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the invention patent. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can still be made, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the invention patent should be subject to the appended claims.

[0087] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0088] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined.

[0089] In the present invention, unless otherwise clearly defined or limited, terms such as "installed", "connected", "joined", "fixed", etc. shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two components or the interaction relationship between two components, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0090] In the present invention, unless otherwise clearly defined or limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "beneath" and "underneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0091] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "up", "down", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation.

Claims

1. A millimeter-wave holographic antenna, characterized in that The millimeter-wave holographic antenna includes: Scattering units, a high-dielectric-constant material plate, and a feed network component. The scattering units define a plurality of sequentially spaced setting areas along its extending direction. A plurality of first slot openings are provided in some of the plurality of setting areas in a one-to-one correspondence. The length direction of the first slot openings is perpendicular to the extending direction of the scattering units. The high-dielectric-constant material plate is disposed between the scattering units and the feed network component. The feed network component is provided with an excitation port and a load port, and the feed network component is used to generate and output a TEM wave. The dielectric constant of the high-dielectric-constant material plate is 6-12, and the high-dielectric-constant material plate is used to reduce the transmission speed of the TEM wave and output the decelerated TEM wave to the scattering units to excite the first slot openings of the scattering units.

2. The millimeter-wave holographic antenna according to claim 1, wherein The setting areas on the scattering units are arranged in two rows, and one row of the setting areas is arranged in one-to-one correspondence with the other row of the setting areas. The first slot openings are arranged in two rows, and one row of the first slot openings is arranged in one-to-one correspondence with the other row of the first slot openings.

3. The millimeter-wave holographic antenna according to claim 1, wherein The thickness of the high-dielectric-constant material plate is 1.2 mm - 1.8 mm.

4. The millimeter-wave holographic antenna according to claim 1, wherein, The feed network component includes a first ground plane, a first core board, a conductive strip layer, a second core board, and a second ground plane arranged in sequence. The first ground plane is located between the high-dielectric-constant material plate and the first core board. A plurality of second slot openings are provided on the first ground plane, and the second slot openings are arranged in one-to-one correspondence with the setting areas. The conductive strip layer extends from one end of the first core board to the other end of the first core board. One end of the conductive strip layer is connected to the excitation port, and the other end of the conductive strip layer is connected to the load port.

5. The millimeter-wave holographic antenna according to claim 4, characterized in that, The center line of the projection of the conductive strip layer on the first core board surface coincides with the center line of the first core board surface.

6. The millimeter-wave holographic antenna according to claim 4, wherein A plurality of spaced metallized vias are provided along the length direction on two opposite sides of the scattering units. The metallized vias penetrate through the first ground plane, the first core board, the second core board, and the second ground plane in sequence from the scattering units.

7. The millimeter-wave holographic antenna according to claim 6, characterized in that, The plurality of metallized vias on the side of the scattering units are equally spaced; the distance between two adjacent metallized vias is 1.0 mm - 1.2 mm.

8. The millimeter-wave holographic antenna according to claim 4, wherein A prepreg is provided between the first core board and the second core board; a prepreg is provided between the first core board and the first ground plane.

9. The millimeter-wave holographic antenna according to claim 4, wherein The second slot openings are arranged in two rows, and one row of the second slot openings is arranged in one-to-one correspondence with the other row of the second slot openings.

10. The millimeter-wave holographic antenna according to claim 9, characterized in that, One row of the second slot openings and the other row of the second slot openings are symmetrically arranged with respect to the center line of the first ground plane.

11. A communication device, characterized in that, The communication device includes the millimeter-wave holographic antenna according to any one of claims 1 to 9.

Images