Electronic substrate and electronic device

Abstract

The present disclosure provides an electronic substrate and an electronic device. The electronic substrate includes a base, a protrusion, and a bonding pad. The protrusion and the bonding pad are disposed on the base. The bonding pad does not overlap with the edge of the protrusion.

Description

Technical Field

[0001] The present disclosure relates to an electronic substrate and an electronic device including the electronic substrate. Background Art

[0002] Electronic substrates and / or electronic devices must pass a series of reliability tests before leaving the factory. During thermal shock testing, substrates with light-emitting diodes (LEDs) soldered onto them are prone to cracking or LED peeling during thermal shock testing due to the mismatch in the coefficient of thermal expansion (CTE) between the LEDs and the substrate (e.g., glass), resulting in dark spots. Summary of the Invention

[0003] The present disclosure provides an electronic substrate and an electronic device, which help to improve reliability.

[0004] According to one embodiment of the present disclosure, an electronic substrate includes a base, a protrusion, and a bonding pad. The protrusion and the bonding pad are disposed on the base. The bonding pad does not overlap with a boundary of the protrusion.

[0005] According to another embodiment of the present disclosure, an electronic device includes the aforementioned electronic substrate and an electronic component, wherein the electronic component is electrically connected to the bonding pad.

[0006] In order to make the above features and advantages of the present disclosure more clearly understood, embodiments are given below with reference to the accompanying drawings for detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 is a partial cross-sectional schematic diagram of an electronic device according to a first embodiment of the present disclosure;

[0008] Figure 2 yes Figure 1 A partial top view of the electronic substrate;

[0009] Figure 3 is a partial cross-sectional schematic diagram of an electronic device according to a second embodiment of the present disclosure;

[0010] Figure 4 is a partial top view schematic diagram of an electronic device according to a third embodiment of the present disclosure;

[0011] Figure 5 FIG. 4 is a partial cross-sectional diagram of an electronic device according to a fourth embodiment of the present disclosure. DETAILED DESCRIPTION

[0012] The present disclosure will be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, for ease of understanding and for simplicity, many of the drawings in this disclosure depict only portions of electronic devices / displays, and certain components in the drawings are not drawn to scale. Furthermore, the number and dimensions of components in the drawings are for illustration only and are not intended to limit the scope of this disclosure. For example, the relative sizes, thicknesses, and positions of various layers, regions, or structures may be reduced or exaggerated for clarity.

[0013] Throughout this disclosure and the following claims, certain terms are used to refer to specific components. Those skilled in the art will appreciate that electronic device manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that have the same function but are named differently. In the following description and claims, words such as "having" and "including" are open-ended and should be interpreted as meaning "including, but not limited to..."

[0014] Directional terms mentioned herein, such as "upper," "lower," "front," "backward," "left," "right," etc., are used only with reference to the directions in the accompanying drawings. Therefore, the directional terms used are for illustrative purposes only and are not intended to limit the present disclosure. It should be understood that when an element or film layer is referred to as being "on" or "connected to" another element or film layer, the element or film layer may be directly on or directly connected to the other element or film layer, or there may be an intervening element or film layer between the two (indirect case). Conversely, when an element or film layer is referred to as being "directly on" or "directly connected to" another element or film layer, there may be no intervening element or film layer between the two.

[0015] The terms "approximately," "equal to," "equal to," "the same as," "substantially," or "approximately" mentioned herein generally represent falling within 10% of a given value or range, or falling within 5%, 3%, 2%, 1%, or 0.5% of a given value or range. In addition, the phrases "a given range is from a first value to a second value," and "a given range falls within the range from a first value to a second value" indicate that the given range includes the first value, the second value, and other values ​​therebetween.

[0016] In some embodiments of the present disclosure, terms such as "connected" and "interconnected," unless otherwise specified, may refer to two structures being in direct contact, or may refer to two structures not being in direct contact, with another structure positioned between them. Terms such as "connected" and "interconnected" may also include situations where both structures are movable or both structures are fixed. Furthermore, the terms "electrically connected" and "coupled" encompass any direct and indirect electrical connection means.

[0017] In the following embodiments, the same or similar elements will be denoted by the same or similar reference numerals, and their redundant description will be omitted. In addition, the features in different embodiments may be mixed and matched as desired, as long as they do not violate the spirit of the invention or conflict with each other, and simple equivalent changes and modifications made in accordance with this specification or claims are still within the scope of this disclosure. In addition, the terms "first" and "second" mentioned in this specification or claims are only used to name different elements or distinguish different embodiments or scopes, and are not used to limit the upper or lower limit on the number of elements, nor are they used to limit the manufacturing order or arrangement order of the elements.

[0018] The electronic device disclosed herein may include a display device, an antenna device, a sensing device, a light-emitting device, or a splicing device, but is not limited thereto. The electronic device may include a bendable or flexible electronic device. The electronic device may, for example, include a liquid crystal layer or a light-emitting diode. The light-emitting diode may, for example, include an organic light-emitting diode (OLED), a sub-millimeter light-emitting diode (mini LED), a micro LED, or a quantum dot light-emitting diode (quantum dot LED, which may include QLED, QDLED), fluorescence, phosphor or other suitable materials, or a combination thereof, but is not limited thereto. The following text will use a display device as an electronic device to illustrate the contents of the present disclosure, but the present disclosure is not limited thereto.

[0019] The display device disclosed herein may be any type of display device, such as a self-luminous display device or a non-self-luminous display device. The self-luminous display device may include a light-emitting diode, a light conversion layer or other suitable materials, or a combination thereof, but is not limited thereto. The light-emitting diode may, for example, include an organic light emitting diode (OLED), a sub-millimeter light-emitting diode (mini LED), a micro light-emitting diode (micro LED) or a quantum dot light-emitting diode (quantum dot LED, which may include QLED, QDLED), but is not limited thereto. The light conversion layer may include a wavelength conversion material and / or a light filtering material, and the light conversion layer may, for example, include fluorescence, phosphor, quantum dot (QD), other suitable materials or a combination thereof, but is not limited thereto. The non-self-luminous display device may include a liquid crystal display device, but is not limited thereto.

[0020] Figure 1 FIG. 1 is a partial cross-sectional diagram of an electronic device according to a first embodiment of the present disclosure. Figure 2 yes Figure 1 A partial top view of the electronic substrate in Figure 1. To simplify the diagram, Figure 2 Only two-point chain line, dotted line and one-point chain line are used to mark Figure 1 The middle protrusion, the first conductive layer and the edge of the pad definition layer are shown, and other elements and film layers are omitted. Figure 2 The section of the section line A-A' can be referred to Figure 1 .

[0021] Please refer to Figure 1 and Figure 2 The electronic device 1 may include a substrate 10 and an electronic component 12. For example, the substrate 10 may be an electronic substrate. The electronic substrate (substrate 10) may include a base 100, a protrusion 101, and a bonding pad 102, but is not limited thereto.

[0022] The substrate 100 can be used to support the protrusion 101 and the bonding pad 102. For example, the material of the substrate 100 may include glass, but is not limited thereto. In some embodiments, the substrate 100 may be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate 100 may include glass, plastic, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), quartz, sapphire, ceramic, or a combination thereof, that is, the substrate 100 may be a single-layer board or a composite board, but is not limited thereto.

[0023] The protrusion 101 is disposed on the substrate 100. For example, the protrusion 101 may be formed from a planar layer. In some embodiments, the planar layer may be an organic insulating layer, but is not limited thereto. In some embodiments, the protrusion 101 may be formed from a single organic insulating layer. In other embodiments, the protrusion 101 may be formed from a stack of multiple organic insulating layers. In some embodiments, the protrusion 101 may be an organic insulating layer, an inorganic insulating layer, or a combination thereof.

[0024] The bonding pad 102 is disposed on the substrate 100 and can be used to bond with the electronic component 12, but is not limited to this. For example, the electronic component 12 may be a light-emitting diode. The light-emitting diode may, for example, include a sub-millimeter light-emitting diode (mini LED), a micro light-emitting diode (micro LED), or a quantum dot light-emitting diode (quantum dot LED, which may include QLED, QDLED), but is not limited to this. In addition, the electronic component 12 may include a pad 120. In some embodiments, the electronic device 1 may further include a conductive adhesive layer 13 (such as a tin layer). The pad 120 can be soldered to the bonding pad 102 through the conductive adhesive layer 13, so that the electronic component 12 is electrically connected to the bonding pad 102, but is not limited to this. In some embodiments, the bonding pad 102 may include a double-layer stacked structure. For example, the bonding pad 102 may include a first conductive layer 102-1 and a second conductive layer 102-2 stacked in sequence on the substrate 100. The first conductive layer 102-1 and the second conductive layer may be metal layers or metal alloy layers. Specifically, the first conductive layer 102-1 may include a copper layer, and the second conductive layer 102-2 may include a nickel layer, but the present invention is not limited thereto. Compared to the first conductive layer 102-1, the second conductive layer 102-2 may have a higher adhesion to the conductive adhesive layer 13 to improve the adhesion of the electronic component 12 to the bonding pad 102, but the present invention is not limited thereto. The first conductive layer 102-1 and the second conductive layer 102-2 may have the same or different thicknesses. In other embodiments, with appropriate material selection, the bonding pad 102 may also be composed of a single conductive layer.

[0025] In some embodiments, the bonding pad 102 is disposed on the substrate 100 after the protrusion 101. For example, the electronic substrate 10 may further include an insulating layer (e.g., a fourth insulating layer 107). The insulating layer (e.g., the fourth insulating layer 107) is disposed on the protrusion 101, and the bonding pad 102 may be disposed on the insulating layer (e.g., the fourth insulating layer 107).

[0026] Due to the mismatch in thermal expansion coefficients between the electronic component 12 and the substrate 100, stress may be generated between the electronic component 12 and the substrate 100 due to thermal expansion and contraction during thermal shock testing of the electronic device 1. In the case of uneven solder joints, such as uneven surfaces of the bonding pads 102 (e.g., uneven surfaces of the copper layer), significant stress can easily be generated between the electronic component 12 and the substrate 100, leading to cracking of the substrate 100 or delamination of the electronic component 12.

[0027] According to observations, the location where the maximum stress is generated between the electronic component 12 and the substrate 100 may occur at the boundary B of the protrusion 101 (i.e., the boundary where the protrusion 101 begins to climb), that is, the substrate 100 is easily broken at the boundary B of the protrusion 101, where the crack starts from the boundary B of the protrusion 101 and ends in the substrate 100.

[0028] In the disclosed embodiments, the bonding pad 102 does not overlap with the boundary B of the protrusion 101. Thus, the bonding pad 102 does not overlap with the location where the maximum stress may be generated (i.e., the boundary B of the protrusion 101). This reduces the stress generated between the electronic component 12 and the substrate 100 and improves the flatness of the solder joint (e.g., the flatness of the surface of the bonding pad 102 or the flatness of the surface on which the copper layer is disposed), thereby reducing the probability of cracking of the substrate 100 or peeling of the electronic component 12. According to some embodiments, a gap G is defined between the bonding pad 102 and the boundary B of the protrusion 101. For example, the bonding pad 102 and the boundary B do not overlap in the thickness direction DT of the electronic device 1. In some embodiments, considering current process accuracy (e.g., exposure accuracy) and the small size requirements of the electronic device 1, the gap G between the bonding pad 102 and the boundary B may be within a range of 5 μm to 100 μm, i.e., 5 μm ≦ G ≦ 100 μm, but is not limited thereto. In other embodiments, the gap G between the bonding pad 102 and the boundary B may be zero, that is, the bonding pad 102 may be flush or substantially flush with the boundary B. According to some embodiments, the gap G may be within a range of 0 μm to 300 μm. According to some embodiments, the gap G may be within a range of 0 μm to 200 μm. According to some embodiments, the gap G may be greater than zero. According to some embodiments, the gap G may be within a range of 5 μm to 200 μm. According to some embodiments, the gap G may be within a range of 5 μm to 100 μm. According to some embodiments, the gap G may be within a range of 5 μm to 50 μm. According to some embodiments, the gap G may be within a range of 5 μm to 10 μm. According to some embodiments, the gap G may be the gap between the first conductive layer 102-1 of the bonding pad 102 and the protrusion 101. According to some embodiments, the gap G may be the gap between the second conductive layer 102-2 and the protrusion 101.

[0029] On the other hand, when the boundary B of the bonding pad 102 overlaps with the protrusion 101 (not shown), specifically, a portion of the bonding pad 102 overlaps with a portion of the protrusion 101 in the thickness direction DT. Figure 1 As shown, the protrusion 101 may have a slope at its edge. For example, the bonding pad 102 is disposed on the boundary B of the protrusion 101 and is formed along the slope of the protrusion 101. Because the bonding pad 102 is formed along the slope of the protrusion 101, the overlapping portion of the bonding pad 102 has an uneven surface, which can easily generate significant stress between the electronic component 12 and the substrate 100, causing cracks in the substrate 100 or peeling of the electronic component 12.

[0030] The substrate crack rate refers to the ratio of the number of electronic components that peel off or cannot operate normally due to substrate cracks to the total number of electronic components on the same substrate. Whether the electronic component peels off or can operate normally (that is, whether the electronic component can be lit) can be observed by an optical microscope (OM). Taking the substrate as glass as an example, according to experimental results, compared with the design in which the bonding pad overlaps with the boundary of the protrusion, in some embodiments, the design in which the bonding pad does not overlap with the boundary of the protrusion can reduce the substrate crack rate from 11.5% to 2%. In addition, according to simulation results, compared with the design in which the bonding pad overlaps with the boundary of the protrusion, in some embodiments, the design in which the bonding pad does not overlap with the boundary of the protrusion can reduce the maximum stress from 2905MPa to 752MPa. Therefore, in some embodiments, the design in which the bonding pad 102 does not overlap with the boundary B of the protrusion 101 helps to improve the reliability of the electronic device 1.

[0031] According to different needs, such as Figure 1 As shown, the electronic substrate 10 may further include other elements or layers. For example, the electronic substrate 10 may further include a driving element 103 , a first insulating layer 104 , a second insulating layer 105 , a third insulating layer 106 , a fourth insulating layer 107 , and a pad definition layer 108 .

[0032] Please refer to Figure 1The driving element 103 may be disposed on the substrate 100 and, for example, include a gate electrode (not shown), a channel layer CH, a source electrode (not shown), and a drain electrode DE. The driving element 103 may be, for example, a thin film transistor, which may be a top-gate thin film transistor or a bottom-gate thin film transistor, but is not limited thereto. Taking the driving element 103 as an example of a bottom-gate thin film transistor, the gate electrode is disposed on the substrate 100. The material of the gate electrode may include, but is not limited to, a metal, an alloy, or a combination thereof. The first insulating layer 104 is disposed on the gate electrode and the substrate 100. The first insulating layer 104 may include, but is not limited to, an inorganic insulating layer, such as silicon oxide (SiOx) or silicon nitride (SiNx). The channel layer CH is disposed on the first insulating layer 104 and is located above the gate electrode. The material of the channel layer CH may include, but is not limited to, amorphous silicon, polycrystalline silicon, or metal oxide. The second insulating layer 105 is disposed on the channel layer CH and the first insulating layer 104. The second insulating layer 105 may include an inorganic insulating layer, such as, but not limited to, silicon oxide (SiOx) or silicon nitride (SiNx). The second insulating layer 105 has an opening A1. The opening A1 exposes a portion of the channel layer CH. The source and drain electrodes DE are disposed on the second insulating layer 105 and contact the channel layer CH through different openings A1. The material of the source and drain electrodes DE may include, but is not limited to, metal, alloy, or a combination thereof. The third insulating layer 106 is disposed on the second insulating layer 105, the source and drain electrodes DE. The third insulating layer 106 may include an inorganic insulating layer, such as, but not limited to, silicon oxide (SiOx) or silicon nitride (SiNx). The third insulating layer 106 has an opening A2. The opening A2 exposes a portion of the drain electrode DE. The protrusion 101 is disposed on the third insulating layer 106. The fourth insulating layer 107 is disposed on the protrusion 101 and the third insulating layer 106. The fourth insulating layer 107 may include an inorganic insulating layer, such as silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. The fourth insulating layer 107 has an opening A3. The opening A3 is connected to the opening A2 and exposes a portion of the drain electrode DE.

[0033] Continue to refer to Figure 1 , the bonding pad 102 may include a first conductive layer 102-1 and a second conductive layer 102-2. The first conductive layer 102-1 may be disposed on the fourth insulating layer 107, wherein the first conductive layer 102-1 of at least one bonding pad 102 may contact the drain DE through the opening A2 and the opening A3. The pad definition layer 108 is disposed on the fourth insulating layer 107 and covers a portion E102-1 of the first conductive layer 102-1 of each bonding pad 102. The second conductive layer 102-2 may be disposed on the first conductive layer 102-1 and may cover a portion E108 of the pad definition layer 108. According to some embodiments, as Figure 1As shown, on the same side of the electronic component 12, the edge E1 of the first conductive layer 102-1 may be closer to the boundary B of the protrusion 101 than the edge E2 of the second conductive layer 102-2. Thus, a portion of the pad definition layer 108 may cover a portion of the first conductive layer 102-1, such as the portion E102-1. According to some embodiments (not shown), on the same side of the electronic component 12, the edge E1 of the first conductive layer 102-1 may be farther from the boundary B of the protrusion 101 than the edge E2 of the second conductive layer 102-2.

[0034] It should be understood that although Figure 1 Only one electronic component 12 is shown, but any number of electronic components 12 may be provided on the electronic substrate 10 as needed. Furthermore, the type of electronic component 12 may vary as needed and is not limited to light-emitting diodes. In the case where the electronic component 12 is a light-emitting diode, the electronic device 1 may be, for example, a light-emitting device, a display device (e.g., a non-luminous display device), or a tiled display device, but is not limited thereto.

[0035] Figure 3 This is a partial cross-sectional diagram of an electronic device according to the second embodiment of the present disclosure. Figure 3 , the electronic device 1A and Figure 1 The main differences between the electronic device 1 and the electronic device 1 are described below. The electronic device 1A includes an electronic substrate 10A, an electronic component 12, a conductive adhesive layer 13, and a circuit board 14. The electronic substrate 10A may be, for example, a chip integrating active components (such as thin-film transistors) and passive components (such as capacitors or resistors). For example, the electronic substrate 10A may include a driver circuit, but this is not limited to this. Figure 3 The electronic substrate 10A is schematically shown to have Figure 1 The electronic substrate 10A has a similar structure to the electronic substrate 10, but the difference is that the electronic substrate 10A further includes a circuit layer 109 disposed between the base 100 and the third insulating layer 106. To clearly illustrate the circuit layer 109, Figure 3 Some layers and components of the electronic substrate 10A are omitted. Figure 1 .

[0036] The electronic substrate 10A and the electronic component 12 are bonded to the same side of the circuit board 14 and are electrically connected to the electronic substrate 10A and the electronic component 12 through the circuit board 14. For example, the circuit board 14 may include a circuit substrate 140, bonding pads 141, and a protective layer 142.

[0037] The circuit substrate 140 may include a plurality of metal layers (not shown) and a plurality of insulating layers (not shown) stacked alternately. The bonding pads 141 are disposed on the circuit substrate 140 and may be used to bond with the electronic component 12 and the electronic substrate 10A, but are not limited thereto. For example, the pads 120 of the electronic component 12 and the bonding pads 102 of the electronic substrate 10A may be soldered to the bonding pads 141 via a conductive adhesive layer 13 (e.g., a tin layer), thereby electrically connecting the electronic component 12 and the bonding pads 102, but are not limited thereto. In some embodiments, the bonding pads 141 may include a double-layer stacked structure. For example, the bonding pads 141 may include a first conductive layer 141-1 (e.g., a copper layer) and a second conductive layer 141-2 (e.g., a nickel layer) stacked sequentially on the circuit substrate 140, wherein the second conductive layer 141-2 may have a higher bonding strength to the conductive adhesive layer 13 than the first conductive layer 141-1, thereby improving the bonding strength of the electronic component 12 and the electronic substrate 10A to the bonding pads 141, but are not limited thereto. In other embodiments, with appropriate material selection, the bonding pad 141 may also be formed by a single conductive layer.

[0038] The protective layer 142 is disposed on the circuit substrate 140 and a portion of the first conductive layer 141-1. Specifically, the protective layer 142 has a plurality of openings A4. The openings A4 expose the areas of the first conductive layer 141-1 where the second conductive layer 141-2 is to be disposed, thereby facilitating the deposition of the second conductive layer 141-2 on the first conductive layer 141-1. The protective layer 142 may be made of, but is not limited to, solder resist or photoresist.

[0039] In this embodiment, the reliability of the electronic device 1A can also be improved by designing that the bonding pad 102 does not overlap with the boundary of the protruding portion 101 . Please refer to the above description for details, which will not be repeated here.

[0040] It should be understood that although Figure 3 Only one electronic component 12 and one electronic substrate 10A are shown, but any number of electronic components 12 and any number of electronic substrates 10A can be provided on the circuit board 14 as required. In addition, the type of electronic component 12 can be changed as required and is not limited to light emitting diodes. In addition, the specific structure of the electronic substrate 10A can also be changed as required and is not limited to Figure 3 In the case where the electronic component 12 is a light emitting diode, the electronic device 1A may be, for example, a display device (eg, a non-self-luminous display device) or a spliced ​​display device, but is not limited thereto.

[0041] Figure 4 This is a partial top view of an electronic device according to the third embodiment of the present disclosure. Figure 4The electronic device 1B is, for example, a spliced ​​display device. For example, the electronic device 1B may be composed of four Figure 1 The electronic devices 1 shown are assembled, but the number of electronic devices 1 in the electronic device 1B can be changed according to needs. Figure 4 In the embodiment, each electronic device 1 includes, for example, an electronic substrate 10 (refer to Figure 1 ), the four electronic devices 1 include four electronic substrates 10, and the four electronic substrates 10 are spliced ​​together to form a spliced ​​display device. Figure 3 In the case where the electronic substrate 10A does not affect the display quality, for example, when the size of the electronic substrate 10A is much smaller than the size of the electronic device 1B, or when the size of the electronic substrate 10A is very small, the electronic device 1B may also be composed of multiple Figure 3 The electronic device 1A shown is assembled.

[0042] Figure 5 is a partial cross-sectional diagram of an electronic device according to the fourth embodiment of the present disclosure. Figure 5 , the electronic device 1C is, for example, a non-self-luminous display device. For example, the electronic device 1C may include Figure 1 The electronic device 1 and the display panel DP are shown. In the electronic device 1C, the electronic device 1 is used as a backlight module, for example. The electronic component 12 in the electronic device 1 is, for example, a light emitting diode, and the display panel DP is arranged on the transmission path of the light beam L from the light emitting diode. In other embodiments, the electronic device 1 in the electronic device 1C can also be replaced by Figure 3 electronic device 1A.

[0043] In summary, in the embodiments disclosed herein, the design of the bonding pad not overlapping the edge of the protrusion reduces the stress generated between the electronic component and the substrate or improves the flatness of the solder joint, thereby reducing the probability of substrate cracking or electronic component peeling, thereby helping to improve the reliability of the electronic device.

[0044] The above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

[0045] Although the embodiments and advantages of the present disclosure have been disclosed above, it should be understood that any person skilled in the art can make changes, substitutions and modifications without departing from the spirit and scope of the present disclosure, and the features between the embodiments can be arbitrarily mixed and replaced with each other to form other new embodiments. In addition, the scope of protection of the present disclosure is not limited to the processes, machines, manufacturing, material compositions, devices, methods and steps in the specific embodiments described in the specification. Any person skilled in the art can understand from the content of the present disclosure that the processes, machines, manufacturing, material compositions, devices, methods and steps currently or in the future developed can be used according to the present disclosure as long as they can implement substantially the same functions or obtain substantially the same results in the embodiments described herein. Therefore, the scope of protection of the present disclosure includes the above-mentioned processes, machines, manufacturing, material compositions, devices, methods and steps. In addition, each claim constitutes a separate embodiment, and the scope of protection of the present disclosure also includes the combination of each claim and embodiment. The scope of protection of the present disclosure shall be determined by the appended claims.

Claims

1. An electronic device, characterized in that: include: An electronic substrate, wherein the electronic substrate comprises: substrate; a first insulating layer, disposed on the substrate and having a protruding portion; a second insulating layer, disposed on the first insulating layer; a bonding pad disposed on the second insulating layer, wherein the bonding pad does not overlap with the first insulating layer, wherein the bonding pad comprises a first conductive layer and a second conductive layer, wherein the first conductive layer is disposed between the substrate and the second conductive layer; and a pad definition layer disposed on the second insulating layer, wherein a portion of the pad definition layer is disposed on the protruding portion of the first insulating layer, and another portion of the pad definition layer is disposed on a portion of the first conductive layer of the bonding pad; and The electronic component is electrically connected to the bonding pad of the electronic substrate.

2. The electronic device according to claim 1, wherein: A gap between the first conductive layer of the bonding pad and a boundary of the protrusion adjacent to the first conductive layer falls within a range of 5 μm to 100 μm.

3. The electronic device according to claim 1, wherein: The first insulating layer is formed of a planar layer, and the planar layer is an organic insulating layer.

4. The electronic device according to claim 1, wherein: Also includes: A conductive adhesive layer electrically connected between the electronic component and the bonding pad, Compared with the first conductive layer, the second conductive layer has a higher adhesive force with the conductive adhesive layer.

5. The electronic device according to claim 1, wherein: The electronic substrate further comprises: A driving element is provided on the substrate, the driving element includes a drain, wherein the second insulating layer is provided on the driving element, and the second insulating layer has a first opening, a third insulating layer disposed between the driving element and the first insulating layer, the third insulating layer having a second opening, the first opening being connected to the second opening and exposing a portion of the drain electrode; The first conductive layer of the bonding pad contacts the drain electrode through the first opening and the second opening.

6. The electronic device according to claim 1, wherein: The electronic device is a light-emitting device.

7. The electronic device according to claim 1, wherein: The electronic component is a light emitting diode.

8. The electronic device according to claim 7, wherein: Also includes: The display panel is arranged on the transmission path of the light beam from the light emitting diode.

9. The electronic device according to claim 1, wherein: The electronic device includes a plurality of electronic substrates, and the plurality of electronic substrates are spliced ​​together.

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