Image controller and semiconductor package

Abstract

The present disclosure relates to an image controller and a semiconductor package. The image controller includes a first semiconductor circuit configured to generate third compensation data obtained by applying a first image compensation to input image data, a second semiconductor circuit configured to generate first compensation data obtained by applying a second image compensation different from the first image compensation to the input image data, and a sensing unit configured to generate temperature sensing data by measuring a temperature of the second semiconductor circuit. The first semiconductor circuit determines whether to shut down an operation of the second semiconductor circuit based on the temperature sensing data.

Description

[0001] Cross Reference to Related Applications

[0002] This patent application claims priority to Korean Patent Application No. 10-2020-0093312, filed on July 27, 2020, in the Korean Intellectual Property Office (KIPO), the entire disclosure of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0003] The disclosure relates to a semiconductor package, and more particularly, to an image controller and a semiconductor package implementing the same. BACKGROUND

[0004] Display apparatuses having liquid crystal displays and organic light emitting displays are widely used for disseminating all types of visual media.

[0005] A display apparatus can include an image controller and a display panel. The image controller generates image data based on received input image data, and the display panel displays an image based on the image data. Meanwhile, the image controller can generate the image data by applying various image compensations to the input image data, such that the display quality of the display apparatus is optimized.

[0006] Many applications rely on high-performance display apparatuses, and thus, recently, there has been an increasing demand for the operating performance of a semiconductor package for implementing an image controller. SUMMARY

[0007] Embodiments of the present inventive concept provide an image controller and a semiconductor package for implementing the same, in which the operation of a semiconductor circuit is controlled based on the temperature of the semiconductor circuit, such that a malfunction caused by excessive heat generated by the semiconductor circuit can be minimized.

[0008] According to embodiments of the present inventive concept, an image controller can include a first semiconductor circuit configured to generate third compensation data by applying a first image compensation to input image data, a second semiconductor circuit configured to generate first compensation data by applying a second image compensation different from the first image compensation to the input image data, and a sensing unit configured to generate temperature sensing data by measuring the temperature of the second semiconductor circuit, wherein the first semiconductor circuit determines whether to shut down the operation of the second semiconductor circuit based on the temperature sensing data.

[0009] In an embodiment of the inventive concept, the first semiconductor circuit can generate image data based on the first compensation data and the third compensation data when the measured temperature of the second semiconductor circuit is lower than a predetermined temperature. The first semiconductor circuit can allow the operation of the second semiconductor circuit to be turned off, generate second compensation data by applying the second image compensation to the input image data, and generate the image data based on the second compensation data and the third compensation data when the measured temperature of the second semiconductor circuit is equal to or higher than the predetermined temperature.

[0010] In an embodiment of the inventive concept, the image controller can further include a memory unit configured to store a compensation parameter corresponding to the second image compensation.

[0011] In an embodiment of the inventive concept, the first semiconductor circuit can generate the second compensation data by applying the compensation parameter to the input image data.

[0012] In an embodiment of the inventive concept, the first semiconductor circuit can include a compensator configured to generate the third compensation data based on the input image data, a calculator configured to generate the second compensation data based on the input image data and the compensation parameter, and a data transfer controller configured to generate a first data transfer control signal for controlling the calculator and a second data transfer control signal for controlling the second semiconductor circuit based on the temperature sensing data.

[0013] In an embodiment of the inventive concept, the second semiconductor circuit is prevented from generating the first compensation data when the measured temperature of the second semiconductor circuit is equal to or higher than the predetermined temperature, and the calculator can generate the second compensation data based on the first data transfer control signal.

[0014] In an embodiment of the inventive concept, the compensator can generate the image data based on the second compensation data and the third compensation data.

[0015] In an embodiment of the inventive concept, the second semiconductor circuit can generate the first compensation data based on the second data transfer control signal and the calculator is prevented from generating the second compensation data based on the first data transfer control signal when the measured temperature of the second semiconductor circuit is lower than the predetermined temperature.

[0016] In an embodiment of the inventive concept, the compensator can generate the image data based on the first compensation data and the third compensation data.

[0017] In an embodiment of the inventive concept, the compensation parameter stored in the memory unit can be provided from the second semiconductor circuit.

[0018] In an embodiment of the inventive concept, the sensing unit can generate the temperature sensing data by further measuring temperatures of the first semiconductor circuit and the memory unit.

[0019] In an embodiment of the inventive concept, the first semiconductor circuit can determine whether to shut down the operation of the second semiconductor circuit based on the measured temperature of the first semiconductor circuit, the measured temperature of the second semiconductor circuit, and the measured temperature of the memory unit.

[0020] According to an embodiment of the inventive concept, a semiconductor package can include a first package including a first semiconductor circuit configured to generate third compensation data by applying a first image compensation to input image data, a second package including a second semiconductor circuit configured to generate first compensation data by applying a second image compensation different from the first image compensation to the input image data, the second package disposed above the first package, and at least one thermal sensor disposed in a predetermined sensing area on the second semiconductor circuit and configured to measure a temperature of the second semiconductor circuit, wherein the first semiconductor circuit determines whether to shut down an operation of the second semiconductor circuit based on the temperature of the second semiconductor circuit measured by the at least one thermal sensor.

[0021] In an embodiment of the inventive concept, when the temperature of the second semiconductor circuit measured by the at least one thermal sensor is lower than a predetermined temperature, the first semiconductor circuit can generate image data based on the first compensation data and the third compensation data. When the temperature of the second semiconductor circuit measured by the at least one thermal sensor is equal to or higher than the predetermined temperature, the first semiconductor circuit can allow the operation of the second semiconductor circuit to be shut down, generate second compensation data by applying the second image compensation to the input image data, and generate the image data based on the second compensation data and the third compensation data.

[0022] In an embodiment of the inventive concept, the semiconductor package can further include a third package including a memory configured to store a compensation parameter corresponding to the second image compensation, the third package disposed above the first package.

[0023] In an embodiment of the inventive concept, the first package can further include a first substrate supporting the first semiconductor circuit, the first substrate being electrically connected to the first semiconductor circuit; and the second package can further include a second substrate supporting the second semiconductor circuit, the second substrate being electrically connected to the second semiconductor circuit. The first substrate and the second substrate can be electrically connected to each other by at least one connection member.

[0024] In an embodiment of the inventive concept, the first package can further include a first substrate supporting the first semiconductor circuit, the first substrate being electrically connected to the first semiconductor circuit; and the third package can further include a third substrate supporting the memory, the third substrate being electrically connected to the memory. The first substrate and the third substrate can be electrically connected to each other by at least one connection member.

[0025] In an embodiment of the inventive concept, the at least one thermal sensor can be disposed between the second semiconductor circuit and the second substrate.

[0026] In an embodiment of the inventive concept, the semiconductor package can further include at least one heat dissipation member disposed on a top surface of at least one of the second package and the third package.

[0027] In an embodiment of the inventive concept, a semiconductor package can include a first package including a first semiconductor circuit configured to generate third compensation data by applying a first image compensation to input image data; a second package including a second semiconductor circuit configured to generate first compensation data by applying a second image compensation different from the first image compensation to the input image data, the second package being disposed above the first package; at least one thermal sensor configured to measure a temperature of the second semiconductor circuit; and a third package including a memory configured to store a compensation parameter corresponding to the second image compensation, the third package being disposed above the first package, wherein the third package includes a substrate supporting the memory, and the substrate is electrically connected to the memory. BRIEF DESCRIPTION OF DRAWINGS

[0028] Hereinafter, example embodiments will be described in detail with reference to the accompanying drawings. In the attached drawings, the size can be exaggerated for graphically clarity. It will be understood that when an element is referred to as being "between" two elements, it can be the only element between the two elements or one or more intervening elements can also be present between the two elements.

[0029] The above and other features of the inventive concept will become more apparent by describing in detail example embodiments thereof with reference to the attached drawings, in which:

[0030] Figure 1 is a block diagram illustrating a display device according to an embodiment of the disclosure.

[0031] Figure 2 is a diagram illustrating a semiconductor package according to an embodiment of the disclosure.

[0032] Figure 3A and Figure 3B is a diagram illustrating Figure 2 a thermal sensor included in the semiconductor package illustrated in

[0033] Figure 4 is a block diagram illustrating an image controller according to an embodiment of the disclosure.

[0034] Figure 5A and Figure 5B is a diagram illustrating Figure 4 an example of an operation of the image controller illustrated in

[0035] Figure 6 is a diagram illustrating the semiconductor package illustrated in Figure 2 in more detail.

[0036] Figure 7 is a diagram illustrating a semiconductor package according to an embodiment of the disclosure. DETAILED DESCRIPTION

[0037] Throughout the specification, like drawing reference numerals can designate like elements. In the drawings, the thickness of lines, layers, components or films or regions can be exaggerated for clarity.

[0038] The term "and / or" includes any and all combinations of one or more of the associated listed items.

[0039] It will be understood that, although the terms such as "first" and "second" are used herein to describe various elements, the elements should not be limited by these terms. These terms are only used to distinguish one component from another. For example, a first element referred to as a first element in one embodiment can be referred to as a second element in another embodiment without departing from the scope of the appended claims. Singular forms "a," "an" and "the" are intended to include plural forms unless the context clearly indicates otherwise.

[0040] It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0041] Also, the use of "below", "beneath", "above", "on", and "on top of", and the like, are used in relation to the illustration as shown in the drawings. The terms are intended to be relative concepts and are described based on the directions as shown in the drawings.

[0042] Here, it will be understood that when an element or layer is referred to as being "on" or "connected to" or "coupled to" another element or layer, it can be directly on, directly connected to, or directly coupled to the other element or layer, or one or more intervening elements can be present.

[0043] Hereinafter, example embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0044] Figure 1 is a block diagram illustrating a display apparatus according to an embodiment of the present disclosure. Referring to Figure 1 , the display apparatus DD can include a display panel DP, an image controller IC, a scan driver SDV (or a scan driving circuit), and a data driver DDV (or a data driving circuit).

[0045] The display panel DP can include pixels PX. Each of the pixels PX can be connected to a corresponding data line D1 to Dm and a corresponding scan line S1 to Sn. Meanwhile, a voltage of a first power supply and a second power supply can be supplied to each of the pixels PX from the outside. The first power supply and the second power supply are voltages required for the pixels PX to operate. For example, the first power supply can have a voltage level higher than that of the second power supply.

[0046] Each of the pixels PX can include a driving transistor and at least one switching transistor. Each of the pixels PX can emit light having a luminance corresponding to a data signal supplied through a corresponding data line in response to a scan signal supplied through a corresponding scan line.

[0047] The image controller IC can receive input image data IDATA and a control signal from the outside. The control signal can include a vertical synchronization signal, a horizontal synchronization signal, a clock signal, and a data enable signal, etc.

[0048] The image controller IC can generate a scan control signal SCS and a data control signal DCS corresponding to the control signal. The scan control signal SCS can be supplied to the scan driver SDV, and the data control signal DCS can be supplied to the data driver DDV.

[0049] The image controller IC can generate image data DATA by converting the input image data IDATA. For example, the image controller IC can generate the image data by rearranging the input image data IDATA. The image data DATA can be supplied to the data driver DDV.

[0050] The scan driver SDV can supply a scan signal to the pixels PX through the scan lines S1 to Sn in response to a scan control signal SCS. Here, n can be an integer greater than 0.

[0051] The data driver DDV can convert image data in a digital form into a data signal in an analog form in response to a data control signal DCS, and then supply the data signal to the pixels PX through the data lines D1 to Dm. Here, m can be an integer greater than 0.

[0052] According to an embodiment, the display apparatus DD can correct the input image data IDATA by using the image controller IC to perform optical compensation, residual image compensation, external compensation, etc., and generate the image data DATA based on the corrected input image data IDATA. For example, the image controller IC can include a physical compensation block (e.g., a compensator, etc.) including compensation IP, etc.

[0053] According to an embodiment, in order to minimize the area of a semiconductor package for implementing the image controller IC, the image controller IC can have a structure in which semiconductor packages for performing different image compensations are vertically stacked.

[0054] However, as the resolution increases and the display apparatus DD displays an image at a high image refresh rate, a driving frequency, or a screen refresh rate, the compensation parameters and / or the amount of transmission or the transmission speed between or in the semiconductor circuits included in the semiconductor package for image compensation in the image controller IC increase. Accordingly, a malfunction can occur due to excessive heat generated in the semiconductor circuits in the image controller IC.

[0055] According to some embodiments of the disclosure, the image controller IC (or the display apparatus DD) can sense or measure the temperature of the semiconductor circuits, allow the operation of the corresponding semiconductor circuits to be turned off when the sensed temperature is equal to or higher than a predetermined temperature, and compensate for the input image data IDATA by using a memory for temporarily storing compensation parameters, so that a malfunction caused by excessive heat generated in the semiconductor circuits in the image controller IC can be minimized.

[0056] Figure 2 FIG. 1 is a diagram illustrating a semiconductor package according to an embodiment of the disclosure. Figure 3A and Figure 3B is a diagram illustrating Figure 2 the thermal sensor included in the semiconductor package illustrated in FIG. 1. In some embodiments, the image controller IC can perform the compensation for the input image data IDATA by using the thermal sensor included in the semiconductor package 1000 illustrated in FIG. 1. Figure 2 the semiconductor package 1000 illustrated in FIG. 1.

[0057] Referring to Figure 1 and Figure 2The semiconductor package 1000 can include a first package 100 including the first semiconductor circuit 120 and a second package 200 including the second semiconductor circuit 220. The semiconductor package 1000 can have a package-on-package (PoP) structure as a structure in which the second package 200 is formed above the first package 100. As described above, according to the PoP structure, an area of the semiconductor package 1000 can be minimized.

[0058] In an embodiment of the inventive concept, the semiconductor package 1000 can further include a third package 300 formed above the first package 100 and including a memory 320. The third package 300 can be formed at one side of the second package 200. In one example, Figure 2 As shown in FIG. 2, two third packages 300 are formed above the first package 100, which is merely an example and embodiments of the inventive concept are not limited thereto, and one or three or more third packages 300 can be formed above the first package 100.

[0059] The first package 100 can include a first substrate 110 and a first semiconductor circuit 120 which can be formed on the first substrate 110. The first semiconductor circuit 120 can be implemented by a logic chip. For example, the first semiconductor circuit 120 can be implemented as a system semiconductor having an application specific integrated circuit (ASIC) or an application specific standard product (ASSP), etc.

[0060] The first substrate 110 can be electrically connected to an external board such as a main board through an external connection member 130.

[0061] The second package 200 can include a second substrate 210 formed above the first package 100 and a second semiconductor circuit 220 formed on the second substrate 210. The second semiconductor circuit 220 can be implemented by a logic chip.

[0062] The second substrate 210 can be electrically connected to the first substrate 110 through a first connection member 230.

[0063] The third package 300 can include a third substrate 310 formed above the first package 100 and a memory 320 formed on the third substrate 310. For example, the memory 320 can be a memory chip such as a dynamic random access memory (DRAM). Also, the memory 320 can be a double data rate synchronous dynamic random access memory (DDR SDRAM) chip (or a DDR chip).

[0064] The third substrate 310 can be electrically connected to the first substrate 110 through a second connection member 330.

[0065] According to embodiments of the inventive concept, asFigure 2 The memory 320 can be formed on the third substrate 310 as shown in the middle. However, this is merely an example embodiment and embodiments of the inventive concept are not limited thereto. For example, the arrangement of the memory 320 can vary. The memory 320 can be formed on the first substrate 110 or can be formed on the second substrate 210.

[0066] In some embodiments, the semiconductor package 1000 can sense or measure the temperature of the second semiconductor circuit 220 by using the thermal sensor.

[0067] A detailed description will be given of the semiconductor package 1000 with reference to the accompanying drawings. Figure 3A The thermal sensors included in the semiconductor package 1000 will be described in more detail. The semiconductor package 1000 can include a sensing unit 10 including thermal sensors 11, 12, 13, and 14.

[0068] A plurality of thermal sensors 11, 12, 13, and 14 can be provided between the second substrate 210 and the second semiconductor circuit 220 to sense or measure the temperature of the second semiconductor circuit 220. In addition, the thermal sensors 11, 12, 13, and 14 can be respectively provided in predetermined sensing regions between the second substrate 210 and the second semiconductor circuit 220. Accordingly, the thermal sensors 11, 12, 13, and 14 can be provided on the top of the second substrate 210 to sense or measure the temperature due to heat generation of each sensing region.

[0069] However, the arrangement of the thermal sensors 11, 12, 13, and 14 is not limited thereto. For example, the thermal sensors 11, 12, 13, and 14 can be directly provided on the top of the second semiconductor circuit 220.

[0070] In addition, the number of the thermal sensors 11, 12, 13, and 14 is not limited to four thermal sensors. For example, the sensing unit 10 can include one, two, three, or five or more thermal sensors according to the sensing regions provided in the second semiconductor circuit 220.

[0071] Due to the increase in resolution and the increase in image refresh rate, heat generation between the first package 100 and the second package 200 can increase and become challenging in the example structure of the semiconductor package 1000. For example, heat generation between the first package 100 and the second semiconductor circuit 220 of the second package 200 can increase and become challenging.

[0072] According to embodiments of the inventive concept, when the temperature of the second semiconductor circuit 220 is equal to or higher than the predetermined temperature, the semiconductor package 1000 (or the image controller IC) can allow the operation of the second semiconductor circuit 220 to be turned off (e.g., switched to an off position), and the semiconductor package 1000 can perform a compensation operation in the first semiconductor circuit 120 by using the compensation parameter stored in the memory 320.

[0073] In some embodiments of the inventive concept, the semiconductor package 1000 can sense or measure the temperature of the first semiconductor circuit 120 and / or the memory 320 in addition to the second semiconductor circuit 220. This will be described in more detail with reference to Figure 3B .

[0074] Referring to Figure 3B , the semiconductor package 1000' can sense or measure the temperature of the first semiconductor circuit 120 and / or the memory 320 using thermal sensors. The semiconductor package 1000' can include a sensing unit 10'. The sensing unit 10' can include a set of thermal sensors including thermal sensors 11', 12', 13', 14', 15, and 16. In some embodiments, the image controller IC can be implemented through the semiconductor package 1000'.

[0075] According to embodiments of the inventive concept, as Figure 3B shown in FIG. 1, one or more thermal sensors of the sensing unit 10 (e.g., thermal sensors 11, 12, 13, and 14) can be disposed between the first substrate 110 and the first semiconductor circuit 120 for each sensing region of the first semiconductor circuit 120, or one or more thermal sensors can be directly disposed on the first semiconductor circuit 120 to sense or measure the temperature of the first semiconductor circuit 120. Also, one or more thermal sensors of the sensing unit 10 (e.g., thermal sensors 15 and 16) can be disposed between the third substrate 310 and the memory 320 for each sensing region of the memory 320 or directly disposed on the memory 320 to sense or measure the temperature of the memory 320.

[0076] According to some embodiments of the inventive concept, in addition to the temperature of the second semiconductor circuit 220, the semiconductor package 1000' (or the image controller IC) can determine whether to turn off the operation of the second semiconductor circuit 220 by also considering the temperatures of the first semiconductor circuit 120 and the memory 320.

[0077] Figure 4 is a block diagram illustrating an image controller according to an embodiment of the disclosure. Figure 5A and Figure 5B are graphs illustrating examples of the operation of the image controller shown in Figure 4 .

[0078] Referring to Figure 2 , Figure 3A and Figure 4 , the image controller IC can include a first semiconductor circuit 121, a second semiconductor circuit 221, and a memory unit 321. In some embodiments, Figure 4 The image controller IC shown in Figure 2 can be implemented by the semiconductor package 1000 shown in . For example, the first semiconductor circuit 121 can be implemented by the first package 100 (or the first semiconductor circuit 120), the second semiconductor circuit 221 can be implemented by the second package 200 (or the second semiconductor circuit 220), and the memory unit 321 can be implemented by the third package 300 (or the memory 320).

[0079] The image controller IC can receive input image data IDATA, correct the input image data IDATA by performing image compensation including optical compensation, residual image compensation, external compensation, etc., and generate image data DATA based on the corrected input image data IDATA. Embodiments of the inventive concept are not limited to the above-described image compensation. For example, the image controller IC can perform another different image compensation.

[0080] Image compensation can be performed in the first semiconductor circuit 121 and the second semiconductor circuit 221, and the first semiconductor circuit 121 and the second semiconductor circuit 221 can perform different image compensation. According to embodiments of the inventive concept, image compensation other than image compensation performed by the first semiconductor circuit 121 (hereinafter, referred to as first image compensation) (hereinafter, referred to as second image compensation) can be performed in the second semiconductor circuit 221. For example, the second semiconductor circuit 221 can perform second image compensation including optical compensation, external compensation, etc., and the first semiconductor circuit 121 can perform first image compensation that is not performed by the second semiconductor circuit 221 among image compensation performed by the image controller IC.

[0081] According to embodiments of the inventive concept, the second image compensation can be relatively simple image compensation using a calculation method that adds or subtracts a compensation parameter CP with respect to the input image data IDATA. For example, the input image data IDATA can be different from the corrected input image data IDATA.

[0082] The second semiconductor circuit 221 can generate compensation data (or first compensation data CDATA1) by performing the second image compensation on the received input image data IDATA, and provide the compensation data (i.e., the first compensation data CDATA1) to the first semiconductor circuit 121. The first semiconductor circuit 121 can generate the image data DATA based on the third compensation data and the first compensation data CDATA1 provided from the second semiconductor circuit 221, by performing the first image compensation on the received input image data IDATA and generating the compensation data (or the third compensation data).

[0083] According to embodiments of the present inventive concept, additional image compensation can be performed in the second semiconductor circuit 221 according to design variations of the image controller IC or the like.

[0084] In embodiments of the present inventive concept, the image controller IC can receive the temperature sensing data TSD from the sensing unit 10, and based on the temperature sensing data TSD, allow the operation of the second semiconductor circuit 221 to be turned off when the sensed temperature of the second semiconductor circuit 221 is equal to or higher than a predetermined temperature. The predetermined temperature can be determined based on experiments and pre-set in the image controller IC before the semiconductor package 1000 (or the semiconductor package 1000', 1000") is released. Compensation parameters CP corresponding to the second image compensation performed in the second semiconductor circuit 221 can be stored in the memory unit 321. The image controller IC can generate compensation data (or second compensation data CDATA2) by performing the second image compensation in the first semiconductor circuit 121 using the compensation parameters CP provided from the memory unit 321. The compensation parameters CP can be provided from the second semiconductor circuit 221 to the memory unit 321 to be stored in the memory unit 321. The first semiconductor circuit 121 can generate the third compensation data by performing the first image compensation on the received input image data IDATA, and generate the image data DATA based on the third compensation data and the second compensation data CDATA2.

[0085] According to embodiments of the present inventive concept, since the second image compensation includes a calculation operation of adding or subtracting the compensation parameters CP to the input image data IDATA, the second image compensation can be performed in the first semiconductor circuit 121 in a relatively simple manner.

[0086] The operation of the image controller IC will be described in detail with reference to Figure 3A , Figure 4 , Figure 5A and Figure 5B As shown in Figure 5A , the sensed temperature of the second semiconductor circuit 221 can be lower than the predetermined temperature. As shown in Figure 5B , the sensed temperature of the second semiconductor circuit 221 can be equal to or higher than the predetermined temperature.

[0087] The memory unit 321 can receive the compensation parameter CP from the second semiconductor circuit 221 and store the compensation parameter CP. The compensation parameter CP corresponds to a parameter used for calculation of the second image compensation of the second semiconductor circuit 221.

[0088] The first semiconductor circuit 121 can include a compensator 1211, a calculator 1212, and a data transfer controller 1213.

[0089] The data transfer controller 1213 can receive the temperature sensing data TSD from the sensing unit 10. The temperature sensing data TSD can include temperature sensing data of the second semiconductor circuit 221.

[0090] In an embodiment, the data transfer controller 1213 can generate a first data transfer control signal DPCS1 and a second data transfer control signal DPCS2, provide the first data transfer control signal DPCS1 to the calculator 1212 and the second data transfer control signal DPCS2 to the second semiconductor circuit 221 based on the temperature sensing data TSD.

[0091] The operations of the second semiconductor circuit 221 and the calculator 1212 in the first semiconductor circuit 121 can be controlled based on the first data transfer control signal DPCS1 and the second data transfer control signal DPCS2. For example, the operation of the calculator 1212 can be turned on or off based on the first data transfer control signal DPCS1, and the operation of the second semiconductor circuit 221 can be turned on or off based on the second data transfer control signal DPCS2.

[0092] According to some embodiments of the inventive concept, as shown in Figure 5A When the sensed temperature of the second semiconductor circuit 221 is less than the predetermined temperature, the data transfer controller 1213 can provide the first data transfer control signal DPCS1_1 to the calculator 1212 based on the temperature sensing data TSD_1 for allowing the operation of the calculator 1212 to be turned off (e.g., the calculator 1212 does not generate the second compensation data), and provide the second data transfer control signal DPCS2_1 to the second semiconductor circuit 221 to allow the operation of the second semiconductor circuit 221 to be turned on, as shown in

[0093] The second semiconductor circuit 221 can generate the first compensation data CDATA1 by performing the second image compensation on the input image data IDATA. The first compensation data CDATA1 can be provided to the first semiconductor circuit 121 (or the compensator 1211). According to embodiments of the inventive concept, as shown in Figure 5AAs shown in FIG. 12B, when the sensed temperature of the second semiconductor circuit 221 is lower than the predetermined temperature, the second semiconductor circuit 221 can generate the first compensation data CDATA1 based on the second data transfer control signal DPCS2_1, and the calculator 1212 does not generate the second compensation data (i.e., the second compensation data CDATA2 will be described in more detail below) based on the first data transfer control signal DPCS1_1. Figure 5B

[0094] The compensator 1211 can generate compensation data (or third compensation data) by performing the first image compensation on the input image data IDATA, and generate and output the image data DATA based on the third compensation data and the first compensation data CDATA1 obtained by performing the second image compensation.

[0095] According to some embodiments of the present inventive concepts, as Figure 5B As shown in FIG. 12B, when the sensed temperature of the second semiconductor circuit 221 is lower than the predetermined temperature, the second semiconductor circuit 221 can generate the first compensation data CDATA1 based on the second data transfer control signal DPCS2_1, and the calculator 1212 does not generate the second compensation data (i.e., the second compensation data CDATA2 will be described in more detail below) based on the first data transfer control signal DPCS1_1.

[0096] The calculator 1212 can receive the compensation parameters CP corresponding to the second image compensation from the memory unit 321, and generate the second compensation data CDATA2 by performing the second image compensation on the input image data IDATA. The second compensation data CDATA2 can be provided to the compensator 1211. According to embodiments of the present inventive concepts, when the sensed temperature of the second semiconductor circuit 221 is equal to or higher than the predetermined temperature, the second semiconductor circuit 221 does not generate the first compensation data CDATA1 based on the second data transfer control signal DPCS2_2. The calculator 1212 can generate the second compensation data CDATA2 based on the first data transfer control signal DPCS1_2. Meanwhile, since both the first compensation data CDATA1 and the second compensation data CDATA2 correspond to compensation data obtained by performing the second image compensation on the input image data IDATA, the first compensation data CDATA1 and the second compensation data CDATA2 can substantially correspond to the same compensation data.

[0097] The compensator 1211 can generate third compensation data by performing the first image compensation on the input image data IDATA, and generate and output the image data DATA based on the third compensation data and the second compensation data CDATA2 obtained by performing the second image compensation.

[0098] As described above with reference to FIGS. 12A and 12B, the first compensation data CDATA1 and the second compensation data CDATA2 can be generated based on the first data transfer control signal DPCS1_1 and the second data transfer control signal DPCS2_1, respectively, when the sensed temperature of the second semiconductor circuit 221 is lower than the predetermined temperature. Figure 2 ​、 Figure 3A 、 Figure 4 、 Figure 5A and Figure 5B As described above, the image controller IC according to some embodiments of the inventive concept can control the operation of the second semiconductor circuit 221 based on the sensed temperature of the second semiconductor circuit 221. For example, when the sensed temperature of the second semiconductor circuit 221 is equal to or higher than a predetermined temperature, the image controller IC can allow the operation of the second semiconductor circuit 221 to be turned off, and perform the second image compensation of the second semiconductor circuit 221 in the calculator 1212 in the first semiconductor circuit 121. Accordingly, the resolution is increased and the image refresh rate is increased, so that the amount or speed of transmission of the compensation data from the second semiconductor circuit 221 is increased. Thus, a malfunction caused by excessive heat generated in the second semiconductor circuit 221 can be minimized.

[0099] According to some embodiments, as shown in Figure 2 、 Figure 3A 、 Figure 4 、 Figure 5A and Figure 5B The image controller IC controls the operation of the second semiconductor circuit 221 by sensing only the temperature of the second semiconductor circuit 221. However, embodiments of the disclosure are not limited thereto. For example, as described in Figure 3B In addition to the second semiconductor circuit 220 corresponding to the second semiconductor circuit 221, the sensing unit 10' can sense or measure the temperatures of the first semiconductor circuit 120 and the memory 320 corresponding to the first semiconductor circuit 121 and the memory unit 321, respectively. Accordingly, the image controller IC controls the operations of the first semiconductor circuit 121 (or the calculator 1212) and the second semiconductor circuit 221 by taking into account all the temperatures of the first semiconductor circuit 121, the second semiconductor circuit 221, and the memory unit 321, so that a malfunction caused by heat can be more effectively reduced. In one embodiment of the inventive concept, the first semiconductor circuit 121 can determine whether the operation of the second semiconductor circuit 221 is turned off based on the sensed temperature of the first semiconductor circuit 121, the sensed temperature of the second semiconductor circuit 221, and the sensed temperature of the memory unit 321.

[0100] Figure 6 is a diagram more specifically describing the semiconductor package shown in Figure 2 .

[0101] Referring to Figure 4 and Figure 6 , the semiconductor package 1000 can include a first package 100, a second package 200, and a third package 300. Also, the semiconductor package 1000 can include connection members 130, 230, and 330. As shown in Figure 6As illustrated in FIG. 1, the semiconductor package 1000 can have a POP structure in which the second package 200 is stacked above the first package 100.

[0102] The first package 100 can include a first substrate 110, a first semiconductor circuit 120 formed on the first substrate 110, an adhesive 140, and a sealing agent 150. A pad can be formed at a bottom surface and a top surface of the first substrate 110. For example, a lower pad 130-1 can be formed at the bottom surface of the first substrate 110, and a first upper pad 230-1 and a second upper pad 330-1 can be formed at the top surface of the first substrate 110. The first substrate 110 can be formed of silicon, glass, ceramic, or plastic, etc. However, this is merely illustrative, and the material of the first substrate 110 is not limited thereto.

[0103] The first substrate 110 can be formed based on an active wafer or an interposer substrate. The active wafer can be a wafer such as a silicon wafer on which a semiconductor circuit can be formed. Also, the first substrate 110 can include a multi-layer structure in which a line pattern is formed. The first upper pad 230-1 and the second upper pad 330-1 can be electrically connected to the lower pad 130-1 through the line pattern. Meanwhile, an external connection member 130 for allowing the semiconductor package 1000 to be mounted on an external board such as a main board can be formed on the lower pad 130-1 at the bottom surface of the first substrate 110. The first package 100 (or the first semiconductor circuit 121) can receive input image data IDATA and output image data DATA through the lower pad 130-1 and the external connection member 130.

[0104] The first semiconductor circuit 120 can be attached and fixed to the first substrate 110 through the adhesive 140. The adhesive 140 can be, for example, a non-conductive film (NCF), a UV film, a quick-drying adhesive, a thermosetting adhesive, a laser-cured adhesive, an ultrasonic-cured adhesive, a non-conductive paste (NCP), etc.

[0105] Further, a chip pad can be formed in the first semiconductor circuit 120 and the first substrate 110, respectively, and a wiring connecting the chip pads can be formed. The first semiconductor circuit 120 and the first substrate 110 are electrically connected through the chip pads and the wiring, so that necessary signals (e.g., input image data IDATA and image data DATA, etc.) can be transmitted between the first semiconductor circuit 120 and the first substrate 110.

[0106] The sealing agent 150 can seal the first semiconductor circuit 120 and the wiring electrically connecting the first semiconductor circuit 120 and the first substrate 110. The sealing agent 150 can be formed of a polymer such as a resin. For example, the sealing agent 150 can be formed of an epoxy molding compound (EMC).

[0107] The second package 200 can include a second substrate 210, a second semiconductor circuit 220 formed on the second substrate 210, an adhesive 240, and a sealing agent 250. A pad can be formed at a bottom surface of the second substrate 210. For example, a first connection pad 230-2 can be formed at the bottom surface of the second substrate 210. The first connection member 230 for electrically connecting the first package 100 and the second package 200 can be formed on the first connection pad 230-2 of the bottom surface of the second substrate 210.

[0108] The first connection member 230 can allow the first upper pad 230-1 of the first substrate 110 and the first connection pad 230-2 of the second substrate 210 to be physically and electrically connected to each other, and the first connection member 230 can be configured to structurally fix the first package 100 and the second package 200 in a firm manner. For example, the first substrate 110 can be spaced apart from the second substrate 210, but the first substrate 110 can be connected to the second substrate 210 through the first upper pad 230-1, the first connection member 230, and the first connection pad 230-2. The material of the first connection member 230 can include, for example, solder balls. However, the material of the first connection member 230 is not limited to solder. For example, the first connection member 230 can include at least one of tin (Sn), silver (Ag), copper (Cu), and aluminum (Al), or an alloy thereof, in addition to solder. Also, the structure of the first connection member 230 is not limited to a spherical shape as shown in the drawings. For example, the first connection member 230 can be variously modified, such as a cylindrical shape, a polygonal column shape, and a polyhedral shape. According to an embodiment of the inventive concept, the first connection member 230 or the material of the first connection member 230 can include one or more solder balls (for example, three solder balls, etc.). For example, the first connection member 230 can be formed in a structure in which a lower solder ball and an upper solder ball are coupled to each other therein.

[0109] The first package 100 and the second package 200 can transmit a signal (for example, input image data IDATA and image data DATA, etc.) between the first package 100 and the second package 200 through the pads 230-1 and 230-2 and the first connection member 230.

[0110] Similar to the first substrate 110, the second substrate 210 can be formed of silicon, glass, ceramic, or plastic, etc. However, this is merely illustrative, and the material of the second substrate 210 is not limited thereto.

[0111] Similar to the first substrate 110, the second substrate 210 can also include a multi-layer structure in which a line pattern is formed in the multi-layer structure.

[0112] The second semiconductor circuit 220 can be attached and fixed to the second substrate 210 by an adhesive 240. The adhesive 240 can be, for example, an NCF, a UV film, a quick-drying adhesive, a thermosetting adhesive, a laser-cured adhesive, an ultrasonic-cured adhesive, an NCP, or the like.

[0113] Further, a chip pad can be formed in the second semiconductor circuit 220 and the second substrate 210, respectively, and a wiring connecting the chip pads can be formed. The second semiconductor circuit 220 and the second substrate 210 are electrically connected through the chip pads and the wiring, so that signals (e.g., input image data IDATA and image data DATA, etc.) can be transmitted between the second semiconductor circuit 220 and the second substrate 210.

[0114] The encapsulant 250 can encapsulate the second semiconductor circuit 220 and the wiring electrically connecting the second semiconductor circuit 220 and the second substrate 210. The encapsulant 250 can be formed of a polymer such as a resin. For example, the encapsulant 250 can be formed of an epoxy molding compound (EMC).

[0115] The third package 300 can include a third substrate 310, a memory 320 formed on the third substrate 310, an adhesive 340, and an encapsulant 350. For example, a second connection pad 330-2 can be formed at a bottom surface of the third substrate 310. The second connection member 330 can be configured to electrically connect the first package 100 and the third package 300, and the second connection member 330 can be formed on the second connection pad 330-2 disposed at the bottom surface of the third substrate 310.

[0116] The second connection member 330 can allow the second upper pad 330-1 of the first substrate 110 and the second connection pad 330-2 of the third substrate 310 to be physically and electrically connected to each other. The second connection member 330 is configured to structurally fix the first package 100 and the third package 300 in a firm manner. In this way, the first package 100 and the third package 300 can be firmly connected or attached to each other by the second connection member 330. The second connection member 330 can include, for example, at least one solder ball. However, the material of the second connection member 330 is not limited to solder (e.g., a metal alloy). For example, the second connection member 330 can include at least one of tin (Sn), silver (Ag), (Cu), and aluminum (Al) or an alloy thereof in addition to solder. Also, the structure of the second connection member 330 is not limited to as described above. For example, the second connection member 330 can include a conductive adhesive, a conductive paste, a conductive film, a conductive wire, or the like. Figure 6The second connection members 330 can have various modifications so that they can have a spherical shape, a cylindrical shape, a polygonal column shape, and a polyhedral shape, as shown in FIG. 1. For example, the second connection members 330 can be formed of one or more solder balls or can include one or more solder balls. For example, the second connection members 330 can be formed in a structure in which a lower solder ball and an upper solder ball are coupled to each other therein.

[0117] The first package 100 and the third package 300 can transmit a signal (e.g., a compensation parameter CP, etc.) between the first package 100 and the third package 300 through the pads 330-1 and 330-2 and the second connection members 330.

[0118] Similar to the first substrate 110, the third substrate 310 can be formed of silicon, glass, ceramic, or plastic, etc. However, this is merely illustrative, and the material of the third substrate 310 is not limited thereto.

[0119] Similar to the first substrate 110, the third substrate 310 can include a multi-layer structure in which a line pattern is formed therein.

[0120] The memory 320 can be attached and fixed to the third substrate 310 through an adhesive 340. The adhesive 340 can be, for example, an NCF, a UV film, a quick-drying adhesive, a thermosetting adhesive, a laser-cured adhesive, an ultrasonic-cured adhesive, an NCP, etc.

[0121] In addition, chip pads can be formed in the memory 320 and the third substrate 310, respectively, and a wiring connecting the chip pads can be formed. The memory 320 and the third substrate 310 are electrically connected through the chip pads and the wiring, so that a signal (e.g., a compensation parameter CP, etc.) can be transmitted between the memory 320 and the third substrate 310.

[0122] The encapsulant 350 can encapsulate the memory 320 and a wiring electrically connecting the memory 320 and the third substrate 310. The encapsulant 350 can be formed of a polymer such as a resin. For example, the encapsulant 350 can be formed of an epoxy molding compound (EMC).

[0123] In Figure 6 In the above-described embodiment, the first package 100 and the second package 200 each include one semiconductor circuit 120 and 220, which is merely an example, and at least one of the first package 100 and the second package 200 can include a plurality of semiconductor circuits.

[0124] Furthermore, communication between packages 100, 200, and 300 can be performed via connecting members 130, 230, and 330. This communication can also be implemented as optical communication or communication using magnetic coupling. Communication using magnetic coupling is a form of data communication that utilizes magnetic force without relying on any physical connection means, while optical communication is a form of communication that uses optical fibers, photodiodes, and laser diodes.

[0125] Figure 7 This is a diagram illustrating a semiconductor package according to an embodiment of the present disclosure.

[0126] refer to Figure 6 and Figure 7 , Figure 7 The semiconductor package 1000 shown is substantially similar to Figure 6 The semiconductor package 1000 is shown in the figure. According to embodiments of the present invention, the semiconductor package 1000 further includes heat dissipation members 260 and 360. However, repeated descriptions of identical elements will be omitted. With regard to the omission of an element's description, it can be assumed that the description is at least similar to the description of the corresponding element already described elsewhere in this specification.

[0127] Reference Figure 3A , Figure 3B , Figure 4 and Figure 7 The semiconductor package 1000 may include a first package 100, a second package 200, and a third package 300. Furthermore, the semiconductor package 1000 may also include heat dissipation components 260 and 360. Heat dissipation components 260 and 360 may be formed and disposed on the top surface of at least one of the second package 200 and the third package 300. Heat dissipation components 260 and 360 may be configured with heat sinks to dissipate heat generated in the second package 200 and / or the third package 300 to the outside (e.g., the external environment).

[0128] The semiconductor package 1000 receives temperature sensing data TSD from the sensing unit 10 or 10', and when the sensing temperature of the second package 200 and / or the third package 300 is equal to or higher than a predetermined temperature, the heat dissipation rate of the heat dissipation components 260 and 360 is increased, thereby improving heat dissipation performance. Therefore, malfunctions caused by heat (e.g., excessive heat generated in the semiconductor circuitry of the image controller IC) can be minimized more effectively.

[0129] In an image controller and a semiconductor package implementing the image controller, when a temperature of a semiconductor circuit is sensed or measured and the measured temperature is equal to or higher than a predetermined temperature, the operation of the corresponding semiconductor circuit is turned off, and input image data is compensated by using a memory for temporarily storing a compensation parameter, and thus, a malfunction caused by excessive heat generated by the corresponding semiconductor circuit can be minimized.

[0130] While the inventive concept has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details can be made therein without departing from the spirit and scope of the inventive concept.

Claims

1. An image controller, wherein, The image controller includes: A first semiconductor circuit is configured to generate third compensation data by applying a first image compensation to input image data; A second semiconductor circuit is configured to generate first compensation data by applying a second image compensation, different from the first image compensation, to the input image data; and The sensing unit is configured to generate temperature sensing data by measuring the temperature of the second semiconductor circuit. The first semiconductor circuit determines whether to shut down the second semiconductor circuit based on the temperature sensing data. Wherein, the first semiconductor circuit: When the measured temperature of the second semiconductor circuit is equal to or higher than a predetermined temperature, the operation of the second semiconductor circuit is allowed to be turned off, second compensation data is generated by applying the second image compensation to the input image data, and image data is generated based on the second compensation data and the third compensation data.

2. The image controller according to claim 1, wherein, The first semiconductor circuit: When the measured temperature of the second semiconductor circuit is lower than the predetermined temperature, the image data is generated based on the first compensation data and the third compensation data.

3. The image controller according to claim 2, wherein, The image controller further includes a memory unit configured to store compensation parameters corresponding to the second image compensation. The first semiconductor circuit generates the second compensation data by applying the compensation parameters to the input image data. The compensation parameters stored in the memory cell are provided from the second semiconductor circuit, and The sensing unit generates the temperature sensing data by further measuring the temperature of the first semiconductor circuit and the memory unit.

4. The image controller according to claim 3, wherein, The first semiconductor circuit includes: The compensator is configured to generate the third compensation data based on the input image data; A calculator configured to generate the second compensation data based on the input image data and the compensation parameters; and A data transmission controller is configured to generate a first data transmission control signal for controlling the calculator and a second data transmission control signal for controlling the second semiconductor circuit based on the temperature sensing data.

5. The image controller according to claim 4, wherein, When the measured temperature of the second semiconductor circuit is equal to or higher than the predetermined temperature, the second semiconductor circuit is prevented from generating the first compensation data, and the calculator generates the second compensation data based on the first data transmission control signal. The compensator generates the image data based on the second compensation data and the third compensation data.

6. The image controller according to claim 4, wherein, When the measured temperature of the second semiconductor circuit is lower than the predetermined temperature, the second semiconductor circuit generates the first compensation data based on the second data transmission control signal, and prevents the calculator from generating the second compensation data based on the first data transmission control signal.

7. The image controller according to claim 6, wherein, The compensator generates the image data based on the first compensation data and the third compensation data.

8. The image controller according to claim 3, wherein, The first semiconductor circuit determines whether to shut down the operation of the second semiconductor circuit based on the measured temperature of the first semiconductor circuit, the measured temperature of the second semiconductor circuit, and the measured temperature of the memory cell.

9. A semiconductor package, wherein, The semiconductor package includes: A first package includes a first semiconductor circuit and is configured to generate third compensation data by applying a first image compensation to input image data. A second package, including a second semiconductor circuit, is configured to generate first compensation data by applying a second image compensation, different from the first image compensation, to the input image data; the second package is disposed above the first package. At least one thermal sensor is disposed in a predetermined sensing region on the second semiconductor circuit and configured to measure the temperature of the second semiconductor circuit. The first semiconductor circuit determines whether to shut down the second semiconductor circuit based on the temperature of the second semiconductor circuit measured by the at least one thermal sensor. Wherein, the first semiconductor circuit: When the temperature of the second semiconductor circuit, as measured by the at least one thermal sensor, is equal to or higher than a predetermined temperature, the operation of the second semiconductor circuit is allowed to be turned off, second compensation data is generated by applying the second image compensation to the input image data, and image data is generated based on the second compensation data and the third compensation data.

10. A semiconductor package, wherein, The semiconductor package includes: A first package includes a first semiconductor circuit and is configured to generate third compensation data by applying a first image compensation to input image data. A second package includes a second semiconductor circuit, configured to generate first compensation data by applying a second image compensation, different from the first image compensation, to the input image data, and the second package is disposed above the first package. At least one thermal sensor configured to measure the temperature of the second semiconductor circuit; and A third package includes a memory configured to store compensation parameters corresponding to the second image compensation, and the third package is disposed above the first package. The first semiconductor circuit includes: A compensator configured to generate the third compensation data based on the input image data; and The calculator is configured to generate second compensation data based on the input image data and the compensation parameters. The first semiconductor circuit determines whether to turn off the calculator based on the measured temperature of the second semiconductor circuit. Based on this determination, the calculator is prevented from generating the second compensation data. The compensator generates image data based on the first compensation data and the third compensation data, and The third package includes a substrate that supports the memory, and the substrate is electrically connected to the memory.

Images