Built-in microwave batch degassing chamber

Abstract

Methods and apparatus for substrate processing chambers are provided herein. In some embodiments, the substrate processing chamber includes a chamber body having a sidewall defining an interior volume having a polygonal shape, a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body, a funnel disposed at a first end of the chamber body, wherein a size of the funnel increases in a direction from an outer surface of the chamber body to the interior volume, and a pump port disposed at a second end of the chamber body opposite the funnel.

Description

Technical Field

[0001] Embodiments of the present disclosure relate generally to substrate processing systems, and more particularly to degas chambers used in substrate processing systems. Background Art

[0002] In the processing of semiconductor substrates, for example, before performing deposition or other processing on the substrate, the substrate is often degassed between processing to remove absorbed gases, moisture, etc. from the substrate. If the absorbed gaseous impurities are not removed before subsequent processing, the absorbed gaseous impurities may be undesirably outgassed during processing, resulting in contamination, reduced quality, etc. The inventors have observed that a typical degassing chamber processes a single substrate at a time. Multiple degassing chambers may be provided to increase throughput. However, this solution is expensive and leaves a large footprint.

[0003] Accordingly, the inventors provide an improved processing chamber for removing moisture from one or more substrates. Summary of the invention

[0004] Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, the substrate processing chamber includes: a chamber body having a sidewall defining an interior volume having a polygonal shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the size of the funnel increases in a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.

[0005] In some embodiments, a degassing chamber includes: a chamber body including an interior volume having a regular polygonal shape, wherein the chamber body includes a selectively sealable elongated opening for transferring one or more substrates into or out of the chamber body; a substrate support disposed in the interior volume and configured to support the one or more substrates, wherein the substrate support is movable to at least a raised position aligned with the elongated opening and a lowered position; a heat source configured to heat the one or more substrates when the one or more substrates are disposed on the substrate support; a plurality of openings in the chamber body, the plurality of openings configured to allow a gas to flow into the interior volume; and an exhaust port disposed in the chamber body.

[0006] In some embodiments, a microwave degassing chamber includes: a chamber body including an interior volume having a regular polygonal shape, wherein the chamber body includes a first selectively sealable elongated opening for transferring one or more substrates into the chamber body and a second selectively sealable elongated opening for transferring one or more substrates out of the chamber body; a substrate support disposed in the interior volume and configured to support a plurality of substrates; a microwave source coupled to the chamber body at a first end of the chamber body; and a pump coupled to the chamber body at a second end of the chamber body opposite the first end.

[0007] Other and further embodiments of the disclosure are described below. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Embodiments of the present disclosure, briefly summarized above and discussed in more detail below, can be understood by reference to the illustrative embodiments of the present disclosure depicted in the accompanying drawings. However, the accompanying drawings only illustrate typical embodiments of the present disclosure, and therefore the drawings should not be considered limiting of the scope, as the present disclosure may admit to other equally effective embodiments.

[0009] Figure 1 is a schematic side view of a substrate processing chamber in accordance with at least some embodiments of the present disclosure.

[0010] Figure 2 yes Figure 1 Schematic top view of a substrate processing chamber.

[0011] Figure 3 Is oriented Figure 1 A partial isometric view of a second end of a substrate processing chamber.

[0012] Figure 4 Is oriented Figure 1 A partial isometric view of a first end of a chamber body.

[0013] Figure 5 is a schematic side view of a substrate processing chamber in accordance with at least some embodiments of the present disclosure.

[0014] To facilitate understanding, the same reference numerals are used where possible to designate the same elements common to the drawings. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated into other embodiments without further elaboration. DETAILED DESCRIPTION

[0015] Embodiments of substrate processing chambers are provided herein. The substrate processing chambers may be advantageously placed in alignment with a multi-chamber processing tool to save physical floor space and increase throughput. For example, the substrate processing chamber may be advantageously placed below a load lock chamber of a multi-chamber processing tool so that the footprint of the tool is not increased. Examples of multi-chamber processing tools suitable for use with the substrate processing chambers of the present disclosure are any of the Applied product line of processing tools, which are commercially available from Applied Materials, Inc. of Santa Clara, Calif. Other processing chambers from Applied Materials, Inc. or other manufacturers may also benefit from the innovative equipment disclosed herein.

[0016] In some embodiments, the substrate processing chamber is configured to support one substrate and perform a degassing process on the substrate via a resistive heater embedded in a substrate support. In some embodiments, the substrate processing chamber is configured to support one or more substrates so as to advantageously perform a batch degassing process on the one or more substrates via microwave heating. The substrate processing chamber includes a configurable gas flow and pumping arrangement to accommodate degassing of various types of substrates and various batch sizes. For example, silicon semiconductor substrates, polymer substrates, epoxy substrates, or any other substrate suitable for removing moisture via a microwave energy source. The substrate processing chamber described herein can be operated at atmospheric pressure or pressure below atmospheric pressure (e.g., 1×10 -7 Pascal) is used.

[0017] Figure 1 1 is a schematic side view of a substrate processing chamber according to at least some embodiments of the present disclosure. The substrate processing chamber 100 includes a chamber body 102 having a sidewall 104, a lid 112, and a chamber floor 114 surrounding an interior volume 124. In some embodiments, the sidewall 104 defines an interior volume having a polygonal shape. In some embodiments, the sidewall 104 defines an interior volume having a regular polygonal shape. For example, Figure 1 As shown, the sidewall 104 forms an octagonal shape. In some embodiments, the sidewall 104 defines a circular shaped interior volume 124. The sidewall 104 includes a plurality of openings 134 to allow gas to flow into the interior volume 124. In some embodiments, the plurality of openings 134 are symmetrically arranged around the chamber body 102 to advantageously provide a more uniform gas flow across the surface of one or more substrates.

[0018] The chamber body 102 includes an upper portion 106 and a lower portion 108. A cover 112 is disposed on an upper surface of the upper portion 106. The lower portion 108 includes a base plate 146 having a surface defining a chamber floor 114.

[0019] A first elongated opening 110 (e.g., a slit valve opening) that can be selectively sealed is disposed in the upper portion 106 of the chamber body 102 for transferring one or more substrates into or out of the chamber body 102. For example, the first elongated opening 110 can facilitate transferring one or more substrates between the chamber body and a factory interface of a multi-chamber processing tool. In some embodiments, a second elongated opening 120 (e.g., a second slit valve opening) that can be selectively sealed is disposed in the upper portion 106 of the chamber body 102 for transferring one or more substrates into or out of the chamber body 102. For example, the second elongated opening 120 can facilitate transferring one or more substrates between the chamber body 102 and a load lock chamber or other chamber of the multi-chamber processing tool. In some embodiments, the first elongated opening 110 and the second elongated opening 120 are disposed opposite each other.

[0020] The chamber body 102 includes a first end 116 opposite to a second end 118. A microwave source 144 is coupled to the chamber body 102 at the first end 116. The microwave source 144 is configured to provide volumetric heating to the interior volume 124 to degas one or more substrates disposed within the interior volume 124. In some embodiments, the microwave source is a variable frequency microwave source, wherein each frequency is active for a brief period of time. For example, in some embodiments, the brief period of time is in the order of milliseconds. In some embodiments, the microwave source provides microwave energy to the chamber body 102 at a frequency in the range of about 5.0 gigahertz to about 7.0 gigahertz. In some embodiments, the microwave source provides microwave energy having a microwave frequency in the range of about 5.85 gigahertz to about 6.65 gigahertz. In some embodiments, the microwave energy is from a wide C-band source. In some embodiments, the scan rate is about 0.25 microseconds per frequency at 4096 frequencies in the C-band. Using variable frequencies and fast scans can prevent standing wave formation and charge accumulation as well as the need for a rotating heat load. Using variable frequency also allows for uniform temperature distribution across the substrate.

[0021] In some embodiments, the first end 116 includes a maintenance door 122 that is selectively sealable and removable from the remainder of the chamber body 102. The maintenance door 122 is advantageously removable to allow for maintenance and installation of components within the interior volume 124 of the chamber body 102. A funnel 126 extends from an outer surface of the chamber body 102 to one of the side walls 104 to expose the interior volume 124 to microwave energy provided by a microwave source 144. In some embodiments, the funnel 126 may be in one of the side walls 104 defined by the maintenance door 122. In some embodiments, the microwave source 144 provides microwaves having a given wavelength, and the funnel 126 is disposed at least twice the given wavelength from the closest portion of a substrate support 136 disposed in the interior volume 124 to provide more uniform heating of the one or more substrates when the one or more substrates are disposed on the substrate support 136.

[0022] The second end 118 includes a pump port 132 or exhaust port disposed on the chamber body 102 opposite the funnel 126. The pump port 132 is fluidly coupled to a pump 130. The pump 130 may be any pump suitable for evacuating the degassed material from the interior volume 124. In some embodiments, a pump adapter 128 is disposed between the pump port 132 and the pump 130 to facilitate coupling a variety of different pumps to the pump port 132.

[0023] In some embodiments, Figure 5 As shown, a substrate support 502 is disposed in the interior volume 124 of the chamber body 102 and is configured to support a substrate. The substrate support 502 includes a pedestal 504 coupled to a shaft 506 that extends through an opening (e.g., the central opening 306) in the base plate 146. The pedestal 504 includes a resistive heater 504 embedded in the pedestal 504 and coupled to a power source to heat a substrate disposed on the pedestal 504. The substrate support 502 is coupled to a first actuator 150 that controls a position of the pedestal 504 between at least a transfer position and a processing position.

[0024] In some embodiments, and as Figure 1As shown, the substrate support 136 is configured to support a plurality of substrates. For example, in some embodiments, the substrate support 136 includes a plurality of support members 142 disposed in a vertically spaced orientation along a common axis of the substrate support (e.g., aligned along a vertical axis). Although three support members 142 are shown, the substrate support 136 may include any number of support members 142. In some embodiments, the plurality of support members 142 are coupled to a base ring 138, which is disposed below the plurality of support members 142. In some embodiments, the substrate support 136 includes a plurality of lift members 220 (discussed below) corresponding to the plurality of support members 142. The plurality of lift members 220 are coupled to a lift ring 140, which is disposed below the plurality of lift members 220.

[0025] In some embodiments, the base ring 138 is coupled to a first actuator 150 that controls the position of the plurality of support members 142 at least between a transfer position and a processing position. In some embodiments, the lift ring 140 is coupled to a second actuator 160 that controls the position of the plurality of lift members 220 independently of the position of the plurality of support members 142. The first actuator 150 and the second actuator 160 may be any suitable linear motion controller, such as a linear drive servo actuator motor, etc. The first actuator 150 and the second actuator 160 may be disposed outside of the chamber body 102 and pass through an opening in the chamber floor 114 of the chamber body 102 that is sealed by, for example, a stainless steel bellows, etc.

[0026] Figure 2 1 is a schematic top view of the substrate processing chamber 100. The support member 142 may be configured as a ring having a central opening (eg, Figure 2 142) or a plate, or some other planar geometry. Providing support member 142 as a ring or plate advantageously provides full support for the substrate, and in certain applications (such as when the substrate is heated while being disposed on support member 142) can further help flatten a warped substrate.

[0027] Each support member 142 includes a substantially planar support surface to support a substrate having a given size (e.g., a given diameter for a circular substrate, a given length and width for a rectangular substrate, etc.) In some embodiments, one or more support guides may be provided on the support surface to guide the substrate toward a center position on the support surface.

[0028] Each lifting member 220 includes one or more lifting surfaces 218. In some embodiments, the one or more lifting surfaces 218 are fingers extending inwardly. In some embodiments, each support member 142 includes a plurality of slots 216 along a peripheral edge to accommodate the one or more lifting surfaces 218. The lifting surfaces 218 are substantially flat surfaces to support a corresponding substrate and are configured to support a substrate of a given size as discussed above with respect to the support surface. In some embodiments, a plurality of lifting members 220 may be provided for each corresponding support member 142. For example, Figure 2 As shown, a pair of lifting members 220 are provided for each respective support member 142. In some embodiments, a pair of lifting surfaces 218 are provided for each respective support member 142.

[0029] Multiple lifting members 220 (and corresponding lifting surfaces 218) can be moved relative to the support member 142 between a processing position and a transfer position. In the processing position, the lifting surface 218 is set to be coplanar with the support surface of the support member 142 or below the support surface of the support member 142, and in the transfer position, the lifting surface 218 is set above the support surface.

[0030] In some embodiments, one or more openings 212 are provided in the base ring 138 to facilitate coupling the base ring 138 to the first actuator 150. The first actuator 150 may include an actuator shaft that may extend through an opening in the chamber floor 114 and be coupled to the base ring 138. In some embodiments, one or more openings 214 are provided in the lift ring 140 to facilitate coupling the lift ring 140 to the second actuator 160. The second actuator 160 may include an actuator shaft that may extend through an opening in the chamber floor 114 and be coupled to the lift ring 140.

[0031] In some embodiments, the upper surface of the chamber body 102 includes an O-ring groove 206 disposed around the sidewall 104. The O-ring groove 206 is configured to receive an O-ring to provide a seal between the lid 112 and the chamber body 102. In some embodiments, the O-ring groove 206 may correspond to the shape of the sidewall 104. For example, Figure 2 As shown, the O-ring groove 206 has an octagonal shape. In some embodiments, the chamber body 102 includes an RF gasket groove 208 to accommodate a metal RF gasket. The RF gasket groove 208 is disposed between the sidewall 104 and the O-ring groove 206. The RF gasket groove 208 is configured to receive the RF gasket to advantageously reduce or prevent microwave energy from leaking to and degrading the O-ring disposed in the O-ring groove 206. In some embodiments, the chamber body 102 includes a similar arrangement of an O-ring groove and an RF gasket groove at the interface between the maintenance door 122 and the remainder of the chamber body 102.

[0032] In some embodiments, the gas source 202 is fluidly coupled to the plurality of openings 134 in the chamber body to provide a gas flow to the interior volume 124 to assist in removing unwanted materials, such as moisture, from the interior volume 124. In some embodiments, the gas source 202 is configured to provide a gas flow to the interior volume 124 from a plurality of sides 104. For example, the gas flow paths 204a-204c extend from the side wall 104 adjacent to the funnel 126. In some embodiments, the gas flow paths 204d-204e extend from the side wall 104 having the first elongated opening 110 and the second elongated opening 120, respectively.

[0033] Figure 3 1 is a partial isometric view of the second end 118 facing the substrate processing chamber 100. In some embodiments, a mesh screen 314 is disposed between the interior volume of the chamber body 102 and the pump port 132. The mesh screen 314 includes a plurality of openings 318 covering the pump port. The plurality of openings 318 are configured to reduce or eliminate microwave leakage through the pump port 132. The plurality of openings 318 may have a circular shape, a regular polygonal shape, or any other suitable shape. In some embodiments, the plurality of openings 318 are sized to be less than one quarter of a given wavelength of a microwave source. In some embodiments, the plurality of openings 318 are sized to be about 2.5 mm to about 5.0 mm.

[0034] In some embodiments, RF gasket groove 304 is disposed in the outer surface 320 of chamber body 102 and surrounds first elongated opening 110 to advantageously reduce or prevent microwave leakage. In some embodiments, RF gasket groove 324 is disposed in the outer surface 322 of chamber body 102 and surrounds second elongated opening 120.

[0035] The chamber floor 114 includes one or more openings. In some embodiments, the chamber floor 114 includes a central opening 306 configured to accommodate a substrate support including a pedestal and an embedded resistive heater. In some embodiments, a plate 312 is disposed above the central opening 306 and coupled to the chamber floor 114. When the substrate support 136 includes a plurality of support members 142, the plate 312 is configured to cover the central opening 306, such as Figure 3 The central opening 306 together with the plate 312 allows the chamber body 102 to be connected to various substrate supports (e.g., Figure 5 In some embodiments, the chamber floor 114 includes an opening 308 to accommodate the first actuator 150. In some embodiments, the chamber floor 114 includes an opening 310 to accommodate the second actuator 160.

[0036] In some embodiments, the temperature sensor 316 is disposed in the sidewall 104 of the chamber body. In some embodiments, the temperature sensor 316 is disposed between the first elongated opening 110 and the chamber floor 114. In some embodiments, the temperature sensor 316 is disposed between the second elongated opening 120 and the chamber floor 114. In some embodiments, the temperature sensor 316 is a non-contact infrared sensor. In some embodiments, the temperature sensor 316 is configured to measure the temperature of the bottom-most substrate when disposed on the substrate support 136. In some embodiments, the temperature sensor 316 is coupled to a PID controller to control the microwave energy output to the chamber body 102 to maintain one or more substrates within a desired temperature range.

[0037] Figure 4 1 is a partial isometric view of the first end 116 facing the chamber body 102 according to at least some embodiments of the present disclosure. The chamber body 102 includes a funnel 126 to expose the internal volume 124 to microwave energy provided by the microwave source 144. In some embodiments, the size of the funnel 126 increases along the direction from the outer surface of the chamber body 102 to the internal volume 124. In some embodiments, the funnel 126 includes a surface 404 facing the internal volume, and the surface 404 facing the internal volume is arranged to form a funnel opening 412 of a rectangular cross-section. In some embodiments, one or more of the surfaces 404 facing the internal volume include a plurality of openings 406 to allow gas to flow into the internal volume 124. In some embodiments, the plurality of openings 406 are disposed on opposite surfaces 404 facing the internal volume. In some embodiments, the plurality of openings 406 are part of the plurality of openings 134 discussed above. For example, the plurality of openings 406 may correspond to the gas flow path 204a. In some embodiments, the surface 404 facing the internal volume is inclined at an angle between about 25 degrees and about 55 degrees relative to the central axis of the funnel.

[0038] In some embodiments, the sidewall 104 adjacent to the funnel 126 includes a plurality of openings 410 arranged in a series of rows and columns or any other suitable pattern to allow gas to flow into the interior volume. In some embodiments, the plurality of openings 410 are part of the plurality of openings 134 discussed above. For example, the plurality of openings 410 may correspond to the gas flow path 204b and the gas flow path 204c. In some embodiments, the plurality of openings 410 are disposed in a removable gas plate 414 disposed in a gas plate cutout 408 on the sidewall 104. The removable gas plate 414 advantageously allows the size and positioning of the plurality of openings 410 to be customized according to the requirements of each degassing process.

[0039] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.

Claims

1. A substrate processing chamber, comprising: a chamber body having sidewalls defining an interior volume having a polygonal shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed in one of the side walls of the chamber body at a first end of the chamber body, wherein an opening of the funnel increases in size in a direction from an outer surface of the chamber body to the interior volume, and wherein the funnel is coupled to a microwave source; a plurality of openings disposed in the sidewall adjacent the funnel to allow gas to flow into the interior volume; as well as A pump port is disposed at a second end of the chamber body opposite the funnel.

2. The substrate processing chamber of claim 1, wherein a surface of the funnel facing the interior volume is arranged to form a funnel opening of rectangular cross-section.

3. The substrate processing chamber of claim 1, wherein the opening of the funnel extends to an adjacent one of the sidewalls of the chamber body on a side facing the interior volume.

4. The substrate processing chamber of claim 1, wherein a surface of the funnel comprises a plurality of gas openings.

5. The substrate processing chamber of any one of claims 1 to 4, further comprising: An RF gasket slot is disposed in the exterior surface of the chamber body and surrounds the selectively sealable elongated opening.

6. The substrate processing chamber of any one of claims 1 to 4, further comprising an O-ring groove and an RF gasket groove, wherein the O-ring groove is arranged on the top surface of the chamber body and surrounds the side wall, and the RF gasket groove is arranged between the side wall and the O-ring groove.

7. The substrate processing chamber of any one of claims 1 to 4, further comprising: An opening in a chamber floor of the chamber body is configured to receive a substrate support.

8. The substrate processing chamber of any one of claims 1 to 4, further comprising: A second selectively sealable elongated opening, opposite the selectively sealable elongated opening, is provided for transferring one or more substrates into or out of the chamber body.

9. A degassing chamber comprising: a chamber body comprising an interior volume having a polygonal shape, wherein the chamber body comprises a selectively sealable elongated opening for transferring one or more substrates into or out of the chamber body; a substrate support disposed in the interior volume and configured to support one or more substrates, wherein the substrate support is movable to at least a raised position aligned with the elongated opening and a lowered position; a heat source configured to heat the one or more substrates while the one or more substrates are disposed on the substrate support, wherein the heat source is a microwave source; a funnel disposed in one of the side walls of the chamber body, wherein the funnel is coupled to the microwave source; a plurality of openings disposed in the sidewall adjacent the funnel to allow gas to flow into the interior volume; as well as An exhaust port is disposed in the chamber body, wherein the funnel is opposite to the exhaust port.

10. The degas chamber of claim 9, wherein the substrate support is configured to support a plurality of substrates.

11. The degassing chamber of claim 10, wherein a size of the opening of the funnel increases in a direction toward the interior volume.

12. The degassing chamber of claim 11, wherein the funnel has a rectangular cross-sectional shape.

13. The degas chamber of any one of claims 9 to 12, wherein the substrate support comprises a plurality of support members configured to support a plurality of substrates in a vertically spaced-apart orientation.

14. The degassing chamber of any one of claims 9 to 12, further comprising a mesh screen disposed between the chamber body and the exhaust port, wherein the mesh screen comprises a plurality of openings configured to reduce or eliminate microwave leakage through the exhaust port.

15. The degassing chamber of any one of claims 9 to 12, further comprising a temperature sensor disposed in a side wall of the chamber body between the elongated opening and a chamber floor of the chamber body.

16. The degassing chamber of any one of claims 9 to 12, further comprising a gas source fluidly coupled to the plurality of openings.

17. The degassing chamber of claim 9, wherein the degassing chamber is a microwave degassing chamber, the microwave source being coupled to the chamber body at a first end of the chamber body.

18. The degassing chamber of claim 17, wherein the microwave source provides microwaves to the chamber body at a frequency ranging from 5.0 GHz to 7.0 GHz.

19. The degassing chamber of any one of claims 17 to 18, wherein the microwave source provides microwaves having a given wavelength, and wherein the funnel has an opening disposed at a distance of at least twice the given wavelength from a proximal portion of the substrate support.

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