An organic field-effect transistor memory based on fluorenone polymer electrets

Abstract

This invention discloses an organic field-effect transistor (OFET) memory based on a fluorenone polymer electret. The memory, from bottom to top, comprises a substrate and, on the substrate, a gate electrode, a gate insulating layer, a pillar layer, an organic semiconductor layer, and source / drain electrodes. The electret layer is a fluorenone polymer with a thickness of 10–30 nm. A charge-trapping layer thin film is prepared from fluorenone polymer electrets of different compositions using a spin-coating solution method. Based on this charge-trapping layer, the OFET memory can achieve bidirectional charge storage under photoelectric control, as well as millisecond-level fast response and good bidirectional tolerance. Furthermore, the entire process is simple and low-cost. This method is an effective and universal way to improve polymer storage behavior. The prepared non-volatile OFET memory can be applied in flexible and wearable electronic devices, which is beneficial for the further development, promotion, and production of future memory devices.

Description

Technical Field

[0001] This invention relates to an organic field-effect transistor memory based on fluorenone polymer electrets, which can be used in the fields of novel organic semiconductor memories and information technology. Background Technology

[0002] Since the 1990s, electronic devices have become an integral part of our lives. Memory is an essential component of various electronic information products (computers, mobile phones, game consoles, wearable devices, etc.). In the future, it will extract enormous value from data; therefore, in addition to powerful computing capabilities, massive data storage is crucial for unlocking the value of data. Consequently, with the advent of the Internet of Things, 5G, big data, and artificial intelligence (AI) era, the memory semiconductor market has begun a new round of explosive growth.

[0003] However, with the further slowdown and failure of Moore's Law, the miniaturization process of planar memories based on inorganic semiconductors has reached its physical limits. To address this challenge, attention has been turned to the utilization of 3-D NVMs on the one hand, and the focus has shifted to the development of new types of memories on the other. However, from a long-term perspective, the utilization of 3-D NVM devices is only a stopgap measure and will eventually fall back into the size dilemma. Therefore, developing emerging memory technologies has become a long-term solution. Emerging memory technologies mainly include phase-change PCM, ferroelectric RAM, magnetic RAM, memristors, and flash memory. Compared with inorganic memory materials, organic materials have many advantages such as low cost, solution processing capability, large-area fabrication capability, and compatibility with flexible substrates. OFET memories based on small molecules and polymers, as a type of new organic memory, can not only achieve precise charge modulation but also have lossless readout and multi-bit storage capabilities. Furthermore, they open up possibilities for multifunctional integrated circuits and are one of the important development directions for future memories.

[0004] However, compared to other novel memory technologies, polymer- and small-molecule-based OFET memory still faces numerous challenges, such as high operating voltage, low read / write speed, slow erasure / write speed, and short retention time. To address these challenges, scientists are working on two fronts: firstly, optimizing device structures at the device level to improve interface barriers and carrier trapping; and secondly, focusing on the development and design of materials, including organic semiconductor layers and charge trapping layer materials. Organic field-effect transistor (OFET) memory charge trapping layers can be categorized into three types based on their trapping characteristics: ferroelectric, floating-gate, and electret. Each type of trapping layer material has its own advantages and disadvantages.

[0005] Ferroelectric materials include PZT, MXD6, or P(VDF / TrFE). Their field-effect transistor (OFET) memories are unaffected by external conditions and can retain data for extended periods, but suffer from issues such as high leakage current, poor tolerance, and weak polarization retention. Floating-gate OFETs are primarily made of metal particles such as Au, Ag, and Cu, as well as nanoparticles and two-dimensional materials from organic materials. Ferroelectric OFETs offer high storage density and can be fabricated over large areas on flexible substrates, but suffer from high erase / write voltages, poor storage stability, and complex fabrication processes and device structures. Organic electret OFETs, without an external electric field, are dielectrics that can semi-permanently maintain their polarization state, capturing and stably storing charge. They possess storage characteristics and insulation properties, but suffer from excessively high operating voltages, slow read / write speeds, poor tolerance, and an unclear relationship between the storage mechanism and molecular structure. It is noteworthy that, compared to floating-gate OFETs, they do not require separate charge trapping and tunneling layers; a single organic electret layer simultaneously achieves charge tunneling and charge storage.

[0006] Electret materials for electret field-effect transistor (FET) memory can effectively trap and stabilize charges. Furthermore, the molecular structure of organic electrets is designable and can be customized through advanced organic synthesis methods. This enables low-cost low-temperature solution processing, simple device structure, easy fabrication, compatibility with flexible substrates, and high compatibility with current CMOS circuits. As a result, it has become the mainstream of current field-effect transistor device research. Summary of the Invention

[0007] The purpose of this invention is to solve the above-mentioned problems existing in the prior art and to propose an organic field-effect transistor memory based on fluorenone polymer electrets.

[0008] The objective of this invention will be achieved through the following technical solution: the organic field-effect transistor memory comprises, from bottom to top, a substrate and a gate electrode, a gate insulating layer, a pillar layer, an organic semiconductor layer and a source / drain electrode on the substrate, wherein the electret layer is a fluorenone polymer and the thickness of the fluorenone polymer is 10-30 nm.

[0009] Preferably, the selected substrate is made of highly doped silicon wafer, glass sheet, or polyethylene terephthalate.

[0010] Preferably, the gate electrode is made of one of highly doped silicon, aluminum, copper, titanium, gold, silver or tantalum; the gate insulating layer is made of one of silicon dioxide, aluminum oxide, zirconium oxide, polystyrene or polyvinylpyrrolidone, and the thickness of the gate insulating layer is 50-300 nm.

[0011] Preferably, the organic semiconductor layer is made of one of pentanebenzene, tetrabenzene, copper phthalocyanine, copper phthalocyanine fluoride, red fluorene, triphenylene, or 3-hexylthiophene. The organic semiconductor layer thin film is deposited on the surface of the pillar layer, and the thickness of the organic semiconductor layer is 30-50 nm.

[0012] Preferably, the source electrode and drain electrode are made of metal or organic conductive material, the thickness of the source electrode and drain electrode is 50-100 nm, and an organic semiconductor conductive channel is provided between the source electrode and drain electrode.

[0013] Preferably, the general structural formula of the fluorenone polymer is as follows:

[0014]

[0015] Where: x is a natural number from 1 to 100, y is a natural number from 1 to 100, x+y=100, and n is a natural number from 1 to 300.

[0016] Preferably, Ar is an aromatic conjugated structural unit, specifically one of the following structures:

[0017]

[0018] Wherein: R1 and R2 are hydrogen or straight-chain, branched or cyclic alkyl chains or alkoxy chains having 1 to 22 carbon atoms.

[0019] Compared with existing technologies, the present invention has the following technical advantages: The present invention prepares a charge trapping layer thin film from electrets of different fluorenone polymers using a spin-coating solution method. Based on this charge trapping layer, the OFET memory can not only achieve bidirectional charge storage under photoelectric control, but also achieve millisecond-level fast response and good bidirectional tolerance. Moreover, the entire operation process is simple and low-cost. These results indicate that this method is an effective and universal method for improving polymer storage behavior. The prepared non-volatile OFET memory can be applied in flexible and wearable electronic devices, which is conducive to the further development, promotion and production of future memory devices.

[0020] 1. This invention provides a method for synthesizing fluorenone polymers, using common and inexpensive solvents such as toluene or chloroform, and employing solution processing spin coating to form films. This method is simple and low in cost.

[0021] 2. The OFET electret memory provided by this invention achieves bidirectional storage under photoelectric control;

[0022] 3. The OFET electret memory provided by this invention achieves a relatively fast storage speed at the millisecond level;

[0023] 4. The OFET electret memory provided by this invention can still achieve good bidirectional tolerance after hundreds of read, write and erase cycles.

[0024] 5. This invention regulates device performance by controlling the composition of polymers, providing a reference for the future development and design of materials that are more conducive to storage;

[0025] 6. The fluorenone polymer materials synthesized in this invention were analyzed by proton nuclear magnetic resonance spectroscopy (NMR spectroscopy). 1 The molecular structure was characterized by H NMR. The advantages of this type of material are: (1) the synthesis method is simple and has good scalability; (2) compared with COFs and MOFs, the fluorenone polymer material provided by this invention can be processed in solution over a large area. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the organic field-effect transistor memory of the present invention.

[0027] Figure 2 This is the hydrogen nuclear magnetic resonance spectrum of polymer 1 in this embodiment of the invention.

[0028] Figure 3 The above is the proton NMR spectrum of polymer 2 in this embodiment of the invention.

[0029] Figure 4 This is a graph showing the transfer output characteristics of the organic field-effect transistor memory of polymer 1 in Embodiment 1 of the present invention.

[0030] Figure 5 This is a graph showing the transfer output characteristics of the organic field-effect transistor memory of polymer 2 in Embodiment 1 of the present invention.

[0031] Figure 6 This is an output characteristic curve of the organic field-effect transistor memory of polymer 1 in Embodiment 1 of the present invention.

[0032] Figure 7 This is a graph showing the output characteristics of the organic field-effect transistor memory of polymer 2 in Embodiment 1 of the present invention.

[0033] Figure 8 This is a graph showing the positive and negative memory window characteristics of the organic field-effect transistor memory based on polymer 1 in Embodiment 1 of the present invention.

[0034] Figure 9 The graphs show the positive and negative memory window characteristics of the organic field-effect transistor memory based on polymer 2 in this embodiment of the invention.

[0035] Figure 10This is a graph showing the memory window versus write time dependence characteristics of the organic field-effect transistor memory based on polymer 1 tested in an embodiment of the present invention.

[0036] Figure 11 This is a graph showing the memory window versus write time dependence characteristics of the organic field-effect transistor memory based on polymer 2 tested in an embodiment of the present invention.

[0037] Figure 12 This is a graph showing the 100-cycle forward read / write / erase characteristic curves of the organic field-effect transistor memory based on polymer 1 in an embodiment of the present invention.

[0038] Figure 13 This is a graph showing the negative read / write / erase cycle characteristics of the organic field-effect transistor memory based on polymer 1 in an embodiment of the present invention. Detailed Implementation

[0039] The objectives, advantages, and features of this invention will be illustrated and explained through the following non-limiting description of preferred embodiments. These embodiments are merely typical examples of applying the technical solutions of this invention, and all technical solutions formed by equivalent substitutions or equivalent transformations fall within the scope of protection claimed by this invention.

[0040] This invention discloses an organic field-effect transistor memory based on fluorenone polymer electrets, such as... Figure 1 As shown, the organic field-effect transistor memory includes, from bottom to top, a substrate and a gate electrode, a gate insulating layer, a pillar layer, an organic semiconductor layer, and source / drain electrodes on the substrate. The electret layer is a fluorenone polymer with a thickness of 10–30 nm. The fluorenone polymer electret is a type of fluorenyl molecular derivative material.

[0041] The selected substrate is made of highly doped silicon wafer, glass sheet, or polyethylene terephthalate. The gate electrode is made of one of the following materials: highly doped silicon wafer, aluminum, copper, titanium, gold, silver, or tantalum; the gate insulating layer is made of one of the following materials: silicon dioxide, alumina, zirconium oxide, polystyrene, or polyvinylpyrrolidone, and the thickness of the gate insulating layer is 50–300 nm.

[0042] The organic semiconductor layer is made of one of the following materials: pentanediol, tetraphenylene, copper phthalocyanine, fluorinated copper phthalocyanine, rubrene, triphenylene, or 3-hexylthiophene. The organic semiconductor layer thin film is deposited on the surface of the pillar layer, and the thickness of the organic semiconductor layer is 30–50 nm. The source electrode and drain electrode are made of metal or organic conductive material, and the thickness of the source electrode and drain electrode is 50–100 nm. An organic semiconductor conductive channel is formed between the source electrode and drain electrode.

[0043] The schematic diagram of the OFET memory structure is shown below. Figure 1 As shown, it includes: an N-type heavily doped silicon substrate; a gate electrode formed on the substrate; a gate insulating layer covering the gate electrode; a charge trapping layer formed on the gate insulating layer; an organic semiconductor layer formed on the charge trapping layer; and metal source / drain electrodes on the organic semiconductor layer.

[0044] The substrate is generally selected from highly doped silicon wafers, glass sheets or flexible plastics. In this embodiment, N-type heavily doped silicon is used as the substrate and gate electrode; silicon dioxide with a thickness of 50-300 nm is used as the gate insulating layer; polymers 1 and 2 of Example 1 are used as charge storage layers with a thickness of 10-30 nm; a 30-50 nm thick pentacene layer is deposited on the charge storage layer as an organic semiconductor layer; copper is deposited on the pentacene semiconductor layer as the source and drain electrodes.

[0045] The general structural formula of the fluorenone polymers is as follows:

[0046]

[0047] Where: x is a natural number from 1 to 100, y is a natural number from 1 to 100, x + y = 100, and n is a natural number from 1 to 300;

[0048] Ar represents an aromatic conjugated structural unit, specifically one of the following structures:

[0049]

[0050] Wherein: R1 and R2 are hydrogen or straight-chain, branched or cyclic alkyl chains or alkoxy chains having 1 to 22 carbon atoms.

[0051] This invention also discloses a method for fabricating an organic field-effect transistor memory based on fluorenone polymer electrets, comprising the following steps:

[0052] S1: Preparation of fluorenone polymer electret material solution: Dissolve polyfluorene material in solvent, heat or sonicate to fully dissolve it, and obtain polyfluorene solution;

[0053] S2: Cleaning the substrate: Take the substrate material as the substrate, and form a gate electrode and a gate insulating layer on the substrate. Then, it is ultrasonically cleaned in three steps of acetone, ethanol and deionized water for 10-20 minutes in sequence, and then dried to obtain a clean substrate.

[0054] S3: Treat the dried clean substrate with ultraviolet ozone for 3-5 minutes to increase the hydrophilicity of the silicon wafer surface;

[0055] S4: Spin-coat the solution prepared in step S1 onto the substrate obtained in step S3, and then anneal the spin-coated substrate in a drying oven at a suitable temperature for 30 minutes.

[0056] S5: On the substrate annealed in step S4, an organic semiconductor layer is prepared by thermal vacuum evaporation or solution spin coating, and then the source and drain electrodes are prepared by magnetron sputtering, inkjet printing or vacuum evaporation.

[0057] S6: After the source and drain electrodes are deposited, wait for the temperature inside the vacuum deposition chamber to cool to room temperature to obtain the final organic field-effect transistor memory based on fluorenone polymer electret.

[0058] In step S1, the solvent used to prepare the polyfluorene solution is toluene or chloroform, and the concentration of the polyfluorene solution is 3-10 mg / mL.

[0059] In step S4, spin coating is performed in air or in a glove box. In air, the humidity is controlled below 60%, the spin coating speed is 1000-3000 rpm, the time is 10-30 seconds, and the annealing temperature is 80°C.

[0060] In step S5, the conditions for vacuum evaporation of the organic semiconductor layer are: evaporation rate is... Vacuum degree controlled at 6×10 -5 pa~6×10 -4 pa; The conditions for vacuum evaporation of source and drain electrodes are: evaporation rate Vacuum degree controlled at 6×10 -5 pa~6×10 -4 pa; the aspect ratio of the mask is 10 to 20.

[0061] Example 1

[0062] In this embodiment, the fluorenone polymer electret is used. For polymer 1, X is 10 and y is 90; for polymer 2, X is 20 and y is 80, and Ar is fluorene; R1 and R2 are both n-octyl.

[0063] The specific molecular formula is as follows:

[0064]

[0065] Synthesis route:

[0066]

[0067] Specific preparation method: Dibromofluorenone (33.6 mg, 0.1 mmol), alkylfluorene (546 mg, 1 mmol), fluorene borate (578 mg, 0.9 mmol), and Pd(PPh3)4 (23.1 mg, 2 mol%) were added to a 50 ml double-necked round-bottom flask. THF (15 ml) and K2CO3(aq) (1 M, 5 ml) were added to the reaction system separately using syringes. Before use, THF and K2CO3(aq) were purged with N2 for half an hour to remove oxygen. The reaction system was heated to 80 °C under N2 atmosphere and reacted for 72 hours. If the solution in the system decreased during the reaction, it was replenished in time. After the reaction was completed, end-capping treatment was performed. Bromobenzene (0.1 equiv) was added to the reaction system by syringe. Two hours later, phenylboronic acid (0.1 equiv) was added to the reaction system. The reaction was allowed to proceed overnight to complete the end-capping treatment.

[0068] After the system cooled to room temperature, it was added dropwise to stirred methanol (200 ml). The polymer precipitated, and the crude polymer product was obtained by filtration. After drying in a vacuum drying oven at 50 °C, it was dissolved in chloroform solution and subjected to rapid column chromatography in chloroform to remove impurities such as palladium and inorganic salts. The obtained polymer precipitated in methanol (200 ml). The filtered polymer was extracted with methanol, acetone, and n-hexane respectively using Soxhlet extraction until the extract became colorless to remove low molecular weight polymers.

[0069] The polymer precipitate washed off with chloroform was collected and dissolved in methanol to obtain the target polymer. After filtration, the polymer was dried in a vacuum drying oven at 50°C to obtain a glossy orange-yellow solid polymer 1 (339 mg, 61%). 1 H NMR (400MHz, CDCl3) δ (ppm): 8.10 (s, 2H), 7.96-7.90 (d, 2H), 7.89-7.70 (d, 14H), 7.76 (s, 2H), 7.74-7.70 (d, 12H), 7.66(s, 12H), 7.62-7.60(d, 2H), 7.55-7.49(d, 2H), 1.65-1.53(m, 38H), 1.26-1.06(m, 134H), 0.89-0.79(m, 56H).

[0070] Polymer 2: Dibromofluorenone (67.2 mg, 0.2 mmol), alkylfluorene (546 mg, 1 mmol), fluorene borate (513 mg, 0.8 mmol), and Pd(PPh3)4 (23.1 mg, 2 mol%) were added to the above reaction system and a glossy brown solid polymer 2 (308 mg, 55%) was obtained by the same post-treatment method. 1H NMR (400MHz, CDCl3) δ (ppm): 8.09 (s, 2H), 7.94-7.89 (d, 2H), 7.88-7.80 (d, 6H), 7.75-7.74 (d, 2H), 7.72-7.69 (d, 6H), 7.68- 7.63(d, 6H), 7.54(s, 2H), 7.44-7.34(d, 2H), 2.32-1.92(m, 16H), 1.78-1.47(m, 6H), 1.36-0.96(m, 87H), 0.5-0.50(m, 43H). Figure 2 The image shows the proton NMR spectrum of polymer 1. Figure 3 The image shows the proton NMR spectrum of polymer 2.

[0071] Example 2

[0072] In this embodiment, heavily doped silicon serves as the substrate and gate electrode; a 300 nm thick silicon dioxide layer on the N-type heavily doped silicon serves as the gate insulating layer; polymers 1 and 2 from Example 1 serve as charge storage layers with a thickness of 20 nm; a 50 nm thick pentacene layer is then deposited on the charge storage layer to serve as an organic semiconductor layer; finally, copper is deposited on the pentacene organic semiconductor layer to serve as the source and drain electrodes.

[0073] During the experiment, the laboratory temperature was maintained at around 25°C and the humidity at 40%.

[0074] The memory in this embodiment is specifically prepared using the following steps:

[0075] (1) Prepare a solution of fluorenone polymer electret material. The solvent is toluene and the solution concentration is 3 mg / mL. Heat or sonicate to dissolve it completely. Let it stand for 24 hours to disperse it evenly.

[0076] (2) Clean the substrate with acetone, ethanol and deionized water for 15 minutes each in sequence, then blow the surface of the substrate with high-purity nitrogen to ensure that the substrate surface is clean, and then put the substrate into an oven at 120°C to dry.

[0077] (3) Place the dried substrate in an ultraviolet ozone generator for 10 minutes;

[0078] (4) Spin coat the substrate surface treated in step (3) with the solution prepared in step (1), spin coating speed of 3000 rpm and time of 30s; place the spin-coated substrate in an oven at 80℃ for annealing for 30min.

[0079] (5) A benzene layer is deposited on the thin film surface treated in step (4) using a vacuum evaporation equipment at a evaporation rate of [missing information]. Vacuum degree 5×10 -4Below Pa, the thickness of the pentacene is 30 nm; then it is removed, a mask is added, and multiple groups are processed in the same batch. Vacuum evaporation of copper is used as the source and drain electrodes, and the evaporation rate is... Vacuum degree is 5×10 -4 The electrode thickness is around 60 nm and the mask template controls the channel width and length of a single group to be 1500 μm and 100 μm, respectively.

[0080] After the device was fabricated, its electrical properties were characterized by a Keysight 2636B semiconductor analyzer, and the data was then processed and plotted for analysis.

[0081] Figure 4 The graph shows the characteristic transfer curves of the organic field-effect transistor memory based on polymer 1. Figure 4 As can be seen, the transistor mobility reaches 0.58 cm⁻¹. 2 V -1 S -1 The on / off ratio is 10. 5 . Figure 5 The graph shows the transfer characteristics of the polymer-2 based organic field-effect transistor memory. Figure 5 As can be seen, the transistor mobility reaches 0.35 cm⁻¹. 2 V -1 S -1 The on / off ratio reaches 10. 6 .

[0082] Figure 8 This is a storage window diagram based on Polymer 1, by Figure 8 It can be seen that the memory device based on polymer 1 achieves hole storage of 20.5V and electron storage of 46.8V under photoelectric control. Figure 9 For a storage window diagram based on Polymer 2, from Figure 9 As can be seen from the storage window shown, the polymer 2-based storage device achieves 29.1V hole storage and 41.8V electron storage under photoelectric control.

[0083] from Figure 10 The fast write graph of the polymer-1 based storage device shown illustrates that even when the write time is reduced to the millisecond level, the storage window only decreases slightly. From... Figure 11 The fast write graph of the polymer 2-based storage device shown can be seen that even when the write time is reduced to the millisecond level, the storage window only decreases slightly.

[0084] from Figure 12 The forward read / write / erase cycle diagram of the polymer-based memory device shown can be seen that after 100 cycles, the on / off ratio remains at 10. 3 .from Figure 13The negative read / write / erase cycle diagram of the polymer-based memory device shown can be seen that after 100 cycles, the on / off ratio remains at 10. 2 .

[0085] This invention applies fluorene-ketone polymer electret thin films to organic field-effect transistor (OFET) memories, serving as the charge storage layer of the device. The charge trapping layer thin film is prepared by spin-coating solution method with polyfluorene. Based on this charge trapping layer, the OFET memory can not only achieve bidirectional storage under photoelectric control, but also achieve millisecond-level fast response and good bidirectional tolerance. Moreover, the operation process is simple, the cost is low, and it is conducive to the promotion and production of future memory devices.

[0086] This technical solution utilizes the unique chemical and physical properties of fluorenone polymer electrets to provide a simple and low-cost process for preparing molecular thin films, which are then applied in OFET memories to serve as the charge trapping layer of the memory.

[0087] This invention has many other embodiments, and all technical solutions formed by equivalent transformation or equivalent transformation fall within the protection scope of this invention.

Claims

1. An organic field-effect transistor memory based on fluorenone polymer electrets, characterized in that: The organic field-effect transistor memory comprises, from bottom to top, a substrate and, based on the substrate, a gate electrode, a gate insulating layer, a pillar layer, an organic semiconductor layer, and source / drain electrodes. The pillar layer is a fluorenone polymer with a thickness of 10–30 nm. The general structural formula of the fluorenone polymers is as follows: Where: x is a natural number from 1 to 100, y is a natural number from 1 to 100, x + y = 100, n is a natural number from 1 to 300; Ar is an aromatic conjugated structural unit, specifically one of the following structures: Wherein: R1 and R2 are hydrogen or straight-chain, branched or cyclic alkyl chains or alkoxy chains having 1 to 22 carbon atoms.

2. The organic field-effect transistor memory based on fluorenone polymer electret according to claim 1, characterized in that: The selected substrate material is a highly doped silicon wafer, a glass sheet, or polyethylene terephthalate.

3. The organic field-effect transistor memory based on fluorenone polymer electret according to claim 1, characterized in that: The gate electrode is made of one of the following materials: highly doped silicon wafer, aluminum, copper, titanium, gold, silver, or tantalum; the gate insulating layer is made of one of the following materials: silicon dioxide, aluminum oxide, zirconium oxide, polystyrene, or polyvinylpyrrolidone, and the thickness of the gate insulating layer is 50–300 nm.

4. The organic field-effect transistor memory based on fluorenone polymer electret according to claim 1, characterized in that: The organic semiconductor layer is made of one of the following materials: pentanediol, tetraphenyl, copper phthalocyanine, fluorinated copper phthalocyanine, red fluorene, triphenyl, or 3-hexylthiophene. The organic semiconductor layer thin film is deposited on the surface of the electret layer, and the thickness of the organic semiconductor layer is 30-50 nm.

5. The organic field-effect transistor memory based on fluorenone polymer electret according to claim 1, characterized in that: The source and drain electrodes include a source electrode and a drain electrode; the source and drain electrodes are made of metal or organic conductive materials, and the thickness of the source and drain electrodes is 50-100nm. An organic semiconductor layer is disposed between the source and drain electrodes as a conductive channel.

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