Substrate processing equipment

Abstract

The present invention relates to a substrate processing device capable of improving the efficiency of a substrate processing process by adjusting the flow rate and residence time of a gas and the plasma density according to process conditions. The substrate processing device according to an embodiment of the present disclosure has the advantage that, in a process of supplying a gas through the shape formation of a gas injection module including a first injection plate and a second injection plate, the flow rate of the gas is reduced and the residence time and plasma density of the gas are increased, so that the efficiency in the substrate processing process can be improved.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of improving efficiency in a substrate processing process by adjusting a flow rate and a residence time of a gas and a plasma density according to process conditions. Background Art

[0002] Generally, it is necessary to form a multi-layer thin film, a thin film circuit pattern, and / or a light pattern on a substrate in order to manufacture semiconductor devices, flat panel displays, solar cells, etc. To this end, processes such as a deposition process for depositing a thin film made of a specific material on the substrate, a photographic process for selectively exposing the thin film using a photosensitive material, and an etching process for selectively removing the exposed portion of the thin film to form a pattern are performed on the substrate.

[0003] The process of processing the substrate is performed by the substrate processing apparatus. The conventional substrate processing apparatus includes: a chamber for processing the substrate, a substrate support for supporting the substrate, and an electrode unit arranged on the substrate support. The conventional substrate processing apparatus performs processing on the substrate by supplying gas to the substrate through the electrode unit.

[0004] On the other hand, a conventional substrate processing apparatus includes: a lower electrode having gas inlet and outlet surfaces thereon in a planar shape; and an upper electrode having a gas supply passage having diameters of equal size at the center and the outside thereof.

[0005] Therefore, conventional substrate processing apparatuses do not consider the difference between the flow rate and residence time of the gas and the plasma density at the center and the outside of the upper electrode in the process of supplying gas through the lower electrode, which leads to a decrease in the efficiency of substrate processing. In addition, it is difficult to form a uniform thin film on the substrate in a large-area substrate processing apparatus. Summary of the invention

[0006] Various embodiments relate to a substrate processing apparatus configured such that: a second electrode as a lower electrode has an insertion hole through which a gas is supplied, an opening area of ​​an inlet of the insertion hole gradually increases from the center toward the edge of the second electrode, and the second electrode has a concave dome lower surface. Therefore, the substrate processing apparatus can increase the residence time of the gas by reducing the flow rate of the gas at the edge rather than the center of the second electrode, form a uniform thin film by increasing the plasma density, and enhance the efficiency in the substrate processing process.

[0007] In an embodiment, a substrate processing device is provided, comprising: a processing chamber configured to provide a reaction space for processing a substrate; a substrate support configured to support a substrate; a first electrode installed in the processing chamber to face the substrate and having a plurality of protruding electrodes protruding toward the substrate, and a second electrode located below the first electrode and having a plurality of sockets into which the corresponding protruding electrodes are inserted. Each socket of the second electrode includes a first hole at its upper portion and a second hole at its lower portion facing the upper portion, into which one of the associated protruding electrodes is inserted. The first hole has a first opening, and the second hole has a second opening. The area of ​​the first opening at the center of the second electrode is different from the area of ​​the first opening at the edge of the second electrode.

[0008] In another embodiment, a substrate processing device is provided, including: a processing chamber configured to provide a reaction space for processing a substrate; a substrate support configured to support a substrate; a first injection plate installed in the processing chamber to face the substrate, and having a first gas injection hole and a plurality of protruding nozzles protruding toward the substrate therein; and a second injection plate located below the first injection plate, and having a plurality of second gas injection holes into which corresponding protruding nozzles are inserted and through which a second gas is injected. Each second gas injection hole of the second injection plate includes a first hole at its upper portion and a second hole at its lower portion facing the upper portion, and one of the associated protruding nozzles is inserted into the first hole. The first hole has a first opening, and the second hole has a second opening. The area of ​​the first opening at the center of the second injection plate is different from the area of ​​the first opening at the edge of the second injection plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present disclosure.

[0010] Figure 2 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Figure 1 An enlarged view of the first example of portion "A".

[0011] Figure 3 yes Figure 2 An enlarged view of portion "C".

[0012] Figure 4 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Figure 1 An enlarged view of a second example of portion “A”.

[0013] Figure 5 yes Figure 4 An enlarged view of portion "D" of FIG.

[0014] Figure 6FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Figure 1 An enlarged view of the third example of portion "A".

[0015] Figure 7 yes Figure 6 An enlarged view of portion "E".

[0016] Figure 8 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Figure 1 An enlarged view of portion "A" of the fourth example.

[0017] Fig. 9 is a cross-sectional view showing a substrate processing apparatus according to another embodiment of the present disclosure.

[0018] Fig.10 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Fig. 9 An enlarged view of the first example of portion "A".

[0019] Fig.11 yes Fig.10 An enlarged view of portion "C".

[0020] Fig.12 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Fig. 9 An enlarged view of a second example of portion “A”.

[0021] Fig.13 yes Fig.12 An enlarged view of portion "D" of FIG.

[0022] Fig.14 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Fig. 9 An enlarged view of the third example of portion "A".

[0023] Fig.15 yes Fig.14 An enlarged view of portion "E".

[0024] Fig.16 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Fig. 9 An enlarged view of portion "A" of the fourth example. DETAILED DESCRIPTION

[0025] Exemplary embodiments will be described in more detail below with reference to the accompanying drawings. However, the present disclosure may be embodied in different forms and should not be constructed to be limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art. Throughout the present disclosure, throughout the various figures and embodiments of the present disclosure, the same reference numerals refer to the same parts.

[0026] Figure 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present disclosure.

[0027] like Figure 1 As shown, the substrate processing apparatus designated by reference numeral 100 according to an embodiment of the present disclosure includes a processing chamber 110, a substrate support 120, a chamber cover 130, and an electrode module 140, wherein the electrode module 140 includes a first electrode 141 and a second electrode 142 facing the substrate support.

[0028] The processing chamber 110 provides a reaction space 101 for processing a substrate. A bottom located at one side of the processing chamber 110 may communicate with an exhaust port (not shown) for exhausting gas from the reaction space 101.

[0029] The substrate support 120 is installed inside the process chamber 110 and supports a plurality of substrates S or a single large-area substrate S. The substrate support 120 is supported by a support shaft (not shown) passing through the center bottom of the process chamber 110. The support shaft exposed to the outside from the lower surface of the process chamber 110 is sealed by a bellows (not shown) installed on the lower surface of the process chamber 110. The substrate support 120 may be lifted or lowered by a driving unit (not shown), and may also be rotated by driving the driving unit in some cases.

[0030] The chamber cover 130 is installed to cover the upper portion of the process chamber 110 to seal the reaction space 101. The chamber cover 130 supports an electrode module 140 including a first electrode 141 as an upper electrode and a second electrode 142 as a lower electrode, and the electrode module 140 is inserted into the chamber cover 130 and detachably coupled to the chamber cover 130.

[0031] The chamber cover 130 may be provided with a first gas supply unit (not shown) and a second gas supply unit (not shown) on an upper surface thereof to supply the first gas and the second gas to the electrode module 140 in the process chamber 110 .

[0032] The first gas supply unit (not shown) supplies the reaction gas as the first gas to the electrode module 140 through the first gas supply pipe 151. The reaction gas refers to a gas used for plasma formation or for secondary reaction. For example, the reaction gas may include hydrogen (H2), nitrogen (N2), oxygen (O2), nitrogen dioxide (N2O), ammonia (NH3), water (H2O), ozone (O3), etc.

[0033] The second gas supply unit (not shown) supplies the source gas as the second gas to the gas injection module 140 through the second gas supply pipe 152. The source gas refers to a gas containing a main component of a thin film to be formed. For example, the source gas may be a gas containing silicon (Si), a titanium group element (e.g., Ti, Zr, or Hf), aluminum (Al), etc.

[0034] A plasma power supply (not shown) for supplying plasma power may be installed outside the process chamber 110 .

[0035] The first electrode 141 and the second electrode 42 of the electrode module 140 may be detachably coupled to an upper portion of the process chamber so as to face the substrate support 120 .

[0036] The first electrode 141 may have a structure such as a polygonal flat plate or a circular plate. The first electrode 141 may include a plurality of integrated or separate protruding electrodes 141 a , and the protruding electrodes 141 a may be connected to the first electrode 141 to have the same voltage as the first electrode 141 .

[0037] The second electrode 142 may have a structure such as a polygonal flat plate or a circular plate. The second electrode 142 may be installed in the process chamber and have a plurality of insertion holes 142a formed to allow the corresponding protruding electrodes 141a to pass therethrough.

[0038] Figure 2 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Figure 1 An enlarged view of the first example of portion "A". Figure 3 yes Figure 2 An enlarged view of portion "C".

[0039] refer to Figure 2 and Figure 3 , each insertion hole 142a in the substrate processing device according to the embodiment of the present disclosure includes: a first hole 142a1 at its upper part and a second hole 142a2 at its lower part facing the upper part, and one of the associated protruding electrodes is inserted into the first hole 142a1. The first hole 142a1 has a first opening, and the second hole 142a2 has a second opening. In this case, it can be seen that the first opening area Di, which is the opening area of ​​the first opening, is different from the second opening area Do, which is the opening area of ​​the second opening.

[0040] Meanwhile, the first opening area Di may be implemented differently for each region.

[0041] That is to say, Figure 2 As shown in FIG. 1 , the first opening area Di in the substrate processing apparatus according to the embodiment of the present disclosure may be implemented differently at the center of the second electrode 142, at the periphery of the center, and at the edge of the second electrode 142. The first opening area Di 1 at the center of the second electrode 142 may be smaller than the first opening areas Di 2, Di 3, ... at the periphery of the center of the second electrode and the first opening area Di n at the edge of the second electrode.

[0042] That is, the first opening area Di increases from the center through the periphery toward the edge of the second electrode 142. Therefore, by increasing the size of the first opening area Di from the center toward the edge, the flow rate of the gas at the edge is slower than that at the center, thereby increasing the residence time of the gas in the reaction space and increasing the plasma density.

[0043] Each first opening area Di is an area of ​​the associated insertion hole 142 a passing through the upper surface of the second electrode 142 , and each second opening area Do is an area of ​​the associated insertion hole 142 a passing through the lower surface of the second electrode 142 .

[0044] Meanwhile, in the substrate processing apparatus according to the embodiment of the present disclosure, the first example of the insertion hole 142a may include: a first region having a first height H1 and a first opening, and a second region having a second height H2 and a second opening, the first region and the second region being oriented from the upper portion toward the lower portion of the insertion hole in the insertion direction of the protruding electrode. The first region is a region corresponding to the first hole 142a1, and the second region is a region corresponding to the second hole 142a2. The first region and the first hole will be designated by the same reference numerals, and the second region and the second hole will be designated by the same reference numerals.

[0045] According to the first example, the first region 142a1 corresponds to the upper portion of the insertion hole 142a. The first region has a first opening area Di in the vertical direction (Z-axis direction) and is located above the second region 142a2. The first region 142a1 may be formed so that its upper end passes through the upper surface of the second electrode 142 and its lower end is connected to the second region 142a2.

[0046] According to the first example, the second region 142a2 corresponds to the lower portion of the insertion hole 142a. The second region 142a2 has a second opening area Do2 in the vertical direction and is located below the first region 142a1. The second region 142a2 has an upper end connected to the first region 142a1 and a lower end passing through the lower surface of the second electrode 142.

[0047] That is, in the substrate processing apparatus according to the embodiment of the present disclosure, the insertion hole 142a of the first example includes: a first area 142a1 having a first height H1 and a first opening area Di 1 and a second area 142a2 having a second height H2 and a second opening area Do 1, and the second height H2 and the second opening area Do 1 are greater than the first height H1 and the first opening area Di 1. Therefore, since the gas leaving the first hole as the first area 142a1 diffuses in the second hole as the second area 142a2, the flow rate of the gas is reduced, and the residence time of the gas in the reaction space is therefore longer.

[0048] In this case, the first height H1 is preferably smaller than the second height H2. Therefore, the effect of reducing the flow rate of the gas can be obtained by increasing the area where the gas leaving the first area 142a1 is diffused.

[0049] Figure 4 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Figure 1 An enlarged view of a second example of portion “A”. Figure 5 yes Figure 4 An enlarged view of portion "D" of FIG.

[0050] Figure 4 and Figure 5 The second example of the substrate processing apparatus according to the embodiment of the present disclosure is shown in Figure 2 and Figure 3 The first example of the substrate processing apparatus according to the embodiment of the present disclosure shown in FIG. 1 is different in that each insertion hole 142 a has a tapered lower opening.

[0051] In the substrate processing apparatus according to the embodiment of the present disclosure, the second example insertion hole 142a may include a first region 142a1 having a first height H1, a second region 142a2 having a second height H2, and a fourth region 142a4 having a fourth height H4.

[0052] According to the second example, the first region 142a1 corresponds to the upper portion of the insertion hole 142a. The first region 142a1 has a first opening area Di in the vertical direction and is located above the second region 142a2. The first region 142a1 may be formed so that its upper end passes through the upper surface of the second electrode 142 and its lower end is connected to the second region 142a2.

[0053] The second region 142a2 is located below the first region 142a1. The second region 142a2 may be formed such that its upper end is connected to the lower portion of the first region 142a1 and its lower end is connected to the fourth region 142a4. The second region 142a2 has a second opening area Do at both its upper and lower ends in the vertical direction.

[0054] The fourth region 142a4 is located below the second region 142a2. The fourth region 142a4 has a second opening area Do 1 at its upper end and a third opening area Dout 1 at its lower end in the vertical direction. The upper end of the fourth region 142a4 is connected to the second region 142a2, and the lower end of the fourth region 142a4 passes through the lower surface of the second electrode 142.

[0055] like Figure 5 As shown in, in the second example of the substrate processing device according to the embodiment of the present disclosure, it can be seen that the first opening area Di1 which is the upper opening area of ​​the hole 142a, the second opening area Do2 which is the middle opening area of ​​the hole 142a, and the third opening area Dout1 which is the lower opening area of ​​the hole 142a are different from each other.

[0056] When the third opening area Dout1 is larger than the second opening area Do1, the gas leaving the first region 142a1 and the second region 142a2 diffuses in the fourth region 142a4 in a larger amount compared to the first example of the present disclosure. Therefore, the flow rate of the gas is reduced, and the residence time of the gas in the reaction space is thus longer.

[0057] Figure 6 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Figure 1 An enlarged view of the third example of portion "A". Figure 7 yes Figure 6 An enlarged view of portion "E".

[0058] Figure 6 and Figure 7 The third example of the substrate processing apparatus according to the embodiment of the present disclosure is shown in Figure 2 and Figure 3 The first example of the substrate processing apparatus according to the embodiment of the present disclosure shown in FIG. 1 is different in that each insertion hole 142 a has a tapered middle portion.

[0059] In the substrate processing apparatus according to the embodiment of the present disclosure, the third example insertion hole 142a may include a first region 142a1 having a first height H1, a second region 142a2 having a second height H2, and a third region 142a3 having a third height H3.

[0060] According to the third example, the first region 142a1 corresponds to the upper portion of the insertion hole 142a The first region 142a1 has a first opening area Di in the vertical direction and has an upper end passing through the upper surface of the second electrode 142 .

[0061] According to the third example, the second region 142a2 corresponds to the lower portion of the insertion hole 142a. The second region 142a2 has a second opening area Do in the vertical direction and passes through the lower surface of the second electrode 142.

[0062] The third region 142a3 is located between the first region 142a1 and the second region 142a2 and may be tapered in the vertical direction. The third region 142a3 has a first opening area Di at its upper end and a second opening area Do at its lower end in the vertical direction.

[0063] In the third example of the substrate processing apparatus according to the embodiment of the present disclosure, due to the above structure, the gas diffuses when entering the third area 142a3 from the first area 142a1. Therefore, the gas diffuses additionally when flowing through the third area 142a3 and the second area 142a2 at a reduced flow rate. Therefore, compared with the plug hole 142a according to the first example, the plug hole 142a according to the third example of the present disclosure enables the flow rate of the gas to be further reduced, thereby achieving the effect of further extending the residence time of the gas and further increasing the plasma density.

[0064] Figure 8 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Figure 1 An enlarged view of portion "A" of the fourth example.

[0065] refer to Figure 8 In the fourth example of the substrate processing apparatus according to the embodiment of the present disclosure, it can be seen that the second electrode 142 has an upper surface parallel to the first electrode 142 and a dome lower surface concave at the center thereof. Because the second electrode 142 has the dome lower surface, so that the second height H2 at the center of the second electrode 142 is lower than the second height H2 at the edge of the second electrode 142, the distance between the second electrode 142 and the substrate support 120 decreases from the center toward the edge of the second electrode 142.

[0066] Therefore, the plasma density decreases at the center of the second electrode and increases at the edge thereof. Therefore, a uniform thin film can be formed on the substrate in a large-area substrate processing apparatus.

[0067] Alternatively, the lower surface of the second electrode 142 may have a stepped shape instead of a concave dome shape. In this case, the lower surface at the center of the second electrode 142 and the lower surface at the edge of the second electrode 142 preferably have a height difference Hd of 5 mm to 10 mm.

[0068] As described above, the substrate processing apparatus according to an embodiment of the present disclosure is advantageous because the efficiency in the substrate processing process can be enhanced by reducing the flow rate and increasing the residence time and plasma density of the gas in the process of supplying gas by forming the shape of an electrode unit including a first electrode and a second electrode.

[0069] Fig. 9 is a cross-sectional view showing a substrate processing apparatus according to another embodiment of the present disclosure.

[0070] like Fig. 9 As illustrated in the figure, a substrate processing device designated by reference numeral 900 according to another embodiment of the present disclosure includes: a processing chamber 910, a substrate support 920, a chamber cover 130 and a gas injection module 940, and the gas injection module 940 includes a first injection plate 941 and a second injection plate 942 facing the substrate support.

[0071] The processing chamber 910 provides a reaction space 901 for processing a substrate. A bottom located at one side of the processing chamber 910 may communicate with an exhaust port (not shown) for exhausting gas from the reaction space 901.

[0072] The substrate support 920 is installed inside the processing chamber 910 and supports a plurality of substrates S or a single large-area substrate S. The substrate support 920 is supported by a support shaft (not shown) passing through the center bottom of the processing chamber 910. The support shaft exposed to the outside from the lower surface of the processing chamber 910 is sealed by a bellows (not shown) installed on the lower surface of the processing chamber 910. The substrate support 920 can be lifted or lowered by a driving unit (not shown), and the substrate support 920 can also be rotated by driving the driving unit in some cases.

[0073] The chamber cover 930 is installed to cover the upper portion of the process chamber 910 to seal the reaction space 901. The chamber cover 930 supports a gas injection module 940 including a first injection plate 941 for injecting a first gas and a second injection plate 942 for injecting a second gas, and the gas injection module 940 is inserted into the chamber cover 930 and detachably coupled to the chamber cover 930.

[0074] The chamber cover 930 may be provided with a first gas supply unit (not shown) and a second gas supply unit (not shown) on an upper surface thereof to supply the first gas and the second gas to the gas injection module 940 within the process chamber 910 .

[0075] The first gas supply unit (not shown) supplies the reaction gas as the first gas to the gas injection module 940 through the first gas supply pipe 951. The reaction gas refers to a gas used for plasma formation or for secondary reaction. For example, the reaction gas may include hydrogen (H2), nitrogen (N2), oxygen (O2), nitrogen dioxide (N2O), ammonia (NH3), water (H2O), ozone (O3), etc.

[0076] The second gas supply unit (not shown) supplies the source gas as the second gas to the gas injection module 940 through the second gas supply pipe 952. The source gas refers to a gas containing a main component of a thin film to be formed. For example, the source gas may be a gas containing silicon (Si), a titanium group element (e.g., Ti, Zr, or Hf), aluminum (Al), etc.

[0077] A plasma power supply (not shown) for supplying plasma power may be installed outside the process chamber 910 .

[0078] The first injection plate 941 and the second injection plate 941 of the gas injection module 940 may be detachably coupled to an upper portion of the process chamber so as to face the substrate support 920 .

[0079] The first injection plate 941 injects the first gas into the reaction space, and the second injection plate 942 injects the second gas into the reaction space.

[0080] The first spray plate 941 is installed in the process chamber, and includes a plurality of protrusion nozzles 941 a protruding toward the substrate S. As shown in FIG.

[0081] The respective protruding nozzles 941 a of the first injection plate 941 may be formed with a plurality of first gas injection holes 941 b so that the first gas supplied from the first gas supply unit (not shown) through the first gas supply pipe 951 may be injected to the substrate S.

[0082] In this case, the first gas may be sprayed to the substrate S, or may be sprayed between the protrusion nozzle 941 a and the first gas spray hole 141 b according to the length of each protrusion nozzle 941 a .

[0083] The first injection plate 941 may have a structure such as a polygonal flat plate or a circular plate. The protruding nozzle 941a may be integrated with or separated from the first injection plate 941 and may be connected to the first injection plate 941 to have the same voltage as the first injection plate 941.

[0084] The second injection plate 942 may be formed with a plurality of second gas injection holes 942 a so that the second gas supplied through the second gas supply pipe 952 may be injected to the substrate S. As shown in FIG.

[0085] The second injection plate 942 may have a structure such as a polygonal flat plate or a circular plate. The second injection plate 942 may be installed in the process chamber and have a plurality of second gas injection holes 942a formed to allow corresponding protruding nozzles 941a to pass therethrough.

[0086] Fig.10 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Fig. 9 An enlarged view of the first example of portion "A". Fig.11 yes Fig.10 An enlarged view of portion "C".

[0087] refer to Fig. 9 and 11 In the substrate processing apparatus 900 according to the embodiment of the present disclosure, it can be seen that the first opening area Di1 which is the upper opening area of ​​each second gas injection hole 942a is different from the second opening area Do1 which is the lower opening area of ​​the second gas injection hole 942a.

[0088] Meanwhile, the first opening area Di may be implemented differently for each region.

[0089] That is to say, Fig.10 As shown in FIG. 1 , the first opening area Di in the substrate processing apparatus 900 according to the embodiment of the present disclosure may be implemented differently at the center of the second injection plate 942, at the periphery of the center, and at the edge of the second injection plate 942. The first opening area Di1 at the center of the second injection plate 942 may be smaller than the first opening areas Di2, Di3, ... at the periphery of the center of the second injection plate 942 and the first opening area Din at the edge of the second injection plate 942.

[0090] That is, the first opening area Di increases from the center of the second injection plate 942 through the periphery toward the edge. Therefore, by increasing the size of the first opening area Di from the center toward the edge, the flow rate of the gas at the edge is slower than that at the center, thereby increasing the residence time of the gas in the reaction space and increasing the plasma density.

[0091] Each first opening area Di 1 is an area of ​​an associated second gas injection hole 142 a through the upper surface of the second injection plate 942 , and each second opening area Do 1 is an area of ​​an associated second gas injection hole 942 a through the lower surface of the second injection plate 942 .

[0092] In the substrate processing apparatus according to the embodiment of the present disclosure, the second gas injection hole 942a may include a first region 942a1 having a first height H1 and a second region 942a2 having a second height H2 in the direction of insertion of the protruding nozzle 941a. The first region is a region corresponding to the first hole 942a1, and the second region is a region corresponding to the second hole 942a2. The first region and the first hole will be designated by the same reference numerals, and the second region and the second hole will be designated by the same reference numerals.

[0093] The first region 942a1 corresponds to the upper portion of the second gas injection hole 942a. The first region 942a1 has a first opening area Di 1 in the vertical direction (Z-axis direction) and is located above the second region 942a2. The first region 942a1 may be formed such that its upper end passes through the upper surface of the second injection plate 942 and its lower end is connected to the second region 942a2.

[0094] The second region 942a2 corresponds to the lower portion of the second gas injection hole 942a. The second region 942a2 has a second opening area Do 2 in the vertical direction and is located below the first region 942a1. The second region 942a2 has an upper end connected to the first region 942a1 and a lower end passing through the lower surface of the second injection plate 942.

[0095] That is, in the substrate processing apparatus according to the embodiment of the present disclosure, the second gas injection hole 942a includes: a first region 942a1 having a first height H1 and a first opening area Di 1 and a second region 942a2 having a second height H2 and a second opening area Do 1, and the second height H2 and the second opening area Do 1 are greater than the first height H1 and the first opening area Di 1. Therefore, since the gas leaving the first region 942a1 is diffused in the second region 942a2, the flow rate of the gas is reduced, and the residence time of the gas in the reaction space is thus longer.

[0096] In this case, the first height H1 is preferably smaller than the second height H2. Therefore, the effect of reducing the flow rate of the gas can be obtained by increasing the area where the gas leaving the first area 942a1 is diffused.

[0097] Fig.12 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Fig. 9 An enlarged view of a second example of portion “A”. Fig.13 yes Fig.12 An enlarged view of portion "D" of FIG.

[0098] Fig.12 and Fig.13 The second example of the substrate processing apparatus according to the embodiment of the present disclosure is shown in Fig.10 and Fig.11 The first example of the substrate processing apparatus according to the embodiment of the present disclosure shown in FIG. 8 is different in that each of the second gas injection holes 942 a has a tapered lower opening.

[0099] In the substrate processing apparatus according to the embodiment of the present disclosure, the second gas injection hole 942a of the second example may include a first region 942a1 having a first height H1, a second region 942a2 having a second height H2, and a fourth region 942a4 having a fourth height H4.

[0100] According to the second example, the first region 942a1 corresponds to the upper portion of the second gas injection hole 942a. The first region 942a1 has a first opening area Di in the vertical direction and is located above the second region 942a2. The first region 942a1 may be formed such that its upper end passes through the upper surface of the second injection plate 942 and its lower end is connected to the second region 942a2.

[0101] The second region 942a2 is located below the first region 942a1. The second region 942a2 may be formed such that its upper end is connected to the lower portion of the first region 942a1 and its lower end is connected to the fourth region 942a4. The second region 942a2 has a second opening area Do at both its upper and lower ends in the vertical direction.

[0102] The fourth region 942a4 is located below the second region 942a2. The fourth region 942a4 has a second opening area Do 1 at its upper end and a third opening area Dout 1 at its lower end in the vertical direction. The upper end of the fourth region 942a4 is connected to the second region 942a2, and the lower end of the fourth region 942a4 passes through the lower surface of the second injection plate 942.

[0103] like Fig.13 As shown in, in the second example of the substrate processing device according to the embodiment of the present disclosure, it can be seen that the first opening area Di1 which is the upper opening area of ​​the second gas injection hole 942a, the second opening area Do2 which is the middle opening area of ​​the second gas injection hole 942a, and the third opening area Dout1 which is the lower opening area of ​​the second gas injection hole 942a are different from each other.

[0104] When the third opening area Dout1 is larger than the second opening area Do1, the gas leaving the first region 942a1 and the second region 942a2 diffuses in the fourth region 942a4 in a larger amount compared to the first example of the present disclosure. Therefore, the flow rate of the gas is reduced, and the residence time of the gas in the reaction space is thus longer.

[0105] Fig.14FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Fig. 9 An enlarged view of the third example of portion "A". Fig.15 yes Fig.14 An enlarged view of portion "E".

[0106] Fig.14 and Fig.15 The third example of the substrate processing apparatus according to the embodiment of the present disclosure is shown in Fig.10 and Fig.11 The first example of the substrate processing apparatus according to the embodiment of the present disclosure shown in FIG. 8 is different in that each of the second gas injection holes 942 a has a tapered middle portion.

[0107] In the substrate processing apparatus according to the embodiment of the present disclosure, the second gas injection hole 942a of the third example may include a first region 942a1 having a first height H1, a second region 942a2 having a second height H2, and a third region 942a3 having a third height H3.

[0108] According to the third example, the first region 942a1 corresponds to the upper portion of the second gas injection hole 942a The first region 942a1 has a first opening area Di in the vertical direction and has an upper end passing through the upper surface of the second injection plate 942 .

[0109] According to the third example, the second region 942a2 corresponds to the lower portion of the second gas injection hole 942a The second region 942a2 has a second opening area Do in the vertical direction and passes through the lower surface of the second injection plate 942.

[0110] The third region 942a3 is located between the first region 942a1 and the second region 942a2 and may be tapered in the vertical direction. The third region 942a3 has a first opening area Di at its upper end and a second opening area Do at its lower end in the vertical direction.

[0111] In the third example of the substrate processing apparatus according to the embodiment of the present disclosure, due to the above structure, the gas diffuses when entering the third area 942a3 from the first area 942a1. Therefore, the gas diffuses additionally when flowing through the third area 942a3 and the second area 942a2 at a reduced flow rate. Therefore, compared with the second gas injection hole 942a according to the first example, the second gas injection hole 942a according to the third example of the present disclosure enables the flow rate of the gas to be further reduced, thereby achieving the effect of further extending the residence time of the gas and further increasing the plasma density.

[0112] Fig.16 FIG. 2 is a diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. Fig. 9An enlarged view of portion "A" of the fourth example.

[0113] refer to Fig.16 In the fourth example of the substrate processing apparatus according to the embodiment of the present disclosure, it can be seen that the second injection plate 942 has an upper surface parallel to the first injection plate 941 and a dome lower surface concave at the center thereof. Because the second injection plate 942 has the dome lower surface, so that the second height H2 at the center of the second injection plate 942 is lower than the second height H2 at the edge of the second injection plate 942, the distance between the second injection plate 942 and the substrate support 120 decreases from the center toward the edge of the second injection plate 942.

[0114] Therefore, the plasma density decreases at the center of the second injection plate and increases at the edge thereof. Therefore, a uniform thin film can be formed on the substrate in the large-area substrate processing apparatus.

[0115] Alternatively, the lower surface of the second injection plate 942 may have a stepped shape instead of a concave dome shape. In this case, the lower surface at the center of the second injection plate 942 and the lower surface at the edge of the second injection plate 942 preferably have a height difference Hd of 5 to 10 mm.

[0116] As described above, the substrate processing apparatus according to an embodiment of the present disclosure is advantageous because the efficiency in the substrate processing process can be enhanced by reducing the flow rate and increasing the residence time and plasma density of the gas in a process of supplying gas by forming the shape of a gas injection module including a first injection plate and a second injection plate.

[0117] As is apparent from the above description, the substrate processing apparatus according to the present disclosure is configured such that the second electrode as the lower electrode has a plug hole through which a gas is supplied, and the opening area of ​​the inlet of the plug hole gradually increases from the center toward the edge of the second electrode. Therefore, the substrate processing apparatus is advantageous because the flow rate of the gas decreases from the center toward the edge of the second electrode, and the residence time of the gas is thus increased, thereby extending the time required for thin film formation.

[0118] In addition, the substrate processing apparatus according to the present disclosure is configured so that the second electrode has a concave dome lower surface, and the distance between the second electrode and the substrate is shorter at the center than at the edge of the second electrode. Therefore, the substrate processing apparatus is advantageous because the plasma density decreases at the center of the second electrode and increases at its edge.

[0119] In general, the present disclosure is advantageous because it can enhance efficiency in a substrate treating process by increasing a flow rate and a residence time of a gas and a plasma density in a process of supplying the gas by forming a shape of an electrode unit.

[0120] In addition, the substrate processing apparatus according to the present disclosure is configured such that: the second gas injection hole into which the protruding nozzle of the first injection plate is inserted is formed to inject the second gas, and the opening area of ​​the inlet of the gas injection hole gradually increases from the center toward the edge of the second injection plate. Therefore, the substrate processing apparatus is advantageous because the flow rate of the gas leaving the first injection plate and the second injection plate decreases from the center toward the edge of the second injection plate, and the residence time of the gas is increased, thereby extending the time required for thin film formation.

[0121] Although various embodiments have been described above, those skilled in the art will appreciate that the described embodiments are only examples. Therefore, the present disclosure described herein should not be limited based on the described embodiments.

Claims

1. A substrate processing device, comprising: a processing chamber configured to provide a reaction space for processing a substrate; a substrate support configured to support the substrate; a first electrode installed in the process chamber to face the substrate and having a plurality of protruding electrodes protruding toward the substrate; as well as a second electrode located below the first electrode and having a plurality of insertion holes into which corresponding protruding electrodes are inserted, wherein: Each of the insertion holes of the second electrode comprises a first hole at an upper portion of the insertion hole and a second hole at a lower portion of the insertion hole facing the upper portion, the associated one of the protruding electrodes being inserted into the first hole; The first hole has a first opening, and the second hole has a second opening; Wherein, the jack comprises: a first region having a first height and the first opening from an upper portion of the insertion hole toward the lower portion; and a second region located below the first region and having a second height and the second opening, wherein the area of ​​the first opening is smaller than or equal to the area of ​​the second opening, An area of ​​the first opening at the center of the second electrode is smaller than an area of ​​the first opening at the edge of the second electrode, The area of ​​the second opening at the center of the second electrode is equal to the area of ​​the second opening at the edge of the second electrode.

2. The substrate processing apparatus according to claim 1, wherein: The first hole is configured such that an area of ​​the first opening increases from a center toward the edge of the second electrode.

3. The substrate processing apparatus according to claim 1, wherein: The receptacle includes a third region having a third height between the first region and the second region; and The third region is cone-shaped.

4. The substrate processing apparatus according to claim 1, wherein: The second height at the center of the second electrode is lower than the second height at the edge of the second electrode.

5. The substrate processing apparatus according to claim 1, wherein: The receptacle includes a fourth region below the second region having a fourth height and a third opening; and An area of ​​the third opening is equal to or larger than an area of ​​the second opening.

6. A substrate processing device, comprising: a processing chamber configured to provide a reaction space for processing a substrate; a substrate support configured to support the substrate; a first injection plate installed in the process chamber to face the substrate and having therein a first gas injection hole and a plurality of protruding nozzles protruding toward the substrate; as well as a second injection plate located below the first injection plate and having a plurality of second gas injection holes into which the corresponding protruding nozzles are inserted and through which the second gas is injected, wherein, each of the second gas injection holes of the second injection plate includes a first hole at an upper portion of the second gas injection hole and a second hole at a lower portion of the second gas injection hole facing the upper portion, and an associated one of the protruding nozzles is inserted into the first hole; The first hole has a first opening, and the second hole has a second opening; Wherein, the second gas injection hole comprises: a first region having a first height and the first opening from an upper portion toward the lower portion of the second gas injection hole; and a second region located below the first region and having a second height and the second opening; wherein the area of ​​the first opening is smaller than or equal to the area of ​​the second opening, An area of ​​the first opening at the center of the second injection plate is smaller than an area of ​​the first opening at the edge of the second injection plate, Wherein, an area of ​​the second opening at the center of the second injection plate is equal to an area of ​​the second opening at the edge of the second injection plate.

7. The substrate processing apparatus according to claim 6, wherein: The first holes are configured such that an area of ​​the first opening increases from a center toward an edge of the second injection plate.

8. The substrate processing apparatus according to claim 6, wherein: The second gas injection hole includes a third region having a third height between the first region and the second region; and The third region is cone-shaped.

9. The substrate processing apparatus according to claim 6, wherein: The second height at the center of the second injection plate is lower than the second height at the edge of the second injection plate.

10. The substrate processing apparatus according to claim 6, wherein: The second gas injection hole includes a fourth region having a fourth height and a third opening below the second region; and An area of ​​the third opening is equal to or larger than an area of ​​the second opening.

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