Substrate processing apparatus and substrate processing method

Abstract

This invention provides a substrate processing apparatus and a substrate processing method capable of easily confirming the state of the openings of a bubble supply pipe. The substrate processing apparatus (100B) includes a processing tank (110), a bubble supply pipe (180A), a gas supply pipe (261A), a physical quantity detection unit (253A), and a determination unit (12). The processing tank (110) stores a processing liquid (LQ) and impregnates a substrate (W). The bubble supply pipe (180A) has multiple openings (G) for supplying gas to the processing liquid (LQ) to form bubbles. The gas supply pipe (261A) supplies gas to the bubble supply pipe (180A). The physical quantity detection unit (253A) detects physical quantities caused by the state of the bubble supply pipe (180A) through the gas supply pipe (261A). The determination unit (12) determines the state of the multiple openings (G) based on the physical quantities.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] It is known that substrates used in electronic components such as semiconductor devices and liquid crystal display devices are processed by substrate processing apparatus. The substrate is processed by immersing it in a processing liquid in a processing tank (for example, see Patent Document 1).

[0003] In recent years, with the miniaturization or three-dimensionalization of components formed on semiconductor substrates, the demand for uniform substrate processing has increased. For example, NAND devices with three-dimensional structures include stacked structures with three-dimensional bump and recess structures. When processing liquid remains in the recesses of the bump and recess structure of the component pattern, liquid replacement within the recesses becomes insufficient. Therefore, as a method to promote sufficient liquid replacement of the entire substrate including the recesses, a technique is to arrange a bubble generator (bubble supply pipe) below the substrate immersed in the processing tank, and generate bubbles from the bubble generator to promote liquid replacement within the processing tank.

[0004] Patent Document 1 describes an application example of such a bubble generator. In the substrate processing apparatus of Patent Document 1, when a substrate is immersed in a processing tank containing an aqueous phosphoric acid solution and processed, bubbles are generated from a bubble generator disposed below the substrate immersed in the processing tank. The bubble generator is cylindrical and has a plurality of nozzles (a plurality of openings). One end of the bubble generator is connected to a gas supply pipe for supplying mixed gas to the bubble generator. Furthermore, the bubble generator generates bubbles of mixed gas in the aqueous phosphoric acid solution by blowing mixed gas from each nozzle.

[0005] The generated bubbles rise in the gaps between multiple substrates placed in the processing tank, circulating the phosphoric acid aqueous solution. This circulation promotes liquid displacement around the element patterns formed on the substrates.

[0006] Patent Document 1: Japanese Patent Application Publication No. 2018-56258.

[0007] As a result of phosphoric acid treatment of the substrate, components that dissolve into the phosphoric acid aqueous solution may also precipitate into the bubble generator.

[0008] When dissolved components are deposited at the nozzle of the bubble generator, clogging may occur, causing variations in the particle shape, distribution, and rising velocity of the supplied bubbles. This can affect the uniformity of the substrate processing. Therefore, the phosphoric acid aqueous solution is periodically drained from the processing tank, and the condition of the openings is visually checked. However, checking the opening condition requires time and effort. Summary of the Invention

[0009] The present invention was made in view of the above-mentioned problems, and its object is to provide a substrate processing apparatus and a substrate processing method that can easily confirm the opening state of the bubble supply tube.

[0010] According to one aspect of the present invention, a substrate processing apparatus includes a processing tank, a bubble supply pipe, a gas supply pipe, a physical quantity detection unit, and a determination unit. The processing tank stores a processing liquid and impregnates a substrate. The bubble supply pipe has a plurality of openings for supplying gas to the processing liquid to form bubbles. The gas supply pipe supplies the gas to the bubble supply pipe. The physical quantity detection unit detects a physical quantity caused by the state of the bubble supply pipe through the gas supply pipe. The determination unit determines the state of the plurality of openings based on the physical quantity.

[0011] In the substrate processing apparatus of the present invention, it is preferable that the determination unit compares the physical quantity detected at a first time, i.e., the reference physical quantity, with the physical quantity detected at a second time, i.e., the detected physical quantity, to determine the state of the plurality of openings, wherein the first time and the second time are different.

[0012] In the substrate processing apparatus of the present invention, the first time preferably represents the time before processing the substrate, the second time represents the time after processing the substrate, and the determination unit determines whether the state of the plurality of openings is abnormal based on the difference between the reference physical quantity and the detected physical quantity.

[0013] In the substrate processing apparatus of the present invention, it is preferable that the physical quantity detection unit includes a pressure gauge for detecting the pressure in the gas supply pipe, wherein the physical quantity represents the pressure in the gas supply pipe.

[0014] In the substrate processing apparatus of the present invention, it is preferable to further include a flow control unit, which supplies a first flow rate of gas to the gas supply pipe when processing the substrate, and the determination unit determines the state of the plurality of openings based on the pressure in the gas supply pipe when a second flow rate of gas is supplied to the gas supply pipe, wherein the second flow rate is greater than the first flow rate.

[0015] In the substrate processing apparatus of the present invention, the physical quantity detection unit preferably includes a regulating valve for controlling the flow rate of the gas supplied to the gas supply pipe, wherein the physical quantity represents the opening degree of the regulating valve.

[0016] In the substrate processing apparatus of the present invention, it is preferable that the regulating valve supplies gas at a first flow rate to the gas supply pipe when processing the substrate, and the determination unit determines the state of the plurality of openings based on the opening degree when the gas at the first flow rate is supplied to the gas supply pipe.

[0017] In the substrate processing apparatus of the present invention, the physical quantity detection unit preferably includes a pressure gauge for detecting the pressure in the gas supply pipe and a regulating valve for controlling the flow rate of the gas supplied to the gas supply pipe; the physical quantity represents the pressure in the gas supply pipe and the opening degree of the regulating valve; the regulating valve supplies the gas to the gas supply pipe at a first flow rate when processing the substrate; the determination unit determines the state of the plurality of openings based on the opening degree when the gas at the first flow rate is supplied to the gas supply pipe, and determines the state of the plurality of openings based on the pressure in the gas supply pipe when a second flow rate of gas, which is greater than the first flow rate, is supplied to the gas supply pipe.

[0018] According to another aspect of the present invention, a substrate processing method is a substrate processing method for processing a substrate using a processing liquid, comprising: a step of supplying gas to a bubble supply pipe having a plurality of openings via a gas supply pipe, and supplying the gas to the processing liquid to form bubbles; a step of detecting a physical quantity caused by the state of the bubble supply pipe via the gas supply pipe; and a step of determining the state of the plurality of openings based on the physical quantity.

[0019] In the substrate processing method of the present invention, it is preferable that in the step of determining the state, the state of the plurality of openings is determined by comparing the physical quantity detected at a first time, i.e., the reference physical quantity, with the physical quantity detected at a second time, i.e., the detected physical quantity. The first time and the second time are different.

[0020] In the substrate processing method of the present invention, the first time preferably represents the time before processing the substrate, and the second time represents the time after processing the substrate. In the process of determining the state, the state of the plurality of openings is determined to be abnormal based on the difference between the reference physical quantity and the detected physical quantity.

[0021] In the substrate processing method of the present invention, the physical quantity preferably represents the pressure in the gas supply pipe.

[0022] In the substrate processing method of the present invention, it is preferable that, in the step of supplying the gas, when processing the substrate, the gas is supplied to the gas supply pipe at a first flow rate; and when determining the state of the plurality of openings, the gas is supplied to the gas supply pipe at a second flow rate; wherein the second flow rate is greater than the first flow rate.

[0023] In the substrate processing method of the present invention, it is preferable that in the process of supplying the gas, a regulating valve is used to control the flow rate of the gas supplied to the gas supply pipe, wherein the physical quantity represents the opening degree of the regulating valve.

[0024] In the substrate processing method of the present invention, it is preferable that, in the step of supplying the gas, when processing the substrate, the gas is supplied to the gas supply pipe at a first flow rate; and when determining the state of the plurality of openings, the gas is supplied to the gas supply pipe at the first flow rate.

[0025] In the substrate processing method of the present invention, the physical quantity preferably represents the pressure in the gas supply pipe and the opening degree of the regulating valve; in the step of determining the state, the state of the plurality of openings is determined based on the opening degree when the gas with a first flow rate is supplied to the gas supply pipe, and the state of the plurality of openings is determined based on the pressure in the gas supply pipe when the gas with a second flow rate greater than the first flow rate is supplied to the gas supply pipe.

[0026] Invention Effects

[0027] According to the present invention, the state of the opening of the bubble supply tube can be easily confirmed. Attached Figure Description

[0028] Figure 1A This is a diagram showing the state of the substrate of Embodiment 1 of the present invention before it is immersed in the processing liquid. Figure 1B This is a diagram showing the state of the substrate of Embodiment 1 after it has been immersed in the processing solution.

[0029] Figure 2 This is a schematic diagram showing the substrate processing apparatus of Embodiment 1.

[0030] Figure 3 This diagram shows the state of the substrate processing apparatus performing the determination process in Embodiment 1.

[0031] Figure 4 It is a graph showing the relationship between the flow rate of gas supplied to the bubble supply pipe of Embodiment 1 and the difference between the reference pressure and the detection pressure.

[0032] Figure 5 It is a graph showing the relationship between the flow rate of gas supplied to the bubble supply pipe of Embodiment 1 and the difference between the reference pressure and the detection pressure.

[0033] Figure 6 This is a flowchart illustrating the substrate processing method of Embodiment 1.

[0034] Figure 7 This is a diagram showing the substrate processing apparatus of Embodiment 1.

[0035] Figure 8 This is a schematic top view showing multiple circulating treatment liquid supply components and multiple bubble supply pipes in Embodiment 1.

[0036] Figure 9This diagram shows the state of the substrate processing apparatus performing the determination process in Embodiment 1.

[0037] Figure 10 This diagram illustrates the state of the substrate processing apparatus performing the determination process according to Embodiment 2 of the present invention.

[0038] Figure 11 It is a graph showing the relationship between the flow rate of the gas supplied to the bubble supply pipe of Embodiment 2 and the absolute difference between the reference opening and the detection opening.

[0039] Figure 12 This is a flowchart illustrating the substrate processing method of Embodiment 2.

[0040] Figure 13 This is a flowchart illustrating the substrate processing method according to Embodiment 3 of the present invention.

[0041] Figure 14 This is a flowchart illustrating the substrate processing method of Embodiment 3.

[0042] Explanation of reference numerals in the attached figures

[0043] 12 Judgment Department

[0044] 100B Substrate Processing Apparatus

[0045] 110 processing tank

[0046] 180A Bubble Supply Pipe

[0047] 253A Pressure Gauge (Physical Quantity Measurement Department)

[0048] 261A Gas Supply Pipe

[0049] G. Bubble supply orifice (opening)

[0050] LQ treatment fluid

[0051] W substrate Detailed Implementation

[0052] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. It should be noted that in the drawings, the same or equivalent parts are labeled with the same reference numerals and will not be described repeatedly. Furthermore, in the embodiments of the present invention, the X-axis, Y-axis, and Z-axis are orthogonal to each other, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[0053] <Implementation Method 1>

[0054] Reference Figure 1A , Figure 1B This section describes the substrate processing apparatus 100A and substrate processing method according to Embodiment 1 of the present invention. First, refer to... Figure 1A , Figure 1B Description of substrate processing apparatus 100A. Figure 1A , Figure 1B This is a schematic perspective view showing the substrate processing apparatus 100A. Specifically, Figure 1A and Figure 1B This is a schematic perspective view of the substrate processing apparatus 100A before and after the substrate W is placed into the processing tank 110.

[0055] like Figure 1A and Figure 1B As shown, the substrate processing apparatus 100A processes multiple substrates W simultaneously using the processing liquid LQ. It should be noted that the substrate processing apparatus 100A can process many substrates W using the processing liquid LQ in a manner that processes a predetermined number of substrates W each time. The predetermined number is an integer greater than or equal to 1.

[0056] The substrate W is a thin plate. Typically, the substrate W is a thin, roughly circular plate. Substrate W includes, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for plasma displays, substrates for field emission displays (FED), substrates for optical discs, substrates for magnetic disks, substrates for optical discs, substrates for photomasks, ceramic substrates, and substrates for solar cells.

[0057] The processing solution LQ is used to perform at least one of the following processes on multiple substrates W: etching, surface treatment, characterization, forming a processed film, removal of at least a portion of the film, and cleaning. For example, the substrate processing apparatus 100A performs an etching process on the patterned side surface of a substrate W made of a silicon substrate, using both a silicon oxide film (SiO2 film) and a silicon nitride film (SiN film). In such an etching process, either the silicon oxide film or the silicon nitride film is removed from the surface of the substrate W.

[0058] For example, the processing solution LQ is a chemical solution. Processing solution LQ is, for example, a mixture of phosphoric acid (H3PO4), mixed ammonia, hydrogen peroxide, and water, or tetramethylammonium hydroxide. For example, as processing solution LQ, when using a solution at approximately 157°C (hereinafter referred to as "phosphoric acid solution") prepared by mixing approximately 89% by mass of phosphoric acid (H3PO4) with approximately 11% by mass of water (deionized water), the silicon nitride film (SiN film) is removed from the surface of the substrate W. In other words, as processing solution LQ, a solution free of impurities and with high temperature and high acid concentration is used, and processing solution LQ dissolves silicon (SiN film). 4+ It should be noted that there are no particular restrictions on the type of processing solution LQ, as long as the substrate W can be processed. Furthermore, there are no particular restrictions on the temperature of the processing solution LQ.

[0059] Specifically, the substrate processing apparatus 100A includes a processing tank 110 and a substrate holding section 120.

[0060] The processing tank 110 stores the processing solution LQ. Specifically, the processing tank 110 stores the processing solution LQ. Specifically, the processing tank 110 has a dual-tank structure including an inner tank 112 and an outer tank 114. The inner tank 112 and the outer tank 114 each have an upward-opening upper opening. The inner tank 112 stores the processing solution LQ and can accommodate multiple substrates W. The outer tank 114 is disposed on the outer peripheral surface of the upper opening of the inner tank 112.

[0061] The substrate holding section 120 holds a plurality of substrates W. The plurality of substrates W are arranged in a row along a first direction D10 (Y direction). In other words, the first direction D10 represents the arrangement direction of the plurality of substrates W. The first direction D10 is substantially parallel to the horizontal direction. In addition, each of the plurality of substrates W is substantially parallel to a second direction D20. The second direction D20 is substantially orthogonal to the first direction D10 and substantially parallel to the horizontal direction.

[0062] Specifically, the substrate holding section 120 includes a lift mechanism. While holding a plurality of substrates W, the substrate holding section 120 moves vertically upward or downward. By moving the substrate holding section 120 vertically downward, the plurality of substrates W held by the substrate holding section 120 are immersed in the processing liquid LQ stored in the inner tank 112.

[0063] exist Figure 1A In this process tank 110, the substrate holding section 120 is located above the inner groove 112 of the processing tank 110. The substrate holding section 120 descends vertically downward (in the Z direction) while holding multiple substrates W. As a result, the multiple substrates W are placed into the processing tank 110.

[0064] like Figure 1B As shown, when the substrate holding section 120 descends into the processing tank 110, a plurality of substrates W are immersed in the processing liquid LQ within the processing tank 110. In Embodiment 1, the substrate holding section 120 immerses a plurality of substrates W arranged at predetermined intervals in the processing liquid LQ stored in the processing tank 110.

[0065] In detail, the substrate holding portion 120 further includes a main body plate 122 and a holding rod 124. The main body plate 122 is a plate extending in the vertical direction (Z direction). The holding rod 124 extends from a main surface of the main body plate 122 in the horizontal direction (Y direction). Figure 1A and Figure 1B In this example, three retaining rods 124 extend horizontally from one main surface of the main body plate 122. Multiple substrates W are arranged at predetermined intervals and held in an upright (vertical) position by the retaining rods 124 abutting against the lower edge of each substrate W.

[0066] The substrate holding portion 120 may further include a lifting unit 126. The lifting unit 126 positions the main body plate 122 in a processing position where the plurality of substrates W held on the substrate holding portion 120 are located within the inner groove 112. Figure 1B The positions shown are retracted above the inner groove 112 and the plurality of substrates W held on the substrate holding portion 120. Figure 1A The main body plate 122 is moved between the positions shown. Therefore, the main body plate 122 is moved to the processing position by the lifting unit 126, and the multiple substrates W held on the holding rod 124 are immersed in the processing liquid LQ.

[0067] Next, refer to Figure 2 Explanation of bubble supply pipe 180A and gas supply section 200. Figure 2 This is a schematic diagram showing the substrate processing apparatus 100A according to Embodiment 1. It should be noted that... Figure 2 This diagram illustrates the state of substrate processing performed by the substrate processing apparatus 100A. Substrate processing refers to processing the substrate W with processing solution LQ. Open valves are shown in white, and closed valves are shown in black.

[0068] like Figure 2 As shown, the substrate processing apparatus 100A also includes a gas supply unit 200 and at least one bubble supply pipe 180A.

[0069] The gas supply unit 200 supplies gas from the gas supply source 263 to the bubble supply pipe 180A via the gas supply pipe 261A. The gas supplied by the gas supply unit 200 to the bubble supply pipe 180A is, for example, an inert gas. The inert gas is, for example, nitrogen (N2) or argon (Ar).

[0070] Specifically, the gas supply unit 200 includes a supply mechanism 251A and a gas supply pipe 261A. The supply mechanism 251A includes a valve 211A, a flow meter 217A, and a regulating valve 219A. The valve 211A, the flow meter 217A, and the regulating valve 219A are arranged on the gas supply pipe 261A from downstream to upstream in that order.

[0071] The regulating valve 219A adjusts the opening degree (hereinafter referred to as "opening degree OAn") to regulate the flow rate of gas supplied to the bubble supply pipe 180A. "Flow rate" means, for example, the flow rate through a unit area per unit time. Specifically, the regulating valve 219A includes a valve body (not shown) with a valve seat disposed inside, a valve core for opening and closing the valve seat, and an actuator (not shown) for moving the valve core between an open position and a closed position.

[0072] Flow meter 217A measures the flow rate of gas flowing through gas supply pipe 261A. Control valve 219A adjusts the gas flow rate based on the measurement result of flow meter 217A. It should be noted that, for example, control valve 219A can be the control valve of a mass flow controller.

[0073] Valve 211A opens and closes gas supply pipe 261A. That is, valve 211A switches between supplying gas from gas supply pipe 261A to bubble supply pipe 180A and stopping gas supply.

[0074] Next, the bubble supply pipe 180A will be described. The bubble supply pipe 180A generates multiple bubbles (many bubbles) in the processing liquid LQ and supplies multiple bubbles (many bubbles) to multiple substrates W immersed in the processing liquid LQ. For example, the bubble supply pipe 180A is a bubbler.

[0075] The bubble supply tube 180A has a generally cylindrical shape. For example, the bubble supply tube 180A is a pipe. The bubble supply tube 180A extends along a first direction D10.

[0076] The bubble supply tube 180A has a first end 180a and a second end 180b. The first end 180a is one of the two ends of the bubble supply tube 180A in the first direction D10. The second end 180b is the other end of the two ends of the bubble supply tube 180A in the first direction D10.

[0077] A gas supply pipe 261A is connected to the first end 180a. Specifically, the bubble supply pipe 180A can be freely attached to and detached from the gas supply pipe 261A. The first end 180a is closed except for the part connected to the gas supply pipe 261A. The second end 180b is closed.

[0078] Specifically, the bubble supply pipe 180A further has a flow path FW0. Gas flows through the flow path FW0. The flow path FW0 is formed inside the bubble supply pipe 180A along the first direction D10. One end of the flow path FW0 is open and communicates with the gas supply pipe 261A. The other end of the flow path FW0 is a closed structure.

[0079] Furthermore, the bubble supply pipe 180A further has a plurality of bubble supply holes G communicating with the flow path FW0. The bubble supply hole G is an example of an open structure. For example, the bubble supply hole G is circular. The diameter of the bubble supply hole G is, for example, on the order of tens to hundreds of μm. Additionally, for example, the number of bubble supply holes G provided on a single bubble supply pipe 180A is, for example, 40 or 60.

[0080] In the bubble supply pipe 180A, a plurality of bubble supply holes G are arranged approximately in a straight line at predetermined intervals in the first direction D10. Each bubble supply hole G is located on the upper surface of the bubble supply pipe 180A. It should be noted that the position of the bubble supply holes G is not particularly limited as long as bubbles can be supplied from them. Furthermore, the plurality of bubble supply holes G in the bubble supply pipe 180A can be arranged at equal intervals or unequal intervals.

[0081] The bubble supply tube 180A is made of materials such as quartz or synthetic resin. Synthetic resins are acid-resistant, such as PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer) or PTFE (polytetrafluoroethylene).

[0082] In particular, when the bubble supply pipe 180A is made of synthetic resin, its processing is easy. Furthermore, when the bubble supply pipe 180A is made of PFA, bending is easy. For example, it can be processed into an L-shape. Therefore, the number of joints between the bubble supply pipe 180A and other piping can be reduced. As a result, the durability of the bubble supply pipe 180A can be improved.

[0083] A bubble supply pipe 180A is disposed inside the processing tank 110. Specifically, inside the processing tank 110, the bubble supply pipe 180A is disposed at the bottom of the processing tank 110. More specifically, the bubble supply pipe 180A is disposed in the inner tank 112 of the processing tank 110. More specifically, inside the inner tank 112, the bubble supply pipe 180A is disposed at the bottom of the inner tank 112. More specifically, when processing the substrate W, the bubble supply pipe 180A is disposed at a predetermined depth HA in the processing liquid LQ. The predetermined depth HA represents the distance from the surface of the processing liquid LQ to the bubble supply hole G. The bubble supply pipe 180A is fixed to the bottom of the inner tank 112. The bubble supply pipe 180A can be in contact with the bottom of the inner tank 112 or can be separated from the bottom of the inner tank 112.

[0084] Next, the control device U4 will be described. The substrate processing apparatus 100A also includes the control device U4.

[0085] The control device U4 controls the board processing apparatus 100A. For example, the control device U4 controls the board holding section 120 and the gas supply section 200.

[0086] For example, the control device U4 is a computer. More specifically, the control device U4 includes a control unit 10 and a storage device 20.

[0087] Storage device 20 stores data and computer programs. For example, storage device 20 includes a primary storage device and a secondary storage device. For example, the primary storage device includes a semiconductor memory. The secondary storage device includes, for example, a semiconductor memory, a solid-state drive, and / or a hard disk drive.

[0088] The control unit 10 includes, for example, a processor such as a CPU (Central Processing Unit). Specifically, the control unit 10 includes a flow control unit 11.

[0089] When processing substrate W, flow control unit 11 supplies gas with a first flow rate F1 to gas supply pipe 261A by controlling gas supply unit 200. Specifically, flow control unit 11 adjusts the opening degree OAn of regulating valve 219A based on the flow rate measured by flow meter 217A to supply gas with a first flow rate F1 to gas supply pipe 261A. The first flow rate F1 is the flow rate used to process substrate W. Therefore, gas with a first flow rate F1 is supplied to bubble supply pipe 180A through gas supply pipe 261A. As a result, multiple bubbles are supplied to processing liquid LQ from multiple bubble supply holes G of bubble supply pipe 180A.

[0090] Next, refer to Figure 3 Description of pressure gauge 253A. Figure 3 This diagram illustrates the state of the substrate processing apparatus 100A performing a determination process. The determination process refers to determining the state of the bubble supply pipe 180A. In Embodiment 1, multiple substrates W are pulled up from the processing liquid LQ in the processing tank 110.

[0091] like Figure 3 As shown, the substrate processing apparatus 100A also includes a pressure gauge 253A. The pressure gauge 253A is an example of a physical quantity detection unit.

[0092] Pressure gauge 253A detects a physical quantity via gas supply pipe 261A. This physical quantity is caused by the state of bubble supply pipe 180A. In Embodiment 1, pressure gauge 253A detects the pressure in gas supply pipe 261A. In Embodiment 1, the physical quantity represents the pressure in gas supply pipe 261A. Pressure gauge 253A is connected between valve 211A and flow meter 217A. As a result, when valve 211A is open, the pressure represents the pressure in bubble supply pipe 180A.

[0093] When determining the state of the bubble supply pipe 180A, the flow control unit 11 supplies gas at a second flow rate F2 to the gas supply pipe 261A by controlling the gas supply unit 200. Specifically, the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A based on the flow rate measured by the flow meter 217A, and supplies gas at a second flow rate F2 to the gas supply pipe 261A. The second flow rate F2 is greater than the first flow rate F1. The second flow rate F2 is the flow rate used to determine the state of the bubble supply pipe 180A. For example, the second flow rate F2 is preferably more than 2 times and less than 10 times the first flow rate F1. Therefore, gas at a second flow rate F2 is supplied to the bubble supply pipe 180A through the gas supply pipe 261A. As a result, multiple bubbles are supplied to the processing liquid LQ from the multiple bubble supply holes G of the bubble supply pipe 180A.

[0094] In the substrate processing apparatus 100A, the control unit 10 further includes a determination unit 12.

[0095] The determination unit 12 determines the state of the plurality of bubble supply holes G based on the pressure detected by the pressure gauge 253A (hereinafter referred to as "pressure PAn"). Specifically, the determination unit 12 determines the state of the plurality of bubble supply holes G based on the pressure PAn. n is 1 or 2. In detail, the determination unit 12 compares the pressure PA1 detected at a first time t1 with the pressure PA2 detected at a second time t2 to determine the state of the plurality of bubble supply holes G. Pressure PA1 is an example of a reference physical quantity. Pressure PA1 represents the pressure detected at the first time t1 (hereinafter referred to as "reference pressure PA1"). Pressure PA2 is an example of a detected physical quantity. Pressure PA2 represents the pressure detected at the second time t2 (hereinafter referred to as "detection pressure PA2"). The first time t1 and the second time t2 are different. Specifically, the first time t1 represents the time before the substrate W is processed. For example, the first time t1 represents the time when the state of the plurality of bubble supply holes G is in the initial state. The initial state represents the state when the bubble supply tube 180A is installed, or the state of the plurality of bubble supply holes G immediately after the bubble supply tube 180A is installed. For example, in the initial state, the multiple bubble supply holes G are substantially unaffected by the processing liquid LQ, and the apertures of the multiple bubble supply holes G in the unused bubble supply tube 180A remain substantially unchanged. The second time t2 represents the time after processing the substrate W. For example, the second time t2 represents the time after multiple processing operations of the substrate W, and the second time t2 is determined experimentally or empirically. The reference pressure PA1 is stored in the storage device 20.

[0096] Here, refer to Figure 4 and Figure 5 This illustrates the relationship between the state of multiple bubble supply holes G and the pressure PAn. Figure 4 and Figure 5This is a graph showing the relationship between the flow rate of gas supplied to the bubble supply pipe 180A and the difference ΔPA between the reference pressure PA1 and the detection pressure PA2. Figure 4 and Figure 5 In the diagram, the horizontal axis represents the flow rate of gas supplied to the bubble supply pipe 180A, and the vertical axis represents the difference ΔPA between the reference pressure PA1 and the detection pressure PA2. The reference pressure PA1 represents the pressure when the bubble supply pipe 180A, which has 60 bubble supply holes G with a diameter of 260 μm, is arranged in the substrate processing apparatus 100A. The bubble supply pipe 180A with 60 bubble supply holes G with a diameter of 260 μm represents the bubble supply pipe 180A in its initial state (normal state).

[0097] exist Figure 4 In this context, the detection pressure PA21 represents the detection pressure when a bubble supply tube 180A with 5 out of 60 bubble supply holes G blocked is disposed in the substrate processing apparatus 100A. The difference ΔPA21 represents the difference between the reference pressure PA1 and the detection pressure PA21. It should be noted that, instead of a bubble supply tube 180A with 5 blocked bubble supply holes G, a bubble supply tube 180A in which a small amount of component (e.g., silicon (Si)) is precipitated at the periphery of the 60 bubble supply holes G can be used.

[0098] Additionally, the detection pressure PA22 represents the detection pressure when a bubble supply tube 180A with 10 out of 60 bubble supply holes G blocked is disposed in the substrate processing apparatus 100A. The difference ΔPA22 represents the difference between the reference pressure PA1 and the detection pressure PA22. It should be noted that, instead of a bubble supply tube 180A with 10 bubble supply holes G blocked, a bubble supply tube 180A in which a large amount of components (e.g., silicon (Si)) are precipitated at the periphery of the 60 bubble supply holes G can be used.

[0099] like Figure 4 As shown, the difference ΔPA22 is larger than the difference ΔPA21. Therefore, the determination unit 12 can determine the state of the multiple bubble supply holes G based on the pressure PAn. As a result, visual inspection of the bubble supply pipe 180A is not required. Therefore, the state of the multiple bubble supply holes G can be easily confirmed.

[0100] Furthermore, the higher the flow rate, the larger the differential ΔPA21 and differential ΔPA22. Therefore, by making the second flow rate F2 greater than the first flow rate F1, even if the state changes of the multiple bubble supply orifices G are small, the differential ΔPA increases. As a result, the state of the multiple bubble supply orifices G can be confirmed with high precision.

[0101] In addition, Figure 5In this context, the detection pressure PA23 represents the detection pressure when a bubble supply tube 180A with 60 bubble supply holes G, each with a pore size of 300 μm, is disposed in the substrate processing apparatus 100A. In other words, the bubble supply tube 180A with 60 bubble supply holes G, each with a pore size of 300 μm, represents a bubble supply tube 180A with enlarged dimensions of the 60 bubble supply holes G. Specifically, the bubble supply tube 180A with 60 bubble supply holes G, each with a pore size of 300 μm, represents a bubble supply tube 180A in which the peripheral portions of the 60 bubble supply holes G dissolve into the processing liquid LQ. The difference ΔPA23 represents the difference between the reference pressure PA1 and the detection pressure PA23.

[0102] like Figure 5 As shown, the larger the flow rate, the smaller the differential ΔPA23. Therefore, the determination unit 12 can determine the state of the multiple bubble supply holes G based on the pressure PAn. As a result, visual inspection of the bubble supply pipe 180A is not required. Therefore, the state of the multiple bubble supply holes G can be easily confirmed.

[0103] Furthermore, the higher the flow rate, the smaller the differential ΔPA23. Therefore, by making the second flow rate F2 greater than the first flow rate F1, even if the state changes of the multiple bubble supply orifices G are small, the absolute value of the differential ΔPA increases. As a result, the state of the multiple bubble supply orifices G can be confirmed with high precision.

[0104] In detail, the determination unit 12 determines whether the state of the multiple bubble supply orifices G is abnormal based on the difference ΔPA between the reference pressure PA1 and the detection pressure PA2. Specifically, if the difference ΔPA is above a first threshold TH1, the determination unit 12 determines that the multiple bubble supply orifices G are abnormal. The first threshold TH1 represents the value at which the multiple bubble supply orifices G become smaller or blocked, resulting in an abnormal state. Furthermore, if the difference ΔPA is below a second threshold TH2, the determination unit 12 determines that the multiple bubble supply orifices G are abnormal. The second threshold TH2 represents the value at which the multiple bubble supply orifices G become larger or enlarged, resulting in an abnormal state. Additionally, if the difference ΔPA is above the second threshold TH2 but below the first threshold TH1, the determination unit 12 determines that the state of the multiple bubble supply orifices G is normal.

[0105] The above is as shown in Figure 1~ Figure 5 As explained, according to Embodiment 1, the determination unit 12 determines the state of the plurality of bubble supply holes G based on the pressure PAn. As a result, visual inspection of the bubble supply pipe 180A is unnecessary. Therefore, the state of the plurality of bubble supply holes G can be easily confirmed. Furthermore, the state of the plurality of bubble supply holes G can be confirmed without individual differences.

[0106] Furthermore, the determination unit 12 compares the reference pressure P1 detected at the first time t1 with the detection pressure P2 detected at the second time t2 to determine the state of the multiple bubble supply holes G. As a result, it is possible to confirm the change in the state of the multiple bubble supply holes G from the first time t1 to the second time t2.

[0107] Furthermore, the first time t1 represents the time before the substrate W is processed. As a result, it is possible to confirm the changes that have occurred in the bubble supply tube 180 compared to its initial state (new product).

[0108] Here, as Figure 2 and Figure 3 As shown, the substrate processing apparatus 100A also includes a drain section 170. The drain section 170 discharges the processing liquid LQ from the processing tank 110.

[0109] Specifically, the drainage section 170 includes a drainage pipe 170a and a valve 170b. Additionally, the drainage pipe 170a is connected to the bottom wall of the inner tank 112 of the treatment tank 110. The drainage pipe 170a is equipped with the valve 170b. By opening the valve 170b, the treatment liquid LQ stored in the inner tank 112 is discharged to the outside via the drainage pipe 170a. The discharged treatment liquid LQ is sent to a drainage treatment device (not shown) and processed. Specifically, before determining the status of the multiple bubble supply holes G, a portion of the treatment liquid LQ stored in the inner tank 112 is discharged to the outside via the drainage pipe 170a by opening the valve 170b. As a result, the bubble supply pipe 180A is positioned at a predetermined depth HB in the treatment liquid LQ. The predetermined depth HB represents the distance from the liquid surface of the treatment liquid LQ to the bubble supply hole G. The predetermined depth HB is lower than the predetermined depth HA and can be 0. Therefore, in the judgment process, the influence of the treatment fluid LQ can be suppressed, and the status of multiple bubble supply holes G can be confirmed with high precision.

[0110] In addition, the substrate processing apparatus 100A also includes a cleaning fluid supply unit 190. The cleaning fluid supply unit 190 includes a pipe 190a, a valve 190b, and a cleaning fluid supply source 190c. The valve 190b is disposed on the pipe 190a. Cleaning fluid from the cleaning fluid supply source 190c is supplied to the pipe 190a. For example, hydrofluoric acid (HF) can be used as the cleaning fluid. When the valve 190b is opened, cleaning fluid is supplied to the inner tank 112. As a result, after the determination process, the components (e.g., silicon (Si)) precipitated at the periphery of the bubble supply holes G and the silicon oxide (SiO2) generated by the reaction of silicon (Si) with water (H2O) can be dissolved. Therefore, the state of the multiple bubble supply holes G can be restored.

[0111] Next, refer to Figure 6 The substrate processing method of Embodiment 1 of the present invention is described. Figure 6 This is a flowchart illustrating the substrate processing method of Embodiment 1. For example... Figure 6 As shown, the substrate processing method includes steps S1 to S14. The substrate processing method is performed by the substrate processing apparatus 100A.

[0112] First, in process S1, under the control of the control device U4, the substrate holding unit 120 immerses multiple substrates W in the processing liquid LQ of the processing tank 110.

[0113] Next, in process S2, the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A based on the flow rate measured by the flow meter 217A, and supplies gas with a first flow rate F1 to the bubble supply pipe 180A.

[0114] Next, in process S3, after processing multiple substrates W, the flow control unit 11 closes valve 211A to stop supplying gas to the bubble supply pipe 180A.

[0115] Next, in process S4, under the control of the control device U4, the substrate holding unit 120 pulls up multiple substrates W from the processing liquid LQ in the processing tank 110.

[0116] Next, in process S5, by opening valve 170b for a specified time, a portion of the treatment fluid LQ stored in the inner tank 112 is discharged to the outside via drain pipe 170a. The specified time represents the time required for the fluid to change from a specified depth HA to a specified depth HB.

[0117] Next, in process S6, the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A based on the flow rate measured by the flow meter 217A, and supplies gas with a second flow rate F2 to the bubble supply pipe 180A.

[0118] Next, in process S7, pressure gauge 253A detects pressure PA2 via gas supply pipe 261A.

[0119] Next, in process S8, the flow control unit 11 closes valve 211A to stop supplying gas to the bubble supply pipe 180A.

[0120] Next, in process S9, the determination unit 12 determines which range the difference ΔPA between the reference pressure PA1 and the test pressure PA2 belongs to.

[0121] In process S9, if the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 is greater than or equal to the second threshold TH2 and less than the first threshold TH1, the determination unit 12 determines that the state of the multiple bubble supply holes G is normal, and the substrate processing method ends.

[0122] In addition, in process S9, if the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 is greater than or equal to the first threshold TH1, the determination unit 12 determines that the state of the multiple bubble supply holes G is abnormal (the multiple bubble supply holes G are blocked), and proceeds to process S10.

[0123] In process S10, by opening valve 170b for a specified time, the treatment liquid LQ stored in the inner tank 112 is discharged to the outside via drain pipe 170a. The specified time indicates the time it takes for the treatment liquid LQ to disappear from the inner tank 112.

[0124] Next, in process S11, when valve 190b is opened, cleaning fluid is supplied to the inner tank 112.

[0125] Next, in process S12, by opening valve 170b, the cleaning fluid stored in the inner tank 112 is discharged to the outside via drain pipe 170a. Then, the substrate processing method ends.

[0126] On the other hand, in process S9, if the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 is below the second threshold TH2, the determination unit 12 determines that the state of the multiple bubble supply holes G is abnormal (the multiple bubble supply holes G are enlarged), and proceeds to process S13.

[0127] In process S13, by opening valve 170b, the processing liquid LQ stored in inner tank 112 is discharged to the outside through drain pipe 170a.

[0128] Next, in process S14, the bubble supply tube 180A is replaced with a new bubble supply tube 180A. Then, the substrate processing method ends.

[0129] The above is for reference only. Figure 6 As explained, according to Embodiment 1, the determination unit 12 determines whether the state of the plurality of bubble supply holes G is abnormal based on the difference ΔPA between the reference pressure PA1 and the detection pressure PA2. Specifically, if the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 is a first threshold TH1 or higher, the plurality of bubble supply holes G of the bubble supply tube 180A can be cleaned. On the other hand, if the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 is a second threshold TH2 or lower, the bubble supply tube 180A is replaced with a new bubble supply tube 180A. As a result, the state of the plurality of bubble supply holes G can be appropriately restored.

[0130] Next, refer to Figure 7 The substrate processing apparatus 100A is described in detail. Figure 7 This is a diagram showing the substrate processing apparatus 100A.

[0131] The substrate processing apparatus 100A also includes multiple circulating processing liquid supply components 130 and circulation units 140.

[0132] In substrate processing, the circulation unit 140 circulates the processing liquid LQ stored in the processing tank 110 and supplies the processing liquid LQ to each circulating processing liquid supply member 130.

[0133] The circulation unit 140 includes piping 141, pump 142, heater 143, filter 144, regulating valve 145, and valve 146. The pump 142, heater 143, filter 144, regulating valve 145, and valve 146 are arranged from upstream to downstream of piping 141.

[0134] Pipe 141 re-introduces the treatment fluid LQ discharged from treatment tank 110 into treatment tank 110. At the downstream end of pipe 141, multiple circulating treatment fluid supply components 130 are connected.

[0135] Pump 142 delivers treatment fluid LQ from piping 141 to multiple circulating treatment fluid supply components 130. Therefore, the circulating treatment fluid supply components 130 supply the treatment fluid LQ supplied from piping 141 to the treatment tank 110. Heater 143 heats the treatment fluid LQ flowing through piping 141. The temperature of the treatment fluid LQ is regulated by heater 143. Filter 144 filters the treatment fluid LQ flowing through piping 141.

[0136] Control valve 145 regulates the opening of piping 141 to regulate the flow rate of treatment fluid LQ supplied to multiple circulating treatment fluid supply components 130. Specifically, control valve 145 includes a valve body (not shown) with a valve seat disposed inside, a valve core for opening and closing the valve seat, and an actuator (not shown) for moving the valve core between an open position and a closed position. Valve 146 opens and closes piping 141.

[0137] Multiple circulating treatment fluid supply components 130 supply treatment fluid LQ to the inner tank 112 of the treatment tank 110. Inside the inner tank 112 of the treatment tank 110, the multiple circulating treatment fluid supply components 130 are disposed at the bottom of the inner tank 112. Each of the multiple circulating treatment fluid supply components 130 has a generally cylindrical shape. For example, each of the multiple circulating treatment fluid supply components 130 is a pipe.

[0138] Specifically, each of the multiple circulating treatment fluid supply components 130 has multiple treatment fluid discharge holes P. Figure 7 In this configuration, only one treatment fluid discharge port P is shown in one circulating treatment fluid supply component 130. Multiple circulating treatment fluid supply components 130 supply treatment fluid LQ to the inner tank 112 from multiple treatment fluid discharge ports P.

[0139] The substrate processing apparatus 100A also includes a processing liquid supply unit 150 and a diluent supply unit 160.

[0140] The treatment solution supply unit 150 supplies treatment solution LQ to the treatment tank 110. The treatment solution LQ can be, for example, a solution of approximately 85% by mass phosphoric acid (H3PO4) and approximately 15% by mass water (deionized water).

[0141] The processing fluid supply unit 150 includes a nozzle 152, a pipe 154, and a valve 156. The nozzle 152 discharges processing fluid LQ into the inner tank 112. The nozzle 152 is connected to the pipe 154. Processing fluid LQ from the processing fluid supply source TKA is supplied to the pipe 154. The valve 156 is installed on the pipe 154.

[0142] When valve 156 is opened, the treatment fluid LQ sprayed from nozzle 152 is supplied into the inner tank 112.

[0143] The diluent supply unit 160 supplies diluent to the treatment tank 110.

[0144] The diluent supply unit 160 includes a nozzle 162, a pipe 164, and a valve 166. The nozzle 162 discharges diluent into the outer tank 114. The nozzle 162 is connected to the pipe 164. The diluent supplied to the pipe 164 can be any of the following: DIW (deionized water), carbonated water, electrolyzed ionized water, hydrogen water, ozone water, and hydrochloric acid water with a dilution concentration (e.g., approximately 10 ppm to 100 ppm). Diluent from the diluent supply source TKB is supplied to the pipe 164. The valve 166 is installed on the pipe 164. When the valve 166 is opened, the diluent ejected from the nozzle 162 is supplied into the outer tank 114.

[0145] Additionally, the processing tank 110 further includes a cover 116. The cover 116 is openable and closable relative to the upper opening of the inner tank 112. By closing the cover 116, the upper opening of the inner tank 112 can be sealed.

[0146] The cover 116 has opening portions 116a and 116b. Opening portion 116a is located on one side of the upper opening of the inner groove 112. Opening portion 116a is positioned near the upper edge of the inner groove 112 and can be opened and closed relative to the upper opening of the inner groove 112. Opening portion 116b is located on the other side of the upper opening of the inner groove 112. Opening portion 116b is positioned near the upper edge of the inner groove 112 and can be opened and closed relative to the upper opening of the inner groove 112. By closing opening portions 116a and 116b to cover the upper opening of the inner groove 112, the inner groove 112 of the processing groove 110 can be sealed. It should be noted that the cover 116 may also have a venting mechanism (not shown).

[0147] Next, refer to Figure 7 and Figure 8 This describes multiple bubble supply pipes 180 and gas supply section 200. Figure 8This is a schematic top view showing multiple circulating treatment fluid supply components 130 and multiple bubble supply pipes 180.

[0148] like Figure 8 As shown, the substrate processing apparatus 100A includes a gas supply unit 280A. Specifically, the gas supply unit 280A includes at least one bubble supply pipe 180 and at least one support member 185. More specifically, the gas supply unit 280A includes a plurality of bubble supply pipes 180 and a plurality of support members 185.

[0149] Multiple bubble supply pipes 180 and multiple support members 185 are disposed inside the processing tank 110. Specifically, inside the processing tank 110, the multiple bubble supply pipes 180 are disposed at the bottom 110a of the processing tank 110. More specifically, the multiple bubble supply pipes 180 are disposed in the inner tank 112 of the processing tank 110. More specifically, inside the inner tank 112, the multiple bubble supply pipes 180 are disposed at the bottom 110a of the inner tank 112.

[0150] Multiple bubble supply tubes 180 are each supported by a corresponding support member 185. Specifically, the multiple bubble supply tubes 180 are fixed to their respective support members 185. Therefore, deformation of the bubble supply tubes 180 can be suppressed. The multiple support members 185 are fixed to the bottom 110a of the processing tank 110. Specifically, the multiple support members 185 are fixed to the bottom 110a of the inner tank 112. Therefore, when processing the substrate W, the multiple bubble supply tubes 180 are respectively positioned at a predetermined depth HA in the processing liquid LQ.

[0151] In detail, in the top view, the circulating fluid supply member 130 and the bubble supply pipe 180 are arranged substantially parallel to each other and spaced apart. In the top view, one of the two circulating fluid supply members 130 is positioned between the two bubble supply pipes 180. Additionally, in the top view, the other of the two circulating fluid supply members 130 is positioned between two other bubble supply pipes 180. Furthermore, in the top view, of the four bubble supply pipes 180, the two middle bubble supply pipes 180 are opposite each other in the second direction D20.

[0152] Specifically, a plurality of bubble supply pipes 180 are arranged substantially parallel to each other and spaced apart in a second direction D20 within a processing tank 110 (specifically, an inner tank 112). The bubble supply pipes 180 extend along a first direction D10. In each of the plurality of bubble supply pipes 180, a plurality of bubble supply holes G are arranged spaced apart in a substantially straight line in the first direction D10. In each of the plurality of bubble supply pipes 180, each bubble supply hole G is located on the upper surface portion of the bubble supply pipe 180. Furthermore, each bubble supply hole G supplies bubbles upward from the bottom of the processing tank 110 (specifically, an inner tank 112).

[0153] Furthermore, multiple circulating treatment fluid supply members 130 are arranged substantially parallel to each other and spaced apart in the second direction D20 within the treatment tank 110 (specifically, the inner tank 112). The circulating treatment fluid supply members 130 extend along the first direction D10. In each of the multiple circulating treatment fluid supply members 130, multiple treatment fluid discharge holes P are arranged spaced apart in a substantially straight line in the first direction D10. In each of the multiple circulating treatment fluid supply members 130, each treatment fluid discharge hole P is located on the upper surface portion of the circulating treatment fluid supply member 130. Additionally, each treatment fluid discharge hole P discharges treatment fluid LQ upwards from the bottom of the treatment tank 110 (specifically, the inner tank 112). It should be noted that... Figure 7 In the middle, the treatment fluid discharge hole P faces obliquely upward, but it is not limited to this. The treatment fluid discharge hole P can face downward or to the side.

[0154] Next, refer to Figure 8 and Figure 9 Explanation of Gas Supply Section 200. Figure 9 This diagram illustrates the state of the substrate processing apparatus 100A performing the determination process. (Example) Figure 8 and Figure 9 As shown, the gas supply unit 200 supplies gas for generating bubbles to a plurality of bubble supply pipes 180, and the plurality of bubble supply pipes 180 respectively supply a plurality of bubbles to a plurality of substrates W immersed in the processing liquid LQ. Specifically, the gas supply unit 200 includes a gas supply pipe 260.

[0155] For example, gas supply pipe 260 includes a common pipe 262 and multiple gas supply pipes 261. The multiple gas supply pipes 261 include gas supply pipe 261A, gas supply pipe 261B, gas supply pipe 261C and gas supply pipe 261D.

[0156] A common piping 262 is connected to a gas supply source 263. Specifically, the upstream end of the common piping 262 is connected to the gas supply source 263. The gas supply source 263 supplies gas to the common piping 262. The common piping 262 is connected to the upstream end of each gas supply pipe 261.

[0157] The downstream end of gas supply pipe 261A is connected to bubble supply pipe 180A. The downstream end of gas supply pipe 261B is connected to bubble supply pipe 180B. The downstream end of gas supply pipe 261C is connected to bubble supply pipe 180C. The downstream end of gas supply pipe 261D is connected to bubble supply pipe 180D. In this example, gas is supplied from a common piping 262 to each bubble supply pipe 180 through each gas supply pipe 261.

[0158] exist Figure 8 and Figure 9The diagram shows the logical configuration of the gas supply pipe 260. Therefore, the connection configuration between the gas supply pipe 260 and each bubble supply pipe 180 is not particularly limited, as long as gas can be supplied from the gas supply pipe 260 to each bubble supply pipe 180. It should be noted that... Figure 8 and Figure 9 The physical structure of the gas supply pipe 260 can be shown.

[0159] The gas supply unit 200 further includes a gas supply mechanism 250. The gas supply mechanism 250 supplies gas to each bubble supply pipe 180 via a gas supply pipe 260. Specifically, the gas supply mechanism 250 includes a common supply mechanism 252 and multiple supply mechanisms 251. The multiple supply mechanisms 251 include supply mechanisms 251A, 251B, 251C, and 251D.

[0160] The shared supply mechanism 252 includes a pressure gauge 252c, a regulator 252b, and a valve 252a. These components are arranged on the shared piping 262 from downstream to upstream in that order. The pressure gauge 252c detects the pressure in the shared piping 262. The pressure gauge 252c is connected between the gas supply line 261 and the regulator 252b. When the valve 252a is opened, gas is supplied from the gas supply source 263 to the shared piping 262.

[0161] The supply mechanism 251A supplies gas from the gas supply source 263 to the bubble supply pipe 180A via the gas supply pipe 261A. Specifically, in addition to the valve 211A, flow meter 217A, and regulating valve 219A, the supply mechanism 251A further includes a filter 212A. The filter 212A filters the gas flowing through the gas supply pipe 261A.

[0162] Supply mechanism 251B supplies gas from gas supply source 263 to bubble supply pipe 180B via gas supply pipe 261B. Supply mechanism 251C supplies gas from gas supply source 263 to bubble supply pipe 180C via gas supply pipe 261C. Supply mechanism 251D supplies gas from gas supply source 263 to bubble supply pipe 180D via gas supply pipe 261D. The configurations of supply mechanisms 251B, 251C, and 251D are the same as those of supply mechanism 251A.

[0163] Figure 9 The substrate processing apparatus 100A shown also includes a plurality of pressure gauges 253. The plurality of pressure gauges 253 are examples of physical quantity detection units. The plurality of pressure gauges 253 include pressure gauge 253A, pressure gauge 253B, pressure gauge 253C and pressure gauge 253D.

[0164] Pressure gauge 253A detects the pressure in gas supply pipe 261A. Pressure gauge 253B detects the pressure in gas supply pipe 261B. Pressure gauge 253C detects the pressure in gas supply pipe 261C. Pressure gauge 253D detects the pressure in gas supply pipe 261D. The pressures in gas supply pipes 261A, 261B, 261C, and 261D are examples of physical quantities.

[0165] The substrate processing apparatus 100A also includes multiple exhaust mechanisms 300. Each of the multiple exhaust mechanisms 300 discharges gas to the outside. Specifically, each of the multiple exhaust mechanisms 300 includes an exhaust pipe and a valve. A valve is disposed on the exhaust pipe. The valve opens and closes the exhaust pipe. One end of the exhaust pipe is connected to a gas supply pipe 261. By opening the valve, gas is discharged to the outside from the gas supply pipe 261 via the exhaust pipe.

[0166] The above is for reference only. Figure 9 As explained, according to Embodiment 1, the determination unit 12 can determine whether the state of each of the multiple bubble supply pipes 180 is abnormal based on the pressure detected by the multiple pressure gauges 253. Specifically, the determination unit 12 can determine whether the state of bubble supply pipe 180A is abnormal. The determination unit 12 can determine whether the state of bubble supply pipe 180B is abnormal. The determination unit 12 can determine whether the state of bubble supply pipe 180C is abnormal. The determination unit 12 can determine whether the state of bubble supply pipe 180D is abnormal.

[0167] <Implementation Method 2>

[0168] Reference Figure 10 The substrate processing apparatus 100B of Embodiment 2 of the present invention is described. Figure 10 This diagram illustrates the state of the substrate processing apparatus 100B performing the determination process. The main difference between Embodiment 2 and Embodiment 1 is that, in Embodiment 2, the substrate processing apparatus 100B determines the state of the multiple bubble supply holes G based on the opening degree OAn of the regulating valve 219A. The differences between Embodiment 2 and Embodiment 1 will be explained below.

[0169] In embodiment 2, the regulating valve 219A is an example of a physical quantity detection unit. The regulating valve 219A controls the flow rate of gas supplied to the gas supply pipe 261A. The regulating valve 219A outputs information indicating its opening degree OAn to the control device U4. The opening degree OAn of the regulating valve 219A is an example of a physical quantity.

[0170] When determining the state of the bubble supply pipe 180A, the flow control unit 11 supplies gas at a first flow rate F1 to the gas supply pipe 261A by controlling the gas supply unit 200. Specifically, the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A based on the flow rate measured by the flow meter 217A, and supplies gas at the first flow rate F1 to the gas supply pipe 261A. Therefore, gas at the first flow rate F1 is supplied to the bubble supply pipe 180A through the gas supply pipe 261A. As a result, multiple bubbles are supplied to the processing liquid LQ from the multiple bubble supply holes G of the bubble supply pipe 180A.

[0171] The determination unit 12 determines the state of the plurality of bubble supply orifices G based on the opening degree OAAn output from the regulating valve 219A. n is 1 or 2. Specifically, the determination unit 12 compares the opening degree OA1 detected at the first time t1 with the opening degree OA2 detected at the second time t2 to determine the state of the plurality of bubble supply orifices G. The opening degree OA1 is an example of a reference physical quantity. The opening degree OA1 represents the opening degree detected at the first time t1 (hereinafter, it is referred to as "reference opening degree OA1"). The opening degree OA2 is an example of a detected physical quantity. The opening degree OA2 represents the opening degree detected at the second time t2 (hereinafter, it is referred to as "detected opening degree OA2"). The reference opening degree OA1 is stored in the storage device 20.

[0172] Here, refer to Figure 11 This illustrates the relationship between the state of multiple bubble supply holes G and their opening degree OAn. Figure 11 This is a graph showing the relationship between the flow rate of gas supplied to the bubble supply pipe 180A and the absolute difference ΔOA between the reference opening OA1 and the detection opening OA2. Figure 11 In the diagram, the horizontal axis represents the flow rate of gas supplied to the bubble supply pipe 180A, and the vertical axis represents the absolute difference ΔOA between the reference opening OA1 and the detection opening OA2. The reference opening OA1 represents the opening of the bubble supply pipe 180A, which has 60 bubble supply holes G with an aperture of 260μm, when it is disposed on the substrate processing apparatus 100B. In other words, the bubble supply pipe 180A with 60 bubble supply holes G with an aperture of 260μm represents the bubble supply pipe 180A in its initial state (normal state).

[0173] exist Figure 11 In the diagram, the detection opening OA21 represents the detection opening when a bubble supply tube 180A with 5 out of 60 bubble supply holes G blocked is configured in the substrate processing apparatus 100B. The absolute difference ΔOA21 represents the absolute difference between the reference opening OA1 and the detection opening OA21.

[0174] Additionally, the detection opening OA22 represents the opening degree when the bubble supply pipe 180A, with 10 of the 60 bubble supply holes G blocked, is arranged in the substrate processing apparatus 100B. The absolute difference ΔOA22 represents the absolute difference between the reference opening degree OA1 and the detection opening degree OA22.

[0175] Furthermore, the detection opening OA23 represents the opening degree when a bubble supply tube 180A with 60 bubble supply holes G, each with a diameter of 300 μm, is configured in the substrate processing apparatus 100B. The absolute difference ΔOA23 represents the absolute difference between the reference opening degree OA1 and the detection opening degree OA23.

[0176] like Figure 11 As shown, the absolute difference ΔOA22 is larger than the absolute difference ΔOA21. Therefore, the determination unit 12 can determine the state of the multiple bubble supply holes G based on the opening degree OAn. As a result, visual inspection of the bubble supply pipe 180A is not required. Therefore, the state of the multiple bubble supply holes G can be easily confirmed.

[0177] Furthermore, the lower the flow rate, the larger the absolute differences ΔOA21, ΔOA22, and ΔOA23. Therefore, at the first flow rate F1, even if the state changes of the multiple bubble supply holes G are small, the absolute difference ΔOA still increases. As a result, substrate processing and determination processing can be performed simultaneously.

[0178] In detail, the determination unit 12 determines whether the state of the multiple bubble supply orifices G is abnormal based on the absolute difference ΔOA between the reference opening OA1 and the detection opening OA2. Specifically, if the absolute difference ΔOA is above the threshold TH, the determination unit 12 determines that the state of the multiple bubble supply orifices G is abnormal. The threshold TH represents the value at which the state of the multiple bubble supply orifices G becomes abnormal due to shrinkage, blockage, enlargement, or expansion. Conversely, if the absolute difference ΔOA is less than the threshold TH, the determination unit 12 determines that the state of the multiple bubble supply orifices G is normal.

[0179] Next, refer to Figure 12 The substrate processing method of Embodiment 2 of the present invention is described. Figure 12 This is a flowchart illustrating the substrate processing method of Embodiment 2. For example... Figure 12 As shown, the substrate processing method includes steps S101 to S107. The substrate processing method is performed by the substrate processing apparatus 100B.

[0180] First, in process S101, under the control of the control device U4, the substrate holding unit 120 immerses multiple substrates W in the processing liquid LQ of the processing tank 110.

[0181] Next, in process S102, the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A to the detection opening degree OA2 based on the flow rate measured by the flow meter 217A, and supplies gas with a first flow rate F1 to the bubble supply pipe 180A.

[0182] Next, in process S103, regulating valve 219A outputs information to control device U4 indicating the detected opening degree OA2.

[0183] Next, in process S104, the determination unit 12 determines whether the absolute difference ΔOA between the reference opening OA1 and the detection opening OA2 is above the threshold TH.

[0184] In process S104, if the absolute difference ΔOA is above the threshold TH, the determination unit 12 determines that the state of multiple bubble supply holes G is abnormal and proceeds to process S105.

[0185] In process S105, the determination unit 12 notifies the bubble supply pipe 180A of an abnormality. For example, the determination unit 12 displays information on a display or an external terminal.

[0186] On the other hand, in process S104, if the absolute difference ΔOA is less than the threshold TH, the determination unit 12 determines that the state of the multiple bubble supply holes G is normal and proceeds to process S106.

[0187] Next, in process S106, the flow control unit 11 closes valve 211A to stop supplying gas to gas supply pipe 261A.

[0188] Next, in process S107, under the control of the control device U4, the substrate holding unit 120 pulls up multiple substrates W from the processing liquid LQ in the processing tank 110. Then, the substrate processing method ends.

[0189] The above is for reference only. Figures 10-12 According to Embodiment 2, the determination unit 12 determines the state of the multiple bubble supply holes G based on the opening degree OAn detected by the regulating valve 219A. As a result, the pressure gauge 253A is not required.

[0190] <Implementation Method 3>

[0191] Reference Figure 13 and Figure 14 This describes the substrate processing apparatus 100A according to Embodiment 3 of the present invention. Figure 13 and Figure 14This is a flowchart illustrating the substrate processing method of Embodiment 3. The main difference between Embodiment 3 and Embodiment 1 is that in Embodiment 3, the substrate processing apparatus 100A determines the state of the multiple bubble supply holes G based on the opening degree OAn of the regulating valve 219A. The following mainly describes the differences between Embodiment 3 and Embodiment 1. It should be noted that the substrate processing apparatus 100A of Embodiment 3 differs from that in Figures 1-1. Figure 3 The substrate processing apparatus shown is the same as the 100A.

[0192] like Figure 13 and Figure 14 As shown, the substrate processing method includes steps S201 to S218. The substrate processing method is performed by the substrate processing apparatus 100A. It should be noted that the substrate processing method of Embodiment 3 is performed after the substrate processing method of Embodiment 2 is performed, followed by the substrate processing method of Embodiment 1.

[0193] First, in process S201, under the control of the control device U4, the substrate holding unit 120 immerses multiple substrates W in the processing liquid LQ of the processing tank 110.

[0194] Next, in process S202, the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A to the detection opening degree OA2 based on the flow rate measured by the flow meter 217A, and supplies gas with a first flow rate F1 to the bubble supply pipe 180A.

[0195] Next, in process S203, regulating valve 219A outputs information to control device U4 indicating the detected opening degree OA2.

[0196] Next, in process S204, the determination unit 12 determines whether the absolute difference ΔOA between the reference opening OA1 and the detection opening OA2 is above the threshold TH.

[0197] In process S204, if the absolute difference ΔOA is less than the threshold TH, the determination unit 12 determines that the state of the multiple bubble supply holes G is normal and proceeds to process S205.

[0198] Next, in process S205, the flow control unit 11 closes valve 211A to stop supplying gas to gas supply pipe 261A.

[0199] Next, in process S206, under the control of the control device U4, the substrate holding unit 120 pulls up multiple substrates W from the processing liquid LQ in the processing tank 110. Then, the substrate processing method ends.

[0200] On the other hand, in process S204, if the absolute difference ΔOA is above the threshold TH, the determination unit 12 determines that the state of the multiple bubble supply holes G is abnormal and proceeds to process S207.

[0201] Next, in process S207, the flow control unit 11 closes valve 211A to stop supplying gas to gas supply pipe 261A.

[0202] Next, in Figure 14 In process S208 shown, the substrate holding unit 120 pulls up multiple substrates W from the processing liquid LQ in the processing tank 110 under the control of the control device U4.

[0203] Next, in process S209, by opening valve 170b for a specified time, a portion of the treatment fluid LQ stored in the inner tank 112 is discharged to the outside via drain pipe 170a. The specified time represents the time required for the fluid to change from a specified depth HA to a specified depth HB.

[0204] Next, in process S210, the flow control unit 11 adjusts the opening degree OAn of the regulating valve 219A based on the flow rate measured by the flow meter 217A, and supplies gas with a second flow rate F2 to the bubble supply pipe 180A.

[0205] Next, in process S211, pressure gauge 253A detects pressure PA2 via gas supply pipe 261A.

[0206] Next, in process S212, the flow control unit 11 closes valve 211A to stop supplying gas to the bubble supply pipe 180A.

[0207] Next, in process S213, the determination unit 12 determines which range the difference ΔPA between the reference pressure PA1 and the test pressure PA2 belongs to.

[0208] In process S213, if the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 is greater than or equal to the second threshold TH2 and less than the first threshold TH1, the determination unit 12 determines that the state of the multiple bubble supply holes G is normal, and the substrate processing method ends.

[0209] In addition, in process S213, if the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 is greater than or equal to the first threshold TH1, the determination unit 12 determines that the state of the multiple bubble supply holes G is abnormal (the multiple bubble supply holes G are blocked), and proceeds to process S214.

[0210] In process S214, by opening valve 170b for a specified time, the treatment liquid LQ stored in the inner tank 112 is discharged to the outside via drain pipe 170a. The specified time indicates the time it takes for the treatment liquid LQ to disappear from the inner tank 112.

[0211] Next, in process S215, when valve 190b is opened, cleaning fluid is supplied to the inner tank 112.

[0212] Next, in process S216, by opening valve 170b, the cleaning fluid stored in the inner tank 112 is discharged to the outside via drain pipe 170a. Then, the substrate processing method ends.

[0213] On the other hand, in process S213, if the difference ΔPA between the reference pressure PA1 and the detection pressure PA2 is below the second threshold TH2, the determination unit 12 determines that the state of the multiple bubble supply holes G is abnormal (the multiple bubble supply holes G are enlarged), and proceeds to process S217.

[0214] In process S217, by opening valve 170b, the processing liquid LQ stored in inner tank 112 is discharged to the outside through drain pipe 170a.

[0215] Next, in process S218, the bubble supply tube 180A is replaced with a new bubble supply tube 180A. Then, the substrate processing method ends.

[0216] The above is for reference only. Figures 13-14 According to Embodiment 3, the determination unit 12 determines the state of the plurality of bubble supply holes G based on the detection opening degree OAn detected by the regulating valve 219A. As a result, it is possible to determine the changes in the state of the plurality of bubble supply holes G under the first flow rate F1 when processing the substrate W. As a result, substrate processing and determination processing can be performed simultaneously.

[0217] Furthermore, after determining that the state of the multiple bubble supply orifices G is abnormal based on the detection opening OA2 detected by the regulating valve 219A, the determination unit 12 determines whether the state of the multiple bubble supply orifices G is abnormal based on the detection pressure PA2 detected by the pressure gauge 253A. As a result, it is possible to confirm the abnormality of the state of the multiple bubble supply orifices G with high accuracy.

[0218] The embodiments and examples of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments and examples, and can be implemented in various ways without departing from its spirit. Furthermore, multiple constituent elements disclosed in the above embodiments can be appropriately modified. For example, one of the constituent elements shown in one embodiment can be added to the constituent elements of another embodiment, or several constituent elements shown in one embodiment can be deleted from the embodiment.

[0219] Furthermore, to facilitate understanding of the invention, the accompanying drawings primarily illustrate the various constituent elements schematically. The thickness, length, number, and spacing of each constituent element shown in the drawings may differ from the actual dimensions for ease of drawing creation. Additionally, the configuration of the constituent elements shown in the above embodiments is merely an example and is not particularly limited. Various modifications can be made without substantially departing from the effects of the invention.

[0220] (1) In Embodiment 1, the determination unit 12 determines whether the state of each of the plurality of bubble supply tubes 180 is abnormal, but the present invention is not limited thereto. The determination unit 12 can determine whether the state of one selected from the plurality of bubble supply tubes 180 is abnormal, and the state of the selected one can be used as the state of each of the plurality of bubble supply tubes 180. As a result, pressure gauges 253B, 253C and 253D can be omitted.

[0221] (2) In Embodiment 1, the determination unit 12 determines whether the state of each of the plurality of bubble supply pipes 180 is abnormal one by one, but the present invention is not limited thereto. The determination unit 12 can determine whether the state of each of the plurality of bubble supply pipes 180 is abnormal at the same time. As a result, the determination processing time can be shortened.

[0222] (3) In Embodiment 1, the bubble supply pipe 180A extends along the first direction D10, but the present invention is not limited thereto. The bubble supply pipe 180A may extend along the second direction D20.

[0223] Industrial applicability

[0224] This invention relates to a substrate processing apparatus and a substrate processing method, and has industrial applicability.

Claims

1. A substrate processing apparatus, wherein, have: A processing tank is used to store the processing solution and immerse the substrate. A bubble supply pipe has multiple openings for supplying gas to the treatment liquid to form bubbles; A gas supply pipe supplies gas to the bubble supply pipe; The physical quantity detection unit detects physical quantities caused by the state of the bubble supply pipe through the gas supply pipe; as well as The determination unit determines the state of the plurality of openings based on the physical quantities. The physical quantity detection unit includes: A pressure gauge is used to detect the pressure in the gas supply pipe, and A regulating valve controls the flow rate of the gas supplied to the gas supply pipe; The physical quantities represent the pressure in the gas supply pipe and the opening degree of the regulating valve. When processing the substrate, the regulating valve supplies gas at a first flow rate to the gas supply pipe. The determination unit determines the state of the plurality of openings based on the opening degree when the gas at the first flow rate is supplied to the gas supply pipe, and... The determination unit determines the state of the plurality of openings based on the pressure in the gas supply pipe when a second flow rate of gas, which is greater than the first flow rate, is supplied to the gas supply pipe.

2. The substrate processing apparatus as claimed in claim 1, wherein, The determination unit compares the physical quantity detected at the first time, i.e., the reference physical quantity, with the physical quantity detected at the second time, i.e., the detected physical quantity, to determine the state of the plurality of openings. The first time is different from the second time.

3. The substrate processing apparatus as claimed in claim 2, wherein, The first time refers to the time before the substrate is processed. The second time represents the time after the substrate has been processed. The determination unit determines whether the state of the plurality of openings is abnormal based on the difference between the reference physical quantity and the detected physical quantity.

4. A substrate processing method, wherein a processing solution is used to process the substrate, wherein, Include: The process of supplying gas to a bubble supply pipe having multiple openings via a gas supply pipe, and supplying the gas to the treatment liquid to form bubbles; The process of detecting physical quantities caused by the state of the gas supply pipe via the gas supply pipe; and The process of determining the state of the plurality of openings based on the physical quantity. The physical quantities represent the pressure in the gas supply pipe and the opening degree of the regulating valve. In the process of determining the state, The state of the plurality of openings is determined based on the opening degree when gas at a first flow rate is supplied to the gas supply pipe, and The state of the plurality of openings is determined based on the pressure in the gas supply pipe when a second flow rate of gas, which is greater than the first flow rate, is supplied to the gas supply pipe.

5. The substrate processing method as described in claim 4, wherein, In the process of determining the state, the state of the plurality of openings is determined by comparing the physical quantity detected at a first time (i.e., the reference physical quantity) with the physical quantity detected at a second time (i.e., the detected physical quantity). The first time is different from the second time.

6. The substrate processing method as described in claim 5, wherein, The first time refers to the time before the substrate is processed. The second time represents the time after the substrate has been processed. In the process of determining the state, the state of the plurality of openings is determined to be abnormal based on the difference between the reference physical quantity and the detected physical quantity.

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