Semiconductor structure with hybrid stacked cells and electronic device

Abstract

The present application relates to a semiconductor structure, comprising: k filters, k being a natural number not less than 2, the k filters respectively comprising M i individual acoustic resonators, and the M i individual acoustic resonators comprising (M i -1) / n resonator stacked units, wherein i is an integer from 1 to k, M i is a natural number not less than 3, and n is one of the common divisors of the number set consisting of M i -1, wherein: the component comprises an antenna port and a plurality of other ports, the k filters are all connected with the antenna port; in each resonator stacked unit, the n resonators are stacked with each other; and each remaining one resonator in the k filters is a single resonator, and all the single resonators are stacked with each other to form a mixed stacked unit, and at least one single resonator is a resonator not adjacent to the other ports. The at least one single resonator can be adjacent to the antenna port. The present application also relates to an electronic device.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to the field of semiconductor, and in particular to a semiconductor structure and an electronic device having the same. BACKGROUND

[0002] With the rapid development of today's wireless communication technology, the application of small portable terminal devices is increasingly widespread, and thus the demand for high-performance, small-size radio frequency front-end modules and devices is increasingly urgent. In recent years, filter devices such as filters and duplexers based on film bulk acoustic resonators (FBAR) are increasingly favored by the market. On the one hand, they have excellent electrical properties such as low insertion loss, steep transition characteristics, high selectivity, high power capacity, and strong electrostatic discharge (ESD) resistance. On the other hand, they are small in size and easy to integrate.

[0003] However, there is a need to further reduce the size of filter devices in reality. In addition, in existing designs, bulk acoustic resonators are combined in series and in parallel to form a filter, which requires multiple resonators to be formed on a substrate, with each resonator being separate at different horizontal positions on the substrate and being connected by horizontal metal leads, as shown in FIG. 1. Figure 1 As shown in FIG. 1, the top electrode 104 of the resonator 100 is connected to the bottom electrode 102 of the resonator 200 through the conductive via 10. In order to ensure electrical signal transmission and manufacturing process limitations, the connection width of the conductive via 10 and the top electrode 104 of the resonator 100, the width of the conductive via 10, the width of the top electrode 104 of the resonator 100, and the width of the bottom electrode 102 of the resonator 200 all have certain requirements, and the total length is generally greater than 5 μm. This leads to a large electrical loss introduced by the connection line, especially for high-frequency resonators, which can worsen the insertion loss by more than 0.1 dB when the electrode thickness is less than 1000 A. SUMMARY

[0004] To alleviate or solve at least one aspect of the above problems in the prior art, the present application is proposed.

[0005] According to an aspect of an embodiment of the present application, a semiconductor structure is provided, comprising:

[0006] k filters, k being a natural number not less than 2, the k filters respectively comprising M i bulk acoustic resonators, and the M i bulk acoustic resonators comprising (M i -1) / n resonator stack units, wherein i is an integer from 1 to k, M i is a natural number not less than 3, and n is M i-1 constitutes one of the common divisors of the set of numbers, wherein:

[0007] The assembly comprises an antenna port and a plurality of other ports, the k filters are each connected to the antenna port;

[0008] In each resonator stacking unit, the n resonators are stacked on each other; and

[0009] The remaining one resonator in each of the k filters is a single resonator, and all the single resonators are stacked on each other to form a hybrid stacking unit, at least one single resonator is a resonator not adjacent to the other ports.

[0010] Embodiments of the present application also relate to a semiconductor structure comprising:

[0011] k filters, k is a natural number not less than 2, the k filters comprise a first filter and a second filter, the first filter comprises M1 bulk acoustic wave resonators, the second filter comprises M2 bulk acoustic wave resonators, M1 = 3p + 1, M2 = 3q + 2, wherein p and q are natural numbers, wherein:

[0012] The 3p resonators in the first filter form p resonator stacking units, and the 3q resonators in the second filter form q resonator stacking units, each resonator stacking unit comprises 3 stacked resonators;

[0013] The assembly comprises an antenna port and other ports, the first filter and the second filter are each connected to the antenna port;

[0014] The remaining one resonator of the first filter and / or one of the remaining two resonators of the second filter is not adjacent to the other ports, and the remaining one resonator of the first filter and the remaining two resonators of the second filter are stacked on each other to form a hybrid stacking unit.

[0015] Embodiments of the present application also relate to an electronic device comprising the above semiconductor structure. BRIEF DESCRIPTION OF DRAWINGS

[0016] The following description and drawings can better help understand these and other features, advantages, and characteristics of various embodiments disclosed by the present application, in which the same reference signs always designate the same components, wherein:

[0017] Figure 1 is a schematic cross-sectional view of an electrical connection between two adjacent bulk acoustic wave resonators in a prior design;

[0018] Figure 2 is a schematic top view of a semiconductor structure according to an exemplary embodiment of the present application;

[0019] Figure 3A schematic cross-sectional view of a bulk acoustic wave resonator taken along the line A-A' in Figure 2

[0020] Figure 3B schematic cross-sectional view of a bulk acoustic wave resonator taken along the line B-B' in Figure 2

[0021] Figure 3C schematic cross-sectional view of a bulk acoustic wave resonator taken along the line C-C' in Figure 2

[0022] Figure 3D schematic cross-sectional view of a bulk acoustic wave resonator taken along the line C-C' in Figure 3A Figure 1

[0023] Figure 3E-3G schematic cross-sectional view of a bulk acoustic wave resonator taken along the line C-C' in Figure 2

[0024] Figure 4A schematic view of a filter comprising 5 bulk acoustic wave resonators;

[0025] Figure 4B schematic cross-sectional view of a filter in Figure 4A

[0026] Figure 5 schematic topological view of a duplexer, wherein each filter is having 3 series bulk acoustic wave resonators and 2 parallel bulk acoustic wave resonators;

[0027] Figure 6 schematic topological view of a duplexer in Figure 5

[0028] Figure 7A 7B schematic cross-sectional view of a layout arrangement in Figure 6 Figure 7A Figure 7B schematic cross-sectional view of a layout arrangement in Figure 7A Figure 7B ​​​​​​​​In one of the die, the remaining four resonators of the other filter are arranged;

[0029] Figure 8 schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 7A and 7B schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application;

[0030] Figure 9 schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 5 schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 7A and 7B schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 5 schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application;

[0031] Figure 10A schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 10B schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 5 schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application;

[0032] Figure 11A schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; 11B schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 10A schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 11A schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 11B schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application;

[0033] Figure 12 schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 11A and 11B schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application;

[0034] Figure 13 schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 5 schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 11A and 11B schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 5 schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application;

[0035] Figure 14 schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; 15 schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; Figure 5 schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application; schematic diagram showing the arrangement of resonators of a duplexer according to an exemplary embodiment of the present application;

[0036] Figure 16 Fig. 3 is a cross-sectional view of a resonator stack unit according to an exemplary embodiment of the present application, showing a specific structure of the resonator stack unit, in which the upper and lower resonator active areas are acoustically isolated by a cavity; Figure 16 In the left side of Fig. 3, the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically isolated from each other, and in the right side of Fig. 3, the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other;

[0037] Figure 17A-17G Fig. 4 is a structural schematic view of a manufacturing process of a resonator stack unit according to an exemplary embodiment of the present application. DETAILED DESCRIPTION

[0038] The technical solutions of the present application will be further described below by way of examples in conjunction with the accompanying drawings. In the description, identical or similar reference numerals indicate identical or similar components. The following description of the embodiments of the present application with reference to the accompanying drawings is intended to explain the general inventive concept of the present application, and should not be understood as a limitation of the present application. The following description is only a part of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art belong to the scope of protection of the present application.

[0039] The following is the description of the reference numerals in the present application:

[0040] 11, 21: electrode external lead of the top electrode of the upper resonator.

[0041] 12, 22: electrode external lead of the bottom electrode of the upper resonator.

[0042] 13, 23: electrode external lead of the top electrode of the lower resonator.

[0043] 14, 24: electrode external lead of the bottom electrode of the lower resonator.

[0044] 401: electrode external lead. The above electrode external leads are connected to the corresponding electrodes.

[0045] S: substrate, which can be selected from single crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond, etc.

[0046] 101, 201: acoustic mirror, the acoustic mirror 101 can be a cavity, or can be a Bragg reflection layer or other equivalent form, and the acoustic mirror 201 is a cavity and is also an acoustic decoupling layer.

[0047] 102, 202: bottom electrode, which can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a composite of the above metals or an alloy thereof, etc.

[0048] 103, 203: Piezoelectric layer, which can be a single-crystal piezoelectric material, such as single-crystal aluminum nitride, single-crystal gallium nitride, single-crystal lithium niobate, single-crystal lead zirconate titanate (PZT), single-crystal potassium niobate, single-crystal quartz film, or single-crystal lithium tantalate, etc. It can also be a polycrystalline piezoelectric material (as opposed to single-crystal, a non-single-crystal material), such as polycrystalline aluminum nitride, zinc oxide, PZT, etc. It can also be a rare earth element containing a certain atomic ratio of the above materials. The doped material can be, for example, doped aluminum nitride, which contains at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.

[0049] 104, 204: Top electrode, whose material can be the same as the bottom electrode. Materials can include molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or composites or alloys of the above metals. The top and bottom electrodes are generally made of the same material, but they can also be different.

[0050] 105, 205: Passivation layer, generally a dielectric material, such as silicon dioxide, aluminum nitride, silicon nitride, etc.

[0051] 106, 206: Disconnected structure.

[0052] Figure 2 This is a schematic top view of a semiconductor structure according to an exemplary embodiment of the present invention. Figure 2 In the diagram, line A-A' corresponds to the cross-section through the non-electrode connection terminals of the top and bottom electrodes of the upper and lower resonators, line B-B' corresponds to the cross-section through the electrode connection terminals of the bottom and top electrodes of the lower resonator, and line C-C' corresponds to the cross-section through the electrode connection terminals of the bottom and top electrodes of the upper resonator.

[0053] Figure 3A For an exemplary embodiment of the present invention, along Figure 2 A schematic cross-sectional view of a bulk acoustic resonator obtained by the A-A' line.

[0054] Although not shown, a process layer can also be disposed on the top electrode of the resonator. This process layer can cover the top electrode and can function as a mass conditioning load or a passivation layer. The passivation layer can be made of a dielectric material, such as silicon dioxide, aluminum nitride, or silicon nitride.

[0055] In addition, Figure 3AIn the illustrated structure, two resonators are formed at the same horizontal position of the substrate S, and the spatial positions of the two resonators in the vertical direction or in the thickness direction of the substrate are different.

[0056] As will be understood by those skilled in the art, three resonators or more resonators can also be stacked. For example, the semiconductor structure includes a first resonator, a second resonator and a third resonator stacked in the thickness direction, the top electrode 104 of the first resonator has an acoustic decoupling layer in the form of the cavity 201 between the bottom electrode 202 of the second resonator, the top electrode 204 of the second resonator has another acoustic decoupling layer between the bottom electrode of the third resonator, and the other acoustic decoupling layer constitutes an acoustic mirror of the third resonator.

[0057] In Figure 3A In the illustrated structure, two resonators are shown, the upper resonator and the lower resonator, wherein the effective area of the upper resonator is the overlapping area of the top electrode 204, the piezoelectric layer 203, the bottom electrode 202 and the cavity 201 in the thickness direction. The effective area of the lower resonator is the overlapping area of the cavity 201, the top electrode 104, the piezoelectric layer 103, the bottom electrode 102 and the acoustic mirror 101 in the thickness direction.

[0058] Correspondingly, in the case where the first resonator, the second resonator and the third resonator are stacked, the effective area of the uppermost third resonator is the overlapping area of its top electrode, piezoelectric layer, bottom electrode and the other acoustic decoupling layer in the thickness direction, the effective area of the intermediate second resonator is the overlapping area of the other acoustic decoupling layer, top electrode 204, piezoelectric layer 203, bottom electrode 202 and cavity 201 in the thickness direction, and the effective area of the lowermost first resonator is the overlapping area of the cavity 201, top electrode 104, piezoelectric layer 103, bottom electrode 102 and cavity 101 in the thickness direction.

[0059] In Figure 3A In the illustrated structure, the upper resonator and the lower resonator are acoustically separated by the cavity 201, i.e. the cavity 201 constitutes an acoustic decoupling layer between the upper and lower resonators, thereby also avoiding the problem of acoustic coupling that can be caused by the adjacent stacking of the upper and lower resonators.

[0060] In Figure 3A In the illustrated structure, because a plurality of resonators are formed at the same horizontal position of the substrate S, and the spatial positions of the plurality of resonators in the vertical direction or in the thickness direction of the substrate are different, the area of the filter can be greatly reduced. For example, in the case where two resonators are also provided, the area P1 shown in Figure 1 can be reduced to the area P2 shown in Figure 3A .

[0061] As Figure 3AAs shown, the bottom electrode 202 of the upper resonator and the top electrode 104 of the lower resonator are electrically connected to each other at the non-electrode connecting end. In the case where the bottom electrode of the upper resonator is directly connected to the top electrode of the lower resonator, the bottom electrode of the upper resonator is directly electrically connected to the top electrode of the lower resonator, and the length of the connecting portion is shorter than the length of the transmission path of the upper resonator and the length of the transmission path of the lower resonator. Figure 1 The length of the transmission path formed by the bottom electrode of the upper resonator and the top electrode of the lower resonator is shortened, that is, the transmission path is shortened, and the transmission loss is reduced. In addition, the thickness of the metal through which the electrical signal is output is the sum of the thickness of the top electrode of the lower resonator and the thickness of the bottom electrode of the upper resonator, and the transmission loss is further reduced. By reducing the electrical loss, the insertion loss of the final filter is optimized. As shown in FIG. 3A, the length of the transmission path formed by the bottom electrode of the upper resonator and the top electrode of the lower resonator is d, which can be less than 5 μm. Figure 3A As shown, the length of the transmission path formed by the bottom electrode of the upper resonator and the top electrode of the lower resonator is d, which can be less than 5 μm.

[0062] With the structure of, for example, FIGS. 3A-3C, because the current transmission path to the lower resonator is shortened, for example, can be less than 5 μm, the transmission loss is reduced, and the thickness of the top electrode 104 of the lower resonator and the thickness of the bottom electrode 202 of the upper resonator can be thinned, which is beneficial to further miniaturization of the resonator. In the case where the bottom electrode of the upper resonator is directly connected to the top electrode of the lower resonator, the thickness of the electrode film layer of the bottom electrode of the upper resonator and the thickness of the electrode film layer of the top electrode of the upper resonator can be further reduced while reducing the current transmission path loss to the bottom electrode of the upper resonator and the current transmission path loss to the top electrode of the lower resonator. Accordingly, in the case where the resonant frequency of the lower resonator is greater than 0.5 GHz, the thickness of the top electrode 104 is less than and / or in the case where the resonant frequency of the upper resonator is greater than 0.5 GHz, the thickness of the bottom electrode 202 is less than In further embodiments, in the case where the resonant frequency of the lower resonator is greater than 3 GHz, the thickness of the top electrode 104 can be designed to be less than and / or in the case where the resonant frequency of the upper resonator is greater than 3 GHz, the thickness of the bottom electrode 202 of the upper resonator can also be less than As can be understood, in the present application, the thinning of the thickness of the electrode refers to the thinning of the thickness of the portion of the electrode within the effective area of the resonator.

[0063] Figure 3D For example, FIG. 4 shows the insertion loss curve of the structure of Figure 3A relative to the insertion loss curve of the structure of Figure 1 . FIG. 5 shows the insertion loss curve of the structure of Figure 3D after the application of the structure of Figure 3A for the 3.5G frequency band, and the insertion loss curve (dashed line) of the conventional structure of Figure 1 . It can be seen that after the application of the structure of Figure 3A , the insertion loss is improved by about 0.1 dB due to the reduction of electrode loss.

[0064] Figure 3B a schematic cross-sectional view of a bulk acoustic resonator taken along the line B-B' in FIG. 10A according to an exemplary embodiment of the present application, Figure 2 Figure 3C a schematic cross-sectional view of a bulk acoustic resonator taken along the line C-C' in FIG. 10B according to an exemplary embodiment of the present application. Figure 2 Figure 3B 3C In FIGS. 10A and 10B, the top electrode of the lower resonator and the bottom electrode of the upper resonator are electrically connected to each other around the entire cavity 201 in the circumferential direction.

[0065] For the case where the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other, in the structure shown in FIG. 10A, both the non-electrically connected ends and the electrically connected ends of the bottom electrode of the upper resonator and the top electrode of the lower resonator are connected to each other, i.e., electrically connected around the entire circumference of the cavity 201. However, there can be other connection modes in addition to the connection mode shown in FIG. 10A. For example, the bottom electrode of the upper resonator and the top electrode of the lower resonator can be electrically connected to each other only at the non-electrically connected ends; or the bottom electrode of the upper resonator and the top electrode of the lower resonator can be electrically connected to each other only at the electrically connected ends; or the bottom electrode of the upper resonator and the top electrode of the lower resonator can be electrically connected to each other only at all or part of the non-electrically connected ends. These are all within the scope of the present application. Figure 3A-3C Figure 3A-3C The right side view of FIG. 10B shows a specific example in which the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other. As shown in the right side cross-sectional view of FIG. 10B, the top electrode 104 covers the piezoelectric layer 103, and the bottom electrode 202 is connected to the top electrode 104 at both the electrically connected ends and the non-electrically connected ends. In the right side view of FIG. 10B, the electrically connected ends of the bottom electrode 202 cover the electrically connected ends of the top electrode 104, and the non-electrically connected ends of the bottom electrode 202 cover the non-electrically connected ends of the top electrode 104.

[0066] For the case where the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other, in the structure shown in FIG. 10A, both the non-electrically connected ends and the electrically connected ends of the bottom electrode of the upper resonator and the top electrode of the lower resonator are connected to each other, i.e., electrically connected around the entire circumference of the cavity 201. However, there can be other connection modes in addition to the connection mode shown in FIG. 10A. For example, the bottom electrode of the upper resonator and the top electrode of the lower resonator can be electrically connected to each other only at the non-electrically connected ends; or the bottom electrode of the upper resonator and the top electrode of the lower resonator can be electrically connected to each other only at the electrically connected ends; or the bottom electrode of the upper resonator and the top electrode of the lower resonator can be electrically connected to each other only at all or part of the non-electrically connected ends. These are all within the scope of the present application. Figure 16 Figure 16 Figure 16

[0067] For the case where the resonator effective area maximum width is greater than the cavity height, the upper and lower resonators can come into contact within the cavity due to bending or the like. For example, when the resonator effective area maximum width is greater than 100 μm, in order to ensure that the cavity 201 is formed completely within the effective area of the upper and lower resonators, the stress of the lower resonator can be controlled so as to bend in the direction of the lower air cavity, and / or the stress of the upper resonator can be controlled so as to bend in the direction of the upper air cavity, so that the top electrode of the lower resonator is concave downward, and / or the bottom electrode of the upper resonator is convex upward.

[0068] ​​​​​​​​As mentioned above, the stress can be controlled to reduce the probability of the upper and lower resonators contacting each other, but when the resonator area is large, a support member can be added, which is in contact with the top or top electrode of the lower resonator, and the height of the support member is less than or equal to the height of the cavity, less than or equal to meaning that the top end of the support member is in contact with the bottom or bottom electrode of the upper resonator, and less than the height of the cavity means that the top end of the support member is not in contact with the upper resonator, and when the local thickness of the cavity is reduced due to bending of the resonator, the top end of the support member is in contact with the upper resonator, thus providing support.

[0069] The cavity 201 is used as an acoustic decoupling layer, which can achieve complete acoustic decoupling of the upper and lower resonators, so the performance of the resonator is better. Further, in the case where the cavity 201 is directly surrounded by the top electrode 104 of the lower resonator and the bottom electrode 202 of the upper resonator (the structure defining the position of the cavity in other embodiments also includes the piezoelectric layer of the upper resonator and / or the lower resonator), for example, the structure shown in FIGS. 4A, 4B and 16, the overall structure is stable and reliable, and the processing technology is simple. Figure 3A-3C

[0070] As those skilled in the art can understand, the cavity 201 is arranged between the bottom electrode of the upper resonator and the top electrode of the lower resonator in the thickness direction of the resonator, which not only includes the case where at least part of the upper and lower boundaries of the cavity is defined by the lower surface of the bottom electrode of the upper resonator and the upper surface of the top electrode of the lower resonator, but also includes the case where the upper surface of the top electrode of the lower resonator is provided with a process layer (such as a passivation layer), so that at least part of the lower boundary of the cavity 201 is defined by the process layer. These are all within the scope of the present application.

[0071] In Figure 3A-3C , FIG. 4B, etc., the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other, but the present application is not limited thereto. In the two stacked bulk acoustic wave resonators, the bottom electrode of the upper resonator and the top electrode of the lower resonator can also be electrically isolated from each other, for example, see the left side view of FIG. 4C. Figure 16

[0072] Figure 3E is a schematic cross-sectional view of a bulk acoustic wave resonator taken along the A-A' line in FIG. 6B according to an exemplary embodiment of the present application, in which Figure 2 the bottom electrode 202 of the upper resonator and the top electrode 104 of the lower resonator are not electrically connected, and the non-electrode connection end of the bottom electrode 202 of the upper resonator is outside the top electrode 104 of the lower resonator and is arranged on the upper surface of the piezoelectric layer 103 of the lower resonator. Figure 3E

[0073] Figure 3F is a schematic cross-sectional view of a bulk acoustic wave resonator taken along the A-A' line in FIG. 6B according to an exemplary embodiment of the present application, in which Figure 2 ​​​The schematic cross-sectional view of the bulk acoustic resonator taken by line A-A' shows that the non-electrode connection terminal of the bottom electrode 202 of the upper resonator is not electrically connected to the non-electrode connection terminal of the top electrode 104 of the lower resonator. A portion of the end of the non-electrode connection terminal of the bottom electrode of the upper resonator is disposed on the upper surface of the piezoelectric layer 103 of the lower resonator (see Figure 103). Figure 3F (Left side of the image) while the other end is located inside the boundary of the shared cavity in the lateral direction (see image). Figure 3F (The right side of the middle).

[0074] Figure 3G For an exemplary embodiment of the present invention, along Figure 2 The schematic cross-sectional view of the bulk acoustic resonator taken by the C-C' line shows that the non-electrode connection terminal of the bottom electrode 202 of the upper resonator is not electrically connected to the non-electrode connection terminal of the top electrode 104 of the lower resonator, and the electrode connection terminal of the bottom electrode 202 of the upper resonator is not electrically connected to the electrode connection terminal of the top electrode 104 of the lower resonator. More specifically, for example, refer to... Figure 16 The left-side cross-sectional view. The top electrode 104 is located in the first electrode layer. Figure 16 In the left-hand view, the first electrode layer includes a top electrode 104 and a non-top electrode layer located outside the non-electrode connection terminal of the top electrode 104 via a disconnect structure 106. Figure 16 (The left side of the broken structure 106). Figure 16 In the middle, the bottom electrode 202 is located in the second electrode layer, such as Figure 16 As shown in the left-hand view, the second electrode layer includes a bottom electrode 202 and a non-bottom electrode layer located outside the non-electrode connection terminal of the bottom electrode 202, electrically isolated from the non-electrode connection terminal of the bottom electrode 202 via a disconnection structure 206. Figure 16 (The right side of the disconnected structure 206). Figure 16 In the left-hand view, the electrode connection end of the bottom electrode 202 covers the non-top electrode layer, and the non-bottom electrode layer covers the electrode connection end of the top electrode 104.

[0075] Figure 4A This is a schematic diagram of a filter that includes five sonic resonators, showing three series resonators Se1-Se3 and two parallel resonators Sh1-Sh2. The series and parallel resonators have different resonant frequencies, thus forming a bandpass filter. Figure 4B This is an exemplary illustration of an exemplary embodiment of the present invention. Figure 4A A schematic cross-sectional view of the resonator arrangement in the filter. Figure 4AThe 3-2 structure is merely illustrative; the number of series and parallel resonators is not limited. For duplexers or multiplexers, as those skilled in the art will understand, multiple, for example... Figure 4A The structures are connected in parallel and require necessary passive components for matching.

[0076] Figure 4B In the diagram, the series resonator Se2 is located above the parallel resonator Sh1, and the series resonator Se3 is located above the parallel resonator Sh2.

[0077] To improve the stability of the process, in Figure 4B In this example, the series resonator Se1 is placed above a non-functional material with the height of a parallel resonator, ensuring that Se1 is on the same plane as the other series resonators Se2 and Se3. Here, the "non-functional material with the height of a parallel resonator" corresponds to a redundant resonator. For example... Figure 4B As shown, a redundant resonator is arranged below the series resonator Se1 on the left side. This redundant resonator also has a redundant top electrode, a redundant piezoelectric layer, and a redundant bottom electrode. The redundant top electrode, redundant piezoelectric layer, and redundant bottom electrode of the redundant resonator layer are arranged in the same layer as the top electrode 104, piezoelectric layer 103, and bottom electrode 102, respectively. However, as a redundant resonator, it does not have the function of a resonator, for example, in... Figure 4B In the diagram shown, the redundant resonator does not have an acoustic mirror cavity below it. Alternatively, the redundant resonator can be made to function as a resonator by de-energizing the redundant top or bottom electrode, or by connecting the redundant top and bottom electrodes together.

[0078] exist Figure 4B In the resonator arrangement of the single filter shown, the characteristics of the stacked resonator are fully utilized, and the bottom electrode of the upper resonator is interconnected with the top electrode of the lower resonator.

[0079] exist Figure 4B In the diagram, 401 represents the external lead of the electrode, for example, in... Figure 4B On the right side, the external lead 401 is electrically connected to both the top electrode of the upper resonator of the middle stacked unit and the top electrode of the lower resonator of the right stacked unit. It should be noted that the arrangement of the electrode lead 401 is merely exemplary, and other methods can also be used to achieve the electrical connection of the resonator electrodes.

[0080] exist Figure 4B In the case of two resonators stacked together, when the number of resonators is odd, an additional redundant structure (dummy) is created. Figure 4BThe structure shown reduces the area occupied by the original five resonators to the area occupied by three resonators. Redundancy is actually intended to ensure the manufacturability of the chip, for example, ensuring that the surface where the series resonator Se1 is located is flat when manufacturing it. However, it still wastes space on the chip, especially for duplexers or even multiplexers, where each die has a redundant structure, resulting in even more wasted area or space.

[0081] Figure 5 The diagram shows an exemplary topology of a duplexer, where each filter consists of three series-connected solid acoustic resonators and two parallel-connected solid acoustic resonators. Similarly, the 3-2 structure is merely an example and is not intended to limit the scope of this patent. Additionally, this patent may also include cases involving multiplexers. Figure 5 Take a duplexer as an example. When two or more filters are connected in parallel to form a duplexer or multiplexer, the position of the redundant structure can be replaced by the resonator of other branches, thus avoiding the waste of space.

[0082] See attached document for further details. Figure 5-17G In the illustrated embodiments, in order to eliminate redundant structures, in a duplexer or multiplexer, when there are two or more dies with an odd number of resonators and an even number of resonators in each resonator stack unit (it should be noted that the number of resonators can also be even and the number of resonators in each resonator stack unit can be odd), one or more resonators can be transferred to another die. In this way, redundant structures can be eliminated, that is, the original position of the redundant structure is filled by the resonators of the other die. This makes full use of the chip space and area, thereby further reducing the chip size when resonators are stacked.

[0083] However, there are isolation requirements between different dies. When the resonator of one die is transferred to another die, a coupling path is created between the two dies, which is detrimental to the isolation between them. This will be discussed later. Figure 9 and Figure 13 This can be seen from the text.

[0084] Later in this specification, for cases where the resonator of one filter needs to be stacked with the resonator of another filter (i.e., hybrid stacking), a scheme that minimizes the impact on the isolation of the two filters will be described. This is achieved by selecting different resonators from the two filters for hybrid stacking to reduce the adverse effects of hybrid stacking on isolation. For example, in embodiments of this invention, using... Figure 10A-12 The solution in the middle is to replace Figure 6-8 The proposed solution aims to reduce the adverse effects of hybrid stacking on isolation.

[0085] Furthermore, as mentioned later, in this invention, different resonator stacking units can be placed on different substrates to further reduce the chip size.

[0086] Figure 6 To show Figure 5 An exemplary topology diagram of the distribution of the resonator on two dies in a duplexer. Figure 6 This is explained as a method to eliminate redundant structures by transferring the resonator from one branch to another die. Figure 6 In the diagram, the solid and dashed lines represent resonators located on different dies. It can be seen that... Figure 6 In the diagram, the five resonators at the top and one at the bottom are on one die, while the other four resonators at the bottom are on another die. The naming of each resonator and... Figure 5 Same.

[0087] Figure 7A and 7B They are shown separately. Figure 6 The image shows a cross-sectional view of the layout after the resonators on the two dies have been transferred and redistributed. Figure 7A In this configuration, six resonators are mounted on a single die. Figure 7A In this example, the series resonator Se3-1 of one filter is superimposed on the series resonator Se3-2 of another filter; the resonator Se2-1 of one filter is superimposed on the resonator Sh1-1; and the resonator Se2-1 is superimposed on the resonator Sh2-1. Figure 7B In this process, the remaining four resonators of the other filter are disposed on a die, namely, resonators Se1-2 and Sh1-2 belonging to the other filter are stacked together, and resonators Se2-2 and Sh2-2 are stacked together.

[0088] Figure 8 For example Figure 7A and 7B A schematic diagram of the arrangement of resonators in a duplexer.

[0089] from Figure 7A-8 It can be seen that, Figure 5 After the resonators in the middle are rearranged, in Figure 4B The redundant structures required in the process are eliminated, compared to the need to set up a redundant structure in each filter. Figure 7A-8 After eliminating redundant structures, the proposed solution further reduced... Figure 5 The area of ​​the duplexer shown.

[0090] In practical applications, it is hoped that Figure 5The fewer coupling paths between ports 2 and 3, the better; that is, the higher the isolation, the better. However, the hybrid stacking arrangement of the two filters will affect the isolation between ports 2 and 3.

[0091] Figure 9 It shows Figure 5 The frequency insertion loss curves for the stacked and non-stacked configurations are shown in the figure, where the solid line represents the frequency insertion loss curve. Figure 7A and 7B The frequency insertion loss curve for the stacked arrangement is shown, while the dashed line represents... Figure 5 There is no frequency insertion loss curve for overlapping operations. It can be seen that... Figure 9 In the case of two filters not being stacked, Figure 7A and 7B The overlay scheme shown in the image exhibits a decrease in isolation. From... Figure 9 As can be seen, the isolation deteriorates, and the roll-off worsens by about 10dB at around 1.82GHz.

[0092] Figure 10A and Figure 10B It shows Figure 5 Two exemplary topological diagrams showing the distribution of the resonator on two dies in a duplexer. Figure 10A and Figure 10B This is explained as a method to eliminate redundant structures by transferring the resonator from one branch to another die. Figure 10A and 10B In the diagram, the solid and dashed lines represent resonators located on different dies. It can be seen that... Figure 10A In the diagram, the five resonators at the top and one at the bottom are on one die, while the other four resonators at the bottom are on another die. The naming of each resonator and... Figure 5 Same.

[0093] Figure 11A and 11B They are shown separately. Figure 10A The image shows a cross-sectional view of the layout after the resonators on the two dies have been transferred and redistributed. Figure 11A In this configuration, six resonators are mounted on a single die. Figure 11A In this example, the series resonator Se1-1 of one filter is superimposed on the series resonator Se1-2 of another filter; the resonator Se2-1 of one filter is superimposed on the resonator Sh1-1; and the resonator Se3-1 is superimposed on the resonator Sh2-1. Figure 11B In the middle, the remaining four resonators of the other filter are set on a die, that is, resonator Se2-2 belonging to the other filter is stacked with resonator Sh1-2, and resonator Se3-2 is stacked with resonator Sh2-2.

[0094] Figure 12 An illustration of an exemplary embodiment of the present invention Figure 11A and 11B A schematic diagram of the arrangement of resonators in a duplexer.

[0095] from Figure 11A-12 It can be seen that, Figure 5 After the resonators in the middle are rearranged, in Figure 4B The redundant structures required in the process are eliminated, compared to the need to set up a redundant structure in each filter. Figure 11A-12 After eliminating redundant structures, the proposed solution further reduced... Figure 5 The area of ​​the duplexer shown.

[0096] Figure 13 It shows Figure 5 The frequency insertion loss curves of the duplexer in the stacked and non-stacked configurations are shown in the figure, where the solid line represents the frequency insertion loss curve. Figure 11A and 11B The frequency insertion loss curve for the stacked arrangement is shown, while the dashed line represents... Figure 5 There is no frequency insertion loss curve for overlapping operations. It can be seen that... Figure 13 In the case of two filters not being stacked, Figure 11A and 11B The overlay scheme shown in the image exhibits a decrease in isolation. From... Figure 13 As can be seen, the isolation deteriorates, and the roll-off worsens by about 5dB at around 1.82GHz.

[0097] visible, Figure 11A and 11B The proposed solution, compared to Figure 7A and 7B The proposed scheme achieves the beneficial effects of higher isolation and less roll-off degradation.

[0098] like Figure 10A-11B As shown, the resonator used for mixing and stacking in the upper filter is Se1-1, and the resonator used for stacking in the lower filter is Se2-1. Both are close to antenna port 1 and far from port 2 or 3.

[0099] Based on the above, in the hybrid stacking of the two filters, the resonators far away from ports 2 and 3 should be used preferentially for stacking, and the use of resonators Se1-3 and Se2-3 should be avoided as much as possible.

[0100] exist Figure 10A-12In the structure shown, all resonators are placed on the same substrate or wafer; however, the invention is not limited to this. For example, by also fabricating resonators on another packaging substrate of the filter (similar to the original idea of ​​fabricating series and parallel connections on two substrates respectively, except that here the resonator units are stacked as basic units), some resonators can be fabricated on one substrate, and the other resonators can be fabricated on another substrate used for packaging, thereby further reducing the area of ​​the filter device.

[0101] Figure 14 and 15 Different exemplary embodiments according to the present invention are shown respectively. Figure 5 The topological diagram of the resonator distribution on the two dies in a duplexer. Figure 14 and 15 In the diagram, thick and thin lines represent resonators fabricated on different substrates; thick lines indicate resonators on one substrate, while thin lines indicate resonators on another. Furthermore, in... Figure 14 and 15 In the diagram, solid and dashed lines represent the distribution of the resonator on different dies; solid lines indicate a resonator on one die, while dashed lines indicate a resonator on another die. In optional embodiments, the stacked structure and / or layer thickness of the resonator in one stacked unit on one substrate differs from the stacked structure and / or layer thickness of the resonator in one stacked unit on another substrate. The stacked structure here includes a sandwich structure formed by the bottom electrode, piezoelectric layer, and top electrode of the resonator, as well as other layered structures disposed within this sandwich structure, such as passivation layers or process layers. Each stacked structure includes multiple layers, which can be electrode layers, piezoelectric layers, passivation layers, etc.

[0102] Figure 16 This is a cross-sectional view illustrating an exemplary structure of a resonator stack unit according to an exemplary embodiment of the present invention, wherein the effective regions of the upper and lower resonators are acoustically isolated by cavities. Figure 16 On the left side, the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically isolated from each other; on the right side, the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other.

[0103] exist Figure 16 In the middle, the bottom electrode 202 of the upper resonator and the top electrode 104 of the lower resonator can be directly electrically connected, such as... Figure 16 As shown on the right; in addition, the bottom electrode 202 of the upper resonator and the top electrode 104 of the lower resonator can also be electrically isolated, such as... Figure 16 As shown in the left-hand view. This has already been explained. Figure 16 The electrode connections of the upper and lower resonators of the stacked resonator on the left side, and Figure 16The electrode connections of the upper and lower resonators of the stacked resonator on the right side are not described here.

[0104] Figure 16 The illustrated embodiments are relative to Figure 4B In the embodiments described, an additional type of stacked resonator or resonator stack unit is used in the resonator arrangement, where the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically isolated. Furthermore, when the resonant frequencies of the left and right filters differ by approximately 300MHz, the thicknesses of the film layers in the left and right filters can be different; that is, the upper and lower layers in the left and right filters may have two different film layer stack thicknesses. For example, for... Figure 16 Regarding the top electrode of the upper and middle resonators, the film thickness in the filter on the left side is greater than that in the filter on the right side.

[0105] In the above embodiments, the filter includes an odd number of resonators, but the present invention is not limited thereto and may also include an even number of resonators. When the filter includes an even number of resonators, if two resonators are stacked to form a resonator stacking unit, there is no need to set up the aforementioned redundant resonators. However, depending on the number of resonators in the resonator stacking unit, there may still be a problem of setting up redundant resonators.

[0106] In the above embodiments, the stacked resonator unit includes two resonators, but the present invention is not limited to this and may include more resonators. For example, when there are three resonators in the stacked resonator unit, the number of resonators in each filter may be 3n+1, where n is the number of resonator stacked units contained in the filter. Then, the remaining three resonators in the three filters can also form a hybrid stacked unit. Optionally, the number of resonators in some filters may be 3n+1, while the number of resonators in other filters may be 3n+2. The remaining one resonator and two resonators in each of the two filters can form a hybrid stacked unit.

[0107] In this invention, it should be noted that the semiconductor structure defined in the claims may include only the filter defined in the claims, or it may include other filters in addition to the filter defined in the claims.

[0108] In the above embodiments, for stacked resonators or resonator stacking units, there are two types: one where the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other, and the other where the bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically isolated from each other. See below for further details. Figure 17A-17G For illustrative purposes only Figure 16The diagram shows the manufacturing process of the structure, where the left side of each diagram corresponds to the bottom electrode of the upper resonator and the top electrode of the lower resonator being electrically isolated from each other, while the right side corresponds to the bottom electrode of the upper resonator and the top electrode of the lower resonator being electrically connected to each other.

[0109] Step 1: As Figure 17A As shown, the lower resonator is fabricated using a conventional FBAR process. The lower resonator includes a recess corresponding to the acoustic mirror cavity 101, in which a sacrificial material is disposed; a bottom electrode 102; a piezoelectric layer 103; a top electrode 104; and a passivation layer 105. If understood, the passivation layer 105 may be omitted. Furthermore, Figure 17A The acoustic mirror in the image can also take other forms. See also Figure 17A The top electrode 104 is covered with a piezoelectric layer 103.

[0110] Step 2: For electrically disconnected upper and lower resonators, the external leads of the top electrode 104 of the lower resonator and the bottom electrode 202 of the upper resonator need to be disconnected. For example... Figure 17B As shown, the disconnected structure 106 can be fabricated by photolithography and etching. The disconnected structure corresponds to an opening or a through hole (if understood, a through hole is a strip-shaped through hole).

[0111] Step 3: As Figure 17C As shown, a sacrificial layer (such as PSG (phosphosilicate glass), amorphous silicon, BSG (borosilicate glass), BPSG (borophosphosilicate glass), USG (US silicate glass), etc.) is deposited on the structure formed in step 2. To improve the quality of the film layer on the subsequent resonator, the deposited sacrificial material layer can be planarized using CMP (chemical mechanical polishing). Figure 17C In the middle, as shown on its left, sacrificial material fills the broken structure 106.

[0112] Step 4: As Figure 17D As shown, a patterning etching process is performed on the sacrificial material layer and the passivation layer of the lower resonator to expose the external leads of the top electrode of the lower resonator, so as to facilitate electrical connection with the external leads of the bottom electrode of the upper resonator. The patterned sacrificial material layer forms a sacrificial layer 301, which will eventually be removed to form a cavity 201 that acoustically isolates the upper and lower resonators.

[0113] Step 5: As Figure 17E As shown, in Figure 17D In the structure shown, an electrode metal layer for forming the bottom electrode 202 of the upper resonator is deposited using processes such as sputtering or evaporation. For Figure 17E The left-side upper and lower resonators are not electrically connected. The electrode metal layer corresponding to the bottom electrode 202 is patterned using photolithography and etching processes to form... Figure 17E The structure shown is in Figure 17EIn the left-hand diagram, the external leads of the bottom electrode 202 of the upper resonator and the top electrode 104 of the lower resonator are disconnected due to the disconnect structure 206. The disconnect structure 206 corresponds to an opening or through-hole (if understood, a through-hole is a strip-shaped through-hole). Figure 17E As can be seen, the top electrode 104 is part of the first electrode layer, and the bottom electrode 202 is part of the second electrode layer, with the second electrode layer covering the first electrode layer. At the non-electrode connection end of the top electrode 104, as shown in the figure... Figure 17E On the left side of the left figure, the electrode connection end of the bottom electrode 202 covers the first electrode layer, while the electrode connection end of the top electrode 104 is covered by the second electrode layer.

[0114] Step 6: As Figure 17F As shown, in Figure 17E The structure shown is used to deposit and pattern the piezoelectric layer 203, the top electrode 204, and the passivation layer 205 of the upper resonator.

[0115] Step 7: As Figure 17G As shown, the fabrication of the external electrode leads and the release of the sacrificial material layer are completed to form cavity 201 and acoustic mirror cavity 101.

[0116] It should be noted that, in this invention, each numerical range, except where explicitly stated not to include endpoint values, can be either an endpoint value or the median of each numerical range, and all of these are within the protection scope of this invention.

[0117] In this invention, "upper" and "lower" are relative to the bottom surface of the resonator's base. For a component, the side closer to the bottom surface is the lower side, and the side farther from the bottom surface is the upper side.

[0118] In this invention, "inner" and "outer" refer to the center of the effective region of the resonator (i.e., the center of the effective region) in the lateral or radial direction. The side or end of a component closer to the center of the effective region is called the inner side or inner end, while the side or end of the component farther from the center of the effective region is called the outer side or outer end. For a reference position, being inside the position means being between that position and the center of the effective region in the lateral or radial direction, while being outside the position means being farther from the center of the effective region in the lateral or radial direction than that position.

[0119] As those skilled in the art will understand, the bulk acoustic resonator according to the present invention can be used to form filters or electronic devices. These electronic devices include, but are not limited to, intermediate products such as RF front-ends and filtering / amplifying modules, as well as terminal products such as mobile phones, Wi-Fi devices, and drones.

[0120] Based on the above, the present invention proposes the following technical solution:

[0121] 1. A semiconductor structure, comprising:

[0122] There are k filters, where k is a natural number not less than 2, and each of the k filters includes M... i Individual acoustic resonator, and M i Individual acoustic resonators include (M) i -1) / n resonator stacking units, where i is an integer from 1 to k, M i Let n be a natural number not less than 3, and M be a number of M. i One of the common divisors of the set of numbers consisting of -1, where:

[0123] The component includes an antenna port and multiple other ports, and k filters are all connected to the antenna port;

[0124] In each resonator stacking unit, n resonators are stacked on top of each other; and

[0125] The remaining resonator in each of the k filters is a single resonator, and all the single resonators are stacked on top of each other to form a hybrid stacking unit. At least one single resonator is a resonator that is not adjacent to the other ports.

[0126] 2. According to the semiconductor structure described in 1, wherein:

[0127] The at least one individual resonator is adjacent to the antenna port.

[0128] 3. According to the semiconductor structure described in 1, wherein:

[0129] None of the individual resonators are adjacent to the other ports.

[0130] 4. According to the semiconductor structure described in 3, wherein:

[0131] All individual resonators are adjacent to the antenna port.

[0132] 5. The semiconductor structure according to 1, wherein:

[0133] The semiconductor structure includes a duplexer, where k is 2.

[0134] 6. The semiconductor structure according to 1, wherein:

[0135] The semiconductor structure includes a multiplexer, where k is not less than 3.

[0136] 7. A semiconductor structure, comprising:

[0137] There are k filters, where k is a natural number not less than 2. The k filters include a first filter and a second filter. The first filter includes M1 individual acoustic resonators, and the second filter includes M2 individual acoustic resonators. M1 = 3p + 1, M2 = 3q + 2, where p and q are natural numbers.

[0138] The 3p resonators in the first filter form p resonator stacking units, and the 3q resonators in the second filter form q resonator stacking units. Each resonator stacking unit includes 3 stacked resonators.

[0139] The component includes an antenna port and other ports, and both the first filter and the second filter are connected to the antenna port;

[0140] One of the remaining resonators of the first filter and / or one of the remaining two resonators of the second filter are not adjacent to the other ports, and the remaining one resonator of the first filter and the remaining two resonators of the second filter are stacked on top of each other to form a hybrid stacked unit.

[0141] 8. According to the semiconductor structure described in 7, wherein:

[0142] One of the remaining resonators of the first filter or one of the remaining two resonators of the second filter is adjacent to the antenna port.

[0143] 9. According to the semiconductor structure described in 7, wherein:

[0144] One of the remaining resonators of the first filter and one of the remaining two resonators of the second filter are adjacent to the antenna port.

[0145] 10. According to the semiconductor structure described in 9, wherein:

[0146] In the hybrid stacking unit, two resonators adjacent to the antenna port are stacked next to each other.

[0147] 11. According to the semiconductor structure described in 7, wherein:

[0148] The remaining resonator of the first filter and the remaining two resonators of the second filter are not adjacent to the other ports.

[0149] 12. The semiconductor structure according to 1 or 7, wherein:

[0150] The stacking units of the k filters are all disposed on the same substrate; or

[0151] The stacking units of the k filters are disposed on at least two substrates.

[0152] 13. According to the semiconductor structure described in 12, wherein:

[0153] The stacked units of the k filters are disposed on at least two substrates, and in the stacked units disposed on the two substrates, the layer thickness of the resonator in the stacked unit disposed on one substrate is different from the layer thickness of the resonator in the stacked unit disposed on the other substrate.

[0154] 14. The semiconductor structure according to any one of 1-13, wherein:

[0155] In each resonator stack unit, an acoustic decoupling layer is provided between the upper and lower resonators that are adjacent to each other, and between the bottom electrode of the upper resonator and the top electrode of the lower resonator. The acoustic decoupling layer is a cavity and serves as an acoustic mirror of the upper resonator.

[0156] 15. According to the semiconductor structure described in 14, wherein:

[0157] The bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other.

[0158] 16. According to the semiconductor structure described in 15, wherein:

[0159] The non-electrode connection end of the top electrode of the lower resonator is connected to the non-electrode connection end of the bottom electrode of the upper resonator; or

[0160] The electrode connection terminal of the top electrode of the lower resonator is electrically connected to the electrode connection terminal of the bottom electrode of the upper resonator.

[0161] 17. According to the semiconductor structure described in 15, wherein:

[0162] The electrode connection terminal of the top electrode of the lower resonator is electrically connected to the electrode connection terminal of the bottom electrode of the upper resonator, and the non-electrode connection terminal of the top electrode of the lower resonator is electrically connected to the non-electrode connection terminal of the bottom electrode of the upper resonator.

[0163] 18. According to the semiconductor structure described in 14, wherein:

[0164] The bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically isolated from each other.

[0165] 19. According to the semiconductor structure described in 18, wherein:

[0166] At least a portion of the non-electrode connection end of the bottom electrode of the upper resonator in the circumferential direction or the end of the electrode connection end of the bottom electrode of the upper resonator is disposed on the upper surface of the piezoelectric layer of the lower resonator, and the end is located outside the non-electrode connection end of the top electrode of the lower resonator in the horizontal direction.

[0167] 20. The semiconductor structure according to 19, wherein:

[0168] A portion of the non-electrode connection end of the bottom electrode of the upper resonator in the circumferential direction or the end of the electrode connection end of the bottom electrode of the upper resonator is disposed on the upper surface of the piezoelectric layer of the lower resonator, and another portion of the non-electrode connection end of the bottom electrode of the upper resonator in the circumferential direction is located inside the boundary of the acoustic decoupling layer in the horizontal direction.

[0169] 21. According to the semiconductor structure described in 20, wherein:

[0170] The resonator stacking unit includes a first electrode layer and a second electrode layer;

[0171] The first electrode layer includes the top electrode of the lower resonator and a non-top electrode layer that is electrically isolated from the non-electrode connection terminal of the top electrode of the lower resonator and located outside the non-electrode connection terminal of the top electrode of the lower resonator.

[0172] The second electrode layer includes the bottom electrode of the upper resonator and a non-bottom electrode layer that is electrically isolated from the non-electrode connection terminal of the bottom electrode of the upper resonator and located outside the non-electrode connection terminal of the bottom electrode of the upper resonator.

[0173] The electrode connection terminal of the bottom electrode of the upper resonator covers the non-top electrode layer, and the non-bottom electrode layer covers the electrode connection terminal of the top electrode of the lower resonator.

[0174] 22. An electronic device comprising a semiconductor structure according to any one of 1-21.

[0175] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that variations may be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A semiconductor structure, comprising: There are k filters, where k is a natural number not less than 2, and each of the k filters includes M... i Individual acoustic resonator, and M i Individual acoustic resonators include (M) i -1) / n resonator stacking units, where i is an integer from 1 to k, M i Let n be a natural number not less than 3, and M be a natural number. i One of the common divisors of the set of numbers consisting of -1, where: The semiconductor structure includes an antenna port and multiple other ports, and k filters are all connected to the antenna port; In each resonator stacking unit, n resonators are stacked on top of each other; and The remaining resonator in each of the k filters is a single resonator, and all the single resonators are stacked on top of each other to form a hybrid stacking unit. At least one single resonator is a resonator that is not adjacent to the other ports.

2. The semiconductor structure according to claim 1, wherein: The at least one individual resonator is adjacent to the antenna port.

3. The semiconductor structure according to claim 1, wherein: None of the individual resonators are adjacent to the other ports.

4. The semiconductor structure according to claim 3, wherein: All individual resonators are adjacent to the antenna port.

5. The semiconductor structure according to claim 1, wherein: The semiconductor structure includes a duplexer, where k is 2.

6. The semiconductor structure according to claim 1, wherein: The semiconductor structure includes a multiplexer, where k is not less than 3.

7. The semiconductor structure according to claim 1, wherein: The stacking units of the k filters are all disposed on the same substrate; or The stacking units of the k filters are disposed on at least two substrates.

8. The semiconductor structure according to any one of claims 1-7, wherein: In each resonator stack unit, an acoustic decoupling layer is provided between the upper and lower resonators that are adjacent to each other, and between the bottom electrode of the upper resonator and the top electrode of the lower resonator. The acoustic decoupling layer is a cavity and serves as an acoustic mirror of the upper resonator.

9. A semiconductor structure, comprising: There are k filters, where k is a natural number not less than 2. The k filters include a first filter and a second filter. The first filter includes M1 individual acoustic resonators, and the second filter includes M2 individual acoustic resonators. M1 = 3p + 1, M2 = 3q + 2, where p and q are natural numbers. The 3p resonators in the first filter form p resonator stacking units, and the 3q resonators in the second filter form q resonator stacking units. Each resonator stacking unit includes 3 stacked resonators. The semiconductor structure includes an antenna port and other ports, and both the first filter and the second filter are connected to the antenna port. One of the remaining resonators of the first filter and / or one of the remaining two resonators of the second filter are not adjacent to the other ports, and the remaining one resonator of the first filter and the remaining two resonators of the second filter are stacked on top of each other to form a hybrid stacked unit.

10. The semiconductor structure according to claim 9, wherein: One of the remaining resonators of the first filter or one of the remaining two resonators of the second filter is adjacent to the antenna port.

11. The semiconductor structure according to claim 9, wherein: One of the remaining resonators of the first filter and one of the remaining two resonators of the second filter are adjacent to the antenna port.

12. The semiconductor structure according to claim 11, wherein: In the hybrid stacking unit, two resonators adjacent to the antenna port are stacked next to each other.

13. The semiconductor structure according to claim 9, wherein: The remaining resonator of the first filter and the remaining two resonators of the second filter are not adjacent to the other ports.

14. The semiconductor structure according to claim 9, wherein: The stacking units of the k filters are all disposed on the same substrate; or The stacking units of the k filters are disposed on at least two substrates.

15. The semiconductor structure according to claim 14, wherein: The stacked units of the k filters are disposed on at least two substrates, and in the stacked units disposed on the two substrates, the layer thickness of the resonator in the stacked unit disposed on one substrate is different from the layer thickness of the resonator in the stacked unit disposed on the other substrate.

16. The semiconductor structure according to any one of claims 9-15, wherein: In each resonator stack unit, an acoustic decoupling layer is provided between the upper and lower resonators that are adjacent to each other, and between the bottom electrode of the upper resonator and the top electrode of the lower resonator. The acoustic decoupling layer is a cavity and serves as an acoustic mirror of the upper resonator.

17. The semiconductor structure according to claim 16, wherein: The bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically connected to each other.

18. The semiconductor structure according to claim 17, wherein: The non-electrode connection end of the top electrode of the lower resonator is connected to the non-electrode connection end of the bottom electrode of the upper resonator; or The electrode connection terminal of the top electrode of the lower resonator is electrically connected to the electrode connection terminal of the bottom electrode of the upper resonator.

19. The semiconductor structure according to claim 17, wherein: The electrode connection terminal of the top electrode of the lower resonator is electrically connected to the electrode connection terminal of the bottom electrode of the upper resonator, and the non-electrode connection terminal of the top electrode of the lower resonator is electrically connected to the non-electrode connection terminal of the bottom electrode of the upper resonator.

20. The semiconductor structure according to claim 16, wherein: The bottom electrode of the upper resonator and the top electrode of the lower resonator are electrically isolated from each other.

21. The semiconductor structure according to claim 20, wherein: At least a portion of the non-electrode connection end of the bottom electrode of the upper resonator in the circumferential direction or the end of the electrode connection end of the bottom electrode of the upper resonator is disposed on the upper surface of the piezoelectric layer of the lower resonator, and the end is located outside the non-electrode connection end of the top electrode of the lower resonator in the horizontal direction.

22. The semiconductor structure according to claim 21, wherein: A portion of the non-electrode connection end of the bottom electrode of the upper resonator in the circumferential direction or the end of the electrode connection end of the bottom electrode of the upper resonator is disposed on the upper surface of the piezoelectric layer of the lower resonator, and another portion of the non-electrode connection end of the bottom electrode of the upper resonator in the circumferential direction is located inside the boundary of the acoustic decoupling layer in the horizontal direction.

23. The semiconductor structure according to claim 22, wherein: The resonator stacking unit includes a first electrode layer and a second electrode layer; The first electrode layer includes the top electrode of the lower resonator and a non-top electrode layer that is electrically isolated from the non-electrode connection terminal of the top electrode of the lower resonator and located outside the non-electrode connection terminal of the top electrode of the lower resonator. The second electrode layer includes the bottom electrode of the upper resonator and a non-bottom electrode layer that is electrically isolated from the non-electrode connection terminal of the bottom electrode of the upper resonator and located outside the non-electrode connection terminal of the bottom electrode of the upper resonator. The electrode connection terminal of the bottom electrode of the upper resonator covers the non-top electrode layer, and the non-bottom electrode layer covers the electrode connection terminal of the top electrode of the lower resonator.

24. An electronic device comprising a semiconductor structure according to any one of claims 1-23.

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