Display panel and manufacturing method thereof
By using an organic insulating layer made of resin material in the display panel and performing precuring treatment, and combining with the alignment device to realize the inlay of the light emitting element, the problems of complexity and low efficiency of the light emitting element transfer in the prior art are solved, and a simple, economical and efficient huge transfer technology is provided.
Patent Information
- Application Number
- CN202010863186.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-08-25
- Publication Date
- 2025-09-02
- Estimated Expiration
- 2040-08-25
AI Technical Summary
In the prior art, the huge transfer technology of light emitting elements is complex, has high cost, low efficiency and low yield. Especially in the process of eutectic welding, adverse effects such as welding seams are prone to occur, making it difficult to achieve high-precision transfer.
The organic insulating layer made of resin material ensures its flexibility through precuring treatment. The light emitting element is embedded in the organic insulating layer by using the alignment device to realize the alignment and pressing of the light emitting element, avoid eutectic welding, and directly transfer the light emitting element from the native substrate to the driving substrate.
It realizes a huge amount of transfer of light emitting elements that are simple, practical, economical, high efficiency, high yield and high transfer accuracy, reducing process complexity and cost and improving transfer accuracy.
Smart Images

Figure CN114093902B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof. Background Art
[0002] The development of small-scale light-emitting devices currently faces numerous technical challenges, with mass transfer being the most challenging key process. After the photolithography step, the bare light-emitting chip particles must be transferred from the native substrate to the driver substrate, directly connecting the LED electrodes to the substrate. The large number of LEDs transferred each time places extremely high demands on the stability and precision of the transfer process.
[0003] Currently, eutectic welding is the most widely used technology for transferring micro-components of light-emitting devices. It has advantages such as low void rate and good heat dissipation, making it particularly suitable for high-frequency components with high temperature requirements. Eutectic welding is generally performed in a vacuum or inert gas environment to prevent oxidation by air during welding. A eutectic furnace is a specialized equipment developed based on the eutectic principle. It completes chip packaging in a vacuum or inert protective gas environment according to the eutectic process curve requirements of different welding alloy materials. Existing eutectic furnaces can provide a vacuum environment or a controlled atmosphere (nitrogen, a mixture of nitrogen and formic acid, etc.) during eutectic welding, eliminating the need for flux. The process curve can be set according to the eutectic characteristics of the welding object, and the eutectic environment within the furnace body can be precisely controlled, including temperature and time, vacuum level, and inflation gas flow and time.
[0004] However, the eutectic soldering process is complex and requires extensive electroplating solder materials. This process is often accompanied by weld seams that adversely affect the chip's electrical properties. Therefore, the design of a simple, practical, cost-effective, efficient, high-yield, and high-precision mass transfer technology is currently a major research priority. Summary of the Invention
[0005] A display panel and a manufacturing method thereof provided by an embodiment of the present invention are used to provide a mass transfer technology that is simple, practical, economical, efficient, has a high yield, and has high transfer precision.
[0006] Therefore, an embodiment of the present invention provides a display panel, including:
[0007] A base substrate, the base substrate having a circuit area and a light emitting area;
[0008] A driving circuit is located in the circuit area of the substrate;
[0009] an organic insulating layer, covering the light-emitting area of the base substrate;
[0010] a light-emitting element embedded in the organic insulating layer, wherein an orthographic projection of the light-emitting element on the base substrate does not overlap with an orthographic projection of the driving circuit on the base substrate;
[0011] The first bonding electrode is located on a side of the light emitting element away from the base substrate, and the light emitting element is electrically connected to the driving circuit through the first bonding electrode.
[0012] Optionally, in the above-mentioned display panel provided by an embodiment of the present invention, the organic insulating layer further covers the circuit area, and the display panel further comprises an interlayer insulating layer located between the film layer where the first bonding electrode is located and the light-emitting element;
[0013] The driving circuit includes an active layer, a gate insulating layer and a gate layer stacked in sequence on the base substrate; the light-emitting element is electrically connected to the first lap electrode through a via hole penetrating the interlayer insulating layer; and the first lap electrode is electrically connected to the active layer through a via hole penetrating the interlayer insulating layer and the organic insulating layer.
[0014] Optionally, the display panel provided in the embodiment of the present invention further includes: a buffer layer located between the base substrate and the driving circuit, a common electrode layer located between the buffer layer and the base substrate, and a light-shielding metal layer located between the common electrode layer and the base substrate;
[0015] Also included: a second bonding electrode disposed on the same layer as the first bonding electrode;
[0016] The side of the light-emitting element facing away from the base substrate includes a first electrode and a second electrode, the first electrode is electrically connected to the first overlapping electrode, the second electrode is electrically connected to the second overlapping electrode through a via hole penetrating the interlayer insulating layer, and the second overlapping electrode is electrically connected to the common electrode layer through a via hole penetrating the interlayer insulating layer, the organic insulating layer and the buffer layer in sequence.
[0017] Optionally, the above-mentioned display panel provided in an embodiment of the present invention further includes: a passivation layer located on the side of the first overlapping electrode facing away from the base substrate, a pixel electrode located on the side of the passivation layer facing away from the base substrate, and an encapsulation structure located on the side of the pixel electrode facing away from the base substrate; the pixel electrode is electrically connected to the second overlapping electrode through a via hole penetrating the passivation layer.
[0018] Optionally, in the above-mentioned display panel provided by an embodiment of the present invention, the thickness of the organic insulating layer is greater than half the thickness of the light-emitting element.
[0019] Optionally, in the above display panel provided by an embodiment of the present invention, the material of the interlayer insulating layer is an inorganic material or an organic material.
[0020] Optionally, in the above display panel provided by an embodiment of the present invention, the light emitting colors of the light emitting elements include red, green and blue.
[0021] Accordingly, an embodiment of the present invention further provides a method for manufacturing a display panel, comprising:
[0022] forming a driving circuit in a circuit area of the base substrate;
[0023] forming an organic insulating layer covering the light emitting area on the base substrate;
[0024] Adhere the light-emitting element to the box substrate by thermal debonding adhesive;
[0025] The alignment device aligns and presses the alignment substrate having the light-emitting element and the base substrate having the organic insulating layer formed thereon, so that the light-emitting element is embedded in the organic insulating layer; wherein the orthographic projection of the light-emitting element on the base substrate does not overlap with the orthographic projection of the driving circuit on the base substrate;
[0026] peeling off the thermally degradable adhesive;
[0027] A first bonding electrode is formed on a side of the light emitting element away from the base substrate; the light emitting element is electrically connected to the driving circuit via the first bonding electrode.
[0028] Optionally, in the above-mentioned manufacturing method provided in an embodiment of the present invention, after forming the organic insulating layer, it also includes: performing a pre-curing treatment on the organic insulating layer; the temperature of the pre-curing treatment is 100° C. to 120° C., and the time is 90s to 150s.
[0029] Optionally, in the above-mentioned manufacturing method provided by the embodiment of the present invention, the peeling off of the thermally degradable adhesive specifically includes:
[0030] The organic insulating layer is cured, and the pyrolytic adhesive loses its viscosity and is separated from the light-emitting element; wherein the curing temperature is 220° C. to 250° C., and the curing time is 30 min to 60 min.
[0031] Optionally, in the above manufacturing method provided by the embodiment of the present invention, before forming the first bonding electrode on the side of the light emitting element facing away from the base substrate, the method further comprises:
[0032] forming an interlayer insulating layer on a side of the light emitting element away from the base substrate;
[0033] The interlayer insulating layer and the organic insulating layer are etched so that the light-emitting element is electrically connected to the first bonding electrode through a via hole penetrating the interlayer insulating layer, and the first bonding electrode is electrically connected to the active layer of the driving circuit through a via hole penetrating the interlayer insulating layer and the organic insulating layer.
[0034] Beneficial effects of the embodiments of the present invention:
[0035] An embodiment of the present invention provides a display panel and a manufacturing method thereof, the display panel comprising: a substrate having a circuit area and a light-emitting area; a driving circuit located in the circuit area of the substrate; an organic insulating layer covering the light-emitting area of the substrate; a light-emitting element embedded in the organic insulating layer, wherein the orthographic projection of the light-emitting element on the substrate does not overlap with the orthographic projection of the driving circuit on the substrate; and a first bonding electrode located on a side of the light-emitting element facing away from the substrate, the light-emitting element being electrically connected to the driving circuit via the first bonding electrode. In the display panel provided by the present invention, since the material of the organic insulating layer is generally a resin material, which has fluidity before being fully cured, the resin material can be pre-cured to prevent it from flowing and ensure that it has a certain degree of flexibility, so that the light-emitting element can be embedded in the organic insulating layer by alignment and pressing using an alignment device. Therefore, it is possible to transfer the light-emitting element bare chip particles from the native substrate to the driving substrate without using the eutectic welding technology in the prior art. Therefore, the present invention provides a simple, practical, economical, efficient, high-yield, and high-precision light-emitting element mass transfer technology. BRIEF DESCRIPTION OF THE DRAWINGS
[0036] Figure 1 A schematic cross-sectional structure diagram of a display panel provided by an embodiment of the present invention;
[0037] Figure 2 This is a schematic diagram of a process for manufacturing a display panel provided by an embodiment of the present invention;
[0038] Figures 3A-3H A schematic structural diagram of the method for manufacturing a display panel provided by an embodiment of the present invention after executing each step;
[0039] Figure 4 The second flowchart of a method for manufacturing a display panel provided by an embodiment of the present invention is shown. DETAILED DESCRIPTION
[0040] To make the objectives, technical solutions, and advantages of the present invention more apparent, the present invention will be further described in detail below with reference to the accompanying drawings. It is apparent that the embodiments described are only a portion of the embodiments of the present invention, rather than all of them. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are intended to fall within the scope of protection of the present invention.
[0041] The shapes and sizes of the components in the drawings do not reflect the true proportions, and are only intended to illustrate the contents of the present invention.
[0042] An embodiment of the present invention provides a display panel, such as Figure 1 Shown, including:
[0043] The substrate 1 has a circuit area 11 and a light emitting area 12. Specifically, the display panel generally includes a plurality of sub-pixels. Figure 1 Only a cross-sectional schematic diagram of one of the sub-pixels is shown;
[0044] The driving circuit 2 is located in the circuit area 11 of the base substrate 1;
[0045] An organic insulating layer 3 covering the light emitting region 12 of the base substrate 1;
[0046] The light emitting element 4 is embedded in the organic insulating layer 3, and the orthographic projection of the light emitting element 4 on the base substrate 1 does not overlap with the orthographic projection of the driving circuit 2 on the base substrate 1;
[0047] The first bonding electrode 51 is located on a side of the light emitting element 4 facing away from the base substrate 1 . The light emitting element 4 is electrically connected to the driving circuit 2 via the first bonding electrode 51 .
[0048] In the above-mentioned display panel provided by the embodiment of the present invention, since the material of the organic insulating layer is generally a resin material, the resin material has fluidity before being completely solidified, and therefore the resin material can be pre-cured to prevent it from flowing and ensure that it has a certain flexibility, so that the light-emitting element can be embedded in the organic insulating layer by alignment and pressing using an alignment device. Therefore, there is no need to adopt the eutectic welding technology in the prior art to realize the transfer of the light-emitting element bare chip particles from the native substrate to the driving substrate. Therefore, the present invention provides a simple, practical, economical, efficient, high-yield, and high-transfer precision light-emitting element mass transfer technology.
[0049] It should be noted that the light-emitting element 4 includes a first electrode 41 and a second electrode 42 (to be introduced later). The light-emitting element 4 mentioned above is embedded in the organic insulating layer 3, which means that part of the thickness of the light-emitting element 4 is embedded in the organic insulating layer 3, and the first electrode 41 and the second electrode 42 are exposed outside the organic insulating layer 3 to achieve subsequent electrode overlapping.
[0050] In a specific implementation, in the above-mentioned display panel provided in the embodiment of the present invention, the light-emitting element may be a MicroLED. Due to the small size of the MicroLED, the pixel resolution of the display panel can be improved. Specifically, the size of the MicroLED is generally less than 100μm. Of course, the light-emitting element may also be other light-emitting elements such as Mini LED, and the present invention is not limited to this. Specifically, when the light-emitting element is a Mini LED, the size of the Mini LED is 100μm-200μm.
[0051] It should be noted that, in the embodiments of the present invention, the light-emitting element is Micro LED as an example for description, and Micro LED is used to represent the light-emitting element below.
[0052] Specifically, the material of the organic insulating layer can be a silicone-based resin material, which is a flat non-photosensitive resin material. The use of silicone-based resin material in the organic insulating layer can achieve the effect of flat bottom structure changes on Micro LEDs. The material of the organic insulating layer can also be a photosensitive resin material, which is used to cover and protect the Micro LED and open holes to expose the chip electrodes. Specifically, the thickness of the organic insulating layer can be greater than half the thickness of the light-emitting element (Micro LED), so that when the Micro LED is subsequently pressed, the Micro LED can be effectively fixed in the organic insulating layer. Specifically, before the Micro LED is embedded in the organic insulating layer, only the organic insulating layer needs to be pre-cured, in order to ensure that when the Micro LED substrate is aligned through the box alignment equipment, the Micro LED is easily pressed into the organic insulating layer of the driving backplane.
[0053] It should be noted that the size of the first electrode 41 and the second electrode 42 of the light-emitting element 4 is negligible relative to the size of the light-emitting element 4 itself. Therefore, the thickness of the light-emitting element 4 can be the thickness from the base substrate 1 to the organic insulating layer 3 when the electrodes are not included, or the thickness from the base substrate 1 to the organic insulating layer 3 when the electrodes are included.
[0054] In a specific implementation, the thickness of the organic insulating layer can be determined according to the size of the light-emitting element. For example, when the thickness of the light-emitting element is 6um-8um, the thickness of the organic insulating layer can be 3um-5um.
[0055] In specific implementation, in the above display panel provided by the embodiment of the present invention, as Figure 1 As shown, the organic insulating layer 3 also covers the circuit area 11. Specifically, the organic insulating layer 3 is formed entirely on the side of the driving circuit 2 facing away from the base substrate 1.
[0056] The thickness of a conventional Micro LED is generally 6um-8um, and an interlayer insulating layer 6 is required to cover and protect the light-emitting element 4. The thickness of the interlayer insulating layer 6 should not be too thick, and should be sufficient to cover the light-emitting element 4 and the electrodes of the light-emitting element 4 (the first electrode 41 and the second electrode 42, which will be described later) in coordination with the thickness of the organic insulating layer 3. This can reduce etching time during subsequent etching and improve process efficiency. Therefore, the display panel also includes an interlayer insulating layer 6 located between the film layer where the first bonding electrode 51 is located and the light-emitting element 4.
[0057] The driving circuit 2 includes an active layer 21, a gate insulating layer 22 and a gate electrode 23 stacked in sequence on the base substrate 1. The light-emitting element 4 is electrically connected to the first strapping electrode 5 through a via hole penetrating the interlayer insulating layer 6. The first strapping electrode 51 is electrically connected to the active layer 21 through a via hole penetrating the interlayer insulating layer 6 and the organic insulating layer 3.
[0058] It should be noted that the embodiment of the present invention is described using a top-gate transistor as an example of a driving circuit. Of course, it can also be a bottom-gate type. The difference is that the shape of the gate insulating layer of the top-gate type is the same as the shape of the gate (in order to overlap the source and drain metal layers formed subsequently with the active layer), while in the bottom-gate type structure, the active layer is located above the gate insulating layer. Therefore, the gate insulating layer does not need to be etched and can be a whole-surface structure.
[0059] In specific implementations, in the display panel provided in the embodiments of the present invention, the interlayer insulating layer may be made of either an inorganic or organic material. Since inorganic layers are generally thin, when the portion of the light-emitting element exposed outside the organic insulating layer is relatively thin, an inorganic material may be selected to form the interlayer insulating layer. When the portion of the light-emitting element exposed outside the organic insulating layer is relatively thick, an organic material may be selected to form the interlayer insulating layer. The organic material may be a silicone-based resin material with good flatness. This can also enhance the adhesion between the interlayer insulating layer and the organic insulating layer, thereby improving the performance of the display panel.
[0060] Specifically, the film layer where the first strapping electrode 51 is located is the source-drain metal layer 5, and the source-drain metal layer 5 also includes a third strapping electrode 53 and a fourth strapping electrode 54. The first strapping electrode 51 and the third strapping electrode 53 are electrically connected to the active layer 21 respectively, and the parts of the active layer 21 corresponding to the first strapping electrode 51 and the third strapping electrode 53 are relative to the source and drain, and the fourth strapping electrode 54 is electrically connected to the gate 23.
[0061] In specific implementation, in the above display panel provided by the embodiment of the present invention, as Figure 1As shown, the present invention further includes: a buffer layer 7 located between the base substrate 1 and the driving circuit 2, a common electrode layer 8 located between the buffer layer 7 and the base substrate 1, and a light-shielding metal layer 9 located between the common electrode layer 8 and the base substrate 1; specifically, the orthographic projection of the light-shielding metal layer 9 on the base substrate 1 covers the orthographic projection of the active layer 21 on the base substrate 1, and the light-shielding metal layer 9 is used to prevent the active layer 21 from being exposed to external ambient light and thus damaging its performance;
[0062] It also includes: a second bonding electrode 52 provided on the same layer as the first bonding electrode 51;
[0063] The side of the light-emitting element 4 facing away from the base substrate 1 includes a first electrode 41 and a second electrode 42. The first electrode 41 is electrically connected to the first strapping electrode 51. The second electrode 42 is electrically connected to the second strapping electrode 52 through a via hole penetrating the interlayer insulating layer 6. The second strapping electrode 52 is electrically connected to the common electrode layer 8 through a via hole penetrating the interlayer insulating layer 6, the organic insulating layer 3 and the buffer layer 7 in sequence.
[0064] Specifically, when the light-emitting element 4 emits light, a driving voltage is input to the first electrode 41 of the light-emitting element 4 through the driving circuit 2, and a common voltage is input to the second electrode 42 of the light-emitting element 4 through the common electrode layer 8 to drive the light-emitting element 4 to emit light. The specific light-emitting principle is the same as that of the prior art and will not be described in detail here.
[0065] Specifically, the common electrode layer 8 is made of a transparent conductive material, such as ITO.
[0066] In specific implementation, in the above display panel provided by the embodiment of the present invention, as Figure 1 As shown, it also includes: a passivation layer 10 located on the side of the first overlapping electrode 51 away from the base substrate 1, a pixel electrode 13 located on the side of the passivation layer 10 away from the base substrate 1, and an encapsulation structure (not shown) located on the side of the pixel electrode 13 away from the base substrate 1; the pixel electrode 13 is electrically connected to the second overlapping electrode 52 through a via hole penetrating the passivation layer 10.
[0067] Specifically, the pixel electrode 13 is made of a transparent conductive material, such as ITO.
[0068] In specific implementation, the display panel provided by the embodiment of the present invention may further include other functional film layers well known to those skilled in the art, which will not be described in detail here.
[0069] In specific implementation, in the above-mentioned display panel provided in the embodiment of the present invention, the luminous colors of the light-emitting elements may include red, green and blue, that is, the light-emitting elements include red light-emitting elements, green light-emitting elements and blue light-emitting elements, thereby realizing full-color display.
[0070] Based on the same inventive concept, an embodiment of the present invention further provides a method for manufacturing the above-mentioned display panel, such as Figure 2 Shown, including:
[0071] S201, forming a driving circuit in a circuit area of a base substrate;
[0072] Specifically, if Figure 3A As shown, a light shielding metal layer 9 , a common electrode layer 8 , a buffer layer 7 , a gate electrode 21 , a gate insulating layer 22 and a gate electrode 23 are sequentially formed on a base substrate 1 .
[0073] S202, forming an organic insulating layer covering the light emitting area on the base substrate;
[0074] Specifically, if Figure 3B As shown, an organic insulating layer 3 is formed on a base substrate 1 on which a gate electrode 23 is formed. The organic insulating layer formed in this step is first coated with a resin material. Since the resin material has fluidity, the resin material is first pre-cured, that is, the resin material is pre-baked after being coated with glue. After the treatment, the resin material does not flow, which is convenient for subsequent exposure processes without contaminating the equipment. After coating the nearly liquid resin material, a pre-curing treatment is performed, in which the groups therein are not completely cross-linked, and the overall film layer is not dense, which is convenient for the subsequent pressing and embedding of the light-emitting element 4 into the organic insulating layer 3.
[0075] S203, adhering the light emitting element to the cell substrate by thermally debonding the adhesive;
[0076] Specifically, if Figure 3C As shown, the light emitting element 4 is adhered to the box substrate 01 by the thermally degradable adhesive 02 , wherein the thermally degradable adhesive 02 gradually loses its viscosity at a certain high temperature and separates from the light emitting element 4 .
[0077] S204, aligning and pressing the cell substrate having the light-emitting element and the base substrate having the organic insulating layer formed thereon by an alignment device, so that the light-emitting element is embedded in the organic insulating layer; wherein the orthographic projection of the light-emitting element on the base substrate does not overlap with the orthographic projection of the driving circuit on the base substrate;
[0078] Specifically, if Figure 3DAs shown, an alignment device is used to align and press the cassette substrate 01 having the light-emitting element 4 and the base substrate 1 having the organic insulating layer 3, so that the light-emitting element 4 is embedded in the organic insulating layer 3. The alignment device can be an ODF (One Drop Filling) alignment device, which has suction cups on both the top and bottom. The upper suction cup holds the cassette substrate 01, and the lower suction cup holds the base substrate 1. The camera is then used to align the alignment marks on the respective substrates, and the ODF pressing is used to embed the light-emitting element 4 in the organic insulating layer 3. Because the pressure of the existing ODF device is fixed, the depth to which the light-emitting element 4 is pressed into the organic insulating layer 3 can be controlled by the thickness of the organic insulating layer 3.
[0079] S205, peeling off the thermally decomposed adhesive;
[0080] Specifically, if Figure 3E As shown, the organic insulating layer 3 is cured in an N2 or Ar atmosphere at a temperature of 220°C to 250°C for 30 to 60 minutes. Compared to the pre-bake pre-curing process described above, the curing (post-bake) temperature is higher and the time is longer. This is to allow cross-linking and curing reactions to occur between the groups of the resin material, expel gaseous reactants (outgas, H2O, etc.), and ultimately achieve complete curing. Furthermore, at a temperature of 220°C to 250°C, the pyrolytic adhesive 02 loses its viscosity and detaches from the light-emitting element 4, thereby peeling off the pyrolytic adhesive 02 and the base plate 01.
[0081] S206, forming a first bonding electrode on a side of the light emitting element facing away from the substrate; the light emitting element is electrically connected to the driving circuit via the first bonding electrode;
[0082] Specifically, if Figure 3F As shown, an interlayer insulating layer 6 is formed on the side of the light emitting element 4 away from the substrate 1; Figure 3G As shown, the organic insulating layer 3 and the interlayer insulating layer 6 are patterned to expose the electrodes and prepare through holes for subsequent electrical connections; Figure 3H As shown, a source-drain metal layer 5 is formed on the side of the interlayer insulating layer 6 facing away from the base substrate 1. Specifically, the source-drain metal layer 5 is deposited by a sputtering process. The sputtering process is performed at a low temperature to avoid damage to the light-emitting element 4 caused by a high-temperature process. The source-drain metal layer 5 includes a first strapping electrode 51, a second strapping electrode 52, a third strapping electrode 53 and a fourth strapping electrode 54. The first electrode 41 of the light-emitting element 4 is electrically connected to the active layer 21 of the driving circuit 2 through the first strapping electrode 51, the second electrode 42 of the light-emitting element 4 is electrically connected to the common electrode layer 8 through the second strapping electrode 52, the third strapping electrode 53 is electrically connected to the active layer 21, and the fourth strapping electrode 54 is electrically connected to the gate 23; as shown Figure 1As shown, a passivation layer 10 is formed on the side of the source / drain metal layer 5 facing away from the base substrate 1, and the passivation layer 10 is patterned to form a via hole, and a pixel electrode 13 is formed on the side of the passivation layer 10 facing away from the base substrate 1, and the pixel electrode 13 is electrically connected to the second bonding electrode 52 through the via hole.
[0083] Specifically, in Figure 1 Afterwards, the light emitting element 4 needs to be packaged, that is, the chip packaging structure is formed to protect the light emitting element. The packaging process is the same as that in the prior art and will not be described in detail here.
[0084] The manufacturing method of the above-mentioned display panel provided by the embodiment of the present invention, since the material of the organic insulating layer is generally a resin material, and the resin material has fluidity before being completely solidified, the resin material can be pre-cured to prevent it from flowing and ensure that it has a certain flexibility, so that the light-emitting element can be embedded in the organic insulating layer by alignment and pressing using an alignment device. Therefore, there is no need to adopt the eutectic welding technology in the prior art to realize the transfer of the light-emitting element bare chip particles from the native substrate to the driving substrate. Therefore, the present invention provides a simple, practical, economical, efficient, high-yield, and high-transfer precision light-emitting element mass transfer technology; in addition, the light-emitting element is embedded in the organic insulating layer in the display panel. Compared with the prior art of welding the light-emitting element after the driving backplane is manufactured, the present invention can reduce the thickness from the base substrate to the light-emitting element module part.
[0085] In a specific implementation, in the above-described manufacturing method provided in an embodiment of the present invention, after forming the organic insulating layer in step S202, the method further includes: performing a pre-curing treatment on the organic insulating layer; the pre-curing treatment is performed at a temperature of 100° C. to 120° C. for a time of 90 seconds to 150 seconds. For details, see the description of step S202.
[0086] In a specific implementation, in the above-mentioned manufacturing method provided by the embodiment of the present invention, step S205 of peeling off the thermally degradable adhesive may specifically include:
[0087] The organic insulating layer is cured to remove the adhesive from the light-emitting element by thermal decomposition. The curing temperature is 220° C. to 250° C. and the curing time is 30 min to 60 min. For details, refer to the description of step S205.
[0088] In specific implementation, in the above-mentioned manufacturing method provided by the embodiment of the present invention, before forming the first bonding electrode on the side of the light-emitting element away from the substrate, as shown in FIG. Figure 4 As shown, it also includes:
[0089] S401, forming an interlayer insulating layer on a side of the light emitting element away from the substrate;
[0090] S402, etching the interlayer insulating layer and the organic insulating layer, so that the light emitting element is electrically connected to the first bonding electrode through the via hole penetrating the interlayer insulating layer, and the first bonding electrode is electrically connected to the active layer of the driving circuit through the via hole penetrating the interlayer insulating layer and the organic insulating layer.
[0091] Specifically, the detailed production process of the above steps S401 and S402 can refer to the description of the above step S206.
[0092] It should be noted that in the display panel manufacturing method provided in the embodiments of the present invention, the patterning process may include only photolithography, or may include photolithography and etching steps, and may also include other processes such as printing and inkjet printing to form a predetermined pattern. Photolithography refers to a process that uses photoresist, a mask, an exposure machine, and the like to form a pattern, including film formation, exposure, and development processes. In specific implementations, the corresponding patterning process can be selected based on the structure formed in the present invention.
[0093] Specifically, the display panel provided in the embodiments of the present invention can be applied to a display device, which can be any product or component with a display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigation system. Other essential components of the display device are well understood by those skilled in the art and are not described in detail here, nor should they be construed as limitations of the present invention. The implementation of the display device can be referenced to the embodiments of the display panel described above, and any repetitive details will not be repeated here.
[0094] An embodiment of the present invention provides a display panel and a manufacturing method thereof, the display panel comprising: a substrate having a circuit area and a light-emitting area; a driving circuit located in the circuit area of the substrate; an organic insulating layer covering the light-emitting area of the substrate; a light-emitting element embedded in the organic insulating layer, wherein the orthographic projection of the light-emitting element on the substrate does not overlap with the orthographic projection of the driving circuit on the substrate; and a first bonding electrode located on a side of the light-emitting element facing away from the substrate, wherein the light-emitting element is electrically connected to the driving circuit via the first bonding electrode. In the display panel provided by the present invention, since the material of the organic insulating layer is generally a resin material, and the resin material has fluidity before being fully cured, the resin material can be pre-cured to prevent it from flowing and ensure that it has a certain degree of flexibility, so that the light-emitting element can be embedded in the organic insulating layer by alignment and pressing using an alignment device. Therefore, it is possible to transfer the light-emitting element bare chip particles from the native substrate to the driving substrate without using the eutectic welding technology in the prior art. Therefore, the present invention provides a simple, practical, economical, efficient, high-yield, and high-precision light-emitting element mass transfer technology.
[0095] Obviously, those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if such changes and modifications fall within the scope of the claims and their equivalents, the present invention is intended to include such changes and modifications.
Claims
1. A display panel, characterized in that: include: A base substrate, the base substrate having a circuit area and a light emitting area; A driving circuit is located in the circuit area of the substrate; an organic insulating layer, covering the light-emitting area of the base substrate; a light-emitting element embedded in the organic insulating layer, wherein an orthographic projection of the light-emitting element on the base substrate does not overlap with an orthographic projection of the driving circuit on the base substrate; a first bonding electrode, located on a side of the light emitting element facing away from the base substrate, the light emitting element being electrically connected to the driving circuit via the first bonding electrode; The organic insulating layer also covers the circuit area, and the display panel further includes an interlayer insulating layer located between the film layer where the first bonding electrode is located and the light-emitting element; The driving circuit includes an active layer, a gate insulating layer, and a gate electrode stacked in sequence on the base substrate; the light-emitting element is electrically connected to the first strapping electrode via a via hole penetrating the interlayer insulating layer; and the first strapping electrode is electrically connected to the active layer via a via hole penetrating the interlayer insulating layer and the organic insulating layer; The light-emitting element includes a first electrode on a side facing away from the substrate, and the first electrode is electrically connected to the first strapping electrode; the distance between the surface of the first electrode away from the substrate and the substrate is greater than the distance between the surface of the organic insulating layer away from the substrate and the substrate; the light-emitting element includes a surface close to the substrate, a surface away from the substrate, and a side surface located between the surface close to the substrate and the surface away from the substrate; the surface of the light-emitting element close to the substrate is in direct contact with the organic insulating layer, and the side surface is in direct contact with the organic insulating layer; The distance between the surface of the gate electrode away from the base substrate and the base substrate is smaller than the distance between the surface of the organic insulating layer away from the base substrate and the base substrate, and the distance between the surface of the gate electrode close to the base substrate and the base substrate is larger than the distance between the surface of the organic insulating layer close to the base substrate and the base substrate.
2. The display panel according to claim 1, wherein Also includes: a buffer layer located between the base substrate and the driving circuit, a common electrode layer located between the buffer layer and the base substrate, and a light-shielding metal layer located between the common electrode layer and the base substrate; Also included: a second bonding electrode disposed on the same layer as the first bonding electrode; The side of the light-emitting element facing away from the base substrate includes a second electrode, the second electrode is electrically connected to the second strapping electrode through a via hole penetrating the interlayer insulating layer, and the second strapping electrode is electrically connected to the common electrode layer through a via hole penetrating the interlayer insulating layer, the organic insulating layer and the buffer layer in sequence.
3. The display panel according to claim 2, wherein: Also includes: A passivation layer located on the side of the first overlapping electrode facing away from the base substrate, a pixel electrode located on the side of the passivation layer facing away from the base substrate, and an encapsulation structure located on the side of the pixel electrode facing away from the base substrate; the pixel electrode is electrically connected to the second overlapping electrode through a via hole penetrating the passivation layer.
4. The display panel according to claim 1, wherein: The thickness of the organic insulating layer is greater than half the thickness of the light emitting element.
5. The display panel according to claim 2, wherein: The material of the interlayer insulating layer is an inorganic material or an organic material.
6. The display panel according to claim 1, wherein: The light emitting elements emit light in colors including red, green and blue.
7. A method for manufacturing a display panel according to any one of claims 1 to 6, characterized in that: include: forming a driving circuit in a circuit area of the base substrate; forming an organic insulating layer covering the light emitting area on the base substrate; Adhere the light-emitting element to the box substrate by thermal debonding adhesive; The alignment device aligns and presses the alignment substrate having the light-emitting element and the base substrate having the organic insulating layer formed thereon, so that the light-emitting element is embedded in the organic insulating layer; wherein the orthographic projection of the light-emitting element on the base substrate does not overlap with the orthographic projection of the driving circuit on the base substrate; peeling off the thermally degradable adhesive; A first bonding electrode is formed on a side of the light emitting element away from the base substrate; the light emitting element is electrically connected to the driving circuit via the first bonding electrode; Wherein, the organic insulating layer also covers the circuit area, and the display panel further includes an interlayer insulating layer located between the film layer where the first bonding electrode is located and the light-emitting element; The driving circuit includes an active layer, a gate insulating layer, and a gate electrode stacked in sequence on the base substrate; the light-emitting element is electrically connected to the first strapping electrode via a via hole penetrating the interlayer insulating layer; and the first strapping electrode is electrically connected to the active layer via a via hole penetrating the interlayer insulating layer and the organic insulating layer; The light-emitting element includes a first electrode on a side facing away from the substrate, and the first electrode is electrically connected to the first strapping electrode; the distance between the surface of the first electrode away from the substrate and the substrate is greater than the distance between the surface of the organic insulating layer away from the substrate and the substrate; the light-emitting element includes a surface close to the substrate, a surface away from the substrate, and a side surface located between the surface close to the substrate and the surface away from the substrate; the surface of the light-emitting element close to the substrate is in direct contact with the organic insulating layer, and the side surface is in direct contact with the organic insulating layer; The distance between the surface of the gate electrode away from the base substrate and the base substrate is smaller than the distance between the surface of the organic insulating layer away from the base substrate and the base substrate, and the distance between the surface of the gate electrode close to the base substrate and the base substrate is larger than the distance between the surface of the organic insulating layer close to the base substrate and the base substrate.
8. The production method according to claim 7, characterized in that: After forming the organic insulating layer, the method further includes: performing a pre-curing treatment on the organic insulating layer; the pre-curing treatment is performed at a temperature of 100° C. to 120° C. and for a time of 90 seconds to 150 seconds.
9. The production method according to claim 7, wherein: The step of stripping the thermally degradable adhesive specifically includes: The organic insulating layer is cured, and the pyrolytic adhesive loses its viscosity and is separated from the light-emitting element; wherein the curing temperature is 220° C. to 250° C., and the curing time is 30 min to 60 min.
10. The production method according to claim 7, wherein: Before forming the first bonding electrode on the side of the light emitting element facing away from the base substrate, the method further includes: forming an interlayer insulating layer on a side of the light emitting element away from the base substrate; The interlayer insulating layer and the organic insulating layer are etched so that the light-emitting element is electrically connected to the first bonding electrode through a via hole penetrating the interlayer insulating layer, and the first bonding electrode is electrically connected to the active layer of the driving circuit through a via hole penetrating the interlayer insulating layer and the organic insulating layer.
Citation Information
Patent Citations
Light emitting diode display device
US20180122836A1