Substrate processing equipment, cover ring thereof and method for manufacturing the cover ring

Abstract

The present invention relates to a substrate processing device, a cover ring thereof and a method for manufacturing the cover ring. A substrate processing device is disclosed. The substrate processing device comprises: a process chamber, in which a processing space is provided inside the process chamber; a support unit, which supports a substrate in the processing space; a gas supply unit, which supplies a process gas into the processing space; and a plasma source, which generates plasma from the process gas, the support unit comprising: a support plate, on which the substrate is positioned; and an edge ring assembly, which surrounds the substrate supported on the support plate and forms plasma in the substrate, and the edge ring assembly comprises: a focusing ring, which is formed of a first material and forms a distribution of plasma in the substrate; and a cover ring arranged in the area of ​​the substrate, which is on the outer side of the focusing ring, is formed of a second material having a mesh structure, and comprises a strengthening surface layer provided by injecting a mesh modifier into a blank part of the mesh structure.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2020-0114922 filed on September 8, 2020 in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the inventive concepts described herein relate to substrate processing apparatus, and more particularly, to an apparatus for processing a substrate by using plasma, and a cover ring provided for an edge ring assembly that confines the plasma to an upper region of the substrate. Background Art

[0004] Plasma can be used in substrate processing. For example, plasma can be used in etching, deposition or dry cleaning processes. Plasma is generated by extremely high temperature, strong electric field or radio frequency (RF) electrostatic field, and plasma refers to a free gas state including ions, electrons and free radicals. Dry cleaning, ashing or abrasion processes using plasma are performed due to collision of ions or free radical particles included in the plasma with the substrate.

[0005] A substrate processing apparatus using plasma may include a chamber, a substrate support unit, and a plasma source. The substrate support unit may include an edge ring assembly, which is arranged to surround a substrate so that plasma faces the substrate. The edge ring assembly may include, for example, a structure, which includes a quartz material. Although the structure (e.g., a cover ring) made of a quartz material causes a small amount of process byproducts in etching process equipment and hardly affects the process, the structure has low plasma resistance, has a short component replacement cycle due to the generation of ions, and causes local etching when plasma is concentrated in a defective portion of the surface of the quartz, and therefore, the life of the equipment may be shortened.

[0006] The structure of the quartz material can be formed as the quartz material reacts with fluorine gas in a plasma environment and produces SiF with a low sublimation point. 4 The edge ring assembly is a chamber assembly that is formed by a plurality of chamber components. The chamber components are exposed to the plasma when the chamber components are etched in a plasma environment. The chamber components may have a reduced lifespan and a shortened replacement cycle. In addition, the worn edge ring assembly may cause uneven distribution of plasma input to the substrate. The uneven distribution of plasma may result in an inability to uniformly process the substrate. Summary of the invention

[0007] Embodiments of the inventive concept provide: a cover ring provided for an edge ring assembly, the cover ring being able to uniformly process a substrate and form a plasma distribution to improve substrate processing efficiency; and a substrate processing apparatus including the cover ring.

[0008] Embodiments of the inventive concept may also provide: a cover ring provided for an edge ring assembly, the cover ring having high plasma resistance, hardly generating particles, and capable of increasing a parts replacement cycle; and a substrate processing apparatus including the cover ring.

[0009] Embodiments of the inventive concept may also provide a method for manufacturing a quartz component having improved plasma resistance, the quartz component being exposed to plasma including fluorine, by which production costs may be reduced since the quartz component is manufactured under relatively low temperature conditions.

[0010] Embodiments of the inventive concept also provide: a cover ring provided for an edge ring assembly, the surface of the cover ring being uniformly reinforced over a wide surface area; and a substrate processing apparatus including the cover ring.

[0011] Aspects of the inventive concept are not limited thereto, and other unmentioned aspects of the present invention may be clearly understood by those skilled in the art from the following description.

[0012] The present invention provides a substrate processing device. The substrate processing device includes: a process chamber, the process chamber provides a processing space inside the process chamber; a support unit, the support unit supports the substrate in the processing space; a gas supply unit, the gas supply unit supplies process gas into the processing space; and a plasma source, the plasma source generates plasma from the process gas, the support unit includes: a support plate, the substrate is positioned on the support plate; and an edge ring assembly, the edge ring assembly surrounds the substrate supported on the support plate and forms the plasma in the substrate, and the edge ring assembly includes: a focus ring, the focus ring is formed of a first material and forms the distribution of the plasma in the substrate; and a cover ring arranged in the area of ​​the substrate, the cover ring is formed of a second material having a mesh structure on the outside of the focus ring, and includes a strengthening surface layer provided by injecting a mesh modifier into a blank part of the mesh structure.

[0013] According to an embodiment, the first material may be a conductive material, and the second material may be a material having higher insulation performance than the first material.

[0014] According to one embodiment, the first material may be silicon carbide (SiC), and the second material may be quartz having an amorphous network structure.

[0015] According to one embodiment, the ionic radius of the network modifier may be larger than that of Si 4+ ionic radius.

[0016] According to one embodiment, the network modifier may be Na + , K + , Ca 2+ Mg 2+ Any one or more of .

[0017] According to one embodiment, the reinforced surface layer may have a thickness of 10 μm to 500 μm.

[0018] According to one embodiment, the edge ring assembly may further include an inner cover ring disposed between the cover ring and the focus ring and located above the outer region of the focus ring, and the inner cover ring may be formed of a third material in which SiO 2 and Al 2 O 3 Mix at a first ratio.

[0019] According to one embodiment, the inner cover ring may include 96.0 wt % to 99.5 wt % SiO 2 and 0.5 wt% to 4.0 wt% Al 2 O 3 .

[0020] According to one embodiment, the process gas may be a fluorine-containing gas.

[0021] The present inventive concept provides a cover ring of an edge ring assembly that surrounds a substrate and forms the plasma in the substrate in an apparatus for processing the substrate by plasma. The cover ring may include a strengthening surface layer having an inner diameter greater than the diameter of the substrate to be spaced apart from the substrate by a specific distance, formed of a material including a mesh structure, and provided by injecting a mesh modifier into a blank portion of the mesh structure.

[0022] According to one embodiment, the material of the cover ring may be quartz having an amorphous network structure.

[0023] According to one embodiment, the ionic radius of the network modifier may be larger than that of Si 4+ ionic radius.

[0024] According to one embodiment, the network modifier may be Na + , K + , Ca 2+ Mg 2+ Any one or more of .

[0025] According to one embodiment, the reinforced surface layer may have a thickness of 10 μm to 500 μm.

[0026] According to one embodiment, the process gas used to form the plasma may be a fluorine-containing gas, and the enhanced surface layer may be exposed to fluorine radicals excited from the process gas.

[0027] The inventive concept provides a method for manufacturing a cover ring of an edge ring assembly that surrounds a substrate and forms a plasma in an apparatus for treating the substrate by plasma. The method may include: preparing a salt bath including a network modifier having an ionic radius greater than that of Si 4+ ion radius; and immersing the cover ring in the salt bath at a first temperature, the cover ring having a shape processed from a material including a mesh structure.

[0028] According to one embodiment, the first temperature may be room temperature.

[0029] According to one embodiment, the salt bath may include CaCl 2 , KCl, NaCl or MgCl 2 of aqueous solution.

[0030] A method for manufacturing a cover ring of an edge ring assembly according to another aspect of the present inventive concept, the edge ring assembly surrounding a substrate and forming the plasma in the substrate in an apparatus for processing the substrate by plasma, comprises: preparing a paste material including a network modifier having an ionic radius larger than that of Si 4+ and causing the surface of the covering ring and the paste material to react with each other at a second temperature, wherein the shape of the covering ring is processed from a material including a mesh structure, and the second temperature is a melting point of the paste material or a higher temperature.

[0031] According to one embodiment, the paste material may include CaCl 2 , KCl, NaCl and MgCl 2 One or more of . BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The above and other objects and features will be understood from the following description with reference to the following drawings, wherein like reference numerals refer to like parts throughout the various figures unless otherwise specified, and wherein:

[0033] Figure 1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the inventive concept;

[0034] Figure 2 yes Figure 1, and is a cross-sectional view of an edge ring assembly constituting a substrate processing apparatus according to an embodiment of the inventive concept;

[0035] Figure 3 Schematically illustrated Figure 2 The molecular bonding structure between the reinforcing surface layer 247b of the covering ring 247 and the material layer 247a;

[0036] Figure 4 is a view illustrating a substrate processing apparatus according to another embodiment of the inventive concept;

[0037] Figure 5 yes Figure 4 , and is a cross-sectional view of an edge ring assembly constituting a substrate processing apparatus according to another embodiment of the inventive concept;

[0038] Figure 6 is a flow chart illustrating a wetting ion enhancement method using a quartz material according to an embodiment of the inventive concept; and

[0039] Figure 7 is a flow chart illustrating a dry-type ion enhancement method using a quartz material according to another embodiment of the inventive concept.

[0040] Reference numerals list

[0041] 10: Substrate processing equipment

[0042] 100: Process chamber

[0043] 110: Shell

[0044] 102: Drain hole

[0045] 120: Cover

[0046] 130: Bushing

[0047] 131: Support ring

[0048] 151: Exhaust pipe

[0049] 200: Support unit

[0050] 220: Support plate

[0051] 221: First supply channel

[0052] 223: Electrostatic Electrode

[0053] 223a: First lower power supply

[0054] 223c: First Power Line

[0055] 225: Heater

[0056] 225a: Heater power supply unit

[0057] 225c: Heater cable

[0058] 230: Passage forming plate

[0059] 231: First cycle pathway

[0060] 231a: Heat transfer medium storage

[0061] 231b: Heat transfer medium supply pipeline

[0062] 232: Second loop path

[0063] 232a: Cooling fluid reservoir

[0064] 232b: Cooler

[0065] 232c: Cooling fluid supply line

[0066] 233: Second supply channel

[0067] 236: Adhesive

[0068] 240: Edge ring assembly

[0069] 250: Insulation board

[0070] 270: Lower cover

[0071] 273: Connecting components

[0072] 300: Gas supply unit

[0073] 310: Gas supply nozzle

[0074] 320: Gas supply pipeline

[0075] 321: Valve

[0076] 330: Gas storage unit

[0077] 400: Plasma source

[0078] 410: Antenna seal

[0079] 420: Antenna

[0080] 430: Radio Frequency (RF) Power Supply

[0081] 500: Emission unit

[0082] 510: Emission plate

[0083] 511: Through hole

[0084] A: Partial

[0085] W: substrate DETAILED DESCRIPTION

[0086] Hereinafter, the exemplary embodiments of the inventive concept will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the inventive concept should not be interpreted as being limited to the following embodiments. The embodiments of the inventive concept are provided to enable those skilled in the art to more fully describe the inventive concept. Therefore, the shapes of the components of the accompanying drawings are exaggerated to highlight a clearer description of the components.

[0087] In an embodiment of the inventive concept, a substrate processing apparatus for processing a substrate by generating plasma in an inductively coupled plasma (ICP) scheme will be described. However, the inventive concept is not limited thereto and may be applied to various apparatuses for processing a substrate by using plasma (e.g., by using a conductively coupled plasma (CCP) scheme or a remote plasma scheme).

[0088] In addition, in the embodiment of the present inventive concept, an electrostatic chuck will be described as an example of a supporting unit. However, the present inventive concept is not limited thereto, and the supporting unit may support the substrate by mechanical clamping or by using vacuum.

[0089] A substrate processing apparatus according to an embodiment of the inventive concept includes an edge ring assembly having excellent anti-plasma properties (anti-etching properties). The edge ring assembly includes: a cover ring having an anti-etching property and configured to surround a substrate while being spaced apart from the substrate; and a focus ring having an anti-etching property and disposed at an inner portion of the cover ring to form a plasma distribution in the substrate. In addition, the edge ring includes a focus ring disposed at an inner portion and a lower portion thereof.

[0090] Figure 1 2 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the inventive concept. Figure 1 , the substrate processing apparatus 10 processes the substrate "W" by using plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate "W". In an embodiment of the inventive concept, a substrate processing apparatus for processing a substrate by using plasma will be described. However, the inventive concept is not limited thereto and may be applied to a variety of apparatuses that perform a process by supplying plasma to a chamber.

[0091] The substrate treating apparatus 10 may include a process chamber 100 , a support unit 200 , a gas supply unit 300 , a plasma source 400 , and a discharge unit 500 .

[0092] The process chamber 100 has a processing space in which a substrate is processed. The process chamber 100 includes a housing 110 , a cover 120 , and a liner 130 .

[0093] The housing 110 has a space with a top opening in its interior. The interior space of the housing 110 is provided as a processing space in which a substrate processing process is performed. The housing 110 is formed of a metal material. The housing 110 may be formed of aluminum. The housing 110 may be grounded. An exhaust hole 102 is formed on the bottom surface of the housing 110. The exhaust hole 102 is connected to an exhaust line 151. Reaction byproducts generated in the process and gases remaining in the interior space of the housing 110 may be exhausted to the outside through the exhaust line 151. In the exhaust process, the pressure inside the housing 110 is reduced to a specific pressure.

[0094] The cover 120 covers the open upper surface of the housing 110. The cover 120 has a plate shape, and the inner space of the housing 110 is closed. The cover 120 may include a dielectric window.

[0095] The bushing 130 is disposed in the interior of the housing 110. The bushing 130 has an inner space, the upper surface and the lower surface of which are open. The bushing 130 may have a cylindrical shape. The bushing 130 may have a radius corresponding to the inner surface of the housing 110. The bushing 130 is disposed along the inner surface of the housing 110.

[0096] A support ring 131 may be formed at an upper portion of the liner 130. The support ring 131 is a ring-shaped plate and protrudes outside the liner 130 along the circumference of the liner 130. The support ring 131 is positioned at the upper end of the housing 110 and supports the liner 130. The liner 130 and the housing 110 may be formed of the same material. The liner 130 may be formed of aluminum. The liner 130 protects the inner surface of the housing 110. For example, in a process of exciting a process gas, an arc discharge is generated in the interior of the process chamber 100. The arc discharge damages the peripheral devices. The liner 130 can prevent the inner surface of the housing 110 from being damaged by the arc discharge by protecting the inner surface of the housing 110. In addition, reaction byproducts generated in the substrate processing process are prevented from being deposited on the inner wall of the housing 110. Compared with the housing 110, the liner 130 is inexpensive and can be easily replaced. Therefore, when the liner 130 is damaged due to arc discharge, the operator may replace the liner 130 with a new one.

[0097] The support unit 200 supports the substrate in the processing space in the interior of the process chamber 100. For example, the support unit 200 is disposed in the interior of the housing 110. The support unit 200 supports the substrate "W". The support unit 200 may be provided by an electrostatic chuck scheme that uses an electrostatic force to attract the substrate "W". Different from this, the support unit 200 may support the substrate "W" by various methods such as mechanical clamping. Hereinafter, the support unit 200 provided by the electrostatic chuck scheme will be described.

[0098] The support unit 200 includes a support plate 220, an electrostatic electrode 223, a passage forming plate 230, an edge ring assembly 240, an insulating plate 250, and a lower cover 270. The support unit 200 may be located in the interior of the process chamber 100 to be spaced apart upward from the bottom surface of the chamber housing 110. The support plate 220 is located at the upper end of the support unit 200. The support plate 220 may be formed of a disc-shaped dielectric substance. The substrate "W" is positioned on the upper surface of the support plate 220. A first supply passage 221 serving as a passage is formed in the support plate 220, and a heat transfer gas is supplied to the bottom surface of the substrate "W" through the first supply passage 221.

[0099] The electrostatic electrode 223 is embedded in the support plate 220. The electrostatic electrode 223 is electrically connected to the first lower power source 223a. An electrostatic force may be applied between the electrostatic electrode 223 and the substrate "W" by a current applied to the electrostatic electrode 223, and the substrate "W" may be attracted to the support plate 220 by the electrostatic force.

[0100] The passage forming plate 230 is located at the lower part of the support plate 220. The bottom surface of the support plate 220 and the upper surface of the passage forming plate 230 may be bonded to each other by an adhesive 236. The passage forming plate 230 has a first circulation passage 231, a second circulation passage 232, and a second supply passage 233. The first circulation passage 231 is provided as a passage through which a heat transfer gas circulates. The second circulation passage 232 is provided as a passage through which a cooling fluid circulates. The second supply passage 233 connects the first circulation passage 231 and the first supply passage 221. The first circulation passage 231 may be formed in the interior of the passage forming plate 230 to have a spiral shape. In addition, the first circulation passage 231 may be arranged so that the passages having a ring shape with different radii have the same center. The first circulation passages 231 may be connected to each other. The first circulation passages 231 are formed at the same height.

[0101] The first circulation path 231 is connected to the heat transfer medium reservoir 231a through the heat transfer medium supply pipeline 231b. The heat transfer medium is stored in the heat transfer medium reservoir 231a. The heat transfer medium includes an inert gas. The heat transfer medium may include helium (He) gas. Helium is supplied to the first circulation path 231 through the supply pipeline 231b, and is supplied to the bottom surface of the substrate "W" after sequentially passing through the second supply path 233 and the first supply path 221. The helium acts as a medium to help the heat exchange between the substrate "W" and the support plate 220. Therefore, the temperature of the substrate "W" is uniform as a whole.

[0102] The second circulation passage 232 is connected to the cooling fluid reservoir 232a through a cooling fluid supply line 232c. The cooling fluid reservoir 232a can store cooling fluid. The cooler 232b can be disposed in the cooling fluid reservoir 232a. The cooler 232b cools the cooling fluid to a specific temperature. Different from this, the cooler 232b can be installed on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation passage 232 through the cooling fluid supply line 232c cools the passage forming plate 230 while circulating along the second circulation passage 232. The passage forming plate 230 can cool the support plate 220 and the substrate "W" together when cooled to maintain the substrate "W" at a specific temperature. Due to the above reasons, the temperature of the lower portion of the support plate 220 and the edge ring assembly 240 is generally lower than the temperature of the upper portion of the support plate 220 and the edge ring assembly 240.

[0103] The edge ring assembly 240 is disposed at an edge region of the support unit 200. The edge ring assembly 240 has a ring shape and is configured to surround the support plate 220 and a substrate supported on the support plate 220. For example, the edge ring assembly 240 is disposed along the circumference of the support plate 220 to support an outer region of the substrate "W". The edge ring assembly 240 allows plasma in the process chamber 100 to be concentrated in a region facing the substrate "W".

[0104] The insulating plate 250 is located at a lower portion of the passage forming plate 230. The insulating plate 250 is formed of an insulating material, and electrically insulates the passage forming plate 230 and the lower cover 270.

[0105] The lower cover 270 is located at the lower end of the support unit 200. The lower cover 270 is spaced apart upward from the bottom surface of the housing 110. A space with a top opening is formed in the interior of the lower cover 270. The upper surface of the lower cover 270 is covered by the insulating plate 250. Therefore, the outer radius of the cross section of the lower cover 270 is the same as the outer radius of the insulating plate 250. A lift pin module (not shown) that receives the transferred substrate "W" from the transfer member at the outside to the electrostatic chuck and positions the substrate "W" on the support plate may be located in the inner space of the lower cover 270.

[0106] The lower cover 270 has a connecting member 273. The connecting member 273 connects the outer surface of the lower cover 270 and the inner wall of the housing 110. A plurality of connecting members 273 may be provided on the outer surface of the lower cover 270 at specific intervals. The connecting member 273 supports the supporting unit 200 in the interior of the process chamber 100. In addition, the connecting member 273 is connected to the inner wall of the housing 110 so that the lower cover 270 is electrically grounded.

[0107] The first power line 223c connected to the first lower power source 223a, the heat transfer medium supply line 231b connected to the heat transfer medium reservoir 231a, and the cooling fluid supply line 232c connected to the cooling fluid reservoir 232a may extend into the lower cover 270 through the inner space of the connection member 273.

[0108] The gas supply unit 300 supplies gas into the processing space in the process chamber 100. The gas supplied by the gas supply unit 300 includes a process gas for substrate processing. In addition, the gas supplied by the gas supply unit 300 may include a cleaning gas for cleaning the inside of the process chamber 100.

[0109] The gas supply unit 300 includes a gas supply nozzle 310, a gas supply line 320, and a gas storage unit 330. The gas supply nozzle 310 is installed at the central portion of the cover 120. An ejection hole is formed on the bottom surface of the gas supply nozzle 310. The ejection hole is located below the cover 120 and supplies gas into the interior of the process chamber 100. The gas supply line 320 connects the gas supply nozzle 310 and the gas storage unit 330. The gas supply line 320 supplies the gas stored in the gas storage unit 330 into the gas supply nozzle 310. A valve 321 is installed in the gas supply line 320. The valve 321 opens and closes the gas supply line 320 and adjusts the flow rate of the gas supplied through the gas supply line 320.

[0110] The plasma source 400 generates plasma from a gas supplied into a processing space in the interior of the process chamber 100. The plasma source 400 is disposed outside the processing space of the process chamber 100. According to an embodiment, an inductively coupled plasma (ICP) source may be used as the plasma source 400. The plasma source 400 includes an antenna seal 410, an antenna 420, and a radio frequency (RF) power source 430.

[0111] The antenna seal 410 has a cylindrical shape with an open bottom. The antenna seal 410 has a space inside it. The antenna seal 410 has a diameter corresponding to the process chamber 100. The lower end of the antenna seal 410 can be detachably arranged in the cover 120. The antenna 420 is placed in the interior of the antenna seal 410. The antenna 420 is a spiral coil wound multiple times and is connected to the RF power supply 430. The antenna 420 is supplied with power from the RF power supply 430. The RF power supply 430 may be located outside the process chamber 100. The antenna 420 to which power has been supplied can form an electromagnetic field in the processing space of the process chamber 100. The process gas is excited to a plasma state by the electromagnetic field.

[0112] The discharge unit 500 is located between the inner wall of the housing 110 and the support unit 200. The discharge unit 500 includes a discharge plate 510 having a through hole 511. The discharge plate 510 has a ring shape. The discharge plate 510 has a plurality of through holes 511. The process gas provided to the housing 110 passes through the through holes 511 of the discharge plate 510 and is discharged through the discharge hole 102. The flow rate of the process gas can be controlled according to the shape of the discharge plate 510 and the shape of the through hole 511.

[0113] The heater is embedded in the support plate 220. The heater 225 is located under the electrostatic electrode 223. The heater 225 generates heat by resisting the exothermic power (current) applied by the heater cable 225c. The generated heat is transferred to the substrate "W" through the support plate 220. The substrate "W" is maintained at a specific temperature by the heat generated by the heater 225.

[0114] The heater power supply unit 225a is configured to apply a heating power to the heater 225. A filter unit (illustration omitted) for disturbing a high frequency wave from being introduced into the heater power supply unit 225a may be provided between the heater power supply unit 225a and the heater 225. As an example, when a high frequency power of 13.5 MHz is applied by the plasma source 400 to generate plasma, the high frequency power may be designed to, for example, cause an exothermic power of an AC power of 60 Hz to pass through the heater cable 225c and prevent an RF of 13.56 MHz from being introduced into the heater power supply unit 225a. The filter unit may be provided with components such as a capacitor, an inductor, and the like.

[0115] Hereinafter, an edge ring assembly 240 of a substrate processing apparatus according to an embodiment of the inventive concept will be described. Figure 2 yes Figure 1 , and is a cross-sectional view of an edge ring assembly constituting a substrate processing apparatus according to an embodiment of the inventive concept. Figure 1 and Figure 2 to describe.

[0116] The edge ring assembly 240 may include a focus ring 245, an insulating ring 246, and a cover ring 247. The outer surface of the support plate 220 and the inner surface of the focus ring 245 may be spaced apart from each other by a predetermined distance. The focus ring 245 adjusts the sheath and plasma interface.

[0117] The focus ring 245 is formed of a conductive material. The focus ring 245 may include silicon (Si), silicon carbide (SiC), and the like. The first layer 241 and the second layer 242 may be formed on the upper surface of the focus ring 245. The first layer 241 and the second layer 242 may be divided with reference to the height of the focus ring 245. The upper surface of the first layer 241 is exposed in the inner region of the focus ring 245. The first layer 241 may be disposed at a height corresponding to the upper surface of the support plate 220, and may support the outer region of the substrate "W". As an example, the first layer 241 may be disposed at the same height as the upper surface of the support plate 220, and may contact the lower surface of the outer side of the substrate "W". In addition, the first layer 241 may be disposed lower than the upper surface of the support plate 220 by a preset size, and a preset gap may be formed between the lower surface of the outer side of the substrate and the first layer 241. The first layer 241 may have a flat surface parallel to the lower surface of the substrate "W". The second layer 242 may be formed to be higher than the first layer 241, and may protrude upward from an outer end of the first layer 241. According to an embodiment, the height of the second layer 242 may be at least the same as or higher than the upper surface of the substrate "W" loaded on the support plate 220. Due to the height difference between the first layer 241 and the second layer 242, the shield, the plasma interface, and the electric field are adjusted so that the plasma can be guided to be concentrated on the substrate "W".

[0118] The insulating ring 246 may be disposed below the focus ring 245. The insulating ring 246 electrically insulates the path forming plate 230 from the focus ring 245. The insulating ring 246 may include a dielectric material such as quartz, ceramic, yttrium oxide (Y 2 O 3 ), aluminum oxide (Al 2 O 3 Meanwhile, the insulating ring 246 may be omitted, and the focusing ring 245 may be positioned to directly contact the via forming plate 230.

[0119] In this embodiment, the cover ring 247 may be located in an outward direction of the focus ring 245. The cover ring 247 may have a ring shape to surround an outer region of the focus ring 245. The cover ring 247 prevents a side surface of the focus ring 245 from being directly exposed to plasma or prevents plasma from being introduced into a side surface of the focus ring 245.

[0120] The cover ring 247 includes a quartz material, the surface of which is ion-strengthened to improve the anti-corrosion property (plasma resistance property). The strengthened surface layer 247b of the cover ring 247 is ion-strengthened to improve the anti-corrosion property (plasma resistance property). Figure 3 Schematically illustrated Figure 2 The molecular bonding structure between the reinforced surface layer 247b of the covering ring 247 and the material layer 247a.

[0121] refer to Figure 3 The cover ring 247 may include a main material of quartz (SiO 2 ) material layer 247a, and an ion-strengthened surface layer 247b having a thickness h1 of 10 μm to 500 μm. The main material is quartz (SiO 2 The material layer 247a of the present invention can be formed of amorphous glass quartz. The strengthened surface layer 247b is formed by 2 ) is formed by injecting a network modifier into the blank areas between the network structures. For example, the network modifier is Na + , K + , Ca 2+ or Mg 2+ ions as surface strengthening ions, and the ions are implanted into the quartz (SiO 2 ) in the blank parts of the molecular bond network structure. In the network modifier, Na + , K + , Ca 2+ or Mg 2+ The radius is larger than Si 4+ The radius of the ion varies slightly depending on the paper and measurement conditions, but considering the effective ionic radius of RD Shannon (1976) "Revised effective ionic radii and systematic studies of interatomic distances inhalides and chalcogenides", the radius of the network modifier is larger than that of Si 4+ The radius, Na + The ionic radius of K is 102 pm. + The ionic radius of Ca is 138 pm. 2+ The ionic radius of Mg is 100 pm. 2+ The ionic radius of Si is 72 pm, and 4+The ion radius is 40 pm. Compressive stress is generated around the mesh structure on the surface of the cover ring 247, wherein the strengthened surface layer 247b is formed by injecting a mesh modifier according to an embodiment of the inventive concept, so that the mechanical strength and anti-corrosion properties of the quartz material are enhanced. Since the cover ring 247 has excellent mechanical strength and excellent anti-corrosion properties, the replacement cycle of the cover ring 247 can be improved.

[0122] In conventional ion strengthening, a technique of exchanging ions of the surface of a constituent material layer (e.g., a quartz material layer) with ions of a large radius has been discussed. For example, this is a technique of including aluminum (Al) or yttrium (Y) powder in a quartz material powder to exchange ions of quartz when sintering quartz. Since this technique requires a high melting temperature, production performance is reduced and costs are increased, mold manufacturing necessary for high-temperature melting and maintenance costs are increased, uniform dispersion of a multi-component system becomes difficult due to high viscosity during melting, and production performance is low because processing residues are left due to the need for additional processing depending on their shape.

[0123] However, the surface of the quartz member (the cover ring in the embodiment) according to the embodiment of the inventive concept can be strengthened in a low temperature environment, and the replacement cycle of the quartz member having the strengthened surface can be improved due to the improved anti-corrosion property. In addition, the cover ring 247 having the strengthened surface manufactured according to the embodiment of the inventive concept can protect the focus ring 245 and the insulation ring 246 located at the lower end of the cover ring 247 from being exposed to plasma.

[0124] In addition, since the quartz member (according to the embodiment, the cover ring) according to the embodiment of the inventive concept is 4 The sublimation point of 1,418°C is extremely high compared to, for example, CaF 2 The sublimation point of MgF is 1,418°C, that of NaF is 1,695°C, that of KF is 1,502°C, and that of MgF 2 The sublimation point of F is 2,260° C., so when exposed to a plasma environment including fluorine (“F”), the quartz member does not even sublime during the plasma reaction and the surface constituting components applied to the quartz material make it possible to prevent etching by F radicals. Figure 4 is a view illustrating a substrate processing apparatus according to another embodiment of the inventive concept. Figure 5 for Figure 4 , and is a cross-sectional view of an edge ring assembly constituting a substrate processing apparatus according to another embodiment of the inventive concept. The edge ring assembly 1240 according to another embodiment of the inventive concept will be referred to as Figure 4 and Figure 5 to describe.

[0125] The edge ring assembly 1240 includes a focus ring 1245 , an insulating ring 1246 , an inner cover ring 1248 , and an outer cover ring 1247 .

[0126] The focus ring 1245 is positioned on the insulating ring 1246. The inner cover ring 1248 is positioned on the outer upper surface of the focus ring 1245 and protects the outer upper surface of the focus ring 1245. The outer cover ring 1247 is provided on the outer sides of the focus ring 1245 and the inner cover ring 1248.

[0127] The focus ring 1245 is formed of a conductive material. The focus ring 1245 may include silicon (Si), silicon carbide (SiC), and the like. The upper surface of the focus ring 1245 may be formed at different heights. The inner area of ​​the focus ring 1245 may be set at a height corresponding to the upper surface of the support plate 220, and may support the outer area of ​​the substrate "W". As an example, the inner area of ​​the focus ring 1245 may be set at the same height as the upper surface of the support plate 220, and may contact the lower surface of the outer side of the substrate "W". In addition, the inner area of ​​the focus ring 1245 may be set to be lower than the upper surface of the support plate 220 by a preset size, and a preset gap may be formed between the outer lower surface of the substrate "W" and the inner area of ​​the focus ring 1245. The focus ring 1245 may protrude upward as the focus ring moves from the inner area toward the outer area of ​​the focus ring. According to an embodiment, the focus ring 1245 may include a portion that is inclined from the inner area toward the outer area to protrude more than the inner area. Due to the height difference between the inner region and the protruding portion of the focus ring 1245, the shield, plasma interface, and electric field are adjusted so that the plasma can be guided to be focused on the substrate "W". The outer region of the focus ring 1245 can be recessed by the height of the inner cover ring 1248 so that the inner cover ring 1248 can be positioned on the outer region of the focus ring 1245.

[0128] The inner cover ring 1248 may protect the outer upper portion of the focus ring 1245. The portion of the inner cover ring 1248 that contacts the focus ring 1245 may include an amorphous plasma resistant high silica material containing 96.0 wt % to 99.5 wt % amorphous SiO 2 and contains 0.5 wt% to 4.0 wt% of Al 2 O 3 In this embodiment, the permittivity of the inner cover ring 1248 may be higher than the permittivity of the outer cover ring 1247. The first permittivity of the inner cover ring 1248 may be lower than the permittivity of the focus ring 1245.

[0129] The main material of the inner cover ring 1248 is amorphous SiO 2 and contains 0.5 wt% to 4.0 wt% of corrosion-resistant Al 2 O 3, so that glass material characteristics with amorphous characteristics and excellent plasma resistance can be achieved. Amorphous glass materials are not selectively ablated due to the absence of grain boundaries, and therefore have excellent anti-corrosion properties in a plasma etching environment and can reduce particles generated during the process. When the inner cover ring 1248 contains 96.0 wt % to 99.5 wt % of amorphous SiO 2 When the corrosion resistance is improved by uniformly distributing the corrosion-resistant Al 2 O 3 (0.5 wt % to 4.0 wt %) is significantly improved during the plasma etching process. When 96.0 wt % to 99.5 wt % of high silica amorphous glass material is used, the process can be prevented from being damaged by SiF vaporized at low temperature. 4 The reactants are seriously affected, and the life of the chamber and the replacement cycle of the facilities can be improved due to the improvement of the plasma resistance.

[0130] The outer cover ring 1247 includes a quartz material, and the surface of the quartz material is ion-strengthened to improve the anti-corrosion property (anti-plasma property). The strengthened surface layer 1247b of the outer cover ring 1247 is ion-strengthened to improve the anti-corrosion property (anti-plasma property). The molecular bonding structure between the strengthened surface layer 1247b of the outer cover ring 1247 and the material layer 1247a is the same as Figure 3 The bonding structure of the embodiment is the same, and therefore by Figure 3 The description of the embodiment illustrated in FIG.

[0131] The outer peripheral portion of the outer cover ring 1247 may be bent to prevent discharge between the outer cover ring 1247 and other auxiliary components. That is, the upper surface and the outer wall of the outer cover ring 1247 may be bent so that the cross section of the outer cover ring 1247 has a curved fan shape.

[0132] Although the cover ring of the same material as the inner cover ring 1248 has high corrosion resistance, when mixed and using 96.0 wt % to 99.5 wt % of high silica amorphous glass and 0.5 wt % to 4.0 wt % of Al 2 O 3 The high viscosity produced during the coating process makes it difficult to evenly disperse (mix) the materials when manufacturing the cover ring, but when the cover ring is arranged within the outer cover ring 1247 and positioned on the focusing ring 1245 as in the embodiment of the concept of the present invention, the restrictions on size and shape are reduced, so that even dispersion can be achieved.

[0133] Because the outer cover ring 1247 and the substrate “W” are spaced apart from each other due to the inner cover ring 1248 , the substrate “W” may be prevented from being severely affected by a network modifier such as Na, Ca, K or Mg that may be etched in the outer cover ring 1247 .

[0134] The insulating ring 1246 may be disposed below the focus ring 1245. The insulating ring 1246 electrically insulates the path forming plate 230 and the focus ring 1245. The insulating ring 1246 may include a dielectric material such as quartz, ceramic, yttrium oxide (Y 2 O 3 ), aluminum oxide (Al 2 O 3 Meanwhile, the insulating ring 1246 may be omitted, and the focusing ring 1245 may be positioned to directly contact the passage forming plate 230.

[0135] Figure 6 is a flowchart illustrating a wetting ion strengthening method using a quartz material according to an embodiment of the inventive concept; and a method of manufacturing a quartz material according to an embodiment of the inventive concept will refer to Figure 6 According to the embodiment, the preparation includes CaCl 2 , KCl, NaCl or MgCl 2 The processed quartz material (e.g., the quartz material processed for the cover ring) is immersed in the prepared salt bath under a first temperature condition (step S120). The first temperature may be room temperature. In another embodiment, the first temperature may be a temperature higher than room temperature. Because CaCl 2 , KCl, NaCl or MgCl 2 Soluble, so for example Ca 2+ , K + 、Na + or Mg 2+ The network modifier exists in the water in an ionic state, and the network modifier existing in an ionic state reacts with the surface of the quartz material to penetrate into the network structure of the quartz material and strengthen the surface of the quartz material. The time period of immersion in the salt bath is the time period for the network modifier to penetrate into the network structure of the quartz material to reach a thickness of 10 μm to 500 μm. Figure 6 According to the cited method for manufacturing a quartz material according to the embodiment, the surface of the quartz material can be strengthened under the condition of room temperature, so that the production cost can be reduced due to the absence of high temperature conditions, and uniform strengthening of the surface can be possible for a wide area compared to the following case: melting at a high temperature of 2000° C. or higher is required to mix Al or Y with quartz.

[0136] Figure 71 is a flow chart illustrating a dry ion strengthening method using a quartz material according to another embodiment of the inventive concept. The method of manufacturing a quartz material according to an embodiment of the inventive concept will refer to Figure 7 According to the embodiment, a paste containing Ca 2+ , K + 、Na + or Mg 2+ As an example, the material of the network modifier includes Ca 2+ , K + 、Na + or Mg 2+ The paste material can be CaCl 2 , KCl, NaCl or MgCl 2 The prepared paste material is reacted with the surface of the quartz material (e.g., the quartz material processed for the cover ring) at a second temperature, the second temperature being the melting point of the paste material or higher (step S220). According to an embodiment, the network modifier is injected into the blank parts of the network structure by depositing the prepared paste material on the surface of the processed quartz material (e.g., the quartz material processed for the cover ring) and heating the paste material at the melting point or higher. Exemplarily, because CaCl 2 The melting point of is 772℃, the melting point of KCl is 770℃, the melting point of NaCl is 801℃, and the melting point of MgCl 2 The melting point of is 714°C, so the second temperature can be set to about 700°C to 850°C. The time period for the surface reaction is the time period for the network modifier to penetrate into the network structure of the quartz material to a thickness of 10 μm to 500 μm. Figure 7 According to the cited method for manufacturing a quartz material according to an embodiment, the surface of the quartz material can be strengthened under the condition of a temperature ranging from 700° C. to 850° C., so that the production cost can be reduced due to the absence of high temperature conditions, and uniform strengthening of the surface can be possible for a wide area compared to the following case: melting at a high temperature of 2000° C. or higher is required to mix Al or Y with quartz.

[0137] According to a cover ring provided for an edge ring assembly and a substrate processing apparatus including the same according to an embodiment of the inventive concept, a substrate may be uniformly processed and plasma may be distributed so that substrate processing efficiency may be improved.

[0138] A cover ring provided for an edge ring assembly according to an embodiment of the inventive concept has high plasma resistance, generates few particles, and increases a parts replacement cycle.

[0139] According to a method for manufacturing a quartz component having improved plasma properties, the quartz component is exposed to plasma including fluorine, and production costs may be reduced because the quartz component is manufactured under relatively low temperature conditions.

[0140] A cover ring provided for an edge ring assembly according to an embodiment of the present inventive concept may be uniformly reinforced over a wide surface area.

[0141] The effects of the inventive concept are not limited to the above-mentioned effects. Effects not mentioned will be clearly understood by those skilled in the art to which the inventive concept relates based on the specification and the accompanying drawings.

[0142] The above detailed description illustrates the inventive concept. In addition, the above content describes exemplary embodiments of the inventive concept, and the inventive concept can be used in various other combinations, variations and environments. That is, the inventive concept can be modified and corrected without departing from the scope of the inventive concept disclosed in the specification, the equivalent scope of the written disclosure, and / or the technical or knowledge scope of those skilled in the art. The written embodiments describe the best state of the technical spirit for implementing the inventive concept, and various changes required for the detailed application fields and purposes of the inventive concept can be made. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept in the disclosed embodiment state. In addition, it should be interpreted that the attached patent application scope includes other embodiments.

Claims

1. A substrate processing device, comprising: a process chamber configured to provide a processing space in an interior thereof; a supporting unit configured to support a substrate in the processing space; a gas supply unit configured to supply a process gas into the processing space; as well as a plasma source configured to generate plasma from the process gas, The support unit comprises: a support plate on which the substrate is positioned; and an edge ring assembly configured to surround the substrate supported on the support plate and configured to form the plasma in the substrate, and Wherein the edge ring assembly comprises: a focus ring formed of a first material and configured to form a distribution of the plasma in the substrate; an outer cover ring disposed in the region of the substrate, the outer cover ring being on the outer side of the focus ring, being formed of a second material having a mesh structure and comprising a strengthening surface layer, the strengthening surface layer being exposed to the plasma and provided by injecting a mesh modifier into empty portions of the mesh structure; an inner cover ring, the inner cover ring being disposed between the outer cover ring and the focus ring and being located above an outer region of the focus ring; Wherein, the network modifier is Na + , K + , Ca 2+ Mg 2+ Any one or more of Wherein, the strengthening surface layer has a thickness of 10 μm to 500 μm, Wherein, the outer cover ring comprises: upper surface; side surfaces; and a curved surface disposed between the upper surface and the side surface, wherein the strengthening surface layer is provided on the upper surface, the side surface and the curved surface, and The permittivity of the inner cover ring is higher than the permittivity of the outer cover ring, and the permittivity of the inner cover ring is lower than the permittivity of the focus ring.

2. The substrate processing apparatus according to claim 1, wherein the first material is a conductive material, and The second material is a material having higher insulation performance than the first material.

3. The substrate processing apparatus according to claim 1, wherein the first material is silicon carbide (SiC), and The second material is quartz having an amorphous network structure.

4. The substrate processing apparatus according to claim 1, wherein the ionic radius of the network modifier is larger than that of Si 4+ ionic radius. 5 . The substrate processing apparatus according to claim 1 , wherein the inner cover ring is formed of a third material in which SiO 2 and Al 2 O 3 are mixed at a first ratio. 6 . The substrate processing apparatus of claim 1 , wherein the inner cover ring comprises 96.0 wt % to 99.5 wt % SiO 2 , and 0.5 wt % to 4.0 wt % Al 2 O 3 . The substrate processing apparatus according to claim 1 , wherein the process gas is a fluorine-containing gas.

8. An edge ring assembly configured to surround a substrate and form a plasma in the substrate in an apparatus for processing the substrate by plasma, the cover ring comprising: a focus ring formed of a first material and configured to form a distribution of the plasma in the substrate; an outer cover ring disposed in the region of the substrate, the outer cover ring being on the outer side of the focus ring, being formed of a second material having a mesh structure and including a strengthening surface layer, the strengthening surface layer being exposed to the plasma and having an inner diameter greater than a diameter of the substrate so as to be spaced apart from the substrate by a specific distance, being formed of a material including a mesh structure and being provided by injecting a mesh modifier into a blank portion of the mesh structure; as well as an inner cover ring, the inner cover ring being disposed between the outer cover ring and the focus ring and being located above an outer region of the focus ring; in, The network modifier is Na + , K + , Ca 2+ Mg 2+ Any one or more of Wherein, the strengthening surface layer has a thickness of 10 μm to 500 μm, The outer cover ring comprises: upper surface; side surfaces; and a curved surface disposed between the upper surface and the side surface, wherein the strengthening surface layer is provided on the upper surface, the side surface and the curved surface, and The permittivity of the inner cover ring is higher than the permittivity of the outer cover ring, and the permittivity of the inner cover ring is lower than the permittivity of the focus ring. 9 . The edge ring assembly of claim 8 , wherein the material of the outer cover ring and the inner cover ring is quartz having an amorphous network structure.

10. The edge ring assembly of claim 8, wherein the ionic radius of the network modifier is larger than that of Si 4+ ionic radius.

11. The edge ring assembly of claim 8, wherein a process gas used to form the plasma is a fluorine-containing gas, and the enhanced surface layer is exposed to fluorine radicals excited from the process gas.

12. A method for manufacturing an outer cover ring of the edge ring assembly according to claim 8, the method comprising the steps of: Prepare a salt bath including a network modifier having an ionic radius greater than that of Si 4+ The ionic radius of immersing the cover ring in the salt bath at a first temperature, the cover ring being shaped from a material including a mesh structure; in, The salt bath comprises an aqueous solution of CaCl2, KCl, NaCl or MgCl2, The strengthened surface layer has a thickness of 10 μm to 500 μm from a portion exposed to the plasma. The method of claim 12 , wherein the first temperature is room temperature.

14. A method for manufacturing a cover ring of the edge ring assembly according to claim 8, the method comprising the steps of: Prepare a paste material including a network modifier having an ionic radius greater than that of Si 4+ The ionic radius of causing the surface of the cover ring and the paste material to react with each other at a second temperature, wherein the shape of the cover ring is processed from a material including a mesh structure, and the second temperature is a melting point of the paste material or a higher temperature; in, The paste material includes one or more of CaCl 2 , KCl, NaCl and MgCl 2 .

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