Semiconductor process apparatus and gas distribution device therefor

Abstract

The application discloses a semiconductor process equipment and a gas distribution device thereof, and relates to the technical field of semiconductor processing equipment. The semiconductor process equipment comprises a cavity and a susceptor arranged in the cavity. The gas distribution device comprises a gas distribution plate arranged in the cavity and opposite to the susceptor. The gas distribution plate is provided with a plurality of gas distribution holes for inputting process gas into the cavity. The side of the gas distribution plate facing the susceptor is provided with a recessed area and a protruding area. The distance between the recessed area and the susceptor is a first distance, and the distance between the protruding area and the susceptor is a second distance. The first distance is greater than the second distance. In the above scheme, the recessed area and the protruding area make the distances between the parts of the gas distribution plate and the susceptor different, so as to adjust the electric field between the gas distribution plate and the susceptor, make the electric field intensity between the gas distribution plate and the susceptor more uniform, and further make the density of the insulating medium film more uniform.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor processing equipment, and in particular to a semiconductor process equipment and a gas distribution device thereof. BACKGROUND

[0002] With the development of semiconductor technology, the application of insulating dielectric thin film is more and more widely. In the related art, the equipment for depositing the insulating dielectric thin film ionizes the process gas in the semiconductor equipment by increasing the radio frequency power, and is used for depositing the insulating dielectric thin film. In the related art, in order to avoid the metal contamination in the equipment caused by the base electrode of metal material, a layer of ceramic is arranged between the base electrode and the wafer to isolate the base electrode of metal material. Since the electric charge on the surface of the ceramic layer for isolating the base electrode cannot be timely conducted away, the base surface exists electric potential, causing uneven grounding of the base, and further causing poor uniformity of the density of the dielectric thin film in the semiconductor processing process. SUMMARY

[0003] The present application discloses a semiconductor process equipment and a gas distribution device thereof to solve the problem of poor uniformity of the density of the insulating dielectric thin film.

[0004] In order to solve the above problems, the technical scheme adopted by the present application is as follows:

[0005] The gas distribution device for the semiconductor process equipment disclosed in the embodiments of the present application, the semiconductor process equipment comprises a cavity and a base arranged in the cavity. The gas distribution device comprises a gas distribution plate, the gas distribution plate is arranged in the cavity and is arranged opposite to the base, the gas distribution plate is provided with a plurality of gas distribution holes, and the plurality of gas distribution holes are used for inputting process gas into the cavity.

[0006] The side of the gas distribution plate facing the base has a recessed area and a protruding area, the distance between the recessed area and the base is a first distance, the distance between the protruding area and the base is a second distance, and the first distance is greater than the second distance.

[0007] Based on the gas distribution device, the present application further provides a semiconductor process equipment. The semiconductor process equipment comprises a cavity, a base and the gas distribution device, wherein the base is used for placing a wafer; the gas distribution device is fixed to the cavity and is arranged opposite to the base.

[0008] The technical scheme adopted by the present application can achieve the following beneficial effects:

[0009] The gas distribution device disclosed by the embodiment of the present application sets recessed areas and convex areas on the side of the gas distribution plate close to the pedestal, and the distance between the recessed areas and the pedestal is greater than the distance between the convex areas and the pedestal, so that the electric field intensity between the gas distribution device and the pedestal is more uniform, and the uniformity of the density of the dielectric thin film is improved, the etching rate of each part of the dielectric thin film is more uniform, and the yield of the semiconductor process product is improved. BRIEF DESCRIPTION OF DRAWINGS

[0010] The drawings described herein are used to provide further understanding of the present application, and form a part of the present application. The illustrative embodiments of the present application and their description serve to explain the present application, and do not constitute an improper limitation of the present application. In the drawings:

[0011] Figure 1 The sectional view of the semiconductor process equipment disclosed by an embodiment of the present application is shown in the figure;

[0012] Figure 2 The schematic view of the gas distribution device disclosed by an embodiment of the present application is shown in the figure;

[0013] Figure 3 The local enlarged view of the gas distribution device disclosed by the first embodiment of the present application is shown in the figure;

[0014] Figure 4 The local enlarged view of the gas distribution device disclosed by the second embodiment of the present application is shown in the figure;

[0015] Figure 5 The top view of the gas distribution device disclosed by an embodiment of the present application is shown in the figure;

[0016] Figure 6 The schematic view of the etching rate of each test point of the wafer when the distance between the gas distribution device and the pedestal is 14mm is shown in the figure;

[0017] Figure 7 The schematic view of the etching rate of each test point of the wafer when the distance between the gas distribution device and the pedestal is 17mm is shown in the figure;

[0018] Figure 8 The comparison schematic view of the etching rate of each test point of the wafer when the distance between the gas distribution device and the pedestal is 14mm and 17mm respectively is shown in the figure;

[0019] Figure 9 The gas supply pipeline diagram of the semiconductor process equipment disclosed by the embodiment of the present application is shown in the figure;

[0020] Figure 10 The semiconductor process flow chart disclosed by the embodiment of the present application is shown in the figure.

[0021] In the figure: 101 - recessed area; 102 - convex area; 103 - transition area; 104 - outer ring; 105 - inner ring; 100 - gas distribution plate; 110 - gas distribution hole; 120 - groove; 130 - mounting portion; 200 - susceptor; 300 - back plate; 400 - gas distribution cavity; 500 - cavity; 600 - reaction cavity; 700 - flow uniformizing grid. DETAILED DESCRIPTION

[0022] In order to make the objects, technical solutions, and advantages of the present application clearer, the technical solutions of the present application will be described below in connection with specific embodiments of the present application and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0023] The technical solutions disclosed in the various embodiments of the present application will be described below in connection with Figures 1 to 10 .

[0024] In connection with Figures 1 to 5 , the semiconductor processing equipment includes a cavity 500 and a susceptor 200 arranged in the cavity 500. The gas distribution device for the semiconductor processing equipment disclosed in the present application includes a gas distribution plate 100. The gas distribution plate 100 is arranged in the cavity 500 and is arranged opposite to the susceptor 200. The gas distribution plate 100 is provided with a plurality of gas distribution holes 110, and the plurality of gas distribution holes 110 are used for inputting process gas into the cavity 500. Exemplarily, a reaction cavity 600 is formed between the gas distribution plate 100 and the susceptor 200. The reaction cavity 600 can provide space for placing a semiconductor processing product and reacting process gas. Process gas enters the reaction cavity 600 along the gas distribution hole 110. Exemplarily, the semiconductor processing product can be a wafer. Specifically, during the semiconductor processing process, it is necessary to deposit an insulating medium film on a wafer. Exemplarily, the process gas can be a gas participating in a chemical reaction and a gas used for cleaning a gas pipeline or the reaction cavity 600. Alternatively, the process gas can be oxygen (O2), argon (Ar), a precursor reaction source, etc.

[0025] In connection with Figure 1 , Figure 2 and Figure 5 , the side of the gas distribution plate 100 facing the susceptor 200 has a recessed area 101 and a convex area 102, the distance between the recessed area 101 and the susceptor 200 is a first distance, the distance between the convex area 102 and the susceptor 200 is a second distance, and the first distance is greater than the second distance.

[0026] In the above case, the recessed area 101 and the protruding area 102 are arranged on the side of the gas distribution plate 100 facing the susceptor 200, so that the distances between the gas distribution plate 100 and the susceptor 200 at different positions are different. Then, by adjusting the positions of the recessed area 101 and the protruding area 102, and adjusting the depth of the recessed area 101 or the height of the protruding area 102, the electric field intensity between the gas distribution plate 100 and the susceptor 200 at different positions can be adjusted, so that the electric field intensity between the gas distribution plate 100 and the susceptor 200 is more uniform, and the difference in the density of the dielectric film at different positions is reduced, and the uniformity of the density of the dielectric film is improved. It should be noted that the higher the density of the dielectric film, the smaller the etching rate of the corresponding dielectric film in the semiconductor process. Therefore, the better the uniformity of the density of the dielectric film, the higher the yield of the wafer.

[0027] In an alternative embodiment, the difference between the first distance and the second distance is greater than 1 mm and less than or equal to 6 mm. For example, the difference between the first distance and the second distance can be 3 mm. Figure 6 For the case where the distance between the gas distribution device and the susceptor 200 is 14 mm, the etching rate distribution diagram corresponding to each test point of the wafer is shown in the following table. Figure 7 For the case where the distance between the gas distribution device and the susceptor 200 is 17 mm, the etching rate distribution diagram corresponding to each test point of the wafer is shown in the following table. Figure 8 For the case where the distance between the gas distribution device and the susceptor 200 is 14 mm and the distance between the gas distribution device and the susceptor 200 is 17 mm, the comparison diagram of the etching rate corresponding to each test point of the wafer is shown in the following table. It should be noted that, Figure 8 In the above table, the vertical axis represents the etching rate, and the horizontal axis represents each test point. The test points are plotted in the following order: from the center of the wafer to the outer circle 104 of the wafer. Specifically, the center of the wafer is the first test point, and each test point is plotted in order of priority from the center of the wafer. In the case where multiple test points are equidistant from the center of the wafer, each test point can be plotted in a clockwise or counterclockwise direction. Therefore, Figure 8 In the above table, the etching rates of the first test point to the 81st test point are the etching rates corresponding to the test points located in the inner circle 105. The etching rates of the 82nd test point to the 121st test point are the etching rates corresponding to the test points located in the outer circle 104. From Figure 8 It can be directly obtained that, in the case where the distance between the gas distribution device and the susceptor 200 is 17 mm, the etching rate corresponding to the semiconductor process is greater than that in the case where the distance between the gas distribution device and the susceptor 200 is 17 mm. Therefore, the etching rate corresponding to the semiconductor process can be adjusted by changing the distance between the gas distribution device and the susceptor 200.

[0028] Exemplarily, the etching rate corresponding to each region can be obtained by testing. Then, the semiconductor process etching region can be divided into at least two sub-etching regions according to the size of the etching rate, so as to adjust the etching rate corresponding to each region by setting the recessed region 101 or the protruding region 102 on the side of the gas distribution plate 100 facing the susceptor 200.

[0029] In an alternative embodiment, the number of recessed regions 101 or protruding regions 102 on the side of the gas distribution plate 100 facing the susceptor 200 can be multiple. Further, the spacing between each recessed region 101 and / or each protruding region 102 and the susceptor 200 can not be completely equal. Specifically, the spacing between the corresponding recessed region 101 or protruding region 102 and the susceptor 200 can be set according to the etching rate corresponding to the semiconductor process of each region, so as to make the etching rate of the semiconductor process of each region more uniform.

[0030] In an alternative embodiment, the recessed region 101 is an annular region, and the protruding region 102 is a circular region. The recessed regions 101 and the protruding regions 102 are sequentially distributed along the radial direction of the gas distribution plate 100 inwardly. Further, in the case that the number of the protruding regions 102 and the recessed regions 101 is multiple, the multiple protruding regions 102 include circular protruding regions 102 and annular protruding regions 102, and the circular protruding regions 102 and the annular protruding regions 102 are sequentially distributed along the radial direction of the gas distribution plate 100 outwardly. Further, the recessed regions 101 and the protruding regions 102 can be alternately distributed along the radial direction of the gas distribution plate 100 outwardly. In another embodiment, the protruding region 102 is an annular region, and the recessed region 101 is a circular region. The recessed regions 101 and the protruding regions 102 are sequentially distributed along the radial direction of the gas distribution plate 100 outwardly. In the case that the number of the recessed regions 101 and the protruding regions 102 is multiple, the multiple recessed regions 101 include circular recessed regions 101 and annular recessed regions 101, and the circular recessed regions 101 and the annular recessed regions 101 are sequentially distributed along the radial direction of the gas distribution plate 100 outwardly. Further, the recessed regions 101 and the protruding regions 102 can be alternately distributed along the radial direction of the gas distribution plate 100 outwardly.

[0031] It should be noted that the number and arrangement of the recessed regions 101 and the protruding regions 102 are related to the distribution of the etching rate corresponding to the semiconductor process in the semiconductor equipment. Therefore, the specific number and arrangement of the recessed regions 101 and the protruding regions 102 are not limited in the present embodiment.

[0032] Reference Figure 6 and Figure 7In the semiconductor process etching region, the etching rate of the inner circle 105 is greater than the etching rate of the outer circle 104, and thus the semiconductor process etching region can be divided into two regions of the inner circle 105 and the outer circle 104. Further, the etching rate of the inner circle 105 can be equal to the etching rate of the outer circle 104 by changing the distance between the gas distribution device and the pedestal 200. Figure 8 It can be seen that the etching rate of each test point in the outer circle 104 corresponding to the distance of 17 mm between the gas distribution device and the pedestal 200 is equivalent to the etching rate of each test point in the inner circle 105 corresponding to the distance of 14 mm between the gas distribution device and the pedestal 200. Therefore, the etching rate of the inner circle 105 can be equal to the etching rate of the outer circle 104 by changing the distance between the gas distribution device and the pedestal 200. In an alternative embodiment, the distance between the gas distribution device and the pedestal 200 corresponding to the outer circle 104 can be set to 17 mm, and the distance between the gas distribution device and the pedestal 200 corresponding to the inner circle 105 can be set to 14 mm, i.e., the difference between the first distance and the second distance is 3 mm, to achieve the uniformity of the etching rate of the semiconductor process etching region.

[0033] Referring to Figure 2 and Figure 5 , the etching rate corresponding to the inner circle 105 is greater than the etching rate corresponding to the outer circle 104. Exemplarily, the recessed region 101 is an annular region, and the convex region 102 is a circular region, and the convex region 102 is located in the recessed region 101. Exemplarily, the recessed region 101 can correspond to the outer circle 104, and the convex region 102 can correspond to the inner circle 105.

[0034] Of course, in the case that the etching rate corresponding to the inner circle 105 is slower than the etching rate corresponding to the outer circle 104, the convex region 102 can be an annular region, and the recessed region 101 can be a circular region, and the recessed region 101 is located in the convex region 102, so that the recessed region 101 corresponds to the inner circle 105, and the convex region 102 corresponds to the outer circle 104.

[0035] Referring to Figure 2The recessed area 101 and the protruding area 102 can be formed by changing the thickness of the gas distribution plate 100. For example, the thickness of the gas distribution plate 100 corresponding to the recessed area 101 can be 3mm less than the thickness of the gas distribution plate 100 corresponding to the protruding area 102. In an alternative embodiment, the recessed area 101 can be formed by slotting the side of the gas distribution plate 100 close to the susceptor 200. Of course, the protruding area 102 can also be formed by increasing the thickness of the gas distribution plate 100 on the side close to the susceptor 200. For example, a 3mm slot can be formed on the side of the gas distribution plate 100 close to the susceptor 200, so that the thickness of the gas distribution plate 100 in the area is reduced by 3mm, forming the recessed area 101. It should be noted that the recessed area 101 and the protruding area 102 are relative concepts. For example, the recessed area 101 is formed by slotting the side of the gas distribution plate 100 close to the susceptor 200, and the non-slotted area becomes the protruding area 102. Therefore, the specific method of forming the recessed area 101 and the protruding area 102 is not limited in the embodiments of the present application.

[0036] In an alternative embodiment, the side of the gas distribution plate 100 away from the susceptor 200 corresponding to the protruding area 102 and the recessed area 101 is planar, i.e. the side of the gas distribution plate 100 corresponding to the protruding area 102 and the side of the gas distribution plate 100 corresponding to the recessed area 101 are flush. Further, the thickness of the gas distribution plate 100 corresponding to the protruding area 102 can be 9mm, and the thickness of the gas distribution plate 100 corresponding to the recessed area 101 can be 3mm to 8mm. Specifically, the thickness of the gas distribution plate 100 corresponding to the protruding area 102 or the recessed area 101 can be adjusted according to actual needs, so that an electric field with uniform electric field strength is formed between the gas distribution plate 100 and the susceptor 200, and the uniformity of the density of the insulating film is improved.

[0037] In an alternative embodiment, the protruding area 102 is a circular area, and the radius of the protruding area 102 can be 120mm. The recessed area 101 is an annular area, and the inner radius of the recessed area 101 can be 120mm, and the outer radius of the recessed area 101 can be 165mm.

[0038] Referring to Figure 4The gas distribution plate 100 further comprises a transition region 103 located between the recessed region 101 and the convex region 102, and the distance between the transition region 103 and the base 200 gradually decreases from the side close to the recessed region 101 to the side close to the convex region 102. Exemplarily, the transition region 103 can be an inclined surface or an arc surface connecting the recessed region 101 and the convex region 102 in the gas distribution plate 100, so as to avoid the thickness mutation of the gas distribution plate 100 at the joint of the convex region 102 and the recessed region 101, and make the thickness transition of the gas distribution plate 100 at the joint of the convex region 102 and the recessed region 101 more gentle. In turn, in the semiconductor process, the electric field intensity of the convex region 102 and the electric field intensity of the recessed region 101 can be smoothly transitioned through the transition region 103, so as to improve the uniformity of the medium thin density.

[0039] In an alternative embodiment, the inner ring radius of the recessed region 101 is greater than or equal to 1 mm and less than or equal to 3 mm than the radius of the convex region 102, so as to form a ring-shaped transition region 103 with a width of 1 mm to 6 mm between the recessed region 101 and the convex region 102. The greater the ring width of the transition region 103, i.e. the greater the difference between the outer ring radius and the inner ring radius of the transition region 103, the more gentle the slope surface formed by the transition region 103 connects with the recessed region 101 or the convex region 102, and in turn, it is beneficial to the smooth transition of the electric field intensity of the convex region 102 and the electric field intensity of the recessed region 101. However, the greater the ring width of the transition region 103, the greater the area of the part of the inner ring 105 and / or the outer ring 104 opposite to the transition region 103, and in turn, it will affect the uniformity of the etching rate of the etching region in the semiconductor process. In a further alternative embodiment, the ring width of the transition region 103 can be determined according to the difference between the distance between the recessed region 101 and the base 200 and the distance between the convex region 102 and the base 200, so as to better ensure the uniformity of the etching rate of the etching region in the semiconductor process. Therefore, the embodiments of the present application do not limit the ring width of the transition region 103.

[0040] In an alternative embodiment, the part of the gas distribution plate 100 corresponding to the transition region 103 is provided with a circular chamfer towards the side of the base 200. Exemplarily, the transition region 103 is a chamfer region located between the recessed region 101 and the convex region 102. Alternatively, the radius of the circular chamfer is greater than or equal to 1 mm and less than or equal to 3 mm.

[0041] Reference is made to Figure 3, the convex region 102 and the concave region 101 form a stepped structure, and then the thickness of the gas distribution plate 100 at the joint of the convex region 102 and the concave region 101 changes suddenly, and a sharp end is formed in structure, which is easy to cause the electric field intensity between the gas distribution plate 100 and the pedestal 200 to change suddenly at the joint of the convex region 102 and the concave region 101. Referring to Figure 4 , by chamfering the edge of the convex region 102 at the joint of the convex region 102 and the concave region 101, the thickness of the gas distribution plate 100 at the joint of the convex region 102 and the concave region 101 changes more gently, and then in the semiconductor process, the electric field intensity of the convex region 102 and the concave region 101 can be smoothly transitioned through the transition region 103, so as to improve the uniformity of the medium thin density.

[0042] Referring to Figure 5 , the distribution density of the gas distribution holes 110 in the concave region 101 is a first hole density, and the distribution density of the gas distribution holes 110 in the convex region 102 is a second hole density, and the first hole density is greater than the second hole density. It should be noted that the distribution density of the gas distribution holes 110 in the embodiment of the application refers to the number of gas distribution holes 110 distributed per unit area. The first hole density is greater than the second hole density, that is, the number of gas distribution holes 110 distributed per unit area in the concave region 101 is greater than the number of gas distribution holes 110 distributed per unit area in the convex region 102. Since the distance between the concave region 101 and the pedestal 200 is greater than the distance between the convex region 102 and the pedestal 200, and then the volume of the reaction chamber 600 covered by the unit area of the concave region 101 is greater than the volume of the reaction chamber 600 covered by the unit area of the convex region 102. Exemplarily, the gas distribution holes 110 in the concave region 101 are uniformly distributed in the concave region 101, and the gas distribution holes 110 in the convex region 102 are uniformly distributed in the convex region 102.

[0043] In the above embodiment, by increasing the distribution density of the gas distribution holes 110 in the concave region 101, the process gas input by the concave region 101 is increased, and then the process gas in the part of the reaction chamber 600 covered by the concave region 101 is increased, so as to ensure the uniformity of the concentration of the process gas in the reaction chamber 600, and also avoid the decrease of the deposition rate caused by the decrease of the concentration of the process gas in the reaction chamber 600, so as to ensure the production capacity of the semiconductor process equipment.

[0044] Referring to Figure 1The gas distribution device further comprises a back plate 300, which is arranged on the side of the gas distribution plate 100 away from the susceptor 200, and a gas distribution cavity 400 is formed between the back plate 300 and the gas distribution plate 100. In this embodiment, the gas distribution cavity 400 is arranged to disperse the process gas in the gas distribution cavity 400, so as to avoid excessive local gas flow velocity, and to make the gas flow into the reaction cavity 600 through the gas distribution holes 110 more uniform.

[0045] Exemplarily, the side of the gas distribution plate 100 away from the susceptor 200 is provided with a groove 120, and the gas distribution holes 110 are arranged to pass through the gas distribution plate 100 to the bottom of the groove 120 from the side of the gas distribution plate 100 facing the susceptor 200. Optionally, the back plate 300 covers the opening of the groove 120, so as to form the gas distribution cavity 400 on the side of the back plate 300 and the gas distribution plate 100 away from the susceptor 200. Exemplarily, the back plate 300 and the gas distribution plate 100 are sealingly connected, so as to avoid leakage of the process gas from the connection between the back plate 300 and the gas distribution plate 100. Optionally, the back plate 300 and the gas distribution plate 100 can be sealed by a sealing ring.

[0046] Based on the gas distribution device disclosed in the embodiments of the present application, the embodiments of the present application further provide a semiconductor process equipment. The semiconductor process equipment comprises the gas distribution device according to any one of the above embodiments. For details, refer to Figure 1 The semiconductor process equipment further comprises a cavity 500 and a susceptor 200. The cavity 500 is a basic structural member, and can provide a mounting base for the susceptor 200 and the gas distribution device.

[0047] Exemplarily, the susceptor 200 is arranged in the cavity 500, and the susceptor 200 is used to place a semiconductor process product. The gas distribution device is fixed to the cavity 500, and is arranged opposite to the susceptor 200. Exemplarily, the semiconductor process product can be a wafer.

[0048] For details, refer to Figure 1 The gas distribution device is fixed to the cavity 500, and the gas distribution device, the cavity 500 and the susceptor 200 form a reaction cavity 600. Exemplarily, the gas distribution device further comprises a mounting portion 130, which is arranged around the outer periphery of the gas distribution plate 100, so that the gas distribution plate 100 can be connected to the cavity 500 through the mounting portion 130. Exemplarily, the mounting portion 130 is provided with a through hole, so that the mounting portion 130 can be fixed to the cavity 500 by a screw. Exemplarily, the mounting portion 130 can be an integral structure with the gas distribution plate 100.

[0049] In an alternative embodiment, the susceptor 200 comprises an electrode and an isolation layer, which is arranged on the side of the electrode close to the gas distribution device, so as to avoid the electrode from contaminating the metal in the reaction chamber 600 and improve the yield of the wafer.

[0050] Referring to Figure 1 , the semiconductor processing equipment further comprises a uniform flow grid 700 and a dry pump. The uniform flow grid 700 is arranged on both sides of the reaction chamber 600 and communicates with the reaction chamber 600. The uniform flow grid 700 is connected to the dry pump. The dry pump is an example. The uniform flow grid 700 can make the gas in the reaction chamber 600 uniformly flow from the reaction chamber 600 to the dry pump, thereby improving the uniformity of the pumping.

[0051] Referring to Figure 9 , in an alternative embodiment, the semiconductor processing equipment further comprises a gas pipeline, a precursor source bottle and a radio frequency power source RF. The gas pipeline comprises a plurality of flow meters, a plurality of pneumatic valves and a plurality of manual valves. The flow meters are MFC1-MFC3, the pneumatic valves are PV1-PV7, and the manual valves are MV1-MV5. Optionally, MV4 and MV5 are connected to the dry pump through the pipeline. The gas pipeline is connected to the gas distribution device, so that the gas pipeline can inject the process gas into the reaction chamber 600 through the gas distribution device. The radio frequency power source is used to ionize the gas in the reaction chamber 600 to form a plasma. Figure 9

[0052] Referring to Figure 9 and Figure 10 , the process of depositing a silicon dioxide film comprises the following steps:

[0053] Step S101, the wafer is transferred into the reaction chamber 600 so that the wafer is placed on the susceptor 200;

[0054] Step S102, the precursor is input into the reaction chamber 600 through the gas pipeline. The precursor can be bis(diethylamine)silane (SAM.24) as an example. Specifically, argon gas passes through MFC3, PV4, MV2, SAM.24 source bottle, MV3, PV5 and PV6, and enters the reaction chamber 600 through the gas distribution device. At the same time, argon gas (Ar) controlled by MFC2 and oxygen gas (O2) controlled by MFC1 also enter the reaction chamber 600. The bis(diethylamine)silane entering the reaction chamber 600 undergoes a chemical reaction and is adsorbed on the surface of the wafer.

[0055] ​Step S103, argon is introduced into the gas pipeline and the reaction cavity 600 to clean the precursors and by-products in the gas pipeline and the reaction cavity 600 which do not react. For example, during the process of cleaning the gas pipeline and the reaction cavity 600 by argon, PV4 and PV5 are closed, PV3 is opened, PV6 is closed, and PV7 is opened.

[0056] Step S104, the radio frequency power source RF is started to convert O2 into oxygen plasma, and the oxygen plasma reacts with the precursors adsorbed on the surface of the wafer to generate silicon dioxide, and then a silicon dioxide film is formed.

[0057] Step S105, the radio frequency power source RF is closed, and argon (Ar) is introduced into the gas pipeline and the reaction cavity 600 to clean the precursors and by-products in the gas pipeline and the reaction cavity 600 which do not react.

[0058] Step S106, the thickness of the generated silicon dioxide film is detected.

[0059] Step S107, if the thickness of the generated silicon dioxide film is less than a preset value, steps S102 to S106 are repeated.

[0060] Step S108, if the thickness of the generated silicon dioxide film reaches the preset value, the process is stopped.

[0061] The gas distribution device in the embodiment of the application can increase the volume of the reaction cavity 600 by arranging the recessed area 101 on the side of the gas distribution plate 100 close to the susceptor 200, and then the concentration of the precursor reaction source bisdiethylaminosilane (SAM.24) in the reaction cavity 600 is reduced. Without increasing the gas distribution holes 110, the amount of the input precursor reaction source bisdiethylaminosilane (SAM.24) is not enough to ensure the saturated adsorption on the surface of the wafer, so that the thickness of the deposited silicon dioxide film is thin, and the process cycle number is increased. The reduction of the concentration of the precursor reaction source bisdiethylaminosilane (SAM.24) can reduce the deposition rate, and then affect the productivity. In the embodiment of the application, the density of the gas distribution holes 110 in the recessed area 101 can increase the amount of the precursor in the area of the reaction cavity 600 opposite to the recessed area 101, which can not only ensure the uniformity of the deposition rate in the reaction cavity 600, but also is beneficial to the uniformity of the thickness of the silicon dioxide film.

[0062] The differences between the embodiments are mainly described in the above embodiments, and the optimization features of the different embodiments can be combined to form a better embodiment as long as they are not contradictory. Considering the brevity of the writing, the details are not described here.

[0063] The above merely illustrates the embodiments of the present application but should not be taken as limitations. Various changes and modifications can be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. within the spirit and principle of the present application should be included in the scope of claims of the present application.

Claims

1. A gas distribution device for semiconductor process equipment, the semiconductor process equipment comprising a cavity (500) and a base (200) disposed in the cavity (500), characterized in that, The gas distribution device includes a gas distribution plate (100), which is disposed in the cavity (500) and is disposed opposite to the base (200). The gas distribution plate (100) has a plurality of gas distribution holes (110) for inputting process gas into the cavity (500). The gas distribution plate (100) has a recessed area (101) and a protruding area (102) on the side facing the base (200). The distance between the recessed area (101) and the base (200) is a first distance, and the distance between the protruding area (102) and the base (200) is a second distance. The first distance is greater than the second distance. The portion of the gas distribution plate (100) opposite to the protruding area (102) and the recessed area (101) is a plane on the side away from the base (200), so that the thickness of the portion of the gas distribution plate (100) corresponding to the protruding area (102) is greater than the thickness of the portion of the gas distribution plate (100) corresponding to the recessed area (101).

2. The gas distribution device according to claim 1, characterized in that, The gas distribution plate (100) further includes a transition region (103) located between the recessed region (101) and the protruding region (102), and the distance of the transition region (103) from the base (200) gradually decreases from the side closer to the recessed region (101) to the side closer to the protruding region (102).

3. The gas distribution device according to claim 2, characterized in that, The gas distribution plate (100) corresponding to the transition region (103) has a rounded chamfer on the side facing the base (200), and the radius of the rounded chamfer is greater than or equal to 1 mm and less than or equal to 3 mm.

4. The gas distribution device according to any one of claims 1 to 3, characterized in that, The distribution density of the gas distribution holes (110) in the recessed region (101) is the first pore density, and the distribution density of the gas distribution holes (110) in the protruding region (102) is the second pore density. The first pore density is greater than the second pore density.

5. The gas distribution device according to claim 1, characterized in that, The recessed area (101) is an annular area, and the protruding area (102) is a circular area. The recessed area (101) and the protruding area (102) are distributed radially inward along the gas distribution plate (100); or, The protruding area (102) is an annular area, and the recessed area (101) is a circular area. The recessed area (101) and the protruding area (102) are distributed outward along the radial direction of the gas distribution plate (100).

6. The gas distribution device according to claim 1, characterized in that, The gas distribution device further includes a back plate (300), which is disposed on the side of the gas distribution plate (100) away from the base (200), and a gas distribution cavity (400) is formed between the back plate (300) and the gas distribution plate (100).

7. The gas distribution device according to claim 6, characterized in that, The gas distribution plate (100) has a groove (120) on the side away from the base (200), and the plurality of gas distribution holes (110) pass through the gas distribution plate (100) from the side of the gas distribution plate (100) facing the base (200) to the bottom of the groove (120).

8. The gas distribution device according to any one of claims 1 to 3, characterized in that, The difference between the first spacing and the second spacing is greater than 1 mm and less than or equal to 6 mm.

9. A semiconductor process apparatus, characterized in that, The device includes a cavity (500), a base (200), and a gas distribution device according to any one of claims 1 to 7, wherein the base (200) is used to place a wafer; the gas distribution device is fixed to the cavity (500) and is disposed opposite to the base (200).

10. The semiconductor process equipment according to claim 9, characterized in that, The semiconductor process equipment further includes a flow equalization grid (700) and a vacuum pump. The gas distribution device, the cavity (500), and the base (200) enclose a reaction chamber (600). The flow equalization grid (700) is located on both sides of the reaction chamber (600) and is connected to the reaction chamber (600). The flow equalization grid (700) is also connected to the vacuum pump.

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