Baking unit and apparatus for processing a substrate

Abstract

The inventive concept provides a baking unit and an apparatus for processing a substrate. The baking unit comprises a housing having an upper cover and a lower frame which in combination provide a processing space for heat treatment of a substrate, a heater arranged in the processing space for heating a substrate placed thereon, a heater cup configured to surround the heater, and a first purge gas supply unit for providing a first purge gas flow to prevent external air from flowing in through a gap between the lower frame and the heater cup.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0116381, filed with the Korean Intellectual Property Office on September 10, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to an apparatus for processing a substrate, and more particularly to an apparatus for heat treatment of a substrate. Background Technology

[0004] To manufacture semiconductor devices, various processes such as photolithography, etching, deposition, ion implantation, and cleaning are performed. Among these processes, photolithography forms patterns and plays a crucial role in achieving high integration of semiconductor devices.

[0005] Photolithography mainly consists of application, exposure, and development processes, with baking processes performed before and after exposure. The baking process is a heating process for the substrate: when the substrate is placed on a heating plate, it is heat-treated by heaters located inside the heating plate.

[0006] In the baking process, the uniform temperature of the airflow above the substrate is crucial. The airflow temperature above the substrate is one of the key factors determining the process throughput.

[0007] In the existing baking unit, due to structural issues, the airflow in the upper interior space of the chamber may be unevenly supplied.

[0008] Increasing the process gas supply rate to improve the etching rate results in uneven airflow in the upper interior space of the chamber, exacerbating thickness uniformity issues. Conversely, reducing the process gas supply rate to address thickness uniformity issues increases the inflow rate of external air through the gap at the bottom of the chamber, thus decreasing the etching rate. Summary of the Invention

[0009] An embodiment of the present invention provides a baking unit and a substrate processing apparatus that can improve the uniformity of temperature and airflow above the substrate.

[0010] An embodiment of the present invention also provides a baking unit and a substrate processing apparatus, which are characterized by providing purge gas from below the bottom side of a heater.

[0011] An embodiment of the present invention provides a baking unit and a substrate processing apparatus that can prevent the inflow of external air above the substrate.

[0012] An embodiment of the present invention provides a baking unit and a substrate processing apparatus that can stably maintain the temperature above the substrate.

[0013] The technical objectives of this invention are not limited to those described above, and other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0014] In one aspect of an embodiment of the present invention, a baking unit includes: a housing having an upper cover and a lower frame, the upper cover and the lower frame combined to provide space for heat treatment of a substrate; a heater disposed in the heat treatment space for heating a substrate placed on the heater; a heater cup disposed around the heater; and a first purge gas supply unit for supplying a first purge gas flow to prevent the inflow of external air through the gap between the lower frame and the heater cup.

[0015] In some embodiments, the first purge gas supply unit may include a gas inlet space in the side wall of the lower frame for the inflow of the first purge gas; and an outlet configured to allow the first purge gas flowing into the inlet space to be discharged into the gap between the heater cup and the lower frame.

[0016] In some implementations, the outlet can be positioned facing the side of the heater cup.

[0017] In some embodiments, the baking unit may further include a thermally insulating cup and a second purge gas supply unit spaced apart from the lower surface of the heater cup, wherein the second purge gas supply unit provides a second purge gas flow that prevents the inflow of external air through a plurality of through-holes formed at the bottom sides of the thermally insulating cup and the heater cup.

[0018] In some embodiments, the baking unit may also include a support member that supports the heater through a plurality of through holes.

[0019] In some embodiments, the thermally insulating cup has an internal space, and the second purge gas supply unit can supply a second purge gas into the internal space of the thermally insulating cup.

[0020] In some embodiments, the baking unit may further include a baffle unit for injecting process gases onto a substrate placed on a heater. The baffle unit includes: an upper plate having a plurality of first injection holes; and a lower plate having a plurality of second injection holes, the lower plate being disposed below the upper plate.

[0021] In some implementations, the size of the first injection orifice may be relatively small and / or the number may be relatively small compared to the second injection orifice.

[0022] In some embodiments, the baffle unit may further include a central exhaust part that forms an exhaust flow in the central region of the processing space; and a peripheral exhaust part that forms an exhaust flow in the peripheral region of the processing space.

[0023] In some implementations, the first purge gas and the second purge gas can be inert gases with a constant temperature.

[0024] In another embodiment of the present invention, a substrate processing apparatus includes: a chamber having an internal space; a baking unit disposed within the chamber and providing a heat treatment space for a substrate baking process; and a cooling unit for cooling a substrate, the cooling unit being disposed on one side of the baking unit, wherein the baking unit includes: a housing having an upper cover and a lower frame, the upper cover and the lower frame combined to provide a space for heat treatment of the substrate; a heater disposed in the heat treatment space for heating a substrate placed on the heater; a heater cup configured to surround the heater; and a first purge gas supply unit for supplying a first purge gas flow to prevent the inflow of external air entering through the gap between the lower frame and the heater cup.

[0025] In some embodiments, the first purge gas supply unit may include a gas inlet space in the side wall of the lower frame for the first purge gas to flow into the gas inlet space; and an outlet configured to allow the first purge gas flowing into the inlet space to be discharged into the gap between the heater cup and the lower frame.

[0026] In some embodiments, the baking unit further includes a thermally insulating cup spaced apart from the lower surface of a heater cup; a support member for supporting the heater through a plurality of through-holes formed at the bottom sides of the heater cup and the thermally insulating cup; and a second purge gas supply unit for supplying a second purge gas flow to prevent the inflow of external air through the plurality of through-holes.

[0027] In some embodiments, the thermally insulating cup may have an internal space, and the second purge gas supply unit supplies a second purge gas into the internal space of the thermally insulating cup.

[0028] In some embodiments, the baking unit further includes a baffle unit for injecting process gases onto a substrate placed on a heater, wherein the baffle unit includes: an upper plate having a plurality of first injection holes; and a lower plate having a plurality of second injection holes, the lower plate being disposed below the upper plate.

[0029] In some implementations, the size of the first injection orifice may be relatively small and / or the number may be relatively small compared to the second injection orifice.

[0030] In another aspect of the embodiments of the present invention, a baking unit includes: a housing having an upper cover and a lower frame, the upper cover and the lower frame combined to provide a processing space for heat treatment of a substrate; a heater disposed within the processing space for heating a substrate placed on a heating plate; a heater cup configured to surround the heater; a thermally insulating cup spaced apart from the lower surface of the heater cup; a support member for supporting the heater through a plurality of through holes formed at the bottom sides of the heater cup and the thermally insulating cup; a first purge gas supply unit for providing a first purge gas flow to prevent the inflow of external air entering through the gap between the lower frame and the heater cup; a second purge gas supply unit for providing a second purge gas flow to block external air entering through the plurality of through holes; and a baffle unit for spraying process gas onto the substrate placed on the heater.

[0031] In some embodiments, the first purge gas supply unit may include a gas input space in the side wall of the lower frame for the first purge gas to flow into the gas input space; and an outlet configured to allow the first gas flowing into the input space to be discharged into the gap between the heater cup and the lower frame, the outlet facing the side of the heater cup.

[0032] In some implementations, the second purge gas supply unit can supply the second purge gas into the internal space of the thermally insulating cup.

[0033] In some embodiments, the baffle unit includes: an upper plate having a plurality of first injection holes; and a lower plate having a plurality of second injection holes disposed below the upper plate, wherein the first injection holes are relatively smaller in size and / or fewer in number compared to the second injection holes.

[0034] According to some implementation schemes, the purge gas supplied by the first purge gas supply unit and the second purge gas supply unit advantageously improves the uniformity of temperature and airflow above the substrate.

[0035] According to some implementation schemes, the inflow of external air that enters through the gaps in the lower frame can be prevented.

[0036] According to some implementation schemes, the temperature of the upper part of the substrate can be kept constant.

[0037] According to some implementation schemes, the etching rate can be improved by adjusting the volume of purge gas supplied through the first purge gas supply unit and the second purge gas supply unit. Attached Figure Description

[0038] Referring to the following figures, the above and other objects and features will become apparent from the following description, wherein, unless otherwise stated, the same reference numerals refer to the same parts throughout the figures, and in the figures:

[0039] Figure 1 This schematically illustrates a substrate processing apparatus according to an embodiment of the present invention.

[0040] Figure 2 From Figure 1 A view of the middle substrate processing device (1) viewed from the AA direction;

[0041] Figure 3 From Figure 1 A view of the BB of the substrate processing apparatus (1);

[0042] Figure 4 This is a top plan view of the heat treatment chamber;

[0043] Figure 5 This is a side cross-sectional view of the heat treatment chamber;

[0044] Figure 6 yes Figure 5 The baking unit of the heat treatment chamber;

[0045] Figure 7This is an enlarged view showing the main parts of the first purge gas supply unit;

[0046] Figure 8 This is an enlarged view showing the main parts of the second purge gas supply unit;

[0047] Figure 9 The baffle unit is shown schematically. Detailed Implementation

[0048] Hereinafter, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings. The inventive concept is not limited to the embodiments disclosed below, but can be implemented in various forms. Embodiments of the inventive concept are provided to make the disclosure of the inventive concept complete and sufficient to inform those skilled in the art of the scope of the inventive concept.

[0049] The apparatus of the embodiments of the present invention can be used to perform photolithography processes on substrates (such as semiconductor wafers or flat panel displays). In particular, the apparatus of the embodiments of the present invention can be connected to an exposure apparatus to perform application and development processes on the substrate. As an example only, embodiments of the present invention will be described below in the case of semiconductor wafer substrates.

[0050] Figure 1 and Figure 3 A substrate processing apparatus (1) according to an embodiment of the present invention is shown schematically. Figure 1 This is a view taken from the top of the substrate processing apparatus (1). Figure 2 From Figure 1 A view of the substrate processing apparatus (1) in the AA direction, and Figure 3 From Figure 1 A view of the substrate processing apparatus (1) in the BB direction.

[0051] Reference Figures 1 to 3 The substrate processing apparatus (1) includes a loading port 100, an indexing module 200, a buffer module 300, an application and development module 400, an interface module 700, and a purge module 800. The loading port 100, the indexing module 200, the buffer module 300, the application and development module 400, and the interface module 700 are arranged in a row in sequence. The purge module 800 may be disposed inside the interface module 700. The purge module 800 may be disposed in various locations, such as behind the exposure equipment connected to the interface module 700 or on the side of the interface module 700.

[0052] In the following text, the orientation in which the loading port 100, index module 200, buffer module 300, application and development module 400, and interface module 700 are arranged will be referred to as the first orientation 12. When viewed from above, the orientation perpendicular to the first orientation 12 will be referred to as the second orientation 14, and the orientation perpendicular to both the first orientation 12 and the second orientation 14 will be referred to as the third orientation 16.

[0053] The substrate W stored in cassette 20 is transferred. Cassette 20 has a structure that can be sealed to the outside. For example, a front-open unified pod (FOUP) with a fully open door can be used as cassette 20.

[0054] The following sections will explain the loading port 100, index module 200, buffer module 300, application and development module 400, interface module 700, and purge module 800.

[0055] The loading port 100 has a placement stage 120 on which the housing 20 of the storage substrate W is placed. Multiple placement stages 120 are provided, and the placement stages 120 are arranged along a second direction 14. Figure 1 In the embodiment shown, four placement platforms 120 are provided.

[0056] Indexing module 200 transfers substrate W between a box 20 placed on a placement stage 120 at loading port 100 and buffer module 300. Indexing module 200 includes a frame 210, an indexing robot 220, and a guide rail 230. Frame 210 is typically configured as an empty cuboid. Frame 210 is arranged between loading port 100 and buffer module 300. Frame 210 of indexing module 200 may be positioned at a lower height than frame 310 of buffer module 300, which will be further explained below. Indexing robot 220 and guide rail 230 are disposed within frame 210. Indexing robot 220 has a hand 221 and a multi-axis drive structure that directly handles substrate W. The multi-axis drive structure may be movable and rotatable in a first direction 12, a second direction 14, and a third direction 16. Indexing robot 220 includes a hand 221, an arm 222, a support 223, and a base 224. Hand 221 is fixedly mounted to arm 222. Arm 222 is configured to be extendable, retractable, and rotatable. Support 223 is arranged such that its length extends along a third direction 16. Arm 222 is connected to support 223 and is movable on support 223. Support 223 is fixedly connected to base 224. Guide rail 230 is arranged such that its length extends along a second direction 14. Base 224 is connected to guide rail 230 and is linearly movable on guide rail 230. Similarly, although not shown, a door opener for opening and closing the door of box 20 is provided in frame 210.

[0057] The buffer module 300 includes a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is configured as an empty cuboid and is arranged between the indexing module 200 and the application and developing module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are disposed within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are arranged sequentially from the bottom along a third direction 16. The first buffer 320 is located at the same position as the application module 401 of the application and developing module 400, as will be described below. The second buffer 330 and the cooling chamber 350 are located at the same position as the developing module 402 of the application and developing module 400, as will be described below. The first buffer robot 360 is positioned along a second direction 14 at a distance from the second buffer 330, the cooling chamber 350, and the first buffer 320.

[0058] First buffer 320 and second buffer 330 temporarily store multiple substrates W. Second buffer 330 has a housing 331 and multiple supports 332. Supports 332 are arranged within housing 331 and spaced apart from each other in a third direction 16. A single substrate W is placed on each support 332. Housing 331 has openings (not shown) facing indexing robot 220 and first buffer robot 360, allowing indexing robot 220 and first buffer robot 360 to bring substrates W into / out of the supports 332 within housing 331. First buffer 320 generally has a similar structure to second buffer 330, i.e., housing 321 of first buffer 320 has openings facing first buffer robot 360 and application robot 432, which is disposed in an application module for transferring wafers W therebetween. The number of supports 322 provided in first buffer 320 may be the same as the number of supports 332 provided in second buffer 330. In one embodiment, the number of support members 332 provided in the second buffer 330 may be greater than the number of support members 322 provided in the first buffer 320.

[0059] A first buffer zone robot 360 transfers a substrate W between a first buffer zone 320 and a second buffer zone 330. The first buffer zone robot 360 includes a hand 361, an arm 362, and a support 363. The hand 361 is fixedly mounted to the arm 362. The arm 362 can be configured as an extendable and retractable structure, allowing the hand to move in a second direction 14. The arm 362 is movably connected to the support 363, and the arm moves linearly along a third direction on the support 363. The support 363 has a length extending between a point corresponding to the position of the second buffer zone 330 and a point corresponding to the position of the first buffer zone. The support 363 can further extend upwards or downwards. The first buffer zone robot 360 can be configured as a dual-axis drive structure, allowing the hand 361 to move in both the second direction 14 and the third direction 16.

[0060] Cooling chamber 350 cools each substrate W. Cooling chamber 350 includes a housing 351 and a cooling plate 352. Cooling plate 352 includes a top surface and a cooling member 353, on which a substrate is placed. The cooling member is used to cool the substrate W. Cooling member 353 can utilize various cooling methods, such as cooling water or thermoelectric equipment. Cooling chamber 350 may further be provided with a lifting pin assembly that places the substrate W on cooling plate 352. Housing 351 may have an opening facing indexing robot 220, and the robot, located in the developing module, can bring the substrate W onto or remove it from cooling plate 352. Furthermore, cooling chamber 350 is provided with a door for opening and closing the aforementioned opening.

[0061] Before and after the photoresist application process, the application module 401 performs processes such as applying a photosensitive solution (e.g., photoresist solution) to the substrate W and thermal processing processes (e.g., heating and cooling the substrate W). The application module 401 has a chemical process chamber 410, a thermal processing chamber 500, and a transfer chamber 430. The chemical process chamber 410, the thermal processing chamber 500, and the transfer chamber 430 are arranged sequentially in the second direction 14. The chemical process chamber 410 can be configured as a photoresist application chamber 410, which applies a photoresist solution to the substrate W. A plurality of photoresist application chambers 410 are provided, and the plurality of photoresist application chambers 410 are respectively disposed in the first direction 12 and the third direction 16. The thermal processing chamber 500 is provided with a plurality of photoresist application chambers respectively in the first direction 12 and the third direction 16.

[0062] The transfer chamber 430 is arranged side-by-side with the first buffer zone 320 of the buffer module 300 in the first direction 12. An application robot 432 and a guide rail 433 are disposed within the transfer chamber 430. The transfer chamber 430 generally has a rectangular shape. The application robot 432 transfers the substrate W between the heat treatment chamber 500, the photoresist application chamber 410, and the first buffer zone 320 of the buffer module 300. The guide rail 433 is arranged such that its length extends in the first direction 12. The guide rail 433 guides the application robot 432 to move linearly (i.e., back and forth) in the first buffer direction. The application robot 432 has a hand 434, an arm 435, a support 436, and a base 437. The hand 434 is fixedly mounted to the arm 435. The arm 435 is configured to be extendable and retractable, allowing the hand 434 to move horizontally. The support 436 is arranged such that its length extends in the third direction 16. The arm is connected to the support 436 so that it can move linearly along a third direction 16 on the support 436. The support 436 is fixedly mounted to the base 437, and the base 437 is connected to the guide rail 433 so that it is movable along the guide rail 433.

[0063] The photoresist application chambers 410 have the same structure. However, the photoresist used in each photoresist application chamber 410 may be different. In one embodiment, a chemically amplified resist can be used as the photoresist. The photoresist application chamber 410 applies photoresist to the surface of the substrate W. The photoresist application chamber 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has a cup shape with an open upper side. The support plate 412 is disposed inside the housing 411 and supports the substrate W. The support plate 412 is configured to be rotatable. The nozzle 413 provides photoresist to the surface of the substrate W disposed on the support plate 412. The nozzle 413 may have a cylindrical shape and may provide photoresist to the center of the substrate W. Alternatively, the nozzle 413 may have a length corresponding to the diameter of the substrate W, and the outlet of the nozzle 413 may be disposed in a slit. In addition, another nozzle can be provided in the photoresist application chamber 410 to supply a cleaning solution (such as deionized water) to clean the surface of the substrate W that has been treated with photoresist.

[0064] Reference Figure 1 or Figure 3 The developing module 402 performs a developing process and a heat treatment process. The developing process supplies a developing solution to remove part of the photoresist to obtain a pattern on the surface of the substrate W, and the heat treatment process includes heating or cooling the substrate W before and after the developing process. The developing module 402 has a liquid (chemical) process chamber 460, a heat treatment chamber 500, and a transfer chamber 480. The liquid process chamber 460, the heat treatment chamber 500, and the transfer chamber 480 are arranged sequentially in a second direction 14. The liquid process chamber 460 can be configured as a developing chamber. The developing chamber 460 and the heat treatment chamber 500 are arranged in the second direction 14, and the transfer chamber 480 is located between the developing chamber and the heat treatment chamber. A plurality of developing chambers 460 are respectively arranged in the first direction 12 and the third direction 16.

[0065] The transfer chamber 480 is placed side-by-side with the second buffer zone 330 of the buffer module 300 in the first direction 12. Inside the transfer chamber 480 are a developing robot 482 and a guide rail 483. The transfer chamber is generally rectangular in shape. The developing robot 482 moves the substrate W between the heat treatment chamber 500, the developing chamber 460, the second buffer zone 330 of the buffer module 300, and the cooling chamber 350. The guide rail 483 extends along the first direction 12. The guide rail guides the developing robot to move linearly in the first direction 12. The developing robot 482 has a hand 484, an arm 485, a support member 468, and a base 487. The hand 484 is fixedly mounted to the arm 485. The arm 485 is extendable and retractable, thus allowing the hand 484 to move horizontally. The support member 486 extends along a third direction 16. The arm 485 is connected to the support member 486 to move linearly in the third direction 16. The support member 486 is fixedly mounted to the base 487. The base 487 is engaged with the guide rail 483, allowing the base to move along the guide rail 483.

[0066] All developing chambers 460 have the same structure. However, the developing liquid used in each developing chamber 460 can be different from each other. The developing chamber 460 can remove the light-exposed portion of the photoresist applied to the surface of the substrate W. At the same time, it can also remove the light-exposed portion of the protective layer. Depending on the type of photoresist, portions of the photoresist that have not been exposed to light and portions of the protective layer can be removed.

[0067] The developing chamber 460 includes a housing 461, a support plate 462, and a nozzle 463. The housing 461 has a cup-shaped form with an open upper side. The support plate 462 is disposed within the housing 461 and supports the substrate W. The support plate is rotatably disposed. The nozzle 463 supplies developing liquid to the substrate W. The nozzle 463 has a cylindrical shape and can supply developing liquid to the center of the substrate W. Alternatively, the nozzle can have a length matching the diameter of the substrate W, and the outlet of the nozzle 463 can be a slit. Furthermore, a nozzle supplying cleaning liquid 464 (such as deionized water) can be additionally disposed in the developing chamber 460 to clean the surface of the substrate W.

[0068] The heat treatment chamber located in the developing module 402 is typically arranged in the same manner as the heat treatment chamber 500 mentioned earlier.

[0069] As described above, an application module 401 and a developing module 402 are provided such that they can be separated from each other in the application and developing modules 400. Furthermore, when viewed from above, the application module 401 and the developing module 402 can have the same chamber arrangement.

[0070] Interface module 700 is a transmission substrate W. Interface module 700 includes a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are disposed within the frame 710. The first buffer 720 and the second buffer 730 are stacked with a gap between them. The first buffer 720 is stacked on top of the second buffer 730.

[0071] The interface robot 740 is spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 transfers the substrate W between the first buffer 720, the second buffer 730 and the exposure device 900.

[0072] The first buffer temporarily stores the processed substrates W before they are moved to the exposure apparatus 900. The second buffer 730 temporarily stores the substrates W that have already been processed in the exposure apparatus before moving them to other apparatuses for further processing. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and spaced apart from each other in a third-order direction. A substrate W is placed on each support 722. The housing 721 has openings facing the interface robot 740 and the pre-processing robot 632, allowing the interface robot 740 and the pre-processing robot to bring the substrate W into or out of the housing 721 through the openings, and subsequently bring the substrate W to or out of the supports 722. The second buffer 730 has a structure similar to that of the first buffer 720 for transferring the substrate W. Only buffers and robots as described above can be provided in the interface module; no chambers are provided for performing any processing on the wafer.

[0073] Figure 4 It shows a top plan view of the heat treatment chamber, and Figure 5 It shows Figure 4 A side cross-sectional view of the heat treatment chamber.

[0074] Reference Figure 4 and Figure 5 The heat treatment chamber 500 may include a housing 510, a cooling unit 530, and a baking unit 1000.

[0075] The housing 510 has an internal space. The housing 510 is rectangular in shape. The housing 510 includes a first sidewall 511, a second sidewall 513, and an inlet 512. Inside the housing 510, the cooling unit 530 and the baking unit 1000 are arranged side by side.

[0076] A first sidewall 511 is disposed on one side of the housing 510. A second sidewall 513 is disposed in the housing 510 on the side opposite to the first sidewall 511. The first sidewall 511 of the housing 510 has an inlet 512 through which the substrate W enters or exits the housing 510. The inlet 512 is provided with a channel for the substrate W.

[0077] Cooling unit 530 cools the substrate W that has been processed in baking unit 1000. Cooling unit 530 includes a cooling plate 531 and a transfer unit 540 for moving the cooling plate 531. In an embodiment, a cooling flow path may be provided inside the cooling plate 531. Cooling water may be supplied to the cooling flow path, causing the cooling flow path to cool the substrate W and the cooling plate 531. Transfer unit 540 transfers the cooling plate 531 within housing 510. The cooling plate 531 can be moved by transfer unit 540 to a standby position and a cooling position. The standby position may be a position near the inlet (e.g., Figure 4 As shown in the figure, the cooling position can correspond to the position above the heating plate.

[0078] The substrate W is placed on the cooling plate 531. The cooling plate 531 is circular in shape. The cooling plate 531 may be the same size as the substrate W. The cooling plate 531 may be made of a metal material with good thermal conductivity. The cooling plate 531 is provided with a guide hole 535. The guide hole 535 extends inward from the outer side (edge) of the cooling plate. When the cooling plate 531 moves, the guide hole 535 prevents the cooling plate 531 from interfering with or colliding with the lifting pin 553. The cooling plate may be provided with a flow path through which the cooling refrigerant flows.

[0079] The arm 532 is fixedly connected to the cooling plate 531. The arm 532 is disposed between the cooling plate 531 and the transmission unit 540.

[0080] The transmission unit 540 drives the cooling plate 531. The transmission unit 540 moves the cooling plate 531 horizontally or vertically. The transmission unit 540 can move the cooling plate 531 to a first position or a second position. The first position is where the cooling plate 531 is close to the first sidewall 511. The second position is close to the second sidewall 513 and close to the upper surface of the heating plate.

[0081] Figure 6 The baking unit is shown.

[0082] The baking unit 1000 performs heat treatment on the substrate W. The baking unit 1000 performs heat treatment on the substrate W before and after applying the photoresist solution. The baking unit 1000 can heat the substrate W to a certain temperature before applying the photoresist solution in order to change the surface properties of the substrate W and form a processing solution (e.g., adhesive) layer on the surface of the substrate W.

[0083] Reference Figures 4 to 6 The baking unit 1000 heats the substrate W to a preset temperature. The baking unit 1000 includes a housing 1100, a heater 1200, a heater cup 1300, a thermal insulation cup 1400, a first purge gas supply unit 1500, a second purge gas supply unit 1600, a baffle unit 1700, a lifting pin 1800, and a driver 1900.

[0084] The housing 1100 may provide a processing space therein for heat treatment of the substrate W. The housing 1100 includes an upper cover 1120, a lower frame 1140, and a top plate member 1160.

[0085] The upper cover 1120 has a lower opening. For example, the upper cover 1120 may be a cylindrical shape with an open lower side. The upper cover 1120 is positioned above the heater 1200. Before transferring the substrate W onto the heating plate 1220, the upper cover 1120 is moved upward from the lower frame 1140 by the driver 1900. In order to heat the substrate W by the heating plate 1220, the upper cover 1120 is moved downward by the driver 1900 to engage with the lower frame 1140 to form a processing space in which the substrate W is heated.

[0086] The actuator 1900 is fixedly connected to the upper cover 1120 via a support member 1920. When transferring the substrate W to or from the heating plate 1220, the actuator 1900 moves the upper cover 1120 up and down. In one embodiment, the actuator 1900 may be cylindrical.

[0087] The lower frame 1140 is configured with a frame shape that is open at the top. For example, the lower frame 1140 may be a cylindrical shape with an open top. The lower frame 1140 is located below the upper cover 1120. The upper cover 1120 and the lower frame 1140 are placed facing each other in a top-to-bottom direction. The upper cover 1120 and the lower frame 1140 are combined to form a processing space 1110 above the heater. The lower frame may be configured to have its lower portion open.

[0088] The top plate component 1160 seals the gap between the upper cover 1120 and the lower frame 1140. The top plate component 1160 is positioned between the lower end of the upper cover 1120 and the upper end of the lower frame 1140. The top plate component 1160 may be an O-ring component with a circular ring shape. The top plate component 1160 may be fixedly assembled with the lower end of the upper cover 1120.

[0089] The heater 1200 is disposed inside the lower frame 1140. The heater 1200 may include a heating plate 1220 and a support plate 1240 supporting the heating plate 1220. Devices for heating the substrate W are disposed in the heating plate 1220. For example, a heating coil may be disposed within the heating plate 1220 as a heating device. Alternatively, the heating device may be disposed within the heating plate. The heater 1200 is cylindrical in shape. The heater 1200 has a pin hole (H1) for receiving the lifting pin 1800.

[0090] The pin hole (H1) provides a channel for the vertical movement of the lifting pin 1800, thereby raising and lowering the substrate W. The pin hole (H1) is configured to vertically penetrate the heating plate 1220 and the support plate 1240, and multiple pin holes (H1) can be provided.

[0091] The lifting pin 1800 moves vertically by a pin drive unit. The lifting pin 1800 can mount the substrate W onto the heating plate 1220. The lifting pin 1800 can move the substrate W vertically to a position a certain distance away from the heating plate 1220.

[0092] The heater cup 1300 can be positioned around the heater 1200. The heater cup 1300 can be installed spaced apart from the heater 1200. The thermally insulating cup 1400 is installed at a distance from the bottom surface of the heater cup 1300. The heater cup 1300 and the thermally insulating cup 1400 have a number of through holes and openings through which external gas can enter.

[0093] In one embodiment, the support member 1020 may be mounted to support the heater 1200 through through holes (H2) on the bottom side of the heater cup 1300 and the bottom side of the insulating cup 1400. Although not shown, power and signal cables may be connected to the heater 1200 through the support member 1020 or the opening.

[0094] Figure 7 This is an enlarged view showing the main parts of the first purging gas supply unit.

[0095] Reference Figure 7 The first purge gas supply unit 1500 provides the flow of the first purge gas (L1; in Figure 7 (Indicated by arrows) to prevent outside air from flowing in through the gap between the lower frame 1140 and the heater cup 1300.

[0096] The first purge gas supply unit 1500 may include a gas inlet space 1520, an outlet 1540, and a supply line 1560. The gas inlet space 1520 is located at the upper end of the side wall (flange: 1142) of the lower frame 1140 and is used for the inflow of first purge gas. The outlet 1540 discharges the first purge gas flowing into the gas inlet space 1520 into the gap between the heater cup 1300 and the lower frame 1140. The supply line 1560 supplies purge gas to the gas inlet space. The gas inlet space 1520 is annular along the flange of the lower frame 1140, and the outlet 1540 may be formed at certain intervals along the flange of the lower frame 1140. The outlet 1540 may be configured to face the side of the heater cup 1300.

[0097] Figure 8 This is an enlarged view showing the main parts of the second purging gas supply unit.

[0098] Reference Figure 8 The second purge gas supply unit 1600 provides a flow of second purge gas (L2; in Figure 8 (Indicated by arrows) to prevent external air from flowing in through the through-holes (H1) and openings formed in the lower frame 1140, the thermally insulating cup 1400, and the heater cup 1300. The second purge gas supply unit 1600 may include a supply port 1620 and a supply line 1640 connected to the supply port 1620, which supplies the second purge gas into the internal space of the thermally insulating cup 1400. In this way, the etching rate can be improved by supplying purge gas to the thermally insulating cup 1400 and treating the external gas flow that may directly affect the substrate with a non-oxidizing gas (purge gas).

[0099] According to an embodiment of the invention, the baking unit 1000 can prevent the inflow of external air by supplying purge gas from the first purge gas supply unit 1500 and the second purge gas supply unit 1600, thus maintaining the uniformity of environmental conditions in the processing space. The purge gas can be an inert gas with a constant temperature.

[0100] The baking unit of the embodiment of the present invention cannot increase the supply volume indefinitely according to the volume of the process gas (upper unit volume) and the relationship between THK uniformity and etching rate. Instead, by supplying purge gas via the first purge gas supply unit 1500 and the second purge gas supply unit 1600, a sufficient volume of purge gas can be supplied to the substrate.

[0101] The amount of purge gas supplied through the first purge gas supply unit and the second purge gas supply unit can be controlled, and the substrate etching rate can be adjusted by controlling the amount of purge gas supplied.

[0102] Figure 9 The baffle unit is shown.

[0103] according to Figure 9 The baffle unit 1700 injects process gas onto a substrate placed on the heater 1200. The baffle unit 1700 may include an upper baffle 1720 and a lower baffle 1740. The upper baffle 1720 has a plurality of first injection holes 1722, and the lower baffle 1740 has a plurality of second injection holes 1742. Preferably, the size and / or number of the first injection holes 1722 may be relatively smaller than the number of the second injection holes 1742. The process gas may be the same gas as the purge gas supplied through the first and second purge gas supply units.

[0104] Therefore, the baffle unit 1700 can increase the time required for the process gas to pass through the upper baffle 1720, so that the process gas can fully absorb the heat provided by the heater.

[0105] Process gas can be supplied to the substrate after passing through the supply port 1702 formed on the upper side of the upper cover 1120, and continuously through the first injection hole 1722 in the upper baffle and subsequently the second injection hole 1742 in the lower baffle. After being supplied in this manner, the process gas can be discharged together with the flue gas generated from the substrate through the emission unit.

[0106] The discharge unit of the baffle unit 1700 may include a central discharge unit 1760 and a peripheral discharge unit 1780. The central discharge unit 1760 forms a discharge flow in the central region of the processing space, and the peripheral discharge unit forms a discharge flow in the outer periphery of the processing space.

[0107] A central discharge unit 1760 may be disposed in the central region of the baffle unit 1700, opposite to the central region of the processing space. The central discharge unit 1760 is connected to the discharge pipe 1790 of the upper cover 1120. An outer peripheral discharge unit 1780 may be disposed on the outer periphery of the baffle unit 1700, opposite to the outer periphery of the processing space. The outer peripheral baffle unit 1780 is connected to the discharge pipe of the upper cover 1790.

[0108] As described in detail above, the baking unit 1000 according to the embodiment of the present invention employs multiple plates, each plate having multiple holes, thereby increasing the uniformity of gas flow on the substrate and thus increasing the production capacity compared to a single plate.

[0109] The foregoing description illustrates the inventive concept. Furthermore, the foregoing describes exemplary embodiments of the inventive concept, and the inventive concept can be used in various other combinations, variations, and environments. That is, variations or modifications can be made to the inventive concept without departing from the scope of the inventive concept disclosed herein, its equivalents in the written disclosure, and / or the skill or knowledge of those skilled in the art. The written embodiments describe the optimal state for realizing the technical spirit of the inventive concept, and various changes can be made as needed for specific applications and purposes of the inventive concept. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept to the disclosed embodiments. Additionally, it should be understood that the appended claims include other embodiments.

[0110] While the inventive concept has been described with reference to exemplary embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the inventive concept. Therefore, it should be understood that the above embodiments are not restrictive but illustrative.

Claims

1. A baking unit, the baking unit comprising: A housing having an upper cover and a lower frame, the upper cover and the lower frame together providing a processing space for heat treatment of a substrate; A heating plate is disposed in the processing space for heating a substrate placed on the heating plate, and the heating plate is provided with a device for heating the substrate. A heater cup, the heater cup being configured to surround the heating plate by its bottom wall while being spaced apart from the heating plate; as well as A first purge gas supply unit is configured to provide a first purge gas flow to prevent the inflow of external air through the gap between the lower frame and the heater cup.

2. The baking unit according to claim 1, wherein, The first purge gas supply unit includes: A gas input space, disposed on the side wall of the lower frame, for the inflow of a first purge gas; and An outlet is provided for discharging the first purge gas flowing into the gas input space into the gap between the heater cup and the lower frame.

3. The baking unit according to claim 2, wherein, The outlet is configured to face the side of the heater cup.

4. The baking unit according to claim 1, further comprising: A thermally insulating cup-shaped object, which is spaced apart from the bottom surface of the heater cup-shaped object; as well as The second purge gas supply unit is used to provide a second purge gas flow to prevent the inflow of external air through a plurality of through holes formed in the bottom side of the thermal insulation cup and the bottom side of the heater cup.

5. The baking unit according to claim 4, the baking unit further comprising a support member for supporting the heater containing the heating plate through the plurality of through holes.

6. The baking unit according to claim 4, wherein, The thermally insulating cup-shaped object has an internal space, and the second purge gas supply unit supplies the second purge gas into the internal space of the thermally insulating cup-shaped object.

7. The baking unit according to claim 1, further comprising a baffle unit for spraying process gas onto a substrate placed on the heating plate. And among them, The baffle unit includes: Upper plate, the upper plate having a plurality of first injection holes; and The lower plate has a plurality of second injection holes and is disposed below the upper plate.

8. The baking unit according to claim 7, wherein, Compared to the second injection hole, the first injection hole is relatively smaller in size or less in number.

9. The baking unit according to claim 7, wherein, The baffle unit further includes: A central emission unit, the central emission unit being used to form an emission flow in the central area of ​​the processing space; A peripheral emission unit is used to form an emission flow in the periphery of the processing space.

10. The baking unit according to claim 4, wherein, The first purge gas and the second purge gas are inert gases with a constant temperature.

11. A substrate processing apparatus, the substrate processing apparatus comprising: A chamber having an internal space; A baking unit is disposed in the internal space of the chamber to provide a heat treatment space in which a substrate baking process is performed. as well as A cooling unit is disposed on one side of the baking unit for cooling the substrate; And wherein the baking unit includes: A housing having an upper cover and a lower frame, the upper cover and the lower frame together providing a processing space for heat treatment of a substrate; A heating plate is disposed in the processing space for heating a substrate placed on the heating plate, and the heating plate is provided with a device for heating the substrate. A heater cup, the heater cup being configured to surround the heating plate by a bottom wall spaced apart from the heating plate; and A first purge gas supply unit is configured to provide a first purge gas flow to prevent external air from flowing in through the gap between the lower frame and the heater cup.

12. The substrate processing apparatus according to claim 11, wherein, The first purge gas supply unit includes: A gas input space, wherein the gas input space is disposed at the side wall of the lower frame for the inflow of a first purge gas; and An outlet is provided for discharging the first purge gas flowing into the gas input space into the gap between the heater cup and the lower frame, the outlet facing the side of the heater cup.

13. The substrate processing apparatus according to claim 11, wherein, The baking unit also includes: A thermally insulating cup-shaped object, which is spaced apart from the bottom surface of the heater cup-shaped object; A support member, which supports a heater containing the heating plate through a plurality of through holes formed on the bottom side of the heater cup and the bottom side of the thermal insulation cup; and The second purge gas supply unit is used to provide a second purge gas flow to prevent the inflow of external air through the plurality of through holes.

14. The substrate processing apparatus according to claim 13, wherein, The thermally insulating cup has an internal space, and the second purge gas supply unit provides the second purge gas into the internal space of the thermally insulating cup.

15. The substrate processing apparatus according to claim 11, wherein, The baking unit further includes a baffle unit for spraying process gas onto a substrate placed on the heating plate. The baffle unit includes: Upper plate, the upper plate having a plurality of first injection holes; and The lower plate has a plurality of second injection holes and is disposed below the upper plate.

16. The substrate processing apparatus according to claim 15, wherein, Compared to the second injection hole, the first injection hole is relatively smaller in size or less in number.

17. A baking unit, the baking unit comprising: A housing having an upper cover and a lower frame, the upper cover and the lower frame together providing a processing space for heat treatment of a substrate; A heating plate, disposed within the processing space, for heating a substrate placed on the heating plate; A heater cup, the heater cup being configured such that a bottom wall surrounds the heating plate while spaced apart from the heating plate; A thermally insulating cup-shaped object, which is spaced apart from the bottom surface of the heater cup-shaped object; Multiple support members are provided for supporting a heater containing the heating plate through multiple through holes formed on the bottom side of the heater cup and the bottom side of the thermal insulation cup. A first purge gas supply unit is used to provide a first purge gas flow to prevent external air from flowing in through the gap between the lower frame and the heater cup. The second purging gas supply unit is used to provide a second purging gas flow to prevent external air from flowing in through the plurality of through holes; as well as, A baffle unit for injecting process gas onto a substrate placed on the heating plate.

18. The baking unit according to claim 17, wherein, The first purge gas supply unit includes: A gas input space, disposed on the side wall of the lower frame, for the inflow of a first purge gas; and An outlet is provided for discharging the first purge gas flowing into the gas input space into the gap between the heater cup and the lower frame, the outlet facing the side of the heater cup.

19. The baking unit according to claim 17, wherein, The second purge gas supply unit supplies the second purge gas into the internal space of the thermally insulating cup.

20. The baking unit according to claim 17, wherein, The baking unit includes: Upper plate, the upper plate having a plurality of first injection holes; and The lower plate, having a plurality of second injection holes, is disposed below the upper plate. Compared to the second injection hole, the first injection hole is relatively smaller in size or less in number.

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