Degassing chamber and semiconductor process equipment

Abstract

The present application discloses a degassing chamber and semiconductor process equipment, wherein the degassing chamber includes a cavity, a heating device and a light shielding plate, wherein: along the height direction of the degassing chamber, the heating device is arranged above the cavity, and the heating device is used to project light to a wafer placed in the cavity to heat the wafer; the light shielding plate is provided with a plurality of through light-transmitting holes, and the light-transmitting holes are used to allow the light to pass through; the light shielding plate has a first state and a second state, and when the light shielding plate is in the first state, the light shielding plate avoids the light path of the light; when the light shielding plate is in the second state, the light shielding plate is located on the light path of the light. The above scheme can solve the problem of insufficient applicability of the degassing chamber in the related art when facing the degassing temperature requirements in different intervals.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a degassing chamber and semiconductor process equipment. Background Art

[0002] In many semiconductor manufacturing processes (such as physical vapor deposition), wafers need to be transferred to a degassing chamber for degassing to heat the wafers and remove gas impurities (such as water vapor) to prevent these gas impurities from adversely affecting subsequent processes.

[0003] In the related art, the degassing chamber includes a halogen lamp, and the halogen lamp is used to irradiate the wafer for heating and degassing. The temperature controllable range of a commonly used halogen lamp (e.g., rated power 800W) is 180°C to 450°C. If the required degassing temperature of the wafer is lower than 180°C, such as 150°, then the operating power of the halogen lamp will be lower than 10% of the rated power (recommended minimum operating power). In this case, the output of the halogen lamp will become extremely unstable, and the actual temperature will fluctuate between 100°C and 200°C, which will lead to poor degassing quality.

[0004] Therefore, when the degassing chamber of the related art faces application scenarios with degassing temperature requirements in different ranges, it is necessary to frequently replace halogen lamps with different rated powers. Summary of the invention

[0005] The present application discloses a degassing chamber and a semiconductor process equipment to solve the problem of insufficient applicability of the degassing chamber in the related art when facing degassing temperature requirements in different ranges.

[0006] In order to solve the above problems, this application adopts the following technical solutions:

[0007] In a first aspect, the present application provides a degassing chamber, comprising a chamber, a heating device and a light shielding plate, wherein:

[0008] The heating device is disposed above the cavity along the height direction of the degassing chamber, and the heating device is used to project light to the wafer placed in the cavity to heat the wafer;

[0009] The shading plate is provided with a plurality of through light-transmitting holes for allowing the light to pass through; the shading plate has a first state and a second state, and when the shading plate is in the first state, the shading plate avoids the light path of the light; when the shading plate is in the second state, the shading plate is located in the light path of the light.

[0010] In a second aspect, the present application provides a semiconductor process equipment, comprising the degassing chamber described in the first aspect of the present application.

[0011] The technical solution adopted in this application can achieve the following beneficial effects:

[0012] In the degassing chamber disclosed in the present application, a light shielding plate with light-transmitting holes is arranged in the chamber to control the light intensity projected onto the wafer, so as to stably provide degassing temperatures in different ranges while maintaining the heating device at the lowest operating power.

[0013] When the wafer requires a higher range of degassing temperatures, the shading plate can be switched to the first state. At this time, the shading plate avoids the light path of the light, and all the light emitted by the heating device is projected onto the wafer, that is, the light intensity received by the wafer is the largest at this time, so a higher range of degassing temperatures can be provided. When the wafer requires a lower range of degassing temperatures, the shading plate can be switched to the second state. At this time, the shading plate is located in the light path of the light, and only part of the light is projected onto the wafer. This can undoubtedly reduce the light intensity received by the wafer, thereby providing a lower range of degassing temperatures.

[0014] It can be seen that when adjusting the degassing temperature, the degassing chamber of the present application does not need to change the working power of the heating device as in the related art, and can provide degassing temperatures in different ranges to meet different application scenarios. Therefore, the degassing chamber of the present application does not have the disadvantage of requiring frequent replacement of the heating device, but has strong adaptability. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0016] Figure 1 A schematic diagram of the structure of the degassing chamber disclosed in an embodiment of the present application;

[0017] Figure 2 This is a schematic structural diagram of the first sunshade disclosed in the embodiment of the present application;

[0018] Figure 3 A schematic diagram of the structure of a second sunshade disclosed in an embodiment of the present application;

[0019] Figure 4 This is a graph showing how the shading degree of the shading plate disclosed in the embodiment of the present application changes with the opening ratio.

[0020] Description of reference numerals:

[0021] 100-cavity, 110-first sub-cavity, 111-top wall, 111a-step groove, 120-second sub-cavity,

[0022] 200-heating device, 210-light emitting part, 220-electrical cover, 230-mounting seat,

[0023] 300-shading plate, 310-light transmission hole,

[0024] 400-driving device, 500-medium window, 600-cooling device,

[0025] W-wafer, B1-first bracket, B2-second bracket. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0027] The technical solutions disclosed in various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0028] In order to solve the problem of insufficient applicability of the degassing chamber in the related art when facing the degassing temperature requirements in different ranges, the embodiment of the present application provides a degassing chamber for degassing the workpiece to be processed. In the embodiment of the present application, the workpiece to be processed can be a wafer or other semiconductor devices.

[0029] See also Figure 1 to Figure 4 The degassing chamber disclosed in the embodiment of the present application includes a cavity 100, a heating device 200 and a light shielding plate 300.

[0030] The cavity 100 is the basic component of the degassing chamber, which can provide a foundation for the installation of other components. Specifically, the interior of the cavity 100 is used as a process space for degassing treatment, and the wafer W can be placed therein and degassed by heating. Figure 1 As shown, a first support B1 may be disposed in the chamber 100 , and the first support B1 is used to place the wafer W so as to maintain the wafer W in a posture that is conducive to the degassing process.

[0031] The heating device 200 and the light shielding plate 300 are both functional components related to the degassing process.

[0032] The heating device 200 is disposed above the cavity 100 along the height direction of the degassing chamber, and is used to project light to the wafer W placed in the cavity 100 to heat the wafer W. Under this structural layout, the heating device 200 is convenient to project light from above, and after the light is projected to the wafer W, the wafer W can be heated under continuous irradiation.

[0033] In the degassing chamber disclosed in the present application, a shading plate 300 having a light-transmitting hole 310 is arranged in the cavity 100 to control the intensity of light projected onto the wafer W, so that the heating device 200 can stably provide degassing temperatures in different ranges, i.e., ensure that the provided degassing temperature does not fluctuate.

[0034] Specifically, the shading plate 300 is provided with a plurality of through light-transmitting holes 310 for allowing light to pass through; the shading plate 300 has a first state and a second state. When the shading plate 300 is in the first state, the shading plate 300 avoids the light path of the light; when the shading plate 300 is in the second state, the shading plate 300 is located on the light path of the light.

[0035] It should be understood that the light shielding plate 300 can block the light path of the light emitted by the heating device 200, so that the light can only propagate through the light-transmitting hole 310, which can change the amount of light projected onto the wafer W, thereby changing the light intensity received by the wafer W. Under different light intensities, different ranges of degassing temperatures can be provided for the wafer W.

[0036] When the wafer W requires a degassing temperature in a higher range (e.g., 180°C to 450°C), the shading plate 300 can be switched to the first state. At this time, the shading plate 300 avoids the light path of the light, and all the light emitted by the heating device 200 is projected onto the wafer W, that is, at this time, the light intensity received by the wafer W is the largest, so a degassing temperature in a higher range can be provided. When the wafer W requires a degassing temperature in a lower range (e.g., 100°C to 150°C), the shading plate 300 can be switched to the second state. At this time, the shading plate 300 is located in the light path of the light, and only part of the light is projected onto the wafer W. In this way, the light intensity received by the wafer W can undoubtedly be reduced, thereby providing a degassing temperature in a lower range.

[0037] It can be seen that when adjusting the degassing temperature, the degassing chamber of the present application does not need to change the working power of the heating device 200 as in the related art, and can provide degassing temperatures in different ranges to meet different application scenarios. Therefore, the degassing chamber of the present application does not have the disadvantage of requiring frequent replacement of the heating device 200, but has strong adaptability.

[0038] In the embodiment of the present application, there are many types of specific structures of the degassing chamber. For example, from the aspect of the setting position of the light shielding plate 300, optionally, as Figure 1 As shown, the shading plate 300 of the embodiment of the present application can be disposed in the cavity 100 . Of course, it can also be disposed outside the cavity 100 .

[0039] In the embodiment where the light shielding plate 300 is disposed in the cavity 100 , the light shielding plate 300 can utilize the installation space in the cavity 100 to improve the overall structural compactness of the degassing chamber.

[0040] Furthermore, if Figure 1 As shown, the chamber 100 of the embodiment of the present application may include a first sub-chamber 110 and a second sub-chamber 120, the first sub-chamber 110 is used to place the wafer W, the second sub-chamber 120 is connected to the first sub-chamber 110, and the second sub-chamber 120 is connected to the outer wall of the first sub-chamber 110; when the light shielding plate 300 is in the first state, the light shielding plate 300 is located in the second sub-chamber 120; when the light shielding plate 300 is in the second state, the light shielding plate 300 is located in the first sub-chamber 110.

[0041] In this structural layout, the first sub-chamber 110 can provide a degassing processing space, and the second sub-chamber 120 can provide a storage space for storing the light shielding plate 300. When the wafer W requires a degassing temperature in a higher range, the light shielding plate 300 can be switched to the first state, so that the light shielding plate 300 is located in the second sub-chamber 120. At this time, all the light in the first sub-chamber 110 is directly projected onto the wafer W, thereby providing a degassing temperature in a higher range. When the wafer W requires a degassing temperature in a lower range, the light shielding plate 300 can be switched to the second state, so that the light shielding plate 300 is located in the first sub-chamber 110. At this time, the light shielding plate 300 will block the light path of the light, and only the light transmitted through the light-transmitting hole 310 is projected onto the wafer W, thereby providing a degassing temperature in a lower range.

[0042] In the embodiment where the cavity 100 is an integral chamber, a storage space for storing the shading plate 300 may be reserved on the side of the position where the wafer W is placed in the cavity 100, so that the shading plate 300 can be switched between the first state and the second state.

[0043] In order to improve the efficiency and accuracy of regulating the shading plate 300, as Figure 1 As shown, the degassing chamber of the embodiment of the present application may also include a driving device 400, which is connected to the light shielding plate 300 and is used to drive the light shielding plate 300 to rotate so that the light shielding plate 300 switches between the first state and the second state. Under this structural layout, under the driving action of the driving device 400, the rotation of the light shielding plate 300 is realized, so that the light shielding plate 300 and the cavity 100 can generate relative rotation. During the rotation of the light shielding plate 300, it can realize the switching between the first state and the second state.

[0044] The embodiment in which the cavity 100 includes the first sub-cavity 110 and the second sub-cavity 120 is described as follows. Figure 1As shown, the shading plate 300 is in the first state, at which time, the shading plate 300 is located in the second sub-cavity 120. When the shading plate 300 needs to be switched to the second state, the driving device 400 is started and the shading plate 300 is driven to rotate to the first sub-cavity 110. If the shading plate 300 needs to be switched to the first state again, the shading plate 300 is driven to rotate to the second sub-cavity 120 by the driving device 400.

[0045] It can be seen that by providing the driving device 400, the control of the sunshade 300 can be made more convenient. In this embodiment, the driving device 400 can be selected as a conventional motor.

[0046] In the embodiment of the present application, the shading plate 300 is not limited to the rotational action form. For example, the shading plate 300 can also switch the state by moving, flipping, etc. In the moving implementation, the driving device 400 is used to drive the shading plate 300 to move.

[0047] Similarly, the embodiment in which the cavity 100 includes a first sub-cavity 110 and a second sub-cavity 120 is described. When the light shielding plate 300 needs to be switched to the second state, the driving device 400 is started and the light shielding plate 300 is driven to move and extend into the first sub-cavity 110. If the light shielding plate 300 needs to be switched to the first state again, the light shielding plate 300 is driven to move and retract into the second sub-cavity 120 by the driving device 400.

[0048] In this embodiment, the driving device 400 can be selected as a linear motor, a hydraulic telescopic component, a pneumatic telescopic component, etc.

[0049] In order to facilitate the connection between the driving device 400 and the sunshade 300 , the output end of the driving device 400 may be connected to a second bracket B2 , and the second bracket B2 is used for mounting the sunshade 300 .

[0050] In another embodiment, the sunshade 300 may include a control handle extending outside the cavity 100, and the operator may change the position state of the sunshade 300 in the cavity 100 by operating the control handle outside the cavity 100, thereby achieving state switching.

[0051] In order to improve the uniformity of light exposure to the wafer W when the light shielding plate 300 is in the second state, as shown in FIG. Figure 2 and Figure 3 As shown, in the embodiment of the present application, along the radial direction of the light shielding plate 300, the light-transmitting holes 310 are arranged into a plurality of circular rings, and the plurality of circular rings are concentric circular rings.

[0052] In this structural layout, that is, in the direction from the center to the edge of the light shielding plate 300 or in the direction from the edge to the center of the light shielding plate 300, the light-transmitting holes 310 are arranged in a plurality of circular rings, and at the same time, the centers of the circles are concentric, so that the arrangement of the light-transmitting holes 310 on the light shielding plate 300 is more uniform and regular. When the light shielding plate 300 is in the second state, when the light is projected onto the wafer W through the light-transmitting holes 310, the transmitted light is also in the shape of the above-mentioned concentric circular rings, which can undoubtedly make the light distribution received by the wafer W more uniform, thereby improving the balanced heating effect and avoiding heating temperature deviations in different areas of the wafer W.

[0053] In the embodiment of the present application, the light-transmitting hole 310 has various shapes. For example, the light-transmitting hole 310 may be a circular hole (eg Figure 2 ) or square holes (such as Figure 3 ). Since the shapes of the circular hole and the square hole are relatively regular, it is more convenient to calculate the light-transmitting area of ​​the light-transmitting hole 310, which helps to calculate the overall light-shielding degree of the light-shielding plate 300. Of course, the light-transmitting hole 310 can also be other types such as a triangular hole, an elliptical hole, etc.

[0054] In order to ensure that the shading effect of the shading plate 300 is controllable, as Figure 1 As shown, in the embodiment of the present application, when the light shielding plate 300 is in the second state, along the height direction of the degassing chamber, the light shielding plate 300 covers the wafer W. It should be understood that, under such a setting, when the light shielding plate 300 is in the second state, along the height direction of the degassing chamber, the projection of the light shielding plate 300 on the inner bottom wall of the cavity 100 can completely cover the wafer W, so that when the light is projected into the cavity 100, it can be avoided that there is light projected from the edge of the light shielding plate 300 to the wafer W, so as to ensure that the light projected on the wafer W is all transmitted through the light shielding plate 300, and then the light shielding degree of the light shielding plate 300 can be accurately calculated to achieve precise control of the degassing temperature.

[0055] like Figure 4 As shown, the area ratio of the opening of the light-transmitting hole 310 on the light-shielding plate 300 is inversely proportional to the light-shielding degree of the light-shielding plate 300 .

[0056] In a specific embodiment, the light shielding plate 300 is a circular plate with a diameter of 240 mm, and the diameter of the wafer is 200 mm, so that the light shielding plate 300 can completely cover the wafer. The light-transmitting hole 310 is a circular hole with a diameter of 2 mm. By setting a preset number of circular light-transmitting holes 310, the overall light-transmitting area of ​​the light-transmitting hole 310 is half of the area of ​​the light shielding plate 300. Therefore, the light transmittance of the light shielding plate 300 is 50%.

[0057] In this embodiment, when the degassing temperature of wafer W is required to be between 180°C and 450°C, a heating lamp (such as a halogen lamp) with a rated power of 800W can be used to heat the wafer. At this time, the shading plate 300 is located in the second sub-chamber 120, and the light of the heating lamp is all projected onto wafer W. When the degassing temperature of wafer W is required to be between 100°C and 180°C, the shading plate W can be moved to the first sub-chamber 110, so that only 50% of the light of the heating lamp can pass through the shading plate 300 to reach wafer W. At this time, the 800W heating lamp has the same heating effect as the 400W heating lamp, so that the heating and degassing of wafer W can be achieved without opening a chamber to replace a heating lamp with a lower rated power, and the heating lamp can operate at a power greater than the minimum operating power, thereby ensuring the stability of the degassing temperature.

[0058] In another specific embodiment, the shading plate 300 is a circular plate with a diameter of 240 mm, the diameter of the wafer is 200 m, and the light-transmitting hole 310 is a square hole with a side length of 3 mm. A preset number of circular light-transmitting holes 310 are set so that the overall light-transmitting area of ​​the light-transmitting holes 310 is two-thirds of the area of ​​the shading plate 300. Therefore, the transmittance of the shading plate 300 is 33.3%.

[0059] Therefore, in the degassing chamber of the embodiment of the present application, by presetting the shading plate 300 with different shading degrees, it is possible to adapt to application scenarios with different degassing temperature requirements. Specifically, in order to ensure that the shading plate 300 fully blocks the light, the material of the shading plate 300 can be metal. Considering the temperature accumulation of the shading plate 300 and the function of fully blocking the light, the material is preferably metal titanium or aluminum. These two metals have small thermal expansion coefficients and good shading effects.

[0060] During the process in the degassing chamber, byproducts will volatilize in the form of gas, and these byproducts may gather and fall on the wafer W, which will contaminate the wafer W. Based on this, the surface of the light shielding plate 300 of the embodiment of the present application may have a preset roughness, and the preset roughness is obtained by sandblasting the surface of the light shielding plate 300. It should be understood that under such a setting, the surface of the light shielding plate 300 has a large roughness (the preset roughness must meet the process requirements), and when the gaseous byproducts volatilize, they will adhere to the light shielding plate 300, thereby preventing the byproducts from gathering and falling on the wafer W, so as to avoid the wafer W from being contaminated and optimize the degassing process quality.

[0061] It can be seen that the light shielding plate 300 of the embodiment of the present application can not only have the light shielding function, but also can adhere to the by-products to optimize the degassing process quality of the wafer W.

[0062] Optionally, in order to prevent the light-transmitting hole 310 of the light-shielding plate 300 from being blocked by the byproducts, the hole wall of the light-transmitting hole 310 may be smoothed to prevent the byproducts from adhering and gathering in the light-transmitting hole 310 .

[0063] Among the options, Figure 1 As shown, the degassing chamber of the embodiment of the present application may also include a dielectric window 500. The top wall 111 of the cavity 100 is provided with a step groove 111a. The step groove 111a is arranged opposite to the heating device 200. The dielectric window 500 is arranged in the step groove 111a. Light is projected into the cavity 100 through the dielectric window 500.

[0064] Specifically, the dielectric window 500 seals the top wall 111 of the cavity 100 to form a sealed space in the cavity 100. Furthermore, the cavity 100 is a vacuum environment. The dielectric window 500 is used to transmit the light projected by the light-transmitting heating device 200 so that the light can be smoothly projected to the wafer W placed in the cavity 100.

[0065] In the embodiment of the present application, the specific material of the dielectric window 500 is not limited. For example, the dielectric window 500 can be a transparent glass window, a quartz window, a ceramic window, etc. The dielectric window 500 made of quartz material has high corrosion resistance and high temperature resistance in addition to high light transmittance, which is conducive to use in the semiconductor process environment.

[0066] like Figure 1 As shown, the heating device 200 of the embodiment of the present application may include a light-emitting element 210 and an electrical cover 220, wherein the electrical cover 220 is disposed on the top wall 111 of the cavity 100, and the light-emitting element 210 is disposed in the electrical cover 220. Specifically, a receiving space for placing the light-emitting element 210 is formed in the electrical cover 220, and the electrical cover 220 protects the light-emitting element 210.

[0067] Optionally, the light emitting element 210 is a halogen lamp. Of course, there can be multiple light emitting elements 210.

[0068] Furthermore, if Figure 1 As described above, the heating device 200 of the embodiment of the present application further includes a mounting base 230 , and the mounting base 230 is used to mount the light-emitting element 210 .

[0069] At the same time, at least one of the mounting seat 230 and the cavity 100 is provided with a cooling device 600. It should be understood that in the embodiment of the present application, the cooling device 600 may be provided in one of the mounting seat 230 and the cavity 100, or the cooling device 600 may be provided in both the mounting seat 230 and the cavity 100. Figure 1 As shown, a cooling device 600 is disposed in the mounting seat 230 .

[0070] If the mounting base 230 is provided with a cooling device 600, the cooling device 600 can cool the mounting base 230, thereby extending the service life of the heating device 200. Specifically, the cooling device 600 may include a cooling channel and a cooling medium disposed in the cooling channel. The cooling material may be a liquid medium or a gaseous medium, as long as it can flow in the cooling channel and achieve cooling. Of course, the cooling device 600 may also adopt other structural forms, which will not be described in detail herein.

[0071] Based on the aforementioned degassing chamber, an embodiment of the present application further provides a semiconductor process equipment, which includes the degassing chamber in any of the aforementioned schemes, so that the semiconductor process equipment has the beneficial effects of any of the aforementioned schemes, which will not be repeated here.

[0072] Optionally, the semiconductor process equipment of the embodiment of the present application is a physical vapor deposition equipment, which also includes a pre-cleaning chamber and a deposition chamber. During the process, the wafer W can be sequentially transferred into the degassing chamber, the pre-cleaning chamber and the deposition chamber to perform a degassing treatment process, a pre-cleaning treatment process and a thin film deposition treatment process, respectively.

[0073] Of course, the embodiments of the present application do not limit the specific type of the semiconductor process equipment, and it can also be a thin film growth equipment, annealing equipment, etc., as long as it has a degassing process.

[0074] The above embodiments of the present application focus on describing the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0075] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. A degassing chamber, characterized in that: The invention comprises a cavity, a heating device and a light shielding plate, wherein: The heating device is disposed above the cavity along the height direction of the degassing chamber, and the heating device is used to project light to the wafer placed in the cavity to heat the wafer; The light shielding plate is provided with a plurality of through light-transmitting holes for allowing the light to pass through, and along the radial direction of the light shielding plate, the light-transmitting holes are arranged into a plurality of circular rings, and the plurality of circular rings are concentric circular rings; the light shielding plate has a first state and a second state, and when the light shielding plate is in the first state, the light shielding plate avoids the light path of the light; when the light shielding plate is in the second state, the light shielding plate is located between the heating device and the wafer, and the light shielding plate is located on the light path of the light.

2. The degassing chamber according to claim 1, characterized in that The shading plate is arranged in the cavity.

3. The degassing chamber according to claim 2, characterized in that The cavity includes a first sub-cavity and a second sub-cavity, the first sub-cavity is used to place the wafer, the second sub-cavity is communicated with the first sub-cavity, and the second sub-cavity is connected to the outer wall of the first sub-cavity; when the light shielding plate is in the first state, the light shielding plate is located in the second sub-cavity; when the light shielding plate is in the second state, the light shielding plate is located in the first sub-cavity.

4. The degassing chamber according to claim 1, characterized in that The degassing chamber further comprises a driving device, which is connected to the shading plate and is used to drive the shading plate to rotate so as to switch the shading plate between the first state and the second state.

5. The degassing chamber according to claim 1, characterized in that The light-transmitting hole is a circular hole or a square hole.

6. The degassing chamber according to claim 1, characterized in that When the light shielding plate is in the second state, the light shielding plate covers the wafer along the height direction of the degassing chamber.

7. The degassing chamber according to claim 1, characterized in that The material of the shading plate is titanium or aluminum.

8. The degassing chamber according to claim 1, characterized in that The surface of the shading plate has a preset roughness, and the preset roughness is obtained by sandblasting the surface of the shading plate.

9. The degassing chamber according to claim 1, characterized in that The degassing chamber further comprises a dielectric window. The top wall of the cavity is provided with a step groove, the step groove is arranged opposite to the heating device, the dielectric window is arranged in the step groove, and the light is projected into the cavity through the dielectric window.

10. The degassing chamber according to claim 1, characterized in that The heating device comprises a light emitting member and an electrical cover. The electrical cover is arranged on the top wall of the cavity, and the light emitting member is arranged inside the electrical cover.

11. The degassing chamber according to claim 10, characterized in that The heating device further comprises a mounting seat, and the mounting seat is used for mounting the light-emitting element; at least one of the mounting seat and the cavity is provided with a cooling device.

12. A semiconductor process equipment, characterized in that: A degassing chamber comprising the degassing chamber of any one of claims 1 to 11.

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