A filling method and device

Abstract

An embodiment of the present invention discloses a filling method, which is applied to components. There are at least two components, and the components are connected to a substrate layer. A first groove region is formed by enclosing between two adjacent components and the substrate layer. The method includes: obtaining a first aspect ratio corresponding to the first groove region; when the first aspect ratio exceeds a specified threshold, depositing a first filling layer corresponding to the first aspect ratio in the first groove region, so that a second groove region is formed by enclosing between the component and the first filling layer; obtaining a second aspect ratio corresponding to the second groove region; when the second aspect ratio does not exceed the specified threshold, depositing a first covering layer, so that the first covering layer and the first filling layer completely cover the component.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to a filling method and device. Background Art

[0002] It is often necessary to fill an isolation layer between components to isolate the components. There are various shapes of components. When the groove between components has a high aspect ratio, holes often occur when filling the isolation material, and the existence of holes easily leads to situations such as accidental filling of subsequent metal, resulting in the failure of isolation. Summary of the Invention

[0003] Embodiments of the present invention provide a filling method and device, which have the characteristic of completely covering the groove between components.

[0004] On the one hand, an embodiment of the present invention provides a filling method applied to components. The components are at least two, and the components are connected to a substrate layer. A first groove region is formed by enclosing two adjacent components and the substrate layer. The method includes: obtaining a first aspect ratio corresponding to the first groove region; when the first aspect ratio exceeds a specified threshold, depositing a first filling layer corresponding to the first aspect ratio in the first groove region, so that the component and the first filling layer enclose a second groove region; obtaining a second aspect ratio corresponding to the second groove region; when the second aspect ratio does not exceed the specified threshold, depositing a first covering layer, so that the first covering layer and the first filling layer completely cover the component.

[0005] In an implementable manner, before depositing the first filling layer corresponding to the first aspect ratio in the first groove region, the method further includes: depositing a protective layer above the component, and the protective layer is used to protect the component.

[0006] In an implementable manner, the depositing the first filling layer corresponding to the first aspect ratio in the first groove region, so that the component and the first filling layer enclose a second groove region includes: depositing a second covering layer above the component, and the second covering layer is used to cover the component and the substrate layer; depositing a third covering layer on the second covering layer, and the third covering layer is used to cover the second covering layer; performing a back-etching on the third covering layer, so that the third covering layer forms a hard mask in the first groove; performing a back-etching on the second covering layer, and the second covering layer in the first groove forms a first filling layer under the protection of the hard mask; removing the hard mask, so that the component and the first filling layer enclose the second groove region.

[0007] In one implementable manner, the re-etching of the second cover layer includes: obtaining first etching conditions of the second cover layer; and re-etching the second cover layer according to the first etching conditions.

[0008] In one implementable manner, the re-etching of the third cover layer includes: obtaining second etching conditions corresponding to the third cover layer; and re-etching the second cover layer according to the second etching conditions, wherein the second etching conditions are different from the first etching conditions.

[0009] In one implementable manner, depositing a first filling layer corresponding to a first aspect ratio in the first groove region, so that the element and the first filling layer enclose a second groove region, includes: depositing a fourth cover layer above the element, the fourth cover layer being used to cover the element and the substrate layer; re-etching the fourth cover layer so that the fourth cover layer forms a first filling layer with a specific shape in the first groove; and the element and the first filling layer enclose the second groove region.

[0010] In one implementable manner, after obtaining the second aspect ratio corresponding to the second groove region, the method further includes: when the second aspect ratio exceeds a specified threshold, depositing a second filling layer corresponding to the first aspect ratio in the second groove region, so that the element and the second filling layer enclose a third groove region; obtaining a third aspect ratio corresponding to the third groove region; and when the third aspect ratio does not exceed the specified threshold, depositing a first cover layer so that the first cover layer and the first filling layer completely cover the element.

[0011] In one implementable manner, the protective layer corresponds to third etching conditions, and the third etching conditions are different from the first etching conditions; the third etching conditions are different from the second etching conditions.

[0012] In one implementable manner, the first cover layer, the second cover layer, and the fourth cover layer are first dielectric material layers; the third cover layer is a second dielectric material layer; and the protective layer is a third dielectric material layer.

[0013] Another aspect of the embodiments of the present invention provides a device, which includes a substrate layer, elements, and an isolation unit; there are at least two elements, the elements are connected to the substrate layer, and a first groove region is formed by enclosing the substrate layer between two adjacent elements; the isolation unit includes a first filling layer and a first covering layer, the first filling layer is located in the first groove region, and a second groove region is formed between the first filling layer and the elements; the first covering layer is connected to the first filling layer and is used to fill the second groove region, and the first covering layer and the first filling layer completely cover the elements.

[0014] In the embodiments of the present invention, a filling method is provided, which can completely fill the grooves formed between elements, completely isolate the elements, so as to avoid the formation of air bubbles between the elements, and further avoid the entry of conductive materials or other material substances into the air bubbles between the elements, resulting in the failure of isolation between the elements. Description of the Drawings

[0015] By referring to the drawings and reading the following detailed description, the above and other objects, features, and advantages of the exemplary embodiments of the present invention will become easily understandable. In the drawings, several embodiments of the present invention are shown in an exemplary rather than restrictive manner, where:

[0016] In the drawings, the same or corresponding reference numerals represent the same or corresponding parts.

[0017] Figure 1 Schematic diagrams of multiple elements of a filling method according to an embodiment of the present invention;

[0018] Figure 2 Schematic diagram of deposition of a protective layer of a filling method according to an embodiment of the present invention;

[0019] Figure 3 Schematic diagram of deposition of a second covering layer of a filling method according to an embodiment of the present invention;

[0020] Figure 4 Schematic diagram of deposition of a third covering layer of a filling method according to an embodiment of the present invention;

[0021] Figure 5 Schematic diagram of back-etching of a third covering layer of a filling method according to an embodiment of the present invention;

[0022] Figure 6 Schematic diagram of formation of a first filling layer of a filling method according to an embodiment of the present invention;

[0023] Figure 7 Schematic diagram of removal of a hard mask of a filling method according to an embodiment of the present invention;

[0024] Figure 8Schematic diagram of the deposition of the second filling layer in a filling method according to an embodiment of the present invention;

[0025] Figure 9 Schematic diagram of the removal of the protective layer in a filling method according to an embodiment of the present invention;

[0026] Figure 10 Schematic diagram of the deposition of the first covering layer in a filling method according to an embodiment of the present invention;

[0027] Figure 11 Schematic diagram of the deposition of the fourth covering layer in a filling method according to an embodiment of the present invention;

[0028] Figure 12 Schematic diagram of the generation of the first filling layer with a specific shape in a filling method according to an embodiment of the present invention.

[0029] Among them, the reference numerals are as follows:

[0030] 1, component; 2, substrate layer; 3, first groove region; 31, first filling layer; 32, second filling layer; 33, first covering layer; 34, second covering layer; 35, third covering layer; 36, fourth covering layer; 37, hard mask; 4, second groove region; 41, third groove region; 5, protective layer. Detailed implementation manners

[0031] To make the objectives, features, and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present invention.

[0032] Figure 1 Schematic diagram of multiple components in a filling method according to an embodiment of the present invention; Figure 7 Schematic diagram of the removal of the hard mask in a filling method according to an embodiment of the present invention; Figure 10 Schematic diagram of the deposition of the first covering layer in a filling method according to an embodiment of the present invention; Refer to Figure 1 、 Figure 7 and Figure 10 ;

[0033] An embodiment of the present invention provides a filling method, which is applied to component 1. There are at least two component 1s, and component 1 is connected to the substrate layer 2. A first groove region 3 is formed by enclosing between two adjacent component 1s and the substrate layer 2. The method includes: obtaining a first aspect ratio corresponding to the first groove region 3; when the first aspect ratio exceeds a specified threshold, depositing a first filling layer 31 corresponding to the first aspect ratio in the first groove region 3, so that a second groove region 4 is formed by enclosing between component 1 and the first filling layer 31; obtaining a second aspect ratio corresponding to the second groove region 4; when the second aspect ratio does not exceed the specified threshold, depositing a first covering layer 33, so that the first covering layer 33 and the first filling layer 31 completely cover component 1.

[0034] In an embodiment of the present invention, a filling method is provided, which can completely fill the grooves formed between component 1s, completely isolate adjacent component 1s, so as to avoid the formation of air bubbles between adjacent component 1s, and further avoid the entry of conductive materials or other material substances into the air bubbles between component 1s, resulting in the failure of isolation between component 1s.

[0035] In this embodiment, there are at least two component 1s connected to the substrate layer 2. A first groove region 3 is formed between two component 1s and the substrate. The two component 1s can be the same component 1 or different component 1s. Among them, the component 1s provided on the substrate layer 2 include but are not limited to two. When the number of component 1s exceeds two, the first groove region 3 includes the grooves formed between every two adjacent component 1s. According to the first groove region 3, obtain the first aspect ratio corresponding to the first groove region 3; the first aspect ratio refers to the ratio of the depth to the width of the first groove region 3. When the first groove region 3 includes two or more grooves, the aspect ratio of each groove can be obtained, and the one with the largest aspect ratio value is determined as the first aspect ratio of the first groove region 3.

[0036] When the first aspect ratio exceeds a specified threshold, a first filling layer 31 corresponding to the first aspect ratio is deposited in the first groove region 3; when the first aspect ratio exceeds the specified threshold, which means that the first groove is filled once, bubbles are very likely to be generated in the first groove region 3; wherein, the specified threshold refers to the specified aspect ratio, and the specified threshold can be preset by the staff. For example, when the specified threshold is 2, it means that when the value of the aspect ratio is greater than 2, the first filling layer 31 is deposited in the first groove region 3; specifically, the value of the specified threshold can be determined according to the materials of the first filling layer 31 and the first covering layer 33. Among them, the material of the first filling layer 31 can be selected according to the characteristics of the component 1. The material of the first filling layer 31 is mainly composed of a dielectric material. Among them, the first filling layer 31 can be determined according to the first aspect ratio of the first groove region 3. Specifically, the size of the first filling layer 31 is determined by the first aspect ratio so that the first filling layer 31 fills the first groove region 3. Further, the size of the first filling layer 31 can be determined according to a specified ratio of the first aspect ratio. For example, when the first aspect ratio is 2, the specified ratio can be 30%, and the first filling layer 31 fills 30% of the depth of the first groove region 3. Among them, the first aspect ratio and the specified ratio can be inversely proportional. When the first aspect ratio is larger, the specified ratio can be smaller to facilitate the complete filling of the first groove region 3. Further, the depth dimension of the first groove region 3 can be referred to, and the scale of the first filling layer 31 is determined according to the depth dimension and the first aspect ratio of the first groove region 3, that is, the specified ratio of the first aspect ratio matching the depth dimension of the first groove region 3 can be selected as the size of the first filling layer 31 so as to better cover the first groove region 3 and avoid the generation of bubbles.

[0037] After the first filling layer 31 fills the first groove region 3, the aspect ratio of the first groove decreases, and a second groove region 4 is formed on the upper surface of the first groove region 3 and the first filling layer 31. The second groove region 4 corresponds to a second aspect ratio, and the second aspect ratio is smaller than the first aspect ratio. The second aspect ratio is compared with the specified threshold. When the second aspect ratio does not exceed the specified threshold, it proves that a single deposition can completely cover the second groove, and the deposited first covering layer 33 can completely cover the second groove region 4, thereby achieving the effect of complete isolation of the two. Among them, the first filling layer 31 is a material layer used to fill the first groove region 3 so that the aspect ratio of the first groove region 3 decreases; the first covering layer 33 is used to completely cover the component 1 and the substrate, and at the same time completely cover the second groove region 4 formed by the first groove region 3 and the first filling layer 31 so that the components 1 are completely isolated from each other; among them, the first covering layer 33 and the first filling layer 31 can be made of the same material or different materials.

[0038] Figure 2 Schematic diagram of protective layer deposition for a filling method according to an embodiment of the present invention; Figure 9 Schematic diagram of protective layer removal for a filling method according to an embodiment of the present invention; Refer to Figure 2 and Figure 9 ;

[0039] In an implementable manner, before depositing the first filling layer 31 corresponding to the first aspect ratio in the first groove region 3, the method further includes: depositing a protective layer 5 above the component 1, and the protective layer 5 is used to protect the component 1.

[0040] In this embodiment, before depositing the first filling layer 31, a protective layer 5 is deposited above the component 1. Further, the protective layer 5 is deposited on the surface of the substrate layer 2 and one side of the component 1 to completely cover the component 1 for protecting the component 1. This can prevent damage to the component 1 during subsequent etching and protect the safety of the component 1. Further, in the case where it is confirmed that the first filling can completely cover the component 1, the protective layer 5 outside the first groove region 3 is removed first, and then the first covering layer 33 is covered to achieve a better isolation effect.

[0041] Figure 3 Schematic diagram of second covering layer deposition for a filling method according to an embodiment of the present invention; Figure 4 Schematic diagram of third covering layer deposition for a filling method according to an embodiment of the present invention; Figure 5 Schematic diagram of third covering layer back-etching for a filling method according to an embodiment of the present invention; Figure 6 Schematic diagram of first filling layer formation for a filling method according to an embodiment of the present invention; Figure 7 Schematic diagram of hard mask removal for a filling method according to an embodiment of the present invention; Refer to Figure 3 、 Figure 4 、 Figure 5 、 Figure 6 and Figure 7 。

[0042] In an implementable manner, depositing a first filling layer 31 corresponding to the first aspect ratio in the first groove region 3, so that the component 1 and the first filling layer 31 enclose a second groove region 4, includes: depositing a second covering layer 34 above the component 1, and the second covering layer 34 is used to cover the component 1 and the substrate layer 2; depositing a third covering layer 35 on the second covering layer 34, and the third covering layer 35 is used to cover the second covering layer 34; performing back-etching on the third covering layer 35 so that the third covering layer 35 forms a hard mask 37 in the first groove; performing back-etching on the second covering layer 34, and the second covering layer 34 in the first groove forms a first filling layer 31 under the protection of the hard mask 37; removing the hard mask 37 so that the component 1 and the first filling layer 31 enclose a second groove region 4.

[0043] In this embodiment, a method for forming a filling layer is provided. A second covering layer 34 is deposited above the component 1. The second covering layer 34 is used to cover the component 1 and the substrate layer 2. Specifically, the second covering layer 34 covers the protective layer 5. Among them, the size of the coverage of the second covering layer 34 on the first groove region 3 is the size determined according to a specified ratio of the first aspect ratio, that is, the size of the first filling layer 31, and the size can specifically refer to the thickness. A third covering layer 35 is deposited on the second covering layer 34. The material used for the third covering layer 35 is different from that of the second covering layer 34. Preferably, the third covering layer 35 completely covers the first groove region 3, that is, the first groove region 3 is completely filled. The third covering layer 35 is etched back using the second etching condition. Since the third covering layer 35 seals the first groove region 3, during the back-etching process, a part of the third covering layer 35 is retained in the first groove region 3 as a hard mask 37 to protect the second covering layer 34 in the first groove region 3 and prevent it from being etched during the back-etching process. The second covering layer 34 is etched back using the first etching condition. With the assistance of the hard mask 37, the second covering layer 34 growing along the component 1 and the substrate is etched clean, and the second covering layer 34 at the bottom of the first groove region 3 is retained to form the first filling layer 31, thereby reducing the aspect ratio of the first groove region 3. Among them, the first etching condition is different from the second etching condition. Therefore, during the process of etching back the second covering layer 34 using the first etching condition, the hard mask 37 can play a role in protecting the second covering layer 34 at the bottom, thereby forming the first filling layer 31. The hard mask 37 is etched using the second etching condition, thereby retaining the first filling layer 31 to reduce the aspect ratio. The first filling layer 31 and the first groove region 3 enclose to form a second groove region 4.

[0044] Among them, the difference between the first etching condition and the second etching condition can be the difference in parameters or the difference in etching methods. Among them, preferably, the difference in etching methods is adopted. For example, the first etching condition is etching with chlorine gas, and the second etching condition is etching with a solution containing hydrofluoric acid; different etching parameters are adopted. For example, the first etching condition is a hydrofluoric acid solution of the first concentration, and the second etching condition is a hydrofluoric acid solution of the second concentration; the selection range of the first etching condition and the second etching condition is wide, but it must be satisfied that during the process of etching the second covering layer 34, the hard mask 37 will not be completely etched to ensure that the first filling layer 31 can be formed at the bottom of the hard mask 37.

[0045] Preferably, the first filling layer 31, the first covering layer 33, the second covering layer 34, the third covering layer 35, and the protection layer 5 are all dielectric material layers, so as to completely isolate the component 1. Among them, the materials of the first filling layer 31, the first covering layer 33, and the second covering layer 34 can be the same or different, but are different from the materials of the third covering layer 35 and the protection layer 5 to ensure different etching conditions, so that the protection layer 5 and the hard mask 37 play a protective role.

[0046] Figure 11 Schematic diagram of the deposition of the fourth covering layer in a filling method according to an embodiment of the present invention; Figure 12 Schematic diagram of the generation of the first filling layer with a specific shape in a filling method according to an embodiment of the present invention; refer to Figure 11 and Figure 12 ;

[0047] In an implementable manner, a first filling layer 31 corresponding to the first aspect ratio is deposited in the first groove region 3, so that the component 1 and the first filling layer 31 enclose a second groove region 4, including: depositing a fourth covering layer 36 above the component 1, and the fourth covering layer 36 is used to cover the component 1 and the substrate layer 2; performing back-etching on the fourth covering layer 36 so that the fourth covering layer 36 forms a first filling layer 31 with a specific shape in the first groove; the component 1 and the first filling layer 31 enclose a second groove region 4.

[0048] In this embodiment, another way of forming the filling layer is provided. A fourth covering layer 36 is deposited above the first groove region 3. The material of the fourth covering layer 36 can be the same as that of the first covering layer 33. The fourth covering layer 36 is used to cover the component 1 and the substrate. Among them, the fourth covering layer 36 is at least higher than the size of the first filling layer 31 determined according to the first aspect ratio at the lowest point of the first groove region 3. Preferably, the fourth covering layer 36 seals the first groove region 3. By performing back-etching on the fourth covering layer 36 and controlling the etching depth of the fourth covering layer 36 during the back-etching process, a first filling layer 31 with a specific shape is formed in the second groove, where the specific shape is a stepped shape, preferably in the shape of a "concave" character, which is beneficial for subsequent filling. The fourth covering layer 36 is mainly made of dielectric material. Since there is no need to form a hard mask 37 in this way, different etching conditions are not required to form the hard mask 37.

[0049] Figure 7 Schematic diagram of the removal of the hard mask in a filling method according to an embodiment of the present invention; Figure 8 Schematic diagram of the deposition of the second filling layer in a filling method according to an embodiment of the present invention; refer to Figure 7 and Figure 8 ;

[0050] In an implementable embodiment, after obtaining the second aspect ratio corresponding to the second groove region 4, the method further includes: when the second aspect ratio exceeds a specified threshold, depositing a second filling layer 32 corresponding to the first aspect ratio in the second groove region 4, so that the component 1 and the second filling layer 32 enclose a third groove region 41; obtaining the third aspect ratio corresponding to the third groove region 41; when the third aspect ratio does not exceed the specified threshold, depositing a first covering layer 33, so that the first covering layer 33 and the first filling layer 31 completely cover the component 1.

[0051] In this embodiment, in the case where the second aspect ratio of the second groove region 4 formed in the first filling layer 31 still exceeds the specified threshold, that is, the second groove region 4 is filled at one time, air bubbles are likely to appear during the filling process. By depositing a second filling layer 32 corresponding to the first aspect ratio in the groove, that is, the second filling layer 32 having the same size as the first filling layer 31, the process of recalculating the size of the filling layer according to the second aspect ratio is saved, and it is easier to implement in actual production. After the second filling layer 32 is filled, according to the third aspect ratio of the third groove region 41, when the third aspect ratio does not exceed the specified threshold, a first covering layer 33 is deposited so that the first covering layer 33 and the first filling layer 31 completely cover the component 1. When the third aspect ratio exceeds the specified threshold, the above steps are repeated until the aspect ratio does not exceed the specified threshold.

[0052] In an implementable embodiment, the first covering layer 33, the second covering layer 34, and the fourth covering layer 36 are first dielectric material layers; the third covering layer 35 is a second dielectric material layer; the protection layer 5 is a third dielectric material layer. Among them, the first dielectric material layer, the second dielectric material layer, and the third dielectric material layer are mainly made of materials with a high selectivity ratio, so that they can be accurately removed during the etching process. In this embodiment, it should be noted that the etching conditions for the first dielectric material layer and the second dielectric material layer cannot cause excessive corrosion to the protection layer 5.

[0053] Provide a specific embodiment:

[0054] As Figure 1 Two components 1 are provided on the substrate layer 2 as shown. A first groove region 3 is formed between the components 1, and the first aspect ratio of the first groove region 3 exceeds the specified threshold, which means that air bubbles are likely to be generated during the one-time filling of the first groove region 3, affecting the isolation effect.

[0055] Step 1, as Figure 2 A first dielectric layer 5 is deposited on the outer surface of the component 1 as the protection layer 5 as shown. The first dielectric layer 5 uses a first dielectric material to protect the component 1.

[0056] Step 2, asFigure 3 As shown, a second dielectric layer 34 is deposited over the first dielectric layer 5, and the second dielectric layer 34 is made of a second dielectric material.

[0057] Step 3, as Figure 4 shown, a third dielectric layer 35 is deposited over the second dielectric layer 34, and the third dielectric layer 35 is made of a third dielectric material.

[0058] Step 4, as Figure 5 shown, the third dielectric layer 35 is etched back, and a portion of the third dielectric layer 35 is retained within the first groove region 3. This portion of the third dielectric layer 35 acts as a hard mask 37 during the etching of the second dielectric layer 34.

[0059] Step 5, as Figure 6 shown, the second dielectric layer 34 is etched back, and the second dielectric layer 34 within the first groove region 3 is retained under the protection of the hard mask 37, which is the filling layer 31, to reduce the aspect ratio of the first groove.

[0060] Step 6, as Figure 7 shown, the third dielectric layer 35 that remains as the hard mask 37 is removed.

[0061] Step 7, determine according to the aspect ratio of the filled first groove region 3;

[0062] When the aspect ratio after filling exceeds a specified threshold, as Figure 8 shown, repeat the above steps 2 - 6 to further reduce the aspect ratio of the groove;

[0063] When the aspect ratio after filling does not exceed the specified threshold, as Figure 9 shown, after removing the first dielectric layer 5 in the open area, a second dielectric layer 34 is deposited over the component 1 to completely isolate the component 1. That is, as Figure 10 shown.

[0064] Another aspect of the embodiments of the present invention provides a device, which includes a substrate layer 2, a component 1, and an isolation unit; there are at least two components 1, the component 1 is connected to the substrate layer 2, and a first groove region 3 is formed by enclosing between two adjacent components 1 and the substrate layer 2; the isolation unit includes a first filling layer 31 and a first covering layer 33, the first filling layer 31 is located within the first groove region 3, a second groove region 4 is formed between the first filling layer 31 and the component 1; the first covering layer 33 is connected to the first filling layer 31 and is used to fill the second groove region 4, and the first covering layer 33 and the first filling layer 31 completely cover the component 1.

[0065] In the description of this specification, the descriptions referring to terms such as "one embodiment", "some embodiments", "examples", "specific examples", or "some examples", etc., mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0066] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined.

[0067] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of changes or substitutions, which should all be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A filling method, characterized in that, Applied to components (1), where there are at least two of the components (1), the components (1) are connected to a substrate layer (2), and a first groove region (3) is formed by enclosing between two adjacent components (1) and the substrate layer (2). The method includes: Obtaining a first aspect ratio corresponding to the first groove region (3); When the first aspect ratio exceeds a specified threshold, depositing a first filling layer (31) corresponding to the first aspect ratio in the first groove region (3) so that the component (1) and the first filling layer (31) enclose to form a second groove region (4); wherein, the size of the first filling layer (31) is determined according to a specified ratio of the first aspect ratio, and the first aspect ratio and the specified ratio are inversely proportional; Obtaining a second aspect ratio corresponding to the second groove region (4); When the second aspect ratio does not exceed the specified threshold, depositing a first covering layer (33) so that the first covering layer (33) and the first filling layer (31) completely cover the component (1).

2. The method according to claim 1, wherein Before depositing the first filling layer (31) corresponding to the first aspect ratio in the first groove region (3), the method further includes: Depositing a protective layer (5) above the component (1), and the protective layer (5) is used to protect the component (1).

3. The method according to claim 2, wherein The depositing the first filling layer (31) corresponding to the first aspect ratio in the first groove region (3) so that the component (1) and the first filling layer (31) enclose to form a second groove region (4) includes: Depositing a second covering layer (34) above the component (1), and the second covering layer (34) is used to cover the component (1) and the substrate layer (2); Depositing a third covering layer (35) on the second covering layer (34), and the third covering layer (35) is used to cover the second covering layer (34); Performing a re-etching on the third covering layer (35) so that the third covering layer (35) forms a hard mask (37) in the first groove; Performing a re-etching on the second covering layer (34), and the second covering layer (34) in the first groove forms a first filling layer (31) under the protection of the hard mask (37); Removing the hard mask (37) so that the component (1) and the first filling layer (31) enclose to form the second groove region (4).

4. The method according to claim 3, characterized in that, The performing a re-etching on the second covering layer (34) includes: Obtaining a first etching condition of the second covering layer (34); Performing a re-etching on the second covering layer (34) according to the first etching condition.

5. The method according to claim 4, wherein The performing a re-etching on the third covering layer (35) includes: Obtaining a second etching condition corresponding to the third covering layer (35); Performing a re-etching on the second covering layer (34) according to the second etching condition, where the second etching condition is different from the first etching condition.

6. The method according to claim 2, wherein Depositing a first filling layer (31) corresponding to a first aspect ratio in the first groove region (3) so that the element (1) and the first filling layer (31) enclose a second groove region (4), includes: Depositing a fourth covering layer (36) above the element (1), the fourth covering layer (36) being used to cover the element (1) and the substrate layer (2); Performing an etch-back on the fourth covering layer (36) so that the fourth covering layer (36) forms a first filling layer (31) with a specific shape in the first groove; The element (1) and the first filling layer (31) enclose to form the second groove region (4).

7. The method according to claim 1, characterized in that, After obtaining a second aspect ratio corresponding to the second groove region (4), the method further includes: When the second aspect ratio exceeds a specified threshold, depositing a second filling layer (32) corresponding to the first aspect ratio in the second groove region (4) so that the element (1) and the second filling layer (32) enclose a third groove region (41); Obtaining a third aspect ratio corresponding to the third groove region (41); When the third aspect ratio does not exceed the specified threshold, depositing a first covering layer (33) so that the first covering layer (33) and the first filling layer (31) completely cover the element (1).

8. The method according to claim 5, wherein The protection layer (5) corresponds to a third etching condition, and the third etching condition is different from the first etching condition; the third etching condition is different from the second etching condition.

9. The method according to claim 3, wherein The first covering layer (33), the second covering layer (34) and the fourth covering layer (36) are first dielectric material layers; the third covering layer (35) is a second dielectric material layer; the protection layer (5) is a third dielectric material layer.

10. A device, characterized in that, The device includes a substrate layer (2), an element (1) and an isolation unit; There are at least two elements (1), the elements (1) are connected to the substrate layer (2), and a first groove region (3) is formed by enclosing between two adjacent elements (1) and the substrate layer (2); the first groove region (3) has a first aspect ratio; The isolation unit includes a first filling layer (31) and a first covering layer (33), the first filling layer (31) is located in the first groove region (3), and a second groove region (4) is formed between the first filling layer (31) and the element (1); wherein, the size of the first filling layer (31) is determined according to a specified ratio of the first aspect ratio, and the first aspect ratio and the specified ratio are inversely proportional; The first covering layer (33) is connected to the first filling layer (31) and is used to fill the second groove region (4), and the first covering layer (33) and the first filling layer (31) completely cover the element (1).

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