A device for monitoring the junction temperature during aging of power supply devices
By designing an integrated power supply device junction temperature monitoring device, the problem of junction temperature monitoring and control in power supply device rigorous test is solved, and accurate temperature monitoring and protection functions are achieved, which improves the effectiveness of the test and the reliability of the device.
Patent Information
- Application Number
- CN202111459528.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-12-02
- Publication Date
- 2025-05-02
- Estimated Expiration
- 2041-12-02
AI Technical Summary
In the aging test of power supply device, it is difficult for the prior art to effectively monitor and control the junction temperature of the device, resulting in potential defects not being excited or device overstress damage.
A power supply device-like temperature monitoring device is designed, using a temperature measuring sensor unit, a driving circuit unit, a temperature display unit, an over-temperature alarm processing unit and a system protection unit. The temperature measurement is ensured through the spring propulsion and locking mechanism, and it also has an over-temperature acousto-light alarm and automatic cutting heating function.
Accurate monitoring and control of junction temperature during aging power supply device is achieved, avoiding the problem of overtemperature or overcooling of the device, ensuring the effectiveness of the test and the safety of the device.
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Figure CN114236417B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a device for monitoring junction temperature during aging of power supply devices, in particular to a device junction temperature monitoring device in aging test and reliability test of power supply devices, belonging to the field of integrated circuit aging test. Background Art
[0002] With the development of aerospace model missions, higher requirements are placed on the quality of components used in the models. Especially with the development of deep space exploration projects represented by the Mars rover, the quality of components has once again attracted people's attention with unprecedented importance. Power devices are called the "heart" of model units and subsystems. Their importance is self-evident. As the most basic unit of electronic equipment, the failure of a power device can even cause the entire subsystem to be paralyzed, leading to the failure of the entire launch mission. Therefore, the quality of power devices has become one of the core tasks of component quality assurance.
[0003] The aging test of power supply devices is one of the key tests in its quality assurance test. It mainly applies electrical stress and thermal stress to power supply devices to accelerate the occurrence of potential defects and failures inside the devices, and eliminate early failure devices to achieve the purpose of improving reliability. Different device types and different aging test circuits during the aging test of power supply devices will cause different temperature rises in the devices. During the aging test, if the test temperature is too low and the thermoelectric comprehensive stress applied to the device is insufficient, the potential defects cannot be stimulated, and the early failure devices cannot be effectively eliminated. If the applied thermoelectric comprehensive stress exceeds the limit of the device, it will cause the device to be overstressed, causing the device to be burned or causing potential damage to the device. Therefore, during the aging process of power supply devices, it is necessary to monitor whether the junction temperature of the device is within a reasonable range. Based on this situation, it is necessary to design a device for monitoring the junction temperature of the device, collect and control the aging junction temperature data of the power supply device, so as to conduct effective aging tests and improve the quality of aerospace power supply devices. Summary of the invention
[0004] The technical problem to be solved by the present invention is: to overcome the shortcomings of the prior art and provide a power supply device aging junction temperature monitoring device, wherein a spring is added to the temperature collection part to ensure that the temperature collection part is tightly connected and the temperature measurement is accurate; the device has a wide temperature measurement range, covering the operating temperature of power supply devices, up to 150°C; the device has an over-temperature sound and light alarm function; the device has an over-temperature device heating shutdown function; the device has an over-voltage and over-current protection function.
[0005] The purpose of the present invention is achieved through the following technical solutions:
[0006] A power device aging junction temperature monitoring device, comprising a temperature sensor unit, a drive circuit unit, a temperature display unit, an over-temperature alarm processing unit, a power supply and signal bus, a central control unit, a system power supply, and a system protection unit;
[0007] The temperature sensor unit is used to collect the temperature of the device under test; the driving circuit unit is used to provide the driving voltage and collection command to the temperature sensor unit, and at the same time provide the driving voltage and the necessary conversion signal to the temperature display unit; the temperature display unit is used to display the collected temperature signal through the LED; the over-temperature alarm processing unit is used to determine whether the detected temperature value is within a reasonable range based on the detected temperature value combined with the temperature upper limit set by the user. If it is abnormal, an audible and visual alarm will be generated, and at the same time, the heating function of the high-temperature oven will be turned off according to the user's preset to protect the device under test; the power supply and signal bus is used to provide working power and signal transmission channels for each unit; the central control unit is used to receive feedback signals from other units, and at the same time send control signals to each unit to coordinate the work of each unit; the system power supply unit is used to provide the total power supply; the system protection unit includes a system overvoltage and overcurrent protection submodule, which is used to monitor the working voltage and current of each unit to avoid abnormal system operation caused by overvoltage and overcurrent in each unit.
[0008] In one embodiment of the present invention, the temperature sensor unit uses an integrated circuit AD590, a mounting hole is provided at the bottom of the aging device socket fixture, and the TO52 packaged integrated circuit AD590 is embedded. A spring and a locking mechanism for pushing the integrated circuit AD590 to make the integrated circuit AD590 in close contact with the device under test are installed at the bottom of the TO52 packaged integrated circuit AD590. At the same time, the external leads of the integrated circuit AD590 are passed through the aperture of the spring and connected to the driving circuit unit outside the high-temperature oven. The external leads of the integrated circuit AD590 are protected by high-temperature resistant insulating materials.
[0009] In one embodiment of the present invention, the temperature display unit includes a chip AD9058, a signal driver, and an LED display module;
[0010] The voltage V1 of the driving circuit unit is transmitted to the chip AD9058. The chip AD9058 is a dual 8-bit analog-to-digital converter. Through the TTL level output, the chip AD9058 converts the input analog signal into a digital signal; the central control unit sends a control signal to the chip AD9058 to convert the voltage V1 corresponding to the input temperature into a digital quantity DOUT corresponding to its voltage value. The central control unit transmits the digital quantity DOUT to the signal driver. The signal driver adopts the SG2023 current drive matrix chip to enhance the output load driving capability. The converted and enhanced signal is transmitted to the LED display module. The LED display module adopts a four-digit eight-segment common cathode LED display with a decimal point to display the acquired temperature value.
[0011] In one embodiment of the present invention, the over-temperature alarm processing unit includes a comparator; when the voltage V1 corresponding to the actually detected temperature exceeds the voltage V2 preset by the user, the comparator will generate a valid signal, which activates the sound and light alarm device, generates a sound and light alarm signal, notifies the test personnel, and at the same time turns off the oven heating switch by controlling the relay to prevent the device from being burned due to overheating.
[0012] In one embodiment of the present invention, the system protection unit includes two parts: overvoltage protection and overtemperature protection. The overvoltage protection adopts a feedback voltage monitoring module. When the power supply of each unit exceeds the voltage set by the system, the power supply monitoring module will generate an overvoltage signal. The overvoltage signal cuts off the signal and power supply voltage of the overvoltage part through the control relay to prevent the units from burning due to abnormal power supply voltage; the overcurrent protection system is equipped with a temperature monitoring unit in each unit to monitor the temperature changes in real time. When the temperature of the monitoring unit exceeds the temperature set by the system, the overcurrent protection system will receive an over-temperature alarm signal, and cut off the input signal and power supply of the temperature-exceeding unit through the control relay to prevent the units from burning due to abnormal temperature-exceeding.
[0013] In one embodiment of the present invention, the driving circuit unit includes a reference voltage V0 generating unit, a temperature sampling control unit and a sampling temperature conversion unit; the reference voltage V0 generating unit is composed of a power supply V2, a device U1, a device U2, a resistor R1, a resistor R2, a resistor R3, and a resistor RP, the temperature sampling control unit is composed of a device U3, a device U5, and a device U6, and the sampling temperature conversion unit is composed of a device U4, a resistor R4, a resistor R5, a resistor R6, and a resistor R7; the power supply V2 is a +10V DC power supply, U1 is a device CW78L05T, U2 is a temperature sensor AD590, U3 is a plurality of groups of ADG526 as an analog switch matrix group, U4 is an operational amplifier OP07AJ, U5 is a central control unit, U6 is a counter, R1, R2, R3, R4, R5, R6, R7, are all resistors, and Rp is an adjustable resistor;
[0014] The power supply V2 provides power to the devices U1 and U2. The negative end of U2 is connected to R3 and then to GND. The temperature of the temperature sensor U2 will cause a current of 1uA / ℃ to be generated at its negative end, thereby generating a voltage of 10mV / ℃ at the R3 resistor. The U5 central control unit and the U6 counter unit provide address control signals to the U3 analog switch matrix group. The U3 analog switch matrix group is used to control the device station for collecting temperature. The purpose of controlling the temperature collection and display of different stations is achieved through the central control unit U5 and the counter U6. The U5 central controller collects the temperature of the corresponding position by sending an address signal. The U6 counter is used for cyclic timing to collect and display the entire collection area cyclically; U1 outputs a precise 5V voltage signal, which is connected to GND through R1, R2, and Rp. The adjustable resistor Rp is adjusted to generate a 2.732V reference voltage at V0; the collected temperature is converted into a corresponding voltage signal, which is connected to the input of the U4 operational amplifier through R5 and R6. The reference voltage V0 is connected to the input of the U4 operational amplifier through the resistor R4.
[0015] Compared with the prior art, the present invention has the following beneficial effects:
[0016] (1) Comparison between the present invention and the prior art The newly designed temperature measuring device adopts the installation method of embedding the temperature sensor in the fixture under test. Compared with the existing thermal conductive glue or high temperature tape bonding method, it does not damage the device under test, ensuring non-destructive testing of the device;
[0017] (2) The present invention compares the existing technology with the temperature measuring device. The temperature sensor of the newly designed temperature measuring device is installed at the center of the bottom of the fixture of the device under test. This position is the heat concentration area of the device, and the temperature measurement is more accurate. However, the temperature measurement area of the existing temperature measurement technology is located on the upper surface of the device, which is a non-heat concentration area, and the temperature measurement error is large.
[0018] (3) Compared with the prior art, the newly designed temperature measuring device of the present invention adopts a spring to push and lock the temperature measuring part, so that the temperature measuring part is seamlessly and tightly connected with the device under test, and the temperature measurement is more accurate;
[0019] (4) Compared with the prior art, the newly designed temperature measuring device of the present invention has the functions of over-temperature sound and light alarm and automatic heating cut-off switch to protect the aged device. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 It is a schematic diagram of the composition of the device of the present invention.
[0021] Figure 2 This is a schematic diagram of the temperature sensor component structure.
[0022] Figure 3 Schematic diagram of the driving circuit unit.
[0023] Figure 4 This is the schematic diagram of the temperature display unit.
[0024] Figure 5 This is a schematic diagram of the over-temperature alarm processing unit.
[0025] Figure 6 This is a schematic diagram of the structure of the aging junction temperature monitoring device. DETAILED DESCRIPTION
[0026] To make the objectives, technical solutions and advantages of the present invention more clear, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.
[0027] A device for monitoring the junction temperature of power device during aging is mainly composed of a temperature sensor embedded in a fixture for aging power device and a peripheral auxiliary circuit outside a high temperature aging box. The temperature sensor placed inside the fixture of the device under test accurately measures the shell temperature of the device under test. The peripheral auxiliary circuit combines the measured device shell temperature with the actual working conditions of the device under test and the device thermal resistance parameters to calculate the actual junction temperature of the device under test, and judges whether the measured actual junction temperature of the device is reasonable based on the range of the device junction temperature. The measurement results are displayed at all times. If over-temperature occurs during the test, the test personnel will be reminded to handle it in the form of obvious sound and light alarms. The heating function of the test box is turned off according to the preset settings to protect the test device.
[0028] A power device aging junction temperature monitoring device, including a temperature sensor unit embedded in the power device aging fixture, a drive circuit unit outside the aging high temperature box, a temperature display unit, an over-temperature alarm processing unit, a power supply and signal bus, a central control unit, a system power supply and system protection, etc. The schematic diagram of its composition is shown in FIG. Figure 1 shown.
[0029] The function of the temperature sensor is to collect the temperature of the device under test. The function of the driving circuit is to provide the driving voltage and acquisition command to the temperature sensor part, and to provide the driving voltage and necessary conversion signal to the temperature display part. The temperature display part converts the collected temperature signal and displays it through LED. The function of the over-temperature alarm processing unit is to judge whether the detected temperature value is within a reasonable range based on the detected temperature value combined with the temperature upper limit set by the user. If it is abnormal, an audible and visual alarm will be generated. At the same time, the heating function of the high-temperature oven can be turned off according to the user's preset to protect the test device. The power supply and signal bus is a bridge that provides working power and signal transmission for each sub-unit, and plays the role of transmitting power and signals. The central control unit receives feedback signals from each part, and sends control signals to each unit to coordinate the work of each unit. The function of the system power supply unit is to provide working power to each module unit. The system protection module includes the system overvoltage and overcurrent protection submodule, which mainly monitors the working voltage and current of each module in the system to avoid abnormal system operation caused by overvoltage and overcurrent.
[0030] The temperature sensor is an integrated circuit AD590. A mounting hole is provided at the bottom of the aging device socket fixture for embedding the TO52 packaged AD590 device. A spring and a locking mechanism are installed at the bottom of the TO52 packaged AD590 device to push the AD590 to make the AD590 device under test in close contact. At the same time, the outer lead of the AD590 device is passed through the aperture of the spring and connected to the drive circuit part outside the high-temperature oven. The outer lead of the AD590 device is protected by high-temperature resistant insulating materials to avoid short circuits between the outer leads or between the outer leads and other objects. The schematic diagram of the temperature sensor component structure is shown in the figure. Figure 2 shown.
[0031] The driving circuit consists of three parts, namely the reference voltage V0 generating unit, the temperature sampling control unit and the sampling temperature conversion unit. The reference voltage V0 generating unit consists of power supply V2, device U1, device U2, resistor R1, resistor R2, resistor R3, and resistor RP. The temperature sampling control unit consists of device U3, device U5, and device U6. The sampling temperature conversion unit consists of device U4, resistor R4, resistor R5, resistor R6, and resistor R7. Power supply V2 is a +10V DC power supply, U1 is a device CW78L05T, U2 is a temperature sensor AD590, U3 is a plurality of groups of ADG526 analog switch matrix groups, U4 is an operational amplifier OP07AJ, U5 is a central control unit, U6 is a counter, R1 is a 1.8kΩ resistor, R2 is a 2.2kΩ resistor, R3, R4, R5, R6, R7, are all 10kΩ resistors, and Rp is an adjustable resistor. The power supply V2 provides power to the devices U1 and U2. The negative terminal (-) of U2 is connected to R3 and then to GND. The temperature of the temperature sensor U2 will cause a current of 1uA / ℃ at its negative terminal, thereby generating a voltage of 10mV / ℃ at the R3 resistor. The U5 central control unit and the U6 counter unit provide address control signals to the U3 analog switch matrix group. The U3 analog switch matrix group is used to control the device station for collecting temperature. The central control unit U5 and the counter U6 are used to control the temperature collection and display of different stations. The U5 central controller collects the temperature of the corresponding position by sending address signals. The U6 counter is used to collect and display the entire collection area in a cyclic timing cycle. U1 outputs a precise 5V voltage signal, and its output is connected to GND through R1, R2, and Rp. By adjusting the adjustable resistor Rp, it is used to generate a 2.732V reference voltage at V0. The collected temperature is converted into a corresponding voltage signal, which is connected to the (+) input terminal of the U4 operational amplifier through R5 and R6. The reference voltage V0 is connected to the (-) input terminal of the U4 operational amplifier through the resistor R4. R7 is the negative feedback resistor of the operational amplifier. V1 is the voltage signal corresponding to the standard Celsius temperature after the output conversion. When the normal temperature detection temperature is room temperature 25℃, V1 outputs 0.25V, and when the detection temperature is 150℃, V1 outputs 1.5V. The schematic diagram of the drive circuit unit is as follows Figure 3 shown.
[0032] The temperature display unit directly displays the temperature sampling values obtained in the early stage through LED, and the test personnel can directly read the data for judgment.
[0033] The voltage V1 of the driving circuit unit is transmitted to the chip AD9058. AD9058 is a dual 8-bit analog-to-digital converter with TTL level output. It can convert the input analog signal into a digital signal. The central control unit sends a control signal to AD9058 to convert the voltage V1 corresponding to the input temperature into a digital quantity DOUT corresponding to its voltage value. The central control unit transmits the DOUT signal to the signal driver according to the program control. The signal driver adopts the SG2023 current drive matrix chip to enhance the output load driving capability. The converted and enhanced signal is transmitted to the LED display module. The LED display module adopts a four-digit eight-segment common cathode LED display with a decimal point to display the acquired temperature value. The schematic diagram of the temperature display unit is shown in the figure below. Figure 4 shown.
[0034] The over-temperature alarm processing unit compares the alarm warning temperature set by the user with the actual measured temperature. If the actual temperature exceeds the warning temperature, it will perform corresponding processing according to the user's preset settings.
[0035] The user can preset the alarm temperature voltage V2 according to the actual working conditions. When the preset alarm temperature is 50 degrees, V2 can be set to 0.50V, when the preset alarm temperature is 100 degrees, V2 can be set to 1.0V, when the preset alarm temperature is 125 degrees, V2 can be set to 1.25V, and so on. The preset voltage can be generated by the user dividing the system voltage and adjusting the potentiometer, or it can be provided externally by the user. When the voltage V1 corresponding to the actual detected temperature exceeds the user-preset voltage V2, the comparator will generate a valid signal, which can activate the sound and light alarm device, generate a sound and light alarm signal, notify the test personnel, and at the same time turn off the oven heating switch by controlling the relay to prevent the device from being burned due to overheating. The schematic diagram of the over-temperature alarm processing unit is shown in the figure. Figure 5 shown.
[0036] The central control unit is the control center of the whole system, sending control signals to each unit, receiving feedback signals from each unit, and coordinating the normal operation of each system. The core of the central control unit is the microcontroller C8051F040, which is a fully integrated mixed-signal system-on-chip MCU with 64 digital I / O pins, an 8051 microcontroller core, 4k+256 bytes of memory, 64KFLASH, a CAN2.0B controller, 8-bit, 12-bit A / DC, 2 12-bit D / AC, etc. The device has an on-chip VDD monitor, watchdog timer and clock oscillator, and is an independently working system-on-chip.
[0037] The system protection unit mainly includes two parts: overvoltage protection and overtemperature protection. The overvoltage protection adopts a feedback voltage monitoring module. When the power supply of each module exceeds the voltage set by the system, the power monitoring part will generate an overvoltage signal. The overvoltage signal cuts off the signal and power supply voltage of the overvoltage part through the control relay to prevent the system from burning out due to abnormal power supply voltage in each module. The overcurrent protection system is similar to the overvoltage protection system. A temperature monitoring unit is set at the key part of each module to monitor the temperature changes in real time. When the temperature of the monitoring unit exceeds the temperature set by the system, the system control unit will receive an over-temperature alarm signal. The system cuts off the input signal and power supply of the over-temperature unit through the control relay to prevent the system from burning out due to abnormal temperature.
[0038] According to the system requirements and device module selection design, the system internal power supply requires the following system voltages: 3.3V, -5.0V, 5.0V, 10V, 12V, 15V, -15V, etc. The system voltage is generated by LDO and various groups of DC regulators.
[0039] The schematic diagram of the aging junction temperature monitoring device is as follows: Figure 6 shown.
[0040] The contents not described in detail in the specification of the present invention belong to the common knowledge of those skilled in the art.
[0041] Although the present invention has been disclosed as above in the form of a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art may make possible changes and modifications to the technical solution of the present invention by using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention shall fall within the protection scope of the technical solution of the present invention.
Claims
1. A device for monitoring the junction temperature of a power device during aging, characterized in that: It includes a temperature sensor unit, a drive circuit unit, a temperature display unit, an over-temperature alarm processing unit, a power supply and signal bus, a central control unit, a system power supply, and a system protection unit; The temperature sensor unit is used to collect the temperature of the device under test; the driving circuit unit is used to provide the driving voltage and collection command to the temperature sensor unit, and at the same time provide the driving voltage and the necessary conversion signal to the temperature display unit; the temperature display unit is used to display the collected temperature signal through the LED; the over-temperature alarm processing unit is used to judge whether the detected temperature value is within a reasonable range based on the detected temperature value combined with the temperature upper limit set by the user. If it is abnormal, an audible and visual alarm will be generated, and at the same time, the heating function of the high-temperature oven will be turned off according to the user's preset to protect the device under test; the power supply and signal bus is used to provide working power and signal transmission channels for each unit; the central control unit is used to receive feedback signals from other units, and at the same time send control signals to each unit to coordinate the work of each unit; the system power supply unit is used to provide the total power supply; the system protection unit includes a system overvoltage and overcurrent protection submodule, which is used to monitor the working voltage and current of each unit to avoid abnormal system operation caused by overvoltage and overcurrent in each unit; The driving circuit unit includes a reference voltage V0 generating unit, a temperature sampling control unit and a sampling temperature conversion unit; the reference voltage V0 generating unit is composed of a power supply V2, a device U1, a device U2, a resistor R1, a resistor R2, a resistor R3, and a resistor RP; the temperature sampling control unit is composed of a device U3, a device U5, and a device U6; the sampling temperature conversion unit is composed of a device U4, a resistor R4, a resistor R5, a resistor R6, and a resistor R7; the power supply V2 is a +10V DC power supply, U1 is a device CW78L05T, U2 is a temperature sensor AD590, U3 is a plurality of groups of ADG526 as an analog switch matrix group, U4 is an operational amplifier OP07AJ, U5 is a central control unit, U6 is a counter, R1, R2, R3, R4, R5, R6, R7, are all resistors, and Rp is an adjustable resistor; The power supply V2 provides power to the devices U1 and U2. The negative end of U2 is connected to R3 and then to GND. The temperature of the temperature sensor U2 will cause a current of 1uA / ℃ to be generated at its negative end, thereby generating a voltage of 10mV / ℃ at the R3 resistor. The U5 central control unit and the U6 counter unit provide address control signals to the U3 analog switch matrix group. The U3 analog switch matrix group is used to control the device stations for collecting temperature. The purpose of controlling the temperature collection and display at different stations is achieved through the central control unit U5 and the counter U6. The U5 central controller collects the temperature at the corresponding position by sending the address signal. The U6 counter is used to cyclically collect and display the entire collection area in a cyclic timing manner. U1 outputs a precise 5V voltage signal, which is connected to GND through R1, R2, and Rp. The adjustable resistor Rp is adjusted to generate a 2.732V reference voltage at V0. The collected temperature is converted into a corresponding voltage signal, which is connected to the input of the U4 operational amplifier through R5 and R6. The reference voltage V0 is connected to the input of the U4 operational amplifier through the resistor R4. The temperature sensor unit uses integrated circuit AD590. A mounting hole is set at the bottom of the aging device socket fixture, and the TO52 packaged integrated circuit AD590 is embedded. A spring and a locking mechanism for pushing the integrated circuit AD590 to make the integrated circuit AD590 in close contact with the device under test are installed at the bottom of the TO52 packaged integrated circuit AD590. At the same time, the external leads of the integrated circuit AD590 are passed through the aperture of the spring and connected to the driving circuit unit outside the high-temperature oven. The external leads of the integrated circuit AD590 are protected by high-temperature resistant insulating materials.
2. The power device aging junction temperature monitoring device according to claim 1, characterized in that: The temperature display unit includes chip AD9058, signal driver, and LED display module; The voltage V1 corresponding to the input temperature is transmitted to the chip AD9058. The chip AD9058 is a dual 8-bit analog-to-digital converter. Through the TTL level output, the chip AD9058 converts the input analog signal into a digital signal; the central control unit sends a control signal to the chip AD9058 to convert the voltage V1 corresponding to the input temperature into a digital quantity DOUT corresponding to its voltage value. The central control unit transmits the digital quantity DOUT to the signal driver. The signal driver adopts the SG2023 current drive matrix chip to enhance the output load driving capability. The converted and enhanced signal is transmitted to the LED display module. The LED display module adopts a four-digit eight-segment common cathode LED display with a decimal point to display the acquired temperature value.
3. The power device aging junction temperature monitoring device according to claim 1, characterized in that: The over-temperature alarm processing unit includes a comparator; when the voltage V1 corresponding to the actual detected temperature exceeds the voltage V2 preset by the user, the comparator will generate a valid signal, which activates the sound and light alarm device, generates a sound and light alarm signal, notifies the test personnel, and at the same time turns off the oven heating switch by controlling the relay to prevent the device from being burned due to overheating.
4. The power device aging junction temperature monitoring device according to claim 1, characterized in that: The system protection unit consists of two parts: overvoltage protection and overtemperature protection. The overvoltage protection adopts a feedback voltage monitoring module. When the power supply of each unit exceeds the voltage set by the system, the power monitoring module will generate an overvoltage signal. The overvoltage signal cuts off the signal and power supply voltage of the overvoltage part through the control relay to prevent the units from burning due to abnormal power supply voltage; the overcurrent protection system is equipped with a temperature monitoring unit in each unit to monitor the temperature changes in real time. When the temperature of the monitoring unit exceeds the temperature set by the system, the overcurrent protection system will receive an over-temperature alarm signal, and cut off the input signal and power supply of the temperature-exceeding unit through the control relay to prevent the units from burning due to abnormal temperature-exceeding.
Citation Information
Patent Citations
Aerospace component aging test device monitoring system and method
CN112362991A