A MEMS infrared light source and a manufacturing method thereof

Abstract

The present invention belongs to the field of infrared light sources, and particularly relates to a MEMS infrared light source and a manufacturing method thereof. The MEMS infrared light source introduces a reflective layer with high reflectivity for infrared radiation on the heating electrode layer and the back of the supporting material (located in the substrate cavity area), so as to reflect back the infrared radiation energy radiated by the heating electrode layer to the substrate cavity part via the supporting film, and radiate upward through the heating electrode layer, thereby enhancing the infrared radiation energy that can be used by the infrared sensor, greatly improving the photoelectric conversion efficiency of the MEMS infrared light source and reducing the heating power consumption; at the same time, an ultra-thin (thickness not greater than 1 micron) infrared emission layer is introduced, while ensuring that the MEMS infrared light source has a high infrared emission capability, the thermal mass of the heating electrode layer is greatly reduced, the modulation frequency of the MEMS infrared light source is improved, and the heating power consumption is further reduced.

Description

Technical Field

[0001] The invention belongs to the field of infrared light sources, and in particular relates to a MEMS infrared light source and a manufacturing method thereof. Background Art

[0002] Infrared sensing technology has been widely used in the fields of air quality detection, temperature monitoring, industrial process control, space monitoring, information communication, medicine and military. Infrared light source is an important component of infrared sensing technology, and the commonly used luminous wavelengths are 3-5 microns and 8-14 microns. Infrared light sources mainly include infrared light-emitting diodes, quantum cascade infrared lasers and thermal radiation infrared light sources. Traditional thermal radiation infrared light sources, such as incandescent lamps, have low electro-optical conversion efficiency and poor modulation characteristics; infrared diodes with wavelengths of 3-5 microns have low luminous efficiency and low output power, which limits their application; quantum cascade infrared lasers can emit high-intensity narrow-band infrared lasers, but their efficiency is not high and their manufacturing cost is high. The MEMS infrared light source made using micro-electromechanical system (MEMS) technology is a new type of thermal radiation infrared light source with the characteristics of high electro-optical conversion efficiency, small size and low energy consumption. At the same time, the spectrum can easily cover the range of 2-20 microns and has a faster modulation frequency. It has been widely used in the field of infrared sensing and has become a trending technology for infrared light sources.

[0003] Conventional structure of MEMS infrared light source such as Figure 1 As shown, there is a substrate, a supporting film layer is arranged on the substrate, the supporting film layer and the substrate are connected by a four-side fixed support structure, and a heating electrode layer is arranged on the supporting film. Joule heat is generated by energizing the heating electrode layer, so that the heating electrode layer is heated to a specific temperature (determined according to the required infrared emission wavelength and radiation amount), thereby generating infrared radiation. In order to make the MEMS infrared light source give full play to the characteristics of high electro-optical conversion efficiency, small size, low energy consumption and fast modulation frequency, the following issues usually need to be considered when designing a MEMS infrared light source:

[0004] (1) The infrared emitting material of the MEMS infrared light source (which can be the heating electrode layer itself, or a combination of the heating electrode layer and other materials with high infrared emissivity located on the surface of the heating electrode layer) should have a volume-to-surface ratio as small as possible. Given a given surface area (the appropriate surface area determined after balancing the increase in the emission area and the reduction in the volume of the MEMS light source), this means that a thinner infrared emitting material is required, which is equivalent to reducing the thermal mass of the infrared emitting material, thereby reducing heating power consumption and improving electro-optical conversion efficiency and modulation frequency.

[0005] (2) MEMS infrared light sources mainly dissipate heat through two ways: heat conduction and infrared radiation. Heat conduction is the heat transfer from the heating electrode layer through the substrate. This part of heat transfer should be reduced as much as possible to improve the electro-optical conversion efficiency of the MEMS infrared light source and reduce heating power consumption. Infrared radiation is the core of the work of the MEMS infrared light source and needs to be strengthened. Therefore, it is necessary to significantly reduce the thermal conductivity of the heating electrode layer, such as Figure 1 As shown, the substrate under the heating electrode layer is usually hollowed out to reduce the heat conduction of the substrate; and the infrared radiation can be enhanced by selecting a material with high emissivity to make the heating electrode layer or adding an infrared emission layer with higher infrared emissivity on the surface of the heating electrode layer.

[0006] (3) The infrared radiation of the MEMS infrared light source is mainly emitted from two directions: one is radiated outward from the top of the heating electrode layer. This part of the infrared radiation can be used by the infrared sensor and needs to be strengthened; the other is radiated from the heating electrode layer through the supporting film to the hollow part of the substrate. This part of the infrared radiation will be absorbed by the packaging material and substrate after the MEMS infrared light source is packaged and cannot be effectively used. It is a waste of energy and needs to be reduced as much as possible or even eliminated.

[0007] (4) Other factors include that the heating electrode layer should have good thermal stability and mechanical parameters, good chemical stability at high temperatures, low heat capacity, high infrared emissivity, etc. At the same time, the structural characteristics of the entire MEMS infrared light source and the stress matching between various materials must also be considered.

[0008] Based on the above design considerations, the existing MEMS infrared light source has made great progress. For example, the thermal conductivity of the MEMS infrared light source has been greatly reduced through substrate hollowing technology, the electro-optical conversion efficiency of the MEMS infrared light source has been improved, and the heating power consumption has been reduced. The infrared emission capability is improved by introducing materials or microstructures with high infrared emissivity above the heating electrode layer, thereby reducing the heating power consumption of the MEMS infrared light source. At the same time, there is also a good understanding of the selection of the heating electrode layer. However, there are still some problems with the existing MEMS infrared light source:

[0009] First, the infrared emissivity of the commonly used heating electrode layer at working temperature is relatively low, and an additional infrared emission layer needs to be set on it to improve the infrared emission capability of the MEMS infrared light source. Commonly used infrared emission layers include platinum black, gold black, silver black, black silicon, photonic crystals, etc. These emission layers can indeed greatly improve the infrared emission capability of the MEMS infrared light source, but they usually have a thickness of several microns to tens of microns, which greatly increases the thermal mass of the heating electrode layer, increases the heating power consumption of the MEMS infrared light source, and reduces the modulation frequency. In addition, the preparation process of these infrared emission layers is complex and costly, which is not conducive to reducing the cost of the MEMS infrared light source.

[0010] Second, the existing MEMS infrared light source has not yet effectively solved the problem of utilizing the infrared energy radiated from the heating electrode layer through the supporting film to the hollowed-out part of the substrate, resulting in a huge waste of infrared radiation energy and increasing the heating power consumption of the MEMS infrared light source. Summary of the invention

[0011] In view of the above problems in the prior art, the present invention provides a MEMS infrared light source and a manufacturing method thereof. On the basis of the existing MEMS infrared light source, a reflective layer with high reflectivity for infrared radiation is introduced on the back of the heating electrode layer and the supporting material (located in the substrate cavity area), so that the infrared radiation energy radiated by the heating electrode layer to the substrate cavity part through the supporting film is reflected back, and radiated upward through the heating electrode layer, thereby enhancing the infrared radiation energy that can be used by the infrared sensor, greatly improving the photoelectric conversion efficiency of the MEMS infrared light source and reducing the heating power consumption; at the same time, an ultra-thin (thickness not greater than 1 micron) infrared emission layer is introduced, while ensuring that the MEMS infrared light source has a high infrared emission capability, the thermal mass of the heating electrode layer is greatly reduced, the modulation frequency of the MEMS infrared light source is increased and the heating power consumption is further reduced. The above two problems existing in the existing MEMS infrared light source are solved.

[0012] The object of the present invention is achieved in that:

[0013] A MEMS infrared light source comprises a substrate, a supporting film layer, a heating electrode layer, an isolating layer, a heating electrode pad, an infrared emitting layer, a protective layer and a reflecting layer, wherein the substrate comprises a cavity structure, the supporting film layer is arranged on the substrate having the cavity structure, is connected to the substrate by a four-side fixed support structure, and forms a suspension area above the cavity structure, a heating electrode layer is arranged above the supporting film layer, heating electrode pads are arranged on both sides of the heating electrode layer outside the suspension area, the heating electrode pads are electrically connected to the heating electrode layer, an isolating layer is arranged in the area above the heating electrode layer except for the heating electrode pads, an infrared emitting layer is arranged on the corresponding isolating layer above the suspension area, the protective layer is located on the upper surfaces of the infrared emitting layer, the infrared electrode layer and the supporting film layer except for the heating electrode pads, the reflecting layer is located in the cavity structure, and is connected to the substrate on the side of the cavity structure and the supporting film layer on the top surface of the cavity structure.

[0014] Furthermore, the reflective layer is a thin film with high reflectivity to infrared rays in the wavelength range of 2-14 microns, and is Ag, Au, Cu, Al or a dielectric film Bragg reflective layer.

[0015] Furthermore, the infrared emitting layer is a material with a rough surface, a thickness in the range of 50-1000nm and a high infrared emissivity, such as NiCr alloy, TiN, TiAlN, amorphous carbon, SiC, NiCrO compound, ZrO2 , HfO 2 ,La 1-x Ca x CrO 3 (0≤x≤0.5) or carbon nanotubes.

[0016] Furthermore, the heating electrode layer is made of Pt, Mo, NiCr alloy, polysilicon, SiC, Cu, W, HfB 2 , PtSi and SnO 2 In one embodiment, a Ti layer, a Cr layer or a Ni layer with a thickness of 1-200 nm can be introduced between the heating electrode layer and the supporting film layer to increase the adhesion between the heating electrode layer and the supporting film layer.

[0017] Furthermore, the supporting film layer is a multilayer composite film structure composed of silicon oxide, silicon nitride or silicon nitride and silicon oxide.

[0018] Furthermore, the isolation layer is one or a combination of silicon oxide, silicon nitride, and aluminum oxide.

[0019] Furthermore, the protective layer is one or a combination of silicon oxide, silicon nitride, aluminum oxide, and hafnium oxide.

[0020] Furthermore, the heating electrode pad is one of AlSi alloy, Au, Al, NiCr alloy and NiV alloy.

[0021] Furthermore, the substrate is single crystal silicon or quartz.

[0022] A method for manufacturing a MEMS infrared light source comprises the following steps:

[0023] (1) providing a substrate, depositing a supporting film layer on the substrate,

[0024] (2) forming a heating electrode layer on the supporting film layer,

[0025] (3) forming an isolation layer on the heating electrode layer,

[0026] (4) using a lift-off photolithography method to make heating electrode pads on both sides of the isolation layer,

[0027] (5) making an infrared emitting layer on the insulating layer inside the heating electrode pad,

[0028] (6) depositing a protective layer to cover the upper surfaces of the infrared emitting layer, the infrared electrode layer and the supporting thin film layer,

[0029] (7) Using double-sided alignment photolithography technology to etch the back of the substrate to form a cavity structure,

[0030] A suspension area supported by a supporting film layer is formed above the cavity structure, and the infrared emission layer is located within the suspension area, while the heating electrode pad is located outside the suspension area. The heating electrode pad is supported by the supporting film layer and the substrate to facilitate bonding of the heating electrode pad to an external circuit lead.

[0031] (8) Making a reflective layer in the cavity structure on the back side of the substrate,

[0032] Furthermore, the infrared emission layer manufacturing process includes two steps of deposition and surface treatment. First, the infrared emission layer is deposited on the isolation layer inside the heating electrode pad, and then the infrared emission layer is surface treated by dry etching or wet etching to obtain an infrared emission layer with a rough surface and a thickness of 50-1000nm.

[0033] Compared with the prior art, the present invention has the following beneficial effects:

[0034] Compared with the existing MEMS infrared light source, the present invention introduces a reflective layer with high reflectivity for infrared radiation on the heating electrode layer and the back of the supporting material (located in the substrate cavity area), thereby reflecting back the infrared radiation energy radiated by the heating electrode layer to the substrate cavity part via the supporting film (this part of the infrared radiation energy in the existing structure is wasted), and radiates upward through the heating electrode layer, so that the infrared radiation energy radiated outward by the MEMS infrared light source is strengthened, which greatly improves the photoelectric conversion efficiency of the MEMS infrared light source and reduces the heating power consumption. At the same time, the introduction of the reflective layer can strengthen the suspended membrane structure, improve the mechanical strength of the suspended membrane structure, reduce the rupture rate of the suspended membrane structure, and improve the manufacturing qualification rate and use reliability of the infrared light source. In addition, compared with the infrared emission layer of the existing MEMS infrared light source with a thickness of several microns to tens of microns, the present invention also introduces an ultra-thin (thickness not more than 1 micron) infrared emission layer, which ensures that the MEMS infrared light source has a high infrared emission capability while greatly reducing the thermal mass of the heating electrode layer, improving the modulation frequency of the MEMS infrared light source and further reducing the heating power consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 This is a schematic cross-sectional diagram of a conventional structure MEMS infrared light source.

[0036] Figure 2 This is a schematic cross-sectional view of a MEMS infrared light source in Example 1 of the present invention.

[0037] Figure 2-1 This is a cross-sectional schematic diagram of step 1 of a method for manufacturing a MEMS infrared light source in Example 1 of the present invention.

[0038] Figure 2-2 This is a cross-sectional schematic diagram of step 2 of a method for manufacturing a MEMS infrared light source in Example 1 of the present invention.

[0039] Figure 2-3 This is a cross-sectional schematic diagram of step 3 of a method for manufacturing a MEMS infrared light source in Example 1 of the present invention.

[0040] Figure 2-4 This is a cross-sectional schematic diagram of step 4 of a method for manufacturing a MEMS infrared light source in Example 1 of the present invention.

[0041] Figure 2-5 This is a cross-sectional schematic diagram of step 5 of a method for manufacturing a MEMS infrared light source in Example 1 of the present invention.

[0042] Figure 2-6 This is a cross-sectional schematic diagram of step 6 of a method for manufacturing a MEMS infrared light source in Example 1 of the present invention.

[0043] Figure 2-7 This is a cross-sectional schematic diagram of step 7 of a method for manufacturing a MEMS infrared light source in Example 1 of the present invention.

[0044] Figure 2-8 This is a cross-sectional schematic diagram of step 8 of a method for manufacturing a MEMS infrared light source in Example 1 of the present invention.

[0045] Illustration: 100 - cavity structure, 101 - substrate, 102 - supporting film layer, 103 - heating electrode layer, 104 - heating electrode pad, 105 - protective layer, 200 - cavity structure, 201 - substrate, 202 - supporting film layer, 203 - heating electrode layer, 204 - isolation layer, 205 - heating electrode pad, 206 - infrared emitting layer, 207 - protective layer, 208 - reflective layer. DETAILED DESCRIPTION

[0046] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0047] Embodiment 1:

[0048] like Figure 2The figure shows a schematic cross-sectional view of a MEMS infrared light source of the present invention, comprising a substrate 201, a supporting film layer 202, a heating electrode layer 203, an isolation layer 204, a heating electrode pad 205, an infrared emitting layer 206, a protective layer 207 and a reflecting layer 208, characterized in that: the substrate 201 comprises a cavity structure 200, the supporting film layer 202 is arranged on the substrate 201 having the cavity structure, and is connected to the substrate 201 by a four-side fixed support structure, and a suspension area is formed above the cavity structure 200, a heating electrode layer 203 is arranged above the supporting film layer 202, and a heating electrode layer 203 is arranged outside the suspension area. Heating electrode pads 205 are provided on both sides of the heating electrode layer 203, and the heating electrode pads 205 are electrically connected to the heating electrode layer 203. An isolation layer 204 is provided in the area above the heating electrode 203 except the heating electrode pads 205. An infrared emitting layer 206 is provided on the corresponding isolation layer 204 above the suspension area. The protective layer 207 is located on the upper surfaces of the infrared emitting layer, the infrared electrode layer and the supporting film layer except the heating electrode pads 205. The reflecting layer 208 is located in the cavity structure 200, and is connected to the substrate on the side of the cavity structure and the supporting film layer on the top surface of the cavity structure.

[0049] The reflective layer 208 is a thin film with high reflectivity for infrared rays in the wavelength range of 2-14 microns, including Ag, Au, Cu, Al or a dielectric film Bragg reflective layer.

[0050] The infrared emitting layer 206 is made of a material with a rough surface, a thickness in the range of 50-1000 nm and a high infrared emissivity, including NiCr alloy, TiN, TiAlN, amorphous carbon, SiC, NiCrO compound, ZrO 2 , HfO 2 ,La 1-x Ca x CrO 3 (0≤x≤0.5) and carbon nanotubes, etc.

[0051] The heating electrode layer 203 is made of Pt, Mo, NiCr alloy, polysilicon, SiC, Cu, W, HfB 2 , PtSi and SnO 2 One of them can introduce Ti, Cr, Ni, etc. between the heating electrode layer and the supporting film layer to increase the adhesion between the heating electrode layer 203 and the supporting film layer 202.

[0052] The supporting film layer 202 is a multi-layer composite film structure composed of silicon oxide, silicon nitride or silicon nitride and silicon oxide.

[0053] The isolation layer 204 is one or a combination of silicon oxide, silicon nitride, and aluminum oxide.

[0054] The protective layer 207 is one or a combination of silicon oxide, silicon nitride, aluminum oxide, and hafnium oxide.

[0055] The heating electrode pad 205 is one of AlSi alloy, Au, Al, NiCr alloy and NiV alloy.

[0056] The substrate 201 is single crystal silicon or quartz.

[0057] The present invention provides a method for manufacturing a MEMS infrared light source, comprising the following steps:

[0058] (1) Figure 2-1 As shown, a substrate 201 is provided, and a supporting film layer 202 is deposited on the substrate 201. The supporting film layer 202 is a multilayer composite film structure composed of silicon oxide, silicon nitride, or silicon nitride and silicon oxide. The substrate 201 is single crystal silicon or quartz;

[0059] (2) Figure 2-2 As shown, a heating electrode layer 203 is fabricated on the supporting film layer 202. The heating electrode layer 203 is made of Pt, Mo, NiCr alloy, polysilicon, SiC, Cu, W, HfB 2 , PtSi and SnO 2 One of them can introduce Ti, Cr, Ni, etc. between the heating electrode layer 203 and the supporting film layer 202 to increase the adhesion between the heating electrode layer 203 and the supporting film layer 202;

[0060] (3) Figure 2-3 As shown, an isolation layer 204 is formed on the heating electrode layer 203, and the isolation layer 204 is one or a combination of silicon oxide, silicon nitride, and aluminum oxide;

[0061] (4) Figure 2-4 As shown, the heating electrode pads 205 are made by lift-off photolithography on both sides of the isolation layer 204, and the heating electrode pads 205 are electrically connected to the heating electrode layer 203. The heating electrode pads are one of AlSi alloy, Au, Al, NiCr alloy, and NiV alloy;

[0062] (5) Figure 2-5 As shown, an infrared emitting layer 206 is formed on the isolation layer inside the heating electrode pad 205. The infrared emitting layer 206 is made of a material with a rough surface, a thickness in the range of 50-1000nm and a high infrared emissivity, including NiCr alloy, TiN, TiAlN, amorphous carbon, SiC, NiCrO compound, ZrO 2 , HfO 2 ,La 1-x Ca x CrO3 (0≤x≤0.5) and carbon nanotubes, etc.;

[0063] (6) Figure 2-6 As shown, a protective layer 207 is deposited to cover the upper surfaces of the infrared emission layer 206, the infrared electrode layer and the supporting film layer, and the protective layer 207 is one or a combination of silicon oxide, silicon nitride, aluminum oxide and hafnium oxide;

[0064] (7) Figure 2-7 As shown, a cavity structure 200 is formed by etching the back of the substrate using a double-sided alignment photolithography technology, a suspension area supported by a support film layer 202 is formed above the cavity structure 200, and the infrared emitting layer 206 is located in the suspension area, while the heating electrode pad 205 is located outside the suspension area, and the heating electrode pad 205 is supported by the support film layer 202 and the substrate 201 below, so as to facilitate the bonding of the heating electrode pad 205 with the external circuit lead;

[0065] (8) Figure 2-8 As shown, a reflective layer 208 is made in the cavity structure 200 on the back side of the substrate 201, and the reflective layer 208 is connected to the substrate on the side of the cavity structure 200 and the supporting film layer on the top surface of the cavity structure. The reflective layer 208 is a thin film with high reflectivity for infrared rays in the wavelength range of 2-14 microns, including Ag, Au, Cu, Al or a dielectric film Bragg reflection layer.

[0066] The infrared emission layer manufacturing process includes two steps of deposition and surface treatment. First, the infrared emission layer is deposited on the isolation layer inside the heating electrode pad, and then the infrared emission layer is surface treated by dry etching or wet etching to obtain an infrared emission layer with a rough surface and a thickness of 50-1000nm.

[0067] The above only expresses the preferred embodiments of the present invention, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the present invention. It should be pointed out that for ordinary technicians in this field, several modifications, improvements and substitutions can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. A MEMS infrared light source, comprising a substrate, a supporting film layer, a heating electrode layer, an isolation layer, a heating electrode pad, an infrared emission layer, a protective layer and a reflection layer, characterized in that: The substrate comprises a cavity structure, the supporting film layer is arranged on the substrate having the cavity structure, is connected with the substrate to form a four-side fixed support structure, and forms a suspension area above the cavity structure, a heating electrode layer is arranged above the supporting film layer, heating electrode pads are arranged on both sides of the heating electrode layer outside the suspension area, the heating electrode pads are electrically connected to the heating electrode layer, an isolation layer is arranged in the area above the heating electrode layer except for the heating electrode pads, an infrared emission layer is arranged on the corresponding isolation layer above the suspension area, the infrared emission layer is made of a material with a rough surface, a thickness in the range of 50-1000nm and a high infrared emissivity, and is NiCr alloy, TiN, TiAlN, amorphous carbon, SiC, NiCrO compound, ZrO2, HfO2, La 1-x Ca x CrO3 (0≤x≤0.5) or carbon nanotubes; the protective layer is located on the upper surfaces of the infrared emitting layer, the infrared electrode layer and the supporting film layer except the heating electrode pad, and the reflecting layer is located in the cavity structure, connected to the substrate on the side of the cavity structure and the supporting film layer on the top surface of the cavity structure.

2. A MEMS infrared light source according to claim 1, characterized in that: The reflective layer is a thin film with high reflectivity for infrared rays in the wavelength range of 2-14 microns, and is Ag, Au, Cu, Al or a dielectric film Bragg reflective layer.

3. A MEMS infrared light source according to claim 1, characterized in that: The heating electrode layer is one of Pt, Mo, NiCr alloy, polysilicon, SiC, Cu, W, HfB2, PtSi and SnO2. A Ti layer, Cr layer or Ni layer with a thickness of 1-200nm can be introduced between the heating electrode layer and the supporting film layer to increase the adhesion between the heating electrode layer and the supporting film layer.

4. A MEMS infrared light source according to claim 1, characterized in that: The supporting film layer is a multilayer composite film structure composed of silicon oxide, silicon nitride or silicon nitride and silicon oxide; the isolation layer is one or a combination of silicon oxide, silicon nitride, and aluminum oxide; the protective layer is one or a combination of silicon oxide, silicon nitride, aluminum oxide, and hafnium oxide; the heating electrode pad is one of AlSi alloy, Au, Al, NiCr alloy and NiV alloy.

5. A MEMS infrared light source according to claim 1, characterized in that: The substrate is single crystal silicon or quartz.

6. A method for manufacturing a MEMS infrared light source according to any one of claims 1 to 5, characterized in that: The following steps are involved: (1) providing a substrate, and depositing a supporting film layer on the substrate; (2) fabricating a heating electrode layer on the supporting film layer, or first fabricating a Ti layer, a Cr layer or a Ni layer on the supporting film layer and then fabricating the heating electrode layer; (3) forming an isolation layer on the heating electrode layer; (4) using a lift-off photolithography method to form heating electrode pads on both sides of the isolation layer, wherein the heating electrode pads are electrically connected to the heating electrode layer; (5) forming an infrared emitting layer on the isolation layer inside the heating electrode pad; (6) depositing a protective layer to cover the upper surfaces of the infrared emitting layer, the infrared electrode layer and the supporting film layer; (7) A cavity structure is formed by etching the back side of the substrate using double-sided alignment photolithography technology, and a suspension area supported by a supporting film layer is formed above the cavity structure, and the infrared emission layer is located within the suspension area, while the heating electrode pad is located outside the suspension area. The heating electrode pad is supported by the supporting film layer and the substrate below to facilitate bonding of the heating electrode pad to the external circuit lead; (8) A reflective layer is fabricated in the cavity structure on the back side of the substrate.

7. The method for manufacturing a MEMS infrared light source according to claim 6, characterized in that: The infrared emission layer manufacturing process includes two steps of deposition and surface treatment. First, the infrared emission layer is deposited on the isolation layer inside the heating electrode pad, and then the infrared emission layer is surface treated by dry etching or wet etching to obtain an infrared emission layer with a rough surface and a thickness of 50-1000nm.

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