High-power chip heat dissipation structure and preparation method thereof
By introducing an integrated adapter board structure onto a high-power chip, the coolant can directly exchange heat with the heat-generating junction, solving the problem of limited heat dissipation in existing technologies and achieving efficient heat dissipation and improved reliability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
- Filing Date
- 2021-11-23
- Publication Date
- 2026-06-09
AI Technical Summary
Existing heat dissipation methods for high-power chips rely on heat conduction through the chip substrate. The conduction path is long, and the heat dissipation effect is greatly affected by the thermal conductivity of the substrate, resulting in reduced device reliability and stability.
It adopts an integrated adapter board structure, including coolant channels and electrical connection components. The coolant directly exchanges heat with the chip's heat-generating junction area through microchannels, shortening the heat transfer path and using coolant circulation to remove heat from the chip.
It achieves efficient heat dissipation, improves the reliability and stability of high-power chips, and meets the heat dissipation requirements of substrates with low thermal conductivity.
Smart Images
Figure CN114256177B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of microelectronic heat dissipation technology, and in particular to a high-power chip heat dissipation structure and its fabrication method. Background Technology
[0002] With the development of semiconductor technology, the performance of semiconductor chips is constantly improving, and the power applied to the chips is also increasing. This leads to an increase in chip heat dissipation. If the heat generated by the chip cannot be dissipated in time, the chip temperature will rise sharply, seriously affecting the chip's performance and lifespan. At the same time, heat generation in the chip's heat-generating junction area is often uneven, resulting in uneven temperature distribution and large temperature gradients within the chip. This can create localized hot spots, affecting chip stability, and the thermal stress generated by the temperature gradient can reduce chip reliability. Many current high-power chips are designed for radio frequency (RF) applications, and RF signals pass through the chips. To prevent RF signals from being affected by external electromagnetic interference, appropriate shielding structures need to be designed to protect high-power chips.
[0003] Currently, heat dissipation methods for high-power chips include: fabricating metal heat sinks through micromachining, then coating the back of the high-power chip substrate with thermally conductive silver paste or other thermal interface materials, and finally bonding the metal heat sink to the substrate using these materials. Heat generated by the chip is conducted to the heat sink through the substrate and thermal interface material, and then the heat sink exchanges heat with the environment, thus dissipating the heat generated by the chip and achieving a heat dissipation effect.
[0004] The heat dissipation method for high-power chips also includes: fabricating a substrate with microchannels and a cover plate with liquid inlet and outlet structures, bonding the substrate with microchannels and the cover plate with liquid inlet and outlet structures to realize a complete microchannel with working fluid circulation capability, then coating the back of the high-power chip substrate with thermally conductive silver paste and other interface materials, and bonding the microchannel with double-layer structure to the underside of the high-power chip substrate through the thermal interface material, the heat generated by the chip is conducted to the microchannel through the substrate and thermal interface material, and the microchannel then exchanges heat with the coolant in the channel, and the heat generated by the chip is dissipated through the circulation of the coolant, thus achieving the heat dissipation effect.
[0005] Another method for heat dissipation of high-power chips includes: etching microchannels on the back of the high-power chip using etching technology, fabricating inlet and outlet structures in another substrate, and then bonding the substrate containing the high-power chip to another substrate with inlet and outlet structures to form an integrated chip with microchannels and inlet / outlet structures composed of a double-layer substrate. Heat generated by the chip is conducted through the substrate and then exchanged between the substrate and the coolant in the microchannels. The flow of the coolant carries away the heat generated by the chip, achieving a heat dissipation effect.
[0006] However, the current heat dissipation methods for high-power chips all require heat conduction through the chip substrate. The conduction path is long, and the heat dissipation effect is greatly affected by the thermal conductivity of the high-power chip substrate, resulting in poor heat dissipation and potentially leading to device failure, thus reducing the reliability and stability of high-power chips. Summary of the Invention
[0007] The purpose of this invention is to provide a high-power chip heat dissipation structure and its fabrication method, in order to solve the problem that current heat dissipation methods all require heat conduction through the chip substrate, which results in a long conduction path, and the heat dissipation effect is severely affected by the thermal conductivity of the high-power chip substrate, leading to poor heat dissipation performance, which may cause device failure and reduce the reliability and stability of high-power chips.
[0008] In a first aspect, the present invention provides a high-power chip heat dissipation structure for use in the heat dissipation process of a high-power chip, the high-power chip heat dissipation structure comprising:
[0009] An integrated adapter board located on the front of the high-power chip;
[0010] The integrated adapter board includes a cooling structure and electrical connection components; the cooling structure forms multiple coolant channels, each coolant channel including a connected inlet channel, a microchannel and an outlet channel, and the microchannel is located on the front side of the high-power chip;
[0011] During the operation of the high-power chip, the liquid inlet channel is used to introduce coolant into the microchannel to dissipate heat from the heat-generating junction area of the high-power chip, and the liquid outlet channel is used to export the coolant after it has passed through the microchannel.
[0012] One side of the electrical connection assembly is connected to the cooling structure, and the other side is electrically connected to the high-power chip.
[0013] With the above technical solution, coolant can be guided to the heat-generating junction area on the front side of the high-power chip through microchannels, allowing the heat-generating junction area of the high-power chip to directly exchange heat with the coolant. This enables the heat generated by the chip to be directly conducted to the coolant and carried away by the circulating flow of the coolant, shortening the heat transfer path, achieving efficient heat dissipation, meeting the heat dissipation requirements of high-power chips with low substrate thermal conductivity, and improving the reliability and stability of high-power chips.
[0014] In one possible implementation, the liquid inlet channel includes a liquid inlet, and the liquid outlet channel includes a liquid outlet, with the liquid inlet and the liquid outlet located on the side of the integrated adapter board opposite to the front of the high-power chip.
[0015] In one possible implementation, the high-power chip heat dissipation structure further includes a sealed isolation structure located on the front side of the high-power chip and between the cooling structure and the electrical connection assembly, for preventing the coolant from seeping from the cooling structure into the electrical connection assembly.
[0016] In one possible implementation, the high-power chip includes a semiconductor substrate, and a device layer and a surface dielectric layer sequentially disposed on the semiconductor substrate; the integrated adapter board is located on the surface dielectric layer; the device layer includes a heat-generating junction region, and the microchannel is disposed opposite to the heat-generating junction region.
[0017] In one possible implementation, the high-power chip further includes a chip connection assembly located on the device layer, on both sides of the surface dielectric layer;
[0018] The electrical connection component includes an adapter board circuit, wherein the pins of the adapter board circuit are electrically connected to the pins of the chip connection component in a one-to-one correspondence.
[0019] In a second aspect, the present invention also provides a method for fabricating a high-power chip heat dissipation structure, used to fabricate the high-power chip heat dissipation structure described in any of the first aspects, the method comprising:
[0020] An electrical connection component and the cooling structure are fabricated to form an integrated adapter board including the cooling structure and the electrical connection component; one side of the electrical connection component in the integrated adapter board is connected to the cooling structure, and the other side is electrically connected to the high-power chip;
[0021] The cooling structure includes multiple coolant channels, each of which includes an inlet channel, a microchannel, and an outlet channel. The microchannel is located on the front side of the high-power chip. During the operation of the high-power chip, the inlet channel is used to introduce coolant into the microchannel to dissipate heat from the heat-generating junction area of the high-power chip, and the outlet channel is used to discharge the coolant after it has passed through the microchannel.
[0022] In one possible implementation, the cooling structure includes a first cooling component and a second cooling component, and the fabrication of the electrical connection component and the cooling structure includes:
[0023] Prepare the first cooling component;
[0024] The electrical connection assembly is fabricated on the side of the first cooling assembly closer to the high-power chip;
[0025] Prepare the second cooling component;
[0026] The first cooling component and the second cooling component are bonded together to form the liquid inlet channel and the liquid outlet channel between the first cooling component and the second cooling component. The microchannel is formed below the first cooling component and the second cooling component and in the area opposite to the heat-generating junction of the high-power chip.
[0027] In one possible implementation, the electrical connection assembly includes an adapter board circuit, and the fabrication of the first cooling assembly, wherein the electrical connection assembly is fabricated on the side of the first cooling assembly closer to the high-power chip, includes:
[0028] A first heat-dissipating substrate is provided, comprising a first surface and a second surface opposite to each other;
[0029] A sealed isolation structure and the adapter circuit are fabricated on the first heat dissipation substrate from the first surface;
[0030] A first microchannel of a first predetermined depth is formed in the first heat dissipation substrate from the first surface; wherein the microchannel is located in a different region from the sealing isolation structure and the adapter circuit on the first surface of the first heat dissipation substrate;
[0031] Along the extension direction of the first microchannel, a micro-via of a second predetermined depth is formed in the first heat dissipation substrate from the second surface, communicating with the microchannel;
[0032] The adapter board circuit includes multiple adapter electrical pins, and the number of adapter electrical pins is the same as that of the chip electrical pins; the positions of the adapter electrical pins and the positions of the chip electrical pins are set in a one-to-one correspondence.
[0033] In one possible implementation, the fabrication of the second cooling component includes:
[0034] A second heat dissipation substrate is provided, comprising a first surface and a second surface opposite to each other;
[0035] Multiple independent second microchannels, with the same number of micro-vias, are fabricated on the second heat dissipation substrate from the first surface;
[0036] Along the extension direction of the microchannels, half the number of microchannels are fabricated on the second heat dissipation substrate from the second surface, and multiple sets of liquid inlet and outlet channels are interconnected with the microchannels. Each set of liquid inlet and outlet channels includes a liquid inlet channel and a liquid outlet channel; each set of liquid inlet and outlet channels corresponds one-to-one with the microchannels.
[0037] In one possible implementation, bonding the first cooling component and the second cooling component includes:
[0038] The second side of the first heat dissipation substrate and the first side of the second heat dissipation substrate are bonded together to form an integrated adapter plate having the microchannel, the liquid inlet channel, the liquid outlet channel and the electrical connection component.
[0039] The beneficial effects of the method for preparing the high-power chip heat dissipation structure provided in the second aspect are the same as those of the high-power chip heat dissipation structure described in the first aspect or any possible implementation of the first aspect, and will not be repeated here. Attached Figure Description
[0040] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:
[0041] Figure 1 This illustration shows a schematic diagram of a high-power chip heat dissipation structure provided in an embodiment of this application;
[0042] Figure 2 A schematic flowchart of a method for fabricating a high-power chip heat dissipation structure according to an embodiment of this application is shown;
[0043] Figure 3 This illustration shows a process for preparing a first cooling component according to an embodiment of this application;
[0044] Figure 4 A schematic diagram of a process for preparing a second cooling component according to an embodiment of this application is shown. Attached image description:
[0046] 01-High-power chip; 02-Integrated adapter board; 021-Cooling structure; 022-Electrical connection assembly; 0211-Coolant channel; 0211a-Inlet channel; 0211b-Microchannel; 0211c-Outlet channel; 03-Sealed isolation structure; 011-Semiconductor substrate; 012-Device layer; 013-Surface dielectric layer; A-Heat junction region; P-First cooling assembly; Q-Second cooling assembly; X-Adapter board circuit; Y-Chip connection assembly; T-Micro via; 04-First heat dissipation substrate; 05-Second heat dissipation substrate. Detailed Implementation
[0047] To facilitate a clear description of the technical solutions in the embodiments of the present invention, the terms "first" and "second" are used to distinguish identical or similar items with essentially the same function and effect. For example, the first threshold and the second threshold are merely used to distinguish different thresholds and do not limit their order. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and that the terms "first" and "second" are not necessarily different.
[0048] It should be noted that in this invention, the terms "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in this invention should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.
[0049] In this invention, "at least one" refers to one or more, and "more than one" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can represent: a, b, c, a combination of a and b, a combination of a and c, a combination of b and c, or a, b, and c, where a, b, and c can be single or multiple.
[0050] Figure 1 This illustration shows a schematic diagram of a high-power chip heat dissipation structure according to an embodiment of this application, which is applied in the heat dissipation process of high-power chips, such as... Figure 1 As shown, the high-power chip heat dissipation structure includes an integrated adapter board 02 located on the front of the high-power chip 01;
[0051] The integrated adapter board 02 includes a cooling structure 021 and an electrical connection assembly 022; the cooling structure 021 has a plurality of coolant channels 0211, each coolant channel 0211 including a connected inlet channel 0211a, a microchannel 0211b and an outlet channel 0211c, and the microchannel 0211b is located on the front side of the high-power chip 01;
[0052] During the operation of the high-power chip 01, the liquid inlet channel 0211a is used to introduce coolant into the microchannel 0211b to dissipate heat from the heat-generating junction area A of the high-power chip 01, and the liquid outlet channel 0211c is used to export the coolant after passing through the microchannel 0211b.
[0053] One side of the electrical connection component 022 is connected to the cooling structure, and the other side is electrically connected to the high-power chip 01.
[0054] In summary, the high-power chip heat dissipation structure provided in this application embodiment can guide the coolant to the heat-generating junction area on the front side of the high-power chip through microchannels, allowing the heat-generating junction area of the high-power chip to directly exchange heat with the coolant. This enables the heat generated by the chip to be directly conducted to the coolant and carried away by the circulating flow of the coolant, shortening the heat transfer path, achieving efficient heat dissipation, meeting the heat dissipation requirements of high-power chips with low substrate thermal conductivity, and improving the reliability and stability of the high-power chip.
[0055] In this application, the microchannel can be zigzag-shaped, which can shorten the distance the coolant flows through, allowing the coolant to flow through a region on the front side of the high-power chip with a size on the order of micrometers, including the aforementioned heat-generating junction region.
[0056] Optionally, the liquid inlet channel includes a liquid inlet, and the liquid outlet channel includes a liquid outlet, with the liquid inlet and the liquid outlet located on the side of the integrated adapter board opposite to the front of the high-power chip.
[0057] Optional, see Figure 1 The high-power chip heat dissipation structure also includes a sealing isolation structure 03, which is located on the front side of the high-power chip 01 and between the cooling structure and the electrical connection component 022, to prevent the coolant from seeping from the cooling structure into the electrical connection component 022.
[0058] The sealing and isolation structure can be a sealing and isolation ring or other sealing and isolation devices. This application does not specifically limit the type of device; adjustments can be made based on the actual application scenario. The sealing and isolation ring forms a sealed microchannel, preventing coolant from seeping out and ensuring the stability and reliability of the electrical properties of nearby electrical structures.
[0059] Optional, see Figure 1 The high-power chip 01 includes a semiconductor substrate 011, and a device layer 012 and a surface dielectric layer 013 sequentially disposed on the semiconductor substrate 011; the integrated adapter board 02 is located on the surface dielectric layer 013; the device layer 012 includes a heat-generating junction region A, and the microchannel 0211b is disposed opposite to the heat-generating junction region A.
[0060] The surface dielectric layer can provide shielding and protection for the device.
[0061] Optionally, the material of the semiconductor substrate may include silicon, silicon carbide, diamond, or sapphire, etc., and this application embodiment does not specifically limit this.
[0062] Optional, see Figure 1 The electrical connection assembly 022 includes a first cooling assembly P and a second cooling assembly Q.
[0063] Optionally, the high-power chip further includes a chip connection component Y, which is located on the device layer 012 and on both sides of the surface dielectric layer 013.
[0064] Optional, see Figure 1 The first cooling component P in the electrical connection component 022 includes an adapter board circuit X, and the pins in the adapter board circuit X are electrically connected to the pins in the chip connection component Y in a one-to-one correspondence.
[0065] The adapter board circuit is used to connect to the pins of the high-power chip, forming a complete electrical connection for the power supply and signal input of the high-power chip. The number of pins on the adapter board circuit corresponds to the number of pins on the high-power chip, and the relative positions of the pins on the adapter board circuit correspond to the relative positions of the electrical pins on the high-power chip.
[0066] Optionally, the materials used to make the cooling structure may include materials such as silicon, glass, epoxy glass cloth laminate (FR4), or plexiglass, etc., and this application embodiment does not specifically limit them.
[0067] In summary, the high-power chip heat dissipation structure provided in this application embodiment can guide the coolant to the heat-generating junction area on the front side of the high-power chip through microchannels, allowing the heat-generating junction area of the high-power chip to directly exchange heat with the coolant. This enables the heat generated by the chip to be directly conducted to the coolant and carried away by the circulating flow of the coolant, shortening the heat transfer path, achieving efficient heat dissipation, meeting the heat dissipation requirements of high-power chips with low substrate thermal conductivity, and improving the reliability and stability of the high-power chip.
[0068] Figure 2 This illustration shows a flowchart of another method for fabricating a high-power chip heat dissipation structure according to an embodiment of this application, used for fabrication. Figure 1 The high-power chip heat dissipation structure, such as Figure 3 As shown, the method includes:
[0069] Step 101: Prepare the electrical connection assembly and the cooling structure to form an integrated adapter plate including the cooling structure and the electrical connection assembly.
[0070] In this application, the cooling structure includes a first cooling component and a second cooling component, and the fabrication of the electrical connection component and the cooling structure includes the following sub-steps:
[0071] Sub-step A1: Prepare the first cooling component.
[0072] Sub-step A2: Fabricate the electrical connection component on the side of the first cooling component near the high-power chip.
[0073] Sub-step A3: Prepare the second cooling component.
[0074] Sub-step A4: Bond the first cooling component and the second cooling component to form the liquid inlet channel and the liquid outlet channel between the first cooling component and the second cooling component, and form the microchannel below the first cooling component and the second cooling component, and in the area opposite to the heat-generating junction of the high-power chip.
[0075] In this application, the specific implementation process of sub-steps A1 and A2 above, namely, fabricating the first cooling component and fabricating the electrical connection component on the side of the first cooling component close to the high-power chip, may include:
[0076] Sub-step B1: Provide a first heat dissipation substrate including opposing first and second surfaces.
[0077] Example, Figure 3 This application provides a schematic diagram illustrating a process for preparing a first cooling component, as shown in the embodiment of the present application. Figure 3 As shown in (a), a first heat dissipation substrate 04 is first provided, comprising a first surface and a second surface opposite to each other.
[0078] Sub-step B2: Fabricate a sealed isolation structure and an adapter circuit on the first heat dissipation substrate from the first surface.
[0079] The adapter board circuit is used to connect to the pins of the high-power chip, forming a complete electrical connection for the power supply and signal input of the high-power chip. The number of pins on the adapter board circuit corresponds to the number of pins on the high-power chip, and the relative positions of the pins on the adapter board circuit correspond to the relative positions of the electrical pins on the high-power chip.
[0080] For example, see Figure 3 (b) A sealed isolation structure 03 and an adapter circuit X are fabricated on the first heat dissipation substrate 04.
[0081] Optionally, the above-mentioned sealed isolation structure and adapter circuit can be prepared by methods such as magnetron sputtering, wet chemical electroplating, evaporation coating, chemical vapor deposition (CVD), and physical vapor deposition (PVD). This application does not specifically limit this, and can be adjusted accordingly according to the actual application scenario.
[0082] Sub-step B3: Create a first microchannel of a first preset depth in the first heat dissipation substrate from the first surface.
[0083] In this application, the specific value of the first preset depth is not specifically limited, and can be calibrated and adjusted according to the actual application scenario.
[0084] For example, see Figure 3 (c) Etching the microchannel 0211b to a first preset depth.
[0085] Sub-step B4: Along the extension direction of the first microchannel, a microvia of a second predetermined depth is formed in the first heat dissipation substrate from the second surface, communicating with the microchannel.
[0086] The adapter board circuit includes multiple adapter electrical pins, and the number of adapter electrical pins is the same as that of the chip electrical pins; the positions of the adapter electrical pins and the positions of the chip electrical pins are set in a one-to-one correspondence.
[0087] For example, see Figure 3 (d) Along the extension direction of the first microchannel, a micro-hole T of a second predetermined depth is formed in the first heat dissipation substrate from the second surface, communicating with the microchannel.
[0088] In this application, the specific implementation process of preparing the second cooling component as described in sub-step A2 above may include:
[0089] Sub-step C1: Provide a second heat dissipation substrate comprising a first surface and a second surface opposite to each other.
[0090] Figure 4 This application provides a schematic diagram illustrating a process for preparing a second cooling component, as shown in the embodiment of the present application. Figure 4 As shown in (a), a second heat dissipation substrate 05, comprising a first surface and a second surface opposite to each other, is first provided.
[0091] Sub-step C2: Create multiple independent second microchannels on the second heat dissipation substrate from the first surface, with the same number as the microvias.
[0092] For example, such as Figure 4 As shown in (b), several independent microchannels 0211b can be fabricated on the second heat dissipation substrate from the first surface, and the number of microchannels corresponds to the number of micro-holes on the first heat dissipation substrate.
[0093] Sub-step C3: Along the extension direction of the microchannel, fabricate half the number of the microchannels on the second heat dissipation substrate from the second surface, and multiple sets of liquid inlet and outlet channels interconnected with the microchannels. Each set of liquid inlet and outlet channels includes a liquid inlet channel and a liquid outlet channel; each set of liquid inlet and outlet channels corresponds one-to-one with the microchannel.
[0094] For example, such as Figure 4 As shown in (c), a plurality of liquid inlet and outlet channels can be fabricated on the second heat dissipation substrate from the second surface. The liquid inlet channel 0211a and the liquid outlet channel 0211c are arranged adjacent to each other. The total number of liquid inlet channels and liquid outlet channels is the same as the number of independent microchannels and they correspond one to one. Each microchannel liquid inlet channel or liquid outlet channel is in the same vertical direction as the microchannel, and the liquid inlet channel and liquid outlet channel have a certain depth so that the liquid inlet channel and liquid outlet channel are interconnected with the microchannel.
[0095] It should be noted that in this application, the coolant can be a microfluidic. Using microfluidic cooling, based on the characteristics of microfluidics having a large specific heat capacity or a low boiling point, allows more heat to be carried away per unit volume, resulting in stronger heat dissipation capacity.
[0096] In this application, the second surface of the first heat dissipation substrate and the first surface of the second heat dissipation substrate can be bonded to form an integrated adapter plate having the microchannel, the liquid inlet channel, the liquid outlet channel and the electrical connection component.
[0097] Optionally, the second surface of the first heat dissipation substrate and the first surface of the second heat dissipation substrate can be bonded by bonding methods such as silicon-silicon bonding, anodic bonding, gold-silicon bonding, gold-gold bonding, gold-tin bonding, gold-indium bonding, copper-copper hot-press bonding, and polymer wafer bonding.
[0098] Optionally, the methods for fabricating the microchannels, microvias, liquid inlet channels, and liquid outlet channels in the integrated adapter board may include deep silicon etching (DRIE), plasma etching, reactive ion etching, laser etching, etc., and the embodiments of this application do not specifically limit these methods.
[0099] Step 102: Connect one side of the electrical connection component in the integrated adapter board to the cooling structure, and the other side to the high-power chip.
[0100] During the operation of the high-power chip, the liquid inlet channel is used to introduce coolant into the microchannel to dissipate heat from the heat-generating junction area of the high-power chip, and the liquid outlet channel is used to export the coolant after it has passed through the microchannel.
[0101] The cooling structure includes multiple coolant channels, each of which includes an inlet channel, a microchannel, and an outlet channel, with the microchannel located on the front side of the high-power chip.
[0102] The first microchannel and the second microchannel constitute the microchannel.
[0103] In this application, the following methods are included: using silicon-based microfluidic adapter boards, glass microfluidic adapter boards, etc., to guide the coolant to the heat-generating junction area on the front side of the high-power chip, and using the coolant to dissipate the heat generated by the chip from the front side of the chip to achieve heat dissipation of the high-power chip; at the same time, using the circuit on the integrated adapter board to achieve the electrical connection of the high-power chip.
[0104] It should be noted that by using microchannels to guide the coolant to the heat-generating junction area on the front side of the high-power chip, the heat-generating junction area of the chip can directly exchange heat with the coolant. This allows the heat generated by the chip to be directly conducted to the coolant, and then carried away by the circulating flow of the coolant. This shortens the heat transfer path, achieves efficient heat dissipation, and meets the heat dissipation requirements of high-power chips with low substrate thermal conductivity.
[0105] In summary, the method for fabricating a high-power chip heat dissipation structure provided in this application embodiment can fabricate an electrical connection component and the cooling structure, forming an integrated adapter board including the cooling structure and the electrical connection component. One side of the electrical connection component in the integrated adapter board is connected to the cooling structure, and the other side is electrically connected to the high-power chip. During the operation of the high-power chip, the liquid inlet channel is used to introduce coolant into the microchannel to dissipate heat from the heat-generating junction area of the high-power chip, and the liquid outlet channel is used to export the coolant after passing through the microchannel. The cooling structure forms multiple coolant channels, each coolant channel including a connected liquid inlet channel, a microchannel, and a liquid outlet channel, and the microchannel is located on the front side of the high-power chip. The coolant can be guided to the heat-generating junction area on the front side of the high-power chip through microchannels, allowing the heat-generating junction area of the high-power chip to directly exchange heat with the coolant. This enables the heat generated by the chip to be directly conducted to the coolant, and then carried away by the circulating flow of the coolant. This shortens the heat transfer path, achieves efficient heat dissipation, meets the heat dissipation requirements of high-power chips with low substrate thermal conductivity, and improves the reliability and stability of high-power chips.
[0106] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, the disclosure, and the appended claims in carrying out the claimed invention. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit can implement several functions listed in the claims. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce good results.
[0107] Although the invention has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made therein without departing from the spirit and scope of the invention. Accordingly, this specification and drawings are merely exemplary descriptions of the invention as defined by the appended claims, and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. Clearly, those skilled in the art can make various alterations and modifications to the invention without departing from its spirit and scope. Thus, if such modifications and modifications of the invention fall within the scope of the claims and their equivalents, the invention is also intended to include such modifications and modifications.
Claims
1. A high-power chip heat dissipation structure, characterized in that, The high-power chip heat dissipation structure, used in the heat dissipation process of high-power chips, includes: The adapter board located on the front of the high-power chip; The adapter board includes a cooling structure and an electrical connection assembly; the cooling structure forms multiple coolant channels, each coolant channel including a connected inlet channel, a microchannel and an outlet channel, and the microchannel is located on the front side of the high-power chip; During the operation of the high-power chip, the liquid inlet channel is used to introduce coolant into the microchannel to dissipate heat from the heat-generating junction area of the high-power chip, and the liquid outlet channel is used to export the coolant after it has passed through the microchannel. One side of the electrical connection assembly is connected to the cooling structure, and the other side is electrically connected to the high-power chip. The high-power chip heat dissipation structure also includes a sealing isolation ring, which is located on the front of the high-power chip and between the cooling structure and the electrical connection assembly, to prevent the coolant from seeping from the cooling structure into the electrical connection assembly.
2. The high-power chip heat dissipation structure according to claim 1, characterized in that, The liquid inlet channel includes a liquid inlet, and the liquid outlet channel includes a liquid outlet. The liquid inlet and the liquid outlet are located on the side of the adapter board opposite to the front of the high-power chip.
3. The high-power chip heat dissipation structure according to claim 1, characterized in that, The high-power chip includes a semiconductor substrate, and a device layer and a surface dielectric layer sequentially disposed on the semiconductor substrate; the adapter plate is located on the surface dielectric layer; the device layer includes a heat-generating junction region, and the microchannel is disposed opposite to the heat-generating junction region.
4. The high-power chip heat dissipation structure according to claim 3, characterized in that, The high-power chip also includes a chip connection component, which is located on the device layer and on both sides of the surface dielectric layer. The electrical connection component includes an adapter board circuit, wherein the pins of the adapter board circuit are electrically connected to the pins of the chip connection component in a one-to-one correspondence.
5. A method for fabricating a high-power chip heat dissipation structure, characterized in that, The method for preparing the high-power chip heat dissipation structure according to any one of claims 1-4 includes: An electrical connection component and the cooling structure are fabricated to form an adapter plate including the cooling structure and the electrical connection component; one side of the electrical connection component in the adapter plate is connected to the cooling structure, and the other side is electrically connected to the high-power chip; The cooling structure includes multiple coolant channels, each of which includes an inlet channel, a microchannel, and an outlet channel. The microchannel is located on the front side of the high-power chip. During the operation of the high-power chip, the inlet channel is used to introduce coolant into the microchannel to dissipate heat from the heat-generating junction area of the high-power chip, and the outlet channel is used to discharge the coolant after it has passed through the microchannel.
6. The method for fabricating a high-power chip heat dissipation structure according to claim 5, characterized in that, The cooling structure includes a first cooling component and a second cooling component. The fabrication of the electrical connection component and the cooling structure includes: Prepare the first cooling component; The electrical connection assembly is fabricated on the side of the first cooling assembly closer to the high-power chip; Prepare the second cooling component; The first cooling component and the second cooling component are bonded together to form the liquid inlet channel and the liquid outlet channel between the first cooling component and the second cooling component. The microchannel is formed below the first cooling component and the second cooling component and in the area opposite to the heat-generating junction of the high-power chip.
7. The method for fabricating a high-power chip heat dissipation structure according to claim 6, characterized in that, The electrical connection assembly includes an adapter board circuit. The fabrication of the first cooling assembly, specifically the fabrication of the electrical connection assembly on the side of the first cooling assembly closest to the high-power chip, includes: A first heat-dissipating substrate is provided, comprising a first surface and a second surface opposite to each other; A sealing isolation ring and the adapter circuit are fabricated on the first heat dissipation substrate from the first surface; A first microchannel of a first predetermined depth is formed in the first heat dissipation substrate from the first surface; wherein the microchannel and the sealing isolation ring and the adapter circuit are located in different regions of the first surface of the first heat dissipation substrate; Along the extension direction of the first microchannel, a micro-via of a second predetermined depth is formed in the first heat dissipation substrate from the second surface, communicating with the microchannel; The adapter board circuit includes multiple adapter electrical pins, and the number of adapter electrical pins is the same as that of the chip electrical pins; the positions of the adapter electrical pins and the positions of the chip electrical pins are set in a one-to-one correspondence.
8. The method for fabricating a high-power chip heat dissipation structure according to claim 7, characterized in that, The preparation of the second cooling component includes: A second heat dissipation substrate is provided, comprising a first surface and a second surface opposite to each other; Multiple independent second microchannels, with the same number of micro-vias, are fabricated on the second heat dissipation substrate from the first surface; Along the extension direction of the microchannels, half the number of microchannels are fabricated on the second heat dissipation substrate from the second surface, and multiple sets of liquid inlet and outlet channels are interconnected with the microchannels. Each set of liquid inlet and outlet channels includes a liquid inlet channel and a liquid outlet channel; each set of liquid inlet and outlet channels corresponds one-to-one with the microchannels.
9. The method for fabricating a high-power chip heat dissipation structure according to claim 8, characterized in that, The bonding of the first cooling component and the second cooling component includes: The second side of the first heat dissipation substrate and the first side of the second heat dissipation substrate are bonded together to form an adapter plate having the microchannel, the liquid inlet channel, the liquid outlet channel and the electrical connection assembly.