Flash Memory Chip Programming Method, Device, System, Electronic Device and Storage Medium

Abstract

The present invention relates to the field of semiconductor integrated circuit technology, and specifically discloses a flash memory chip programming method, device, system, electronic device and storage medium, wherein the programming method includes the following steps: obtaining programming information; configuring unit programming information according to the programming information; configuring change address information that can traverse all addresses in the flash memory chip; programming the flash memory chip according to the change address information and the unit programming information; the programming method programs the flash memory chip in combination with the change address information and the unit programming information, thereby quickly programming the storage data of the flash memory chip into data with regional repetitive characteristics, eliminating the process of repeatedly establishing and sending corresponding programming instructions for each address of the flash memory chip, effectively improving the programming efficiency of the flash memory chip, and simplifying the entire programming process.

Description

Technical Field

[0001] The present application relates to the field of semiconductor integrated circuit technology, and more specifically, to a flash memory chip programming method, device, system, electronic device, and storage medium. Background Art

[0002] Programming of flash memory chips is generally achieved by sending page program instructions. Regardless of whether the programming content is the same, a page program instruction corresponding to each page address in the flash memory chip must be generated.

[0003] Full-chip programming of a flash memory chip generally involves programming the flash memory chip with data that has regional repetitive characteristics. If the above programming method is used, the same page program instructions need to be repeatedly generated and sent to the flash memory chip for programming in a loop. This process is very clumsy and seriously restricts the programming efficiency of the flash memory chip.

[0004] There is currently no effective technical solution to the above problems. Summary of the Invention

[0005] The purpose of this application is to provide a flash memory chip programming method, device, system, electronic device and storage medium to improve the programming efficiency of the flash memory chip.

[0006] In a first aspect, the present application provides a flash memory chip programming method for programming a flash memory chip, the programming method comprising the following steps:

[0007] Get programming information;

[0008] configuring unit programming information according to the programming information;

[0009] Configuring change address information capable of traversing all addresses in the flash memory chip;

[0010] The flash memory chip is programmed according to the changed address information and the unit programming information.

[0011] A flash memory chip programming method of the present application combines changing address information and unit programming information to program the flash memory chip, thereby quickly programming the storage data of the flash memory chip into data with regional repetitive characteristics, eliminating the process of repeatedly establishing and sending corresponding programming instructions for each address of the flash memory chip, effectively improving the programming efficiency of the flash memory chip, and simplifying the entire programming process.

[0012] In the flash memory chip programming method, the changed address information is an incrementally changing paging address or a decrementally changing paging address.

[0013] In a flash memory chip programming method in this example, changing address information from small addresses to large addresses at certain intervals can enable the flash memory chip to traverse all addresses, or changing large addresses to small addresses at certain intervals can enable the flash memory chip to traverse all addresses.

[0014] In the flash memory chip programming method, the step of programming the flash memory chip according to the change address information and the unit programming information includes:

[0015] Setting the starting address, final address and address change interval of the change address information according to the programming information;

[0016] Taking the starting address as the programming starting point, setting the current address according to the address change interval;

[0017] Programming the flash memory chip according to the current address and the unit programming information;

[0018] The programming of the flash memory chip is ended when the final address programming is completed.

[0019] In a flash memory chip programming method of this example, the flash memory chip is programmed with the same set of unit programming information, and programming of different addresses can be completed without repeatedly constructing new programming commands for different addresses, effectively saving the time of establishing programming commands, thereby improving programming efficiency.

[0020] The method for programming a flash memory chip, wherein the step of programming the flash memory chip according to the current address and the unit programming information includes: programming the flash memory chip according to the current address and the unit programming information, and periodically querying whether the current address has been programmed.

[0021] In a flash memory chip programming method of this example, setting a suitable query time interval to query the programming status can effectively save resources and reduce power consumption.

[0022] In the flash memory chip programming method, the unit programming information includes a set of programming instructions for programming any one of the data of all 0s, all 1s, 55, aa, a5, 5a, CKBD, and ICKBD.

[0023] In the flash memory chip programming method, the step of configuring unit programming information according to the programming information includes:

[0024] The unit programming information including the corresponding programming instruction is called according to the programming information, or the unit programming information including the corresponding programming instruction is written according to the programming information.

[0025] In a second aspect, the present application further provides a flash memory chip programming device for programming a flash memory chip, the programming device comprising a volatile control register, the volatile control register comprising:

[0026] Acquisition module, used to obtain programming information;

[0027] a programming configuration module, configured to configure unit programming information according to the programming information;

[0028] An address configuration module, configured to configure change address information capable of traversing all addresses in the flash memory chip;

[0029] A programming module is used to program the flash memory chip according to the changed address information and the unit programming information.

[0030] A flash memory chip programming device of the present application utilizes a programming configuration module to configure unit programming information according to the programming information obtained by an acquisition module, and utilizes an address configuration module to configure change address information that can traverse all addresses in the flash memory chip, and then programs the flash memory chip through the programming module in combination with the change address information and the unit programming information, thereby quickly programming the storage data of the flash memory chip into data with regional repetitive characteristics, eliminating the process of repeatedly establishing and sending corresponding programming instructions for each address of the flash memory chip, effectively improving the programming efficiency of the flash memory chip, and simplifying the entire programming process.

[0031] In a third aspect, the present application further provides a flash memory chip programming system for programming a flash memory chip, the programming system comprising:

[0032] a controller, configured to obtain operation information and generate programming information according to the operation information;

[0033] a volatile control register electrically connected to the controller, configured to obtain the programming information and configure unit programming information according to the programming information, further configured to configure change address information capable of traversing all addresses in the flash memory chip, and configured to program the flash memory chip according to the change address information and the unit programming information;

[0034] When the controller generates a program enable signal, the volatile control register programs the flash memory chip.

[0035] A flash memory chip programming system of the present application utilizes a volatile control register to obtain programming information generated by a controller, and configures unit programming information and change address information that can traverse all addresses in the flash memory chip based on the programming information, and programs the flash memory chip in combination with the change address information and the unit programming information, thereby quickly programming the storage data of the flash memory chip into data with regional repetitive characteristics, eliminating the process of repeatedly establishing and sending corresponding programming instructions for each address of the flash memory chip, effectively improving the programming efficiency of the flash memory chip, and simplifying the entire programming process.

[0036] In a fourth aspect, the present application also provides an electronic device comprising a processor and a memory, wherein the memory stores computer-readable instructions. When the computer-readable instructions are executed by the processor, the steps in the method provided in the first aspect above are executed.

[0037] In a fifth aspect, the present application further provides a storage medium on which a computer program is stored. When the computer program is executed by a processor, the steps in the method provided in the first aspect are executed.

[0038] From the above, it can be seen that the present application provides a flash memory chip programming method, device, system, electronic device and storage medium, wherein the programming method configures unit programming information according to the programming information, and configures the change address information that can traverse all addresses in the flash memory chip, and programs the flash memory chip in combination with the change address information and the unit programming information, so that the storage data of the flash memory chip is quickly programmed into data with regional repetition characteristics, eliminating the process of repeatedly establishing and sending corresponding programming instructions for each address of the flash memory chip, effectively improving the programming efficiency of the flash memory chip, and simplifying the entire programming process. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 A flowchart of a flash memory chip programming method provided in an embodiment of the present application.

[0040] Figure 2 A schematic diagram of the structure of a flash memory chip programming device provided in an embodiment of the present application.

[0041] Figure 3 A schematic diagram of the structure of a flash memory chip programming system provided in an embodiment of the present application.

[0042] Figure 4 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0043] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work fall within the scope of protection of the present application.

[0044] It should be noted that similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and should not be understood as indicating or implying relative importance.

[0045] The manufacturing process of flash memory chips requires wafer probing (CP). During the wafer probing process, the data in the flash memory chip needs to be programmed with the same data multiple times, so the flash memory chip needs to be fully programmed.

[0046] The existing method for programming the entire flash memory chip generally performs programming by cyclically generating and sending pageprogram instructions. The instruction sending process for a flash memory chip is as follows:

[0047] 1. Send 8-bit page program command + 24-bit address (24'H0) + 256-byte data + program time (1-4ms) query until the algorithm ends;

[0048] 2. Send 8-bit page program command + 24-bit address (24'H100) + 256-byte data + program time (1-4ms) query until the algorithm ends;

[0049] 3. Send 8-bit page program command + 24-bit address (24'H200) + 256-byte data + program time (1-4ms) query until the algorithm ends;

[0050] …

[0051] N. Send 8-bit page program instruction + 24-bit address (maximum address) + 256-byte data + program time (1-4ms) query until the algorithm ends;

[0052] Wherein, N is set according to the capacity of the flash memory chip. For example, when the capacity of the flash memory chip is 1 Mb, N=512; when the capacity of the flash memory chip is 8 Mb, N=4096.

[0053] In the above programming process, a corresponding page program instruction must be generated for each address, which seriously restricts the programming efficiency of the flash memory chip.

[0054] First, please refer to Figure 1 , Figure 1 A flash memory chip programming method in some embodiments of the present application is used to program a flash memory chip. The programming method includes the following steps:

[0055] S1. Obtain programming information;

[0056] Specifically, the programming information is the entire programming task that needs to be executed on the flash memory chip at present. It is generated according to the operation command of the host computer. It contains the location information of the operation area that needs to be programmed in the flash memory chip and the information of the data performance result after programming the corresponding operation area. For example: according to the test requirements, the entire flash memory chip needs to be programmed to all 1 data, then a programming task is generated for programming the entire flash memory chip to 1.

[0057] More specifically, the programming information is a global task and does not include specific voltage pulse adjustment instructions applied to the memory cells.

[0058] More specifically, since the programming method of the embodiment of the present application is mainly used in CP testing, and the CP test is mainly for verifying voltage, current, timing and function, it is generally necessary to program the storage cell data in the flash memory chip into the same form or a form with a specific distribution pattern, such as all 0, all 1, 55, aa, a5, 5a, CKBD (checkerboard) data, ICKBD (inverse checkerboard) data, etc. These data all have the characteristics of regional repetition, that is, after being divided into a certain address range, the data in each divided area is the same; therefore, the programming information is a global task of programming the data in the specific continuous address area of the flash memory chip or the entire chip area into the above-mentioned data with regional repetition characteristics.

[0059] S2. Configure unit programming information according to the programming information;

[0060] Specifically, the unit programming information is a programming instruction configured according to the regional repetitive characteristics of the programming information. It is a repeatedly executable programming instruction that can program each divided area in the flash memory chip into the same data.

[0061] More specifically, the unit programming information can include specific voltage pulse adjustment instructions for programming data within a specific address range into the data type required by the CP test.

[0062] More specifically, the flash memory chip data required to be acquired by the programming information consists of a data structure obtained by programming the unit programming information, that is, the programming task cannot be completed if the unit programming information does not exist in the programming information.

[0063] Specifically, in some other implementations, the programming information may also be a programming instruction for compiling unit programming information.

[0064] S3, configuring the change address information that can traverse all addresses in the flash memory chip;

[0065] Specifically, since the CP test is to test the storage area of the flash memory chip, full-chip programming is generally required when programming the flash memory chip. Therefore, the set change address information needs to have the characteristic of traversing all addresses as the basis for full-chip programming.

[0066] More specifically, the change address information can traverse all addresses of the entire flash memory chip without repetition according to a certain change rule.

[0067] More specifically, the changing range of the changed address information covers all valid addresses in the flash memory chip, where the valid addresses correspond to continuous addresses and discontinuous addresses in the flash memory chip. The discontinuous addresses can be mapped and used using the FTL (Flash Translation Layer) layer of the flash memory chip, so that the changed address information can successfully find the corresponding valid address when traversing all addresses according to specific logic and cover all valid addresses of the entire flash memory chip.

[0068] S4. Program the flash memory chip according to the changed address information and the unit programming information.

[0069] Specifically, step S4 utilizes the combination of changing address information having the characteristic of traversing all addresses and unit programming information, thereby realizing programming of different addresses in the flash memory chip using the unit programming information, so that different address areas in the flash memory chip can be programmed according to the programming instructions of the same unit programming information to obtain data with regional repetition characteristics, thereby realizing rapid programming of specific continuous address areas or entire chip areas of the flash memory chip.

[0070] More specifically, step S4 is to program multiple addresses specified by the changing address information in the flash memory chip according to the same set of programming instructions of the unit programming information, so that the flash memory chip has data with regional repetitive characteristics.

[0071] More specifically, step S4 preferably uses only the unit programming information to program an address of a corresponding size specified by the change address information at the same time, so as to ensure the orderliness of the flash memory chip programming.

[0072] More specifically, since the CP test is to test the storage area of the flash memory chip, in the embodiment of the present application, step S4 is preferably to program the entire flash memory chip. Therefore, after the change address information traverses all addresses and combines the unit programming information to program the flash memory chip, the programming step is ended.

[0073] In other embodiments, the programming method of the embodiment of the present application can also be used in places other than CP testing. In this case, the programming method can realize the programming of the area of specific continuous addresses by limiting the traversal range of the changing address information, so that the area of specific continuous addresses of the flash memory chip has data with regional repetitive characteristics.

[0074] A flash memory chip programming method according to an embodiment of the present application configures unit programming information according to programming information, and configures change address information that can traverse all addresses in the flash memory chip, and programs the flash memory chip in combination with the change address information and the unit programming information, thereby quickly programming the storage data of the flash memory chip into data with regional repetitive characteristics, eliminating the process of repeatedly establishing and sending corresponding programming instructions for each address of the flash memory chip, effectively improving the programming efficiency of the flash memory chip, and simplifying the entire programming process.

[0075] In some preferred implementations, the changed address information is an incrementally changed paging address or a decrementally changed paging address.

[0076] Specifically, the programming of flash memory chips is generally performed using page program instructions, that is, programming is performed in units of one page. In the CP test, the data between pages of the flash memory chip after programming is completed is the same. Therefore, in the embodiment of the present application, it is preferred to use the page address as a single programming unit, and in this embodiment, it is preferred to use one page address.

[0077] More specifically, the programming method of the embodiment of the present application uses a page address as a programming unit, so that the programming instruction of the unit programming information corresponds to a page programming instruction, which is used to program one page address.

[0078] More specifically, the number of bits in the unit programming information may be the same as or different from the number of bits in the paging address. The unit programming information contains programming instructions, and its ultimate goal is to program the data in the corresponding paging address into the required data. It must be ensured that the operation content corresponding to the programming instructions contained in the unit programming information can complete the data programming of the entire paging address.

[0079] More specifically, to ensure that the changing address information can smoothly traverse all addresses of the flash memory chip, the changing address information is set to an increasing change or a decreasing change, that is, the changing address information gradually increases from a small address to a large address at a certain interval so that the flash memory chip traverses all addresses, or gradually decreases from a large address to a small address at a certain interval so that the flash memory chip traverses all addresses. In the embodiment of the present application, the increasing or decreasing interval is a paging address.

[0080] In the embodiment of the present application, the changed address information is preferably incremented starting from address 0.

[0081] In some preferred embodiments, the step of programming the flash memory chip according to the changed address information and the unit programming information includes:

[0082] S41, setting the starting address, final address and address change interval of the change address information according to the programming information;

[0083] Specifically, the programming information, as a global task, includes the location information of the area requiring programming operation in the flash memory chip and the information of the data performance result after programming the corresponding operation area. According to the location information of the area requiring programming operation, the starting address and the final address of the change address information can be determined. The address change interval is set according to the operation content corresponding to the programming instruction of the unit programming information. In the embodiment of the present application, the address change interval is a paging address, so that the change address information can start from the starting address information and change by a paging address size each time until it changes to the final address, so as to traverse all addresses of the flash memory chip.

[0084] S42, taking the start address as the programming starting point, setting the current address according to the address change interval;

[0085] Specifically, the changed address information is used to determine the current address that needs to be programmed, so the current address changes correspondingly from the start address so that the unit programming information can program all the page addresses that need to be programmed.

[0086] S43, programming the flash memory chip according to the current address and unit programming information;

[0087] Specifically, the specification of the current address corresponds to the operation content corresponding to the programming instruction of the unit programming information, so as to ensure that the unit programming information can successfully complete the data programming of the current address.

[0088] More specifically, since the current address is a gradually changing address, the programming method of the embodiment of the present application can program the flash memory chip with the same set of unit programming information by gradually changing the current address. The programming of different addresses can be completed without repeatedly constructing new programming commands for different addresses, which effectively saves the time for establishing the programming commands and thus improves programming efficiency.

[0089] S44. When the final address programming is completed, the programming of the flash memory chip is ended.

[0090] Specifically, step S43 determines whether the current address is the final address each time programming is completed. If so, it indicates that all addresses of the flash memory chip have been traversed during the entire change process of the current address, that is, the programming of all addresses in the flash memory chip has been completed using the unit programming information, so the programming of the flash memory chip is ended when the final address programming is completed.

[0091] In some preferred embodiments, programming the flash memory chip according to the current address and the unit programming information includes: programming the flash memory chip according to the current address and the unit programming information, and periodically querying whether programming of the current address is completed.

[0092] Specifically, step S43 is provided with a query time interval, and this step periodically queries whether the current address has been programmed according to the query time interval.

[0093] Specifically, continuously monitoring or querying the flash memory chip consumes a lot of resources. Therefore, setting a suitable query time interval to query the programming status can effectively save resources and reduce power consumption.

[0094] More specifically, in the programming method of the embodiment of the present application, after the current address is queried according to the query time interval and programming is completed, the current address is changed according to the address change interval, and then the changed current address is programmed according to the unit programming information.

[0095] More specifically, the query time interval is set according to the capacity of the programming address corresponding to the unit programming information, so that the query time can be consistent with the specific programming time, which can reduce power consumption while avoiding an increase in programming time due to an excessive query time interval.

[0096] More specifically, this step is performed by sending data consisting of unit programming information containing programming instructions and change address information containing the current address to the flash memory chip, so as to execute the programming instructions in the unit programming information on the current address in the flash memory chip for programming, and periodically checking whether the programming of the address is completed according to the query time interval. The detection method can be to check whether the programming instruction of the programming enable unit programming information is completed or to detect whether the data in the current address is the required data type.

[0097] In some preferred embodiments, the unit programming information includes a set of programming instructions for programming any one of data of all 0s, all 1s, 55, aa, a5, 5a, CKBD, and ICKBD.

[0098] Specifically, the CP test generally requires programming the entire flash memory chip into all 0s, all 1s, 55, aa, a5, 5a, CKBD, and ICKBD data. Therefore, the corresponding unit programming information is preferably a set of programming instructions for programming any one of all 0s, all 1s, 55, aa, a5, 5a, CKBD, and ICKBD data, so that after the flash memory chip is programmed, the data of each paging address in the entire chip corresponds to the same data type; wherein, the set of programming instructions is preferably a set of page programming instructions.

[0099] More specifically, the data 55, aa, a5, and 5a are all hexadecimal data.

[0100] In some preferred embodiments, the step of configuring unit programming information according to the programming information includes:

[0101] The unit programming information including the corresponding programming instruction is called according to the programming information, or the unit programming information including the corresponding programming instruction is written according to the programming information.

[0102] Specifically, the unit programming information can be set by writing or calling.

[0103] More specifically, since the programming data used in the CP test is relatively fixed, the unit programming information used to program the corresponding data type can be written in advance, and then the flash memory chip can be programmed by calling the unit programming information containing the corresponding programming instructions according to the programming information, thereby eliminating the process of writing the unit programming information and further improving the programming efficiency of the flash memory chip.

[0104] More specifically, for some unconventional or less used programming data, the programming information can be analyzed to obtain the regional repetition characteristics of the data, and then the unit programming information containing the corresponding programming instructions can be written according to the regional repetition characteristics to program the flash memory chip using the programming method of the embodiment of the present application, thereby achieving efficient programming of the flash memory chip.

[0105] In some preferred implementations, the programming method of the embodiment of the present application is a method for programming a flash memory chip when a programming enable signal is generated, and the programming enable signal is generated before step S1 or before step S4.

[0106] Specifically, when the programming enable signal is generated before step S1, step S1 includes: obtaining programming information after detecting that the programming enable signal is effective; at this time, the programming method of the embodiment of the present application starts programming the flash memory chip after the programming enable signal is effective.

[0107] Specifically, when the programming enable signal is generated before step S4, step S4 includes: after detecting that the programming enable signal is effective, programming the flash memory chip according to the change address information and the unit programming information; at this time, the programming method of the embodiment of the present application can set the change address information and the unit programming information in advance according to the programming information, and then can program the flash memory chip according to the programming enable signal with any set generation time.

[0108] Second, please refer to Figure 2 , Figure 2 A flash memory chip programming device provided in some embodiments of the present application is used to program a flash memory chip. The programming device includes a volatile control register, which includes:

[0109] Acquisition module 201, used to acquire programming information;

[0110] Programming configuration module 202, configured to configure unit programming information according to programming information;

[0111] The address configuration module 203 is used to configure the change address information that can traverse all addresses in the flash memory chip;

[0112] The programming module 204 is used to program the flash memory chip according to the changed address information and the unit programming information.

[0113] A flash memory chip programming device according to an embodiment of the present application utilizes a programming configuration module 202 to configure unit programming information based on the programming information obtained by an acquisition module 201, and utilizes an address configuration module 203 to configure change address information that can traverse all addresses in the flash memory chip. The flash memory chip is then programmed by combining the change address information and the unit programming information through a programming module 204, thereby quickly programming the storage data of the flash memory chip into data with regional repetitive characteristics, eliminating the process of repeatedly establishing and sending corresponding programming instructions for each address of the flash memory chip, effectively improving the programming efficiency of the flash memory chip, and simplifying the entire programming process.

[0114] In some preferred embodiments, the flash memory chip programming device is used to execute the flash memory chip programming method of the first aspect.

[0115] Thirdly, please refer to Figure 3 , Figure 3 A flash memory chip programming system provided in an embodiment of the present application is used to program a flash memory chip 400. The programming system includes:

[0116] The controller 100 is used to obtain operation information and generate programming information according to the operation information;

[0117] The volatile control register 200 is electrically connected to the controller 100 and is used to obtain programming information and configure unit programming information according to the programming information. It is also used to configure variable address information that can traverse all addresses in the flash memory chip and is used to program the flash memory chip 400 according to the variable address information and the unit programming information.

[0118] When the controller 100 generates a program enable signal, the volatile control register 200 programs the flash memory chip 400 .

[0119] Specifically, the operation information is operation information from the host computer, such as operation information issued by the user through the host computer to perform a certain type of test or programming operation on the flash memory chip.

[0120] Specifically, in the CP test, the traditional flash memory chip 400 generally generates page programming commands corresponding to different addresses of the flash memory chip 400 through the controller 100, and sends the page programming commands to the corresponding addresses of the flash memory chip 400 for programming, that is, the controller 100 and the flash memory chip 400 have a direct assignment relationship; the volatile control register 200 of the embodiment of the present application has two setting methods. The first is to set the programming system to a fixed connection relationship of the controller 100-volatile control register 200-flash memory chip 400, so that all programming information generated by the controller 100 must be generated by the volatile control register 200 to generate corresponding unit programming information for programming the flash memory chip 400. This setting method is suitable for the case where the controller 100 only generates the flash memory chip The other is when the controller 100 and the flash memory chip 400 have an assignment relationship, and a connection channel between the controller 100-volatile control register 200-flash memory chip 400 is added. At this time, the volatile control register 200 will continue to obtain the programming information generated by the controller 100, and when the programming information is a global task of programming the data in the area of the specific continuous address of the flash memory chip or the area of the whole chip as data with regional repetitive characteristics, the programming information is intercepted and the assignment relationship between the controller 100 and the flash memory chip 400 is temporarily interrupted, and the volatile control register 200 generates corresponding unit programming information to program the flash memory chip 400.

[0121] Since the system of the embodiment of the present application is mainly used in CP testing, the volatile control register 200 preferably adopts the first setting method.

[0122] A flash memory chip programming system according to an embodiment of the present application utilizes a volatile control register 200 to obtain programming information generated by a controller 100, and configures unit programming information and change address information that can traverse all addresses in the flash memory chip according to the programming information, and programs the flash memory chip 400 in combination with the change address information and the unit programming information, thereby quickly programming the storage data of the flash memory chip 400 into data with regional repetitive characteristics, eliminating the process of repeatedly establishing and sending corresponding programming instructions for each address of the flash memory chip, effectively improving the programming efficiency of the flash memory chip, and simplifying the entire programming process.

[0123] When programming a flash memory chip, a flash memory chip programming system of an embodiment of the present application uses a volatile control register 200 to prepare and store unit programming information (which can correspond to a page program instruction in a general programming method) for programming the flash memory chip. Therefore, the programming system of the embodiment of the present application does not need to repeatedly generate page program instructions for different paging addresses. The unit programming information stored in the volatile control register 200 is used to cyclically program the addresses corresponding to the changing address information, thereby effectively improving the programming efficiency of the flash memory chip.

[0124] Fourthly, please refer to Figure 4 , Figure 4 This is a structural diagram of an electronic device provided in an embodiment of the present application. The present application provides an electronic device 300, including: a processor 301 and a memory 302. The processor 301 and the memory 302 are interconnected and communicate with each other via a communication bus 303 and / or other forms of connection mechanisms (not shown). The memory 302 stores a computer program executable by the processor 301. When the computing device is running, the processor 301 executes the computer program to perform the method in any optional implementation of the above embodiment.

[0125] In a fifth aspect, an embodiment of the present application provides a storage medium having a computer program stored thereon, wherein when the computer program is executed by a processor, the method of any optional implementation of the above embodiment is executed. The storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk.

[0126] In summary, the embodiments of the present application provide a flash memory chip programming method, device, system, electronic device and storage medium, wherein the programming method configures unit programming information according to the programming information, and configures the change address information that can traverse all addresses in the flash memory chip, and programs the flash memory chip in combination with the change address information and the unit programming information, so that the storage data of the flash memory chip is quickly programmed into data with regional repetition characteristics, eliminating the process of repeatedly establishing and sending corresponding programming instructions for each address of the flash memory chip, effectively improving the programming efficiency of the flash memory chip, and simplifying the entire programming process.

[0127] In the embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interface, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0128] In addition, the units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0129] Furthermore, the functional modules in each embodiment of the present application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0130] In this document, relational terms such as first and second, etc. are used merely to distinguish one entity or operation from another entity or operation, but do not necessarily require or imply any actual relationship or order between these entities or operations.

[0131] The above description is merely an embodiment of the present application and is not intended to limit the scope of protection of the present application. For those skilled in the art, various modifications and variations of the present application are possible. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A flash memory chip programming method for programming a flash memory chip, characterized in that: The programming method comprises the following steps: Get programming information; configuring unit programming information according to the programming information, wherein the unit programming information is a programming instruction configured according to regional repetitive characteristics of the programming information; Configuring change address information capable of traversing all addresses in the flash memory chip; Programming the flash memory chip according to the changed address information and the unit programming information; The step of programming the flash memory chip according to the changed address information and the unit programming information includes: Setting the starting address, final address and address change interval of the change address information according to the programming information; Taking the starting address as the programming starting point, setting the current address according to the address change interval; Programming the flash memory chip according to the current address and the unit programming information, and periodically querying whether programming of the current address is completed; The programming of the flash memory chip is ended when the final address programming is completed.

2. A flash memory chip programming method according to claim 1, characterized in that: The changed address information is an incrementally changed paging address or a decrementally changed paging address.

3. A flash memory chip programming method according to claim 1, characterized in that: The unit programming information includes a set of programming instructions for programming any one of data of all 0s, all 1s, 55, aa, a5, 5a, CKBD, and ICKBD.

4. A flash memory chip programming method according to claim 1, characterized in that: The step of configuring unit programming information according to the programming information includes: The unit programming information including the corresponding programming instruction is called according to the programming information, or the unit programming information including the corresponding programming instruction is written according to the programming information.

5. A flash memory chip programming device for programming a flash memory chip, characterized in that: The programming device includes a volatile control register, and the volatile control register includes: Acquisition module, used to obtain programming information; a programming configuration module, configured to configure unit programming information according to the programming information, wherein the unit programming information is a programming instruction configured according to regional repetitive characteristics of the programming information; An address configuration module, configured to configure change address information capable of traversing all addresses in the flash memory chip; A programming module, configured to program the flash memory chip according to the changed address information and the unit programming information; The step of programming the flash memory chip according to the changed address information and the unit programming information includes: Setting the starting address, final address and address change interval of the change address information according to the programming information; Taking the starting address as the programming starting point, setting the current address according to the address change interval; Programming the flash memory chip according to the current address and the unit programming information, and periodically querying whether programming of the current address is completed; The programming of the flash memory chip is ended when the final address programming is completed.

6. A flash memory chip programming system for programming a flash memory chip, characterized in that: The programming system comprises: a controller, configured to obtain operation information and generate programming information according to the operation information; a volatile control register electrically connected to the controller, configured to obtain the programming information and configure unit programming information according to the programming information, wherein the unit programming information is a programming instruction configured according to the regional repetition characteristics of the programming information, and further configured to configure change address information that can traverse all addresses in the flash memory chip, and to program the flash memory chip according to the change address information and the unit programming information; When the controller generates a programming enable signal, the volatile control register programs the flash memory chip; The step of programming the flash memory chip according to the changed address information and the unit programming information includes: Setting the starting address, final address and address change interval of the change address information according to the programming information; Taking the starting address as the programming starting point, setting the current address according to the address change interval; Programming the flash memory chip according to the current address and the unit programming information, and periodically querying whether programming of the current address is completed; The programming of the flash memory chip is ended when the final address programming is completed.

7. An electronic device, characterized in that: The method comprises a processor and a memory, wherein the memory stores computer-readable instructions. When the computer-readable instructions are executed by the processor, the steps of the method according to any one of claims 1 to 4 are executed.

8. A storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 4 are executed.

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