Semiconductor process equipment and its carrier device

Abstract

An embodiment of the present application provides a semiconductor process equipment and a carrier device thereof. The carrier device is disposed in a process chamber for carrying a wafer, and includes: a carrier plate, a radio frequency structure, and a temperature control structure; the carrier plate is stacked on the radio frequency structure, and the carrier plate is used for carrying the wafer; the bottom of the radio frequency structure is connected to a lifting device and is used to move to a first position under the drive of the lifting to load radio frequency power to the carrier plate; the temperature control structure is disposed at the bottom of the radio frequency structure, and a fluid is contained in the temperature control structure; when the radio frequency structure moves to a second position under the drive of the lifting device, the temperature control structure and the radio frequency structure are stacked, and the radio frequency structure is used to load radio frequency power to the temperature control structure to generate heat by the fluid to adjust the temperature of the carrier plate. The embodiment of the present application not only greatly reduces the manufacturing difficulty of the electrostatic chuck in the prior art, but also greatly reduces the application and maintenance costs, and greatly improves the consistency and stability of the carrier plate.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing technology. Specifically, this application relates to a semiconductor process equipment and its carrier device. Background Art

[0002] Currently, in the field of semiconductor processing technology, an electrostatic chuck is one of the most common substrate structures in a process chamber. Through the electrostatic chuck, functions such as adsorbing a wafer, applying radio frequency power, and controlling temperature can be achieved. During the process, by applying a voltage to the electrodes inside the electrostatic chuck, charges accumulate on the surface of the electrostatic chuck and the electrodes to generate an adsorption force, so that the electrostatic chuck can adsorb the wafer and maintain the stability of the wafer's position during the process. An RF electrode layer structure and a heating wire structure can also be arranged inside the electrostatic chuck, so that the electrostatic chuck can achieve the functions of applying RF power to the wafer and controlling temperature. In the prior art, due to the need to arrange a heating wire structure inside the electrostatic chuck, the manufacturing process of the electrostatic chuck is difficult, and it is difficult to ensure the consistency of the electrostatic chuck. Moreover, if the heating wire structure is unevenly arranged, it is easy to cause uneven heat distribution at different positions of the electrostatic chuck, which may also lead to the fragmentation of the electrostatic chuck. Summary of the Invention

[0003] In view of the shortcomings of the existing methods, this application proposes a semiconductor process equipment and its carrier device to solve the technical problems existing in the prior art, such as the high manufacturing difficulty of the electrostatic chuck, and the poor consistency and stability of the electrostatic chuck.

[0004] In a first aspect, an embodiment of this application provides a carrier device for a semiconductor process equipment, which is arranged in a process chamber for carrying a wafer, and includes: a carrier plate, an RF structure, and a temperature control structure; the carrier plate is stacked on the RF structure, and the carrier plate is used for carrying the wafer; the bottom of the RF structure is connected to a lifting device and is used to move to a first position under the drive of the lifting device to apply RF power to the carrier plate; the temperature control structure is arranged at the bottom of the RF structure, and a fluid is contained in the temperature control structure; when the RF structure moves to a second position under the drive of the lifting device, the temperature control structure is stacked with the RF structure, and the RF structure is used to apply RF power to the temperature control structure to generate heat by the fluid to adjust the temperature of the carrier plate.

[0005] In an embodiment of this application, the RF structure includes an electrode assembly and an insulating sleeve. The top surface of the electrode assembly is in contact with the bottom surface of the carrier plate, and the insulating sleeve covers the bottom surface and the periphery of the electrode assembly.

[0006] In an embodiment of the present application, the temperature control structure includes a heater and a connecting pipe. An accommodation cavity is formed in the heater, and the connecting pipe is communicated with the accommodation cavity for introducing magnetic fluid or gas into the accommodation cavity. The radio frequency structure is used to load radio frequency power onto the heater to generate a capacitive coupling effect with the magnetic fluid or an ionization effect with the gas.

[0007] In an embodiment of the present application, the carrying device further includes a controller. The controller is electrically connected to the radio frequency structure and the temperature control structure, and is used to control the radio frequency power loaded by the radio frequency structure onto the temperature control structure, and / or control the flow rate of the fluid introduced into the temperature control structure, so as to adjust the temperature of the carrying plate.

[0008] In an embodiment of the present application, the electrode assembly includes an electrode plate and electrode sheets. A plurality of the electrode sheets are arranged on the bottom surface of the electrode plate, and a plurality of channels are formed on the top surface of the temperature control structure for accommodating the plurality of electrode sheets.

[0009] In an embodiment of the present application, a plurality of uniformly distributed heat conduction channels are formed on the electrode plate for introducing gas to conduct heat between the electrode plate and the carrying plate.

[0010] In an embodiment of the present application, the heat conduction channel includes a through section and a non-through section which are communicated. The through section penetrates through the thickness direction of the electrode plate, and the non-through section is formed at the top of the electrode plate.

[0011] In an embodiment of the present application, the heat conduction channel is in a ring structure, and a plurality of heat conduction channels are arranged in a nested manner around the axis of the electrode plate. The through section and the non-through section are alternately arranged in sequence along the circumferential direction of the heat conduction channel.

[0012] In an embodiment of the present application, a plurality of the electrode sheets are uniformly and spacedly arranged along the circumferential direction of the heat conduction channel to enclose a plurality of ring structures with axial notches, and a plurality of the electrode sheets are all located at the bottom of the non-through section.

[0013] In an embodiment of the present application, a plurality of the channels are all annular grooves and are respectively arranged in one-to-one correspondence with a plurality of the heat conduction channels.

[0014] In an embodiment of the present application, the temperature control structure further includes support columns. The heater is in a ring structure and is grounded to the bottom wall of the process chamber through a plurality of the support columns. The connecting pipe is arranged inside the support columns.

[0015] In an embodiment of the present application, the carrier device further includes a telescopic sleeve structure. The top end of the telescopic sleeve structure passes through the hollow part of the heater and is insulated and sealedly connected to the electrode assembly. And the insulating sleeve surrounds the outer periphery of the top end of the telescopic sleeve structure. The bottom end of the telescopic sleeve structure is sealedly connected to the bottom wall of the process chamber.

[0016] In an embodiment of the present application, the carrier device further includes a current introduction component, a pipeline component and a radio frequency introduction rod arranged in the telescopic sleeve structure. One end of the current introduction component is electrically connected to the adsorption electrode in the carrier plate and is sealed and insulated from the electrode assembly. The other end is connected to a DC power supply; one end of the pipeline component is respectively connected to the heat transfer flow channel of the carrier plate and the heat conduction flow channel of the electrode assembly, and the other end is connected to a gas source; one end of the radio frequency introduction rod is connected to the electrode assembly, and the other end is connected to a radio frequency power supply.

[0017] In a second aspect, an embodiment of the present application provides a semiconductor process equipment, including a process chamber and a carrier device as provided in the first aspect.

[0018] The beneficial technical effects brought by the technical solution provided by the embodiment of the present application are:

[0019] The carrier device provided by the embodiment of the present application includes a carrier plate, a radio frequency structure and a temperature control structure. The carrier plate is stacked on the radio frequency structure. The temperature control structure is separately designed from the radio frequency structure. The radio frequency structure can be lifted by a lifting device, so that the radio frequency structure can drive the carrier plate to move to a first position to load radio frequency power on the carrier plate to perform a process; and drive the carrier plate to move to a second position. At this time, the carrier plate is in a wafer transfer state, and the radio frequency structure loads radio frequency power on the temperature control structure to make the fluid in the temperature control structure generate heat, realizing the control of the temperature of the carrier plate. With the above design, the radio frequency structure of the present application can realize two functions of heating and radio frequency power introduction. Compared with the prior art, it is not necessary to add an electric heating wire structure inside the carrier plate. This can not only greatly reduce the manufacturing difficulty of the electrostatic chuck in the prior art, thereby greatly reducing the application and maintenance costs; and because the temperature control structure is arranged at the bottom of the carrier plate, the overall temperature of the carrier plate can be made more uniform through the temperature control structure, thereby greatly improving the consistency and stability of the carrier plate; and because there is no need to set an electric heating wire in the carrier plate, the internal use space of the carrier plate can be greatly increased.

[0020] Additional aspects and advantages of the present application will be given in part in the following description, which will become apparent from the following description, or can be understood through the practice of the present application. Description of the Drawings

[0021] The above and / or additional aspects and advantages of the present application will become apparent and readily understood from the following description of embodiments in conjunction with the accompanying drawings, where:

[0022] Figure 1 FIG. 4 is a schematic cross-sectional view of a carrier device cooperating with a process chamber provided by an embodiment of the present application;

[0023] Figure 2 FIG. 8 is a schematic cross-sectional view of a radio frequency structure cooperating with a telescopic sleeve structure provided by an embodiment of the present application;

[0024] Figure 3 FIG. 12 is a schematic cross-sectional view of a radio frequency structure cooperating with a temperature control structure provided by an embodiment of the present application;

[0025] Figure 4 FIG. 16 is a top view schematic diagram of an electrode plate provided by an embodiment of the present application;

[0026] Figure 5 FIG. 20 is a top view schematic diagram of a heater provided by an embodiment of the present application;

[0027] Figure 6 FIG. 24 is a top view schematic diagram of multiple electrode plates cooperating with each other provided by an embodiment of the present application;

[0028] Figure 7 FIG. 28 is a schematic cross-sectional view of a carrier plate provided by an embodiment of the present application. Detailed Embodiments

[0029] The present application will be described in detail below. Examples of embodiments of the present application are shown in the accompanying drawings, where the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. In addition, if a detailed description of the known art is unnecessary for showing the features of the present application, it will be omitted. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application and should not be construed as limiting the present application.

[0030] Those skilled in the art of the present technology can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as the general understanding of those of ordinary skill in the art to which the present application belongs. It should also be understood that terms such as those defined in a general dictionary should be understood to have a meaning consistent with the meaning in the context of the prior art, and will not be interpreted in an idealized or overly formal sense unless specifically defined as here.

[0031] The technical solutions of the present application and how the technical solutions of the present application solve the above technical problems will be described in detail below with specific embodiments.

[0032] An embodiment of the present application provides a carrier device for a semiconductor process equipment, which is arranged in a process chamber 101 for carrying wafers. The schematic structural diagram of the carrier device is as follows Figure 1 shown, including: a carrier plate 1, a radio frequency structure 2 and a temperature control structure 3;

[0033] The carrier plate 1 is stacked on the radio frequency structure 2, and the carrier plate 1 is used for carrying wafers; the bottom of the radio frequency structure 2 is connected to a lifting device, and is used to move to a first position under the drive of the lifting device to load radio frequency power to the carrier plate 1;

[0034] The temperature control structure 3 is arranged at the bottom of the radio frequency structure 2, and a fluid is contained in the temperature control structure 3; when the radio frequency structure 2 moves to a second position under the drive of the lifting device, the temperature control structure 3 is stacked with the radio frequency structure 2, and the radio frequency structure 2 is used to load radio frequency power to the temperature control structure 3 to generate heat of the fluid to adjust the temperature of the carrier plate 1.

[0035] As Figure 1 shown, the carrier device is arranged in the process chamber 101 of the semiconductor process equipment for carrying wafers. The carrier device may include a carrier plate 1, a radio frequency structure 2 and a temperature control structure 3. The top surface of the carrier plate 1 is used for carrying wafers, and the carrier plate 1 is arranged above the radio frequency structure 2, for example, pressed on the radio frequency structure 2 by a retaining ring, but the embodiment of the present application is not limited thereto. The bottom of the radio frequency structure 2 is connected to a lifting device, and the lifting device can drive the radio frequency structure 2 and the carrier plate 1 to rise to a first position so that the wafer is in a process position for processing. The radio frequency structure 2 is connected to a matcher 102 and a radio frequency power supply 103 for loading radio frequency power to the carrier plate 1. The temperature control structure 3 may adopt an annular structure, and a fluid is introduced into the temperature control structure 3. When the radio frequency structure 2 moves to a second position under the drive of the lifting device, that is, the radio frequency structure 2 and the carrier plate 1 both descend to facilitate wafer transfer. At this time, the radio frequency structure 2 may be stacked with the temperature control structure 3, and the radio frequency structure 2 may load radio frequency power to the temperature control structure 3 so that the fluid in the temperature control structure 3 generates heat to heat the carrier plate, thereby realizing the adjustment of the temperature of the carrier plate 1.

[0036] The carrier device provided by the embodiment of the present application includes a carrier plate, a radio frequency structure, and a temperature control structure. The carrier plate is stacked on the radio frequency structure, and the temperature control structure is separately designed from the radio frequency structure. The radio frequency structure can be lifted by a lifting device, so that the radio frequency structure can drive the carrier plate to move to a first position to load radio frequency power on the carrier plate to perform a process; and drive the carrier plate to move to a second position. At this time, the carrier plate is in a wafer transfer state, and the radio frequency structure loads radio frequency power on the temperature control structure to generate heat in the fluid in the temperature control structure, thereby realizing the control of the temperature of the carrier plate. With the above design, the radio frequency structure of the present application can realize two functions of heating and radio frequency power introduction. Compared with the prior art, there is no need to add a heating wire structure inside the carrier plate. This can not only greatly reduce the manufacturing difficulty of the electrostatic chuck in the prior art, thereby greatly reducing the application and maintenance costs; moreover, since the temperature control structure is arranged at the bottom of the carrier plate, the overall temperature of the carrier plate can be made relatively uniform through the temperature control structure, thereby greatly improving the consistency and stability of the carrier plate; and since there is no need to arrange a heating wire inside the carrier plate, the internal use space of the carrier plate can be greatly increased.

[0037] It should be noted that the embodiment of the present application does not limit the specific type of the fluid, as long as the fluid can generate heat when the radio frequency structure 2 loads radio frequency power on the temperature control structure 3. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust and set according to the actual situation.

[0038] In an embodiment of the present application, as Figure 1 and Figure 2 shown, the radio frequency structure 2 includes an electrode assembly 21 and an insulating sleeve 22. The top surface of the electrode assembly 21 is in contact with the bottom surface of the carrier plate 1, and the insulating sleeve 22 covers the bottom surface and the periphery of the electrode assembly 21.

[0039] As Figure 1 and Figure 2As shown, the electrode assembly 21 can be made of a metal material and have a disc-shaped structure. The top surface of the electrode assembly 21 is used to mount the carrier plate 1. The insulating sleeve 22 can be made of ceramic material or glass material. The insulating sleeve 22 can be an integral structure to cover the bottom surface and the periphery of the electrode assembly 21; or the insulating sleeve 22 can also be a split structure, and a labyrinth structure needs to be designed between any two segments to prevent the leakage of radio frequency radiation, which may cause the lower part of the chamber to glow or spark. For example, the insulating sleeve 22 is connected to the electrode assembly 21 by metal screws, but a protective cap structure made of ceramic material must be added at the position where the metal screws contact the vacuum environment to isolate the direct contact between the metal screws and the process gas in the process chamber 101, thus preventing glow. In practical applications, when the radio frequency structure 2 rises to the first position, the insulating sleeve 22 cooperates with the inner lining of the process chamber 101 for sealing to prevent the lower chamber in the process chamber 101 from glowing, that is, the insulating sleeve 22 can prevent the radio frequency leakage at the bottom of the radio frequency structure 2, which may cause the process gas to glow; and when the radio frequency structure 2 descends to the second position, the radio frequency structure 2 moves downward close to the temperature control structure 3, and the capacitance between the radio frequency structure 2 and the temperature control structure 3 increases. Most of the radio frequency power is coupled into the temperature control structure 3 through the insulating sleeve 22, so that the fluid in the temperature control structure 3 generates heat. With the above design, not only can the lower chamber of the process chamber 101 be prevented from glowing, thereby improving the process stability and safety of the embodiment of the present application; but also the radio frequency power loaded by the radio frequency structure 2 to the temperature control structure 3 can be increased, thereby improving the temperature control efficiency of the temperature control structure 3. It should be noted that the specific material of the insulating sleeve 22 is not limited in the embodiment of the present application, as long as the above requirements can be met. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust and set it according to the actual situation.

[0040] In an embodiment of the present application, as Figures 1 to 3 shown, the temperature control structure 3 includes a heater 31 and a connecting pipe 32. A receiving cavity is formed in the heater 31, and the connecting pipe 32 is communicated with the receiving cavity and is used to introduce magnetic fluid or gas into the receiving cavity. The radio frequency structure 2 loads radio frequency power to the heater 31 to generate a capacitive coupling effect with the magnetic fluid or an ionization effect with the gas.

[0041] As Figures 1 to 3As shown, the heater 31 can adopt an annular structure made of a metal substrate to increase the contact area with the radio frequency structure 2, thereby improving the heating efficiency of the heater 31. However, the specific shape of the heater 31 is not limited in the embodiments of the present application. A receiving cavity can be formed in the heater 31. The connecting pipe 32 is arranged at the bottom of the heater 31, and a fluid such as magnetic fluid or gas can be introduced into the receiving cavity to generate heat under the action of radio frequency power. Specifically, when the radio frequency structure 2 rises to the first position, the radio frequency structure 2 is far away from the heater 31, so that the capacitance between the two becomes smaller. The radio frequency power on the radio frequency structure 2 is loaded into the plasma in the process chamber 101 through the carrier plate 1 in a capacitive coupling manner, thereby realizing the function of loading radio frequency power on the carrier plate 1; when the radio frequency structure 2 descends to the second position, since the process chamber 101 stops inputting process gas, the pressure in the process chamber 101 drops to the background pressure (i.e., a low-vacuum environment, at this time the pressure in the process chamber 101 is much smaller than the pressure during the process); according to the Paschen principle, it is difficult to initiate plasma in a high-vacuum chamber environment. Therefore, the radio frequency power of the radio frequency structure 2 cannot return to the ground of the process chamber 101 through the plasma, so that most of the radio frequency power is capacitively coupled with the magnetic fluid in the heater 31 or ionizes the gas in the heater 31, so that the fluid in the heater 31 generates heat, thereby realizing the purpose of controlling the temperature of the carrier plate 1. With the above design, the manufacturing and application costs of the heater 31 can be greatly reduced, and the structure of the heater 31 is simple to reduce the failure rate, and the applicability and scope of application can also be greatly improved.

[0042] It should be noted that the embodiments of the present application do not limit the specific type of gas introduced into the heater 31, as long as the gas can be ionized under radio frequency power. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust and set according to the actual situation.

[0043] In an embodiment of the present application, as Figures 1 to 3As shown, the carrier device further includes a controller (not shown in the figure). The controller is electrically connected to the radio frequency structure 2 and the temperature control structure 3, and is used to control the radio frequency power loaded by the radio frequency structure 2 to the temperature control structure 3, and / or control the flow rate of the fluid introduced into the temperature control structure 3, so as to adjust the temperature of the carrier plate 1. Specifically, the controller can adopt a single-chip microcomputer and is electrically connected to the radio frequency structure 2 or the temperature control structure 3, and realizes the purpose of adjusting the temperature of the carrier plate 1 by controlling the working states of the two. For example, the controller controls the output power of the radio frequency power supply 103, so that the radio frequency power loaded by the radio frequency structure 2 changes, thereby realizing the purpose of controlling the heating power of the heater 31; or the controller can also control the on-off between the radio frequency power supply 103 and the radio frequency structure 2 to control the heating power of the heater 31; or, the controller can control the flow rate and density of the fluid introduced into the heater 31 through the connecting pipe 32 to adjust the volume and concentration of the fluid in the heater 31, thereby realizing the control of the heating power of the heater 31. With the above design, not only can the control efficiency of the embodiment of the present application be improved, but also the consistency and stability of the output power can be better ensured, thereby improving the consistency and stability of the temperature of the carrier plate 1.

[0044] It should be noted that the specific type of the controller is not limited in the embodiment of the present application. For example, the controller can adopt a programmable controller or a host computer of a semiconductor process device. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust and set according to the actual situation.

[0045] In an embodiment of the present application, as Figures 1 to 3 shown, the electrode assembly 21 includes an electrode plate 211 and electrode pieces 212. A plurality of electrode pieces 212 are arranged on the bottom surface of the electrode plate 211. A plurality of channels 311 are formed on the top surface of the temperature control structure 3 for accommodating the plurality of electrode pieces 212. Specifically, the electrode plate 211 is a circular plate-like structure made of a metal material. A plurality of electrode pieces 212 are integrally arranged on the bottom surface of the electrode plate 211, and the plurality of electrode pieces 212 can extend along the axial direction of the electrode plate 211. The insulating sleeve 22 can be sleeved on the bottom surface and the periphery of the electrode plate 211 and completely cover the electrode pieces 212. Since the electrode plate 211 is attached to the top surface of the temperature control structure 3 through the insulating sleeve 22, a plurality of channels 311 can be formed on the top surface of the heater 31 to respectively accommodate the plurality of electrode pieces 212. With the above design, the electrode pieces 212 mainly play a role in increasing the capacitive coupling between the electrode plate 211 and the heater 31. When the radio frequency structure 2 descends to the second position (at this time, the wafer will be transferred out of the process chamber 101), the electrode plate 211 is close to the heater 31, and the electrode pieces 212 penetrate into the heater 31 through the channels 311 on the heater 31, increasing the capacitance between the electrode plate 211 and the heater 31, thereby increasing the efficiency of radio frequency power coupling to the heater 31, and further improving the heating power of the heater 31.

[0046] It should be noted that the connection manner between the electrode sheet 212 and the electrode plate 211 is not limited in the implementation of this application. For example, a split structure is adopted between the two, and a welding method is used for fixed connection. Therefore, the embodiments of this application are not limited thereto, and those skilled in the art can adjust the settings according to the actual situation.

[0047] In an embodiment of the present application, as Figures 1 to 4 shown, a plurality of uniformly distributed heat conduction channels 23 are formed on the electrode plate 211 for introducing gas to conduct heat between the electrode plate 211 and the carrier plate 1. Specifically, a plurality of uniformly distributed heat conduction channels 23 can be formed on the electrode plate 211, and the plurality of heat conduction channels 23 can be connected to each other. When gas is introduced into any one of the heat conduction channels 23, gas can be introduced into each of the heat conduction channels 23. In actual application, the gas in the heat conduction channel 23 can be evenly diffused between the radio frequency structure 2 and the carrier plate 1 to conduct the heat on the radio frequency structure 2 to the carrier plate 1, so as to realize the adjustment of the temperature of the carrier plate 1. When it is necessary to cool the carrier plate 1, the controller can control the radio frequency power supply 103 to be disconnected, and cool the carrier plate 1 through the gas in the heat conduction channel 23, so that the temperature adjustment of the carrier plate 1 is more flexible. However, the specific number and arrangement manner of the heat conduction channels 23 are not limited in the embodiments of this application, and those skilled in the art can adjust the settings according to the actual situation.

[0048] In an embodiment of the present application, as Figure 3 and Figure 4 shown, the heat conduction channel 23 includes a through section 231 and a non-through section 232 which are connected. The through section 231 is arranged through the thickness direction of the electrode plate 211, and the non-through section 232 is formed on the top of the electrode plate 211. Specifically, the heat conduction channel 23 includes a through section 231 and a non-through section 232 which are connected. The through section 231 is arranged through the thickness direction of the electrode plate 211, and the non-through section 232 can be a groove formed on the top surface of the electrode plate 211, that is, the non-through section 232 is formed on the top of the electrode plate 211. With the above design, the heat conduction channel 23 can not only guide the gas between the electrode plate 211 and the carrier plate 1, but also guide the gas between the electrode plate 211 and the heater 31, thereby greatly increasing the heat conduction efficiency between the electrode plate 211 and the heater 31, and further improving the heating efficiency. However, the specific structure of the heat conduction channel 23 is not limited in the embodiments of this application. For example, forming a plurality of through holes at the bottom of the non-through section 232 can also achieve the above function. Therefore, the embodiments of this application are not limited thereto, and those skilled in the art can adjust the settings according to the actual situation.

[0049] In an embodiment of the present application, as Figure 4 andFigure 5 As shown, the heat-conducting runner 23 has an annular structure, and a plurality of heat-conducting runners 23 are nested with each other around the axis of the electrode plate 211, and the through sections 231 and the non-through sections 232 are alternately arranged in sequence along the circumferential direction of the heat-conducting runner 23. Specifically, the two heat-conducting runners 23 are both annular structures, and the two heat-conducting runners 23 are nested with each other around the axis of the electrode plate 211 and are evenly arranged along the axial direction of the electrode plate 211, so as to improve the heat conduction uniformity. Each heat-conducting runner 23 includes three through sections 231 and three non-through sections 232, and the through sections 231 and the non-through sections 232 are alternately arranged in sequence along the circumferential direction of the heat-conducting runner 23, so as to further improve the heat conduction uniformity. Optionally, a branch runner is connected between any two heat-conducting runners 23, and the branch runner extends along the radial direction of the electrode plate 211 and is specifically a groove formed on the top surface of the electrode plate 211, so as to realize the connection of a plurality of heat-conducting runners 23. However, the embodiments of the present application do not limit the specific number and arrangement mode of the heat-conducting runners 23, nor the specific number of the through sections 231 and the non-through sections 232 included in each heat-conducting runner 23. Those skilled in the art can adjust the settings according to the actual situation.

[0050] In an embodiment of the present application, as Figures 3 to 6 shown, a plurality of electrode sheets 212 are evenly and spacedly arranged along the circumferential direction of the heat-conducting runner 23 to enclose a plurality of ring structures with axial notches, and a plurality of electrode sheets 212 are all located at the bottom of the non-through section 232. Specifically, the electrode sheet 212 is specifically a rectangular sheet structure and has a certain curvature. A plurality of electrode sheets 212 are spacedly arranged at the bottom of the electrode plate 211 and are spacedly arranged along the circumferential direction of the heat-conducting runner 23 to form a ring structure with an axial opening, specifically referring to as Figure 6 shown. Further, the specific number of the electrode sheets 212 is six, and they are all arranged at the bottom of the non-through section 232 to form two circular ring structures at the bottom of the electrode plate 211, specifically referring to as Figure 6 shown. By adopting the above design, not only can the heating efficiency of the heater 31 be improved, but also since any two adjacent electrode sheets 212 are spacedly arranged, the gas flow can be made smoother, thereby further improving the heat conduction efficiency. However, the embodiments of the present application do not limit the specific number and arrangement mode of the electrode sheets 212. For example, the number of the electrode sheets 212 can be correspondingly set with the number of the non-through sections 232. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to the actual situation.

[0051] In an embodiment of the present application, as Figures 3 to 6As shown, multiple channels 311 are all annular grooves and are respectively arranged in one-to-one correspondence with multiple heat conduction channels 23. Specifically, two channels 311 are arranged on the top surface of the heater 31, and both of the two channels 311 are annular grooves formed on the top surface of the heater 31 for accommodating the sleeve structure surrounded by multiple electrode sheets 212. With the above design, it is easier for the multiple electrode sheets 212 to enter the channels 311, thus avoiding mechanical interference. However, the specific number of the channels 311 in the embodiments of the present application is not limited, as long as it is arranged in correspondence with the number of the heat conduction channels 23.

[0052] In an embodiment of the present application, as Figure 1 and Figure 3 shown, the temperature control structure 3 further includes support columns 33. The heater 31 is of an annular structure and is grounded to the bottom wall of the process chamber 101 through the multiple support columns 33, and the connecting pipe 32 is arranged inside the support columns 33. Specifically, the heater 31 can specifically adopt an annular structure, and the hollow part is used for the lifting device to be connected to the radio frequency structure 2, and for components such as the current introduction component, pipeline component, and radio frequency introduction rod 7 in subsequent embodiments to pass through and be connected to the radio frequency structure 2 and the carrier plate 1. The support columns 33 can be made of a rod-shaped structure of metal material. The multiple support columns 33 are evenly distributed at the bottom of the heater 31 and the bottom ends are grounded to the bottom wall of the process chamber 101, so as to realize the support of the heater 31 and make the heater 31 and the process chamber 101 maintain the ground potential, so that the radio frequency power of the radio frequency structure 2 can be grounded through the support columns 33. With the above design, the structure of the embodiments of the present application is simple, thus greatly reducing the design and manufacturing costs.

[0053] In an embodiment of the present application, as Figures 1 to 3 shown, the carrying device further includes a telescopic sleeve structure 4. The top end of the telescopic sleeve structure 4 passes through the hollow part of the heater 31 and is insulated and sealedly connected to the electrode assembly 21, and the insulating sleeve 22 surrounds the outer periphery of the top end of the telescopic sleeve structure 4. The bottom end of the telescopic sleeve structure 4 is sealedly connected to the bottom wall of the process chamber 101.

[0054] As Figures 1 to 3As shown, the telescopic sleeve structure 4 includes an insulating ring 41 and a corrugated pipe 42. The top end of the corrugated pipe 42 is connected to the bottom end of the radio frequency structure 2 through the insulating ring 41. For example, the insulating ring 41 is connected to the bottom end of the electrode plate 211, and the bottom end of the corrugated pipe 42 is hermetically connected to the bottom wall of the process chamber 101. The corrugated pipe 42 can expand and contract with the lifting of the radio frequency structure 2, and also has the function of shielding and adsorbing the induced current and radio frequency current. The insulating ring 41 is made of ceramic material, for example, and is located between the bottom surface of the electrode plate 211 and the top end of the corrugated pipe 42, so as to achieve the functions of sealing the vacuum and preventing the leakage of radio frequency power. Specifically, both the upper and lower surfaces of the insulating ring 41 are metallized with ceramic. The top surface of the insulating ring 41 is welded to the bottom surface of the electrode plate 211, and the bottom surface of the insulating ring 41 is welded to the top end of the corrugated pipe 42 through a vacuum flange. With the above design, the radio frequency structure 2 can be hermetically connected to the bottom wall of the process chamber 101, and can be lifted and lowered in the process chamber 101, and it can also prevent the radio frequency structure 2 from causing the process gas to glow in the lower chamber of the process chamber 101, thereby improving the process stability and process yield of the embodiment of the present application. However, the embodiment of the present application does not limit the specific implementation manner of the telescopic sleeve structure 4, and those skilled in the art can adjust and set it according to the actual situation.

[0055] In an embodiment of the present application, as Figures 1 to 3 、 Figure 7 shown, the carrying device further includes a current introduction component, a pipeline component and a radio frequency introduction rod 7 arranged in the telescopic sleeve structure 4. One end of the current introduction component is electrically connected to the adsorption electrode 11 in the carrier plate 1, and is hermetically and insulated from the electrode assembly 21, and the other end is connected to a DC power supply; one end of the pipeline component is respectively connected to the heat transfer flow channel of the carrier plate 1 and the heat conduction flow channel 23 of the electrode assembly 21, and the other end is connected to a gas source; one end of the radio frequency introduction rod 7 is connected to the electrode assembly 21, and the other end is connected to a radio frequency power supply 103.

[0056] As Figures 1 to 3 、 Figure 7As shown in the figure, the carrier plate 1 is made of ceramic material and is arranged on the radio frequency structure 2 through a compression ring. An adsorption electrode 11 is arranged inside the carrier plate 1, and the adsorption electrode 11 has a positive and negative dual-electrode structure. The material of the adsorption electrode 11 can be alumina or aluminum nitride material, so that the carrier plate 1 itself can realize the function of adsorbing the wafer. The current introduction component is arranged inside the telescopic sleeve structure 4, and it includes a vacuum electrical introduction component 51 (Feed-through) and a DC cable 52. The vacuum electrical introduction component 51 penetrates through the electrode plate 211 and is connected to the adsorption electrode 11 at the top. One end of the DC cable 52 is connected to the vacuum electrical introduction component 51, and the other end is connected to a DC power supply to introduce a DC voltage into the adsorption electrode 11. The ceramic part of the vacuum electrical introduction component 51 insulates the adsorption electrode 11 of the carrier plate 1 from the ground, prevents the leakage of adsorption current and radio frequency current, and also realizes the vacuum sealing function, that is, a sealed and insulated connection is formed between the current introduction component and the electrode component 21. A plurality of bumps 12 are evenly distributed on the top surface of the carrier plate 1 for carrying the back surface of the wafer, so that a heat transfer flow channel is formed between the top surface of the carrier plate 1 and the back surface of the wafer. The pipeline component is arranged inside the telescopic sleeve structure 4, and it includes a first pipeline 61 and a second pipeline 62. The first pipeline 61 passes through the electrode plate 211 of the radio frequency structure 2 and is hermetically connected to the carrier plate 1 for guiding gas into the heat transfer flow channel; the second pipeline 62 is hermetically connected to the electrode plate 211 of the electrode component 21 for guiding gas into the heat conduction flow channel 23. Both the first pipeline 61 and the second pipeline 62 are connected to a gas source. The radio frequency introduction rod 7 is arranged inside the telescopic sleeve structure 4, and the top end is connected to the electrode plate 211 of the electrode component 21. The bottom end of the radio frequency introduction rod 7 is connected to a matcher 102, and the matcher 102 is connected to a radio frequency power supply 103 through a coaxial cable. The matcher 102, the radio frequency power supply 103 and the process chamber 101 form an overall radio frequency circuit. By adjusting the capacitance value inside the matcher 102, the impedance of the process chamber 101 can be matched to maximize the output power of the radio frequency power supply 103. With the above design, the structure of the embodiment of the present application is simple, thus greatly reducing the design and manufacturing costs; and since the current introduction component and the radio frequency introduction rod 7 are both arranged inside the telescopic sleeve structure 4, the leakage of adsorption current and radio frequency current can be prevented, thereby further reducing the manufacturing difficulty and cost of the heater 31. Optionally, a thermocouple 8 can be arranged inside the telescopic sleeve structure 4. The top of the thermocouple 8 is welded to the electrode plate 211 and protrudes from the top surface of the electrode plate 211, so that the top end of the thermocouple 8 contacts the carrier plate 1 to measure the temperature of the carrier plate 1 and provide a basis for the temperature adjustment of the carrier plate 1.

[0057] Based on the same inventive concept, an embodiment of the present application provides a semiconductor process equipment, including a process chamber and a carrier device provided in each of the above embodiments.

[0058] Applying the embodiments of the present application can at least achieve the following beneficial effects:

[0059] The carrier device provided by the embodiments of the present application includes a carrier plate, a radio frequency structure, and a temperature control structure. The carrier plate is stacked on the radio frequency structure, and the temperature control structure is separately designed from the radio frequency structure. The radio frequency structure can be lifted by a lifting device, so that the radio frequency structure can drive the carrier plate to move to a first position to load radio frequency power on the carrier plate to perform a process; and drive the carrier plate to move to a second position. At this time, the carrier plate is in a wafer transfer state, and the radio frequency structure loads radio frequency power on the temperature control structure to generate heat in the fluid in the temperature control structure, realizing the control of the temperature of the carrier plate. With the above design, the radio frequency structure of the present application can realize two functions of heating and radio frequency power introduction. Compared with the prior art, there is no need to add a heating wire structure inside the carrier plate, which can not only greatly reduce the manufacturing difficulty of the electrostatic chuck in the prior art, thereby greatly reducing the application and maintenance costs; moreover, since the temperature control structure is arranged at the bottom of the carrier plate, the overall temperature of the carrier plate can be made relatively uniform through the temperature control structure, thereby greatly improving the consistency and stability of the carrier plate; and since there is no need to arrange a heating wire inside the carrier plate, the internal use space of the carrier plate can also be greatly increased.

[0060] It can be understood that the above embodiments are only exemplary embodiments adopted to illustrate the principle of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

[0061] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention.

[0062] The terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, the meaning of "a plurality" is two or more.

[0063] In the description of the present application, it should be noted that unless otherwise clearly specified and defined, the terms "installed", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0064] The above are only some embodiments of the present application. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present application, several improvements and refinements can be made, and these improvements and refinements should also be regarded as the protection scope of the present application.

Claims

1. A carrier device for a semiconductor process equipment, which is arranged in a process chamber for carrying a wafer, and is characterized in that, Including: A carrier plate, a radio frequency structure, and a temperature control structure; The carrier plate is stacked on the radio frequency structure, and the carrier plate is used to carry the wafer; The bottom of the radio frequency structure is connected to a lifting device and is used to move to a first position under the drive of the lifting device to load radio frequency power to the carrier plate; The temperature control structure is arranged at the bottom of the radio frequency structure, and a fluid is contained in the temperature control structure; when the radio frequency structure moves to a second position under the drive of the lifting device, the temperature control structure is stacked with the radio frequency structure, and the radio frequency structure is used to load radio frequency power to the temperature control structure to generate heat from the fluid to adjust the temperature of the carrier plate.

2. The carrying device according to claim 1, characterized in that The radio frequency structure includes an electrode assembly and an insulating sleeve. The top surface of the electrode assembly contacts the bottom surface of the carrier plate, and the insulating sleeve covers the bottom surface and the periphery of the electrode assembly.

3. The bearing device according to claim 2, wherein The temperature control structure includes a heater and a connecting pipe. An accommodating cavity is formed in the heater, and the connecting pipe is communicated with the accommodating cavity and is used to introduce magnetic fluid or gas into the accommodating cavity. The radio frequency structure is used to load radio frequency power to the heater to generate a capacitive coupling effect with the magnetic fluid or an ionization effect with the gas.

4. The carrying device according to claim 3, characterized in that The carrying device further includes a controller, and the controller is electrically connected to the radio frequency structure and the temperature control structure and is used to control the radio frequency power loaded by the radio frequency structure to the temperature control structure and / or control the flow rate of the fluid introduced into the temperature control structure to adjust the temperature of the carrier plate.

5. The bearing device according to claim 3, characterized in that, The electrode assembly includes an electrode plate and electrode sheets. A plurality of the electrode sheets are arranged on the bottom surface of the electrode plate, and a plurality of channels are formed on the top surface of the temperature control structure for accommodating the plurality of electrode sheets.

6. The carrier device according to claim 5, wherein A plurality of uniformly distributed heat conduction channels are formed on the electrode plate and are used to introduce gas to conduct heat between the electrode plate and the carrier plate.

7. The bearing device according to claim 6, characterized in that, The heat conduction channel includes a through section and a non-through section that are communicated. The through section penetrates through the thickness direction of the electrode plate, and the non-through section is formed at the top of the electrode plate.

8. The bearing device according to claim 7, characterized in that, The heat conduction channel has an annular structure, and a plurality of heat conduction channels are arranged in a nested manner around the axis of the electrode plate. The through section and the non-through section are alternately arranged in sequence along the circumferential direction of the heat conduction channel.

9. The bearing device according to claim 8, wherein, A plurality of the electrode sheets are uniformly and spaced apart along the circumferential direction of the heat conduction channel to enclose a plurality of ring structures with axial notches, and a plurality of the electrode sheets are all located at the bottom of the non-through section.

10. The bearing device according to claim 9, characterized in that, A plurality of the channels are all annular grooves and are respectively arranged in one-to-one correspondence with a plurality of the heat conduction channels.

11. The bearing device according to claim 3, characterized in that, The temperature control structure further includes support columns. The heater has an annular structure and is grounded to the bottom wall of the process chamber through a plurality of the support columns. The connecting pipe is arranged in the support columns.

12. The carrying device according to claim 11, wherein The carrier device further includes a telescopic sleeve structure. The top end of the telescopic sleeve structure passes through the hollow part of the heater and is insulated and sealed to the electrode assembly. And the insulating sleeve surrounds the outer periphery of the top end of the telescopic sleeve structure. The bottom end of the telescopic sleeve structure is sealed to the bottom wall of the process chamber.

13. The carrier device according to claim 12, characterized in that, The carrier device further includes a current introduction component, a pipeline component and a radio frequency introduction rod arranged in the telescopic sleeve structure. One end of the current introduction component is electrically connected to the adsorption electrode in the carrier plate, and is sealed and insulated from the electrode assembly. The other end is connected to a DC power supply. One end of the pipeline component is respectively connected to the heat transfer flow channel of the carrier plate and the heat conduction flow channel of the electrode assembly, and the other end is connected to a gas source. One end of the radio frequency introduction rod is connected to the electrode assembly, and the other end is connected to a radio frequency power supply.

14. A semiconductor process equipment, characterized in that, It includes a process chamber and the carrier device according to any one of claims 1 to 13.

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