MEMS device, packaging structure thereof, substrate structure and manufacturing method, filter and electronic device

Abstract

The present application relates to a kind of packaging structure, substrate structure and manufacturing method of MEMS device.The packaging structure includes: first substrate, with first opposite surface;Second substrate, with second opposite surface opposite to first opposite surface;Conductive layer, it is arranged in first opposite surface side, and the conductive layer includes bonding layer and first abutment, bonding layer includes the sealing interface facing first opposite surface, and the first abutment is connected with bonding layer in the surface opposite sealing interface of bonding layer;Second abutment, it is arranged in second opposite surface side, and the first abutment and second abutment are electrically connected by being opposite to each other, and second abutment is adapted to be electrically connected with MEMS device, wherein: the packaging structure further includes conducting portion, and conducting portion is electrically connected with conductive layer.The present application also relates to a kind of MEMS device, a kind of filter and a kind of electronic equipment.

Description

Technical Field

[0001] The embodiments of the present invention relate to the semiconductor field, and more particularly to a packaging structure, substrate structure and manufacturing method of a MEMS device, as well as a filter and an electronic device. Background Technology

[0002] With the rapid development of 5G communication technology, the requirements for communication frequency bands are becoming increasingly stringent. Traditional radio frequency filters, limited by their structure and performance, cannot meet the requirements of high-frequency communication. Thin-film bulk acoustic resonators (FBARs), as a novel MEMS device, have advantages such as small size, light weight, low insertion loss, wide bandwidth, and high quality factor, making them well-suited for the upgrading of wireless communication systems and making FBAR technology one of the research hotspots in the field of communication.

[0003] FBAR requires a good seal to prevent corrosion from external environmental factors such as moisture; otherwise, it will lead to frequency shift and performance degradation.

[0004] FBARs can be packaged using a packaging substrate. In this case, conductive vias can pass through the packaging substrate and be electrically connected to the FBAR on the functional substrate via metal bonding structures. However, there are problems with sealing the conductive vias, such as incomplete sealing and excessive size.

[0005] Figure 1 This is a schematic cross-sectional view of the packaging structure of MEMS devices such as FBARs in existing designs. Figure 1 In this configuration, the MEMS device 30 is disposed on the substrate 10 (corresponding to the functional substrate), and the substrate 10 has an abutment portion 40 serving as a bonding metal, which is electrically connected to the electrode leads 20 of the MEMS device. Figure 1 As shown, the contact portion 60 is provided with sealing structures (e.g., metal dams) 41 and 42 to prevent or block moisture that may be present during packaging and subsequent processes from entering the containment space of the MEMS device and thus, for example, contacting the electrodes of the MEMS device.

[0006] Figure 1 The image also shows a substrate 11 (corresponding to a packaging substrate), whose lower surface has an abutment portion 60 as a bonding metal, which is bonded to an abutment portion 40. For example... Figure 1 As shown, the through-hole type conductive portion 80 passes through the substrate 11 and the abutment portion 60 and is electrically connected to the abutment portion 40. For example... Figure 1 As shown, sealing structures 41 and 42 are arranged on both sides of the conduction portion 80 in the horizontal direction.

[0007] like Figure 1As shown, the conductive portion, which utilizes a conductive via, has a via 81 penetrating the entire substrate, a filling metal layer 82 deposited on the sidewalls of the via, and a conductive metal layer 83 deposited on the substrate surface 11B. The metal 82 forms an electrical connection with the contact portion 40, ultimately conducting the signal to the device.

[0008] Therefore, in Figure 1 In the structure shown, the conductive part 80 conducts the signal from the upper surface of the substrate 11 to the lower surface of the substrate 11, and bonds it with the abutment part 40 on the upper surface of the substrate 10 to form a conductive path. However, in the actual process, there may be some gaps in the interface after bonding, which may cause external moisture to enter the cavity between the substrate 11 and the substrate 10, that is, the cavity that houses the MEMS device.

[0009] In addition, to enhance the sealing effect, such as Figure 1 As shown, the sealing structures 41 and 42 are larger in size, that is, wider in the horizontal direction, thus resulting in a larger width of the abutment portion 40, for example in... Figure 1 In the structure shown, the size of the contact portion 40 needs to be, for example, an area of ​​70x80 square micrometers, which directly increases the final structural size of the MEMS device and is not conducive to the miniaturization of the MEMS device. Summary of the Invention

[0010] The present invention is proposed to alleviate or solve at least one of the above-mentioned problems in the prior art.

[0011] According to one aspect of an embodiment of the present invention, a packaging structure for a MEMS device is provided, comprising:

[0012] A first substrate, the first substrate having a first opposing surface and a first non-opposing surface opposite the first opposing surface in the thickness direction of the substrate;

[0013] The second substrate has a second opposing surface and a second non-opposing surface opposite to the second opposing surface in the thickness direction of the substrate, and the surface of the first opposing surface is opposite to the second opposing surface.

[0014] A conductive layer is disposed on one side of the first opposing surface. The conductive layer includes a bonding layer and a first abutting portion. The bonding layer includes a sealing interface facing the first opposing surface. The first abutting portion is connected to the bonding layer on the surface of the bonding layer opposite to the sealing interface.

[0015] The second abutment portion is disposed on one side of the second opposing surface. The first abutment portion and the second abutment portion are electrically connected by engaging with each other. The second abutment portion is adapted to be electrically connected to a MEMS device.

[0016] in:

[0017] The packaging structure also includes a conductive portion, which is electrically connected to the conductive layer.

[0018] Embodiments of the present invention also relate to a substrate structure for a MEMS device, comprising:

[0019] A substrate having a first surface and a second surface opposite to the first surface in the substrate thickness direction;

[0020] A conductive layer is disposed on one side of the first surface, the conductive layer including a sealing interface facing the first surface;

[0021] in:

[0022] The substrate structure further includes a conductive portion, which is electrically connected to the conductive layer.

[0023] Embodiments of the present invention also relate to a method for manufacturing a MEMS device, including the following steps:

[0024] A first substrate is provided, the first substrate having a first opposing surface and a first non-opposing surface opposite to the first opposing surface in the thickness direction of the substrate, a conductive layer is disposed on the first opposing surface, the conductive layer including a bonding layer and a first abutment portion, the bonding layer including a sealing interface facing the first opposing surface, and the first abutment portion being connected to the surface of the bonding layer opposite to the sealing interface.

[0025] A second substrate is provided, the second substrate having a second opposing surface and a second non-opposing surface opposite the second opposing surface in the thickness direction of the substrate, a MEMS device and a second abutment are disposed on the second opposing surface, the first abutment and the second abutment are adapted to be opposed to each other and electrically connected, and the second abutment is adapted to be electrically connected to the MEMS device.

[0026] The first abutment portion and the second abutment portion are joined together to form a receiving space between the first opposing surface and the second opposing surface, and the MEMS device is located within the receiving space.

[0027] The step of providing the first substrate includes:

[0028] A conductive portion is formed, which is electrically connected to the conductive layer.

[0029] Embodiments of the present invention also relate to a MEMS device, including the above-described packaging structure or substrate structure.

[0030] Embodiments of the present invention also relate to a filter, including the above-described packaging structure or substrate structure or MEMS device.

[0031] Embodiments of the present invention also relate to an electronic device, including the filter described above or the packaging structure or substrate structure described above or a MEMS device. Attached Figure Description

[0032] The following description and accompanying drawings will better aid in understanding these and other features and advantages of the various embodiments disclosed herein, wherein the same reference numerals in the drawings always denote the same parts, wherein:

[0033] Figure 1 This is a cross-sectional schematic diagram of the packaging structure of a MEMS device in the prior art;

[0034] Figure 2 A cross-sectional schematic diagram of the packaging structure of a MEMS device according to an exemplary embodiment of the present invention;

[0035] Figures 3A-3H An example is shown Figure 2 The process of fabricating the encapsulation structure in the middle;

[0036] Figure 4-11 This is a cross-sectional schematic diagram of the packaging structure of a MEMS device according to different exemplary embodiments of the present invention. Detailed Implementation

[0037] The technical solution of the present invention will be further described in detail below through embodiments and in conjunction with the accompanying drawings. In this specification, the same or similar reference numerals indicate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the overall inventive concept of the present invention and should not be construed as a limitation thereof. These are only some embodiments of the invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention are within the scope of protection of the present invention.

[0038] First, the reference numerals in the accompanying drawings of this invention are explained as follows:

[0039] 10, 11: Substrate, the optional materials are single-crystal silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond, etc. In the embodiment, the substrate on which the MEMS device, such as FBAR, is disposed is the functional substrate, which is 10 in the embodiment, while the substrate that provides the packaging function is the packaging substrate, which is 11 in the embodiment.

[0040] 11A: In the figure, this is the lower surface of the substrate 11, which is also the bonding surface between the substrate 11 and the bonding layer 71.

[0041] 11B: The upper surface of substrate 11.

[0042] 20: Electrode leads for MEMS devices. Materials can be selected from: molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or composites or alloys of the above metals.

[0043] 30: MEMS devices, such as resonators like FBARs, as well as filters or other acoustic or radio frequency devices, or modules including the above components.

[0044] 40: Bonding metal layer, corresponding to the second abutment portion, disposed on the upper surface of the substrate 10, the material of which may be a thin film or multilayer film of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the above metals or alloys.

[0045] 50: Insulation groove, which can be directly a void groove.

[0046] 60: Bonding metal, disposed in the first abutment part 72, the material may be a thin film or multilayer film of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the above metals or alloys.

[0047] 70: Conductive layer, disposed on the lower surface of substrate 11.

[0048] 71: Bonding layer, which is part of conductive layer 70, is suitable for electrical connection with conductive part 80. It can be a conductive doped semiconductor layer, metal layer, metal multilayer film, conductive compound layer, etc.

[0049] 72: The first abutting part is made of metal. When the bonding layer is also made of metal, the material of the first abutting part may be the same as or different from that of the bonding layer.

[0050] 82: Filler metal layer, which includes metal deposited in the pores of the substrate 11, the material of which may be a thin film or multilayer film of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the above metals or alloys.

[0051] 83: Conductive metal layer, the structure of which includes a thin film or multilayer film of a metal material deposited on the surface 11B of the substrate 11, which may be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the above metals or alloys.

[0052] 81: Hole, which penetrates the substrate 11.

[0053] 80: A conductive portion that penetrates the substrate 11 and is electrically connected to the bonding layer 71. It can enter a portion of the bonding layer 71. The conductive portion can be formed by filling a through-hole with metal 82. The filling metal can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a composite or alloy of these metals. In this invention, the conductive portion is a conductive through-hole, which can be in the form of a solid metal pillar (i.e., a conductive column) or a non-solid metal pillar (i.e., a conductive cylinder). The conductive portion 80 includes a through-hole 81 penetrating the substrate 11 (see, for example, [reference needed]). Figure 3G ) and the fill metal 82 located within the through hole 81 (see, for example, see Figure 3HAs those skilled in the art will understand, the filler metal 82 is in communication with or electrically connected to the conductive metal layer 83, and the conductive metal layer 83 and the filler metal 82 can be formed simultaneously during fabrication. Although not shown, the conductive portion 80 may also be electrically connected to the bonding layer (e.g., through surface contact) without entering the bonding layer.

[0054] In the third embodiment, the conductive part 80 includes a hole 81, a filling metal layer 82, and a conductive metal layer 83. However, as those skilled in the art will understand, if it is sufficient to form an electrical connection, it is not necessary to provide a dedicated conductive metal layer 83 covering the surface 11B of the substrate 11, which is also within the meaning of the conductive part 80 of the present invention. Figure 2 This is a cross-sectional schematic diagram of the packaging structure of a MEMS device according to an exemplary embodiment of the present invention.

[0055] exist Figure 2 In this embodiment, a MEMS device 30 (e.g., an FBAR) is disposed on the surface 10A of a substrate 10 (corresponding to a functional substrate). A bonding metal layer or a second abutment portion 40 is disposed on the substrate 10, which is electrically connected to the electrode leads 20 of the MEMS device. As those skilled in the art will understand, the MEMS device is not limited to resonators such as FBARs, but as described above, it can be a filter, a radio frequency front end, or a module including the aforementioned components.

[0056] Figure 2 The image also shows a substrate 11 (corresponding to a packaging substrate), whose lower surface 11A is provided with a conductive layer 70. Figure 2 In the cross-sectional view shown, the insulating groove 50 divides the conductive layer 70 into two parts, 70 and 71, wherein 71 forms an electrical connection with the conductive part 80.

[0057] like Figure 2 As shown, a first abutment portion 72 is also present on the lower side of the bonding layer 71. Figure 2 In the illustrated embodiment, a bonding metal 60 is provided on the outer surface of the first abutment portion 72. As mentioned later, if the first abutment portion 72 and the second abutment portion 40 can be directly bonded, the bonding metal 60 may not be provided. Figure 2 In the middle, the first abutting part 72 and the second abutting part 40 abut against each other, and the bonding metal 60 is located between the two at the abutting point.

[0058] like Figure 2 As shown, the conductive part 80 passes through the substrate 11 and partially enters the bonding layer 71 to be electrically connected to the bonding layer 71.

[0059] Therefore, in Figure 2In the structure shown, the conductive part 80 conducts the signal from the upper surface 11B of the substrate 11 to the bonding layer 71 and the first abutting part 72 on the lower surface 11A of the substrate 11, and bonds it to the second abutting part 40 on the upper surface of the substrate 10 to form a conductive path.

[0060] exist Figure 2 In the example shown, the conductive layer 70 can be a doped semiconductor layer. The doped semiconductor layer, which is a conductive layer, can be formed on the substrate 11 by ion implantation. When a doped semiconductor is used, the substrate 11 and the conductive layer 70 are connected by covalent bonds, providing excellent water and gas leakage prevention and thus high reliability. Therefore, in Figure 2 A sealing interface is formed at the bonding surface or lower surface 11A of the substrate 11 or the upper surface of the conductive layer 70. Here, although the sealing interface formed based on doping is called an "interface", it can be considered as a layer between the conductive layer 70 and the substrate 11. This layer is a transition layer between the non-conductive substrate 11 and the conductive conductive layer 70.

[0061] Thus, even if the conductive part 80 passes through the substrate 11 and enters the sealing interface as part of the conductive layer 70, because the sealing interface has excellent water and air leakage prevention capabilities, even if water vapor or gas enters the through hole where the conductive part 80 is located from the upper surface 11B of the substrate 11, it cannot enter the accommodating space between the substrate 11 and the substrate 10 through the through hole.

[0062] In addition, Figure 2 In the case where the conductive part 80 only enters a portion of the bonding layer 71, the portion of the conductive part 80 that enters the bonding layer 71 is surrounded by the bonding layer 71.

[0063] By forming a sealed interface and making the conductive part pass through the sealed interface to make electrical contact with the bonding layer 71, it is possible to achieve conductivity or conduction by using the conductive part 80, while avoiding or reducing the entry of water vapor or gas from the outside into the space where the MEMS device is located through the through hole where the conductive part is located.

[0064] exist Figure 2 In the illustrated embodiment, the conductive portion 80 only enters a portion of the bonding layer 71. However, although not shown, the conductive portion 80 may also pass through the bonding layer 71 and enter the first abutting portion 72 if the conductive portion 80 is aligned with the first abutting portion and the size of the first abutting portion 72 allows the conductive portion to enter therein (in which case the cross-sectional area of ​​the conductive portion 80 is smaller than the cross-sectional area of ​​the first abutting portion 72). This is also within the scope of protection of the present invention.

[0065] As shown in the accompanying drawings of the present invention, the cross-sectional area of ​​the conductive portion 80 may be larger than the cross-sectional area of ​​the first abutting portion 72.

[0066] like Figure 2 As shown, relative to Figure 1 The structure omits sealing structures 41 and 42, thereby significantly reducing the size of the second abutment 40 or the size D1 of the mating surface between the first abutment 72 and the second abutment 40. Therefore, relative to... Figure 1 In the structure shown, the area of ​​the second abutment portion 40 can be reduced to, for example, 400 square micrometers, or even smaller, or the width of the horizontal joint surface between the first abutment portion and the second abutment portion can be in the range of 0.5-20 μm. Based on the technical solution of the present invention, the cross-sectional area of ​​the second abutment portion can be reduced to less than 400 square micrometers. This can reduce the overall size of the MEMS device, which is beneficial for device miniaturization. In a further embodiment, the difference between the width of the abutment surface of the second abutment portion 40 and the width of the abutment surface of the first abutment portion 72 is not greater than 5 μm.

[0067] As shown in the accompanying drawings of the present invention, in one embodiment of the present invention, the horizontal mating surfaces of the first abutting portion 72 and the second abutting portion 42 are flat surfaces, thereby... Figure 1 The specially designed dam structure shown is different. In other words, in this invention, "the joint surface is a flat surface" means that the horizontal joint surfaces of the first and second joints are not provided with a special structure for sealing by setting depressions or protrusions on the surface.

[0068] As mentioned above, the portion of the conductive layer 70 or bonding layer 71 that is in contact with the substrate is covalently bonded to the substrate 11, thereby forming a well-sealed interface. For example, the substrate 11 is a silicon substrate, while the conductive layer 70 is p-Si, which has good conductivity. The conductive layer 70 is generally prepared by ion implantation on a whole intrinsic silicon wafer, and it is covalently bonded to the substrate 11.

[0069] However, the present invention is not limited thereto. The portion of the conductive layer 70 or the bonding layer 71 that is in contact with the substrate 11 may not be a doped semiconductor layer, but may also be a metal. This metal may form a sealed interface with the surface of the substrate 11. For example, the conductive layer 70 or the bonding layer 71 may be a titanium layer and the substrate 11 may be a silicon substrate, in which case the surface of the titanium layer facing the substrate 11 forms a sealed interface. Or, as another example, the conductive layer 70 or the bonding layer 71 may be a tungsten layer and the substrate 11 may be a silicon substrate, in which case the surface of the tungsten layer facing the substrate 11 forms a sealed interface.

[0070] The portion of the conductive layer 70 or bonding layer 71 that is in contact with the substrate 11 can also be a conductive compound (e.g., TiN, ITO, and conductive oxide thin films). The surface of the conductive compound layer facing the substrate 11 forms a sealing interface.

[0071] In an optional embodiment, such as Figure 9As shown, a dielectric layer 73 may be disposed between the substrate 11 and the conductive layer 70 or the bonding layer 71. The dielectric layer 73 is adhered to both the substrate 11 and the conductive layer 70 or the bonding layer 71, forming a sealed connection to prevent moisture or air from entering. In this case, the surface of the bonding layer 71 and the surface of the dielectric layer 73 form a sealed interface. The dielectric layer 73 can increase the insulation between the bonding layers 71, enhance the adhesion between the conductive layer 70 or the bonding layer 71 and the substrate 11, thereby increasing the sealing performance, and can also serve as a barrier layer for deep silicon etching. A sealed connection (corresponding to the sealed interface) is formed between the lower surface of the dielectric layer 73 and the bonding layer 71, and a sealed connection is formed between the upper surface of the dielectric layer 73 and the lower surface of the substrate 11.

[0072] like Figure 2-7 As shown, a first abutment portion 72 is connected below the bonding layer 71. The first abutment portion 72 is made of metal. The first abutment portion 72 is adapted to engage or bond with the second abutment portion 40.

[0073] In the above description, the conductive layer 70 or the bonding layer 71 is a single-layer structure, but the present invention is not limited thereto. The bonding layer 71 or the conductive layer 70 can be a double-layer or multi-layer structure.

[0074] Figure 8-9 This is a cross-sectional schematic diagram of the packaging structure of a MEMS device according to different exemplary embodiments of the present invention.

[0075] like Figure 8-9 As shown, the conductive layer 70 includes a first layer 70A and a second layer 70B, while the bonding layer 71 includes a first layer 71A and a second layer 71B. The first layer and the second layer are connected to each other. The first layer can be the structure described above, for example, when the conductive layer or the bonding layer is a single layer, which will not be repeated here.

[0076] The second layer, which is electrically connected to the first layer, is a conductive layer formed of metal, conductive compound, or doped semiconductor.

[0077] like Figure 5-9 As shown, the conductive part 80 is in the form of a column or a solid metal column and only enters a portion of the first layer 71A without passing through the interface between the first layer 71A and the second layer 71B. In this way, the conductive part 80 can be electrically connected to the first layer, while preventing air or water vapor from entering the accommodating space from the interface between the first and second layers through the conductive part.

[0078] like Figure 2As shown, the conductive portion 80 can be a conductive cylinder or a non-metallic solid pillar. The filler metal covers the bottom and side walls of the hole (see the hole referred to in 3G) that passes through a portion of the substrate 11 and the first layer 71A, thereby forming a conductive cylindrical conductive portion defined by the filler metal. The conductive portion 80 can also be in other forms. For example, such as... Figure 5-9 As shown, the conductive part 80 is in the form of a conductive pillar. (As shown...) Figure 4 As shown, the upper part of the conductive part 80 is defined by a through hole, while the lower part is a column.

[0079] like Figure 8-9 As shown, when the bonding layer 71 includes a first layer 71A and a second layer 71B, the first abutting portion 72 is in contact with the second layer 71B. The first abutting portion 72 is made of metal, conductive compound or doped semiconductor. When the second layer 71B is metal, it can also be the same metal as the second layer 71B.

[0080] When the package structure includes multiple conductive parts 80, the bonding layers 71 corresponding to different conductive parts 80 need to be electrically isolated from each other. Figure 2-9 Figures 11 and 11 show an insulating groove 50. As shown, the insulating groove 50 extends from the conductive layer 70 into the substrate 11 and is disposed around the corresponding conductive portion 80. In other words, based on the insulating groove 50, the bonding layers 71 are electrically isolated from each other.

[0081] Electrical isolation between the bonding layers 71 can also be achieved without using insulating trenches. For example, the conductive layer 70 can be patterned to make the bonding layers 71 electrically isolated from each other, such as... Figure 10 As shown.

[0082] It should be noted that the conductive part 80 can be aligned with the second abutting part 40 (see, for example, see...). Figure 2-10 Alternatively, they can be staggered (see, for example, see...). Figure 11 As those skilled in the art will understand, such as Figure 11 As shown, when electrical isolation between bonding layers 71 is achieved by patterning the conductive layer 70, the conductive portion 80 and the second contact portion 40 can also be arranged in a staggered manner.

[0083] exist Figure 2-6 In Figures 8-11, a bonding metal 60 is provided between the first abutment portion 72 and the second abutment portion 40. However, when the first abutment portion 72 and the second abutment portion 40 are metal pairs that can bond to each other, such as gold-gold or aluminum-aluminum, the bonding metal 60 may not be used. Figure 7 As shown.

[0084] When the bonding metal 60 is provided, the first contact portion 72 can be a metal, a conductive compound, or a doped semiconductor.

[0085] In this invention, in order to reduce the cross-sectional area of ​​the first abutment portion 72 to further reduce the cross-sectional area of ​​the second abutment portion 40; and in order to align the position of the hole 81 for forming the through portion with the bonding layer 71, the cross-sectional area of ​​the bonding layer 71 can be made larger than the cross-sectional area of ​​the through portion 80. The cross-sectional area of ​​the bonding layer 71 can also be larger than the cross-sectional area of ​​the first abutment portion 72.

[0086] The following reference Figures 3A-3H Exemplary Description Figure 2 The process of fabricating the encapsulation structure in [the document / document].

[0087] like Figure 3A As shown, a substrate 11 (e.g., a silicon substrate) is provided with a doped semiconductor layer (e.g., p-Si), the doped semiconductor layer corresponding to the aforementioned conductor layer 70, which is conductive and is generally prepared by ion implantation. Figure 3A In the structure shown, at the boundary surface or surface 11A of the substrate 11, the doped semiconductor layer or conductive layer 70 is covalently bonded to the substrate 11. The surface of the substrate 11 opposite to surface 11A is 11B. The surface of the doped semiconductor layer or conductive layer 70 facing the substrate 11 forms a sealing interface.

[0088] like Figure 3B As shown, the doped semiconductor layer or conductive layer 70 is patterned using etching or other processes to form the first contact portion 72.

[0089] like Figure 3C As shown, in Figure 3B The surface of the structure is bonded with a metal layer and patterned to form a structure like... Figure 3C The bonding metal shown is 60.

[0090] like Figure 3D As shown, the substrate and the conductive doped semiconductor layer or conductive layer 70 are etched to form an insulating trench 50. As shown, the insulating trench 50 also penetrates the surface 11A and enters the substrate 11. The insulating trench 50 may be disposed around the first abutment portion 72. Figure 3D As shown, the aforementioned bonding layer 71 is formed based on the insulating trench 50. The bonding layer 71 is part of the conductive layer 70 but is electrically isolated from the other parts of the conductive layer 70 based on the insulating trench 50. Figure 3D It can be seen that the width or cross-sectional area of ​​the bonding layer 71 is greater than the width or cross-sectional area of ​​the first abutment portion 72. The insulating groove 50 is provided to electrically isolate the subsequent conductive portions 80 from each other.

[0091] like Figure 3E As shown, a MEMS device 30 and a second contact portion 40 connected to the electrode pins of the device are fabricated on the surface 10A of the substrate 10.

[0092] like Figure 3F As shown, Figure 3D Structure and Figure 3E The structures are opposed so that the first abutment portion 72 is bonded to the second abutment portion 40, and the thickness of the substrate 11 is reduced from one side of the surface 11B of the substrate 11 by grinding and CMP (chemical mechanical polishing).

[0093] like Figure 3G As shown, a hole 81 is formed by etching from one side of the surface 11B of the substrate 11. Figure 3G As shown, the hole penetrates the substrate 11 and surface 11A, partially entering the bonding layer 71. Figure 3G In this case, the lateral dimension of the hole is smaller than the lateral dimension of the bonding layer 71. The cross-sectional area of ​​the hole can be larger than the cross-sectional area of ​​the first abutment portion 72.

[0094] like Figure 3H As shown, metal is deposited and electroplated on one side of the surface 11B of the substrate 11, and the metal fills the hole 81 (the metal filling the hole 81 is the filler metal 82) to form a conductive portion 80. The metal on the surface 11B of the substrate 11 is patterned to form a conductive metal layer 83.

[0095] Based on the above, this invention also proposes a substrate structure for a MEMS device, comprising:

[0096] The substrate 11 has an opposing surface 11A and a non-opposing surface that is opposite to the opposing surface in the thickness direction of the substrate.

[0097] A conductive layer (bonding layer 71 corresponding to a portion of the conductive layer in the attached figure) is disposed on the opposing side;

[0098] in:

[0099] A sealing layer is provided between the conductive layer and the substrate;

[0100] The substrate structure further includes a conductive portion 80, which is electrically connected to the conductive layer. Further, the conductive portion passes through the substrate and the sealing layer from the non-opposing surface and only enters a portion of the conductive layer to become electrically connected to it; the end of the conductive portion passing through the sealing layer is surrounded by the conductive layer in the circumferential direction. Alternatively, the conductive portion passes through the first substrate from the first non-opposing surface without entering the conductive layer.

[0101] It should be noted that, in this invention, each numerical range, except where explicitly stated not to include endpoint values, can be either an endpoint value or the median of each numerical range, and all of these are within the protection scope of this invention.

[0102] In this invention, "upper" and "lower" refer to the bottom surface of the functional base of the packaging structure. For a component, the side closer to the bottom surface is the lower side, and the side farther from the bottom surface is the upper side.

[0103] In this invention, "inner" and "outer" are relative to the MEMS device located within the accommodating space in the lateral or radial direction. The side or end of a component closer to the MEMS device is called the inner side or inner end, while the side or end of the component farther from the MEMS device is called the outer side or outer end. For a reference position, being inside the position means being between the position and the MEMS device in the lateral or radial direction, while being outside the position means being farther away from the MEMS device in the lateral or radial direction.

[0104] As will be understood by those skilled in the art, bulk acoustic resonators can be used to form filters or other semiconductor devices.

[0105] Based on the above, the present invention proposes the following technical solution:

[0106] 1. A packaging structure for a MEMS device, comprising:

[0107] A first substrate, the first substrate having a first opposing surface and a first non-opposing surface opposite the first opposing surface in the thickness direction of the substrate;

[0108] The second substrate has a second opposing surface and a second non-opposing surface opposite to the second opposing surface in the thickness direction of the substrate, and the surface of the first opposing surface is opposite to the second opposing surface.

[0109] A conductive layer is disposed on one side of the first opposing surface. The conductive layer includes a bonding layer and a first abutting portion. The bonding layer includes a sealing interface facing the first opposing surface. The first abutting portion is connected to the bonding layer on the surface of the bonding layer opposite to the sealing interface.

[0110] The second abutment portion is disposed on one side of the second opposing surface. The first abutment portion and the second abutment portion are electrically connected by engaging with each other. The second abutment portion is adapted to be electrically connected to a MEMS device.

[0111] in:

[0112] The packaging structure also includes a conductive portion, which is electrically connected to the conductive layer.

[0113] 2. According to the packaging structure described in 1, wherein:

[0114] The conductive portion, after passing through the first substrate and the sealing interface from the first non-opposing surface, only enters a portion of the conductive layer and becomes electrically connected to the conductive layer. The end of the conductive portion passing through the sealing interface is surrounded by the conductive layer in the circumferential direction; or

[0115] The conductive portion passes through the first substrate from the first non-opposing surface without entering the conductive layer.

[0116] 3. The packaging structure according to 1 or 2, wherein:

[0117] The bonding layer includes a first layer, which is a doped semiconductor layer, and the surface of the doped semiconductor layer facing the first opposing surface constitutes the sealing interface.

[0118] 4. According to the packaging structure described in 3, wherein:

[0119] The conductive portion only enters a portion of the doped semiconductor layer.

[0120] 5. The packaging structure according to 1 or 2, wherein:

[0121] The bonding layer includes a first layer, which is a metal layer. The first layer is adapted to form a sealed connection with a first substrate, and the surface of the metal layer facing the first opposing surface constitutes the sealed interface.

[0122] 6. According to the packaging structure described in 5, wherein:

[0123] The conductive part only enters a portion of the metal layer.

[0124] 7. According to the packaging structure described in 6, wherein:

[0125] The first layer is a titanium layer, and the first substrate is a silicon substrate; or

[0126] The first layer is a tungsten layer, and the first substrate is a silicon substrate.

[0127] 8. The packaging structure according to 1 or 2, wherein:

[0128] The bonding layer includes a conductive first layer, and the encapsulation structure includes a dielectric layer disposed between a first substrate and a first layer. The dielectric layer forms a sealed connection with a first opposing surface and the first layer, respectively. The surface of the first layer facing the dielectric layer constitutes the sealed interface, and the dielectric layer forms a sealed connection with the first opposing surface.

[0129] 9. According to the packaging structure described in 8, wherein:

[0130] The conductive part only enters a portion of the first layer.

[0131] 10. The packaging structure according to 1 or 2, wherein:

[0132] The bonding layer includes a first layer, which is a conductive compound layer adapted to be sealed to a first substrate, and the conductive compound layer forms the sealing interface on the surface of the first opposing surface.

[0133] 11. The packaging structure according to 10, wherein:

[0134] The conductive portion only penetrates a portion of the conductive compound layer.

[0135] 12. The packaging structure according to any one of 3-11, wherein:

[0136] The bonding layer further includes a second layer electrically connected to the first layer, wherein the conductive portion enters only a portion of the first layer and does not cross the interface between the first and second layers, and the second layer is formed of a metal, a conductive compound, or a doped semiconductor; or

[0137] The bonding layer further includes a second layer electrically connected to the first layer, the conductive portion passing through the interface between the first and second layers and entering only a portion of the second layer, the second layer being formed of a metal or conductive compound or doped semiconductor.

[0138] 13. The packaging structure according to any one of 1-11, wherein:

[0139] The encapsulation structure includes multiple conductive portions and multiple first abutting portions corresponding to the multiple through holes;

[0140] The encapsulation structure includes an insulating groove that extends from the conductive layer into the first substrate and surrounds a corresponding conductive portion.

[0141] 14. The packaging structure according to 13, wherein:

[0142] The first abutting portion is aligned with the conductive portion, or the first abutting portion and the conductive portion are offset in the horizontal direction.

[0143] 15. The packaging structure according to any one of 1-11, wherein:

[0144] The encapsulation structure includes multiple conductive portions and multiple first abutting portions corresponding to the conductive portions, wherein the first abutting portions are aligned with or offset from the corresponding conductive portions in the horizontal direction;

[0145] The conductive layer is patterned so that the conductive parts are electrically isolated from each other.

[0146] 16. The packaging structure according to any one of 1-11, wherein:

[0147] The outer surface of the first abutment portion is provided with a bonding metal, which is adapted to be metal-bonded to the second abutment portion; or

[0148] The first abutment portion is made of metal and is adapted to be metal-bonded to the second abutment portion.

[0149] 17. The packaging structure according to any one of 1-11, wherein:

[0150] The projection of the conductive portion in the thickness direction of the substrate falls within the range of the bonding layer, and the diameter or width of the conductive portion is smaller than the width of the bonding layer; and / or

[0151] The cross-sectional area of ​​the bonding layer is larger than the cross-sectional area of ​​the first abutment portion; and / or

[0152] The cross-sectional area of ​​the conductive part is greater than the cross-sectional area of ​​the first abutting part.

[0153] 18. The packaging structure according to any one of 1-11, wherein:

[0154] The MEMS device includes a bulk acoustic resonator.

[0155] 19. The packaging structure according to any one of 1-18, wherein:

[0156] The width of the horizontal mating surface between the first abutment and the second abutment is in the range of 0.5-20 μm; or

[0157] The cross-sectional area of ​​the second contact portion is less than 400 square micrometers; or

[0158] The horizontal mating surfaces of the first abutting portion and the second abutting portion are flat surfaces.

[0159] 20. The packaging structure according to 19, wherein:

[0160] The difference between the width of the contact surface of the second contact portion and the width of the contact surface of the first contact portion is no greater than 5μm.

[0161] 21. According to the packaging structure described in 2, wherein:

[0162] The conductive portion, after passing through the first substrate and the sealing interface from the first non-opposing surface, only enters a portion of the bonding layer and becomes electrically connected to the bonding layer. The end of the conductive portion passing through the sealing interface is surrounded by the bonding layer in the circumferential direction; or

[0163] The conductive portion passes through the first substrate from the first non-opposing surface without entering the bonding layer.

[0164] 22. A substrate structure for a MEMS device, comprising:

[0165] A substrate having a first surface and a second surface opposite to the first surface in the substrate thickness direction;

[0166] A conductive layer is disposed on one side of the first surface, the conductive layer including a sealing interface facing the first surface;

[0167] in:

[0168] The substrate structure further includes a conductive portion, which is electrically connected to the conductive layer.

[0169] 23. The substrate structure according to 22, wherein:

[0170] The conductive portion, after passing through the substrate and sealing interface from the second surface, only enters a portion of the conductive layer and becomes electrically connected to it. The end of the conductive portion passing through the sealing interface is surrounded by the conductive layer in the circumferential direction; or

[0171] The conductive portion passes through the substrate from the second surface without entering the conductive layer.

[0172] 24. The substrate structure according to 22 or 23, wherein:

[0173] The conductive layer includes a doped semiconductor layer, which is integrally disposed with the substrate; or

[0174] The conductive layer includes a metal layer, and the metal layer forms a sealed connection with the substrate; or

[0175] The conductive layer includes a metal compound layer, which forms a sealed connection with the substrate; or

[0176] The substrate structure further includes a dielectric layer, which is disposed between the substrate and the conductive layer and forms a sealed connection with the substrate and the conductive layer respectively.

[0177] 25. A method for manufacturing a MEMS device, comprising the following steps:

[0178] A first substrate is provided, the first substrate having a first opposing surface and a first non-opposing surface opposite to the first opposing surface in the thickness direction of the substrate, a conductive layer is disposed on the first opposing surface, the conductive layer including a bonding layer and a first abutment portion, the bonding layer including a sealing interface facing the first opposing surface, and the first abutment portion being connected to the surface of the bonding layer opposite to the sealing interface.

[0179] A second substrate is provided, the second substrate having a second opposing surface and a second non-opposing surface opposite the second opposing surface in the thickness direction of the substrate, a MEMS device and a second abutment are disposed on the second opposing surface, the first abutment and the second abutment are adapted to be opposed to each other and electrically connected, and the second abutment is adapted to be electrically connected to the MEMS device.

[0180] The first abutment portion and the second abutment portion are joined together to form a receiving space between the first opposing surface and the second opposing surface, and the MEMS device is located within the receiving space.

[0181] The step of providing the first substrate includes:

[0182] A conductive portion is formed, which is electrically connected to the conductive layer.

[0183] 26. According to the method described in 25, wherein:

[0184] The step of forming the conductive portion includes causing the conductive portion to pass through the first non-opposing surface, the first substrate, and the sealing interface, and only a portion of the bonding layer, wherein the end of the conductive portion passing through the sealing interface is surrounded by the bonding layer in the circumferential direction; or

[0185] The conductive portion passes through the first substrate from the first non-opposing surface without entering the bonding layer.

[0186] 27. According to the method described in 25, wherein:

[0187] The steps of forming the conductive part include forming a plurality of conductive parts spaced apart from each other;

[0188] The method further includes the steps of: forming an insulating trench in a conductive layer surrounding the corresponding conductive portion and extending from the conductive layer into a first substrate, the insulating trench causing the conductive portions to be electrically isolated from each other; or patterning the conductive layer to cause the conductive portions to be electrically isolated from each other.

[0189] 28. According to the method described in 25, wherein:

[0190] In the step of forming the conductive part, the position of the conductive part is aligned with the first abutting part, or deviated from it in the horizontal direction.

[0191] 29. The method according to any one of 25-28, wherein:

[0192] The bonding layer includes a first layer, which is a doped semiconductor layer. The step of providing the first substrate includes: forming a doped semiconductor layer integral with the substrate based on a doping process, wherein the surface of the doped semiconductor layer facing the first opposing surface constitutes the sealing interface; or

[0193] The bonding layer includes a first layer, which is a metal layer. The step of providing a first substrate includes: forming a sealed connection between the first layer and the first substrate, wherein the surface of the metal layer facing the first opposing surface constitutes the sealed interface; or

[0194] The bonding layer includes a conductive first layer, and the step of providing the first substrate includes: disposing a dielectric layer between the first substrate and the first layer, wherein the dielectric layer forms a sealed connection with a first opposing surface and the first layer respectively; or

[0195] The bonding layer includes a first layer, which is a conductive compound layer, and the step of providing the first substrate includes: forming a sealed connection between the conductive compound layer and the first substrate.

[0196] 30. According to the method described in 29, wherein:

[0197] The step of providing the first substrate further includes forming a second layer electrically connected to the first layer, the first layer and the second layer constituting the bonding layer;

[0198] In the step of forming the conductive part, the conductive part only enters a portion of the first layer without crossing the interface between the first and second layers, or the conductive part crosses the interface between the first and second layers but only enters a portion of the second layer.

[0199] 31. According to the method described in 25, wherein:

[0200] The MEMS device includes a bulk acoustic resonator.

[0201] 32. The method according to any one of 25-31, comprising the steps of:

[0202] The width of the mating surfaces of the first and second abutments is selected to be in the range of 0.5-20μm.

[0203] 33. A MEMS device comprising a packaging structure according to any one of 1-21, or a substrate structure according to any one of 22-24.

[0204] 34. A filter comprising a packaging structure according to any one of 1-21, or a substrate structure according to any one of 22-24, or a MEMS device according to 33.

[0205] 35. An electronic device comprising a filter according to 34, or a packaging structure according to any one of 1-21, or a substrate structure according to any one of 22-24, or a MEMS device according to 33.

[0206] The electronic devices mentioned here include, but are not limited to, intermediate products such as radio frequency front-ends and filtering and amplification modules, as well as terminal products such as mobile phones, WIFI, and drones.

[0207] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that variations may be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A package structure of a MEMS device, comprising: a first substrate having a first opposing surface and a first non-opposing surface opposite to the first opposing surface in a thickness direction of the substrate; a second substrate having a second opposing surface and a second non-opposing surface opposite to the second opposing surface in a thickness direction of the substrate, the first opposing surface and the second opposing surface opposing each other; a conductive layer disposed on a side of the first opposing surface, the conductive layer comprising a bonding layer having a sealing interface facing the first opposing surface, and a first abutting portion connected to the bonding layer on a surface of the bonding layer opposite to the sealing interface; a second abutting portion disposed on a side of the second opposing surface, the first abutting portion and the second abutting portion abutting and electrically connecting to each other, the second abutting portion adapted to electrically connect to the MEMS device, wherein: the package structure further comprises a conductive portion electrically connecting to the conductive layer through the first substrate. 2.The package structure of claim 1, wherein: the conductive portion electrically connects to the conductive layer by only entering a portion of the conductive layer from the first non-opposing surface through the first substrate and the sealing interface, an end of the conductive portion through the sealing interface being surrounded by the conductive layer in a circumferential direction. 3.The package structure of claim 1, wherein: the conductive portion does not enter the conductive layer from the first non-opposing surface through the first substrate. 4.The package structure of claim 1 or 2, wherein: the bonding layer comprises a first layer, the first layer being a doped semiconductor layer, a surface of the doped semiconductor layer facing the first opposing surface constituting the sealing interface. 5.The package structure of claim 4, wherein: the conductive portion only enters a portion of the doped semiconductor layer. 6.The package structure of claim 1 or 2, wherein: the bonding layer comprises a first layer, the first layer being a metal layer, the first layer being adapted to form a sealed connection with the first substrate, and a surface of the metal layer facing the first opposing surface constituting the sealing interface. 7.The package structure of claim 6, wherein: the conductive portion only enters a portion of the metal layer. 8.The package structure of claim 7, wherein: the first layer is a titanium layer, and the first substrate is a silicon substrate; or the first layer is a tungsten layer, and the first substrate is a silicon substrate. 9.The package structure of claim 1 or 2, wherein: the bonding layer comprises a conductive first layer, the package structure comprising a dielectric layer disposed between the first substrate and the first layer, the dielectric layer forming a sealed connection with the first opposing surface and the first layer respectively, a surface of the first layer facing the dielectric layer constituting the sealing interface, and the dielectric layer forming a sealed connection with the first opposing surface. 10.The package structure of claim 9, wherein: the conductive portion only enters a portion of the first layer. 11.The package structure of claim 1 or 2, wherein: The bonding layer includes a first layer, the first layer being a layer of an electrically conductive compound, the layer of the electrically conductive compound being adapted to be sealingly connected to the first substrate, and the layer of the electrically conductive compound facing the surface of the first opposing surface to form the sealing interface.

12. The packaging structure of claim 11, wherein: The conductive portion only enters a portion of the layer of the electrically conductive compound.

13. The packaging structure of claim 4, wherein: The bonding layer further includes a second layer, the second layer being electrically connected to the first layer, the conductive portion only entering a portion of the first layer without crossing an interface between the first layer and the second layer, the second layer being formed of a metal or an electrically conductive compound or a doped semiconductor; or The bonding layer further includes a second layer, the second layer being electrically connected to the first layer, the conductive portion crossing an interface between the first layer and the second layer to only enter a portion of the second layer, the second layer being formed of a metal or an electrically conductive compound or a doped semiconductor.

14. The packaging structure of claim 6, wherein: The bonding layer further includes a second layer, the second layer being electrically connected to the first layer, the conductive portion only entering a portion of the first layer without crossing an interface between the first layer and the second layer, the second layer being formed of a metal or an electrically conductive compound or a doped semiconductor; or The bonding layer further includes a second layer, the second layer being electrically connected to the first layer, the conductive portion crossing an interface between the first layer and the second layer to only enter a portion of the second layer, the second layer being formed of a metal or an electrically conductive compound or a doped semiconductor.

15. The packaging structure of claim 9, wherein: The bonding layer further includes a second layer, the second layer being electrically connected to the first layer, the conductive portion only entering a portion of the first layer without crossing an interface between the first layer and the second layer, the second layer being formed of a metal or an electrically conductive compound or a doped semiconductor; or The bonding layer further includes a second layer, the second layer being electrically connected to the first layer, the conductive portion crossing an interface between the first layer and the second layer to only enter a portion of the second layer, the second layer being formed of a metal or an electrically conductive compound or a doped semiconductor.

16. The packaging structure of claim 11, wherein: The bonding layer further includes a second layer, the second layer being electrically connected to the first layer, the conductive portion only entering a portion of the first layer without crossing an interface between the first layer and the second layer, the second layer being formed of a metal or an electrically conductive compound or a doped semiconductor; or The bonding layer further includes a second layer, the second layer being electrically connected to the first layer, the conductive portion crossing an interface between the first layer and the second layer to only enter a portion of the second layer, the second layer being formed of a metal or an electrically conductive compound or a doped semiconductor.

17. The packaging structure of claim 1 or 2, wherein: The packaging structure includes a plurality of conductive portions and a plurality of first abutting portions corresponding to the plurality of conductive portions; The packaging structure includes an insulating groove extending from the conductive layer into the first substrate and disposed around a corresponding conductive portion.

18. The package structure of claim 17, wherein: the first abutment portion is aligned with the conductive portion, or the first abutment portion is misaligned with the conductive portion in a horizontal direction.

19. The package structure of claim 1 or 2, wherein: the package structure comprises a plurality of conductive portions and a plurality of first abutment portions corresponding to the conductive portions, the first abutment portions are aligned with the corresponding conductive portions or misaligned with the corresponding conductive portions in a horizontal direction; the conductive layer is patterned such that the conductive portions are electrically isolated from each other.

20. The package structure of claim 1 or 2, wherein: an outer surface of the first abutment portion is provided with a bonding metal, the bonding metal is adapted to be bonded with the second abutment portion; or the first abutment portion is made of a metal and is adapted to be bonded with the second abutment portion.

21. The package structure of claim 1 or 2, wherein: a projection of the conductive portion in a thickness direction of the substrate falls within a range of the bonding layer, a diameter or width of the conductive portion is less than a width of the bonding layer; and / or a cross-sectional area of the bonding layer is greater than a cross-sectional area of the first abutment portion; and / or a cross-sectional area of the conductive portion is greater than a cross-sectional area of the first abutment portion.

22. The package structure of claim 1 or 2, wherein: the MEMS device comprises a bulk acoustic wave resonator.

23. The package structure of claim 1 or 2, wherein: a width of a horizontal direction joint surface of the first abutment portion and the second abutment portion is within a range of 0.5-20 μm; or a cross-sectional area of the second abutment portion is less than 400 square microns; or the horizontal direction joint surface of the first abutment portion and the second abutment portion is a flat surface.

24. The package structure of claim 23, wherein: a difference between a width of the joint surface of the second abutment portion and a width of the joint surface of the first abutment portion is no more than 5 μm.

25. The package structure of claim 1, wherein: the conductive portion is electrically connected with the bonding layer only through a portion of the bonding layer from the first non-opposing surface through the first substrate and the sealing interface, an end of the conductive portion through the sealing interface is surrounded by the bonding layer in a circumferential direction; or the conductive portion does not enter the bonding layer from the first non-opposing surface through the first substrate.

26. A method for manufacturing a MEMS device, comprising the steps of: providing a first substrate, the first substrate having a first opposing surface and a first non-opposing surface opposite to the first opposing surface in a thickness direction of the substrate, a conductive layer is provided on the first opposing surface, the conductive layer comprises a bonding layer and a first abutment portion, the bonding layer comprises a sealing interface facing the first opposing surface, the first abutment portion is connected to a surface of the bonding layer opposite to the sealing interface; providing a second substrate, the second substrate having a second opposing surface and a second non-opposing surface opposite to the second opposing surface in a thickness direction of the substrate, a MEMS device and a second abutment portion are provided on the second opposing surface, the first abutment portion and the second abutment portion are adapted to be oppositely jointed to each other to be electrically connected, the second abutment portion is adapted to be electrically connected with the MEMS device; The first abutting portion and the second abutting portion are engaged with each other to form an accommodation space between the first opposite surface and the second opposite surface, and the MEMS device is located in the accommodation space, The step of providing the first substrate comprises: The conductive portion is formed to electrically connect the conductive layer and the first substrate.

27. The method of claim 26, wherein: The step of forming the conductive portion comprises making the conductive portion only enter a portion of the bonding layer from the first non-opposite surface through the first substrate and the sealing interface, and an end of the conductive portion passing through the sealing interface is surrounded by the bonding layer in the circumferential direction; or The conductive portion does not enter the bonding layer from the first non-opposite surface through the first substrate.

28. The method of claim 26, wherein: The step of forming the conductive portion comprises forming a plurality of conductive portions spaced apart from each other; The method further comprises the step of forming an insulating groove in the conductive layer around the corresponding conductive portion and extending from the conductive layer into the first substrate, the insulating groove making the conductive portions electrically isolated from each other; or The conductive layer is patterned to make the conductive portions electrically isolated from each other.

29. The method of claim 26, wherein: In the step of forming the conductive portion, the position of the conductive portion is aligned with the first abutting portion or deviates in the horizontal direction.

30. The method of any one of claims 26-29, wherein: The bonding layer comprises a first layer which is a doped semiconductor layer, and the step of providing the first substrate comprises forming a doped semiconductor layer integrated with the substrate based on a doping process, a surface of the doped semiconductor layer facing the first opposite surface constitutes the sealing interface; or The bonding layer comprises a first layer which is a metal layer, and the step of providing the first substrate comprises forming a sealing connection between the first layer and the first substrate, and a surface of the metal layer facing the first opposite surface constitutes the sealing interface; or The bonding layer comprises a conductive first layer, and the step of providing the first substrate comprises disposing a dielectric layer between the first substrate and the first layer, the dielectric layer forms a sealing connection with the first opposite surface and the first layer, respectively; or The bonding layer comprises a first layer which is a conductive compound layer, and the step of providing the first substrate comprises forming a sealing connection between the conductive compound layer and the first substrate.

31. The method of claim 30, wherein: The step of providing the first substrate further comprises forming a second layer electrically connected with the first layer, and the first layer and the second layer constitute the bonding layer; In the step of forming the conductive portion, the conductive portion only enters a portion of the first layer without passing through the interface between the first layer and the second layer, or the conductive portion passes through the interface between the first layer and the second layer and only enters a portion of the second layer.

32. The method of claim 26, wherein: The MEMS device comprises a bulk acoustic wave resonator.

33. The method of any one of claims 26-32, comprising the step of: The width of the engagement surface of the first abutting portion and the second abutting portion is selected to be in the range of 0.5-20 μm.

34. A MEMS device comprising the packaging structure according to any one of claims 1-25.

35. A filter comprising the packaging structure according to any one of claims 1-25, or the MEMS device according to claim 34.

36. An electronic device comprising the filter according to claim 35, or the packaging structure according to any one of claims 1-25, or the MEMS device according to claim 34.

Images