Moving mechanism and forming method thereof

Abstract

A mobile mechanism and a method for forming the same, the method comprising: providing a fixed platform and an internal structure located on the fixed platform; forming a sacrificial layer that conformally covers the internal structure and the fixed platform; forming an arched material layer that conformally covers the sacrificial layer; etching the arched material layer to form an arched electrode, the arched electrode comprising a side electrode opposite the sidewall of the internal structure and a bottom electrode opposite the fixed platform, the bottom electrode having a first opening that exposes a portion of the sacrificial layer on the fixed platform; and removing the sacrificial layer. In summary, the first opening can reduce the difficulty of removing the sacrificial layer, accelerate the removal rate of the sacrificial layer, and prevent the sacrificial layer from remaining, thereby improving the formation quality of the mobile mechanism and the output per unit time.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular to a moving mechanism and a forming method thereof. Background Art

[0002] Micro-electro-mechanical systems (MEMS) are micro-devices or systems that integrate microsensors, microactuators, micromechanical structures, micropower sources, signal processing and control circuits, high-performance electronic integrated devices, interfaces, and communications. Developed on the basis of microelectronics, MEMS are high-tech electronic and mechanical devices that incorporate techniques such as photolithography, corrosion, thin film etching, non-silicon processing, and precision machining.

[0003] MEMS technology offers numerous advantages, including small, intelligent, process-compatible, and low-cost applications. It is widely used in a wide range of fields, including sensors, automotive electronics, and biomedicine. During the MEMS fabrication process, a sacrificial layer is typically etched to create a cavity or cantilever structure, thereby achieving the mechanical properties of the MEMS device.

[0004] The release process is a frequently used process in MEMS manufacturing. It can be categorized into wet and dry release processes. The effectiveness of the release process is closely related to the length and corners of the release channel in the sacrificial layer. Summary of the Invention

[0005] The problem solved by the embodiments of the present invention is to provide a moving mechanism and a forming method thereof, so as to improve the performance of the moving mechanism.

[0006] To solve the above problems, an embodiment of the present invention provides a method for forming a moving mechanism, comprising: providing a fixed platform and an internal structure located on the fixed platform; forming a sacrificial layer that conformally covers the internal structure and the fixed platform; forming an arched material layer that conformally covers the sacrificial layer; etching the arched material layer to form an arched electrode, wherein the arched electrode includes a side electrode opposite to the side wall of the internal structure and a bottom electrode opposite to the fixed platform, and the bottom electrode has a first opening, which exposes a portion of the sacrificial layer on the fixed platform; and removing the sacrificial layer.

[0007] Correspondingly, an embodiment of the present invention also provides a moving mechanism, including: a fixed platform; an internal structure, separated from the fixed platform; a side electrode, located on the fixed platform, and the side electrode is spaced apart from the side wall of the internal structure; a bottom electrode, suspended on the fixed platform, and the bottom electrode is connected to the bottom of the side electrode, and the bottom electrode has a first opening exposing the fixed platform.

[0008] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0009] In the method for forming a movable mechanism provided in an embodiment of the present invention, the bow-shaped material layer on the fixed platform on the side of the internal structure is etched to form a bottom electrode having a first opening that exposes the sacrificial layer. The first opening reduces the length of the release path for the sacrificial layer between the bottom electrode and the fixed platform, facilitating the removal of the sacrificial layer between the bottom electrode and the fixed platform. Furthermore, the first opening also reduces the length of the release path for the sacrificial layer between the side electrode and the internal structure, reducing the difficulty of removing the sacrificial layer between the side electrode and the internal structure. In summary, the first opening facilitates the removal of the sacrificial layer, accelerates the removal rate of the sacrificial layer, and reduces the likelihood of sacrificial layer residue, thereby improving the formation quality and output per unit time of the movable mechanism.

[0010] In an optional solution, in the step of forming the first opening, in the normal direction of the fixed platform, part of the side wall of the first opening is flush with the side wall of the side electrode, thereby increasing the process window for removing the sacrificial layer at the corners of the side electrode and the bottom electrode, so that the sacrificial layer at the corners of the side electrode and the bottom electrode is easy to remove, making it less likely that the sacrificial layer will remain, thereby improving the formation quality of the moving mechanism and the output per unit time.

[0011] In an optional scheme, in the step of forming the bottom electrode, the bow electrode also includes: a top electrode located at the top of the internal structure, and a second opening is provided in the top electrode to expose the sacrificial layer, and the second opening reduces the length of the release channel of the sacrificial layer between the top electrode and the top of the internal structure, thereby reducing the difficulty of removing the sacrificial layer between the top electrode and the top of the internal structure. In addition, the second opening also reduces the length of the release channel of the sacrificial layer between the side electrode and the internal structure, thereby reducing the difficulty of removing the sacrificial layer between the side electrode and the internal structure. In summary, the second opening is conducive to removing the sacrificial layer, accelerating the removal rate of the sacrificial layer, making it less likely that the sacrificial layer will remain, and improving the formation quality of the moving mechanism and the output per unit time.

[0012] In an optional solution, in the step of forming the second opening, the second opening exposes the area between the internal structure and the side electrode, thereby increasing the process window for removing the sacrificial layer at the corners of the side electrode and the top electrode, so that the sacrificial layer at the corners of the side electrode and the top electrode is easy to remove, making it less likely that the sacrificial layer will remain, thereby improving the formation quality of the moving mechanism and the output per unit time. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figures 1 to 6It is a structural schematic diagram corresponding to each step in a method for forming a moving mechanism;

[0014] Figures 7 to 14 2 is a schematic structural diagram corresponding to each step in the first embodiment of the mobile mechanism of the present invention;

[0015] Figures 15 to 17 This is a schematic structural diagram corresponding to each step in the second embodiment of the mobile mechanism of the present invention;

[0016] Figures 18 to 20 2 is a schematic structural diagram corresponding to each step in the third embodiment of the mobile mechanism of the present invention;

[0017] Figures 21 to 23 It is a structural schematic diagram of the first embodiment of the moving mechanism of the present invention;

[0018] Figures 24 to 26 It is a structural schematic diagram of a second embodiment of the moving mechanism of the present invention;

[0019] Figures 27 to 29 It is a structural diagram of the third embodiment of the moving mechanism of the present invention. DETAILED DESCRIPTION

[0020] As can be seen from the background technology, a current method for forming a moving mechanism still has the problem of poor performance. Now, the reasons for the poor performance of the moving mechanism are analyzed in combination with a method for forming a moving mechanism.

[0021] Figures 1 to 6 , is a structural schematic diagram corresponding to each step in a method for forming a moving mechanism.

[0022] like Figure 1 As shown, a fixing platform 1 and a fixing structure 2 separated from the fixing platform 1 are provided; a sacrificial layer 3 is conformally covered on the fixing structure 2 and the fixing platform where the fixing structure 2 is exposed.

[0023] like Figure 2 As shown, a bow-shaped material layer 4 is conformally covered on the sacrificial layer 3 ; and the bow-shaped material layer 4 on the top of the fixed structure 2 is etched to form a release hole 7 .

[0024] The lateral direction is parallel to the surface of the fixed platform 1 and perpendicular to the extension direction of the fixed structure 2, the lateral dimension of the arched material layer 4 on the top of the fixed structure 2 is taken as l1, and the length of the arched material layer 4 on the side wall of the fixed structure 2 is taken as l2.

[0025] like Figure 3 As shown, after the bow-shaped material layer 4 is formed, a shielding layer 5 covering the fixed structure 2 is formed.

[0026] During the process of forming the shielding layer 5 , the shielding layer 5 is also formed in the release hole 7 .

[0027] like Figure 4 As shown, the bow-shaped material layer 4 exposed by the shielding layer 5 is removed, and the remaining bow-shaped material layer 4 serves as the bow-shaped layer 6 .

[0028] like Figure 5 As shown, after the arcuate layer 6 is formed, the shielding layer 5 is removed. The lateral dimension of the arcuate layer 6 on the surface of the fixing platform 100 on one side of the fixing structure 2 is l3.

[0029] like Figure 6 As shown, the sacrificial layer 3 is removed.

[0030] The sacrificial layer 3 is located between the bow layer 6 and the fixed structure 2, and between the fixed platform 1 and the bow layer 6. The fixed platform 1, the sacrificial layer 3 and the bow layer 6 are overlapped, the fixed platform 1, the fixed structure 2, the sacrificial layer 3 and the bow layer 6 are overlapped, and the internal structure 2, the sacrificial layer 3 and the bow layer 6 are overlapped. In the absence of the release hole 7, the shortest release channel of the sacrificial layer 3 is (l3+l2)*2+l1. The release channel of the sacrificial layer 3 is longer, the sacrificial layer 3 is difficult to remove, and residue is likely to remain, and the yield per unit time is low; and the angle between the top surface and the side wall of the fixed structure 2 is 90°, and the angle between the side wall of the fixed structure 2 and the surface of the fixed platform 1 is 90°. In the process of releasing the sacrificial layer 3, the sacrificial layer 3 at the 90-degree corner is difficult to remove, and residue is likely to remain, and the yield per unit time is low.

[0031] In the case of a release hole 7, the shortest release length at this time is greater than l3+l2 and less than l3+l2+l1, and the sacrificial layer 2 on the top of the fixed structure 2 is not likely to have residues. However, the sacrificial layer 2 on the side wall of the fixed structure 2 and between the bow layer 6 and the fixed platform 1, as well as the sacrificial layer 3 on the side wall of the fixed structure 2 and the 90° corner of the fixed platform surface are difficult to remove, and residues are likely to remain, resulting in low output per unit time.

[0032] To address the aforementioned technical issues, an embodiment of the present invention provides a method for forming a movable mechanism, wherein the arcuate material layer on the fixed platform at the side of the internal structure is etched to form a bottom electrode having a first opening exposing the sacrificial layer. The first opening reduces the length of the release channel for the sacrificial layer between the bottom electrode and the fixed platform, facilitating removal of the sacrificial layer between the bottom electrode and the fixed platform. Furthermore, the first opening also reduces the length of the release channel for the sacrificial layer between the side electrode and the internal structure, reducing the difficulty of removing the sacrificial layer between the side electrode and the internal structure. In summary, the first opening facilitates removal of the sacrificial layer, accelerates the removal rate of the sacrificial layer, and reduces the likelihood of sacrificial layer residue remaining, thereby improving the formation quality and yield per unit time of the movable mechanism.

[0033] In an optional solution, in the step of forming the bottom electrode, the bow-shaped electrode also includes: a top electrode located at the top of the internal structure, the top electrode having a second opening exposing the sacrificial layer, the second opening reducing the length of the release channel of the sacrificial layer between the top electrode and the top of the internal structure, thereby reducing the difficulty of removing the sacrificial layer between the top electrode and the top of the internal structure; in addition, the second opening also reduces the length of the release channel of the sacrificial layer between the side electrode and the internal structure, thereby reducing the difficulty of removing the sacrificial layer between the side electrode and the internal structure; in summary, the second opening is conducive to removing the sacrificial layer, accelerating the removal rate of the sacrificial layer, making it less likely for the sacrificial layer to remain, and improving the formation quality of the moving mechanism and the output per unit time.

[0034] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0035] refer to Figures 7 to 14 , is a structural schematic diagram corresponding to each step in the first embodiment of the method for forming the moving mechanism of the present invention.

[0036] refer to Figure 7 , providing a fixed platform 200 and an internal structure 201 located on the fixed platform 200.

[0037] The fixed platform 200 is used to provide a platform for the moving mechanism to move the moved parts.

[0038] In this embodiment, the fixed platform 200 is a substrate. In other embodiments, the fixed platform may also be other functional structures. Specifically, the substrate may be a semiconductor substrate, which may be formed using a semiconductor manufacturing process. As an example, the substrate is a silicon substrate. In other embodiments, the substrate may be made of other materials such as germanium, silicon germanium, silicon carbide, gallium arsenide, or indium gallium.

[0039] The internal structure 201 is prepared for the subsequent formation of a sacrificial layer and a bow material layer.

[0040] The internal structure 201 includes a support column 2011 and a side driving electrode 2012 located on the side wall of the support column 2011 .

[0041] The extending direction of the internal structure 201 is defined as a first direction, and the second direction is parallel to the surface of the fixed platform 200 and perpendicular to the extending direction of the internal structure 201. In this embodiment, the side driving electrodes 2012 are located on two side walls in the second direction.

[0042] The support columns 2011 are used to support the side drive electrodes 2012, thereby improving the mechanical strength and stability of the side drive electrodes 2012. The support columns 2011 are also used to electrically isolate the side drive electrodes 2012 located on two opposite sides thereof, facilitating application of drive signals to the side drive electrodes 2012 located on their respective sides when the moving mechanism is operating.

[0043] In this embodiment, the support column 2011 is a strip-shaped structure extending along the first direction. In other embodiments, the support column may also be a polygonal structure, including multiple side surfaces corresponding to each side of the polygon. Accordingly, a side driving electrode is provided on any side surface of the support column, or side driving electrodes are provided on multiple side surfaces of the support column, thereby enabling the movable platform to move in multiple second directions.

[0044] In this embodiment, the support pillar 2011 is made of a dielectric material. As an example, the support pillar 2011 is made of silicon nitride. Silicon nitride has excellent insulation properties and is relatively hard, which helps improve the mechanical strength of the support pillar 2011. In other embodiments, the support pillar may be made of other suitable dielectric materials such as silicon oxide or silicon oxynitride. The support pillar may be formed using a semiconductor process.

[0045] In other embodiments, the support pillar may also include: a conductive pillar; and a dielectric layer covering the side surfaces of the conductive pillar. Accordingly, the conductive pillar and the side drive electrodes are electrically isolated by the dielectric layer, thereby enabling the support pillar to also electrically isolate the side drive electrodes. The conductive pillar may be made of a metal or an ion-doped semiconductor material; and the dielectric layer may be made of other suitable dielectric materials such as silicon nitride, silicon oxide, or silicon oxynitride.

[0046] Later, side electrodes are formed on the side walls of the internal structure 201. When the moving mechanism is working, the side electrodes and the side driving electrodes 2012 can be electrostatically attracted to each other, thereby driving the corresponding side electrodes to move along the second direction by a preset distance d or twice the preset distance d.

[0047] In this embodiment, the side drive electrodes 2012 are made of a conductive material to facilitate application of a drive signal to the side drive electrodes 2012. Specifically, the side drive electrodes 2012 are made of an ion-doped semiconductor material (e.g., ion-doped polysilicon), which is compatible with semiconductor manufacturing processes, facilitates mass production, and reduces process costs. In other embodiments, the side drive electrodes may also be made of a metal material, such as aluminum, copper, or tungsten.

[0048] Continue to refer Figure 7 , forming a sacrificial layer 202 that conformally covers the internal structure 201 and the fixing platform 200.

[0049] The sacrificial layer 202 occupies the spatial position of the surface of the fixed platform 200 on the side of the internal structure 201, so that the bottom electrode formed subsequently can be suspended on the fixed platform 200. The spatial position of the surface of the top wall and side wall of the internal structure 201 enables the side electrode formed subsequently to be spaced apart from the internal structure 201, and enables the top electrode formed subsequently to be suspended on the top of the internal structure 201.

[0050] In this embodiment, the material of the sacrificial layer 202 is easily removable, and the sacrificial layer 202, the fixed platform 200, the internal structure 201, and the subsequently formed bow material layer all have a high etching selectivity. Therefore, during the subsequent removal of the sacrificial layer 202, damage to the fixed platform 200, the internal structure 201, and the bow material layer is minimal. In this embodiment, the etching selectivity of the sacrificial layer 202, the fixed platform 200, the internal structure 201, and the bow material layer is greater than 3.

[0051] Specifically, the material of the sacrificial layer 202 may be one or more of silicon oxide, amorphous carbon, germanium, and silicon germanium. In this embodiment, the material of the sacrificial layer 202 is silicon oxide. Silicon oxide is a commonly used material with a simple formation process and a mature and easily controllable removal process.

[0052] It should be noted that in the step of forming the sacrificial layer 202: the sacrificial layer 202 has a groove (not shown in the figure) exposing the fixed platform 200, the extension direction of the groove is the same as the extension direction of the internal structure 201, and the groove is spaced from the internal structure 201.

[0053] In this embodiment, the step of forming the sacrificial layer 202 includes: forming a sacrificial material layer that conformally covers the fixed platform 200 and the internal structure 201 ; patterning the sacrificial material layer to form a groove, and the remaining sacrificial material layer serves as the sacrificial layer 202 .

[0054] In this embodiment, the sacrificial material layer is formed by a chemical vapor deposition (CVD) process, and the sacrificial material layer has good film uniformity and step coverage.

[0055] In this embodiment, the thickness d of the sacrificial layer 202 located on the side of the internal structure 201 is a predetermined spacing. This predetermined spacing determines the spacing between the subsequently formed side electrodes and the corresponding side drive electrodes 2012, thereby determining the movement step length of the side electrodes. Therefore, the thickness of the sacrificial layer 202 is appropriately set based on the required travel range and movement accuracy of the movement mechanism. The thinner the sacrificial layer 202, the higher the movement accuracy.

[0056] Continue to refer Figure 7 , forming a bow-shaped material layer 203 that conformally covers the sacrificial layer 202.

[0057] The bow material layer 203 is prepared for subsequent patterning of the bow material layer 203 to form a top electrode, side electrodes, and a bottom electrode.

[0058] In this embodiment, the bow material layer 203 is made of a conductive material, such as a metal material or an ion-doped semiconductor material. Specifically, the bow material layer 203 is made of an ion-doped semiconductor material (e.g., ion-doped polysilicon), which is compatible with semiconductor manufacturing processes, facilitates mass production, and reduces process costs. In other embodiments, the bow material layer may also be made of a metal material, such as aluminum, copper, or tungsten.

[0059] In this embodiment, the bow material layer 203 is formed using an atomic layer deposition (ALD) process. The bow material layer 203 has good step coverage and high film uniformity, making it easy to ensure that the thickness of the bow material layer 203 on the sidewalls of the internal structure 201 is consistent with the thickness of the bow material layer 203 on the top surface of the internal structure 201. This can effectively control the thickness of the subsequently formed top and bottom electrodes, as well as the second dimension of the side electrodes. In other embodiments, the bow material layer can also be formed using a physical vapor deposition (PVD) process.

[0060] It should be noted that, in the step of providing the bow-shaped material layer 203 , the bow-shaped material layer 203 is formed in the groove, and the bow-shaped material layer 203 located in the groove and directly above the groove serves as the fixed electrode 204 .

[0061] The fixed electrode 204 is fixedly connected to the fixed platform 200, and the bow-shaped material layer is subsequently etched to form a bow-shaped electrode, which includes a bottom electrode located on the side of the internal structure 201; the remaining bow-shaped material layer between the bottom electrode and the fixed electrode 204 serves as an elastic structure, and the fixed electrode 204 provides a fixed end for the elastic structure.

[0062] refer to Figures 8 to 11 , Figure 9 for Figure 8 Cross-section at CC, Figure 11 for Figure 10 The cross-section at DD, and Figure 9 and Figure 11 All are based on Figure 7 The schematic diagram of the cross section should be noted that only Figure 9 and Figure 11 The elastic structure and the fixed electrode 204 are shown in FIG.

[0063] The arcuate material layer 203 is etched to form an arcuate electrode, which includes a side electrode 207 opposite to the side wall of the internal structure 201, a bottom electrode 206 opposite to the fixed platform 200 (such as Figure 11 As shown), the bottom electrode 206 has a first opening 205 (as shown Figure 11 As shown in FIG. 2 , the first opening 205 exposes a portion of the sacrificial layer 202 on the fixing platform 200 .

[0064] In the method for forming a movable mechanism provided in an embodiment of the present invention, the bow-shaped material layer 203 on the fixed platform 200 on the side of the internal structure 201 is etched to form a bottom electrode 206. The bottom electrode 206 has a first opening 205 that exposes the sacrificial layer 202. The first opening 205 reduces the length of the release path for the sacrificial layer 202 between the bottom electrode 206 and the fixed platform 200, facilitating the removal of the sacrificial layer 202 between the bottom electrode 206 and the fixed platform 200. Furthermore, the first opening 205 also reduces the length of the release path for the sacrificial layer 202 between the side electrode 207 and the internal structure 201, reducing the difficulty of removing the sacrificial layer 202 between the side electrode 207 and the internal structure 201. In summary, the first opening 205 facilitates the removal of the sacrificial layer 202, accelerates the removal rate of the sacrificial layer 202, and reduces the likelihood of sacrificial layer 202 remaining, thereby improving the formation quality and yield of the movable mechanism.

[0065] In this embodiment, in the step of forming the first opening 205 , in the normal direction of the surface of the fixing platform 200 , part of the sidewall of the first opening 205 is flush with the sidewall of the side electrode 207 .

[0066] In the normal direction of the surface of the fixed platform 200, part of the side wall of the first opening 205 is flush with the side wall of the side electrode 207, which increases the removal process window of the sacrificial layer 202 at the corner of the side electrode 207 and the bottom electrode 206, so that the sacrificial layer 202 at the corner of the side electrode 207 and the bottom electrode 206 is easy to remove, making it difficult for the sacrificial layer 202 to remain, thereby improving the formation quality of the moving mechanism and the output per unit time.

[0067] In this embodiment, the bottom electrodes 206 are one pair or multiple pairs.

[0068] It should be noted that, in the step of forming the bottom electrode 206, the arched electrode further includes: a top electrode 208 located on the top of the internal structure 201, the top electrode 208 having a second opening 209 (such as Figure 10 shown).

[0069] In an embodiment of the present invention, the second opening 209 reduces the length of the release channel of the sacrificial layer 202 between the top electrode 208 and the top of the internal structure 201, thereby reducing the difficulty of removing the sacrificial layer 202 between the top electrode 208 and the top of the internal structure 201. In addition, the second opening 209 also reduces the length of the release channel of the sacrificial layer 202 between the side electrode 207 and the internal structure 201, thereby reducing the difficulty of removing the sacrificial layer 202 between the side electrode 207 and the internal structure 201. In summary, the second opening 209 is conducive to removing the sacrificial layer 202, accelerating the removal rate of the sacrificial layer 202, making it difficult for the sacrificial layer 202 to remain, and improving the formation quality of the moving mechanism and the output per unit time.

[0070] In this embodiment, during the step of forming the second opening 202, the second opening 202 exposes the area between the internal structure 201 and the side electrode 207. Specifically, the second opening 202 exposes the area between the internal structure 201 and one side electrode 207, or exposes the area between the internal structure 201 and two side electrodes 207.

[0071] In the step of forming the second opening 202, the second opening 202 exposes the area between the internal structure 201 and the side electrode 207, thereby increasing the removal process window of the sacrificial layer 202 at the corners of the side electrode 207 and the top electrode 208, so that the sacrificial layer 202 at the corners of the side electrode 207 and the top electrode 208 is easy to remove, making it difficult for the sacrificial layer 202 to remain, thereby improving the formation quality of the moving mechanism and the output per unit time.

[0072] The step of etching the bow material layer 203 to form the bow electrode includes: forming a plurality of shielding layers 210 (such as Figure 10 As shown), the shielding layer 210 covers the bow-shaped material layer 203 of the second direction dimension of the side portion of the internal structure 201; the bow-shaped material layer 203 is etched using the shielding layer 210 as a mask to form the first opening 205 and the second opening 209.

[0073] In this embodiment, a dry etching process is used to etch the bow-shaped material layer 203 using the shielding layer 210 as a mask to form the bow-shaped electrode. The dry etching process exhibits anisotropic etching characteristics and good controllability of the etching profile, enabling highly accurate pattern conversion. This helps ensure that the morphology of the first opening 205 meets process requirements and also improves the removal efficiency of the bow-shaped material layer 203. Furthermore, during the dry etching process for etching the bow-shaped material layer 203, the top of the sacrificial layer 202 is used as the etching stop point, thereby minimizing damage to other film structures.

[0074] The shielding layer 210 is made of a material that is easy to remove and can act as a mask, thereby reducing damage to the bottom electrode 206 , the top electrode 208 , and the side electrodes 207 when the shielding layer 210 is subsequently removed.

[0075] In this embodiment, the material of the shielding layer 210 includes an organic layer (not shown in the figure), an anti-reflective coating layer (not shown in the figure) located on the organic layer, and a photoresist layer (not shown in the figure) located on the anti-reflective coating layer.

[0076] The steps of forming the shielding layer 210 include: forming an organic material layer covering the bow material layer 203; forming an anti-reflective material layer on the organic material layer; forming a photoresist material layer on the anti-reflective material layer; patterning the photoresist material layer to form the photoresist layer; etching the anti-reflective material layer and the organic material layer using the photoresist layer as a mask, with the remaining anti-reflective material layer serving as the anti-reflective layer and the remaining organic material layer serving as the organic layer.

[0077] In this embodiment, the first opening 205 and the second opening 209 are formed by etching the bow material layer 203 in the same etching process using the shielding layer 210 as a mask, which helps to simplify the formation process of the first opening and the second opening. Accordingly, the bottom electrode 103 corresponds to the top electrode 107 in a one-to-one manner in the second direction.

[0078] In other embodiments, in the step of etching the bow-shaped material layer to form the bow-shaped electrode, the first opening is formed; after the first opening is formed, the second opening is formed; or, the second opening is formed; after the second opening is formed, the first opening is formed.

[0079] The first opening and the second opening are formed in different steps, which is conducive to enabling the first opening and the second opening to meet diverse position requirements.

[0080] In this embodiment, the bow-shaped material layer 203 directly above the sacrificial layer 202 and a portion of the thickness of the bow-shaped material layer 203 on the side of the sacrificial layer 202 are etched to form the second opening 209 .

[0081] Accordingly, along a line perpendicular to the surface normal of the fixing platform 200 , the size of the side electrode 207 is smaller than the size of the internal structure 201 .

[0082] In the step of forming the second opening 209, etching a partial thickness of the bow-shaped material layer 203 on the side of the sacrificial layer 202 is beneficial to increasing the removal process window of the sacrificial layer at the corners of the side electrode 207 and the top electrode 208, so that the sacrificial layer 202 at the corners of the side electrode 207 and the top electrode 208 is easy to remove, making it difficult for the sacrificial layer 202 to remain, thereby improving the formation quality of the moving mechanism and the output per unit time.

[0083] In other embodiments, in the step of etching the bow-shaped material layer to form the bow-shaped electrode, the bow-shaped material layer directly above the sacrificial layer is etched to form a second opening.

[0084] Accordingly, along a line perpendicular to the surface normal of the fixing platform 200 , the size of the side electrode 207 is equal to the size of the internal structure 201 .

[0085] In the step of forming the second opening 209, while reducing the length of the release channel of the sacrificial layer 202 between the top electrode 208 and the internal structure 101, the size of the side electrode 207 in the normal direction of the surface of the fixed platform 200 is not easy to reduce. When the semiconductor is working, it is beneficial to make the electrostatic force between the side electrode 207 and the side driving electrode 2012 larger, which is beneficial to improving the performance of the moving mechanism.

[0086] It should be noted that, in the step of etching the bow-shaped material layer 203 to form the bow-shaped electrode, the fixed electrode 204 is retained, and the remaining bow-shaped material layer 203 between the fixed electrode 204 and the bottom electrode 206 serves as the elastic structure 211 .

[0087] When the moving mechanism is in operation, when the electrostatic force between the side electrode 207 and the side driving electrode 2012 disappears, the side electrode 207 is reset by the elastic structure 211. In addition, the elastic structure 211 also prevents the bottom electrode 206 from being displaced in the direction normal to the surface of the fixed platform 200. In other words, it prevents the arcuate electrode from being displaced in the direction normal to the surface of the fixed platform 200.

[0088] Specifically, the elastic structure 211 includes a Z-shaped spring wire.

[0089] In this embodiment, the elastic structure 211 and the fixed structure 204 correspond to the bottom electrode 206. In this embodiment, the bottom electrodes 206 are one or more pairs, and correspondingly, the elastic structure 211 and the fixed structure 204 are one or more pairs.

[0090] refer to Figures 12 to 14 , Figure 13 Based on Figure 7 Schematic diagram of the cross section, only Figure 13 The elastic structure 211 and the fixed electrode 204 are shown in FIG, and the sacrificial layer 202 is removed.

[0091] The first opening 205 reduces the length of the release channel of the sacrificial layer 202 between the bottom electrode 206 and the fixed platform 200, and the second opening 209 reduces the length of the release channel of the sacrificial layer 202 between the top electrode 208 and the top of the internal structure 201. The first opening 205 and the second opening 209 reduce the length of the release channel of the sacrificial layer 202 between the side electrode 207 and the internal structure 201. In summary, the first opening 205 and the second opening 209 are conducive to reducing the process difficulty of removing the sacrificial layer 202, accelerating the removal rate of the sacrificial layer 202, making it difficult for the sacrificial layer 202 to remain, and improving the formation quality of the moving mechanism and the output per unit time.

[0092] The sacrificial layer 202 is removed, so that the top electrode 208 is spaced apart from the top of the internal structure 201 , the side electrodes are spaced apart from the internal structure 201 , and the bottom electrode 206 is spaced apart from the fixing platform 200 .

[0093] In this embodiment, an isotropic etching process is used to remove the sacrificial layer 202. Specifically, in this embodiment, the isotropic etching process includes a wet etching process. The wet etching process is isotropic etching, which has a high etching rate, is simple to operate, and has low process costs. In other embodiments, the isotropic etching process includes an isotropic dry etching process.

[0094] In this embodiment, in the first direction, the size of the bottom electrode 206 is L4; in the second direction, the size of the bottom electrode 206 is L3, the size of the top electrode 208 is L1, and in the direction perpendicular to the surface normal of the fixed platform 200, the size of the side electrode 207 is L2. The maximum value of the shortest release channel for removing the sacrificial layer 202 is Max(L2, L4). The shortest release channel length of the sacrificial layer is small, so that the sacrificial layer 202 is easy to remove.

[0095] refer to Figures 15 to 17 , is a schematic structural diagram corresponding to each step in the second embodiment of the method for forming a moving mechanism of the present invention, wherein Figure 16 and Figure 17 Both Figure 15 Cross-section view in the EE direction.

[0096] The present embodiment is similar to the first embodiment in that, in the step of forming the bow-shaped electrode, in the normal direction of the surface of the fixing platform 300 , part of the sidewall of the first opening 305 is flush with the sidewall of the side electrode 307 .

[0097] The difference between this embodiment and the first embodiment is that in the step of forming the bow-shaped electrode, the first opening 305 is surrounded by the bottom electrode 306 and the side electrode 307 , and the first opening 305 includes a circular opening or a polygonal opening.

[0098] The first opening 305 reduces the minimum release channel between the bottom electrode 306 and the fixed platform 300, increases the removal process window of the sacrificial layer 302 at the corners of the side electrode 307 and the bottom electrode 306, makes it difficult for the sacrificial layer 302 at the corners of the side electrode 307 and the bottom electrode 306 to remain, and also makes the bottom electrodes 306 connected to each other, which is beneficial to improving the structural strength of the bow electrode.

[0099] Specifically, such as Figure 16 As shown, in the step of forming the bow-shaped electrode, the first opening 305 is surrounded by the bottom electrode 306 and the side electrode 307 , and the first opening 305 includes a polygonal opening, such as a square opening.

[0100] Specifically, such as Figure 17As shown, in the step of forming the bow-shaped electrode, the first opening 305 is surrounded by the bottom electrode 306 and the side electrode 307 , and the first opening 305 includes a circular opening.

[0101] refer to Figures 18 to 20 , is a schematic structural diagram corresponding to each step in the third embodiment of the method for forming a moving mechanism of the present invention. Figure 19 and Figure 20 Both Figure 18 The cross-sectional view is taken along the FF direction, and only the region of the top electrode 408 is shown.

[0102] The present embodiment is similar to the first embodiment in that, in the step of forming the bow-shaped electrode, the second opening 409 exposes the area between the internal structure 401 and the side electrode 407 .

[0103] The difference between this embodiment and the first embodiment is that the second opening 409 is surrounded by the top electrode 408 , and the second opening 409 includes a circular opening or a polygonal opening.

[0104] The formation of the second opening 409 reduces the length of the shortest release channel of the sacrificial layer 402 at the top of the top electrode 408 and the internal structure 401, while increasing the removal process window of the sacrificial layer 402 at the corners of the side electrode 407 and the top electrode 408, so that the sacrificial layer 402 at the corners of the side electrode 407 and the top electrode 408 is not easy to remain, and the top electrodes 408 are connected to each other, which is beneficial to improving the structural strength of the bow electrode.

[0105] like Figure 19 As shown, in the step of forming the bow-shaped electrode, the second opening 409 is surrounded by the top electrode 408 , and the second opening 409 includes a circular opening.

[0106] like Figure 20 As shown, in the step of forming the bow-shaped electrode, the second opening 409 is surrounded by the top electrode 408 , and the second opening 409 includes a polygonal opening, such as a rectangular opening.

[0107] refer to Figures 21 to 23 , is a structural diagram of the first embodiment of the moving mechanism of the present invention. Figure 22 for Figure 21 The cross-section at AA, Figure 23 for Figure 21 Axonometric drawing, only Figure 22 The elastic structure and the fixed electrodes are shown in FIG.

[0108] The moving mechanism includes: a fixed platform 100; an internal structure 101, which is separated from the fixed platform 100; a side electrode 102, which is located on the fixed platform 100, and the side electrode 102 is spaced apart from the side wall of the internal structure 101; a bottom electrode 103, which is suspended on the fixed platform 100 and connected to the bottom of the side electrode 102, and the bottom electrode 103 has a first opening 104 that exposes the fixed platform 100.

[0109] In the movable mechanism provided by the embodiment of the present invention, the side electrodes 102 are located on the fixed platform 100 and spaced apart from the sidewalls of the internal structure 101. The bottom electrode 103 is suspended above the fixed platform 100 and connected to the bottom of the side electrodes 102. The bottom electrode 103 has a first opening 104 that exposes the fixed platform 100. During the formation of the movable mechanism, a sacrificial layer is formed between the side electrodes 102 and the internal structure 101, between the bottom electrode 103 and the fixed platform 100, and on the fixed platform 100 where the bottom electrode 103 is exposed. The first opening 104 exposes the sacrificial layer. The first opening 104 reduces the length of the release channel of the sacrificial layer between the bottom electrode 103 and the fixed platform 100, which is conducive to removing the sacrificial layer on the surface of the fixed platform 100. In addition, the first opening 104 also reduces the length of the release channel of the sacrificial layer between the side electrode 102 and the internal structure 101, reducing the difficulty of removing the sacrificial layer between the side electrode 102 and the internal structure 101. In summary, the first opening 104 can reduce the difficulty of removing the sacrificial layer, speed up the removal rate of the sacrificial layer, make the sacrificial layer less likely to remain, and improve the formation quality of the moving mechanism and the output per unit time.

[0110] The fixed platform 100 is used to provide a platform for the moving mechanism to move the moved parts.

[0111] In this embodiment, the fixed platform 100 is a substrate. In other embodiments, the fixed platform may also be other functional structures. Specifically, the substrate may be a semiconductor substrate, which may be formed using a semiconductor manufacturing process. As an example, the substrate is a silicon substrate. In other embodiments, the substrate may be made of other materials such as germanium, silicon germanium, silicon carbide, gallium arsenide, or indium gallium.

[0112] The internal structure 101 includes a support column 1011 and a side driving electrode 1012 located on the side wall of the support column 1011 .

[0113] The extending direction of the internal structure 101 is defined as a first direction, and the second direction is parallel to the surface of the fixed platform 100 and perpendicular to the extending direction of the internal structure 101. In this embodiment, the side driving electrodes 1012 are located on two side walls in the second direction.

[0114] The support posts 1011 are used to support the side drive electrodes 1012, thereby improving the mechanical strength and stability of the side drive electrodes 1012. The support posts 1011 are also used to electrically isolate the side drive electrodes 1012 located on two opposite sides thereof, facilitating application of drive signals to the side drive electrodes 1012 located on their respective sides when the moving mechanism is operating.

[0115] In this embodiment, the support column 1011 is a strip-shaped structure extending along the first direction. In other embodiments, the support column can also be a polygonal structure, including multiple side surfaces corresponding to each side of the polygon. Accordingly, side drive electrodes are provided on any side surface of the support column, or side drive electrodes are provided on multiple side surfaces of the support column, thereby enabling the movable platform to move in multiple second directions.

[0116] In this embodiment, the support pillar 1011 is made of a dielectric material. As an example, the support pillar 1011 is made of silicon nitride. Silicon nitride has excellent insulation properties and is relatively hard, which helps improve the mechanical strength of the support pillar 1011. In other embodiments, the support pillar may also be made of other suitable dielectric materials, such as silicon oxide or silicon oxynitride.

[0117] In other embodiments, the support pillar may also include: a conductive pillar; and a dielectric layer covering the side surfaces of the conductive pillar. Accordingly, the conductive pillar and the side drive electrodes are electrically isolated by the dielectric layer, thereby enabling the support pillar to also electrically isolate the side drive electrodes. The conductive pillar may be made of a metal or an ion-doped semiconductor material; and the dielectric layer may be made of other suitable dielectric materials such as silicon nitride, silicon oxide, or silicon oxynitride.

[0118] When the moving mechanism is working, the side electrodes 102 and the side driving electrodes 1012 can be electrostatically attracted to each other, thereby driving the corresponding side electrodes 102 to move along the second direction by the preset distance d or twice the preset distance d.

[0119] In this embodiment, the side drive electrodes 1012 are made of a conductive material to facilitate application of a drive signal to the side drive electrodes 1012. Specifically, the side drive electrodes 1012 are made of an ion-doped semiconductor material (e.g., ion-doped polysilicon), which is compatible with semiconductor manufacturing processes, facilitates mass production, and reduces process costs. In other embodiments, the side drive electrodes may also be made of a metal material, such as aluminum, copper, or tungsten.

[0120] In this embodiment, the side electrodes 102 are made of a conductive material, such as a metal or an ion-doped semiconductor material. Specifically, the side electrodes 102 are made of an ion-doped semiconductor material (e.g., ion-doped polysilicon), which is compatible with semiconductor manufacturing processes, facilitates mass production, and reduces process costs. In other embodiments, the bow material layer may also be made of a metal material, such as aluminum, copper, or tungsten.

[0121] In this embodiment, the side electrodes 102 are electrically isolated from each other so that driving signals can be independently applied to the corresponding side electrodes 102 .

[0122] In this embodiment, along a line perpendicular to the surface normal of the fixing platform 100 , the size of the side electrode 102 is smaller than the size of the internal structure 101 .

[0123] Along the normal line perpendicular to the surface of the fixed platform 100, the size of the side electrode 102 is smaller than the size of the internal structure 101, which is beneficial to increasing the removal process window of the sacrificial layer at the corners of the side electrode 102 and the top electrode 107, so that the sacrificial layer at the corners of the side electrode 102 and the top electrode 107 is easy to remove, making it difficult for the sacrificial layer to remain, thereby improving the formation quality of the moving mechanism and the output per unit time.

[0124] In other embodiments, along a line perpendicular to the surface normal of the fixed platform, the size of the side electrode is equal to the size of the internal structure.

[0125] Along the normal line perpendicular to the surface of the fixed platform 100, the size of the side electrode 102 is equal to the size of the internal structure 101, so that the length of the release channel of the sacrificial layer between the top electrode 107 and the internal structure 101 is smaller, and at the same time, the size of the side electrode 207 in the direction of the normal line of the surface of the fixed platform 200 is larger. When the semiconductor is working, it is beneficial to make the electrostatic force between the side electrode 102 and the side driving electrode 1011 larger, which is beneficial to improving the performance of the moving mechanism.

[0126] In this embodiment, the material of the bottom electrode 103 is a conductive material, such as a metal material or an ion-doped semiconductor material. The description of the material of the bottom electrode 103 can refer to the corresponding description of the side driving electrode 1012 above, which is not repeated here.

[0127] In this embodiment, the bottom electrodes 103 are one or more pairs, and the bottom electrodes 103 are spaced apart along the first direction. The bottom electrodes 103 extend along the second direction to cover the fixed platform 100 of the second dimension of the side portion of the internal structure 101 .

[0128] In this embodiment, the bottom electrode 103 has a first opening 104 exposing the fixing platform 100 . A plurality of bottom electrodes 103 are exposed from the fixing platform 100 as the first opening 104 . Accordingly, the first opening 104 is an irregular pattern.

[0129] In this embodiment, in the normal direction of the fixing platform 100 , a portion of the sidewall of the first opening 104 is flush with the sidewall of the side electrode 102 .

[0130] In the normal direction of the surface of the fixed platform 100, part of the side wall of the first opening 104 is flush with the side wall of the side electrode 102, which increases the removal process window of the sacrificial layer at the corner of the side electrode 102 and the bottom electrode 103, so that the sacrificial layer at the corner of the side electrode 102 and the bottom electrode 103 is easy to remove, making it difficult for the sacrificial layer to remain, thereby improving the formation quality of the moving mechanism and the output per unit time.

[0131] The moving mechanism also includes: a fixed electrode 106, located on the fixed platform 100, the fixed electrode 106 is spaced apart from the internal structure 101, and the extension direction of the fixed electrode 106 is the same as the extension direction of the internal structure 201; the two ends of the elastic structure 105 are respectively connected to the fixed electrode 106 and the bottom electrode 103.

[0132] When the movable structure is in operation, the fixed electrode 204 is fixedly connected to the fixed platform 100, providing a fixed end for the elastic structure 105. When the electrostatic force between the side electrode 102 and the side drive electrode 1012 disappears, the elastic structure 105 resets the side electrode 102. Furthermore, the elastic structure 105 prevents the bottom electrode 103 from displacing in the direction normal to the surface of the fixed platform 100. In other words, it prevents the bow-shaped electrode from displacing in the direction normal to the surface of the fixed platform 100.

[0133] In this embodiment, the elastic structure 105 is a spring wire. Specifically, the elastic structure 105 can be a Z-shaped spring wire.

[0134] In this embodiment, the elastic structure 105 and the fixed electrode 106 correspond one-to-one with the bottom electrode 103. In this embodiment, the bottom electrodes 103 are one or more pairs, and correspondingly, the elastic structure 105 and the fixed electrode 106 are one or more pairs.

[0135] In this embodiment, the fixed electrodes 106 correspond one-to-one to the elastic structures 105. The fixed electrodes 106 are made of a conductive material. Specifically, the fixed electrodes 106 are made of a metal material or a semiconductor material doped with ions. The metal material includes aluminum, copper, or tungsten.

[0136] The moving mechanism further includes a top electrode 107 suspended on the top of the internal structure 101 . The top electrode 107 has a second opening 108 exposing the internal structure 101 . The top electrode 107 is connected to the top of the side electrode 102 .

[0137] During the formation of the moving mechanism, a sacrificial layer is formed between the side electrode 102 and the internal structure 101, and between the top electrode 107 and the top of the fixed platform 100. The second opening 108 of the top electrode 107 exposes the sacrificial layer on the top of the fixed platform 100. The second opening 108 reduces the length of the release path for the sacrificial layer between the top electrode 107 and the top of the fixed platform 100, which facilitates the removal of the sacrificial layer between the top electrode 107 and the top of the fixed platform 100. In addition, the second opening 108 also reduces the length of the release path for the sacrificial layer between the side electrode 102 and the internal structure 101, reducing the difficulty of removing the sacrificial layer between the side electrode 102 and the internal structure 101. In summary, the second opening 108 can reduce the difficulty of removing the sacrificial layer, accelerate the removal rate of the sacrificial layer, prevent the sacrificial layer from remaining, and improve the formation quality of the moving mechanism and the output per unit time.

[0138] In this embodiment, the top electrode 107 is made of a conductive material. Specifically, the top electrode 107 is made of a metal material or a semiconductor material doped with ions. The metal material includes aluminum, copper, or tungsten.

[0139] In this embodiment, there are multiple top electrodes 107 , the top electrodes 107 are spaced apart along the first direction, the top electrodes 107 extend along the second direction, and the multiple second openings 108 are spaced apart in the first direction.

[0140] Specifically, the second opening 108 is surrounded by the side electrodes 102 and the top electrode 107 , and the second opening 108 is rectangular.

[0141] In this embodiment, the second opening 108 exposes the area between the internal structure 101 and the side electrode 102. Specifically, the second opening 108 exposes the area between the internal structure 101 and one side electrode 102, or exposes the area between the internal structure 101 and two side electrodes 102.

[0142] The second opening 108 exposes the area between the internal structure 101 and the side electrode 102, thereby increasing the process window for removing the sacrificial layer at the corners of the side electrode 102 and the top electrode 107, so that the sacrificial layer at the corners of the side electrode 102 and the top electrode 107 is easy to remove, making it less likely that the sacrificial layer will remain, thereby improving the formation quality of the moving mechanism and the output per unit time.

[0143] It should be noted that the second direction is parallel to the surface of the fixing platform 100 and perpendicular to the extension direction of the internal structure 101 ; the top electrodes 107 and the side electrodes 102 correspond one to one in the second direction.

[0144] In this embodiment, the top electrode 107 and the side electrodes 102 are formed in the same etching step, which is beneficial to simplifying the formation process of the top electrode 107 and the side electrodes 102 and improving the output per unit time of the moving mechanism.

[0145] In this embodiment, in the first direction, the size of the bottom electrode 103 is L4; in the second direction, the size of the bottom electrode 103 is L3, the size of the top electrode 107 is L1, and in the direction perpendicular to the surface normal of the fixed platform 100, the size of the side electrode 102 is L2. The maximum value of the shortest release channel for removing the sacrificial layer is Max(L2, L4). The shortest release channel length of the sacrificial layer is small, so that the sacrificial layer is easy to remove.

[0146] refer to Figures 24 to 26 , is a schematic structural diagram of the second embodiment of the mobile mechanism of the present invention, wherein Figure 25 and Figure 26 Both Figure 24 Cross-section along the NN direction.

[0147] The present embodiment is similar to the first embodiment in that, in the normal direction of the surface of the fixing platform 500 , a portion of the sidewall of the first opening 504 is flush with the sidewall of the side electrode 502 .

[0148] The difference between this embodiment and the first embodiment is that the first opening 504 is surrounded by the bottom electrode 503 and the side electrode 502 , and the first opening 504 includes a circular opening or a polygonal opening.

[0149] The first opening 504 reduces the minimum release channel between the bottom electrode 503 and the fixed platform 500, increases the removal process window of the sacrificial layer at the corners of the side electrode 502 and the bottom electrode 503, makes it difficult for the sacrificial layer at the corners of the side electrode 502 and the bottom electrode 503 to remain, and also makes the bottom electrodes 503 connected to each other, which is beneficial to improving the structural strength of the bow electrode.

[0150] Specifically, such as Figure 25 As shown, the first opening 504 is surrounded by the bottom electrode 503 and the side electrode 502 , and the first opening 504 includes a polygonal opening, such as a square opening.

[0151] Specifically, such as Figure 26 As shown, the first opening 504 is surrounded by the bottom electrode 503 and the side electrode 502 , and the first opening 504 includes a circular opening.

[0152] refer to Figures 27 to 29 , is a schematic structural diagram of the third embodiment of the mobile mechanism of the present invention, wherein Figure 28 and Figure 29 Both Figure 27 The cross-sectional view is taken along the MM direction, and only the region of the top electrode 607 is shown.

[0153] This embodiment is similar to the first embodiment in that the second opening 608 exposes the area between the internal structure 601 and the side electrode 602 .

[0154] The difference between this embodiment and the first embodiment is that the second opening 608 is surrounded by the top electrode 607 , and the second opening 608 includes a circular opening or a polygonal opening.

[0155] The second opening 608 reduces the length of the shortest release channel of the sacrificial layer at the top of the top electrode 607 and the internal structure 601, while increasing the removal process window of the sacrificial layer at the corners of the side electrode 602 and the top electrode 607, so that the sacrificial layer at the corners of the side electrode 602 and the top electrode 607 is not easy to remain, and the top electrodes 607 are connected to each other, which is beneficial to improving the structural strength of the bow electrode.

[0156] like Figure 28 As shown, the second opening 608 is surrounded by the top electrode, and the second opening 608 includes a circular opening.

[0157] like Figure 29 As shown, the second opening is surrounded by the top electrode, and the second opening 608 includes a polygonal opening, such as a rectangular opening.

[0158] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. A method for forming a moving mechanism, characterized in that: include: providing a fixed platform and an internal structure located on the fixed platform; forming a sacrificial layer conformally covering the internal structure and the fixed platform, wherein the sacrificial layer is located on a surface of the fixed platform and a top surface and a sidewall surface of the internal structure; forming an arcuate material layer conformally covering the sacrificial layer; Etching the bow-shaped material layer to form an bow-shaped electrode, wherein the bow-shaped electrode includes a side electrode opposite to the sidewall of the internal structure and a bottom electrode opposite to the fixed platform, wherein the bottom electrode has a first opening, and the first opening exposes a portion of the sacrificial layer on the fixed platform; The sacrificial layer is removed.

2. The method for forming a moving mechanism according to claim 1, wherein: The bow-shaped electrode further includes a top electrode located on the top of the inner structure, wherein the top electrode has a second opening exposing the sacrificial layer.

3. The method for forming a moving mechanism according to claim 1 or 2, wherein: Along a normal line perpendicular to the surface of the fixed platform, the size of the side electrode is smaller than or equal to the size of the internal structure.

4. The method for forming a moving mechanism according to claim 2, wherein: In the step of etching the bow-shaped material layer to form the bow-shaped electrode, the bow-shaped material layer directly above the sacrificial layer is etched to form a second opening, wherein the size of the side electrode along a line perpendicular to the surface normal of the fixed platform is equal to the size of the internal structure; Alternatively, the bow-shaped material layer directly above the sacrificial layer and the bow-shaped material layer of the side portion of the sacrificial layer are etched to form the second opening, and along the normal perpendicular to the surface of the fixed platform, the size of the side electrode is smaller than the size of the internal structure.

5. The method for forming a moving mechanism according to claim 1, wherein: The extending direction of the internal structure is a first direction, and in a plane parallel to the surface of the fixed platform, the extending direction perpendicular to the internal structure is a second direction; The step of etching the bow-shaped material layer to form the bow-shaped electrode comprises: forming a plurality of shielding layers distributed along a first direction and spanning the internal structure on the arched material layer, wherein the shielding layers cover a portion of the size of the arched material layer in a second direction on the side of the internal structure; The bow-shaped material layer is etched using the blocking layer as a mask to form the first opening and the second opening.

6. The method for forming a moving mechanism according to claim 2, wherein: In the step of etching the bow-shaped material layer to form the bow-shaped electrode, the first opening is formed; after the first opening is formed, the second opening is formed; Alternatively, forming the second opening; After forming the second opening, the first opening is formed.

7. The method for forming a moving mechanism according to claim 1 or 2, wherein: In the step of forming the bow-shaped electrode, in the normal direction of the fixed platform, a portion of the sidewall of the first opening is flush with the sidewall of the side electrode.

8. The method for forming a moving mechanism according to claim 7, wherein: In the step of forming the bow-shaped electrode, the first opening is surrounded by the bottom electrode and the side electrode, and the first opening includes a circular opening or a polygonal opening.

9. The method for forming a moving mechanism according to claim 2, wherein: In the step of forming the bow-shaped electrode, the second opening exposes a region between the internal structure and the side electrode.

10. The method for forming a moving mechanism according to claim 9, wherein: In the step of forming the bow-shaped electrode, the second opening is surrounded by the top electrode, and the second opening includes a circular opening or a polygonal opening.

11. The method for forming a moving mechanism according to claim 2, wherein: The bow-shaped material layer is etched by a dry etching process to form the bow-shaped electrode.

12. A moving mechanism, characterized in that: include: Fixed platform; An internal structure, separated from the fixed platform; a side electrode, located on the fixed platform, wherein the side electrode is spaced apart from a side wall of the internal structure; The bottom electrode is suspended on the fixing platform and connected to the bottom of the side electrode. The bottom electrode has a first opening that exposes the fixing platform.

13. The moving mechanism according to claim 12, wherein: The moving mechanism further includes a top electrode suspended on the top of the internal structure, the top electrode having a second opening exposing the internal structure, and the top electrode connected to the top of the side electrode.

14. The moving mechanism according to claim 13, wherein: The extending direction of the internal structure is a first direction, and on a plane parallel to the surface of the fixed platform, the direction perpendicular to the extending direction of the internal structure is a second direction; There are multiple bottom electrodes, and the multiple bottom electrodes are spaced apart along the first direction. The bottom electrodes extend along the second direction to cover a portion of the fixed platform on the side of the internal structure in the second direction. There are a plurality of top electrodes, the top electrodes are spaced apart along a first direction, the top electrodes extend along a second direction, and a plurality of second openings are spaced apart in the first direction.

15. The moving mechanism according to claim 12 or 13, characterized in that: In the normal direction of the fixed platform, a portion of the sidewall of the first opening is flush with the sidewall of the side electrode.

16. The moving mechanism according to claim 15, wherein: The first opening is surrounded by the bottom electrode and the side electrodes, and the first opening includes a circular opening or a polygonal opening.

17. The moving mechanism according to claim 13, wherein: The second opening exposes a region between the internal structure and the side electrode.

18. The moving mechanism according to claim 17, wherein: The second opening is surrounded by the top electrode, and the second opening includes a circular opening or a polygonal opening.

19. The moving mechanism according to claim 14, wherein: The second direction is parallel to the surface of the fixed platform and perpendicular to the extension direction of the internal structure; The bottom electrodes correspond to the top electrodes in a one-to-one manner in the second direction.

20. The moving mechanism according to claim 12, wherein: Along a normal line perpendicular to the surface of the fixed platform, the size of the side electrode is smaller than or equal to the size of the internal structure.

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