Ingot growth device

Abstract

The present invention discloses an ingot growth apparatus. The ingot growth apparatus according to an embodiment of the present invention includes: a growth furnace configured to accommodate molten silicon therein for growing an ingot; a susceptor surrounding an outer side surface of the main crucible and including a plurality of heating members electrically insulated from each other; and a heater configured to generate a magnetic field and heat the plurality of heating members by electromagnetic induction generated by the magnetic field, wherein the plurality of heating members form a ring along the outer side surface of the main crucible.

Description

Technical Field

[0001] The present invention relates to an ingot growth apparatus. Background Art

[0002] Single crystal silicon is a basic material for most semiconductor components, and these substances are to be manufactured into single crystals with high purity. One of such manufacturing methods is the Czochralski method.

[0003] In this Czochralski crystallization method, after silicon is placed in a crucible, the silicon is melted by heating the crucible. Moreover, in a state where a single crystal seed is in contact with this molten silicon, while rotating, it is pulled upward to grow an ingot having a specified diameter.

[0004] In a continuous growth type Czochralski method (CCz: Continuous Czochralski), which is one of such Czochralski methods, solid polycrystalline silicon or molten silicon is continuously injected into the inside of the crucible to replenish the consumed molten silicon and continuously grow the ingot.

[0005] In order to grow an ingot by this continuous growth type Czochralski method, it is particularly important to ensure the temperature uniformity of the molten silicon injected into the crucible by heating the crucible. In particular, if the temperature uniformity of the ingot growth region in the crucible where the ingot grows cannot be ensured, there will be a problem of a decrease in the single crystal yield of the ingot.

[0006] And, in order to ensure the target temperature distribution of the molten silicon in the ingot growth environment, the crucible is heated by electric energy. In the continuous growth type Czochralski method, such electricity costs account for a large proportion in the ingot manufacturing cost, and thus there is a need to reduce the electricity cost. Summary of the Invention

[0007] According to an embodiment of the present invention, an object of the present invention is to provide an ingot growth apparatus as follows, that is, while ensuring the temperature uniformity of molten silicon during the heating process of the molten silicon, the energy efficiency of the electric energy used to heat the crucible is improved.

[0008] The ingot growth apparatus according to an embodiment of the present invention may include: a growth furnace having a main crucible disposed inside to accommodate molten silicon for growing an ingot; a base surrounding an outer side surface of the main crucible and including a plurality of heating members electrically insulated from each other; and a heater for generating a magnetic field and heating the plurality of heating members by electromagnetic induction generated by the magnetic field, and the plurality of heating members may form a ring along the outer side surface of the main crucible.

[0009] In this case, the above-mentioned base can form a shape in which the above-mentioned plurality of heating components are divided along a horizontal direction parallel to the bottom surface of the above-mentioned growth furnace.

[0010] In this case, the above-mentioned base can form a shape in which the above-mentioned plurality of heating components are divided along a vertical direction perpendicular to the bottom surface of the above-mentioned growth furnace.

[0011] In this case, the above-mentioned plurality of heating components can be formed of a material including graphite.

[0012] In this case, the above-mentioned base can further include a plurality of insulating components that are disposed between the above-mentioned plurality of heating components to combine the above-mentioned plurality of heating components.

[0013] In this case, the above-mentioned plurality of insulating components can be formed of a non-magnetic material.

[0014] In this case, the ends of the above-mentioned plurality of heating components can include curved surfaces.

[0015] In this case, the above-mentioned ingot growth device can further include a blocking portion that is disposed between the above-mentioned heater and the bottom surface of the above-mentioned growth furnace to block the electromagnetic induction generated by the above-mentioned magnetic field on the lower side of the above-mentioned heater and the above-mentioned base.

[0016] Moreover, the ingot growth device according to an embodiment of the present invention can include: a growth furnace that internally houses a main crucible for melting silicon to grow an ingot; a base that surrounds the outer side surface of the above-mentioned main crucible; and a heater that is provided with a coil, the above-mentioned coil is formed to wind along the outer side surface of the above-mentioned base and generates a magnetic field, and heats the above-mentioned base by means of the electromagnetic induction generated by the above-mentioned magnetic field. The above-mentioned coil can include: a first portion that is formed along the outer side surface of the above-mentioned base in such a manner that the pulling direction of the above-mentioned ingot and the magnetic field direction at the center of the above-mentioned coil are parallel; and a second portion that extends from the above-mentioned first portion at an inclination angle with the above-mentioned first portion reaching a specified angle.

[0017] In this case, the above-mentioned coil can cause the above-mentioned first portion and the above-mentioned second portion to form a single turning shape on the outer side surface of the above-mentioned base, and can form multiple turning shapes along the up and down direction of the above-mentioned base.

[0018] In this case, the length of the above-mentioned second portion can be within 1 / 18 of the total length of the above-mentioned coil.

[0019] In this case, the above-mentioned heater can further include an outer cover that is formed to surround the outer side surface of the above-mentioned coil for blocking the above-mentioned coil from being exposed to the internal space of the above-mentioned growth furnace.

[0020] The ingot growth device according to an embodiment of the present invention enables a plurality of heating components to individually generate current and heat by electromagnetic induction, thereby ensuring temperature uniformity of molten silicon.

[0021] In addition, the ingot growth device according to an embodiment of the present invention enables a plurality of heating components to heat individually, thereby improving the energy efficiency of the electric energy used to heat the main crucible.

[0022] According to another embodiment of the present invention, in the ingot growth device, the first part of the coil is perpendicular to the pulling direction of the ingot in such a way as to minimize the influence of the magnetic field generated by the coil on the ingot grown into a single crystal, thereby improving the single crystal yield of the ingot. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A diagram for briefly showing the ingot growth device according to an embodiment of the present invention.

[0024] Figure 2 A perspective view highlighting the base of the ingot growth device according to an embodiment of the present invention.

[0025] Figure 3 For Figure 2 sectional view.

[0026] Figure 4 A sectional view highlighting the base of the ingot growth device according to another embodiment of the present invention.

[0027] Figure 5a A perspective view of the form in which the base integrated in an undivided manner is heated.

[0028] Figure 5b For Figure 5a sectional view.

[0029] Figure 6a A perspective view showing the form in which the base according to an embodiment of the present invention is heated.

[0030] Figure 6b For Figure 6a sectional view.

[0031] Figure 7a A perspective view showing the form in which the base according to another embodiment of the present invention is heated.

[0032] Figure 7b For Figure 7a sectional view.

[0033] Figure 8 A side view briefly showing the coil of the ingot growth device according to another embodiment of the present invention.

[0034] Figure 9 When viewed from above Figure 8The figure of the coil in

[0035] Figure 10 FIG. is a perspective view briefly showing a coil wound in a spiral shape.

[0036] Figure 11a FIG. is a view showing the state of heating the base by observing the coil of another embodiment of the present invention from the upper side.

[0037] Figure 11b FIG. is a view showing the state of heating the base by observing from the upper side through the Figure 10 coil wound in a spiral shape in

[0038] Figure 12a FIG. is a chart showing Figure 10 the temperature deviation of the upper side region of the base in the comparative example in

[0039] Figure 12b FIG. is a chart showing Figure 10 the temperature deviation of the central region of the base in the comparative example in

[0040] Description of Reference Numerals

[0041] 100: Ingot growth apparatus 110: Growth furnace

[0042] 120: Main crucible 130: Base

[0043] 131, 132: Multiple heating components 140: Heater

[0044] 141, 341: Coil 342: First part

[0045] 343: Second part Detailed Description of the Invention

[0046] The words and terms used in this specification and the scope of the invention claimed should not be construed as being limited to the meanings commonly understood or those in a dictionary. Based on the principle that the inventor can define terms and concepts in order to best explain his invention, they should be construed as meanings and concepts consistent with the technical idea of the present invention.

[0047] Therefore, the embodiments described in this specification and the structures shown in the drawings belong to a preferred embodiment of the present invention and do not fully represent the technical idea of the present invention. At the time of filing the application of the present invention, there may be various equivalents and variations that can be substituted for the corresponding structures.

[0048] In this specification, terms such as "including" or "having" should be understood to merely indicate the existence of the features, numbers, steps, actions, structural elements, components, or combinations thereof described in the specification, rather than precluding the existence or additional possibility of one or more other features, numbers, steps, actions, structural elements, components, or combinations thereof.

[0049] As long as there are no special circumstances, expressions such as a certain structural element being "in front of", "behind", "above", or "below" other structural elements not only include the case where the certain structural element is "in front of", "behind", "above", or "below" other structural elements in a manner of direct contact with the other structural elements, but also include the case where other structural elements are provided in between. And, as long as there are no special circumstances, the case where a certain structural element is "connected to" other structural elements and the like not only includes the case of direct connection, but also includes the case of indirect connection.

[0050] Hereinafter, the ingot growth device of an embodiment of the present invention will be described with reference to the drawings. In this specification, in order to simplify the drawings, during the description of the ingot growth device of an embodiment of the present invention, structures unrelated to the content of the present invention will not be shown in detail or will not be shown, and the ingot growth device of the present invention will be described centering on the content related to the idea of the present invention.

[0051] In this specification, the arrow direction of the Z-axis is referred to as the upper side of the growth furnace. The lower side means the direction opposite to the above upper side.

[0052] Figure 1 It is a diagram briefly showing the ingot growth device of an embodiment of the present invention.

[0053] Refer to Figure 1 , the ingot growth device 100 of an embodiment of the present invention may include a growth furnace 110, a main crucible 120, a base 130, and a heater 140.

[0054] The above growth furnace 110 has an internal space 110a that maintains a vacuum state, enabling the ingot I to grow in the internal space 110a. The main crucible 120 described below is disposed in the above internal space 110a.

[0055] A vacuum pump (not shown) and an inert gas supply unit (not shown) are provided in the above growth furnace 110. The above vacuum pump can maintain a vacuum atmosphere in the above internal space 110a. And, the above inert gas supply unit supplies an inert gas to the above internal space 110a. For example, the above inert gas may be argon (Ar).

[0056] The above-mentioned main crucible 120 is accommodated in the above-mentioned internal space 110a of the above-mentioned growth furnace 110. The above-mentioned main crucible 120 can accommodate molten silicon M. The above-mentioned main crucible 120 is roughly formed in the shape of a reverse dome. Moreover, the shape of the above-mentioned main crucible 120 is not limited to the reverse dome shape, and various shapes such as a cylinder shape can be formed.

[0057] Furthermore, the above-mentioned main crucible 120 is formed of quartz material. However, the above-mentioned main crucible 120 is not limited to being formed of quartz material, and can be formed of various materials that have heat resistance at temperatures above about 1400°C and can withstand drastic temperature changes.

[0058] Moreover, in a state where the single crystal seed S is in contact with the molten silicon M accommodated in the above-mentioned main crucible 120, if the metal wire W connected to the upper side of the above-mentioned growth furnace 110 is pulled upward (Z-axis) with respect to the single crystal seed S, the ingot I grows in the pulling direction (Z-axis) in the form of an ingot I having a specified diameter.

[0059] And, a preliminary melting part (not shown) for receiving a solid silicon raw material and melting it is provided in the above-mentioned growth furnace 110. The above-mentioned preliminary melting part supplies the above-mentioned molten silicon to the above-mentioned main crucible 120.

[0060] The above-mentioned susceptor 130 surrounds the outer side surface of the above-mentioned main crucible 120. The above-mentioned susceptor 130 supports the above-mentioned main crucible 120. The inner side surface of the above-mentioned susceptor 130 can be formed in a shape corresponding to the outer side surface of the above-mentioned main crucible 120. For example, if the above-mentioned main crucible 120 is formed in the shape of a reverse dome, the above-mentioned susceptor 130 is also formed in the shape of a reverse dome.

[0061] Therefore, even if the above-mentioned main crucible 120 is deformed under high temperature conditions due to the use of quartz material, the above-mentioned susceptor 130 can surround and support the above-mentioned main crucible 120 in such a manner that the above-mentioned main crucible 120 maintains the state of accommodating the above-mentioned molten silicon M. The above-mentioned susceptor 130 will be described in detail with reference to the accompanying drawings in the following content.

[0062] And, a susceptor support part 150 for supporting the above-mentioned susceptor 130 is disposed below the above-mentioned growth furnace 110. The upper end of the above-mentioned susceptor support part 150 is formed in a shape corresponding to the lower end of the above-mentioned susceptor 130. And, in a state where the above-mentioned susceptor support part 150 supports the above-mentioned susceptor 130 below the above-mentioned growth furnace 110, the above-mentioned susceptor support part 150 rotates together with the above-mentioned susceptor 130. Therefore, in a state where the above-mentioned main crucible 120 accommodates the above-mentioned molten silicon M, the above-mentioned main crucible 120 rotates together with the susceptor 130.

[0063] Further, a driving unit (not shown) for providing a rotational force is provided in the growth furnace 110 in such a manner that the base support portion 150 can rotate. The base support portion 150 is rotatably connected to the driving unit. When the driving unit receives power and provides a rotational force to the base support portion 150, the main crucible 120 rotates together with the base 130.

[0064] Further, a heater 140 for heating the base 130 is provided in the growth furnace 110. The heater 140 includes: a coil 141 that generates a magnetic field by receiving power; and an outer cover 142 for surrounding the coil 141.

[0065] The coil 141 generates an electric current in the base 130 by means of electromagnetic induction generated by the magnetic field. In this case, the electric current generated in the base 130 is converted into heat energy. Therefore, the heater 140 heats the base 130. The heat of the base 130 is conducted to the main crucible 120, and the base 130 thereby heats the main crucible 120.

[0066] The outer cover 142 supports the coil 141 in such a manner that the coil 141 maintains a prescribed shape. The outer cover 142 blocks the coil from being exposed to the internal space 110a of the growth furnace 110. Therefore, the outer cover 142 can prevent arc discharge due to plasma phenomenon in the vacuum state or arc discharge due to contact between the coil 141 and an inert gas (e.g., argon) present in the internal space 110a when the coil 141 receives power and forms a magnetic field by blocking the coil 141 from being exposed to the internal space 110a of the growth furnace 110.

[0067] The heater 140 is formed so as to surround the outer side surface of the base 130. And the heater 140 can heat the base 130 by electromagnetic induction which is an induction heating method. When the heater 140 adopts the induction heating method, the heater 140 is arranged at a distance from the outer side surface of the base 130, thereby preventing the heat of the base 130 from being conducted back to the heater 140.

[0068] Moreover, a heater support portion 160 for supporting the heater 140 is disposed below the growth furnace 110. The heater support portion 160 may be generally formed in a cylindrical shape. The base support portion 150 is disposed inside the heater support portion 160 formed in the cylindrical shape. Further, the upper end of the heater support portion 160 is formed in a shape corresponding to the lower end of the heater 140, whereby the heater 140 is disposed at the upper end of the heater support portion 160.

[0069] Moreover, a blocking portion 170 is provided below the heater 140, and the blocking portion 170 is configured to block electromagnetic induction caused by a magnetic field generated in the heater 140.

[0070] The blocking portion 170 is disposed between the heater 140 and the bottom surface 112 of the growth furnace 110. The blocking portion 170 is formed of a non-magnetic material and does not generate heat due to electromagnetic induction caused by a magnetic field generated in the heater 140. Further, the blocking portion 170 is coupled to the heater support portion 160.

[0071] Moreover, the blocking portion 170 is disposed between the lower side of the base 130 and the bottom surface 112 of the growth furnace 110, thereby blocking heat generated in the base 130 from being conducted to the bottom surface 112 of the growth furnace 110 or devices disposed between the base 130 and the bottom surface 112.

[0072] Moreover, a through hole (not shown) through which the base support portion 150 passes is formed in the blocking portion 170. Accordingly, the base support portion 150 passes through the through hole through the blocking portion 170, thereby preventing interference between the blocking portion 170 and the rotating base support portion 150.

[0073] Figure 2 FIG. is a perspective view of a base of an ingot growth apparatus according to an embodiment of the present invention, for highlighting. Figure 3 is Figure 2 a cross-sectional view of.

[0074] Referring to Figure 2 and Figure 3 the base 130 includes a plurality of heating components 131, 132 and a plurality of insulating components 133 disposed between the plurality of heating components 131, 132.

[0075] The above-mentioned multiple heating components 131 and 132 form the outer shape of the inverted dome-shaped base 130. The above-mentioned multiple heating components 131 and 132 are electrically insulated from each other. And, the above-mentioned multiple heating components 131 and 132 are formed of a material including graphite. However, the material of the above-mentioned multiple heating components 131 and 132 is not limited to graphite and can be formed of various materials with high heat resistance.

[0076] And, the above-mentioned base 130 can be formed into a shape in which the above-mentioned multiple heating components 131 and 132 are divided along a horizontal direction (Z-axis) parallel to the bottom surface 112 of the above-mentioned growth furnace 110 (refer to Figure 1 ). And, the above-mentioned multiple heating components 131 and 132 include: multiple first heating components 131 that form the side wall of the above-mentioned base 130; and multiple second heating components 132 that form the bottom of the above-mentioned base 130.

[0077] The above-mentioned multiple first heating components 131 can form a ring surrounding the outer side surface of the above-mentioned main crucible 120 (refer to Figure 1 ). And, the above-mentioned multiple first heating components 131 are formed such that the current induced by magnetic field induction flows along the outer side surface of the above-mentioned main crucible 120 (refer to Figure 1 ). Thus, the current induced by the magnetic field will flow separately in the above-mentioned multiple first heating components 131, thereby ensuring the uniformity of the overall temperature of the above-mentioned base 130.

[0078] And, the sizes of the above-mentioned multiple first heating components 131 gradually increase from the upper side to the lower side. Thus, it is adjusted in such a way that heat is not concentrated on the upper side of the above-mentioned base 130.

[0079] And, according to various embodiments of the present invention, the heat generation degree of the upper side region, the central region, or the lower side region of the side wall of the above-mentioned base 130 can be adjusted by designing the above-mentioned multiple first heating components 131 in different sizes.

[0080] And, according to an embodiment of the present invention, three of the above-mentioned multiple first heating components 131 can be provided, but it is not limited thereto, and four or more can be provided.

[0081] On the other hand, when sharp shapes are formed at the ends 131a and 131b of the above-mentioned multiple first heating components 131, the current will flow concentratedly at the ends 131a and 131b, and there will be a problem of excessive heat generation.

[0082] To solve this problem, curved surfaces 131a and 131b are provided at the ends 131a and 131b of the plurality of first heating components 131. Thereby, the current generated by electromagnetic induction is prevented from flowing concentratedly on the curved surfaces 131a and 131b of the plurality of first heating components 131, thereby preventing the curved surfaces 131a and 131b from overheating.

[0083] The plurality of insulating components 133 are arranged between the plurality of heating components 131 and 132 to combine the plurality of heating components 131 and 132. The plurality of insulating components 133 and the plurality of first heating components 131 together form the side wall of the base 130.

[0084] Moreover, the plurality of insulating components 133 are formed of a non-magnetic material. For example, the plurality of insulating components 133 may be formed of a ceramic material. Thereby, the plurality of insulating components 133 will block the plurality of heating components 131 and 132 from being electrically connected to each other.

[0085] Figure 4 A cross-sectional view of the base of the ingot growth apparatus according to another embodiment of the present invention is shown for emphasis.

[0086] Refer to Figure 4 , the base 230 of the ingot growth apparatus according to another embodiment of the present invention includes a plurality of heating components 231 and 232 and a plurality of insulating components 233 arranged between the plurality of heating components 231 and 232. Moreover, when the structural elements in another embodiment of the present invention are the same as or similar to the structural elements in the previously described embodiment, the previous description will be substituted.

[0087] The base 230 forms a shape in which the plurality of heating components 231 and 232 are divided along a vertical direction (Z-axis) perpendicular to the bottom surface 112 (refer to Figure 1 ) of the growth furnace 110 (refer to Figure 1 ). Thereby, the current induced by the magnetic field will flow separately in the plurality of heating components 231 and 232, thereby preventing overheating or non-heating in a specific part of the base 230.

[0088] According to another embodiment of the present invention, the base 230 may include 3 of the plurality of heating components 231 and 232, but is not limited thereto, and 4 or more may be provided.

[0089] Figure 5a A perspective view of the integrated base in an undivided state being heated, Figure 5b For Figure 5a A cross-sectional view of Figure 6a A perspective view showing the state of the base according to an embodiment of the present invention being heated, Figure 6b ForFigure 6a Cross-sectional view of Figure 7a Stereogram showing the heated state of the base showing another embodiment of the present invention, Figure 7b For Figure 7a Cross-sectional view of

[0090] Figures 5a to 7b It shows the result above the silicon melting point temperature presented by showing only the temperature of the base generated by the induction current alone excluding the temperature change caused by the heat exchange based on the base according to the heat flux simulation. Under these conditions, it should be noted that the temperature in the simulation reaches about 6000 °C at the highest, but the actual temperature in the ingot growth device is different from the temperature range shown in the drawings.

[0091] Refer to Figures 5a to 7b to compare the heat generation performance of the base integrated in an undivided manner (hereinafter referred to as "integrated base"), the base of the embodiment of the present invention, and the base of another embodiment of the present invention.

[0092] First, as Figure 5a and Figure 5b show, when the above-mentioned integrated base is heated by electromagnetic induction generated by a heater, the temperature of the upper end of the above-mentioned integrated base will be higher than the temperature of other parts of the above-mentioned integrated base. That is, the temperature gradually decreases from the upper side to the lower side of the above-mentioned integrated base. This is because a ring is formed at the upper end of the above-mentioned integrated base.

[0093] Moreover, as Figure 6a and Figure 6b show, the temperature difference between the temperature of the upper end of the base 130 (refer to Figure 3 ) of one embodiment of the present invention and the temperature of other parts is small.

[0094] Moreover, it can be seen that the temperature of the side wall of the base of one embodiment of the present invention is higher than the temperature of the side wall of the above-mentioned integrated base and is balanced as a whole. This is because the plurality of heating components are heated separately by electromagnetic induction in the above-mentioned manner.

[0095] As described above, the base of one embodiment of the present invention can improve the single crystal yield of the ingot by ensuring the balance of the generated temperature.

[0096] And, since the base of one embodiment of the present invention shows a higher temperature than the above-mentioned integrated base receiving the same power, the energy efficiency of the electric energy used in the ingot growth device can be improved.

[0097] Moreover, as Figure 7a and Figure 7b show, the base 230 of another embodiment of the present invention (refer to Figure 4The side wall of () generates heat at a higher temperature in a portion wider than the side wall of the integrated base described above.

[0098] This is because the base 230 of another embodiment of the present invention (refer to Figure 4 ) has multiple heating components that generate heat independently by electromagnetic induction.

[0099] On the other hand, although the base 230 of another embodiment of the present invention (refer to Figure 4 ) generates heat at a lower temperature than the base 130 of one embodiment of the present invention (refer to Figure 3 ), it generates heat at a high temperature in a portion wider than the above-mentioned integrated base. Therefore, when the base is composed of multiple divided heating components, the heat generation performance is improved.

[0100] Figure 8 FIG. is a side view of the coil of the ingot growth device according to another embodiment of the present invention for a brief illustration. Figure 9 Viewed from the upper side Figure 8 of the coil in.

[0101] The ingot growth device according to another embodiment of the present invention is similar in appearance to Figure 1 the ingot growth device of one embodiment of the present invention shown. Refer to Figure 8 and Figure 9 , and the coil 341 of the ingot growth device according to another embodiment of the present invention will be mainly inspected.

[0102] First, a base 330 is provided in the ingot growth device according to another embodiment of the present invention. As described above, the base 330 is formed in a shape in which multiple heating components are divided along the horizontal direction (X-axis) or the vertical direction (Z-axis).

[0103] Similar to the embodiment described above, the outer cover 142 surrounds the coil 341 and supports it in a manner that maintains the shape of the coil 341.

[0104] The coil 341 includes: a first portion 342, which is formed along the outer side surface of the base 330 in such a way that the pulling direction (Z-axis, refer to Figure 1 ) of the ingot I (refer to Figure 1 ) is parallel to the magnetic field direction C of the center O of the coil 341; and a second portion 343, which extends from the first portion 342 at an inclination angle with the first portion 342 reaching a specified angle.

[0105] In this case, the above-mentioned coil 341 causes the above-mentioned first part 342 and the above-mentioned second part 343 to form a single turning shape on the outer side surface of the above-mentioned base 330. Moreover, the above-mentioned coil 341 causes the above-mentioned first part 342 and the above-mentioned second part 343 to form multiple turning shapes along the up-and-down direction (Z-axis) of the above-mentioned base 330. Among them, the up-and-down direction (Z-axis) of the above-mentioned base 330 is the same as the pulling direction (Z-axis, refer to Figure 1 ) of the above-mentioned ingot.

[0106] As Figure 8 shown, when the above-mentioned base 330 is observed from the side, the above-mentioned first part 342 includes: a first turning shape part 342a, arranged on the upper side of the above-mentioned coil 341; a second turning shape part 342b, arranged at a distance below the above-mentioned first turning shape part 342a; and a third turning shape part 342c, arranged at a distance below the above-mentioned second turning shape part 342b. And, the above-mentioned first part 342 is not limited to the case formed by the first turning shape part 342a, the second turning shape part 342b, and the third turning shape part 342c. As Figure 8 shown, it may include multiple turning shape parts such as a fourth turning shape part and a fifth turning shape part.

[0107] Moreover, the first part 342 is configured to sequentially connect the above-mentioned first turning shape part 342a, the above-mentioned second turning shape part 342b, and the above-mentioned third turning shape part 342c. However, when observed from the side of the above-mentioned base 330, they can be arranged at a distance from each other.

[0108] The above-mentioned second part 343 includes: a first connection part 343a, arranged between one side of the above-mentioned first turning shape part 342a and the other side of the above-mentioned second turning shape part 342b; and a second connection part 343b, arranged between one side of the above-mentioned second turning shape part 342b and the other side of the above-mentioned third turning shape part 342c. Moreover, in the case where the above-mentioned first part 342 is composed of the above-mentioned multiple turning shape parts, the above-mentioned second part 343 is composed of multiple above-mentioned connection parts corresponding to the above-mentioned multiple turning shape parts.

[0109] The above-mentioned first connection part 343a is formed to be inclined from one side of the above-mentioned first turning shape part 342a towards the other side of the above-mentioned second turning shape part 342b. That is, the above-mentioned first turning shape part 342a is electrically connected to the above-mentioned second turning shape part 342b through the above-mentioned first connection part 343a, and the above-mentioned first turning shape part 342a is arranged to be along the above-mentioned horizontal direction (X-axis). Among them, the above-mentioned horizontal direction (X-axis) is perpendicular to the magnetic field direction C at the center of the above-mentioned coil 341.

[0110] The second connecting portion 343b is formed so as to incline from one side of the second turning portion 342b toward the other side of the third turning portion 342c. That is, the second turning portion 342b is electrically connected to the third turning portion 342c through the second connecting portion 343b, and the second turning portion 342b is arranged along the horizontal direction (X-axis). Similarly, the plurality of turning portions can be arranged along the horizontal direction (X-axis).

[0111] Therefore, the first portion 342 is formed along the horizontal direction (X-axis) which is perpendicular to the magnetic field direction C of the center of the coil 341, so that the force caused by the magnetic field generated in the coil 341 does not incline with respect to the single crystal growth direction of the ingot. That is, by arranging the first portion 342 of the coil 341 along the horizontal direction (X-axis), the yield of the single crystal of the ingot can be improved.

[0112] And, as Figure 9 shown, when observing the coil 341 from above, the first connecting portion 343a of the second portion 343 is arranged within a range where a predetermined angle is formed with respect to the center O of the concentric circle of the coil 341. The predetermined angle can reach about 20°. That is, the second portion 343 can be arranged within a range where about 20° is formed with respect to the center O of the concentric circle of the coil 341, and the length of the second portion 343 is within 1 / 18 of the total length of the coil 341. The length of the second portion 343 is determined according to the thickness of the coil 341. For example, the smaller the thickness of the coil 341, the smaller the length of the second portion 343.

[0113] As described above, as the coil 341 is formed in such a way as to minimize the length of the second portion 343, the influence of the force caused by the magnetic field generated in the second portion 343 on the single crystal of the ingot I (refer to Figure 1 ) can be minimized.

[0114] Figure 10 FIG. is a perspective view briefly showing a coil wound in a spiral shape, Figure 11a FIG. is a view of observing from above the state of heating a base by a coil according to another embodiment of the present invention, Figure 11b FIG. is a view of observing from above the state of heating a base by a coil wound in a spiral shape in Figure 10 , Figure 12a FIG. is a graph showing the temperature deviation of the upper region of the base in the comparative example in Figure 10 and the temperature deviation of the upper region of the base in another embodiment of the present invention, Figure 12b FIG. is a view showing Figure 10A chart of the temperature deviation in the central region of the base in the comparative example and the temperature deviation in the central region of the base in another embodiment of the present invention.

[0115] Refer to Figures 10 to 12b , and compare the performance of the coil wound in a spiral shape in the comparative example (hereinafter referred to as "the coil in the comparative example") and the coil in another embodiment of the present invention.

[0116] First, as Figure 10 shown, the coil 30 of the above comparative example is wound multiple times along the outer side surface of the base 20 in a spiral shape.

[0117] Moreover, compared with the coil in the comparative example shown in Figure 11b , taking the center of the concentric circle of the coil as a reference, Figure 11a the base heated by the coil of still another embodiment of the present invention shown in is substantially symmetric. That is, compared with the coil in the comparative example, the coil of another embodiment of the present invention heats the base in a manner that balances the temperature of the base. Thus, the coil of another embodiment of the present invention will ensure the temperature balance of the base.

[0118] And, as Figure 12a shown, the temperature deviation in the upper region of the base heated by the coil in the above comparative example reaches about 488 °C, and the temperature deviation in the upper region of the base heated by the coil of another embodiment of the present invention reaches about 420 °C. That is, compared with the coil in the above comparative example, the coil of another embodiment of the present invention makes the temperature deviation in the upper region of the base small.

[0119] And, as Figure 12b shown, the temperature deviation in the central region of the base heated by the coil in the above comparative example reaches about 305 °C, and the temperature deviation in the central region of the base heated by the coil of another embodiment of the present invention reaches about 273 °C. That is, compared with the coil in the above comparative example, the coil of another embodiment of the present invention makes the temperature deviation in the central region of the base small. Moreover, as described above, since it is a simulation result without considering the case of heat transfer to the main crucible and the molten silicon contained in the main crucible, it should be explained that there is a difference from the actual temperature of driving the ingot growth device.

[0120] As described above, compared with the coil in the above comparative example, the coil of another embodiment of the present invention will ensure the temperature balance of the base. And, the coil of another embodiment of the present invention will ensure the temperature balance of the base, thus preventing excessive power consumption during the process of ensuring the temperature balance of the base.

[0121] As described above, embodiments of the present invention have been described. However, the idea of the present invention is not limited to the embodiments presented in this specification. Those of ordinary skill in the technical field to which the present invention pertains and who understand the idea of the present invention can easily propose other embodiments by adding, changing, deleting, or adding structural elements within the same scope of the idea, and this also falls within the scope of the idea of the present invention.

Claims

1. An ingot growth device, characterized in that, comprising: a growth furnace, internally configured with a main crucible for containing molten silicon to grow an ingot, the main crucible forming an inverted dome shape; a base, surrounding the outer side of the main crucible, supporting the main crucible, and including a plurality of heating components that are electrically insulated from each other; and a heater, configured to generate a magnetic field and heat the plurality of heating components by electromagnetic induction generated by the magnetic field, the base further includes a plurality of insulating components that are disposed between the plurality of heating components to combine the plurality of heating components; the plurality of heating components form a ring along the outer side of the main crucible; the plurality of heating components include: a plurality of first heating components, having a ring shape and disposed along the inverted dome shape of the main crucible to form the side wall of the base; and a second heating component, forming the bottom of the base; the plurality of first heating components have different sizes from each other.

2. The ingot growth apparatus according to claim 1, wherein, The base is formed in a shape in which the plurality of heating components are divided along a horizontal direction parallel to the bottom surface of the growth furnace.

3. The ingot growth device according to claim 1, characterized in that, The base is formed in a shape in which the plurality of heating components are divided along a vertical direction perpendicular to the bottom surface of the growth furnace.

4. The ingot growth apparatus according to claim 1, characterized in that, The plurality of heating components are formed of a material including graphite.

5. The ingot growth device according to claim 1, characterized in that, The plurality of insulating components are formed of a non-magnetic material.

6. The ingot growth apparatus according to claim 1, wherein The ends of the plurality of heating components include curved surface portions.

7. The ingot growth apparatus according to claim 1, wherein It further includes a blocking portion, disposed between the heater and the bottom surface of the growth furnace, and blocking the electromagnetic induction generated by the magnetic field for the heater and the lower side of the base.

8. An ingot growth device, characterized in that, comprising: a growth furnace, internally configured with a main crucible for containing molten silicon to grow an ingot, the main crucible forming an inverted dome shape; a base, surrounding the outer side of the main crucible; and a heater, provided with a coil, the coil being formed to wind along the outer side of the base and generate a magnetic field, and heating the base by electromagnetic induction generated by the magnetic field, the coil includes: a first part, formed along the outer side of the base in such a manner that the pulling direction of the ingot and the magnetic field direction at the center of the coil are parallel; and a second part, extending from the first part in such a manner that the inclination with respect to the first part reaches a specified angle, the first part includes: a first turning shape portion, disposed on the upper side of the coil, a second turning shape portion, disposed at a distance below the first turning shape portion, and a third turning shape portion, disposed at a distance below the second turning shape portion; the second part includes: a first connecting portion, disposed between one side of the first turning shape portion and the other side of the second turning shape portion, and formed to be inclined from one side of the first turning shape portion toward the other side of the second turning shape portion, and a second connecting portion, disposed between one side of the second turning shape portion and the other side of the third turning shape portion, and formed to be inclined from one side of the second turning shape portion toward the other side of the third turning shape portion; The above-mentioned first connecting portion is arranged within a range of forming 20° between the center of the concentric circle of the above-mentioned coil, The length of the above-mentioned first connecting portion is within 1 / 18 of the total length of the above-mentioned coil.

9. The ingot growth apparatus according to claim 8, characterized in that, The above-mentioned coil enables the above-mentioned first portion and the above-mentioned second portion to form a single turning shape on the outer side surface of the above-mentioned base, and forms a multi-turning shape along the up-and-down direction of the above-mentioned base.

10. The ingot growth apparatus according to claim 8, wherein, The above-mentioned heater further includes an outer cover, which is formed in a manner of surrounding the outer side surface of the above-mentioned coil and is used to block the above-mentioned coil from being exposed to the internal space of the above-mentioned growth furnace.

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