Substrate processing apparatus

Abstract

A substrate processing apparatus is disclosed. The substrate processing apparatus includes: a load locking chamber, the pressure of the internal space of which varies between a first pressure and a second pressure lower than the first pressure; a transposition chamber connected to the load locking chamber; and a measuring unit that measures the particle level in the internal space, and the measuring unit is located outside the load locking chamber.

Description

Technical Field

[0001] The embodiments of the inventive concept described herein relate to a substrate processing apparatus. Background Technology

[0002] Plasma refers to an ionized gaseous state comprising ions, free radicals, and electrons. Plasma is generated by very high temperatures, strong electric fields, or radio frequency (RF) electromagnetic fields. Semiconductor device manufacturing processes may include etching processes that use plasma to remove thin films formed on substrates such as wafers. The etching process is performed when ions and / or free radicals contained in the plasma collide with or react with the thin film on the substrate.

[0003] Typically, an apparatus for processing substrates such as wafers using plasma includes a processing chamber for processing the substrate using plasma and a transfer chamber for transferring the substrate into the processing chamber. Furthermore, to improve substrate processing efficiency by using plasma, the processing chamber is essentially maintained in a vacuum pressure atmosphere, and thus the transfer chamber is also maintained in a vacuum pressure atmosphere. To transport the substrate to the transfer chamber maintained in a vacuum pressure atmosphere, a typical substrate processing apparatus includes a load-locking chamber through which the internal atmosphere supplied at the front end of the transfer chamber is switched between a vacuum pressure atmosphere and an atmospheric pressure atmosphere. The substrate is transported into the load-locking chamber, which has been switched to an atmospheric pressure atmosphere, then the atmosphere within the load-locking chamber is switched to a vacuum pressure atmosphere, and then the substrate is transported out of the load-locking chamber and into the transfer chamber. The substrate transported to the transfer chamber is then delivered to the processing chamber. The return of the processed substrate is performed in reverse order.

[0004] Processed and unprocessed substrates are repeatedly transported to the locking chamber. Impurities, such as fumes, that may be generated during substrate processing can adhere to the processed substrates, potentially causing fume contamination in the loading locking chamber. Therefore, it is necessary to periodically monitor the level of particles residing in the loading locking chamber that cause fumes. To achieve this, a measure of installing sensors to measure particle levels within the internal space of the loading locking chamber can be considered. However, with this measure, depending on the sensor size, the sensor may occupy a large portion of the internal space of the loading locking chamber, and depending on the sensor's installation location, errors in measuring particle levels may also occur. Furthermore, due to the sensor installation, very narrow orifices may be formed within the internal space of the loading locking chamber, thus creating the possibility of impurities such as particulate matter accumulating within these orifices. Summary of the Invention

[0005] An embodiment of the present invention provides a substrate processing apparatus that can measure particle levels in a chamber, the pressure of which changes within the chamber.

[0006] An embodiment of the present invention also provides a substrate processing apparatus that can periodically measure the particle level in a load-locking chamber.

[0007] Embodiments of the present invention also provide a substrate processing apparatus that can further improve the measurement accuracy of particle levels residing in a chamber.

[0008] The present invention is not limited thereto, and those skilled in the art will clearly understand other aspects of the invention not mentioned from the following description.

[0009] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes a load locking chamber, wherein the pressure in the internal space of the load locking chamber varies between a first pressure and a second pressure lower than the first pressure; a transposition chamber connected to the load locking chamber; and a measuring unit that measures the particle level in the internal space, and the measuring unit is located outside the load locking chamber.

[0010] According to an embodiment, the measuring unit may include a measuring channel disposed between the load locking chamber and the rotation chamber; and a measuring sensor mounted on the measuring channel to measure the particle level in the internal space.

[0011] According to an embodiment, the measuring unit may further include a measuring container mounted on the measuring channel and having a sensing space, and the measuring sensor can measure the particle level in the sensing space.

[0012] According to an embodiment, a gas supply line for supplying gas to the internal space and a pressure-reducing line for reducing the pressure of the internal space can be connected to the load-locking chamber.

[0013] According to an embodiment, the substrate processing apparatus may further include a controller that, when the particle level of the internal space is to be measured, controls the gas supply line and the measuring unit to increase the pressure of the internal space by supplying gas to the internal space through the gas supply line.

[0014] According to an embodiment, a measuring sensor included in the measuring unit and measuring the particle level can be disposed on the pressure reducing line.

[0015] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes a load-locking chamber having a first internal space, the pressure of the first internal space varying between a first pressure and a second pressure lower than the first pressure; a second chamber connected to the first chamber and having a second internal space, the pressure of the second internal space being maintained at a third pressure; a measuring unit measuring the particle level in the first internal space, the measuring unit further including a measuring channel disposed between the first chamber and the second chamber; and a measuring sensor measuring the particle level of a fluid flowing in the internal space.

[0016] According to an embodiment, the measuring unit may further include a measuring container mounted on the measuring channel and having a sensing space, and the measuring sensor can measure the particle level in the sensing space.

[0017] According to an embodiment, a gas supply line for supplying inert gas to the first internal space and a pressure-reducing line for reducing the pressure in the first internal space can be connected to the first chamber.

[0018] According to an embodiment, the substrate processing apparatus may further include a controller, and when the particle level in the first internal space is to be measured, the controller may control the gas supply line and the measuring unit to increase the pressure of the first internal space by supplying the inert gas into the first internal space through the gas supply line.

[0019] According to an embodiment, the substrate processing apparatus may further include a controller, and when the particle level in the first internal space is to be measured, the controller may control any one of the gas supply line, the pressure reducing line, and the measuring unit, such that the airflow in the first internal space flows in the measuring channel through the pressure difference between the first internal space and the second internal space.

[0020] According to an embodiment, the measuring unit may further include a valve installed in the measuring channel, and the substrate processing apparatus may further include a controller that controls the measuring unit.

[0021] According to an embodiment, when a pressure difference is generated between the first internal space and the second internal space, the controller can control at least one of the gas supply line, the pressure reducing line, and the measuring unit to open the valve.

[0022] According to an embodiment, the valve may include a first valve, which receives a control signal from the controller and is opened and closed; and a second valve, which is opened and closed by manual operation.

[0023] According to an embodiment, a gate valve may be provided between the first chamber and the second chamber, the gate valve selectively connecting the first internal space and the second internal space, and after the pressure in the first internal space increases from the second pressure to the first pressure, the controller may control at least one of the gas supply line, the pressure reducing line and the measuring unit to open the first valve.

[0024] According to the implementation method, the first pressure is the same as the third pressure.

[0025] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes a transposition chamber in which a loading tank for placing a container is installed, and the internal atmosphere of the transposition chamber is maintained at atmospheric pressure; a processing chamber for processing a substrate; a transfer chamber for transferring the substrate to the processing chamber, and the internal atmosphere of the transfer chamber is maintained at vacuum pressure; a load locking chamber disposed between the transfer chamber and the transposition chamber, the internal atmosphere of the load locking chamber varying between atmospheric pressure and vacuum pressure; and a measuring unit for measuring the particle level in the load locking chamber, the measuring unit comprising: a measuring channel, one end of which is connected to the load locking chamber, and the opposite end of which is connected to the transposition chamber; and a measuring sensor for measuring the particle level of a fluid flowing in the measuring channel.

[0026] According to an embodiment, the measuring unit may include a measuring container mounted on the measuring channel and having a sensing space; and a valve mounted on the measuring channel, wherein the measuring sensor can measure the particle level in the sensing space.

[0027] According to an embodiment, a gas supply line for supplying gas to the load lock chamber and a pressure reducing line for reducing the pressure in the load lock chamber can be connected to the load lock chamber.

[0028] According to an embodiment, the substrate processing apparatus may further include a controller that can control the gas supply line such that when the particle level in the load locking chamber is to be measured, the pressure in the load locking chamber is changed to the pressure in the rotation chamber by supplying gas to the space in the load locking chamber through the gas supply line, and the valve can be opened when the pressure in the load locking chamber becomes higher than the pressure in the rotation chamber. Attached Figure Description

[0029] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein, unless otherwise specified, the same reference numerals in the various drawings refer to the same parts, and wherein:

[0030] Figure 1 This is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention;

[0031] Figure 2 The diagram shows the setting. Figure 1 The substrate processing device in the load locking chamber;

[0032] Figure 3 It is shown Figure 2 Cross-sectional view of the supporting shelf;

[0033] Figure 4 The diagram shows Figure 2 The arrangement of the support shelves and the first pad block set on the support shelves;

[0034] Figure 5 The diagram shows Figure 2 The arrangement of the support shelves and the second pad block set on the support shelves;

[0035] Figure 6 The figure shows a substrate being placed in Figure 2 The state of the load-locked chamber;

[0036] Figure 7 The diagram shows the ring component being placed in... Figure 2 The state of the load-locked chamber;

[0037] Figure 8 The diagram shows the setting. Figure 1 The substrate processing device in the load locking chamber;

[0038] Figure 9 Schematic map shows Figure 1 The instrument includes an indexing chamber, a load locking chamber, a transfer chamber, a pressure regulating unit, and a measuring unit.

[0039] Figure 10 It is a schematic map showing Figure 9 Measurement unit;

[0040] Figure 11 This is a flowchart illustrating a particle measurement method according to an embodiment of the present invention;

[0041] Figure 12 The diagram illustrates the state of a substrate processing apparatus that increases the pressure in a load-locking chamber.

[0042] Figure 13 The diagram illustrates the state of a substrate processing apparatus in which fluid flows through a measurement passage by opening a valve;

[0043] Figure 14 The diagram illustrates the state of a substrate processing apparatus that raises the particle level in a load-locking chamber.

[0044] Figure 15 The diagram illustrates the state of particle level measurement in the load-locked chamber terminated by closing the valve;

[0045] Figure 16 The figure illustrates a substrate processing apparatus according to another embodiment of the concept of the present invention;

[0046] Figure 17 The figure illustrates a substrate processing apparatus according to another embodiment of the concept of the present invention;

[0047] Figure 18 The figure illustrates a substrate processing apparatus according to another embodiment of the concept of the present invention;

[0048] Figure 19 The figure illustrates a substrate processing apparatus according to another embodiment of the concept of the present invention; and

[0049] Figure 20 The figure illustrates a substrate processing apparatus according to another embodiment of the concept of the present invention. Detailed Implementation

[0050] In the following, exemplary embodiments of the inventive concept will be described in detail with reference to the accompanying drawings, enabling those skilled in the art to readily implement the inventive concept. However, the inventive concept can be implemented in various different forms and is not limited to the described embodiments. Furthermore, throughout the drawings, the same reference numerals are used for components performing similar functions and operations.

[0051] The expression “comprising” may mean that additional elements may be included rather than excluded, unless there is a specific conflict of description. Specifically, the terms “comprising” and “having” are used to indicate the presence of the features, quantities, steps, operations, elements, parts or combinations thereof described in the specification, and can be understood to mean that one or more other features, quantities, steps, operations, elements, parts or combinations thereof may be added.

[0052] Unless otherwise stated, singular terms may include plural forms. Furthermore, in the accompanying drawings, the shape and size of elements may be exaggerated for clarity.

[0053] Terms such as "first" and "second" can be used to describe various elements, but the elements are not limited to these terms. These terms may be used only for the purpose of distinguishing one element from another. For example, without departing from the scope of the inventive concept, a first element may be named a second element, and similarly, a second element may be named a first element.

[0054] When it is said that one element is "connected to" or "electrically connected to" another element, it should be understood that the first element may be directly connected or electrically connected to the second element, but a third element may be placed between them. On the other hand, when it is said that one element is "directly connected to" or "directly electrically connected to" another element, it should be understood that there is no third element between them. It should be interpreted that other expressions describing the relationship between elements, such as "between," "directly between," "adjacent to," "directly adjacent to," etc., may also serve the same purpose.

[0055] Furthermore, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as those commonly understood by one of ordinary skill in the art to which the inventive concept pertains. Terms as defined in general dictionaries should be interpreted as consistent with their meaning in the context of the relevant art and should not be interpreted as having an ideal or overly formal meaning, unless expressly defined in the specification of this disclosure.

[0056] In the following text, reference will be made to Figures 1 to 17 Description of embodiments of the present invention.

[0057] Figure 1 This is a schematic plan view illustrating a substrate processing apparatus according to an embodiment of the present invention. (Reference) Figure 1 According to an embodiment of the present invention, the substrate processing apparatus 1000 may include a transposition unit 100, a process execution unit, and a controller 400. When viewed from above, the transposition unit 100 and the process execution unit may be arranged along a first direction "X". Hereinafter, the direction perpendicular to the first direction "X" when viewed from above is defined as the second direction "Y". Furthermore, the direction perpendicular to the first direction "X" and the second direction "Y" is defined as the third direction "Z". Here, the third direction "Z" may refer to a direction perpendicular to the ground.

[0058] The indexing unit 100 may include a loading tank 110, an indexing chamber 130, a first transfer robot 150, and a side buffer 170.

[0059] Container "C" can be placed in loading tank 110. A portion of container "C" placed in loading tank 110 can receive substrate "W" (e.g., wafer), which is transferred to process execution unit 300. Furthermore, another portion of container "C" placed in loading tank 110 can receive ring member FR and / or wafer-type sensor, which is transferred to process execution unit 300. The wafer-type sensor can be a base capable of monitoring substrate processing performed in processing chamber 370, as will be described below. Additionally, another portion of container "C" placed in loading tank 110 can receive a carrier for transporting ring member FR. Container "C" can be transferred to loading tank 110 for loading or unloading from loading tank 110 by a container transfer device, and can be transported. The container transfer device can be an overhead transport device (hereinafter, OHT), but the inventive concept is not limited thereto, and container "C" can be transported by various means of transporting container "C". In addition, the operator can directly load container "C" into loading tank 110 or unload container "C" placed in loading tank 110 from loading tank 110.

[0060] A sorting chamber 130 can be provided between the loading tank 110 and the process execution unit 300. The sorting chamber 130 can be kept in an atmospheric atmosphere. A side buffer 170 can be installed on one side of the sorting chamber 130 as a holding position. In addition, an alignment unit can be provided at a portion of the side buffer 170 to align the substrate "W", the ring member FR and / or the wafer-type sensor.

[0061] In addition, a first transfer robot 150 may be provided in the transfer chamber 130. The first transfer robot 150 may transfer substrates “W”, ring members FR and / or wafer-type sensors disposed in the loading tank 110, the load locking chamber 310 (described below) and the side buffer 170.

[0062] The process execution unit 300 may include a load locking chamber 310, a transfer chamber 330, a second transfer robot 350, and a processing chamber 370.

[0063] A load locking chamber 310 can be disposed between a transfer chamber 330 and a transposition chamber 130. The internal atmosphere of the load locking chamber 310 can be switched between atmospheric atmosphere and vacuum pressure atmosphere. As described above, because the internal atmosphere of the transfer chamber 330 is maintained in a vacuum pressure atmosphere, the atmosphere of the load locking chamber 310 can be switched between atmospheric atmosphere and vacuum atmosphere to transfer the substrate "W", ring member FR, and / or wafer-type sensor between the transfer chamber 330 and the transposition chamber 130.

[0064] A gate valve 200 can be installed between the load locking chamber 310 and the indexing chamber 130, or between the load locking chamber 310 and the transfer chamber 330 (which will be described below). For example, a first gate valve 210 can be provided between the load locking chamber 310 and the indexing chamber 130. The first gate valve 210 can selectively connect the spaces in the load locking chamber 310 and the spaces in the indexing chamber 130. Furthermore, a second gate valve 230 can be provided between the load locking chamber 310 and the transfer chamber 330. The second gate valve 210 can selectively connect the spaces in the load locking chamber 310 and the spaces in the transfer chamber 330.

[0065] A transfer chamber 330 can be disposed between the load locking chamber 310 and the processing chamber 370. The internal atmosphere of the transfer chamber 330 can be maintained in a vacuum pressure atmosphere. Furthermore, a second transfer robot 350 can be disposed within the transfer chamber 330. The second transfer robot 350 can transfer at least one of the substrate "W", the ring member FR, and the wafer-type sensor between the load locking chamber 310 and the processing chamber 370.

[0066] At least one processing chamber 370 may be connected to the transfer chamber 330. The processing chamber 370 may be a chamber for performing processes on the substrate "W". The processing chamber 370 may be a liquid processing chamber for processing the substrate "W" by supplying a processing liquid to the substrate "W". Furthermore, the processing chamber 370 may be a plasma chamber for processing the substrate "W" using plasma. Additionally, some processing chambers 370 may be liquid processing chambers for processing the substrate "W" by supplying a processing liquid to the substrate "W", and some processing chambers 370 may be plasma chambers for processing the substrate "W" using plasma. However, the inventive concept is not limited thereto, and the substrate processing process performed in the processing chamber 370 may be modified differently to known substrate processing processes. Furthermore, when the processing chamber 370 is a plasma chamber for processing the substrate "W" using plasma, the plasma chamber may be a chamber for performing an etching or ashing process by removing a thin film from the substrate "W" using plasma. However, the inventive concept is not limited thereto, and the plasma processing process performed in the processing chamber 370 may be modified differently to known plasma processing processes.

[0067] Furthermore, as an example, Figure 1 The diagram shows the transfer chamber 330 having a generally hexagonal shape when viewed from above, and provides four processing chambers 370 connected to the transfer chamber 330; however, the inventive concept is not limited thereto. For example, the shape of the transfer chamber 330 and the number of processing chambers 370 can be modified in various ways according to the user's needs and the number of substrates "W" to be processed.

[0068] The controller 400 can control the substrate processing apparatus 1000. The controller 400 can control the substrate processing apparatus 1000 so that the substrate processing apparatus 1000 performs processing on the substrate "W". For example, the controller can control the substrate processing apparatus 1000 to transport the substrate "W" out of the container "C" that receives the substrate "W" to be processed, and to transfer the transported substrate "W" to the processing chamber 370.

[0069] Furthermore, when a specific number of substrates "W" are processed in the processing chamber 370, or when the shape deformation of the ring member FR disposed in the processing chamber 370 deviates from the allowable range, the controller 400 can operate the substrate processing apparatus 1000 to replace the ring member FR disposed in the processing chamber 370. For example, the controller 400 can control the second transfer robot 350 to transport the used ring member FR out of the processing chamber 370. For example, the controller 400 can control the second transfer robot 350 to transfer the used ring member FR transported from the processing chamber 370 to the load locking chamber 310. In addition, the controller 400 can control the first transfer robot 150 to transport the used ring member FR transported to the load locking chamber 310 out.

[0070] Furthermore, the controller 400 can control the first transfer robot 150 to transfer the used ring component FR from the load locking chamber 310 to the container "C". Additionally, the controller 400 can control the first transfer robot 150 to remove unused ring components FR from the container "C". Furthermore, the controller 400 can control the first transfer robot 150 to transfer unused ring components FR to the load locking chamber 310. Furthermore, the controller 400 can control the second transfer robot 350 to transfer unused ring components FR from the load locking chamber 310 to the processing chamber 370.

[0071] Furthermore, the controller 400 may include a process controller, which includes a microprocessor (computer) for controlling the substrate processing apparatus 100, a keyboard for inputting commands to allow an operator to manage the substrate processing apparatus 1000, a display for visualizing and showing the operation of the substrate processing apparatus 1000, and a storage unit for storing control programs for executing process processes performed by the substrate processing apparatus 1000 under the control of the process controller, or programs for executing process processes (i.e., process processing schemes in components based on various data and process processing conditions). Additionally, the user interface and the storage unit may be connected to the process controller. The process processing scheme may be stored in a storage medium in the storage unit, which may be a hard disk, a removable disk such as a CD-ROM or DVD, or a semiconductor memory such as flash memory.

[0072] The load locking chamber 310 according to an embodiment of the present invention will be described in detail below.

[0073] Figure 2 The diagram shows the setting. Figure 1 The substrate processing apparatus in the load-locking chamber. Specifically, Figure 2 It is shown Figure 1 Floor plan of the load-locking chamber. (Reference) Figure 2 According to an embodiment of the present invention, the load locking chamber 310 may include a housing 311 and a support shelf 320.

[0074] The housing 311 may have a first internal space 312. The housing 311 may have a first internal space 312 in which the substrate "W" or ring member FR is disposed. The housing 311 may be disposed between the indexing chamber 130 and the transfer chamber 330 already described above. Furthermore, the housing 311 may have openings. Multiple openings may be provided in the housing 311. For example, any one opening may be selectively connected to the indexing chamber 130 via a gate valve (not shown). Additionally, another opening may be selectively connected to the transfer chamber 330 via a gate valve (not shown).

[0075] Furthermore, the housing 311 may have a vent 313 through which ventilation gas is supplied to the first internal space 312. The ventilation gas may be an inert gas. For example, the ventilation gas may include gases such as nitrogen and argon. However, the inventive concept is not limited to this, and the ventilation gas may be any known inert gas. The vent 313 may be connected to the gas supply line 610 of the pressure regulating unit 600.

[0076] Furthermore, the housing 311 may have a pressure relief port 313, which reduces the pressure in the internal space 312 of the housing 311. For example, the pressure relief port 314 can discharge airflow from the first internal space 312 of the housing 311 to the outside. The pressure relief port 314 may be connected to the pressure relief line 630 of the pressure regulating unit 600 (which will be described below).

[0077] A support shelf 320 may be disposed within the first internal space 312. The support shelf 320 may support the substrate "W" or the ring member FR within the first internal space 312. For example, the substrate "W" may be a wafer with a disk shape. Furthermore, the ring member FR may be a process kit disposed within the processing chamber 370. For example, the ring member FR may be an ISO ring or a focusing ring. Additionally, the diameter of the ring member FR may be larger than the diameter of the substrate "W".

[0078] At least one support shelf 320 may be provided. For example, multiple support shelves 320 may be provided. When viewed from above, the support shelves 320 may be spaced apart from each other. When viewed from above, the support shelves 320 may be spaced apart from each other along the circumference of an imaginary circle. For example, three support shelves 320 may be provided. When viewed from above, the three support shelves 320 may be spaced apart from each other along the circumference of an imaginary circle.

[0079] Figure 3 yes Figure 2 Cross-sectional view of the support shelf. Figure 3 The support shelf 320 shown is Figure 2 Any one of the support shelves 320, the structure of the other support shelves 320 is the same as Figure 3 The structure of the support shelf 320 shown is the same as or similar to that of the support shelf shown. (Reference) Figure 3 The support shelf 320 may include a first shelf 321 and a second shelf 322. The first shelf 321 and the second shelf 322 may have different heights. For example, the second shelf 322 may be positioned above the first shelf 321. That is, the height of the second shelf 322 may be greater than the height of the first shelf 321. When viewed in cross-section, the first shelf 321 and the second shelf 322 may have an approximately inverted "L" shape.

[0080] Furthermore, the support shelf 320 may include a first pad 324 and a second pad 326. The first pad 324 and the second pad 326 may be mounted on the upper surface of at least one of the first shelf 321 and the second shelf 322. For example, the first pad 324 and the second pad 326 may be mounted on the upper surface of the second shelf 322.

[0081] The first pad 324 and the second pad 326 can be formed of a material that has anti-friction properties against the substrate "W" or the ring member FR. For example, the first pad 324 and the second pad 326 can be formed of carbon-filled polyetheretherketone (PEEK). However, the embodiment in which carbon-filled PEEK is used as the material of the first pad 324 and the second pad 326 is merely an example, and various modifications can be made using other known materials with similar properties.

[0082] Figure 4 The diagram shows Figure 2 The arrangement of the support shelves, and the first pad block set on the support shelves. (Reference) Figure 4 When viewed from above, the first pad 324 can have a substantially arcuate shape. Furthermore, when viewed from above, the first pad 324 mounted in the support shelf 320 can be mounted to overlap with an imaginary first circle R1. That is, the center point of the arcuate first pad 324 and the center point of the imaginary first circle R1 can be the same first center CR1.

[0083] Figure 5 The diagram shows Figure 2 The arrangement of the support shelves, and the second pad block set on the support shelves. (See reference) Figure 5 When viewed from above, the second pad 326 can have a substantially arcuate shape. Furthermore, when viewed from above, the second pad 326 mounted in the support shelf 320 can be mounted to overlap with an imaginary second circle R2. That is, the center point of the arcuate second pad 326 and the center point of the imaginary second circle R2 can be the same second center CR2. Furthermore, the second center CR2 can coincide with the aforementioned first center CR1. Additionally, the diameter of the second circle R2 can be larger than the diameter of the first circle R1.

[0084] Figure 6 The figure shows a substrate being placed in Figure 2 The state of the load lock chamber. Figure 7 The diagram shows the ring component being placed in... Figure 2 The state of the load-locked chamber. (Reference) Figure 6 and Figure 7 In the load locking chamber 310 according to an embodiment of the present invention, the substrate "W" or the ring member FR can be supported in a first internal space 312 because each support frame 320 has a first pad 324 and a second pad 326. Furthermore, because the first pad 324 is mounted to overlap with an imaginary first circle R1 and the second pad 326 is mounted to overlap with an imaginary second circle R2, and the first center CR1 of the first circle R1 and the second center CR2 of the second circle R2 overlap each other, the centers of the ring member FR and the substrate "W" supported by the load locking chamber 310 can coincide when viewed from above. Therefore, the robot calibration techniques used for the first transfer robot 150 and the second transfer robot 350 can be applied to the substrate "W" and the ring member FR in the same manner. Therefore, the number of calibrations performed on the first transfer robot 150 and the second transfer robot 350 can be reduced by half, thus minimizing the time period for calibration. Furthermore, the calibration accuracy of the substrate "W" and the ring member FR can be further improved. Because the calibration of the substrate "W" and the ring member FR is common, calibration can be performed more precisely.

[0085] Furthermore, as described above, the first pad 324 and / or the second pad can have a substantially arcuate shape. This increases the contact area of ​​the substrate "W" or the ring member FR compared to the case where the first pad 324 and / or the second pad 326 simply have a linear shape and thus allow the substrate "W" to slide or may minimize the ring member FR.

[0086] Figure 8 The diagram shows the setting. Figure 1The substrate processing apparatus in the load-locking chamber. (Reference) Figure 8 The substrate processing apparatus 500, which is installed in the processing chamber 370, will be described in detail below. The substrate processing apparatus 500 can process the substrate "W" by transmitting plasma to the substrate "W".

[0087] The substrate processing apparatus 500 may include a processing chamber 510, a gate valve 520, an exhaust line 530, a power supply unit 540, a support unit 550, a ring lifting module 560, a substrate lifting module 570, a baffle 580, and a gas supply unit 590.

[0088] Processing chamber 510 may have processing space 511. Processing chamber 510 may be grounded. Processing chamber 510 may provide processing space 511 in which substrate "W" is processed. When processing substrate "W", the processing space 511 of processing chamber 510 may be maintained substantially in a vacuum atmosphere. An inlet 512 may be formed on one side of processing chamber 510, through which substrate "W" or ring member FR is conveyed in and out. Gate valve 520 may selectively open and close inlet 512.

[0089] An exhaust port 514 can be formed on the bottom surface of the processing chamber 510. An exhaust line 514 can be connected to the exhaust port 124. The exhaust line 530 can discharge process gases, process byproducts, etc., supplied to the processing space 511 of the processing chamber 510 to the outside of the processing chamber 510 through the exhaust port 514. Furthermore, an exhaust plate 532 can be provided above the exhaust port 514 to allow for more uniform venting of the processing space. When viewed from above, the exhaust plate 532 can be substantially annular in shape. Additionally, at least one exhaust port can be formed in the exhaust plate 532. The operator can select an exhaust plate 532 from a plurality of exhaust plates 532 having various shapes and sizes that can uniformly vent the processing space and install the exhaust plate 532 above the exhaust port 514.

[0090] In addition, the processing chamber 510 may also include a support member 516. The support member 516 may support at least a portion of the base included in the support unit 550 (which will be described below). For example, the support member 516 may be configured to support the lower portion of the insulating plate 554 included in the support unit 550.

[0091] Power supply unit 540 can generate RF power that excites the process gas supplied by gas supply unit 590 (which will be described below) into a plasma state. Power supply unit 540 may include power supply 542 and matching unit 544. Power supply 542 and matching unit 544 may be mounted on a power transmission line. Furthermore, the power transmission line may be connected to chuck 552.

[0092] The support unit 550 can support the substrate "W" in the processing space 510 of the processing chamber 510. The support unit 550 may include a chuck 552, an insulating plate 554, a quartz ring 556, and a sealing member 558.

[0093] The chuck 552 may have a support surface for supporting the substrate "W". The chuck 552 can support the substrate "W" and hold the supported substrate "W". For example, an electrostatic plate (not shown) may be provided in the chuck 552, and the chuck 552 may be an electrostatic chuck that holds the substrate "W" using electrostatic force. For example, the chuck 552 may be an electrostatic chuck (ESC). However, the inventive concept is not limited thereto; the chuck 552 may also hold the substrate "W" using a vacuum suction method.

[0094] When viewed from above, the insulating plate 554 may have a circular shape. The aforementioned chuck 552 and the quartz ring 556, which will be described below, may be positioned on the insulating plate 554. The insulating plate 554 may be a dielectric material. For example, the insulating plate 554 may be formed of a material including ceramic.

[0095] The quartz ring 556 may be formed of a material including quartz. When viewed from above, the quartz ring 556 may have a substantially annular shape. When viewed from above, the quartz ring 556 may have a substantially surrounding shape around the chuck 552. When viewed from above, the quartz ring 556 may have a surrounding shape around a substrate “W” supported by the chuck 552.

[0096] Furthermore, the quartz ring 556 can have a stepped shape, such that the height of its inner upper surface and the height of its outer upper surface can be different. For example, the height of the inner upper surface of the quartz ring 556 can be lower than the height of its outer upper surface. Additionally, a ring member FR (e.g., a focusing ring) can be positioned on the inner upper surface of the quartz ring 556.

[0097] A sealing member 558 may be disposed between the insulating plate 554 and the chuck 552 to prevent the generation of an electric arc in the gap formed between the pin holes of the insulating plate 554 and the chuck 552, as will be described below.

[0098] The ring lifting module 560 can raise the ring member FR located on the upper surface inside the quartz ring 556. The ring lifting module 560 may include a ring lifting pin 562 and a ring lifting pin lifting component 564. The ring lifting pin 562 can move upward and downward along a pin hole formed in the insulating plate 554 and / or the quartz ring 556. Furthermore, the ring lifting pin 562 can be moved upward and downward by the ring lifting pin lifting component 564. The ring lifting pin lifting component 564 may be a pneumatic or hydraulic cylinder or motor.

[0099] The substrate lifting module 570 can lift and lower the substrate "W" positioned on the chuck 552. The substrate lifting module 570 may include a substrate lifting pin 572, a substrate lifting pin lifting component 574, a lifting pin 576, and a bellows 578. The substrate lifting pin 572 can move up and down along pin holes formed in the insulating plate 554 and / or the chuck 552. The substrate lifting pin 572 can be connected to a lifting plate 576 that receives power from the substrate lifting pin lifting component 574, and can move up and down by lifting the lifting plate 576. Furthermore, the bellows 578, which maintains airtightness, can be installed at the connection between the lifting plate 576 and the substrate lifting pin 572.

[0100] A baffle 580 may be disposed on the upper part of the support unit 550. The baffle 580 may be formed of an electrode material. At least one baffle hole 582 may be formed in the baffle 580. For example, multiple baffle holes 582 may be formed, and they may be uniformly formed over the entire area of ​​the baffle 580 when viewed from above. The baffle 580 enables the process gas supplied by the gas supply unit 590 (which will be described below) to be uniformly delivered to the substrate "W".

[0101] The gas supply unit 590 supplies process gas to the processing space of the processing chamber 510. The process gas may be a gas excited into a plasma state by a power supply unit 540 (described below). The gas supply unit 590 may include a gas supply source 592 and a gas supply line 594. One end of the gas supply line 594 may be connected to the gas supply source 592, and the other end of the gas supply line 594 may be connected to the upper part of the processing chamber 510. Therefore, the process gas delivered by the gas supply source 592 can be supplied to the upper region of the baffle 580 through the gas supply line 594. The process gas supplied to the upper region of the baffle 580 can be introduced into the processing space of the processing chamber 510 through the baffle hole 582.

[0102] Figure 9 Schematic map shows Figure 1 The instrument includes an indexing chamber, a load locking chamber, a transfer chamber, a pressure regulating unit, and a measuring unit. (Reference) Figure 9The substrate processing apparatus 1000 according to an embodiment of the present invention may include a load locking chamber 310 (an example of a first chamber), a transposition chamber 130 (an example of a second chamber), and a transfer chamber 330 (an example of a third chamber), as described above. Furthermore, the load locking chamber 310 may have a first internal space 312, the transposition chamber 130 may have a second internal space 132, and the transfer chamber 330 may have a third internal space 332. A first transfer robot 150 may be disposed in the second internal space 132. Furthermore, the pressure in the second internal space 132 may be maintained at a third pressure. For example, the third pressure may be atmospheric pressure. A second transfer robot 350 may be disposed in the third internal space 332.

[0103] A first gate valve 210, selectively connecting the first internal space 312 and the second internal space 132, may be disposed between the load locking chamber 310 and the rotation chamber 130. A second gate valve 230, selectively connecting the first internal space 312 and the third internal space 332, may be disposed between the load locking chamber 310 and the transfer chamber 330.

[0104] The substrate processing apparatus according to an embodiment of the present invention may include a pressure regulating unit 600. The pressure regulating unit 600 can regulate the pressure in the first internal space 312 of the load locking chamber 310. The pressure regulating unit 600 may include a gas supply line 610 and a pressure reducing line 630.

[0105] One end of the gas supply line 610 can be connected to a vent 313. A gas supply valve 614 can be installed in the gas supply line 610. Furthermore, the gas supply line 610 can receive inert gas from a gas supply source 612 and supply the gas to the first internal space 312. When the gas supply line 610 supplies gas to the first internal space 312, the pressure in the first internal space 312 can increase.

[0106] Furthermore, one end of the pressure-reducing line 630 can be connected to the aforementioned pressure-reducing port 314. A pressure-reducing valve 634 can be installed in the pressure-reducing line 630. Additionally, the pressure-reducing line 630 can receive pressure reduction from the pressure-reducing component 632, such as a pump, and can discharge airflow from the first internal space 312. When the pressure-reducing line 630 discharges airflow from the first internal space 312, the pressure in the first internal space 312 can be reduced.

[0107] The controller 400 described above can control the pressure regulating unit 600 to change the pressure of the first internal space 312 between a first pressure (e.g., atmospheric pressure) and a second pressure lower than the first pressure (e.g., vacuum pressure). Therefore, the atmosphere in the first internal space 312 can be switched between an atmospheric pressure atmosphere and a vacuum pressure atmosphere.

[0108] The measuring unit 700 measures the particle level in the first internal space 312 of the load-locking chamber 310. The measuring unit 700 may be located and mounted outside the load-locking chamber 310. The measuring unit 700 delivers the measured particle level value to the controller 400. The measuring unit 700 may include a measuring channel 710, a measuring container 730, a measuring sensor 740, and a valve 750.

[0109] The measuring channel 710 can be a channel through which fluid can flow. For example, the measuring channel 710 can be a channel through which airflow in the first internal space 312 can flow. The measuring channel 710 can be disposed between the load locking chamber 310 and the indexing chamber 130. One end of the measuring channel 710 can be connected to the load locking chamber 310, and the opposite end of the measuring channel 710 can be connected to the indexing chamber 130. Therefore, airflow in the first internal space 312 can be introduced from the first internal space 312 into the second internal space 132 through the measuring channel 710.

[0110] In addition, if Figure 10 As shown, the measuring container 730 can be mounted on the measuring channel 710. The measuring container 730 may have a sensing space 732, in which a measuring sensor 740 is disposed. The measuring sensor 740 can measure the level of particles included in the airflow in the first internal space 312 within the sensing space 732. For example, the measuring sensor 740 can measure the level of particles included in the airflow introduced into the sensing space 732 in the first internal space 312.

[0111] Refer again Figure 9 Valve 750 can be installed on the measuring channel 710. Valve 750 can be an on / off valve. Valve 750 can selectively open and close. For example, valve 750 can receive a control signal from controller 400 and can selectively open and close. Alternatively, valve 750 can be selectively opened and closed by manual operation of an operator. Valve 750 can selectively open and close, allowing fluid to selectively flow through the measuring channel 710.

[0112] The method for measuring particles according to an embodiment of the present invention will be described in detail below. The method for measuring particles described below may be a method for measuring the level of particles residing in the first internal space 312 of the load locking chamber 310. Furthermore, in order to perform the method for measuring particles described below, the controller 400 may control the substrate processing apparatus 1000. For example, the controller 400 may control the pressure regulating unit 600 and the measuring unit 700.

[0113] Figure 11 This is a flowchart illustrating a particle measurement method according to an embodiment of the present invention.

[0114] When it is necessary to measure the particle level residing in the internal space 312 of the load-locking chamber 310, in the first operation (S10), the gas supply line 610 of the pressure regulating unit 600 supplies gas to the first internal space 312 (see...). Figure 12 Then, the gas supply valve 614 can be opened, the pressure reducing valve 634 can be closed, and the valve 750 can be closed. As gas is supplied to the first internal space 312, the pressure in the first internal space 312 increases. For example, in the first operation (S10), the pressure in the first internal space 312 can be increased to a preset pressure. The preset pressure can be a pressure higher than that in the second internal space 132.

[0115] In the second operation (S20), valve 750 can be opened (see...). Figure 13 The second operation (S20) can be performed after the pressure in the first internal space 312 reaches a preset pressure. When the valve 750 is opened after the pressure in the first internal space 312 reaches the preset pressure, fluid can flow through the measuring channel 710 due to the pressure difference between the first internal space 312 and the second internal space 132. Then, for example, the fluid flowing through the measuring channel 710 can be the airflow in the first internal space 312. Furthermore, the airflow in the first internal space 312 flowing in the measuring channel 710 can be introduced into the second internal space 132. In addition, in the second operation (S20), the gas supply valve 614 can be shut off, the pressure reducing valve 634 can be shut off, and the valve 750 can be opened.

[0116] In the third operation (S30), the measuring sensor 740 can measure the level of particles included in the airflow in the first internal space 312. For example, airflow flowing in the measuring channel 710 can be introduced into the sensing space 732 of the measuring container 730. The measuring sensor 740 can measure the level of particles included in the airflow introduced into the sensing space 732 in the first internal space 312, and can deliver the measured data to the controller 400 (see...). Figure 14 ).

[0117] When the measuring sensor 740 completes the particle measurement, in the fourth operation (S40), the valve 750 can be closed to prevent airflow in the first internal space 312 from flowing in the measuring channel 710 (see...). Figure 15 ).

[0118] The processed substrate "W" and the unprocessed substrate "W" are repeatedly transported into the load-locking chamber 310. Therefore, there is a risk that flue gas may adhere to the processed substrate "W", causing contamination of the first internal space 312 of the load-locking chamber 310. Therefore, it is necessary to periodically measure the particle level in the first internal space 312.

[0119] Therefore, measures are taken to arrange a sensor capable of measuring the particle level in the load-locking chamber 310, but this sensor can occupy a large space in the first internal space 312. Therefore, the measurement unit 700 of the substrate processing apparatus 1000 according to an embodiment of the present invention is located and mounted outside the load-locking chamber 310. Therefore, the problem that orifices can be formed in the internal space 312 because the sensor is mounted in the load-locking chamber 310 and a large space in the first internal space 312 is occupied, allowing impurities such as particles to be introduced into the orifices, can be solved. Furthermore, according to an embodiment of the present invention, the airflow in the first internal space 312 can flow along the measurement channel 710 and can be introduced into the sensing space 732 of the measurement container 730. The volume of the sensing space 732 can be smaller than the volume of the first internal space 312. Therefore, the airflow introduced into the sensing space 732 of the first internal space 312 can be relatively concentrated, thus further increasing the accuracy of the particle level measured by the measurement sensor 740.

[0120] Figure 16 The figure illustrates a substrate processing apparatus according to another embodiment of the concept of the present invention. (Reference) Figure 16 Valve 750 may include a first valve 750a and a second valve 750b. The first valve 750a and the second valve 750b may be connected in series with each other on the measuring channel 710. Valve 750a may receive a control signal from controller 400 and may be opened and closed. The first valve 750a may be a balancing valve.

[0121] Preferably, when the first gate valve 210 connects the first internal space 312 and the second internal space 132, the pressures in the first internal space 312 and the second internal space 132 can be the same. For example, the gas supply line 610 can increase the pressure in the first internal space 312 from a second pressure (e.g., vacuum pressure) to a first pressure (e.g., atmospheric pressure) by supplying gas to the first internal space 312 before the first gate valve 210 connects the first internal space 312 and the second internal space 132. Furthermore, the pressure in the second internal space 132 can be maintained at a third pressure. The third pressure can be the same as the first pressure, atmospheric pressure. Then, there can be a slight difference between the third pressure and the second internal space 132, and the first internal space 312 and the second internal space 132 can be pre-connected when the first valve 750a is opened. Therefore, the flow of air that may occur when the first gate valve 210 connects the first internal space 312 and the second internal space 132 can be minimized.

[0122] Furthermore, the second valve 750b can be a manual valve, which can be opened and closed by manual operation of the operator. The second valve 750b can be selectively opened and closed by manual operation of the operator if necessary, when the operator does not wish to measure particles while maintaining the indexing chamber 130 or to prevent airflow from the first internal space 312 from being introduced into the second internal space 132.

[0123] Although the example above describes the first valve 750a and the second valve 750b being connected in series, the inventive concept is not limited thereto. For example, as Figure 17 As shown, the first valve 750a and the second valve 750b can be connected in parallel. In this case, the functions described above, achieved by opening / closing the first valve 750a and the second valve 750b, can be separated.

[0124] Although the measurement container 730 and the measurement sensor 740 have been described in the above examples as being arranged on the measurement channel 710, the inventive concept is not limited thereto. For example, as Figure 17 As shown, the measuring container 730 and the measuring sensor 740 can be mounted on the pressure reducing line 630.

[0125] Although the example above describes the opposite end of the measuring channel 710 being connected to the indexing chamber 130, the inventive concept is not limited thereto. For example, as Figure 19 As shown, the opposite end of the measuring channel 710 can be connected to the pressure reducing line 630. In contrast, reference... Figure 20 The opposite end of the measuring channel 710 can be connected to a displacement exhaust line 133 for the second internal space 132 of the displacement chamber 130. In other embodiments of the present invention, particles in the load locking chamber 310 can be prevented from being introduced into the second internal space 132 of the displacement chamber 130.

[0126] According to an embodiment of the present invention, the particle level in a chamber (with changes in internal spatial pressure) can be measured.

[0127] Furthermore, according to the embodiments conceived in this invention, the particle level in the load-locking chamber can be measured periodically.

[0128] Furthermore, according to embodiments conceived in this invention, the measurement accuracy of particle levels residing within the chamber can be further improved.

[0129] The effects of this invention are not limited to those described above. Those skilled in the art can clearly understand the effects not mentioned from the specification and drawings.

[0130] Furthermore, the foregoing description outlines exemplary embodiments of the inventive concept, and the inventive concept can be used in various other combinations, modifications, and environments. That is, the inventive concept can be modified and altered without departing from the scope of the inventive concept disclosed in the specification, the equivalent scope of the written disclosure, and / or the technical or knowledge scope of those skilled in the art. The written embodiments describe the optimal state for realizing the technical spirit of the inventive concept, and various changes can be made as needed in specific fields of application and for specific purposes. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept to the disclosed embodiments. Furthermore, it should be construed that the appended claims include other embodiments.

Claims

1. A substrate processing apparatus, comprising: A load-locking chamber, wherein the pressure inside the load-locking chamber varies between a first pressure and a second pressure lower than the first pressure; A rotation chamber, which is connected to the load locking chamber; A measuring unit configured to measure the particle level in the interior space. The measuring unit is located outside the load locking chamber; The measuring unit includes: a measuring channel disposed between the load locking chamber and the rotation chamber, wherein airflow in the interior space of the load locking chamber can be introduced from the interior space of the load locking chamber into the interior space of the rotation chamber through the measuring channel; and A measuring sensor, mounted on the measuring channel and configured to measure the particle level in the interior space; and A measuring container, which is mounted on the measuring channel and has a sensing space, and The measuring sensor measures the particle level in the sensing space; The substrate processing apparatus further includes: A pressure regulating unit is provided, which can increase the pressure in the internal space of the load locking chamber. When the pressure in the internal space of the load locking chamber is higher than the pressure in the internal space of the rotation chamber, due to the pressure difference, fluid in the internal space of the load locking chamber flows through the measuring channel and is introduced into the sensing space of the measuring container. The measuring sensor measures the level of particles included in the airflow introduced into the sensing space, and the airflow is introduced into the internal space of the rotation chamber.

2. The substrate processing apparatus of claim 1, wherein a gas supply line configured to supply gas to the internal space and a pressure reducing line configured to reduce the pressure of the internal space are connected to the load locking chamber.

3. The substrate processing apparatus according to claim 2, further comprising: Controller When measuring the particle level in the interior space, the controller controls the gas supply line and the measuring unit to increase the pressure in the interior space by supplying gas to the interior space through the gas supply line.

4. A substrate processing apparatus, comprising: A first chamber having a first internal space, wherein the pressure in the first internal space varies between a first pressure and a second pressure lower than the first pressure; A second chamber, which is connected to the first chamber and has a second internal space, wherein the pressure in the second internal space is maintained at a third pressure; and A measurement unit configured to measure the particle level in the first interior space. The measuring unit further includes: A measurement channel is provided between the first chamber and the second chamber, and airflow in the first internal space can be introduced from the first internal space to the second internal space through the measurement channel; A measuring sensor, configured to measure the particle level of a fluid flowing in the interior space; and A measuring container, which is mounted on the measuring channel and has a sensing space, and The measuring sensor measures the particle level in the sensing space; The substrate processing apparatus further includes: A pressure regulating unit is provided, which is capable of increasing the pressure in the first internal space. When the pressure in the first internal space is higher than the pressure in the second internal space, due to the pressure difference, fluid in the first internal space flows through the measuring channel and is introduced into the sensing space of the measuring container. The measuring sensor measures the level of particles included in the airflow introduced into the sensing space, and the airflow is introduced into the second internal space.

5. The substrate processing apparatus of claim 4, wherein a gas supply line configured to supply inert gas to the first internal space and a pressure reducing line configured to reduce the pressure of the first internal space are connected to the first chamber.

6. The substrate processing apparatus according to claim 5, further comprising: Controller When measuring the particle level in the first interior space, the controller controls the gas supply line and the measuring unit to increase the pressure in the first interior space by supplying the inert gas into the first interior space through the gas supply line.

7. The substrate processing apparatus according to claim 5, further comprising: Controller When measuring the particle level in the first internal space, the controller controls any one of the gas supply line, the pressure reducing line, and the measuring unit, causing the airflow in the first internal space to flow in the measuring channel through the pressure difference between the first internal space and the second internal space.

8. The substrate processing apparatus according to claim 5, wherein the measuring unit further comprises: A valve, the valve being installed in the measuring channel, and The substrate processing apparatus further includes: A controller for controlling the measuring unit.

9. The substrate processing apparatus of claim 8, wherein after a pressure difference is generated between the first internal space and the second internal space, the controller controls at least one of the gas supply line, the pressure reducing line and the measuring unit to open the valve.

10. The substrate processing apparatus according to claim 8, wherein the valve comprises: A first valve, configured to receive a control signal from the controller and configured to open and close; and The second valve is configured to be opened and closed by manual operation.

11. The substrate processing apparatus of claim 10, wherein a gate valve is provided between the first chamber and the second chamber, the gate valve being configured to selectively connect the first internal space and the second internal space, and After the pressure in the first internal space increases from the second pressure to the first pressure, the controller controls at least one of the gas supply line, the pressure reducing line, and the measuring unit to open the first valve.

12. The substrate processing apparatus according to any one of claims 4 to 11, wherein the first pressure is the same as the third pressure.

13. A substrate processing apparatus, comprising: A transposition chamber, in which a loading tank for placing containers is installed, and the internal atmosphere of the transposition chamber is maintained at atmospheric pressure; Processing chamber, the processing chamber being configured as a processing substrate; A transfer chamber configured to transfer the substrate to the processing chamber, wherein the internal atmosphere of the transfer chamber is maintained in a vacuum pressure atmosphere; A load locking chamber is disposed between the transfer chamber and the indexing chamber, and the internal atmosphere of the load locking chamber varies between atmospheric pressure and vacuum pressure. and A measuring unit configured to measure the particle level in the load-locking chamber. The measuring unit includes: A measurement channel, one end of which is connected to the load locking chamber and the opposite end of which is connected to the rotation chamber, and airflow in the interior space of the load locking chamber can be introduced from the interior space of the load locking chamber into the interior space of the rotation chamber through the measurement channel; A measuring sensor, configured to measure the particle level of a fluid flowing in the measuring channel; and A measuring container, the measuring container being mounted on the measuring channel and having a sensing space; and A valve, the valve being installed on the measuring channel, and The measuring sensor measures the particle level in the sensing space; The substrate processing apparatus further includes: A pressure regulating unit is provided, which can increase the pressure in the internal space of the load locking chamber. When the pressure in the internal space of the load locking chamber is higher than the pressure in the internal space of the rotation chamber, due to the pressure difference, fluid in the internal space of the load locking chamber flows through the measuring channel and is introduced into the sensing space of the measuring container. The measuring sensor measures the level of particles included in the airflow introduced into the sensing space, and the airflow is introduced into the internal space of the rotation chamber.

14. The substrate processing apparatus of claim 13, wherein a gas supply line configured to supply gas to the load locking chamber and a pressure reducing line configured to reduce the pressure of the load locking chamber are connected to the load locking chamber.

15. The substrate processing apparatus according to claim 14, further comprising: Controller The controller controls the gas supply line such that when the particle level in the load-locking chamber is to be measured, the pressure in the load-locking chamber is converted into the pressure in the rotation chamber by supplying gas to the space within the load-locking chamber through the gas supply line. The valve is opened when the pressure in the load locking chamber becomes higher than the pressure in the indexing chamber.

Images