Polyimide positive photoresist composition and its use

Abstract

The present invention provides a polyimide positive photoresist composition, comprising: a resin component; a crosslinking agent; a photosensitizer; and a solvent. The resin component comprises: 30wt% to 90wt% of a polyimide resin; 1wt% to 60wt% of a bisphenol resin; and 0.1wt% to 10wt% of a polysilane resin. The present invention also provides a use of the above-mentioned photoresist composition.

Description

Technical Field

[0001] The invention relates to a polyimide positive photoresist composition, in particular to a polyimide positive photoresist composition whose photoresist film prepared by the polyimide positive photoresist composition has good moisture resistance or an inclination angle of the insulating layer side wall. Background Art

[0002] In the preparation process of electronic devices (e.g., power elements, display devices, touch devices, semiconductor devices), various photoresist compositions such as positive or negative photoresist compositions are usually used as materials, and their photosensitivity is utilized to pattern and harden the photoresist compositions to form components such as passivation layers, protective layers, or insulating layers.

[0003] In an organic light-emitting diode (OLED) device, a polyimide (PI) insulating layer is formed on the organic light-emitting diode. In addition to defining a pixel on the organic light-emitting material to form the shape of the pixel, it can also enable each pixel to be driven with independent electrical properties. Polyimide is a polymer with a heteroimide ring in the skeleton formed by a polymerization condensation reaction of a dianhydride and a diamine. The currently known phenolic resin photoresist composition has poor water vapor barrier properties; while the currently known polyimide photoresist composition has a higher reaction temperature.

[0004] Therefore, it is urgent to provide an improved photoresist composition which, in addition to having the property of low temperature curing, also has good water vapor barrier properties to eliminate or alleviate the above problems. Summary of the invention

[0005] The main purpose of the present invention is to provide a polyimide positive photoresist composition, which can not only be cured at low temperature, but also provide an insulating layer with low taper angle or moisture resistance.

[0006] The polyimide positive photoresist composition of the present invention comprises: a resin component; a crosslinking agent; a photosensitizer; and a solvent. The resin component comprises: 30wt% to 90wt% of polyimide resin; 1wt% to 60wt% of bisphenol resin; and 0.1wt% to 10wt% of polysilane resin.

[0007] In the polyimide positive photoresist composition of the present invention, since the resin components include polyimide resin, bisphenol resin and polysilane resin, the polyimide positive photoresist composition of the present invention has a lower curing temperature compared to the polyimide resin itself; and compared to the phenolic resin itself, the polyimide positive photoresist composition of the present invention has better moisture resistance and water vapor barrier properties. In addition, in the polyimide positive photoresist composition of the present invention, by adding an appropriate amount of polysilane resin, compared to the polyimide positive photoresist composition without adding polysilane resin, it can also show better moisture resistance and water vapor barrier properties.

[0008] In the composition of the present invention, based on the total weight of the polyimide positive photoresist composition, the content of the resin component may be between 1wt% and 50wt%, the content of the crosslinking agent may be between 1wt% and 20wt%, the content of the photosensitive agent may be between 0.05wt% and 20wt%, and the balance is the solvent.

[0009] In the composition of the present invention, the content of the resin component may be between 1wt% and 50wt% based on the total weight of the polyimide positive photoresist composition. For example, the content of the resin component may be between 5wt% and 40wt%, or between 10wt% and 30wt%.

[0010] In the composition of the present invention, the content of the crosslinking agent may be between 1wt% and 20wt% based on the total weight of the polyimide resist composition. For example, the content of the crosslinking agent may be between 3wt% and 15wt%, or between 4wt% and 10wt%.

[0011] In the composition of the present invention, the content of the photosensitive agent may be between 0.05wt% and 20wt% based on the total weight of the polyimide positive photoresist composition. For example, the content of the photosensitive agent may be between 1wt% and 15wt%, between 1wt% and 10wt%, or between 3wt% and 7wt%.

[0012] In the composition of the present invention, based on the total weight of the resin components, the content of the polyimide resin may be between 30wt% and 90wt%, the content of the bisphenol resin may be between 1wt% and 60wt%, and the content of the polysilane resin may be between 0.1wt% and 10wt%.

[0013] In the composition of the present invention, the content of the polyimide resin may be between 30wt% and 90wt% based on the total weight of the resin component. For example, the content of the polyimide resin may be between 30wt% and 80wt%, between 30wt% and 70wt%, or between 30wt% and 65wt%.

[0014] In the composition of the present invention, the content of the bisphenol resin may be between 1wt% and 60wt% based on the total weight of the resin component. For example, the content of the bisphenol resin may be between 10wt% and 60wt%, between 20wt% and 60wt%, or between 25wt% and 60wt%.

[0015] In the composition of the present invention, the content of the polysilane resin may be between 0.1wt% and 10wt% based on the total weight of the resin component. For example, the content of the polysilane resin may be between 1wt% and 10wt%, between 3wt% and 10wt%, between 5wt% and 10wt%, or between 5wt% and 8wt%.

[0016] In the composition of the present invention, the polyimide resin can be represented by the following formula (I):

[0017]

[0018] Wherein, n is an integer. For example, n can be an integer from 3 to 2000.

[0019] In the composition of the present invention, the molecular weight of the polyimide resin may be between 3000 and 20000. For example, the molecular weight of the polyimide resin may be between 3000 and 10000, between 4500 and 10000, or between 4500 and 8000.

[0020] The bisphenol resin in the present invention can be composed of bisphenol A resin or bisphenol F resin, but bisphenol A resin is harmful to the environment; and other bisphenol resins with special functional groups face the problem of complex synthesis and high cost. Therefore, the bisphenol resin of the present invention is an alkali-soluble resin obtained by condensing bisphenol F with an aldehyde compound; specifically, the bisphenol resin is an alkali-soluble resin obtained by condensing bisphenol F with formaldehyde.

[0021] In the composition of the present invention, the bisphenol resin can be represented by the following formula (II):

[0022]

[0023] Wherein, m is an integer. For example, m can be an integer from 3 to 2000.

[0024] In the composition of the present invention, the molecular weight of the bisphenol resin may be between 5000 and 20000. For example, the molecular weight of the bisphenol resin may be between 7000 and 20000, between 7000 and 15000, or between 10000 and 15000.

[0025] In the composition of the present invention, the polysilane resin is a general term for compounds having silicon (Si)-silicon (Si) bonds as shown below, and the σ bonds are non-localized on the Si-Si bond main chain. The polysilane compound used in the present invention is a linear, cyclic, or network compound having Si-Si bonds as shown below, and there are no other special restrictions.

[0026] In the composition of the present invention, the polysilane resin may be represented by the following formula (1): (R12Si)m(1)

[0027] Wherein, each R1 is independently a hydrogen atom, an alkyl group, an alkenyl group, an arylalkyl group, an aryl group, an alkoxy group, a hydroxyl group, a phenolic hydroxyl group or an amine group. R1 may be all the same, or may be any combination of the above-described substituents. m is an integer from 2 to 10,000.

[0028] In the composition of the present invention, the polysilane resin may also be represented by the following formula (2): (R2Si)n(2) wherein each R2 is independently a hydrogen atom, an alkyl group, an alkenyl group, an arylalkyl group, an aryl group, an alkoxy group, a hydroxyl group, a phenolic hydroxyl group or an amino group. R2 may be all the same, or may be any combination of the above-described substituents. n is an integer from 4 to 10,000.

[0029] In the composition of the present invention, the polysilane resin may also be represented by the following formula (3):

[0030] (R32Si)x(R3Si)ySiz (3)

[0031] Wherein, each R3 is independently a hydrogen atom, an alkyl group, an alkenyl group, an arylalkyl group, an aryl group, an alkoxy group, a hydroxyl group, a phenolic hydroxyl group or an amine group. R3 may be all the same, or any combination of the above-described substituents may be used. x, y and z are integers greater than 0, and the sum of x, y and z is 5 to 10000, except when any two of x, y and z are 0.

[0032] In the linear polysilane compound and the cyclic polysilane compound represented by general formula (1), R1 is preferably the same or different hydrogen atom, alkyl group, alkenyl group, arylalkyl group, aryl group, alkoxy group, hydroxyl group, more preferably hydrogen atom, alkyl group, aryl group, alkoxy group, hydroxyl group. m is preferably 2 to 300, more preferably 4 to 150. For example, methylphenyl polysilane having an average degree of polymerization of 4 to 150 is preferred.

[0033] In the silicon network polymer represented by general formula (2), R2 is preferably the same or different hydrogen atom, alkyl, alkenyl, arylalkyl, aryl, alkoxy, hydroxyl, more preferably hydrogen atom, alkyl, aryl, alkoxy, hydroxyl. R2 is composed of alkyl and phenyl; alkyl is preferably methyl, and aryl is preferably phenyl. n is preferably 4 to 300, more preferably 4 to 150. For example, phenyl network polysilane having an average degree of polymerization of 4 to 150 is preferred.

[0034] In the network polymer with Si-Si bonding as the skeleton shown in general formula (3), R3 is preferably the same or different hydrogen atom, alkyl, alkenyl, arylalkyl, aryl, alkoxy, hydroxyl, more preferably hydrogen atom, alkyl, aryl, alkoxy, hydroxyl. R3 is composed of aryl; the aryl is more preferably composed of phenyl. x, y and z are preferably 1 to 300, 1 to 300 and 1 to 50, respectively.

[0035] As the polysilane compound, a polymer having the general formula (2) or (3) is preferably used from the viewpoint of having higher heat resistance.

[0036] Preferred polysilane compounds include those manufactured by Osaka Gas Chemical Co., Ltd. SI-10-10, SI-10-20, SI-20-10, SI-30-10, etc. Among them, SI-20-10 is preferably used.

[0037] In the present invention, the so-called "alkyl" includes straight-chain and branched alkyl groups, for example, straight-chain and branched C1 to C 10 alkyl, C1 to C6 alkyl, or C1 to C4 alkyl; and specific examples thereof include, but are not limited to, methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, neopentyl, and hexyl.

[0038] In the present invention, the term "alkoxy" refers to a molecular group formed by adding an oxygen atom to an alkyl group defined in the present invention, for example, a linear or branched C1 to C 10 Alkoxy, C1 to C6 alkoxy or C1 to C4 alkoxy; and specific examples thereof include, but are not limited to, methoxy, ethoxy, propoxy, 2-propoxy, butoxy, tert-butoxy, pentyloxy, and hexyloxy.

[0039] In the present invention, the term "alkenyl" refers to a hydrocarbon group containing at least one double bond and including straight-chain and branched chains, for example, a C3 to C4 hydrocarbon group containing at least one double bond and including straight-chain and branched chains. 10 A hydrocarbon group, a C3 to C6 hydrocarbon group, or a C3 to C4 hydrocarbon group; and specific examples thereof include, but are not limited to, ethylene, propylene, and butene.

[0040] In the present invention, the so-called "aryl" includes 6-membered carbon monocyclic, 10-membered carbon bicyclic, and 14-membered carbon tricyclic aromatic ring systems; and specific examples thereof include, but are not limited to: phenyl, naphthyl, pyrenyl, anthracenyl, and phenanthrenyl.

[0041] In the present invention, the so-called "arylalkyl" includes a molecular group formed by adding at least one aryl group to the alkyl group defined in the present invention.

[0042] In the composition of the present invention, the molecular weight of the polysilane resin may be between 100 and 10,000.

[0043] Polysilane was dissolved in heavy chloroform and the proton NMR was measured by NMR (400 MHz) to quantify the amount. Polysilane manufactured by Osaka Gas Chemical Co., Ltd. The molar ratio of substituents (methyl:phenyl) in SI-20-10 is about 1:3. The molar ratio of the substituents (methyl:phenyl) in SI-10-10 is about 1:1. The molar ratio of substituents (methyl:phenyl) in SI-10-20 is about 1:2.

[0044] In the composition of the present invention, the type of the photosensitive agent is not particularly limited as long as it is a compound that can generate an acid when exposed to active radiation. The photosensitive agent is a quinonediazide compound. Examples of the quinonediazide compound include well-known 1,2-quinonediazide-4-sulfonic acid ester compounds, 1,2-quinonediazide-5-sulfonic acid ester compounds, 1,2-quinonediazide-6-sulfonic acid ester compounds, 1,2-quinonediazide-7-sulfonic acid ester compounds, and 1,2-quinonediazide-8-sulfonic acid ester compounds. Specifically, 1,2-naphthoquinone diazide sulfonates of trihydroxy benzophenone, 1,2-naphthoquinone diazide sulfonates of tetrahydroxy benzophenone, 1,2-naphthoquinone diazide sulfonates of pentahydroxy benzophenone, 1,2-naphthoquinone diazide sulfonates of hexahydroxy benzophenone, 1,2-naphthoquinone diazide sulfonates of (polyhydroxy) alkane, etc. In the present invention, a specific example of the quinone diazide compound can be shown in the following formula (IV):

[0045]

[0046] Where D can be In addition, the aforementioned quinonediazide compounds may be used alone or in combination.

[0047] In the composition of the present invention, the type of solvent is not particularly limited, as long as the components in the composition are soluble therein. Specific examples of solvents include, but are not limited to, propylene glycol monomethyl ether acetate (Propylene Glycol Monomethyl Ether Acetate), propylene glycol methyl ether (Propylene Glycol Monomethyl Ether), lactic acid esters (e.g., ethyl lactate (Ethyl Lactate), methyl lactate), propylene glycol monoalkyl ethers (e.g., propylene glycol monoethyl ether, propylene glycol monopropyl ether), ketones (e.g., cyclohexanone), or lactones (e.g., γ-butyrolactone). The above solvents can be used alone or in combination of two or more without particular limitation. In an embodiment of the present invention, the solvent is ethyl lactate.

[0048] In the composition of the present invention, the type of crosslinking agent is not particularly limited, as long as it can initiate a crosslinking reaction of the photoresist composition due to an acid. The crosslinking agent can be a melamine-based crosslinking agent. The melamine-based crosslinking agent can include at least four -OCH3, for example, six -OCH3. In the present invention, specific examples of the melamine crosslinking agent may be 2,4,6-tris[bis(methoxymethyl)amino]-1,3,5-triazine or (N-(4-(bis(methoxymethyl)amino)-6-(methoxymethyl)amino-1,3,5-triazine-2-yl)-N-(methoxymethyl)amino)methanol, and their chemical formulas are shown in the following formulas (V-1) and (V-2), respectively.

[0049]

[0050] The composition of the present invention can be used on a light-emitting diode device to form an insulating layer of the light-emitting diode device. In one embodiment of the present invention, the composition of the present invention can be used to prepare a pixel definition layer of a light-emitting diode display device. When the insulating layer formed by the composition of the present invention is used as a pixel definition layer, the insulating layer can have a low cone angle, thereby improving the light-emitting quality of the light-emitting diode. In addition, in another embodiment of the present invention, the composition of the present invention can be used to prepare an insulating layer of a transistor substrate of a light-emitting diode device.

[0051] On the other hand, the composition of the present invention can be used in a low-temperature curing development process, wherein the low temperature can be below 250° C., for example, 200° C. to 250° C. Therefore, the composition of the present invention can also be used in the process of light-emitting diodes.

[0052] In the present invention, the so-called "taper angle" refers to the angle between the inclined sidewall and the bottom surface of the formed insulating layer; and the so-called "low taper angle" means that the aforementioned angle is less than 25 degrees, for example, greater than 10 degrees and less than 25 degrees. DETAILED DESCRIPTION

[0053] The following describes the implementation of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways according to different viewpoints and applications without departing from the spirit of the present invention.

[0054] As used in the specification and the appended claims, the singular forms "a," "an," and "the" include one or plural individuals unless the context dictates otherwise.

[0055] Unless otherwise indicated herein, the term "or" as used in the specification and the appended claims generally includes the meaning of "and / or".

[0056] The present invention will be described in more detail by way of examples, but these examples are not intended to limit the scope of the present invention. Unless otherwise specified, in the following preparation examples, examples and comparative examples, temperatures are in degrees Celsius, and parts and percentages are by weight. The relationship between parts by weight and parts by volume is like the relationship between kilograms and liters.

[0057] Synthesis of polyimide resin

[0058] Under a dry nitrogen stream, 91.6 parts by weight of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (hereinafter referred to as APAF) and 62.0 parts by weight of 4,4'-oxydiphthalic anhydride (hereinafter referred to as ODPA) were dissolved in 367.6 parts by weight of diethylene glycol methyl ethyl ether (MEDG), and reacted at 60°C for 2 hours. 129.5 parts by weight of hexahydrophthalic anhydride (hereinafter referred to as HHPA) as a terminal blocking agent was added to the reaction, and then stirred at 60°C for another 4 hours. 0.34 g of 1-ethyl-pyridine was added to the reaction, and then stirred at 180°C for 4 hours, with a solid content of 40%. After the stirring was completed, the solution was put into 3 L of water, filtered to recover the precipitate, washed with water 3 times, and then dried at 80°C for 20 hours using a vacuum dryer. The infrared absorption spectrum of the obtained polymer solid was measured, and the result was 1780 cm -1 Nearby, 1377cm -1 An absorption peak of an imide structure caused by polyimide was detected nearby, and its molecular weight was about 5000 to 6400 g / mol.

[0059] Bisphenol resin (Example)

[0060] In the following embodiments and comparative examples of the present invention, the bisphenol resin used is a polymer obtained by condensation of bisphenol F and formaldehyde, which is a polymer of formaldehyde and 4,4′-bis(hydroxylphenyl)methane (Formaldehyde, polymerwith 4,4′-Bis(hydroxylphenyl)methane), with a molecular weight of 11000 to 13000 g / mol and a solid content of 30%.

[0061] Polysilane resin

[0062] SI-20-10 has a weight average molecular weight (Mw) of 1200, a number average molecular weight (Mn) of 900 (GPC: polystyrene conversion), a heat resistance temperature of 354°C (5% weight reduction), and is a methylphenyl polysilane compound having terminal hydroxyl groups (methyl:phenyl = approximately 1:3 molar ratio), and a solid content of 100%.

[0063] Synthesis of acrylic resin (Comparative example)

[0064] In a flask equipped with a condenser and a stirrer, 4 parts by weight of a thermal free radical initiator 2,2'-azobisisobutyl (AIBN), 282 parts by weight of a solvent diethylene glycol methyl ethyl ether (MEDG), 33 parts by weight of methacrylate tricyclo [5,2,1,02,6] dec-8-yl ester (TCDMA), 21 parts by weight of methacrylic acid (MAA), 3 parts by weight of styrene, and 45.5 parts by weight of glycidyl methacrylate (GMA) are added. After nitrogen substitution, rapid stirring is started, and the temperature is maintained at 65° C. for 3.5 hours, and then the temperature is raised to 75° C. for 2.5 hours to obtain an acrylic resin with a molecular weight of about 8000-14000 g / mol and a solid content of 30%.

[0065] Phenolic resin (comparative example)

[0066] In the comparative example of the present invention, the phenolic resin used is m-methylphenol: p-methylphenol: 2,4-dimethylphenol and 2,5-dimethylphenol in a ratio of 45:45:10, the molecular weight is about 15,000, and the solid content is 100%.

[0067] Polyimide positive photoresist composition

[0068] The polyimide resin, bisphenol resin, polysilane resin, acrylic resin and phenolic resin prepared above were mixed with a crosslinking agent, a photosensitizer and a solvent according to the composition formula shown in Table 1 to prepare the polyimide positive photoresist compositions of Examples 1 to 4 and Comparative Examples 1 to 3.

[0069] Photoresist film preparation

[0070] The photoresist compositions of Examples 1 to 4 and Comparative Examples 1 to 3 were coated on a Mo / Al / Mo substrate and then pre-baked at 120°C for 120 seconds to obtain a photoresist layer with a thickness of 3 μm. The photoresist layer was exposed using an Ultratech 1500 stepper (Boardband; NA=0.24); developed at 23°C with 2.38% TMAH for 30 seconds, and washed with deionized water for 30 seconds. The baking process was performed under nitrogen (oxygen concentration was below 50 ppm), and the temperature was raised to 230°C (heating rate 3.5°C / min) and maintained at this temperature for 30 minutes. Finally, the sidewall shape of each photoresist pattern after development was observed by SEM, and the results are shown in Table 1 below.

[0071] Humidity resistance test

[0072] The patterned photoresist film prepared above was placed in pure water heated to 90° C. for 48 hours, and then a metallographic microscope was used to observe whether water intruded into the photoresist between the substrates and peeled off the photoresist pattern.

[0073] Table 1

[0074]

[0075] Note 1: The value in parentheses for each resin is the percentage of the solid content of the resin based on the total weight of the resin component.

[0076] Note 2: The values ​​outside the brackets of each resin are the added amount of the resin. Among them, bisphenol resin is added at a solid content of 30%; polyimide resin is added at a solid content of 40%; acrylic resin is added at a solid content of 30%; and polysilane resin and phenolic resin are added at a solid content of 100% respectively.

[0077] Note 3: Percentages are by weight.

[0078] Note 4: ◎ indicates good; X indicates poor.

[0079] The photosensitizer in Table 1 is a 5-naphthoquinone diazide sulfonate photosensitizer, as shown in the following formula (IV), and its trade name is TPPA-250.

[0080]

[0081] Where D is

[0082] The crosslinking agent melamine compound in Table 1 is represented by the following formula (V-1), and its trade name is NIKALAC MW-390.

[0083]

[0084] As shown in the results of Table 1, when an appropriate amount of polysilane resin is added (Examples 1 to 4), the photoresist film formed has good moisture resistance; however, the composition without adding polysilane resin (Comparative Example 1) has poor moisture resistance. In addition, when the resin components include bisphenol resin, polyimide resin and polysilane resin at the same time (Examples 1 to 4), the photoresist film formed has good moisture resistance and an ideal insulating layer sidewall inclination angle (less than 25 degrees); however, when the resin components use polyimide resin and acrylic resin (Comparative Example 2), the photoresist film formed not only has poor moisture resistance, but also the insulating layer sidewall inclination angle of the formed photoresist film is close to vertical, and cannot be used on the pixel definition layer of the organic light emitting diode device. In addition, when the resin component includes bisphenol resin, polyimide resin and polysilane resin at the same time (Examples 1 to 4), the photoresist film formed has good moisture resistance and an ideal insulating layer side wall inclination angle (less than 25 degrees); but when the resin component uses phenolic resin (Comparison Example 3), the photoresist film formed has a better insulating layer side wall inclination angle, but the moisture resistance is not ideal.

[0085] In summary, in the polyimide positive photoresist composition of the present invention, by using appropriate amounts of bisphenol resin, polyimide resin and polysilane resin, the photoresist composition can be cured at low temperature. In addition, the photoresist film formed after low temperature curing has better moisture resistance and an ideal insulating layer sidewall tilt angle (less than 25 degrees), so it can be effectively applied to the pixel definition layer of the light-emitting diode device.

[0086] Although the present invention has been described through a number of embodiments, it should be understood that many other possible modifications and variations may be made without departing from the spirit and scope of the present invention.

Claims

1. A polyimide positive photoresist composition, comprising: A resin composition comprising: 30 wt % to 90 wt % of a polyimide resin; 1 wt % to 60 wt % of a bisphenol resin, wherein the bisphenol resin is an alkali-soluble resin obtained by condensing bisphenol F with an aldehyde compound; and 0.1 wt % to 10 wt % of a polysilane resin; a cross-linking agent; a photosensitizer; and A solvent; The polyimide resin is shown in the following formula (I): (I) Wherein, n is an integer and the molecular weight is between 3000 and 20000.

2. The polyimide positive photoresist composition according to claim 1, wherein the content of the resin component is between 1 wt% and 50 wt%, the content of the cross-linking agent is between 1 wt% and 20 wt%, the content of the photosensitizer is between 0.05 wt% and 20 wt%, and the balance is solvent.

3. The polyimide positive photoresist composition according to claim 1, wherein the bisphenol resin is represented by the following formula (II): (II) in, m is an integer, and the molecular weight is between 5000 and 20000.

4. The polyimide positive photoresist composition according to claim 1, wherein the polysilane resin is a network polymer as shown in the following formula (2): (R2Si)n (2) in, R2 are the same or different and are each independently a hydrogen atom, an alkyl group, an alkenyl group, an arylalkyl group, an aryl group, an alkoxy group, a hydroxyl group, a phenolic hydroxyl group or an amino group; n is an integer from 4 to 1000. 5 . The polyimide positive photoresist composition according to claim 1 , wherein the photosensitizer is a quinonediazide compound. 6 . The polyimide positive photoresist composition according to claim 1 , wherein the crosslinking agent is a melamine-based crosslinking agent.

7. The polyimide positive photoresist composition according to claim 1, wherein the crosslinking agent is 2,4,6-tris[di(methoxymethyl)amino]-1,3,5-triazine, (N-(4-(di(methoxymethyl)amino)-6-(methoxymethyl)amino-1,3,5-triazine-2-yl)-N-(methoxymethyl)amino)methanol or a combination thereof.

8. Use of the polyimide positive photoresist composition according to any one of claims 1 to 7, which is used on an insulating layer of a light emitting diode device.

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