High frequency module and communication device

Abstract

Miniaturization is achieved. A high-frequency module (1) includes a mounting substrate (9), a power amplifier (11), and an electronic component (2). The mounting substrate (9) has a first main surface (91) and a second main surface (92) facing each other. The power amplifier (11) is arranged on the mounting substrate. The power amplifier (11) has a driver-stage amplifier (111) and an output-stage amplifier (112). The driver-stage amplifier (111) is arranged on the second main surface (92) of the mounting substrate (9). The output-stage amplifier (112) is arranged on the first main surface (91) of the mounting substrate (9). The electronic component (2) is arranged on the first main surface (91) of the mounting substrate (9). When viewed from above in the thickness direction (D1) of the mounting substrate (9), the electronic component (2) overlaps with the driver-stage amplifier (111).

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including a power amplifier and a communication device including the high-frequency module. Background Art

[0002] Conventionally, a power amplifier module (e.g., see Patent Document 1) is known. It includes a driver-stage amplifier, an output-stage amplifier, an inter-stage matching circuit, an output matching circuit, and a control circuit (controller). In mobile communication terminals such as mobile phones, power amplifier modules are high-frequency modules that amplify the power of input signals to the level required for transmission to a base station.

[0003] The control circuit controls the actions of the driver-stage amplifier and the output-stage amplifier.

[0004] The power amplifier module's driver-stage amplifier, output-stage amplifier, inter-stage matching circuit, output matching circuit, and control circuit components are mounted on a mounting substrate. The driver-stage amplifier and output-stage amplifier are integrated into a single IC chip.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Laid-Open No. 2018-181943 Summary of the Invention

[0008] Problems to be solved by the invention

[0009] In high-frequency modules such as the one disclosed in Patent Document 1, miniaturization is sometimes desired.

[0010] An object of the present invention is to provide a high-frequency module and a communication device that can be miniaturized.

[0011] Solutions for solving problems

[0012] A high-frequency module according to one embodiment of the present invention includes a mounting substrate, a power amplifier, and an electronic component. The mounting substrate has a first principal surface and a second principal surface facing each other. The power amplifier is disposed on the mounting substrate. The electronic component is disposed on the mounting substrate. The power amplifier includes a driver-stage amplifier and an output-stage amplifier. The driver-stage amplifier is disposed on the second principal surface of the mounting substrate. The output-stage amplifier is disposed on the first principal surface of the mounting substrate. The electronic component is disposed on the first principal surface of the mounting substrate. When viewed from above in the thickness direction of the mounting substrate, at least a portion of the electronic component overlaps with the driver-stage amplifier.

[0013] A communication device according to one embodiment of the present invention includes a signal processing circuit and the high-frequency module. The power amplifier of the high-frequency module amplifies the transmission signal from the signal processing circuit and outputs the amplified signal.

[0014] Effects of the Invention

[0015] The high-frequency module and communication device according to the above-described aspects of the present invention can be miniaturized. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a plan view of the high-frequency module according to the first embodiment.

[0017] Figure 2 This is a bottom view of the high-frequency module as above.

[0018] Figure 3 The high frequency module shown above is Figure 1 AA line cross-section diagram.

[0019] Figure 4 This is a circuit diagram of a communication device equipped with the same high-frequency module.

[0020] Figure 5 This is a cross-sectional view of a high-frequency module according to a modified example of the first embodiment.

[0021] Figure 6 This is a plan view of a high-frequency module according to the second embodiment.

[0022] Figure 7 This is a bottom view of the high-frequency module as above.

[0023] Figure 8 The high frequency module shown above is Figure 6 AA line cross-section diagram.

[0024] Figure 9 This is a plan view of a high-frequency module according to the third embodiment.

[0025] Figure 10 This is a bottom view of the high-frequency module as above.

[0026] Figure 11 The high frequency module shown above is Figure 9 AA line cross-section diagram. DETAILED DESCRIPTION

[0027] In the following embodiments, etc., reference is made to Figures 1 to 3 5 to 11 are schematic diagrams, and the size ratios and thickness ratios of the various structural elements in the diagrams do not necessarily reflect the actual size ratios.

[0028] (Implementation Method 1)

[0029] Refer to the following Figures 1 to 4 The high-frequency module 1 and the communication device 300 according to the first embodiment will be described.

[0030] (1) High-frequency modules and communication devices

[0031] (1.1) Circuit Structure of High-Frequency Module and Communication Device

[0032] Reference Figure 4 The circuit configurations of the high-frequency module 1 and the communication device 300 according to the first embodiment will be described.

[0033] The high-frequency module 1 involved in Embodiment 1 is used in, for example, a communication device 300. The communication device 300 is, for example, a mobile phone (e.g., a smartphone), but is not limited thereto and may also be, for example, a wearable terminal (e.g., a smartwatch). The high-frequency module 1 is, for example, a module that can support the 4G (fourth generation mobile communication) standard and the 5G (fifth generation mobile communication) standard. The 4G standard is, for example, the 3GPP LTE (Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is a module that can support carrier aggregation and dual connectivity.

[0034] The high-frequency module 1 is configured, for example, to amplify a transmission signal input from a signal processing circuit 301 and output the amplified signal to an antenna 310. Furthermore, the high-frequency module 1 is configured to amplify a reception signal input from an antenna 310 and output the amplified signal to the signal processing circuit 301. The signal processing circuit 301 is not a component of the high-frequency module 1, but rather a component of a communication device 300 including the high-frequency module 1. The high-frequency module 1 according to Embodiment 1 is controlled, for example, by the signal processing circuit 301 included in the communication device 300. The communication device 300 includes the high-frequency module 1 and the signal processing circuit 301. The communication device 300 further includes an antenna 310. The communication device 300 further includes a circuit substrate on which the high-frequency module 1 is mounted. The circuit substrate is, for example, a printed circuit board. The circuit substrate has a ground electrode to which a ground potential is applied.

[0035] The signal processing circuit 301 includes, for example, an RF signal processing circuit 302 and a baseband signal processing circuit 303. The RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit) and performs signal processing on high-frequency signals. The RF signal processing circuit 302 performs signal processing such as up-conversion on the high-frequency signal (transmit signal) output from the baseband signal processing circuit 303 and outputs the processed high-frequency signal. Furthermore, the RF signal processing circuit 302 performs signal processing such as down-conversion on the high-frequency signal (receive signal) output from the high-frequency module 1 and outputs the processed high-frequency signal to the baseband signal processing circuit 303. The baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 generates an I-phase signal and a Q-phase signal based on the baseband signal. The baseband signal can be, for example, an externally input audio signal or image signal. The baseband signal processing circuit 303 performs IQ modulation processing by combining the I-phase signal and the Q-phase signal and outputs the transmit signal. At this point, a modulated signal (IQ signal) is generated as a transmission signal by amplitude modulating a carrier signal of a specified frequency with a period longer than the carrier signal's period. The received signal processed by baseband signal processing circuit 303 is used, for example, as an image signal for display or as an audio signal for communication. High-frequency module 1 transmits high-frequency signals (received and transmitted signals) between antenna 310 and RF signal processing circuit 302 of signal processing circuit 301.

[0036] The high-frequency module 1 according to the first embodiment includes a power amplifier 11 and a controller 14. Furthermore, the high-frequency module 1 includes a low-noise amplifier 21 and five duplexers 32A, 32B, 32C, 32D, and 32E. Duplexer 32A includes a transmission filter 12A and a reception filter 22A. Duplexer 32B includes a transmission filter 12B and a reception filter 22B. Duplexer 32C includes a transmission filter 12C and a reception filter 22C. Duplexer 32D includes a transmission filter 12D and a reception filter 22D. Duplexer 32E includes a transmission filter 12E and a reception filter 22E. Furthermore, the high-frequency module 1 includes a switch 4 (hereinafter also referred to as the first switch 4), a switch 5 (hereinafter also referred to as the second switch 5), and a switch 6 (hereinafter also referred to as the third switch 6). Furthermore, the high-frequency module 1 includes an output matching circuit 13. Furthermore, the high-frequency module 1 includes a low-pass filter 3. Although not shown, the high-frequency module 1 also includes multiple matching circuits, one for each signal path between each of the five duplexers 32A to 32E and the first switch 4. Each of the multiple matching circuits is used to achieve impedance matching between the antenna 310 connected to the antenna terminal 81 and the first switch 4, and the corresponding duplexer 32A to 32E. Each of the multiple matching circuits is comprised of, for example, a single inductor, but is not limited thereto and may also include, for example, multiple inductors and multiple capacitors.

[0037] The high frequency module 1 includes a plurality of external connection terminals 80. The plurality of external connection terminals 80 include an antenna terminal 81, a signal input terminal 82, a signal output terminal 83, a plurality of control terminals 84, and a plurality of ground terminals 85 (see Figure 2 and Figure 3 The plurality of ground terminals 85 are terminals electrically connected to the ground electrode of the circuit board included in the communication device 300 and are supplied with a ground potential. Furthermore, the plurality of external connection terminals 80 include a first power supply terminal Vcc1 and a second power supply terminal Vcc2.

[0038] The power amplifier 11 is provided in the signal path Tx1 for transmitting signals. For example, the power amplifier 11 amplifies the transmit signal from the signal processing circuit 301 and outputs it. The power amplifier 11 amplifies the input transmit signal of a predetermined frequency band and outputs it. Here, the predetermined frequency band includes, for example, a first communication frequency band, a second communication frequency band, a third communication frequency band, a fourth communication frequency band, and a fifth communication frequency band. The first communication frequency band corresponds to the transmit signal passing through the transmit filter 12A. The second communication frequency band corresponds to the transmit signal passing through the transmit filter 12B. The third communication frequency band corresponds to the transmit signal passing through the transmit filter 12C. The fourth communication frequency band corresponds to the transmit signal passing through the transmit filter 12D. The fifth communication frequency band corresponds to the transmit signal passing through the transmit filter 12E.

[0039] The power amplifier 11 includes a driver-stage amplifier 111, an output-stage amplifier 112, and an inter-stage matching circuit 113. The output-stage amplifier 112 is connected in series with the output side of the driver-stage amplifier 111. The amplification factor of the driver-stage amplifier 111 is lower than that of the output-stage amplifier 112. The inter-stage matching circuit 113 is connected between the driver-stage amplifier 111 and the output-stage amplifier 112. The inter-stage matching circuit 113 matches the impedance of the driver-stage amplifier 111 with the impedance of the output-stage amplifier 112. The inter-stage matching circuit 113 includes a circuit element 114. The circuit element 114 is, for example, an inductor disposed between the driver-stage amplifier 111 and the output-stage amplifier 112. The inductor is, for example, a chip inductor. The inter-stage matching circuit 113 may also include a capacitor in addition to the inductor.

[0040] In the power amplifier 11, the input terminal of the driver-stage amplifier 111 is connected to the signal input terminal 82. The input terminal of the driver-stage amplifier 111 is connected to the signal processing circuit 301 via the signal input terminal 82. The signal input terminal 82 is a terminal for inputting a high-frequency signal (transmission signal) from an external circuit (e.g., the signal processing circuit 301) into the high-frequency module 1. In the power amplifier 11, the output terminal of the output-stage amplifier 112 is connected to the common terminal 50 of the second switch 5 via the output matching circuit 13. The power amplifier 11 is controlled by the controller 14.

[0041] The controller 14 is connected to the driver-stage amplifier 111 and the output-stage amplifier 112 of the power amplifier 11. The controller 14 is connected to the signal processing circuit 301 via multiple (e.g., four) control terminals 84. The multiple control terminals 84 are terminals for inputting control signals from an external circuit (e.g., the signal processing circuit 301) into the controller 14. The controller 14 controls the power amplifier 11 based on the control signals received from the multiple control terminals 84. The multiple control terminals 84, for example, support the MIPI (Mobile Industry Processor Interface) standard. The controller 14 has multiple terminals 148 connected to the multiple control terminals 84 as input units for receiving control signals. The multiple terminals 148, for example, support the MIPI standard. The controller 14 controls the power amplifier 11 according to the control signals from the RF signal processing circuit 302. After receiving the control signals from the RF signal processing circuit 302 via the multiple terminals 148, the controller 14 supplies a first bias current to the driver-stage amplifier 111 and a second bias current to the output-stage amplifier 112 in accordance with the control signals. Although not shown in the drawings, the controller 14 is also connected to the first switch 4 and the second switch 5 , and controls the first switch 4 and the second switch 5 based on the above-mentioned control signal.

[0042] The power amplifier 11 performs envelope tracking. The power amplifier 11 is controlled by a control circuit (not shown) to perform envelope tracking. The control circuit controls the power supply voltage of the power amplifier 11 based on the input signal level of the transmission signal (transmission signal from the signal processing circuit 301) input to the power amplifier 11. More specifically, in the high-frequency module 1, a first power supply voltage and a second power supply voltage corresponding to the amplitude level of the transmission signal are respectively supplied to a first power supply terminal Vcc1 for supplying power to the driver-stage amplifier 111 and a second power supply terminal Vcc2 for supplying power to the output-stage amplifier 112. The control circuit is powered by, for example, a battery of the communication device 300. The control circuit generates a first power supply voltage and a second power supply voltage based on, for example, a power supply control signal (envelope signal) from the baseband signal processing circuit 303 of the signal processing circuit 301, and supplies the first power supply voltage and the second power supply voltage to the first power supply terminal Vcc1 and the second power supply terminal Vcc2, respectively. The baseband signal processing circuit 303 detects the amplitude level of the modulated signal based on the IQ signal and outputs a power supply control signal to the control circuit so that the first power supply voltage and the second power supply voltage become levels corresponding to the amplitude level of the transmission signal.

[0043] The low-noise amplifier 21 has an input terminal and an output terminal. The low-noise amplifier 21 is provided in the signal path Rx1 for receiving signals. The low-noise amplifier 21 amplifies the received signal of the above-mentioned predetermined frequency band input to the input terminal and outputs it from the output terminal. The input terminal of the low-noise amplifier 21 is connected to the common terminal 60 of the third switch 6. An input matching circuit may also be provided between the input terminal of the low-noise amplifier 21 and the common terminal 60 of the third switch 6. The output terminal of the low-noise amplifier 21 is connected to the signal output terminal 83. The output terminal of the low-noise amplifier 21 is connected to the signal processing circuit 301, for example, via the signal output terminal 83. The signal output terminal 83 is a terminal for outputting the high-frequency signal (received signal) from the low-noise amplifier 21 to an external circuit (for example, the signal processing circuit 301).

[0044] The transmitting filter 12A is, for example, a filter with the transmission band of the first communication frequency band as its passband. The transmitting filter 12B is, for example, a filter with the transmission band of the second communication frequency band as its passband. The transmitting filter 12C is, for example, a filter with the transmission band of the third communication frequency band as its passband. The transmitting filter 12D is, for example, a filter with the transmission band of the fourth communication frequency band as its passband. The transmitting filter 12E is, for example, a filter with the transmission band of the fifth communication frequency band as its passband. The receiving filter 22A is, for example, a filter with the reception band of the first communication frequency band as its passband. The receiving filter 22B is, for example, a filter with the reception band of the second communication frequency band as its passband. The receiving filter 22C is, for example, a filter with the reception band of the third communication frequency band as its passband. The receiving filter 22D is, for example, a filter with the reception band of the fourth communication frequency band as its passband. The receiving filter 22E is, for example, a filter with the reception band of the fifth communication frequency band as its passband.

[0045] First switch 4 has a common terminal 40 and five select terminals 41 to 45. First switch 4 is an antenna switch connected to antenna terminal 81. In first switch 4, common terminal 40 is connected to antenna terminal 81. More specifically, common terminal 40 is connected to antenna terminal 81 via low-pass filter 3. Antenna terminal 81 is connected to antenna 310. Select terminal 41 is connected to the connection point between the output terminal of transmission filter 12A and the input terminal of reception filter 22A. Select terminal 42 is connected to the connection point between the output terminal of transmission filter 12B and the input terminal of reception filter 22B. Select terminal 43 is connected to the connection point between the output terminal of transmission filter 12C and the input terminal of reception filter 22C. Select terminal 44 is connected to the connection point between the output terminal of transmission filter 12D and the input terminal of reception filter 22D. Select terminal 45 is connected to the connection point between the output terminal of transmission filter 12E and the input terminal of reception filter 22E. The first switch 4 is, for example, a switch capable of connecting the common terminal 40 to at least one of the five selection terminals 41 to 45. Here, the first switch 4 is, for example, a switch capable of one-to-one connection and one-to-many connection.

[0046] The first switch 4 is controlled by, for example, the controller 14. The first switch 4 switches the connection state between the common terminal 40 and the five selection terminals 41 to 45, for example, according to a control signal from the controller 14. The first switch 4 is, for example, a switch IC (Integrated Circuit).

[0047] The second switch 5 has a common terminal 50 and five selection terminals 51 to 55. The common terminal 50 is connected to the output terminal of the output stage amplifier 112 via the output matching circuit 13. The selection terminal 51 is connected to the input terminal of the transmission filter 12A (the transmission terminal of the duplexer 32A). The selection terminal 52 is connected to the input terminal of the transmission filter 12B (the transmission terminal of the duplexer 32B). The selection terminal 53 is connected to the input terminal of the transmission filter 12C (the transmission terminal of the duplexer 32C). The selection terminal 54 is connected to the input terminal of the transmission filter 12D (the transmission terminal of the duplexer 32D). The selection terminal 55 is connected to the input terminal of the transmission filter 12E (the transmission terminal of the duplexer 32E). The second switch 5 is, for example, a switch capable of connecting the common terminal 50 to at least one of the five selection terminals 51 to 55. Here, the second switch 5 is, for example, a switch capable of one-to-one connection and one-to-many connection. The second switch 5 is a frequency band selection switch having a function of switching signal paths for a plurality of transmission signals having different communication frequency bands.

[0048] The second switch 5 is controlled by, for example, the controller 14. The second switch 5 switches the connection state between the common terminal 50 and the five selection terminals 51 to 55, for example, according to a control signal from the controller 14. The second switch 5 is, for example, a switch IC.

[0049] The third switch 6 has a common terminal 60 and five selection terminals 61 to 65. The common terminal 60 is connected to the input terminal of the low-noise amplifier 21. The selection terminal 61 is connected to the output terminal of the reception filter 22A (the reception terminal of the duplexer 32A). The selection terminal 62 is connected to the output terminal of the reception filter 22B (the reception terminal of the duplexer 32B). The selection terminal 63 is connected to the output terminal of the reception filter 22C (the reception terminal of the duplexer 32C). The selection terminal 64 is connected to the output terminal of the reception filter 22D (the reception terminal of the duplexer 32D). The selection terminal 65 is connected to the output terminal of the reception filter 22E (the reception terminal of the duplexer 32E). The third switch 6 is, for example, a switch capable of connecting the common terminal 60 to at least one of the five selection terminals 61 to 65. Here, the third switch 6 is, for example, a switch capable of one-to-one connection and one-to-many connection.

[0050] The third switch 6 is controlled by, for example, the controller 14. The third switch 6 switches the connection state between the common terminal 60 and the five selection terminals 61 to 65, for example, according to a control signal from the controller 14. The third switch 6 is, for example, a switch IC.

[0051] Output matching circuit 13 is provided in the signal path between the output terminal of output-stage amplifier 112 of power amplifier 11 and common terminal 50 of second switch 5. Output matching circuit 13 is a circuit for achieving impedance matching between output-stage amplifier 112 and transmission filters 12A to 12E. Output matching circuit 13 is composed of, for example, a single circuit element 131 (here, an inductor), but is not limited to this and may also include, for example, multiple inductors and multiple capacitors.

[0052] Although not shown, high-frequency module 1 also includes an input matching circuit. This input matching circuit is provided in the signal path between the input terminal of low-noise amplifier 21 and common terminal 60 of third switch 6. The input matching circuit is used to achieve impedance matching between low-noise amplifier 21 and reception filters 22A to 22E. The input matching circuit is comprised of, for example, a single inductor, but is not limited thereto and may also include, for example, multiple inductors and multiple capacitors.

[0053] (1.2) Structure of high-frequency module

[0054] Refer to the following Figures 1 to 3 The structure of the high-frequency module 1 will be described.

[0055] The high-frequency module 1 includes a mounting substrate 9 and a power amplifier 11 .

[0056] The mounting substrate 9 has a first main surface 91 and a second main surface 92 facing each other in the thickness direction D1 of the mounting substrate 9. The mounting substrate 9 is, for example, a printed circuit board, an LTCC (Low Temperature Co-fired Ceramics) substrate, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate. Here, the mounting substrate 9 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are stacked in the thickness direction D1 of the mounting substrate 9. The plurality of conductive layers are formed into a predetermined pattern determined by the layer. Each of the plurality of conductive layers includes one or more conductor portions in a plane orthogonal to the thickness direction D1 of the mounting substrate 9. The material of each conductive layer is, for example, copper. The plurality of conductive layers include a ground layer. In the high-frequency module 1, the plurality of ground terminals 85 are electrically connected to the ground layer via a via conductor or the like provided on the mounting substrate 9.

[0057] The mounting substrate 9 is not limited to a printed circuit board or an LTCC substrate, but may also be a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed into a prescribed pattern. In the case where there are multiple insulating layers, the multiple insulating layers are formed into a prescribed pattern determined by the layer. The conductive layer is formed into a prescribed pattern different from the prescribed pattern of the insulating layer. In the case where there are multiple conductive layers, the multiple conductive layers are formed into a prescribed pattern determined by the layer. The conductive layer may also include one or more rewiring portions. In the wiring structure, the first of the two surfaces facing each other in the thickness direction of the multilayer structure is the first main surface 91 of the mounting substrate 9, and the second surface is the second main surface 92 of the mounting substrate 9. The wiring structure may also be, for example, an interposer. The interposer may be an interposer using a silicon substrate, or it may be a substrate composed of multiple layers.

[0058] The first principal surface 91 and the second principal surface 92 of the mounting substrate 9 are separated in the thickness direction D1 of the mounting substrate 9 and intersect with the thickness direction D1 of the mounting substrate 9. The first principal surface 91 of the mounting substrate 9 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 9, but may also include, for example, the side surface of the conductor portion as a surface that is not orthogonal to the thickness direction D1. In addition, the second principal surface 92 of the mounting substrate 9 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 9, but may also include, for example, the side surface of the conductor portion as a surface that is not orthogonal to the thickness direction D1. In addition, the first principal surface 91 and the second principal surface 92 of the mounting substrate 9 may also be formed with fine bumps, recesses or protrusions. When viewed from above in the thickness direction D1 of the mounting substrate 9, the mounting substrate 9 is rectangular in shape, but is not limited thereto and may also be, for example, square in shape.

[0059] The high-frequency module 1 includes the aforementioned power amplifier 11, controller 14, low-noise amplifier 21, five duplexers 32A to 32E, a first switch 4, a second switch 5, a third switch 6, an output matching circuit 13, an input matching circuit, five matching circuits disposed between the five duplexers 32A to 32E and the first switch 4, and a low-pass filter 3 as a plurality of circuit elements. The plurality of circuit elements of the high-frequency module 1 are mounted on a mounting substrate 9. Mounting includes placing the circuit elements on the mounting substrate 9 (mechanically connecting them) and electrically connecting the circuit elements to the mounting substrate 9 (using appropriate conductors). The plurality of circuit elements are not limited to electronic components mounted on the mounting substrate 9 but may also include circuit elements disposed within the mounting substrate 9.

[0060] In the high-frequency module 1 according to the first embodiment, the output-stage amplifier 112 and the driver-stage amplifier 111 of the power amplifier 11 are formed from separate IC chips. In the high-frequency module 1 according to the first embodiment, the output-stage amplifier 112 is mounted on the first principal surface 91 of the mounting substrate 9. Therefore, the output-stage amplifier 112 is located on the first principal surface 91 of the mounting substrate 9. Furthermore, in the high-frequency module 1 according to the first embodiment, the first switch 4 is mounted on the second principal surface 92 of the mounting substrate 9. Therefore, the first switch 4 is located on the second principal surface 92 of the mounting substrate 9. In the high-frequency module 1 according to the first embodiment, the semiconductor chip 10 including the driver-stage amplifier 111, the controller 14, and the second switch 5 is mounted on the second principal surface 92 of the mounting substrate 9. Therefore, the IC chip 10 is located on the second principal surface 92 of the mounting substrate 9. Furthermore, in the high-frequency module 1 according to the first embodiment, the IC chip 20, which integrates the third switch 6 and the low-noise amplifier 21 into a single chip, is mounted on the second principal surface 92 of the mounting substrate 9. Therefore, the IC chip 20 is arranged on the second main surface 92 of the mounting substrate 9 .

[0061] In the high-frequency module 1, the output-stage amplifier 112 is an IC chip comprising a substrate and an IC unit. The IC unit includes at least one transistor formed on the substrate. The substrate is, for example, a gallium arsenide substrate. The IC unit amplifies the transmission signal input to the input terminal of the output-stage amplifier 112. The transistor is, for example, an HBT (Heterojunction Bipolar Transistor). The output-stage amplifier 112 may also include a capacitor for DC blocking, for example. The IC chip comprising the output-stage amplifier 112 is flip-chip mounted on the first principal surface 91 of the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer periphery of the output-stage amplifier 112 is a quadrilateral.

[0062] In the high-frequency module 1, the IC chip 10 includes a substrate, a first circuit unit formed on the substrate, which serves as a driver-stage amplifier 111; a second circuit unit formed on the substrate, which serves as a controller 14; and a third circuit unit formed on the substrate, which serves as a second switch 5. The substrate is, for example, a silicon substrate. The first circuit unit includes transistors, which function as the driver-stage amplifier 111, amplifying the input transmission signal and outputting it. The transistors included in the first circuit unit are, for example, bipolar transistors. The second circuit unit functions as the controller 14, which controls the power amplifier 11, the first switch 4, and the second switch 5. The third circuit unit includes a common terminal 50 of the second switch 5, five select terminals 51 to 55, and a plurality of FETs (field effect transistors).

[0063] The IC chip 10 is flip-chip mounted on the second main surface 92 of the mounting substrate 9. When viewed from the thickness direction D1 of the mounting substrate 9, the outer peripheral shape of the IC chip 10 is a quadrilateral.

[0064] In the high-frequency module 1, the IC chip 20 including the third switch 6 and the low-noise amplifier 21 includes a substrate, a first circuit portion formed on the substrate, which serves as the third switch 6, and a second circuit portion formed on the substrate, which serves as the low-noise amplifier 21. The substrate is, for example, a silicon substrate. The first circuit portion includes a common terminal 60 for the third switch 6, six select terminals 61 to 65, and a plurality of FETs. The second circuit portion amplifies and outputs the input received signal. The IC chip 20 is flip-chip mounted on the second main surface 92 of the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, the outer periphery of the IC chip 20 is a square.

[0065] Each of the five duplexers 32A to 32E is, for example, a bare chip duplexer. As described above, duplexer 32A includes transmission filter 12A and reception filter 22A. Duplexer 32B includes transmission filter 12B and reception filter 22B. Duplexer 32C includes transmission filter 12C and reception filter 22C. Duplexer 32D includes transmission filter 12D and reception filter 22D. Duplexer 32E includes transmission filter 12E and reception filter 22E.

[0066] Each of the five transmission filters 12A to 12E and the five reception filters 22A to 22E is, for example, a ladder filter having multiple (e.g., four) series-arm resonators and multiple (e.g., three) parallel-arm resonators. Each of the five transmission filters 12A to 12E and the five reception filters 22A to 22E is, for example, an elastic wave filter, wherein each of the multiple series-arm resonators and the multiple parallel-arm resonators is composed of an elastic wave resonator. For example, the elastic wave filter is a surface acoustic wave filter utilizing surface acoustic waves.

[0067] In the surface acoustic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is, for example, a SAW (Surface Acoustic Wave) resonator.

[0068] Each of the five duplexers 32A to 32E includes, for example, a substrate, a first circuit portion formed on the substrate as a transmission filter, and a second circuit portion formed on the substrate as a reception filter. The substrate is, for example, a piezoelectric substrate. Examples of piezoelectric substrates include lithium tantalate and lithium niobate substrates. The first and second circuit portions include multiple IDT (interdigital transducer) electrodes corresponding one-to-one to the multiple series-arm resonators, and multiple IDT electrodes corresponding one-to-one to the multiple parallel-arm resonators.

[0069] The five duplexers 32A to 32E are mounted on the first principal surface 91 of the mounting substrate 9. Thus, the five duplexers 32A to 32E are mounted on the mounting substrate 9. When viewed from the thickness direction D1 of the mounting substrate 9, the outer peripheral shape of the five duplexers 32A to 32E is a square.

[0070] Each of the five duplexers 32A to 32E may also have, for example, a spacer layer and a cover member. The spacer layer and the cover member are provided on a substrate. When viewed from above in the thickness direction D1 of the mounting substrate 9, the spacer layer surrounds the plurality of IDT electrodes. When viewed from above in the thickness direction D1 of the mounting substrate 9, the spacer layer is frame-shaped (rectangular frame-shaped). The spacer layer has electrical insulation properties. The material of the spacer layer is, for example, a synthetic resin such as epoxy resin or polyimide. The cover member is flat. When viewed from above in the thickness direction D1 of the mounting substrate 9, the cover member is rectangular, but is not limited to this and may be, for example, square. In each of the five duplexers 32A to 32E, when viewed from above in the thickness direction D1 of the mounting substrate 9, the outer dimensions of the cover member, the outer dimensions of the spacer layer, and the outer dimensions of the cover member are substantially the same. The cover member is arranged on the spacer layer so as to face the substrate in the thickness direction D1 of the mounting substrate 9. The cover member overlaps the multiple IDT electrodes in the thickness direction D1 of the mounting substrate 9 and is separated from the multiple IDT electrodes in the thickness direction D1 of the mounting substrate 9. The cover member has electrical insulation properties. The cover member is made of a synthetic resin such as epoxy resin or polyimide. Multiple terminals of each of the five duplexers 32A to 32E are exposed through the cover member.

[0071] Circuit element 131 in output matching circuit 13 is, for example, an inductor. Circuit element 131 in output matching circuit 13 is mounted on first principal surface 91 of mounting substrate 9, for example, but not limited thereto. When viewed from above in thickness direction D1 of mounting substrate 9, circuit element 131 has a rectangular outer periphery.

[0072] The inductor in the input matching circuit is, for example, a chip inductor. The inductor is mounted on, for example, but not limited to, first principal surface 91 of mounting substrate 9. When viewed from above in thickness direction D1 of mounting substrate 9, the outer periphery of the inductor is a quadrilateral.

[0073] The inductor of each of the five matching circuits is, for example, a chip inductor. The inductor of each of the five matching circuits is mounted on, for example, but not limited to, first principal surface 91 of mounting substrate 9. When viewed from above in thickness direction D1 of mounting substrate 9, the outer periphery of the inductor is a quadrilateral.

[0074] Low-pass filter 3 is mounted on first principal surface 91 of mounting substrate 9. Therefore, low-pass filter 3 is disposed on first principal surface 91 of mounting substrate 9. Low-pass filter 3 includes, for example, a plurality of inductors and capacitors. Low-pass filter 3 may also be an IPD (Integrated Passive Device) including a plurality of inductors and capacitors.

[0075] In addition to the plurality of external connection terminals 80, the high-frequency module 1 also includes a plurality of heat dissipation terminals 86. The plurality of external connection terminals 80 and the plurality of heat dissipation terminals 86 are arranged on the second main surface 92 of the mounting substrate 9. The material of the plurality of external connection terminals 80 and the plurality of heat dissipation terminals 86 is, for example, metal (such as copper, copper alloy, etc.). Each terminal in the plurality of external connection terminals 80 and the plurality of heat dissipation terminals 86 is a columnar electrode. Here, the columnar electrode is, for example, a cylindrical electrode. The external connection terminals 80 and the heat dissipation terminals 86 may be of the same shape or different shapes. Figure 1 and Figure 2 In the figure, each heat dissipation terminal 86 is marked with dotted hatching, but the hatching does not represent a cross section, but is only marked to facilitate understanding of the relative positional relationship between each heat dissipation terminal 86 and each external connection terminal 80.

[0076] As described above, the multiple external connection terminals 80 include an antenna terminal 81, a signal input terminal 82, a signal output terminal 83, multiple control terminals 84, and multiple ground terminals 85. As described above, the multiple ground terminals 85 are electrically connected to the ground layer of the mounting substrate 9. This ground layer serves as the circuit ground for the high-frequency module 1, and the multiple circuit elements of the high-frequency module 1 include circuit elements electrically connected to the ground layer. Furthermore, the multiple external connection terminals 80 include, for example, a first power supply terminal Vcc1 and a second power supply terminal Vcc2.

[0077] The high-frequency module 1 further includes a first resin layer 101 (see Figure 3 ), the first resin layer 101 covers a plurality of circuit elements (such as the output stage amplifier 112, the five duplexers 32A to 32E, and the circuit element 131 of the output matching circuit 13) mounted on the first main surface 91 of the mounting substrate 9. The first resin layer 101 contains resin. In addition to resin, the first resin layer 101 may also contain fillers. Figure 1 In the figure, the first resin layer 101 is omitted.

[0078] In addition, the high-frequency module 1 further includes a second resin layer 102 (see Figure 3), the second resin layer 102 covers a portion of each of the plurality of circuit elements (IC chip 10, IC chip 20, first switch 4, etc.), the plurality of external connection terminals 80, and the plurality of heat dissipation terminals 86 mounted on the second main surface 92 of the mounting substrate 9 on the side of the second main surface 92 of the mounting substrate 9. The second resin layer 102 is formed so that the surface of the substrate of each of the IC chip 10, IC chip 20, and first switch 4 on the side opposite to the mounting substrate 9 is exposed. In addition, the second resin layer 102 is formed so that the front end surface of each of the plurality of external connection terminals 80 and the plurality of heat dissipation terminals 86 is exposed. The second resin layer 102 contains resin. In addition to resin, the second resin layer 102 may also contain filler. The material of the second resin layer 102 may be the same material as that of the first resin layer 101, or a different material. In Figure 2 In the figure, the second resin layer 102 is omitted.

[0079] In addition, the high-frequency module 1 further includes a shielding layer. Figures 1 to 3 The shielding layer is not shown in the figure. The shielding layer is made of, for example, metal. The shielding layer covers the main surface 1011 and outer peripheral surface 1013 of the first resin layer 101, the outer peripheral surface 93 of the mounting substrate 9, and the outer peripheral surface 1023 of the second resin layer 102. The shielding layer contacts the ground layer of the mounting substrate 9. This allows the potential of the shielding layer to be equal to that of the ground layer.

[0080] (1.3) Layout of circuit components in high-frequency modules

[0081] Hereinafter, a direction perpendicular to the thickness direction D1 (first direction D1 ) of the mounting substrate 9 and along the long side of the mounting substrate 9 is referred to as a second direction D2 , and a direction perpendicular to both the thickness direction D1 and the second direction D2 is referred to as a third direction D3 .

[0082] As described above, in high-frequency module 1, inter-stage matching circuit 113, output-stage amplifier 112, output matching circuit 13, five duplexers 32A to 32E, and low-pass filter 3 are arranged on first principal surface 91 of mounting substrate 9. Furthermore, in high-frequency module 1, first switch 4, IC chip 10, and IC chip 20 are arranged on second principal surface 92 of mounting substrate 9. Furthermore, in high-frequency module 1, multiple external connection terminals 80 and multiple heat dissipation terminals 86 are arranged on second principal surface 92 of mounting substrate 9.

[0083] In the high-frequency module 1, the plurality of external connection terminals 80 include a first group of external connection terminals 80 arranged along the periphery of the second main surface 92 of the mounting substrate 9, and a second group of external connection terminals 80 arranged on the second main surface 92 of the mounting substrate 9 at a position inner than the first group of external connection terminals 80. The first group of external connection terminals 80 includes a ground terminal 85, an antenna terminal 81, a signal input terminal 82, a signal output terminal 83, a control terminal 84, a first power supply terminal Vcc1, and a second power supply terminal Vcc2. The antenna terminal 81 is arranged near one of the four corners of the second main surface 92 of the mounting substrate 9. The second group of external connection terminals 80 includes a ground terminal 85 and a control terminal 84. When viewed from above in the thickness direction D1 of the mounting substrate 9, the plurality of heat dissipation terminals 86 overlap with the output stage amplifier 112. When viewed from above in the thickness direction D1 of the mounting substrate 9, the plurality of heat dissipation terminals 86 are arranged in a two-dimensional array. The mounting substrate 9 also has a plurality of through electrodes 94 (see Figure 3 The plurality of through-electrodes 94 connect the output stage amplifier 112 to the plurality of heat dissipation terminals 86. The plurality of through-electrodes 94 are formed to extend over the entire length of the mounting substrate 9 in the thickness direction D1. The through-electrodes 94 penetrate the plurality of dielectric layers of the mounting substrate 9 in the thickness direction D1 of the mounting substrate 9.

[0084] First switch 4, connected to antenna terminal 81, is located near antenna terminal 81. When viewed from above in thickness direction D1 of mounting substrate 9, first switch 4 is adjacent to antenna terminal 81 near first corner 95 of first corner 95, second corner 96, third corner 97, and fourth corner 98. First corner 95 and second corner 96 are separated in second direction D2, first corner 95 and third corner 97 are separated in a diagonal direction, and first corner 95 and fourth corner 98 are separated in third direction D3.

[0085] The IC chip 20 is located near the first switch 4 on the second main surface 92 of the mounting substrate 9. The IC chip 20 is separated from the first switch 4 in the third direction D3. In the IC chip 20, the third switch 6 and the low-noise amplifier 21 are arranged in the second direction D2.

[0086] The IC chip 10 is located at a position separated from the first switch 4 and the IC chip 20 in the second direction D2. In the IC chip 10, the driver-stage amplifier 111, the controller 14, and the second switch 5 are arranged in this order in the third direction D3. In the IC chip 10, when viewed from above in the thickness direction D1 of the mounting substrate 9, the driver-stage amplifier 111 is located near the third corner 97, and the second switch 5 is located near the second corner 96. Consequently, the driver-stage amplifier 111 and the first switch 4 are separated in a direction along the aforementioned one diagonal line.

[0087] The second group of external connection terminals 80 is located between the IC chip 10 and the IC chip 20 and the first switch 4 in the second direction D2. The second group of external connection terminals 80 is arranged in the third direction D3.

[0088] When viewed from the thickness direction D1 of the mounting substrate 9, the low-pass filter 3 mounted on the first main surface 91 of the mounting substrate 9 is located near the fourth corner 98. When viewed from the thickness direction D1 of the mounting substrate 9, the low-pass filter 3 overlaps the first switch 4.

[0089] When viewed in plan from the thickness direction D1 of the mounting substrate 9, the circuit element 114 included in the inter-stage matching circuit 113 is located near the third corner 97. When viewed from the thickness direction D1 of the mounting substrate 9, at least a portion of the circuit element 114 overlaps the driver-stage amplifier 111.

[0090] The output stage amplifier 112 is located near the third corner portion 97 when viewed in plan from the thickness direction D1 of the mounting substrate 9. The output stage amplifier 112 is adjacent to the inter-stage matching circuit 113 in the second direction D2.

[0091] When viewed in plan from the thickness direction D1 of the mounting substrate 9, the output matching circuit 13 is located near the second corner portion 96. The output matching circuit 13 is adjacent to the output stage amplifier 112 and the inter-stage matching circuit 113 in the third direction D3.

[0092] When viewed in plan from the thickness direction D1 of the mounting substrate 9 , the five duplexers 32A to 32E are located between the low-pass filter 3 , the output-stage amplifier 112 , and the output matching circuit 13 .

[0093] (2) Manufacturing method of high-frequency module

[0094] In the method for manufacturing the high-frequency module 1, for example, a first step is performed to mount a plurality of circuit elements on a mounting substrate 9. In the first step, a plurality of conductive posts serving as a base for the plurality of external connection terminals 80 and the plurality of heat dissipation terminals 86 are arranged on the second principal surface 92 of the mounting substrate 9.

[0095] After the first step, a second step is performed. In the second step, the following steps are performed: forming a first resin layer 101 covering the plurality of circuit elements on the first principal surface 91 side of the mounting substrate 9; and forming a resin layer serving as a base for the second resin layer 102 covering the plurality of circuit elements and the plurality of conductor posts on the second principal surface 92 side of the mounting substrate 9.

[0096] After the above-described second process, a third process is performed. In the third process, the resin layer and the like formed in the second process are ground from the surface on the side opposite to the mounting substrate 9 side of the resin layer and the like. Here, in the third process, the second resin layer 102 is formed by grinding the resin layer. Further, in the third process, after the surface on the side opposite to the mounting substrate 9 side of the substrate of at least one of the plurality of circuit elements is exposed by grinding the resin layer, grinding is further performed, whereby the substrates of the plurality of circuit elements are thinned. In the third process, the plurality of external connection terminals 80 are formed by grinding the plurality of conductor columns.

[0097] After the above-described third process, a fourth process is performed. A shielding layer is formed in the fourth process. In addition, the first process, the second process, and the third process can also be performed on a multi-chip substrate (Japanese: 多数個取り基板) that includes a plurality of mounting substrates 9 and enables simultaneous processing of multiple mounting substrates 9. In this case, for example, it is only necessary to separate the multi-chip substrate into individual mounting substrates 9 after the third process and then perform the fourth process.

[0098] (3) Summary

[0099] (3.1) High-frequency module

[0100] The high-frequency module 1 according to Embodiment 1 includes a mounting substrate 9, a power amplifier 11, and an electronic component 2. The mounting substrate 9 has a first main surface 91 and a second main surface 92 facing each other. The power amplifier 11 is disposed on the mounting substrate 9. The electronic component 2 is disposed on the mounting substrate 9. The power amplifier 11 has a driver-stage amplifier 111 and an output-stage amplifier 112. The driver-stage amplifier 111 is disposed on the second main surface 92 of the mounting substrate 9. The output-stage amplifier 112 is disposed on the first main surface 91 of the mounting substrate 9. The electronic component 2 is disposed on the first main surface 91 of the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, at least a part of the electronic component 2 overlaps with the driver-stage amplifier 111.

[0101] The high-frequency module 1 according to Embodiment 1 can be miniaturized. In summary, the high-frequency module 1 according to Embodiment 1 can achieve miniaturization of the mounting substrate 9 when viewed from above in the thickness direction D1 of the mounting substrate 9.

[0102] In addition, in the high-frequency module 1 according to Embodiment 1, when viewed from above in the thickness direction D1 of the mounting substrate 9, the output-stage amplifier 112 does not overlap with the driver-stage amplifier 111. Thus, in the high-frequency module 1 according to Embodiment 1, the driver-stage amplifier 111 is not easily affected by the heat from the output-stage amplifier 112. Therefore, the high-frequency module 1 according to Embodiment 1 can suppress the degradation of the characteristics of the driver-stage amplifier 111.

[0103] The high-frequency module 1 according to the first embodiment further includes heat dissipation terminals 86. Heat dissipation terminals 86 are disposed on the second principal surface 92 of the mounting substrate 9. When viewed from above in the thickness direction D1 of the mounting substrate 9, heat dissipation terminals 86 overlap with the output-stage amplifier 112. The mounting substrate 9 further includes a through-electrode 94. Through-electrode 94 connects the output-stage amplifier 112 to the heat dissipation terminals 86. Consequently, the high-frequency module 1 according to the first embodiment facilitates the dissipation of heat generated by the output-stage amplifier 112.

[0104] As a comparative example, a high-frequency module is considered in which, in order to miniaturize the high-frequency module disclosed in Patent Document 1, multiple components are mounted separately on the first and second principal surfaces of the mounting substrate. However, in this comparative example, there is a concern that the characteristics of the circuit components overlapping the IC chip (power amplifier) including the driver-stage amplifier and the output-stage amplifier in the thickness direction of the mounting substrate may be degraded. More specifically, in this comparative example, there is a concern that the characteristics of the circuit components overlapping the power amplifier in the thickness direction of the mounting substrate may be degraded due to the influence of heat from the power amplifier, or that the heat generated in the power amplifier may be difficult to dissipate, resulting in a degraded performance of the power amplifier. In contrast, the high-frequency module 1 according to Embodiment 1 does not include circuit components arranged on the second principal surface 92 of the mounting substrate 9 that overlap the output-stage amplifier 112 when viewed from above in the thickness direction D1 of the mounting substrate 9. Thus, the high-frequency module 1 involved in embodiment 1 can achieve miniaturization while suppressing the degradation of the characteristics of the output-stage amplifier 112 arranged on the first main surface 91 of the mounting substrate 9 and the circuit structural components arranged on the second main surface 92 of the mounting substrate 9 (in the high-frequency module 1 of embodiment 1, the IC chip 10, the IC chip 20 and the first switch 4).

[0105] Furthermore, in the high-frequency module 1 according to the first embodiment, the electronic component 2 is a circuit element 114. The circuit element 114 is included in the inter-stage matching circuit 113. The inter-stage matching circuit 113 is connected between the driver-stage amplifier 111 and the output-stage amplifier 112. In the high-frequency module 1 according to the first embodiment, since the electronic component 2 is the circuit element 114 included in the inter-stage matching circuit 113, the wiring length between the driver-stage amplifier 111 and the inter-stage matching circuit 113 can be shortened.

[0106] Furthermore, in the high-frequency module 1 according to the first embodiment, the inter-stage matching circuit 113 can be formed using a chip inductor or a conductor portion of the mounting substrate 9 that is independent of the driver-stage amplifier 111 and the output-stage amplifier 112. Consequently, in the high-frequency module 1 according to the first embodiment, the performance of the inter-stage matching circuit 113 can be improved, and the performance of the power amplifier 11 can be improved, compared to a case where the high-frequency module 1 according to the first embodiment includes a single-chip power amplifier including the driver-stage amplifier, the output-stage amplifier, and the inter-stage matching circuit. The performance of the power amplifier 11 includes efficiency and gain. In the high-frequency module 1 according to the first embodiment, the isolation of the power amplifier 11 can be improved, the bouncing of the transmission signal within the power amplifier 11 can be suppressed, and the operation of the power amplifier 11 can be stabilized, compared to a case where the high-frequency module 1 according to the first embodiment includes a single-chip power amplifier including the driver-stage amplifier, the output-stage amplifier, and the inter-stage matching circuit.

[0107] (3.2) Communication device

[0108] Communication device 300 according to Embodiment 1 includes high-frequency module 1 and signal processing circuit 301 . Signal processing circuit 301 processes a transmission signal. High-frequency module 1 amplifies and outputs the transmission signal from signal processing circuit 301 . High-frequency module 1 transmits the transmission signal between antenna 310 and signal processing circuit 301 .

[0109] The communication device 300 according to Embodiment 1 includes the high-frequency module 1, thereby enabling miniaturization. The multiple electronic components constituting the signal processing circuit 301 may be mounted on, for example, the aforementioned circuit substrate, or on a circuit substrate (a second circuit substrate) different from the circuit substrate (a first circuit substrate) on which the high-frequency module 1 is mounted.

[0110] (4) Modification of high-frequency module

[0111] Reference Figure 5 A high-frequency module 1a according to a modified example of Embodiment 1 will be described. Regarding the high-frequency module 1a according to the modified example, components identical to those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0112] The high-frequency module 1a according to the modification differs from the high-frequency module 1 according to the first embodiment in that the plurality of external connection terminals 80 and the plurality of heat dissipation terminals 86 are ball bumps. Furthermore, the high-frequency module 1a according to the modification differs from the high-frequency module 1 according to the first embodiment in that the second resin layer 102 of the high-frequency module 1 according to the first embodiment is not included. The high-frequency module 1a according to the modification may also include an underfill portion provided in the gaps between the IC chip 10, the IC chip 20, the first switch 4, and the second principal surface 92 of the mounting substrate 9.

[0113] The material constituting the ball bumps of each of the plurality of external connection terminals 80 and the plurality of heat dissipation terminals 86 is, for example, gold, copper, solder, or the like.

[0114] The plurality of external connection terminals 80 may be a mixture of ball bumps and columnar electrodes. The plurality of heat dissipation terminals 86 may be a mixture of ball bumps and columnar electrodes.

[0115] (Implementation Method 2)

[0116] Reference Figures 6 to 8 A high-frequency module 1b according to Embodiment 2 will be described. Components of the high-frequency module 1b according to Embodiment 2 that are identical to those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals, and their description will be omitted.

[0117] The high-frequency module 1b according to the second embodiment differs from the high-frequency module 1 according to the first embodiment in that the controller 14 is a single-chip IC chip mounted on the first principal surface 91 of the mounting substrate 9. In the high-frequency module 1b according to the second embodiment, the electronic component 2, which is arranged on the first principal surface 91 of the mounting substrate 9 and at least partially overlaps the driver-stage amplifier 111 when viewed from above in the thickness direction D1 of the mounting substrate 9, includes the controller 14. Furthermore, the high-frequency module 1b according to the second embodiment differs from the high-frequency module 1 according to the first embodiment in that an IC chip 10a is included in place of the IC chip 10 of the high-frequency module 1 according to the first embodiment. IC chip 10a is a single-chip IC chip that includes the driver-stage amplifier 111 and the second switch 5. Like IC chip 10, IC chip 10a is mounted on the second principal surface 92 of the mounting substrate 9.

[0118] Similar to the high-frequency module 1 according to the first embodiment, the high-frequency module 1 b according to the second embodiment includes the electronic component 2 arranged on the first principal surface 91 of the mounting substrate 9 and at least partially overlapping the driver-stage amplifier 111 when viewed in plan from the thickness direction D1 of the mounting substrate 9 , thereby achieving miniaturization.

[0119] In the high-frequency module 1b according to the second embodiment, the electronic component 2 includes the controller 14 that controls the power amplifier 11. Therefore, in the high-frequency module 1b according to the second embodiment, the wiring length between the output-stage amplifier 112 and the controller 14 can be shortened.

[0120] (Implementation 3)

[0121] Reference Figures 9 to 11A high-frequency module 1c according to Embodiment 3 will be described. In the high-frequency module 1c according to Embodiment 3, the same components as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals, and description thereof will be omitted.

[0122] The high-frequency module 1c according to the third embodiment differs from the high-frequency module 1 according to the first embodiment in that, when viewed from above in the thickness direction D1 of the mounting substrate 9, the output matching circuit 13 overlaps with the driver-stage amplifier 111. In the high-frequency module 1c according to the third embodiment, the position of the output matching circuit 13 is reversed with the position of the inter-stage matching circuit 113.

[0123] In the high-frequency module 1 c according to the third embodiment, the electronic component 2 disposed on the first principal surface 91 of the mounting substrate 9 and at least partially overlapping the driver-stage amplifier 111 when viewed in the thickness direction D1 of the mounting substrate 9 includes the circuit element 131 of the output matching circuit 13 .

[0124] The high-frequency module 1c according to the third embodiment, like the high-frequency module 1 according to the first embodiment, includes the electronic component 2 arranged on the first principal surface 91 of the mounting substrate 9 and at least partially overlapping the driver-stage amplifier 111 when viewed from above in the thickness direction D1 of the mounting substrate 9, thereby enabling miniaturization.

[0125] In the high-frequency module 1c according to the third embodiment, the electronic component 2 includes the circuit element 131 of the output matching circuit 13. Thus, in the high-frequency module 1c according to the third embodiment, the wiring length between the output-stage amplifier 112 and the output matching circuit 13 can be shortened.

[0126] (Other Modifications)

[0127] The above-mentioned embodiments 1 to 3 are merely one of various embodiments of the present invention. The above-mentioned embodiment can be modified in various ways according to design etc. as long as the object of the present invention can be achieved.

[0128] For example, the mounting substrate 9 may be a component-embedded substrate.

[0129] Furthermore, in high-frequency modules 1, 1a, 1b, and 1c, output-stage amplifier 112 is mounted on first principal surface 91 of mounting substrate 9, and driver-stage amplifier 111 is mounted on second principal surface 92 of mounting substrate 9. However, this is not limiting. For example, output-stage amplifier 112 may be mounted on second principal surface 92 of mounting substrate 9, and driver-stage amplifier 111 may be mounted on first principal surface 91 of mounting substrate 9.

[0130] Alternatively, the output stage amplifier 112 may be mounted on the first principal surface 91 of the mounting substrate 9 using bonding wires, instead of being flip-chip mounted on the first principal surface 91 of the mounting substrate 9. Specifically, the output stage amplifier 112 may be bonded to the first principal surface 91 of the mounting substrate 9 using a die bonding material so as to be arranged on the first principal surface 91 of the mounting substrate 9 (mechanically connected), and the terminals (pad electrodes) of the output stage amplifier 112 may be electrically connected to the conductor portion of the conductor pattern layer on the first principal surface 91 side of the mounting substrate 9 via bonding wires.

[0131] In the high-frequency modules 1 , 1 b , and 1 c , the second resin layer 102 may cover the surfaces of the IC chip 10 , the IC chip 20 , and the first switch 4 on the side opposite to the mounting substrate 9 .

[0132] The number of selection terminals of each of the first switch 4 , the second switch 5 , and the third switch 6 may be plural and is not limited to the number shown in the example.

[0133] In the high-frequency modules 1 , 1 a , 1 b , and 1 c , the first switch 4 and the IC chip 20 are separate IC chips. However, the present invention is not limited thereto. The first switch 4 , the third switch 6 , and the low-noise amplifier 21 may be integrated into a single chip.

[0134] Each of the first switch 4 and the second switch 5 may be controlled by, for example, a control signal from the RF signal processing circuit 302 of the signal processing circuit 301 instead of being controlled by the controller 14 .

[0135] The substrate of the output stage amplifier 112 is not limited to a gallium arsenide substrate, and may be a silicon substrate, for example. In this case, the transistors included in the output stage amplifier 112 are bipolar transistors instead of HBTs.

[0136] In addition, the substrate of the driver stage amplifier 111 is not limited to a silicon substrate, and may be, for example, a gallium arsenide substrate.

[0137] Alternatively, the high-frequency modules 1, 1a, 1b, and 1c may include multiple transmission filters 12A to 12E and multiple reception filters 22A to 22E, instead of the multiple duplexers 32A to 32E. Furthermore, at least one of the multiple duplexers 32A to 32D may be a filter used for communications supporting TDD (Time Division Duplex). Alternatively, the high-frequency modules 1, 1a, 1b, and 1c may include only the transmission signal path Tx1, of the transmission signal path Tx1 and the reception signal path Rx1. In this case, the high-frequency modules 1, 1a, 1b, and 1c may include, for example, multiple transmission filters 12A to 12E, instead of the multiple duplexers 32A to 32E.

[0138] Furthermore, the above-mentioned filter is an elastic wave filter utilizing surface acoustic waves, but the present invention is not limited thereto, and for example, an elastic wave filter utilizing boundary acoustic waves, plate waves, or the like may also be used.

[0139] In the elastic wave filter, the plurality of series-arm resonators and the plurality of parallel-arm resonators are not limited to SAW resonators, and may each be, for example, a BAW (Bulk Acoustic Wave) resonator.

[0140] Alternatively, the filter can be an LC filter. Compared to an LC filter, an elastic wave filter can improve the attenuation characteristics near the passband. Furthermore, compared to an LC filter, an elastic wave filter can increase Γ (reflection coefficient) in the mid-frequency band.

[0141] Output matching circuit 13 may also be, for example, a single-chip IC chip comprising a substrate and an IC portion, the IC portion including multiple inductors and multiple capacitors formed on the substrate. In this case, the IC chip may also be an IPD. The substrate may be, for example, a silicon substrate. In the case of an IPD, output matching circuit 13 is mounted on first principal surface 91 of mounting substrate 9, for example, using a flip-chip mounting method.

[0142] In the high-frequency modules 1 , 1 b , and 1 c , the tip end portion of each of the plurality of external connection terminals 80 and the plurality of heat dissipation terminals 86 may include, for example, a gold plating layer.

[0143] The circuit structure of the high frequency modules 1, 1a, 1b, and 1c is not limited to Figure 4 Furthermore, the high-frequency modules 1 to 1 c may include, for example, a high-frequency front-end circuit supporting MIMO (Multi Input Multi Output) as a circuit configuration.

[0144] The high-frequency modules 1, 1a, 1b, and 1c may include a multiplexer (a duplexer, a triplexer, etc.) instead of the low-pass filter 3. The multiplexer includes, for example, at least two of a low-pass filter, a band-pass filter, and a high-pass filter.

[0145] Furthermore, the communication device 300 according to the first embodiment may include any one of the high-frequency modules 1 a , 1 b , and 1 c instead of the high-frequency module 1 .

[0146] (Way)

[0147] This specification discloses the following aspects.

[0148] The high-frequency module (1; 1a; 1b; 1c) involved in the first embodiment includes a mounting substrate (9), a power amplifier (11), and an electronic component (2). The mounting substrate (9) has a first main surface (91) and a second main surface (92) facing each other. The power amplifier (11) is arranged on the mounting substrate (9). The electronic component (2) is arranged on the mounting substrate (9). The power amplifier (11) has a driver-stage amplifier (111) and an output-stage amplifier (112). The driver-stage amplifier (111) is arranged on the second main surface (92) of the mounting substrate (9). The output-stage amplifier (112) is arranged on the first main surface (91) of the mounting substrate (9). The electronic component (2) is arranged on the first main surface (91) of the mounting substrate (9). When viewed from above in the thickness direction (D1) of the mounting substrate (9), at least a portion of the electronic component (2) overlaps with the driver-stage amplifier (111).

[0149] In the high-frequency module (1; 1a; 1b; 1c) according to the first aspect, miniaturization can be achieved.

[0150] According to the first embodiment, in the high-frequency module (1; 1a; 1b; 1c) involved in the second embodiment, when viewed from the thickness direction (D1) of the mounting substrate (9), the output stage amplifier (112) and the driver stage amplifier (111) do not overlap.

[0151] In the high-frequency module (1; 1a; 1b; 1c) according to the second embodiment, the driver-stage amplifier (111) is less susceptible to heat from the output-stage amplifier (112).

[0152] According to the first embodiment or the second embodiment, the high-frequency module (1; 1a; 1b; 1c) involved in the third embodiment further includes a heat dissipation terminal (86). The heat dissipation terminal (86) is arranged on the second main surface (92) of the mounting substrate (9). When viewed from above in the thickness direction (D1) of the mounting substrate (9), the heat dissipation terminal (86) overlaps with the output stage amplifier (112). The mounting substrate (9) further includes a through electrode (94). The through electrode (94) connects the output stage amplifier (112) and the heat dissipation terminal (86).

[0153] The high-frequency module (1; 1a; 1b; 1c) according to the third aspect easily dissipates heat generated in the output-stage amplifier (112).

[0154] According to the third embodiment, in the high-frequency module (1; 1a; 1b; 1c) involved in the fourth embodiment, there is no circuit structural component arranged on the second main surface (92) of the mounting substrate (9) and overlapping with the output stage amplifier (112) when viewed from above in the thickness direction (D1) of the mounting substrate (9).

[0155] In the high-frequency module (1; 1a; 1b; 1c) according to the fourth embodiment, miniaturization is achieved while suppressing degradation of characteristics of circuit components arranged on the second main surface (92) of the mounting substrate (9).

[0156] According to any one of the first to fourth aspects, in the high-frequency module (1; 1a) of the fifth aspect, the electronic component (2) is a circuit element (114). The circuit element (114) is included in an inter-stage matching circuit (113). The inter-stage matching circuit (113) is connected between a driver-stage amplifier (111) and an output-stage amplifier (112).

[0157] In the high-frequency module (1; 1a) according to the fifth aspect, the wiring length between the driver-stage amplifier (111) and the inter-stage matching circuit (113) can be shortened.

[0158] In the high-frequency module (1; 1a) according to the sixth aspect according to the fifth aspect, the circuit element (114) is an inductor.

[0159] In the high-frequency module (1; 1a) according to the sixth aspect, the loss in the inter-stage matching circuit (113) can be reduced.

[0160] In the high-frequency module (1b) according to a seventh aspect, the electronic component (2) is a controller (14) that controls the power amplifier (11).

[0161] In the high-frequency module (1b) according to the seventh aspect, the wiring length between the output-stage amplifier (112) and the controller (14) can be shortened.

[0162] According to any one of the first to fifth aspects, the high-frequency module (1c) involved in the eighth aspect further includes a plurality of transmission filters (12A to 12E) and a switch (5). The passbands of the plurality of transmission filters (12A to 12E) are different from each other. The switch (5) has a common terminal (50) and a plurality of selection terminals (51 to 55). The common terminal (50) is connected to the output stage amplifier (112). The plurality of selection terminals (51 to 55) are connected to the plurality of transmission filters (12A to 12E) in a one-to-one manner. The electronic component (2) is a circuit element (131) included in an output matching circuit (13) provided on a signal path (Tx1) for transmitting a signal, between the output stage amplifier (112) and the common terminal (50) of the switch (5).

[0163] In the high-frequency module (1c) according to the eighth aspect, the wiring length between the matching circuit (13) and the output-stage amplifier (112) can be shortened.

[0164] According to the eighth aspect, in the high-frequency module (1c) according to the ninth aspect, the circuit element (131) is an inductor.

[0165] In the high-frequency module (1c) involved in the ninth aspect, miniaturization can be achieved.

[0166] According to any one of the fifth to ninth aspects, in the high-frequency module (1; 1a; 1b; 1c) involved in the tenth aspect, the electronic component (2) is adjacent to the output stage amplifier (112) when viewed from above in the thickness direction (D1) of the mounting substrate (9).

[0167] In the high-frequency module (1; 1a; 1b; 1c) according to the tenth aspect, the wiring length between the electronic component (2) and the output-stage amplifier (112) can be shortened.

[0168] According to any one of the first to fifth aspects, the high-frequency module (1; 1a; 1c) involved in the eleventh aspect further includes a controller (14), a plurality of transmission filters (12A to 12E), and a switch (5). The controller (14) controls the power amplifier (11). The passbands of the plurality of transmission filters (12A to 12E) are different from each other. The switch (5) has a common terminal (50) and a plurality of selection terminals (51 to 55). The common terminal (50) is connected to the output stage amplifier (112). The plurality of selection terminals (51 to 55) are connected to the plurality of transmission filters (12A to 12E) in a one-to-one manner. In the high-frequency module (1; 1a; 1b; 1c), the driver stage amplifier (111), the controller (14), and the switch (5) are included in one semiconductor chip (IC chip 10).

[0169] In the high-frequency module (1; 1a; 1c) involved in the eleventh embodiment, further miniaturization can be achieved, and the driver-stage amplifier (111) can be controlled more stably by using the controller (14).

[0170] According to any one of the first to eleventh aspects, the high-frequency module (1; 1a; 1b; 1c) of the twelfth aspect further comprises an IC chip (20). The IC chip (20) is disposed on the second main surface (92) of the mounting substrate (9). The IC chip (20) includes a low-noise amplifier (21). In the high-frequency module (1; 1a; 1b; 1c) of the twelfth aspect, when viewed from above in the thickness direction (D1) of the mounting substrate (9), the output stage amplifier (112) and the IC chip (20) do not overlap.

[0171] In the high-frequency module (1; 1a; 1b; 1c) according to the twelfth embodiment, the isolation between the output-stage amplifier (112) and the IC chip (20) including the low-noise amplifier (21) can be improved.

[0172] According to the twelfth embodiment, the high-frequency module (1; 1a; 1b; 1c) involved in the thirteenth embodiment further includes a plurality of external connection terminals (80). The plurality of external connection terminals (80) are arranged on the second main surface (92) of the mounting substrate (9). The plurality of external connection terminals (80) include a ground terminal (85). When viewed from above in the thickness direction (D1) of the mounting substrate (9), the ground terminal (85) is located between the driver-stage amplifier (111) and the IC chip (20).

[0173] In the high-frequency module (1; 1a; 1b; 1c) according to the thirteenth embodiment, the isolation between the driver-stage amplifier (111) and the IC chip (20) including the low-noise amplifier (21) can be improved.

[0174] According to the seventh embodiment or the eleventh embodiment, the high-frequency module (1; 1a; 1b; 1c) involved in the fourteenth embodiment further includes an IC chip (20) and a plurality of external connection terminals (80). The IC chip (20) is arranged on the second main surface (92) of the mounting substrate (9). The IC chip (20) includes a low-noise amplifier (21). The plurality of external connection terminals (80) are arranged on the second main surface (92) of the mounting substrate (9). In the high-frequency module (1; 1a; 1b; 1c), when viewed from above in the thickness direction (D1) of the mounting substrate (9), the output stage amplifier (112) and the IC chip (20) do not overlap. The plurality of external connection terminals (80) include a control terminal (84). When viewed from above in the thickness direction (D1) of the mounting substrate (9), the control terminal (84) is located between the driver stage amplifier (111) and the IC chip (20). The controller (14) controls the power amplifier (11) based on a control signal obtained from the control terminal (84).

[0175] In the high-frequency module (1; 1a; 1b; 1c) according to the fourteenth embodiment, the isolation between the driver-stage amplifier (111) and the IC chip (20) including the low-noise amplifier (21) can be improved.

[0176] According to any one of the first to fourteenth aspects, in the high-frequency module (1; 1a; 1b; 1c) of the fifteenth aspect, the power amplifier (11) performs envelope tracking operation.

[0177] In the high-frequency module (1; 1a; 1b; 1c) according to the fifteenth aspect, the operation of the power amplifier (11) performing envelope tracking operation can be made more stable.

[0178] A communication device (300) according to a sixteenth embodiment includes a signal processing circuit (301) and a high-frequency module (1; 1a; 1b; 1c) according to any one of the first to fifteenth embodiments. A power amplifier (11) of the high-frequency module (1; 1a; 1b; 1c) amplifies a transmission signal from the signal processing circuit (301) and outputs the amplified signal.

[0179] In the communication device (300) involved in the sixteenth embodiment, miniaturization can be achieved.

[0180] Description of Reference Numerals

[0181] 1, 1a, 1b, 1c: high-frequency module; 2: electronic component; 3: low-pass filter; 4: switch (first switch); 40: common terminal; 41-45: selection terminals; 5: switch (second switch); 50: common terminal; 51-55: selection terminals; 6: switch (third switch); 60: common terminal; 61-65: selection terminals; 10: IC chip (semiconductor chip); 10a: IC chip; 11: power amplifier; 11 1: Driver-stage amplifier; 112: Output-stage amplifier; 113: Inter-stage matching circuit; 114: Circuit element (inductor); 12A, 12B, 12C, 12D, 12E: Transmitter filter; 13: Output matching circuit; 131: Circuit element (inductor); 14: Controller; 148: Terminal; 20: IC chip; 21: Low-noise amplifier; 22A, 22B, 22C, 22D, 22E: Receiver filter; 3 2A, 32B, 32C, 32D, 32E: duplexer; 80: external connection terminal; 81: antenna terminal; 82: signal input terminal; 83: signal output terminal; 84: control terminal; 85: ground terminal; 86: heat dissipation terminal; 9: mounting substrate; 91: first main surface; 92: second main surface; 93: outer peripheral surface; 94: through-electrode; 95: first corner; 96: second corner; 97: third corner; 98: fourth corner; 1 01: First resin layer; 1011: Main surface; 1013: Peripheral surface; 102: Second resin layer; 1021: Main surface; 1023: Peripheral surface; 300: Communication device; 301: Signal processing circuit; 302: RF signal processing circuit; 303: Baseband signal processing circuit; 310: Antenna; D1: Thickness direction; Tx1: Signal path; Rx1: Signal path; Vcc1: First power terminal; Vcc2: Second power terminal.

Claims

1. A high-frequency module comprising: a mounting substrate having a first main surface and a second main surface facing each other; a power amplifier disposed on the mounting substrate; and an electronic component arranged on the mounting substrate, in, The power amplifier comprises a driver stage amplifier and an output stage amplifier, The driver stage amplifier is arranged on the second main surface of the mounting substrate. The output stage amplifier is arranged on the first main surface of the mounting substrate. The electronic component is arranged on the first main surface of the mounting substrate, and at least a portion of the electronic component overlaps with the driver-stage amplifier when viewed in plan from the thickness direction of the mounting substrate.

2. The high-frequency module according to claim 1, wherein The output-stage amplifier and the driver-stage amplifier do not overlap when viewed in plan from the thickness direction of the mounting substrate.

3. The high-frequency module according to claim 1 or 2, characterized in that: The device further comprises a heat dissipation terminal, the heat dissipation terminal being arranged on the second main surface of the mounting substrate and overlapping with the output stage amplifier when viewed from above in the thickness direction of the mounting substrate. The mounting substrate further includes a through-electrode connecting the output-stage amplifier and the heat dissipation terminal.

4. The high-frequency module according to claim 3, wherein: There is no circuit component that is arranged on the second main surface of the mounting substrate and overlaps with the output stage amplifier when viewed in plan from the thickness direction of the mounting substrate.

5. The high-frequency module according to claim 1 or 2, characterized in that: The electronic component is a circuit element included in an inter-stage matching circuit connected between the driver-stage amplifier and the output-stage amplifier.

6. The high-frequency module according to claim 5, wherein: The circuit element is an inductor.

7. The high-frequency module according to claim 1 or 2, characterized in that: The electronic component is a controller that controls the power amplifier.

8. The high-frequency module according to claim 1 or 2, characterized in that: Also features: a plurality of transmission filters, the plurality of transmission filters having passbands different from each other; and a switch having a common terminal connected to the output stage amplifier and a plurality of selection terminals connected to the plurality of transmission filters in a one-to-one manner, The electronic component is a circuit element included in an output matching circuit provided between the output stage amplifier and the common terminal of the switch on a signal path for a transmission signal.

9. The high-frequency module according to claim 8, characterized in that The circuit element is an inductor.

10. The high-frequency module according to claim 5, wherein: The electronic component is adjacent to the output stage amplifier when viewed in plan from the thickness direction of the mounting substrate.

11. The high-frequency module according to claim 1 or 2, characterized in that: Also features: a controller that controls the power amplifier; a plurality of filters, the passbands of the plurality of filters being different from each other; and a switch having a common terminal connected to the output stage amplifier and a plurality of selection terminals connected to the plurality of filters in a one-to-one manner, The driver stage amplifier, the controller, and the switch are included in one semiconductor chip.

12. The high-frequency module according to claim 1 or 2, characterized in that: The device further comprises an IC chip, the IC chip being arranged on the second main surface of the mounting substrate, the IC chip including a low noise amplifier. The output stage amplifier and the IC chip do not overlap when viewed in plan from the thickness direction of the mounting substrate.

13. The high-frequency module according to claim 12, wherein: further comprising a plurality of external connection terminals, the plurality of external connection terminals being arranged on the second main surface of the mounting substrate, The plurality of external connection terminals include a ground terminal located between the driver stage amplifier and the IC chip when viewed in plan from a thickness direction of the mounting substrate.

14. The high-frequency module according to claim 7, wherein: Also features: an IC chip disposed on the second main surface of the mounting substrate, the IC chip including a low-noise amplifier; and a plurality of external connection terminals, the plurality of external connection terminals being arranged on the second main surface of the mounting substrate, When viewed from above in the thickness direction of the mounting substrate, the output stage amplifier and the IC chip do not overlap. The plurality of external connection terminals include a control terminal, and when viewed from above in the thickness direction of the mounting substrate, the control terminal is located between the driver stage amplifier and the IC chip. The controller controls the power amplifier based on a control signal acquired from the control terminal.

15. The high-frequency module according to claim 11, wherein: Also features: an IC chip disposed on the second main surface of the mounting substrate, the IC chip including a low-noise amplifier; and a plurality of external connection terminals, the plurality of external connection terminals being arranged on the second main surface of the mounting substrate, When viewed from above in the thickness direction of the mounting substrate, the output stage amplifier and the IC chip do not overlap. The plurality of external connection terminals include a control terminal, and when viewed from above in the thickness direction of the mounting substrate, the control terminal is located between the driver stage amplifier and the IC chip. The controller controls the power amplifier based on a control signal acquired from the control terminal.

16. The high-frequency module according to claim 1 or 2, characterized in that: The power amplifier performs envelope tracking operation.

17. A communication device comprising: signal processing circuitry; and The high-frequency module according to any one of claims 1 to 16, in, The power amplifier of the high-frequency module amplifies the transmission signal from the signal processing circuit and outputs the amplified signal.

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