Compound semiconductor radio frequency power test system and method based on EMMI system

Abstract

The invention discloses a compound semiconductor radio frequency power test system and method based on an EMMI system, comprising a signal source, a coupler, an isolator, a load regulator and an EMMI platform; firstly, the EMMI platform is used to collect the background light signal of the device when it is not powered on and when no microwave excitation signal is applied; then, the device is powered on so that the device is in a conducting or pinch-off working state, and according to the working state of the device, the signal source is adjusted to provide the device with a microwave excitation signal, and the standing wave ratio and phase of the microwave signal at the radio frequency output end are adjusted through the load regulator, so as to change the optical signal of the device in the powered working state, and the EMMI platform is used to collect the optical signal of the device in real time at this time, and the EMMI platform generates a radio frequency EMMI distribution diagram of the device in the working state according to the background light signal and the collected optical signal of the device in the working state. The invention can obtain the power distribution of compound semiconductor devices in different radio frequency working environments.

Description

Technical Field

[0001] The invention belongs to the technical field of compound power semiconductors. Background Art

[0002] Wide bandgap compound semiconductor materials have the characteristics of large bandgap width, high breakdown voltage, fast electron drift velocity and strong radiation resistance. The devices have the characteristics of high temperature resistance, high voltage resistance, good high frequency and high power.

[0003] In semiconductor devices, due to the effect of an external electric field, electrons undergo a transition process from a high energy state to a low energy state. Figure 1 The transition process is accompanied by a luminescence process, including the electron-hole pair recombination luminescence caused by the inter-band transition between the conduction band and the valence band, and the field-accelerated carrier relaxation luminescence caused by the intra-band transition. The luminescence intensity is related to the external electric field strength.

[0004] The Emission Microscope (EMMI) platform is a tool with high-resolution microscopic positioning analysis, which mainly detects the photons emitted inside the IC. The EMMI platform is often combined with the DC working state of the device to collect the optical signal of the device in the DC working state, and the EMMI distribution map is generated through platform processing. However, for compound semiconductor devices, they usually work in the RF state. Since the RF signal has time domain and frequency domain characteristics, the RF state of different microscopic areas of the device is different. In particular, when the device is in a mismatched state, the device will show significantly different power distribution differences with different RF signals. The existing technology cannot characterize this difference. Summary of the invention

[0005] Purpose of the invention: In order to solve the problems existing in the above-mentioned prior art, the present invention provides a compound semiconductor radio frequency power testing system and method based on the EMMI system.

[0006] The technical solution of the present invention: The present invention provides a compound semiconductor radio frequency power test system based on the EMMI system, comprising a signal source, a coupler, an isolator, a load regulator and an EMMI platform; the signal source is connected to the radio frequency input end of the compound semiconductor device through the coupler and the isolator, and the radio frequency output end of the compound semiconductor device is connected to the load regulator;

[0007] First, an EMMI platform is used to collect background light signals of a compound semiconductor device when no power is supplied and no microwave excitation signal is supplied; then, the compound semiconductor device is powered on so that the compound semiconductor device is in an on or off working state, and according to the working state of the compound semiconductor device, a signal source is adjusted to provide a microwave excitation signal to the compound semiconductor device, and a standing wave ratio and a phase of the microwave signal at the radio frequency output end of the compound semiconductor device are adjusted through a load regulator, thereby changing the light signal of the compound semiconductor device, and an EMMI platform is used to collect the light signal of the compound semiconductor device in real time, and the EMMI platform generates a radio frequency EMMI distribution diagram of the compound semiconductor device in the working state according to the background light signal and the collected light signal of the compound semiconductor device in the working state for reference by analysts.

[0008] Furthermore, the system also includes a first attenuator, a second attenuator, a first power meter and a second power meter; the coupler is connected to the first power meter through the first attenuator; the load regulator is connected to the second power meter through the second attenuator; the first attenuator attenuates the microwave excitation signal input from the signal source to the compound semiconductor device to a range that can be monitored by the first power meter, the load regulator transmits the signal output from the RF output end of the compound semiconductor device to the second attenuator, and the second attenuator attenuates the signal to a range that can be monitored by the second power meter; and whether the working state of the semiconductor compound is normal is judged based on the difference between the monitoring values ​​of the first power meter and the second power meter.

[0009] Furthermore, when the compound semiconductor device is powered on, the source is grounded, and the gate and drain of the compound semiconductor device are connected to a DC power supply, so that the compound semiconductor device is in a conducting working state or a pinched-off working state.

[0010] Furthermore, the material of the compound semiconductor device is indium phosphide, gallium arsenide, gallium nitride, silicon carbide or gallium oxide.

[0011] Furthermore, the compound semiconductor device type is MOSFET, MISFET, MESFET, HFET, PHEMT, HEMT, SBD or HBT.

[0012] The compound semiconductor radio frequency power test method based on the EMMI system specifically includes the following steps:

[0013] Step 1: Use the EMMI platform to collect the background light signal of the compound semiconductor device when no power is applied and no microwave excitation signal is applied;

[0014] Step 2: Powering up the compound semiconductor device so that the compound semiconductor device is in a working state;

[0015] Step 3: adjusting the microwave excitation signal input to the compound semiconductor device according to the working state of the compound semiconductor device;

[0016] Step 4: adjusting the standing wave ratio and phase of the microwave signal at the radio frequency output end of the compound semiconductor device, thereby changing the optical signal of the compound semiconductor device;

[0017] Step 5: Use the EMMI platform to collect different optical signals of the compound semiconductor device in the working state in real time. The EMMI platform removes the background optical signal from the collected optical signal, and then the EMMI platform generates a radio frequency EMMI distribution map of the compound semiconductor device in the working state according to the collected optical signal.

[0018] Beneficial effects: The present invention combines the microwave working state of the device with the principle of electroluminescence to construct the power distribution of compound semiconductor devices under different RF working environments, making it easier for staff to grasp the mechanism of device EMMI distribution changing with the working environment. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 Schematic diagram of semiconductor energy level transition.

[0020] Figure 2 System structure diagram of the present invention.

[0021] Figure 3 The figure is a radio frequency power distribution diagram of a part of a compound semiconductor device using the method of the present invention. DETAILED DESCRIPTION

[0022] The accompanying drawings, which constitute a part of the present invention, are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute improper limitations on the present invention.

[0023] like Figure 2 As shown, this embodiment provides a compound semiconductor RF power test system based on the EMMI system, which includes: a signal source, a coupler, an isolator, a load regulator, a gate power supply, a drain power supply, and an EMMI general platform, and all hardware has a good common ground; in this embodiment, the signal source adopts E8257D, the coupler adopts 87031E, the isolator adopts TBG301A1, and the load regulator adopts MMT-1808.

[0024] The material of the compound semiconductor device may be indium phosphide, gallium arsenide, gallium nitride, silicon carbide or gallium oxide. The compound semiconductor device type may be MOSFET, MISFET, MESFET, HFET, PHEMT, HEMT, SBD or HBT. In this embodiment, the compound semiconductor device uses GaN HEMT.

[0025] The source of the device is grounded, and the gate and drain are respectively connected to a DC power supply to provide a DC excitation signal for the device. In this embodiment, the gate voltage Vg is -2.9V, the drain voltage Vd is 50V, and the leakage current Id is 10mA.

[0026] The signal source is connected to the radio frequency input end of the coupler, the isolator, and the compound semiconductor device (hereinafter referred to as the device) in sequence by means of a coaxial line, and the signal source provides a microwave excitation signal to the device;

[0027] The device is connected to the load regulator via a coaxial line;

[0028] The load regulator can adjust the standing wave ratio and phase of the device's RF output port, thereby adjusting the device's optical signal;

[0029] The device is placed on the EMMI universal platform, and the EMMI platform processes the photoluminescence signal of the device working at radio frequency to form the device radio frequency EMMI distribution map.

[0030] This embodiment also includes a first attenuator, a second attenuator, a first power meter and a second power meter; the coupler is connected to the first attenuator and the first power meter in sequence by a coaxial line to monitor the microwave input signal.

[0031] The first and second attenuators are used to attenuate excessive microwave signals to an intensity that can be monitored by the corresponding power meter, so as to prevent the power meter from burning out due to excessive monitored power signals.

[0032] The load regulator transmits the signal outputted from the radio frequency output terminal of the compound semiconductor device to the second attenuator, and the second attenuator attenuates the signal to a range that can be monitored by the second power meter.

[0033] In this embodiment, the load regulator has an operating frequency of DC to 12 GHz, a standing wave ratio of 1:1 to 100:1, and a phase of 0 O ~360 O .

[0034] A compound semiconductor device radio frequency EMMI system and test method, the method comprising the following steps:

[0035] a. The system is precisely calibrated and has good common ground;

[0036] b. The EMMI universal platform collects the background light signal when the device is not powered on, forming the original image of the device without signal excitation;

[0037] c. The source of the device is grounded, the gate and the drain are powered by a DC power supply in turn, the device works in the on state or the pinch-off state, and the working state of the device matches the microwave signal (that is, the microwave excitation signal emitted by the signal source is adjusted accordingly according to the working state of the device); in this embodiment, the signal source parameters set the frequency f to 5 GHz, the input power Pin to 41.2 dBm, and the continuous wave working mode;

[0038] d. Set the parameters of the signal source and turn on the microwave signal;

[0039] e. The signal source microwave signal is divided into the main signal and the bypass signal through the coupler;

[0040] The main signal is transmitted to the device through the isolator, and the signal is transmitted to the load regulator after being processed by the device;

[0041] f. The load regulator adjusts the microwave signal at the RF output end of the compound semiconductor device to a predetermined standing wave ratio and phase. In this embodiment, the standing wave ratio is set to 5:1 and the phase is 20 O ;

[0042] g. The bypass signal is transmitted to the first input power meter through the first attenuator;

[0043] h. In this embodiment, the attenuation of the first attenuator is 20 dB, and the power output by the first power meter is 41.2 dBm;

[0044] In this embodiment, the attenuation of the second attenuator is 30 dBm, and the output power of the calibrated second power meter is 50.5 dBm;

[0045] i. The first power meter and the second power meter monitor the input signal and the output signal of the device respectively to observe whether the working state of the device is normal;

[0046] j. The device generates an electroluminescent light signal under the combined action of a DC signal and a microwave signal;

[0047] k. The EMMI universal platform collects the optical signal of the device in the working state, and after data processing, forms the RF EMMI distribution diagram of the device in the working state. Figure 3 shown.

[0048] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not further describe various possible combinations.

Claims

1. A compound semiconductor radio frequency power test system based on the EMMI system, characterized in that: It includes a signal source, a coupler, an isolator, a load regulator and an EMMI platform; the signal source is connected to the radio frequency input end of the compound semiconductor device through the coupler and the isolator, and the radio frequency output end of the compound semiconductor device is connected to the load regulator; Firstly, the EMMI platform is used to collect the background light signal of the compound semiconductor device when no power is applied and no microwave excitation signal is applied; Then, the compound semiconductor device is powered on so that the compound semiconductor device is in a conducting or pinching-off working state, and according to the working state of the compound semiconductor device, the signal source is adjusted to provide a microwave excitation signal for the compound semiconductor device, and the standing wave ratio and phase of the microwave signal at the radio frequency output end of the compound semiconductor device are adjusted through a load regulator, thereby changing the optical signal of the compound semiconductor device, and the optical signal of the compound semiconductor device is collected in real time using an EMMI platform, and the EMMI platform generates a radio frequency EMMI distribution diagram of the compound semiconductor device in the working state according to the background light signal and the collected optical signal of the compound semiconductor device in the working state; the system also includes a first attenuator, a second attenuator, a first power meter and a second power meter; the coupler is connected to the first power meter through the first attenuator; the load regulator is connected to the second power meter through the second attenuator; the first attenuator attenuates the microwave excitation signal input from the signal source to the compound semiconductor device to a range that can be monitored by the first power meter, the load regulator transmits the signal output from the radio frequency output end of the compound semiconductor device to the second attenuator, and the second attenuator attenuates the signal to a range that can be monitored by the second power meter; and judging whether the working state of the semiconductor compound is normal according to the difference between the monitoring values ​​of the first power meter and the second power meter; When the compound semiconductor device is powered on, the source is grounded, and the gate and drain of the compound semiconductor device are connected to a DC power supply, so that the compound semiconductor device is in a conducting working state or a pinched-off working state.

2. The compound semiconductor radio frequency power test system based on the EMMI system according to claim 1, characterized in that: The material of the compound semiconductor device is indium phosphide, gallium arsenide, gallium nitride, silicon carbide or gallium oxide.

3. The compound semiconductor radio frequency power test system based on the EMMI system according to claim 1, characterized in that: The compound semiconductor device type is MOSFET, MISFET, MESFET, HFET, PHEMT, HEMT, SBD or HBT.

4. A test method for a compound semiconductor radio frequency power test system based on the EMMI system of claim 1, characterized in that: The specific steps include: Step 1: Use the EMMI platform to collect the background light signal of the compound semiconductor device when no power is applied and no microwave excitation signal is applied; Step 2: Powering up the compound semiconductor device so that the compound semiconductor device is in a working state; Step 3: adjusting the microwave excitation signal input to the compound semiconductor device according to the working state of the compound semiconductor device; Step 4: adjusting the standing wave ratio and phase of the microwave signal at the radio frequency output end of the compound semiconductor device, thereby changing the optical signal of the compound semiconductor device; Step 5: Use the EMMI platform to collect different optical signals of the compound semiconductor device in the working state in real time. The EMMI platform removes the background optical signal from the collected optical signal, and then the EMMI platform generates a radio frequency EMMI distribution map of the compound semiconductor device in the working state according to the collected optical signal.

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