Temperature sensor circuit with chip

Abstract

The application discloses a temperature sensor circuit and chip, wherein the temperature sensor circuit comprises a coarse conversion ADC module, a bias current adjustment module, a fine conversion ADC module and an output module. The temperature signal detected by a temperature measuring device is firstly converted into a digital signal and an analog residual signal by the coarse conversion ADC module, then the first digital signal is adjusted by the bias current adjustment module to output a bias current to the fine conversion ADC module, the analog residual signal is converted into a second digital signal by the fine conversion ADC module according to the bias current, and finally the output module outputs a digital temperature signal according to the first digital signal and the second digital signal. Thus, the temperature sensor circuit can work normally in a temperature range, and the power consumption of the circuit is reduced and the working performance of the circuit is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of integrated circuit technology, and in particular to a temperature sensor circuit and a chip. BACKGROUND

[0002] At present, more and more chips need to monitor the temperature on the chip during work. Through the monitoring of the temperature, it can be judged whether the chip needs to be operated according to the collected environmental temperature or chip temperature data. For example, when the environmental temperature is too high, the user is prompted to take protective action on the chip, reduce the working frequency of the chip or suspend the work of the chip, thereby improving the functional safety level of the chip.

[0003] In order to quantify the results of the temperature sensor, an analog / digital converter (ADC) needs to be used to convert the physical quantity (voltage / current) sensitive to temperature on the chip into a digital quantity, and then the temperature data on the chip is obtained. The commonly used options are to quantify the base-emitter voltage (V BE ) of the transistor and the difference AV BE between the base-emitter voltages of the transistors working at different current densities. In order to obtain higher temperature measurement accuracy, the ADC circuit used by the temperature sensor generally needs to have high resolution. The traditional technical solution is to use an oversampling sigma-delta ADC to trade time for accuracy. The sigma-delta ADC uses oversampling technology and noise shaping technology to obtain high resolution and accuracy, but at the same time, the conversion time consumed is correspondingly lengthened.

[0004] The sigma-delta ADC is a switched capacitor circuit. During the operation of the circuit, the amplifier continuously charges and discharges the capacitor, and the comparator circuit in the sigma-delta ADC also needs to continuously judge the voltage of the comparator and amplify it to the digital level. Therefore, the operational amplifier and the comparator in the sigma-delta ADC need to have sufficient power consumption to ensure that they have sufficient bandwidth. Since the bandwidth changes with temperature, it will cause the speed of the amplifier to change at high and low temperatures.

[0005] In related designs, the higher the temperature, the slower the speed of the amplifier. In order to meet the accuracy at high temperature, the speed of the amplifier at high temperature needs to be designed to be higher than the lowest target speed of the amplifier. However, this will cause the speed of the amplifier to have a large surplus at low temperature, that is, the power consumption of the temperature sensor at low temperature is significantly higher than the actual required power consumption. SUMMARY

[0006] The present invention aims to at least partially solve one of the technical problems in related technologies. Therefore, one objective of the present invention is to provide a temperature sensor circuit that ensures normal operation within a specified temperature range, while simultaneously reducing power consumption and improving circuit performance.

[0007] The second objective of this invention is to provide a chip.

[0008] To achieve the above objectives, a first aspect of the present invention provides a temperature sensor circuit, which includes a coarse-to-digital converter (ADC) module for performing analog-to-digital conversion on an input analog temperature signal to obtain a first digital signal and an analog residual signal; a bias current adjustment module for outputting a bias current based on the first digital signal; a fine-to-digital converter (ADC) module for performing analog-to-digital conversion on the analog residual signal based on the bias current to obtain a second digital signal; and an output module for outputting a digital temperature signal based on the first digital signal and the second digital signal.

[0009] The temperature sensor circuit of this invention includes a coarse-to-digital converter (ADC) module, a bias current adjustment module, a fine-to-digital converter (ADC) module, and an output module. First, the coarse-to-digital converter (ADC) module performs analog-to-digital conversion on the temperature signal detected by the temperature sensing device to obtain a first digital signal and an analog residual signal. Then, the bias current adjustment module adjusts the first digital signal to output a bias current to the fine-to-digital converter (ADC) module. The fine-to-digital converter (ADC) module performs analog-to-digital conversion on the analog residual signal based on the bias current to obtain a second digital signal. Finally, the output module outputs a digital temperature signal based on the first and second digital signals. Therefore, the temperature sensor circuit of this invention can ensure normal operation within the temperature range, while reducing circuit power consumption and improving circuit performance.

[0010] In some embodiments of the present invention, the bias current adjustment module includes: a current adjustment signal generation unit for generating a current adjustment signal based on the first digital signal; and a bias current generation unit for generating the bias current based on the current adjustment signal.

[0011] In some embodiments of the present invention, the current regulation signal generation unit uses a lookup table to obtain a switch control signal corresponding to the bias current, so as to control the bias current generation unit to generate the bias current.

[0012] In some embodiments of the present invention, the bias current generating unit includes: a current source; a first transistor, the drain of the first transistor being connected to the gate and then connected to the current source; N second transistors, the drains of each second transistor being connected together as the output terminal of the bias current generating unit, the gate of each second transistor being connected to the drain of the first transistor through a first switch and connected to the source of the first transistor through a second switch, the sources of each second transistor being connected together and then connected to the source of the first transistor and connected to ground, wherein N is a positive integer.

[0013] In some embodiments of the present invention, both the first transistor and the second transistor are MOS transistors.

[0014] In some embodiments of the present invention, the switch control signal corresponding to the first switch is opposite to the switch control signal corresponding to the second switch.

[0015] In some embodiments of the present invention, the output module includes a register for shifting the first digital signal to the left to the same number of bits as the resolution of the fine conversion ADC module, and then superimposing it with the second digital signal to obtain the digital temperature signal.

[0016] In some embodiments of the present invention, the coarse conversion ADC module is one of a successive approximation analog-to-digital converter, a pipelined converter, and a flash converter.

[0017] In some embodiments of the present invention, the fine-conversion ADC module is a Σ-Δ analog-to-digital converter.

[0018] In some embodiments of the present invention, the simulated temperature signal is obtained by a temperature measuring device, wherein the temperature measuring device is a transistor or a temperature-sensing resistor.

[0019] To achieve the above objectives, a second aspect of the present invention provides a chip including the temperature sensor circuit described in the above embodiments.

[0020] The chip in this embodiment of the invention, through the sensor circuit in the above embodiment, can ensure that the temperature sensor circuit can work normally within the temperature range, while reducing circuit power consumption and improving circuit performance.

[0021] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0022] Figure 1 This is a structural block diagram of a temperature sensor circuit according to an embodiment of the present invention;

[0023] Figure 2 This is a schematic diagram of coarse and fine conversion according to a specific embodiment of the present invention;

[0024] Figure 3 This is a schematic diagram of signal and conversion mode switching according to a specific embodiment of the present invention;

[0025] Figure 4 This is a structural block diagram of a temperature sensor circuit according to a specific embodiment of the present invention;

[0026] Figure 5 This is a schematic diagram of a bias current adjustment module according to a specific embodiment of the present invention;

[0027] Figure 6 This is a schematic diagram illustrating the relationship between the transconductance and temperature of an input pair transistor according to a specific embodiment of the present invention.

[0028] Figure 7 This is a chip structure block diagram according to an embodiment of the present invention. Detailed Implementation

[0029] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0030] The temperature sensor circuit and chip of the present invention are described below with reference to the accompanying drawings.

[0031] Figure 1 This is a structural block diagram of a temperature sensor circuit according to an embodiment of the present invention.

[0032] like Figure 1 As shown, the present invention proposes a two-step temperature sensor circuit 10, which includes a coarse conversion ADC module 11, a bias current adjustment module 12, a fine conversion ADC module 13, and an output module 14.

[0033] The coarse-conversion ADC module 11 is used to perform analog-to-digital conversion on the input analog temperature signal to obtain a first digital signal and an analog residual signal; the bias current adjustment module 12 is used to output a bias current according to the first digital signal; the fine-conversion ADC module 13 is used to perform analog-to-digital conversion on the analog residual signal according to the bias current to obtain a second digital signal; and the output module 14 is used to output a digital temperature signal according to the first digital signal and the second digital signal.

[0034] First, it should be noted that the two-step temperature sensor includes a temperature sensing device and a two-step temperature sensor circuit 10. This embodiment mainly defines the two-step temperature sensor circuit 10. The two-step temperature sensor circuit 10 can convert the temperature signal detected by the temperature sensing device into two steps. Therefore, the output terminal of the temperature sensing device can be connected to the input terminal of the two-step temperature sensor circuit 10. Specifically, the output terminal of the temperature sensing device is connected to the input terminal of the coarse conversion ADC module 11. It can be understood that the temperature sensing device can be a transistor or a temperature-sensing resistor, or other device capable of generating a temperature-related voltage.

[0035] Specifically, the temperature sensing device can detect temperature and output an analog quantity related to the detected temperature, such as a current signal or a voltage signal. The two-step temperature sensor circuit 10 can convert this analog quantity into a digital quantity and output it. More specifically, the coarse-conversion ADC module 11 first converts the analog temperature signal to obtain a first digital signal and a portion of the analog residual signal. The bias current adjustment module 12 takes the first digital signal as the input signal and outputs a bias current according to the input signal. The fine-conversion ADC module 13 takes the analog residual signal as the input signal and performs analog-to-digital conversion on the analog residual signal according to the bias adjustment current to obtain a second digital signal. In this embodiment, the output module takes the first digital signal and the second digital signal as input signals respectively, calculates the digital temperature signal based on the first digital signal and the second digital signal, and outputs the digital temperature signal as the output signal of the two-step temperature sensor circuit 10.

[0036] It should be noted that when the fine conversion ADC module 13 of this embodiment performs analog-to-digital conversion on the analog residual signal, it first adjusts the bias current output by the bias current adjustment module 12, so that the power consumption and utilization rate of the temperature sensor can reach the best within the entire temperature range.

[0037] In this embodiment, the coarse conversion ADC module 11 can be a successive approximation analog-to-digital converter, a pipelined converter, or a flash converter. It is understood that although the coarse conversion ADC module 11 has low accuracy, its conversion speed is very fast, enabling it to quickly perform a coarse conversion of the analog temperature signal. The fine conversion ADC module 13 in this embodiment is a Σ-Δ analog-to-digital converter. It is understood that after fine conversion by this fine conversion ADC module 13, very accurate temperature measurement can be achieved.

[0038] More specifically, suppose the analog temperature signal X generated by the temperature sensing device decreases as the temperature increases, such as Figure 2As shown, the simulated temperature signal X changes from 20 to 5 from -40℃ to 125℃. The coarse conversion ADC module 11 can locate the simulated temperature signal X between n and n+1, but at this point, the width of each grid is still quite large. Optionally, the temperature corresponding to each grid can be 5℃ to 10℃; in this embodiment, the temperature corresponding to each grid is approximately 10℃. After the coarse conversion ADC module 11 determines the location range of the simulated temperature signal, the fine conversion ADC module 13 can perform a more refined conversion based on this. In this embodiment, the fine conversion ADC module 13 can divide the grid of n to n+1 determined by the coarse conversion ADC module 11 into 2... 9 The system divides the sample into several grids and determines the value of the simulated temperature signal X within a small grid. The temperature of a small grid is approximately 0.01℃ to 0.02℃, achieving very precise temperature measurement accuracy.

[0039] It should be noted that the embodiments of the present invention do not limit the temperature represented by each grid of the coarse conversion ADC module 11 and the fine conversion ADC module 13, and the division can be made according to actual requirements.

[0040] In one embodiment of the present invention, such as Figure 3 As shown in the figure, the enable signal EN, clock signal CLK, comparator signal CLK_COMP, comparator output period, and conversion model are represented respectively. After the two-step temperature sensor circuit starts working, the coarse conversion ADC module completes the coarse conversion of the analog temperature signal after 5 clock cycles. The conversion result at this time represents a relatively coarse temperature, but its accuracy is sufficient to help adjust the power consumption of the sensor circuit. After the coarse conversion, current adjustment can be performed, followed by fine conversion. It should be noted that the specific number of clock cycles is related to the type of coarse conversion ADC module and the temperature value represented by each scale, and is not limited to this embodiment.

[0041] In some embodiments of the present invention, the bias current adjustment module includes a current adjustment signal generation unit and a bias current generation unit, wherein the current adjustment signal generation unit is used to generate a current adjustment signal according to a first digital signal, and the bias current generation unit is used to generate a bias current according to the current adjustment signal.

[0042] Specifically, the bias current adjustment module in this embodiment may include a current adjustment signal generation unit and a bias current generation unit. The current adjustment signal generation unit can receive a first digital signal sent by the coarse conversion ADC module, generate a corresponding current adjustment signal based on the first digital signal, and send the current adjustment signal to the bias current generation unit. After receiving the current adjustment signal, the bias current generation unit can generate a bias current based on the signal and send the bias current to the fine conversion ADC module so that the fine conversion ADC module can process the analog residual signal based on the bias current to output a second digital signal.

[0043] In some embodiments of the present invention, such as Figure 4 As shown, the current regulation signal generation unit can obtain the switch control signal corresponding to the bias adjustment power supply by looking up table 121, so as to control the bias current generation unit 122 to generate bias current.

[0044] Specifically, the coarse conversion ADC module 11 in this embodiment can be a SAR ADC (successive approximation register ADC) module, the fine conversion ADC module 13 can be a Σ-Δ ADC, the output module 14 includes a register, and the bias current adjustment module 12 may include a lookup table 121 and a bias current generation unit 122.

[0045] More specifically, after the analog temperature signal output by the temperature measuring device is input into the SAR ADC 11, the SAR ADC 11 processes the analog temperature signal to generate a first digital signal and an analog residual signal. The first digital signal can be sent to the lookup table 121 so that the lookup table 121 can obtain the switch control signal corresponding to the bias adjustment power supply. Then, the switch control signal is used to control the bias current generating unit 122 to generate a bias current.

[0046] It should be noted that in this embodiment, a lookup table can be preset and then stored in the chip's non-volatile memory device. The lookup table contains the correspondence between the current temperature value and the optimal bias current of the fine converter Σ-ΔADC. The bias current generation unit can generate different bias currents according to this lookup table.

[0047] In this embodiment, such as Figure 5 As shown, the bias current generating unit includes a current source, a first transistor, and N second transistors.

[0048] In this configuration, the drain of the first transistor is connected to the gate and then connected to a current source; the drains of each second transistor are connected together as the output terminal of the bias current generation unit; the gate of each second transistor is connected to the drain of the first transistor through a first switch and to the source of the first transistor through a second switch; the sources of each second transistor are connected together and then connected to the source of the first transistor and connected to ground; where N is a positive integer.

[0049] Specifically, see Figure 1 , Figure 4 and Figure 5 The lookup table 121, based on the results of the coarse-conversion ADC module 11 and the preset correspondence between temperature and current control, changes the switching states of s0~sn and s0_n~s1_n. s0~sn correspond to the first switch of the bias current generation unit 122, and s0_n~s1_n correspond to the second switch of the bias current generation unit 122. The switching control signal corresponding to the first switch is opposite to the switching control signal corresponding to the second switch; that is, s0_n is the inverted signal of s0, s1_n is the inverted signal of s1, and so on. In the circuit of the bias current generation unit 122, both the first transistor and the second transistor are NMOS transistors. If s0 is 0, the NMOS transistor in this branch is in the off state, the current in the branch is in the off state and will not be added to the total current, thereby reducing the current provided to the fine converter. If s0 is 1, the NMOS transistor in this branch is in the on state and forms a current mirror with the leftmost NMOS transistor. The current in the branch is proportionally replicated to the leftmost current source and will be added to the total bias current, thereby providing it to the fine converter ADC module to achieve the purpose of adjusting the current of the fine converter ADC module.

[0050] It should be noted that the first transistor and the second transistor in this embodiment can also be PMOS transistors. Their specific working methods can be adjusted by referring to the working methods of NMOS transistors, and will not be repeated here.

[0051] See Figure 4 The output module includes a register. The register shifts the first digital signal to the left to the same number of bits as the resolution of the fine conversion ADC module, and then superimposes it with the second digital signal to obtain a digital temperature signal.

[0052] Specifically, after the fine-conversion ADC module processes the analog residual signal based on the bias current, it generates a second digital signal and sends it to register 14. Register 14 can superimpose this second digital signal with the first digital signal processed by the coarse-conversion ADC module 11 to obtain a digital temperature signal. More specifically, register 14 can first shift the first digital signal to the left to obtain the specific temperature value corresponding to the lower limit of the interval where the analog temperature signal is located. Then, it adds the temperature value corresponding to the second digital signal to the lower limit temperature value of the interval to obtain the digital temperature signal, which is then output.

[0053] It should be noted that, without using the bias current adjustment module, i.e., when the bias current is a fixed value, the transconductance g of the amplifier input pair transistors... m The simulation results of the relationship between temperature and other parameters are as follows: Figure 6 g at ​​room temperature (25℃) m It is 1.2 times that at 120℃, and g at low temperature (-40℃) m It is 1.44 times that at 120℃. The accuracy of a temperature sensor is determined by the minimum bandwidth of its internal operational amplifier (and similarly, the comparator), calculated using the amplifier bandwidth GBW formula: Bandwidth GBW and g m Proportional, where C is the load capacitance at the amplifier output, therefore g at low temperatures m Increasing the bias current will cause the amplifier's actual speed to exceed the speed required by the accuracy specifications, resulting in wasted power consumption. In this invention, the bias current adjustment module adjusts the bias current of the ∑-Δ ADC based on the output of the coarse-conversion ADC module, and further adjusts it according to the formula... It can be seen that by reducing the bias in real time at low temperatures, the temperature sensor can maintain its performance across the entire operating temperature range. m Maintaining a stable size, where μ n / p is the mobility of the NMOS or PMOS input pair in the operational amplifier, and I is the current of the input pair. In this embodiment, the bias current can be reduced by approximately (1.2) at room temperature. 2 -1) / 1.2 2 ≈30%, at -40℃ the bias current can be reduced by approximately (1.44). 2 -1) / 1.44 2≈51%. During the entire conversion process, the fine-conversion ADC module's operating time accounts for a very high percentage; in this embodiment, the ∑-ΔADC module's operating time accounts for over 95% of the total operating time of the two-step temperature sensor circuit. Therefore, compared to related technical solutions, this embodiment reduces the overall power consumption of the temperature sensor by approximately 95% × 30% = 28.5% at room temperature and by approximately 95% × 51% = 48% at -40℃.

[0054] It should be noted that in the fine conversion stage of the two-step temperature sensor circuit of this embodiment, the bias current adjustment module adjusts the bias current provided to the fine conversion ADC module according to the temperature conversion result of the coarse conversion ADC module, so as to counteract the effect of the semiconductor device changing with temperature, so that the temperature sensor has a better amplifier speed throughout the temperature range. Compared with related technologies, it can greatly reduce the power consumption in the low temperature region.

[0055] In summary, the two-step temperature sensor circuit of this invention can ensure that the temperature sensor circuit can work normally within the temperature range, while reducing circuit power consumption and improving circuit performance.

[0056] Figure 7 This is a chip structure block diagram according to an embodiment of the present invention.

[0057] Furthermore, such as Figure 7 As shown, the present invention proposes a chip 100, which includes the two-step temperature sensor circuit 10 in the above embodiments.

[0058] The chip in this embodiment of the invention, through the two-step temperature sensor circuit described in the above embodiment, can ensure that the temperature sensor circuit can work normally within the temperature range, while reducing chip power consumption and improving chip performance.

[0059] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0060] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0061] Furthermore, the terms "first," "second," etc., used in the embodiments of this invention are for descriptive purposes only and should not be construed as indicating or implying relative importance, or implicitly specifying the number of technical features indicated in this embodiment. Therefore, features defined with terms such as "first" and "second" in the embodiments of this invention can explicitly or implicitly indicate that the embodiment includes at least one of those features. In the description of this invention, the word "multiple" means at least two or more, such as two, three, four, etc., unless otherwise explicitly specified in the embodiments.

[0062] In this invention, unless otherwise explicitly specified or limited in the embodiments, the terms "installation," "connection," "joining," and "fixing" appearing in the embodiments should be interpreted broadly. For example, a connection can be a fixed connection, a detachable connection, or an integral part; it can also be a mechanical connection, an electrical connection, etc. Of course, it can also be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components, or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific implementation.

[0063] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0064] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A temperature sensor circuit, characterized in that, include: The coarse-conversion ADC module is used to perform analog-to-digital conversion on the input analog temperature signal to obtain the first digital signal and the analog residual signal; A bias current adjustment module is used to output a bias current according to the first digital signal; The fine-conversion ADC module is used to perform analog-to-digital conversion on the analog residual signal according to the bias current to obtain a second digital signal; The output module is used to output a digital temperature signal based on the first digital signal and the second digital signal; The bias current adjustment module includes: A current regulation signal generation unit is used to generate a current regulation signal based on the first digital signal; A bias current generating unit is used to generate the bias current according to the current adjustment signal; The current regulation signal generation unit uses a lookup table to obtain the switch control signal corresponding to the bias current, so as to control the bias current generation unit to generate the bias current. The bias current generating unit includes: Current source; The first transistor, whose drain and gate are connected together, is then connected to the current source; N second transistors, the drains of each second transistor are connected together as the output of the bias current generating unit. The gate of each second transistor is connected to the drain of the first transistor through a first switch and to the source of the first transistor through a second switch. The sources of each second transistor are connected together and then connected to the source of the first transistor and ground. Here, N is a positive integer.

2. The temperature sensor circuit according to claim 1, characterized in that, Both the first transistor and the second transistor are MOS transistors.

3. The temperature sensor circuit according to claim 1, characterized in that, The switch control signal corresponding to the first switch is opposite to the switch control signal corresponding to the second switch.

4. The temperature sensor circuit according to any one of claims 1-3, characterized in that, The output module includes a register for shifting the first digital signal to the left to the same number of bits as the resolution of the fine-conversion ADC module, and then superimposing it with the second digital signal to obtain the digital temperature signal.

5. The temperature sensor circuit according to any one of claims 1-3, characterized in that, The coarse conversion ADC module is one of the following: successive approximation analog-to-digital converter, pipelined converter, and flash converter.

6. The temperature sensor circuit according to any one of claims 1-3, characterized in that, The fine-conversion ADC module is a Σ-Δ type analog-to-digital converter.

7. The temperature sensor circuit according to any one of claims 1-3, characterized in that, The simulated temperature signal is obtained by a temperature measuring device, which is a transistor or a temperature-sensing resistor.

8. A chip, characterized in that, Includes a temperature sensor circuit according to any one of claims 1-7.

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