High quality factor embedded resonator wafer

Abstract

Embodiments disclosed herein include diagnostic substrates and methods of using such substrates. In one embodiment, a diagnostic substrate includes a substrate and a device layer over the substrate. In one embodiment, the diagnostic substrate further includes a resonator in the device layer. In one embodiment, the resonator includes a cavity, a cover layer over the cavity, and an electrode within the cavity for driving and sensing resonance of the cover layer. In one embodiment, the diagnostic substrate further includes a reflector around a perimeter of the resonator.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to U.S. Non-Provisional Application No. 16 / 597,615, filed October 9, 2019, which claims priority to U.S. Provisional Application No. 62 / 900,088, filed September 13, 2019, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments relate to the field of semiconductor manufacturing, and in particular, to systems and methods for monitoring processing parameters of semiconductor manufacturing operations. In one embodiment, a resonator is surrounded by a reflector configured to reflect acoustic energy back to the resonator to provide an improved quality factor. Background Technology

[0004] In many semiconductor devices, the critical dimension (CD) and other feature dimensions are constantly shrinking. Extensive process development is required to develop reliable processes with high repeatability. Typically, a process is developed by running it on a test substrate. The test substrate is then analyzed using various metrology tools to determine the results of the process. For example, the cross-section of the substrate can be analyzed to determine the amount of material removed by an etching process or added by a deposition process.

[0005] Using such a test substrate and post-treatment metrology has several drawbacks. One drawback is the significant time required for cross-sectional cutting and analysis (e.g., several days or more). Furthermore, cross-sectional cutting at each location requires considerable work. Therefore, only a limited number of cross-sections can be analyzed for each treatment. Another drawback is that only the final results of the treatment can be analyzed. This limits the information that can be obtained about the treatment. For example, the rate of change of the treatment cannot be determined from the final results of the cross-sections of the test substrate. Summary of the Invention

[0006] The embodiments disclosed herein include a diagnostic substrate and a method of using such a substrate. In one embodiment, the diagnostic substrate includes a substrate and a device layer thereon on the substrate. In one embodiment, the diagnostic substrate further includes a resonator in the device layer. In one embodiment, the resonator includes a cavity, a cover layer over the cavity, and electrodes within the cavity for driving and sensing resonance of the cover layer. In one embodiment, the diagnostic substrate further includes a reflector surrounding the periphery of the resonator.

[0007] Another embodiment includes a diagnostic substrate comprising a substrate and a device layer thereon. In one embodiment, the device layer has a first impedance. In one embodiment, the diagnostic substrate further includes a ring having a second impedance, wherein the ring surrounds at least a portion of the device layer. In one embodiment, the diagnostic substrate further includes a driver and a sensor configured to detect resonance.

[0008] Another implementation may include a method for determining processing parameters. In one embodiment, the method includes processing a diagnostic substrate, wherein the diagnostic substrate includes a resonator and a reflector surrounding the resonator. The method may further include driving the resonator to a plurality of resonant modes, wherein acoustic waves propagating from the resonator are reflected back to the resonator by the reflector. In one embodiment, the method further includes recording the resonant frequency of the resonator for each resonant mode. In one embodiment, the method further includes determining processing parameters from the resonant frequencies of the plurality of resonant modes. Attached Figure Description

[0009] Figure 1A This is a schematic plan view of a sensing area on a substrate according to one embodiment.

[0010] Figure 1B This is an enlarged schematic plan view of the sensing area according to one embodiment, which shows an array of micro-resonator sensors.

[0011] Figure 2A This is a cross-sectional view of a microresonator sensor according to one embodiment.

[0012] Figure 2B This is a plan view of a microresonator sensor according to one embodiment.

[0013] Figure 2C It is a perspective view of a pattern formed in a resonant body according to one embodiment.

[0014] Figure 3A This is a cross-sectional schematic diagram showing the propagation of surface waves and bulk waves from a microresonator sensor according to one embodiment.

[0015] Figure 3B This is a cross-sectional schematic diagram showing acoustic energy propagating from a microresonator sensor according to one embodiment.

[0016] Figure 4A This is a schematic cross-sectional view of the propagation of surface waves and volume waves propagating from a microresonator sensor and the surface waves and volume waves reflected after reaching the reflector, according to one embodiment.

[0017] Figure 4BThis is a cross-sectional schematic diagram showing, according to one embodiment, sound energy is confined to the vicinity of a microresonator sensor by a reflector.

[0018] Figure 5A This is a plan view of a microresonator sensor having a resonant cavity and a reflector ring surrounding the resonant cavity, according to one embodiment.

[0019] Figure 5B It is according to one embodiment along Figure 5A The image shows a cross-sectional view of the microresonator sensor at line 5-5', where the reflector ring is a cavity in the device layer.

[0020] Figure 5C It is according to one embodiment along Figure 5A The cross-sectional view of the microresonator sensor in line 5-5' is shown, where the reflector ring is a cavity that passes through the cover layer and enters the device layer.

[0021] Figure 5D It is according to one embodiment along Figure 5A The image shows a cross-sectional view of the microresonator sensor at line 5-5', where the reflector ring is the block above the cover layer.

[0022] Figure 5E It is according to one embodiment along Figure 5A The image shows a cross-sectional view of the microresonator sensor at line 5-5', where the reflector ring is a block embedded in the substrate.

[0023] Figure 5F It is according to one embodiment along Figure 5A The cross-sectional view of the microresonator sensor in line 5-5' shows a reflector ring comprising a first ring above the resonator cavity and a second ring below the resonator cavity.

[0024] Figure 5G It is according to one embodiment along Figure 5A The cross-sectional view of the microresonator sensor in line 5-5' is shown, where the reflector ring is a block embedded in the cover layer and the device layer.

[0025] Figure 6 This is a plan view of a microresonator sensor according to one embodiment, the microresonator sensor having a first reflector ring and a second reflector ring surrounding a resonator cavity.

[0026] Figure 7A This is a cross-sectional view of a microresonator sensor with a reflector ring according to one embodiment, the size of which is adjusted by an actuator.

[0027] Figure 7BThis is a cross-sectional view of a microresonator sensor with a reflector ring according to one embodiment, the reflector ring having a heater for adjusting the density and / or modulus of the reflector ring.

[0028] Figure 7C This is a cross-sectional view of a microresonator sensor with multiple reflector rings according to one embodiment, the multiple reflector rings having an actuable cover layer above the cavity.

[0029] Figure 7D This is a cross-sectional view of a microresonator sensor with a reflector ring according to one embodiment, the reflector ring being contained in a block above the reflector ring to adjust the impedance of the reflector.

[0030] Figure 7E This is a cross-sectional view of a microresonator sensor with a reflector ring according to one embodiment, the reflector ring including a plurality of holes passing through a cover layer above the reflector ring.

[0031] Figure 8A This is a plan view of a resonator ring according to one embodiment, the resonator ring surrounding a portion of the device layer and the cover layer.

[0032] Figure 8B It is according to one embodiment along line 8-8' Figure 8A A cross-sectional view of the resonator ring in the image.

[0033] Figure 8C This is a plan view of a resonator ring according to one embodiment, the resonator ring having a reflector surrounding the resonator ring.

[0034] Figure 9 This is a processing flow for determining processing parameters for a processing operation according to one embodiment.

[0035] Figure 10 A block diagram of an exemplary computer system according to one embodiment is shown, which can be used in conjunction with processing for determining processing parameters of processing operations. Detailed Implementation

[0036] The systems and methods described herein include a diagnostic board for monitoring processing parameters of processing operations. Numerous specific details are set forth in the following description to provide a thorough understanding of the embodiments. It will be apparent to those skilled in the art that embodiments may be practiced without these specific details. In other instances, well-known aspects have not been described in detail to avoid unnecessarily obscuring the embodiments. Furthermore, it should be understood that the various embodiments shown in the accompanying figures are illustrative representations and are not necessarily drawn to scale.

[0037] As mentioned above, current timelines for developing processing operations (such as etching, deposition, polishing, implantation, or the like) are lengthy due to the labor-intensive metrology required to determine processing parameters. The embodiments described herein accelerate processing development by using a diagnostic substrate. This diagnostic substrate comprises multiple microresonator sensors distributed across the substrate. Therefore, processing parameters and their uniformity across the entire substrate surface are obtained without requiring a large cross-section.

[0038] In some implementations, multiple microresonator sensors can be grouped into sensing regions across the entire substrate surface. For example, hundreds of sensing regions can be formed on a diagnostic substrate, each comprising thousands or tens of thousands of microresonator sensors. In such implementations, the microresonators in each sensing region can be used to provide a high signal-to-noise ratio. Thus, the implementation allows for high resolution even when dealing with critical dimensions (CD) on the order of tens of nanometers. In some implementations, variations in CD in the range of a few angstroms to a few nanometers can be detected with an accuracy of parts per million (PPM).

[0039] In some implementations, the microresonator sensor may include a resonator, such as a diaphragm extending above the cavity. The diaphragm can be directly modified by processing operations (e.g., deposition, etching, polishing, implantation, or the like). Modifications to the diaphragm result in a change in its resonant frequency. This change in resonant frequency can then be used to determine physical changes on the surface of the diaphragm to monitor the condition of the diaphragm (e.g., temperature, surface potential, etc.) or to monitor external environmental conditions (e.g., pressure surrounding the diaphragm, etc.).

[0040] The embodiments disclosed herein offer high accuracy, at least in part due to the presence of one or more reflector rings around the resonator. The reflector rings are configured to provide a barrier that reflects acoustic energy propagating from the resonator back to it. Therefore, energy leakage from the resonator is significantly reduced, and the quality factor is improved. For example, a reflector ring (such as the one described herein) can provide approximately 10 times or more of a quality factor improvement compared to a similar resonator without a reflector ring. A high quality factor provides a sharp peak at the resonant frequency and thus offers higher resolution.

[0041] In one embodiment, the reflector ring may also be configured to be adjusted to modify the acoustic impedance to match a target wavelength, thereby further improving the quality factor. For example, the reflector ring may have dimensions that can be changed by an actuator or the like. In other embodiments, the reflector ring may have adjustable material properties (e.g., using a local heater). For example, heating the reflector ring can change the density and / or modulus of the reflector ring to change the acoustic impedance. The use of certain devices (such as actuators and heaters) can allow for real-time, in-situ adjustment of the quality factor. In other embodiments, material deposition above or subtraction from the reflector ring can also be used to adjust the acoustic impedance to provide an improved quality factor.

[0042] In some embodiments disclosed herein, the reflector ring itself can be used as a resonator. That is, the reflector ring can be monitored as part of the processing parameters of the microresonator. In such embodiments, acoustic energy propagates inward and is confined by the reflector ring to provide a high quality factor. In some embodiments, a second reflector ring may surround the first reflector ring to provide additional confinement of the acoustic energy.

[0043] Furthermore, embodiments may include a diagnostic substrate that can be used to provide in-situ monitoring of the processing operation. In-situ monitoring allows for the monitoring of processing parameters during the processing operation. This also allows for the determination of the rate of change of the processing parameters. Embodiments may include a wireless module that transmits information from the diagnostic substrate in real time. Alternatively, information from the microresonator sensor may be stored in a memory on the diagnostic substrate and processed after the processing operation.

[0044] Now for reference Figure 1A This image shows a schematic plan view of a diagnostic substrate 100 according to one embodiment. In one embodiment, the diagnostic substrate 100 may be formed on a substrate 105. The substrate 105 may be any suitable substrate on which the sensing region 120 can be fabricated. For example, the substrate 105 may be a semiconductor substrate, such as silicon, silicon-on-insulator (SOI), a glass substrate, or the like. In one embodiment, the substrate 105 may be considered a wafer (e.g., a 300 mm silicon wafer or the like). The substrate 105 may have substantially the same dimensions as a production substrate used to fabricate functional devices using processing operations developed using the diagnostic substrate 100. Furthermore, the diagnostic substrate 100 may include a surface that matches the surface of a device substrate. For example, the exposed surface (i.e., across the entire substrate including the sensing region 120) may comprise monocrystalline silicon (or other semiconductor) material. Such a pristine surface allows for low surface roughness, suitable for providing CD measurements at the angstrom to nanometer scale. Moreover, since the surface of the diagnostic substrate 100 matches the surface of a device substrate on which a functional semiconductor device is fabricated, accurate comparisons with typical semiconductor processing operations can be provided.

[0045] Additionally, although referred to as a diagnostic substrate, it should be understood that embodiments may also include a sensing region 120 on the device substrate. In such embodiments, the sensing region 120 may be used during the manufacture of the functional device to provide metrology or other quality control measures concurrently with device manufacturing.

[0046] According to one embodiment, the diagnostic substrate 100 may include a plurality of sensing regions 120. The sensing regions 120 may be distributed across the entire surface of the substrate 105. Including sensing regions 120 at different locations allows for determination of the uniformity of processing operations. It should be understood that... Figure 1A The sensing regions 120 shown are exemplary in nature. The sensing regions 120 can be of any number and can be distributed in any way on the surface of the substrate 105. In some embodiments, more than one hundred sensing regions 120 may be distributed on the surface of the substrate 100.

[0047] Implementations may also include one or more processing regions 135 on the diagnostic substrate 100. In one embodiment, the processing region 135 may be communicatively coupled to the sensing region (e.g., using conductive traces, vias, or the like). In one embodiment, the processing region 135 may include circuitry, logic modules, memory modules, signal processing modules, communication modules, or the like. The processing region 135 may be used to drive electrodes (described in more detail below) that drive the resonance of a resonator in a microresonator in each sensing region 120. The processing region 135 may record the resonant frequency of each microresonator. The processing region 135 may also determine processing parameters from the resonant frequency using methods described in more detail below. In other embodiments, the determination of processing parameters from the resonant frequency may be implemented on a computing system external to the diagnostic substrate. For example, raw (or processed) data from each microresonator may be transmitted (e.g., by a wireless communication module) to an external device for further analysis. In one embodiment, the communication link may be implemented using RF (e.g., WiFi, Bluetooth, etc.), acoustic communication, inductive communication, or optical communication (e.g., fiber optic) or any other suitable communication protocol.

[0048] In some embodiments, the diagnostic substrate 100 may contain only passive components. That is, the diagnostic substrate 100 may include a microresonator communicatively coupled to an external device by an antenna or the like. The microresonator may be driven and sensed by the external device. For example, a wireless link for transmitting power and data between the external device and the microresonator may be provided on the diagnostic substrate 100.

[0049] In the illustrated embodiment, the processing region 135 is shown as formed on the top surface of the substrate 105. However, it should be understood that the processing region 135 may be embedded within the substrate 105 or formed on the back surface of the substrate 105. In one embodiment, the processing region 135 may also include a power source. For example, the power source may be a battery or the like. In other embodiments, the power source may be a wireless power source. For example, the power source may include a conductive coil, an antenna, or the like to enable inductive power coupling or acoustic power coupling. In some embodiments, the wireless power source may also be configured to provide a data link. That is, the frequency of the microresonator can be transmitted to an external device using wireless coupling (e.g., acoustic coupling, inductive coupling, etc.).

[0050] Now for reference Figure 1B The diagram shows an enlarged schematic of a sensing region 120 according to one embodiment. Each sensing region 120 may include a plurality of microresonator sensors 140. In the illustrated embodiment, twenty-five microresonator sensors 140 are shown for simplicity. However, it should be understood that thousands of microresonator sensors 140 may be formed in each sensing region 120. For example, each microresonator sensor 140 may have a diameter of approximately 50 μm. 2 The surface area. In such an embodiment, it can be 100mm. 2 Forty thousand micro-resonator sensors 140 are formed in the sensing region. It should be understood that the size and number of the micro-resonator sensors 140 and the size of the sensing region 120 are exemplary in nature, and embodiments include those with sizes greater than or less than 50 μm. 2 Micro resonators and those with dimensions greater than or less than 100 mm 2 The sensing area. In addition, although the individual microresonator sensors 140 are shown to be uniform, it should be understood that the microresonator sensors 140 in the array may have different sizes, configurations or other different properties.

[0051] The numerous microresonator sensors 140 in each sensing region 120 allow for high signal-to-noise ratios through noise reduction. This enables the identification of minute variations in the processing parameters under investigation. For example, according to the embodiments described herein, variations of a few angstroms to several nanometers in the etched structure CD can be discernible. The embodiments described herein may include microresonator sensors with resonant frequencies of tens of MHz. In such resonators, trenches with a 1:1 trench-to-ridge ratio and a depth of 50 nm may cause a shift in the resonant frequency of approximately 0.05 to 5 MHz. Furthermore, minute variations in trench width (e.g., a few angstroms to a few nanometers) can cause resonant variations of approximately 10 Hz to 1,000 Hz. Similarly, variations in temperature, surface potential, and / or pressure also drive resonant variations. For example, a one-degree temperature change may cause a resonant frequency change between 10 Hz and 1,000 Hz, or a one-volt change in surface potential may cause a resonant frequency change between 10 Hz and 1,000 Hz. Such frequency variations can be easily detected by modern electronic devices with PPM accuracy.

[0052] Now for reference Figure 2A The image shows a cross-sectional view of a microresonator sensor 240 according to one embodiment. The microresonator sensor 240 may be formed over and within a device layer 207, which is formed over a substrate 205. In one embodiment, the device layer 207 may include layers of insulating and conductive materials (e.g., traces, vias, etc.). Although referred to herein as “device layer” 207, it should be understood that in some embodiments, the device layer 207 may contain only passive components. In other embodiments, the device layer 207 may also include active components. In one embodiment, the microresonator sensor 240 includes a capping layer 243 over the device layer 207. In some embodiments, the capping layer 243 may be a raw semiconductor layer. For example, the capping layer 243 may be silicon. In one embodiment, the capping layer 243 may have a thickness T. For example, the thickness T may be between 1 micrometer and 100 micrometers. In one embodiment, the capping layer 243 may include a diaphragm 242 extending over a cavity 248 formed in the device layer 207. That is, diaphragm 242 can be considered as part of cover layer 243 and does not extend upward from cover layer 243. It should be understood that diaphragm 242 is an example of microresonator sensor 240. Implementations include any resonator system. For example, microresonator 240 may include a cantilever beam, comb actuator, or the like.

[0053] The diaphragm 242 can be driven to its resonant frequency by a plurality of electrodes 244 formed on the bottom surface of cavity 248. In one embodiment, the plurality of electrodes 244 can be electrically coupled to processing region 135 (not shown in FIG. 2) via electrical traces and vias 213. In one embodiment, the electrodes 244 can be electrically coupled to the back surface of substrate 205 via vias 213 through the substrate. In one embodiment, the electrodes 244 can be electrically coupled to capping layer 243 via one or more vias 213, traces, or the like. In one embodiment, the plurality of electrodes 244 can be driving / sensing electrodes. Thus, the electrodes 244 can be used to drive the diaphragm 242 and to detect the resonant frequency of the diaphragm 242 during processing of the diaphragm 242. In one embodiment, the plurality of electrodes 244 can be driven by a capacitor. However, it should be understood that resonance of microresonator 240 can be achieved by any suitable mechanism. For example, the microresonator 240 may be driven by a magnetic drive system, a thermal system, an acoustic system, or an optical system, or the microresonator 240 may include a piezoelectric material that causes resonance.

[0054] In one embodiment, a patterned mask 270 may be formed over the diaphragm 242. The patterned mask 270 can be used to partially cover the diaphragm 242 to protect it from the effects of the processing environment (such as an etching environment). During the processing operation being studied with the diagnostic substrate 100, the pattern of the patterned mask 270 can be transferred into the diaphragm. As the diaphragm 242 is processed (e.g., etched), the resonant frequency of the diaphragm 242 will change in a predictable manner. The change in resonant frequency can then be used to calculate physical changes in the diaphragm 242, as will be described in more detail below.

[0055] In some embodiments, the passive coupling antenna 295 can be used to wirelessly drive and sense the resonance of the microresonator sensor 240. For example, the antenna 295 may be formed in the device layer 207. The use of the passive coupling antenna 295 allows for contactless communication of the resonant frequency to external devices and / or for contactless power transfer. Additionally, in some embodiments, when the passive coupling antenna 295 is associated with each microresonator sensor 240, the diagnostic substrate 200 does not include active devices.

[0056] Now for reference Figure 2B The diagram shows a plan view of a cavity 248 in device layer 207 according to one embodiment. In the illustrated embodiment, cavity 248 has a rectangular shape. However, the embodiment is not limited to this configuration, and cavity 248 can be any desired shape, such as square, circular, elliptical, or any other desired shape. As shown, a plurality of electrodes 244 are formed in cavity 248. In the embodiment, the number and arrangement of electrodes 244 allow different resonant modes to be induced in diaphragm 242. Figure 2B Membrane 242 is not shown in the image to avoid obscuring the features of the underlying layer.

[0057] In the illustrated embodiment, four electrodes are shown. When the cavity 248 includes four electrodes, the diaphragm can be driven to at least three different resonant modes. A first resonant mode can be obtained by simultaneously activating all four electrodes 2441-2444. A second resonant mode can be obtained by alternately activating electrodes 2441 and 2442 with electrodes 2443 and 2444. A third resonant mode can be obtained by alternately activating electrodes 2441 and 2443 with electrodes 2442 and 2444. It should be understood that additional resonant modes can be obtained by activating different combinations of electrodes 244.

[0058] Now for reference Figure 2C The figure shows a perspective view of the diaphragm 242 after processing. Diaphragm 242 is shown separately to avoid obscuring the figures. In one embodiment, the second resonant mode causes the diaphragm 242 to bend about a line parallel to the trench 277. In one embodiment, the third resonant mode causes the diaphragm 242 to bend about a line perpendicular to the trench 277. Initially, before etching the substantially square diaphragm, the resonant frequencies of the second and third resonant modes will be substantially the same (due to the absence of trench formation). After trench formation begins, the resonant frequencies of the second and third resonant modes begin to diverge. In a simplified lumped model, the resonant frequency ω of the diaphragm is proportional to the moment of inertia I, as shown in Equation 1, where E is the modulus and m is the mass. Therefore, as the moment of inertia I changes in each bending direction, the resonant frequency also changes.

[0059]

[0060] The divergence of the resonant frequencies of the second and third resonant modes is a result of the change in the moment of inertia about each bending direction in response to variations in the morphology of the diaphragm 242. The equations used to calculate the moment of inertia about each bending direction can be modeled for the desired morphology, and even more precise models can be solved numerically. For example, in a square diaphragm with a series of parallel grooves and a groove-to-ridge ratio of 1:1, the moment of inertia I... 平行 As shown in Equation 2, and the moment of inertia I 垂直 As shown in Equation 3. It should be understood that the equations disclosed in this paper are simplified lumped model. However, Equations 1 and 2 do indeed illustrate the magnitudes of the various variables being treated. For example, consider I... 垂直 Calculate the cube of the depth d in I, and 平行 The power d in the equations is not raised to a higher power. Since the resonant frequency of each mode is determined from the microresonator sensor, the system of equations can then be solved to determine the missing parameters that provide the morphology of the diaphragm 242.

[0061]

[0062] While a parallel trench scenario has been provided above, it should be understood that implementations can include any patterned morphology. To use patterning, implementations only require generating a model of the moments of inertia for multiple resonant modes. For example, the modeled moments of inertia can include computer-generated models far more complex than the examples provided in Equations 1-3. Furthermore, as the complexity of the model increases and the number of resonant modes increases, finer details of the diaphragm morphology can be obtained. For example, the taper of the trench can be determined, the presence of undercuts or feet can be determined, or similar features.

[0063] A key parameter providing improved measurement accuracy is the quality factor of the microresonator. Specifically, regarding... Figure 2A and 2B The quality factor of the described microresonator is limited by acoustic energy loss. Acoustic energy propagates from the diaphragm 242 as it oscillates. The acoustic energy propagates by generating sound waves that pass through the various layers of the device.

[0064] Now for reference Figure 3A The image shows a cross-sectional view of a portion of a microresonator sensor 340 according to one embodiment, schematically depicting the propagation of various types of sound waves 391, 392. The microresonator sensor 340 is similar to... Figure 2A The microresonator sensor is described, but simplified to avoid confusion. For example, the microresonator sensor 340 includes a substrate 305, a device layer 307, and a capping layer 343. A diaphragm 342 is located above the resonator cavity 348 and is driven by an electrode 344.

[0065] During the oscillation of diaphragm 342, sound waves 391 and 392 propagate from diaphragm 342. Sound wave 391 (which is a surface wave) can propagate along the surface. Sound wave 391 (which is a surface wave) is shown to propagate in device layer 307, but it should be understood that sound wave 391 (which is a surface wave) may alternatively propagate near capping layer 343, or near both capping layer 343 and device layer 307, or near substrate 305, device layer 307 and capping layer 343, depending on the material properties, dimensions and oscillation of diaphragm 342. In one embodiment, sound wave 392 (which is a volume wave) can propagate in substrate 305 and device layer 307. As shown, sound wave 392 (which is a volume wave) is reflected away from interfaces with mismatched acoustic impedance (e.g., the bottom surface of substrate 305 connected to an interface with the external environment). Although in Figure 3A Not shown, but when the device layer 307 and the substrate 305 are made of different materials, some portions of the acoustic wave 392 (which is a bulk wave) may also be reflected at the interface between the device layer 307 and the substrate 305.

[0066] Now for reference Figure 3BThis displays an acoustic energy diagram according to one embodiment, depicting the energy loss caused by the propagation of sound waves 391 and 392. Figure 3B For simplicity, only the device layer 307 is shown in the figure. However, a similar diagram can be shown when the cover layer 343 and the substrate 305 are included. As shown, a first source of acoustic energy 390 is provided in the upper left corner of the figure. The first source 390 represents an oscillating diaphragm 342. Acoustic waves 391 (which are surface waves) and 392 (which are volume waves) can propagate from the first source 390. A subset of the volume waves 389 can propagate substantially downwards and generate a second source 390' in the lower left corner of the figure. Secondary surface waves 391' and secondary volume waves 392' can propagate from the second source 390'.

[0067] As shown in the figure, sound wave 391, secondary surface wave 391', sound wave 392, and secondary volume wave 392' can interact (i.e., through constructive and destructive interference) to form a repeating pattern of local energy peaks 385. The three peaks 385... A-C The peaks were shown, and each successive peak had a low intensity. At the third peak, 385... C In addition, the pattern will continue until it reaches different boundaries (e.g., another microresonator, the edge of the device, etc.). That is, as the acoustic wave 391, the secondary surface wave 391', the acoustic wave 392 and the secondary bulk wave 392' propagate further away from the sources 390, 390', the acoustic energy continues to dissipate.

[0068] Therefore, the embodiments disclosed herein include microresonator sensors that further incorporate a reflector ring. The reflector ring is an acoustic barrier that reflects acoustic energy (i.e., surface waves and / or volume waves) back to the diaphragm. Specifically, the reflector ring contains an acoustic impedance different from that of the medium through which the wave propagates (e.g., a capping layer, device layer, and / or substrate). This retains more acoustic energy and significantly improves the quality factor of the microresonator sensor.

[0069] Now for reference Figure 4A The figure shows a cross-sectional schematic diagram of a microresonator sensor 440 with a reflector ring 480 according to one embodiment. As shown, the microresonator sensor 440 includes a substrate 405, a device layer 407, and a cover layer 443. A resonator cavity 448 with a diaphragm 442 and an electrode 444 is also provided in the microresonator sensor 440. In one embodiment, the reflector ring 480 is disposed around the periphery of the resonator cavity 448. It should be understood that in Figure 4A Only one side of the resonant sensor 440 is shown. For example, the missing side could be... Figure 4A The mirror image of the side shown.

[0070] In one embodiment, the reflector ring 480 is made of a material with a different acoustic impedance than the material surrounding the reflector ring 480. In the illustrated embodiment, the reflector ring 480 contains a vacuum or air. That is, the reflector ring 480 is a cavity entering the device layer 407. Due to the acoustic impedance mismatch between the vacuum and the device layer 407, sound waves are reflected back toward the diaphragm 442. The efficiency of the reflection (i.e., the percentage of acoustic energy reflected) may depend on various factors. One factor is the difference in acoustic impedance at the interface. Another factor is the matching of the geometry of the reflector ring 480 to the desired wavelength at which reflection begins. For example, the reflector ring 480 may be large enough to interact with the sound waves. Additionally, the spacing of the reflector rings 480 can be selected such that the reflection of sound waves results in the establishment of one or more standing waves between the diaphragm 442 and the reflector ring 480. For example, the efficiency of the reflection may be approximately 80% or greater, approximately 90% or greater, or approximately 95% or greater. Although Figure 4A The reflector ring 480 in the diagram is shown as containing a vacuum or air in the cavity; however, it should be understood that other materials may also be used as the reflector ring, and the reflector ring may be located in different positions, as will be described in more detail below.

[0071] As schematically shown, reflector ring 480 reflects surface acoustic waves 491 to form reflected surface acoustic waves 493, and reflects bulk acoustic waves 492 to form reflected bulk acoustic waves 494. The reflected surface acoustic waves 493 and reflected bulk acoustic waves 494 are guided back to diaphragm 442.

[0072] Now for reference Figure 4B The image shows an acoustic energy diagram according to one embodiment, which depicts a structure consisting of a pair of reflector rings 480°. A and 480 B The sound waves 391 and 392 were reflected. Figure 4B For simplicity, only the device layer 407 is shown in the diagram. However, a similar diagram can be shown when the cover layer 443 and the substrate 405 are included. As shown, a first source of acoustic energy 490 is provided in the upper left corner of the diagram. The first source 490 represents the oscillating diaphragm 442. Although in Figure 4A Diaphragm 442 is shown as a resonator, but it should be understood that the first source 490 can represent any resonator that can be used in the microresonator sensor 440. Surface acoustic waves 491 and bulk acoustic waves 492 can propagate from the first source 490. A subset of the bulk wave 489 can propagate substantially downwards and generate a second source 490' at the lower left corner of the figure. Secondary surface waves 491' and secondary bulk waves 492' can propagate from the second source 490'.

[0073] As shown in the figure, each surface acoustic wave 491, secondary surface wave 491', bulk acoustic wave 492, and secondary bulk wave 492' is reflected by a reflector ring 480. Aand 480 B One of the sound energy is reflected. Therefore, most of the sound energy is reflected back to diaphragm 442 and forms a standing wave. The reflection results in an acoustic energy peak 485, which is isolated in the region between source 490 and reflector ring 480. Figure 3B This is a significant change compared to the acoustic energy diffusion and dissipation diagrams in the previous section. Local isolation of acoustic energy significantly improves the quality factor of the microresonator sensor 440. For example, by including one or more reflector rings 480, the quality factor can be improved by approximately 10 times or more.

[0074] Figure 4A The microresonator sensor shown herein represents an example of a microresonator sensor 440 according to an embodiment disclosed herein. Additional microresonator sensors with reflector rings having different positions, materials, and other configurations (described in more detail below) can also operate in substantially the same manner. That is, microresonator sensors according to some embodiments can reflect acoustic energy back toward the resonator to improve the quality factor of the microresonator sensor.

[0075] Now for reference Figure 5A The diagram shows a plan view of a microresonator sensor 540 according to one embodiment. In the illustrated embodiment, the device layer 507 is shown without a cover layer to provide an unobstructed view of the resonator cavity 548 and the reflector ring 580.

[0076] In one embodiment, the resonator cavity 548 can be of any suitable shape. Figure 5A A circular resonator cavity 548 is shown, but it should be understood that the resonator cavity 548 can take any suitable shape. For example, the resonator cavity 548 can be rectangular, square, polygonal, elliptical, or any other desired shape. The resonator cavity 548 is shown in a shade different from that of the device layer 507 to indicate that the resonator cavity 548 extends downward into the device layer 507.

[0077] In one embodiment, a reflector ring 580 surrounds the periphery of a resonator cavity 548. In some embodiments, the shape of the reflector ring 580 matches the shape of the resonator cavity 548. For example, a circular resonator cavity 548 is surrounded by a circular reflector ring 580. In other embodiments, the shape of the resonator cavity 548 may not match the shape of the reflector ring 580. For example, the resonator cavity 548 may be circular and the reflector ring 580 may be a rectangular frame. In one embodiment, the shadow of the reflector ring 580 differs from the shadow of the device layer 507 to indicate that the reflector ring 580 is a different material from the device layer 507. For example, the reflector ring 580 may be a vacuum or air (i.e., entering the cavity of the device layer 507) or a different solid material embedded in or located above and / or below the device layer 507.

[0078] Now for reference Figure 5B This shows the implementation of one method. Figure 5A A cross-sectional view of the microresonator sensor 540 along line 5-5'. In one embodiment, the microresonator sensor 540 may include a substrate 505, a device layer 507 above the substrate 505, and a cover layer 543 above the device layer 507. In one embodiment, the microresonator sensor 540 may include a resonator cavity 548 and a diaphragm 542 above the resonator cavity 548. However, it should be understood that the microresonator sensor 540 may replace the diaphragm 542 (or include any suitable resonator other than the diaphragm 542).

[0079] exist Figure 5B In this embodiment, the reflector ring 580 contains a vacuum or air. That is, the cavity is formed into the device layer 507. In some embodiments, the cavity may be partially covered by a cover layer 543. In one embodiment, the cavity of the reflector ring 580 may have a size D. The size D may be selected to provide the reflector ring 580 with desired reflection characteristics. For example, the size D may be λ / 4, where λ is the frequency of the acoustic energy to be reflected. Such a cavity may sometimes be referred to as a "quarter-wave cavity". In one embodiment, the distance L between the edge of the resonator cavity 548 and the inner edge of the reflector ring 580 may be selected to provide constructive interference when the reflected energy reaches the diaphragm 542. In the illustrated embodiment, the depth of the cavity of the reflector ring 580 may be substantially similar to the depth of the resonator cavity 548. For example, the bottom surface of the resonator cavity 548 may be substantially coplanar with the bottom surface of the reflector ring 580. However, other embodiments may include a resonator cavity 548 having a different depth than the cavity of the reflector ring 580.

[0080] Now for reference Figure 5C This shows an embodiment according to another method. Figure 5A Cross-sectional view of the micro-resonator sensor 540 along line 5-5'. Figure 5C The micro-resonator sensor 540 in the middle can be used with Figure 5B The microresonator sensor 540 is basically similar, except that a reflector ring 580 extends through the cover layer 543. The reflector ring 580 extending through the cover layer 543 provides a reflective interface for acoustic waves propagating along the cover layer 543.

[0081] Now for reference Figure 5D According to another embodiment, it is shown along Figure 5AThe image shows a cross-sectional view of the microresonator sensor 540 along line 5-5'. In one embodiment, the microresonator sensor 540 may include a reflector ring 580 disposed above the resonator cavity 548. In a particular embodiment, the reflector ring 580 is disposed above the top surface of the capping layer 543. In one embodiment, the reflector ring 580 may be a block of material. The material of the block of material may be a different material from that of the capping layer 543. Thus, an interface with mismatched acoustic impedance is provided to reflect surface acoustic waves back to the diaphragm 542.

[0082] Now for reference Figure 5E According to an additional embodiment, it is shown along Figure 5A The image shows a cross-sectional view of the microresonator sensor 540 along line 5-5'. In one embodiment, the microresonator sensor 540 may include a reflector ring 580 disposed below the resonator cavity 548. In a particular embodiment, the reflector ring 580 is disposed along the bottom surface of the substrate 505. The reflector ring 580 along the bottom surface of the substrate 505 is for reflecting sound from secondary sound sources (e.g., similar to...). Figure 4B The surface acoustic waves propagating from the second source (490') can be particularly useful. The embedded reflector ring 580 can also be beneficial for reflecting bulk waves propagating through the substrate 505.

[0083] Now for reference Figure 5F According to an additional embodiment, it is shown along Figure 5A The image shows a cross-sectional view of the microresonator sensor 540 along line 5-5'. In one embodiment, the microresonator sensor 540 may include a plurality of reflector rings 580. For example, a first reflector ring 580... A It can be on the top surface of the cover layer 543, and the second reflector ring 580 B It can be located at the bottom of substrate 505. Therefore, surface waves above the top and bottom surfaces can be reflected.

[0084] Now for reference Figure 5G According to an additional embodiment, it is shown along Figure 5AThe image shows a cross-sectional view of the microresonator sensor 540 along line 5-5'. In one embodiment, the microresonator sensor 540 may include a reflector ring 580 embedded in the device layer 507 and the capping layer 543. Extending the reflector ring 580 below the resonator cavity 548 allows for the reflection of bulk acoustic waves in addition to surface acoustic waves. In one embodiment, the embedded reflector ring 580 is a solid material. In other embodiments, the embedded reflector ring 580 may contain a vacuum or air. That is, the reflector ring 580 may include a cavity extending through both the capping layer 543 and the device layer 507. Furthermore, while the embedded reflector ring 580 extends to the interface between the device layer 507 and the substrate 505, in some embodiments, the embedded reflector ring 580 may also extend into (or completely through) the substrate 505.

[0085] Now for reference Figure 6 This shows a plan view of a microresonator sensor 640 according to an additional embodiment. Besides the second reflector ring 680... B 680 rings around the first reflector A In addition, Figure 6 The micro-resonator sensor 640 in the middle can be used with Figure 5A The microresonator sensor 540 is basically similar to that in the previous embodiment. In one embodiment, the first reflector ring 680 A Second reflector ring 680 B Both can surround the resonator cavity 648 in the device layer 607. Including an additional reflector ring 680 provides improved efficiency and a higher quality factor compared to a single reflector ring 680. Although two reflector rings 680 are shown... A and 680 B However, it should be understood that any number of reflector rings 680 can be used.

[0086] The quality factor of a microresonator sensor depends in part on the acoustic energy reflection efficiency. Reflection efficiency depends on the degree to which the reflector ring is adjusted to reflect a given frequency. Since the resonant frequency of the resonator varies with the processing of the device's capping layer (e.g., etching, deposition, polishing, etc.), it is desirable to be able to adjust the reflector ring. In some embodiments, the reflector ring can be adjusted in real time during the capping layer processing. In other embodiments, the reflector ring can be adjusted before or after the capping layer processing.

[0087] Now for reference Figure 7A The image shows a cross-sectional view of a microresonator sensor 740 with an adjustable reflector ring 780 according to one embodiment. In one embodiment, the microresonator sensor 740 may include a substrate 705, a device layer 707, and a cover layer 743. A resonator cavity 748 having electrodes 744 and a diaphragm 742 is also included in the microresonator sensor 740.

[0088] In one embodiment, the reflector ring 780 includes a vacuum or air cavity within the device layer. As shown, the cavity of the reflector ring 780 includes a dimension D. In one embodiment, dimension D is adjusted by an actuator 762. For example, the actuator 762 can expand and contract (as indicated by the arrow) to change the dimension D of the reflector ring 780. In one embodiment, the actuator 762 is a piezoelectric or piezothermal actuator. Other suitable types of actuators can be used to change the dimension D of the reflector ring 780. Additionally, although dimension D is shown as the width of the reflector ring 780, dimension D may also include a thickness. Embodiments may also include using one or more actuators to change more than one dimension of the reflector ring 780.

[0089] Now for reference Figure 7B The image shows a cross-sectional view of a microresonator sensor 740 with an adjustable reflector ring 780 according to an additional embodiment. In one embodiment, the reflector ring 780 is shown as a block of material embedded in a device layer 707. In one embodiment, the reflective properties (i.e., impedance) of the material block of the reflector ring 780 can be adjusted by changing the density and / or modulus of the material. In some embodiments, the density and / or modulus can be adjusted by locally changing the temperature of the reflector ring 780. For example, embodiments may include a heater 763. In some embodiments, the reflector ring 780 may contain a phase change material. Heating the phase change material can cause a phase change that alters the impedance of the reflector ring 780. The heater 763 may be embedded in the device layer 707 below the reflector ring 780. The heater 763 may also be embedded in a cover layer 743 above the reflector ring 780.

[0090] Now for reference Figure 7C This shows a plurality of reflector rings 780 according to one embodiment. A-C A cross-sectional view of the microresonator sensor 740. In one embodiment, the reflector ring 780... A-C The reflective properties of the cladding layers 743 can be adjusted by displacing a portion of them. For example, a portion 764 of the cladding layer 743 can be displaced downwards into the cavity of the reflector ring 780. For example, the portion 764 of the cladding layer 743 can be displaced using electrostatic force. Figure 7C In the middle, the second reflector ring 780 B It is shown as being actuated, but implementations include actuating any number of reflector rings 780 to provide the desired reflective characteristics.

[0091] It should be understood that Figures 7A-7C Each adjustment scheme can be implemented in real time. That is, the reflector ring (or multiple reflector rings) 780 can be adjusted during the processing of the overlay.

[0092] Now for reference Figure 7DThe image shows a cross-sectional view of a microresonator sensor 740 having a reflector block 765 above a reflector ring 780 according to one embodiment. In one embodiment, the reflector block 765 can be deposited above the reflector ring 780 via any suitable deposition process. Adding the reflector block 765 locally alters the average density and / or modulus near the reflector ring 780 to change the reflection characteristics (i.e., impedance) of the reflector ring 780. For example, the reflector block 765 can be a different material than the capping layer 743.

[0093] Now for reference Figure 7E According to one embodiment, a cross-sectional view of a microresonator sensor 740 having a plurality of holes 766 passing through a capping layer 743 is shown. The plurality of holes 766 change the effective modulus and effective density of the capping layer 743 above a reflector ring 780, thereby altering the reflection characteristics (i.e., impedance) of the reflector ring 780. The number and size of the holes can be varied to provide desired reflection characteristics. In one embodiment, the holes 766 may be formed by patterning and etching processes.

[0094] Now for reference Figure 8A The image shows a plan view of a microresonator sensor 840 according to an additional embodiment. The microresonator sensor 840 may include a ring resonator 890 formed into a device layer 807. For clarity, a cover layer has been omitted. The ring resonator 890 may be a ring or any other desired shape. The ring resonator 890 surrounds a portion of the device layer 807. The use of the ring resonator 890 allows for limiting the acoustic energy 891 propagating from the inner surface of the ring resonator 890 to improve the quality factor.

[0095] Now for reference Figure 8B This shows the implementation of one method. Figure 8A A cross-sectional view of the microresonator sensor 840 along line 8-8'. The microresonator sensor 840 may include a substrate 805, a device layer 807 above the substrate 805, and a capping layer 843 above the device layer 807. The capping layer 843 may include a diaphragm 842 spanning a ring resonator 890 and serving as a resonator. In one embodiment, the ring resonator 890 may include a driver and a sensor (e.g., an electrode 844) for driving and sensing the resonance of the diaphragm 842. In some embodiments, a via 813 or other interconnect may be electrically coupled to the electrode 844.

[0096] In the illustrated embodiment, the ring resonator 890 includes a cavity formed in the device layer 807. The cavity provides space for the diaphragm 842 to oscillate. Furthermore, because the cavity of the ring resonator 890 has a different acoustic impedance than the device layer 807 and the cover layer 843, acoustic energy propagating from the inner edge of the ring resonator is reflected back and confined to provide an increased quality factor.

[0097] Now for reference Figure 8C This shows a plan view of a microresonator sensor 840 having a ring resonator 890 and a reflector ring 880 according to one embodiment. Similar to... Figure 8A In the implementation described, the ring resonator 890 restricts the acoustic energy 891 propagating from the inner surface of the ring resonator 890. Furthermore, the reflector ring 880 surrounding the ring resonator 890 reflects and restricts the acoustic energy 892 propagating from the outer surface of the ring resonator 890. Therefore, more acoustic energy is retained (compared to...). Figure 8A Compared to the implementation described above, the quality factor is improved. The reflector ring 880 can be substantially similar to the reflector ring according to the above embodiment.

[0098] Now for reference Figure 9 The flowchart in the diagram, according to one embodiment, shows and describes a method for determining processing parameters for a processing operation. In one embodiment, processing 970 may begin with operation 971, which includes processing a diagnostic substrate. In one embodiment, the diagnostic substrate may include one or more microresonator sensors according to embodiments such as those described above. For example, the microresonator sensor may include a resonator and a reflector ring surrounding the resonator. In one embodiment, the processing may include processing of a capping layer. For example, a pattern may be etched into a portion of the capping layer (e.g., on a diaphragm of the microresonator sensor). However, it should be understood that the processing operation may be any processing operation being investigated using the diagnostic substrate. For example, the processing operation may be an etching process, a deposition process, a polishing process, an implantation process, or any other process that alters the morphology of the capping layer.

[0099] Referring now to operation 972, process 970 can continue by driving the resonator to multiple resonant modes by applying a drive signal to the microresonator. For example, the drive signal may include a frequency sweep (also known as a “chirp”), a ping, or the like. The drive signal causes oscillations in the resonator. The oscillations of the resonator can be sensed by a sensing circuit block. For example, the oscillations may cause a change in impedance in the circuit (e.g., when using a chirp), or the oscillations may simply be counted (e.g., when using a ping). In one embodiment, the resonator can be driven to multiple resonant modes using electrodes in a microresonator sensor. In a particular embodiment, the resonator can be driven to a first resonant mode, a second resonant mode, and a third resonant mode. In one embodiment, acoustic waves (e.g., surface acoustic waves and / or bulk acoustic waves) propagating from the resonator can be reflected back to the resonator by a reflector ring.

[0100] Referring now to operation 973, processing 970 can continue to record the resonant frequency of each of the multiple resonant modes. In one embodiment, the resonant frequency of each resonant mode can be recorded in the local memory of the diagnostic substrate. In an additional embodiment, the resonant frequency can be transferred to external memory (e.g., using a wireless communication module on the diagnostic substrate).

[0101] Referring now to operation 974, process 970 can continue by determining processing parameters from multiple resonant frequencies. In one embodiment, processing parameters may include etch depth, trench width, trench wall profile, thickness of the deposited layer, or any other variation in the capping layer. Processing parameters can be determined using a model of multiple resonant frequencies and the moment of inertia for each bending direction of the resonant mode, similar to the above regarding... Figure 2C The described process.

[0102] The implementation method can continue to adjust the processing formula of the processing operation. For example, temperature, pressure, airflow, or the like can be changed. The ability to modify the processing formula in situ can achieve greater improvements to the processing operation and provide more information about the processing operation.

[0103] The implementation can continue until an endpoint is reached. For example, the endpoint could be a desired time, a desired processing parameter, or any other desired criterion. If the endpoint has not been reached, the process can continue to repeat the processing operation until the endpoint criterion is reached.

[0104] As mentioned above, the ability to determine treatment parameters in situ allows for the determination of the rate of change of those parameters. Therefore, more detail about the treatment being studied can be obtained compared to information obtained by performing measurements after the treatment is completed.

[0105] Furthermore, it should be understood that processing 970 can be implemented using multiple microresonator sensors formed on the surface of the diagnostic substrate. For example, tens of thousands of microresonator sensors in each of multiple sensing regions of the diagnostic substrate can be used in parallel to obtain information on the uniformity of the processing operation. In such an implementation, operation 974 may further include finding the average value of the processing parameters in each sensing region. High accuracy and high resolution are achieved by a large number of microresonator sensors in each sensing region due to the favorable signal-to-noise ratio obtained by processing the information obtained from each microresonator.

[0106] In other embodiments, a difference comparison of the resonant frequencies of paired microresonator sensors can be implemented. For example, this difference comparison can be used to determine the temperature, surface potential, and / or pressure of a covering surface. This difference comparison can be achieved using a pair of microresonator sensors, where one microresonator sensor acts as a control to isolate one or more variables. For example, in the case of surface potential, a bias voltage can be applied to the first microresonator, and the second microresonator sensor can be short-circuited (i.e., no bias voltage is applied) to isolate the surface potential variable.

[0107] Now for reference Figure 10 This diagram illustrates a block diagram of an exemplary computer system 1060 of a processing tool according to one embodiment. In one embodiment, the computer system 1060 is coupled to and controls processing within the processing tool. The computer system 1060 may be connected (e.g., networked) to other machines in a local area network (LAN), intranet, extranet, or the Internet. The computer system 1060 may operate as a server or client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 1060 may be a personal computer (PC), tablet PC, set-top box (STB), personal digital assistant (PDA), cellular phone, web device, server, network router, switch, or bridge, or any machine capable of executing a set of instructions (sequentially or otherwise) specifying the operations to be performed by the machine. Furthermore, although only a single machine is shown for computer system 1060, the term "machine" should also be considered to include any collection of machines (e.g., computers) that individually or collectively execute a set (or more) of instructions to perform any one or more of the methods described herein.

[0108] Computer system 1060 may include a computer program product (or software 1022) having a non-transitory machine-readable medium on which instructions are stored, which can be used to program computer system 1060 (or other electronic device) to perform processing according to an embodiment. Machine-readable medium includes any mechanism for storing or transmitting information in a machine-readable (e.g., computer-readable) form. For example, machine-readable (e.g., computer-readable) media include machine-readable storage media (e.g., read-only memory (“ROM”), random access memory (“RAM”), disk storage media, optical storage media, flash memory devices, etc.), machine-readable transmission media (electrical, optical, acoustic, or other forms of propagated signals (e.g., infrared signals, digital signals, etc.)), etc.

[0109] In one embodiment, the computer system 1060 includes a system processor 1002, a main memory 1004 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) (such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM)), a static memory 1006 (e.g., flash memory, static random access memory (SRAM)), and an auxiliary memory 1018 (e.g., a data storage device), which communicate with each other via a bus 1030.

[0110] System processor 1002 represents one or more general-purpose processing devices, such as microsystem processors, central processing units, or the like. More specifically, the system processor may be a Complex Instruction Set Computing (CISC) microsystem processor, a Reduced Instruction Set Computing (RISC) microsystem processor, a Very Long Instruction Word (VLIW) microsystem processor, a system processor implementing other instruction sets, or a system processor implementing combinations of instruction sets. System processor 1002 may also be one or more special-purpose processing devices, such as application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), digital signal system processors (DSPs), network system processors, or the like. System processor 1002 is configured to execute processing logic 1026, which performs the operations described herein.

[0111] The computer system 1060 may further include a system network interface device 1008 for communicating with other devices or machines. The computer system 1060 may also include a video display unit 1010 (e.g., a liquid crystal display (LCD), a light-emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 1012 (e.g., a keyboard), a cursor control device 1014 (e.g., a mouse), and a signal generation device 1016 (e.g., a speaker).

[0112] Auxiliary storage 1018 may include machine-accessible storage medium 1031 (or more specifically, computer-readable storage medium) storing one or more sets of instructions (e.g., software 1022) embodying any one or more of the methods or functions described herein. During execution of software 1022 by computer system 1060, software 1022 may also reside wholly or at least partially within main memory 1004 and / or system processor 1002, which also constitute machine-readable storage media. Software 1022 may be further transmitted or received on network 1020 via system network interface device 1008. In one embodiment, network interface device 1008 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling.

[0113] Although the machine-readable storage medium 1031 is shown as a single medium in the exemplary embodiment, the term "machine-readable storage medium" should be considered to include single or multiple media (e.g., centralized or distributed databases and / or associated caches and servers) for storing one or more sets of instructions. The term "machine-readable storage medium" should also be considered to include any medium capable of storing or encoding a set of instructions for execution by a machine and causing the machine to perform any one or more methods. Therefore, the term "machine-readable storage medium" should be considered to include (but is not limited to) solid-state memory as well as optical and magnetic media.

[0114] Specific exemplary embodiments have been described in the foregoing specification. It will be apparent that various modifications may be made thereto without departing from the scope of the appended claims. Therefore, the specification and drawings should be considered illustrative rather than restrictive.

Claims

1. A diagnostic substrate, comprising: substrate; Device layer, on the substrate; A resonator, in the device layer, wherein the resonator comprises: cavity; A covering layer is placed over the cavity; and Multiple electrodes are located within the cavity for driving and sensing the resonance of the covering layer; and a reflector surrounding the resonator, wherein the reflector is configured to be adjusted to reflect different frequencies, wherein adjusting the reflector includes changing the size of the cavity of the reflector, wherein the size is changed by an actuator.

2. The diagnostic substrate of claim 1, wherein the reflector is a quarter-wavelength cavity reflector.

3. The diagnostic substrate of claim 1, wherein the reflector is embedded in the device layer.

4. The diagnostic substrate of claim 1, wherein the bottom surface of the cavity and the bottom surface of the reflector are at the same Z height in the device layer.

5. The diagnostic substrate of claim 1, wherein the reflector is above the top surface of the device layer.

6. The diagnostic substrate of claim 1, wherein the reflector is below the bottom surface of the cavity.

7. The diagnostic substrate of claim 1, further comprising: A second reflector surrounds the periphery of the first reflector.

8. The diagnostic substrate of claim 1, wherein adjusting the reflector comprises changing the density or modulus of the material in the reflector.

9. The diagnostic substrate of claim 8, further comprising: A heater, located near the reflector.

10. The diagnostic substrate of claim 1, wherein the reflector comprises a phase change material.

11. A diagnostic substrate, comprising: substrate; A device layer on the substrate, wherein the device layer has a first impedance; A ring resonator having a second impedance, wherein the ring resonator surrounds at least a portion of the device layer; Multiple drivers and multiple sensors are configured to detect resonance; and A reflector surrounding the ring resonator.

12. The diagnostic substrate of claim 11, wherein the ring resonator is a cavity entering the device layer.

13. A method for determining processing parameters, comprising: A diagnostic substrate is processed, wherein the diagnostic substrate includes a resonator and a reflector surrounding the resonator; The resonator is driven to multiple resonant modes, wherein sound waves propagating from the resonator are reflected back to the resonator by the reflector; For each of the resonant modes, the resonant frequency of the resonator is recorded; and The processing parameters are determined from the resonant frequencies of the plurality of resonant modes. The reflector is configured to be adjusted to reflect different frequencies, wherein adjusting the reflector includes changing the size of the cavity of the reflector, wherein the size is changed by an actuator.

14. The method of claim 13, wherein the step of driving the resonator to a plurality of oscillation modes comprises: applying a drive signal that is chirped or checked.

15. The method of claim 13, wherein the plurality of resonant modes includes at least a first resonant mode and a second resonant mode, and wherein the first resonant mode is parallel to the direction of the plurality of grooves above the resonator, and the second resonant mode is perpendicular to the plurality of grooves.

16. The method of claim 13, wherein the resonator is driven in situ to a plurality of resonant modes in a chamber, in a loading lock chamber, in a mobile test device, or in a non-vacuum environment.

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