Ultra-Thin Conformal Coatings for Electrostatic Dissipation in Semiconductor Processing Tools

Abstract

In some embodiments, a chamber component (e.g., an end effector body) is disclosed that is coated with an ultrathin electrically dissipative material to provide a dissipative path from the coating to ground. The coating can be deposited via chemical precursor deposition to provide a uniform, conformal, and void-free coating in a cost-effective manner. In one embodiment where the chamber component includes an end effector body, the end effector body can further include a replaceable contact pad for supporting a substrate, and the contact surface of the contact pad head can also be coated with the electrically dissipative material.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to coated semiconductor process tools (e.g., devices used to transport objects within a processing system), electrically dissipative coatings, and methods for depositing such coatings. In certain embodiments, the present disclosure relates to end effectors of robotic arms coated with electrically dissipative materials. Background Art

[0002] In electronic device manufacturing, substrates (e.g., silicon-containing wafers, silicon-containing boards) can be moved around a manufacturing facility and within manufacturing equipment tools by robotic arms. The robotic arms can include robotic arms having one or more end effectors coupled thereto that can contact and support the substrate during such transport. The end effectors include contact pads thereon that provide elevated contact surfaces on which the substrate is supported. Summary of the Invention

[0003] In certain embodiments, the present disclosure may be directed to a coated chamber component comprising a chamber component and a coating deposited on a surface of the chamber component. In certain embodiments, the coating may comprise an electrically dissipative material. The electrically dissipative material may provide a dissipative path from the coating to ground. The coating may be uniform, conformal, and free of pores. The coating may have a thickness ranging from about 10 nm to about 900 nm and a surface area ranging from about 1 x 10 5 Ohm / square to about 1x10 11 Surface / sheet resistance in ohms / square.

[0004] In certain embodiments, the present disclosure may be directed to a method comprising depositing a coating onto a surface of a chamber component using an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, a plasma enhanced atomic layer deposition (PEALD) process, a metal organic chemical vapor deposition (MOCVD), or a molecular beam epitaxy (MBE) process. The coating may include an electrically dissipative material. The electrically dissipative material may provide a dissipative path from the coating to ground. The coating may be uniform, conformal, and free of pores, having a thickness ranging from about 10 nm to about 900 nm, and a thickness ranging from about 1 x 10 5 Ohm / square to about 1x10 11 Surface / sheet resistance in ohms / square.

[0005] In certain embodiments, the present disclosure may be directed to an electrically dissipative coating comprising an electrically dissipative material. The coating may be uniform, conformal, and free of pores, having a thickness ranging from about 10 nm to about 900 nm, and a surface area ranging from about 1 x 10 5Ohm / square to about 1x10 11 Surface / sheet resistance in ohms / square.

[0006] In certain embodiments, the present disclosure may be directed to an end effector for a robotic arm. The end effector may include an end effector body and a coating deposited on a surface of the end effector body. The coating may include an electrically dissipative material. The electrically dissipative material may provide a dissipative path from the coating to ground. The coating may be uniform, conformal, and free of pores. The coating may have a thickness ranging from about 10 nm to about 900 nm. The coating may have a thickness ranging from about 1 x 10 5 Ohm / square to about 1x10 11 Surface / sheet resistance in ohms / square.

[0007] In certain embodiments, the present disclosure may relate to a method. The method may include depositing a coating onto a surface of an end effector of a robotic arm using an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, a plasma enhanced atomic layer deposition (PEALD) process, a metal organic chemical vapor deposition (MOCVD), or a molecular beam epitaxy (MBE) process. The coating may include an electrically dissipative material. The electrically dissipative material may provide a dissipative path from the coating to ground. The coating may be uniform, conformal, and free of pores. The coating may have a thickness ranging from about 10 nm to about 900 nm. The coating may have a thickness ranging from about 1 x 10 5 Ohm / square to about 1x10 11 Surface / sheet resistance in ohms / square.

[0008] In certain embodiments, the present disclosure may relate to a substrate processing system. The substrate processing system may include a chamber, a robot disposed in the chamber, and a robot arm connected to the robot arm. The robot arm may include a terminal effector body, a replaceable contact pad, and a coating. The replaceable contact pad may be disposed on the terminal effector body. The replaceable contact pad may include: a contact pad head having a contact surface configured to contact a substrate; and a shaft coupled to the contact pad head and received in a hole formed in the body of the terminal effector and extending into a recess. The coating may be deposited on a surface of the terminal effector body and on the contact surface of the contact pad head. The coating may include an electrically dissipative material. The electrically dissipative material may provide a dissipative path from the coating to ground. The coating may be uniform and conformal. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The present disclosure is illustrated by way of example and not limitation in the figures of the accompanying drawings in which like reference numerals indicate similar elements. It should be noted that different references to "one" or "an" embodiment in this disclosure are not necessarily to the same embodiment, and such references mean at least one.

[0010] Figure 1 A perspective view is shown of an example of an end effector including one or more contact pads provided in accordance with one embodiment of the present disclosure.

[0011] Figure 2 Depicted is a side view of a coated end effector body according to one embodiment of the present disclosure.

[0012] Figure 3 A portion of an end effector including a replaceable contact pad according to an embodiment of the present disclosure is shown along Figure 1 Partial cross-sectional view taken at section 2A-2A.

[0013] Figure 4 An atomic layer deposition process is depicted according to an embodiment of the present disclosure, which may be used to coat an end effector body of a robot arm or another chamber component.

[0014] Figure 5 An exemplary chamber for a chemical vapor deposition process, which may be used to coat an end effector body of a robot arm or another chamber component, is depicted in accordance with an embodiment of the present disclosure.

[0015] Figure 6 A schematic top view of an electronic device manufacturing apparatus including a transfer robot having an end effector with replaceable contact pads that can be coated together is shown in accordance with one or more embodiments of the present disclosure.

[0016] Figure 7A Depicted is an EDS line scan of a coating according to one embodiment of the present disclosure.

[0017] Figure 7B depiction Figure 7A TEM image of the coating depicted in FIG at a 50 nm scale.

[0018] Figure 8 The surface / sheet resistance of a coating according to one embodiment is plotted as a function of pressure.

[0019] Figure 9A and 9BImages of the front and back of an exemplary end effector coated with a coating according to one embodiment are depicted, respectively. The sheet resistance values measured in each of the identified locations are summarized in Table 1.

[0020] Figure 10A and 10B Images of the front and back of an exemplary bulk-doped ceramic terminal effector are depicted, respectively. The sheet resistance values measured in each of the identified locations are summarized in Table 2. DETAILED DESCRIPTION

[0021] In the electronics manufacturing process, substrates (e.g., silicon wafers, boards containing silicon, etc.) configured to produce electronic components (e.g., electronic chips or their electronic subcomponents) are typically moved through various manufacturing steps using one or more robotic arms. The robotic arms include end effectors that support the substrates during such movement. Very rapid movement of the substrates can increase production throughput and reduce the manufacturing cost of the produced electronic components.

[0022] However, rapidly moving the robot while transporting substrates can also generate charged particles that can accumulate on surfaces and, in turn, cause substrate defects. Such substrate defects can be minimized by coating surfaces prone to charging, such as the robot's end effector, with an electrically dissipative coating. An electrically dissipative coating can help release charge from the surface, allowing particles to escape van der Waals forces and redistribute. An electrically dissipative coating can also support electrostatic discharge and prevent arcing and other unexpected conductive events between charged chamber component surfaces (such as the charged end effector body) and / or wafers thereon and other system components.

[0023] The present disclosure includes various embodiments relating to electrically dissipative coatings, methods for depositing such electrically dissipative coatings, chamber components coated with the electrically dissipative coatings, end effector bodies coated with the electrically dissipative coatings, and substrate processing systems utilizing components coated with such electrically dissipative coatings, such as chamber components and / or substrate transport components (e.g., end effectors). In some embodiments, the electrically dissipative coating is also a plasma resistant coating.

[0024] The coating processes described herein can be advantageous and cost-effective because they can utilize more readily available bare chamber components (e.g., end effector bodies), face fewer manufacturing and yield issues, have shorter lead times, etc. Furthermore, multiple chamber components (e.g., multiple end effector bodies) can be coated simultaneously (e.g., by inserting multiple end effector bodies into an ALD, CVD, PEALD, MOCVD, or MBE deposition chamber for simultaneous coating). The resulting coatings can also be more uniform, more conformal, have lower porosity, be stronger, maintain their integrity longer (even under extreme conditions such as vacuum, thermal shock, thermal cycling, etc.), and have narrower surface / sheet resistivity distributions than chamber components manufactured by other processes (e.g., bulk ceramic doping processes and slurry-based coating processes).

[0025] In an exemplary embodiment, the present disclosure may be directed to a component for transporting substrates and coated with a coating having certain properties. In one embodiment, the component for transporting substrates may be an end effector of a robotic arm. The coating may have dissipative properties and may include electrically dissipative materials to provide an electrically dissipative path from the coating to ground. The coating may be uniform, conformal, and free of pores. The coating may have a thickness ranging from about 10 nm to about 900 nm (e.g., about 20 nm to about 500 nm). The coating may have a thickness ranging from about 1 x 10 5 Ohm / square to about 1x10 11 Surface / sheet resistance in ohms / square.

[0026] The body of the component for transporting substrates may comprise an insulator or a conductor, such as, but not limited to, ceramics, conductive materials (e.g., metals), polymers, quartz, and the like. In one embodiment, the body of the component for transporting substrates may comprise a material suitable for high temperature processes, such as quartz. Quartz may be suitable for high temperature processes due to its transparency, which allows radiation to pass through the quartz while minimizing the thermal impact on the transported substrate. The coating deposited on the component may maintain some of the properties of the construction material of the component below. For example, the coating may maintain the transparency of the quartz component below to maintain minimal thermal impact on the substrate. In certain embodiments, the coating deposited on the component may have certain properties that are independent of the properties of the construction material of the component below. For example, the resistivity properties of the coating may be independent of the component below.

[0027] The coating may be a double layer stack or a stack of multiple staggered layers. The coating may include a variety of materials and may be selected based on the target properties of the final coating (e.g., electrical dissipation properties, transparency, thermal conductivity, corrosion resistance, hardness, thermal shock resistance, thermal cycling resistance, vacuum resistance, scratch adhesion, wear rate, purity, roughness, conformality, etc.), among other factors. In certain embodiments, the coating may include a stack of alternating layers of layers containing a first material and layers containing a second material. The thickness ratio of the thickness of each layer containing the first material to the thickness of each layer containing the second material may range from about 50:1 to about 1:50. In one embodiment, the double layer stack or alternating layer stack may include one or more of aluminum oxide and titanium oxide. The thickness ratio of the thickness of each aluminum oxide layer to the thickness of each titanium oxide layer may range from about 10:1 to about 1:10.

[0028] In certain embodiments, the component used to transport substrates and to be coated can be an end effector. The end effector body can include replaceable contact pads thereon to reduce and / or eliminate the risk of substrates sliding off the end effector surface during transport. In one embodiment, the replaceable contact pads and the end effector can be coated with any of the coatings described herein using any of the coating methods described herein. Alternatively or additionally, the replaceable contact pads can be composed of an electrically dissipative material.

[0029] The coatings described herein can be deposited via an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, a plasma enhanced atomic layer deposition (PEALD) process, a metal organic chemical vapor deposition (MOCVD) process, a molecular beam epitaxy (MBE) process, and other similar chemical precursor deposition processes. Coatings comprising more than one layer and / or more than one metal can be deposited by sequential deposition, by co-deposition, or by co-dosing of precursors.

[0030] In the present disclosure, ALD (and optionally CVD, PEALD, MOCVD, and / or MBE) may be suitable deposition methods due to their ability to uniformly and conformally coat components with complex three-dimensional features, voids, large aspect ratios, and the like. Furthermore, using these coating processes, multiple bare components (e.g., end effectors) that have not yet been coated (e.g., bare bulk alumina that has not yet been doped with titania) can be placed in a deposition chamber and coated simultaneously. Among other factors, the relatively inexpensive starting materials, the ability to coat multiple chamber components simultaneously, and the flexibility and ability to optimize the coating process provide for a more cost-effective process and ultimately, more affordable coated components.

[0031] As used herein, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a wafer" includes a single wafer as well as a mixture of two or more wafers; and reference to "a metal" includes a single metal as well as a mixture of two or more metals, and so forth.

[0032] As used herein, the term "about" in conjunction with a measured quantity refers to the normal variation of the measured quantity that would be expected by one of ordinary skill in the art when making the measurements and exercising a level of care commensurate with the precision of the measurement target and the measurement equipment. In certain embodiments, the term "about" includes ±10% of the recited number, such that "about 10" would include from 9 to 11.

[0033] The description of the range of values herein is intended only to serve as a shorthand method for individually representing each individual value falling within the range, unless otherwise indicated herein, and each individual value is incorporated into this specification as if the value were individually recorded herein. Unless otherwise indicated herein or clearly contradicted by the context, all methods described herein can be performed in any suitable order. The use of any and all examples, or exemplary language (e.g., "for example") provided herein is intended only to illustrate certain materials and methods and is not intended to limit the scope. All language in this specification should not be interpreted as indicating any unclaimed element as being necessary for the practice of the disclosed materials and methods.

[0034] As used herein, the term "plasma resistant" means resistant to one or more plasmas and resistant to chemical species and radicals associated with the one or more plasmas.

[0035] Certain embodiments are discussed herein with reference to end effectors coated with an electrically dissipative coating. However, it should be understood that the electrically dissipative coatings described in the embodiments herein may also be used to coat other components of processing chambers, transfer chambers, factory interface chambers, load lock chambers, load ports, slit valves, and the like. Thus, the electrically dissipative coatings described herein may be used to coat any component of an electronic device processing tool or system. Some examples of such components include substrate support assemblies, electrostatic chucks, gas delivery plates, covers, nozzles, liners, rings (e.g., process accessory rings or single rings), bases, showerheads, gas lines, liner accessories, shields, plasma screens, flow equalizers, cooling bases, chamber viewports, chamber covers, and the like.

[0036] Figure 1 A first example embodiment of a chamber component that may be coated with the electrically dissipative coating described herein is depicted. Figure 1In FIG. 1 , an exemplary chamber component is an end effector 100 configured to support a substrate 101 (a portion of which is shown in phantom). The end effector 100 may be comprised of an end effector body 102 having a top surface 102T ( Figure 2 ) and bottom surface 102B. Top surface 102T may include a plane including three facets that protrude above lower flat surface 102PS of end effector body 102. End effector body 102 may be configured to mate with a robotic hand component (e.g., robotic arm (e.g., robotic wrist 653, see Figure 6 )) are coupled or interconnected. Coupling can be performed via fasteners (not shown) received through the apertures 105, thereby coupling the end effector 100 to the robotic arm (e.g., wrist 653). The end effector 100 can be coupled directly to the wrist member 653, or through an intermediate component (e.g., mounting plate 654 ( Figure 6 )) is coupled to the wrist member 653 to reduce its breakage when the end effector 100 is made of ceramic or glass material.

[0037] The outboard end 104O of the end effector body 102 may include a first prong 107A and a second prong 107B, each of which may be configured to receive and support a contact pad 108 thereon. In some embodiments, the contact pad 108 is comprised of or coated with an electrically dissipative material. The contact pad 108 on the outboard end 104O and a third contact pad 108 near the inboard end 104I may provide a stable three-point contact to support the substrate 101 thereon ( Figure 1 and 2 Only a portion of substrate 101 is shown in the figure. Substrate 101 can be supported on contact pads 108 of end effector 100 between inner shelf 109I (which can be an arcuate step with a radius approximately the same as substrate 101) and outer shelf 109O. The spacing between respective inner shelf 109I and outer shelf 109O can be slightly larger (e.g., a few mm) than substrate 101, where dimension 111 can be a diameter slightly larger than 300 mm, 450 mm, or other dimensions of substrate 101, for example. Other configurations of end effector body 102 than those shown can be used. In embodiments, end effector 102 and / or contact pads 108 can be coated with an electrically dissipative coating.

[0038] Figure 2 1 is a side view of an exemplary end effector body 102 depicting a bottom surface 102B, a top surface 102T, an inner shelf 109I, an outer shelf 109O, and a coating 200 deposited on the top surface 102T. The dimensions of the end effector body 102 and the coating 200 may not be to scale and are depicted for illustration purposes only. Figure 2 The contact pad 108 is not depicted in FIG. Figure 2 Although the coating 200 is described herein as being deposited on the top surface (102T) of the end effector body 102, the coating 200 may also be deposited on the top surfaces of other chamber components, even if not explicitly described herein. Exemplary chamber components that may be coated with the electrically dissipative coating 200 may include transfer chambers, factory interface chambers, load lock chambers, load ports, slit valves, and the like.

[0039] The end effector body 102 can be made of a rigid material. In some embodiments, the end effector body 102 can be made of a stable, lightweight material that reduces deflection of the end effector under chamber processing conditions, including changes in pressure and temperature. Suitable, non-limiting materials for the end effector body 102 include insulating or conductive materials, such as, but not limited to, polymers, glass, quartz, ceramics, or conductive materials (e.g., metallic materials).

[0040] For example, ceramics such as bulk alumina can be used. In some embodiments, suitable ceramics can be semi-conductive to facilitate the discharge of any electrostatic charge that may accumulate on the substrate. Other semi-conductive ceramic materials include, for example, alumina-SiC composites, SiC, silicon nitride, boron nitride, and boron. In certain embodiments, the coating 200 disclosed herein contributes to the semi-conductive properties of the coated end effector body (or any coated chamber component). The semi-conductive properties can avoid high electrical conductance that could cause arcing between the coated chamber component (e.g., the end effector) and other system components. These semi-conductive properties can also be achieved via the coating 200 as described in further detail below.

[0041] Optionally, the end effector body 102 can comprise a conductive material, such as a metal. For example, exemplary suitable conductive materials can include, but are not limited to, stainless steel, aluminum, nickel, copper, chromium, cobalt, molybdenum, ruthenium, tungsten, or platinum. Other suitable metals or alloys (e.g., aluminum alloy Al6061) can also be used. The conductive end effector body (or another conductive chamber component) can also be coated with the coating 200 to produce a coated end effector body (or another coated chamber component) having electrically dissipative properties and can be capable of supporting electrostatic discharge and preventing arcing and sudden conductive events between the end effector (or other chamber component) and / or wafers thereon and / or other system components.

[0042] The term "semiconductive" as used herein is intended to include a bulk material of a particular component that exhibits semiconductive electrical properties, as well as a conductive or nonconductive bulk material that is rendered semiconductive, for example, by a coating of a semiconductive material or other semiconductive electrical path (e.g., a wire, layer, ribbon, line, or other electrical passage) disposed on or through the conductive or nonconductive bulk material. Similarly, the term "conductive" as used herein is intended to include a conductive bulk material or a semiconductive or nonconductive material that is rendered conductive by a conductive coating or conductive electrical path formed through or on the semiconductive or nonconductive material.

[0043] In some embodiments, the end effector 100 can be used at temperatures between 150°C and 650°C. During high temperature thermal processes, there can be significant heat transfer between the end effector and the adjacent wafer. The thermal shock associated with the heat transfer from the alumina end effector to the wafer can damage the wafer. In contrast, using a transparent end effector (e.g., one comprising quartz) does not transfer such severe thermal shock. The reduced thermal shock observed with quartz end effectors is believed to be due to quartz not being as thermally conductive as ceramics (e.g., alumina) and due to quartz being transparent, which allows radiation to pass through it (compared to opaque ceramic materials such as alumina).

[0044] In certain embodiments, because quartz produces minimal heat shadow (in other words, quartz has minimal thermal impact on the wafer), quartz can be used as a construction material for end effectors used to transport substrates for high-temperature thermal processes. Similarly, quartz can be used as a construction material for other chamber components that would benefit from its minimal thermal impact. In such embodiments, the coating can be transparent to maintain the beneficial properties of the quartz end effector or any other quartz chamber component.

[0045] In some aspects, it may be advantageous to have the coating maintain properties similar to those of the underlying component's construction material (e.g., transparency). In other aspects, it may be advantageous to have certain properties of the coating (e.g., resistivity) be independent of the properties of the underlying component's construction material.

[0046] The rapid movement of the robot while transporting substrates can generate particles. It is believed that electrostatic charge and the affinity of particles that cause them to accumulate on charged surfaces (e.g., the charged surface of the end effector body coupled to the robot arm) contribute to defects on the substrate. It is believed that by coating the surface of the end effector body (or another chamber component exhibiting a similar phenomenon) with an electrically dissipative material (e.g., coating 200), charge can be released from the surface of the end effector body (or another chamber component). This allows particles to escape van der Waals forces and redistribute. In other words, the electrically dissipative material provides a dissipative path from the coating to ground. The ability to dissipate charge is believed to improve particle and defect performance on the substrate. Furthermore, the coating 200 and / or pad 108 can provide an electrically dissipative path between the supported wafer and ground. If the wafer supported by the end effector 102 has any residual charge, this charge can be discharged via a path through the pad 108 and / or coating 200.

[0047] The coated end effector bodies (and other coated chamber components) can be manufactured with electrically dissipative material dopants to achieve the dissipative characteristics described above. However, due to various factors (e.g., limited supply, manufacturing and yield issues, long lead times, etc.), manufacturing doped components via body doping or slurry-based coatings can be expensive. Further, the doped components may result in brittle coatings with a wide range of surface / sheet resistivity distributions across the coated surface. The present disclosure achieves the above-mentioned dissipative characteristics by: via an atomic layer deposition (ALD) process, via a chemical vapor deposition (CVD) process, via a plasma enhanced atomic layer deposition (PEALD) process, via a metal organic chemical vapor deposition (MOCVD) process, or via a molecular beam epitaxy (MBE) process (with respect to Figure 4 and 5 ), a coating 200 is deposited on the top surface of a terminal effector body (or another chamber component) by coating the chamber component 200 with a coating layer 200. These processes can be advantageous and cost-effective because bare chamber components (e.g., bare terminal effector bodies) are more readily available, face fewer manufacturing and yield issues, have shorter lead times, etc. Furthermore, multiple chamber components (e.g., multiple terminal effector bodies) can be coated simultaneously (e.g., by inserting multiple terminal effector bodies into an ALD, CVD, PEALD, MOCVD, or MBE deposition chamber). The resulting coating can also be more uniform, more conformal, have lower porosity, be stronger, maintain its integrity longer, and have a narrower surface / sheet resistivity distribution across the coated surface than doped chamber components (e.g., terminal effectors) or chamber components (e.g., terminal effectors) coated by a slurry-based coating process.

[0048] The coating 200 may include an electrically dissipative material. In certain embodiments, the coating 200 may also include a corrosion resistant material, which may be a material that is resistant to plasma corrosion and / or erosion.

[0049] In some embodiments, the coating 200 can be a multi-layer coating, wherein at least one of the layers in the multi-layer coating is an electrically dissipative layer comprising one of the electrically dissipative materials described above, and wherein at least one other layer in the multi-layer coating is a plasma resistant layer comprising a plasma resistant material.

[0050] In some embodiments, the coating 200 is a multi-layer coating, and at least one layer of the multi-layer coating may include at least one of the following: aluminum oxide, yttrium oxide, zirconium oxide, Y3Al5O 12 , Y2O3-ZrO2 solid solution, including Y2O3-ZrO2 solid solution and Y4Al2O9 compound, HfO2, HfAlO x 、HfZrO x 、HfYO x , Hf-doped Y2O3, zinc oxide, tantalum oxide, titanium oxide, erbium oxide, gadolinium oxide, lanthanum oxide, praseodymium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, terbium oxide, dysprosium oxide, holmium oxide, thulium oxide, ytterbium oxide, or lutetium oxide.

[0051] In some embodiments, the coating 200 is a multi-layer coating, and at least one layer of the multi-layer coating may include the following: Y2O3 and Y2O3-based ceramics, Y3Al5O 12 (YAG), Al2O3 (aluminum oxide), Y4Al2O9 (YAM), YF3, SiC (silicon carbide), ErAlO3, GdAlO3, NdAlO3, YAlO3, Si3N4 (silicon nitride), AlN (aluminum nitride), TiO2 (titanium oxide), ZrO2 (zirconium oxide), TiC (titanium carbide), ZrC (zirconium carbide), TiN (titanium nitride), Y2O3 stabilized ZrO2 (YSZ), Er2O3 and Er2O3-based ceramics, Gd2O3 and Gd2O3-based ceramics, Er3Al5O 12 (EAG), Gd3Al5O 12 (GAG), Nd2O3 and Nd2O3-based ceramics, solid solutions including Y2O3-ZrO2 and ceramic compounds including Y4Al2O9, ceramic compounds including Y2O3, Er2O3, ZrO2, Gd2O3 and SiO2, Hf-based oxides and solid solutions, lanthanide-based oxides and solid solutions, or a combination of any of the above.

[0052] In some embodiments, the coating 200 is a multi-layer coating, and at least one layer of the multi-layer coating includes a solid solution formed from any of the above-mentioned ceramics. The coating 200 may also include a layer that may be a multi-phase material, including a solid solution of one or more of the above-mentioned materials and one or more additional phases.

[0053] Regarding the solid solution of Y2O3-ZrO2, the layer of coating 200 may include Y2O3 at a concentration of 10-90 mole ratio (mol percent) and ZrO2 at a concentration of 10-90 mole percent. In some examples, the solid solution of Y2O3-ZrO2 may include 10-20 mole percent Y2O3 and 80-90 mole percent ZrO2, may include 20-30 mole percent Y2O3 and 70-80 mole percent ZrO2, may include 30-40 mole percent Y2O3 and 60-70 mole percent ZrO2, may include 40-50 mole percent Y2O3 and 50-60 mole percent ZrO2, may include 60-70 mole percent Y2O3 and 30-40 mole percent ZrO2, may include 70-80 mole percent Y2O3 and 20-30 mole percent ZrO2, may include 80-90 mole percent Y2O3 and 10-20 mole percent ZrO2, and so on.

[0054] Regarding the layer of coating 200 comprising a solid solution of Y2O3-ZrO2 and Y4Al2O9, in one embodiment, the ceramic compound comprises 62.93 mol% Y2O3, 23.23 mol% ZrO2, and 13.94 mol% Al2O3. In another embodiment, the ceramic compound may comprise Y2O3 in a range of 50-75 mol%, ZrO2 in a range of 10-30 mol%, and Al2O3 in a range of 10-30 mol%. In another embodiment, coating 200 may comprise Y2O3 in a range of 40-100 mol%, ZrO2 in a range of 0.1-60 mol%, and Al2O3 in a range of 0.1-10 mol%. In another embodiment, the layer of coating 200 may comprise Y2O3 in a range of 40-60 mol%, ZrO2 in a range of 35-50 mol%, and Al2O3 in a range of 10-20 mol%. In another embodiment, a layer of coating 200 may include Y2O3 in a range of 40-50 mol percent, ZrO2 in a range of 20-40 mol percent, and Al2O3 in a range of 20-40 mol percent. In another embodiment, a layer of coating 200 may include Y2O3 in a range of 80-90 mol percent, ZrO2 in a range of 0.1-20 mol percent, and Al2O3 in a range of 10-20 mol percent. In another embodiment, a layer of coating 200 may include Y2O3 in a range of 60-80 mol percent, ZrO2 in a range of 0.1-10 mol percent, and Al2O3 in a range of 20-40 mol percent. In another embodiment, a layer of coating 200 may include Y2O3 in a range of 40-60 mol percent, ZrO2 in a range of 0.1-20 mol percent, and Al2O3 in a range of 30-40 mol percent. In other embodiments, other distributions may also be used for one or more layers of coating 200.

[0055] In one embodiment, the coating 200 is a multilayer coating, and at least one layer comprises or consists of a ceramic compound comprising a combination of Y2O3, ZrO2, Er2O3, Gd2O3, and SiO2. In one embodiment, the layers of the coating 200 may comprise Y2O3 in a range of 40-45 mol%, ZrO2 in a range of 0-10 mol%, Er2O3 in a range of 35-40 mol%, Gd2O3 in a range of 5-10 mol%, and SiO2 in a range of 5-15 mol%. In a first example, the layers of the coating 200 comprise 40 mol% Y2O3, 5 mol% ZrO2, 35 mol% Er2O3, 5 mol% Gd2O3, and 15 mol% SiO2. In a second example, the layer of coating 200 includes 45 mol% Y2O3, 5 mol% ZrO2, 35 mol% Er2O3, 10 mol% Gd2O3, and 5 mol% SiO2. In a third example, the layer of coating 200 includes 40 mol% Y2O3, 5 mol% ZrO2, 40 mol% Er2O3, 7 mol% Gd2O3, and 8 mol% SiO2.

[0056] Any of the above coating materials may include trace amounts of other materials, such as ZrO2, Al2O3, SiO2, B2O3, Er2O3, Nd2O3, Nb2O5, CeO2, Sm2O3, Yb2O3, or other oxides.

[0057] In some embodiments, as discussed above, the coating 200 may include an alternating stack of layers containing a first material and layers containing a second material. The layers containing the first material may include a single metal or metal alloy. Exemplary metals or metal alloys that may be used for the layers containing the first material may include metals or metal alloys whose oxides are generally used as bulk ceramics. In some embodiments, the layers containing the first material may include one or more of Al, Zr, Y-Zr, Mg-Al, Ca-Al, or Si. The layers containing the second material may be resistivity modifiers, such as, but not limited to, one or more of the following: transition metals, rare earths, main group metals, semiconductors, or alloys thereof. In some embodiments, the layers containing the second material may include one or more of the following: Ti, Fe, Co, Cu, Ni, Mn, V, Y, Nb, In, Sn, Fe-Co, or La-Ta.

[0058] In some embodiments, the layer comprising the first material and the layer comprising the second material may independently be an oxide, hydroxide, nitride, carbide, or metallic (i.e., having little or no oxygen, hydrogen, nitrogen, or carbon). In one embodiment, the layer comprising the first material and the layer comprising the second material may both be in the form of an oxide, hydroxide, nitride, carbide, or metal. In another embodiment, the layer comprising the first material may have a different form than the layer comprising the second material. For example, the layer comprising the first material may include aluminum hydroxide (e.g., AlO). 2.99 H 0.01 ), and the layer containing the second material can be metal Ti, TiN, SiC, metal Al, etc.

[0059] In some embodiments, the layer comprising the first material can have a first target thickness, and the layer comprising the second material can have a second target thickness. The ratio of the first target thickness to the second target thickness can range from about 50:1 to about 1:50, from about 30:1 to about 1:30, from about 20:1 to about 1:20, from about 10:1 to about 1:10, from about 10:1 to about 1:1, from about 8:1 to about 1:1, from about 5:1 to about 1:1, from about 10:1 to about 2:1, from about 8:1 to about 2:1, from about 5:1 to about 2:1, or from about 5:2 to about 1:1.

[0060] In one embodiment, the coating 200 may be aluminum oxide. In one embodiment, the coating 200 may be titanium oxide. In one embodiment, the coating 200 may be a combination of aluminum oxide and titanium oxide, such as an alternating stack of aluminum oxide and titanium oxide. In one embodiment, the electrically dissipative material is a stack of alternating layers of aluminum oxide and titanium oxide, and the ratio of the thickness of each aluminum oxide layer to the thickness of each titanium oxide layer in the stack ranges from about 10:1 to about 1:10. For example, the thickness ratio may be from about 8:1 to about 1:1, from about 5:1 to about 1:1, from about 10:1 to about 2:1, from about 8:1 to about 2:1, from about 5:1 to about 2:1, or from about 5:2 to about 1:1. In one embodiment, the electrically dissipative material may be a stack of aluminum oxide and metallic titanium, or a stack of aluminum hydroxide and metallic titanium, or the like.

[0061] For example, Figure 7A Energy dispersive X-ray spectroscopy (EDS) line scans depicting a coating comprising a stack of alternating layers of aluminum oxide and titanium oxide, and Figure 7B depiction Figure 7A Transmission electron microscopy (TEM) image of the coating depicted in Figure 5 at a 50 nm scale. Figure 7A , the atomic percentage of oxygen is depicted by graphical representation 730 , the atomic percentage of aluminum is depicted by graphical representation 720 , and the atomic percentage of titanium is depicted by graphical representation 710 . Figure 7AThe electrically dissipative coating is illustrated to include a well-separated alternating stack of aluminum oxide layers and titanium oxide layers, shown in part by the wavy graphical representations 710 and 720 in the range of 30 nm to 130 nm. Figure 7A and 7B The electrically dissipative coating depicted in FIG. 1 comprises well-separated layers, each of which is alumina (AlO x ) layers have a thickness of about 5 nm, and each titanium oxide (TiO y ) layers have a thickness of about 2 nm. The ratio of the thickness of each aluminum oxide layer to the thickness of each titanium oxide layer can be obtained by Figure 7A The atomic percentage of aluminum in the EDS line scan is compared with the atomic percentage of titanium. The total electrically dissipative coating has a thickness of approximately 100 nm. Figure 7A An electrically dissipative coating is deposited on the bulk alumina surface as shown in the EDS line scan in the range of 140 nm to 280 nm.

[0062] The coating 200 may be crystalline or amorphous and may uniformly and conformally cover the chamber component (e.g., the end effector body) and any features thereon (e.g., the contact pads 102) with a substantially uniform thickness. In one embodiment, the coating 200 conformally covers the coated underlying surface (including coated surface features) with a uniform thickness having a thickness variation of less than about + / - 20%, a thickness variation of less than about + / - 10%, a thickness variation of less than about + / - 5%, or a thickness variation of less than when the thickness of the coating at one location is compared to the thickness of the coating at another different location (or when the standard deviation resulting from multiple thicknesses evaluated at multiple locations is evaluated). An electrically dissipative coating according to one embodiment Figure 7B The TEM image in shows a uniform coating thickness across the entire depicted surface.

[0063] The coating 200 may also have a substantially uniform surface / sheet resistivity across the surface of the coating, or in other words, a narrow surface / sheet resistivity distribution. In some embodiments, the coating 200 has a uniform surface / sheet resistivity that varies by less than about + / - 35%, less than about + / - 30%, less than about + / - 25%, less than about + / - 20%, less than about + / - 10%, less than about + / - 5%, or less when comparing the surface / sheet resistivity of the coating at one location to the surface / sheet resistivity of the coating at a different location (or when evaluating the standard deviation resulting from multiple surface / sheet resistivities evaluated at multiple locations).

[0064] For example, Figure 9A and 9BImages are depicted of the front and back, respectively, of an exemplary end effector coated with a coating according to one embodiment. The sheet resistance values measured in each of the identified locations are summarized in Table 1 below.

[0065] Table 1: Sheet resistance distribution on the front and back surfaces of an exemplary end effector coated with a coating according to one embodiment

[0066]

[0067]

[0068] In contrast, Figure 10A and 10B Images of the front and back of an exemplary bulk-doped ceramic terminal effector are depicted, respectively. The sheet resistance values measured in each of the identified locations are summarized in Table 2 below.

[0069] Table 2: Sheet resistance distribution on the front and back surfaces of an exemplary bulk-doped ceramic terminal effector

[0070] Location Sheet resistance (Ohm square) 1 2.60E+11 2 4.00E+07 3 2.20E+10 4 7.00E+10 5 2.00E+11 6 5.00E+07 7 1.80E+07 8 8.70E+11 9 1.40E+07 10 3.30E+07 average value 3.25E+10 Standard Deviation 6E10％

[0071] The standard deviations in Tables 1 and 2 are indicators of sheet resistance uniformity at various locations on the end effector. The standard deviations in Table 2 illustrate the significant non-uniformity of sheet resistance across the surface of the bulk-doped ceramic end effector. In contrast, coating the end effector according to the embodiments described herein demonstrates improved sheet resistance uniformity across the end effector surface. This is demonstrated by the smaller standard deviations in Table 1 and the narrower surface / sheet resistivity distribution across the coated surface.

[0072] Because the deposition processes described herein (ALD, CVD, PEALD, MOCVD, MBE) are very conformal processes, the coating 200 can have a roughness that matches the roughness of the underlying surface being coated. In certain embodiments, the coating 200 can have a surface roughness of about + / - 20% or less, about + / - 10% or less, or about + / - 5% or less, compared to the surface roughness of the underlying surface being coated. The coatings described herein can be advantageous for parts with high aspect ratios (e.g., aspect ratios of about 3:1 to about 300:1, 20:1, 50:1, 100:1, 150:1, etc.), complex geometries, and three-dimensional structures because the coatings uniformly and conformally coat the entire surface of the part, including all complex features thereon.

[0073] For example, according to one embodiment, a surface micrograph (not shown) of a sample coated with a 50 nm thick aluminum oxide-titania nanolaminated structure having a ratio of each aluminum oxide layer thickness to each titanium oxide layer thickness of 5 nm:2 nm and a surface / sheet resistance of approximately 1.6×10 7 (According to ASTM D-257 method).

[0074] This is further supported by top-view scanning electron microscope (SEM) images (not shown) of an undoped bare alumina substrate and a nanolaminated structure coated alumina substrate. The roughness of the undoped bare alumina substrate was measured to be 51 ± 13 microinches. The roughness of the nanolaminated structure coated alumina substrate was measured to be 49 ± 6 microinches. The roughness measurements and two SEM images show that the coating according to the embodiments described herein retains the features and roughness of the underlying substrate at a thickness of 200 nm. This data demonstrates that the thin and conformal coatings described herein retain the mechanical properties of the underlying substrate and the feature shape at the submicron scale.

[0075] Compared to other deposition techniques (such as electron beam IAD or plasma spray), the coating 200 can be very dense and have very low porosity. For example, the coating 200 can have a porosity of less than about 1.5%, less than about 1%, less than about 0.5%, or about 0% (i.e., no pores). The term "no pores" as used herein means that there are no holes, pinholes, voids, or cracks along the entire depth of the coating 200 as measured by a transmission electron microscope (TEM). In contrast, in the case of conventional electron beam IAD or plasma spray techniques or doping or slurry-based coatings, the porosity may be 1-5%, and in some cases even higher. The electrically dissipative coating according to one embodiment Figure 7B The TEM images in Figure 4 illustrate the high density and low porosity nature of the coating.

[0076] The end effector body 102 (or other chamber components) can be coated with a coating 200 comprising a corrosion resistant material to withstand processing in a corrosive plasma. Non-limiting examples of corrosive process gases include halogen-containing gases (e.g., C2F6, SF6, SiCl4, HBr, NF3, CF4, CHF3, CH2F3, F, Cl2, CCl4, BCl3, and SiF4, among others) and other gases (e.g., O2 or N2O).

[0077] The etch rate (ER) of the coated component during operation and exposure to the plasma can be measured in angstroms per minute (Å / min). The plasma resistance of the coating 200 can be measured in units of nm / RFHr (nm / RFHr). Plasma resistance can also be measured by the erosion rate in units of nanometers / RFHr (nm / RFHr), where one RFHr represents one hour of treatment under plasma treatment conditions. Measurements can be made after different treatment times. For example, measurements can be made before treatment, after 50 treatment hours, after 150 treatment hours, after 200 treatment hours, and so on. For corrosion-resistant coatings, the erosion rate in a halogen plasma is generally less than about 100 nm / RFHr. Variations in the composition of the coating 200 deposited on the end effector body (or other chamber component) can result in a variety of different plasma resistance or erosion rate values. Furthermore, a corrosion-resistant coating 200 having one composition can have a variety of different plasma resistance or erosion rate values when exposed to various plasmas. For example, the coating 200 can have a first plasma resistance or erosion rate associated with a first type of plasma and a second plasma resistance or erosion rate associated with a second type of plasma.

[0078] The surface / sheet resistance of the coating 200 may range from about 1x10 4 Ohm / square to about 1x10 12 Ohm / square, from about 1x10 4 Ohm / square to about 1x10 11 Ohm / square, from about 1x10 5 Ohm / square to about 1x10 11 Ohm / square, from about 1x10 4 Ohm / square to about 1x10 10 Ohm / square, from about 1x10 4 Ohm / square to about 1x10 9 Ohm / square, from about 1x10 4 Ohm / square to about 1x10 8 Ohm / square, from about 1x10 4 Ohm / square to about 1x10 7 Ohm / square, from about 1x10 4 Ohm / square to about 1x10 6 Ohm / square, from about 1x10 4 Ohm / square to about 1x10 5 Ohm / square, from about 1x10 5 Ohm / square to about 1x10 10 Ohm / square, from about 1x10 5 Ohm / square to about 1x10 9 Ohm / square, from about 1x10 5 Ohm / square to about 1x10 8 Ohm / square, from about 1x10 5Ohm / square to about 1x10 7 Ohm / square, from about 1x10 5 Ohm / square to about 1x10 6 Ohm / square, from about 1x10 6 Ohm / square to about 1x10 11 Ohm / square, from about 1x10 6 Ohm / square to about 1x10 10 Ohm / square, from about 1x10 6 Ohm / square to about 1x10 9 Ohm / square, from about 1x10 6 Ohm / square to about 1x10 8 Ohm / square, from about 1x10 6 Ohm / square to about 1x10 7 Ohm / square, from about 1x10 7 Ohm / square to about 1x10 11 Ohm / square, from about 1x10 7 Ohm / square to about 1x10 10 Ohm / square, from about 1x10 7 Ohm / square to about 1x10 9 Ohm / square, from about 1x10 7 Ohm / square to about 1x10 8 Ohm / square, from about 1x10 10 Ohm / square to about 1x10 12 Ohm / square, from about 1x10 10 Ohm / square to about 1x10 11 The surface / sheet resistance in ohms / square, or any other range between these ranges, is measured according to method ASTM D-257 using a surface / sheet resistance measurement system (eg, Prostat PRS-801 with Probe PRF-912).

[0079] In certain embodiments, the surface / sheet resistance of the coating 200 can remain unchanged after being subjected to thermal cycling at temperatures ranging from about 150° C. to about 800° C., from about 200° C. to about 750° C., from about 300° C. to about 700° C., from about 400° C. to about 600° C., or about 500° C. In certain embodiments, the coating 200 can have a surface / sheet resistance after thermal cycling that is within about + / −35%, within about + / −30%, within about + / −25%, within about + / −20%, within about + / −10%, or within about + / −5% of the surface / sheet resistance of the coating 200 before thermal cycling.

[0080] In one embodiment where the coating 200 comprises a 100 nm thick nanolaminated structure coating of aluminum oxide and titanium oxide on silicon (wherein the ratio of the thickness of each aluminum oxide layer to the thickness of each titanium oxide layer is about 5:2 and the coating is deposited using ALD at 200° C.), the surface / sheet resistance of the as-deposited coating is about 9.53×10 6 Ohms / square. After subjecting the coating to thermal cycling, the coating had a resistance of approximately 3.90 x 10 6 Ohm / square. Thermal cycling was performed by subjecting the coating to 400°C in air five times, each for one hour. Specifically, the coating was subjected to the following thermal cycling profile: a) increasing the temperature from 30°C to approximately 400°C at a rate of 10°C / minute; b) maintaining the coating at 400°C for approximately one hour; c) reducing the temperature to 60°C; d) repeating the cycle a) through c) four more times; e) finally reducing the temperature to 30°C.

[0081] The coating 200 can be resistant to thermal shock. Resistance to thermal shock can be assessed by comparing the amount of cracks and the surface / sheet resistance of the as-deposited coating with the amount of cracks and the surface / sheet resistance of a coating that has been subjected to a thermal shock. The coating can be subjected to a thermal shock by exposing it to 200°C on a hot plate for about 10 minutes, then immersing the heated coating in ice water, and then air drying. The surface / sheet resistance of a coating that is resistant to thermal shock after the thermal shock can be within about + / - 35%, about + / - 30%, about + / - 25%, about + / - 20%, about + / - 10%, or about + / - 5% of the surface / sheet resistance of the coating before the thermal shock. A coating that is resistant to thermal shock can be one that is crack-free before the thermal shock and crack-free after having been subjected to the thermal shock.

[0082] For example, a nanolayered coating of 5 nm:3 nm AlO:TiO (i.e., a 5:3 ratio of the thickness of each aluminum oxide layer to the thickness of each titanium oxide layer) with a thickness of 100 nm was deposited on a quartz coupon without any intermediate buffer layer between the quartz coupon and the coating. The sheet resistance of this as-deposited exemplary coating was 5.7 (±1.2) x E6 ohms / square. After subjecting the coated coupon to a 200°C impact test, the sheet resistance of the coating was 7.3 (±1) x E6 ohms / square. This data demonstrates that the resistivity properties of the exemplary coating are independent of the resistivity properties of the underlying component (or substrate, which in this example is the quartz coupon). This data also demonstrates that the coating maintains a surface / sheet resistance after thermal shock that is within at least about + / - 35% of the surface / sheet resistance of the coating before the thermal shock.

[0083] In one embodiment where the coating 200 comprises a 50 nm thick nano-laminated coating of aluminum oxide and titanium oxide, wherein the ratio of the thickness of each aluminum oxide layer to the thickness of each titanium oxide layer is about 5:2, the sheet resistance of the as-deposited coating is about 1.6×10 7 After the coating was subjected to a heat treatment at 200°C, the electrical resistance of the coating was about 1.90 x 10 8 Ohm / square.

[0084] The coating 200 can be vacuum resistant. Vacuum resistance can be assessed by comparing the sheet resistance of the coating 200 outside of a vacuum to that in a vacuum. The sheet resistance of a vacuum resistant coating in a vacuum can be within about + / - 35%, within about + / - 30%, within about + / - 25%, within about + / - 20%, within about + / - 10%, or within about + / - 5% of the sheet resistance of the coating outside of a vacuum. In one embodiment where the coating 200 comprises a nano-laminated coating of aluminum oxide and titanium oxide, wherein the ratio of the thickness of each aluminum oxide layer to the thickness of each titanium oxide layer is about 5:2 and the coating is deposited at 200° C., as Figure 8 As seen in , the sheet resistance of the coating at 298K (or 500K) in vacuum is within about + / - 20% of the sheet resistance of the coating outside of vacuum at 298K (or 500K).

[0085] The coating 200 may have a range from about 500 kg / mm 2 To about 1000kg / mm 2 , from about 600kg / mm 2 To about 900kg / mm 2 , or from about 700kg / mm 2 To about 800kg / mm 2 The coating 200 may have an indentation modulus ranging from about 100 GPa to about 300 GPa, from about 120 GPa to about 250 GPa, or from about 150 GPa to about 200 GPa.

[0086] In one embodiment where the coating 200 comprises a nano-laminated coating of aluminum oxide and titanium oxide on silicon, wherein the ratio of the thickness of each aluminum oxide layer to the thickness of each titanium oxide layer is 5:2 and the coating is deposited at 200° C., the Vickers hardness value is approximately 791.88±50.55 kg / mm 2, and the indentation modulus is about 168.74±7.42 GPa. The hardness and indentation modulus can be measured using a nanohardness tester at a temperature of about 21-23° C. using a maximum force of about 0.5 mN, 1.0 mN, 2.0 mN, and 5.0 mN, a loading time of about 15 seconds, an unloading time of about 15 seconds, a pause time of about 10 seconds, a Poisson's ratio of about 0.2, and an indenter with an ID of Berkovich Diamond.

[0087] In comparison, the Vickers hardness value of 100 nm aluminum oxide deposited by ALD at 120°C is about 510 kg / mm 2 , while the Vickers hardness of 100nm titanium oxide deposited by ALD at 120℃ is about 127kg / mm 2 For α-alumina minerals, the Vickers hardness is about 1365 kg / mm 2 , and the elastic modulus is about 370GPa. For anatase titanium oxide mineral, the Vickers hardness is about 980kg / mm 2 , and the elastic modulus is about 230-290GPa.

[0088] Coating 200 may have a compositional purity of about 90% to about 100%, about 95% to about 99.9%, about 97% to about 99.8%, about 99% to about 99.7%, or about 99.5% as measured by X-ray photoelectron spectroscopy.

[0089] Suitable thicknesses for coating 200 may range from about 1 nm to 1000 nm. In embodiments, the coating may have a maximum thickness of about 750 nm, a maximum thickness of about 500 nm, a maximum thickness of about 400 nm, a maximum thickness of about 300 nm, a maximum thickness of about 250 nm, a maximum thickness of about 200 nm, a maximum thickness of about 150 nm, a maximum thickness of about 100 nm, a maximum thickness of 50 nm, a maximum thickness of 30 nm, a maximum thickness of 20 nm, or another maximum thickness. In embodiments, coating 200 may have a minimum thickness of 5 nm, a minimum thickness of 10 nm, a minimum thickness of 20 nm, a minimum thickness of 25 nm, a minimum thickness of 35 nm, a minimum thickness of 50 nm, a minimum thickness of 100 nm, a minimum thickness of 150 nm, or another minimum thickness.

[0090] Back to Figure 1, the end effector 100 may include three contact pads 108. However, other embodiments may include other numbers of contact pads 108. The contact pads 108 may be included on the end effector body to minimize substrate slippage on the end effector body during transport. To reduce substrate slippage, some end effectors include integrally machined contact pads. The integrally machined contact pads may have a domed contact surface with surface characteristics that contact and support the substrate and also provide a low slip tendency. Each integrally machined contact pad may have a machined contact surface with a specific domed profile and surface roughness, which may reduce the likelihood of substrate slippage thereon. In some cases, wear and contamination of the integrally machined end effector contact pads with silicon particles / dust may increase the tendency of the substrate to slip on the contact pads and, therefore, may limit the useful life of the end effector. To prevent substrate slippage, the entire end effector may be periodically replaced. In some embodiments, a coating 200 covers the contact pads 180. In some embodiments, the contact pads 180 are composed of an electrically dissipative material.

[0091] In certain embodiments of the present disclosure, replaceable contact pads are provided that can be quickly exchanged and replaced when worn. Thus, the overall cost of continuing to provide low-slip end effectors can be drastically reduced. An exemplary replaceable contact pad that can be provided in the end effector body 102 is shown in FIG. Figure 3 middle.

[0092] like Figure 3 As depicted in FIG, the bottom surface 102B of the end effector body 102 may include a recess 214 formed therein. The recess 214 may be circular and may extend from the bottom surface 102B into the end effector body 102 to a depth HR. A hole 215 may be formed in the end effector body 102 and may extend between the top surface 102T and the recess 214. For example, the recess 214 may have a recess diameter DR from about 5 mm to about 10 mm and a recess height HR from about 1.1 mm to about 2.0 mm. For example, the hole 215 may have an aperture diameter DA from about 2.8 mm to about 4.8 mm and an aperture height HA from about 0.85 mm to about 1.1 mm. Other diameters, heights, and depths may be used. Each may be larger for use with a substrate having a diameter of 450 mm.

[0093] The contact pad 108 may include a contact pad head 208H having a contact surface 210 that can be configured to contact the substrate 101. The contact surface 210 may include a dome-shaped shape. The contact surface 210 may have a surface roughness of about 45 μin Ra to about 65 μin Ra measured using a profilometer (e.g., a Surfcorder SE-2300 device that complies with JIS standards). For example, the contact pad head 208H may have a contact pad height HP of about 1.0 mm to about 2.0 mm. For example, the contact pad head 208H may have a contact pad diameter DP of 6.0 mm to 12.0 mm. Other suitable contact surface sizes, profiles, radii, and surface roughnesses may be used.

[0094] The contact pad 108 may further include a shaft 212 coupled to the contact pad head 208H, and the shaft 212 may be received in the hole 215. The contact pad head 208H and the shaft 212 may be integrally formed as a one-piece component. The shaft 212 may extend a distance further from the underside 213 of the contact pad head 208H and enter the recess 214. The shaft 212 may include a shaft indentation 216 formed therein. The shaft 212 should not extend below the bottom surface 102B of the end effector body 102 so as not to interfere with the substrate placement. The shaft indentation 216 may be provided in the form of a groove and may be formed in the shaft 212 at a position between the underside 213 of the contact pad head 208H and the shaft end 212E of the shaft 212.

[0095] The shaft indentation 216 may include a surface profile having an arcuate bottom. A circular securing member 218 may be received around the shaft 212 and may be seated in the shaft indentation 216 to secure the contact pad 108 to the end effector body 102. When the circular securing member 218 is seated in the shaft indentation 216, the circular securing member 218 contacts the seating surface 214S of the recess 214 and also contacts at least a portion of the shaft indentation 216. In the depicted embodiment, the circular securing member 218 includes an O-ring that is compressed against the seating surface 214S in the installed condition. The O-ring may be manufactured from an elastomeric material, such as those available from DUPONT PERFORMANCE ELASTOMERS and DUPONT PERFORMANCE ELASTOMERS. Perfluoroelastomer, copolymer of hexafluoropropylene (HFP) and vinylidene fluoride (VDF or VF2) (available from Chemours as (obtained), or any other suitable high temperature elastomer. The elastomeric O-ring can be used at temperatures up to about 316°C.

[0096] Alternative contact pad 108 configurations other than those shown may be used. For example, alternative contact pads configured for high temperature applications (e.g., from about 250° C. to about 650° C., or greater than about 320° C.) may be used. In alternative embodiments, the shaft indentations 216 may be different (e.g., a different shape and / or size and / or location), the securing members 218 may be different (e.g., a different shape and / or size and / or location and / or material of construction), any of the dimensions of any portion of the contact pad may be different, the material of construction of the contact pad may be different, etc.

[0097] In some embodiments, the contact pad 108 can be made of or include any of the materials of construction listed above for the end effector body. For example, in some embodiments, the contact pad 108 can include glass, quartz, ceramic, or a conductive material (e.g., a metallic material). Exemplary ceramics can include bulk alumina, an alumina-SiC composite, SiC, silicon nitride, boron nitride, and boron. Exemplary conductive materials can include stainless steel, aluminum, nickel, copper, chromium, cobalt, molybdenum, ruthenium, tungsten, platinum, or other suitable metals or alloys (e.g., aluminum alloy Al6061).

[0098] The above can be directed to Figure 2 The described coating is deposited on the top surface of an end effector body (eg, end effector body 102 ) and on the contact surfaces of contact pad heads (eg, 208H) of contact pads in the end effector body.

[0099] Figure 4 One embodiment of a deposition process for depositing a coating on an article, such as a chamber component (e.g., an end effector body with or without contact pads), according to ALD techniques is described. Prior to commencing a selected deposition process (e.g., ALD, CVD, PEALD, MOCVD, MBE, etc.), one or more chamber components (e.g., one or more end effectors) to be coated with any of the coatings described herein can be positioned in a controlled temperature-pressure deposition chamber.

[0100] There are various types of ALD processes, and a particular type may be selected based on several factors, such as the surface to be coated, the coating material, the chemical interaction between the surface and the coating material, etc. The general principle of various ALD processes involves growing a thin film layer by repeatedly exposing the surface to be coated to pulses of a gaseous chemical precursor that chemically reacts with the surface, one pulse at a time, in a self-limited manner.

[0101] Figure 4 An article 110 having a surface is shown. The article 110 may represent a chamber component (e.g., Figure 1). For ALD, either the adsorption of a precursor onto a surface or the reaction of a reactant with an adsorbed precursor can be referred to as a "half-reaction." During a first half-reaction, a precursor containing a first material (e.g., a metal-containing precursor) 160 is injected / pulsed onto the surface of the article 110 for a time sufficient to allow the precursor to fully adsorb onto the surface. Adsorption is self-limiting in that the precursor will adsorb onto a finite number of available sites on the surface, thereby forming a uniform, conformal, and continuous adsorption layer 114 on the surface. Any site that has adsorbed a precursor will become unavailable for further adsorption of the same precursor unless and / or until the adsorbed site is subjected to a treatment that will create new available sites on the uniform, conformal, and continuous coating. Exemplary treatments can be plasma treatment, treatment by exposing the adsorbed layer to free radicals, or introduction of a different precursor to the surface that is capable of reacting with the most recently adsorbed layer.

[0102] In some embodiments, two or more precursors are injected / pulsed together simultaneously or sequentially, and the two or more precursors adsorb onto the surface of the article. Excess precursors are pumped / purged with an inert gas. Thereafter, a first reactant 165 (e.g., an oxygen-containing oxidizing / hydroxylating reactant, a nitrogen-containing reactant, a carbon-containing reactant, etc.) is injected / pulsed to react with the adsorbed layer 114 to form a layer 116 comprising a first material (e.g., a first metal oxide layer or a multi-metal oxide layer). The layer 116 comprising the first material can be uniform, continuous, conformal, and have low porosity. In some embodiments, after a single ALD deposition cycle, the layer 116 can have a thickness of less than one atomic layer to a few atoms.

[0103] Multiple full ALD deposition cycles may be performed to deposit a thicker layer 116, wherein each full cycle (e.g., including introducing a precursor 160, rinsing / purging, introducing a reactant 165, and then rinsing / purging again) increases the thickness by an additional portion of one to several atoms. As shown, up to n full cycles may be performed to grow layer 116 until a first target thickness is achieved, where n is an integer greater than 1. In embodiments, layer 116 may have a first target thickness of about 5 angstroms to about 100 angstroms, about 10 angstroms to about 80 angstroms, or about 20 angstroms to about 50 angstroms. In some embodiments, the first target thickness can range from about 1 nm to about 1000 nm, from about 20 nm to about 500 nm, from about 20 nm to about 400 nm, from about 20 nm to about 300 nm, from about 20 nm to about 200 nm, from about 20 nm to about 100 nm, from about 50 nm to about 100 nm, or from about 20 nm to about 50 nm.

[0104] Subsequently, the article 110 having the layer 116 comprising the first material can be introduced to an additional precursor, such as a precursor 170 comprising a second material (e.g., a precursor comprising a second metal), for a second duration to form a third half-reaction and / or until a second adsorbed layer 118 is formed. Subsequently, the article 110 can be introduced to a second reactant 175 to react with the adsorbed layer 118 to form a fourth half-reaction and / or grow a layer 120 comprising the second material. Layer 120 can be uniform, continuous, conformal, and have low porosity. After a single full cycle (e.g., including introducing precursor 170, rinsing / purging, introducing reactant 175, and then rinsing / purging again), layer 120 can have a thickness of less than one atom to several atoms (e.g., 2-3 atoms). Multiple cycles can be performed to deposit a thicker layer 120, with each cycle adding an additional portion of one atom to several atoms to the thickness. As shown, the full cycle can be repeated m times to achieve a second target thickness for layer 120, where m is an integer greater than 1. In embodiments, layer 120 may have a second target thickness of about 1 angstrom to about 50 angstroms, about 5 angstroms to about 30 angstroms, or about 10 angstroms to about 20 angstroms. In some embodiments, the second target thickness may range from about 1 nm to about 1000 nm, from about 20 nm to about 500 nm, from about 20 nm to about 400 nm, from about 20 nm to about 300 nm, from about 20 nm to about 200 nm, from about 20 nm to about 100 nm, from about 50 nm to about 100 nm, or from about 20 nm to about 50 nm.

[0105] The full ALD deposition cycle z may be repeated until the total target thickness of the coating is achieved. The number of cycles z may be represented by a fraction or integer having a value greater than 1 (e.g., 2-50, 5-30, 7-17, and any other number or range of numbers within these ranges). The total target thickness may range from about 1 nm to about 1000 nm, from about 20 nm to about 500 nm, from about 20 nm to about 400 nm, from about 20 nm to about 300 nm, from about 20 nm to about 200 nm, from about 20 nm to about 100 nm, from about 50 nm to about 100 nm, or from about 20 nm to about 50 nm. The final coating may include a stack of alternating layers of layers 116 comprising the first material and layers 120 comprising the second material.

[0106] The process described above for forming a stack of alternating layers may also be referred to herein as sequential deposition. Other ALD sequences (e.g., co-deposition or co-dosing) may also be used herein (e.g., co-injecting multiple metal-containing precursors or sequentially injecting multiple metal-containing precursors prior to introducing the reactants into the ALD deposition chamber).

[0107] After the stack of alternating layers has been formed, in some embodiments, an annealing process may be performed to diffuse the alternating layers of different materials into each other and form a composite coating (e.g., a composite oxide, composite hydroxide, composite nitride, composite carbide, etc.) having a single crystalline / amorphous phase or multiple crystalline / amorphous phases. After the annealing process, the stack of alternating layers may become a single interdiffused coating layer (not shown). Figure 4 For example, if the layers in the stack are Y2O3, Al2O3, and ZrO2, the resulting single interdiffusion coating layer can be a ceramic compound comprising a solid solution of Y2O3-ZrO2 and Y4Al2O9.

[0108] The ratio of n cycles (used to deposit layer 116 comprising the first material) to m cycles (used to deposit layer 120 comprising the second material) can be expressed as n:m. n:m can correspond to the ratio of the first target thickness of each layer 116 to the second target thickness of each layer 120. n:m can also correspond to the composition ratio of the first material to the second material in coating 200.

[0109] In one embodiment, the Figure 4 The ALD process described in

[0026] deposits a coating 200 on the top surface 102T of the end effector body (or the top surface of other chamber components). The coating 200 may include an electrically dissipative material that is a stack of alternating nanolayers 116 and 120 (also referred to herein as a nanostack structure). The ratio of the thickness of each nanolayer 116 to the thickness of each nanolayer 120 in the stack may range from about 50:1 to about 1:50, from about 30:1 to about 1:30, from about 20:1 to about 1:20, from about 10:1 to about 1:10, from about 10:1 to about 1:1, from about 8:1 to about 1:1, from about 5:1 to about 1:1, from about 10:1 to about 2:1, from about 8:1 to about 2:1, from about 5:1 to about 2:1, or from about 5:2 to about 1:1.

[0110] The first target thickness of the layer comprising the first material and the second target thickness of the layer comprising the second material can be independently varied between deposition cycles. For example, the thickness of one layer comprising the first material can be 5 nm, while the thickness of another layer comprising the first material can be 7 nm. Similarly, the thickness of one layer comprising the second material can be 2 nm, while the thickness of another layer comprising the second material can be 3 nm.

[0111] The deposition process temperature may correspond to the reactant composition in the coating 200. In other words, the deposition process temperature may determine the amount of oxygen, hydrogen, nitrogen, carbon, and the like in the coating 200. Depending on the type of process, the ALD process may be performed at various temperatures. The optimal temperature range for a particular ALD process is referred to as the "ALD temperature window." Temperatures below the ALD temperature window may result in poor growth rates and non-ALD type deposition. Temperatures above the ALD temperature window may result in reactions occurring via a chemical vapor deposition (CVD) mechanism. The ALD temperature window may range from about 80°C to about 500°C, from about 100°C to about 400°C. In some embodiments, the ALD temperature window is between about 100-300°C, or about 200°C.

[0112] The electrostatic dissipation of a chamber component (e.g., an end effector body) coated with coating 200 can be a function of the surface resistivity (or sheet resistance) of coating 200. The surface / sheet resistivity of coating 200 can be a function of the composition of the coating (e.g., n:m ratio and reactant composition / content) and the thickness of the coating (which is determined by the number of full ALD cycles (z value)). For example, a 50 nm thick aluminum oxide-titanium oxide nanolaminated structure with a ratio of aluminum oxide layer thickness to titanium oxide layer thickness of 5 nm:2 nm has a resistivity of approximately 1.6 x 10 7 The sheet resistance of ohms / square is about 9.4x10 6 The surface / sheet resistance in ohms / square is about 7.5x10 7 Sheet resistance in ohms / square, where all sheet resistances are measured according to ASTM D-257.

[0113] As can be appreciated from the ALD process described above, the coating 200 can be formed using an atomically precise, layer-by-layer approach to produce a nano-laminated structure having a composition and thickness that can be controlled in the sub-nanometer range.

[0114] In one embodiment, layer 116 may be aluminum oxide, and layer 120 may be titanium oxide. Exemplary aluminum-containing precursors that may be used to deposit the aluminum oxide layer include, but are not limited to, trimethylaluminum (TMA), diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, triethylaluminum (TEA), triisobutylaluminum, trimethylaluminum, or tris(diethylamido)aluminum.

[0115] Exemplary titanium-containing precursors that can be used to deposit the titanium oxide layer include, but are not limited to, tetrakis(dimethylamido)titanium, tetrakis(ethylmethylamido)titanium, titanium tetrachloride, titanium ethoxide, titanium isopropoxide, methylcyclopentadienyl titanium isopropoxide, titanium dimethylaminoethoxide isopropoxide variant, tris(dimethylamido)ethylcyclopentadienyl titanium, cycloheptatrienyl cyclopentadienyl titanium, and tris(methoxy)cyclopentadienyl titanium.

[0116] Depending on the composition of coating 200, other metal-containing precursors may be used.

[0117] Yttrium-based coatings can be deposited by ALD using yttrium-containing precursors such as, but not limited to, tris(N,N-bis(trimethylsilyl)amide)yttrium(III), yttrium(III)butoxide, tris(cyclopentadienyl)yttrium(III), and Y(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato).

[0118] Zirconium-based coatings can be deposited by ALD using zirconium-containing precursors such as, but not limited to, zirconium (IV) bromide, zirconium (IV) chloride, zirconium (IV) tert-butoxide, tetrakis (diethylamido) zirconium (IV), tetrakis (dimethylamido) zirconium (IV), or tetrakis (ethylmethylamido) zirconium (IV).

[0119] Hafnium-based coatings can be deposited by ALD using hafnium-containing precursors such as, but not limited to, HfCl 4 , TEMAHf, TDMAHf, HfCp variants, ZrCp variants.

[0120] Erbium-based coatings can be deposited by ALD using erbium-containing precursors such as, but not limited to, erbium(III)trimethylcyclopentadienyl (Er(MeCp)3), erbium boraneamide (Er(BA)3), Er(TMHD)3, erbium(III)tris(2,2,6,6-tetramethyl-3,5-heptanedionate), and tris(butylcyclopentadienyl)erbium(III).

[0121] Exemplary oxidizing reactants that may be used in the ALD process may include, but are not limited to, oxygen, oxygen radicals, water, ozone, alcohol reactants, etc. Other exemplary reactants that may be used in the ALD process to form a stack of electrically dissipative layers may include, but are not limited to, reducing agents (H2, H2 plasma, metal organic reagents such as aluminum hydride derivatives, silanes), nitriding agents (ammonia, amines, N2), carburizing agents (alkanes), etc.

[0122] In some embodiments, the coating 200 can be deposited on the surface of a chamber component (e.g., an end effector body with or without contact pads) via a CVD process. An exemplary CVD system is shown in FIG. Figure 5 The system includes a chemical vapor precursor supply system 505 and a CVD reactor 510. The vapor precursor supply system 505 functions to generate a vapor precursor 520 from a starting material 515 (which may be in solid, liquid, or gaseous form). The vapor can then be transported into the CVD reactor 510 and deposited as a coating 525 and / or 545 on a surface (e.g., the top surface 102T of the end effector body). An article 530 can be positioned on an article holder 535.

[0123] Figure 5 The coating depicted in FIG includes a bilayer of layer 525 and layer 545. One of ordinary skill in the art will appreciate that while only one bilayer is illustrated with respect to a CVD process, multilayer coatings (e.g., a stack of more than two alternating layers) are also contemplated herein with respect to a CVD process. Multilayer coatings comprising a stack of alternating layers of aluminum oxide and titanium oxide deposited by CVD are contemplated herein in certain embodiments.

[0124] The CVD reactor 510 uses a heater 540 to heat the article 530 to a deposition temperature. In some embodiments, the heater can heat the walls of the CVD reactor (also referred to as a "hot wall reactor"), and the walls of the reactor can transfer heat to the article. In other embodiments, the article can be heated separately while the walls of the CVD reactor are maintained cold (also referred to as a "cold wall reactor"). It is to be understood that the CVD system configuration should not be interpreted as limiting. Various equipment can be used in the CVD system, and the equipment is selected to obtain optimal processing conditions that can give a coating with uniform thickness, surface morphology, structure, and composition.

[0125] Various CVD techniques include the following stages: (1) generating reactive gaseous reactant species (also called "precursors") from starting materials; (2) transporting the precursors into a reaction chamber (also called a "reactor"); (3) adsorbing the precursors onto a heated article; (4) engaging in a chemical reaction between the precursor and the article at a gas-solid interface to form deposits and gaseous byproducts; and (5) removing the gaseous byproducts and unreacted gaseous precursors from the reaction chamber.

[0126] Suitable CVD precursors can be stable at room temperature, have a low evaporation temperature, produce a vapor that is stable at low temperatures, have a suitable deposition rate (low for thin film coatings and high for thick film coatings), have relatively low toxicity, are cost-effective, and are relatively pure. For some CVD reactions (such as thermal decomposition (also known as "pyrolysis") or disproportionation reactions), the chemical precursor alone may be sufficient to complete the deposition.

[0127] CVD has many advantages, including its ability to deposit highly dense and pure coatings, and its ability to produce uniform films with good reproducibility and adhesion at relatively high deposition rates. In embodiments, layers deposited using CVD can have a porosity of less than 1%, a porosity of less than 0.1%, or be non-porous (e.g., 0% porosity). Thus, it can be used to uniformly coat complex-shaped parts and deposit conformal films with good conformal coverage (e.g., having a substantially uniform thickness). CVD can also be used to deposit films made of multiple components by feeding multiple chemical precursors into a mixing chamber at predetermined ratios and then supplying the mixture to a CVD reactor system.

[0128] The CVD processes contemplated herein may utilize some of the precursors listed above with respect to the ALD processes contemplated herein.

[0129] In certain embodiments, it may be preferred to deposit the coating 200 using an ALD process rather than a CVD process.

[0130] Figure 6An example embodiment of an electronic device processing tool 600 is shown, comprising a transfer robot 650 having an end effector 100 supporting a substrate 101 (shown in phantom for illustrative purposes), wherein the substrate 101 is supported on contact pads (which may be integral or replaceable). The end effector 100 (with or without contact pads disposed thereon) may be coated with an electrically dissipative material as described herein using an ALD, CVD, PEALD, or MBE process. The electronic device processing tool 600 may include a plurality of processing chambers 655 (shown in phantom) coupled to a transfer chamber 648. The transfer chamber 648 may house a transfer chamber (TC) robot 650. The TC robot 650 may have a first arm 651, a second arm 652, and a third arm 653 (e.g., a robot wrist). The end effector 100 is coupled to the third arm 653, for example, via a mounting plate 654. The end effector 100 may contact a substrate 101 (eg, a semiconductor wafer, a glass plate, etc.) and support the substrate thereon.

[0131] The transfer chamber 648 of the processing tool 600 can be connected to a factory interface 662 via one or more load lock chambers 656. The factory interface 662 can house a factory interface (FI) robot 661. The FI robot 661 can include an end effector (not shown, but substantially the same as the end effector 100) that can have replaceable contact pads 108 as described herein and can be coated with an electrically dissipative material as described herein using an ALD or CVD process.

[0132] The substrate carrier 664 may be detachably connected to the front wall of the factory interface 662 , and the substrates 101 therein may be moved between the substrate carrier 664 and the one or more load lock chambers 656 by the FI robot 661 .

[0133] The processing tool 100 can be coupled to a controller 665. The controller 665 can control the movement and processing of the substrate 101. For example, the controller 665 can include a central processing unit (CPU), support circuits, and memory. For example, in operation, the TC robot 650 can be operated to move the substrate 101 between various process chambers 655 and load lock chambers 656 or between different process chambers 655, subject to commands from the controller 665.

[0134] When the manufacturing process is performed, the FI robot 661 and the TC robot 650 working in conjunction can move the substrate 101 between the substrate carrier 664 and the processing chamber 655. Various electronic device manufacturing processes (e.g., semiconductor device manufacturing processes) (e.g., oxidation, thin film deposition, etching, thermal treatment, degassing, cooling, etc.) can be performed in the processing chamber 655.

[0135] While the TC chamber robot 650 is described as having end effectors coated with an electrically dissipative coating, the FI robot 661 may additionally or alternatively include end effectors having an electrically dissipative coating.

[0136] In a first embodiment, a coated chamber component is described, comprising:

[0137] A chamber component; and a coating deposited on a surface of the chamber component, the coating comprising an electrically dissipative material, wherein the electrically dissipative material provides a dissipative path from the coating to ground, wherein the coating is uniform, conformal, and non-porous, wherein the coating has a thickness ranging from about 10 nm to about 900 nm, and wherein the coating has a thickness ranging from about 1 x 10 5 Ohm / square to about 1x10 11 Surface / sheet resistance in ohms / square.

[0138] In a second embodiment, the coated chamber component of the first embodiment is described, wherein the surface / sheet resistance of the coating remains unchanged after thermal cycling at temperatures ranging from about 300°C to about 700°C.

[0139] In a third embodiment, the coated chamber component of the first embodiment is described, wherein the coating has a thickness ranging from about 20 nm to about 900 nm.

[0140] In a fourth embodiment, the coated chamber component of the first embodiment is described, wherein the chamber component comprises a conductive material, a ceramic, a polymer, or quartz.

[0141] In a fifth embodiment, the coated chamber component of the first embodiment is described, wherein the coating has a range from about 500 kg / mm 2 To about 1000kg / mm 2 Vickers hardness.

[0142] In a sixth embodiment, the coated chamber component of the first embodiment is described, wherein the surface / sheet resistance of the coating is uniform as shown by a surface / sheet resistance variation of less than about ±35% across the coating.

[0143] In a seventh embodiment, the coated chamber component of the first embodiment is described, wherein the electrically dissipative material comprises an alternating stack of layers comprising the first material and layers comprising the second material.

[0144] In an eighth embodiment, the coated chamber component of the seventh embodiment is described, wherein the layer comprising the first material comprises a metal or a metal alloy comprising one or more of Al, Zr, Y-Zr, Mg-Al, Ca-Al, Si.

[0145] In a ninth embodiment, the coated chamber component of the seventh embodiment is described, wherein the second material-containing layer comprises a transition metal, a rare earth, a main group metal, a semiconductor, or an alloy thereof.

[0146] In a tenth embodiment, the coated chamber component of the ninth embodiment is described, wherein the layer comprising the second material comprises one or more of Ti, Fe, Co, Cu, Ni, Mn, V, Y, Nb, In, Sn, Fe—Co, La—Ta.

[0147] In an eleventh embodiment, the coated chamber component of the seventh embodiment is described, wherein a ratio of a thickness of each first material-containing layer to a thickness of each second material-containing layer in the alternating stack ranges from about 50:1 to about 1:50.

[0148] In a twelfth embodiment, the coated chamber component of the first embodiment is described, wherein the coating is resistant to corrosive plasma.

[0149] In a thirteenth embodiment, a method is described, the method comprising: depositing a coating onto a surface of a chamber component using an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, a plasma enhanced atomic layer deposition (PEALD) process, a metal organic chemical vapor deposition (MOCVD), or a molecular beam epitaxy (MBE) process, the coating comprising an electrically dissipative material, wherein the electrically dissipative material provides a dissipation path from the coating to ground, wherein the coating is uniform, conformal, and non-porous, wherein the coating has a thickness ranging from about 10 nm to about 900 nm, and wherein the coating has a thickness ranging from about 1 x 10 5 Ohm / square to about 1x10 11 Surface / sheet resistance in ohms / square.

[0150] In a fourteenth embodiment, the method of the thirteenth embodiment is described, wherein the step of depositing the coating using the ALD process includes performing a deposition cycle, the deposition cycle including: injecting a precursor containing a first material into a deposition chamber containing the chamber component so that the precursor containing the first material is adsorbed onto the surface of the chamber component to form a first half-reaction; injecting a first reactant into the deposition chamber to form a second half-reaction; repeating the steps of injecting the precursor containing the first material and injecting the first reactant one or more times until a first target thickness of the layer containing the first material of the coating is achieved; injecting a precursor containing a second material into the deposition chamber so that the precursor containing the second material is adsorbed onto the layer containing the first material to form a third half-reaction; injecting a second reactant into the deposition chamber to form a fourth half-reaction; and repeating the steps of injecting the precursor containing the second material and injecting the second reactant one or more times until a second target thickness of the layer containing the second material of the coating is achieved; and repeating the deposition cycle one or more times until the thickness ranging from about 20 nm to about 500 nm is achieved.

[0151] In a fifteenth embodiment, the method of the thirteenth embodiment is described, wherein the ratio of the first target thickness to the second target thickness ranges from about 50:1 to about 1:50.

[0152] In a sixteenth embodiment, the method of the thirteenth embodiment is described, wherein the first target thickness and the second target thickness can be independently varied between deposition cycles.

[0153] In a seventeenth embodiment, the method of the thirteenth embodiment is described, wherein the coating has a range from about 1x10 5 Ohm / square to about 1x10 11 ohms / square, and wherein the surface / sheet resistance of the coating is uniform as demonstrated by a surface / sheet resistance variation of less than about ±35% across the coating.

[0154] In an eighteenth embodiment, the method of the thirteenth embodiment is described, wherein the layer comprising the first material comprises a metal or a metal alloy, the metal or the metal alloy comprising one or more of Al, Zr, Y-Zr, Mg-Al, Ca-Al, Si, and wherein the layer comprising the second material comprises one or more of Ti, Fe, Co, Cu, Ni, Mn, V, Y, Nb, In, Sn, Fe-Co, La-Ta.

[0155] In a nineteenth embodiment, an electrically dissipative coating is described that includes an electrically dissipative material, wherein the coating is uniform, conformal, and non-porous, wherein the coating has a thickness ranging from about 20 nm to about 500 nm, and wherein the coating has a surface area ranging from about 1 x 10 5 Ohm / square to about 1x10 11 Surface / sheet resistance in ohms / square.

[0156] In a twentieth embodiment, the electrically dissipative coating of the nineteenth embodiment is described, wherein the electrically dissipative material comprises an alternating stack of layers comprising a first material and layers comprising a second material, wherein the layers comprising the first material comprise a metal or a metal alloy, the metal or the metal alloy comprising one or more of Al, Zr, Y-Zr, Mg-Al, Ca-Al, Si, wherein the layers comprising the second material comprise one or more of Ti, Fe, Co, Cu, Ni, Mn, V, Y, Nb, In, Sn, Fe-Co, La-Ta, wherein the coating has a mass fraction ranging from about 500 kg / mm 2 To about 1000kg / mm 2 The coating has a Vickers hardness of about 100°C and a surface / sheet resistance of about 100°C, wherein the surface / sheet resistance of the coating is uniform as shown by a surface / sheet resistance variation of less than about ±35% across the coating.

[0157] In a twenty-first embodiment, an end effector for a robotic arm is described, the end effector comprising: an end effector body; and a coating deposited on a surface of the end effector body, the coating comprising an electrically dissipative material, wherein the electrically dissipative material provides a dissipative path from the coating to ground, wherein the coating is uniform, conformal, and non-porous, wherein the coating has a thickness ranging from about 20 nm to about 500 nm, and wherein the coating has a surface area ranging from about 1 x 10 5 Ohm / square to about 1x10 11 Ohm / square resistance.

[0158] In a twenty-second embodiment, the end effector of the twenty-first embodiment is described, wherein the electrical resistance of the coating remains unchanged after thermal cycling at temperatures ranging from about 300°C to about 700°C.

[0159] In a twenty-third embodiment, the end effector of the twenty-first embodiment is described, wherein the coating has a thickness ranging from about 20 nm to about 200 nm.

[0160] In a twenty-fourth embodiment, the end effector of the twenty-first embodiment is described, wherein the end effector body includes a conductive material, ceramic, or quartz.

[0161] In a twenty-fifth embodiment, the end effector of the twenty-fourth embodiment is described, wherein the end effector body includes a conductive material that is metal.

[0162] In a twenty-sixth embodiment, the end effector of the twenty-first embodiment is described, wherein the end effector body includes a ceramic that is bulk alumina.

[0163] In a twenty-seventh embodiment, the end effector of the twenty-sixth embodiment is described, wherein the electrically dissipative material includes aluminum oxide, titanium oxide, or a combination thereof.

[0164] In a twenty-eighth embodiment, the end effector of the twenty-seventh embodiment is described, wherein the electrically dissipative material comprises alternating stacks of aluminum oxide and titanium oxide.

[0165] In a twenty-ninth embodiment, the method of the twenty-eighth embodiment is described, wherein a ratio of the thickness of each aluminum oxide layer to the thickness of each titanium oxide layer in the alternating stack of aluminum oxide and titanium oxide ranges from about 10:1 to about 1:1.

[0166] In a thirtieth embodiment, the end effector of the twenty-fourth embodiment is described, wherein the end effector body includes quartz and the coating is transparent.

[0167] In a thirty-first embodiment, the end effector of the twenty-first embodiment is described, wherein the coating is resistant to corrosive plasma.

[0168] In a thirty-second embodiment, the terminal actuator of the twenty-first embodiment is described, further comprising a replaceable contact pad disposed on the terminal actuator body, the replaceable contact pad comprising a contact pad head having a contact surface configured to contact a substrate, and a shaft coupled to the contact pad head and received in a hole formed in the body of the terminal actuator and extending into the recess.

[0169] In a thirty-third embodiment, the end effector of the thirty-second embodiment is described, wherein the coating is deposited on the surface of the end effector body and the contact surface of the contact pad.

[0170] In a thirty-fourth embodiment, a method is described, the method comprising: depositing a coating onto a surface of an end effector of a robotic arm using an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process, the coating comprising an electrically dissipative material, wherein the electrically dissipative material provides a dissipation path from the coating to ground, wherein the coating is uniform, conformal, and non-porous, wherein the coating has a thickness ranging from about 20 nm to about 500 nm, and wherein the coating has a surface area ranging from about 1 x 10 5 Ohm / square to about 1x1011 Ohm / square resistance.

[0171] In a thirty-fifth embodiment, the method of the thirty-fourth embodiment is described, wherein the step of depositing the coating using the ALD process includes performing a deposition cycle, the deposition cycle including: injecting a precursor containing a first material into a deposition chamber containing the terminal effector body, so that the precursor containing the first material is adsorbed onto the surface of the terminal effector body to form a first half reaction; injecting a first reactant into the deposition chamber to form a second half reaction; repeating the steps of injecting the precursor containing the first material and injecting the first reactant one or more times until the coating is deposited. The method further comprises injecting a precursor containing a second material into the deposition chamber so that the precursor containing the second material is adsorbed onto the layer containing the first material to form a third half reaction; injecting a second reactant into the deposition chamber to form a fourth half reaction; and repeating the steps of injecting the precursor containing the second material and injecting the second reactant one or more times until a second target thickness of the layer containing the second material of the coating is achieved; and repeating the deposition cycle one or more times until the thickness ranging from about 20 nm to about 500 nm is achieved.

[0172] In a thirty-sixth embodiment, the method of the thirty-fifth embodiment is described, wherein the coating comprises an alternating stack of aluminum oxide and titanium oxide, wherein the precursor containing the first material is an aluminum-containing precursor, the aluminum-containing precursor comprising at least one of trimethylaluminum (TMA), diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, triethylaluminum (TEA), triisobutylaluminum, trimethylaluminum, or tris(diethylamido)aluminum; wherein the precursor containing the second material is a titanium-containing precursor, the titanium-containing precursor comprising at least one of tetrakis(dimethylamido)titanium; and wherein the first reactant and the second reactant independently comprise at least one of the following: water, ozone, ethanol, and oxygen.

[0173] In a thirty-seventh embodiment, the method of the thirty-sixth embodiment is described, wherein the ratio of the thickness of each aluminum oxide layer to the thickness of each titanium oxide layer in the alternating stack of aluminum oxide and titanium oxide ranges from about 10:1 to about 1:1.

[0174] In a thirty-eighth embodiment, a substrate processing system is described, comprising: a chamber; a robot arm disposed in the chamber; and a robot arm connected to the robot arm, the robot arm comprising: a terminal effector body; a replaceable contact pad disposed on the terminal effector body, the replaceable contact pad comprising a contact pad head having a contact surface configured to contact a substrate, and a shaft coupled to the contact pad head and received in a hole formed in the body of the terminal effector and extending into a recess; and a coating deposited on a surface of the terminal effector body and on the contact surface of the contact pad head, the coating comprising an electrically dissipative material, wherein the electrically dissipative material is used to provide a dissipation path from the coating to ground, and wherein the coating is uniform and conformal.

[0175] In a thirty-ninth embodiment, the substrate processing system of the thirty-eighth embodiment is described, wherein the end effector body comprises a conductive material, ceramic, or quartz, wherein the coating has a thickness ranging from about 1×10 5 Ohm / square to about 1x10 11 ohms / square, wherein the coating has a thickness ranging from about 20 nm to about 500 nm, and wherein the coating is non-porous.

[0176] In a fortieth embodiment, the substrate processing system of the thirty-eighth embodiment is described, wherein the end effector body comprises bulk alumina, and wherein the electrically dissipative material comprises alternating stacks of alumina and titania.

[0177] In the foregoing description, many specific details (such as specific materials, dimensions, process parameters, etc.) are described to provide a thorough understanding of the present invention. Specific features, structures, materials, or characteristics can be combined in any suitable manner in one or more embodiments. The words "example" or "exemplary" are used herein to mean used as an example, instance, or illustration. Any aspect or design described herein as "example" or "exemplary" is not necessarily to be interpreted as being preferred or advantageous relative to other aspects or designs. Instead, the use of the words "example" or "exemplary" is merely intended to present the concept in a specific way. As used in this application, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or". That is, unless otherwise specified or as can be clearly seen from the context, "X includes A or B" is intended to mean any one of the natural inclusive arrangements. That is, if X includes A; X includes B; or X includes both A and B, then "X includes A or B" is satisfied in any of the foregoing cases. Reference throughout this specification to "one embodiment," "some embodiments," or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of the phrases "one embodiment," "some embodiments," or "an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment.

[0178] The present invention has been described with reference to specific exemplary embodiments thereof. Accordingly, the specification and drawings are to be regarded in an illustrative rather than a restrictive sense. Various modifications of the invention in addition to those shown and described herein will be apparent to those skilled in the art and are intended to fall within the scope of the appended claims.

Claims

1. A coated chamber component comprising: chamber components; and A coating deposited on a surface of the chamber component, the coating comprising an electrically dissipative material, wherein the electrically dissipative material provides a dissipative path from the coating to ground, wherein the coating is uniform, conformal, and non-porous, wherein the coating has a thickness ranging from 10 nm to 900 nm, wherein the coating has a thickness ranging from 1 x 10 5 Ohm / square to 1x10 11 ohm / square, and wherein the coating comprises an alternating stack of layers comprising a first material and layers comprising a second material, the layers comprising the first material being composed of a metal or a metal alloy comprising at least one of Al, Y-Zr, Mg-Al, or Ca-Al, and the layers comprising the second material being composed of a transition metal, a rare earth, a main group metal, a semiconductor, or an alloy thereof. 2 . The coated chamber component of claim 1 , wherein the sheet resistance of the coating remains unchanged after thermal cycling at temperatures ranging from 300° C. to 700° C. 3 .

3. The coated chamber component of claim 1, wherein the coating has a thickness ranging from 20 nm to 900 nm.

4. The coated chamber component of claim 1, wherein the chamber component comprises a conductive material, a ceramic, a polymer, or quartz.

5. The coated chamber component of claim 1, wherein the coating has a range from 500 kg / mm 2 Up to 1000kg / mm 2 Vickers hardness.

6. The coated chamber component of claim 1, wherein the sheet resistance of the coating is uniform as demonstrated by a sheet resistance variation of less than ±35% across the coating.

7. The coated chamber component of claim 1, wherein the second material-containing layer consists of one or more of Ti, Fe, Co, Cu, Ni, Mn, V, Y, Nb, In, Sn, Fe-Co, La-Ta.

8. The coated chamber component of claim 1, wherein a ratio of a thickness of each first material-containing layer to a thickness of each second material-containing layer in the alternating stack ranges from 50:1 to 1:

50.

9. The coated chamber component of claim 1, wherein the coating is resistant to corrosive plasma.

10. A method of coating a chamber component, comprising: depositing a coating onto a surface of the chamber component using an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, a plasma enhanced atomic layer deposition (PEALD) process, a metal organic chemical vapor deposition (MOCVD) process, or a molecular beam epitaxy (MBE) process, the coating comprising an electrically dissipative material, wherein the electrically dissipative material provides a dissipative path from the coating to ground, wherein the coating is uniform, conformal, and non-porous, wherein the coating has a thickness ranging from 10 nm to 900 nm, and wherein the coating has a thickness ranging from 1 x 10 5 Ohm / square to 1x10 11 Ohms / square sheet resistance, and The coating comprises an alternating stack of layers containing a first material and layers containing a second material, the layers containing the first material being composed of a metal or a metal alloy, the metal or the metal alloy comprising at least one of Al, Y-Zr, Mg-Al or Ca-Al, and the layers containing the second material being composed of a transition metal, a rare earth, a main group metal, a semiconductor or an alloy thereof.

11. The method of claim 10, wherein depositing the coating using the ALD process comprises performing a deposition cycle comprising: injecting a precursor containing a first material into a deposition chamber including the chamber component, so that the precursor containing the first material is adsorbed onto the surface of the chamber component to form a first half reaction; injecting a first reactant into the deposition chamber to form a second half reaction; Repeating the steps of injecting the precursor containing the first material and injecting the first reactant one or more times until a first target thickness of the layer containing the first material of the coating is achieved; injecting a precursor containing a second material into the deposition chamber so that the precursor containing the second material is adsorbed onto the layer containing the first material to form a third half reaction; injecting a second reactant into the deposition chamber to form a fourth half-reaction; and Repeating the steps of injecting the precursor containing the second material and injecting the second reactant one or more times until a second target thickness of the layer containing the second material of the coating is achieved; and The deposition cycle is repeated one or more times until the thickness ranging from 20 nm to 500 nm is achieved. 12 . The method of claim 10 , wherein a ratio of the first target thickness to the second target thickness ranges from 50:1 to 1:

50.

13. The method of claim 10, wherein the first target thickness and the second target thickness can be independently varied between deposition cycles.

14. The method of claim 10, wherein the sheet resistance of the coating is uniform as demonstrated by a sheet resistance variation of less than ±35% across the coating.

15. The method of claim 10, wherein the second material-containing layer consists of one or more of Ti, Fe, Co, Cu, Ni, Mn, V, Y, Nb, In, Sn, Fe-Co, and La-Ta.

16. An electrically dissipative coating comprising an electrically dissipative material, wherein the coating is uniform, conformal, and non-porous, wherein the coating has a thickness ranging from 20 nm to 500 nm, and wherein the coating has a 5 Ohm / square to 1x10 11 Ohms / square sheet resistance, and The coating comprises an alternating stack of layers containing a first material and layers containing a second material, the layers containing the first material being composed of a metal or a metal alloy, the metal or the metal alloy comprising at least one of Al, Y-Zr, Mg-Al or Ca-Al, and the layers containing the second material being composed of a transition metal, a rare earth, a main group metal, a semiconductor or an alloy thereof.

17. The electrically dissipative coating of claim 16, wherein the electrically dissipative material comprises an alternating stack of layers comprising the first material and layers comprising the second material, wherein the layer containing the second material is composed of one or more of Ti, Fe, Co, Cu, Ni, Mn, V, Y, Nb, In, Sn, Fe-Co, and La-Ta, wherein the coating has a range from 500 kg / mm 2 Up to 1000kg / mm 2 Vickers hardness, and Wherein the sheet resistance of the coating is uniform as shown by a sheet resistance variation of less than ±35% across the coating.

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