Rectifier plate, fluid introduction device and film forming device

Abstract

A rectifying plate capable of suppressing the variation of the film forming speed on a film forming object is provided. According to an embodiment, the rectifying plate has a low flow path resistance region and a plurality of high flow path resistance regions, the rectifying plate is arranged opposite to a plurality of nozzles for ejecting fluid, and rectifying the fluid, the high flow path resistance region has a nozzle opposing region respectively opposing the plurality of nozzles, the low flow path resistance region surrounds the plurality of high flow path resistance regions respectively, a plurality of first through holes are formed, and the flow path resistance is smaller than that of the high flow path resistance region.

Description

Technical Field

[0001] Embodiments of the present invention relate to a rectifying plate, a fluid introducing device having the rectifying plate, and a film forming device having the fluid introducing device. Background Art

[0002] There is known a fluid introduction device that ejects gas from a nozzle and introduces the gas into a chamber through a rectifying plate having through holes. Also, there is known a film forming device that uses such a fluid introduction device to introduce gas into a chamber and forms a film on a substrate such as a wafer.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2012-126968

[0006] Patent Document 2: Patent Publication No. 4819411

[0007] Patent Document 3: Japanese Patent Application Publication No. 2013-149513 Summary of the invention

[0008] The technical problem to be solved by the present invention is to provide a rectifying plate, a fluid introducing device, and a film forming device capable of suppressing the variation in the film forming speed on a film forming object.

[0009] According to an embodiment, a rectifying plate has a low flow resistance area and multiple high flow resistance areas. The rectifying plate is arranged opposite to multiple nozzles for spraying fluid to rectify the fluid. The high flow resistance area has a nozzle opposing area that is respectively opposite to the multiple nozzles. The low flow resistance area surrounds the multiple high flow resistance areas respectively to form multiple first through holes, and the flow resistance is smaller than that of the high flow resistance area. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a schematic perspective view showing film forming apparatuses according to the first embodiment, comparative example 1, and the second embodiment.

[0011] Figure 2 is from Figure 1 A plan view of the film forming apparatus of the first embodiment and the second embodiment observed in the direction indicated by arrow II in FIG.

[0012] Figure 3 The film forming apparatus of the first embodiment and the second embodiment is shown in FIG. Figure 2 A schematic diagram showing the positional relationship between the rectifying plate and the nozzle of the fluid introduction device shown.

[0013] Figure 4 yes Figure 2and Figure 3 IV-IV section view in FIG.

[0014] Figure 5 It is a schematic perspective view showing a distribution of film forming speed on a stationary substrate in the film forming apparatus according to the first embodiment.

[0015] Figure 6 This is a schematic cross-sectional view showing the positional relationship between the flow straightening plate and the nozzle when the flow straightening plate of the fluid introduction device according to the first embodiment is attached with a displacement of 0.3 mm from the reference position of the chamber.

[0016] Figure 7 It is a schematic perspective view showing a distribution of film forming speed on a stationary substrate in the film forming apparatus according to the first embodiment.

[0017] Figure 8 The film forming apparatus of the first embodiment is shown in FIG. Figure 5 and Figure 7 The graph shown is a graph of the relationship between the distance from the central axis of the substrate and the film formation speed.

[0018] Fig. 9 This is a schematic diagram showing the positional relationship between the rectifying plate and the nozzle of the fluid introduction device of the film forming apparatus of Comparative Example 1.

[0019] Fig.10 Comparative Example 1 Fig. 9 XX section view in.

[0020] Fig.11 This is a schematic perspective view showing the distribution of film forming speed on a stationary substrate in the film forming apparatus of Comparative Example 1.

[0021] Fig.12 This is a schematic cross-sectional view showing the positional relationship between the flow straightening plate and the nozzle when the flow straightening plate of the fluid introduction device of Comparative Example 1 is attached with a deviation of 0.3 mm from the reference position of the chamber.

[0022] Fig.13 This is a schematic perspective view showing the distribution of film forming speed on a stationary substrate in the film forming apparatus of Comparative Example 1.

[0023] Fig.14 The film forming apparatus of Comparative Example 1 is shown in FIG. Fig.11 and Fig.13 The graph shown is a graph of the relationship between the distance from the central axis of the substrate and the film formation speed.

[0024] Fig.15 This is a schematic plan view showing a rectifying plate of a fluid introduction device of a film forming apparatus according to a second embodiment.

[0025] Fig.16 Yes means Fig.15 The position shown in the figure is shown by symbol XVI.

[0026] Fig.17 yes Fig.15 Section view XVII-XVII in the figure.

[0027] Fig.18 This is a schematic perspective view showing the distribution of film forming speed at any time on a rotated substrate of a film forming apparatus in which the rectifying plate according to the second embodiment is arranged to be offset by X+1.5 mm with respect to the reference position of the chamber.

[0028] Fig.19 This is a schematic perspective view showing the distribution of film forming speed at any time on a substrate after rotation in a film forming apparatus in which the rectifying plate according to the second embodiment is arranged to be offset by X-1.5 mm with respect to the reference position of the chamber.

[0029] Fig. 20 This is a graph showing the relationship between the distance from the central axis of the substrate and the time-averaged film formation rate in a film formation apparatus in which the rectifying plate according to the second embodiment is arranged offset from the reference position of the chamber.

[0030] Fig.21 It is a schematic plan view showing a flow straightening plate according to a first modified example of the second embodiment.

[0031] Fig. 22 This is a graph showing the relationship between the distance from the central axis of the substrate and the film forming speed in a film forming apparatus in which the rectifying plates according to the first modification of the second embodiment are arranged offset from the reference position of the chamber.

[0032] Fig.23 This is a mathematical formula for finding the difference in film formation rate from the center to the edge of the substrate.

[0033] Fig.24 It is a schematic plan view showing a flow straightening plate according to a second modified example of the second embodiment.

[0034] Fig.25 It means that Fig.24 The contour diagram is a diagram showing a state in which, when a film is formed on a substrate with the rectifying plate attached to the reference position of the chamber, no upward flow of gas is generated in the chamber directly below the rectifying plate.

[0035] Fig.26 This means that the second embodiment Fig.15 The diagram is a contour diagram of the rising flow of gas in the chamber directly below the rectifying plate when a film is formed on a substrate in a state where the rectifying plate is attached to the reference position of the chamber.

[0036] Fig. 27It is a schematic plan view showing a flow rectifying plate of a comparative example.

[0037] Fig.28 It means that Fig. 27 The diagram is a contour diagram of the rising flow of gas in the chamber directly below the rectifying plate when a film is formed on a substrate in a state where the rectifying plate is attached to the reference position of the chamber. DETAILED DESCRIPTION

[0038] Hereinafter, a first embodiment and a second embodiment will be described with reference to the drawings.

[0039] [First embodiment]

[0040] Figure 1 2 shows a film forming apparatus 10 for epitaxially growing a single crystal film on a surface of a substrate 8 such as a wafer using a CVD (Chemical Vapor Deposition) method. The film forming apparatus 10 includes, for example, a cylindrical chamber 12, a fluid introduction device (rectifier) ​​14 detachably fixed to one end (upper portion) of the chamber 12, an exhaust portion 16 disposed at the other end (lower portion) of the chamber 12, and a rotating table 18 for the substrate 8 disposed in the chamber 12.

[0041] One end of the chamber 12 is arranged at the upper end of the chamber 12, and the other end of the chamber 12 is arranged at the lower end of the chamber 12. The chamber 12 is preferably formed to be rotationally symmetrical with respect to the central axis C. A fluid introduction device 14 is fixed to one end of the chamber 12. An exhaust portion 16 is provided at the other end of the chamber 12. The inside of the chamber 12 may be atmospheric pressure, or may be set to a lower pressure than atmospheric pressure by, for example, a suction pump not shown connected to the exhaust portion 16. Here, a case where the inside of the chamber 12 is set to a lower pressure than atmospheric pressure is described.

[0042] The rotating table 18 is provided below the chamber 12. The rotating table 18 can hold the substrate 8. The rotating table 18 can rotate relative to the chamber 12 around the axis of the central axis C of the chamber 12 by the action of a motor (not shown) or the like. The rotating axis of the rotating table 18 is preferably consistent with the central axis C of the chamber 12. Therefore, the film forming apparatus 10 can rotate the substrate 8 at a rotation speed of 1000 rpm by rotating the rotating table 18 around the central axis C of the chamber 12, for example, at a rotation speed of 1000 rpm while the substrate 8 is held on the rotating table 18.

[0043] In the present embodiment, as an example, the substrate 8 is in the shape of a disk having a diameter of 6 inches (about 150 mm).

[0044] The fluid introduction device 14 has a rectifying plate 22 for rectifying the fluid and a plurality of nozzles 24 for spraying a plurality of gases from a gas source (not shown) outside the film forming device 10 toward the rectifying plate 22. The rectifying plate 22 is opposed to the nozzles 24 for spraying the fluid. In addition, as an example, the fluid introduction device 14 is constructed as follows: it has a cover (closing plate) 26 for preventing leakage of the gas, and the plurality of nozzles 24 penetrate the cover 26. The outer peripheral surface of each nozzle 24 is sealed with the cover 26. That is, in order to prevent leakage of the gas introduced into the film forming device 10, one end of the chamber 12 is closed by the cover 26 of the fluid introduction device 14. The fluid introduction device 14 has a space (fluid introduction part) 28 for supplying gas between the cover 26 and the rectifying plate 22.

[0045] Figure 2 The film forming apparatus 10 according to the first embodiment is shown. Figure 1 A top view of the nozzle 24 and the straightening plate 22 as viewed from the direction indicated by arrow II in FIG. Figure 3 Relative to the rectifier plate 22 Figure 2 A schematic diagram of the baffle 22 is shown with the location of the nozzle 24 depicted by a dashed line. Figure 4 The diagram along which the positional relationship between the rectifying plate 22 and the nozzle 24 when the rectifying plate 22 is installed at the reference position relative to the chamber 12 of the film forming apparatus 10 according to the first embodiment is shown. Figure 2 and Figure 3 A schematic cross-sectional view showing the position of line IV-IV in FIG. Figure 5 Indicates that Figure 4 The rectifier plate 22 shown is installed on Figure 1 The film forming apparatus 10 shown in FIG. 1 is a perspective view of a distribution of film forming speed on the substrate 8 when a film is formed on the stationary substrate 8 in a state at one end of the chamber 12 . Figure 6 It is a schematic cross-sectional view showing the positional relationship between the rectifying plate 22 and the nozzle 24 when the rectifying plate 22 is attached to the chamber 12 so as to be offset by 0.3 mm within the range of the allowable error with respect to the reference position. Figure 7 Indicates that Figure 6 The rectifier plate 22 shown is installed on Figure 1 The film forming apparatus 10 shown in FIG. 1 is a perspective view of a distribution of film forming speed on the substrate 8 when a film is formed on the stationary substrate 8 in a state at one end of the chamber 12 .

[0046] like Figures 2 to 4 and Figure 6 As shown, the rectifying plate 22 is formed into a disk shape by a light-transmitting material such as quartz. Figure 1 The central axis C of the chamber 12 and the rotation axis of the rotating table 18 are preferably consistent. Figure 4 In the example shown, the central axis of the rectifying plate 22, the central axis C of the chamber 12, and the rotation axis of the rotating table 18 are aligned. Figure 6 In the example shown, the center axis of the rectifying plate 22 is parallel to the center axis C of the chamber 12 and the rotation axis of the turntable 18 , but is offset by 0.3 mm from the center axis C of the chamber 12 and the rotation axis of the turntable 18 .

[0047] The diameter of the rectifying plate 22 is, in this embodiment, for example, 186 mm, which is about 1.2 times the diameter of the substrate 8. In addition, the inner diameter of the region in the chamber 12 between one end of the chamber 12 and the turntable 18 is formed to be approximately the same size as the diameter of the rectifying plate 22, or larger than the diameter of the rectifying plate 22.

[0048] The rectifying plate 22 is detachably fixed to one end of the chamber 12. The rectifying plate 22 is replaceable. At this time, the allowable error when the rectifying plate 22 is fixed to one end of the chamber 12 is, for example, a predetermined size such as ±0.3 mm in the radial direction relative to the central axis C.

[0049] like Figure 2 and Figure 3 As shown, the rectifying plate 22 has a closed portion (high flow resistance region with infinite flow resistance) 32 and a low flow resistance region 33 having a plurality of through holes (first through holes) 34 arranged in a manner surrounding the closed portion (high flow resistance region) 32. The plurality of through holes 34 are respectively formed as flow paths for the gas. Here, flow resistance refers to the force that hinders the flow of a fluid due to a certain shape when the fluid passes through a flow path of the shape.

[0050] The through holes 34 are formed, for example, basically at a predetermined interval (pitch), but have a portion of regions with different intervals. The opening amounts (opening diameters) of the through holes 34 are preferably the same, but may be different. The opening amount is appropriately set to a diameter of about 2.6 mm to 3.5 mm, for example. From the vicinity of the central axis of the rectifying plate 22 to the vicinity of the periphery, the size and number of the through holes 34 per unit area are preferably constant. As an example, the through holes 34 are arranged in a grid-like position. The pitch width of the through holes 34 is, for example, 8 mm.

[0051] In addition, the through holes 34 of the rectifying plate 22, which are located near the outer periphery farthest from the central axis of the rectifying plate 22, are preferably located directly above the outer periphery of the substrate 8 or outside the outer periphery of the substrate 8. In this case, it is easy to form a film uniformly also at the outer periphery of the substrate 8.

[0052] Figure 4 and Figure 6 The nozzles 24 shown are arranged, for example, to spray the film forming gas in parallel with the central axis of the rectifying plate 22. In the present embodiment, it is preferable that the spraying direction of the gas from the plurality of nozzles 24 is parallel to the central axis C of the chamber 12.

[0053] like Figures 2 to 4 and Figure 6 As shown, each nozzle 24 is opposed to a closed portion (high flow resistance region) 32 so as to eject a fluid toward the closed portion (high flow resistance region) 32. The front end of each nozzle 24 is separated from the closed portion (high flow resistance region) 32. The closed portion (high flow resistance region) 32 varies depending on the shape of the nozzle 24, the flow rate of the ejected gas or other fluid, the ejection angle, which is the angle at which the ejected gas or other fluid spreads, the ejection width, which is the ejection width at the distance reached from the front end of the nozzle 24, the ejection pattern, which is the cross-sectional shape of the ejected gas or other fluid when it spreads, but is an area where the gas is directly ejected from the nozzle 24. On the other hand, the low flow resistance region 33, which is an area outside the closed portion (high flow resistance region) 32 and is provided with a plurality of through holes 34, is an area where the gas is not directly ejected from the nozzle 24, and the through hole 34 closest to the nozzle opposing region 36, which is opposed to the front end of the nozzle 24, among the plurality of through holes (first through holes) 34, is arranged at a position where the gas ejected from the nozzle 24 is indirectly introduced. That is, the through hole 34 is formed outside the injection pattern formed by the gas injected from the nozzle 24, based on the relationship between the nozzle 24 and the injection angle at the distance (injection distance) between the rectifying plate 22. The through hole 34 closest to the nozzle opposing area 36 among the plurality of through holes 34 is formed in an area other than the injection pattern at the injection distance specified as the distance between the front end of the nozzle 24 and the closing portion 32.

[0054] That is, the closed portion (high flow path resistance region) 32 has a nozzle facing region 36 (see Figure 3 , Figure 4 , Figure 6 ). The nozzle facing area 36 is a non-through-hole area located in an area other than the through-hole 34 and not provided with the through-hole 34. In other words, the fluid introduction device 14 is provided with a nozzle 24 for ejecting a fluid at a position not facing the through-hole 34. The nozzle facing area 36 is formed in an area where the intervals of the through-holes 34 formed substantially regularly (at the same intervals) are different.

[0055] In addition, the opening diameter of the nozzle 24 is, for example, 13 mm.

[0056] In this embodiment, if Figure 2 and Figure 3As shown in FIG. 1 , when the rectifying plate 22 is viewed from the upper side, the rectifying plate 22 is formed line-symmetrically with respect to a virtual line (X-axis) passing through the centers of three pyrometer nozzles 44 described later, from the central axis of the rectifying plate 22 toward the radially outer side. In the present embodiment, the through-holes 34 are formed at positions that are point-symmetrical or substantially point-symmetrical with respect to the central axis of the rectifying plate 22, or line-symmetrical or substantially line-symmetrical with respect to a predetermined axial position of the central axis of the rectifying plate 22 along the closed portion (high flow path resistance region) 32.

[0057] In addition, in the present embodiment, the fluid introduction device 14 has a pyrometer nozzle 44 for indirectly monitoring the temperature of the substrate 8 by means of a pyrometer. A purge gas is introduced into the pyrometer nozzle 44, and a purge gas is introduced into the pyrometer nozzle 44 at a position (pyrometer nozzle facing region 46 (refer to FIG. 4 )) facing the pyrometer nozzle 44. Figure 3 )) is not provided with the through hole 34. In other words, the fluid introduction device 14 is provided with the pyrometer nozzle 44 at a position not facing the through hole 34. The pyrometer receives the light (infrared light) radiated from the substrate 8 through the rectifying plate 22 and the pyrometer nozzle 44 which are light-transmitting materials to measure the temperature.

[0058] The opening diameter of the pyrometer nozzle 44 is about the same as that of the nozzle 24, for example, 13 mm. The opening diameter of the pyrometer nozzle 44 may be larger or smaller than that of the nozzle 24.

[0059] Next, the operation of the fluid introduction device 14 of the film forming apparatus 10 according to the first embodiment will be described.

[0060] While using Figure 1 The substrate 8 on the rotating table 18 shown is rotated at, for example, 1000 rpm, while the gas is sprayed from the nozzle 24 toward the closed portion (high flow resistance area) 32 of the rectifying plate 22 of the fluid introduction device 14 as a plurality of fluids. At this time, the through hole 34 is preferably outside the range of the spray pattern of each of the plurality of gases. Figure 4 As shown, the plurality of gases injected toward the closed portion 32 reach the closed portion 32 on the surface of the rectifying plate 22 at a predetermined injection angle, and then spread radially from the closed portion 32 to reach the through hole 34 .

[0061] In addition, as energy for causing the gas to undergo a chemical reaction in the chamber 12 , for example, heat or the like is used.

[0062] The gas flowing from the closed portion (high flow resistance region) 32 toward the through hole 34 flows from one end of the chamber 12 to the other end of the chamber 12 through the through hole 34. That is, by causing the fluid to flow into the chamber 12 through the through hole 34 of the fluid introduction device 14, a plurality of gases are introduced into the chamber 12, and a film is formed on the substrate 8.

[0063] On the other hand, in the above Figure 4 In the example shown, the rectifying plate 22 is set in the reference position (regular installation position). Figure 6 In the example shown, the rectifying plate 22 is disposed so as to be offset by 0.3 mm with respect to the reference position.

[0064] exist Figure 5 In FIG. 1 , it is shown that the rectifier plate 22 is installed on Figure 4 The simulation result of the film forming speed distribution on the substrate 8 when the chamber 12 is at the reference position shown in FIG. Figure 7 In the figure, it is shown that Figure 6 The simulation result of the film forming speed distribution on the substrate 8 when the chamber 12 is mounted so as to have an error of 0.3 mm from the reference position is shown. Figure 5 and Figure 7 The film forming velocity distribution in is expressed as Figure 5 The lowest speed in is taken as the relative speed at 1.0. In addition, Figure 5 and Figure 7 The simulation results shown show the results of film formation without rotating the turntable 18 but with the substrate 8 at rest. It can be seen that the film formation speed increases at a position slightly offset from the center of the substrate 8, showing the same tendency.

[0065] In addition, Figure 4 The example shown, Figure 6 The film forming speed in the substrate 8 in each of the examples shown is simulated, and the results are as follows Figure 8 As shown. Figure 4 When the rectifying plate 22 is installed at the reference position (normal installation position) without error relative to one end of the chamber 12 (depicted by a black circle) and Figure 6 When the rectifying plate 22 is installed with a 0.3 mm error from the reference position relative to one end of the chamber 12 (shown as a white circle), no significant change is observed. In this case, the variation rate of the film forming speed at the center of the substrate 8 is suppressed to about 6%.

[0066] (Comparative Example 1)

[0067] Here, use Figures 9 to 14 The flow rectifying plate 122 of Comparative Example 1 will be described.

[0068] like Fig. 9 , Fig.10 , Fig.12 As shown, Comparative Example 1 has the same positional relationship between the straightening plate 122 and the nozzle 124 as that of the fluid introduction device 14 of the first embodiment, except that the positional relationship between the straightening plate 122 and the nozzle 124 of the fluid introduction device 14 is different from that of the first embodiment.

[0069] Fig. 9 The positional relationship between the flow straightening plate 122 and the nozzle 124 of Comparative Example 1 of the fluid introduction device 14 is shown. Fig.10 The positional relationship between the rectifying plate 122 and the nozzle 124 when the rectifying plate 122 is installed at the reference position relative to the chamber 12 of the film forming apparatus 10 of Comparative Example 1 is shown along Fig. 9 A schematic cross-sectional view showing the position of line XX in FIG. Fig.12 It is a schematic cross-sectional view showing the positional relationship between the rectifying plate 122 and the nozzle 124 when the rectifying plate 122 is attached to one end of the chamber 12 of the film forming apparatus so as to be offset by 0.3 mm from the reference position within the range of the allowable error.

[0070] Different from the first embodiment, in Comparative Example 1, Fig. 9 , Fig.10 as well as Fig.12 As shown in FIG. 1 , each nozzle 124 is not opposed to the closed portion (high flow resistance region) 132, but is opposed to the through hole 134. That is, the through hole 134 is formed directly below the nozzle 124. When the positional relationship between the nozzle 124 and the rectifying plate 122 is a predetermined position and there is no positional deviation, Fig.10 In this case, the central axis of the nozzle 124 and the central axis of the through hole 134 are preferably coaxial.

[0071] Fig.11 The figure shows the Fig.10 The perspective view is a simulation result of the film forming speed distribution on the substrate 8 when the rectifying plate 122 is installed at the reference position without error at one end of the chamber 12. Fig.13 The figure shows the Fig.12 The illustrated perspective view is a simulation result of the film formation speed distribution on the substrate 8 when the rectifying plate 122 is attached to one end of the chamber 12 so as to have an error of 0.3 mm with respect to the reference position. Fig.11 and Fig.13 The film forming velocity distribution in is expressed as Fig.13 The relative speed when the minimum speed in is set to 1.0. Fig.11 and Fig.13 The simulation results shown in the figure show the results of film formation when the substrate 8 is kept stationary without rotating the turntable 18. Fig.11 In the case of the film forming speed distribution, the film forming speed distribution becomes larger at the center of the substrate 8. Fig.13 In the case of a position slightly offset from the center of the substrate 8, the film forming speed distribution becomes larger. Fig.11 and Fig.13 From the simulation results shown, it can be seen that the tendency of the film formation rate distribution is different.

[0072] In addition, Fig.10 The example shown, Fig.12 The film forming speed in the substrate 8 in each of the examples shown was simulated. Fig.14 As shown in the figure, it can be seen that when the rectifying plate 122 is installed at the reference position without error relative to one end of the chamber 12 (indicated by the black circle), the film forming speed becomes faster and the film forming speed changes greatly compared with when it is installed with an error of 0.3 mm from the reference position (indicated by the white circle). At this time, the variation rate of the film forming speed at the center of the substrate 8 is about 20%.

[0073] (Comparison between the present embodiment and comparative example 1)

[0074] In Comparative Example 1, since the through hole 134 is formed directly below the nozzle 124, a part of the gas ejected from the nozzle 124 directly passes through the through hole 134. Furthermore, when the rectifying plate 122 is installed with a displacement of 0.3 mm from the reference position relative to the chamber 12, the relative positions of the nozzle 124 and the through hole 134 of the rectifying plate 122 are displaced, thereby changing the inflow direction, speed, etc. of the gas introduced from the nozzle 124 directly through the through hole 134 into the chamber 12. Therefore, it is considered that a 20% difference occurs in the film formation speed at the center of the substrate 8.

[0075] On the other hand, in the present embodiment, since the closed portion (high flow resistance region) 32 is formed directly below the nozzle 24, the gas ejected from the nozzle 24 does not directly pass through the through hole 34, but reaches the closed portion (high flow resistance region) 32 and spreads radially before being introduced into the chamber 12 through the through hole 34. Therefore, the rectifying plate 22 is installed by shifting 0.3 mm from the reference position relative to the chamber 12, and even if the relative position of the nozzle 24 and the through hole 34 of the rectifying plate 22 is shifted by 0.3 mm, the change in the film forming speed caused by the shift is suppressed to about 6%.

[0076] Therefore, the film forming apparatus 10 , the fluid introduction device 14 , and the rectifying plate 22 of the present embodiment can suppress the variation in the film forming speed on the substrate 8 caused by the mounting error of the rectifying plate 22 with respect to the chamber 12 .

[0077] The fluid introduction device 14 of this embodiment can be used not only when a gas is ejected from the nozzle 24 but also when a liquid is ejected.

[0078] In the present embodiment, an example in which the flow straightening plate 22 is in a disk shape has been described. The flow straightening plate 22 is not limited to a disk shape, and various shapes such as an elliptical shape and a rectangular shape are permitted.

[0079] [Second Embodiment]

[0080] Next, use Figures 15 to 20The second embodiment is a modified example of the first embodiment, and the same components or components having the same functions as those described in the first embodiment are denoted by the same reference numerals as much as possible, and detailed descriptions thereof are omitted.

[0081] Fig.15 A schematic plan view of the rectifying plate 222 of the fluid introduction device 14 of the film forming apparatus 10 according to the second embodiment is shown. Fig.16 Shown in Fig.15 The position shown in the figure is shown by symbol XVI. Fig.17 Shown in Fig.15 Section view XVII-XVII in the figure.

[0082] In this embodiment, an example of using a rectifying plate 222 instead of the rectifying plate 22 of the fluid introduction device 14 of the film forming apparatus 10 described in the first embodiment is described. The fluid introduction device 14 of the film forming apparatus 10 of this embodiment includes: a rectifying plate 222 for rectifying the fluid; a plurality of nozzles 24 for spraying a plurality of gases from a gas source toward the rectifying plate 222; and a plurality of pyrometer nozzles.

[0083] like Fig.15 As shown, the rectifying plate 222 of the present embodiment is the same size as the rectifying plate 22 described in the first embodiment and is cut into, for example, a disc shape. The rectifying plate 222 has, for example, three purge gas flow paths 246. The nozzle for the pyrometer for introducing the purge gas is arranged directly above the purge gas flow path 246 of the rectifying plate 222. The purge gas flow paths 246 are arranged, for example, at approximately equal intervals along a certain radial direction from the central axis of the rectifying plate 222. The central axis of each purge gas flow path 246 is located on the +X axis with the central axis of the rectifying plate 222 as the origin. In the purge gas flow path 246, for example, argon gas or hydrogen gas is passed into the chamber 12 through the rectifying plate 222 as a purge gas. Therefore, the purge gas is supplied into the chamber 12 through the purge gas flow path 246. In the present embodiment, the opening diameter of each purge gas flow path 246 is, for example, 18 mm.

[0084] like Fig.16As shown, the rectifying plate 222 has: a high flow resistance region 232 having a nozzle opposing region opposed to the nozzle 24; and a low flow resistance region 234, which is arranged in a manner to surround the high flow resistance region 232. A plurality of through holes 252, 254 serving as flow paths for the reaction gas used for film formation are arranged at a constant pitch on the rectifying plate 222. In the rectifying plate 222, a low flow resistance region 234 is formed outside the high flow resistance region 232. In the present embodiment, the plurality of through holes 252, 254 are arranged at a pitch of, for example, 8 mm. In addition, in the rectifying plate 222, there may be a position where the through holes 254 are not formed at a constant pitch. In the rectifying plate 222, there may also be a position where the first through hole 252 and the second through hole 254 are not formed at a constant pitch.

[0085] In addition, among the through holes 252 and 254 of the rectifying plate 222, the through holes 252 and 254 located near the outer periphery of the rectifying plate 222 farthest from the central axis of the rectifying plate 222 are preferably located directly above the outer periphery of the substrate 8 or outside the outer periphery of the substrate 8. In this case, it is easy to form a film uniformly also at the position of the outer periphery of the substrate 8.

[0086] The high flow resistance region 232 has a plurality of first through holes (second through holes) 252 of a first diameter. The low flow resistance region 234 is provided in a manner to surround the high flow resistance region 232, and has one or more second through holes (first through holes) 254 of a second diameter having a larger opening ratio than the first through holes 252 of the high flow resistance region 232. The first through hole 252 is formed to be smaller in diameter than the second through hole 254. For example, the diameter of the first through hole 252 is 5 mm, and the diameter of the second through hole 254 is 7 mm.

[0087] like Fig.15As shown, the rectifying plate 222 has a first zone Z1, a second zone Z2 and a third zone Z3 from the inside to the outside. The first zone Z1 is an area on the inside of a disk concentric with the central axis of the rectifying plate 222. The second zone Z2 is an annular area on the outside of the first zone Z1. The third zone Z3 is an annular area on the outside of the second zone Z2. The outer edge of the third zone Z3 is consistent with the outer edge of the rectifying plate 222. The distance between the central axis of the rectifying plate 222 and the outer edge of the first zone Z1 (the inner edge of the second zone Z2), the distance between the outer edge of the first zone Z1 and the outer edge of the second zone Z2 (the inner edge of the third zone Z3), and the distance between the outer edge of the second zone Z2 and the outer edge of the third zone Z3 are, for example, equidistant. Each zone Z1, Z2, and Z3 has a high flow path resistance area 232 and a low flow path resistance area 234, respectively. The first through holes 252 in the first zone Z1, the first through holes 252 in the second zone Z2, and the first through holes 252 in the third zone Z3 are each grouped in four. In these cases, the first through holes 252 in each zone Z1, Z2, and Z3 are located at the vertices of a square formed by line segments of a length equivalent to the constant pitch.

[0088] Fig.17 The opening diameter of the nozzle 24 shown is, for example, 13 mm. Fig.17 As shown, each nozzle 24 is opposed to the high flow resistance region 232 in such a manner as to eject fluid toward the high flow resistance region 232. The front end of each nozzle 24 is separated from the high flow resistance region 232 of the rectifying plate 222. A plurality of first through holes 252 are arranged at positions where the gas ejected from the nozzle 24 is directly introduced, based on the shape of the nozzle 24, the flow rate of the ejected gas or other fluid, the ejection angle, which is the angle at which the ejected gas or other fluid spreads, the ejection width, which is the extension width at the distance reached from the front end of the nozzle 24, the ejection pattern, which is the cross-sectional shape of the ejected gas or other fluid when it spreads, and the like. Therefore, the first through holes 252 are formed on the inner side of the outer edge of the ejection pattern formed by the gas ejected from the nozzle 24, based on the relationship between the nozzle 24 and the rectifying plate 222, such as the ejection angle at the distance (injection distance), and the like.

[0089] In addition, the central axis of the nozzle 24 is preferably arranged so as to intersect the centroid of a square having the centers of each of the four first through holes 252 as vertices.

[0090] On the other hand, the plurality of second through holes 254 of the low flow path resistance region 234 are arranged at a position where the gas ejected from the nozzle 24 is indirectly introduced. The second through holes 254 are formed outside the outer edge of the injection pattern formed by the gas ejected from the nozzle 24, based on the relationship of the injection angle and the like at the distance (injection distance) between the nozzle 24 and the rectifying plate 222. Therefore, the second through holes 254 closest to the high flow path resistance region 232 among the plurality of second through holes 254 are formed in a region other than the injection pattern of the injection distance defined as the distance between the tip of the nozzle 24 and the high flow path resistance region 232.

[0091] The positional relationship between the nozzle 24 and the first through hole 252 is preferably, for example, that they are separated by equal distances from the central axis of the nozzle 24. For example, the first through hole 252 may be formed on the central axis of the nozzle 24, and the first through hole 252 may be further formed in an annular shape outside the first through hole 252. That is, the central axis of the nozzle 24 may coincide with the central axis of one through hole 252 of each group of the first through hole 252. In this case, the nozzle 24 is not opposed to the second through hole 254 either.

[0092] The distance between the nozzle 24 and the rectifying plate 222 is set not only to the distance for the gas to flow to the first through hole 252 but also to the distance for the gas to flow to the second through hole 254. In the present embodiment, the distance between the nozzle 24 and the rectifying plate 222 is set to 2.5 mm, for example.

[0093] The flow of gas when a film is formed on the substrate 8 in the chamber 12 by attaching the flow rectifying plate 222 of the present embodiment to the chamber 12 in the same manner as the flow rectifying plate 22 described in the first embodiment will be described.

[0094] When the film forming gas is sprayed from the nozzle 24 toward the rectifying plate 222, part of the gas passes through the gas-formed Fig.16 and Fig.17 The first through hole 252 of the high flow resistance region 232 on the inner side of the spray pattern shown enters the chamber 12. The remaining gas contacts the upper surface of the rectifying plate 222 and spreads along the upper surface of the rectifying plate 222. Since the second through hole 254 of the low flow resistance region 234 is formed outside the spray pattern of the gas sprayed from the nozzle 24, a part of the gas enters the chamber 12 through the second through hole 254.

[0095] When the gas is introduced into the chamber 12 through the rectifying plate 222, the pressure distribution in the chamber 12 near the lower surface of the rectifying plate 222 changes. The opening diameter of the second through hole 254 is larger than that of the first through hole 252, and the gas can pass through the second through hole 254 more easily than the first through hole 252. In addition, the number of the second through holes 254 is greater than that of the first through holes 252. Therefore, the rectifying plate 222 can balance the flow rate of the gas directly entering the chamber 12 through the first through hole 252 and the flow rate of the gas entering the chamber through the second through hole 254. In addition, since the through holes 252 and 254 are arranged at a constant pitch, the deviation of the pressure distribution in the chamber 12 near the lower surface of the rectifying plate 222 can be suppressed.

[0096] For example, when the rectifying plate 22 described in the first embodiment is used, after the gas is sprayed toward the closed portion (high flow resistance region) 32, the gas is introduced into the chamber 12 through the through hole 34 outside the closed portion (high flow resistance region) 32. The gas is introduced into the chamber 12 through the through hole 34, so it is assumed that the pressure is high right below the through hole 34, and the pressure is reduced in the area on the lower surface side of the rectifying plate 22 between the adjacent through holes 34. Therefore, the gas flows on the lower surface side of the area with low pressure other than right below the through hole 34, causing agitation and backflow of the gas in the chamber 12, and it is possible that the control of the gas flow in the chamber 12 becomes difficult.

[0097] As described in the first embodiment, the rectifying plate 222 of the present embodiment can suppress the variation of the film forming speed on the substrate 8 caused by the installation error of the rectifying plate 222 relative to the chamber 12. In addition, the rectifying plate 222 of the present embodiment can suppress the deviation of the pressure distribution in the chamber 12 near the lower surface of the rectifying plate 222 through the first through hole 252. Therefore, by installing the rectifying plate 222 of the present embodiment in the chamber 12 for use, the stirring and backflow of the gas in the chamber 12 can be suppressed, and the control of the air flow in the chamber 12 becomes easy. In addition, by controlling the air flow in the chamber 12 for each zone Z1, Z2, and Z3, for example, the film forming speed can be controlled according to the distance from the center of the substrate 8.

[0098] In addition, the first through hole 252 and the second through hole 254 can be set to an appropriate size such as an appropriate diameter by maintaining the size relationship. In addition, although it also depends on the flow rate per unit time of the purge gas entering the chamber 12 through the purge gas flow path 246, the flow rate per unit time of the gas ejected from the nozzle 24, etc., by appropriately increasing the first through hole 252 and the second through hole 254, the flow of the gas line that contributes to film formation can be enhanced, and the influence of the flow of the purge gas supplied into the chamber 12 through the rectifying plate 222 can be suppressed.

[0099] Fig.18 2 shows the simulation result of the film forming speed distribution at any time on the substrate 8 after the film forming apparatus 10 is rotated when the rectifying plate 222 is installed with a shift of 1.5 mm in the +X axis direction from the reference position of the chamber 12 . Fig.18 The base plate 8 is shown in a perspective view. Fig.19 2 shows the simulation result of the film forming speed distribution at any time on the substrate 8 after the film forming apparatus 10 is rotated when the rectifying plate 222 is installed with a shift of 1.5 mm in the −X axis direction from the reference position of the chamber 12 . Fig.19 It is shown as a perspective view of the substrate 8. Here, 1.5 mm is larger than the allowable error of 0.3 mm with respect to the reference position when the rectifying plate 222 is mounted with respect to the chamber 12. Fig.18 and Fig.19 The film forming velocity distribution in is expressed as Fig.18 The relative speed when the minimum speed in is set to 1.0. Fig.18 In the example shown, the film forming speed increases near the center of the substrate 8. Fig.19 In the example shown, the film formation speed increases at a position offset from the center of the substrate 8 .

[0100] right Fig.18 The example shown, Fig.19 The film forming speed in the substrate 8 in the example shown was simulated, and the result was as follows. Fig. 20 shown. Fig. 20 This is a graph showing the relationship between the distance from the central axis of the substrate 8 and the time-averaged film formation rate in the film formation apparatus 10 in the second embodiment in which the rectifying plate 222 is arranged to be offset from the reference position of the chamber 12 . Fig. 20 The black circle diagram shown is an example in which the rectifying plate 222 is installed with respect to one end of the chamber 12 by shifting it by +1.5 mm in the X-axis direction from the reference position. Fig. 20 The white circle shown is an example of installing the rectifying plate 222 with respect to one end of the chamber 12 offset by -1.5 mm from the reference position in the X-axis direction. Fig. 20 Comparison of the black circle diagram and the white circle diagram in FIG. 1 shows that no significant change is found. This tendency is consistent with the first embodiment. Figure 8 The tendency shown is roughly consistent. In addition, the variation rate of the film forming speed at the center of the substrate 8 is suppressed to about 7%. As the installation position of the rectifying plate 222 relative to the chamber 12 approaches the reference position, four first through holes 252 are arranged at equal distances relative to the central axis of the nozzle 24. Therefore, when the rectifying plate 222 is installed in the chamber 12 for use, the variation rate of the film forming speed at the center of the substrate 8 can be further reduced.

[0101] Therefore, according to this embodiment, for example, a rectifying plate 222 capable of suppressing changes in the film forming speed of a film forming object before and after the rectifying plate 222 is replaced by maintenance, a fluid introduction device 14 having the rectifying plate 222, and a film forming device 10 having the fluid introduction device 14 can be provided.

[0102] In the present embodiment, four first through holes 252 are described as one group, but it is sufficient to provide one or more first through holes 252 in the high flow resistance region 232. As the flow resistance of the high flow resistance region 232 is greater than that of the low flow resistance region 234, the opening area density of the high flow resistance region 232 is smaller than that of the low flow resistance region 234. For example, two first through holes 252 may be arranged at a predetermined interval as one group, or three first through holes 252 may be arranged at the vertices of an equilateral triangle as one group. Even if five first through holes 252 are arranged at the vertices of a regular pentagon as one group, the same effect can be obtained. The first through holes 252 may be arranged as long as the deviation of the pressure distribution in the chamber 12 near the lower surface of the rectifying plate 222 can be suppressed.

[0103] In the present embodiment, the example of the first through hole 252 and the second through hole 254 being circular through holes is described. The first through hole 252 and the second through hole 254 may also be polygonal such as a triangle or a quadrilateral. In addition, the second through hole 254 may also be formed as a plurality of connected long holes or the like. The second through hole 254 may also be formed as a continuous hole that surrounds part or all of the periphery of the plurality of first through holes 252.

[0104] (First Modification)

[0105] use Fig.21 as well as Fig. 22 A first modified example of the second embodiment will be described.

[0106] Fig.21 A schematic top view of the rectifying plate 322 of this modified example is shown in FIG. Fig.21 , the nozzle 24 is omitted. In the rectifying plate 322 of this modification, the arrangement and number of the first through holes 252 and the second through holes 254 are different from those of the rectifying plate 222 described in the second embodiment. The pitch between the through holes 252 and 254 is 10 mm in the rectifying plate 322 of this modification.

[0107] like Fig.21As shown, the first through holes 252 in the first zone Z1 are grouped in groups of two. In this case, the first through holes 252 are located at one end and the other end of a line segment having a length equivalent to the constant spacing. The first through holes 252 in the second zone Z2 are grouped in groups of three. In this case, the first through holes 252 are located at the vertices of a right isosceles triangle having two line segments having a length equivalent to the constant spacing. The first through holes 252 in the third zone Z3 are grouped in groups of four. In this case, the first through holes 252 are located at the vertices of a square formed by line segments having a length equivalent to the constant spacing.

[0108] The nozzle 24 is arranged with respect to the rectifying plate 322 in the same positional relationship as the rectifying plate 222 with respect to the first through hole 252 in the second embodiment. That is, the nozzle 24 is opposed to the first through hole 252 having the high flow path resistance area 232 of the nozzle opposing area opposed to the nozzle 24 in each zone Z1, Z2, and Z3. When the film-forming gas is sprayed from the nozzle 24 to the rectifying plate 322, a part of the gas is introduced into the chamber 12 through the first through hole 252 on the inner side of the spray pattern formed by the gas. The remaining gas abuts against the upper surface of the rectifying plate 322 and spreads along the upper surface of the rectifying plate 322. Since the second through hole 254 is formed outside the spray pattern of the gas sprayed from the nozzle 24, a part of the gas is introduced into the chamber 12 through the second through hole 254.

[0109] When the gas enters the chamber 12 through the rectifying plate 322, the pressure distribution in the chamber 12 near the lower surface of the rectifying plate 322 changes. The size relationship between the diameters of the first through hole 252 and the second through hole 254 is the same as that of the rectifying plate 222 described in the second embodiment. Therefore, the rectifying plate 322 can balance the flow rate of the gas directly entering the chamber 12 through the first through hole 252 and the flow rate of the gas entering the chamber through the second through hole 254. In addition, since the through holes 252 and 254 are arranged at a constant pitch, the deviation of the pressure distribution in the chamber 12 near the lower surface of the rectifying plate 222 can be suppressed.

[0110] By installing the rectifying plate 322 of this embodiment in the chamber 12, stirring and backflow of the gas can be suppressed in the chamber 12, and the control of the gas flow in the chamber 12 becomes easy. In addition, for example, the gas flow in the chamber 12 can be controlled for each zone Z1, Z2, and Z3, so the film formation speed can be controlled according to the distance from the center of the substrate 8.

[0111] Therefore, according to this variation, for example, a rectifying plate 322 capable of suppressing changes in the film forming speed of a film forming object before and after the rectifying plate 322 is replaced by maintenance, a fluid introduction device 14 having the rectifying plate 322, and a film forming device 10 having the fluid introduction device 14 can be provided.

[0112] Here, Fig. 22 2 shows the relationship between the film forming speed distribution on the substrate 8 when the rectifying plate 322 of this modification is installed relative to the chamber 12 with a 1.5 mm offset from the center axis of the rectifying plate 322 in the +X axis direction of the three center axes of the purge gas flow path 246 and when the rectifying plate 322 is installed with a 1.5 mm offset from the center axis of the rectifying plate 322 in the -X axis direction on the opposite side of the three center axes of the purge gas flow path 246. In addition, 1.5 mm here is larger than the allowable error of 0.3 mm relative to the reference position when the rectifying plate 322 is installed relative to the chamber 12.

[0113] Then, if Fig.23 As shown in the mathematical formula shown in the figure, the difference in film forming speed at each point from the center (including the center) of the substrate 8 to the edge of the substrate 8 is divided by the average of the film forming speed (X+1.5 mm), and the value obtained by adding the values ​​of 16 points from the center to the edge, dividing by 16, and then multiplying by 100 (%) is displayed. This is the difference in film forming speed from the center to the edge of the substrate 8.

[0114] When the rectifying plate 222 of the second embodiment is installed in the chamber 12 for use, the difference in film forming speed from the center of the substrate 8 to the edge of the substrate 8 is calculated using Fig. 20 When the rectifying plate 322 of this modified example is installed in the chamber 12 and used, the difference in the film forming rate from the center of the substrate 8 to the edge of the substrate 8 is calculated using Fig. 22 Calculated from the data shown in FIG. 1 , the value is 31.1%. Therefore, it can be said that the number of the first through holes 252 is preferably the same in each zone Z1, Z2, and Z3. By making the number of the first through holes 252 the same in each zone Z1, Z2, and Z3 as in the rectifying plate 222 of the second embodiment, the difference in the film forming speed from the center of the substrate 8 to the edge of the substrate 8 can be reduced compared to the case of using the rectifying plate 322 described in this modification.

[0115] (Second Modification)

[0116] use Figure 24 to Figure 28 A second modification of the second embodiment will be described.

[0117] Fig.24 A schematic plan view of a rectifying plate 422 according to this modification is shown. Fig.24, the nozzle 24 is omitted from the illustration. The nozzle 24 is opposed to the first through hole 252 of the high flow path resistance area 232 having the nozzle opposing area opposed to the nozzle 24 in each zone Z1, Z2, and Z3. The diameter of the first through hole 252 of the rectifying plate 422 of this modification is 3 mm, which is smaller than the diameter of the first through hole 252 of the rectifying plate 222 of the second embodiment, that is, 5 mm. The diameter of the second through hole 254 of the rectifying plate 422 is 7 mm, which is the same as the rectifying plate 222 of the second embodiment. The constant spacing of the through holes 252 and 254 of the rectifying plate 422 is 8 mm, which is the same as the rectifying plate 222 of the second embodiment.

[0118] The flow of gas at a position 100 mm directly below the rectifying plate 422 in a state where the rectifying plate 422 of the present modification example is attached to an appropriate position in the chamber 12 is analyzed.

[0119] Fig.25 The schematic cross section of the cylindrical chamber 12 at a position 100 mm directly below the rectifying plate 422 in the chamber 12 between the rectifying plate 422 and the turntable 18 is shown. Fig.25 4 shows the simulation results obtained by capturing the upward (+Z direction) movement of gas at a position 100 mm directly below the rectifying plate 422 in the chamber 12. Fig.25 This is a contour map showing that when a film is formed on the substrate 8 with the rectifying plate 422 of this modification example installed at the reference position of the chamber 12, no upward gas flow is generated in the chamber 12 100 mm directly below the rectifying plate 422. Fig.25 The downward movement of gas is not shown. Fig.25 In the figure, the velocity distribution of the gas moving upward is expressed as the relative velocity when the minimum velocity is set to 1.0. Fig.25 As shown in FIG. 1 , the gas is not confirmed to move upward in the entire area of ​​the position in the chamber 12 of 100 mm directly below the rectifying plate 422. Although it depends on the flow rate of the gas from the nozzle 24, the flow rate of the purge gas, etc., it can be confirmed that under certain conditions, when the rectifying plate 422 of this modified example is installed in the chamber 12 for use, the gas does not rise in the area below the rectifying plate 422.

[0120] Here, for comparison with the rectifying plate 422 of the present modification, the flow of gas at a position 100 mm directly below the rectifying plate 222 in a state where the rectifying plate 222 of the second embodiment is attached to an appropriate position in the chamber 12 is analyzed.

[0121] Fig.26A schematic cross section of the cylindrical chamber 12 at a position 100 mm directly below the rectifying plate 222 in the chamber 12 between the rectifying plate 222 and the turntable 18 is shown. Fig.26 2 shows the simulation results obtained by capturing the upward (+Z direction) movement of gas at a position 100 mm directly below the rectifying plate 222 in the chamber 12. Fig.26 This is to Fig.15 The contour diagram shown is a diagram showing the rising flow of gas in the chamber 12 at 100 mm directly below the rectifying plate 222 when a film is formed on the substrate 8 with the rectifying plate 222 attached to the reference position of the chamber 12 .

[0122] exist Fig.26 The downward movement of gas is not shown. Fig.26 In the figure, the velocity distribution of the gas moving upward is expressed as the relative velocity when the minimum velocity is set to 1.0. Fig.26 As shown, it can be confirmed that the gas moves upward in an area of ​​21% of the entire area of ​​the position in the chamber 12 100 mm directly below the rectifying plate 222. Although it depends on the flow rate of the gas from the nozzle 24, the flow rate of the purge gas, etc., it can be confirmed that under certain conditions, when the rectifying plate 222 of the second embodiment is installed in the chamber 12 for use, the gas rises in the area in the chamber 12 below the rectifying plate 222.

[0123] In order to compare with the rectifying plate 422 of this modification and the rectifying plate 222 of the second embodiment, a comparative example is used. Fig. 27 The rectifying plate 522 is shown. Fig. 27 FIG. 5 is a schematic top view showing a flow rectifying plate 522 of a comparative example. Fig. 27 The nozzle 24 is omitted from the illustration. The nozzle 24 is opposed to the first through hole 552 of the high flow path resistance region 232 including the nozzle opposing region opposed to the nozzle 24 in each zone Z1, Z2, and Z3. Fig.24 The arrangement of the first through holes 252 of the rectifying plate 422 is the same as that of the second through holes 252 of the rectifying plate 522. Fig.24 The arrangement of the second through hole 254 of the rectifying plate 422 shown is the same. The diameter of the first through hole 552 and the diameter of the second through hole 254 of the rectifying plate 522 of the comparative example are 7 mm and the same. The constant pitch of the through holes 552, 254 of the rectifying plate 522 is the same as that of the rectifying plate 222 of the second embodiment, which is 8 mm.

[0124] In a state where the rectifying plate 522 of the comparative example was attached to an appropriate position in the chamber 12 , the flow of gas at a position 100 mm directly below the rectifying plate 522 was analyzed.

[0125] Fig.28 1 shows the simulation result of capturing the upward (+Z direction) movement of the gas at a position 100 mm directly below the rectifying plate 522 in the chamber 12. Fig.28 is to compare the Fig. 27 The contour diagram shows the rising flow of gas in the chamber 12 at 100 mm directly below the rectifying plate 522 when a film is formed on the substrate 8 with the rectifying plate 522 attached to the reference position of the chamber 12 .

[0126] exist Fig.28 The downward movement of gas is not shown. Fig.28 In the figure, the velocity distribution of the gas moving upward is expressed as the relative velocity when the minimum velocity is set to 1.0. Fig.28 As shown, it can be confirmed that the gas moves upward in an area of ​​31% of the entire area of ​​the position in the chamber 12 100 mm directly below the rectifying plate 522. Although it depends on the flow rate of the gas from the nozzle 24, the flow rate of the purge gas, etc., it can be confirmed that under certain conditions, when the rectifying plate 522 of the comparative example is installed in the chamber 12 for use, the gas rises in the area below the rectifying plate 522.

[0127] Therefore, it can be said that the larger the diameter of the first through hole 252 is (the larger the opening area is) relative to the second through hole 254, the easier it is for the gas to rise in the area below the rectifying plate, and the gas is stirred unintentionally in the chamber 12. Therefore, the diameter of the first through hole 252 of the rectifying plate 422 of this modification is preferably less than 5 mm. The diameter of the first through hole 252 is preferably within 0.7 times of the diameter of the second through hole 254, for example.

[0128] On the other hand, it is believed that by reducing the diameter of the first through hole 252, sufficient effects cannot be obtained from the viewpoint of suppressing gas agitation, backflow, and controlling airflow. Therefore, the first through hole 252 of the rectifying plate 422 of the modified example sets the diameter of the flow of gas in the chamber 12 to the minimum diameter (minimum opening area) so as to prevent the backflow of gas at a specified position in the chamber 12. At this time, the minimum diameter of the diameter of the first through hole 252 depends on the flow rate of the gas ejected from the nozzle 24, the purge gas, etc., but is set to prevent the backflow of gas. Alternatively, the minimum diameter (minimum opening area) may be set to suppress changes in the airflow caused by changes in the flow resistance due to the clogging of the first through hole 252 over time.

[0129] Therefore, by appropriately setting the diameter of the first through hole 252 of the rectifying plate 422 of this variation relative to the second through hole 254, when the rectifying plate 422 is installed in the chamber 12, the stirring and backflow of the gas can be suppressed in the chamber 12, and the film forming speed can be controlled according to the distance from the center of the substrate 8.

[0130] Thus, the relationship between the second through hole 254 and the first through hole 252 is preferably such that the hole diameter does not cause a backflow toward the lower surface of the rectifying plate 422 due to the gas flowing downward through the first through hole 252. For example, although it depends on various conditions such as the flow rate per unit time from the nozzle 24, when the gap between the rectifying plate 422 and the nozzle 24 is 2.5 mm, the first through hole 252 and the second through hole 254 of the rectifying plate 422 are arranged at a constant interval of 8 mm, the diameter of the second through hole 254 is 7 mm, and the diameter of the first through hole 252 is 3 mm, which is 0.7 times smaller than the diameter of the second through hole 254, when the gas is injected from the nozzle 24 and when the hydrogen gas is injected from the purge gas nozzle, the generation of the backflow of the gas in the chamber 12 is suppressed.

[0131] Even if the position of the rectifying plate 422 is offset relative to the chamber 12 , it is possible to suppress the deviation in the film forming speed distribution.

[0132] According to this variation, for example, a rectifying plate 422 capable of suppressing changes in the film forming speed of a film forming object before and after the rectifying plate 422 is replaced by maintenance, a fluid introduction device 14 having the rectifying plate 422, and a film forming device 10 having the fluid introduction device 14 can be provided.

[0133] According to at least one embodiment described above, for example, a rectifying plate capable of suppressing changes in the film forming speed of a film forming object before and after the rectifying plate is replaced by maintenance, a fluid introduction device having the rectifying plate, and a film forming device having the fluid introduction device can be provided.

[0134] Several embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the subject matter of the invention. These embodiments and their variations are included in the scope or subject matter of the invention, and are included in the invention described in the claims and the scope of their equivalents.

[0135] Description of Reference Numerals

[0136] 8…substrate, 10…film forming device, 12…chamber, 14…fluid introducing device, 16…exhaust portion, 18…rotating table, 22…rectifier plate, 24…nozzle, 26…cover, 28…space, 32…sealing portion, 34…through hole, 36…nozzle opposing region.

Claims

1. A rectifying plate, arranged opposite to a plurality of nozzles for spraying fluid, for rectifying the fluid, characterized in that: It has: a plurality of first through holes, each having a diameter smaller than that of the plurality of nozzles, for allowing fluid to pass through; A plurality of high flow path resistance regions having nozzle-opposing regions respectively opposed to the plurality of nozzles; and a low flow resistance area, which surrounds the multiple high flow resistance areas respectively to form a plurality of first through holes, so that the multiple high flow resistance areas are separated from each other, and the high flow resistance areas are closed, or one or more second through holes with a smaller opening area than the multiple first through holes are formed in the multiple high flow resistance areas, and the opening area density of the high flow resistance areas is smaller than the opening area density of the low flow resistance areas.

2. The rectifier plate according to claim 1, characterized in that: The fluid from each of the plurality of nozzles is directly sprayed onto the plurality of high flow path resistance areas.

3. The rectifier plate according to claim 1, characterized in that: The numbers of the second through holes in the plurality of high flow path resistance regions are the same.

4. The rectifier plate according to any one of claims 1 to 3, characterized in that: The plurality of first through holes are formed at a predetermined pitch in the rectifying plate.

5. The rectifier plate according to any one of claims 1 to 3, characterized in that: The rectifying plate is disk-shaped, and the plurality of first through holes are formed at positions that are point-symmetrical with respect to a center of the rectifying plate or at positions that are line-symmetrical with respect to a predetermined axis that passes through a center of the rectifying plate.

6. A fluid introduction device, characterized in that: The invention comprises: the flow straightening plate according to any one of claims 1 to 5; and a plurality of the nozzles arranged to face the plurality of nozzle facing regions of the flow straightening plate, respectively.

7. A film forming device, characterized in that: The invention comprises: the fluid introduction device according to claim 6; and a chamber into which the fluid flows from the fluid introduction device.

Images