Wafer alignment recognition device and method with high alignment accuracy

Abstract

The present invention provides a wafer alignment recognition device and method with high alignment accuracy. The device includes: a photosensitive distance measuring device for obtaining the wafer's warpage distribution value through the reception and feedback of optical signals; and a suction device disposed below the wafer. The suction device includes multiple suction units. The suction device determines the suction value or blowing value required for the wafer to be compensated based on the wafer's warpage distribution value. The suction unit applies suction or blowing force to the wafer from the bottom of the wafer to quantitatively compensate for the wafer's deformation, thereby aligning multiple alignment patterns on the wafer at the same level. The present invention connects corresponding vacuum vents to different areas of the lower chuck based on the wafer's warpage distribution. By controlling the suction or blowing values ​​of the vents in different areas, the wafer's warpage condition is mechanically altered, aligning multiple alignment patterns on the wafer at the same level. This significantly reduces lens alignment accuracy errors during the wafer exposure / bonding process, thereby improving the quality of the exposure / bonding process.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor equipment design, and in particular relates to a wafer alignment recognition device and method with high alignment accuracy. Background Art

[0002] Focus alignment technology plays a crucial role in MEMS and IC manufacturing, particularly in the photolithography and bonding processes. Accurate pattern recognition not only directly determines process precision but also plays a decisive role in subsequent process yields. Currently, most pattern recognition technologies scan pattern areas on semiconductor wafers to precisely determine their positions. Automatically focusing the lens captures a clear pattern, ensuring that the upper and lower patterns are aligned before the machine proceeds with the process.

[0003] In actual processing, semiconductor wafers experience significant warpage after lapping. During pattern recognition, the alignment patterns on the semiconductor wafer are not aligned horizontally. This can cause pattern blur or even alignment failure during focusing, directly impacting wafer alignment accuracy and, in extreme cases, even resulting in product scrap.

[0004] The typical solution is to control the quality of incoming semiconductor wafers in the pre-process, requiring that wafer warpage be kept within a certain range before pattern recognition alignment. However, this implicitly imposes a significant constraint on other processes, making many product structures impossible to construct and significantly increasing production costs. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a wafer alignment and identification device and method with high alignment accuracy, which is used to solve the problem in the prior art that the alignment accuracy of the wafer exposure process is seriously affected due to different warping of the incoming wafers.

[0006] To achieve the above-mentioned purpose and other related purposes, the present invention provides a wafer alignment and recognition device with high alignment accuracy, the alignment and recognition device comprising: a photosensitive ranging device, arranged above the wafer, for obtaining the warpage distribution value of the wafer by receiving and feeding back optical signals; an adsorption device, arranged below the wafer, the adsorption device comprising a plurality of adsorption units, the adsorption device determining the adsorption value or blowing value that needs to be compensated for the wafer according to the warpage distribution value of the wafer, applying suction or blowing force to the wafer from the bottom of the wafer to quantitatively compensate for the deformation of the wafer, so that the multiple alignment patterns of the wafer are at the same horizontal height.

[0007] Optionally, the photosensitive ranging device is used to obtain the deformation amount that needs to be changed in each area of ​​the wafer based on the warpage distribution value of the wafer; the adsorption device controls the suction or blowing force of the corresponding area based on the deformation amount that needs to be changed, so as to quantitatively compensate for the deformation amount of the wafer so that multiple alignment patterns of the wafer are at the same horizontal height.

[0008] Optionally, the suction force is obtained by the following formula:

[0009] F1=k△x+A;

[0010] Where F1 is the suction force, k is the elastic constant of the wafer, and A is a fixed constant;

[0011] The blowing force is obtained by the following formula:

[0012] F2=k△x+B;

[0013] Among them, F2 is the blowing force, k is the elastic constant of the wafer, and B is a fixed constant.

[0014] Optionally, the adsorption device includes a vacuum suction cup, and the surface of the vacuum suction cup has multiple air holes. The suction force or blowing force of the air holes is adjusted by setting the air pressure of the vacuum suction cup and the aperture of the air holes, wherein the magnitude of the suction force is negatively correlated with the air pressure and negatively correlated with the aperture of the air holes, and the magnitude of the blowing force is positively correlated with the air pressure and negatively correlated with the aperture of the air holes.

[0015] Optionally, the vacuum suction cup includes a plurality of vacuum cavities, each vacuum cavity is correspondingly provided with one or more air holes, and the air pressure in each vacuum cavity is independently adjustable to control the suction force or blowing force of the corresponding area.

[0016] Optionally, the shape of the air hole includes one of a circular hole, an arc-shaped hole and an annular hole.

[0017] Optionally, the alignment and identification device further includes a pressure plate component, which is arranged above the wafer and is used to apply pressure to the wafer before the adsorption device works so that the wafer adheres to the adsorption device, and to remove the pressure after the adsorption device starts working.

[0018] The present invention also provides a wafer alignment and recognition method, which comprises: providing a wafer alignment and recognition device with high alignment accuracy as described above; obtaining a warpage distribution value of the wafer by receiving and feeding back an optical signal based on a photosensitive ranging device; obtaining a deformation amount that needs to be changed in each area of ​​the wafer based on the warpage distribution value; applying suction or blowing force from the bottom of the wafer to the wafer based on the suction value or blowing value that needs to be compensated for the wafer, so as to quantitatively compensate for the deformation amount of the wafer, so that multiple alignment patterns of the wafer are at the same horizontal height; performing focusing alignment based on the alignment pattern; and performing an exposure process or a bonding process on the wafer.

[0019] Optionally, the adsorption device includes multiple vacuum cavities, each vacuum cavity contains one or more air holes, and the air pressure in each vacuum cavity is independently adjustable, and the suction or blowing force of the air hole is adjusted by setting the air pressure of the vacuum cavity and the aperture of the air hole.

[0020] Optionally, before the adsorption device starts working, pressure is applied to the wafer by a pressure plate component so that the wafer adheres to the adsorption device, and the pressure is removed after the adsorption device starts working.

[0021] As described above, the wafer alignment recognition device and method with high alignment accuracy of the present invention have the following beneficial effects:

[0022] The present invention connects corresponding vacuum air holes to different areas of the lower chuck according to the warpage distribution of the wafer. By controlling the adsorption value or blowing value of the air holes in different areas, the warpage condition of the wafer is mechanically changed, so that multiple alignment patterns of the wafer are at the same horizontal height, so that during the wafer exposure / bonding process, the lens alignment accuracy error is greatly reduced, thereby improving the exposure / bonding process quality.

[0023] The present invention can install a photosensitive distance measuring device inside the exposure / bonding machine, or it can be installed externally. By importing data into the exposure / bonding machine, the warpage distribution of the wafer can be simulated and calculated. At the same time, different air holes are connected to different areas of the lower chuck. The adsorption value or blowing value can be changed accordingly during the exposure / bonding process inside the machine. It has good compatibility with the exposure / bonding machine and has good practical application value.

[0024] The device and method of the present invention can completely solve the problem of wafer warping during the exposure / bonding alignment process, improve the accuracy of the graphics, and effectively reduce production costs and process complexity. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 and Figure 2Shown is a schematic diagram of the principle of obtaining wafer warpage distribution values ​​by a wafer alignment and recognition device with high alignment accuracy according to an embodiment of the present invention.

[0026] Figure 3 Shown is a structural schematic diagram of a wafer alignment and recognition device with high alignment accuracy according to an embodiment of the present invention.

[0027] Figure 4 Shown is a structural schematic diagram of an adsorption device of a wafer alignment and recognition device with high alignment accuracy according to another embodiment of the present invention.

[0028] Figure 5 It is a schematic diagram showing the principle of performing alignment recognition under wafer warpage according to an embodiment of the present invention.

[0029] Figures 6 and 7 Shown is a structural schematic diagram of each step of the alignment recognition method according to an embodiment of the present invention.

[0030] Component number description

[0031] 101 Photosensitive ranging device

[0032] 102 adsorption device

[0033] 103 wafers

[0034] 1031, 1032 alignment graphics

[0035] 104 Focusing Lens

[0036] 105 pores

[0037] 1051 Round Hole

[0038] 1052 circular hole array

[0039] 1053 Arc Hole DETAILED DESCRIPTION

[0040] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0041] For example, when describing the embodiments of the present invention, cross-sectional views of device structures may be partially enlarged to scale for ease of explanation. Furthermore, these schematic views are merely illustrative and should not limit the scope of the present invention. Furthermore, in actual manufacturing, three-dimensional dimensions, including length, width, and depth, should be included.

[0042] For convenience, spatially relative terms such as "under," "below," "below," "below," "above," and "on" may be used herein to describe the relationship of one element or feature to other elements or features shown in the drawings. It will be understood that these spatially relative terms are intended to encompass orientations of the device in use or operation in addition to the orientation depicted in the drawings. Additionally, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0043] In the context of the present application, a structure described as a first feature being "above" a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where an additional feature is formed between the first and second features, such that the first and second features may not be in direct contact.

[0044] It should be noted that the illustrations provided in this embodiment are only used to schematically illustrate the basic concept of the present invention. Therefore, the illustrations only show components related to the present invention and are not drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed at will, and the component layout type may also be more complicated.

[0045] Traditional pattern alignment uses a lens that focuses up and down to eliminate the problem of patterns on the semiconductor wafer not being on the same horizontal plane, but this affects image clarity and, consequently, precision. The key to this invention is to capture the warpage distribution of the semiconductor wafer and provide feedback to the exposure / bonding machine. Based on a model, the exposure / bonding machine determines whether the force applied to the semiconductor wafer by the small holes in the local area of ​​the suction plate is pulling (suction) or pushing (blowing), ensuring that the left and right patterns remain on the same horizontal line.

[0046] The present invention quantitatively modifies the semiconductor wafer adsorption plate of the exposure / bonding machine, giving it partial adsorption and blowing functions. The gas adsorption value or blowing value is calculated according to the warpage value of the semiconductor wafer. Through a single-chip microcomputer or a program written into the machine itself, the warpage value of the semiconductor wafer pattern area is quantitatively changed during the alignment process, ultimately solving the problem of improving exposure alignment accuracy.

[0047] like Figures 1 to 4 As shown, this embodiment provides a wafer alignment and recognition device with high alignment accuracy. The alignment and recognition device can be used in a wafer exposure machine, a wafer bonding machine, or other equipment requiring alignment and recognition. Wafer 103 can be a silicon wafer, a glass wafer, or an SOI wafer. These wafers can have various semiconductor thin films and processed patterns thereon, and can also include a bonded wafer formed by bonding the above wafers. The alignment and recognition device includes: a photosensitive distance measuring device 101 and an adsorption device 102.

[0048] The photosensitive distance measuring device 101 can be set inside the alignment and recognition equipment to directly feed back data to the exposure equipment, or be set outside the alignment and recognition equipment to import data into the exposure / bonding machine. The photosensitive distance measuring device 101 is used to determine the distance distribution between the top surface of the wafer 103 and the photosensitive distance measuring device 101 by receiving and feeding back optical signals, thereby obtaining the warpage distribution value of the wafer 103.

[0049] For example, the photosensitive ranging device 101 includes a photosensitive ranging chuck, which emits light to the wafer 103 below and then reflects it from the wafer 103. When the wafer 103 warps, there are differences in the reflected light signals at different positions. The photosensitive ranging chuck determines the distance distribution between the top surface of the wafer 103 and the photosensitive ranging chuck based on the difference, thereby obtaining the warpage distribution value of the wafer 103, such as Figure 3 Of course, the photosensitive distance measuring device 101 may also be other devices suitable for obtaining the warpage distribution value of the wafer 103, and is not limited to the examples listed here.

[0050] During the application process, if the photosensitive ranging chuck needs to be set inside the exposure / bonding equipment, such as Figure 2 As shown, the photosensitive distance measuring chuck only needs to be fixed to the upper part of the alignment and recognition device through detachable connecting parts such as screws. It can be connected to the power supply line of the alignment and recognition device for power supply, or it can be powered by its own battery. It can be connected to the adsorption device 102 in a wired or wireless manner to achieve signal connection between it and the adsorption device 102. If the photosensitive distance measuring chuck is set outside the exposure / bonding device, such as Figure 1 As shown, it is sufficient to connect it to the exposure / bonding machine via a data line or wireless device to achieve signal connection.

[0051] Furthermore, in this embodiment, the photosensitive distance measuring device 101 is also used to obtain the deformation amount that needs to be changed in each area of ​​the wafer 103 according to the warpage distribution value of the wafer 103.

[0052] like Figures 1 to 4 As shown, the adsorption device 102 is arranged below the wafer 103, and the adsorption device 102 includes a plurality of adsorption units. The adsorption device 102 determines the adsorption value or blowing value that needs to be compensated for the wafer 103 according to the warping distribution value of the wafer 103, and applies suction or blowing force to the wafer 103 from the bottom of the wafer 103 to quantitatively compensate for the deformation of the wafer 103, so that the multiple alignment patterns 1031, 1032 of the wafer 103 are at the same horizontal height.

[0053] In this embodiment, the adsorption device 102 controls the suction or blowing force of the corresponding area based on the deformation amount that needs to be changed to quantitatively compensate for the deformation amount of the wafer 103 so that the multiple alignment patterns 1031, 1032 of the wafer 103 are at the same horizontal height.

[0054] In this embodiment, the suction force is obtained by the following formula:

[0055] F1=kΔx+A, where F1 is the suction force, k is the elastic constant of the wafer 103, and A is a fixed constant;

[0056] The blowing force is obtained by the following formula:

[0057] F2=kΔx+B, where F2 is the blowing force, k is the elastic constant of the wafer 103, and B is a fixed constant.

[0058] For wafers 103 with the same process, the strain in the vertical direction approximately satisfies a linear relationship. The corresponding exposure equipment production program is written into the exposure equipment production program, which can make targeted compensation for the different warping of the incoming wafer 103, so that the multiple alignment patterns 1031, 1032 on it are at the same horizontal height, thereby improving the alignment accuracy.

[0059] like Figure 3 and Figure 4 As shown, the adsorption device 102 includes a vacuum suction cup, and the surface of the vacuum suction cup has a plurality of air holes 105. The suction force of the air holes 105 can be adjusted by setting the air pressure of the vacuum suction cup and the aperture of the air holes 105 (such as Figure 3 The arrow points away from the wafer hole) or blowing force (such as Figure 3 The arrow is directed toward the pores of the wafer), wherein the magnitude of the suction force is negatively correlated with the air pressure and negatively correlated with the aperture of the pore 105, and the magnitude of the blowing force is positively correlated with the air pressure and negatively correlated with the aperture of the pore 105. It should be noted that the suction force represents the force from the wafer toward the adsorption device, and the blowing force represents the force from the wafer back to the adsorption device. For example, a focal plane can be set first, and then the suction force or blowing force can be used, specifically when the upper surface of the wafer is above the focal plane, suction is used, and when the upper surface of the wafer is below the focal plane, blowing force is used, so that the upper surface of the wafer is finally brought close to or overlapped with the focal plane.

[0060] In order to further adapt to the warping distribution of the wafer 103 in different areas, in this embodiment, the vacuum suction cup includes a plurality of vacuum cavities, each vacuum cavity is correspondingly provided with one or more air holes 105, and the air pressure in each vacuum cavity is independently adjustable to control the suction or blowing force of the corresponding area. In this example, different adsorption strengths or blowing strengths are given to the wafer 103 in different areas, and the warping value of the wafer 103 is quantitatively changed so that the multiple alignment patterns 1031, 1032 of the wafer 103 are at the same horizontal height. For the exposure process, the multiple alignment patterns 1031, 1032 of the wafer 103 are at the same horizontal height, which can improve the exposure accuracy of the wafer 103; and for the bonding process, since the top semiconductor wafer has no process flow, it can be regarded as a horizontal semiconductor wafer. The bottom semiconductor wafer uses the above method to collect the warpage value and then quantitatively change the warpage distribution so that the left and right identification patterns are on the same horizontal line, improving the accuracy of the recognition of the alignment patterns 1031 and 1032, and finally performing the bonding process.

[0061] The shape of the air hole 105 includes a circular hole, an arc hole and a ring hole, such as Figure 4 As shown, of course, the shape of the air holes 105 can also be rectangular, triangular, rhombus, elliptical, etc., and is not limited to the examples listed here. In this embodiment, the air holes 105 located inside the adsorption device 102 are dispersed circular holes 1051, the air holes 105 located in the middle of the adsorption device 102 are annular holes or an array of circular holes arranged in an annular manner 1052, and the air holes 105 located at the edge of the adsorption device 102 are arc holes 1053. Furthermore, the circular holes inside the adsorption device 102, the annular holes in the middle or the array of circular holes arranged in an annular manner, and the arc holes at the edge are all provided with independent vacuum chambers, so that the suction force of the air holes 105 in each area can be independently adjusted. This configuration is more widely applicable to improving the warpage of the wafer 103 and can cope with deformation compensation for most warpages of the wafer 103. Therefore, in most cases, deformation compensation for warpage of the wafer 103 can be achieved without replacing the adsorption device 102, which can effectively save costs.

[0062] In this embodiment, the alignment and identification device also includes a pressure plate component, which is arranged above the wafer 103, and is used to apply pressure to the wafer 103 before the adsorption device 102 works, so that the wafer 103 is attached to the adsorption device 102, and remove the pressure after the adsorption device 102 starts working.

[0063] In this embodiment, the alignment recognition device also includes a focusing lens 104. After quantitatively compensating the deformation of the wafer 103 so that the multiple alignment patterns 1031 and 1032 of the wafer 103 are at the same horizontal height, the focusing lens 104 focuses on the wafer 103 to determine the focusing plane of the focusing lens 104.

[0064] like Figure 5 As shown, when the wafer 103 is warped, during the pattern recognition process, the alignment patterns 1031 and 1032 on the semiconductor wafer 103 are not on the same horizontal plane. This causes pattern blur or even alignment failure during the focusing process, which directly affects the accuracy of the semiconductor wafer 103 during the alignment process. In extreme cases, it may even cause the product to be scrapped.

[0065] In order to solve the above problems, Figures 1 to 7 As shown, this embodiment also provides a wafer alignment recognition method, comprising the following steps:

[0066] Step 1) providing a wafer alignment and recognition device with high alignment accuracy as described in any one of the above items;

[0067] Step 2) Based on the photosensitive ranging device 101, the warpage distribution value of the wafer 103 is obtained by receiving and feeding back the optical signal, such as Figure 1 or Figure 2 shown.

[0068] Step 3) obtaining the deformation amount that needs to be changed in each area of ​​the wafer 103 based on the warpage distribution value;

[0069] Step 4), the adsorption device 102 applies suction or blowing force from the bottom of the wafer 103 to the wafer 103 according to the adsorption value or blowing value that needs to be compensated for the wafer 103, so as to quantitatively compensate for the deformation of the wafer 103, so that the multiple alignment patterns 1031, 1032 of the wafer 103 are at the same level, as shown in FIG. Figure 6 As shown;

[0070] Step 5), the focusing lens 104 of the alignment recognition device performs focusing alignment based on the alignment patterns 1031, 1032, such as Figure 7 As shown;

[0071] Step 6): performing an exposure process or a bonding process on the wafer 103 .

[0072] For example, the adsorption device 102 includes multiple vacuum cavities, each vacuum cavity contains one or more air holes 105, and the air pressure in each vacuum cavity is independently adjustable. The suction force or blowing force of the air hole 105 is adjusted by setting the air pressure of the vacuum cavity and the aperture of the air hole 105.

[0073] In this embodiment, the bonding method further includes the steps of applying pressure to the wafer 103 by a pressure plate component before the adsorption device 102 works so that the wafer 103 adheres to the adsorption device 102 , and removing the pressure after the adsorption device 102 starts working.

[0074] As described above, the wafer alignment recognition device and method with high alignment accuracy of the present invention have the following beneficial effects:

[0075] According to the warpage distribution of the wafer, the present invention connects corresponding vacuum air holes 105 to different areas of the lower chuck, and mechanically changes the warpage condition of the wafer by controlling the adsorption value or blowing value of the air holes 105 in different areas, so that the multiple alignment patterns 1031 and 1032 of the wafer are at the same horizontal height, so that during the wafer exposure / bonding process, the lens alignment accuracy error is greatly reduced, thereby improving the exposure / bonding process quality.

[0076] The present invention can install a photosensitive distance measuring device 101 inside the exposure / bonding machine, or can place the photosensitive distance measuring device 101 externally. By importing data into the exposure / bonding machine, the warpage distribution of the wafer can be simulated and calculated. At the same time, different air holes 105 are connected to different areas of the lower chuck. The adsorption value or blowing value can be changed accordingly during the exposure / bonding process inside the machine. The invention has good compatibility with the exposure / bonding machine and has good practical application value.

[0077] The device and method of the present invention can completely solve the problem of wafer warping during the exposure / bonding alignment process, improve the accuracy of the graphics, and effectively reduce production costs and process complexity.

[0078] Therefore, the present invention effectively overcomes various shortcomings of the prior art and has high industrial utilization value.

[0079] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A wafer alignment and recognition device with high alignment accuracy, characterized in that: The alignment recognition device comprises: A photosensitive distance measuring device is used to determine the distance distribution between the top surface of the wafer and the photosensitive distance measuring device by receiving and feeding back optical signals, so as to obtain a warpage distribution value of the wafer, and obtain the deformation amount required to be changed in each area of ​​the wafer based on the warpage distribution value of the wafer; A suction device is provided below the wafer, the suction device comprising a vacuum suction cup having a plurality of air holes on its surface, the vacuum suction cup further comprising a plurality of vacuum cavities, each vacuum cavity correspondingly provided with one or more air holes, and the air pressure in each vacuum cavity being independently adjustable. The suction device controls the suction or blowing force of the corresponding area by adjusting the air pressure in the vacuum cavity corresponding to each area based on the deformation amount to be changed in each area of ​​the wafer, so as to quantitatively compensate for the deformation amount of each area of ​​the wafer, so that the multiple alignment patterns of the wafer are at the same horizontal height; The suction force is obtained by the following formula: F1=k△x+A; Where F1 is the suction force, k is the elastic constant of the wafer, and A is a fixed constant; The blowing force is obtained by the following formula: F2=k△x+B; Among them, F2 is the blowing force, k is the elastic constant of the wafer, and B is a fixed constant.

2. The wafer alignment and recognition device with high alignment accuracy according to claim 1, characterized in that: The suction force or blowing force of the pores is adjusted by setting the aperture of the pores, wherein the magnitude of the suction force is negatively correlated with the air pressure and negatively correlated with the aperture of the pores, and the magnitude of the blowing force is positively correlated with the air pressure and negatively correlated with the aperture of the pores.

3. The wafer alignment and recognition device with high alignment accuracy according to claim 2, characterized in that: The shape of the air hole includes one of a circular hole, an arc hole and an annular hole.

4. The wafer alignment and recognition device with high alignment accuracy according to claim 1, characterized in that: The alignment and identification device also includes a pressure plate component, which is arranged above the wafer and is used to apply pressure to the wafer before the adsorption device works so that the wafer adheres to the adsorption device, and remove the pressure after the adsorption device starts working.

5. A wafer alignment recognition method, characterized in that: The wafer alignment recognition method: Provide a wafer alignment and recognition device with high alignment accuracy as claimed in any one of claims 1 to 4; Based on a photosensitive ranging device, the warpage distribution value of the wafer is obtained by receiving and feeding back an optical signal; Obtaining the deformation amount required to be changed in each area of ​​the wafer according to the warpage distribution value; The adsorption device applies suction or blowing force from the bottom of the wafer to the wafer according to the adsorption value or blowing value that needs to be compensated for the wafer, so as to quantitatively compensate for the deformation of the wafer so that the multiple alignment patterns of the wafer are at the same level; Performing focus alignment based on the alignment pattern; An exposure process or a bonding process is performed on the wafer.

6. The wafer alignment and recognition method according to claim 5, wherein: The suction force or blowing force of the air holes is adjusted by setting the aperture of the air holes.

7. The wafer alignment and recognition method according to claim 5, wherein: The method further includes the following steps: before the adsorption device starts working, applying pressure to the wafer through a pressure plate component to make the wafer adhere to the adsorption device, and removing the pressure after the adsorption device starts working.

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