Manufacturing method of flexible OLED display panel and flexible OLED display panel

Abstract

The embodiment of the present application provides a method for manufacturing a flexible OLED display panel and a flexible OLED display panel. The method for manufacturing a flexible OLED display panel includes: providing a carrier substrate, arranging a flexible substrate on the carrier substrate, the flexible substrate includes a peeling layer and a first flexible film layer stacked in sequence, a first groove is provided on the peeling layer, and the first flexible film layer fills the first groove to form a first convex structure; arranging a TFT layer on the side of the flexible substrate away from the carrier substrate; arranging an OLED layer on the side of the TFT layer away from the flexible substrate; removing the carrier substrate to obtain a flexible OLED display panel. The flexible OLED display panel obtained in the embodiment of the present application has good bending resistance, can effectively reduce the damage caused by bending to TFT and OLED devices, and improve product performance.

Description

Technical Field

[0001] The present application relates to the field of display, and in particular to a method for manufacturing a flexible OLED display panel and a flexible OLED display panel. Background Art

[0002] Organic Light-Emitting Diodes (OLED) are self-luminous devices that have the advantages of being lightweight, low power consumption, fast response, high luminous efficiency, and flexible display. They have become one of the most widely used display devices in recent years. Among them, flexible OLED display panels have become the mainstream product in the current display field.

[0003] However, existing flexible OLED display panels have the problem of excessive stress that cannot be released when bent, which can easily cause damage to the TFT and OLED devices inside the panel, thereby causing a decline in product performance. Summary of the invention

[0004] The embodiments of the present application provide a method for manufacturing a flexible OLED display panel and a flexible OLED display panel. The manufactured flexible OLED display panel has good bending resistance, can effectively reduce the damage caused by bending to TFT and OLED devices, and improve product performance.

[0005] In a first aspect, an embodiment of the present application provides a method for manufacturing a flexible OLED display panel, comprising:

[0006] Providing a carrier substrate, on which a flexible substrate is arranged, wherein the flexible substrate comprises a peeling layer and a first flexible film layer which are stacked in sequence, wherein a first groove is arranged on the peeling layer, and a portion of the first flexible film layer filled in the first groove forms a first protruding structure;

[0007] Disposing a TFT layer on a side of the flexible substrate away from the carrier substrate;

[0008] Disposing an OLED layer on a side of the TFT layer away from the flexible substrate;

[0009] The carrier substrate is removed to obtain a flexible OLED display panel.

[0010] In some embodiments, the flexible substrate further comprises a first barrier layer, an adhesive layer, a second flexible film layer and a second barrier layer, wherein the first barrier layer is arranged on a side of the first flexible film layer away from the peeling layer, the adhesive layer is arranged on a side of the first barrier layer away from the first flexible film layer, the second flexible film layer is arranged on a side of the adhesive layer away from the first barrier layer, and the second barrier layer is arranged on a side of the second flexible film layer away from the adhesive layer;

[0011] Wherein, a first through hole is provided on the adhesive layer, and a portion of the second flexible film layer filled in the first through hole forms a second protruding structure.

[0012] In some embodiments, the step of providing a TFT layer on a side of the flexible substrate away from the carrier substrate comprises: providing a buffer layer, an active layer, a gate insulating layer, a gate, an interlayer dielectric layer, a source-drain electrode layer, a passivation layer, and a planarization layer in sequence on a side of the flexible substrate away from the carrier substrate;

[0013] Wherein, a recessed structure is provided on the buffer layer, the interlayer dielectric layer and the passivation layer, and the recessed structure includes a second through hole provided on the passivation layer, a third through hole provided on the interlayer dielectric layer and a second groove provided on the buffer layer, and the second through hole, the third through hole and the second groove are provided correspondingly;

[0014] The material of the planar layer is an organic material, and the portion of the planar layer filled in the concave structure forms a third convex structure.

[0015] In some embodiments, the material of the lift-off layer includes a-Si.

[0016] In some embodiments, removing the carrier substrate includes: irradiating the peeling layer with laser from a side of the carrier substrate away from the peeling layer to weaken the adhesion between the peeling layer and the carrier substrate, and then peeling the carrier substrate off the peeling layer.

[0017] In a second aspect, an embodiment of the present application provides a flexible OLED display panel, including:

[0018] Flexible substrate;

[0019] A TFT layer, disposed on one side of the flexible substrate;

[0020] An OLED layer, disposed on a side of the TFT layer away from the flexible substrate;

[0021] The flexible substrate includes a peeling layer and a first flexible film layer disposed on the peeling layer facing the TFT layer. The peeling layer is provided with a first groove. The first flexible film layer fills the first groove to form a first protruding structure.

[0022] In some embodiments, the material of the lift-off layer includes a-Si.

[0023] In some embodiments, the flexible substrate further comprises a first barrier layer, an adhesive layer, a second flexible film layer and a second barrier layer, wherein the first barrier layer is arranged on a side of the first flexible film layer away from the peeling layer, the adhesive layer is arranged on a side of the first barrier layer away from the first flexible film layer, the second flexible film layer is arranged on a side of the adhesive layer away from the first barrier layer, and the second barrier layer is arranged on a side of the second flexible film layer away from the adhesive layer;

[0024] Wherein, a first through hole is provided on the adhesive layer, and a portion of the second flexible film layer filled in the first through hole forms a second protruding structure.

[0025] In some embodiments, the material of the bonding layer includes a-Si.

[0026] In some embodiments, the TFT layer includes a buffer layer, an active layer, a gate insulating layer, a gate, an interlayer dielectric layer, a source and drain electrode layer, a passivation layer, and a planarization layer which are stacked in sequence;

[0027] Wherein, a recessed structure is provided on the buffer layer, the interlayer dielectric layer and the passivation layer, and the recessed structure includes a second through hole provided on the passivation layer, a third through hole provided on the interlayer dielectric layer and a second groove provided on the buffer layer, and the second through hole, the third through hole and the second groove are provided correspondingly;

[0028] The material of the planar layer is an organic material, and the portion of the planar layer filled in the concave structure forms a third convex structure.

[0029] The manufacturing method of the flexible OLED display panel provided in the embodiment of the present application, by setting a first groove on the peeling layer, a partial area of ​​the first flexible film layer is filled in the first groove to form a first convex structure. When the manufactured flexible OLED display panel is bent, the first convex structure can release the bending stress, thereby greatly improving the bending resistance of the flexible OLED display panel, effectively reducing the damage caused by bending to TFT and OLED devices, and improving product performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative work.

[0031] Figure 1 A flowchart of a method for manufacturing a flexible OLED display panel provided in an embodiment of the present application.

[0032] Figure 2 A schematic diagram of disposing a flexible substrate on a carrier substrate provided in an embodiment of the present application.

[0033] Figure 3 A schematic diagram of providing a TFT layer on a side of a flexible substrate away from a carrier substrate provided in an embodiment of the present application.

[0034] Figure 4 A schematic diagram of disposing an OLED layer on a side of the TFT layer away from a flexible substrate provided in an embodiment of the present application.

[0035] Figure 5 This is a schematic diagram of removing the carrier substrate provided in an embodiment of the present application and a structural schematic diagram of the flexible OLED display panel provided in an embodiment of the present application. DETAILED DESCRIPTION

[0036] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0037] See also Figure 1 , Figure 1 A flowchart of a method for manufacturing a flexible OLED display panel provided in an embodiment of the present application. An embodiment of the present application provides a method for manufacturing a flexible OLED display panel, comprising:

[0038] S100, see Figure 2 A carrier substrate 10 is provided, and a flexible substrate 20 is arranged on the carrier substrate 10. The flexible substrate 20 includes a peeling layer 21 and a first flexible film layer 22 which are stacked in sequence. A first groove 211 is provided on the peeling layer 21, and a portion of the first flexible film layer 22 filled in the first groove 211 forms a first protruding structure.

[0039] It is understandable that the role of the peeling layer 21 is to peel the carrier substrate 10 off the peeling layer 21 by reducing the adhesion between the peeling layer 21 and the carrier substrate 10 after the subsequent preparation of the flexible OLED display panel 100 is completed.

[0040] It should be noted that the first groove 211 does not penetrate the bottom of the peeling layer 21 and is a structure similar to a blind hole. In the embodiment of the present application, the first groove 211 is set on the peeling layer 21, so that a part of the area of ​​the first flexible film layer 22 is filled in the first groove 211 to form a first convex structure. When the flexible OLED display panel 100 is bent, the first convex structure can release the bending stress, thereby greatly improving the bending resistance of the flexible OLED display panel 100, effectively reducing the damage to TFT and OLED devices caused by bending, and improving product performance.

[0041] In addition, since the first groove 211 is provided on the peeling layer 21, the roughness of the surface of the peeling layer 21 can be increased, it is beneficial to coat the flexible material (such as PI) when preparing the first flexible film layer 22, and the bonding effect between the peeling layer 21 and the first flexible film layer 22 can be improved.

[0042] Exemplarily, the carrier substrate 10 may be a rigid substrate, such as a glass substrate.

[0043] Exemplarily, the material of the peeling layer 21 includes a-Si, and the thickness of the peeling layer 21 can be The first groove 211 on the peeling layer 21 can be prepared by using a photomask through yellow light and dry etching processes.

[0044] Exemplarily, the material of the first flexible film layer 22 is polyimide (PI), and the thickness of the first flexible film layer 22 may be 10 μm.

[0045] Exemplarily, the flexible substrate 20 further includes a first barrier layer 23, an adhesive layer 24, a second flexible film layer 25, and a second barrier layer 26, wherein the first barrier layer 23 is disposed on a side of the first flexible film layer 22 away from the peeling layer 21, the adhesive layer 24 is disposed on a side of the first barrier layer 23 away from the first flexible film layer 22, the second flexible film layer 25 is disposed on a side of the adhesive layer 24 away from the first barrier layer 23, and the second barrier layer 26 is disposed on a side of the second flexible film layer 25 away from the adhesive layer 24;

[0046] The adhesive layer 24 is provided with a first through hole 241 , and the portion of the second flexible film layer 25 filled in the first through hole 241 forms a second protruding structure.

[0047] It is understandable that the function of the first barrier layer 23 is to block water and oxygen, so as to prevent water vapor and oxygen in the external environment from corroding the TFT device and the OLED device. Exemplarily, the material of the first barrier layer 23 includes one or more of silicon oxide (SiO2), silicon nitride (Si3N4) and silicon oxynitride (SiON). It should be noted that in the embodiments of the present application, multiple refers to two or more (for example, three).

[0048] It should be noted that the adhesive layer 24 can enhance the adhesion between the second flexible film layer 25 and the first barrier layer 23. Exemplarily, the material of the adhesive layer 24 may include a-Si, the thickness of the adhesive layer 24 may be 15A, and the first through hole 241 on the adhesive layer 24 may be prepared by using a mask through yellow light and dry etching process.

[0049] Exemplarily, the material of the second flexible film layer 25 is polyimide (PI), and the thickness of the first flexible film layer 22 may be 6 μm.

[0050] It is understandable that the function of the second barrier layer 26 is to further block water and oxygen on the basis of the first barrier layer 23, so as to prevent water vapor and oxygen in the external environment from corroding the TFT device and the OLED device. Exemplarily, the material of the second barrier layer 26 includes one or more of silicon oxide (SiO2), silicon nitride (Si3N4) and silicon oxynitride (SiON).

[0051] It should be noted that, in the embodiment of the present application, a first through hole 241 is set on the adhesive layer 24, so that a partial area of ​​the second flexible film layer 25 is filled in the first through hole 241 to form a second protruding structure. The second protruding structure can further release the bending stress and improve the bending resistance of the flexible OLED display panel 100.

[0052] In addition, since the first through hole 241 is provided on the adhesive layer 24, the roughness of the surface of the adhesive layer 24 can be increased, it is convenient to coat the flexible material (such as PI) when preparing the second flexible film layer 25, thereby improving the bonding effect between the adhesive layer 24 and the second flexible film layer 25.

[0053] S200, see Figure 3 A TFT layer 30 is disposed on a side of the flexible substrate 20 away from the carrier substrate 10 .

[0054] Exemplarily, “arranging the TFT layer 30 on the side of the flexible substrate 20 away from the carrier substrate 10” may specifically include: sequentially arranging a buffer layer 32, an active layer 33, a gate insulating layer 34, a gate 35, an interlayer dielectric layer 36, a source-drain electrode layer 37, a passivation layer 38 and a planarization layer 391 on the side of the flexible substrate 20 away from the carrier substrate 10;

[0055] The buffer layer 32, the interlayer dielectric layer 36 and the passivation layer 38 are provided with a recessed structure 395, the recessed structure 395 includes a second through hole provided on the passivation layer 38, a third through hole provided on the interlayer dielectric layer 36 and a second groove provided on the buffer layer 32, and the second through hole, the third through hole and the second groove are provided correspondingly;

[0056] The material of the planar layer 391 is an organic material, and the portion of the planar layer 391 filling the recessed structure 395 forms a third protruding structure.

[0057] It can be understood that the second groove does not penetrate the bottom of the buffer layer 32 and has a structure similar to a blind hole.

[0058] It should be noted that, in the embodiment of the present application, a recessed structure 395 is set on the buffer layer 32, the interlayer dielectric layer 36 and the passivation layer 38, so that a partial area of ​​the flat layer 391 is filled in the recessed structure 395 to form a third protruding structure. The third protruding structure can further release the bending stress and improve the bending resistance of the flexible OLED display panel 100.

[0059] For example, the buffer layer 32 may be a silicon nitride (Si3N4) layer, a silicon oxide (SiO2) layer, or a silicon oxynitride (SiON) layer, or may be a stack of two or more of the silicon nitride (Si3N4) layer, the silicon oxide (SiO2) layer, and the silicon oxynitride (SiON) layer; the thickness of the buffer layer 32 may be

[0060] Exemplarily, the material of the active layer 33 may be an oxide semiconductor, such as indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), indium gallium zinc tin oxide (IGZTO), etc., and the thickness of the active layer 33 may be

[0061] For example, the gate insulating layer 34 may be a silicon oxide (SiO2) film, and the thickness of the gate insulating layer 34 may be

[0062] For example, the gate 35 may be a single layer of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., or may be a Mo / Al / Mo stacked structure, an Al / Mo stacked structure, a Mo / Cu stacked structure, or a MoTi / Cu stacked structure (MoTi is a molybdenum-titanium alloy). The thickness of the gate 35 may be

[0063] Exemplarily, the preparation method of the gate 35 and the gate insulating layer 34 can be: first deposit a gate metal layer and a gate insulating layer 34, use a wet etching method to first form a pattern of the gate 35, and then use the gate 35 as a blocking layer to form the gate insulating layer 34 using a dry etching method.

[0064] Exemplarily, the method for preparing the source contact area and the drain contact area of ​​the active layer 33 can be: first, use plasma to treat the area on the active layer 33 that is not protected by the gate insulating layer 34 to form an N+ conductor area, which is used as the source contact area and the drain contact area; the area on the active layer 33 corresponding to the area below the gate insulating layer 34 is not treated and is used as a TFT channel.

[0065] For example, the interlayer dielectric layer 36 may be a silicon oxide (SiO2) film, and the thickness of the gate insulating layer 34 may be

[0066] For example, the source-drain electrode layer 37 may be a single substance such as molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or an alloy of two or more of the above metals; the thickness of the source-drain electrode layer 37 may be

[0067] It can be understood that the source-drain layer 37 includes a source 372 and a drain 371 that are spaced apart, and a source contact hole and a source contact hole are also provided on the interlayer dielectric layer 36. The source 372 is connected to the source contact area of ​​the active layer 33 through the source contact hole, and the drain 371 is connected to the drain contact area of ​​the active layer 33 through the drain contact hole.

[0068] Exemplarily, a light shielding layer 31 is further provided between the second barrier layer 26 and the buffer layer 32 , and the light shielding layer 31 is provided corresponding to the active layer 33 to prevent light from irradiating the active layer 33 and causing unstable performance of the TFT device.

[0069] Exemplarily, the interlayer dielectric layer 36 and the buffer layer 32 are provided with overlapping holes, so that the source electrode 372 is connected to the light shielding layer 31 via the overlapping holes, thereby forming a storage capacitor between the active layer 33 and the light shielding layer 31, and the storage capacitor can supply power to the TFT.

[0070] For example, the passivation layer 38 may be a silicon oxide (SiO2) thin film, and the thickness of the passivation layer 38 may be

[0071] Exemplarily, the TFT layer 30 may further include a connection layer 39 disposed between the passivation layer 38 and the planar layer 391 , a first via hole is disposed on the passivation layer 38 , and the connection layer 39 is connected to the source electrode 372 through the first via hole.

[0072] For example, the material of the planar layer 391 may be an organic photoresist material, and the thickness of the planar layer 391 may be A second via hole is disposed in a region of the planar layer 391 corresponding to the connection layer 39 .

[0073] S300, see Figure 4, an OLED layer 40 is disposed on a side of the TFT layer 30 away from the flexible substrate 20 .

[0074] Exemplarily, the OLED layer 40 includes an anode 41 , a light-emitting layer 43 , and a cathode 44 which are stacked in sequence, wherein the anode 41 is connected to the connection layer 39 through a second via hole on the planar layer 391 .

[0075] Exemplarily, the OLED layer 40 further includes a pixel definition layer 42 disposed on the flat layer 391 away from the passivation layer 38 , an opening 421 is disposed in a region of the pixel definition layer 42 corresponding to the anode 41 , and the light emitting layer 43 is disposed in the opening.

[0076] For example, the material of the pixel definition layer 42 may be an organic photoresist material, and the thickness of the pixel definition layer 42 may be The opening 421 is formed by a photolithography process.

[0077] Exemplarily, the material of the anode 41 may be a metal material with high reflectivity, and the anode may be an ITO / Ag / ITO stacked structure, an IZO / Ag / IZO stacked structure, an ITO / Al / ITO stacked structure, or an IZO / Al / IZO stacked structure.

[0078] Please combine Figure 4 After the OLED layer 40 is disposed on the side of the TFT layer 30 away from the flexible substrate 20, an encapsulation layer 50 may be formed on the OLED layer 40 to encapsulate and protect the OLED device. For example, the encapsulation layer 50 may be a thin film encapsulation layer (TFE).

[0079] S400, see Figure 5 , remove the carrying substrate 10 to obtain the flexible OLED display panel 100.

[0080] Exemplarily, “removing the carrier substrate 10” may specifically include: irradiating the peeling layer 21 with a laser from a side of the carrier substrate 10 away from the peeling layer 21 to weaken the adhesion between the peeling layer 21 and the carrier substrate 10, and then peeling the carrier substrate 10 off the peeling layer 21.

[0081] It should be noted that when the material of the stripping layer 21 includes a-Si, due to the a-Si process, the stripping layer 21 is usually doped with hydrogen elements. Therefore, when the stripping layer 21 is irradiated with laser, the hydrogen elements in the stripping layer 21 will escape from the stripping layer 21 and be released in the form of hydrogen gas. When the content of hydrogen elements in the stripping layer 21 decreases, the adhesion between the stripping layer 21 and the supporting substrate 10 is weakened. Therefore, a smaller force can be used to strip the supporting substrate 10 from the stripping layer 21.

[0082] In summary, the manufacturing method of the flexible OLED display panel provided in the embodiment of the present application, by setting the first groove 211 on the peeling layer 21, a part of the area of ​​the first flexible film layer 22 is filled in the first groove 211 to form a first convex structure, when the flexible OLED display panel 100 is bent, the first convex structure can release the bending stress, thereby greatly improving the bending resistance of the flexible OLED display panel 100, effectively reducing the damage caused by bending to TFT and OLED devices, and improving product performance. Furthermore, in the embodiment of the present application, by setting the first through hole 241 on the adhesive layer 24, a part of the area of ​​the second flexible film layer 25 is filled in the first through hole 241 to form a second convex structure, and the second convex structure can further release the bending stress and improve the bending resistance of the flexible OLED display panel 100. Furthermore, in the embodiment of the present application, a recessed structure 395 is set on the buffer layer 32, the interlayer dielectric layer 36 and the passivation layer 38, so that a partial area of ​​the flat layer 391 is filled in the recessed structure 395 to form a third protruding structure. The third protruding structure can further release the bending stress and improve the bending resistance of the flexible OLED display panel 100.

[0083] Please combine Figure 5 The embodiment of the present application also provides a flexible OLED display panel 100, which can be manufactured using the method for manufacturing a flexible OLED display panel in any of the above embodiments. The flexible OLED display panel 100 may include a flexible substrate 20, a TFT layer 30, and an OLED layer 40 stacked in sequence, the TFT layer 30 being disposed on one side of the flexible substrate 20, and the OLED layer 40 being disposed on a side of the TFT layer 30 away from the flexible substrate 20.

[0084] The flexible substrate 20 includes a peeling layer 21 and a first flexible film layer 22 disposed on the peeling layer 21 and facing the TFT layer 30 . The peeling layer 21 is provided with a first groove 211 . The first flexible film layer 22 fills the first groove 211 to form a first protruding structure.

[0085] Exemplarily, the material of the lift-off layer 21 includes a-Si.

[0086] Exemplarily, the flexible substrate 20 further includes a first barrier layer 23, an adhesive layer 24, a second flexible film layer 25, and a second barrier layer 26, wherein the first barrier layer 23 is disposed on a side of the first flexible film layer 22 away from the peeling layer 21, the adhesive layer 24 is disposed on a side of the first barrier layer 23 away from the first flexible film layer 22, the second flexible film layer 25 is disposed on a side of the adhesive layer 24 away from the first barrier layer 23, and the second barrier layer 26 is disposed on a side of the second flexible film layer 25 away from the adhesive layer 24;

[0087] The adhesive layer 24 is provided with a first through hole 241 , and the portion of the second flexible film layer 25 filled in the first through hole 241 forms a second protruding structure.

[0088] Exemplarily, the material of the bonding layer 24 includes a-Si.

[0089] Exemplarily, the TFT layer 30 includes a buffer layer 32, an active layer 33, a gate insulating layer 34, a gate 35, an interlayer dielectric layer 36, a source and drain electrode layer 37, a passivation layer 38, and a planarization layer 391 which are sequentially stacked;

[0090] The buffer layer 32, the interlayer dielectric layer 36 and the passivation layer 38 are provided with a recessed structure 395, the recessed structure 395 includes a second through hole provided on the passivation layer 38, a third through hole provided on the interlayer dielectric layer 36 and a second groove provided on the buffer layer 32, and the second through hole, the third through hole and the second groove are provided correspondingly;

[0091] The material of the planar layer 391 is an organic material, and the portion of the planar layer 391 filling the recessed structure 395 forms a third protruding structure.

[0092] Exemplarily, a light shielding layer 31 is further provided between the second barrier layer 26 and the buffer layer 32 , and the light shielding layer 31 is provided corresponding to the active layer 33 to prevent light from irradiating the active layer 33 and causing unstable performance of the TFT device.

[0093] Exemplarily, the interlayer dielectric layer 36 and the buffer layer 32 are provided with overlapping holes, so that the source electrode 372 is connected to the light shielding layer 31 via the overlapping holes, thereby forming a storage capacitor between the active layer 33 and the light shielding layer 31, and the storage capacitor can supply power to the TFT.

[0094] Exemplarily, the TFT layer 30 may further include a connecting layer 39 disposed between the passivation layer 38 and the planarizing layer 391 , a first via hole being disposed on the passivation layer 38 , the connecting layer 39 being connected to the source electrode 372 through the first via hole, and a second via hole being disposed on the planarizing layer 391 in an area corresponding to the connecting layer 39 .

[0095] Exemplarily, the OLED layer 40 includes an anode 41 , a pixel definition layer 42 , a light emitting layer 43 and a cathode 44 which are arranged in sequence, wherein the anode 41 is connected to the connection layer 39 through a second via hole on the planar layer 391 .

[0096] Exemplarily, an encapsulation layer 50 is disposed above the OLED layer 40 for encapsulating and protecting the OLED device.

[0097] Exemplarily, the light-emitting side of the flexible OLED display panel 100 is the side where the cathode 44 is located, that is, the flexible OLED display panel 100 is a top-emitting OLED display panel.

[0098] The above is a detailed introduction to the manufacturing method of the flexible OLED display panel and the flexible OLED display panel provided in the embodiment of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the present application. At the same time, for those skilled in the art, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for manufacturing a flexible OLED display panel, characterized in that: include: Providing a carrier substrate, on which a flexible substrate is arranged, wherein the flexible substrate comprises a peeling layer and a first flexible film layer which are stacked in sequence, wherein a first groove is arranged on the peeling layer, and a portion of the first flexible film layer filled in the first groove forms a first protruding structure; Disposing a TFT layer on a side of the flexible substrate away from the carrier substrate; Disposing an OLED layer on a side of the TFT layer away from the flexible substrate; Removing the carrier substrate to obtain a flexible OLED display panel; The step of providing a TFT layer on a side of the flexible substrate away from the carrier substrate comprises: providing a buffer layer, an active layer, a gate insulating layer, a gate, an interlayer dielectric layer, a source-drain electrode layer, a passivation layer and a planarization layer in sequence on a side of the flexible substrate away from the carrier substrate; Wherein, a recessed structure is provided on the buffer layer, the interlayer dielectric layer and the passivation layer, and the recessed structure includes a second through hole provided on the passivation layer, a third through hole provided on the interlayer dielectric layer and a second groove provided on the buffer layer, and the second through hole, the third through hole and the second groove are provided correspondingly; The material of the planar layer is an organic material, and the portion of the planar layer filled in the concave structure forms a third convex structure.

2. The method for manufacturing a flexible OLED display panel according to claim 1, characterized in that: The flexible substrate further comprises a first barrier layer, an adhesive layer, a second flexible film layer and a second barrier layer, wherein the first barrier layer is arranged on a side of the first flexible film layer away from the peeling layer, the adhesive layer is arranged on a side of the first barrier layer away from the first flexible film layer, the second flexible film layer is arranged on a side of the adhesive layer away from the first barrier layer, and the second barrier layer is arranged on a side of the second flexible film layer away from the adhesive layer; Wherein, a first through hole is provided on the adhesive layer, and a portion of the second flexible film layer filled in the first through hole forms a second protruding structure.

3. The method for manufacturing a flexible OLED display panel according to claim 1, characterized in that: The material of the lift-off layer includes a-Si.

4. The method for manufacturing a flexible OLED display panel according to claim 3, characterized in that: The removing of the carrier substrate comprises: irradiating the peeling layer with laser from a side of the carrier substrate away from the peeling layer to weaken the adhesion between the peeling layer and the carrier substrate, and then peeling the carrier substrate off the peeling layer.

5. A flexible OLED display panel, characterized in that: include: Flexible substrate; A TFT layer, disposed on one side of the flexible substrate; An OLED layer, disposed on a side of the TFT layer away from the flexible substrate; The flexible substrate includes a peeling layer and a first flexible film layer disposed on the peeling layer and facing the TFT layer, the peeling layer is provided with a first groove, and a portion of the first flexible film layer filled in the first groove forms a first convex structure; The TFT layer includes a buffer layer, an active layer, a gate insulating layer, a gate, an interlayer dielectric layer, a source and drain electrode layer, a passivation layer and a planarization layer which are stacked in sequence; Wherein, a recessed structure is provided on the buffer layer, the interlayer dielectric layer and the passivation layer, and the recessed structure includes a second through hole provided on the passivation layer, a third through hole provided on the interlayer dielectric layer and a second groove provided on the buffer layer, and the second through hole, the third through hole and the second groove are provided correspondingly; The material of the planar layer is an organic material, and the portion of the planar layer filled in the concave structure forms a third convex structure.

6. The flexible OLED display panel according to claim 5, characterized in that: The material of the lift-off layer includes a-Si.

7. The flexible OLED display panel according to claim 5, characterized in that: The flexible substrate further comprises a first barrier layer, an adhesive layer, a second flexible film layer and a second barrier layer, wherein the first barrier layer is arranged on a side of the first flexible film layer away from the peeling layer, the adhesive layer is arranged on a side of the first barrier layer away from the first flexible film layer, the second flexible film layer is arranged on a side of the adhesive layer away from the first barrier layer, and the second barrier layer is arranged on a side of the second flexible film layer away from the adhesive layer; Wherein, a first through hole is provided on the adhesive layer, and a portion of the second flexible film layer filled in the first through hole forms a second protruding structure.

8. The flexible OLED display panel according to claim 7, characterized in that: The material of the bonding layer includes a-Si.

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