Surface treatment device

Abstract

When the surface treatment device (1a) performs surface treatment on a workpiece (W) by a plasma generating device (40) (surface treatment mechanism) or a sputtering device (70) (surface treatment mechanism), the receiving unit (100) is swung by a servo motor (120) (stirring mechanism). Thus, the workpiece (W) received in the receiving unit (100) is stirred, and the surface of the workpiece (W) is uniformly treated as a whole. Therefore, even if the workpiece (W) to be surface treated is a small three-dimensional shape, the surface can be uniformly treated as a whole.

Description

Technical Field

[0001] The present invention relates to a surface treatment apparatus for performing surface treatment such as irradiating a workpiece with plasma. Background Art

[0002] Conventionally, there are known surface treatment apparatuses that clean or modify the surface of a workpiece using plasma to form a metal catalyst layer or a functional group, or surface treatment apparatuses that perform sputtering using a sputtering apparatus.

[0003] For example, in the plasma film forming apparatus described in Patent Document 1, a plurality of substrate holders used as anode electrodes are provided, and a plurality of cathode electrodes are formed between the plurality of substrate holders. Furthermore, a reaction gas is introduced between the electrodes and an AC power is supplied between the electrodes, so that the reaction gas becomes a plasma state, and a thin film is formed on the substrate.

[0004] Prior art literature

[0005] Patent Document 1: Japanese Patent No. 5768890 Summary of the invention

[0006] Problems to be solved by the invention

[0007] The plasma film forming apparatus of Patent Document 1 is suitable for forming a large amount of film on thin plate-shaped parts, but cannot uniformly irradiate the surface of smaller three-dimensional parts with plasma, so it is impossible to uniformly form a film on the entire surface of smaller three-dimensional parts.

[0008] The present invention has been made in view of the above, and an object of the present invention is to provide a surface treatment film device capable of uniformly treating the entire surface even if a workpiece to be treated is a small three-dimensional shape.

[0009] Means used to solve problems

[0010] In order to solve the above-mentioned problems and achieve the purpose, the surface treatment device of the present invention is characterized in that it comprises: a receiving unit for receiving the treated workpiece; a surface treatment mechanism for performing surface treatment on the treated workpiece received in the above-mentioned receiving unit; and a stirring mechanism for stirring the above-mentioned treated workpiece when the above-mentioned surface treatment mechanism performs surface treatment on the above-mentioned treated workpiece.

[0011] Effects of the Invention

[0012] The surface treatment apparatus according to the present invention has an effect of being able to uniformly perform surface treatment on the entire surface even when the workpiece to be treated is a small three-dimensional part. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a schematic diagram showing the device structure of the surface treatment device according to the first embodiment.

[0014] Figure 2 yes Figure 1 Schematic diagram of the A-A section.

[0015] Figure 3 It is a schematic diagram of a case where a plasma generating device is located in a chamber.

[0016] Figure 4 is a schematic diagram of a sputtering device located in a chamber.

[0017] Figure 5 This is a detailed diagram of a plasma generating device.

[0018] Figure 6 yes Figure 5 B-B section view.

[0019] Figure 7 This is a detailed diagram of the sputtering apparatus.

[0020] Figure 8 yes Figure 7 C-C section view.

[0021] Fig. 9 This is an explanatory diagram of the structure around the storage unit when the plasma generation device is located in the chamber.

[0022] Fig.10 This is an explanatory diagram of the structure around the housing unit when the sputtering device is located in the chamber.

[0023] Fig.11 yes Fig. 9 D-D section view.

[0024] Fig.12 yes Fig.10 E-E section view.

[0025] Fig.13 This is a three-dimensional image of the containment unit.

[0026] Fig.14 Yes means Fig.11 An explanatory diagram showing a state in which a storage unit and a storage unit supporting member are swinging.

[0027] Fig.15 Yes means Fig.12 An explanatory diagram showing a state in which a storage unit and a storage unit supporting member are swinging.

[0028] Fig.16 It is a front view and a side view which show an example of the shape of a storage unit.

[0029] Fig.17 yes Figure 1 Detailed view of the pump unit shown.

[0030] Fig.18 Yes Fig.17 Detailed view of the lifting shaft and turbine jack top viewed from the F-F direction.

[0031] Fig.19 yes Fig.17 Schematic cross-section of .

[0032] Fig. 20 Yes means Fig.19 The illustrated diagram is a diagram of a lift valve in a state where the opening is opened.

[0033] Fig.21 This is a flowchart showing a procedure for performing surface treatment on a workpiece by a surface treatment apparatus according to an embodiment.

[0034] Fig. 22 This is a three-dimensional diagram of another form of a containment unit.

[0035] Fig.23 yes Fig. 22 A top view and a side view of the containment unit.

[0036] Fig.24 This is a hardware block diagram illustrating the hardware configuration of the surface treatment device according to the second embodiment.

[0037] Fig.25 It is a diagram showing a specific example of the swing pattern. DETAILED DESCRIPTION

[0038] Hereinafter, the embodiment of the surface treatment device of the present invention will be described in detail based on the accompanying drawings. In addition, the invention is not limited by the embodiment. In addition, the constituent elements of the following embodiments include those that can be replaced and easily thought of by a person skilled in the art, or those that are substantially the same.

[0039] [1. First embodiment]

[0040] The first embodiment of the present invention is an example of a surface treatment device 1a that irradiates plasma onto the surface of a treatment workpiece W formed of, for example, a resin material to generate functional groups on the surface of the treatment workpiece W, and then forms a thin film by sputtering on the surface of the treatment workpiece W, wherein the adhesion of the film is improved due to the generation of the functional groups.

[0041] [1-1. Description of the structure of the surface treatment device]

[0042] Figure 1 It is a schematic diagram showing the device structure of the surface treatment device according to the first embodiment. Figure 2yes Figure 1 A-A cross-sectional schematic diagram. In addition, in the following description, the up-down direction of the surface treatment device 1a in the normal use state is set as the up-down direction Z of the surface treatment device 1a, the upper side of the surface treatment device 1a in the normal use state is set as the upper side of the surface treatment device 1a, and the lower side of the surface treatment device 1a in the normal use state is set as the lower side of the surface treatment device 1a. In addition, the horizontal direction of the surface treatment device 1a in the normal use state is set as the horizontal direction of the surface treatment device 1a. Furthermore, the extension direction of the swing axis 111 of the storage unit support part 110 in the horizontal direction is set as the length direction Y of the surface treatment device 1a, and the direction of the surface treatment device 1a orthogonal to both the up-down direction Z and the length direction Y is set as the width direction X of the surface treatment device 1a.

[0043] The surface treatment device 1a according to the present embodiment comprises: a chamber 10 formed to be able to accommodate a workpiece W therein; a plasma generating device 40, which is an example of a surface treatment mechanism for performing surface treatment on the workpiece W; a sputtering device 70, which is an example of a surface treatment mechanism for performing surface treatment on the workpiece W different from that of the plasma generating device 40; a receiving unit 100 for receiving the workpiece W; and a pump unit 140 for reducing the pressure in the chamber 10. The workpiece W is a small three-dimensional workpiece formed of a resin material such as a plastic resin.

[0044] The plasma generating device 40 generates plasma and irradiates the generated plasma to the workpiece W, thereby performing surface treatment on the workpiece W. More specifically, functional radicals are generated by irradiating the surface of the workpiece W with plasma. Thus, the adhesion of a thin film is improved when a thin film is generated as a base for plating the surface of the workpiece W in a later step.

[0045] The sputtering device 70 performs sputtering on the workpiece W that has been surface-treated by the plasma generating device 40, thereby performing surface treatment on the workpiece W to form a thin film as a base for plating. In addition, as described later, the plasma generating device 40 and the sputtering device 70 can perform different surface treatments on the same workpiece W by switching the devices disposed on one side of the chamber 10 (see Figure 3 , Figure 4 ).

[0046] in addition, Figure 1 , Figure 2Since the positional relationship in the chamber 10 when the plasma generating device 40 or the sputtering device 70 is located in the chamber 10 is shown, it is a schematic diagram applicable even when the device located on one side in the chamber 10 is either the plasma generating device 40 or the sputtering device 70. The chamber 10 is formed in a hollow substantially rectangular parallelepiped shape, and the plasma generating device 40 and the sputtering device 70 are mounted on an upper wall 12 as an upper wall surface and are arranged in the chamber 10. In addition, in the chamber 10, a gas inlet 16 for allowing a gas used when the sputtering device 70 performs sputtering to flow into the chamber 10 is arranged on a side wall 13 of the chamber 10.

[0047] In addition, the storage unit 100 is built in the chamber 10 in a state supported by the storage unit support member 110. Thus, the chamber 10 can store the workpiece W inside.

[0048] A correction plate 130a is provided inside the storage unit 100. The correction plates 130a are provided on the plasma generation device 40 and the sputtering device 70, and two correction plates 130a are provided in an opposed state with a gap substantially equal to the dimension in the longitudinal direction Y of the plasma generation device 40 and the sputtering device 70. When the correction plates 130a store the workpiece W in the storage unit 100, the range of storing the workpiece W is limited to the area between the two correction plates 130a. That is, the range of storing the workpiece W is corrected (limited) from the entire area of ​​the storage unit 100 to the area between the two correction plates 130a.

[0049] In addition, the dimension of the width direction X of the receiving unit 100 is as follows: Figure 2 As shown, the width direction X of the plasma generating device 40 and the sputtering device 70 is substantially equal. Therefore, when the workpiece W is accommodated in the accommodating unit 100, the range of the width direction X for accommodating the workpiece W is limited to the range substantially equal to the width direction X of the plasma generating device 40 and the sputtering device 70.

[0050] The storage unit support member 110 is connected to a support wall 14 that is a set of opposing side walls 13 among the plurality of side walls 13 constituting the chamber 10 via a swing shaft 111 , and is supported by the support wall 14 .

[0051] The storage unit support member 110 is swung with the swing shaft 111 extending in the longitudinal direction Y toward the opposing support wall 14 as a support axis. That is, a servo motor 120 is installed in the chamber 10 as a swing mechanism for swinging the storage unit 100, and the storage unit support member 110 is swung by the driving force transmitted from the servo motor 120. When the storage unit support member 110 swings, the storage unit 100 supported by the storage unit support member 110 is integrated with the storage unit support member 110 with the swing shaft 111 as a support axis, and swings to the left and right sides. Figure 2 The receiving unit 100 is swung in the direction of the angle θ shown. Furthermore, the workpiece W received in the receiving unit 100 is stirred inside the receiving unit 100 as the receiving unit 100 swings. In addition, the swing shaft 111 penetrates the receiving unit 100 in the longitudinal direction, that is, in the direction parallel to the plasma generating device 40 and the sputtering device 70.

[0052] The pump unit 140 is as follows Figure 1 As shown, the bottom 15 of the chamber 10 is installed to reduce the pressure in the chamber 10 by sucking the fluid in the chamber 10, that is, the gas in the chamber 10.

[0053] The pump unit 140 has a flow regulating valve 150 as a valve unit for regulating the flow rate of the fluid and a turbomolecular pump 170 as a pump for pumping the fluid. By using the flow regulating valve 150 to regulate the flow rate of the fluid pumped by the turbomolecular pump 170, the pressure in the chamber 10 is reduced to a desired pressure.

[0054] The flow control valve 150 includes a lift valve 153 disposed in the chamber 10 and a servo actuator 160 as a driving mechanism for moving the lift valve 153 in the up-down direction Z in the chamber 10. The lift valve 153 adjusts the flow rate of the fluid pumped by the turbomolecular pump 170 by moving in the up-down direction Z in the chamber 10. The lift valve 153 is guided in opening and closing motion by a valve guide 165.

[0055] In addition, the flow control valve 150 includes a lifting shaft 162 connected to the lifting valve 153, and a turbine jack 161 that transmits power generated by the servo actuator 160 to the lifting shaft 162 to move the lifting shaft 162 in the vertical direction Z. In addition, a vacuum gauge 180 is installed in the chamber 10, and the pressure in the chamber 10 is detected by the vacuum gauge 180. The servo actuator 160 operates based on the detection value detected by the vacuum gauge 180, and the lifting valve 153 is moved based on the detection value detected by the vacuum gauge 180. Lifting valve 153 moves in the up-down direction Z to adjust the flow rate of the fluid pumped by the turbomolecular pump 170 .

[0056] Figure 3 , Figure 4This is a schematic diagram for explaining the switching of the plasma generation device 40 and the sputtering device 70 located in the chamber 10. In particular, Figure 3 Schematic diagram of a plasma generating device located in a chamber. Figure 4 It is a schematic diagram of a case where the sputtering device 70 is located in the chamber.

[0057] The chamber 10 has an opening 11 at the top, and the plasma generating device 40 and the sputtering device 70 are respectively introduced into the chamber 10 through the opening 11 to switch the devices in the chamber 10. Figure 3 As shown in FIG. 1 , the sputtering device 70 is disposed on the first opening and closing member 20 which is installed on the chamber 10 so as to be openable and closable via the hinge 21. Figure 4 As shown, the second opening and closing member 30 is disposed on the chamber 10 so as to be openably and closably mounted via a hinge portion 31 .

[0058] The shapes of the first opening and closing member 20 and the second opening and closing member 30 in a plan view are both roughly rectangular, and are roughly the same as the shape of the periphery formed by the plurality of side walls 13 when the chamber 10 is projected in the up-down direction Z. Therefore, the first opening and closing member 20 and the second opening and closing member 30 are shaped so as to cover the opening 11 of the chamber 10. That is, the first opening and closing member 20 and the second opening and closing member 30 cover the opening 11 of the chamber 10 to close the opening 11. In addition, the first opening and closing member 20 and the second opening and closing member 30 are rotatably mounted relative to the chamber 10, so that the first opening and closing member 20 and the second opening and closing member 30 open and close the opening 11 by rotating relative to the chamber 10.

[0059] In detail, one side of the rectangular shape of the first opening and closing member 20 and one side wall 13 of the chamber 10 are connected by a hinge 21. The hinge 21 connects the first opening and closing member 20 to the chamber 10 rotatably with a rotation axis extending in the horizontal direction as a support axis. The first opening and closing member 20 is switched between a position in which the opening 11 of the chamber 10 is covered and closed, and a position in which the opening 11 is opened by being flipped up to the upper side of the opening 11. The plasma generating device 40 is installed so as to penetrate the first opening and closing member 20 in the thickness direction of the first opening and closing member 20. In addition, when the first opening and closing member 20 rotatably connected to the chamber 10 is closed, the plasma generating device 40 is installed on the first opening and closing member 20 in an orientation in which the portion of the plasma generating device 40 generating plasma is located in the chamber 10.

[0060] The second opening and closing member 30 is connected to a side wall 13 of the plurality of side walls 13 of the chamber 10, which is opposite to the side wall 13 connected to the first opening and closing member 20, by a hinge 31. The hinge 31 connects the second opening and closing member 30 to the chamber 10 rotatably with a rotation axis extending in the horizontal direction as a support axis. The second opening and closing member 30 is switched between a position in which the opening 11 of the chamber 10 is covered and closed, and a position in which the opening 11 is opened by being popped up above the opening 11. The sputtering device 70 is installed so that the second opening and closing member 30 is penetrated in the thickness direction of the second opening and closing member 30. In addition, when the second opening and closing member 30 rotatably connected to the chamber 10 is closed, the sputtering device 70 is installed on the second opening and closing member 30 in a direction in which the portion to be sputtered in the sputtering device 70 is located in the chamber 10.

[0061] When the first opening and closing member 20 and the second opening and closing member 30 close the opening 11 of the chamber 10, one of the first opening and closing member 20 and the second opening and closing member 30 is closed and the other is open. That is, the first opening and closing member 20 and the second opening and closing member 30 close the opening 11 of the chamber 10 while the other does not close the opening 11. Therefore, the first opening and closing member 20 closes the opening 11 while the second opening and closing member 30 does not close the opening 11, so that the plasma generating portion of the plasma generating device 40 is located in the chamber 10 (see Figure 3 Similarly, the second opening and closing member 30 closes the opening 11 when the first opening and closing member 20 does not close the opening 11, so that the portion of the sputtering device 70 that performs sputtering is located in the chamber 10 (see Figure 4 ).

[0062] [1-2. Description of plasma generation device]

[0063] Figure 5 This is a detailed diagram of a plasma generating device. Figure 6 yes Figure 5 The plasma generating device 40 includes a gas supply pipe 41 for supplying a gas used in generating plasma, and a pair of plate-shaped conductors 51 and 52 for generating plasma from the gas supplied from the gas supply pipe 41 by a high frequency voltage.

[0064] In detail, the gas supply pipe 41 penetrates the first opening and closing member 20 in the thickness direction of the first opening and closing member 20, and is mounted on the first opening and closing member 20 by using a gas supply pipe mounting member 45. In addition, inside the gas supply pipe 41, a gas flow path 42 is formed along the extension direction of the gas supply pipe 41, and gas is supplied from the outside of the chamber 10 to the inside of the chamber 10 through the gas flow path 42. In addition, at the end of the gas supply pipe 41 on the outside of the first opening and closing member 20 (the outside of the chamber 10), a gas supply section 44 for supplying gas to the gas supply pipe 41 is connected, and at the end of the other end side of the gas supply pipe 41 (the inside of the chamber 10), a gas supply hole 43 is formed as a hole for introducing the gas flowing in the gas flow path 42 into the chamber 10. For the gas supply section 44, a mass flow controller (MFC) 64 (refer to Figure 6 )Supply gas.

[0065] The pair of plate-shaped conductors 51 and 52 are both formed in a flat plate shape, and are formed by arranging metal plates such as aluminum or other conductor plates in parallel. In addition, the plate-shaped conductors 51 and 52 only need to have a dielectric film on the surface, and the surface of the plasma gas outlet side of the pair of plate-shaped conductors 51 and 52 may be covered with a dielectric film by alumina spraying or hard anodizing treatment to avoid arc discharge, etc., or the plate-shaped conductors 51 and 52 may be subjected to alumina spraying or hard anodizing treatment on both sides of the pair of plate-shaped conductors 51 and 52. In addition, the pair of plate-shaped conductors 51 and 52 form electrodes of the plasma generating device 40.

[0066] The pair of plate-shaped conductors 51 and 52 are supported by a support plate 50. The support plate 50 is formed of an insulating material such as glass or ceramic. The support plate 50 is formed in a shape having a convex portion formed all around the periphery of one side of the plate. In other words, the support plate 50 is formed in a thick plate shape having a concave portion 50a formed along the periphery of the support plate 50 on one side.

[0067] The support plate 50 formed in this way is arranged in an orientation such that the surface on the side where the recessed portion 50a is not formed faces the first opening and closing member 20, and the surface on the side where the recessed portion 50a is formed is located on the opposite side to the side where the first opening and closing member 20 is located, and is supported by the support member 46. The support member 46 has a cylindrical member and mounting members located at both ends of the cylindrical member, the mounting member on one end side is mounted on the first opening and closing member 20, and the mounting member on the other end side is mounted on the support plate 50. Thus, the support plate 50 is supported by the support member 46 arranged between the support plate 50 and the first opening and closing member 20 and mounted on both.

[0068] The gas supply pipe 41 passing through the first opening and closing member 20 extends to the position of the support plate 50 through the inner side of the cylindrical member of the support member 46, and passes through the support plate 50. In addition, the gas supply hole 43 formed in the gas supply pipe 41 is arranged at the portion of the support plate 50 where the recessed portion 50a is formed.

[0069] The pair of plate-shaped conductors 51 and 52 are arranged on the side of the support plate 50 where the recess 50a is formed, so as to cover the recess 50a. At this time, the pair of plate-shaped conductors 51 and 52 are arranged with a spacer 55 near the outer periphery between the two, and are overlapped via the spacer 55. In this way, the plate-shaped conductors 51 and 52 are separated from each other in the portion other than the portion where the spacer 55 is arranged in the pair of plate-shaped conductors 51 and 52 overlapped via the spacer 55, and a gap 56 is formed. The interval between the pair of plate-shaped conductors 51 and 52 is preferably appropriately set according to the frequency of the gas introduced into the plasma generation device 40 and the power supplied, and the size of the electrode, and is, for example, about 3 mm to 12 mm.

[0070] The pair of plate-shaped conductors 51 and 52 are held by a holding member 58 as a member for holding the plate-shaped conductors 51 and 52 in a state where they are stacked via a spacer 55. That is, the holding member 58 is arranged on the opposite side of the plate-shaped conductors 51 and 52 to the side where the support plate 50 is located, and is mounted on the support plate 50 in a state where the plate-shaped conductors 51 and 52 are sandwiched between the holding member 58 and the support plate 50. Thus, the pair of plate-shaped conductors 51 and 52 stacked via the spacer 55 are held by the holding member 58 in a state where they are sandwiched between the holding member 58 and the support plate 50.

[0071] The pair of plate-shaped conductors 51 and 52 are arranged so as to cover the recessed portion 50 a of the support plate 50 , and a space is formed between the recessed portion 50 a of the support plate 50 and the plate-shaped conductors 51 and 52 when held by the holding member 58 .

[0072] In the case where the plate-shaped conductor part 52 of the pair of plate-shaped conductor parts 51 and 52 arranged in an overlapping manner is arranged on the support plate 50 side and the plate-shaped conductor part 51 is arranged on the holding member 58 side, the space is partitioned by the recessed portion 50a of the support plate 50 and the plate-shaped conductor part 52. The space thus formed is formed as a gas introduction part 57 into which the gas supplied by the gas supply pipe 41 is introduced. The gas supply hole 43 of the gas supply pipe 41 is located in the gas introduction part 57 and opens on the gas introduction part 57. The gas introduction part 57 is partitioned by attaching the support plate 50 and the plate-shaped conductor part 52 in close contact.

[0073] In addition, a plurality of through holes 53 and 54 penetrating in the thickness direction are formed on the pair of plate-shaped conductor parts 51 and 52, respectively. That is, on the plate-shaped conductor part 52 located on the inflow side of the gas supplied from the gas supply pipe 41, a plurality of through holes 54 are formed at predetermined intervals in a matrix when viewed from the thickness direction of the plate-shaped conductor part 52, and on the plate-shaped conductor part 51 located on the outflow side of the gas supplied from the gas supply pipe 41, a plurality of through holes 53 are formed at predetermined intervals in a matrix when viewed from the thickness direction of the plate-shaped conductor part 51.

[0074] The through hole 53 of the plate-shaped conductor part 51 and the through hole 54 of the plate-shaped conductor part 52 are cylindrical holes, respectively, and the through holes 53 and 54 of the two are arranged on the same axis. That is, the through hole 53 of the plate-shaped conductor part 51 and the through hole 54 of the plate-shaped conductor part 52 are arranged at positions where the centers of the through holes are aligned. Among them, the through hole 53 of the plate-shaped conductor part 51 has a smaller diameter than the through hole 54 of the plate-shaped conductor part 52 on the gas inflow side. In this way, a plurality of through holes 53 and 54 are formed on a pair of plate-shaped conductor parts 51 and 52 to form a hollow electrode structure, and the generated plasma gas flows at a high density through these plurality of through holes 53 and 54.

[0075] A gap 56 is sandwiched between the parallel plate-shaped plate-shaped conductors 51 and 52, and the gap 56 functions as a capacitor having electrostatic capacitance. Furthermore, a conductive portion (not shown) is formed by a conductive member on the support plate 50 and the plate-shaped conductors 51 and 52, and the support plate 50 is grounded 63 through the conductive portion, and the plate-shaped conductor 52 is also grounded 63. In addition, one end of the high-frequency power supply (RF) 61 is grounded 63, and the other end of the high-frequency power supply 61 is connected to the plate-shaped conductor 51 through a matching box (MB) 60 for adjusting electrostatic capacitance and the like to obtain matching with plasma. Therefore, when the high-frequency power supply 61 is operated, the potential of the plate-shaped conductor 51 oscillates positively and negatively at a predetermined frequency such as 13.56 MHz.

[0076] [1-3. Description of sputtering device]

[0077] Figure 7 This is a detailed diagram of the sputtering apparatus. Figure 8 yes Figure 7The sputtering device 70 includes a cooling water pipe 71 through which cooling water flows, a magnet 81 that generates a magnetic field, a target 84 that ionizes and collides an inert gas (e.g., argon) flowing in from a gas inlet portion 16 in the magnetic field generated by the magnet 81 to thereby eject atoms for film formation, a cooling jacket 82 that cools the target 84, and a support plate 80 that supports the magnet 81, the target 84, and the cooling jacket 82. Specifically, the cooling water pipe 71 penetrates the second opening and closing member 30 in the thickness direction of the second opening and closing member 30, and is mounted on the second opening and closing member 30 by a cooling water pipe mounting member 75. In addition, the target 84 is, for example, a copper plate, and a thin film is formed on the surface of the workpiece W by the copper atoms ejected from the target 84 being in close contact with the surface of the workpiece W. The thin film formed in this way becomes a base when the surface of the workpiece W is plated in a subsequent process.

[0078] Furthermore, a cooling water path 72 is formed inside the cooling water pipe 71 along the extending direction of the cooling water pipe 71, so that cooling water circulates between the outside of the chamber 10 and the cooling jacket 82 disposed in the chamber 10. In addition, the end of the cooling water pipe 71 outside the second opening and closing member 30 (outside the chamber 10) is as shown in FIG. Figure 8 As shown, the cooling water pipe 71 is connected to a water inlet 73 as an inlet of cooling water and a water outlet 74 as an outlet of cooling water. Therefore, in the cooling water path 72 formed inside the cooling water pipe 71, a cooling water path 72 connected to the water inlet 73 and a cooling water path 72 connected to the water outlet 74 are formed. On the other hand, the end of the other end side (the inside of the chamber 10) of the cooling water pipe 71 is connected to the cooling jacket 82. The cooling jacket 82 has a flow path for cooling water formed inside, and the cooling water flows therein. Thus, the cooling water circulates between the outside of the chamber 10 and the cooling jacket 82.

[0079] The support plate 80 supports the magnet 81, the cooling jacket 82, and the target 84 in an overlapping state. In detail, the support plate 80, the magnet 81, the cooling jacket 82, and the target 84 are all formed in a plate-like shape, and the support plate 80 is formed in a shape larger in a plan view than the magnet 81, the cooling jacket 82, and the target 84. Therefore, the magnet 81, the cooling jacket 82, and the target 84 are held by the support plate 80 and the holding member 85 near the periphery of the surface on the opposite side of the surface on the cooling jacket 82 side of the target 84 supported by the holding member 85 in a state where the magnet 81, the cooling jacket 82, and the target 84 are overlapped in this order from the support plate 80 side. In addition, the periphery of the magnet 81, the cooling jacket 82, and the target 84 held by the holding member 85 is also held in a state surrounded by the holding member 85.

[0080] At this time, an insulating member 83 is disposed between the support plate 80 and the magnet 81, and the insulating member 83 is also disposed at the outer peripheral portion of the magnet 81 in a plan view. That is, the insulating member 83 is disposed between the support plate 80 and the magnet 81 and between the magnet 81 and the holding member 85. Therefore, the magnet 81 is held by the support plate 80 and the holding member 85 via the insulating member 83.

[0081] The surface of the support plate 80 holding the magnet 81 and the like is located on the opposite side to the side where the second opening and closing member 30 is located, and the surface of the support plate 80 holding the magnet 81 and the like is located on the side opposite to the second opening and closing member 30, and is supported by the support member 76. The support member 76 has a cylindrical member and mounting members located at both ends of the cylindrical member, the mounting member on one end side is mounted on the second opening and closing member 30, and the mounting member on the other end side is mounted on the support plate 80. At this time, the support plate 80 is mounted at a position near the central part when the support plate 80 is viewed in the thickness direction. Thus, the support plate 80 is arranged between the support plate 80 and the second opening and closing member 30 and supported by the support member 76 mounted on both.

[0082] In addition, the cooling water pipe 71 connected to the cooling jacket 82 at one end penetrates the support plate 80, the magnet 81 and the insulating member 83 from the side opposite to the side of the surface of the support plate 80 holding the magnet 81 etc. at a position different from the position where the support member 76 is arranged. Thus, the cooling water pipe 71 is connected to the cooling jacket 82.

[0083] [1-4. Description of the structure around the storage unit]

[0084] Fig. 9 , Fig.10 yes Figure 1 The accommodating unit 100, the accommodating unit supporting member 110 and the correction plate 130a shown in the figure, in particular, Fig. 9 This is an explanatory diagram of the structure around the storage unit when the plasma generation device is located in the chamber. Fig.10 1 is an explanatory diagram of the structure around the storage unit when the sputtering device is located in the chamber. Fig.11 yes Fig. 9 D-D section view. Fig.12 yes Fig.10 E-E section view.

[0085] like Fig. 9 As shown, the electrodes (a pair of plate-shaped conductors 51, 52) of the plasma generating device 40 are independently located outside the storage space R of the storage unit 100 for storing the workpiece W. More specifically, the storage space R of the storage unit 100 is located below the plasma generating device 40. Fig.10As shown, the magnet 81 and the target 84 of the sputtering device 70 are independently located outside the receiving space R of the receiving unit 100 . More specifically, the receiving space R of the receiving unit 100 is located below the sputtering device 70 .

[0086] The storage unit support member 110 is supported by being connected to a support wall 14 of a group of opposing side walls 13 of the chamber 10 through a swing shaft 111, and is swung by a driving force transmitted from a servo motor 120 as a swing mechanism. In detail, the storage unit support member 110 includes: a pair of side plates 112 separated in the longitudinal direction Y inside the chamber 10 and arranged in a direction parallel to the support wall 14; and a mounting member 113 extending in the longitudinal direction Y and arranged between the pair of side plates 112. Each side plate 112 is as shown in FIG. Fig.11 As shown in FIG. 1 , the semicircular plate is formed in a substantially semicircular plate shape, with the semicircular flat portion located near the opening 11 of the chamber 10 and the semicircular arc side portion located at the bottom 15 of the chamber 10 (see FIG. 1 ). Figure 3 , Figure 4 )'s orientation configuration nearby.

[0087] In addition, the interval of the side plates 112 in the longitudinal direction Y is larger than the size of the plasma generating device 40 or the sputtering device 70 in the longitudinal direction Y when the plasma generating device 40 or the sputtering device 70 is located in the chamber 10. Furthermore, when the plasma generating device 40 or the sputtering device 70 is located in the chamber 10, the upper end of the side plate 112 in the vertical direction Z in the chamber 10 is arranged to be located above the lower end of the plasma generating device 40 or the sputtering device 70 in the vertical direction Z.

[0088] In addition, the length of the semicircular flat portion of the side plate 112 is greater than the width of the plasma generating device 40 or the sputtering device 70 in the width direction X. In other words, the full width of the side plate 112 in the width direction X is greater than the full width of the plasma generating device 40 or the sputtering device 70 in the width direction X in the range where the side plate 112 is located in the vertical direction Z and the plasma generating device 40 or the sputtering device 70 overlaps with the side plate 112. In addition, the side plate 112 is formed in a substantially semicircular shape, with the arc side portion being located at the bottom 15 of the chamber 10 (see Figure 3 , Figure 4 ), so the width of the side plate 112 in the width direction X decreases from the upper side to the lower side.

[0089] The swing shaft 111 is arranged in a pair of side plates 112 with the axis parallel to the longitudinal direction Y, and different swing shafts 111 are connected to the side plates 112. The swing shaft 111 on the side where the servo motor 120 that causes the storage unit 100 to swing is located uses a drive shaft 125 that is connected to the output shaft 121 of the servo motor 120 and rotates as a whole with the output shaft 121 as the swing shaft 111. That is, the servo motor 120 is mounted on one of the support walls 14 of a group of support walls 14. The servo motor 120 is mounted on the surface of the outer side of the chamber 10 of the support wall 14 through the servo motor mounting component 122, and the output shaft 121 that outputs the driving force generated by the servo motor 120 penetrates the support wall 14 and extends from the support wall 14 into the chamber 10. The drive shaft 125 is disposed in the chamber 10, and is connected to the output shaft 121 in a state in which it cannot rotate relative to the output shaft 121 of the servo motor 120, that is, it is connected to the output shaft 121 in a state in which it can rotate integrally with the output shaft 121. In addition, the end of the drive shaft 125 on the opposite side of the end on one side connected to the output shaft 121 of the servo motor 120 is connected to the side plate 112 through the swing mechanism shaft connection part 114. Thus, the drive shaft 125 is used as the swing shaft 111, and the driving force generated by the servo motor 120 is transmitted from the output shaft 121 of the servo motor 120 to the drive shaft 125, and is transmitted from the drive shaft 125 to the side plate 112 of the storage unit support member 110.

[0090] The swing shaft 111 located on the side opposite to the servo motor 120 of the swing shaft 111 uses a support shaft 116. The support shaft 116 is supported at one end by a support shaft support member 117 and is connected to the side plate 112 via a support shaft connection portion 115 at the other end.

[0091] In more detail, the support shaft 116 penetrates the support wall 14 near the end portion on the side supported by the support shaft support member 117, and is supported in a non-rotatable state by the support shaft support member 117 from the surface of the support wall 14 outside the chamber 10. The support shaft 116 is rotatably supported near the end portion on the side connected to the support shaft connection portion 115 by the support shaft connection portion 115 mounted on the side plate 112. That is, the support shaft connection portion 115 and the support shaft 116 can rotate relative to each other around the axis of the support shaft 116.

[0092] The side plate 112 connected to the drive shaft 125 and the side plate 112 connected to the support shaft 116 are connected by a mounting member 113 disposed between the side plates 112. The mounting member 113 is composed of a rod-shaped member extending in the longitudinal direction Y, and both ends are mounted on different side plates 112. In addition, a plurality of mounting members 113 are provided, and the plurality of mounting members 113 are as follows: Fig.11 , Fig.12As shown, the side plates 112 are arranged near the outer periphery of the arc-shaped portion of the side plate 112 formed in a substantially semicircular shape. Thus, the pair of side plates 112 are connected to each other by a plurality of mounting members 113. Therefore, when the side plate 112 on one side connected to the drive shaft 125 is swung by the driving force transmitted from the servo motor 120, the force in the swinging direction is also transmitted to the other side plate 112, and the pair of side plates 112 are swung as one.

[0093] The storage unit support member 110 formed in this way supports the storage unit 100 . Fig.13 1 is a three-dimensional diagram of a storage unit. The storage unit 100 is formed in a cage-like shape by a treated workpiece holding wall 101 and a side wall 102. The side wall 102 is composed of a plate-like member arranged in parallel with the side plate 112 near the side plate 112 of the storage unit support member 110 when the storage unit 100 is supported by the storage unit support member 110, and is arranged in a pair with the side plate 112. The interval between the pair of side walls 102 is slightly narrower than the interval between the pair of side plates 112.

[0094] In addition, when the side wall 102 is supported by the storage unit support member 110, the width in the width direction X is the same as the side plate 112 of the storage unit support member 110, and increases from the opening 11 side of the chamber 10 toward the bottom 15 (see Figure 3 , Figure 4 ) side. In the present embodiment, the side wall 102 is formed in a substantially trapezoidal shape, and is arranged in such a direction that the longer side of the upper and lower bases of the trapezoid is located at the upper side when supported by the storage unit support member 110, and the shorter side is located at the lower side. Thus, the width of the side wall 102 in the width direction X decreases from the upper side toward the lower side.

[0095] Furthermore, the side wall 102 is extended upward at the portion located on the upper side of the upper and lower bases of the trapezoid and on the side with a longer length. That is, the side wall 102, when viewed from the length direction Y, is formed into a substantially pentagonal shape by adding a rectangle of the same length to the side with a longer length of the upper and lower bases of the trapezoid. Thus, the width of the side wall 102 in the width direction X decreases from the upper side toward the lower side.

[0096] The workpiece holding wall 101 is disposed between a pair of side walls 102 and is formed along the sides other than the upper sides of the pentagon of the outer periphery of the side wall 102. Thus, the receiving unit 100 is opened only in a portion on the side of the opening 11 of the chamber 10 in a state where the receiving unit 100 is supported by the receiving unit support member 110, and this portion is the opening 103 of the receiving unit 100. The receiving unit 100 is formed in a cage-like shape by forming the opening 103 in this way, and the workpiece W accommodated in the receiving unit 100 can be taken in and out from the opening 103. In addition, the opening 103 of the receiving unit 100 is sized to allow the support plate 50 of the plasma generating device 40 or the support plate 80 of the sputtering device 70 to enter when the plasma generating device 40 or the sputtering device 70 is disposed in the chamber 10.

[0097] In addition, the treated object holding wall 101 of the storage unit 100 is formed by a plate-shaped member having many holes, such as a punching plate. The storage unit 100 is formed by a member having many holes, and the treated object holding wall 101 has air permeability between the inside and the outside of the storage unit 100.

[0098] On the outer surface side of the treated part holding wall 101 of the receiving unit 100, there is arranged a mounting plate 104 used when the receiving unit 100 is supported by the receiving unit supporting member 110. A plurality of mounting plates 104 are arranged on the outer surface side of the treated part holding wall 101 with the thickness direction being the same direction as the thickness direction of the side wall 102. In the present embodiment, the mounting plates 104 are arranged at two locations between a pair of side walls 102. On the mounting plate 104, when viewed from the longitudinal direction Y, a notch (not shown) is formed at a position where the mounting member 113 of the receiving unit supporting member 110 is arranged, through which the mounting member 113 passes. Therefore, when the receiving unit 100 is supported by the receiving unit supporting member 110, the mounting member 113 of the receiving unit supporting member 110 is made to enter the notch formed in the mounting plate 104 of the receiving unit 100. Thus, the storage unit 100 is supported by the storage unit support member 110 in a state where the relative movement of the storage unit 100 with respect to the storage unit support member 110 in the direction in which the storage unit support member 110 swings can be restricted.

[0099] The surface treatment device 1a further includes a correction plate 130a disposed in at least one of the storage unit 100 and the plasma generation device 40 and the sputtering device 70 to limit the range of storing the workpiece W. In this embodiment, the correction plate 130a is attached to the plasma generation device 40 and the sputtering device 70 .

[0100] The correction plates 130a are arranged parallel to the side walls 102 of the storage unit 100 when the plasma generation device 40 is located in the chamber 10 where the storage unit 100 is arranged, and the pair of correction plates 130a are arranged between the pair of side walls 102. That is, the pair of correction plates 130a are arranged in a direction facing each other.

[0101] The pair of correction plates 130a each have a mounting portion 132, and the mounting portion 132 of the correction plate 130a mounted on the plasma generation device 40 is mounted on the lower surface of the holding member 58 of the plasma generation device 40. That is, the mounting portion 132 is located at the upper end of the correction plate 130a when the correction plate 130a is viewed in the width direction X, and the mounting portion 132 is formed in a plate-like shape with the thickness direction being the up-down direction Z. The correction plate 130a is mounted on the plasma generation device 40 by mounting the mounting portion 132 formed in this way on the lower surface of the holding member 58 of the plasma generation device 40. In addition, the correction plate 130a is mounted on the plasma generation device 40. Correction plate The pair of correction plates 130a are mounted on the holding member 58 of the plasma generation device 40, and the distance between the pair of correction plates 130a is approximately the same as the width of the support plate 50 of the plasma generation device 40 in the longitudinal direction Y. Specifically, the distance between the pair of correction plates 130a mounted on the plasma generation device 40 is approximately the same as the width of the gas introduction portion 57 of the plasma generation device 40 in the longitudinal direction Y.

[0102] In addition, the width of the correction plate 130a installed on the plasma generating device 40 in the width direction X is about the same size as the width of the support plate 50 of the plasma generating device 40 in the same direction. In addition, the height of the correction plate 130a in the vertical direction Z is a height that enables the correction plate 130a to be separated from the receiving unit 100 in the vertical direction Z (that is, the first opening and closing component 20 can be opened and closed) when the plasma generating device 40 is located in the chamber 10 where the receiving unit 100 is supported by the receiving unit support component 110. Furthermore, when the plasma generating device 40 is located in the chamber 10, a gap through which the workpiece W can pass is formed between the lower end position of the correction plate 130a in the vertical direction Z and the receiving unit 100. Therefore, when the plasma generating device 40 is located in the chamber 10, the workpiece W is accommodated in the gap formed by the two opposing correction plates 130a and the workpiece retaining wall 101. Fig. 9 The housing space R is shown. The housing space R is formed in a region where the plasma generation device 40 can irradiate plasma uniformly, that is, in a region where the surface treatment of the workpiece W is appropriately performed.

[0103] In addition, the pair of correction plates 130a installed in the sputtering device 70 also have the same size and positional relationship as the pair of correction plates 130a installed in the plasma generating device 40, and the workpiece W is accommodated in the sputtering device 70. Fig.10 The housing space R is shown. The housing space R is formed in a region where the sputtering device 70 can uniformly discharge ions discharged from the target 84 , that is, in a region where the surface treatment of the workpiece W is appropriately performed.

[0104] [1-5. Description of the swing state of the storage unit]

[0105] Fig.14 Yes means Fig.11 An explanatory diagram showing a state in which a storage unit and a storage unit supporting member are swinging. Fig.15 Yes means Fig.12 FIG. 1 is an explanatory diagram of the swinging state of the storage unit and the storage unit support member. Fig.14 , Fig.15 As shown, the correction plate 130a installed on the plasma generation device 40 and the correction plate 130a installed on the sputtering device 70 have substantially the same shape, and are arranged at substantially the same position in the chamber 10 when they are located in the chamber 10. In addition, the correction plate 130a is chamfered from the sides to the bottom edge in the width direction X so that when the housing unit 100 is swung integrally with the housing unit support member 110 around the swing axis 111, it does not abut against the housing unit 100.

[0106] The receiving unit 100 and the receiving unit supporting member 110 swing within the range of angle ±θa relative to the up-down direction Z with the swing axis 111 as the center. In addition, the swing angle range is set so that when the receiving unit 100 is swung, the treated part W accommodated in the receiving unit 100 does not fall from the receiving unit 100 into the chamber 10. That is, the angle θa is appropriately set according to the size of the treated part W and the weight of the treated part W. The value of θa is set to about 50°, for example. That is, the receiving unit 100 and the receiving unit supporting member 110 swing within the angle range of about 50° on both sides of the swing direction, and a total of about 100° from the neutral position of the receiving unit supporting member 110. The receiving unit supporting member 110 described here is a neutral position, which is a position in which the opening 103 of the receiving unit 100 is facing directly upward, that is, the upper side of the up-down direction Z when the receiving unit 100 is attached to the receiving unit supporting member 110.

[0107] In addition, the swing pattern showing how the storage unit 100 is swung over time is provided by supplying the servo motor 120 (see Fig. 9 , Fig.10) is arbitrarily set as a voltage waveform applied. A sine waveform can be cited as a representative voltage waveform, but it is not limited to this. The details are described in the second embodiment.

[0108] In addition, Fig.14 , Fig.15 In FIG. 1 , an example in which the storage unit 100 is swung along the width direction X is shown, but the storage unit 100 may also be swung along the length direction Y. FIG.

[0109] The receiving unit 100 is swung to stir the workpiece W received in the receiving unit 100. Thus, the workpiece W surface-treated by the plasma generating device 40 is irradiated with plasma uniformly over the entire surface of the workpiece W, so that uniform surface treatment can be performed. In addition, the workpiece W surface-treated by the sputtering device 70 is irradiated with plasma from the target 84 (see FIG. 1 ). Figure 7 ) releases ions to form a uniform film.

[0110] As described above, the method of stirring the treated material W is not limited to the method of swinging the treated material W in the θ direction. That is, the treated material W may be stirred by swinging (vibrating) the storage unit 100 in the vertical direction Z.

[0111] Next, use Fig.16 , the bottom shape of the storage unit 100 is described. Fig.16 1 is a front view and a side view showing an example of the shape of the storage unit. The shape of the side wall 102 of the storage unit 100 is as described above, and the width of the storage unit 100 in the width direction X decreases as it approaches the bottom 15 of the chamber 10 from the opening 103 of the storage unit 100. Specifically, it can also be as follows Fig.16 As shown in (a), a storage unit 100a is provided with an arc-shaped side wall 102a. Fig.16 As shown in (b), a storage unit 100b may be provided with a U-shaped side wall 102b. Fig.16 As shown in (c), a storage unit 100c is provided with a polygonal side wall 102c.

[0112] Whether Fig.16The side walls 102a, 102b, 102c shown are narrower the closer to the bottom of the receiving unit 100a, 100b, 100c, so when the receiving unit is swung, the treated parts W contained in the inside and in the position connected to the ends of the side walls 102a, 102b, 102c are easily moved along the ends of the side walls 102a, 102b, 102c. And by moving the treated parts W in the position connected to the ends of the side walls 102a, 102b, 102c, the treated parts W contained in the upper layer are also easily moved. That is, the treated parts W are easily stirred. Therefore, the plasma irradiated from the plasma generating device 40 is uniformly irradiated to the surface of the treated parts W. In addition, the ions emitted from the sputtering device 70 are uniformly irradiated to the surface of the treated parts W.

[0113] [1-6. Description of the structure of the pump unit]

[0114] Fig.17 yes Figure 1 Detailed view of the pump unit shown. Fig.18 Yes Fig.17 Detailed view of the lifting shaft and turbine jack top viewed from the F-F direction. Fig.19 yes Fig.17 Schematic cross-section of . Fig. 20 Yes means Fig.19 The illustrated diagram is a diagram of a lift valve in a state where the opening is opened.

[0115] The pump unit 140 mounted on the bottom 15 of the chamber 10 includes a flow control valve 150 and a turbomolecular pump 170. The flow control valve 150 is as shown in FIG. Fig.19 As shown, the flow control valve 150 includes a flow path 151 through which a fluid flows, a lift valve 153 that opens and closes an opening 152 formed at one end of the flow path 151, and a servo actuator 160 that is a drive mechanism for opening and closing the lift valve 153. In addition, the turbomolecular pump 170 is a pump that sucks the fluid flowing in the flow path 151 of the flow control valve 150.

[0116] In detail, the flow path portion 151 of the flow control valve 150 is formed on the mounting flange 141 for mounting the pump unit 140 to the chamber 10, and the turbomolecular pump 170 is mounted on the mounting flange 141 through the pump flange 171 of the turbomolecular pump 170. The mounting flange 141 is a plate-shaped member, and the flow path portion 151 is formed as a hole that penetrates the mounting flange 141 in the thickness direction. The opening portion 152 of the flow path portion 151 is located at one end side of the flow path portion 151 that penetrates the mounting flange 141, and the turbomolecular pump 170 is mounted on the surface of the flow path portion 151 of the mounting flange 141 on the opposite side of the surface on the side where the opening portion 152 is located. Therefore, the turbomolecular pump 170 is arranged on the opposite side of the end of the flow path portion 151 on the side where the opening portion 152 is formed.

[0117] The pump unit 140 is installed in the chamber 10 by mounting the mounting flange 141 on the lower surface of the bottom 15 of the chamber 10. The mounting flange 141 is mounted in an orientation such that the surface of the flow path portion 151 on the side where the opening 152 is located is located on the chamber 10 side, and the surface on the side where the servo molecular pump 170 is mounted is located on the opposite side of the chamber 10. Thus, the mounting flange 141 is mounted in an orientation such that the flow direction of the fluid when flowing in the flow path portion 151 is the up-down direction Z, and the opening 152 is located at the upper end of the flow path portion 151. In other words, the flow path portion 151 is arranged in an orientation such that the opening direction of the opening 152 is the up-down direction Z. In a state where the mounting flange 141 is mounted on the bottom 15 of the chamber 10, the opening 152 of the flow path portion 151 is open to the inside of the chamber 10, and the flow path portion 151 is connected to the inside of the chamber 10.

[0118] The lift valve 153 of the flow control valve 150 is arranged in the chamber 10, and is arranged on the opening 152 side of the flow path 151, that is, on the upper side of the opening 152. The lift valve 153 is spaced apart from the opening 152 by a distance d in the vertical direction Z (see Fig.24 ) changes to open and close the opening 152. That is, when closing the opening 152, the lift valve 153 can be closed by covering the entire area of ​​the opening 152, and when opening the opening 152, the opening 152 can be opened by moving away from the opening 152 to the opening direction of the opening 152, that is, in the up-down direction Z. The shapes of these openings 152 and lift valve 153 when viewed from the opening direction of the opening 152 are both roughly circular, and the lift valve 153 has a larger diameter than the opening 152. In addition, the roughly circular shape in this case means that it is substantially formed by a circular shape regardless of the dimensional error during manufacturing and the presence or absence of slight concavities and convexities.

[0119] The servo actuator 160 that opens and closes the lift valve 153 moves the lift valve 153 in the opening direction of the opening 152, that is, in the up-down direction Z, thereby opening and closing the opening 152 relative to the lift valve 153. The servo actuator 160 is arranged on the surface side of the mounting flange 141 on which the turbomolecular pump 170 is mounted, and is supported by the drive mechanism support portion 143. That is, the servo actuator 160 is mounted on the mounting flange 141 via the drive mechanism support portion 143.

[0120] The driving force generated by the servo actuator 160 is transmitted to the lift valve 153 via the turbine jack 161, the lift shaft 162, and the connecting member 163. And the lift valve 153 moves in the vertical direction Z by the transmitted driving force, and opens and closes the opening 152. Among them, the turbine jack 161 moves the lift shaft 162 in the axial direction of the lift shaft 162 by the driving force transmitted from the servo actuator 160. The lift shaft 162 is arranged in a direction along the vertical direction Z in the axial direction. Therefore, when the driving force from the servo actuator 160 is transmitted from the turbine jack 161, the lift shaft 162 moves in the vertical direction Z by the driving force. The lift shaft 162 is arranged to penetrate the bottom 15 of the chamber 10 and the mounting flange 141, and the upper end is located in the chamber 10, and the lower end is located on the lower side of the mounting flange 141 outside the chamber 10.

[0121] The portion of the lifting shaft 162 that passes through the mounting flange 141 is airtight so that the fluid does not flow on both sides of the portion that passes through the mounting flange 141. The lifting shaft 162 passes through the bottom 15 of the chamber 10.

[0122] The turbine jack 161 is connected to a position near the lower end of the lifting shaft 162 , and transmits the driving force transmitted from the servo actuator 160 to the lifting shaft 162 from the position near the lower end of the lifting shaft 162 to move the lifting shaft 162 in the vertical direction Z.

[0123] The connection member 163 is disposed in the chamber 10, and connects the upper end of the lifting shaft 162 to the lifting valve 153. That is, the connection member 163 is disposed between the surface of the lifting valve 153 on the opposite side of the surface that opens and closes the opening 152 of the flow path 151 and the upper end of the lifting shaft 162, and is connected to both, thereby connecting the upper end of the lifting shaft 162 to the lifting valve 153. Thus, when the lifting shaft 162 moves in the up-down direction Z, the connection member 163 moves in the up-down direction Z together with the lifting shaft 162, and the lifting valve 153 also moves in the up-down direction Z. The lifting valve 153 opens and closes the opening 152 of the flow path 151 by moving in the up-down direction Z under the action of the driving force transmitted from the servo actuator 160.

[0124] The chamber 10 is provided with a valve guide 165 for guiding the opening and closing operation of the lift valve 153, and a guide engaging portion 166 engaging with the valve guide 165 is mounted on the lift valve 153. The valve guide 165 is formed in a rod-like shape extending in the up-down direction Z, which is the direction in which the lift valve 153 moves during the opening and closing operation, and is arranged near the portion of the inner surface of the bottom 15 of the chamber 10 where the lift valve 153 is located.

[0125] Specifically, the valve guide 165 is arranged on the opposite side of the lift valve 153 to the side where the lift shaft 162 is located. The guide engaging portion 166 is mounted on the upper surface side of the lift valve 153 and is formed to span from the upper surface of the lift valve 153 to the position of the valve guide 165. The guide engaging portion 166 has a through hole through which the valve guide 165 passes, and the valve guide 165 penetrates the through hole formed on the guide engaging portion 166.

[0126] Since the guide engaging portion 166 is mounted on the lift valve 153, when the lift valve 153 moves, the guide engaging portion 166 also moves integrally. At this time, since the valve guide 165 extending in the vertical direction Z passes through the through hole formed on the guide engaging portion 166, when the guide engaging portion 166 moves together with the lift valve 153, the guide engaging portion 166 moves along the valve guide 165. Thus, the valve guide 165 guides the vertical direction Z movement of the lift valve 153 to which the guide engaging portion 166 is mounted.

[0127] The lift valve 153 opens and closes the opening 152 of the flow path 151 by moving in the up-down direction Z. When the lift valve 153 opens the opening 152 , the fluid flows between the chamber 10 and the flow path 151 from the portion between the outer periphery of the lift valve 153 and the mounting flange 141 .

[0128] That is, when the lift valve 153 closes the opening 152, the lower surface of the lift valve 153 contacts the upper surface of the mounting flange 141, so that the lift valve 153 closes the opening 152. In this case, the path of the fluid between the chamber 10 and the flow path 151 is blocked by the contact portion between the lower surface of the lift valve 153 and the upper surface of the mounting flange 141. In addition, when the lift valve 153 opens the opening 152, the lower surface of the lift valve 153 moves downward, so that the lower surface of the lift valve 153 is separated from the upper surface of the mounting flange 141. As a result, between the chamber 10 and the flow path 151, the fluid flows from the portion between the lower surface of the lift valve 153 and the lower surface of the mounting flange 141, between the chamber 10 and the flow path 151, and flows to the outside of the chamber 10.

[0129] Therefore, when the lift valve 153 opens the opening 152, the actual opening of the path of the fluid flowing between the chamber 10 and the flow path 151 is the portion between the outer peripheral portion of the lower surface of the lift valve 153 and the upper surface of the mounting flange 141. That is, the distance between the lower surface of the lift valve 153 and the upper surface of the mounting flange 141 changes by moving the lift valve 153 in the up-down direction Z. Therefore, the opening formed between the outer peripheral portion of the lower surface of the lift valve 153 and the upper surface of the mounting flange 141 serves as the regulating opening 155 (see Fig. 20 ) to perform its function.

[0130] The adjustment opening 155 is an opening when the fluid flows between the chamber 10 and the opening 152, and the opening area of ​​the adjustment opening 155 is a flow area DA (not shown) when the fluid flows between the chamber 10 and the opening 152. The flow area DA of the adjustment opening 155 is a value calculated by multiplying the length of the outer peripheral portion of the lower surface of the lift valve 153 by the distance between the lower surface of the lift valve 153 and the upper surface of the mounting flange 141. That is, the flow area DA changes according to the distance between the lift valve 153 and the mounting flange 141. That is, the flow area DA increases as the distance between the lift valve 153 and the mounting flange 141, that is, the distance d between the opening 152 of the flow path 151 and the lift valve 153 increases, and decreases as the distance d between the opening 152 and the lift valve 153 decreases. Therefore, the lift valve 153 changes the distance d between the lift valve 153 and the opening 152 in the opening direction of the opening 152 , thereby changing the flow area DA with respect to the opening 152 .

[0131] The lift valve 153 that can change the flow area DA is moved in the vertical direction Z by the servo actuator 160. The servo actuator 160 moves the lift valve 153 in the vertical direction Z based on a predetermined detection value. Specifically, the servo actuator 160 is based on the vacuum gauge 180 (see Figure 1 ) moves the lift valve 153. Thus, the servo actuator 160 changes the flow area DA based on the pressure in the chamber 10 detected by the vacuum gauge 180.

[0132] [1-7. Description of the Function of the First Embodiment]

[0133] The following describes the function of the surface treatment device 1a according to the present embodiment. The surface treatment device 1a according to the present embodiment performs surface treatment on a workpiece W made of a difficult-to-plate material such as a resin material, which is difficult to plate by conventional plating treatment, so that a plated layer can be easily formed on the surface by plating treatment. Figure 1 As shown, relatively small parts are assumed, and the surface treatment device 1a is suitable for performing surface treatment on a plurality of relatively small-sized workpieces W at a time.

[0134] In addition, the workpiece W to be surface-treated by the surface treatment device 1a is a part that is larger than the many holes formed on the workpiece retaining wall 101 of the storage unit 100 and does not pass through the holes formed on the workpiece retaining wall 101 of the storage unit 100.

[0135] Fig.21 1 is a flowchart showing the sequence of surface treatment of a workpiece by a surface treatment device according to the embodiment. When the surface treatment device 1a performs surface treatment on the workpiece W, first, the workpiece W is received in the receiving unit 100 (step ST11). That is, the workpiece W is received in the receiving unit 100 from the opening 103 of the receiving unit 100.

[0136] Next, the receiving unit 100 containing the processed object W is placed in the chamber 10 (step ST12). The receiving unit 100 is placed in the chamber 10 by attaching the receiving unit 100 containing the processed object W to the receiving unit support member 110 in the chamber 10. That is, in a state where both the first opening and closing member 20 and the second opening and closing member 30 are opened, the receiving unit 100 containing the processed object W is placed in the chamber 10 and the receiving unit 100 is attached to the receiving unit support member 110. Thus, the processed object W is placed in the chamber 10.

[0137] Once the workpiece W is received in the chamber 10, the first opening and closing member 20 is rotated about the hinge 21, and the first opening and closing member 20 is opened. 1st The opening and closing member 20 closes the opening 11 of the chamber 10 (step ST13). 1st A portion of the plasma generating device 40 of the opening and closing member 20 is located in the chamber 10 (see Figure 3 , Fig. 9 In this case, at least the plate-shaped conductors 51 and 52 supported by the support plate 50 of the plasma generating device 40 are located in the chamber 10, and the plate-shaped conductors 51 and 52 are placed into the receiving unit 100 from the opening 103 of the receiving unit 100 disposed in the chamber 10. Thus, the plate-shaped conductors 51 and 52 of the plasma generating device 40 are located above the treated workpiece W received in the receiving unit 100 and at a position close to the treated workpiece W.

[0138] A pair of correction plates 130a are mounted on the plasma generating device 40 to limit the range in which the workpiece W is accommodated. Since the correction plates 130a are arranged below the plate-shaped conductors 51 and 52 of the plasma generating device 40, when the plate-shaped conductors 51 and 52 are placed in a state where they are inserted into the accommodation unit 100 from the opening 103 of the accommodation unit 100, the correction plates 130a also enter the accommodation unit 100. As a result, the workpiece W accommodated in the accommodation unit 100 is located between the pair of correction plates 130a in the accommodation unit 100.

[0139] The housing unit 100 housing the workpiece W is arranged in the chamber 10, and once the first opening and closing member 20 is closed so that the plasma generating device 40 is located in the chamber 10, the pressure in the chamber 10 is reduced by the pump unit 140 (step ST14). At this time, the path of the gas inlet 16 through which the gas used for sputtering flows into the chamber 10 is closed so that the gas does not flow in from the gas inlet 16. In addition, when the pressure in the chamber 10 is reduced by the pump unit 140, the turbomolecular pump 170 is operated to suck the gas in the chamber 10 and discharge the sucked gas to the outside of the chamber 10. In addition, the pump unit 140 adjusts the flow rate of the gas flowing from the chamber 10 to the turbomolecular pump 170 side by operating the flow regulating valve 150 in the state where the gas in the chamber 10 is sucked by the turbomolecular pump 170. In this way, the pressure in the chamber 10 can be adjusted.

[0140] More specifically, the pump unit 140 moves the lift valve 153 in the up-down direction Z based on the pressure in the chamber 10 detected by the vacuum gauge 180, adjusts the flow area DA of the adjustment opening 155, and adjusts the flow rate of the gas flowing from the chamber 10 to the flow path 151 side, thereby reducing the pressure in the chamber 10 to a predetermined set pressure. In addition, the set pressure in this case is set to a pressure suitable for generating plasma by the plasma generating device 40 and performing surface treatment of the workpiece W, for example, a pressure of about 10Pa to 300Pa. The pump unit 140 changes the state of the chamber 10 from a low vacuum to a medium vacuum by adjusting the pressure in the chamber 10 to a pressure of about 10Pa to 300Pa according to the set pressure.

[0141] After the pressure in the chamber 10 is reduced to the set pressure, the surface treatment device 1a starts the swinging of the storage unit 100 (step ST15). The swinging of the storage unit 100 is performed by driving the servo motor 120, which is a swinging mechanism for swinging the storage unit 100. When the servo motor 120 is driven, the driving force generated by the servo motor 120 is transmitted to the storage unit support member 110 from the output shaft 121 of the servo motor 120 via the drive shaft 125. The storage unit support member 110 to which the driving force from the servo motor 120 is transmitted is connected by the drive shaft 125 and the support shaft 116 (see Fig. 9 ) is swung around the swing shaft 111 of the storage unit support member 110. As a result, the storage unit 100 supported by the storage unit support member 110 is swung together with the storage unit support member 110.

[0142] If the receiving unit 100 swings, an inertial force generated by the swinging of the receiving unit 100 acts on the treated pieces W received in the receiving unit 100. The treated pieces W received in the receiving unit 100 move in the receiving unit 100 due to the inertial force, or the treated pieces W collide with each other and are turned over.

[0143] In addition, when the storage unit 100 is swung by the driving force generated by the servo motor 120, it is preferable to also include an action of rapidly changing the speed or acceleration. By rapidly changing the swing speed or acceleration of the storage unit 100, the workpiece W is made to move more easily in the storage unit 100. In addition, the workpiece W is made to turn over more easily in the storage unit 100.

[0144] After the storage unit 100 starts to swing, the surface treatment device 1a performs surface modification on the workpiece W using the plasma generation device 40 (step ST16). While the surface modification is performed using the plasma generation device 40, the gas introduction portion 57 (see Figure 5 , Figure 6 ) supplies plasma generating gas, while the parallel plate-shaped conductor parts 51 and 52 (refer to Figure 5 , Figure 6) is set to a high-frequency discharge state to generate plasma. Plasma generating gas is supplied to the gas inlet 57 by supplying the plasma generating gas from the gas supply part 44 to the gas flow path 42 and discharging the plasma generating gas from the gas supply hole 43 formed on one end side of the gas flow path 42 to the gas inlet 57. In addition, when the gap 56 between the plate-shaped conductor parts 51 and 52 is set to a high-frequency discharge state, it is performed by operating the high-frequency power supply 61. Since the plasma generating gas supplied to the gas inlet 57 flows to the gap 56 through the through hole 54 formed on the plate-shaped conductor part 52, the plasma generating gas flowing to the gap 56 is plasmatized in the gap 56 in the high-frequency discharge state. At this time, since the pressure inside the chamber 10 is reduced to a pressure suitable for generating plasma, plasma is efficiently generated in the gap 56 by setting the gap 56 to a high-frequency discharge state while the plasma generating gas flows to the gap 56.

[0145] The plasma generated in the gap 56 flows out of the gap 56 toward the side opposite to the side where the plate-shaped conductor 52 is located through the through hole 53 formed in the plate-shaped conductor 51. That is, the plasma generated in the gap 56 flows out toward the lower side in the vertical direction Z through the through hole 53 of the plate-shaped conductor 51.

[0146] At this time, the diameter of the through hole 53 of the plate-shaped conductor part 51 is smaller than the diameter of the through hole 54 formed in the plate-shaped conductor part 52. Therefore, the plasma gas as a gas plasmatized in the gap part 56 flows out from the through hole 53 to the lower side in the vertical direction Z at a relatively fast flow rate. Since the workpiece W accommodated in the accommodation unit 100 is located at the lower side of the plate-shaped conductor part 51 in the vertical direction Z, the plasma gas flowing out from the through hole 53 of the plate-shaped conductor part 51 is irradiated to the workpiece W accommodated in the accommodation unit 100. The surface of the workpiece W is modified by the plasma generated by the plasma generating device 40 in this way. That is, the surface of the workpiece W is treated by the irradiated plasma.

[0147] One example of surface modification by plasma is, specifically, surface roughening of the surface of the workpiece W by ions in the plasma gas colliding with the workpiece W. In addition, other examples of surface modification by plasma include cleaning of the surface of the workpiece W by plasma, generation of hydrophilic functional groups on the surface of the workpiece W by plasma, and the like.

[0148] In addition, since the plasma generating device 40 is provided with a pair of correction plates 130a for limiting the range for accommodating the workpiece W, the plasma gas flowing out from the through hole 53 of the plate-shaped conductor portion 51 flows between the pair of correction plates 130a. Since the workpiece W is accommodated between the pair of correction plates 130a, the plasma gas flows between the pair of correction plates 130a, and the workpiece W is completely covered by the plasma gas. Therefore, the surface of the workpiece W can be efficiently treated by the plasma gas.

[0149] Furthermore, since the receiving unit 100 swings during the plasma gas spraying, the plasma gas reaches the entire surface of the treated workpiece W as the treated workpiece W moves or turns inside the receiving unit 100. That is, the entire surface of the treated workpiece W accommodated in the receiving unit 100 is exposed to the plasma without omission as the receiving unit 100 swings. Thus, even when the treated workpiece W has a complex shape, the surface treatment is performed on the entire surface of the treated workpiece W with a complex shape without omission.

[0150] Furthermore, when the surface modification by the plasma generation device 40 is performed for a predetermined time, the surface treatment apparatus 1 a stops the generation of plasma by the plasma generation device 40 .

[0151] Then, the surface treatment device 1a stops the driving of the servo motor 120 to end the swinging of the storage unit 100 (step ST17). Fig.11 Stop in the indicated state.

[0152] Once the generation of plasma in the plasma generating device 40 stops and the storage unit supporting member 110 also stops, the surface treatment device 1a sets the pressure in the chamber 10 to the same level as the atmospheric pressure (step ST18). When the pressure in the chamber 10 is set to the same level as the atmospheric pressure, the pump unit 140 is stopped and the pressure regulating valve (not shown) provided in the chamber 10 is opened to take the surrounding air of the chamber 10 into the chamber 10. Thus, the pressure in the chamber 10 after decompression is increased to the same level as the atmospheric pressure.

[0153] Once the pressure in the chamber 10 is set to the same magnitude as the atmospheric pressure, the first opening and closing member 20 is opened and the second opening and closing member 30 is closed (step ST19). Since the force in the chamber 10 is substantially the same magnitude as the atmospheric pressure outside the chamber 10, the first opening and closing member 20 can be easily opened by rotating around the hinge 21. Once the first opening and closing member 20 is opened, the second opening and closing member 30 installed at a position different from the first opening and closing member 20 near the opening 11 of the chamber 10 is closed.

[0154] When the second opening and closing member 30 is closed, the second opening and closing member 30 is rotated about the hinge 31 in the same manner as the first opening and closing member 20, so that the opening 11 of the chamber 10 is closed by the second opening and closing member 30. As a result, a part of the sputtering device 70 mounted on the second opening and closing member 30 is located in the chamber 10 (see Figure 4 , Fig.10 In this case, at least the target 84 supported by the support plate 80 of the sputtering device 70 is located in the chamber 10, and the target 84 enters the receiving unit 100 from the opening 103 of the receiving unit 100 disposed in the chamber 10. As a result, the target 84 of the sputtering device 70 is located above the workpiece W accommodated in the receiving unit 100 and closer to the workpiece W.

[0155] The sputtering device 70 is provided with a pair of correction plates 130a for limiting the range in which the workpiece W is arranged. The correction plates 130a are arranged below the target 84 of the sputtering device 70, so that when the target 84 is brought into the housing unit 100 from the opening 103 of the housing unit 100, the correction plates 130a also enter the housing unit 100. Thus, the workpiece W accommodated in the housing unit 100 is located between the pair of correction plates 130a in the housing unit 100.

[0156] When the second opening and closing member 30 is closed and the sputtering device 70 is located in the chamber 10, the pressure in the chamber 10 is reduced by the pump unit 140 (step ST20). The pressure in the chamber 10 is reduced in the same manner as described in step ST14.

[0157] After the chamber 10 is pressurized to the set pressure, the surface treatment apparatus 1a starts swinging the storage unit 100 (step ST21). The swinging of the storage unit 100 is performed in the same manner as the operation described in the above step ST15.

[0158] If the receiving unit 100 is swung, an inertial force generated by the reciprocating swing of the receiving unit 100 in the swinging direction acts on the treated pieces W received in the receiving unit 100. The treated pieces W received in the receiving unit 100 are moved in the receiving unit 100 by the inertial force, or the treated pieces W collide with each other and are turned over.

[0159] After the housing unit 100 starts to swing, the surface treatment device 1a performs sputtering on the workpiece W through the sputtering device 70 (step ST22). When the sputtering device 70 performs sputtering, the gas for sputtering flows into the chamber 10 from the gas inlet 16 disposed in the chamber 10. In addition, the gas flowing in from the gas inlet 16 is ionized by the magnetic field generated by the magnet 81 of the sputtering device 70, and the atoms of the target 84 are ejected by causing the ions to collide with the target 84. Since the pressure in the chamber 10 is reduced to a pressure suitable for sputtering by the pump unit 140, the gas for sputtering flows into the chamber 10 from the gas inlet 16 while the magnetic field is generated by the magnet 81, and the gas flowing in from the gas inlet 16 is efficiently ionized near the target 84 of the sputtering device 70.

[0160] In the present embodiment, since copper is used in the target 84, when the ions of the gas ionized near the target 84 collide with the target 84, the target 84 ejects copper atoms. The atoms ejected from the target 84 are directed toward the lower side opposite to the side where the magnet 81 is located in the vertical direction Z. Since the workpiece W accommodated in the accommodation unit 100 is located on the lower side of the target 84 in the vertical direction Z, the atoms ejected from the target 84 move toward the workpiece W accommodated in the accommodation unit 100 and come into close contact with the workpiece W, and are deposited on the surface of the workpiece W. As a result, a thin film is formed on the surface of the workpiece W by the material forming the target 84. In the case of the present embodiment, a thin film of copper is formed on the surface of the workpiece W.

[0161] At this time, since the surface of the workpiece W is surface-modified by the plasma generating device 40, the adhesion of the thin film to the surface of the workpiece W can be improved when the sputtering device 70 forms a film on the surface of the workpiece W using the material forming the target 84. That is, since the sputtering device 70 forms a film on the surface of the workpiece W after the surface modification by sputtering, the thin film can be formed on the surface of the workpiece W with high adhesion. In addition, since the formed thin film is subjected to plating processing on the surface of the workpiece W by other devices in a later process, the plating layer is easy to be adhered.

[0162] In addition, since a pair of correction plates 130a are installed in the sputtering device 70 to limit the range of accommodating the workpiece W, the atoms ejected from the target 84 flow between the pair of correction plates 130a. Since the workpiece W is accommodated between the pair of correction plates 130a, the atoms ejected from the target 84 pass through the pair of correction plates 130a to cover the workpiece W without omission. Therefore, a thin film can be uniformly formed on the surface of the workpiece W without omission.

[0163] The atoms ejected from the target 84 and attached to the surface of the workpiece W by sputtering using the sputtering device 70 are brought into close contact with the entire surface of each workpiece W by the workpiece W being moved or turned over in the housing unit 100 due to the swinging of the housing unit 100. That is, the workpiece W accommodated in the housing unit 100 is swung by the housing unit 100, so that the atoms ejected from the target 84 are brought into close contact with the entire surface of the workpiece W without omission, and a thin film formed by the accumulation of the material forming the target 84 is uniformly formed on the entire surface of the workpiece W. Thus, even when the workpiece W has a complicated shape, a thin film can be formed without omission on the entire surface of the workpiece W having a complicated shape.

[0164] When the sputtering by the sputtering device 70 is performed for a predetermined time, the surface treatment apparatus 1 a stops the sputtering by the sputtering device 70 .

[0165] Then, the surface treatment device 1a stops the driving of the servo motor 120 to end the swinging of the storage unit 100 (step ST23). Fig.12 Stop in the indicated state.

[0166] Once the sputtering device 70 stops and the storage unit support member 110 also stops, the surface treatment device 1a sets the pressure in the chamber 10 to the same level as the atmospheric pressure (step ST24). When the pressure in the chamber 10 is set to the same level as the atmospheric pressure, the pump unit 140 is stopped and a pressure regulating valve (not shown) provided in the chamber 10 is opened to take the surrounding air of the chamber 10 into the chamber 10. Thus, the pressure in the chamber 10 that has been depressurized is increased to make the pressure in the chamber 10 the same level as the atmospheric pressure.

[0167] Once the pressure in the chamber 10 is made equal to the atmospheric pressure, the second opening and closing member 30 is opened and the receiving unit 100 is taken out (step ST25). Since the pressure in the chamber 10 is approximately equal to the atmospheric pressure outside the chamber 10, the second opening and closing member 30 can be easily opened by rotating around the hinge 31. Once the second opening and closing member 30 is opened, the receiving unit 100 accommodated in the chamber 10 is taken out of the chamber 10 from the opening 11 of the chamber 10. Through the above series of treatments, by performing sputtering by the sputtering device 70 after surface modification by the plasma generating device 40, a thin film to be treated W with a high degree of adhesion of the coating can be obtained when the coating treatment is performed in the subsequent process.

[0168] The workpiece W with a thin film formed on the surface is subjected to a plating treatment in a post-process. The plating treatment is performed by, for example, electrolytic plating, electroless plating, molten metal plating, etc. Since these plating treatments are performed on the workpiece W with a thin film formed by the above-mentioned series of surface treatments, a metal thin film (plating) covering the surface can be formed with a high degree of adhesion on the thin film formed on the surface of the workpiece W.

[0169] As described above, the surface treatment device 1a of the first embodiment stirs the treated workpiece W accommodated in the accommodation unit 100 by swinging the accommodation unit 100 by the servo motor 120 (stirring mechanism) when the plasma generating device 40 or the sputtering device 70 (both are surface treatment mechanisms) performs surface treatment on the treated workpiece W. Therefore, even if the treated workpiece W accommodated in the accommodation unit 100 is a small three-dimensional part, the surface can be uniformly treated on the entire surface.

[0170] Furthermore, in the surface treatment device 1a of the first embodiment, the servo motor 120 (stirring mechanism) causes the storage unit 100 to swing around the swing shaft 111. Therefore, the workpiece W stored in the storage unit 100 is stirred, so even if the workpiece W is a small three-dimensional part, the entire surface can be uniformly treated.

[0171] In the surface treatment device 1a of the first embodiment, the receiving unit 100 is disposed below the plasma generating device 40 or the sputtering device 70 (both are surface treatment mechanisms). Furthermore, the servo motor 120 (stirring mechanism) causes the receiving unit 100 to swing around the swing shaft 111 that penetrates in a direction parallel to these surface treatment mechanisms. Thus, the workpiece W received in the receiving unit 100 is stirred, so that the surface of the workpiece W can be uniformly treated as a whole.

[0172] In addition, since the plasma generating device 40 and the sputtering device 70 are independently located outside the housing unit 100, the surface treatment device 1a can perform different surface treatments on the workpiece W by switching between the plasma generating device 40 and the sputtering device 70. In addition, the design freedom of the housing unit 100 is improved. Furthermore, since the plasma generating device 40 is independently located outside the housing unit 100, for example, the wiring structure of the electrode (a pair of plate-shaped conductor portions 51, 52) constituting the plasma generating device 40 becomes simple, thereby improving the design freedom of the electrode.

[0173] In addition, in the surface treatment device 1a of the first embodiment, the containing unit 100 has a shape that becomes narrower as it approaches the bottom. Therefore, when the containing unit 100 containing the workpiece W is swung, the workpiece W can easily move along the end of the side wall 102 (102a, 102b, 102c). That is, the workpiece W can be easily stirred. Therefore, the surface of the workpiece W can be uniformly irradiated with the plasma irradiated from the plasma generating device 40. In addition, the atoms emitted from the target 84 of the sputtering device 70 can be uniformly irradiated on the surface of the workpiece W. Thus, the surface of the workpiece W can be uniformly treated.

[0174] In the surface treatment device 1a of the first embodiment, the surface treatment mechanism is a plasma generating device 40 that performs surface treatment on the workpiece W accommodated in the accommodation unit 100 by irradiating the workpiece W with plasma. Therefore, the surface modification (surface treatment) of the workpiece W using plasma can be reliably performed.

[0175] In the surface treatment device 1a of the first embodiment, the surface treatment mechanism is the sputtering device 70 that sputters the workpiece W accommodated in the accommodation unit 100. Therefore, the workpiece W can be sputtered reliably.

[0176] In addition, although no specific form is shown, the receiving unit 100 and the plasma generating device 40 may be swung integrally. In addition, the receiving unit 100 and the sputtering device 70 may be swung integrally. Specifically, when the first opening and closing member 20 is closed, the plasma generating device 40 and the receiving unit 100 are engaged and integrated to be swung around the swing axis. At this time, by forming the support member 46 and the gas supply pipe 41 and the gas flow path 42 formed therein with a flexible material, a high degree of freedom of swinging can be achieved.

[0177] In addition, when the second opening and closing member 30 is closed, the sputtering device 70 and the receiving unit 100 are engaged and integrated to swing around the swing axis. At this time, the cooling water pipe 71 and the cooling water channel 72 and the supporting member 76 formed therein are formed of flexible materials, so that a high degree of freedom of swinging can be achieved.

[0178] In this way, by swinging the receiving unit 100 and the surface treatment mechanism integrally, the receiving unit 100 can be swung while the workpiece W always remains within the treatment range of the surface treatment mechanism, so that the surface treatment and stirring of the workpiece W can be performed more efficiently.

[0179] [2. Modification of the first embodiment]

[0180] The shape of the storage unit 100 is not limited to Fig.13 and Fig.16 Shape shown. Fig. 22 This is a three-dimensional diagram of another form of a containment unit. Fig.23 yes Fig. 22 A top view and a side view of the containment unit.

[0181] like Fig. 22 As shown, the receiving unit 100d is located relative to the side wall 102 (refer to Fig.13 ) is different in that it has an inclined side wall 102d such that the area of ​​the portion for accommodating the processed workpiece W gradually decreases toward the bottom of the accommodating unit 100d.

[0182] like Fig.23 As shown in (b), the side wall 102d includes a vertical side wall 102e and a side wall 102f inclined toward the bottom of the receiving unit 100d. In addition, the side wall 102d is provided at both end sides of the receiving unit 100d in the Y-axis direction. Furthermore, the side walls 102d at both end sides of the receiving unit 100d have the same shape. That is, the width H of the side wall 102d along the Y-axis decreases from the upper side to the lower side of the receiving unit 100d. The side wall 102d is formed by, for example, a member having many holes, such as a punching plate. In addition, the inclination of the side wall 102d, i.e. Fig.23 The angle ω shown in (b) is set to about 30° to 80°.

[0183] By using the storage unit 100d having such a shape, when the storage unit 100d is swung, stirring of the workpiece W is further promoted. In particular, by using the storage unit 100d, the effect of reversing the front and back sides of the workpiece W is greater.

[0184] Furthermore, the side wall 122d is as Fig.23As shown in (b), the width H along the Y axis at the bottom of the storage unit 100d is formed to be substantially equal to the effective range for more efficiently performing surface treatment when the plasma generation device 40 and the sputtering device 70 as the surface treatment mechanism perform surface treatment. That is, the side wall 102d has an inclination outside the above-mentioned effective range in the area where the lower bottom of the storage unit 100d faces the plasma generation device 40 and the sputtering device 70 (surface treatment mechanism).

[0185] As described above, in the surface treatment device 1a of the modified example of the first embodiment, the side wall 102d on the swing shaft 111 side of the receiving unit 100d is formed so that the area of ​​the portion receiving the treated workpiece W becomes smaller as it is closer to the bottom of the receiving unit 100d. Therefore, the stirring of the treated workpiece W is further promoted, so that the plasma generating device 40 and the sputtering device 70 can be opposed to each other without any omission on the surface of the treated workpiece W. Thus, the surface of the treated workpiece W can be treated more uniformly.

[0186] In addition, in the surface treatment device 1a of the modified example of the first embodiment, the side wall 102d is inclined outside the effective range for efficiently performing surface treatment in the area where the lower bottom of the storage unit 100d is opposite to the plasma generation device 40 and the sputtering device 70 (surface treatment mechanism). Therefore, when the storage unit 100d is swung, the workpiece W can be efficiently retained in the area opposite to the surface treatment mechanism, so the efficiency of the surface treatment can be further improved.

[0187] [3. Second embodiment]

[0188] use Fig.24 , Fig.25 A surface treatment device 1 b as a second embodiment of the present invention will be described. Fig.24 This is a hardware block diagram illustrating the hardware configuration of the surface treatment device according to the second embodiment. Fig.25 It is a diagram showing a specific example of the swing pattern.

[0189] Surface treatment device 1b except Fig.24 In addition to the hardware configuration shown, the surface treatment device 1a described above has an additional function of instructing a swing pattern when the storage unit 100 is swung. More specifically, the control unit 190 that controls the operation of the servo motor 120 also functions as an instruction means for instructing a swing pattern.

[0190] That is, the surface treatment device 1 b has a configuration in which a control unit 190 , a storage unit 192 , a monitor 196 , and a touch panel 198 are added to the above-mentioned surface treatment device 1 .

[0191] The control unit 190 includes a CPU (Central Processing Unit) 190a, a ROM (Read Only Memory) 190b, and a RAM (Random Access Memory) 190c. The CPU 190a is connected to the ROM 190b and the RAM 190c via an internal bus 194. The CPU 190a expands various programs stored in the ROM 190b and the storage unit 192 into the RAM 190c. The CPU 190a controls the servo motor 120 by operating according to the various programs expanded into the RAM 190c. That is, the control unit 190 has a structure of a general computer.

[0192] The control unit 190 also uses the internal bus 194 192 is connected to a storage unit 192 , a monitor 196 , a touch panel 198 , and a servo motor 120 .

[0193] The storage unit 192 is a nonvolatile memory such as a flash memory or a HDD (Hard Disk Drive) that retains stored information even when the power is turned off. The storage unit 192 stores the control program P1 and the wobble pattern data Q1.

[0194] The control program P1 is a program for controlling the operation of the servo motor 120. The swing pattern data Q1 is a data file storing a drive waveform when the servo motor 120 is driven. In addition, the drive output of the servo motor 120 is transmitted to the storage unit support member 110 disposed inside the chamber 10 via the swing shaft 111. Then, the storage unit support member 110 and the storage unit 100 disposed inside the storage unit support member 110 (in Fig.21 The swing pattern data Q1 will be described in detail later.

[0195] The monitor 196 and the touch panel 198 function as a display operation mechanism for the operator of the surface treatment device 1b to give instructions necessary for operating the surface treatment device 1b and for displaying the operating state of the surface treatment device 1b. Specifically, the monitor 196 is composed of, for example, a liquid crystal panel, and the touch panel 198 is superimposed on the surface of the monitor 196. In addition, a keyboard may be provided instead of the touch panel 198.

[0196] Swing pattern data Q1 such as Fig.25 As shown, a plurality of wobble patterns θ1(t), θ2(t), and θ3(t) are stored. Fig.25 (a) is a normal sine wave. That is, the oscillation pattern θ1(t) oscillates the storage unit 100 with a half period of time s and a period of time 2s.

[0197] Fig.25 (b) is an example of an oscillation pattern θ2(t) that blunts the apex of the triangular wave. By oscillating the receiving unit 100 with such an oscillation pattern θ2(t), the receiving unit 100 moves faster when θ2(t) changes from angle θa to angle -θa, and moves slower when θ2(t) changes from angle -θa to angle θa. As a result, the workpiece W received in the receiving unit 100 is subjected to a stronger acceleration near the point of change in velocity (near the position where the sign of the differential coefficient of the oscillation pattern θ2(t) changes), so it is easier to be stirred.

[0198] Fig.25 (c) is an example of an oscillation pattern θ3(t) that blunts the apex of the triangular wave. The speed pattern of the oscillation pattern θ2(t) when the housing unit 100 is oscillated is different from that of the oscillation pattern θ3(t). That is, according to the oscillation pattern θ3(t), the housing unit 100 moves more slowly when θ3(t) changes from an angle θa to an angle -θa, and moves more quickly when θ2(t) changes from an angle -θa to an angle θa. As a result, the workpiece W contained in the housing unit 100 is subjected to a higher acceleration near the point of change in speed (near the position where the sign of the differential coefficient of the oscillation pattern θ3(t) changes), and is therefore more easily stirred.

[0199] The operator of the surface treatment device 1 selects one of the plurality of swing patterns θ1(t), θ2(t), θ3(t) displayed on the monitor 196 using the touch panel 198. Then, the control unit 190 drives the servo motor 120 in the selected swing pattern to swing the storage unit 100.

[0200] In addition, the specific example of the swing pattern data Q1 is not limited to Fig.25 In order to efficiently stir the workpiece W, it is preferable to apply a swing pattern in which the acceleration of the storage unit 100 changes rapidly.

[0201] As described above, in the surface treatment device 1b of the second embodiment, the control unit 190 (indicating means) indicates the swing pattern of the receiving unit 100. Therefore, the receiving unit 100 can be swung by any pre-set swing pattern. Thus, the treated workpiece W accommodated in the receiving unit 100 can be stirred more efficiently.

[0202] In addition, in the surface treatment devices 1a and 1b of the above-mentioned embodiments, the form in which the plasma generation device 40 and the sputtering device 70 are provided as the surface treatment mechanism is described, but other surface treatment mechanisms may also be provided. In this case, it is sufficient to arrange the hinges installed on different surface treatment mechanisms in the chamber 10 at appropriate intervals according to the shapes of the surface treatment mechanisms and the chamber 10. That is, it is sufficient to make the plurality of surface treatment mechanisms installed on the chamber 10 to be opened and closed freely via the hinges alternately located in the chamber 10, and when the surface treatment mechanism is located outside the chamber 10, it is sufficient to make it not interfere with other surface treatment mechanisms and be located outside the chamber 10.

[0203] Description of symbols

[0204] 1a, 1b…surface treatment device; 10…chamber; 11…opening; 12…upper wall; 13…side wall; 14…supporting wall; 15…bottom; 16…gas inlet; 20…first opening and closing member; 21…hinge; 30…second opening and closing member; 31…hinge; 40…plasma generating device (surface treatment mechanism); 41…gas supply pipe; 42…gas flow path; 43…gas supply hole; 44…gas supply part; 45…gas supply pipe mounting member; 46…supporting member; 50…supporting plate; 50a…recess; 51, 52…plate-shaped conductor; 53, 54…through hole; 55…pad ; 56…gap portion; 57…gas inlet portion; 58…holding member; 60…matching box (MB); 61…high frequency power supply (RF); 63…grounding; 64…mass flow controller (MFC); 70…sputtering device (surface treatment mechanism); 71…cooling water pipe; 72…cooling water channel; 73…water inlet; 74…water outlet; 75…cooling water pipe mounting member; 76…support member; 80…support plate; 81…magnet; 82…cooling jacket; 83…insulating member; 84…target; 85…holding member; 100, 100a, 100b, 100c, 100d…housing unit; 101…treated Component holding wall; 102, 102a, 102b, 102c, 102d, 102e, 102f…side wall; 103…opening; 104…mounting plate; 110…accommodating unit supporting member; 111…swing shaft; 112…side plate; 113…mounting member; 114…swing mechanism shaft connecting portion; 115…support shaft connecting portion; 116…support shaft; 117…support shaft supporting member; 120…servo motor (stirring mechanism); 121…output shaft; 122…servo motor mounting member; 125…drive shaft; 130a…correction plate; 132…mounting portion; 140…pump unit; 141… Mounting flange; 143…driving mechanism support portion; 150…flow regulating valve; 151…flow path portion; 152…opening portion; 153…lifting valve; 155…adjusting opening portion; 160…servo actuator; 161…turbine jack; 162…lifting shaft; 163…connecting member; 165…valve guide portion; 166…guide engaging portion; 170…turbomolecular pump; 171…pump flange; 180…vacuum gauge; 190…control portion (indicating mechanism); 192…storage portion; H…width; R…accommodation space; W…processed object; θ1(t), θ2(t), θ3(t)…swinging pattern; ω…angle.

Claims

1. A surface treatment device, characterized in that: have: A receiving unit for receiving the processed parts; a surface treatment mechanism for performing surface treatment on the treated piece received in the receiving unit; and a stirring mechanism for stirring the workpiece when the surface treatment mechanism performs surface treatment on the workpiece; The stirring mechanism causes the storage unit to swing around a swing shaft that penetrates in a direction parallel to the surface treatment mechanism. The swing shaft is arranged between the surface treatment mechanism and the bottom of the receiving unit, so that the bottom of the receiving unit swings along an arc centered on the swing shaft. The receiving unit is formed such that the area of ​​the portion receiving the treated object becomes smaller as it approaches the bottom portion located in a direction away from the surface treatment mechanism and the swing axis, and the width of the receiving unit in a direction orthogonal to the swing axis becomes narrower as it approaches the bottom portion. The storage unit includes the bottom, a side wall vertically rising from the bottom in a direction orthogonal to the swing axis, and an inclined side wall connecting the bottom and the side wall.

2. The surface treatment device according to claim 1, characterized in that: The stirring mechanism causes the storage unit and the surface treatment mechanism to swing integrally.

3. The surface treatment device according to claim 1 or 2, characterized in that: It also includes an indicating mechanism for indicating the swinging pattern of the above-mentioned receiving unit, or the above-mentioned receiving unit and the above-mentioned surface treatment mechanism, The stirring mechanism stirs the workpiece in accordance with the swing pattern indicated by the indicating mechanism.

4. The surface treatment device according to claim 1, characterized in that: The side wall has an inclination outside an effective range where the surface treatment is efficiently performed in a region where the lower bottom of the storage unit faces the surface treatment mechanism.

5. The surface treatment device according to claim 1, characterized in that: The surface treatment mechanism is a plasma generating device that performs surface treatment of the workpiece by irradiating the workpiece accommodated in the accommodation unit with plasma.

6. The surface treatment device according to claim 5, characterized in that: The electrode of the plasma generating device is provided outside the storage space of the treatment object of the storage unit and independently of the storage space.

7. The surface treatment device according to claim 1, characterized in that: The surface treatment mechanism is a sputtering device that performs sputtering on the workpiece accommodated in the accommodation unit.

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