Vapor deposition mask and method for manufacturing device using the vapor deposition mask

Abstract

A vapor deposition mask and a method for manufacturing an apparatus using the vapor deposition mask. The vapor deposition mask includes a silicon substrate including a first region and a second region, the first region having a first thickness and including a portion provided with a plurality of through holes, and the second region being provided at the periphery of the first region and having a second thickness greater than the first thickness. The silicon substrate has an inner wall constituting a step between the first region and the second region. In a plan view, an outer edge of the inner wall has a curved portion, and in a cross-sectional view, the inner wall has a plurality of steps.

Description

Technical Field

[0001] The present disclosure relates to a vapor deposition mask using a semiconductor substrate and a method of manufacturing a device using the vapor deposition mask, etc. Background Art

[0002] A variety of methods for manufacturing organic light emitting diodes (OLEDs) have been proposed. Specifically, the methods used are a method of etching an organic material formed into a film on a substrate to prepare an OLED, a method of dispensing an organic material using an inkjet method to apply the organic material alone, and a method of applying the organic material alone by vapor deposition using a metal mask. Among these methods, the following method has been used in many cases: a method of applying the organic material alone using a metal mask. However, in the case of using a metal mask, since the metal mask will warp under its own weight as the metal mask becomes thinner, it is difficult to apply the organic material alone with high precision using the warped metal mask.

[0003] In recent years, with the development of high-precision displays, it is further required to apply organic materials separately in a fine manner and apply them with high positional accuracy. Therefore, the metal mask needs to be made thinner and the accuracy of processing through holes needs to be improved. However, when using a metal mask, even if the through holes are formed with a predetermined processing accuracy, the warping of the mask during vapor deposition will become larger, and the shape of the through holes will also change, so that the positional accuracy of vapor deposition is reduced.

[0004] Japanese Patent Publication No. 2002-313564 discusses a vapor deposition mask (shadow mask) using a silicon substrate that is lightweight and has high tensile strength. According to Japanese Patent Publication No. 2002-313564, a vapor deposition mask region having a thickness of tens of micrometers at the center of the silicon substrate is formed so that a frame is left at the periphery of the silicon substrate. The mask region is formed by photolithography and etching. Using a silicon substrate instead of a metal substrate can reduce warping and can provide a vapor deposition mask that prevents a decrease in the accuracy of the vapor deposition position.

[0005] Silicon substrates are processed with higher processing accuracy than metal substrates, are lightweight and have high tensile strength, but are fragile and easily damaged. Therefore, unless they are processed into an appropriate shape, there is a risk that the silicon substrate will be damaged during transportation or vapor deposition.

[0006] Fig.15A and Fig. 15B Each shows a vapor deposition mask (shadow mask) 101 formed of single crystal silicon according to Japanese Patent Laid-Open No. 2002-313564. Fig.15A is a plan view of a vapor deposition mask 101 described in Japanese Patent Laid-Open No. 2002-313564, Fig. 15BThe vapor deposition mask 101 is Fig.15A 1-A' line cross-sectional view. In the vapor deposition mask 101, a silicon frame 102 thicker than the center portion is formed around a shadow mask region 103 having a thickness of several tens of micrometers at the center portion. In order to process the shadow mask region 103 located inside the silicon frame 102 to a thickness of several tens of micrometers, a thinning process is performed by etching using a mixed solution of nitric acid, hydrofluoric acid and glacial acetic acid or a potassium hydroxide aqueous solution, or by using an ultrasonic processing method. Fig.15A The outer edge of the inner wall 104 of the silicon frame 102 shown is quadrilateral in plan view, and has a structure having corners C at four corners of the inner wall 104 in plan view. Therefore, there is a risk that the vapor deposition mask is damaged due to stress concentration on the corners when the vapor deposition mask is handled or when a holding substrate holds the vapor deposition mask and fixes the vapor deposition mask to the holding substrate. Summary of the invention

[0007] In view of these circumstances, the present disclosure is intended to provide a vapor deposition mask that can reduce the risk of breakage when handling the vapor deposition mask or holding the vapor deposition mask on a holding substrate (mask holder) and fixing the vapor deposition mask to the holding substrate, and prevent the accuracy of the vapor deposition position from being reduced. The present disclosure is also intended to provide a vapor deposition device using the vapor deposition mask, a method for manufacturing an apparatus using the vapor deposition mask, and the like.

[0008] According to aspects of the present disclosure, a vapor deposition mask includes a silicon substrate, which includes a first region and a second region, the first region having a first thickness and including a portion configured with a plurality of through holes, the second region being configured at the periphery of the first region and having a second thickness greater than the first thickness, wherein the silicon substrate has an inner wall constituting a step located between the first region and the second region, in a plan view, an outer edge of the inner wall has a curved portion, and in a cross-sectional view, the inner wall has a plurality of steps.

[0009] Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1A is a plan view of a vapor deposition mask according to an exemplary embodiment of the present disclosure. Figure 1B is a cross-sectional view of a vapor deposition mask according to an exemplary embodiment of the present disclosure.

[0011] Figure 2A is a plan view of a vapor deposition mask according to the first exemplary embodiment. Figure 2B is a cross-sectional view of a vapor deposition mask according to the first exemplary embodiment.

[0012] Figure 3 is a cross-sectional view showing a vapor deposition mask according to a first modification example of the first exemplary embodiment.

[0013] Figure 4 is a cross-sectional view showing a vapor deposition mask according to a second modification example of the first exemplary embodiment.

[0014] Figure 5 is a cross-sectional view showing a vapor deposition mask according to a second exemplary embodiment.

[0015] Figure 6 is a plan view showing a vapor deposition mask according to a modification example of the second exemplary embodiment.

[0016] Fig. 7A is a plan view of a vapor deposition mask according to the third exemplary embodiment. Figure 7B is a cross-sectional view of a vapor deposition mask according to a third exemplary embodiment.

[0017] Fig. 8A is a plan view of a vapor deposition mask according to a modification example of the third exemplary embodiment. Figure 8B is a cross-sectional view of a vapor deposition mask according to a modification example of the third exemplary embodiment.

[0018] Fig.9A is a plan view of a vapor deposition mask according to a fourth exemplary embodiment. Fig. 9B is a cross-sectional view of a vapor deposition mask according to a fourth exemplary embodiment.

[0019] Fig. 10A is a plan view of a vapor deposition mask according to a first modification example of the fourth exemplary embodiment. Fig. 10B is a cross-sectional view of a vapor deposition mask according to a first modification example of the fourth exemplary embodiment.

[0020] Fig.11A is a plan view of a vapor deposition mask according to a second modification example of the fourth exemplary embodiment. Fig. 11B is a cross-sectional view of a vapor deposition mask according to a second modification example of the fourth exemplary embodiment.

[0021] Fig. 12A is a plan view of a vapor deposition mask according to a third modification example of the fourth exemplary embodiment. Fig. 12B is a cross-sectional view of a vapor deposition mask according to a third modification example of the fourth exemplary embodiment.

[0022] Fig.13A is a plan view of a vapor deposition mask according to a fourth modification example of the fourth exemplary embodiment. Fig. 13Bis a cross-sectional view of a vapor deposition mask according to a fourth modification example of the fourth exemplary embodiment.

[0023] Fig.14A is a plan view of a vapor deposition mask according to a fifth modification example of the fourth exemplary embodiment. Fig. 14B is a cross-sectional view of a vapor deposition mask according to a fifth modification example of the fourth exemplary embodiment.

[0024] Fig.15A is a plan view of a vapor deposition mask according to the prior art. Fig. 15B is a cross-sectional view of a vapor deposition mask according to the prior art. DETAILED DESCRIPTION

[0025] Exemplary embodiments for carrying out the present disclosure will be described below with reference to the accompanying drawings.

[0026] Figure 1A is a plan view of a vapor deposition mask 1 according to an exemplary embodiment of the present disclosure. Figure 1B The vapor deposition mask 1 is along Figure 1A A plan view is also called a plan view, and a cross-sectional view is also called a cross-sectional view. Figure 1A is a diagram showing an XY plane, Figure 1B is a diagram showing an XZ plane. The length in the X direction is referred to as width, and the length in the Z direction is referred to as height. That is, the height of the first surface is greater than the height of the second surface, which means that the first surface is located closer to the positive direction in the Z direction than the second surface. Conversely, the height of the first surface is less than the height of the second surface, which means that the first surface is located closer to the negative direction in the Z direction than the second surface. For a silicon substrate, the length in the Z direction can be referred to as thickness.

[0027] exist Figure 1B , it is assumed that the vapor deposition substrate 11 side of the vapor deposition mask 1 is the upper surface, and the vapor deposition material source 10 side is the lower surface of the vapor deposition mask 1. The vapor deposition material flies out from the lower surface side of the vapor deposition mask 1, passes through the through hole 5, and then forms a film on the vapor deposition substrate 11. A plurality of through holes 5 are formed, and it is assumed that the region where the plurality of through holes 5 are formed is the first region 100. Around the first region 100, a second region 200 having a substrate thickness greater than that in the first region 100 is formed. The inner wall 4 is formed to surround the space on the lower surface side in the first region 100. The inner wall 4 also serves as a member constituting a step between the first region 100 and the second region 200.

[0028] like Figure 1AAs shown, the first area 100 is surrounded by the outer edge of the inner wall 4 in a plan view, and the outer edge of the inner wall 4 has a curved portion in a plan view. For example, the outer edge of the inner wall 4 is round. The "curved portion" mentioned here is a portion without a corner and in a continuously curved state. The "corner" mentioned here is a shape formed by two sides extending from a vertex. This structure without corners can prevent the occurrence of stress concentration and further improve the mechanical strength.

[0029] Around the first region 100, a second region 200 having a substrate thickness greater than that in the first region 100 is formed. Similar to the outer edge of the inner wall 4, the outer edge of the second region 200 located at the outermost periphery also has a curved portion in a plan view. For example, the outer edge of the outermost periphery in the second region 200 is circular. Configuring the second region 200 having a substrate thickness greater than that in the first region 100 relative to the first region 100 can improve the mechanical strength of the vapor deposition mask 1. Since the outer edge of the outermost periphery in the second region 200 has a curved portion, the present exemplary embodiment can prevent the occurrence of stress concentration and further can improve the mechanical strength.

[0030] With this structure, by having curved portions at both the outer edge of the inner wall 4 and the outer edge of the outermost periphery, even if the vapor deposition mask is composed of a semiconductor substrate, when the vapor deposition mask is held by the holding substrate and the vapor deposition mask is fixed to the holding substrate, the occurrence of stress concentration on the vapor deposition mask can be reduced, and the risk of damage to the vapor deposition mask can be reduced. In addition, the present exemplary embodiment uses a vapor deposition mask composed of a semiconductor substrate, thereby preventing the accuracy of the vapor deposition position from being reduced.

[0031] Although Figure 1A and Figure 1B Examples are shown in which the entire outer edge of the inner wall 4 has a curved portion in a plan view, and the entire outer edge of the outermost periphery of the second region 200 has a curved portion, but it is not necessary for the entire outer edge to have a curved portion in order to present the beneficial effects of the present disclosure. For example, it is only required that the vapor deposition mask 1 has a structure without corners in a range corresponding to at least half of the entire length of the inner wall 4 or at least half of the entire length of the outer edge of the outermost periphery. In many cases, the semiconductor substrate is provided with a linear cut (orientation flat or notch) indicating the direction of the crystal axis. However, in the present specification, it is not included in the corner located at the outer edge of the outermost periphery.

[0032] Figure 2A is a plan view of a vapor deposition mask 1 according to the first exemplary embodiment. Figure 2B The vapor deposition mask 1 is along Figure 2A Cross-sectional view along line A-A'.

[0033] A substrate having a diameter of 200 mm (with an allowable error of ±0.5 mm) can be used for the vapor deposition mask 1 according to the first exemplary embodiment. In this case, a single crystal silicon substrate, a silicon on insulator (SOI) substrate, or the like having a substrate thickness of 100 μm or more and 750 μm or less can be used. Alternatively, a substrate having a diameter of 300 mm (with an allowable error of ±0.2 mm) can also be used. In this case, a single crystal silicon substrate, an SOI substrate, or the like having a substrate thickness of 100 μm or more and 800 μm or less can be used.

[0034] Considering the mechanical strength, there is a case where the vapor deposition mask 1 is constructed in a state where the portion of the vapor deposition mask 1 in the second region 200 remains thick. In this case, the thickness of the silicon substrate having a diameter of 200 mm in the second region 200 is 200 μm or more and 750 μm or less. The thickness of the silicon substrate having a diameter of 300 mm in the second region 200 is 300 μm or more and 800 μm or less. The value of this thickness is the value of the maximum thickness in the second region 200, and does not include the thickness of the countersunk hole portion to be described later.

[0035] On the other hand, the thickness in the first region 100 is about 1 μm to 100 μm. More specifically, the thickness is 5 μm or more and 50 μm or less. Therefore, the ratio between the thickness of the silicon substrate in the first region 100 and the thickness of the silicon substrate in the second region 200 is 4 to 160.

[0036] The manufacturing method of the vapor deposition mask 1 is as follows. First, a mask pattern for forming the through hole 5 is formed on the upper surface in the first region 100 by photolithography and etching. Subsequently, the substrate is thinned to several tens of micrometers from the lower surface in the first region 100 by reactive ion etching (RIE) or mechanical processing, and then the through hole 5 is formed from the upper surface by RIE. When the thinning process is performed on the substrate in the first region 100, the inner wall 4 surrounding the space on the lower surface side in the first region 100 is formed at the same time.

[0037] The outer edge of the inner wall 4 has a curved portion in a plan view and is, for example, circular. In addition, the outer edge of the outermost periphery in the second region 200 also has a curved portion in a plan view and is, for example, circular. This structure without corners can prevent the occurrence of stress concentration and further improve the mechanical strength.

[0038] The through hole 5 can be formed by RIE processing, and thus can be formed with high dimensional accuracy. The width of the through hole 5 is 5 mm to 40 mm, for example, 30 mm. The shape of the through hole 5 is not limited to a quadrilateral, and can be freely changed as needed. Figure 2BAs shown, the angle θ between the upper surface 6 of the vapor deposition mask 1 and the inner wall 4 is less than 90°. That is, the angle θ is an acute angle. That is, contrary to the upper surface, the angle between the lower surface side in the first region 100 and the inner wall 4 is greater than 90°. With this construction, the angle between the lower surface side in the first region 100 and the inner wall 4 is an obtuse angle. This construction can further reduce the occurrence of stress concentration on the first region 100 with a small thickness when processing a vapor deposition mask formed by a semiconductor substrate, or when holding a vapor deposition mask on a holding substrate and fixing the vapor deposition mask to the holding substrate. In addition, this construction can reduce the risk of damage to the vapor deposition mask.

[0039] First Modification

[0040] Figure 3 The vapor deposition mask 1 is shown along with Figure 2A The cross-sectional view at the same position as the cross-sectional view of the line AA' in FIG. 1 is a cross-sectional view, but the cross-sectional shape of the inner wall 4 is different from that of FIG. Figure 2B The difference is shown. Figure 3 In the embodiment, the shape of the inner wall 4 is a stepped shape consisting of two steps having different angles relative to the upper surface in the first region 100. It is assumed that the angle between the inner wall 4a of the vapor deposition mask 1 located on the lower surface side and the upper surface 6 of the vapor deposition mask 1 is θa. It is assumed that the angle between the inner wall 4b of the vapor deposition mask 1 located on the upper surface side and the upper surface 6 of the vapor deposition mask 1 is angle θb. In this case, the relationship of θa>θb holds. Therefore, the angle between the lower surface side in the first region 100 and the inner wall 4b of the vapor deposition mask 1 located on the upper surface side is an angle that is more obtuse than the angle between the lower surface side in the first region 100 and the inner wall 4a of the vapor deposition mask 1 located on the lower surface side. This configuration can further reduce the occurrence of stress concentration on the first region 100 with a small thickness when processing a vapor deposition mask formed by a semiconductor substrate, or when holding a substrate to hold the vapor deposition mask and fixing the vapor deposition mask to the holding substrate. In addition, this configuration can reduce the risk of damage to the vapor deposition mask.

[0041] Although Figure 3 The case of the inner wall 4 having a two-step configuration is shown, but the inner wall 4 is not limited to this configuration. Adopting a configuration with an increased number of steps enables the step near the through hole 5 to have a more obtuse angle. This can further reduce the risk of damage to the vapor deposition mask.

[0042] Second Modification

[0043] Figure 4 The vapor deposition mask 1 is shown along with Figure 2A The cross-sectional view of the second region 200 is at the same position as the cross-sectional view of the line AA' in FIG. Figure 2B Different than shown.

[0044] exist Figure 4 In the embodiment of the present invention, a countersink portion 7 is formed in which a portion of the upper surface in the second region 200 is lowered by a height h from the upper surface 6 of the vapor deposition mask 1. The countersink portion 7 is a position where a jig for fixing the vapor deposition mask 1 to a mask holder to be described later is pressed. The countersink portion 7 is also a position where a jig for conveying the vapor deposition substrate 11 is prevented from contacting the vapor deposition mask 1 when the vapor deposition substrate 11 is brought close to the vapor deposition mask 1.

[0045] Although Figure 4 An example in which the countersunk hole portion 7 is arranged at two positions is shown, but the countersunk hole portion 7 may be arranged in a plurality of positions of the vapor deposition mask 1. In addition, the height h from the upper surface 6 of the vapor deposition mask 1 may be freely changed according to the shape of the jig pressed against the countersunk hole portion 7. Furthermore, the countersunk hole portion 7 may penetrate a portion of the vapor deposition mask 1.

[0046] like Figure 4 As shown, even if a portion of the vapor deposition mask 1 is thinner due to the countersunk hole portion 7 provided in the second region 200, the inner wall 4 of the vapor deposition mask 1 and the outer edge of the outer periphery of the vapor deposition mask 1 are both rounded. This configuration can prevent the occurrence of stress concentration on the vapor deposition mask when handling the vapor deposition mask formed of a semiconductor substrate or holding the vapor deposition mask on a holding substrate and fixing the vapor deposition mask to the holding substrate, and can reduce the risk of damage to the vapor deposition mask.

[0047] In the second exemplary embodiment, a description will be given of a vapor deposition apparatus and a step of preparing a device using a vapor deposition mask (specifically, part of a step of preparing an organic light emitting diode (OLED)).

[0048] exist Figure 5 In the embodiment, the vapor deposition apparatus 500 (vapor deposition chamber) is provided with a vapor deposition material source 10 that emits sublimated vapor deposition material and a substrate holder 520 (holding mechanism) that holds a vapor deposition substrate 11. In addition, the vapor deposition apparatus 500 is provided with a mask base 600 (holding mechanism) that holds a vapor deposition mask 1 and a fixing plate 510 that positions the vapor deposition substrate 11 and the vapor deposition mask 1. The vapor deposition mask 1 is arranged between the vapor deposition substrate 11 and the vapor deposition material source 10. In Figure 5 In FIG. 6 , the mask base 600 directly holds the vapor deposition mask 1 , but as described later, the mask holder may hold the vapor deposition mask 1 , and the mask base 600 may hold both the vapor deposition mask 1 and the mask holder.

[0049] The positions of the vapor deposition mask 1 and the vapor deposition substrate 11 are adjusted by driving the substrate holder 520 and the mask base 600. That is, an alignment step is performed.

[0050] The light-emitting material as the vapor deposition material discharged from the vapor deposition material source 10 passes through the through hole 5, and the film of the light-emitting material is formed as the light-emitting material portion 12 at the desired position of the vapor deposition substrate 11. As the light-emitting material, a white organic material or red, green and blue (R, G and B) organic materials can be selected. In the case of a white organic material, an OLED can be prepared, for example, by forming a film of the light-emitting material portion 12 in a light-emitting region corresponding to a through hole width of 30 mm, and forming a color filter (not shown) and an electrode (not shown), etc.

[0051] In the case of applying R, G, and B organic materials separately, the R, G, and B organic materials need to be film-formed at desired positions on the vapor deposition substrate 11 in units of pixels, and the positional relationship of the through hole 5 in the vapor deposition mask 1 is changed according to each color of R, G, and B. The width of the through hole 5 is reduced to several micrometers corresponding to the size of the pixel.

[0052] Preparing an OLED using a vapor deposition mask having curved portions in both the inner wall 4 and the outer edge of the periphery as described in this exemplary embodiment can prevent the accuracy of the vapor deposition position from being reduced and can also reduce the risk of damage to the vapor deposition mask, thereby improving the manufacturing yield of the OLED.

[0053] Modifications

[0054] A modification of the second exemplary embodiment relates to a case where R, G, and B organic materials are applied individually in units of pixels at desired positions of the vapor deposition substrate 11. A description is given of a specific example of a case where organic materials are applied individually using vapor deposition masks corresponding to each of R, G, and B.

[0055] like Figure 6 As shown, a plurality of pixel regions 8 for OLED are arranged at desired positions in the first region 100 of the vapor deposition mask 1, and a plurality of fine through holes 9 corresponding to R, G and B are formed in each pixel region 8. The through hole width of the fine through hole 9 is several microns, and can be formed with high precision by photolithography and RIE.

[0056] Preparing an OLED using a vapor deposition mask having curved portions on both the inner wall 4 and the outer edge of the periphery as described in this variation can prevent a decrease in the accuracy of the vapor deposition position and can also reduce the risk of damage to the vapor deposition mask, thereby improving the manufacturing yield of the OLED.

[0057] Fig. 7Ais a plan view of a vapor deposition mask 1 according to a third exemplary embodiment, Figure 7B The vapor deposition mask 1 is along Fig. 7A Cross-sectional view along line A-A'.

[0058] In the case of using the above-mentioned vapor deposition mask 1, the vapor deposition mask 1 is held by and fixed to the mask holder and is positioned with the vapor deposition substrate 11 in most cases. The vapor deposition mask 1 and the mask holder 21 are arranged between the vapor deposition material source 10 and the vapor deposition substrate 11. Figure 7B , assuming that the vapor deposition substrate 11 side of the vapor deposition mask 1 is the upper surface and the vapor deposition material source 10 side is the lower surface, the mask holder 21 is arranged on the lower surface side of the vapor deposition mask 1. An opening 60 having a smaller diameter than the vapor deposition mask 1 is formed in the mask holder 21. The vapor deposition material discharged from the lower surface side of the vapor deposition mask 1 passes through the opening 60 of the mask holder 21 and the through hole 5 of the vapor deposition mask 1, and forms a film on the vapor deposition substrate 11.

[0059] As described in the above exemplary embodiment, the vapor deposition mask 1 has the first region 100 in which the plurality of through holes 5 are formed, and the inner wall 4 is formed to surround the space on the lower surface side in the first region 100 .

[0060] In addition, the upper surface of the mask holder 21 is formed with a drop portion 22 for holding and fixing the vapor deposition mask 1. The drop portion 22 has a recess corresponding to the shape of the second region 200 of the vapor deposition mask 1. Since the vapor deposition mask 1 is configured to cooperate with the drop portion 22 of the mask holder 21, the vapor deposition mask 1 can be easily positioned with the mask holder 21. In order to reliably fix the vapor deposition mask 1 and the mask holder 21 to each other, the vapor deposition mask 1 and the mask holder 21 can be fixed to each other by applying an adhesive (not shown) to the drop portion 22.

[0061] Since the present exemplary embodiment utilizes the above-mentioned vapor deposition mask 1, the inner wall 4 and the outer edge of the periphery have curved portions. Therefore, even when the vapor deposition mask 1 formed by the semiconductor substrate is dropped onto the mask holder 21 so that the mask holder 21 holds the vapor deposition mask 1 and the vapor deposition mask 1 is fixed to the mask holder 21, the present exemplary embodiment can reduce the occurrence of stress concentration on the vapor deposition mask and can reduce the risk of damage to the vapor deposition mask. In addition, the present exemplary embodiment uses a silicon substrate for the vapor deposition mask, thereby preventing the accuracy of the vapor deposition position from being reduced.

[0062] Modifications

[0063] Fig. 8Ais a plan view of a vapor deposition mask 1 according to a modification of the third exemplary embodiment, Figure 8B The vapor deposition mask 1 is along Fig. 8A Cross-sectional view along line A-A'.

[0064] Although Figure 8B The structure and Figure 7B The structure is substantially the same as in , but the drop portion 22 is formed in the mask holder 21 whose upper surface is located at a height substantially equal to the height of the upper surface 6 of the vapor deposition mask 1. The vapor deposition mask 1 is fixed to the mask holder 21 by bringing the inner edge of the drop portion 22 into contact with the outer edge of the vapor deposition mask 1. Figure 7B Compared to the construction shown, Figure 8B The advantage of the illustrated configuration is that only the outer edge of the vapor deposition mask 1 is lowered to match the inner edge of the drop portion 22 , which can facilitate positioning and fixing.

[0065] Since this modification also utilizes the above-mentioned vapor deposition mask 1, the inner wall 4 and the outer edge of the outer periphery have curved portions. Therefore, even when the vapor deposition mask 1 is dropped onto the mask holder 21 to hold and fix the vapor deposition mask 1, this modification can reduce the occurrence of stress concentration on the vapor deposition mask and can reduce the risk of damage to the vapor deposition mask. In addition, this modification uses a silicon substrate for the vapor deposition mask, thereby preventing the accuracy of the vapor deposition position from being reduced.

[0066] Fig.9A is a plan view of a vapor deposition mask 1 according to the fourth exemplary embodiment. Fig. 9B The vapor deposition mask 1 is along Fig.9A A cross-sectional view along line AA' is shown.

[0067] The upper surface side of the mask holder 21 is provided with two positioning pins 23 for positioning the vapor deposition mask 1 and a movable fixing pin 24 for fixing the vapor deposition mask 1 to the mask holder 21. The vapor deposition mask 1 is positioned on the mask holder 21 by the two positioning pins 23, and then the movable fixing pin 24 is slid to press against the vapor deposition mask 1, and then the movable fixing pin 24 is fixed with a screw (not shown). This allows the vapor deposition mask 1 to be reliably fixed to the mask holder 21 with high positioning accuracy.

[0068] Since the present exemplary embodiment also utilizes the above-mentioned vapor deposition mask 1, the inner wall 4 and the outer edge of the periphery have curved portions. Therefore, even when the mask holder 21 is made to hold the vapor deposition mask formed of a semiconductor substrate and the vapor deposition mask is fixed to the mask holder 21 using positioning pins and movable fixing pins, the present exemplary embodiment can reduce the occurrence of stress concentration on the vapor deposition mask and can reduce the risk of damage to the vapor deposition mask. In addition, the present exemplary embodiment uses a silicon substrate for the vapor deposition mask, thereby preventing the accuracy of the vapor deposition position from being reduced.

[0069] First Modification

[0070] Fig. 10A is a plan view of a vapor deposition mask 1 according to a first modification example of the fourth exemplary embodiment. Fig. 10B The vapor deposition mask 1 is along Fig. 10A A cross-sectional view along line AA' is shown.

[0071] In this modification, a method of fixing the vapor deposition mask 1 to the mask holder 21 using the leaf spring 25 will be described. A countersunk hole portion 7 is formed in the vapor deposition mask 1. The leaf spring 25 provided on the mask holder 21 is assembled to the countersunk hole portion 7, and then the vapor deposition mask 1 and the mask holder 21 are fixed to each other using the fixing screw 26.

[0072] Although in Fig. 10B In the embodiment, the positioning is performed by dropping the vapor deposition mask 1 onto the drop portion 22, but the positioning may be performed by using a method such as Fig. 9B The positioning pins 23 shown in the figure are used to perform positioning. In addition, the vapor deposition mask 1 can be fixed by configuring the leaf springs 25 and the fixing screws 26 on the positioning pins 23. In this modification, an example in which the leaf springs 25 are configured at two positions is shown, but the number of positions for fixing the vapor deposition mask 1 can be increased. Since there can be a plurality of positions for fixing the vapor deposition mask 1 to the mask holder 21, this modification can more reliably fix the vapor deposition mask 1 to the mask holder 21.

[0073] Since this modification also utilizes the above-mentioned vapor deposition mask 1, the inner wall 4 and the outer edge of the periphery have curved portions. Therefore, even when the vapor deposition mask formed of a semiconductor substrate is held by a mask holder and the vapor deposition mask is fixed to the mask holder using a leaf spring, this modification can reduce the occurrence of stress concentration on the vapor deposition mask and can reduce the risk of damage to the vapor deposition mask. In addition, this modification uses a silicon substrate for the vapor deposition mask, thereby preventing the accuracy of the vapor deposition position from being reduced.

[0074] Second Modification

[0075] Fig.11Ais a plan view of a vapor deposition mask 1 according to a second modification example of the fourth exemplary embodiment. Fig. 11B The vapor deposition mask 1 is along Fig.11A A cross-sectional view along line AA' is shown.

[0076] In this modification, a method of fixing the vapor deposition mask 1 to the mask holder 21 using the fixing plate 27 will be described. The fixing plate 27 having a through hole having a larger diameter than the inner wall 4 of the vapor deposition mask 1 is made to cover the vapor deposition mask 1 and the mask holder 21 from above, and is fixed to the mask holder 21 using the fixing screws 26. Since the fixing plate 27 fixes the vapor deposition mask 1 in a manner covering substantially the entire circumference of the second region 200 of the vapor deposition mask 1, the present modification can fix the vapor deposition mask 1 more reliably.

[0077] Since this modification also utilizes the above-mentioned vapor deposition mask 1, the inner wall 4 and the outer edge of the periphery have curved portions. Therefore, when the mask holder holds the vapor deposition mask formed of a semiconductor substrate and the vapor deposition mask is fixed to the mask holder using a fixing plate, this modification can reduce the occurrence of stress concentration on the vapor deposition mask and can reduce the risk of damage to the vapor deposition mask. In addition, this modification uses a silicon substrate for the vapor deposition mask, thereby preventing the accuracy of the vapor deposition position from being reduced.

[0078] Third Modification

[0079] Fig. 12A is a plan view of a vapor deposition mask 1 according to a third modification example of the fourth exemplary embodiment. Fig. 12B The vapor deposition mask 1 is along Fig. 12A A cross-sectional view along line AA' is shown.

[0080] In this modification, a method of fixing the vapor deposition mask 1 to the mask holder 21 using the fixing pins 29 will be described. A through hole 28 is formed in the vapor deposition mask 1, and the fixing pins 29 having an outer diameter almost the same as the inner diameter of the through hole 28 are pressed against the through hole 28 in the mask holder 21 to fix the vapor deposition mask 1. Since the fixing pins 29 are inserted into the through hole 28 and fixed to the holes formed in the mask holder 21, the vapor deposition mask 1 and the mask holder 21 can be easily and simultaneously fixed and positioned only by the fixing pins 29.

[0081] Since this modification also utilizes the above-mentioned vapor deposition mask 1, the inner wall 4 and the outer edge of the periphery have curved portions. Therefore, when the mask holder 21 holds the vapor deposition mask formed of a semiconductor substrate and the vapor deposition mask is fixed to the mask holder 21 using fixing pins, this modification can reduce the occurrence of stress concentration on the vapor deposition mask and can reduce the risk of damage to the vapor deposition mask. In addition, this modification uses a silicon substrate for the vapor deposition mask, thereby preventing the accuracy of the vapor deposition position from being reduced.

[0082] Fourth Modification

[0083] Fig.13A is a plan view of a vapor deposition mask 1 according to a fourth modification example of the fourth exemplary embodiment. Fig. 13B The vapor deposition mask 1 is along Fig.13A A cross-sectional view along line AA' is shown.

[0084] In this modification, the use of Fig.11A and Fig. 11B The method of fixing the vapor deposition mask 1 to the mask holder 21 using the fixing pins 29 of the same structure. Fig. 12A and Fig. 12B The difference of the structure shown in FIG. 12B is that, unlike the structure in FIG. 12B, the fixing pins 29 are not arranged inside the through holes 28 of the vapor deposition mask 1, but are arranged as shown in FIG. Fig. 13B As shown, an escape portion 30 is provided which is formed on the lower surface side of the vapor deposition mask 1 and does not penetrate. Fig. 12A and Fig. 12B The vapor deposition mask 1 and the mask holder 21 can be fixed and positioned at the same time as in the structure of Fig. 12A and Fig. 12B Unlike the structure in the embodiment, the through hole 28 is not formed, so this modification can improve the mechanical strength of the vapor deposition mask 1 and reduce the possibility of breakage. In order to prevent the vapor deposition mask 1 from being broken when configuring the vapor deposition mask 1, it is preferable to use a fixing pin 29 formed of, for example, rubber.

[0085] Since this modification also utilizes the above-mentioned vapor deposition mask 1, the inner wall 4 and the outer edge of the periphery have curved portions. Therefore, when the mask holder 21 holds the vapor deposition mask formed of a semiconductor substrate and the vapor deposition mask is fixed to the mask holder 21 using fixing pins, this modification can reduce the occurrence of stress concentration on the vapor deposition mask and can reduce the risk of damage to the vapor deposition mask. In addition, this modification uses a silicon substrate for the vapor deposition mask, thereby preventing the accuracy of the vapor deposition position from being reduced.

[0086] Fifth Modification

[0087] Fig.14A is a plan view of a vapor deposition mask 1 according to a fifth modification example of the fourth exemplary embodiment. Fig. 14B The vapor deposition mask 1 is along Fig.14A A cross-sectional view along line AA' is shown.

[0088] In this modification, a method of fixing the above-mentioned vapor deposition mask 1 to a mask holder 21 provided with a convex portion 31 will be described. The outer periphery of the vapor deposition mask 1 is formed with a countersunk hole portion 7, the mask holder 21 is formed with a convex portion 31 whose shape fits with the countersunk hole portion 7, and the vapor deposition mask 1 is configured so that the convex portion 31 of the mask holder 21 fits with the countersunk hole portion 7 of the vapor deposition mask 1. The convex portion 31 can be prepared by machining the mask holder 21 or bonding other materials to the mask holder 21.

[0089] and Fig. 10A and Fig. 10B Unlike the countersunk hole portion 7 shown, the countersunk hole portion 7 of the vapor deposition mask 1 according to the present modification is a countersunk hole portion obtained by removing a portion of the vapor deposition mask 1. That is, the countersunk hole portion 7 is formed as a recessed portion in a plan view. Since the countersunk hole portion 7 (recessed portion) of the vapor deposition mask 1 and the convex portion 31 of the mask holder 21 are fixed to each other by fitting, the vapor deposition mask 1 and the mask holder 21 can be easily positioned and fixed to each other.

[0090] Since this variation also utilizes the above-mentioned vapor deposition mask 1, the inner wall 4 and the outer edge of the periphery both have curved portions. Therefore, when the mask holder holds the vapor deposition mask formed by a semiconductor substrate and fixes the vapor deposition mask to the mask holder by fitting, this variation can reduce the occurrence of stress concentration on the vapor deposition mask and can reduce the risk of damage to the vapor deposition mask. In addition, this variation uses a silicon substrate for the vapor deposition mask, thereby preventing the accuracy of the vapor deposition position from being reduced. Although a plurality of exemplary embodiments of the present disclosure have been described, the present disclosure is not limited to these exemplary embodiments. The above-mentioned exemplary embodiments can be appropriately changed and combined.

[0091] While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest description so as to encompass all such modifications, equivalent structures, and functions.

Claims

1. A vapor deposition mask, comprising: A silicon substrate comprising a first region and a second region, wherein the first region has a first thickness and includes a portion provided with a plurality of through holes, and the second region is provided at an outer periphery of the first region and has a second thickness greater than the first thickness, It is characterized in that the first region and the second region are made of a silicon substrate, The silicon substrate has an inner wall constituting a step between the first region and the second region, In a plan view, the outer edge of the outermost periphery of the first region has a curved portion, and In the cross-sectional view, the inner wall has a plurality of steps, The plurality of steps include a first step and a second step, The second step is arranged closer to the first region than the first step, and An angle between a second inner wall constituting the second step and an upper surface of the silicon substrate in the first region is smaller than an angle between a first inner wall constituting the first step and an upper surface of the silicon substrate in the first region.

2. The vapor deposition mask according to claim 1, wherein: An angle between the inner wall and an upper surface of the silicon substrate in the first region is an acute angle.

3. The vapor deposition mask according to claim 1, wherein: In the plan view, the outer edge of the outermost periphery of the first region is circular.

4. The vapor deposition mask according to claim 1, wherein: In the plan view, an outer edge of the outermost periphery of the silicon substrate in the second region includes a curved portion.

5. The vapor deposition mask according to claim 1, wherein: A thickness of the silicon substrate in the second region is greater than or equal to 200 μm and less than or equal to 750 μm.

6. The vapor deposition mask according to claim 1, wherein: A thickness of the silicon substrate in the second region is greater than or equal to 300 μm and less than or equal to 800 μm.

7. A vapor deposition mask comprising: A silicon substrate comprising a first region and a second region, wherein the first region has a first thickness and includes a portion provided with a plurality of through holes, and the second region is provided at an outer periphery of the first region and has a second thickness greater than the first thickness, It is characterized in that the first region and the second region are made of a silicon substrate, The silicon substrate has an inner wall constituting a step between the first region and the second region, In a plan view, the outer edge of the outermost periphery of the first region has a curved portion, and A portion of the upper surface of the silicon substrate in the second region is lower than the upper surface of the silicon substrate in the first region, In the cross-sectional view, the inner wall has a plurality of steps, The plurality of steps include a first step and a second step, The second step is arranged closer to the first region than the first step, and An angle between a second inner wall constituting the second step and an upper surface of the silicon substrate in the first region is smaller than an angle between a first inner wall constituting the first step and an upper surface of the silicon substrate in the first region.

8. The vapor deposition mask according to claim 7, wherein: In the plan view, the outer edge of the outermost periphery of the first region is circular.

9. The vapor deposition mask according to claim 7, wherein: In the plan view, an outer edge of the outermost periphery of the silicon substrate in the second region includes a curved portion.

10. The vapor deposition mask according to claim 7, wherein: A thickness of the silicon substrate in the second region is greater than or equal to 200 μm and less than or equal to 750 μm.

11. The vapor deposition mask according to claim 7, wherein: A thickness of the silicon substrate in the second region is greater than or equal to 300 μm and less than or equal to 800 μm.

12. A vapor deposition device, characterized in that: The vapor deposition equipment comprises: A vapor deposition mask according to any one of claims 1 to 11; and A holding mechanism is configured to hold the vapor deposition mask between the vapor deposition material and the vapor deposition substrate.

13. A method for manufacturing a device using a vapor deposition mask, characterized in that: The method comprises: aligning the vapor deposition mask according to any one of claims 1 to 11 and the vapor deposition substrate with each other; and A vapor deposition material is vapor-deposited onto the vapor deposition substrate using the vapor deposition mask.

14. The method for manufacturing a device according to claim 13, wherein: The device is an organic light emitting diode.

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