Word line characteristic monitor for memory devices and associated methods and systems

Abstract

This application relates to word line characteristic monitors for memory devices and associated methods and systems. In one embodiment, the memory device includes a memory array including a word line (e.g., a local word line) and a word line driver coupled to the word line. When the memory device activates the word line driver, the memory device can generate a diagnostic signal in response to a word line voltage reaching a threshold value. Further, the memory device can generate a reference signal to compare the diagnostic signal to the reference signal. In some cases, if the diagnostic signal indicates a sign of degradation of a word line characteristic, the memory device can generate an alert signal based on comparing the diagnostic signal to the reference signal. The memory device can implement certain preventative and / or precautionary measures upon detecting the sign.

Description

Technical Field

[0001] This disclosure generally relates to semiconductor memory devices, and more particularly to word line characteristic monitors and associated methods and systems for memory devices. Background Technology

[0002] Memory devices are widely used to store information in various electronic devices, such as computers, wireless communication devices, cameras, and digital displays. Memory devices are often provided as internal semiconductor integrated circuits and / or external removable devices in computers or other electronic devices. Many different types of memory exist, including volatile and non-volatile memory. Volatile memory, including random access memory (RAM), static random access memory (SRAM), dynamic random access memory (DRAM), and synchronous dynamic random access memory (SDRAM), requires an external power supply to maintain its data. In contrast, non-volatile memory retains its stored data even without an external power supply. Non-volatile memory can be used in a wide variety of technologies, including flash memory (e.g., NAND and NOR), phase-change memory (PCM), ferroelectric random access memory (FeRAM), resistive random access memory (RRAM), and magnetic random access memory (MRAM), etc. Improvements to memory devices typically include increasing memory cell density, increasing read / write speeds or otherwise reducing operational latency, increasing reliability, increasing data retention, reducing power consumption or manufacturing costs, and other metrics. Summary of the Invention

[0003] On one hand, this application relates to an apparatus comprising: a memory array; a word line driver coupled to word lines of the memory array; and a peripheral circuitry system coupled to the memory array and the word line driver, the peripheral circuitry system being configured to: activate the word line driver; transmit a first signal in response to a voltage on the word line reaching a threshold; and transmit a second signal at least in part based on comparing the first signal with a reference.

[0004] On the other hand, this application relates to a method comprising: activating a word line driver coupled to a word line of a memory array; transmitting a first signal in response to a voltage on the word line reaching a threshold; and transmitting a second signal based at least in part on comparing the first signal with a reference.

[0005] On the other hand, this application relates to a system comprising: a host device; and a semiconductor device coupled to the host device, the semiconductor device including: a memory array; a word line driver coupled to word lines of the memory array; and a peripheral circuitry system coupled to the memory array and the word line driver, the peripheral circuitry system being configured to: activate the word line driver; transmit a first signal in response to a voltage on the word line reaching a threshold; transmit a second signal at least in part based on comparing the first signal with a reference; and send the second signal to the host device, the second signal containing an address associated with the word line. Attached Figure Description

[0006] This disclosure will be more fully understood from the detailed description given below and from the accompanying drawings of various embodiments thereof. Components in the drawings are not necessarily drawn to scale. Instead, the focus is on clearly illustrating the principles of the technology.

[0007] Figure 1 This is a block diagram illustrating a memory device according to an embodiment of the present technology.

[0008] Figure 2 This is a block diagram illustrating a word line characteristic monitor for a memory device according to an embodiment of the present technology.

[0009] Figure 3 A timing diagram illustrating the word line characteristic monitor associated with a memory device according to an embodiment of the present technology.

[0010] Figure 4 This is a block diagram schematically illustrating a word line characteristic monitor for a memory device according to an embodiment of the present technology.

[0011] Figure 5 This is a block diagram of a system having a memory device configured according to embodiments of the present technology.

[0012] Figure 6 This is a flowchart illustrating a method for operating a memory device according to an embodiment of the present technology. Detailed Implementation

[0013] As memory cells expand to increase memory density and capacity, meeting various reliability criteria for memory devices becomes increasingly challenging. Error checking and correction (ECC) functions can help mitigate some reliability issues, but they increase the overhead of overall memory system bandwidth and cost. Consequently, memory systems may exhibit reduced ECC robustness, which in turn tends to increase memory device failures within the domain. Furthermore, the challenges associated with word lines forming memory arrays in current state-of-the-art semiconductor manufacturing technologies (e.g., DRAM technology) can generate potentially inherently several anomalous defect mechanisms. Once memory devices are implemented in systems (e.g., computing systems, data center environments), these defect mechanisms can manifest as various reliability issues, which in some cases may lead to system shutdowns.

[0014] Individual word lines (rows) of a memory array are coupled to multiple memory cells (e.g., 1,024 DRAM cells) via switching transistors (e.g., the gates of metal-oxide-semiconductor (MOS) transistors). When the word line voltage is greater than the threshold voltage of the switching transistor, the memory cell is connected (“turned on”) to the corresponding bit line. Similarly, when the word line voltage is less than the threshold voltage of the switching transistor, the memory cell is not connected (“turned off”) to the corresponding bit line. Therefore, the switching characteristics of the word lines are important for the memory array. If the word line voltage turns on too slowly, the memory cells may not be able to “share” their charge with the bit line, and the sense amplifier coupled to the bit line may not be able to determine the logic state (e.g., 0 or 1) of the memory cell within a given time frame. Similarly, if the word line voltage turns off too slowly, the memory cell may not be able to turn off from the bit line fast enough, and the logic state of the memory cell may be corrupted. Such faults caused by improper word line characteristics (e.g., switching characteristics) are referred to as row faults. In some cases, row faults may be uncorrectable (e.g., exceeding ECC capability). Alternatively, row faults may be undetectable.

[0015] Several embodiments of this technology relate to monitoring word line switching characteristics of a memory array. This technology can be used to monitor and detect degradation (or signs of degradation) in word line switching characteristics, enabling memory devices containing memory arrays to implement early precautions and / or preventative measures against row failures to avoid problems during memory operation—e.g., numerous sensing failures, corrupted data, etc. Given signal propagation along word lines and stringent processing conditions, this word line switching characteristic monitoring can be performed at worst-case conditions. Precautions and / or preventative measures may include isolating portions of the memory array, deactivating (or deactivating) memory devices (where appropriate), notifying host devices coupled to the memory devices of degradation (or signs of degradation), monitoring the behavior of “weak” word lines since their degradation or signs were detected, increasing ECC robustness, etc.

[0016] refer to Figure 1 A memory device supporting embodiments of the present technology is described. References Figure 2 A more detailed description of the memory array and the scheme for monitoring word line switching characteristics is provided. Figure 3 The timing diagrams described herein illustrate the characteristics of monitoring and detecting word line switching according to embodiments of the present technology. (Refer to...) Figure 4 A more detailed description of monitoring word line switching characteristics of a memory device according to embodiments of the present technology is provided. References Figure 5 This describes a memory system comprising a memory device configured to support a word line characteristic monitor, according to embodiments of the present technology. References Figure 6 A method for describing a memory device with an operation word line characteristic monitor according to embodiments of the present technology.

[0017] Figure 1 This is a block diagram schematically illustrating a memory device 100 according to an embodiment of the present technology. The memory device 100 may include a memory cell array, such as a memory array 150. The memory array 150 may include a plurality of memory banks (e.g., Figure 1 The memory bank in the example (0-15) may contain multiple word lines (WL), multiple bit lines (BL), and multiple memory cells (e.g., m×n memory cells) arranged at the intersections of word lines (e.g., m word lines, which may also be referred to as rows) and bit lines (e.g., n bit lines, which may also be referred to as columns). Each of the multiple word lines may be coupled to a corresponding word line driver (WL driver) configured to control the voltage of the word line during memory operation.

[0018] In some embodiments, each word line in the memory array 150 is coupled to a word line voltage (WLV) monitoring component. In some embodiments, the WLV monitoring component may include a switch (e.g., an n-channel MOS transistor, a p-channel MOS transistor, a diode) that can be turned on or off in response to a WLV reaching a threshold, allowing current (i.e., a diagnostic signal) to flow. In some embodiments, the WLV monitoring component may include circuitry configured to turn on or off in response to a WLV reaching a threshold. The WLV monitoring component may generate (and / or transmit, or otherwise generate) a diagnostic signal based on the detection (and / or assessment) that a WLV has reached a threshold. Furthermore, the memory device 100 may be configured to generate a reference (or reference signal) such that a comparator (not shown) of the memory device 100 can compare the diagnostic signal with the reference signal. If the diagnostic signal indicates an indication of degradation in word line switching characteristics relative to the reference signal, the comparator may generate (and / or transmit) an alarm signal for the memory device 100. Subsequently, the memory device 100 may take certain precautions and / or preventative measures, such as notifying the host device coupled to the memory device 100.

[0019] Memory cells may contain any of several different memory media types, including capacitor, phase-change, magnetoresistive, ferroelectric, etc. In some embodiments, a portion of the memory array 150 may be configured to store ECC parity bits. The selection of word lines WL may be performed by row decoder 140, and the selection of bit lines BL may be performed by column decoder 145. Sensing amplifiers (SAMPs) may be provided for corresponding bit lines BL and connected to at least one corresponding local I / O line pair (LIOT / B), which may in turn be coupled to at least one corresponding main I / O line pair (MIOT / B) via a transmission gate (TG) that can be used as a switch. The memory array 150 may also include board lines and corresponding circuitry for managing their operation.

[0020] The memory device 100 may employ multiple external terminals, including command and address terminals coupled to a command bus and an address bus to receive command signal CMD and address signal ADDR, respectively. The memory device may further include a chip select terminal for receiving a chip select signal CS, a clock terminal for receiving clock signals CK and CKF, a data clock terminal for receiving data clock signals WCK and WCKF, data terminals DQ, RDQS, DBI (for data bus inversion function), and DMI (for data mask inversion function), and power supply terminals VDD, VSS, VDDQ, and VSSQ.

[0021] Address signals and memory address signals can be supplied externally to the command and address terminals. The address signals and memory address signals supplied to the address terminals can be transmitted to the address decoder 110 via the command / address input circuit 105. The address decoder 110 can receive address signals and supply the decoded row address signal (XADD) to the row decoder 140 (which may be referred to as the row driver), and supply the decoded column address signal (YADD) to the column decoder 145 (which may be referred to as the column driver). The address decoder 110 can also receive the memory address portion of the ADDR input and supply the decoded memory address signal (BADD) and memory address signal to both the row decoder 140 and the column decoder 145.

[0022] A command signal CMD, an address signal ADDR, and a chip select signal CS can be supplied from the memory controller to the command and address terminals. The command signal can represent various memory commands from the memory controller (e.g., refresh command, activation command, precharge command, access command, which may include read and write commands). The select signal CS can be used to select the memory device 100 in response to the command and address provided to the command and address terminals. When a valid CS signal is provided to the memory device 100, the command and address can be decoded and memory operations can be performed. The command signal CMD can be provided as an internal command signal ICMD to the command decoder 115 via the command / address input circuit 105.

[0023] Command decoder 115 may include circuitry for decoding internal command signals ICMD to generate various internal signals and commands for performing memory operations, such as row command signals for selecting word lines and column command signals for selecting bit lines. Other examples of memory operations that memory device 100 may perform based on decoding internal command signals ICMD include refresh commands (e.g., re-establishing all charge stored in individual memory cells of memory array 150), activation commands (e.g., activating rows in a particular bank for use in some subsequent access operations), or precharge commands (e.g., deactivating activated rows in a particular bank). Internal command signals may also include output and input activation commands, such as timing commands CMDCK (…). Figure 1 (Not shown in the text).

[0024] In some embodiments, the command decoder 115 may further include one or more registers 118 for tracking various counts and / or values ​​(e.g., counts of refresh commands received by the memory device 100 or counts of self-refresh operations performed by the memory) and / or for storing various operating conditions of the memory device 100 to perform certain functions, features, and modes (or test modes). Thus, in some embodiments, register 118 (or a subset of register 118) may be referred to as a mode register. Alternatively, the memory device 100 may include register 118 as a separate component other than the command decoder 115. In some embodiments, register 118 may include a multipurpose register (MPR) configured to write specialized data to and / or read specialized data from the memory device 100.

[0025] When a read command is issued to a memory bank with open rows and a column address is provided in a timely manner as part of the read command, read data can be read from the memory cell in memory array 150 specified by the row address (which may have been provided as part of the activation command identifying the open row) and the column address. The read command can be received by command decoder 115, which can provide internal commands to input / output circuitry 160, enabling read data to be output from data terminals DQ, RDQS, DBI, and DMI via read / write amplifier 155 and input / output circuitry 160 according to the RDQS clock signal. The read data can be provided at a time defined by read delay information RL, which can be programmed in memory device 100, for example, in a mode register (e.g., register 118). The read delay information RL can be defined according to the clock cycles of the CK clock signal. For example, the read delay information RL can be the number of clock cycles of the CK signal after the memory device 100 receives the read command when the associated read data is provided.

[0026] When a write command is issued to a memory bank with open rows and the column address is supplied as part of the write command in a timely manner, write data can be supplied to the data terminals DQ, DBI, and DMI according to the WCK and WCKF clock signals. The write command can be received by a command decoder 115, which can provide an internal command to the input / output circuit 160, so that the write data can be received by the data receiver in the input / output circuit 160 and supplied to the memory array 150 via the input / output circuit 160 and the read / write amplifier 155. The write data can be written to the memory cell specified by the row address and column address. The write data can be supplied to the data terminals at a time defined by the write delay WL information. The write delay WL information can be programmed in the memory device 100, for example, in a mode register (e.g., register 118). The write delay WL information can be defined according to the clock cycle of the CK clock signal. For example, the write delay WL information can be the number of clock cycles of the CK signal after the memory device 100 receives the write command when receiving the associated write data.

[0027] Power supply potentials VDD and VSS can be supplied to the power supply terminals. These power supply potentials VDD and VSS can be supplied to the internal voltage generator circuit 170. The internal voltage generator circuit 170 can generate various internal potentials VPP, VOD, VARY, VPERI, etc., based on the power supply potentials VDD and VSS. The internal potential VPP can be used in the line decoder 140, the internal potentials VOD and VARY can be used in the sense amplifier included in the memory array 150, and the internal potential VPERI can be used in many other circuit blocks.

[0028] A power supply potential VDDQ is also supplied to the power supply terminals. The power supply potential VDDQ can be supplied to the input / output circuit 160 along with the power supply potential VSS. In one embodiment of this technology, the power supply potential VDDQ can be the same potential as the power supply potential VDD. In another embodiment of this technology, the power supply potential VDDQ can be a different potential from the power supply potential VDD. However, a dedicated power supply potential VDDQ can be used in the input / output circuit 160 so that power supply noise generated by the input / output circuit 160 does not propagate to other circuit blocks.

[0029] External clock signals and complementary external clock signals can be supplied to the clock terminal and data clock terminal. External clock signals CK, CKF, WCK, and WCKF can be supplied to the clock input circuit 120. CK and CKF signals are complementary, and WCK and WCKF signals are also complementary. Complementary clock signals can have opposite clock levels and transition between opposite clock levels simultaneously. For example, when the clock signal is at a low clock level, the complementary clock signal is at a high level, and when the clock signal is at a high clock level, the complementary clock signal is at a low clock level. Furthermore, when the clock signal transitions from a low clock level to a high clock level, the complementary clock signal transitions from a high clock level to a low clock level, and vice versa.

[0030] An input buffer included in clock input circuit 120 can receive an external clock signal. For example, when enabled by the CKE signal from command decoder 115, the input buffer can receive CK and CKF signals as well as WCK and WCKF signals. Clock input circuit 120 can receive an external clock signal to generate an internal clock signal ICLK. The internal clock signal ICLK can be supplied to internal clock circuit 130. Internal clock circuit 130 can provide internal clock signals with various phase and frequency controls based on receiving the internal clock signal ICLK and the clock enable signal CKE from command decoder 115. For example, internal clock circuit 130 can include a clock path that receives the internal clock signal ICLK and provides various clock signals to command decoder 115. Figure 1(Not shown in the image). The internal clock circuit 130 can further provide input / output (I / O) clock signals. The I / O clock signals can be supplied to the input / output circuit 160 and used as timing signals to determine the output timing for reading data and the input timing for writing data. The I / O clock signals can provide I / O at multiple clock frequencies, allowing data to be output from and input to the memory device 100 at different data rates. Higher clock frequencies are desirable when high memory speed is desired. Lower clock frequencies are desirable when lower power consumption is desired. The internal clock signal ICLK can also be supplied to the timing generator 135, thus generating various internal clock signals.

[0031] The memory device 100 can be connected to any of or components of several electronic devices capable of temporarily or permanently storing information using memory. For example, the host device of the memory device 100 can be a computing device such as a desktop or portable computer, a server, a handheld device (e.g., a mobile phone, tablet computer, digital reader, digital media player), or a component thereof (e.g., a central processing unit, coprocessor, dedicated memory controller, etc.). The host device can be a networking device (e.g., a switch, router, etc.) or a recorder of digital images, audio, and / or video, a vehicle, an appliance, a toy, or any of several other products. In one embodiment, the host device can be directly connected to the memory device 100, but in other embodiments, the host device can be indirectly connected to the memory device (e.g., via a network connection or via an intermediary device).

[0032] Figure 2 This describes a memory device according to embodiments of the present technology (e.g., reference). Figure 1 A block diagram 200 of a word line characteristic monitor for a described memory device 100. Figure 200 includes a memory array 205, which may be used as a reference. Figure 1 The memory array 150 described may be an example of or include aspects thereof. Furthermore, FIG200 includes a word line decoder 210 (which may be an example of or include aspects of the row decoder 140) and a plurality of WLV monitoring components 245 (also individually identified as WLV monitoring components 245a to 245m).

[0033] Memory array 205 may include a plurality of global word lines (one of which is shown as global word line 220) and a plurality of local word lines 225 coupled to global word line 220. The local word lines may be referred to as sub-word lines. Furthermore, memory array 205 includes a plurality of bit lines 235 and memory cells 240 at each topological intersection point between local word lines 225 and bit lines 235. Memory array 205 also includes a plurality of word line drivers 230 (also individually identified as word line drivers 230a to 230m), each of which is coupled to a corresponding local word line 225. Word line drivers 230 may be configured to receive input signals 216 (also individually identified as input signals 216a to 216m) configured to activate a particular word line driver to select (e.g., drive) one of the local word lines 225. In some embodiments, word line decoder 210 may be configured to receive address signals 215 (e.g., reference...). Figure 1 The XADD described herein selects the global word line 220. Furthermore, the word line decoder 210 can also select (e.g., via input signal 216) a specific word line driver 230 to activate (e.g., select, drive, turn on, or turn off) one of the local word lines 225 based on the address signal 215.

[0034] Figure 200 depicts individual WLV monitoring components 245 coupled to corresponding local word lines 225. Each WLV monitoring component 245 may be configured to monitor changes in the voltage (e.g., WLV) of the corresponding local word line 225. In some embodiments, the WLV monitoring component 245 may include a single n-channel MOS transistor or a single p-channel MOS transistor. For example, in response to an increase in WLV reaching a first threshold (e.g., in response to an activation command executed on local word line 225), the n-channel MOS transistor (or p-channel MOS transistor) may be turned on (or off) to indicate that local word line 225 has reached the threshold. Similarly, in response to a decrease in WLV reaching another threshold (e.g., in response to a precharge command executed on local word line 225), the n-channel MOS transistor (or p-channel MOS transistor) may be turned off (or on) to indicate that local word line 225 has reached a second threshold.

[0035] In some embodiments, the WLV monitoring component 245 may be positioned at the end of local word line 225 opposite to word line driver 230 (e.g., position 250). In other words, word line driver 230 may be coupled to local word line 225 from a first end and WLV monitoring component 245 may be coupled to local word line 225 from a second end opposite to the first end. Such a position of local word line 225 (e.g., position 250 corresponding to the end of local word line 225 opposite to word line driver 230) can be considered as the worst-case position where the local word line establishes the desired WLV due to the delay associated with the propagation of a voltage signal from one end of the local word line to the other (e.g., due to the distributed RC network associated with the local word line). Therefore, from the viewpoint of voltage signal propagation, the WLV monitoring component 245 attached to the opposite end of local word line 225 (e.g., worst-case position 250) can monitor the worst-case transition of WLV.

[0036] Furthermore, given the fabrication of high-density memory arrays, forming local word lines 225 during the manufacturing process steps of the memory device including memory array 205 can correspond to one of the most challenging areas. For example, local word lines 225 can correspond to the minimum linewidth of a given process technology node. Similarly, the spacing between local word lines 225 can correspond to the minimum spacing of a process technology node. Thus, a portion of the memory array 205 including local word lines 225 can easily contain several degraded defects that may lead to degradation of word line switching characteristics and / or row failures. Therefore, from a manufacturing process technology point of view, the WLV monitoring component 245 coupled to the local word lines 225 can be considered as providing sensitive diagnostic signals related to word line switching characteristics.

[0037] Although in the foregoing examples each local word line 225 is described and illustrated as coupled at one end to a word line driver 230 and at the opposite end to a WLV monitoring component 245, the present invention is not limited thereto. For example, more than one WLV monitoring component may be coupled to a local word line 225. Furthermore, one or more WLV monitoring components may be coupled to various locations different from the opposite end. For example, specific interactions between processing conditions and memory array layout may determine the worst-case location at different locations on a local word line, rather than at the end opposite to the word line driver 230. Similarly, one or more WLV monitoring components may be coupled to various locations on a global word line. In addition, voltage monitoring components similar to WLV monitoring components may be coupled to various functional blocks of the memory device other than word lines (e.g., sensing components, row decoders, column decoders) to provide circuit health diagnostic signals.

[0038] Figure 3 Description and embodiments of the memory device according to the present technology (e.g., reference to...) Figure 1 and2 Timing diagrams 301 and 302 are associated with a word line characteristic monitor for the described memory device. Timing diagram 301 includes an example word line voltage (WLV) waveform 310 and an example diagnostic signal (or waveform) that can be generated (transmitted) by a WLV monitoring component (e.g., WLV monitoring component 245) based on the WLV waveform 310. Timing diagram 302 includes a reference signal 320, which may also be referred to as a reference (or reference waveform) that can be generated by the memory device. Furthermore, timing diagram 302 illustrates diagnostic signals (or waveforms) 325, 330, and 335 that can be generated (transmitted) by the WLV monitoring component based on the WLV waveform of the word line coupled to the WLV monitoring component.

[0039] Figure 301 illustrates the upward transition of the voltage of the word line in response to the activation of the word line driver (e.g., word line driver 230) coupled to the word line (e.g., local word line 225) by the memory device at time T0. The WLV waveform 310 may correspond to the voltage of the word line at its worst-case position (e.g., worst-case position 250). For example, the memory device may activate the word line driver 230a coupled to local word line 225a at time T0 to execute an activation command. Due to the propagation delay from word line driver 230a through the word line to worst-case position 250, the WLV at the worst-case position may begin to rise after time T0. At time T1, the WLV may reach a threshold predetermined based on several factors, such as the threshold voltage (Vt) of the switching transistor of the memory cell. T ), Influence V T Statistical analysis of process variations, etc.

[0040] A WLV monitoring component 245a coupled to a local word line 225a can be configured to determine (e.g., detect, sense) that the word line voltage reaches a threshold at time T1. The WLV monitoring component 245a can generate (or transmit) a diagnostic signal 315 in response to the word line voltage reaching the threshold. Although FIG301 depicts a diagnostic signal 315 including an upward transition generally similar to the WLV waveform 310, in other embodiments, the diagnostic signal may have a generally different appearance from the diagnostic signal 315. For example, in some embodiments, the diagnostic signal may include a downward transition at time T1. In other embodiments, the diagnostic signal may include a short current pulse at time T1. Furthermore, although the example WLV waveform is depicted as including an upward transition (e.g., in response to executing an activation command), the WLV waveform may include a downward transition, for example, in response to executing a precharge command.

[0041] In some embodiments, the memory device may generate a reference signal 320 as depicted in timing diagram 302 in conjunction with a reference component of the memory device, such that the memory device can compare the diagnostic signal generated by the WLV monitoring component. Reference signal 320 may include signals denoted as "D".REF The reference duration and reference transition 322, and other characteristics. Reference duration D REF This can correspond to a predetermined time period during which a word line (e.g., local word line 225a) is expected to reach a threshold in response to the memory device activating a word line driver (e.g., word line driver 230a) coupled to the word line at time T0. For example, if the local word line reaches a threshold during a reference duration D... REF Or earlier than the reference duration D REF In its worst-case position (e.g., reference) Figure 2 If the threshold is reached at the described position 205, then the local word line is considered to meet the timing requirements associated with a command (e.g., activation command, precharge command) of the activated word line driver. Furthermore, the reference transition 322 may correspond to a transition in the voltage waveform, such as an upward transition in voltage as depicted in reference signal 320. Alternatively, in some embodiments, the transition in reference waveform 310 may be a downward transition (not shown).

[0042] Diagnostic signals 325, 330, and 335 may be generated (transmitted) by a WLV monitoring component (e.g., WLV monitoring component 245) coupled to the corresponding word line at their worst-case position (e.g., worst-case position 250). Furthermore, diagnostic signals 325, 330, and 335 each include transitions 327, 332, and 337, respectively. Transitions 327, 332, and 337 may correspond to the voltage of the respective word line reaching a threshold, as described with reference to timing diagram 301.

[0043] For example, diagnostic signal 325 includes a transition 327 at time Ta, the transition corresponding to a voltage on a word line (e.g., word line 225a) reaching a threshold (e.g., at its worst-case position 250) in response to activation of a word line driver (e.g., word line driver 230a) coupled to the word line at time T0. In this example, the memory device can determine that the word line is "healthy" (e.g., capable of meeting the timing requirements associated with a command pointing to the word line) by comparing reference signal 320 with diagnostic signal 325. That is, the memory device can determine that the duration associated with diagnostic signal 325 (e.g., the duration between T0 and Ta) is longer than the reference duration D. REF Small time quantity Δ1. Alternatively, the memory device may determine the transition 327 of the diagnostic signal 325 at time Ta compared to that at time T. R The reference change 322 lead time Δ1.

[0044] Similarly, diagnostic signal 330 includes a transition 332 at time Tb, the transition corresponding to a voltage on a word line (e.g., word line 225b) reaching a threshold (e.g., at its worst position 250) in response to activation of a word line driver (e.g., word line driver 230b) coupled to the word line at time T0. In this example, the memory device may determine that the word line is "unhealthy" (e.g., may be unable to meet timing requirements associated with a command pointing to the word line) or otherwise demonstrate signs of degradation (e.g., can meet current timing requirements, but may benefit from preventative and / or safeguard measures against potential future line failures) by comparing reference signal 320 with diagnostic signal 330. At this point, the memory device may determine that the duration associated with diagnostic signal 330 (e.g., the duration between T0 and Tb) is longer than the reference duration D. REF Large time quantity Δ2. Alternatively, the memory device may determine the transition 332 of the diagnostic signal 330 at time Tb compared to that at time T. R The reference transition 322 lag time Δ2.

[0045] In some embodiments, the memory device may generate (and / or transmit) an alarm signal based on comparing a diagnostic signal with a reference signal (e.g., if the diagnostic signal contains a duration greater than a reference duration and / or a transition lagging behind a reference transition). Furthermore, in response to generating the alarm signal, the memory device may store the address associated with the word line in a register of the memory device (e.g., a reference register). Figure 1 The memory device may replace the address with a different address of the memory array (e.g., memory array 150, memory array 205) in response to receiving an access command containing the address from a host device coupled to the memory device. In some embodiments, the memory device may determine whether its ECC engine (or component) has detected at least one error in the data associated with the address in response to executing the access command containing the address. In some embodiments, the memory device may send an alarm signal to (or otherwise notify) the host device coupled to the memory device, the alarm signal containing the address associated with the word line.

[0046] In some embodiments, the memory device may be configured to organize preventative and / or defensive measures into multi-tiered measures (or responses) based on the degree of degradation detected by the memory device. For example, if the memory device determines that the degradation corresponds to a time amount Δ2 (e.g., time Tb is earlier than a predetermined time T), CRITIf the memory device detects an error in the data associated with the address after executing an access command containing the address, then the memory device can begin monitoring whether its ECC engine (or components) detects at least one error. Furthermore, the memory device determines that the degradation corresponds to a time amount Δ3 (e.g., time Tc is later than time T). CRIT The memory device may, in response to receiving an access command containing the address, replace the address with a different address in the memory array, send an alarm signal to a host device coupled to the memory device, or otherwise notify the host device of a potential problem associated with the word line.

[0047] In some embodiments, the memory device may be configured to determine which word line of the memory array has the most degraded word line. For example, the memory device may perform a refresh operation or an error checking and cleanup (ECS) operation. Such operations typically involve accessing (e.g., activating and deactivating word line drivers) a word line of the memory array and provide the memory device with an opportunity to assess the "health" of the word line of the memory array. As an example, diagnostic signal 335 includes a transition 337 at time Tc, the transition corresponding to a voltage on the word line (e.g., word line 225m) reaching a threshold (e.g., at its worst-case position 250) in response to activation of the word line driver (e.g., word line driver 230m) coupled to the word line at time T0. The memory device may determine that the duration associated with diagnostic signal 335 (e.g., the duration between T0 and Tc) is greater than a reference duration D. REF Furthermore, the duration is greater than any of the durations associated with other word lines of the memory array (e.g., word line 225a, word line 225b). Alternatively, the memory device may determine that the transition 337 of the diagnostic signal 335 at time Tc lags behind that at time T... R The reference transition 322, and it can be determined that transition 337 occurs later than any of the transitions associated with other local word lines (word line 225a, word line 225b) of the memory array.

[0048] Figure 4 This is an illustrative description of a memory device according to an embodiment of the present technology (e.g., reference 1). Figures 1 to 3Figure 400 is a block diagram 400 of a word line characteristic monitor for a memory device described. Figure 400 includes a memory array 405 (which may be an example of memory array 150 and / or memory array 205 or includes aspects of memory array 150 and / or memory array 205). For example, memory array 405 illustrates a global word line 220, local word lines 225 (one of which is depicted as local word line 225a), and word line drivers 230 (one of which is depicted as word line driver 230a coupled to local word line 225a). Figure 400 further includes a peripheral circuitry system 410 (which may be considered as a WLV monitoring component 245a coupled to local word line 225a in a worst-case location), a reference component 420 (which may be referred to as a reference signal / waveform component configured to generate a voltage reference and / or current reference), a comparator 430, a register 440 (which may be an example of register 118 or includes aspects of register 118), an ECC component 445, and so on.

[0049] As shown in Figure 400, the peripheral circuitry 410 can be coupled to the memory array 405 and the word line driver 230. Furthermore, the peripheral circuitry 410 can be configured to activate the word line driver (e.g., word line driver 230a) and, in response to a word line voltage of local word line 225a reaching a threshold, use the WLV monitoring component 245a to generate (and / or transmit) a diagnostic signal 415 (e.g., a first signal). In some cases, the peripheral circuitry 410 can combine with the reference component 420 to generate a reference signal 425 (e.g., a reference...). Figure 3 The reference signal 320 described herein enables the peripheral circuitry 410 to, in some cases, compare the diagnostic signal 415 with the reference signal 425 using the comparator 430. Subsequently, the peripheral circuitry 410 may, in some cases, generate (and / or transmit) an alarm signal 435 (e.g., a second signal) based on the comparison of the diagnostic signal 415 with the reference signal 425 using the comparator 430. For example, if the diagnostic signal 415 contains a duration longer than the reference duration and / or a transition lagging behind the reference transition, then the peripheral circuitry 410 may generate the alarm signal 435.

[0050] In some cases, the peripheral circuitry 410 may activate the word line driver in response to receiving an access command (e.g., read command, write command) pointing to a word line (e.g., local word line 225a) from a host device coupled to the memory device. In some cases, the peripheral circuitry 410 may activate the word line driver in response to initiating a refresh operation pointing to the word line. In some cases, the peripheral circuitry 410 may activate the word line driver in response to initiating an ECS operation pointing to the word line.

[0051] A refresh operation may be initiated in response to a refresh command issued to the memory device or may be self-triggered by the memory device (e.g., to mitigate row hammering problems). A refresh operation may include an operation to activate (enable) a row of the memory array (e.g., an activation command) and another operation to deactivate the activated memory row (e.g., a precharge command). Furthermore, the memory device may perform a refresh operation on every row of the memory array. Thus, a refresh operation can provide the memory device with an opportunity to evaluate the word line switching characteristics of the entire memory array. In this way, the memory device can determine which row of the memory array is most susceptible to row failure (e.g., due to degradation of word line switching characteristics).

[0052] Similarly, ECS operation provides another opportunity for the memory device to evaluate the word line switching characteristics of the rows of the memory array. ECS operation can read data from each row (e.g., execute an activation command) and store the data back to the row (after correcting certain errors if some errors are detected in the data) and deactivate the enabled row (e.g., execute a precharge command). Therefore, during refresh operations and / or ECS operations, the peripheral circuitry 410 can monitor the health of the rows (e.g., local word lines 225) of the memory array 405 and determine which local word line has the greatest degradation, such as being prone to row failure problems due to degraded word line switching characteristics.

[0053] Reference component 420 may be coupled to and configured with peripheral circuitry 410 as shown in Figure 400 to generate reference signal 425. Reference signal 425 may include one or more predetermined parameters, such as a reference duration (e.g., reference...). Figure 3 Description of D REF The peripheral circuitry 410 may determine, when comparing the diagnostic signal 415 with the reference signal 425, that the duration associated with the diagnostic signal 415 is greater than the reference duration, wherein the duration corresponds to the time period between the activation of the word line driver (e.g., word line driver 230a) and the word line voltage reaching a threshold. Alternatively, the peripheral circuitry 410 may determine, when comparing the diagnostic signal 415 with the reference signal 425, that the transition of the diagnostic signal 415 lags behind the reference transition, wherein the transition of the diagnostic signal is associated with the word line voltage reaching a threshold.

[0054] In some embodiments, the peripheral circuitry 410 may, in response to generating an alarm signal 435 (e.g., if the diagnostic signal 415 includes a duration greater than the reference duration of the reference signal 425 and / or if the diagnostic signal 415 includes a reference transition that lags behind the reference signal 425), store the address associated with the word line in a register 440 coupled to the peripheral circuitry 410. Furthermore, the peripheral circuitry 410 may, in response to receiving an access command containing the address from a host device coupled to the memory device, replace the address with a different address of the memory array 405. Alternatively, the peripheral circuitry 410 may, in response to executing an access command containing the address, determine whether the ECC component 445 of the memory device has detected at least one error in the data associated with the address. Alternatively, the peripheral circuitry 410 may send an alarm signal 435 to a host device coupled to the memory device (e.g., via a signal 450 to the host), wherein the alarm signal contains the address associated with the word line.

[0055] Figure 5 This is a block diagram of a system 501 having a memory device 500 configured according to an embodiment of the present technology. The memory device 500 may be a reference. Figures 1 to 4 Examples of memory devices described may include aspects thereof. As shown, memory device 500 includes main memory 502 (e.g., DRAM, NAND flash memory, NOR flash memory, FeRAM, PCM, etc.) and control circuitry 506 (e.g., upstream central processing unit (CPU), memory controller) operatively coupled to host device 508. Control circuitry 506 may include references to... Figures 1 to 4 The various components described. For example, the control circuit system 506 may include aspects such as command / address input circuit 105, address decoder 110, command decoder 115, word line decoder 210, WLV monitoring component 245, peripheral circuit system 410, reference component 420, comparator 430, etc.

[0056] Main memory 502 includes a plurality of memory components 520, each of which includes a plurality of memory cells (e.g., memory cells 240). Memory components 520 may be individual memory dies, memory planes within a single memory die, stacks of memory dies perpendicularly connected to a through-silicon via (TSV), etc. For example, in one embodiment, each of the memory components 520 may be formed from a semiconductor die and disposed in a single device package along with other memory component dies. In other embodiments, the plurality of memory components 520 may be distributed via co-location on a single die and / or across multiple device packages. In some embodiments, the memory components 520 may also be subdivided into memory regions 528 (e.g., memory banks, rows, channels, blocks, pages, etc.).

[0057] Memory cells may include, for example, floating gates, charge traps, phase transitions, capacitors, ferroelectrics, magnetoresistance, and / or other suitable storage elements configured for persistent or semi-persistent data storage. Main memory 502 and / or individual memory units 520 may also include other circuit components, such as multiplexers, decoders, buffers, read / write drivers, address registers, data output / data input registers, etc., for accessing and / or programming (e.g., writing) memory cells and other functions, such as processing information and / or communicating with control circuitry 506 or host device 508. Although shown in the illustrated embodiments for illustrative purposes as having a certain number of memory cells, rows, columns, areas, and memory units, the number of memory cells, rows, columns, areas, and memory units may vary, and in other embodiments, may be larger or smaller in scale than shown in the illustrated examples. For example, in some embodiments, memory device 500 may include only one memory unit 520. Alternatively, the memory device 500 may include two, three, four, eight, ten, or more (e.g., 16, 32, 64, or more) memory units 520. Although the memory units 520 are... Figure 5 Each of the memory components 520 is shown to contain four memory regions 528, but in other embodiments, each memory component 520 may contain one, two, three, eight or more (e.g., 16, 32, 64, 100, 128, 256 or more) memory regions.

[0058] In one embodiment, the control circuitry 506 may be located on the same die as the main memory 502 (e.g., including command / address / clock input circuitry, decoders, voltage and timing generators, input / output circuitry, etc.). In another embodiment, the control circuitry 506 may be a microcontroller, a special-purpose logic circuitry (e.g., a field-programmable gate array (FPGA), an application-specific integrated circuit (ASIC), a control circuitry on the memory die, etc.), or other suitable processor. In one embodiment, the control circuitry 506 may include a processor configured to execute instructions stored in memory to perform various processes, logic flows, and routines for controlling the operation of the memory device 500, including managing the main memory 502 and handling communication between the memory device 500 and the host device 508. In some embodiments, the control circuitry 506 may include an embedded memory having memory registers for storing, for example, memory addresses, row counters, bank counters, memory pointers, fetch data, etc. In another embodiment of this technology, the memory device 500 may not include a control circuit system, but may rely on external control (e.g., provided by the host device 508, or by a processor or controller separate from the memory device 500).

[0059] Host device 508 may be any of several electronic devices or components thereof capable of temporarily or permanently storing information using memory. For example, host device 508 may be a computing device such as a desktop or portable computer, a server, a handheld device (e.g., a mobile phone, tablet computer, digital reader, digital media player), or a component thereof (e.g., a central processing unit, coprocessor, dedicated memory controller, etc.). Host device 508 may be a networking device (e.g., a switch, router, etc.) or a recorder of digital images, audio, and / or video, a vehicle, an appliance, a toy, or several other products. In one embodiment, host device 508 may be directly connected to memory device 500, but in other embodiments, host device 508 may be indirectly connected to memory device (e.g., via a network connection or via an intermediary device).

[0060] In operation, the control circuitry 506 can directly write to or otherwise program (e.g., erase) the various memory areas of the main memory 502. The control circuitry 506 communicates with the host device 508 via a host device bus or interface 510. In some embodiments, the host device 508 and the control circuitry 506 can communicate via a dedicated memory bus (e.g., a DRAM bus). In other embodiments, the host device 508 and the control circuitry 506 can communicate via a serial interface, such as a Serial Attached SCSI (SAS), Serial AT Attached (SATA), Peripheral Component Interconnect High Speed ​​(PCIe), or other suitable interfaces (e.g., a parallel interface). The host device 508 can send various requests (in the form of packets or packet streams, for example) to the control circuitry 506. Requests may include commands to read, write, erase, return information, and / or perform specific operations (e.g., refresh operations, TRIM operations, precharge operations, activation operations, wear leveling operations, discarded item collection operations, etc.).

[0061] In some embodiments, memory device 500 includes a memory array (e.g., main memory 502) with word lines. Furthermore, memory device 500 may include word line drivers coupled to the word lines. Additionally, memory device 500 may include peripheral circuitry (e.g., control circuitry 506) coupled to the memory array and word line drivers. The peripheral circuitry may be configured to activate the word line drivers and generate diagnostic signals using word line voltage monitoring components (e.g., WLV monitoring component 245) in response to word line voltage reaching a threshold. Furthermore, the peripheral circuitry may be configured to compare the diagnostic signals with a reference signal. In some cases, the peripheral circuitry may generate an alarm signal based on the comparison of the diagnostic signal with the reference signal and send the alarm signal to host device 508 (e.g., via host device bus or interface 510). The alarm signal may include an address associated with the word line and / or notify host device 508 of other indications of degradation associated with word line characteristics (e.g., word line switching characteristics).

[0062] In some embodiments, the host device 508 may be configured to transmit an access command to the address in response to receiving an alarm signal containing the address. Furthermore, the host device 508 may be configured to monitor whether the ECC engine 515 of the memory device 500 detects at least one error in the data associated with the address in response to executing the access command. In some embodiments, in response to receiving an alarm signal containing the address, the host device 508 is configured to perform at least one of the following: disable the address when an access command to the memory device 500 is generated; deactivate a portion of the memory array containing the address; or disable access operations to the memory device 500.

[0063] Figure 6 This is a flowchart 600 illustrating a method of operating a memory device according to an embodiment of the present technology. Flowchart 600 may be a memory device (e.g., peripheral circuitry 410, control circuitry 506), as can be seen from... Figures 1 to 5 An instance of the method described in that way, or an aspect thereof.

[0064] The method includes activating word line drivers (block 610) coupled to word lines of the memory array. According to one aspect of the art, the activation feature of block 610 may be performed by peripheral circuitry 410 (or control circuitry 506), as referenced... Figures 1 to 5 As described.

[0065] The method further includes transmitting a first signal (block 615) in response to a voltage on the word line reaching a threshold. According to one aspect of the art, the transmission feature of block 615 may be performed by peripheral circuitry 410 (or control circuitry 506), as referenced... Figures 1 to 5 As described.

[0066] The method further includes transmitting a second signal (block 620) at least in part based on comparing a first signal with a reference. According to one aspect of the art, the transmission characteristics of block 620 may be performed by peripheral circuitry 410 (or control circuitry 506), such as a reference. Figures 1 to 5 As described.

[0067] In some embodiments, activating the word line driver may, in response to receiving an access command to a word line from a host device coupled to a device containing a memory array, initiate a refresh operation to the word line or an error checking and cleanup (ECS) operation to the word line. In some embodiments, a reference is included to a reference transition comprising a voltage waveform, and comparing the first signal to the reference further includes determining that a transition of the first signal lags behind a reference transition, wherein the transition of the first signal is associated with the word line voltage reaching a threshold. In some embodiments, a reference is included to a reference duration, and comparing the first signal to the reference further includes determining that a duration associated with the first signal is greater than a reference duration, wherein the duration corresponds to a time period between activating the word line driver and the word line voltage reaching the threshold.

[0068] In some embodiments, the memory array is configured to include a global word line and a plurality of local word lines coupled to the global word line, wherein the word line is a first local word line among the plurality of local word lines, a word line driver is a first word line driver configured to drive the first local word line from a first end of the first local word line, and a first word line voltage monitoring component is coupled to a second end of the first local word line opposite to the first end. In some embodiments, the method may further include, in response to generating a second signal, storing an address associated with the word line in a register of a device including the memory array, and performing at least one of the following: replacing the address with a different address in response to receiving an access command containing the address from a host device coupled to the device; determining whether the device's ECC engine has detected at least one error in the data associated with the address in response to executing the access command containing the address; or sending a second signal to the host device, the second signal containing the address associated with the word line.

[0069] It should be noted that the methods described above describe possible implementations, and the operations and steps can be rearranged or otherwise modified, and other implementations are also possible. Furthermore, embodiments from two or more methods can be combined.

[0070] The information and signals described herein can be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips referenced throughout the foregoing description can be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof. Some figures may illustrate signals as single signals; however, those skilled in the art will understand that signals can represent signal buses, which may have various bit widths.

[0071] The devices discussed herein include memory devices that can be formed on a semiconductor substrate or die, such as silicon, germanium, silicon-germanium alloys, gallium arsenide, gallium nitride, etc. In some cases, the substrate is a semiconductor wafer. In others, the substrate may be a silicon-on-insulator (SOI) substrate, such as silicon-on-glass (SOG) or silicon-on-sapphire (SOP), or an epitaxial layer of semiconductor material on another substrate. The conductivity of the substrate or subregions of the substrate can be controlled by doping with various chemical species, including but not limited to phosphorus, boron, or arsenic. Doping can be performed during the initial formation or growth of the substrate by ion implantation or by any other doping method.

[0072] The functionality described herein may be implemented in hardware, software executed by a processor, firmware, or any combination thereof. Other examples and implementations are within the scope of this disclosure and the appended claims. Features implementing the functionality may also be physically located at various locations, including distribution such that portions of the functionality are implemented at different physical locations.

[0073] As used herein, the word "or" as used in the claims, such as in a list of items (e.g., a list of items beginning with phrases such as "at least one of..." or "one or more of..."), indicates a list of inclusion, such that a list of at least one of, for example, A, B, or C represents A or B or C or AB or AC or BC or ABC (i.e., A and B and C). Furthermore, as used herein, the phrase "based on" should not be construed as a reference to a closed set of conditions. For example, an exemplary step described as "based on condition A" may be based on both condition A and condition B without departing from the scope of this disclosure. In other words, as used herein, the phrase "based on" should be interpreted in the same manner as the phrase "at least partially based on".

[0074] As will be understood from the foregoing, specific embodiments of the invention have been described herein for illustrative purposes, but various modifications may be made without departing from the scope of the invention. Rather, numerous specific details are set forth in the foregoing description to provide a thorough and practicable description of embodiments of the present technology. However, those skilled in the art will recognize that this disclosure may be practiced without one or more of the stated specific details. In other instances, well-known structures or operations commonly associated with memory systems and apparatuses have not been shown or described in detail to avoid obscuring other aspects of the present technology. Generally, it should be understood that various other apparatuses, systems, and methods besides those specific embodiments disclosed herein are within the scope of the present technology.

Claims

1. A memory device comprising: Memory array; Word line drivers, which are coupled to word lines of the memory array; and Peripheral circuitry, coupled to the memory array and the word line driver, is configured to: Activate the word line driver; The first signal is transmitted in response to the word line voltage reaching a threshold. and The second signal is transmitted, at least in part, based on comparing the first signal with a reference. The first signal is a diagnostic signal, the second signal is an alarm signal, and the reference includes one or more predetermined parameters having a reference duration, a reference transition of voltage waveform, or both.

2. The memory device of claim 1, wherein the peripheral circuitry is configured to activate the word line driver in response to: Receive an access command directed to the word line from a host device coupled to the memory device; Initiate a refresh operation pointing to the aforementioned word line; or Initiate error checking and cleanup ECS operations pointing to the word line.

3. The memory device according to claim 1, further comprising: A reference component coupled to the peripheral circuit system, the reference component being configured to generate the reference.

4. The memory device of claim 1, wherein the reference includes the reference duration, and the peripheral circuitry is configured to: When comparing the first signal with the reference, it is determined that the duration associated with the first signal is greater than the reference duration, wherein the duration corresponds to the time period between activating the word line driver and the word line voltage reaching the threshold.

5. The memory device of claim 1, wherein the reference includes the reference transition of the voltage waveform, and the peripheral circuitry is configured to: When comparing the first signal with the reference, it is determined that the transition of the first signal lags behind the transition of the reference, wherein the transition of the first signal is associated with the word line voltage reaching the threshold.

6. The memory device of claim 1, wherein the memory array is configured to include a global word line and a plurality of local word lines coupled to the global word line, and wherein: The word line is the first local word line among the plurality of local word lines; The word line driver is a first word line driver configured to drive the first local word line from a first end of the first local word line; and The first word line voltage monitoring component of the peripheral circuit system is coupled to the second end of the first local word line opposite to the first end, and the first word line voltage monitoring component is configured to generate the first signal.

7. The memory device of claim 6, wherein the reference includes the reference duration, and the peripheral circuitry is configured to: Determine that the duration associated with the first signal is greater than the reference duration, wherein the duration corresponds to the time period between activating the first word line driver and the voltage of the first local word line reaching the threshold; and The duration is determined to be greater than any of the durations associated with other local word lines among the plurality of local word lines.

8. The memory device of claim 6, wherein the reference includes the reference transition of the voltage waveform, and the peripheral circuitry is configured to: Determine that the transition of the first signal lags behind the reference transition, wherein the transition of the first signal is associated with the voltage of the first local word line reaching the threshold; and The transition is determined to occur later than any of the transitions associated with other local word lines among the plurality of local word lines.

9. The memory device of claim 1, wherein the peripheral circuitry is further configured to: In response to generating the second signal, the address associated with the word line is stored in a register of the memory device; and In response to receiving an access command containing the address from a host device coupled to the memory device, the address is replaced with a different address of the memory array.

10. The memory device of claim 1, wherein the peripheral circuitry is further configured to: In response to generating the second signal, the address associated with the word line is stored in a register of the memory device; and In response to executing an access command containing the address, determine whether the error checking and correction ECC engine of the memory device has detected at least one error in the data associated with the address.

11. The memory device of claim 1, wherein the peripheral circuitry is further configured to: In response to generating the second signal, the address associated with the word line is stored in a register of the memory device; and The second signal is sent to a host device coupled to the memory device, the second signal containing the address associated with the word line.

12. A method performed by a device comprising a memory array, comprising: Activate the word line driver coupled to the word line of the memory array; The first signal is transmitted in response to the word line voltage reaching a threshold. and The second signal is transmitted, at least in part, based on comparing the first signal with a reference. The first signal is a diagnostic signal, the second signal is an alarm signal, and the reference includes one or more predetermined parameters having a reference duration, a reference transition of voltage waveform, or both.

13. The method of claim 12, wherein activating the word line driver is in response to: Receives an access command to the word line from a host device coupled to the device containing the memory array; Initiate a refresh operation pointing to the aforementioned word line; or Initiate error checking and cleanup ECS operations pointing to the word line.

14. The method of claim 12, wherein the reference comprises the reference transition of the voltage waveform, and comparing the first signal with the reference further comprises: The transition of the first signal is determined to lag behind the reference transition, wherein the transition of the first signal is associated with the word line voltage reaching the threshold.

15. The method of claim 12, wherein the reference includes the reference duration, and comparing the first signal with the reference further comprises: The duration associated with the first signal is determined to be greater than the reference duration, wherein the duration corresponds to the time period between activating the word line driver and the word line voltage reaching the threshold.

16. The method of claim 12, wherein the memory array is configured to include a global word line and a plurality of local word lines coupled to the global word line, and wherein: The word line is the first local word line among the plurality of local word lines; The word line driver is a first word line driver configured to drive the first local word line from a first end of the first local word line. and The first word line voltage monitoring component is coupled to the second end of the first local word line opposite to the first end.

17. The method of claim 12, further comprising: In response to generating the second signal, the address associated with the word line is stored in a register of the device containing the memory array; and Perform at least one of the following: In response to receiving an access command containing the address from a host device coupled to the device, the address is replaced with a different address; In response to executing an access command containing the address, determine whether the device's error checking and correction ECC engine has detected at least one error in the data associated with the address; or The second signal is sent to the host device, the second signal containing the address associated with the word line.

18. A system for memory operations, comprising: Main unit; and A semiconductor device coupled to the host device, the semiconductor device comprising: Memory array; A word line driver, coupled to the word lines of the memory array; and Peripheral circuitry, coupled to the memory array and the word line driver, is configured to: Activate the word line driver; A first signal is transmitted in response to the voltage of the word line reaching a threshold. The second signal is transmitted at least in part based on comparing the first signal with a reference; and The second signal is sent to the host device, the second signal containing the address associated with the word line. The first signal is a diagnostic signal, the second signal is an alarm signal, and the reference includes one or more predetermined parameters having a reference duration, a reference transition of voltage waveform, or both.

19. The system of claim 18, wherein the host device is configured to: In response to receiving the second signal containing the address, an access command to the address is transmitted; and In response to the execution of the access command, the error checking and correction (ECC) engine of the semiconductor device detects at least one error in the data associated with the address.

20. The system of claim 18, wherein in response to receiving the second signal containing the address, the host device is configured to perform at least one of the following: The address is disabled when an access command to the semiconductor device is generated. Deactivate a portion of the memory array containing the address; or Access operations to the semiconductor device are prohibited.

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