Semiconductor module

Abstract

The semiconductor module (10) of the present application is provided with a plurality of semiconductor elements, a resin molded member (120), and a plurality of conductive members, the plurality of semiconductor elements are provided with a gate electrode, a first electrode, and a second electrode, the plurality of conductive members include: a common wiring electrode (111) that is exposed from the resin molded member on the upper surface side or the lower surface side of the semiconductor module and is electrically connected to at least either one of the first electrode and the second electrode; and non-common wiring electrodes (101-104) that are exposed from the resin molded member and are electrically connected to electrodes of the semiconductor elements other than the common wiring electrode, the wiring width of the common electrode connected to the common wiring electrode is wider than the wiring width of the non-common wiring electrodes, and the plurality of semiconductor elements and the plurality of conductive members are arranged so that, in the case where the common wiring is connected to the common wiring electrode, the common wiring can be provided from one side to the other side of the surface of the resin molded member exposed from the common wiring electrode without being electrically connected to the non-common wiring electrodes.

Description

[0001] Cross-references to related applications

[0002] This application is based on Japanese Application No. 2019-181704 filed on October 1, 2019, and Japanese Application No. 2020-160930 filed on September 25, 2020, the contents of which are incorporated herein by reference. Technical Field

[0003] This invention relates to a semiconductor module comprising multiple semiconductor elements. Background Technology

[0004] Patent Document 1 describes a semiconductor module comprising six semiconductor elements housed in a resin molded part. In this semiconductor module, the six semiconductor elements are power transistors, functioning as switching elements on the upper or lower arms of the U, V, and W phases.

[0005] Patent Document 1: Japanese Patent Application Publication No. 2017-152727

[0006] In Patent Document 1, wiring is led out along the planar direction on the lateral side of the semiconductor elements to connect three semiconductor elements, and the semiconductor elements are connected on this lateral side. Therefore, in the mounting substrate for mounting semiconductor modules, space needs to be ensured on the lateral side of the semiconductor modules for wiring to connect the semiconductor modules to each other. Ensuring this space will hinder the miniaturization of the mounting substrate. Summary of the Invention

[0007] In view of the above, the purpose of this disclosure is to provide a technique that can reduce the wiring space on the lateral side of a semiconductor module.

[0008] This disclosure provides a semiconductor module comprising a plurality of semiconductor elements, a resin molding integrally sealing the plurality of semiconductor elements, and a plurality of conductive components electrically connected to at least one of the plurality of semiconductor elements. In this semiconductor module, the semiconductor elements are insulated-gate semiconductor elements having a gate electrode, a first electrode, and a second electrode, wherein charge carriers move from the first electrode side to the second electrode side of the semiconductor element via a channel formed by applying a voltage to the gate electrode. The plurality of conductive components include: a common wiring electrode exposed from the resin molding on the upper or lower surface side of the semiconductor module, electrically connected to at least one of the first electrode and the second electrode; and a non-common wiring electrode exposed from the resin molding and electrically connected to an electrode of the semiconductor element different from the common wiring electrode, wherein the wiring width of the common wiring connected to the common wiring electrode is wider than the wiring width of the non-common wiring electrode. The aforementioned plurality of semiconductor elements and the aforementioned plurality of conductive components are configured so that, when the aforementioned common wiring is connected to the aforementioned common wiring electrode, the aforementioned common wiring can be provided from one opposite side to the other side of the surface of the aforementioned resin molded part exposed by the aforementioned common wiring electrode without being electrically connected to the aforementioned non-common wiring electrode.

[0009] According to this disclosure, a semiconductor module includes a common wiring electrode exposed from a resin molding on its upper or lower surface side, and a non-common wiring electrode connected to an electrode of a semiconductor element different from the common wiring electrode. Furthermore, multiple semiconductor elements and multiple conductive components are arranged so that, when the common wiring is connected to the common wiring electrode, the common wiring can be provided from one opposite side to the other on the surface of the resin molding exposed by the common wiring electrode without being electrically connected to the non-common wiring electrode. Therefore, for example, by arranging multiple semiconductor modules according to this disclosure adjacently and connecting their common wiring electrodes to each other via the common wiring, multiple semiconductor modules can be electrically connected to each other in the vertical direction of the semiconductor module. As a result, the wiring space on the lateral side of the semiconductor module can be reduced, which helps to miniaturize the mounting substrate. Additionally, wiring led to the lateral side of the semiconductor module for connecting multiple semiconductor elements can be omitted. As a result, the wiring area is reduced and the wiring resistance is reduced, suppressing heat generation from the wiring. Attached Figure Description

[0010] The above-mentioned objects, as well as other objects, features, and advantages of this disclosure, become clearer from the following detailed description with reference to the accompanying drawings. The accompanying drawings are as follows:

[0011] Figure 1 This is a top view showing the semiconductor module according to the first embodiment.

[0012] Figure 2 It is shown in Figure 1 The diagram shows a top view of the semiconductor module after the resin molding parts have been removed.

[0013] Figure 3 yes Figure 2 Sectional view along line III-III,

[0014] Figure 4 yes Figure 2 Sectional view along line IV-IV,

[0015] Figure 5 It is Figure 1 The diagram shows a series of semiconductor modules arranged and configured.

[0016] Figure 6 It is shown Figure 1 The diagram shows a cross-sectional view of the semiconductor components in the semiconductor module.

[0017] Figure 7 This is a schematic diagram of an electric power steering system using the semiconductor module described in the first embodiment.

[0018] Figure 8 This shows that it can be applied. Figure 1 The diagram shows the drive circuit of the electric power steering system using a semiconductor module.

[0019] Figure 9 This is a top view showing the semiconductor module involved in the modified example.

[0020] Figure 10 This is a top view showing the semiconductor module involved in the modified example.

[0021] Figure 11 This is a top view showing the semiconductor module involved in the modified example.

[0022] Figure 12 This is a top view showing the semiconductor module according to the second embodiment.

[0023] Figure 13 It is shown in Figure 12 The diagram shows a top view of the semiconductor module after the resin molding parts have been removed.

[0024] Figure 14 yes Figure 13 Sectional view along line XIV-XIV,

[0025] Figure 15 yes Figure 13 XV-XV line sectional view,

[0026] Figure 16 It is Figure 12The diagram shows a series of semiconductor modules arranged and configured.

[0027] Figure 17 This is a top view showing the semiconductor module involved in the modified example.

[0028] Figure 18 This is a top view showing the semiconductor module involved in the modified example.

[0029] Figure 19 This is a top view showing the semiconductor module involved in the modified example.

[0030] Figure 20 This is a top view showing the semiconductor module according to the third embodiment.

[0031] Figure 21 It is shown in Figure 20 The diagram shows a top view of the semiconductor module after the resin molding parts have been removed.

[0032] Figure 22 yes Figure 21 Sectional view along line XXII-XXII,

[0033] Figure 23 yes Figure 21 Sectional view along line XXIII-XXIII,

[0034] Figure 24 It is Figure 20 The diagram shows a series of semiconductor modules arranged and configured.

[0035] Figure 25 This is a top view showing the semiconductor module involved in the modified example.

[0036] Figure 26 This is a top view showing the semiconductor module involved in the modified example.

[0037] Figure 27 This is a top view showing the semiconductor module involved in the modified example.

[0038] Figure 28 This is a top view showing the semiconductor module according to the fourth embodiment.

[0039] Figure 29 It is shown in Figure 28 The diagram shows a top view of the semiconductor module after the resin molding parts have been removed.

[0040] Figure 30 yes Figure 29 Sectional view along line XXX-XXX,

[0041] Figure 31 It is Figure 28The diagram shows a series of semiconductor modules arranged and configured.

[0042] Figure 32 This is a top view showing the semiconductor module according to the fifth embodiment.

[0043] Figure 33 It is shown in Figure 32 The diagram shows a top view of the semiconductor module after the resin molding parts have been removed.

[0044] Figure 34 It is Figure 32 The diagram shows a series of semiconductor modules arranged and configured.

[0045] Figure 35 This shows that it can be applied. Figure 32 The diagram shows the drive circuit of the electric power steering system using a semiconductor module.

[0046] Figure 36 This is a top view showing the semiconductor module according to the sixth embodiment.

[0047] Figure 37 It is shown in Figure 36 The diagram shows a top view of the semiconductor module after the resin molding parts have been removed.

[0048] Figure 38 yes Figure 37 Sectional view along line XXXVIII-XXXVIII,

[0049] Figure 39 yes Figure 37 Sectional view along line XXXIV-XXXIV,

[0050] Figure 40 It is Figure 36 The diagram shows a series of semiconductor modules arranged and configured.

[0051] Figure 41 It is Figure 40 The diagram shown illustrates a group of semiconductor modules that are linearly symmetrical to another group of semiconductor modules on the wiring substrate.

[0052] Figure 42 It is Figure 40 The diagram shown illustrates a group of semiconductor modules that are point-symmetrical to another group of semiconductor modules on the wiring substrate.

[0053] Figure 43 It is Figure 36 The diagram shows a series of semiconductor modules arranged and configured.

[0054] Figure 44 It is Figure 36 The diagram shows a series of semiconductor modules arranged and configured.

[0055] Figure 45 This is a diagram illustrating an example of the installation of the semiconductor module according to the sixth embodiment.

[0056] Figure 46 This is a diagram showing an example of the installation of a semiconductor module according to the sixth embodiment. Detailed Implementation

[0057] (First Implementation)

[0058] like Figures 1-5 As shown, the semiconductor module 10 according to the first embodiment includes a first semiconductor element 133 and a second semiconductor element 143, a resin molding 120 that integrally seals the first semiconductor element 133 and the second semiconductor element 143, conductive components 101 to 104, and conductive components 111, 112, 131, and 141. Figures 1-5 The x and y directions shown represent the lateral sides of the semiconductor module 10, and the xy plane direction represents the planar direction of the semiconductor module 10. The z direction is the up-down direction orthogonal to the planar direction.

[0059] like Figure 1 As shown in (a), the semiconductor module 10 has an appearance where four external terminals protrude along the negative direction of the y-axis and two external terminals protrude along the positive direction of the y-axis, starting from a resin molding 120 that is generally rectangular in shape when viewed from above. The four external terminals are portions of conductive parts 101 to 104 exposed from the resin molding 120, and the two external terminals are portions of conductive parts 111 and 112 exposed from the resin molding 120.

[0060] In addition, such as Figure 1 As shown in (b), when viewed from below the semiconductor module 10, the lower surfaces of conductive components 101-104 and conductive component 111 are entirely exposed from the resin molding 120. The conductive component 112 has a low-level portion 112a that is not exposed from the resin molding 120 and a high-level portion 112b that is exposed from the resin molding 120.

[0061] The resin molded part 120 is composed of a high heat dissipation resin material, which is made by mixing a resin material such as epoxy resin with fillers for improving heat dissipation. For example, a composite oxide material with high thermal conductivity, such as alumina, is selected as the filler for the high heat dissipation resin material. The thermal conductivity of the resin molded part 120 can be adjusted by changing the type and filling ratio of the filler.

[0062] Figures 2-4 The diagram illustrates the various structures within the resin molding 120 of the semiconductor module 10. Furthermore, in Figures 2-4 The location of the resin molded part 120 is shown in the figure with a dashed line.

[0063] like Figures 2-4 As shown, within the resin molding 120, a first semiconductor element 133 and a second semiconductor element 143 are integrally sealed in a configuration arranged along the x-direction with the same orientation. The first semiconductor element 133 and the second semiconductor element 143 are identical in construction, shape, and size, and are approximately rectangular when viewed from above. The gate pads 136 of the first semiconductor element 133 and the second semiconductor element 143 are located at the same positions within each semiconductor element. The first semiconductor element 133 and the second semiconductor element 143 are arranged approximately parallel to each other with the same orientation as adjacent semiconductor elements.

[0064] The first semiconductor element 133 and the second semiconductor element 143 are having Figure 6 The device is a vertically insulated gate semiconductor device with the structure shown. More specifically, it is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

[0065] The first semiconductor element 133 and the second semiconductor element 143 include a semiconductor substrate 60, a source electrode 71, and a drain electrode 72. The source electrode 71 is formed to contact the upper surface 60u of the semiconductor substrate 60. The drain electrode 72 is formed to contact the lower surface 60b of the semiconductor substrate 60. The upper surface 60u corresponds to the first surface, and the lower surface 60b corresponds to the second surface. In the semiconductor substrate 60, an n+ region 61, an n- region 62, and a p+ region 63 are sequentially stacked from the lower surface 60b side. An n+ region 64 is formed on a portion of the upper surface side of the p+ region 63. A trench 73 is formed that extends from the upper surface 60u of the semiconductor substrate 60 through the n+ region 64 and the p+ region 63 and reaches the upper surface side of the n- region 62. A gate insulating film 74 is formed on the inner wall surface of the trench 73, and a gate electrode 75 is filled in the trench 73 while being insulated from the semiconductor substrate 60 by the gate insulating film 74. The upper surface of the gate electrode 75 is covered by an insulating film 76, and the gate electrode 75 is insulated from the source electrode 71 by the insulating film 76. Furthermore, the material of the semiconductor substrate 60 is not particularly limited, but examples include silicon (Si), silicon carbide (SiC), and gallium nitride (GaN).

[0066] When a positive voltage is applied to the gate electrode 75 of the first semiconductor element 133 and the second semiconductor element 143, an n-type channel is formed along the gate insulating film 74 in the p+ region 63. In the semiconductor substrate 60, n-type charge carriers move from the source electrode 71 side to the drain electrode 72 side. As a result, current flows from the drain electrode 72 side to the source electrode 71 side. That is, in the first semiconductor element 133 and the second semiconductor element 143, by controlling the gate voltage applied to the gate electrode 75, the on / off control of the switching elements involved in the first semiconductor element 133 and the second semiconductor element 143 can be performed. The source electrode 71 corresponds to the first electrode, and the source terminal electrically connected to the source electrode 71 in the external terminal corresponds to the first terminal. Similarly, the drain electrode 72 corresponds to the second electrode, and the drain terminal electrically connected to the drain electrode 72 in the external terminal corresponds to the second terminal.

[0067] The first semiconductor element 133 and the second semiconductor element 143 are respectively configured with the source electrode 71 facing upwards (positive z-axis direction) and the drain electrode facing downwards (negative z-axis direction) in a top-view configuration, with the long side direction as the y-direction.

[0068] like Figure 2 , 3 As shown, on the side of the first semiconductor element 133, a conductive member 131, a bonding member 132, the first semiconductor element 133, a bonding member 134, and a conductive member 111 are arranged in the following order from top to bottom. The conductive member 131 includes a beam-shaped portion 131a, a pad portion 131b, and a pillar-shaped portion 131c. The pad portion 131b is located on the upper surface side of the first semiconductor element 133 and is a generally rectangular portion of the upper surface with a size similar to that of the first semiconductor element 133. The beam-shaped portion 131a extends along the long side of the generally rectangular upper surface of the pad portion 131b in the negative y-direction and extends above the conductive member 102. The pillar-shaped portion 131c extends downward from the beam-shaped portion 131a, and its lower end face is bonded to the upper surface of the conductive member 102 via a bonding member 135. The conductive member 101 is electrically connected to the gate pad 136 via a gate wiring 137.

[0069] like Figure 2 , 4As shown, on the side of the second semiconductor element 143, the conductive component 141, the bonding component 142, the second semiconductor element 143, the bonding component 144, and the conductive component 112 are arranged in this order from top to bottom. The conductive component 141 includes a beam-shaped portion 141a, a pad portion 141b, and a pillar-shaped portion 141c. The pad portion 141b is located on the upper surface side of the second semiconductor element 143 and is a generally rectangular portion of the upper surface with a size similar to that of the second semiconductor element 143. The beam-shaped portion 141a extends along the long side of the generally rectangular upper surface of the pad portion 141b in the negative y-direction and extends above the conductive component 104. The pillar-shaped portion 141c extends downward from the beam-shaped portion 141a, and the lower end face of the pillar-shaped portion 141c is bonded to the upper surface of the conductive component 104 via the bonding component 145. The conductive component 103 is electrically connected to the gate pad 146 via the gate wiring 147. In addition, gate wirings 137 and 147 are so-called clips, but in addition to clips, wire bonding and wire ribbon can also be used.

[0070] Conductive components 101 and 102 correspond to the gate terminal and source terminal of the first semiconductor element 133, respectively, and conductive component 111 corresponds to the drain pad of the first semiconductor element 133. Conductive components 103 and 104 correspond to the gate terminal and source terminal of the second semiconductor element 143, respectively, and conductive component 112 corresponds to the drain pad of the second semiconductor element 143.

[0071] like Figures 1-4 As shown, the higher-order portion 112b of the conductive component 112 is exposed from the resin molding 120, while the lower-order portion 112a is not exposed from the resin molding 120. Therefore, when viewed from below the semiconductor module 10, the portion of the drain pad (conductive component 112) of the second semiconductor element 143 exposed from the resin molding 120 has a smaller area compared to the portion of the drain pad (conductive component 111) of the first semiconductor element 133 exposed from the resin molding 120. Between the exposed higher-order portion 112b and the conductive components 103 and 104, there exists an area covered by the lower-order portion 112a by the resin molding 120, with no exposed area on the surface of the resin molding 120. This area corresponds to a shared wiring area.

[0072] like Figures 1-5 As shown, in the generally rectangular resin molding 120 viewed from above the semiconductor module 10, there exists a region between the long sides facing each other along the x-direction, including the low-order portion 112a and the portion of the conductive member 111 adjacent to the low-order portion 112a. Therefore, as Figure 5As shown, if three semiconductor modules 10 are arranged and configured with the same orientation along the x-direction, so as to be approximately orthogonal to the long side opposite along the x-direction, it is possible to ensure a region A1 that runs straight in a strip along the x-direction. Furthermore, in Figure 5 In the diagram, at the configured position, the reference numerals 10a, 10b, and 10c are marked sequentially from the positive x-axis direction. Figure 5 The area A1c shown illustrates the common wiring area A1c of the semiconductor module 10c. The common wiring area A1c is a strip-shaped region extending approximately straight from one opposite side to the other on the surface of the resin molding 120 where the conductive member 111 is exposed. The conductive member 111 is present within the common wiring area A1c, and there are no other conductive members (such as conductive member 112) besides the conductive member 111. Although not shown in the figure, semiconductor modules 10a and 10b also have the same common wiring area as the common wiring area A1c. Regarding the width of the common wiring area A1c in the direction orthogonal to the wiring direction (x-direction) (y-direction), it is ensured that the width of the wiring can be set, for example, wider than the spacing (x-direction spacing) between conductive members 101 to 104.

[0073] Region A1 comprises the area connecting the common wiring area of ​​semiconductor modules 10a to 10c and the areas between them. Region A1 spans the three semiconductor modules 10a, 10b, and 10c, and within Region A1, only the conductive component 111 is exposed from the resin molding 120. Therefore, by providing a common wiring within Region A1 connecting the three conductive components 111 respectively contained in the three semiconductor modules 10a, 10b, and 10c, the three conductive components 111 can be electrically connected to each other. Furthermore, the wiring width of the common wiring (the width in the y-direction orthogonal to the x-direction, which is the wiring direction) is wider than the wiring width (width in the x-direction) of the conductive components 101 to 104, and the width of Region A1 in the y-direction ensures that the width of the common wiring can be provided.

[0074] The conductive components 101-104, 111, and 112 described above are exposed from the resin molding 120 on either the upper or lower surface of the semiconductor module 10. Furthermore, conductive component 111 of the conductive components 101-104, 111, and 112 corresponds to a common wiring electrode, while conductive components 101-104 and 112 correspond to non-common wiring electrodes. A common wiring electrode is an electrode that is exposed from the resin molding 120 on either the upper surface (positive z-axis side) or lower surface (negative z-axis side) of the semiconductor module 10 and is electrically connected to at least one of the first electrode (source electrode 71) and the second electrode (drain electrode 72). When the semiconductor module 10 is connected to other semiconductor modules via a common wiring, the common wiring electrode is connected to the common wiring.

[0075] If used Figure 5 As explained, by providing common wiring across region A1, common wiring can be provided on the lower surface of the resin molded part 120 from one side to the other along the x-axis without being electrically connected to the electrodes (conductive parts 101-104, 112) for non-common wiring.

[0076] That is, in the semiconductor module 10, the various structures constituting the semiconductor module 10 (multiple semiconductor elements, multiple conductive parts, etc.) are configured so that when a common wiring is connected to a common wiring electrode (conductive part 111), the common wiring can be provided from one opposite side to the other on the surface of the resin molded part exposed by the common wiring electrode without being electrically connected to non-common wiring electrodes (conductive parts 101-104, 112). Therefore, multiple semiconductor modules 10 can be electrically connected to each other on the lower surface side of the semiconductor module 10. As a result, the wiring space on the lateral side of the semiconductor module 10 can be reduced, which can help to miniaturize the mounting substrate. In addition, the wiring led to the lateral side of the semiconductor module for connecting multiple semiconductor elements can be omitted. As a result, the wiring area is reduced and the wiring resistance is reduced, which can suppress heat generation from the wiring. Furthermore, since the resin molded part 120 is made of a high heat dissipation resin material, heat dissipation of the semiconductor module 10 can be promoted through the resin molded part 120.

[0077] Semiconductor module 10 can be applied to Figure 6 The drive circuit of the electric power steering (EPS) system 80 of the vehicle shown is described. The EPS 80 includes a steering wheel 90 forming a handle, a steering shaft 91, a pinion 92, a rack and pinion 93, and an EPS device 81. The steering shaft 91 is connected to the steering wheel 90. A pinion 92 is provided at the front end of the steering shaft 91. The pinion 92 meshes with the rack and pinion 93. Wheels 95 are rotatably connected to both ends of the rack and pinion 93 via tie rods or the like. When the driver rotates the steering wheel 90, the steering shaft 91 rotates. The rotational motion of the steering shaft 91 is converted into linear motion of the rack and pinion 93 via the pinion 92, and the wheels 95 are turned to a steering angle corresponding to the displacement of the rack and pinion 93.

[0078] The EPS device 81 includes a torque sensor 94, a reducer 96, a rotary motor 82, and an excitation circuit 83. The torque sensor 94 is located on the steering shaft 91 and detects the output torque of the steering shaft 91, i.e., the steering torque Trq. The rotary motor 82 generates an auxiliary torque corresponding to the detected steering torque Trq and the steering direction of the steering wheel 90. The excitation circuit 83 performs drive control of the rotary motor 82. The reducer 96 reduces the rotational speed of the rotor shaft of the rotary motor 82 and transmits the auxiliary torque to the steering shaft 91.

[0079] like Figure 8 As shown, the rotary motor 82 can be either a permanent magnet excitation type or a winding excitation type. The stator of the rotary motor 82 includes a first winding group M1 and a second winding group M2. The first winding group M1 includes a first U-phase winding U1, a first V-phase winding V1, and a first W-phase winding W1 connected in a star configuration. The second winding group M2 includes a second U-phase winding U2, a second V-phase winding V2, and a second W-phase winding W2 connected in a star configuration. The first ends of each of the first U, V, and W-phase windings U1, V1, and W1 are connected at the neutral point. The first U, V, and W-phase windings U1, V1, and W1 are each offset by 120° in electrical angle θe. The first ends of each of the second U, V, and W-phase windings U2, V2, and W2 are connected at the neutral point. The second U, V, and W-phase windings U2, V2, and W2 are each offset by 120° in electrical angle θe.

[0080] The excitation circuit section 83 includes a first inverter INV1 and a second inverter INV2 as power converters, and a first relay RL1 and a second relay RL2 as power relays.

[0081] In the first inverter INV1, the second terminal of the first U-phase winding U1 is connected to the connection point of the upper arm switch SU1p and the lower arm switch SU1n of the first U-phase. The second terminal of the first V-phase winding V1 is connected to the connection point of the upper arm switch SV1p and the lower arm switch SV1n of the first V-phase. The second terminal of the first W-phase winding W1 is connected to the connection point of the upper arm switch SW1p and the lower arm switch SW1n of the first W-phase. In the second inverter INV2, the second terminal of the second U-phase winding U2 is connected to the connection point of the upper arm switch SU2p and the lower arm switch SU2n of the second U-phase. The second terminal of the second V-phase winding V2 is connected to the connection point of the upper arm switch SV2p and the lower arm switch SV2n of the second V-phase. The second terminal of the second W-phase winding W2 is connected to the connection point of the upper arm switch SW2p and the lower arm switch SW2n of the second W-phase.

[0082] The high-potential terminals of the upper arm switches SU1p, SV1p, and SW1p of the first U, V, and W phases are connected to the positive terminal of the battery 97, which serves as a DC power supply, via the first relay RL1. The low-potential terminals of the lower arm switches SU1n, SV1n, and SW1n of the first U, V, and W phases are grounded via resistors RU1, RV1, and RW1. The high-potential terminals of the upper arm switches SU2p, SV2p, and SW2p of the second U, V, and W phases are connected to the positive terminal of the battery 97 via the second relay RL2. The low-potential terminals of the lower arm switches SU2n, SV2n, and SW2n of the second U, V, and W phases are grounded via resistors RU2, RV2, and RW2. The negative terminal of the battery 97 is grounded.

[0083] Each switch SU1p to SW2n can be a MOSFET as illustrated by the first semiconductor element 133 and the second semiconductor element 143. Each of the two switches SU1p and SU1n, SV1p and SV1n, SW1p and SW1n, SU2p and SU2n, SV2p and SV2n, and SW2p and SW2n connected in series in each arm is connected in series by connecting the source electrode of the former's MOSFET to the drain electrode of the latter's MOSFET.

[0084] Semiconductor module 10 can be used as an integrated semiconductor module SU1, SV1, SW1, SU2, SV2, SW2, which are two switches SU1p and SU1n, SV1p and SV1n, SW1p and SW1n, SU2p and SU2n, SV2p and SV2n, and SW2p and SW2n connected in series in each arm. Semiconductor module 10 can be applied in the first inverter INV1 and the second inverter INV2 to form inverter circuits.

[0085] The switches SP1 and SC1 constituting power relay RL1, and the switches SP2 and SC2 constituting power relay RL2, can be MOSFETs as exemplified by the first semiconductor element 133 and the second semiconductor element 143. Switches SP1 and SP2 are power relay switches, and switches SC1 and SC2 are reverse connection protection relays. The two switches SP1 and SC1, and SP2 and SC2 connected in series in each arm respectively connect the source electrodes of the MOSFETs in series.

[0086] Furthermore, when using MOSFETs such as the first semiconductor element 133 and the second semiconductor element 143 as switches SU1p to SW2n, SP1, SC1, SP2, and SC2, the body diode can be used as a freewheeling diode. Therefore, in Figure 7 Although the freewheeling diodes connected in anti-parallel with each switch SU1p~SW2n, SP1, SC1, SP2, SC2 are not described, the freewheeling diodes can also be connected to each switch SU1p~SW2n, SP1, SC1, SP2, SC2.

[0087] The excitation circuit section 83 detects the current flowing through resistors RU1, RV1, and RW1, and outputs it as the first U, V, and W phase currents Iur1, Ivr1, and Iwr1. Additionally, it detects the current flowing through RU2, RV2, and RW2, and outputs it as the second U, V, and W phase currents Iur2, Ivr2, and Iwr2.

[0088] The excitation circuit unit 83 includes an ECU, primarily composed of a microcomputer. The ECU operates the switches of the first inverter INV1 and the second inverter INV2 to control the torque of the rotary motor 82 to a torque command value Tr*. For example, the torque command value Tr* is set based on the steering torque Trq detected by the torque sensor 94. The excitation circuit unit 83 calculates the electrical angle θe of the rotary motor 82 based on the output signal of the angle sensor from the ECU. Furthermore, an angle sensor can be, for example, an angle sensor comprising a magnet as a magnetic generating part provided on the rotor side of the rotary motor 82, and a magnetic detection element provided near the magnet. The functions provided by the ECU can be provided, for example, by software recorded in a physical memory device and a computer, hardware, or a combination thereof that executes the software.

[0089] As described above, the semiconductor module 10 can be applied to the EPS80, and the semiconductor modules SU1 to SW2, which include two switches connected in series, can be applied to the excitation circuit section 83 of the drive circuit corresponding to the EPS80.

[0090] Specifically, the semiconductor module 10 can be applied to the inverter circuits shown as the first inverter INV1 and the second inverter INV2, respectively, and the first semiconductor element 133 and the second semiconductor element 143 are applied to the inverter circuits as switching elements connected in series.

[0091] (Modified Example)

[0092] like Figure 1 As shown in (a), the conductive components 131 and 141 are illustrated and explained as semiconductor module 10 in a case where they are not exposed from the resin molding 120, but this is not a limitation. Figure 9 Like the semiconductor module 11 shown, conductive components 151 and 161 protruding from the resin molding 120 may also be provided on the upper surface of the semiconductor module 11. The other structures of the semiconductor module 11 are the same as those of the semiconductor module 10, so the description is omitted.

[0093] In addition, such as Figure 1 As shown, the conductive components 111 and 112 are illustrated and described as extending beyond the positive direction of the y-axis of the resin molding 120, but this is not a limitation. Figure 10 Like the semiconductor module 12 shown, it may also have conductive components 113 and 114 in the positive direction of the y-axis of the resin molding 120. The other structures of the semiconductor module 12 are the same as those of the semiconductor module 10, so the description is omitted.

[0094] In addition, such as Figure 11Like the semiconductor module 13 shown, it may also have conductive parts 115 and 116 that extend in the positive direction of the y-axis beyond the resin molding 120 and branch into two. The other structures of the semiconductor module 13 are the same as those of the semiconductor module 10, so the description is omitted.

[0095] (Second Implementation)

[0096] In the first embodiment, a plurality of semiconductor elements (first semiconductor element 133, second semiconductor element 143) are illustrated and described in a state in which they are arranged in the same orientation as adjacent semiconductor elements and are substantially parallel to each other. However, as in the second embodiment, they may also be arranged in an orientation opposite to that of adjacent semiconductor elements and are substantially point-symmetric to each other.

[0097] In the semiconductor module 20 according to the second embodiment, such as Figures 12-15 As shown, within the resin molding 220, the second semiconductor element 243 and the first semiconductor element 233 are integrally sealed in a configuration where the second semiconductor element 243 is arranged along the x-axis with its orientation rotated 180° relative to the first semiconductor element 233 in the vertical direction (z-direction). That is, the first semiconductor element 233 and the second semiconductor element 243 are arranged in an orientation opposite to that of adjacent semiconductor elements, making them approximately point-symmetrical to each other. Furthermore, similar to the first embodiment, the first semiconductor element 233 and the second semiconductor element 243 are semiconductor elements with identical construction, shape, and size. The materials, shapes, and sizes of the various structures included in the semiconductor module 20 are the same as those of the various structures included in the semiconductor module.

[0098] like Figure 13 , 14 As shown, the structures on the first semiconductor element 233 side, namely conductive component 231, bonding component 232, first semiconductor element 233, bonding component 234, and conductive component 211, are configured the same as those on the first semiconductor element 133 side in the first embodiment. Therefore, the description is omitted by replacing the reference numerals of the 100 series with those of the 200 series.

[0099] like Figure 13 , 15As shown, on the side of the second semiconductor element 243, similar to the first embodiment, a conductive member 241, a bonding member 242, a second semiconductor element 243, a bonding member 244, and a conductive member 212 are arranged in this order from top. The conductive member 241 includes a beam-shaped portion 241a, a pad portion 241b, and a columnar portion 241c. The beam-shaped portion 241a extends along the long side of the generally rectangular upper surface of the pad portion 241b in the positive direction of the y-axis and extends above the conductive member 203. The columnar portion 241c extends downward from the beam-shaped portion 241a, and its lower end face is bonded to the upper surface of the conductive member 203 via a bonding member 245. The conductive member 204 is electrically connected to the gate pad 246 via a gate wiring 247.

[0100] Conductive components 201 and 202 correspond to the gate terminal and source terminal of the first semiconductor element 233, respectively, and conductive component 211 corresponds to the drain pad of the first semiconductor element 233. Conductive components 203 and 204 correspond to the source terminal and gate terminal of the second semiconductor element 243, respectively, and conductive component 212 corresponds to the drain pad of the second semiconductor element 243.

[0101] like Figures 12-15 As shown, the higher-order portion 212b of the conductive component 212 is exposed from the resin molding 220, while the lower-order portion 212a is not exposed from the resin molding 220. Therefore, when viewed from below the semiconductor module 20, the portion of the drain pad (conductive component 212) of the second semiconductor element 243 exposed from the resin molding 220 has a smaller area compared to the portion of the drain pad (conductive component 211) of the first semiconductor element 233 exposed from the resin molding 220. Between the exposed higher-order portion 212b and the conductive components 203 and 204, there exists an area covered by the lower-order portion 212a by the resin molding 220, with no exposed area on the surface of the resin molding 220. This area corresponds to a shared wiring area.

[0102] like Figures 12-16 As shown, in the generally rectangular resin molding 220 when the semiconductor module 20 is viewed from below, between the long sides facing each other along the x-direction, there is a low-order portion 212a and a portion of the conductive member 211 adjacent to the low-order portion 212a. Therefore, as Figure 16 As shown, if three semiconductor modules 20 are arranged and configured with the same orientation along the x-direction, so as to be approximately orthogonal to the long side opposite along the x-direction, it is possible to ensure a strip-shaped region A2 running straight along the x-direction. Furthermore, in Figure 16 In the diagram, at the designated positions, the reference numerals 20a, 20b, and 20c are sequentially labeled from the positive x-axis direction. Figure 16The area A2c shown illustrates the common wiring area A2c of semiconductor module 20c. The common wiring area A2c is a strip-shaped region extending approximately straight from one opposite side to the other on the surface of the resin molding 220 exposed from the conductive member 211. The conductive member 211 is present within the common wiring area A2c, and no other conductive members exist besides the conductive member 211. Although not shown in the figure, semiconductor modules 20a and 20b also have the same common wiring area as common wiring area A2c.

[0103] Region A2 comprises the area connecting the common wiring area of ​​semiconductor modules 20a to 20c and the area between them. Region A2 spans the three semiconductor modules 20a, 20b, and 20c, and within region A2, only the conductive component 211 is exposed from the resin molding 220. Therefore, by providing a common wiring within region A2 connecting the three conductive components 211 respectively contained in the three semiconductor modules 20a, 20b, and 20c, the three conductive components 211 can be electrically connected to each other.

[0104] The conductive components 201-204, 211, and 212 of the aforementioned conductive components are exposed from the resin molding 220 on either the upper or lower surface side of the semiconductor module 20. Furthermore, conductive component 211 of the conductive components 201-204, 211, and 212 corresponds to a common wiring electrode, while conductive components 201-204 and 212 correspond to non-common wiring electrodes.

[0105] like Figure 16 As shown, by providing a common wiring spanning region A2, the common wiring can be provided on the lower surface of the resin molded part 220 from one side to the other along the x-direction without being electrically connected to the electrodes (conductive parts 201-204, 212) used for non-common wiring. Furthermore, the width of the common wiring (the width in the y-direction orthogonal to the x-direction) is wider than the width of the conductive parts 201-204 (the width in the x-direction), and the width of region A2 in the y-direction ensures that the width of the common wiring can be provided.

[0106] That is, similar to semiconductor module 10, semiconductor module 20 also includes various structures constituting semiconductor module 20 (multiple semiconductor elements, multiple conductive components, etc.) so that when a common wiring is connected to a common wiring electrode, the common wiring can be provided from one opposite side to the other on the surface of the resin molding exposed by the common wiring electrode without being electrically connected to a non-common wiring electrode. Therefore, multiple semiconductor modules 20 can be electrically connected to each other on the lower surface side of semiconductor module 20. As a result, the wiring space on the lateral side of semiconductor module 20 can be reduced, which helps to miniaturize the mounting substrate. Furthermore, wiring led to the lateral side of the semiconductor module for connecting multiple semiconductor elements can be omitted. As a result, the wiring area is reduced and the wiring resistance is reduced, suppressing heat generation from the wiring. Furthermore, since the resin molding 220 is made of a high heat dissipation resin material, heat dissipation of the semiconductor module 20 can be promoted through the resin molding 220.

[0107] Furthermore, like semiconductor module 10, semiconductor module 20 can be applied to EPS80, and semiconductor modules SU1 to SW2, which include two switches connected in series, can be applied to the excitation circuit section 83 of the drive circuit corresponding to EPS80.

[0108] (Modified Example)

[0109] Similar to the first embodiment, in the second embodiment, it is also possible to... Figures 17-19 The semiconductor modules 21-23 shown are used as modified examples. For example, as... Figure 17 As shown in the semiconductor module 21, conductive components 251 and 261 protruding from the resin molding 220 may also be provided on the upper surface side of the semiconductor module 21 instead of conductive components 231 and 241.

[0110] In addition, such as Figure 18 As shown in the semiconductor module 22, conductive components 211 and 212 can be replaced by conductive components 213 and 214 that extend beyond the positive direction of the y-axis of the resin molding 220. Additionally, as... Figure 19 Like the semiconductor module 23 shown, it may also have conductive parts 215 and 216 that extend in the positive direction of the y-axis beyond the resin molding 220 and branch into two. The other structures of semiconductor modules 21 to 23 are the same as those of semiconductor module 20, so descriptions are omitted.

[0111] (Third Implementation)

[0112] In the first and second embodiments, for a plurality of semiconductor elements, conductive components are arranged and configured in a direction (x direction) perpendicular to the direction (y direction) that protrudes as an external terminal, but they may also be arranged and configured in the direction that protrudes from the external terminal.

[0113] In the semiconductor module 30 according to the third embodiment, such as Figures 20-23 As shown, within the resin molding 320, the second semiconductor element 343 and the first semiconductor element 333 are integrally sealed in a configuration where the second semiconductor element 343 is arranged in a direction 180° rotated relative to the first semiconductor element 333 in the vertical direction (z-direction) along the y-direction. That is, the first semiconductor element 333 and the second semiconductor element 343 are arranged with an orientation opposite to that of adjacent semiconductor elements, thus being approximately point-symmetrical to the adjacent semiconductor elements. Furthermore, similar to the first embodiment, the first semiconductor element 333 and the second semiconductor element 343 are semiconductor elements with identical construction, shape, and size. The first semiconductor element 333 and the second semiconductor element 343 are arranged such that their long sides, when viewed from above, are parallel to the x-axis.

[0114] like Figures 21-23 As shown, on the side of the first semiconductor element 333, similar to the first embodiment, a conductive member 331, a bonding member 332, the first semiconductor element 333, a bonding member 334, and a conductive member 312 are arranged in this order from top. The conductive member 331 includes a beam-shaped portion 331a, a pad portion 331b, and a columnar portion 331c. The beam-shaped portion 331a extends along the long side of the generally rectangular upper surface of the pad portion 331b in the positive x-axis direction, extending above the conductive member 312. The columnar portion 331c extends downward from the beam-shaped portion 331a, and its lower end face is bonded to the upper surface of the conductive member 312 via a bonding member (not shown). The conductive member 304 is electrically connected to the gate pad 346 via a gate wiring 347.

[0115] Additionally, on the side of the second semiconductor element 343, a conductive component 341, a bonding component 342, the second semiconductor element 343, a bonding component 344, and an electrical component 312 are arranged in this order from above. The conductive component 341 includes a beam-shaped portion 341a, a pad portion 341b, and a columnar portion 341c. The beam-shaped portion 341a extends along the long side of the generally rectangular upper surface of the pad portion 341b in the negative x-axis direction, extending above the conductive component 313. The columnar portion 341c extends downward from the beam-shaped portion 341a, and its lower end face is bonded to the upper surface of the conductive component 313 via a bonding component (not shown). The conductive component 301 is electrically connected to the gate pad 346 via a gate wiring 347.

[0116] The conductive component 311 is generally L-shaped and includes a terminal portion 311a and an element placement portion 311b. A first semiconductor element 333 is disposed in the element placement portion 311b. The terminal portion 311a extends from the element placement portion 311b along the positive y-axis direction to an end beyond the positive y-axis direction side of the resin molding 320.

[0117] The conductive component 312 includes a first terminal portion 312a, a low-level portion 312b, an element placement portion 312c, and a second terminal portion 312d. A second semiconductor element 343 is disposed in the element placement portion 312c. The low-level portion 312b and the first terminal portion 312a are elongated, strip-shaped, and generally rectangular portions extending from the end of the element placement portion 312c in the positive x-axis direction toward the positive y-axis direction, wherein the low-level portion 312b is closer to the element placement portion 312c. The second terminal portion 312d is a strip-shaped, and generally rectangular portion extending from the end of the element placement portion 312c in the positive x-axis direction toward the negative y-axis direction.

[0118] The conductive component 312 contacts and is electrically connected to the drain electrode of the second semiconductor element 343 in the element placement portion 312c via the bonding component 344. Additionally, the conductive component 312 is electrically connected to the source electrode of the first semiconductor element 333 in the lower-level portion 312b via the conductive component 331 and the bonding component 332. In other words, the conductive component 312 is equivalent to a bonding conductive component that bonds the first electrode (source electrode) of the first semiconductor element 333 to the second electrode (drain electrode) of the second semiconductor element 343, which is disposed adjacent to the first semiconductor element 333.

[0119] The conductive component 313 is a long, thin strip and is generally rectangular, extending from the end of the element setting portion 312c of the conductive component 312 on the positive direction side of the y-axis to the end of the resin molding 320 on the negative direction side of the y-axis.

[0120] Conductive components 304 and 312 correspond to the gate terminal and source terminal of the first semiconductor element 333, respectively, and conductive component 311 corresponds to the drain pad of the first semiconductor element 333. Conductive components 301 and 313 correspond to the gate terminal and source terminal of the second semiconductor element 343, respectively, and conductive component 312 corresponds to the drain pad of the second semiconductor element 343.

[0121] like Figures 20-24As shown, the first terminal portion 312a, the component placement portion 312c, and the second terminal portion 312d of the conductive component 312 correspond to higher-order portions and are exposed from the resin molding member 320, while the lower-order portion 312b is not exposed from the resin molding member 320. Therefore, when viewing the semiconductor module 30 from below, it appears that the first terminal portion 312a and the component placement portion 312c are not connected, while the second terminal portion 312d is connected to the component placement portion 312c. The lower-order portion 312b is adjacent to a portion of the component placement portion 311b of the conductive component 311 in the x-direction. Therefore, on the lower surface of the semiconductor module 30, between the exposed first terminal portion 312a and the component placement portion 312c, there exists an area covered by the resin molding member 320 by the lower-order portion 312b, and no part of the surface of the resin molding member 320 is exposed. This area corresponds to a common wiring area.

[0122] like Figures 20-24 As shown, in the generally rectangular resin molding 320 when viewed from below the semiconductor module 30, between the long sides facing each other along the x-direction, there is a portion of the element placement portion 311b adjacent to the low-order portion 312b, which includes the low-order portion 312b and the conductive member 311. Therefore, as Figure 24 As shown, if three semiconductor modules 30 are arranged and configured with the same orientation along the x-direction, so as to be approximately orthogonal to the long side opposite along the x-direction, then a strip-shaped region A3 along this x-direction can be ensured. Furthermore, in Figure 24 In the diagram, at the configured position, the reference numerals 30a, 30b, and 30c are marked sequentially from the positive x-axis direction. Figure 24 The area A3c shown illustrates the common wiring area A3c of semiconductor module 30c. The common wiring area A3c is a strip-shaped region extending approximately straight from one opposite side to the other on the surface of the resin molding 320 exposed from the conductive member 311. The conductive member 311 is present within the common wiring area A3c, and no other conductive members exist besides the conductive member 311. Although not shown in the figure, semiconductor modules 30a and 30b also have the same common wiring area as common wiring area A3c.

[0123] Region A3 includes a region connecting the common wiring area of ​​semiconductor modules 30a to 30c and the areas between them. Region A3 spans the three semiconductor modules 30a, 30b, and 30c. Within region A3, only the conductive component 311 (more specifically, the component mounting portion 311b) is exposed from the resin molding 320. Therefore, by providing a common wiring within region A3 connecting the three conductive components 311 respectively contained in the three semiconductor modules 30a, 30b, and 30c, the three conductive components 311 can be electrically connected to each other.

[0124] The conductive components 301-304 and 311-313 of the aforementioned conductive components are exposed from the resin molding 320 on the upper or lower surface side of the semiconductor module 30. Furthermore, conductive component 311 of conductive components 301-304 and 311-313 corresponds to a common wiring electrode, while conductive components 301-304, 312, and 313 correspond to non-common wiring electrodes.

[0125] like Figure 24 As shown, by providing a common wiring spanning region A3, the common wiring can be provided on the lower surface of the resin molded part 320 from one side to the other along the x-direction without being electrically connected to the electrodes (conductive parts 301-304, 312, 313) used for non-common wiring. Furthermore, the width of the common wiring (the width in the y-direction orthogonal to the x-direction) is wider than the width of the conductive parts 301-304 (width in the x-direction), and the width of region A3 in the y-direction ensures that the width of the common wiring can be provided.

[0126] That is, similar to semiconductor modules 10 and 20, the various structures constituting the semiconductor module 30 (multiple semiconductor elements, multiple conductive components, etc.) are also configured in the semiconductor module 30 so that when a common wiring is connected to a common wiring electrode, the common wiring can be provided from one opposite side to the other on the surface of the resin molded part exposed by the common wiring electrode without being electrically connected to a non-common wiring electrode. Therefore, multiple semiconductor modules 30 can be electrically connected to each other on the lower surface side of the semiconductor module 30. As a result, the wiring space on the lateral side of the semiconductor module 30 can be reduced, which can help to miniaturize the mounting substrate. In addition, the wiring led to the lateral side of the semiconductor module for connecting multiple semiconductor elements can be omitted. As a result, the wiring area is reduced and the wiring resistance is reduced, which can suppress heat generation from the wiring. Furthermore, since the resin molded part 320 is made of a high heat dissipation resin material, heat dissipation of the semiconductor module 30 can be promoted through the resin molded part 320.

[0127] Furthermore, like semiconductor module 10, semiconductor module 30 can be applied to EPS80, and semiconductor modules SU1 to SW2, which include two switches connected in series, can be applied to the excitation circuit section 83 of the drive circuit corresponding to EPS80.

[0128] (Modified Example)

[0129] In the third embodiment, it is also possible to Figures 25-27 The semiconductor modules 31-33 shown are used as modified examples. For example, such as... Figure 25As shown in the semiconductor module 31, conductive components 351 and 361 protruding from the resin molding 320 may also be provided on the upper surface side of the semiconductor module 31 instead of conductive components 331 and 341.

[0130] In addition, such as Figure 26 As shown in the semiconductor module 32, conductive components 301 and 302 can be replaced by a conductive component 305 that integrates them. Similarly, conductive components 303 and 304 can be replaced by a conductive component 306 that integrates them. Furthermore, conductive component 305 is the gate terminal of the first semiconductor element 333, and conductive component 306 is the gate terminal of the second semiconductor element 343. Additionally, as... Figure 27 As shown in the semiconductor module 33, one of the conductive components 301 and 302 may not be present. Alternatively, one of the conductive components 303 and 304 may also be absent. The semiconductor module 33 does not include conductive components 301 and 303. Conversely, since the other structures of semiconductor modules 31-33 are the same as those of semiconductor module 30, their descriptions are omitted.

[0131] (Fourth Implementation)

[0132] In the first embodiment, the conductive member 112, which is equivalent to a non-shared wiring electrode, has a higher-order portion 112b that is higher toward the lower surface exposed from the resin molding part 120, and a lower-order portion 112a that is lower than the higher-order portion 112b, thereby enabling shared wiring, but is not limited thereto.

[0133] In the semiconductor module 40 according to the fourth embodiment, such as Figures 28-30 As shown, within the resin molding 420, the first semiconductor element 433 and the second semiconductor element 443 are integrally sealed in a state where they are arranged and configured with the same orientation along the x-direction. That is, the first semiconductor element 433 and the second semiconductor element 443 are configured with the same orientation as adjacent semiconductor elements, making them substantially parallel to adjacent semiconductor elements. Furthermore, similar to the first embodiment, the first semiconductor element 433 and the second semiconductor element 443 are semiconductor elements with the same structure, shape, and size. The first semiconductor element 433 and the second semiconductor element 443 are configured such that their long sides, when viewed from above, are parallel to the x-axis.

[0134] like Figures 29-31As shown, on the side of the first semiconductor element 433, similar to the first embodiment, a conductive member 431, a bonding member 432, the first semiconductor element 433, a bonding member 434, and a conductive member 411 are arranged in this order from top. The conductive member 431 includes a beam-shaped portion 431a, a pad portion 431b, and a columnar portion 431c. The beam-shaped portion 431a extends along the long side of the generally rectangular upper surface of the pad portion 431b in the positive direction of the y-axis, extending above the conductive member 412. The columnar portion 431c extends downward from the beam-shaped portion 431a, and the lower end face of the columnar portion 431c is bonded to the upper surface of the conductive member 401 via a bonding member (not shown). The conductive member 402 is electrically connected to the gate pad 446 via a gate wiring 447.

[0135] Additionally, on the second semiconductor element 443 side, a conductive member 441, a bonding member 442, the second semiconductor element 443, a bonding member 444, and a conductive member 412 are arranged in this order from top to bottom. The conductive member 441 includes a beam-shaped portion 441a, a pad portion 441b, and a columnar portion 441c. The beam-shaped portion 441a extends along the long side of the generally rectangular upper surface of the pad portion 441b in the positive y-axis direction, extending above the conductive member 403. The columnar portion 441c extends downward from the beam-shaped portion 441a, and its lower end face is bonded to the upper surface of the conductive member 403 via a bonding member (not shown). The conductive member 404 is electrically connected to the gate pad 446 via a gate wiring 447. The structures on the second semiconductor element 443 side are in the same shape, size, and positional relationship as the structures on the first semiconductor element 443 side are moved in the positive x-axis direction.

[0136] Conductive components 401 and 402 correspond to the source and gate terminals of the first semiconductor element 433, respectively, and conductive component 411 corresponds to the drain pad of the first semiconductor element 433. Conductive components 403 and 404 correspond to the source and gate terminals of the second semiconductor element 243, respectively, and conductive component 412 corresponds to the drain pad of the second semiconductor element 443.

[0137] The conductive member 411 is generally T-shaped and includes a first terminal portion 411a, an element placement portion 411b, a middle portion 411c, and a second terminal portion 411d. The element placement portion 411b is disposed approximately at the center of the conductive member 411 in the y-direction, and the middle portion 411c is located on the negative x-axis side relative to the element placement portion 411b. The first terminal portion 411a is disposed on the positive y-axis side and extends beyond the end of the resin molding member 420 on the positive y-axis side. The second terminal portion 411d is disposed on the negative y-axis side and extends beyond the end of the resin molding member 420 on the negative y-axis side. The middle portion 411c is the portion between the first terminal portion 411a and the second terminal portion 411d. A first semiconductor element 433 is disposed in the element placement portion 411b. The conductive member 412 has the same shape as the conductive member 411, therefore, 411 in the reference numerals is replaced with 412 to omit the description.

[0138] like Figures 28-31 As shown, in the generally rectangular resin molded part 420 when viewed from below the semiconductor module 40, there exists a region containing only conductive components 411 between the short sides opposite each other along the y-direction. This region corresponds to a common wiring area. Therefore, as Figure 31 As shown, if three semiconductor modules 40 are arranged and configured with the same orientation along the y-direction, so as to be approximately orthogonal to the short side opposite along the y-direction, then a strip-shaped region A4 can be ensured to run straight along the y-direction. Furthermore, in Figure 31 In the diagram, at the configured position, the reference numerals 40a, 40b, and 40c are marked sequentially from the positive direction of the y-axis. Figure 31 The area A4c shown illustrates the common wiring area A4c of semiconductor module 40c. The common wiring area A4c is a strip-shaped region extending approximately straight from one opposite side to the other on the surface of the resin molding 420 exposed from the conductive member 411. The conductive member 411 is present within the common wiring area A4c, and there are no conductive members other than the conductive member 411. Although not shown in the figure, semiconductor modules 40a and 40b also have the same common wiring area as common wiring area A4c.

[0139] Region A4 encompasses the area connecting the common wiring area of ​​semiconductor modules 40a-40c to the area between them. Region A4 spans the three semiconductor modules 40a, 40b, and 40c, and within region A4, only the conductive component 411 is exposed from the resin molding 420. Therefore, by providing a common wiring within region A4 connecting the three conductive components 411 respectively contained in the three semiconductor modules 40a, 40b, and 40c, the three conductive components 411 can be electrically connected to each other. Furthermore, as from... Figure 31As is known, similarly, in the conductive component 412, in the resin molding 420, which is generally rectangular when viewed from below the semiconductor module 40, there exists a region containing only the conductive component 412 between the short sides facing each other along the y-direction. Therefore, it is possible to provide a common wiring connecting the three conductive components 412 respectively contained in the three semiconductor modules 40a, 40b, and 40c.

[0140] The conductive components 401-404, 411, and 412 of the aforementioned conductive components are exposed from the resin molding 420 on the upper or lower surface side of the semiconductor module 40. Furthermore, conductive components 411 and 412 of the conductive components 401-404, 411, and 412 correspond to common wiring electrodes, while conductive components 401-404 correspond to non-common wiring electrodes.

[0141] If used Figure 31 As explained, by providing common wiring across region A4, common wiring can be provided on the lower surface of the resin molded part 120 from one side to the other along the x-direction without being electrically connected to electrodes (conductive parts 401-404, etc.) used for non-common wiring. Furthermore, the width of the common wiring (the width in the x-direction orthogonal to the y-direction, which is the wiring direction) is wider than the width of the conductive parts 401-404 (the width in the x-direction), and the width of region A4 in the x-direction ensures that the width of the common wiring can be provided.

[0142] That is, similar to semiconductor modules 10, 20, and 30, the various structures constituting semiconductor module 40 (multiple semiconductor elements, multiple conductive components, etc.) are also configured in semiconductor module 40 so that when a common wiring is connected to a common wiring electrode, the common wiring can be provided from one opposite side to the other on the surface of the resin molding exposed by the common wiring electrode without being electrically connected to a non-common wiring electrode. Therefore, multiple semiconductor modules 40 can be electrically connected to each other on the lower surface side of semiconductor module 40. As a result, the wiring space on the lateral side of semiconductor module 40 can be reduced, which helps to miniaturize the mounting substrate. In addition, the wiring led to the lateral side of semiconductor module for connecting multiple semiconductor elements can be omitted. As a result, the wiring area is reduced and the wiring resistance is reduced, which can suppress heat generation from the wiring. Furthermore, since the resin molding 420 is made of a high heat dissipation resin material, heat dissipation of semiconductor module 40 can be promoted through the resin molding 420.

[0143] Furthermore, in the semiconductor module 40, the common wiring electrode extends to positions protruding from both sides of a pair of opposing edges on the surface of the resin molded part. With this configuration, common wiring can be achieved without creating a step difference in the thickness direction of the conductive components. Moreover, in the semiconductor module 40, it is not necessary to separately fabricate conductive components on the first semiconductor element side and conductive components on the second semiconductor element side, thus simplifying the structure and contributing to cost reduction.

[0144] (Fifth Implementation)

[0145] In the above embodiments, a semiconductor module containing two semiconductor elements has been illustrated and described, but it is also possible for a semiconductor module to contain three or more semiconductor elements.

[0146] In the semiconductor module 50 according to the fifth embodiment, such as Figure 32 , 33 As shown, within the resin molding 520, the first semiconductor element 533, the second semiconductor element 543, and the third semiconductor element 553 are integrally sealed in a state in which they are arranged and configured in the same orientation along the x-direction.

[0147] Semiconductor module 50 has a structure in which a third semiconductor element 553 is further added to semiconductor module 40, and conductive components are stacked or connected to the third semiconductor element 553. The structures on the side of the first semiconductor element 533 and the structures on the side of the second semiconductor element 543 are the same as the structures on the side of the first semiconductor element 433 and the second semiconductor element 443 in semiconductor module 40, so the description is omitted by replacing the reference numerals of the 400 series with those of the 500 series.

[0148] Each structure on the third semiconductor element 553 side is the state after the structures on the first semiconductor element 533 side or the structures on the second semiconductor element 543 side are moved along the positive direction of the x-axis, and each structure has the same shape, size, and positional relationship.

[0149] On the side of the third semiconductor element 553, a conductive component 581, a bonding component, the third semiconductor element 553, the bonding component, and a conductive component 571 are arranged in the following order from top to bottom. The conductive component 581 includes a beam-shaped portion 581a, a pad portion 581b, and a columnar portion (not shown). The beam-shaped portion 581a extends along the long side of the generally rectangular upper surface of the pad portion 581b in the positive y-axis direction, extending above the conductive component 505. The columnar portion extends downward from the beam-shaped portion 581a, and its lower end face is bonded to the upper surface of the conductive component 505 via the bonding component (not shown). The conductive component 506 is electrically connected to the gate pad via a gate wiring.

[0150] Conductive components 501 and 502 correspond to the source and gate terminals of the first semiconductor element 533, respectively, and conductive component 511 corresponds to the drain pad of the first semiconductor element 533. Conductive components 503 and 504 correspond to the source and gate terminals of the second semiconductor element 543, respectively, and conductive component 512 corresponds to the drain pad of the second semiconductor element 543. Conductive components 505 and 506 correspond to the source and gate terminals of the third semiconductor element 553, respectively, and conductive component 571 corresponds to the drain pad of the third semiconductor element 553.

[0151] like Figures 32-34 As shown, in the generally rectangular resin molding 520 when viewed from below, there exists a region containing only conductive components 511 between the short sides opposite each other along the y-direction. This region corresponds to a common wiring area. Therefore, as Figure 34 As shown, if three semiconductor modules 50 are arranged and configured with the same orientation along the y-direction, so as to be approximately orthogonal to the short side opposite along the y-direction, then a region A5 running straight in a strip along the y-direction can be ensured. Furthermore, in Figure 34 In the diagram, at the configured position, the reference numerals 50a, 50b, and 50c are marked sequentially from the positive direction of the y-axis. Figure 34 The area A5c shown illustrates the common wiring area A5c of semiconductor module 50c. The common wiring area A5c is a strip-shaped region extending approximately straight from one opposite side to the other on the surface of the resin molding 520 exposed from the conductive member 511. The conductive member 511 is present within the common wiring area A5c, and no other conductive members exist besides the conductive member 511. Although not shown in the figure, semiconductor modules 50a and 50b also have the same common wiring area as common wiring area A5c.

[0152] Region A5 comprises the area connecting the common wiring area of ​​semiconductor modules 50a to 50c and the area between them. Region A5 spans the three semiconductor modules 50a, 50b, and 50c, and within region A5, only the conductive component 511 is exposed from the resin molding 520. Therefore, by providing a common wiring within region A5 connecting the three conductive components 511 respectively contained in the three semiconductor modules 50a, 50b, and 50c, the three conductive components 511 can be electrically connected to each other.

[0153] In addition, such as from Figure 34As can be seen, similarly, in the conductive components 512 and 571, in the resin molding 520, which is approximately rectangular when viewed from below the semiconductor module 50, there exists a region containing only the conductive component 512 between the short sides facing each other along the y-direction. Therefore, a common wiring can be provided connecting the three conductive components 512 or the three conductive components 571 respectively contained in the three semiconductor modules 50a, 50b, and 50c. Furthermore, the wiring width of the common wiring (the width in the x-direction orthogonal to the y-direction, which is the wiring direction) is wider than the wiring width (width in the x-direction) of the conductive components 501 to 506, and the width in the x-direction of region A5 ensures that the width of the common wiring can be provided.

[0154] The semiconductor module involved in this embodiment can be used for Figure 35 The drive circuit shown is as shown. Figure 35 The driving circuit shown is equivalent to... Figure 8 The drive circuit shown is the drive circuit after adding motor relay switches TU1, TV1, TW1, TU2, TV2, and TW2. The connection point of the upper arm switch SU1p and lower arm switch SU1n of the first U phase and the second end of the first U phase winding U1 are connected via motor relay switch TU1. The connection point of the upper arm switch SV1p and lower arm switch SV1n of the first V phase and the second end of the first V phase winding V1 are connected via motor relay switch TV1. The connection point of the upper arm switch SW1p and lower arm switch SW1n of the first W phase and the second end of the first W phase winding U1 are connected via motor relay switch TW1. The connection point of the upper arm switch SU2p and lower arm switch SU2n of the second U phase and the second end of the second U phase winding U2 are connected via motor relay switch TU2. The connection point of the upper arm switch SV2p and lower arm switch SV2n of the second V phase and the second end of the second V phase winding V2 are connected via motor relay switch TV2. The connection point of the upper arm switch SW2p and the lower arm switch SW2n of the second W phase is connected to the second end of the second W phase winding U2 via the motor relay switch TW2.

[0155] Semiconductor module 50 can be applied to EPS80, and can be used as semiconductor modules SU1 to SW2, which include two switches connected in series and a motor relay switch, in the excitation circuit section 83 corresponding to the drive circuit of EPS80. Alternatively, it can be configured as... Figure 8 The SU1, SV1, and SW1 shown are integrated semiconductor modules.

[0156] Furthermore, even in a semiconductor module described in the first embodiment, which has a low-order portion 112a and a high-order portion 112b corresponding to the conductive component 112 for non-shared wiring electrodes, three or more semiconductor elements can be included to achieve shared wiring. For example, by configuring each structure on the side where a second semiconductor element 143 is further added to the semiconductor module 10 in the positive x-axis direction, a semiconductor module including three semiconductor elements capable of shared wiring can be realized.

[0157] (Sixth Implementation Method)

[0158] In the embodiments described above, a semiconductor module in which a conductive component, which functions as a gate terminal or the like, protrudes laterally from the resin molding part when viewed from above has been illustrated and described, but this is not a limitation. The conductive component may not protrude laterally from the semiconductor module.

[0159] like Figures 36-39 As shown, the semiconductor module 160 according to the sixth embodiment includes a first semiconductor element 633 and a second semiconductor element 643, a resin molding 620 that integrally seals the first semiconductor element 633 and the second semiconductor element 643, conductive components 601 to 605, and conductive components 611, 612, 631, and 641. Figures 36-39 The x and y directions shown represent the lateral sides of the semiconductor module 160, and the xy plane direction represents the planar direction of the semiconductor module 160. The z direction is the up-down direction orthogonal to the planar direction.

[0160] Figure 36 (a) is a top view of semiconductor module 160. Figure 36 (b) is a view of the semiconductor module 160 from below. Figure 37 This is a top-view diagram of the various structures within the resin molded part 120 of the semiconductor module 160. Figure 38 , 39 This is a cross-sectional view of the various structures within the resin molding 120 of the semiconductor module 160. Furthermore, in Figures 37-39 The location of the resin molded part 120 is shown in the figure with a dashed line.

[0161] like Figures 36-39 As shown, within the resin molding 620, the second semiconductor element 643 and the first semiconductor element 633 are integrally sealed in a configuration where the second semiconductor element 643 is arranged and configured with its orientation rotated 180° relative to the first semiconductor element 633 along the x-axis. The first semiconductor element 633 and the second semiconductor element 643 are semiconductor elements with identical construction, shape, and size, and are approximately rectangular when viewed from above.

[0162] On the side of the first semiconductor element 633, a conductive component 631, a bonding component 632, the first semiconductor element 633, a bonding component 634, and a conductive component 611 are arranged from top to bottom in this order. On the side of the second semiconductor element 643, a conductive component 641, a bonding component 642, the second semiconductor element 643, a bonding component 644, and a conductive component 612 are arranged from top to bottom in this order.

[0163] When viewed from below, the lower surfaces of conductive components 601-605 and conductive component 111 are entirely exposed from the resin molding 620.

[0164] In semiconductor module 160, such as Figure 36 As shown in (b), conductive components 601 to 605, which function as gate terminals, source terminals, or drain terminals, are exposed on the lower surface side (negative direction of the z-axis) of the resin molding 620, but do not protrude in the y-direction, which is the lateral side.

[0165] The conductive component 612 includes a low-level portion 612a that is not exposed from the resin molding member 620, and a high-level portion 612b that is exposed from the resin molding member 620. The high-level portion 612b is a generally rectangular portion disposed below and around the second semiconductor element 643. The low-level portion 612a is an elongated rectangular portion extending from the end of the high-level portion 612b toward the side where the first semiconductor element 633 is disposed (the negative x-axis side).

[0166] The conductive component 631 is generally rectangular in top view and includes an extension 631a and a pad portion 631b. The pad portion 631b is located on the upper surface side of the first semiconductor element 633 and is bonded to the upper surface side (source electrode side) of the first semiconductor element 633 via a bonding member 632. The extension portion 631a extends from the pad portion 631b along the negative y-axis direction and extends above the lower-order portion 612a of the conductive component 612. The lower end face of the extension portion 631a is bonded to the upper surface of the lower-order portion 612a via a bonding member 634. The lower surface side of the second semiconductor element 643, i.e., the drain electrode side, is electrically connected to the upper surface side of the first semiconductor element 633, i.e., the source electrode side, via the conductive components 631 and 612.

[0167] Similar to conductive component 631, conductive component 641 is generally rectangular in plan view and includes an extension 641a and a pad portion 641b. The pad portion 641b is located on the upper surface side of the second semiconductor element 643 and is bonded to the upper surface side (source electrode side) of the second semiconductor element 643 via a bonding member 642. The extension portion 641a extends from the pad portion 641b along the positive y-axis direction to the top of conductive component 605. The lower end face of the extension portion 641a is bonded to the upper surface of conductive component 605 via a bonding member 644.

[0168] Conductive component 601 is connected to conductive component 611, which functions as the drain pad of the first semiconductor element 633, and functions as the drain terminal of the first semiconductor element 633. Conductive component 602 is electrically connected to the gate electrode of the first semiconductor element 633, and functions as the gate terminal of the first semiconductor element 633. Conductive component 603 is electrically connected to the gate electrode of the second semiconductor element 643, and functions as the gate terminal of the second semiconductor element 643.

[0169] Conductive component 604 is connected to conductive component 612, which functions as the drain pad of the second semiconductor element 643. Conductive component 612 is electrically connected to the drain electrode of the second semiconductor element 643 and the source electrode of the first semiconductor element 633, thus conductive component 604 functions as both the source terminal of the first semiconductor element 633 and the drain terminal of the second semiconductor element 643. Conductive component 605 is electrically connected to conductive component 641, which functions as the source pad of the second semiconductor element 643, and functions as the drain terminal of the second semiconductor element 643.

[0170] like Figures 36-39 As shown, a low-level portion 612a is provided at a position opposite to the first semiconductor element 633 and the conductive components 601 and 602, which function as gate and drain terminals, along the y-direction. Furthermore, on the lower surface side of the semiconductor module 160, there exists an area covered by the low-level portion 612a by the resin molding member 620, with no exposed areas on the surface of the resin molding member 620. This area corresponds to a common wiring area.

[0171] Therefore, as Figure 40 As shown, if three semiconductor modules 160 are arranged and configured with the same orientation along the y-direction, so as to be approximately orthogonal to the long side opposite along the y-direction, then, for example, a region A6 that runs straight in a strip along the y-direction can be ensured. Region A6 is a roughly rectangular region extending along the y-direction on the negative x-axis side of the conductive member 602. Furthermore, in Figure 40 In the diagram, reference numerals 160a, 160b, and 160c are sequentially labeled from the positive y-axis direction at their designated positions. Region A6a shows the common wiring region A6a of semiconductor module 160a. The common wiring region A6a is a strip-shaped area extending approximately straight from one opposite side to the other on the surface of the resin molding 620 exposed from the conductive member 611. The conductive member 611 is present within the common wiring region A6a, and there are no conductive members other than the conductive member 601 which is at the same potential as the conductive member 611. Although not shown in the diagram, semiconductor modules 160b and 160c also have the same common wiring region as common wiring region A6a.

[0172] Region A6 encompasses the area connecting the common wiring area of ​​semiconductor modules 160a to 160c and the area between them. Region A6 spans the three semiconductor modules 160a, 160b, and 160c. Within region A6, only the conductive component 611 and the conductive component 601 at the same potential as the conductive component 611 are exposed from the resin molding 620. Therefore, by providing a common wiring within region A6 connecting the three conductive components 611 contained in the three semiconductor modules 160a, 160b, and 160c, the three conductive components 611 can be electrically connected to each other. Furthermore, the wiring width of the common wiring (the width in the x-direction orthogonal to the y-direction, which is the wiring direction) is wider than the wiring width (width in the x-direction) of the conductive components 601 to 603, and the width of region A6 in the x-direction ensures that the width of the common wiring can be provided. The conductive component 611 corresponds to an electrode for the common wiring.

[0173] In the semiconductor module 160, the various structures constituting the semiconductor module 160 (multiple semiconductor elements, multiple conductive components, etc.) are configured so that when a common wiring is connected to a common wiring electrode (conductive component 611), the common wiring can be provided from one opposite side to the other on the surface of the resin molded part exposed by the common wiring electrode without being electrically connected to non-common wiring electrodes (conductive components 601-605, 612). Therefore, similar to the first embodiment, multiple semiconductor modules 160 can be electrically connected to each other on the lower surface side of the semiconductor module 160. As a result, the wiring space on the lateral side of the semiconductor module 160 can be reduced, which can help to miniaturize the mounting substrate. In addition, the wiring led to the lateral side of the semiconductor module for connecting multiple semiconductor elements can be omitted. As a result, the wiring area is reduced and the wiring resistance is reduced, which can suppress heat generation from the wiring.

[0174] exist Figure 41 The diagram shows an electronic device 180 in which module groups 160s and 161s, each containing three semiconductor modules, are disposed on a wiring substrate 650. Module group 160s consists of three semiconductor modules 160s... Figure 40 The module group is configured as shown in the diagram. Module group 161s combines the semiconductor module with... Figure 40 A group of three identical modules arranged along the y-direction, wherein the semiconductor module 160 is configured with respect to the positional relationship of its various structures. Figures 36-39The semiconductor modules shown are arranged in a line-symmetrical configuration along the y-axis. Similar to region A6, region A61, serving as a common wiring area spanning the three semiconductor modules, is also ensured for module group 161s. Module groups 160s and 161s are configured to be approximately line-symmetrical with respect to the central line L1 extending along the y-direction through the center of the wiring substrate 650. Module groups 160s and 161s are configured such that regions A6 and A61 are located closer to the central line L1. Figure 41 The electronic device 180 shown can be applied, for example, to... Figure 8 The inverter circuit shown. More specifically, for example, module group 160s can be used as the first inverter INV1, and module group 161s can be used as the second inverter INV2.

[0175] exist Figure 42 The diagram shows an electronic device 181 in which module groups 160s and 162s, each containing three semiconductor modules, are disposed on a wiring substrate 650. Module groups 160s and 162s are formed by placing the three semiconductor modules 160s on a wiring substrate 650. Figure 40 The module group is configured as shown in state 3. Module group 160s and module group 162s are set to be approximately point-symmetrical with respect to the center O of the wiring substrate 650. Module group 162s is positioned such that module group 160s is rotated 180° around the center O. Module groups 160s and 162s are configured such that region A6 and region A62 are located closer to the center O. Figure 42 The electronic device 181 shown can be applied, for example, to... Figure 8 The inverter circuit shown. More specifically, for example, module group 160s can be used as the first inverter INV1, and module group 161s can be used as the second inverter INV2.

[0176] In addition, in such Figure 40 Even with semiconductor modules 160a to 160c configured as shown, a shared wiring area can be ensured in a manner different from that of area A6. For example, as Figure 43 As shown, a roughly rectangular area A7 extending along the y-direction can also be ensured as a common wiring area on the positive x-axis side relative to the conductive component 602. Additionally, it is also possible to... Figure 40 The area A6 shown is Figure 43 The area A3 shown is designated as a shared cabling area by both parties. Furthermore, it is also possible to... Figure 44The area A8 shown is ensured to be a common wiring area. Area A8 includes a portion A8R located in the same position as area A6, a portion A8L located in the same position as area A7, and portions A8R and A8C. Portion A8C can be positioned where it does not contact the conductive component 602. If a common wiring with the same shape as area A8 is used to connect semiconductor modules 160a to 160c, the cross-sectional area in the current flow direction of the common wiring can be increased, and wiring resistance can be reduced.

[0177] exist Figure 45 As an example of a semiconductor module 160 mounted on a wiring substrate 650, an electronic device 182 is shown. The electronic device 182 includes the semiconductor module 160, the wiring substrate 650, and a housing 670. The semiconductor module 160 is disposed on the wiring substrate 650. Figure 45 The housing 670, shown with an opening at the top (on the negative z-axis side), is designed to... Figure 36 The upper surface side (the positive z-axis side) shown is now the lower side. The upper surface of the housing 670 is now covered by the wiring substrate 650.

[0178] The wiring substrate 650 includes a substrate portion 651, a wiring portion 652, and a solder mask portion 653 disposed around the wiring portion 652. The wiring portion 652 and the solder mask portion 653 are disposed on the surface of the substrate portion 651 in the positive z-axis direction, forming a wiring pattern. A bonding member 662 is disposed in contact with the upper surface of the conductive wiring portion 652, and the semiconductor module 160 is bonded to the wiring substrate 650 via the bonding member 662. More specifically, conductive members 611 and 612 are bonded and fixed to the wiring portion 652 via the bonding member 662. The bonding member 662 is made of, for example, solder material. The solder mask portion 653 is made of, for example, a solder mask resin material such as epoxy resin. The housing 670 is formed of a metal such as aluminum.

[0179] like Figure 45 As shown, the side of the semiconductor module 160 opposite to the wiring substrate 650, i.e., the reverse mounting surface, is the side in the positive z-axis direction. This side is covered by a resin molding 620 made of a high-heat-dissipating resin material, and the conductive components are not exposed. The side of the resin molding 620 opposite to the wiring substrate 650 contacts the housing 670. The depth of the housing 670 (the height of the inner wall surface in the z-direction) is approximately the same as the combined thickness (the length in the z-direction) of the semiconductor module 160 and the bonding components 661 and 662.

[0180] The resin molding part 620 is made of a high heat dissipation resin material, thus enabling heat dissipation from the semiconductor module 160 and the wiring substrate 650. Furthermore, since the resin molding part 620 is in contact with the housing 670, heat from the semiconductor module 160 and the wiring substrate 650 can be efficiently dissipated to the housing 670 via the resin molding part 620.

[0181] exist Figure 46 As another example of the state in which the semiconductor module 160 is mounted on the wiring substrate 650, electronic device 183 is shown. Figure 46 Similarly, the semiconductor module 160 is disposed on the wiring substrate 650. Figure 46 The housing 671 shown has an opening at the top (on the negative z-axis side) so that... Figure 36 The upper surface side (the positive z-axis side) shown is now the lower side. The upper surface of the housing 671 is now covered by the wiring substrate 650.

[0182] exist Figure 46 Within housing 671, semiconductor module 160 is housed with its lateral sides (x and y directions) and underside (positive z-axis direction) covered by heat dissipation component 680. Housing 671 is constructed identically to housing 670 except for its depth. The depth of housing 671 is approximately the same as the sum of the thickness of semiconductor module 160 and bonding components 661, 662 plus the thickness dg of heat dissipation component 680. Even if there is a difference in the difference between the thickness of semiconductor module 160 and bonding components 661, 662 and the depth of housing 671 due to design tolerances, the heat dissipation path to housing 671 can be ensured by adjusting the thickness dg of heat dissipation component 680 filling the space between housing 671 and semiconductor module 160.

[0183] The heat dissipation component 680 is made of a high heat dissipation material, which is a mixture of a gel-like material such as resin or silicon, a binder, and fillers used to improve heat dissipation. For example, a composite oxide material with high thermal conductivity, such as alumina, is selected as the filler. The thermal conductivity of the heat dissipation component 680 can be adjusted by changing the type and filling ratio of the filler.

[0184] The heat dissipation component 680 is preferably adjusted to have a thermal conductivity equal to or higher than that of the resin molding component 620. For example, if the thermal conductivity of the resin molding component 620 is set to km and the thermal conductivity of the heat dissipation component 680 is set to kg, then km ≥ 2 W / (m·K) is preferred, and km ≥ 3 W / (m·K) is particularly preferred. Alternatively, kg ≥ km is acceptable, and kg > km is preferred. Conventionally, in semiconductor modules where the electrodes are exposed on the reverse mounting surface, based on the idea of ​​heat dissipation from the exposed electrodes, it is not necessary to increase the thermal conductivity of the resin molding component, and it is as low as less than 1 W / (m·K). In contrast, by using the resin molding component 620 with higher thermal conductivity as in this embodiment, even if the electrodes of the semiconductor module 160 are covered by the resin molding component 620, the heat generated in the semiconductor module 160 can be efficiently dissipated to the housings 670 and 671. Furthermore, by increasing the thermal conductivity (km) and (kg) to be higher than that of the structure on the wiring substrate 650 side (e.g., the thermal conductivity of the solder mask 653), heat dissipation to the housing 670 and 671 can be achieved more efficiently. In addition, the thermal conductivity of the aluminum housing 670 and 671 is approximately 100–300 W / (m·K), which is significantly higher than that of km and kg.

[0185] Furthermore, the reverse mounting surface of the semiconductor module 160 is covered by the resin molding 620, and the conductive components that function as electrodes are not exposed. Therefore, compared to semiconductor modules where the electrodes are exposed on the reverse mounting surface, the thickness dg of the heat dissipation component 680 can be reduced. The resin molding 620 has higher insulation properties than the heat dissipation component 680, while requiring a smaller thickness to ensure insulation. Therefore, the distance between the lower surface of the electrodes (conductive components 631 and 641 in this embodiment) on the reverse mounting surface side of the semiconductor module 160 and the upper surface of the housing 671 can be shortened compared to semiconductor modules where the electrodes are exposed on the reverse mounting surface. As a result, the mounting portion of the semiconductor module 160 can be made smaller than in the past.

[0186] In addition, Figure 45 , 46 In this paper, the semiconductor module 160 according to the sixth embodiment is used, and its installation state is described. However, for semiconductor modules whose reverse mounting surface is covered by a resin molding part in the semiconductor modules described in the above embodiments (e.g., semiconductor modules 10, 20, 30, 40, 50), it is possible to replace it with... Figure 45 , 46 The semiconductor module 160 shown.

[0187] According to the above-described embodiments, the following effects can be obtained.

[0188] Semiconductor modules 10-13, 20-23, 30-33, 40, 50, and 160 include multiple semiconductor elements (e.g., first semiconductor element 133, second semiconductor element 143), a resin molding (e.g., resin molding 120) that integrally seals the multiple semiconductor elements, and multiple conductive components (e.g., 101-104, 111-116) that are electrically connected to at least one of the multiple semiconductor elements.

[0189] In each of the above-described semiconductor modules, a plurality of semiconductor elements have a gate electrode 75, a first electrode (source electrode 71), and a second electrode (drain electrode 72), and are insulated gate semiconductor elements in which charge carriers move from the first electrode side to the second electrode side of the semiconductor element through a channel formed by applying a voltage to the gate electrode 75.

[0190] Furthermore, in each of the aforementioned semiconductor modules, multiple conductive components are exposed from the resin molding on either the upper or lower surface of the semiconductor module. These include common wiring electrodes (e.g., 111, 113, 115) electrically connected to at least one of the first and second electrodes, and non-common wiring electrodes (e.g., 101-104, 112, 114, 116). A non-common wiring electrode is an electrode exposed from the resin molding that is electrically connected to an electrode of a semiconductor element different from the common wiring electrode. In other words, a non-common wiring electrode is an electrode exposed from the resin molding that is connected to any electrode of the multiple semiconductor elements included in the semiconductor module, and the connection destination is different from the electrode of the semiconductor element to which the common wiring electrode is connected. Additionally, the wiring width of the common electrode connected to the common wiring electrode is wider than the wiring width of the non-common wiring electrode. Multiple semiconductor elements and multiple conductive components are configured so that, when a common wiring is connected to a common wiring electrode, the common wiring can be provided from one opposite side to the other on the surface of the resin molded part exposed by the common wiring electrode without being electrically connected to a non-common wiring electrode.

[0191] According to semiconductor modules 10-13, 20-23, 30-33, 40, 50, and 160, for example, by arranging multiple semiconductor modules adjacently and connecting their shared wiring with electrodes, multiple semiconductor modules can be electrically connected to each other in the vertical direction of the semiconductor modules. As a result, the wiring space on the lateral side of the semiconductor modules can be reduced, which helps to miniaturize the mounting substrate. In addition, the wiring led to the lateral side of the semiconductor modules for connecting multiple semiconductor elements can be omitted. As a result, the wiring area is reduced and the wiring resistance is reduced, which can suppress heat generation from the wiring.

[0192] Semiconductor modules 10-13, 20-23, 30-33, 40, 50, and 160 have common wiring regions (e.g., common wiring regions A1c, A2c, A3c, A4c, A5c, A6a). These common wiring regions are strip-shaped areas extending substantially straight from one opposite side to the other on the surface of the resin molded part exposed by the common wiring electrode. They are areas where a common wiring electrode exists but no non-common wiring electrodes are present. Furthermore, common wiring is provided within these common wiring regions. Because common wiring electrodes are present within these common wiring regions, and no non-common wiring electrodes are present, common wiring can be provided from one opposite side to the other on the surface of the resin molded part exposed by the common wiring electrode (e.g., conductive member 111) without being electrically connected to non-common wiring electrodes (e.g., conductive members 101-104, 112).

[0193] Like semiconductor modules 10-13, 40, and 50, multiple semiconductor elements can be arranged in the same orientation as adjacent semiconductor elements, making them approximately parallel to each other. Alternatively, like semiconductor modules 20-23, 30-33, and 160, multiple semiconductor elements can be arranged in the opposite orientation to adjacent semiconductor elements, making them approximately point-symmetrical to each other.

[0194] Like semiconductor modules 30-33, multiple conductive components may be configured to include a bonding conductive component (conductive component 312) that bonds the first electrode (source electrode) of the first semiconductor element 333 among multiple semiconductor elements and the second electrode (drain electrode) of the second semiconductor element 343 disposed adjacent to the first semiconductor element 333.

[0195] Alternatively, at least one of the electrodes for non-shared wiring may have a higher-order portion (e.g., higher-order portion 112b) facing the surface exposed from the resin molding, and a lower-order portion (e.g., lower-order portion 112a) compared to the higher-order portion. By making the lower-order portion so low that it is not electrically connected to the shared wiring, the shared wiring can be prevented from being electrically connected to the electrode for non-shared wiring. Further, it is preferable that the surface of the lower-order portion near the shared wiring side (e.g., the surface of the lower-order portion in the negative z-axis direction) is insulated. By insulating the surface of the lower-order portion near the shared wiring side, the distance between the shared wiring and the lower-order portion can be narrowed compared to the case where it is not insulated. Further, it is more preferable to insulate the lower-order portion by covering it with an insulating resin molding. That is, it is more preferable that the higher-order portion is exposed from the resin molding, while the lower-order portion is not exposed from the resin molding.

[0196] Alternatively, like semiconductor modules 40 and 50, wiring electrodes can be shared and extended to both protruding positions on opposite sides of the surface of the resin molded part.

[0197] Furthermore, the aforementioned semiconductor modules can also be mounted on a wiring substrate (e.g., wiring substrate 650) using the exposed surface of the common wiring electrode as the mounting surface. Moreover, when the wiring substrate includes wiring portions for the semiconductor modules and solder mask portions surrounding the wiring portions, the resin molding part preferably has a higher thermal conductivity than the solder mask portion. This resin molding part can facilitate heat dissipation from the wiring substrate and the semiconductor modules.

[0198] Like semiconductor modules 10, 20, 30, 40, 50, and 160, the surface of the semiconductor module facing the exposed common wiring electrode can also be covered by a resin molding member. For example, in the case of a wiring substrate 650, as illustrated and described in the semiconductor module 160, which is mounted with the exposed common wiring electrode surface as the mounting surface, and housings 670 and 671 disposed between the exposed common wiring electrode surface and housings 670 and 671, it can be suitably used. Specifically, it can be configured such that heat generated in the semiconductor module or wiring substrate is dissipated to the housing side via the resin molding member by contacting the housing. Furthermore, the resin molding member can also be configured to contact the housing via a heat dissipation member disposed between the resin molding member and the housing. In this case, it is preferable that the thermal conductivity of the heat dissipation member is equal to or greater than the thermal conductivity of the resin molding member.

[0199] The aforementioned semiconductor modules can be suitably used in applications such as electric power steering systems 80, and can contribute to miniaturization and heat dissipation in their drive circuits, etc.

[0200] Furthermore, in the embodiments described above, a trench-gate MOSFET with an n-channel structure formed by applying a gate voltage was exemplified and described as a semiconductor element, but it is not limited to this. For example, a planar gate type or a type with a... Figure 6 The p-channel type, resulting from replacing the p-type and n-type, can also be an insulated-gate bipolar transistor (IGBT) or a reverse-conduction IGBT (RC-IGBT). Furthermore, when the semiconductor element is an IGBT, the emitter electrode is equivalent to the first electrode, and the collector electrode is equivalent to the second electrode. External terminals electrically connected to the emitter electrode are equivalent to the first terminal, and external terminals electrically connected to the collector electrode are equivalent to the second terminal.

[0201] In addition, Figure 8In this design, the switches SU1p to SW2n and SP1, SC1, SP2, and SC2 are not limited to MOSFETs such as the first semiconductor element 133 and the second semiconductor element 143; voltage-controlled semiconductor switching elements such as IGBTs can also be used. When using IGBTs without freewheeling diodes as switches SU1p to SW2n, it is preferable to provide freewheeling diodes for each switch SU1p to SW2n. Specifically, for example, the freewheeling diodes can be connected in anti-parallel to each switch SU1p to SW2n, or a reverse-conducting IGBT (RC-IGBT) with a freewheeling diode formed on the same semiconductor substrate as the IGBT can be used as each switch SU1p to SW2n.

[0202] Furthermore, the shapes of the multiple semiconductor elements, resin molding parts, first bonding members, etc., are not limited to being approximately rectangular in plan view. Also, the number of external terminals is not limited to the number described in the above embodiments. For example, there may be multiple gate terminals for each semiconductor element. Additionally, the drain terminal and source terminal may be one or two terminals, or four or more terminals.

[0203] Although this disclosure has been described based on embodiments, it should be understood that this disclosure is not limited to the above embodiments and structures. This disclosure also includes various modifications and equivalent variations. In addition, various combinations and methods, and further including only one element, one or more other combinations and methods, also fall within the scope and spirit of this disclosure.

Claims

1. A semiconductor module comprising a plurality of semiconductor elements, a resin molding integrally sealing the plurality of semiconductor elements, and a plurality of conductive components electrically connected to at least one of the plurality of semiconductor elements, wherein, The aforementioned semiconductor devices are insulated-gate semiconductor devices comprising a gate electrode, a first electrode, and a second electrode, wherein charge carriers move from the first electrode side to the second electrode side of the semiconductor device via a channel formed by applying a voltage to the gate electrode. The aforementioned plurality of conductive components include: a common wiring electrode, exposed from the resin molding on the upper or lower surface side of the semiconductor module, and electrically connected to at least one of the first electrode and the second electrode; and a non-common wiring electrode, at least a portion of which is exposed from the resin molding and electrically connected to an electrode of the semiconductor element that is different from the common wiring electrode. The width of the common wiring connected to the aforementioned common wiring electrode is wider than the width of the aforementioned non-common wiring electrode corresponding to the gate terminal. By configuring the aforementioned plurality of semiconductor elements and the aforementioned plurality of conductive components, the common wiring can be provided from one opposite side to the other on the surface of the resin molded part exposed by the common wiring electrode without being electrically connected to the non-common wiring electrode when the common wiring is connected to the common wiring electrode. At least one of the aforementioned non-common wiring electrodes has a higher-order portion facing the surface exposed from the resin molded part, and a lower-order portion compared to the higher-order portion. The aforementioned advanced portion is exposed from the aforementioned resin molded part. The aforementioned lower-level portion is not exposed from the aforementioned resin molded part. It has a common wiring area, which is a strip-shaped area extending from one opposite side to the other on the surface of the resin molded part exposed by the common wiring electrode. It is an area where the common wiring electrode is present but the non-common wiring electrode is absent. The aforementioned shared wiring area overlaps with at least a portion of the aforementioned lower-order portion.

2. The semiconductor module according to claim 1, wherein, The aforementioned shared cabling is located within the aforementioned shared cabling area.

3. The semiconductor module according to claim 1, wherein, The aforementioned plurality of semiconductor elements are arranged in the same orientation as the adjacent semiconductor elements, and are parallel to the adjacent semiconductor elements.

4. The semiconductor module according to claim 1, wherein, The aforementioned plurality of semiconductor elements are arranged in an orientation opposite to that of the adjacent semiconductor elements, thus being point-symmetric to the adjacent semiconductor elements.

5. The semiconductor module according to claim 1, wherein, The plurality of conductive components include a bonding conductive component that bonds the first electrode of the first semiconductor element and the second electrode of the second semiconductor element disposed adjacent to the first semiconductor element.

6. The semiconductor module according to claim 1, wherein, The aforementioned common wiring electrode extends to a position protruding from both sides of a pair of opposing edges of the surface of the aforementioned resin molded part.

7. The semiconductor module according to claim 1, wherein, The aforementioned semiconductor module is mounted on the wiring substrate using the exposed surface of the common wiring electrode as the mounting surface. The aforementioned wiring substrate includes a wiring portion for mounting the aforementioned semiconductor module, and a solder mask portion disposed around the wiring portion. The above-mentioned resin molded parts have higher thermal conductivity compared to the above-mentioned solder resist parts.

8. The semiconductor module according to claim 1, wherein, The surface of the semiconductor module facing the exposed common wiring electrode is covered by the resin molding.

9. The semiconductor module according to claim 8, wherein, The wiring substrate is disposed between a wiring board on which the semiconductor module is mounted with the exposed surface of the common wiring electrode as a mounting surface, and a housing disposed on the side opposite to the exposed surface of the common wiring electrode. The heat generated in the semiconductor module or the wiring substrate is dissipated to the housing via the resin molding.

10. The semiconductor module according to claim 9, wherein, The aforementioned resin molded part contacts the aforementioned housing via a heat dissipation component disposed between the molded part and the housing. The thermal conductivity of the aforementioned heat dissipation component is greater than or equal to that of the aforementioned resin molded part.

11. The semiconductor module according to any one of claims 1 to 10, wherein, It is integrated into the electric power steering system.

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