A single event injection simulation method and a single event injection simulation device

Abstract

The application discloses a single particle injection method and a single particle injection device, and relates to the field of storage. The single particle injection method is suitable for the single particle injection device. The single particle injection device structure comprises a host and at least one single particle injection device. The host receives a starting instruction, and transmits the starting instruction to the single particle injection device. In response to the starting instruction, the at least one single particle injection device generates a field effect, and transmits the field effect to a receiving target. In response to the field effect, the potential state of the receiving target is changed. It can be seen that the embodiment of the application provides a single particle injection method and a single particle injection device. The single particle injection device releases and transmits a field effect to the receiving target. The field effect induces the change of the potential state of the semiconductor device of the receiving target. Moreover, the release, intensity and period of the field effect can be controlled according to requirements, so that artificial single particle injection is realized.

Description

Technical Field

[0001] This invention relates to the field of storage, and specifically to a single-particle injection simulation method and a single-particle injection simulation device. Background Technology

[0002] Single-event upsets (SEUs) refer to the phenomenon where a single high-energy particle in the universe enters the sensitive region of a semiconductor device, causing the device's logic state to flip. Furthermore, due to the highly complex space environment, including optical, magnetic, electric, and thermal effects, these field effects affect complementary metal-oxide-semiconductor (CMOS) electronic components in computers, leading to semiconductor device performance degradation and data loss.

[0003] Research on SEUs revealed that, based on their impact on electronic components, particularly non-volatile memories, they can be applied in electronic countermeasures or stress testing of electronic components. Currently, SEUs are typically induced by single-event injection using natural conditions such as cosmic rays; artificial methods for single-event injection remain in the exploratory stage. Summary of the Invention

[0004] This invention provides a single-particle injection simulation method and a single-particle injection simulation device to achieve artificial single-particle injection and thus artificial single-particle flipping of the receiving target.

[0005] To address the aforementioned problems, a first aspect of the present invention provides a single-particle injection simulation method applicable to a single-particle injection simulation device. The single-particle injection simulation device includes a host computer and at least one single-particle injection simulation apparatus. The host computer is used to receive and transmit data information, and the single-particle injection simulation apparatus is used to release field effects to change the potential state during a target period. The method includes:

[0006] The host receives the start command and transmits the start command to the single-particle injection simulation device;

[0007] In response to the activation command, the at least one single-particle injection simulation device generates a field effect and transmits the field effect to the receiving target;

[0008] In response to the field effect, the receiving target potential state changes.

[0009] In some embodiments, the field effect includes at least one of the following: optical field effect, magnetic field effect, electric field effect, and thermal field effect.

[0010] In some embodiments, the single-particle injection simulation device includes at least one of the following generators: a light field generator, a magnetic field generator, an electric field generator, and a thermal field generator.

[0011] In some embodiments, the receiving target includes: a non-volatile memory.

[0012] In some embodiments, in response to the activation command, the output modes of the single-particle injection simulation device to the receiving target include: single output and periodic output.

[0013] In some embodiments, the single-particle injection simulation method further includes: determining subsequent injection requirements based on the received target potential state;

[0014] If the potential state of the receiving target changes before the field effect received by the receiving target ends, then the injection is stopped;

[0015] If the potential state of the receiving target does not change after the field effect received by the receiving target ends, the current state is fed back to the host, and the host then feeds back to the user to confirm the subsequent injection requirements.

[0016] In another aspect, this application also proposes a single-particle injection simulation device, comprising: a host computer and at least one single-particle injection simulation device, wherein the host computer is connected to the at least one single-particle injection simulation device.

[0017] The host is used to receive and transmit data information;

[0018] The single-particle injection simulation device is used to generate a field effect to the receiving target, thereby changing the electronic state of the receiving target through the field effect.

[0019] In some embodiments, the single-particle injection simulation device is provided with at least one of the following generators: a magnetic field generator, a light field generator, and a thermal field generator.

[0020] In some embodiments, the single-particle injection simulation device further includes a result detection device, which is connected to the host and the receiving target, for confirming and collecting the single-particle flipping result of the receiving target and sending the result data information to the host.

[0021] Embodiments of the present invention provide a single-event injection simulation method and a single-event injection simulation device. The single-event injection simulation device releases and transmits a field effect to a receiving target, inducing a potential state transition in the semiconductor device of the receiving target, from a high state to a low state or vice versa. Furthermore, the intensity, frequency, and period of the field effect release can be controlled according to actual needs, thereby achieving artificial single-event injection into the receiving target. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application.

[0023] Figure 1 This is a schematic diagram of a single-particle injection method according to an embodiment of this application;

[0024] Figure 2 This is a schematic diagram of the structure and connection of a single-particle injection simulation device according to an embodiment of this application;

[0025] Figure 3 A schematic diagram of a single-event upset occurring in a single memory cell of a receiving target according to an embodiment of this application;

[0026] Figure 4 This is a schematic diagram of a receiving target according to an embodiment of this application. Detailed Implementation

[0027] To make the inventive objectives, features, and advantages of this application more apparent and understandable, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0028] Those skilled in the art will understand that the terms "first," "second," etc., in this application are only used to distinguish different devices, modules, or parameters, and do not represent any specific technical meaning, nor do they indicate any necessary logical order between them.

[0029] Single-event upsets (SEUs) refer to the phenomenon where a single high-energy particle enters the sensitive region of a semiconductor device in space, causing the device's logic state to flip. This is because a large number of high-energy charged particles exist in the space environment. Complementary metal-oxide-semiconductor (CMOS) electronic components in computers are exposed to the Earth's magnetic field, cosmic rays, etc., causing a jump in their potential state.

[0030] Research on SEUs revealed that, based on their impact on electronic components, particularly non-volatile memories, they can be applied in electronic countermeasures or stress testing of electronic components. Currently, SEUs are typically induced by single-event injection using natural conditions such as cosmic rays; artificial methods for single-event injection remain in the exploratory stage.

[0031] In one embodiment of this application, a single-event injection simulation method is proposed, applicable to a single-event injection simulation device. The single-event injection simulation device includes a host computer and at least one single-event injection simulation apparatus. The host computer is used to receive and transmit data information, and the single-event injection simulation apparatus is used to release field effects to change the potential state of a target device, such as... Figure 1 As shown, the method includes:

[0032] The host receives the start command and transmits the start command to the single-particle injection simulation device;

[0033] In response to the activation command, the at least one single-particle injection simulation device generates a field effect and transmits the field effect to the receiving target;

[0034] In response to the field effect, the receiving target potential state changes.

[0035] Optionally, the field effect includes at least one of the following: optical field effect, magnetic field effect, electric field effect, and thermal field effect.

[0036] Optionally, the single-particle injection simulation device includes at least one of the following generators: a light field generator, a magnetic field generator, an electric field generator, and a thermal field generator.

[0037] Optionally, the receiving target includes: non-volatile memory.

[0038] Optionally, in response to the activation command, the output modes of the single-particle injection simulation device to the receiving target include: single output and periodic output;

[0039] The single output can be regarded as the field effect generated and output by the single particle injection simulation device on the receiving target with a period of 1.

[0040] The periodic output can be viewed as the field effect generated and output by the single-particle injection simulation device to the receiving target, with a period greater than 1.

[0041] Optionally, the single-particle injection simulation method further includes: determining subsequent injection requirements based on the received target potential state;

[0042] Specifically, if the potential state of the receiving target changes before the field effect received by the receiving target ends, the injection is stopped;

[0043] If the field effect received by the receiving target ends and the potential state of the receiving target remains unchanged, the current state is fed back to the host, which then feeds back to the user to confirm subsequent injection requirements.

[0044] If injection is still required, the host continues to transmit data information to the single-particle injection simulation device to continue injection; if injection is not required, the host transmits data information to the single-particle injection simulation device to stop injection.

[0045] In another embodiment of this application, a single-particle injection simulation device is also provided, comprising: a host computer and at least one single-particle injection simulation device, wherein the host computer is connected to the at least one single-particle injection simulation device.

[0046] The host is used to receive and transmit data information;

[0047] The single-particle injection simulation device is used to generate a field effect to the receiving target, thereby changing the electronic state of the receiving target through the field effect.

[0048] Optionally, the field effect includes at least one of the following: optical field effect, magnetic field effect, electric field effect, and thermal field effect.

[0049] Optionally, the single-particle injection simulation device is equipped with at least one of the following generators: a light field generator, a magnetic field generator, an electric field generator, and a thermal field generator.

[0050] Optionally, the receiving target includes: non-volatile memory.

[0051] Optionally, the output mode of the single-particle injection simulation device to output the field effect to the receiving target includes: single output and periodic output;

[0052] The single output can be regarded as the field effect generated and output by the single particle injection simulation device on the receiving target with a period of 1.

[0053] The periodic output can be viewed as the field effect generated and output by the single-particle injection simulation device to the receiving target, with a period greater than 1.

[0054] Optionally, the single-particle injection simulation device further includes a result detection device, such as... Figure 2 As shown, the result detection device is connected to the host and the receiving target, and is used to confirm and collect the single-particle flip results of the receiving target, and send the result data information to the host.

[0055] In one embodiment of this application, magnetic random access memory (MRAM) based on magnetic tunnel junction (MTJ) has excellent characteristics such as fast read and write speed, low power consumption, long endurance and non-volatility, and is expected to become the next generation of general-purpose memory.

[0056] When the receiving target is a magnetic storage device, the single-particle injection simulation method mentioned in this application specifically includes:

[0057] The host receives the start command and transmits the start command to the single-particle injection simulation device;

[0058] In response to the activation command, the at least one single-particle injection simulation device, which is equipped with a magnetic field generator, receives the command and generates a magnetic field effect on the target.

[0059] In response to the magnetic field effect, the direction of the free layer magnetic moment of the magnetic tunnel junction changes from a first direction to a second direction, wherein the first direction is opposite to the second direction;

[0060] In response to the change in the direction of the free layer magnetic moment, the resistance state of the magnetic tunnel junction changes from the first resistance state to the second resistance state, that is, from the high resistance state to the low resistance state ("1"→"0") or from the high resistance state to the low resistance state ("0"→"1").

[0061] Optionally, the single-particle injection simulation method can specify the resistance state transition of a magnetic tunnel junction in the magnetic memory by setting specific field effect strengths and excitation frequencies. For example... Figure 3 As shown, the original resistance states of the magnetic memory are all represented by right-hand arrows. After using the single-particle injection simulation method, the resistance state of one of the magnetic tunnel junctions changes, and the change in resistance state is represented by a left-hand arrow.

[0062] Optionally, the single-particle injection simulation method can specify the resistance state transition of the magnetic tunnel junction within a region (more than one) of the magnetic memory by setting specific field effect strengths and excitation frequencies. For example... Figure 4 As shown, the original resistance states of the magnetic memory are all represented by right-hand arrows. After using the single-particle injection simulation method, the resistance states of the magnetic tunnel junction in one region (12 in the figure) change, and the resistance state change is represented by left-hand arrows.

[0063] In another embodiment of this application, when the receiving target is a magnetic storage device, the single-particle injection simulation device mentioned in this application specifically includes:

[0064] The host computer and at least one single-particle injection simulation device are connected to each other.

[0065] The host is used to receive and transmit data information;

[0066] Each of the single-particle injection simulation devices is equipped with at least one magnetic field generator to produce a magnetic field effect, thereby changing the resistance state of the magnetic tunnel junction.

[0067] Optionally, the single-particle injection simulation device further includes a result detection device for confirming whether the magnetic tunnel junction resistance state has changed, and sending the confirmation result to the host.

[0068] Embodiments of the present invention provide a single-event injection simulation method and a single-event injection simulation device. The single-event injection simulation device releases and transmits a field effect to a receiving target, inducing a potential state transition in the semiconductor device of the receiving target, from a high state to a low state or from "0" to "1". Furthermore, the intensity, frequency, and period of the field effect release can be controlled according to actual needs, thereby achieving artificial single-event injection into the receiving target.

[0069] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A single particle implantation simulation method, characterized by, The single particle injection simulation device is suitable for a single particle injection simulation device, and the structure of the single particle injection simulation device comprises a host and at least one single particle injection simulation device, The host is used to receive and transmit data information, The single particle injection simulation device is used to release a field effect to change the potential state of a receiving target, The method comprises: The host receives a start instruction and transmits the start instruction to the single particle injection simulation device; In response to the start instruction, the at least one single particle injection simulation device generates a field effect and transmits the field effect to a receiving target; In response to the field effect, the potential state of the receiving target changes; The receiving target is a magnetic memory; In response to a magnetic field effect, the direction of the free layer magnetic moment of the magnetic tunnel junction of the magnetic memory changes from a first direction to a second direction, and the first direction is opposite to the second direction; By setting a specific magnetic field effect strength and an excitation frequency, the resistance state of one of the magnetic tunnel junctions or the magnetic tunnel junctions in a region of the magnetic memory changes.

2. The single particle implant simulation method of claim 1, wherein, The field effect comprises at least one of the following: an optical field effect, a magnetic field effect, an electric field effect, and a thermal field effect.

3. The single particle implant simulation method of claim 1, wherein, The receiving target comprises a non-volatile memory.

4. The single particle implant simulation method of claim 1, wherein, In response to the start instruction, the output mode of the single particle injection simulation device outputting the field effect to the receiving target comprises single output and periodic output.

5. The single particle implant simulation method of claim 1, wherein, The single particle injection simulation method further comprises judging subsequent injection requirements according to the potential state of the receiving target; If the potential state of the receiving target changes before the receiving target receives the field effect, the injection is stopped; If the potential state of the receiving target does not change after the receiving target receives the field effect, the current state is fed back to the host, and the subsequent injection requirements are confirmed by the host and the user.

6. A single particle implantation simulation device characterized by, The single particle injection simulation device comprises a host and at least one single particle injection simulation device, and the host is connected to the at least one single particle injection simulation device, The host is used to receive and transmit data information, The single particle injection simulation device is used to generate a field effect to a receiving target, and the electronic state of the receiving target is changed by the field effect; The receiving target is a magnetic memory; In response to a magnetic field effect, the direction of the free layer magnetic moment of the magnetic tunnel junction of the magnetic memory changes from a first direction to a second direction, and the first direction is opposite to the second direction; By setting a specific magnetic field effect strength and an excitation frequency, the resistance state of one of the magnetic tunnel junctions or the magnetic tunnel junctions in a region of the magnetic memory changes.

7. The single particle implantation simulation device of claim 6, wherein, The single particle injection simulation device is internally provided with at least one generator, comprising a magnetic field generator, an optical field generator, and a thermal field generator; The field effect comprises at least one of the following: an optical field effect, a magnetic field effect, an electric field effect, and a thermal field effect.

8. The single particle implantation simulation device of claim 6, wherein, The receiving target comprises a non-volatile memory.

9. The single particle implantation simulation device of claim 6, wherein, The output mode of the single particle injection simulation device outputting the field effect to the receiving target comprises single output and periodic output.

10. The single particle implantation simulation device of claim 6, wherein, The single particle injection simulation device further comprises result detection apparatus connected to the host computer and the receiving target, configured to confirm and collect the single particle flip results of the receiving target, and send the data information of the results to the host computer.

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