Adjustable and non-adjustable heat shields for influencing the temperature distribution profile of a substrate support

Abstract

A heat shield for a platen of a substrate support includes a body and an absorption- reflection-transmission region. The absorption-reflection-transmission region is in contact with the body and is configured to at least one of influence or adjust at least a portion of a heat flow pattern between a distal reference surface and the platen. The absorption-reflection-transmission region includes an adjustable aspect to adjust the at least a portion of the heat flow pattern.

Description

[0001] Cross-reference to related applications

[0002] This application claims the benefits of U.S. Provisional Application No. 62 / 907,082, filed September 27, 2019, and U.S. Provisional Application No. 62 / 951,395, filed December 20, 2019. The entire disclosure of the above-cited applications is incorporated herein by reference. Technical Field

[0003] This disclosure relates to thermal shielding for substrate processing systems. Background Technology

[0004] The background description provided herein is for the purpose of presenting the general context of this disclosure. The work of the currently designated inventors, within the scope described in this background section and in the various aspects of the specification that could not be identified as prior art at the time of filing, neither expressly nor impliedly acknowledges that it is prior art to this disclosure.

[0005] Substrate processing systems can be used to process substrates such as semiconductor wafers. Examples of substrate processing include etching, deposition, etc. During processing, the substrate is placed on a substrate support (e.g., an electrostatic chuck (ESC) or a vacuum chuck), and one or more processing gases can be directed into the processing chamber.

[0006] One or more process gases can be transported to the processing chamber via a gas transport system. In some systems, the gas transport system includes a manifold connected to a nozzle located within the processing chamber. For example, during plasma-enhanced chemical vapor deposition (PECVD) processing, a substrate can be placed on an ESC or vacuum chuck within a substrate processing system, and a thin film can be deposited on the substrate. This process involves a chemical reaction that occurs after the formation of plasma by reactant gases and the discharge of radio frequency (RF) alternating current (AC) or direct current (DC). Summary of the Invention

[0007] A heat shield is provided for a stage of a substrate support. The heat shield includes a body and absorption-reflection-transmission regions. The absorption-reflection-transmission regions are in contact with the body and configured to influence at least a portion of a heat flow pattern between a distal reference surface and the stage. The plurality of absorption-reflection-transmission regions include adjustable aspects to adjust the at least a portion of the heat flow pattern.

[0008] In other features, the absorption- reflection- transmission regions are configured to affect at least a portion of the heat flow pattern between the remote reference surface and the platen. In other features, the body has a modular structure that includes the absorption- reflection- transmission regions. In other features, one or more of the absorption- reflection- transmission regions includes one or more holes. In other features, one or more of the absorption- reflection- transmission regions includes at least one of (i) one or more ridges, or (ii) one or more grooves.

[0009] In other features, one or more of the absorption- reflection- transmission regions includes at least one of (i) multiple different thicknesses, or (ii) multiple layers of different materials. In other features, one or more of the absorption- reflection- transmission regions is implemented as at least one of a cover layer or a radially adjacent layer. In other features, the absorption- reflection- transmission regions are implemented as segments that are at least one of adjustable, movable, interchangeable, or replaceable to adjust the heat flow pattern.

[0010] In other features, the body is configured to be attached to a shaft at a location between the platen and the remote reference surface that is a surface of a process chamber wall or other surface that affects a radiation boundary condition. In other features, one or more of the absorption- reflection- transmission regions is adjustable to control azimuthal and radial temperature non-uniformities of at least one of the platen or a substrate.

[0011] In other features, the body is configured to be attached to a shaft at a location between the platen and the remote reference surface that is a surface of a process chamber wall. In other features, one or more of the absorption- reflection- transmission regions is adjustable to control azimuthal and radial temperature non-uniformities of the platen.

[0012] In other features, the multiple absorption- reflection- transmission regions are disposed at different azimuthal or radial locations on the body. In other features, one or more of the absorption- reflection- transmission regions has at least one of a different shape, size, material, profile, or pattern than another one or more of the multiple absorption- reflection- transmission regions.

[0013] In other features, a heat shield for a platen of a substrate support is provided. The heat shield includes a body and absorption-reflectance-transmission portions. The absorption-reflectance-transmission portions are in contact with or disposed as part of the body and are configured to affect at least a portion of a heat flow pattern between a distal reference surface and the platen. One or more of the absorption-reflectance-transmission portions include at least one heat flow varying characteristic that is different from another or more of the absorption-reflectance-transmission portions.

[0014] In other features, the absorption-reflectance-transmission portions are at least one of a dispersion portion, a plurality of layers, or a blanket layer. In other features, the absorption-reflectance-transmission portions are disposed at least one of radially or azimuthally with respect to one another. In other features, the absorption-reflectance-transmission portions are at different azimuthal or radial locations on the body.

[0015] In other features, one or more of the absorption-reflectance-transmission portions include one or more holes. In other features, one or more of the absorption-reflectance-transmission portions include at least one of (i) one or more ridges, or (ii) one or more grooves.

[0016] In other features, one or more of the absorption-reflectance-transmission portions include at least one of a plurality of thicknesses or different materials. In other features, one or more of the absorption-reflectance-transmission portions are implemented as different at least one of a blanket layer or radially adjacent layers.

[0017] In other features, the body is configured to be attached to a shaft at a location between the platen and the distal reference surface, which is a surface of a process chamber wall. In other features, the absorption-reflectance-transmission portions are configured to minimize azimuthal and radial temperature non-uniformities of the platen.

[0018] In other features, one or more of the absorption-reflectance-transmission portions have at least one shape, size, material, profile, or pattern that is different from another or more of the absorption-reflectance-transmission portions. In other features, the heat shield further includes a holding clamp, which includes the body. The absorption-reflectance-transmission portions are implemented as segments that extend radially outward from a sidewall of the body.

[0019] In other features, a heat shield for a platen of a substrate support is provided. The heat shield includes a body and an absorption- reflection-transmission region. The absorption- reflection-transmission region is in contact with the body and is configured to at least one of: affect or adjust at least a portion of a radiative heat flux transfer pattern between a remote reference surface and the platen. The absorption- reflection-transmission region includes an adjustable aspect to adjust the at least a portion of the radiative heat flux transfer pattern. In other features, a heat shield for a platen of a substrate support is provided. The heat shield includes a body and a plurality of absorption- reflection-transmission portions. The absorption- reflection-transmission portions are in contact with the body, or are disposed as part of the body, and are configured to at least one of: affect or adjust at least a portion of a radiative heat flux transfer pattern between a remote reference surface and the platen. One or more of the absorption- reflection-transmission portions includes at least one radiative heat flux transfer characteristic that is different from another or more of the plurality of absorption- reflection-transmission portions.

[0020] A heat shield for a platen of a substrate support is provided. The heat shield includes a plurality of absorption- reflection-transmission segments and a frame. The frame includes: a central opening configured to receive a central shaft of the substrate support; a plurality of tabs projecting radially inward to engage with a groove portion of the central shaft; and a plurality of window portions configured to be at least partially covered by the absorption- reflection-transmission segments in a plurality of designated locations. The absorption- reflection-transmission segments are configured to be disposed in or over at least one of the plurality of window portions and are held by the frame. In other features, the absorption- reflection-transmission segments and the frame thermally shield a portion of the processing chamber wall from the platen.

[0021] In other features, the heat shield includes a frame. The absorption- reflection-transmission region is implemented as a plurality of absorption- reflection-transmission segments. The frame includes: a central opening configured to receive a shaft of the substrate support; and a plurality of window portions configured to be at least partially covered by the absorption- reflection-transmission segments in a plurality of designated locations. The body is implemented as the frame. The absorption- reflection-transmission segments are configured to be disposed in or over at least one of the plurality of window portions and are held by the frame. In other features, the frame is annular or polygonal. In other features, the frame includes a plurality of tabs to engage with hardware components.

[0022] In other features, the window portions include respective edges. The edges are configured to be in contact with or to engage the absorption- reflection-transmission segments in the designated locations.

[0023] In other features, the window portions include respective shelf portions. The shelf portions are configured to hold the absorption- reflection-transmission segments in the designated positions. The absorption- reflection-transmission segments are configured to be disposed in the plurality of window portions and on the shelf portions.

[0024] In other features, one or more of the absorption- reflection-transmission segments are reflection segments and reflect thermal energy received from the platen back to the platen. In other features, one or more of the absorption- reflection-transmission segments are absorption segments and absorb thermal energy emitted by the platen.

[0025] In other features, one or more of the absorption- reflection-transmission segments are transmission segments and enable a portion of thermal energy emitted from the platen to pass through the one or more of the absorption- reflection-transmission segments to the distal reference surface. In other features, one or more of the absorption- reflection-transmission segments are shaped to alter an effect of the one or more of the absorption- reflection-transmission segments on azimuthal temperature non-uniformity across the platen. In other features, one or more of the plurality of absorption- reflection-transmission segments are shaped to alter an effect of the one or more of the plurality of absorption- reflection-transmission segments on radial temperature non-uniformity across the platen. In other features, the frame is annular.

[0026] In other features, each of the absorption- reflection-transmission segments is modular and can be disposed in a plurality of positions within the window portions. In other features, at least two of the plurality of absorption- reflection-transmission segments are different sizes. In other features, the plurality of absorption- reflection-transmission segments are wedge-shaped. In other features, the plurality of absorption- reflection-transmission segments are circular.

[0027] In other features, the frame includes a first portion and a second portion. The first portion includes the plurality of window portions. The second portion includes a channel and a ridge. The channel reflects thermal energy emitted by the platen back to the platen. In other features, at least one of the absorption- reflection-transmission segments is at least partially transparent. In other features, at least one of the absorption- reflection-transmission segments includes a plurality of layers.

[0028] In other features, the plurality of layers includes pairs of layers and an intermediate layer. Each of the pairs of layers includes sapphire. The intermediate layer is disposed between the pairs of layers. The intermediate layer includes ceramic.

[0029] In other features, the layers include a pair of layers and an intermediate layer. Each of the pair of layers includes sapphire. The intermediate layer is disposed between the pair of layers. The intermediate layer includes at least one of a ceramic, a refractory material, or a metal.

[0030] In other features, the absorption-reflectance-transmission segments include a plurality of keyed sides. The frame includes a plurality of keyed projections for engaging the keyed sides of the absorption-reflectance-transmission segments. In other features, the central opening of the frame is configured to receive at least a first portion of a thermal barrier. The frame is configured to be disposed on a second portion of the thermal barrier. In other features, each of the window portions has a predetermined number of designated areas for one or more of the absorption-reflectance-transmission segments.

[0031] In other features, a heat shield assembly is provided and includes the heat shield and a first thermal barrier. In other features, the heat shield assembly includes a second thermal barrier. The heat shield is configured to be disposed on and engaged with the first thermal barrier. The first thermal barrier is configured to be disposed on and engaged with the second thermal barrier.

[0032] In other features, a substrate support is provided and includes the heat shield, the first thermal barrier, the central shaft, and the platen. The first thermal barrier is connected to the central shaft. The heat shield is a first heat shield disposed on the first thermal barrier.

[0033] In other features, the substrate support further includes a second thermal barrier connected to the central shaft and a second heat shield disposed on the second thermal barrier. In other features, a radially innermost edge of the heat shield is free of contact with the central shaft.

[0034] In other features, a heat shield for a platen of a substrate support of a substrate processing system is provided. The heat shield includes absorption-reflectance-transmission regions implemented as a plurality of absorption-reflectance-transmission segments and a frame. The frame includes a central opening for a central shaft and a plurality of window portions. The central opening is configured to receive at least a portion of a first thermal barrier. The window portions are configured to hold the plurality of absorption-reflectance-transmission segments in designated positions. The absorption-reflectance-transmission segments are configured to be at least one of disposed in or located above the plurality of window portions. The absorption-reflectance-transmission segments and the frame thermally isolate a portion of a processing chamber wall from the platen.

[0035] In other features, one or more of the absorption- reflection-transmission segments are shaped to alter the effect of azimuthal temperature non-uniformity across the platen on the absorption- reflection-transmission segments. In other features, one or more of the absorption- reflection-transmission segments are shaped to alter the effect of radial temperature non-uniformity across the platen on the absorption- reflection-transmission segments.

[0036] In other features, the absorption- reflection-transmission segments include a first absorption- reflection-transmission segment and a second absorption- reflection-transmission segment. The second absorption- reflection-transmission segment is a different size than the first absorption- reflection-transmission segment. In other features, the first thermal barrier is hexagonal.

[0037] In other features, the heat shield assembly is provided and includes the heat shield and the first thermal barrier. In other features, the heat shield assembly includes a second thermal barrier configured to be coupled to the central shaft. The first thermal barrier is configured to be disposed on the second thermal barrier.

[0038] In other features, the central opening is hexagonal. The at least one portion of the first thermal barrier is hexagonal and is engaged with the central opening. The second thermal barrier includes twelve sides. Six of the twelve sides of the second thermal barrier are configured to be engaged with six sides of the first thermal barrier.

[0039] In other features, a heat shield is provided for a platen of a substrate support of a substrate processing system. The heat shield includes a body. The body includes a central opening for a central shaft, wherein the central opening is configured to receive at least a portion of a first thermal barrier; a first portion including a first channel and a first ridge, wherein the first channel reflects thermal energy emitted by the platen back to the platen; a second portion including a second channel and a second ridge, wherein the second channel transmits thermal energy received from the platen to a processing chamber wall; and an overlap portion disposed between the first portion and the second portion. In other features, the body is configured to thermally shield a portion of the processing chamber wall from the platen. In other features, the overlap portion does not include a channel.

[0040] In other features, a heat shield for a platen of a substrate support is provided. The heat shield includes: an absorption- reflection-transmission section; and a holding clamp. The holding clamp includes: a body configured to connect to a central shaft of a substrate processing chamber; and a sidewall having a slot portion. Each of the slot portions is configured to receive a respective portion of one of the absorption- reflection-transmission sections. The absorption- reflection-transmission section is cantilevered such that the absorption- reflection-transmission section is supported by a first portion of the sidewall and a second portion of the sidewall, where the first portion of the sidewall is below the absorption- reflection-transmission section and the second portion of the sidewall is above the absorption- reflection-transmission section.

[0041] In other features, the slot portions and the absorption- reflection-transmission sections are configured such that each of the absorption- reflection-transmission sections can be held in any of the slot portions. In other features, the absorption- reflection-transmission sections are wedge-shaped. In other features, the absorption- reflection-transmission sections include a through-hole for mounting the absorption- reflection-transmission sections to or removing the absorption- reflection-transmission sections from the holding clamp. In other features, the absorption- reflection-transmission sections are disposed around the holding clamp so as to affect the heat flow pattern in 360° around the central shaft.

[0042] In other features, one or more of the plurality of absorption- reflection-transmission sections includes at least one of: (i) one or more holes, or (ii) one or more pockets.

[0043] In other features, each of the absorption- reflection-transmission sections has a vertical offset from an adjacent pair of the absorption- reflection-transmission sections. In other features, the absorption- reflection-transmission sections are alternately located in vertical positions around the holding clamp such that every other one of the absorption- reflection-transmission sections is in a first vertical position and the other ones of the absorption- reflection-transmission sections are in a second vertical position; and the second vertical position is higher than the first vertical position.

[0044] In other features, a method of manufacturing a heat shield for a platen of a substrate support is provided. The method includes designing a first heat shield to provide one or more critical dimensions of a first substrate, including setting a plurality of parameters of the first heat shield to provide a predetermined heat flux pattern variation characteristic during use of the first heat shield; machining the first heat shield according to the parameters; performing a deposition or etching operation to deposit a layer on a first substrate or etch a layer of the first substrate while using the first heat shield; performing a metrology operation to measure the one or more critical dimensions; analyzing data resulting from performing the metrology operation; and determining whether to redesign the first heat shield to meet a first predetermined criterion for the one or more critical dimensions.

[0045] In other features, the method further includes, in response to determining to redesign the first heat shield: adjusting the parameters to provide the predetermined heat flux pattern variation characteristic; machining a second heat shield according to the adjusted parameters; performing a deposition or etching operation to deposit a layer on a second substrate or etch a layer of the second substrate while using the second heat shield; performing a metrology operation to measure the one or more critical dimensions; analyzing data resulting from performing the metrology operation; and determining whether to redesign the second heat shield to meet the first predetermined criterion for the one or more critical dimensions.

[0046] In other features, the method further includes: reconfiguring the first heat shield to fine tune one or more of the parameters to set or improve the one or more critical dimensions; performing a deposition or etching operation to deposit a layer on a second substrate or etch a layer of the second substrate while using the first heat shield; performing a metrology operation to measure the one or more critical dimensions; analyzing data resulting from performing the metrology operation; and determining whether to redesign the first heat shield to meet the first predetermined criterion for the one or more critical dimensions.

[0047] In other features, fine tuning the one or more parameters of the heat shield includes at least one of determining a number of absorption- reflection-transmission segments to include, determining locations of the absorption- reflection-transmission segments on a body of the heat shield, or determining a type of the absorption- reflection-transmission segments.

[0048] In other features, the method further includes machining a monolithic heat shield based on the fine tuned one or more parameters. In other features, the method further includes machining a monolithic heat shield based on the parameters.

[0049] The further scope of the applicability of this disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. Attached Figure Description

[0050] This disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0051] Figure 1 This is a functional block diagram of a substrate processing system according to an embodiment of the present disclosure, wherein the substrate processing system includes a processing chamber with a heat shield;

[0052] Figure 2 This is a cross-sectional view of a substrate support according to an embodiment of the present disclosure, wherein the substrate support includes a platform and a heat shield;

[0053] Figure 3 This is a perspective view of the heat shield and the corresponding wedge-shaped absorption-reflection-transmission (ART) segment according to an embodiment of this disclosure;

[0054] Figure 4 This is a top view of another heatsink according to an embodiment of the present disclosure, wherein the other heatsink includes a ridged reflective section;

[0055] Figure 5 This is a top cross-sectional view of a processing chamber according to an embodiment of the present disclosure, wherein the processing chamber includes another heat shield having a solid portion without an ART section and another portion with a wedge-shaped heat absorption section.

[0056] Figure 6 This is a top cross-sectional view of a processing chamber according to an embodiment of the present disclosure, wherein the processing chamber includes another heat shield having a solid portion without an ART section and another portion having a circular ART section;

[0057] Figure 7 This is a top cross-sectional view of a processing chamber according to an embodiment of the present disclosure, wherein the processing chamber includes another heat shield having a reflector portion and another portion, wherein the other portion includes a circular ART section;

[0058] Figure 8 This is a top cross-sectional view of another heat shield according to an embodiment of the present disclosure, wherein the other heat shield has a reflector portion and a emitter portion;

[0059] Figure 9 yes Figure 8 The bottom perspective of the hotspot.

[0060] Figure 10 yes Figure 8 A partial side-perspective view of the hotspot.

[0061] Figure 11 is a top view of another heat screen according to embodiments of the present disclosure, wherein the another heat screen comprises wedge-shaped ART segments of the same size and a thermal barrier;

[0062] Figure 12 is a top view of another heat screen according to embodiments of the present disclosure, wherein the another heat screen comprises wedge-shaped ART segments of different sizes and a thermal barrier;

[0063] Figure 13 is a top view of a heat screen according to embodiments of the present disclosure; Figures 11-12 is a top perspective view of the frame and thermal barrier of the heat screen of

[0064] Figure 14 is a top perspective view of the first thermal barrier of the heat screen of Figures 11-12

[0065] Figure 15 is a top perspective view of the second thermal barrier of the heat screen of Figures 11-12

[0066] Figure 16 is a top perspective view of a wedge-shaped segment according to embodiments of the present disclosure, wherein the wedge-shaped segment is in the form of a plate and has a window portion;

[0067] Figure 17 is a top perspective view of a wedge-shaped segment according to embodiments of the present disclosure, wherein the wedge-shaped segment has an upper surface of different heights;

[0068] Figure 18 is a top perspective view of a wedge-shaped segment according to embodiments of the present disclosure, wherein the wedge-shaped segment has double radially inwardly recessed ends;

[0069] Figure 19 is a top perspective view of a wedge-shaped segment according to embodiments of the present disclosure, wherein the wedge-shaped segment has a thick hollow body;

[0070] Figure 20 is a perspective view of different wedge-shaped segments according to embodiments of the present disclosure;

[0071] Figure 21 is a perspective view of another heat screen, wherein the another heat screen comprises several wedge-shaped segments of Figure 17 ;

[0072] Figure 22 is a perspective view of a frame of a heat screen, wherein the frame comprises locking tabs for the wedge-shaped segments;

[0073] Figure 23 ​​is a top perspective view of a processing chamber, a segmented heat shield, a cantilevered ART segment, and a holding clamp (but not a frame) according to embodiments of the present disclosure, wherein the segmented heat shield has an offset;

[0074] Figure 24 is a side view of a substrate support according to embodiments of the present disclosure, wherein the substrate support includes a platen, and a stacked heat shield;

[0075] Figure 25 is a side view of an ART segment according to embodiments of the present disclosure, wherein the ART segment includes a plurality of layers:

[0076] Figure 26 is a side perspective view of a non-adjustable heat shield according to another embodiment of the present disclosure;

[0077] Figure 27 is a flowchart illustrating a method for manufacturing an adjustable heat shield according to another embodiment of the present disclosure;

[0078] Figure 28 is a flowchart illustrating a method for adjusting an adjustable heat shield according to another embodiment of the present disclosure; and

[0079] Figure 29 is a flowchart illustrating a method for manufacturing a non-adjustable heat shield according to another embodiment of the present disclosure;

[0080] In the drawings, reference numbers can be reused to identify similar and / or identical elements. DETAILED DESCRIPTION

[0081] During PECVD processing, a platen of a substrate support (sometimes referred to as a susceptor or a pedestal) is heated via one or more internal heating elements. The temperature of the substrate support can be approximately 1000 °C. There is a large temperature difference between the substrate support and the processing chamber walls. For example, the chamber walls can be 75 °C or less. Thus, there is a large amount of heat (or energy) loss from the substrate support to the chamber walls and / or other components within the processing chamber that are less than the temperature of the substrate support.

[0082] For PECVD processing, there are many film properties that are temperature sensitive, and corresponding performance parameters of the substrate (wafer) that are continuously monitored and / or evaluated. In some applications, tight requirements are placed on the uniformity of performance parameters within a wafer and from wafer to wafer. For example, the temperature of a platen can vary depending on the temperature of the walls of the processing chamber, the amount of heating of the platen by one or more heating elements within the platen, and the processing of the substrate being performed within the processing chamber. The temperature profile across the platen is based on the material properties of the platen, the heat conducted and absorbed by the platen, and the heat lost to the environment, including the walls of the processing chamber.

[0083] Controlling the power to the heating elements within the platen of the substrate support provides a limited amount of control over the temperature profile of the platen. By controlling the heat loss from the platen to the surrounding components and the environment, the temperature modulation of the temperature profile can be better controlled. Temperature modulation involves the emission of heat from the platen and the reflection of the emitted heat back to the platen, causing temperature fluctuations across the platen.

[0084] Examples set forth herein include adjustable and non-adjustable heat shields disposed between the platen and the walls of the processing chamber. The heat shields can be "annular" and include a plurality of absorption-reflection-transmission (ART) regions, segments, and / or portions having different heat flow pattern variation characteristics that can be adjustable and / or pre-set to provide a selected platen temperature profile. The ART regions, segments, and portions vary the heat flow pattern between the platen and a remote reference surface, such as the surface of the walls of the plasma chamber.

[0085] As used herein, the terms "ART region," "ART segment," and "ART portion" refer to a region, segment, or portion of a heat shield having respective amounts of heat absorption, reflection, and transmission characteristics. The ART regions and ART portions of adjustable and non-adjustable heat shields can refer to segments, separate portions, non-separate portions, radially disposed portions, azimuthally disposed portions, layers, overlying layers, overlapping layers, etc. The adjustable aspects of the heat shields can be used to adjust the temperature of the platen, and thus, the refractive index of the platen to affect the temperature of the processed substrate. The heat shields provide a plurality of parameters that are pre-set and / or adjustable to control the heat loss to the environment of the processing chamber, including to the components within the processing chamber and / or the walls of the processing chamber. The ART segments of some adjustable heat shields provide a segmented modular design that can be customized for a variety of different temperature profiles and corresponding heat loss levels. The ART regions, segments, and portions are pre-set and / or adjustable to control azimuthal and radial temperature non-uniformity.

[0086] The disclosed examples help to improve azimuthal and radial temperature uniformity across the substrate platen, increase control over the degree of thermal correction to the temperature profile, provide hardware tuning to compensate for thermal inaccuracies of the hardware, provide process tuning to compensate for thermal inaccuracies of the process, reduce the amount of particles generated during processing by covering possible contaminants and thermally shielding metal components that can generate particles from heat, and improve the performance of the substrate support without increasing the cost of the substrate support. The disclosed examples also help to improve the thermal response of the platen's heating elements and thus improve throughput. By reducing thermal losses, the duty cycle of the heating elements can be reduced because less energy is needed to provide the same level of heating. Reducing thermal losses also allows for the use of lower cost hardware that is rated for lower levels of heating.

[0087] Figure 1 A substrate processing system 100 is shown that includes a processing chamber 101 having a heat shield 102. The heat shield 102 can be adjustable or non-adjustable and configured the same as or similarly to any of the heat shields disclosed herein. While a single heat shield is shown, more than one heat shield can be included, as shown in U.S. Patent No. 8, 1 1 1, 1 1 1, which is incorporated by reference herein in its entirety. While a capacitively coupled plasma (CCP) system is shown, the embodiments disclosed herein are applicable to other plasma processing systems. The embodiments are applicable to plasma enhanced chemical vapor deposition (PECVD) processing. Figure 21 Figure 1 A substrate processing system 100 is shown that includes a processing chamber 101 having a heat shield 102. The heat shield 102 can be adjustable or non-adjustable and configured the same as or similarly to any of the heat shields disclosed herein. While a single heat shield is shown, more than one heat shield can be included, as shown in U.S. Patent No. 8, 1 1 1, 1 1 1, which is incorporated by reference herein in its entirety. While a capacitively coupled plasma (CCP) system is shown, the embodiments disclosed herein are applicable to other plasma processing systems. The embodiments are applicable to plasma enhanced chemical vapor deposition (PECVD) processing.

[0088] The substrate processing system 100 includes a substrate support 104, such as an electrostatic chuck or vacuum chuck, disposed within the processing chamber 101 and including a platen 106. The substrate support 104 or other substrate supports disclosed herein can be referred to as a pedestal or susceptor. The processing chamber 101 has at least one distal reference surface (e.g., distal reference surface 103) opposite the heat shield 102. Other components, such as an upper electrode 108, can be disposed within the processing chamber 101. During operation, a substrate 109 is disposed on the platen 106 of the substrate support 104 and clamped to the platen 106 by electrostatic or vacuum clamping, and an RF plasma is generated within the processing chamber 101.

[0089] ​By way of example only, the upper electrode 108 can include a showerhead 110 that directs and distributes the gas. The showerhead 110 can include a stem 111 that includes one end that is connected to a top surface of the processing chamber 101. The showerhead 110 is generally cylindrical and extends radially outward from an opposite end of the stem 111 that is spaced apart from the top surface of the processing chamber 101. A substrate-facing surface of the showerhead 110 includes a plurality of holes through which process gas, or purge gas, flows. Alternatively, the upper electrode 108 can include a conductive plate with gas introduced in another manner. The platen 106 can serve as a lower electrode.

[0090] The platen 106 can include a temperature control element (TCE) that can receive power from a power source 112. An RF generation system 120 generates and outputs an RF voltage to the upper electrode 108. The RF generation system 120 can generate and output an RF voltage to the substrate support 104. One of the upper electrode 108 and the substrate support 104 can be DC grounded, AC grounded, or at a floating potential. By way of example only, the RF generation system 120 can include one or more RF generators 123 (e.g., a capacitively coupled plasma RF power generator and / or other RF power generators) that generate an RF voltage that is fed to the upper electrode 108 via one or more matching networks 127. The RF generators 123 can be high power RF generators to generate, for example, 6-10 kilowatts (kW) or more.

[0091] A gas delivery system 130 includes one or more gas sources 132-1, 132-2,... and 132-N (collectively, gas sources 132), where N is an integer greater than zero. The gas sources 132 supply one or more precursors and gas mixtures thereof. The gas sources 132 can also supply etching gases, carrier gases, and / or purge gases. Vaporized precursors can also be used. The gas sources 132 are connected to a manifold 140 by valves 134-1, 134-2,... and 134-N (collectively, valves 134), and mass flow controllers 136-1, 136-2,... and 136-N (collectively, mass flow controllers 136). The output of the manifold 140 feeds the processing chamber 101. By way of example only, the output of the manifold 140 feeds the showerhead 110.

[0092] The substrate processing system 100 also includes a heating system 141 that includes a temperature controller 142, where the temperature controller 142 can be connected to the TCE via the power supply 112. Although the temperature controller 142 is shown separate from the system controller 160, the temperature controller 142 can be implemented as part of the system controller 160. The platen 106 can include multiple temperature controlled zones (e.g., 4 zones, where each zone includes 4 temperature sensors).

[0093] The temperature controller 142 can control the operation of the TCE and thus its temperature to control the temperature of the platen 106 and substrates (e.g., substrate 109). The temperature controller 142 and / or the system controller 160 can control the current supplied to the TCE based on parameters detected from sensors 143 within the processing chamber 205. The temperature sensors 243 can include resistive temperature devices, thermocouples, digital temperature sensors, and / or other suitable temperature sensors. During a deposition process, the platen 106 can be heated to a predetermined temperature (e.g., 650 degrees Celsius (°C)).

[0094] Valves 156 and pumps 158 can be used to evacuate reactants from the processing chamber 101. The system controller 160 can control components of the substrate processing system 100, including controlling the RF power level supplied, pressure and flow of gases supplied, RF matching, etc. The system controller 160 controls the state of the valves 156 and pumps 158. A robot 170 can be used to transport substrates onto and remove substrates from the substrate support 104. For example, the robot 170 can transfer substrates between the substrate support 104 and a load lock 172. The robot 170 can be controlled by the system controller 160. The system controller 160 can control the operation of the load lock 172.

[0095] The power supply 112 can provide power (including high voltage) to electrodes in the substrate support 104 to electrostatically clamp the substrate 109 to the platen 106. The power supply 112 can be controlled by the system controller 160. Valves, pumps, power supplies, RF generators, etc. can be referred to as actuators. The TCE can be referred to as a temperature adjustment element.

[0096] Figure 2A substrate support 200 is shown, including a central shaft 202 and a platen 204. A heat shield 206 is adjustable and supported on the shaft 202. The heat shield 206 can be replaced with any other heat shield disclosed herein. The central shaft 202 can extend upward from a process chamber wall 208 and be hollow to allow power to be provided to one or more heating elements (one heating element 207 is shown) in the platen 204. A substrate 210 is disposed on the platen 204. The heat shield 206 is annular and has a radially inner opening 216 and a frame 218, and can include an ART segment 220 disposed on the frame 218. Examples of ART segments 220 are shown in Figures 3-5 , 11, and 15-19. Other ART segments and surfaces are shown in Figures 6-10 and 20-21.

[0097] The heat shield 206 reduces the temperature gradient between the platen 204 and the next object near the platen 204. For example, without the heat shield 206, the temperature gradient between the platen 204 and the process chamber wall 208 can be 575°C, with the platen 204 at 650°C and the process chamber wall at 75°C. With the heat shield 206 and in a steady state, the temperature gradient can be reduced to 10-150°C (or, for example, another example, 10-20°C), with the platen 204 at 650°C and the heat shield at 500-640°C. Thus, a first deviation between a cold region of the platen 204 and the heat shield, and a second deviation between a hot region of the platen 204 and the heat shield can be minimized, and a deviation between the first deviation and the second deviation can be minimized and / or made insignificant.

[0098] The ART segments 220 can be modular and replaceable. The ART segments 220 are disposed on the frame 218 and held on the frame 218 by gravity. The ART segments and other ART segments disclosed herein can have different shapes, sizes, angled surfaces, materials, heights, widths, lengths, profiles, patterns, etc. The ART segments and other ART segments disclosed herein can each have multiple layers. The layers can be formed of different materials and can or can not be overlaid on top of each other and / or partially overlap each other. Each ART segment 220 has a respective absorption level, reflection level, and transmission level. These characteristics and / or parameters can be set based on the temperature profile and / or the reflection index profile used for the platen and the given application.

[0099] The substrate support 200 can also include one or more thermal barriers (one thermal barrier 230 is shown). The thermal shield 206 and the thermal barrier 230 can be collectively referred to as a thermal shield assembly. The thermal barrier 230 can be attached to the shaft 202 and support the thermal shield 206. The thermal shield 206 can rest on the thermal barrier 230. The weight and thickness of the thermal shield 206, including the frame 218 and the ART segments 220, can be minimized and balanced so that the thermal shield 206 remains balanced on the thermal barrier 230 with (i) the distance between the thermal shield 206 and the chamber wall 208 remaining the same, and (ii) the distance between the thermal shield 206 and the platen 204 remaining the same. When balanced, the top surface 240 of the thermal shield 206 can be parallel to the bottom surface 242 of the platen 204. Similarly, the bottom surface 244 of the thermal shield 206 can be parallel to the top (or distal reference) surface 246 of the chamber wall 208. In one embodiment, the weight and thickness of the thermal shield 206 are minimized.

[0100] Although the thermal shield 206 is attached to the shaft at a location between the platen 204 and the distal reference surface 246, the thermal shield 206 can alternatively or additionally be positioned between the platen 204 and one or more other surfaces that also affect the radiative boundary conditions. The exchange of thermal energy between any two bodies via radiation depends on the temperatures, emissivities, absorptivities, reflectivities, and transmissivities of the two bodies, as well as the view factor between the two bodies. Any change in these parameters results in a change in the exchange of thermal energy. These parameters can be grouped and referred to as the radiative boundary conditions.

[0101] Increasing the infrared transmission of the thermal shield 206 under the hot regions of the platen 204 increases the heat loss of the platen 204. Improving the directional emissivity of the thermal shield 206 under the cold regions of the platen 204 decreases the heat loss, and thus the infrared radiation can be reflected back to the platen 204 if the thermal shield 206 is configured to perform as a focusing ring. The ART segments 220 can be configured to reflect the infrared radiation emitted by the platen 204. The arrows 250 illustrate the focused reflection of infrared radiation. The arrows 252 depict the infrared radiation from the platen 204. The arrows 254 illustrate the infrared transmission through the thermal shield 206.

[0102] The thermal barrier 230 prevents premature failure of the heat shield 206 due to high temperature gradients between the heat shield 206 and the chamber wall 208. If there are large temperature gradients, cracks can be created in the heat shield 206. The thermal barrier 230 reduces the temperature gradient between the heat shield and the next adjacent object. The thermal barrier 230 is the next adjacent object. Reducing the temperature gradient prevents cracks in the heat shield 206, thereby improving the reliability of the heat shield 206. The thermal barrier 230, and other thermal barriers disclosed herein, can be formed of aluminum oxide (AI2O3) and / or aluminum nitride (AIN) and / or any other suitable refractory material and / or suitable metal. In some embodiments, the thermal barrier 230, and other thermal barriers disclosed herein, are formed of an insulating material and act as a thermal insulator.

[0103] The ART segments 220 can be configured to adjust (or set) the temperature profile across the entire platen 204. Examples of the ART segments 220 are shown in FIGS. 11-12 and 16-20. Figures 3-5 Figure 3 A heat shield 300 is shown including a frame 302 having openings (or windows) 304 for ART segments and a protrusion 305 for engaging with a central shaft. Although the frame 302 is shown with a protrusion 305 for engaging with a central shaft, the frame 302 can have protrusions for engaging with one or more other hardware components. The protrusions can extend inwardly or outwardly and can be disposed on the interior of the frame 302 (as shown) or on other portions of the frame 302. As shown, the ART segments are wedge-shaped and include a transparent (or transmissive) segment 306, a solid, micro-transmissive segment 308, and a reflective (non-transparent) segment 310. The ART segments can have different widths to partially or completely cover one or more of the openings 304. One or more of the openings 304 can not include an ART segment.

[0104] The frame 302 can have any number of openings for ART segments. During substrate processing, one or more of the openings 304 can not include any ART segments, or can be partially or completely filled with ART segments. In the example shown, the frame 302 has three openings configured to receive ART segments, one of the openings 304 is completely filled with the segment 306, a second opening is completely filled with the segment 310, and a third opening is partially filled with the segment 308.

[0105] ​In a given area of heat shield 300, when no ART shield is provided between the platen and the chamber wall on the frame, the maximum amount of heat transfer from the platen to the chamber wall is provided. When one of segments 306 is provided between the platen and the chamber wall, the next reduced amount of heat transfer can be provided. When one of segments 308 is provided between the platen and the chamber wall, the maximum amount of heat absorption can be provided. When one of segments 310 is provided between the platen and the chamber wall, the maximum amount of heat energy reflection can be provided. Arrow 326 is shown to illustrate the amount of heat impact of the no ART segment, the transparent segment 306, the solid micro-transparent segment 308, and the reflective (opaque) segment 310 on the platen. For example, transparent segment 306 can be formed of sapphire and / or other suitable heat transparent material. Solid micro-transparent segment 308 can be formed of ceramic, zirconium and / or other suitable micro-transparent and heat absorbing material. Reflective (opaque) segment 310 can be formed of aluminum oxide (AI2O3), aluminum nitride (AIN) and / or other suitable reflective material.

[0106] Each of ART segments 306, 308, 310 can include a removal hole (one hole is labeled 320) for grasping and removing ART segments 306, 308, 310 with a finger. Frame 302 can have lift pin holes 322 through which lift pins can pass and be used to lift a substrate from a platen. Frame 302 can also include a perimeter ledge 330 in each opening 304 in which segments 306, 308, 310 are placed. While segments 306, 308, 310 are shown in a particular one of the openings 304, segments 306, 308, 310 can be moved to other ones of the openings 304. Each opening 304 can include different types of ART segments, including different types of segments 306, 308, 310.

[0107] Reflective segment 310 includes ridges 350 separated by channels 352, where the channels 352 have a recessed surface. The sides of ridges 350 can be perpendicular to channels 352, or can be angled to have a predetermined pitch to direct reflected heat at a predetermined angle and / or to focus heat to a particular area of the platen.

[0108] Figure 4 Another heat shield 400 is shown that includes a frame 402 having a plurality of openings 404 having a plurality of ledges (one is labeled 406) on which ridge-shaped reflective segments 408 are provided. As shown, ridge-shaped reflective segments 408 can be wedge-shaped. The available positions of ridge-shaped reflective segments 408 are identified by numbers 1-9. While nine positions are shown, the size of ridge-shaped reflective segments 408 and the size of the openings can be different to accommodate any number of ridge-shaped reflective segments.

[0109] Figure 5 A processing chamber 500 including a heat shield 502 is shown. The heat shield 502 includes a frame 503 having a solid (or non-porous) portion 504 with no ART segments, and another (or porous) portion 506 with heat absorbing wedge-shaped segments 508. The heat shield 502 includes two openings 510, 512 within the portion 506. The opening 510 includes a single ART segment. The opening 512 includes four ART segments. Since the ART segments 508 are partially transparent, a ring 514 is visible from the top side of the heat shield 502. In one embodiment, the ART segments 508 are formed of sapphire. In another embodiment, the ART segments 508 include multiple layers, with a silicon (Si) layer disposed between two sapphire layers. The layers are parallel to each other and extend radially and azimuthally. Sapphire material can cover the edges of the silicon layer to provide edge protection. The sapphire layers protect the silicon layer from exposure to the environment within the processing chamber 500, and thus prevent degradation of the silicon layer. By including multiple layers, with one or more layers formed of silicon, the ART segments are more transparent to infrared radiation. An example of a multi-layer ART segment is shown in Figure 25 .

[0110] The heat shield 502 includes three tabs 520, which project radially inward and slide along a groove 522 of a chuck 524. The chuck 524 is on a shaft 526. When installing, the tabs 520 of the heat shield 502 are aligned with the groove 522. Then, the heat shield 502 is slid onto the chuck 524. The tabs 520 prevent the heat shield 502 from rotating.

[0111] Figure 6 A processing chamber 600 including a heat shield 602 is shown. The heat shield 602 includes a solid (or non-porous) portion 604 with no ART segments, and another (or porous) portion 606 with circular ART segments. Pairs of different types of ART segments are shown, some of which are labeled 608, 610. The ART segments can be similar to the wedge-shaped segments disclosed herein, and are formed of different ART materials selected based on the absorption, reflection, and transmission properties selected for a given application. While the ART segments are shown as circular, of equal size, and disposed in radially extending rows, the ART segments can have different shapes and sizes, and be disposed in different configurations (or patterns). The ART segments are disposed in respective openings (or windows) 612, and can be seated on a shelf in a similar manner to the wedge-shaped segments.

[0112] The heat shield 602 includes three tabs 620 that project radially inward and slide along grooves 622 of a chuck 624. The chuck 624 is on a shaft 626. In installing, the tabs 620 of the heat shield 602 are aligned with the grooves 622. The heat shield 602 is then slid onto the chuck 624. The tabs 620 prevent the heat shield 602 from rotating.

[0113] Figure 7 A processing chamber 700 is shown that includes a heat shield 702 having a reflector portion 704 and another portion 706 that includes a circular ART segment. The reflector portion 704 can be configured similarly to the reflective ART segments disclosed herein and can include channels 703 and ridges 705. The channels 703 and / or the reflector portion 704 can be formed of a reflective material, such as alumina or other reflective material. The channels 703 can face a bottom side of a substrate platen.

[0114] A pair of different types of ART segments are shown, some of which are labeled 708, 710. These ART segments can be similar to the ART segments of Figure 6 . These ART segments are disposed in respective openings (or windows) 712 and can be on a shelf in a similar manner to the wedge-shaped segments disclosed herein.

[0115] The heat shield 702 includes three tabs 720 that project radially inward and slide along grooves 722 of a chuck 724. The chuck 724 is on a shaft 726. In installing, the tabs 720 of the heat shield 702 are aligned with the grooves 722. The heat shield 702 is then slid onto the chuck 724. The tabs 720 prevent the heat shield 702 from rotating.

[0116] In one embodiment, the heat shield 702 includes transmission channels and ridges that face downward toward a processing chamber wall, instead of reflective channels and ridges that face upward toward a bottom surface of a substrate platen. In another embodiment, the heat shield 702 includes both reflective channels and ridges and transmission channels and ridges. An example of transmission channels and ridges is shown in Figure 9 , with the transmission channels and ridges shown upside down.

[0117] Figures 8-10A heat shield 800 is shown that includes a body (or frame) 801 having a reflector portion (or first half) 802 and an emitter portion (or second half) 804. The reflector portion 802 includes, on a first side, channels 806 with reflective surfaces and ridges 808, and on an opposite side, a solid flat surface 809. The emitter portion 804 includes, on a first side, channels 810 with emissive recessed surfaces and ridges 812, and on an opposite side, a solid flat surface 814. There can be an overlap region 816 between the reflector portion 802 and the emitter portion 804. The channels 806, 810 have sidewalls that form the ridges 808, 812. An example sidewall 820 is shown in Figure 10 The heat shield 800 includes three tabs 822 that project radially inward and slide along a groove of a chuck (e.g., one of the chucks disclosed herein). The heat shield 800 also includes an innermost radial edge 830 and an outermost radial edge 832.

[0118] Figure 11 Another heat shield 1100 is shown that includes a frame 1102 having openings 1104 for wedge-shaped ART segments 1106. The ART segments 1106 are of equal size. The heat shield 1100 is disposed on heat stops 1110, 1112. The heat shield 1100 is disposed on and in contact with the heat stop 1110. The heat stop 1110 is disposed on and in contact with the heat stop 1112. During installation, the heat stop 1112 can be attached to a central shaft (not shown), then the heat stop 1110 is slid onto the central shaft and rotated to lock with the heat stop 1112. Then, the heat shield 1100 is slid onto the heat stop 1110 and rotated to lock with the heat stop 1110. Examples of heat stops are further shown and described in Figures 14-15 The heat stops function in a manner similar to the other heat stops disclosed herein.

[0119] The heat stop 1112 can be hexagonal and include 6 contact points (shown in Figure 15 FIG. 6) for the heat stop 1110, or can be any other suitable shape. The heat stop 1110 can be dodecagonal and include twelve outer sides 1114, or can be any other suitable shape. Six sides of the heat stop 1110 can be in contact with six radially inner sides 1116 of the heat stop 1112.

[0120] Figure 12Another heat shield 1200 is shown including a frame 1102 having openings 1104 for wedge-shaped ART segments 1206. The ART segments 1206 have different sizes. The ART segments 1206 can have different angular widths to provide different numbers of segments in the various openings 1104. This allows adjustment of the level and / or temperature control granularity of the conditioning. In the example shown, two different sizes of ART segments are shown. The larger ART segments can have holes 1208 or pockets to facilitate grasping, removing, and placing of the ART segments. The heat shield 1200 is shown positioned on a heat barrier 1110.

[0121] Figure 13 A frame 1102 of the heat shield 1100, 1200 and a heat barrier 1110, 1112 are shown. Figures 11-12

[0122] Reference is now also made to Figures 14-15 . Figure 14 A heat barrier 1110 of the heat shield 1100, 1200 is shown. Figures 11-12 Figure 15 A heat barrier 1112 of the heat shield 1100, 1200 is shown. The heat barrier 1110 provides a connection of the barrier to the heat shield. The heat barrier 1110 includes six radially outwardly projecting tabs 1400 on which the heat barrier 1112 is disposed. The tabs 1400 are adjacent to the sides 1114. The heat barrier 1110 includes six attachment points 1402 for attaching the heat barrier 1110 to the shaft or a fastening member of the shaft. Figures 11-12

[0123] The heat barrier 1112 includes six contact points (or outwardly projecting pads) 1500 on which one of the heat shields 1100, 1200 is disposed. The heat barrier 1112 includes a base 1502 and a hexagonal ring 1504 extending upwardly from the base 1502. The base 1502 and the ring 1504 can form a single piece. The ring 1504 slides into a central opening of the heat shield and prevents the heat shield from rotating. The sides of the ring 1504 contact the radially innermost edges of the heat shield.

[0124] The hexagonal configuration of the heat barriers 1110, 1112 and the corresponding heat shield frames provides a robust design for better thermal isolation. Furthermore, by having the ART segments of the corresponding heat shields have a dispersed specific location, the reproducibility of the performance is improved.​​​

[0125] Figures 16-20 Different wedge-shaped ART segments are shown; these wedge-shaped ART segments can be used or sized for use in [specific applications]. Figures 2-5 And in frames 218, 302, 402, 503, and 1102 of 11-13. The wedge-shaped ART segments have different geometries, which affect azimuth and radial temperature nonuniformity in different ways. The geometry of the wedge-shaped ART segments, as well as the corresponding hole and notch patterns, can be modified and adjusted to minimize and / or change the effects of the wedge-shaped ART segments on azimuth and radial nonuniformity. Furthermore, although the wedge-shaped ART segments are displayed with specific shapes and properties (e.g., holes, notches, pockets, peaks, ridges, depressions, etc.), these shapes and properties and / or the number of properties can be changed. Figure 16 A plate-shaped wedge-shaped section 1600 is shown, and the wedge-shaped section 1600 has a window 1602 that is also wedge-shaped.

[0126] The ART segments disclosed herein can be keyed to facilitate holding these ART segments in a configured position on the frame of the hotspot. For example, segment 1600 includes a keying side 1604 with a notch 1605. Although one side of segment 1600 is shown as keyed, more than one side can be keyed. The frame of the hotspot may have radially inwardly extending keying protrusions coupled to the keying side of the ART segment. An exemplary frame 2200 is shown in Figure 22 The frame 2200 includes multiple keying protrusions 2202 (one for each ART segment). Although the keying protrusions are shown as the outermost radial portion of the window portion 2204 along the frame 2200, the keying protrusions may be located on other sides of the window portion 2204.

[0127] Figure 17 A wedge-shaped segment 1700 with an upper surface 1702 is shown, wherein the upper surface 1702 has a different height and has an angled side portion 1704 and a centrally located peak portion 1706. As an example, the position of the peak portion 1706 can be moved radially inward or outward to adjust for deviations in the wedge-shaped segment 1700 due to radial temperature non-uniformity. As another example, the height of the peak portion 1706 relative to the bottom of the wedge-shaped segment 1700 can also be adjusted. Figure 21 The image shows an example of a heatsink comprising several wedge-shaped segments of 1700. Figure 18 A wedge-shaped section 1800 with a double radially inwardly notched end 1802 is shown. The end 1802 includes two notches 1804. Figure 19 A wedge-shaped segment 1900 with a body 1902 is shown, wherein the body 1902 may be hollow to reduce weight. In the example shown, the height of the body 1902 is consistent across the body 1902 laterally.Figure 20 Examples of ART segments having different heights are shown in Figures 16-18 Examples of at least some of the examples of Figure 20 may be implemented to affect radial temperature non-uniformity in addition to affecting azimuthal temperature non-uniformity.

[0128] Figure 20 Examples shown: solid wedge-shaped segment 2000; thick wedge-shaped segment 2002 with a top surface 2003 that, when implemented, can be positioned near a platen; wedge-shaped segment 2004 with an angled top surface 2005 to direct heat at certain angles relative to a platen; wedge-shaped segment 2006 with an angled top surface 2007 and an extension 2009 that extends beyond and overhangs the radially outermost edge of the corresponding heat shield; wedge-shaped segment 2008 with a top surface 2011 that is radially convex from a radially innermost edge 2013 to a radially outermost edge 2015; wedge-shaped segment 2010 with a top surface 2017 that is radially concave from a radially innermost edge 2019 to a radially outermost edge 2021; wedge-shaped segment 2012 with a concave top surface 2023 in the azimuthal direction to radially minimize interaction with adjacent segments of the same thickness; wedge-shaped segment 2014 with a concave, sunken, and angled top surface 2025 in the azimuthal direction so that the thickness of the segment is greatest at the radially innermost edge. Segments 2002, 2004, 2006, 2008, 2010, 2012, and 2014 can be hollow to reduce weight.

[0129] The ART segments disclosed herein can be perforated so that the ART segments include one or more holes. The holes can be of different sizes and shapes. In Figures 16-17 Examples of ART segments with a single hole are shown in

[0130] Figure 21 A heat shield 2100 is shown that includes a frame 2102 with windows 2104. A plurality of ART segments 2106 are disposed in the windows 2104. The ART segments are similar to the ART segments 1700 of Figure 17 and have different sizes. Some of the ART segments 2106 include openings 2108 and others do not.

[0131] Figure 23The processing chamber 2300 is shown with the segmented heat shield 2301 and cantilevered ART segments 2302 having an offset, and the retaining clamp 2304, but not the frame. The ART segments 2302 are wedge shaped, and have a radially innermost end 2305 to insert into a groove 2306 of the retaining clamp 2304. The retaining clamp 2304 includes a body 2307 having a cylindrical sidewall 2309 with the groove 2306. The radially innermost end 2305 inserts into the groove 2306, and the ART segment 2302 is tilted downward to face the retaining clamp 2304 so that the radially outermost end 2308 of the ART segment 2302 is higher than the radially innermost end 2305. Once inserted into the groove 2306, the radially outermost end 2308 of the ART segment is pivoted downward so that the top surface of the ART segment 2302 extends horizontally. In one embodiment, the radially outermost end 2308 is pivoted downward so that the ART segment 2302 is tilted downward with the radially outermost end 2308 being 0-0.2° lower than the radially innermost end 2305. The retaining clamp 2304 has a lower portion 2320 with an attachment point 2322 to attach the retaining clamp 2304 to a central shaft.

[0132] The heat shield 2301 provides a modular design to allow for easy and quick replacement of the ART segments 2302, and insertion and removal of the heat shield 2301 without disassembling the substrate support. When a passage is provided to the interior of the chamber 2300, each ART segment 2302 can be easily extracted or inserted into one of the grooves 2306. The ART segments 2302 can be disposed 360° around the clamp 2304, and can have an offset vertically from each other as shown. This enables easy insertion and removal of the ART segments 2302. In addition, the offset also provides another setting to adjust the amount of absorption, reflection, and transmission based on the distance between the substrate platen and the top surface of the ART segments 2302. Although shown as being horizontal in azimuth, the ART segments can be angled in azimuth so that one radially extending edge of the ART segment is lower than the other opposite radially extending edge.

[0133] In one embodiment, the ART segments 2302 are formed of ceramic, and the clamp 2304 is formed of aluminum. In another embodiment, the ART segments 2302 and the clamp 2304 are formed of aluminum. The ART segments 2302 can be formed of a metal-based material other than or in addition to aluminum.

[0134] Figure 24A substrate support 2400 is shown, comprising a platform 2402 and stacked heat shields 2404 and 2406 arranged in a nested configuration. The substrate support 2400 includes a central axis 2408 on which the platform 2402 is disposed. The platform 2402 supports a substrate 2409. Each heat shield 2404 and 2406 has a respective heat barrier 2410 and 2412, which are attached to the central axis 2408 and support the heat shield 2404 and 2406. The heat shields 2404 and 2406 and the heat barriers 2410 and 2412 can be collectively referred to as a heat shield assembly. Although two heat shields and two heat barriers are shown, any number of each may be included. Each additional heat shield provides another thermal separation layer between the platform 2402 and the processing chamber wall 2420, wherein the processing chamber wall 2420 has a distal reference surface 2421. Each heat shield 2404, 2406 may be configured similarly to any heat shield disclosed herein. Furthermore, a gap may exist between the heat shield 2406 and the heat barrier 2410 (as shown), or the heat barrier 2410 may be disposed on the heat shield 2406. Heat shields 2404, 2406 may include ART segments 2422, 2424, 2426, 2428, such as any ART segment disclosed herein.

[0135] As an example, the tabletop can be at 650°C, the temperature of the heat shield 2404 can be between 400-500°C, the temperature of the heat shield 2406 can be between 250-350°C, and the temperature of the processing chamber wall 2420 can be at 70°C. This nested configuration can also be used in applications where the tabletop 2402 temperature exceeds 650°C.

[0136] Figure 25 A multi-layer ART segment 2500 is shown, comprising a first layer 2502, a second layer 2504, and a third layer 2506. The ART segment 2500 may include a channel hole 2508 and a keying side 2510 with a notch 2512. Layers 2502 and 2506 may be formed of one or more materials and may protect the second layer 2504, which may be formed of one or more different materials. One of layers 2502 and 2506 may cover the periphery of the second layer, as shown at edges 2514 and 2516. As an example, layers 2502 and 2506 may include sapphire, while the intermediate layer 2504 may include ceramic, refractory material, or at least one of one or more metals.

[0137] While several types of adjustable heatsinks have been described above, non-adjustable heatsinks can also be modified to have the matching ART characteristics of any adjustable heatsink in a specific configuration. For example, one could... Figures 3-11The tunable heat shields of 13 and 21-23 are formed as monolithic structures having the corresponding ART regions and / or portions. As an example, the specific configuration of any of the tunable heat shields of 13 and 21-23 can be selected, and then a single monolithic structure is machined to have the same size, shape, and dimensions as the selected tunable heat shield. Figures 3-11 Figure 26 Another example monolithic heat shield is shown in FIG. 22.

[0138] Figure 26 A circular non-tunable heat shield 2600 is shown. The heat shield 2600 has a fixed structure including a plate body 2601 having a centrally located hexagonal opening 2602, a circular hole 2604, and four arcuate side holes 2608. Curved ridges 2606 extend away from the plate body 2601. The opening is configured to couple a heat barrier (e.g., the heat barrier 1110 of FIG. 21). Figure 13 The hole 2604 and the ridges 2606 are located radially outward of and surround the opening 2602. The holes 2608 are located radially outward of and surround the opening 2602, the hole 2604, and the curved ridges 2606. In the example shown, there are three holes 2604, three ridges 2606, and ten holes 2608, but each can include any number. The ridges 2606 include (i) peaks 2610 extending between longitudinal ends 2612, and (ii) radially inclined and arcuate sides 2614. The holes 2608 are equally spaced from each other.

[0139] Figure 27 A repetitive execution method 2700 for manufacturing a tunable or non-tunable heat shield (e.g., any of the heat shields disclosed herein) is shown. The method 2700 includes initially designing a heat shield at 2702 to adjust heat flow pattern variation characteristics by setting and / or improving one or more critical dimensions of a substrate to meet first predetermined criteria for the one or more critical dimensions. This includes determining and / or selecting: the size, shape, dimensions, and / or composition of the frame and / or body; the number, size, shape, dimensions, and / or composition of the ART regions, segments, and / or portions of the frame and / or body; the number of ART regions, segments, and / or portions to be included; the size, shape, dimensions, location, and / or composition of each ART region, segment, and / or portion; the number, location, size, shape, and dimensions of holes and / or other features of the heat shield, etc. This also includes machining the heat shield to be tested. Operation 2702 can have a substantial recurring cost and a long lead time. At 2703, the heat shield is machined according to the newly set parameters.

[0140] ​At 2704, the substrate is fed to a station to perform a deposition or etching operation. At 2706, when a heat shield is used, the deposition or etching operation is performed, for example, on a film layer of the substrate to change one or more critical dimensions of the substrate.

[0141] At 2708, the substrate is transferred from the deposition / etching station to a measurement station. At 2710, metrology is performed to measure the one or more critical dimensions, and the measured data is analyzed to determine whether to make modifications to one or more heat flow pattern variation characteristics and / or ART aspects of the heat shield based on the first predetermined criteria. If the design of the heat shield requires modification, operation 2702 is performed to redesign and fabricate another heat shield. Modifications to heat shield parameters can be made based on the analysis and used at operation 2702.

[0142] Although method 2700 is described with respect to forming an adjustable heat shield, similar methods can be used to form a non-adjustable heat shield.

[0143] Figure 28 A method 2800 for adjusting the repeatability of an adjustable heat shield is shown. Figure 28 The method of 2800 can be performed after the method of 2700 is completed. Figure 27 The method 2800 includes fine tuning the heat shield at 2802 to set and / or improve one or more critical dimensions of a substrate to meet a second predetermined criteria. The second predetermined criteria can have more exacting requirements than the first predetermined criteria. This can include, for example, determining the number of ART segments to include, the type of ART segments, and the location of the ART segments on the frame or body of the heat shield. This can include determining locations on the frame and / or body where no ART segments are to be included. Operation 2802 can have no recurring cost and have a short lead time, for example, much shorter than the lead time of operation 2702 of 2700. Figure 27

[0144] At 2804, the substrate is fed to a station to perform a deposition or etching operation. At 2806, when a heat shield is used, the deposition or etching operation is performed, for example, on a film layer of the substrate to change one or more critical dimensions of the substrate.

[0145] At 2808, the substrate is transferred from the deposition / etching station to a measurement station. At 2810, metrology is performed to measure the one or more critical dimensions, and the measured data is analyzed to determine whether to make modifications to one or more ART aspects of the heat shield. If the design of the heat shield requires modification, operation 2802 is performed to further fine tune the heat shield. Modifications to heat shield parameters can be made based on the analysis and used at operation 2802.

[0146] Figure 29 ​A method 2900 of repeatedly performing manufacturing of a non-tunable heat shield is shown. The method can be performed alone or after performing the method of Figure 28 The method of Figure 28 may be performed to fine tune a tunable heat shield to save time and cost, and then the method of Figure 29 may be performed to machine a monolithic heat shield based on and / or matching the final tunable heat shield provided by performing the method of Figure 28 The method of

[0147] The method 2900 includes machining a monolithic (non-tunable) heat shield at 2902. This can be based on previous test results. The operation 2902 can be performed after performing one or more of the methods of Figure 27 and 28 The operation 2902 can not have any recurring cost, and its lead time can be, for example, shorter than the lead time of the operation 2702 of Figure 27 and longer than the lead time of the operation 2802 of Figure 28

[0148] At 2904, a substrate is fed to a station to perform a deposition or etching operation. At 2906, when a heat shield is used, the deposition or etching operation is performed, for example, on a film layer of the substrate to change one or more critical dimensions of the substrate.

[0149] At 2908, the substrate is transferred from the deposition / etching station to a measurement station. At 2910, metrology is performed to measure the one or more critical dimensions. At 2912, the measured data is analyzed to determine whether to modify one or more ART aspects of the heat shield, and thus redesign and / or modify the heat shield. This can be based on a third predetermined criteria. The third predetermined criteria can have more stringent requirements than the first predetermined criteria. The third predetermined criteria can match or have similar requirements as the second predetermined criteria. If the design of the heat shield needs modification, the operation 2902 is performed. Modifications to heat shield parameters can be made based on the analysis and used at the operation 2902.

[0150] The disclosed heat shields have parameters that are predetermined and set to adjust the heat loss of a high temperature platen. The disclosed heat shields can be used as a tool to improve the design of a processing chamber and / or as a feature in a tool to improve tool performance.

[0151] The ART sections, regions, and portions disclosed herein can not be separate portions of a heat shield. Multiple tuning techniques can be superimposed on each other to achieve continuous (spatial) tailoring of performance.

[0152] ​The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the appended claims. It should be understood that one or more steps within a method can be executed in various orders (or concurrently) without altering the principles of the concept or its intended outcome. Also, although each of the embodiments describes at least one feature, any single implementation can include one or more of the features described. Finally, many embodiments are described in terms of examples while the true scope of the disclosure is set forth in the appended claims. Nothing disclosed herein is intended to be dedicated to the public regardless of whether these claims are invoked, and the phrase "of the present disclosure" should only be used to introduce a broad summary of certain embodiments. Instead, the phrase, unless otherwise specified, should be reinterpreted in view of the description as a reference to at least one of the claimed embodiments.

[0153] Various terminologies are used to describe spatial and functional relationships among elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "on," "under," and "disposed." When describing a relationship between a first and a second element in the above disclosure, this relationship can be a direct relationship in which no other intermediate element exists between the first and the second element, but it can also be an indirect relationship in which one or more intermediate elements exist (spatially or functionally) between the first and the second element. As used herein, the phrase "at least one of A, B, and C" should be interpreted as meaning logical (OR) using non-exclusive logical OR (A or B or C), and should not be interpreted as meaning "at least one of A, at least one of B, and at least one of C."

[0154] In some implementations, a controller is part of a system, which can be part of the above-described examples. Such systems can include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems etc.). These systems can be integrated with electronics for controlling the operations of the systems before, during, and after processing of semiconductor wafers or substrates. The electronics can be referred to as the “controller,” which can control various components or subcomponents of the one or more systems. Depending on the process requirements and / or system types, the controller can be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., of heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfer into and out of the tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0155] Generally, a controller can be defined as electronics having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits can include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions can be instructions or

[0156] In some implementations, a controller can be part of, or coupled to, a computer that is integrated with, coupled to, otherwise networked to, or a combination thereof, the system. For example, the controller can be in "the cloud" or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer can enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, set processing steps to follow a current processing, or to start a new processing. In some examples, a remote computer (e.g., a server) can provide processing recipes to a system over a network, which can include a local network or the Internet. The remote computer can include a user interface that enables entry or programming of parameters and / or settings, which are then transmitted over the network to the system. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller can be distributed, such as by including one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber in communication with one or more integrated circuits located remote from the chamber, such as in a

[0157] An example system can include, but is not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor

[0158] As described above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

1. A heat shield for a platen of a substrate support, the heat shield comprising: a frame; a plurality of absorption-reflectance-transmission segments in contact with the frame and configured to affect at least a portion of a heat flow pattern between a distal reference surface and the platen, wherein the plurality of absorption-reflectance-transmission segments include adjustable aspects to adjust the at least a portion of the heat flow pattern; and wherein: the frame includes: a central opening configured to receive a shaft of the substrate support, and a plurality of window portions configured to be at least partially covered by the plurality of absorption-reflectance-transmission segments in a designated location; and the plurality of absorption-reflectance-transmission segments are configured to be disposed in or located above at least one of the plurality of window portions and held by the frame.

2. The heat shield of claim 1, wherein the plurality of absorption-reflectance-transmission segments are configured to adjust at least a portion of the heat flow pattern between the distal reference surface and the platen.

3. The heat shield of claim 1, wherein the frame has a modular structure including the plurality of absorption-reflectance-transmission segments.

4. The heat shield of claim 1, wherein one or more of the plurality of absorption-reflectance-transmission segments include one or more apertures.

5. The heat shield of claim 1, wherein one or more of the plurality of absorption-reflectance-transmission segments include at least one of (i) one or more ridges, or (ii) one or more grooves.

6. The heat shield of claim 1, wherein one or more of the plurality of absorption-reflectance-transmission segments include at least one of (i) a plurality of different thicknesses, or (ii) a plurality of layers having different materials.

7. The heat shield of claim 1, wherein one or more of the plurality of absorption-reflectance-transmission segments are implemented as different at least one of a blanket layer or a radially adjacent layer.

8. The heat shield of claim 1, wherein the frame is configured to be attached to a shaft at a location between the platen and the distal reference surface, the distal reference surface being a surface of a process chamber wall or other surface affecting a radiation boundary condition.

9. The heat shield of claim 1, wherein one or more of the plurality of absorption-reflectance-transmission segments are adjustable to control azimuthal and radial temperature non-uniformities of at least one of the platen or a substrate.

10. The heat shield of claim 1, wherein the plurality of absorption-reflectance-transmission segments are disposed at different azimuthal or radial locations on the frame.

11. The heat shield of claim 1, wherein one or more of the plurality of absorption-reflectance-transmission segments have at least one shape, size, material, profile, or pattern that is different from another one or more of the plurality of absorption-reflectance-transmission segments.

12. The heat shield of claim 1, wherein the plurality of absorption- reflection-transmission segments are at least one of adjustable, movable, interchangeable, or replaceable to adjust the heat flow pattern.

13. The heat shield of claim 1, wherein the frame comprises a plurality of protrusions that interface with hardware components.

14. The heat shield of claim 1, wherein the plurality of window portions comprise respective edges, wherein the edges are configured to contact or interface with the plurality of absorption-reflection-transmission segments in the designated locations.

15. The heat shield of claim 1, wherein: the plurality of window portions comprise respective ledge portions, wherein the ledge portions are configured to hold the plurality of absorption- reflection-transmission segments in the designated locations; and the plurality of absorption-reflection-transmission segments are configured to be disposed in the plurality of window portions and on the ledge portions.

16. The heat shield of claim 1, wherein one or more of the plurality of absorption-reflection-transmission segments are reflective segments and reflect thermal energy received from the platen back at the platen.

17. The heat shield of claim 1, wherein one or more of the plurality of absorption-reflection-transmission segments are absorption segments and absorb thermal energy emitted by the platen.

18. The heat shield of claim 1, wherein one or more of the plurality of absorption-reflection-transmission segments are transmission segments and enable a portion of thermal energy emitted from the platen to pass through the one or more of the plurality of absorption-reflection-transmission segments to the distal reference surface.

19. The heat shield of claim 1, wherein one or more of the plurality of absorption-reflection-transmission segments are shaped to alter an effect of the one or more of the plurality of absorption-reflection-transmission segments on azimuthal temperature non-uniformity across the platen.

20. The heat shield of claim 1, wherein one or more of the plurality of absorption-reflection-transmission segments are shaped to alter an effect of the one or more of the plurality of absorption-reflection-transmission segments on radial temperature non-uniformity across the platen.

21. The heat shield of claim 1, wherein the frame is annular or polygonal.

22. The heat shield of claim 1, wherein each of the plurality of absorption- reflection-transmission segments is modular and can be disposed in a plurality of locations within the plurality of window portions.

23. The heat shield of claim 1, wherein at least two of the plurality of absorption-reflection-transmission segments are different in size.

24. The heat shield of claim 1, wherein the plurality of absorption- reflection-transmission segments are wedge-shaped.

25. The heat shield of claim 1, wherein the plurality of absorption- reflection-transmission segments are circular.

26. The heat shield of claim 1, wherein: the frame comprises a first portion and a second portion; the first portion comprises the plurality of window portions; the second portion comprises a plurality of channels and a plurality of ridges; and the plurality of absorption-reflection-transmission segments are configured to be disposed in the plurality of channels and on the plurality of ridges. The plurality of channels reflect thermal energy emitted by the platen back to the platen.

27. The heat shield of claim 1, wherein at least one of the plurality of absorption- reflection-transmission segments is at least partially transparent.

28. The heat shield of claim 1, wherein at least one of the plurality of absorption- reflection-transmission segments comprises a plurality of layers.

29. The heat shield of claim 28, wherein: the plurality of layers comprises a pair of layers and an intermediate layer; each of the pair of layers comprises sapphire; the intermediate layer is disposed between the pair of layers; and the intermediate layer comprises at least one of a ceramic, a refractory material, or a metal.

30. The heat shield of claim 1, wherein: the plurality of absorption-reflection-transmission segments comprises a plurality of keyed sides; and the frame comprises a plurality of keyed protrusions for engaging the keyed sides of the plurality of absorption-reflection-transmission segments.

31. The heat shield of claim 1, wherein: the central opening of the frame is configured to receive at least a first portion of a thermal barrier; and the frame is configured to be disposed on a second portion of the thermal barrier.

32. The heat shield of claim 1, wherein each of the plurality of window portions has a predetermined number of designated positions for one or more of the plurality of absorption- reflection-transmission segments.

33. A heat shield for a platen of a substrate support, the heat shield comprising: a frame; a plurality of absorption-reflection-transmission segments in contact with the frame and configured to affect at least a portion of a heat flow pattern between a distal reference surface and the platen, wherein the plurality of absorption-reflection-transmission segments comprises an adjustable aspect to adjust the at least a portion of the heat flow pattern; and wherein the frame comprises: a central opening for a central axis, wherein the central opening is configured to receive at least a portion of a first thermal barrier, and a plurality of window portions configured to hold the plurality of absorption- reflection-transmission segments in designated positions; the plurality of absorption-reflection-transmission segments are configured to be at least one of disposed in or positioned over the plurality of window portions; and the plurality of absorption-reflection-transmission segments and the frame thermally isolate a portion of a process chamber wall from the platen.

34. The heat shield of claim 33, wherein one or more of the plurality of absorption- reflection-transmission segments are shaped to change an effect of the plurality of absorption- reflection-transmission segments on azimuthal temperature non-uniformity across the platen.

35. The heat shield of claim 33, wherein one or more of the plurality of absorption- reflection-transmission segments are shaped to change an effect of the plurality of absorption- reflection-transmission segments on radial temperature non-uniformity across the platen.

36. The heat shield of claim 33, wherein: the plurality of absorption-reflection-transmission segments comprises a first absorption- reflection-transmission segment and a second absorption-reflection-transmission segment; and the first absorption-reflection-transmission segment is configured to be disposed in a first window portion of the plurality of window portions; and the second absorption-reflection-transmission segment is configured to be disposed in a second window portion of the plurality of window portions. The second absorption- reflection- transmission section is different in size than the first absorption- reflection- transmission section.

37. The heat shield of claim 33, wherein the first heat barrier is hexagonal.

38. A heat shield for a platen of a substrate support, the heat shield comprising: a frame; a plurality of absorption- reflection- transmission regions in contact with the frame and configured to affect at least a portion of a heat flow pattern between a distal reference surface and the platen, wherein the plurality of absorption- reflection- transmission regions include adjustable aspects to adjust the at least a portion of the heat flow pattern; and a retaining clamp including a sidewall having a plurality of slots, wherein: the frame is configured to connect to a central shaft of a substrate processing chamber; each of the plurality of slots is configured to receive a respective portion of one of a plurality of absorption- reflection- transmission sections; the plurality of absorption- reflection- transmission regions are implemented as the plurality of absorption- reflection- transmission sections; and the plurality of absorption- reflection- transmission sections are cantilevered such that the plurality of absorption- reflection- transmission sections are supported by a first portion of the sidewall below the plurality of absorption- reflection- transmission sections and a second portion of the sidewall above the plurality of absorption- reflection- transmission sections.

39. The heat shield of claim 38, wherein the plurality of slots and the plurality of absorption- reflection- transmission sections are configured such that each of the plurality of absorption- reflection- transmission sections can be retained in any of the plurality of slots.

40. The heat shield of claim 38, wherein the plurality of absorption- reflection- transmission sections are wedge-shaped.

41. The heat shield of claim 38, wherein the plurality of absorption- reflection- transmission sections include through-holes for mounting and removing the plurality of absorption- reflection- transmission sections to and from the retaining clamp.

42. The heat shield of claim 38, wherein the plurality of absorption- reflection- transmission sections are disposed about the retaining clamp so as to affect the heat flow pattern in 360° about the central shaft.

43. The heat shield of claim 38, wherein each of the plurality of absorption- reflection- transmission sections has a vertical offset from an adjacent pair of the plurality of absorption- reflection- transmission sections.

44. The heat shield of claim 38, wherein: the plurality of absorption- reflection- transmission sections are alternately located in vertical positions about the retaining clamp such that every other one of the plurality of absorption- reflection- transmission sections is located in a first vertical position and other absorption- reflection- transmission sections of the plurality of absorption- reflection- transmission sections are located in a second vertical position; and the second vertical position is higher than the first vertical position.

45. A heat shield assembly comprising: the heat shield of claim 1; and a first heat barrier.

46. The heat shield assembly of claim 45, further comprising a second thermal barrier, wherein: the heat shield is configured to be disposed on and engaged with the first thermal barrier; and the first thermal barrier is configured to be disposed on and engaged with the second thermal barrier.

47. A substrate support comprising: a heat shield according to claim 45; the first thermal barrier; a central shaft; and the platen, wherein the first thermal barrier is connected to the central shaft, and the heat shield is a first heat shield disposed on the first thermal barrier.

48. The substrate support of claim 47, further comprising: a second thermal barrier connected to the central shaft; and a second heat shield disposed on the second thermal barrier.

49. The substrate support of claim 47, wherein a radially innermost edge of the heat shield is not in contact with the central shaft.

50. A heat shield assembly comprising: a heat shield according to claim 33; and the first thermal barrier.

51. The heat shield assembly of claim 50, further comprising a second thermal barrier configured to be connected to the central shaft, wherein the first thermal barrier is configured to be disposed on the second thermal barrier.

52. The heat shield assembly of claim 51, wherein: the central opening is hexagonal; the at least a portion of the first thermal barrier is hexagonal and engaged with the central opening; the second thermal barrier comprises twelve sides; and six of the twelve sides of the second thermal barrier are configured to be engaged with six sides of the first thermal barrier.

53. A heat shield for a platen of a substrate support of a substrate processing system, the heat shield comprising a body, wherein: the body comprises a central opening for a central shaft, wherein the central opening is configured to receive at least a portion of a first thermal barrier, a first portion comprising a first channel and a first ridge, wherein the first channel reflects thermal energy emitted by the platen back to the platen, a second portion comprising a second channel and a second ridge, wherein the second channel transmits thermal energy received from the platen to a processing chamber wall, and an overlapping portion disposed between the first portion and the second portion; and the body is configured to thermally shield a portion of the processing chamber wall from the platen.

54. The heat shield of claim 53, wherein the overlapping portion does not comprise a channel.

55. A heat shield for a platen of a substrate support, the heat shield comprising: a frame; a plurality of absorption-reflection-transmission segments in contact with or disposed as part of the frame and configured to affect at least a portion of a heat flow pattern between a distal reference surface and the platen, wherein one or more of the plurality of absorption-reflection-transmission segments comprises at least one heat flow variation characteristic that is different from another one or more of the plurality of absorption-reflection-transmission segments, wherein, the frame comprises: a first portion comprising a first channel and a first ridge, wherein the first channel reflects thermal energy emitted by the platen back to the platen, a second portion comprising a second channel and a second ridge, wherein the second channel transmits thermal energy received from the platen to a processing chamber wall, and an overlapping portion disposed between the first portion and the second portion. a central opening configured to receive a shaft of the substrate support, and a plurality of window portions configured to be at least partially covered by the plurality of absorption- reflection-transmission segments in a given location; and the plurality of absorption-reflection-transmission segments are configured to be disposed in or above at least one of the plurality of window portions and held by the frame.

56. The heat shield of claim 55, wherein the absorption-reflection-transmission segments are configured to adjust at least a portion of the heat flow pattern between the distal reference surface and the platen.

57. The heat shield of claim 55, wherein the absorption-reflection-transmission segments are at least one of a dispersed portion, a plurality of layers, or a blanket layer.

58. The heat shield of claim 55, wherein the absorption-reflection-transmission segments are disposed at least one of radially or azimuthally with respect to each other.

59. The heat shield of claim 55, wherein the plurality of absorption-reflection-transmission segments are at different azimuthal or radial locations on the frame.

60. The heat shield of claim 55, wherein one or more of the plurality of absorption-reflection-transmission segments comprise at least one of (i) one or more holes, or (ii) one or more pockets.

61. The heat shield of claim 55, wherein one or more of the plurality of absorption-reflection-transmission segments comprise at least one of (i) one or more ridges, or (ii) one or more grooves.

62. The heat shield of claim 55, wherein one or more of the plurality of absorption-reflection-transmission segments comprise at least one of a plurality of thicknesses or different materials.

63. The heat shield of claim 55, wherein one or more of the plurality of absorption-reflection-transmission segments are implemented as different at least one of a blanket layer or radially adjacent layers.

64. The heat shield of claim 55, the frame is configured to be attached to a shaft at a location between the platen and the distal reference surface, the distal reference surface being a surface of a process chamber wall.

65. The heat shield of claim 55, the plurality of absorption-reflection-transmission segments are configured to minimize azimuthal and radial temperature non-uniformities of the platen.

66. The heat shield of claim 55, wherein one or more of the plurality of absorption-reflection-transmission segments have at least one of a different shape, size, material, profile, or pattern than another or more of the plurality of absorption-reflection-transmission segments.

67. A method of manufacturing a heat shield for a platen of a substrate support, the method comprising: designing a first heat shield to provide one or more critical dimensions of a first substrate, including setting a plurality of parameters of the first heat shield to provide a predetermined heat flow pattern variation characteristic during use of the first heat shield; machining the first heat shield according to the parameters; performing a deposition or etching operation to deposit a layer on the first substrate or etch a layer of the first substrate while using the first heat shield; and repeating the designing, machining, and performing steps to provide a second heat shield to provide one or more critical dimensions of a second substrate, including setting a plurality of parameters of the second heat shield to provide a predetermined heat flow pattern variation characteristic during use of the second heat shield. performing a metrology operation to measure the one or more critical dimensions; analyzing data generated as a result of performing the metrology operation; and determining whether to redesign the first heat shield to meet the first predetermined criteria for the one or more critical dimensions.

68. The method of claim 67, further comprising, in response to determining to redesign the first heat shield: adjusting the parameters to provide the predetermined heat flux pattern variation characteristics; machining a second heat shield according to the adjusted parameters; performing a deposition or etching operation to deposit a layer on a second substrate or etch a layer of the second substrate while using the second heat shield; performing another metrology operation to measure the one or more critical dimensions; analyzing data generated as a result of performing the other metrology operation; and determining whether to redesign the second heat shield to meet the first predetermined criteria for the one or more critical dimensions.

69. The method of claim 67, further comprising: reconfiguring the first heat shield to fine tune one or more of the parameters to set or improve the one or more critical dimensions; performing a deposition or etching operation to deposit a layer on a second substrate or etch a layer of the second substrate while using the first heat shield; performing a metrology operation to measure the one or more critical dimensions; analyzing data generated as a result of performing the metrology operation; and determining whether to redesign the first heat shield to meet the first predetermined criteria for the one or more critical dimensions.

70. The method of claim 69, wherein fine tuning the one or more parameters of the heat shield includes at least one of determining a number of absorption- reflection-transmission segments to include, determining locations of the absorption- reflection-transmission segments on a body of the heat shield, or determining a type of the absorption- reflection-transmission segments.

71. The method of claim 69, further comprising machining a monolithic heat shield based on the fine tuned one or more parameters.

72. The method of claim 67, further comprising machining a monolithic heat shield based on the parameters.

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