Mask, method of setting mask, and method of setting display panel using the same

Abstract

The present application relates to a method of providing a deposition mask, a method of providing a display panel and a deposition mask. The method of providing a mask comprises: providing a first mask layer facing a second mask layer; in the second mask layer, providing a first opening corresponding to a deposition opening of the mask; providing an auxiliary layer, the auxiliary layer facing the first mask layer and the second mask layer being located therebetween and covering the first opening; in the auxiliary layer, providing a second opening corresponding to the first opening and exposing the first mask layer to outside the auxiliary layer; in the first mask layer, by using the auxiliary layer as a mask, providing a third opening corresponding to the first opening and the second opening; and separating the auxiliary layer from the first mask layer and the second mask layer to provide a deposition mask having the first mask layer containing the third opening and the second mask layer containing the first opening.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to and all benefits arising therefrom of Korean Patent Application No. 10-2020-0158486, filed on November 24, 2020, the entire contents of which are hereby incorporated by reference. Technical Field

[0003] This disclosure relates herein to a deposition mask with improved reliability, a method for setting a deposition mask, and a method for setting a display panel using a deposition mask. Background Technology

[0004] The display panel may include multiple pixels. Each of the multiple pixels may include a light-emitting pattern disposed between facing electrodes. The light-emitting pattern can be set by various methods, one of which may be a deposition method using a deposition mask. The light-emitting pattern can be set using a deposition mask in which a through portion is defined. The light-emitting pattern can be set to the area exposed through the through portion. The shape of the light-emitting pattern can be controlled according to the shape of the through portion of the deposition mask. Summary of the Invention

[0005] This disclosure provides a deposition mask with improved reliability relative to the deposition process, a method for setting the deposition mask, and a method for setting a display panel using the deposition mask.

[0006] An embodiment provides a method for setting a deposition mask, the method comprising: setting a first mask layer, setting a second mask layer on the first mask layer, setting a first opening in the second mask layer, setting an auxiliary layer on the second mask layer to cover the first opening, setting a second opening in the auxiliary layer, setting a third opening in the first mask layer by using the second opening of the auxiliary layer, and setting an auxiliary layer separate from the first mask layer and the second mask layer.

[0007] In an implementation, when viewed in a plan view, the size of the third opening in the first mask layer can be smaller than the size of the first opening in the second mask layer.

[0008] In this implementation, the thickness of the auxiliary layer can be greater than the thickness of the second mask layer.

[0009] In one implementation, a portion of a surface of the first mask layer may be exposed through a first opening in the second mask layer.

[0010] In one embodiment, setting a first opening in the second mask layer may include: setting a first photoresist layer on the second mask layer, setting a first exposure mask above the first photoresist layer, setting a first photoresist pattern layer by patterning the first photoresist layer through the first exposure mask, and setting a first opening in the second mask layer by using the first photoresist pattern layer.

[0011] In one embodiment, setting a second opening in the auxiliary layer may include: setting a second photoresist layer on the auxiliary layer, setting a first exposure mask above the second photoresist layer, setting a second photoresist pattern layer by patterning the second photoresist layer through the first exposure mask, and setting a second opening in the auxiliary layer by using the second photoresist pattern layer.

[0012] In one embodiment, setting a second opening in the auxiliary layer may include: setting a second photoresist layer on the auxiliary layer, setting a second exposure mask above the second photoresist layer, setting a second photoresist pattern layer by patterning the second photoresist layer through the second exposure mask, and setting a second opening in the auxiliary layer by using the second photoresist pattern layer, wherein the surface area of ​​the light-transmitting region defined in the first exposure mask is greater than the surface area of ​​the light-transmitting region defined in the second exposure mask.

[0013] In an implementation, the maximum width of the second opening in the auxiliary layer can be smaller than the maximum width of the first opening in the second mask layer.

[0014] In one implementation, the sidewall of the second mask layer defining the first opening may surround the sidewall of the first mask layer defining the third opening.

[0015] In an implementation, the material constituting the second mask layer may be different from the material constituting the auxiliary layer.

[0016] In one embodiment, the exposure mask used to set the first opening of the second mask layer can be the same as the exposure mask used to set the second opening of the auxiliary layer.

[0017] In one implementation, a portion of the auxiliary layer may overlap with the third opening of the first mask layer.

[0018] In an implementation, when viewed in a plan view, the area of ​​the third opening of the first mask layer may be equal to or less than the area of ​​the first opening of the second mask layer, and when viewed in a plan view, the area of ​​the third opening of the first mask layer may be greater than the area of ​​the second opening of the auxiliary layer.

[0019] In one implementation, the sidewalls defining the first opening of the second mask layer can be completely covered by an auxiliary layer.

[0020] In one embodiment, a method for manufacturing a display panel includes: setting a mask defining a through portion; preparing a target substrate; setting the mask on the target substrate; setting a light-emitting pattern on a light-emitting area of ​​the target substrate corresponding to the through portion; and removing the mask, wherein setting the mask includes: setting a first mask layer; setting a second mask layer on the first mask layer; setting a first opening in the second mask layer; setting an auxiliary layer on the second mask layer to cover the first opening; setting a second opening in the auxiliary layer; setting a third opening in the first mask layer by using the second opening of the auxiliary layer; and removing the auxiliary layer, wherein when viewed in a plan view, the area of ​​the third opening of the first mask layer is equal to or smaller than the area of ​​the first opening of the second mask layer; and when viewed in a plan view, the area of ​​the third opening of the first mask layer is larger than the area of ​​the second opening of the auxiliary layer.

[0021] In this implementation, the thickness of the auxiliary layer can be greater than the thickness of the second mask layer.

[0022] In one embodiment, the exposure mask used to set the first opening of the second mask layer can be the same as the exposure mask used to set the second opening of the auxiliary layer.

[0023] In one embodiment, setting a mask on a target substrate may include setting a mask such that a first mask layer is disposed between the target substrate and a second mask layer.

[0024] In one embodiment, the mask includes a first mask layer defining a first mask opening and a second mask layer defining a second mask opening larger than the first mask opening, wherein the first mask layer comprises polyimide and the second mask layer comprises titanium (Ti) or titanium nitride (TiN). x ) or molybdenum (Mo).

[0025] In this implementation, each of the first mask layer and the second mask layer may be a fluorine etched layer. Attached Figure Description

[0026] The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings:

[0027] Figure 1 This is an exploded perspective view of an implementation of the mask assembly;

[0028] Figure 2 This is a cross-sectional view of an implementation of the mask;

[0029] Figure 3 This is a flowchart illustrating an implementation of the method for setting a mask;

[0030] Figures 4A to 4J This is a cross-sectional view illustrating the operation in an implementation of the method for setting a mask;

[0031] Figure 5 This is a cross-sectional view illustrating an implementation of the method for setting a mask;

[0032] Figure 6 This is a cross-sectional view illustrating an implementation of the method for setting a mask;

[0033] Figure 7 This is a rear view showing an implementation of the mask;

[0034] Figure 8 This is a cross-sectional view of an embodiment of the display panel;

[0035] Figure 9 This is a cross-sectional view of an embodiment of the deposition equipment;

[0036] Figure 10 This is an enlarged cross-sectional view showing an embodiment of a portion of the target substrate relative to the mask; and

[0037] Figure 11A and Figure 11B This is a cross-sectional view illustrating the operation of an implementation of the method for setting up the display panel. Detailed Implementation

[0038] The invention will now be described more fully below with reference to the accompanying drawings, in which various embodiments are illustrated. However, the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The same reference numerals throughout denote the same elements.

[0039] In this specification, it should be understood that when an element (or region, layer, part, etc.) is referred to as being associated with another element, such as being "on," "connected to," or "attached to" another element, it can be directly on, directly connected to, or attached to the other element, or there may be an intermediate element between them. Conversely, when an element (or region, layer, part, etc.) is referred to as being associated with another element, such as being "directly" on, "directly connected to," or "directly attached to" another element, there is no intermediate element between them.

[0040] The same numbers always represent the same components. Furthermore, in the accompanying drawings, the thickness, proportions, and size of the components are exaggerated for the purpose of effectively describing the technical content.

[0041] Although the terms first, second, etc., can be used to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of the invention, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element. Unless the context clearly indicates otherwise, the singular form is intended to include the plural form as well.

[0042] Furthermore, terms such as "below," "lower part," "above," and "upper part" may be used to describe the relationships between the components shown in the accompanying drawings. These terms are relative concepts and are described based on the directions shown in the accompanying drawings.

[0043] As used herein, “about” or “approximately” includes the value as well as the average of the values ​​within an acceptable range of deviations from the particular value, as determined by a person skilled in the art taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., limitations of the measurement system). For example, “about” may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the value.

[0044] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Furthermore, it should be understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their dictionary-based meaning in the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0045] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, unless the context clearly indicates otherwise, “a,” “an,” “the,” and “at least one” do not indicate a limitation of quantity and are intended to include both the singular and the plural. For example, unless the context clearly indicates otherwise, “an element” has the same meaning as “at least one element.” “At least one” should not be construed as limiting “a” or “an.” “Or” means “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. It should be understood that, when used in this specification, the terms “includes” or “comprises” specify the presence of the stated features, integrals, steps, operations, elements, components, or combinations thereof, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, or combinations thereof.

[0046] Embodiments are described herein with reference to schematic cross-sectional views as idealized embodiments. Similarly, variations in the shapes shown in the figures should be anticipated, for example, due to manufacturing techniques and / or tolerances. Therefore, the embodiments described herein should not be construed as limited to the specific region shapes shown herein, but should include, for example, deviations in shape due to manufacturing processes. For example, regions shown or described as flat may generally have rough and / or non-linear characteristics. Furthermore, sharp angles shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate precise shapes of regions, nor are they intended to limit the scope of the claims.

[0047] In the following description, embodiments will be described with reference to the accompanying drawings.

[0048] Figure 1 This is an exploded perspective view of an implementation of the mask component MA.

[0049] Reference Figure 1 Mask assembly MA can be used in the deposition of material DM (see Figure 10 In a process of deposition onto a target, the mask assembly MA may include a frame FR and a mask MK (e.g., a deposition mask).

[0050] The top surface of each component is parallel to the plane defined by the intersecting first direction DR1 and second direction DR2. The thickness direction of each component is indicated by a third direction DR3 intersecting each of the first direction DR1 and the second direction DR2. The upper side (or upper portion) and lower side (or lower portion) of each component are separated from each other along the third direction DR3. However, the directions designated as the first direction DR1, the second direction DR2, and the third direction DR3 are relative concepts and can therefore be changed to other directions.

[0051] When viewed in a plan view, the frame FR can have an annular shape. That is, the opening OP can be configured to include the center area of ​​the frame FR. The opening OP can be a hole that extends from the top surface of the frame FR to the bottom surface of the frame FR and is open at both the top and bottom surfaces of the frame FR. The plan view can be a view along the third direction DR3. Figure 1 The diagram schematically illustrates an example of a rectangular ring shape as a planar shape for a frame FR, but the planar shape of the frame FR is not limited to this. In implementations, for example, the frame FR can have various planar shapes, such as circular rings and polygonal rings.

[0052] FR framework in Figure 1The frame is schematically shown as being positioned below the mask MK to support it, but the invention is not limited thereto. The frame FR may be positioned both above and below the edge of the mask MK and support the mask MK, extending the mask MK in a first direction DR1 and a second direction DR2.

[0053] The mask MK may include a plurality of cell regions CA, which are arranged along a first direction DR1 and a second direction DR2. In an embodiment, the cell regions CA are shown such that three cell regions are spaced apart from each other along the first direction DR1 and the second direction DR2, but this is shown as an example. In an embodiment, for example, the mask MK may include a larger... Figure 1 The shown unit regions CA are more than one unit region CA. Furthermore, unit regions CA can be arranged along only one of the first direction DR1 or the second direction DR2. Additionally, only one unit region CA corresponding to the mask MK can be provided, but the invention is not limited to any one embodiment.

[0054] The mask MK may have a plate-like shape extending along both the first direction DR1 and the second direction DR2. The mask MK may have an integrated plate-like shape such that the cell regions CA are connected to each other. In an embodiment, a portion of one of the cell regions CA (e.g., a first cell region) may extend to define another cell region CA (e.g., a second cell region adjacent to the first cell region).

[0055] The mask MK may include a first mask layer MK1 (see Figure 2 The first mask layer MK1 comprises or is made of a polymer material. Therefore, the mask MK may not have a rod-like shape extending in either the first direction DR1 or the second direction DR2, but may instead have a plate-like shape extending in both the first direction DR1 and the second direction DR2 to correspond to the planar region of the frame FR. However, the invention is not limited thereto, and the mask MK may have a rod-like shape extending in either the first direction DR1 or the second direction DR2. In this case, the mask assembly MA may comprise a plurality of mask MKs, the plurality of mask MKs comprising a plurality of masks, and the plurality of masks may be spaced apart from each other and / or disconnected along another of the first direction DR1 and the second direction DR2.

[0056] Each cell region CA may be configured to include multiple through-portions (OPPs). The through-portions may define deposition openings or deposition through-portions. The through-portions may be spaced apart from each other along a first direction DR1 and a second direction DR2. Each of the through-portions may be defined to extend through the mask MK along its thickness direction (e.g., a third direction DR3). Within the cell region CA, solid portions of the mask MK (e.g., a first solid portion) may alternate with the through-portions. Within the mask MK, the cell region CA may alternate with solid portions (e.g., a second solid portion).

[0057] Figure 2 This is a cross-sectional view of an implementation of the mask MK. Figure 2 It shows along Figure 1 A sectional view taken from line I-I'.

[0058] Reference Figure 1 and Figure 2 The mask MK may include a first mask layer MK1 and a second mask layer MK2. The second mask layer MK2 may be disposed on one surface of the first mask layer MK1. The first mask layer MK1 may be referred to as a polymer material layer or a master mask layer, and the second mask layer MK2 may be referred to as an electrode layer.

[0059] At least one of the through-portions OPP can be defined in the mask MK. In an embodiment, for example, multiple through-portions OPP can be defined in the mask MK. The multiple through-portions OPP can be spaced apart from each other along a first direction DR1 and / or along a second direction DR2, and can form a certain pattern. Each of the multiple through-portions OPP can be defined to extend through the mask MK along a third direction DR3. The multiple through-portions OPP can be open at both the top surface and the bottom surface of the mask MK. The first mask layer MK1 can define the top surface farthest from the frame FR, and the second mask layer MK2 can define the bottom surface closest to the frame FR.

[0060] A first mask opening MKO1 can be defined in a first mask layer MK1, and a second mask opening MKO2 can be defined in a second mask layer MK2. The through-portion OPP can be defined together by the first mask opening MKO1 and the second mask opening MKO2. The dimensions (e.g., size, area, width, planar area, surface area, etc.) of the second mask opening MKO2 can be larger than the dimensions of the first mask opening MKO1. In an embodiment, each of the first mask opening MKO1 and the second mask opening MKO2 has a first dimension along a first direction DR1, a second dimension along a second direction DR2, and a planar area defined by the product of the first and second dimensions. When viewed along the thickness direction of the mask MK or in a plan view, or when viewed in a direction parallel to a third direction DR3, the planar area of ​​the first mask opening MKO1 can be equal to or smaller than the planar area of ​​the second mask opening MKO2. The solid portion of the second mask layer MK2 can be spaced apart from the first mask opening MKO1. That is, the first mask opening MKO1 can be unobstructed by the second mask layer MK2. Therefore, during the deposition process using mask MK, the defect of no deposition material DM being deposited on the target area due to the second mask layer MK2 can be eliminated.

[0061] The first mask layer MK1 may include a polymer material. In embodiments, for example, the first mask layer MK1 may include a polymer material such as polyimide (“PI”), polycarbonate (“PC”), polyethylene naphthalate (“PEN”), or polyethylene terephthalate (“PET”), but the invention is not particularly limited thereto.

[0062] The second mask layer MK2 may include a material that can be secured to an electrostatic chuck. Securement to the electrostatic chuck indicates an attractive force between the electrostatic chuck and the second mask layer MK2 (e.g., at a solid portion of the second mask layer MK2). The second mask layer MK2 may include a metal, a metal alloy, a conductive metal nitride, or a transparent conductive oxide. In embodiments, for example, the second mask layer MK2 may include conductive metals such as nickel (Ni), gold (Au), titanium (Ti), and molybdenum (Mo), or titanium nitride (TiN). x It is a conductive metal nitride or at least one of a conductive metal oxide such as indium tin oxide (“ITO”) and indium zinc oxide (“IZO”).

[0063] The thickness of the first mask layer MK1 can be determined by considering the durability and deposition accuracy of the mask MK. In an embodiment, for example, the thickness of the first mask layer MK1 can be from about 5 micrometers (μm) to about 15 micrometers (μm), but the invention is not particularly limited thereto. The thickness of the second mask layer MK2 can be less than the thickness of the first mask layer MK1. In an embodiment, for example, the thickness of the second mask layer MK2 can be about 500 angstroms. approximately 1500 Angers However, the present invention is not particularly limited thereto.

[0064] According to an embodiment, the mask MK may include a first mask layer MK1 together with a second mask layer MK2, wherein the first mask layer MK1 comprises a polymer resin and the second mask layer MK2 comprises a material different from the polymer resin. In this case, the mask MK is thinner than a conventional mask made entirely of an alloy such as Invar alloy, and the cost and time of setting through portions of the OPP, etc., can be reduced. Furthermore, the mask MK includes a second mask layer MK2 comprising a conductive material, and therefore, the mask MK and the target substrate SUB (see [link to documentation]) are also connected. Figure 9 They can come into close contact with each other during the deposition process. Therefore, shadows appearing in the deposition process are reduced, and thus, a more precise deposition process can be performed.

[0065] In the following text, embodiments of the method for setting or manufacturing a mask MK will be described. When describing the method for setting a mask MK according to the embodiments, the same reference numerals are given to the same components as those described above, and their detailed descriptions will be omitted.

[0066] Figure 3 This is a flowchart illustrating an implementation of a method for setting a mask MK. Figures 4A to 4J This is a cross-sectional view illustrating an implementation of a method for setting a mask MK.

[0067] Reference Figure 3 , Figure 4A and Figure 4B The initial first mask layer MK1L (S100) can be set or formed by coating the carrier substrate CS with polymer resin MT1.

[0068] Reference Figure 3 , Figure 4B and Figure 4CAn initial second mask layer MK2L is formed or disposed by depositing conductive material MT2 on one surface of an initial first mask layer MK1L (S200). The initial second mask layer MK2L may form an interface with the initial first mask layer MK1L. The initial first mask layer MK1L and the initial second mask layer MK2L are formed sequentially. The conductive material MT2 may be physically deposited, chemically deposited, or coated on one surface of the initial first mask layer MK1L. In embodiments, for example, physical deposition may be a sputtering process, and chemical deposition may be a chemical vapor deposition (“CVD”) method or a plasma-enhanced chemical vapor deposition (“PECVD”) method.

[0069] Subsequently, a first photoresist layer PR1 can be formed or disposed on the initial second mask layer MK2L. A first exposure mask PMK is disposed above the first photoresist layer PR1 to pattern the first photoresist layer PR1. The exposure process can be performed with the first exposure mask PMK disposed above the first photoresist layer PR1. The exposure process may include light exposure.

[0070] A light-transmitting region PMA and a light-blocking region PMB can be defined in a first exposure mask PMK. The light-transmitting region PMA may have a first transmittance, and the light-blocking region PMB may have a second transmittance. The second transmittance may be lower than the first transmittance. In an embodiment, for example, the first transmittance may be about 100%, and the second transmittance may be about 0%.

[0071] Reference Figure 3 , Figure 4C and Figure 4D The first photoresist layer PR1, whose chemical properties have been altered by the light of the exposure process, is removed by the development process, and thus a first photoresist pattern layer PR1T is formed from the first photoresist layer PR1 (S300).

[0072] A first light aperture PROP1 can be defined in a first photoresist pattern layer PR1T. The first light aperture PROP1 can be set or formed by removing a portion of the first photoresist layer PR1 that overlaps with or corresponds to the light-transmitting region PMA. The first light aperture PROP1 can be defined as extending from the top surface of the first photoresist pattern layer PR1T through the first photoresist pattern layer PR1T to the bottom surface of the first photoresist pattern layer PR1T.

[0073] Reference Figure 3 , Figure 4D and Figure 4EA second mask layer MK2 with a second mask opening MKO2 is formed in an initial second mask layer MK2L by using a first photoresist pattern layer PR1T as a mask to set or form a first opening corresponding to a second mask opening MKO2 (S400). A portion of the initial second mask layer MK2L not covered by the first photoresist pattern layer PR1T can be removed, for example, by an etching process. In an embodiment, for example, a portion of the initial second mask layer MK2L can be removed by a wet etching process, but the invention is not particularly limited thereto. The initial first mask layer MK1L is exposed to the outside of the second mask layer MK2 at the second mask opening MKO2.

[0074] An auxiliary layer AMK (S500) can be provided or formed on the second mask layer MK2 having a second mask opening MKO2. The auxiliary layer AMK can completely cover the second mask opening MKO2 of the second mask layer MK2. The auxiliary layer AMK can extend from the second mask opening MKO2 along the sidewall M2S of the second mask layer MK2 (see...). Figure 4I It extends along the top surface of the second mask layer MK2. The auxiliary layer AMK can be referred to as a helper layer, a hard mask layer, or an intermediate mask layer.

[0075] The material of the auxiliary layer AMK can be different from the material of the second mask layer MK2. The auxiliary layer AMK can include aluminum (Al), copper (Cu), indium tin oxide (“ITO”), or indium zinc oxide (“IZO”). In an embodiment, for example, when the auxiliary layer AMK includes or is made of indium tin oxide, the second mask layer MK2 does not include or is not made of indium tin oxide.

[0076] Since the auxiliary layer AMK must fully cover the second mask opening MKO2 disposed in the second mask layer MK2, the thickness AMK-T of the auxiliary layer AMK can be equal to or greater than the thickness MK2-T of the second mask layer MK2. In an embodiment, for example, the thickness AMK-T of the auxiliary layer AMK can be twice the thickness MK2-T of the second mask layer MK2, but the invention is not particularly limited thereto. Furthermore, the auxiliary layer AMK can be used as a hard mask during the initial patterning of the first mask layer MK1L. Therefore, the thickness AMK-T of the auxiliary layer AMK can be large enough to be used as a hard mask. In an embodiment, for example, the thickness AMK-T of the auxiliary layer AMK can be approximately 2000 angstroms. However, the present invention is not particularly limited thereto.

[0077] Reference Figure 3 , Figure 4F and Figure 4GA second photoresist layer PR2 is formed or disposed on the auxiliary layer AMK. A first exposure mask PMK is disposed above the second photoresist layer PR2 to pattern the second photoresist layer PR2. The exposure process can be performed with the first exposure mask PMK disposed above the second photoresist layer PR2.

[0078] The second photoresist layer PR2, whose chemical properties have been altered by the light in the exposure process, is removed by the development process, and thus a second photoresist pattern layer PR2T is formed (S600). A second light aperture PROP2 can be defined in the second photoresist pattern layer PR2T. The maximum width WT2 of the second light aperture PROP2 can be smaller than the maximum width WT1 of the first light aperture PROP1 (see...). Figure 4D ).

[0079] When the second photoresist layer PR2 is patterned, the first exposure mask PMK used can be the same as when the first photoresist layer PR1 (see...) Figure 4C The first exposure mask PMK used during patterning is the same. The exposure amount, exposure time, or exposure intensity can be controlled to make the second aperture PROP2 smaller than the first aperture PROP1 (see...). Figure 4D Alternatively, the material of the second photoresist layer PR2 may include the same material as the first photoresist layer PR1 (see [link to original text]). Figure 4C Different materials.

[0080] Reference Figure 3 , Figure 4G and Figure 4H A second opening AMOP (or auxiliary opening) can be formed in the auxiliary layer AMK by using the second photoresist pattern layer PR2T as a mask (S700). A portion of the auxiliary layer AMK not covered by the second photoresist pattern layer PR2T can be removed by an etching process. In some embodiments, for example, a portion of the auxiliary layer AMK can be removed by a wet etching process, but the invention is not particularly limited thereto.

[0081] Reference Figure 3 , Figure 4H and Figure 4I A portion of the initial first mask layer MK1L can be exposed to the outside of the auxiliary layer AMK through the second opening AMOP. Using the auxiliary layer AMK as a mask, an etching process can be performed on the exposed portion of the initial first mask layer MK1L. In an embodiment, for example, a portion of the initial first mask layer MK1L can be removed by a dry etching process, but the invention is not particularly limited thereto. The portion of the initial first mask layer MK1L is etched, and thus, a third opening corresponding to the first mask opening MKO1 can be provided (S800).

[0082] According to one or more embodiments, when a first mask opening MKO1 is formed in the initial first mask layer MK1L, the second mask layer MK2 can be completely covered by the auxiliary layer AMK. The sidewalls M2S of the second mask layer MK2 defining the second mask opening MKO2 can be completely covered by the auxiliary layer AMK. Therefore, the material of the second mask layer MK2 can be selected without considering the etch selectivity of the process relative to the patterned auxiliary layer AMK. That is, the degree of freedom in selecting the material for the second mask layer MK2 can be increased.

[0083] In some embodiments, for example, if the initial first mask layer MK1L comprises polyimide, a fluorine-based material can be used when etching the initial first mask layer MK1L. Since the second mask layer MK2 is completely covered by the auxiliary layer AMK, various materials can be selected, not limited to fluorine-resistant materials. In some embodiments, for example, titanium (Ti) or titanium nitride (TiN) etched with a fluorine-based material. x Molybdenum (Mo) or molybdenum (Mo) can be used for the second mask layer MK2.

[0084] A fluorine-resistant material can be selected for the auxiliary layer AMK. Since the auxiliary layer AMK is not included in the mask MK (see...),... Figure 4J The auxiliary layer AMK can be made of a material with relatively low flexibility. That is, various materials can be selected for the auxiliary layer AMK, provided that the material is resistant to the material of the initial etching of the first mask layer MK1L. In an embodiment, for example, the auxiliary layer AMK may include indium zinc oxide or aluminum (Al).

[0085] Figure 4I The maximum width M2-W of the second mask opening MKO2, the maximum width AM-W of the second opening AMOP, and the maximum width M1-W of the first mask opening MKO1 are shown. The maximum width M2-W of the second mask opening MKO2 can be greater than the maximum width AM-W of the second opening AMOP. The maximum width M2-W of the second mask opening MKO2 can be equal to or greater than the maximum width M1-W of the first mask opening MKO1. The maximum width M1-W of the first mask opening MKO1 can be greater than the maximum width AM-W of the second opening AMOP. Therefore, a portion of the auxiliary layer AMK (e.g., the protruding tip portion) can extend further than the sidewall M1S of the first mask layer MK1 to overlap with or extend into the first mask opening MKO1 of the first mask layer MK1.

[0086] When viewed in a plan view, the sidewall M2S of the second mask layer MK2 defining the second mask opening MKO2 may overlap with both the auxiliary layer AMK and the first mask layer MK1. When viewed in a plan view, the sidewall AMS of the auxiliary layer AMK defining the second opening AMOP may not overlap with either the first mask layer MK1 or the second mask layer MK2. In an embodiment, for example, the sidewall AMS of the auxiliary layer AMK may overlap with both the second mask opening MKO2 and the first mask opening MKO1. When viewed in a plan view, the sidewall M1S of the first mask layer MK1 defining the first mask opening MKO1 may overlap with the auxiliary layer AMK but may not overlap with the second mask layer MK2. When viewed in a plan view, the sidewall M2S of the second mask layer MK2 may surround the sidewall M1S of the first mask layer MK1 defining the first mask opening MKO1.

[0087] Reference Figure 3 , Figure 4I and Figure 4J The auxiliary layer AMK can be removed, for example, by an etching process (S900). In an embodiment, the auxiliary layer AMK can be removed by a wet etching process, but the invention is not particularly limited thereto. Subsequently, the mask MK is separated from the carrier substrate CS to set the mask MK. The mask MK can be attached to the frame FR (see...). Figure 1 ).

[0088] According to one or more embodiments of the present invention, the auxiliary layer AMK, including the protruding tip portion overlapping with the first mask opening MKO1, can be completely removed. Therefore, in deposition processes using mask MK, deposition accuracy and reliability can be improved.

[0089] Figure 5 This is a cross-sectional view illustrating an implementation of a method for setting a mask MK. For example, Figure 5 It can be shown with Figure 4F The cross-sectional view corresponding to the operation. In the description Figure 5 When, the description will be related to Figure 4F The differences between the components.

[0090] Reference Figure 5 A second photoresist layer PR2 is set or formed on the auxiliary layer AMK. A second exposure mask PMK-1 can be disposed on top of the second photoresist layer PR2. The second exposure mask PMK-1 can be disposed on top of the aforementioned layer. Figure 4C The first exposure mask shown is PMK, which is a different exposure mask.

[0091] A light-transmitting region PMA-1 and a light-blocking region PMB-1 can be defined in a second exposure mask PMK-1. The planar area of ​​the light-transmitting region PMA-1 defined in the second exposure mask PMK-1 can be smaller than the planar area of ​​the light-transmitting region PMA defined in the first exposure mask PMK (see...). Figure 4C The solid portion of the second exposure mask PMK-1 extends further than the sidewall M2S of the second mask layer MK2 and enters the second mask opening MKO2.

[0092] Figure 6 This is a cross-sectional view illustrating an embodiment of the method for setting the mask MK. In the embodiment, for example, Figure 6 It can be shown with Figure 4F The cross-sectional view corresponding to the operation. In the description Figure 6 When, the description will be related to Figure 4F The components are different.

[0093] Reference Figure 6 A second photoresist layer PR2-1 is formed or disposed on the auxiliary layer AMK. A first exposure mask PMK is disposed above the second photoresist layer PR2-1. The first exposure mask PMK can be combined with... Figure 4C The first exposure mask PMK shown is the same.

[0094] The dimensions of the second photoaperture PROP2 set in the second photoresist layer PR2-1 (see...) Figure 4G ) smaller than the first photoresist layer PR1 (see Figure 4C The first optical aperture PROP1 set in ) (see Figure 4D ) size (see Figure 1 ).

[0095] Because the size of the second photoaperture PROP2 in the second photoresist layer PR2-1 is smaller than the size of the first photoaperture PROP1 using the same mask (e.g., the first exposure mask PMK), the thickness PRT-T1 of the second photoresist layer PR2-1 can be greater than [the size of the first photoaperture PROP1 using the same mask (e.g., the first exposure mask PMK)]. Figure 4D The thickness of the first photoresist pattern layer PR1T shown is PRT-T.

[0096] Figure 7 This is a rear view showing an embodiment of the mask MK.

[0097] Reference Figure 7When viewed in a plan view, the mask MK may include a first mask layer MK1 and a second mask layer MK2. The through-portion OPP may include a first mask opening MKO1 defined in the first mask layer MK1 and a second mask opening MKO2 defined in the second mask layer MK2. The first mask opening MKO1 and the second mask opening MKO2 may be aligned with each other to define the through-portion OPP. When viewed in a plan view, the planar dimensions of the first mask opening MKO1 may be smaller than the planar dimensions of the second mask opening MKO2. Therefore, a portion of the first mask layer MK1 may not be covered by the second mask layer MK2. A portion of the first mask layer MK1 may be exposed to the outside of the second mask layer MK2. In an embodiment, for example, a portion of the rear surface MK1s of the first mask layer MK1 may be exposed to the outside of the second mask layer MK2 through the second mask opening MKO2.

[0098] Figure 8 This is a cross-sectional view of an implementation of the display panel DP.

[0099] Reference Figure 8 The display panel DP can be an illuminated display panel. Figure 8 A cross-section corresponding to one of a plurality of pixels is shown, as well as a cross-section of two transistors T1 and T2 corresponding to the pixel and a light-emitting element OLED. The light-emitting element OLED can be an organic light-emitting element.

[0100] like Figure 8 As shown, the display panel DP may include a base layer BL, a circuit element layer ML disposed on the base layer BL, a display element layer EL disposed on the circuit element layer ML, and an encapsulation layer ECP disposed on the display element layer EL.

[0101] The base layer BL may include a glass substrate or a synthetic resin layer. The base layer BL may be disposed or formed on a support substrate used to manufacture the display panel DP, on which conductive layers, insulating layers, etc. are disposed or formed, and then the support substrate is removed.

[0102] The circuit element layer ML may include at least one insulating layer and circuit elements. Circuit elements include signal lines, pixel driving circuits, etc. The circuit element layer ML can be set or formed using processes such as coating and deposition to form insulating, semiconductor, and conductive layers, and using photolithography to pattern the insulating, semiconductor, and conductive layers.

[0103] In an embodiment, the circuit element layer ML may include a buffer layer BFL, a barrier layer BRL, and first insulating layers 10 to seventh insulating layers 70. Each of the buffer layer BFL, the barrier layer BRL, and the first insulating layers 10 to seventh insulating layers 70 may include one of an inorganic layer and an organic layer. Each of the buffer layer BFL and the barrier layer BRL may include an inorganic layer. At least one of the fifth insulating layer 50, the sixth insulating layer 60, and the seventh insulating layer 70 may include an organic layer.

[0104] Figure 8 The arrangement of the first active portion A1, the second active portion A2, the first gate G1, the second gate G2, the first source S1, the second source S2, the first drain D1, and the second drain D2 of the first transistor T1 and the second transistor T2 is illustrated illustratively. In an embodiment, the first active portion A1 and the second active portion A2 may comprise different materials. For example, the first active portion A1 may comprise a polysilicon semiconductor, and the second active portion A2 may comprise a metal-oxide-semiconductor semiconductor. Each of the first source S1 and the first drain D1 corresponds to a region having a higher doping concentration than the first active portion A1 and serves as an electrode. Each of the second source S2 and the second drain D2 corresponds to a region of the metal-oxide-semiconductor semiconductor that is reduced and serves as an electrode.

[0105] In this implementation, the first active portion A1 and the second active portion A2 may comprise the same semiconductor material. In this case, the second transistor T2 may have the same stacked structure as the first transistor T1, and the stacked structure of the circuit element layer ML may be further simplified.

[0106] The display element layer EL includes a pixel defining layer PDL and a light-emitting element OLED. The light-emitting element OLED can be an organic light-emitting diode or a quantum dot light-emitting diode. An anode AE ​​is disposed on a seventh insulating layer 70. At least a portion of the anode AE ​​is exposed through a pixel opening PDL-OP of the pixel defining layer PDL. The pixel opening PDL-OP of the pixel defining layer PDL can define a light-emitting region PXA. A non-light-emitting region NPXA can be adjacent to the light-emitting region PXA, so as to surround the light-emitting region PXA without being limited thereto.

[0107] Hole control layer (HCL) and electron control layer (ECL) can typically be disposed on the light-emitting region (PXA) and the non-light-emitting region (NPXA). The light-emitting pattern (EML) can be disposed in a discrete shape (e.g., a pattern) to correspond to the pixel aperture (PDL-OP). The light-emitting pattern (EML) can be deposited using a method different from that used to deposit the hole control layer (HCL) and electron control layer (ECL) in film form. The hole control layer (HCL) and electron control layer (ECL) can be disposed together or formed on multiple pixels using an aperture mask. Using one or more embodiments of the mask (MK), the light-emitting pattern (EML) can be disposed or formed in a patterned form to correspond to the pixel aperture (PDL-OP). The light-emitting pattern (EML) can be a deposited pattern disposed using the mask (MK). That is, the through portion (OPP) of the mask (MK) can correspond to a deposited pattern of planar shape, size, etc. However, the invention is not limited thereto. Similar to the light-emitting pattern (EML), the hole control layer (HCL) and electron control layer (ECL) can also be disposed or formed in a patterned form to correspond to the pixel aperture (PDL-OP) using one or more embodiments of the mask (MK).

[0108] The cathode (CE) can be disposed on the electronic control layer (ECL). The encapsulation layer (ECP) can be disposed on the cathode (CE). The encapsulation layer (ECP) can be a thin-film encapsulation (“TFE”) layer for encapsulating the display element layer (EL). The encapsulation layer (ECP) can include multiple thin films. The multiple thin films can include inorganic layers and organic layers. The encapsulation layer (ECP) can include an insulating layer for encapsulating the display element layer (EL) and multiple insulating layers for improving luminous efficiency.

[0109] Figure 9 This is a cross-sectional view of an embodiment of the deposition equipment DPD.

[0110] Reference Figure 9 The deposition apparatus DPD may include a chamber CHB (e.g., a deposition chamber), a deposition source S, a stage STG, a moving plate PP, and a mask assembly MA.

[0111] The chamber CHB provides a sealed space (e.g., a deposition space) in which deposition takes place. A deposition source S, a stage STG, a moving plate PP, and a mask assembly MA can be disposed within the chamber CHB. The chamber CHB may include at least one door GT. The chamber CHB can be opened and closed via the door GT. The target substrate SUB can enter and exit the chamber CHB via the door GT disposed within the chamber CHB.

[0112] The deposition source S includes a deposition material DM. Here, the deposition material DM can be a sublimated or evaporated material, and can include one or more of inorganic, metallic, and organic substances. The deposition source S is illustratively described as including materials for setting the light-emitting element OLED (see [link to OLED documentation]). Figure 8 ) boxes of organic matter.

[0113] A stage STG is positioned above the deposition source S. A mask assembly MA can be squarely positioned on the stage STG. The mask assembly MA can face the deposition source S, with the stage STG positioned between them. The stage STG can overlap with the frame FR of the mask assembly MA and thus support the mask assembly MA. The stage STG does not overlap with the opening OP of the frame FR. That is, the stage STG can be positioned outside the path of the deposition material DM supplied from the deposition source S to the target substrate SUB.

[0114] The target substrate SUB is disposed on the mask assembly MA. The target substrate SUB faces the deposition source S, and the mask assembly MA is located between them. The deposition material DM passes through multiple through-holes OPP of the mask MK and is deposited on the target substrate SUB.

[0115] The movable plate PP allows the target substrate SUB to be aligned on the mask assembly MA. The movable plate PP can move in the up-down or left-right directions. The magnet MN is disposed on the movable plate PP and can move together with the movable plate PP. Therefore, the target substrate SUB can be moved by magnetic force. In addition, the magnet MN can generate magnetic force to make the mask MK contact the lower part of the target substrate SUB, and thus can further improve the accuracy of the deposition process.

[0116] Figure 10 This is an enlarged cross-sectional view showing a portion of the target substrate SUB relative to the mask MK.

[0117] Reference Figure 8 , Figure 9 and Figure 10 The luminescent pattern EML can be set in a patterned form (e.g., discrete shape) using a mask MK to correspond to the pixel opening PDL-OP. More specifically, in a method of setting a deposition pattern using one or more embodiments of the mask MK, the deposition material DM deposited upward from the deposition source S is patterned by the mask MK, and the luminescent pattern EML can be set within the deposition apparatus DPD as a plurality of luminescent pattern EMLs to correspond to the interior of the pixel opening PDL-OP. That is, the first mask opening MKO1 of the first mask layer MK1 is the aforementioned third opening through which the deposition material DM exits the deposition mask. In the patterning of the luminescent pattern EML, the mask MK can be brought into contact with the target substrate SUB by a magnet MN included in the deposition apparatus DPD.

[0118] Figure 11A and Figure 11B This is a cross-sectional view illustrating an implementation of the operation in the method of setting up the display panel DP.

[0119] Reference Figure 1 , Figure 9 , Figure 11A and Figure 11B After the deposition material DM is deposited on the target substrate SUB in a pre-deposited or master substrate form using a deposition apparatus DPD, the mask assembly MA can be removed from the target substrate SUB. The initial substrate DP-I1 from which the mask assembly MA has been removed is in a state where a light-emitting pattern layer EPP (e.g., a deposited pattern) is formed on the target substrate SUB. The light-emitting pattern layer EPP can be set or formed corresponding to the cell regions CA of the mask MK. Each of the light-emitting pattern layers EPP can include multiple light-emitting patterns EML (see...). Figure 8 (This is not shown here.)

[0120] Subsequently, the initial substrate DP-I1 can be cut along dicing lines CL, which are configured to include multiple dicing lines CL and divide into multiple display panels DP-P. Display panels DP correspond to each of the display panels DP-P or are formed by each of the display panels DP-P. Display panels DP may include active areas AA. Active areas AA may include multiple pixels. Active areas AA may correspond to areas where a light-emitting pattern layer EPP is disposed.

[0121] According to one or more embodiments, multiple display panels DP-P can be set or formed by patterning one of the initial substrates DP-I1. Furthermore, since the mask MK used to set the display panels DP comprises a layer containing a polymer material such as polyimide (“PI”), a large mask process suitable for setting multiple display panels DP-P can be performed. Therefore, process time can be reduced, and process costs can be saved. However, the invention is not limited thereto. In embodiments, one of the display panels DP can be set from the initial substrate DP-I1 according to the size of the display panel DP.

[0122] As described above, the size of the second mask opening MKO2 defined in the second mask layer MK2, which is farther from the target substrate SUB, is larger than the size of the first mask opening MKO1 defined in the first mask layer MK1, which is closer to the target substrate SUB. During the deposition process using the mask MK, the defect that prevents the deposition material DM from being deposited on the target area due to the second mask layer MK2 can be eliminated.

[0123] Furthermore, the first mask opening MKO1 of the first mask layer MK1 can be set or formed by the auxiliary layer AMK used during the mask setup process. In this case, the freedom to select the material of the second mask layer MK2, which is completely covered by the auxiliary layer AMK, can be increased. In addition, the auxiliary layer AMK, including the protruding tip portion overlapping with the first mask opening MKO1, is completely removed, and therefore, deposition accuracy and deposition reliability can be improved when using the deposition process with the mask MK.

[0124] Although the invention has been described with reference to embodiments, it should be understood that various changes and modifications can be made to this disclosure by those skilled in the art or with ordinary knowledge of the art without departing from the spirit and technical scope of this disclosure as claimed. Therefore, the technical scope of this disclosure is not limited to the detailed description in the specification, but should be determined solely by the appended claims.

Claims

1. A method of setting a deposition mask, the method comprising: setting a first mask layer facing a second mask layer; in the second mask layer, setting a first opening corresponding to a deposition opening of the deposition mask and exposing the first mask layer to an outside of the second mask layer; setting an auxiliary layer facing the first mask layer with the second mask layer between the auxiliary layer and the first mask layer, and the auxiliary layer covering the first opening in the second mask layer; in the auxiliary layer, setting a second opening corresponding to the first opening and exposing the first mask layer to an outside of the auxiliary layer; in the first mask layer exposed to the outside of the auxiliary layer, setting a third opening corresponding to the first opening and the second opening by using the auxiliary layer having the second opening as a mask; and setting the auxiliary layer apart from the first mask layer and the second mask layer to set the deposition mask having the first mask layer including the third opening and having the second mask layer including the first opening.

2. The method of claim 1, wherein, In a plan view: each of the third opening in the first mask layer and the first opening in the second mask layer has a size, and the size of the third opening in the first mask layer is smaller than the size of the first opening in the second mask layer.

3. The method of claim 1, wherein, each of the auxiliary layer and the second mask layer has a thickness, and the thickness of the auxiliary layer is greater than the thickness of the second mask layer.

4. The method of claim 1, wherein, Within the deposition mask having the first mask layer and the second mask layer, a portion of the first mask layer is exposed to an outside of the second mask layer through the first opening in the second mask layer.

5. The method of claim 1, wherein, Setting the first opening in the second mask layer comprises: setting a first photoresist layer on an initial second mask layer; setting a first exposure mask facing the first photoresist layer; setting a first photoresist pattern layer by patterning the first photoresist layer using the first exposure mask; and setting the first opening in the initial second mask layer by using the first photoresist pattern layer as a mask.

6. The method of claim 5, wherein, Setting the second opening in the auxiliary layer comprises: setting a second photoresist layer on the auxiliary layer; setting the first exposure mask facing the second photoresist layer; setting a second photoresist pattern layer by patterning the second photoresist layer using the first exposure mask; and setting the second opening in the auxiliary layer by using the second photoresist pattern layer as a mask.

7. The method of claim 5, wherein, Setting the second opening in the auxiliary layer comprises: setting a second photoresist layer on the auxiliary layer; setting a second exposure mask different from the first exposure mask facing the second photoresist layer; setting a second photoresist pattern layer by patterning the second photoresist layer using the second exposure mask; and setting the second opening in the auxiliary layer by using the second photoresist pattern layer as a mask; wherein, The first and second exposure masks have a light-transmissive region corresponding to the first and second openings, respectively, The light-transmissive region has a size, and The size of the light-transmissive region of the first exposure mask is greater than the size of the light-transmissive region of the second exposure mask.

8. The method of claim 1, wherein, Each of the second openings in the auxiliary layer and the first openings in the second mask layer has a maximum width, and The maximum width of the second openings in the auxiliary layer is less than the maximum width of the first openings in the second mask layer.

9. The method of claim 1, wherein, The second mask layer includes a sidewall defining the first openings, and the first mask layer includes a sidewall defining the third openings, and The sidewall of the second mask layer surrounds the sidewall of the first mask layer.

10. The method of claim 1, wherein, Each of the second mask layer and the auxiliary layer includes a material, and The material of the second mask layer is different from the material of the auxiliary layer.

11. The method of claim 1, wherein, Each of the setting the first openings in the second mask layer and the second openings in the auxiliary layer uses an exposure mask, and The exposure mask used for setting the first openings in the second mask layer is the same as the exposure mask used for setting the second openings in the auxiliary layer.

12. The method of claim 1, wherein, The second mask layer includes a sidewall defining the first openings, the auxiliary layer includes a sidewall defining the second openings, and the first mask layer includes a sidewall defining the third openings, and The sidewall of the auxiliary layer is disposed further away from the sidewall of the second mask layer than a position corresponding to the sidewall of the first mask layer.

13. The method of claim 1, wherein, In a plan view of the deposition mask: Each of the first openings in the second mask layer, the second openings in the auxiliary layer, and the third openings in the first mask layer has a size, The size of the third openings in the first mask layer is equal to or less than the size of the first openings in the second mask layer, and The size of the third openings in the first mask layer is greater than the size of the second openings in the auxiliary layer.

14. The method of claim 1, wherein, The second mask layer includes a sidewall defining the first openings, and The sidewall of the second mask layer is completely covered by the auxiliary layer when the auxiliary layer is disposed.

15. A method of setting a display panel, the method comprising: setting a deposition mask in which a deposition through portion corresponds to a light-emitting pattern definition of the display panel; setting the deposition mask to face a target substrate of the display panel, the target substrate including a light-emitting region corresponding to the light-emitting pattern; setting the light-emitting pattern on the light-emitting region of the target substrate through the deposition through portion of the deposition mask; and and setting the deposition mask to be separated from the target substrate having the light emission pattern over the light emission region, wherein the setting the deposition mask includes: setting a first mask layer facing a second mask layer of the deposition mask; in the second mask layer, setting a first opening corresponding to a deposition opening of the deposition mask and exposing the first mask layer outside the second mask layer; setting an auxiliary layer facing the first mask layer with the second mask layer between the auxiliary layer and the first mask layer, and the auxiliary layer covering the first opening in the second mask layer; in the auxiliary layer, setting a second opening corresponding to the first opening and exposing the first mask layer outside the auxiliary layer; in the first mask layer exposed outside the auxiliary layer, setting a third opening corresponding to the first opening and the second opening by using the auxiliary layer having the second opening as a mask; and setting the auxiliary layer to be separated from the first mask layer and the second mask layer to set the deposition mask having the first mask layer including the third opening and having the second mask layer including the first opening, wherein in a plan view: each of the third opening in the first mask layer, the second opening in the auxiliary layer, and the first opening in the second mask layer has a size, the size of the third opening in the first mask layer is equal to or smaller than the size of the first opening in the second mask layer, and the size of the third opening in the first mask layer is greater than the size of the second opening in the auxiliary layer.

16. The method of claim 15, wherein, in the setting the deposition mask: each of the auxiliary layer and the second mask layer has a thickness, and the thickness of the auxiliary layer is greater than the thickness of the second mask layer.

17. The method of claim 15, wherein, in the setting the deposition mask: each of the setting the first opening in the second mask layer and the setting the second opening in the auxiliary layer uses an exposure mask, and the exposure mask for the setting the first opening in the second mask layer is the same as the exposure mask for the setting the second opening in the auxiliary layer.

18. The method of claim 15, wherein, the setting the deposition mask facing the target substrate includes setting the target substrate facing the second mask layer with the first mask layer between the target substrate and the second mask layer.

Images