Magnetic storage device and data destruction method

Abstract

The present invention discloses a magnetic storage device and a data destruction method thereof, relating to the field of magnetic storage. The magnetic storage device comprises: at least one destruction layer connected via a control line, and a magnetic tunnel junction disposed above each corresponding destruction layer; the destruction layer receives a destruction instruction and transmits the destruction instruction to each other destruction layer via a control line, so that all destruction layers change the resistance state of the corresponding magnetic tunnel junction through a field effect, thereby destroying the data corresponding to the magnetic storage device package. Any of the at least one destruction layer is implemented as a destruction device connected via a coil, and the coil is used to receive the destruction instruction. It can be seen that the embodiments of the present invention provide a magnetic storage device and a data destruction method, wherein any destruction layer, through the field effect generated by the destruction device, changes the resistance state of the magnetic tunnel junction through the field effect, or breaks down any magnetic tunnel junction, or fuses the connection circuit corresponding to the magnetic tunnel junction, thereby destroying the data corresponding to the magnetic tunnel junction.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of magnetic storage, and in particular to a magnetic storage device and a method for destroying data therein. Background Art

[0002] Magnetic random access memory (MRAM) based on magnetic tunnel junction (MTJ) has excellent characteristics such as fast reading and writing and non-volatility and is expected to become the next generation of general-purpose memory.

[0003] In practical applications of MRAM, it has been found that due to its non-volatility, it continues to store data stored before powering off, posing a risk of data theft. To address this, physical destruction of the MRAM is currently a common method for destroying any remaining data. However, this physical destruction process can result in incomplete destruction of the MRAM. In such cases, the data in the MRAM may not be destroyed, leaving it at risk of being read. Summary of the Invention

[0004] An embodiment of the present invention provides a magnetic memory and a data destruction method thereof, so as to improve the problem that the physical destruction of the stored data in the MRAM itself is incomplete and there is a risk of data being read.

[0005] In order to solve the above problems, a first aspect of the present invention provides a magnetic memory, comprising:

[0006] at least one destruction layer connected by a control line, and a magnetic tunnel junction disposed above or below each corresponding destruction layer;

[0007] The at least one destruction layer receives a destruction instruction and transmits the destruction instruction to other destruction layers through the control line, so that all the destruction layers destroy the data corresponding to the magnetic storage by changing the resistance state of the corresponding magnetic tunnel junction through the field effect.

[0008] In some embodiments, the magnetic memory further comprises at least one connection circuit, wherein the at least one connection circuit is configured to energize each magnetic tunnel junction one by one;

[0009] The connection circuit corresponding to the magnetic tunnel junction is fused in response to the field effect of the corresponding destruction layer of the magnetic tunnel junction to change the resistance state of the magnetic tunnel junction.

[0010] In some embodiments, each of the magnetic tunnel junctions includes a free layer and a barrier layer,

[0011] For any magnetic tunnel junction, the barrier layer of the magnetic tunnel junction loses its isolation function in response to the field effect of the corresponding destruction layer of the magnetic tunnel junction, so as to change the resistance state of the magnetic tunnel junction;

[0012] For any magnetic tunnel junction, the method of destroying the magnetic tunnel junction or the read circuit includes:

[0013] The read circuit is fused to make the resistance state of the magnetic tunnel junction 0 or infinite, or to change the direction of the magnetic moment of the free layer.

[0014] In some embodiments, for any one of the at least one destruction layers, the destruction layer is provided with a destruction device, which is used to receive a destruction instruction and, in response to the destruction instruction, apply a field effect to the magnetic tunnel junction corresponding to the destruction layer or the reading circuit corresponding to the magnetic tunnel junction to change the resistance state of the magnetic tunnel junction so as to destroy the data corresponding to the magnetic tunnel junction.

[0015] In some embodiments, the field effect includes at least one of: an optical field, a magnetic field, an electric field, and a thermal field.

[0016] In some embodiments, the magnetic tunnel junction further includes a free layer, and the field effect mainly changes the resistance state of the magnetic tunnel junction by changing the direction of the magnetic moment of the free layer.

[0017] In some embodiments, the erasing and writing device includes at least one of the following: an optical field generator, a magnetic field generator, an electric field generator, and a thermal field generator.

[0018] In some embodiments, any destruction layer in the at least one destruction layer is implemented as a destruction device connected via a coil, and the coil is used to receive the destruction instruction.

[0019] In some embodiments, the magnetic tunnel junction film layer structure may be constructed by sputtering.

[0020] In another aspect of the present application, a data destruction method is also proposed.

[0021] Applicable to a magnetic memory, the magnetic memory comprising at least one destruction layer connected via a control line, and a magnetic tunnel junction corresponding to each destruction layer, the method comprising:

[0022] After receiving the destruction instruction, any one of the at least one destruction layer transmits the destruction instruction to the other destruction layers via the control line;

[0023] In response to the destruction instruction, each of the destruction layers generates a field effect on the corresponding magnetic tunnel junction;

[0024] Each of the magnetic tunnel junctions changes its resistance state in response to the field effect to destroy data corresponding to the magnetic tunnel junction.

[0025] In some embodiments, the magnetic memory further includes at least one connection circuit, the at least one connection circuit being configured to energize each magnetic tunnel junction one by one, wherein the magnetic tunnel junction changes its resistance state in response to the field effect, including:

[0026] The connection circuit corresponding to the magnetic tunnel is fused to make the resistance state of the magnetic tunnel junction 0 or infinite.

[0027] In some embodiments, the field effects include: optical field, magnetic field, electric field, and thermal field.

[0028] An embodiment of the present invention provides a magnetic storage device and a data destruction method, wherein a destruction layer or a destruction line is added below a magnetic tunnel junction provided in the magnetic storage device, and a field effect is generated by a destruction device provided in the destruction layer or the destruction line. Any one of the at least one destruction layer changes the resistance state of the corresponding magnetic tunnel junction through the field effect, or performs breakdown damage on any magnetic tunnel junction, or fuses the connection circuit corresponding to the magnetic tunnel junction, thereby destroying the data corresponding to all the magnetic tunnel junctions. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application.

[0030] Figure 1 This is a schematic diagram of a structure in which a destruction layer is arranged at the bottom of a magnetic tunnel junction according to one embodiment of the present application;

[0031] Figure 2 A schematic diagram of a field effect generated by a destruction device according to one embodiment of the present invention;

[0032] Figure 3 A schematic diagram of the arrangement of external destruction lines of a magnetic memory according to an embodiment of the present invention;

[0033] Figure 4 Schematic diagram of the arrangement of external destroy lines in a multi-device magnetic memory array according to one embodiment of the present invention. DETAILED DESCRIPTION

[0034] In order to make the purpose, features, and advantages of the invention of this application more obvious and easy to understand, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described implementation methods are only part of the embodiments of this application, not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts shall fall within the scope of protection of this application.

[0035] Those skilled in the art will understand that the terms "first" and "second" in this application are only used to distinguish different devices, modules or parameters, etc., and neither represent any specific technical meaning nor indicate the necessary logical order between them.

[0036] Magnetic random access memory (MRAM) based on magnetic tunnel junction (MTJ) has excellent characteristics such as fast reading and writing, low power consumption, long durability, and non-volatility, and is expected to become the next generation of general-purpose memory.

[0037] In practical applications of MRAM, it has been found that due to its non-volatility, it continues to store data stored before powering off, posing a risk of data theft. To address this, physical destruction of the MRAM is currently a common method for destroying any remaining data. However, this physical destruction process can result in incomplete destruction of the MRAM. In such cases, the data in the MRAM may not be destroyed, leaving it at risk of being read.

[0038] In one embodiment of the present application, a magnetic memory is proposed, such as Figure 1 As shown, the memory includes:

[0039] at least one destruction layer connected by a control line, a magnetic tunnel junction disposed above or below each corresponding destruction layer, Figure 1 The structure shown is that the destruction layer is disposed below the magnetic tunnel junction;

[0040] The at least one destruction layer receives a destruction instruction and transmits the destruction instruction to other destruction layers through the control line, so that all the destruction layers destroy the data corresponding to the magnetic storage by changing the resistance state of the corresponding magnetic tunnel junction through the field effect.

[0041] Optionally, the magnetic tunnel junction film layer structure includes: a spin coupling layer, a free layer, a barrier layer and a fixed layer.

[0042] Optional, such as Figure 2 As shown, for any one of the at least one destruction layers, the destruction layer is provided with a destruction device, which is used to receive a destruction instruction and, in response to the destruction instruction, apply a field effect to the magnetic tunnel junction corresponding to the destruction layer or the reading circuit corresponding to the magnetic tunnel junction to change the resistance state of the magnetic tunnel junction so as to destroy the data corresponding to the magnetic tunnel junction.

[0043] Optionally, the magnetic memory further comprises at least one connecting circuit, wherein the at least one connecting circuit is configured to energize each magnetic tunnel junction one by one;

[0044] For any magnetic tunnel junction, the connection circuit corresponding to the magnetic tunnel junction is fused in response to the field effect of the corresponding destruction layer of the magnetic tunnel junction to change the resistance state of the magnetic tunnel junction.

[0045] Optionally, each of the magnetic tunnel junctions includes a free layer and a barrier layer,

[0046] For any magnetic tunnel junction, the barrier layer of the magnetic tunnel junction loses its isolation function in response to the field effect of the corresponding destruction layer of the magnetic tunnel junction, so as to change the resistance state of the magnetic tunnel junction;

[0047] For any magnetic tunnel junction, the method of destroying the magnetic tunnel junction or the read circuit includes:

[0048] The read circuit is fused to make the resistance state of the magnetic tunnel junction 0 or infinite, or to change the direction of the magnetic moment of the free layer.

[0049] Optionally, for any one of the at least one destruction layers, the destruction layer is provided with a destruction device, which is used to receive a destruction instruction and, in response to the destruction instruction, apply a field effect to the magnetic tunnel junction corresponding to the destruction layer or the reading circuit corresponding to the magnetic tunnel junction to change the resistance state of the magnetic tunnel junction so as to destroy the data corresponding to the magnetic tunnel junction.

[0050] Optionally, the destruction device may be arranged in at least one of the following modes: arranged on the surface of the destruction layer, embedded in the destruction layer, and integrated into the interior of the destruction layer.

[0051] Optionally, the field effect includes at least one of the following: optical field, magnetic field, electric field and thermal field.

[0052] Optionally, the field effect mainly changes the resistance state of the magnetic tunnel junction by changing the direction of the magnetic moment of the free layer.

[0053] Optionally, the destruction device includes at least one of the following: a light field generator, a magnetic field generator, an electric field generator, and a thermal field generator.

[0054] Optionally, when the destruction device uses an electric field generator, when the destruction device receives a destruction instruction input by a customer, the destruction device starts and generates a regulating magnetic field on the free layer;

[0055] The field is used to adjust the direction of the magnetic moment of the free layer, and after adjustment, the direction of the magnetic moment of the free layer is opposite to the original direction;

[0056] In response to a change in the direction of the free layer magnetic moment, the resistance state of the magnetic tunnel junction changes, and the change in the resistance state of the magnetic tunnel junction includes at least one of the following: a change from a high resistance state to a low resistance state, or a change from a low resistance state to a low resistance state;

[0057] Obviously, if the "high resistance state" of the magnetic tunnel junction is recorded as "1" and the "low resistance state" of the magnetic tunnel junction is recorded as "0", the change in the resistance state of the magnetic tunnel junction caused by the change in the direction of the free layer magnetic moment is actually the change in the stored data caused by the change in the free layer magnetic moment.

[0058] Optionally, the reset device is further configured to identify a destruction instruction, and if the data indicated by the destruction instruction is stored in a magnetic storage device corresponding to the destruction device, execute a destruction operation on the corresponding data;

[0059] Typically, in a multi-device memory usage scenario, such as a memory array, a user needs to erase or write data in a memory within a specific memory area in the memory array. The reset device can perform a specific reset action in the memory array according to the need.

[0060] Optional, such as Figure 3 As shown, the structure of the memory further includes a destroy line (destroy sub-line or destroy bit line), which is used to reset the stored data by changing the resistance state of the magnetic tunnel junction. The destroy line is a line-type structure and can be set at the same place as the write word line or the read bit line. The destroy line can replace the destroy layer.

[0061] Each of the destruction lines is connected to at least one destruction device, and each of the destruction devices corresponds to at least one of the magnetic tunnel junctions.

[0062] The destruction device is used to receive a destruction instruction input by a user, and in response to the destruction instruction, apply a field effect to the magnetic tunnel junction to change the resistance state of the magnetic tunnel junction;

[0063] The destruction device includes at least one of the following: a light field generator, a magnetic field generator, an electric field generator, and a thermal field generator.

[0064] Optional, such as Figure 4 As shown, in a multi-device memory usage scenario, such as a memory array, the destroy line can respond to adjacent memories after receiving a destroy instruction required by the user;

[0065] The destruction device provided on the destruction line receives the destruction instruction required by the user,

[0066] In response to the destruction instruction, the destruction line generates a field effect on the destruction device at the location where the destruction instruction needs to be executed.

[0067] The field effect changes the resistance state of the magnetic tunnel junction at a position corresponding to the destruction device, so as to change the storage data of the magnetic tunnel junction.

[0068] In another embodiment of the present application, a data destruction method is also proposed.

[0069] Applicable to a magnetic memory, the magnetic memory comprising at least one destruction layer connected via a control line, and a magnetic tunnel junction corresponding to each destruction layer, the method comprising:

[0070] After receiving the destruction instruction, any one of the at least one destruction layer transmits the destruction instruction to the other destruction layers via the control line;

[0071] In response to the destruction instruction, each of the destruction layers generates a field effect on the corresponding magnetic tunnel junction;

[0072] Each of the magnetic tunnel junctions changes its resistance state in response to the field effect to destroy data corresponding to the magnetic tunnel junction.

[0073] Optionally, the magnetic memory further includes at least one connecting circuit, the at least one connecting circuit being configured to energize each magnetic tunnel junction one by one, the magnetic tunnel junction changing its resistance state in response to the field effect, including:

[0074] The connection circuit corresponding to the magnetic tunnel is fused to make the resistance state of the magnetic tunnel junction 0 or infinite.

[0075] Optionally, the field effect includes: light field, magnetic field, electric field and thermal field.

[0076] Optionally, the magnetic tunnel junction film layer structure may be constructed by sputtering.

[0077] Optionally, the sputtering process for growing the tunneling magnetic tunnel junction film layer includes but is not limited to two-stage sputtering, three-stage sputtering or four-stage sputtering, magnetron sputtering, target sputtering, RF sputtering, bias sputtering, asymmetric AC RF sputtering, ion beam sputtering and reactive sputtering, etc.

[0078] An embodiment of the present invention provides a magnetic storage device and a data destruction method, wherein a destruction layer or a destruction line is added below a magnetic tunnel junction provided in the magnetic storage device, and a field effect is generated by a destruction device provided in the destruction layer or the destruction line. Any one of the at least one destruction layer changes the resistance state of the corresponding magnetic tunnel junction through the field effect, or performs breakdown damage on any magnetic tunnel junction, or fuses the connection circuit corresponding to the magnetic tunnel junction, thereby destroying the data corresponding to all the magnetic tunnel junctions.

[0079] The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A magnetic memory, characterized in that: The magnetic memory comprises: at least one destruction layer connected by a control line, and a magnetic tunnel junction disposed above or below each corresponding destruction layer; At least one of the destruction layers receives a destruction instruction and transmits the destruction instruction to other destruction layers through the control line, so that all the destruction layers cause the corresponding magnetic tunnel junctions to be completely broken down or completely fused through the field effect, thereby destroying the data corresponding to the magnetic storage.

2. The magnetic memory according to claim 1, wherein The magnetic memory further comprises at least one connecting circuit, wherein the at least one connecting circuit is configured to energize each magnetic tunnel junction one by one; The connection circuit corresponding to each magnetic tunnel junction is fused in response to the field effect of the corresponding destruction layer of the magnetic tunnel junction to change the resistance state of the magnetic tunnel junction.

3. The magnetic memory according to claim 1, wherein Each of the magnetic tunnel junctions includes a free layer and a barrier layer, For any magnetic tunnel junction, the barrier layer of the magnetic tunnel junction loses its isolation function in response to the field effect of the corresponding destruction layer of the magnetic tunnel junction, so as to change the resistance state of the magnetic tunnel junction; For any magnetic tunnel junction, the method of destroying the magnetic tunnel junction or the reading circuit where the magnetic tunnel junction is located includes: The read circuit is fused to make the resistance state of the magnetic tunnel junction 0 or infinite.

4. The magnetic memory according to claim 2, wherein: For any one of the at least one destruction layers, the destruction layer is provided with a destruction device, which is used to receive a destruction instruction and, in response to the destruction instruction, apply a field effect to the magnetic tunnel junction corresponding to the destruction layer or the reading circuit corresponding to the magnetic tunnel junction to change the resistance state of the magnetic tunnel junction so as to destroy the data corresponding to the magnetic tunnel junction.

5. The magnetic memory according to claim 1, wherein The field effect includes at least one of the following: optical field, magnetic field, electric field and thermal field.

6. The magnetic memory according to claim 4, wherein: The destruction device includes at least one of the following: a light field generator, a magnetic field generator, an electric field generator, and a thermal field generator.

7. The magnetic memory according to claim 1, wherein Any destruction layer in the at least one destruction layer is implemented as a destruction device connected via a coil, and the coil is used to receive the destruction instruction.

8. A data destruction method, characterized in that: Applicable to a magnetic memory, the magnetic memory comprising at least one destruction layer connected via a control line, and a magnetic tunnel junction corresponding to each destruction layer, the method comprising: After receiving the destruction instruction, any one of the at least one destruction layer transmits the destruction instruction to the other destruction layers via the control line; In response to the destruction instruction, each of the destruction layers generates a field effect on the corresponding magnetic tunnel junction; Each of the magnetic tunnel junctions is broken down or melted in response to the field effect, so as to destroy the data corresponding to the magnetic tunnel junction.

9. The data destruction method according to claim 8, characterized in that: The magnetic memory further includes at least one connecting circuit, the at least one connecting circuit being configured to energize each magnetic tunnel junction one by one, wherein the magnetic tunnel junction changes its resistance state in response to the field effect, including: The connection circuit corresponding to the magnetic tunnel is fused to make the resistance state of the magnetic tunnel junction 0 or infinite.

10. The data destruction method according to claim 8, wherein: The field effects include: optical field, magnetic field, electric field and thermal field.

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