Transistor substrate and method of manufacturing the same

Abstract

A transistor substrate capable of pursuing low cost of a sensor device using an organic light-receiving element and a manufacturing method thereof. According to one embodiment, the transistor substrate has a substrate, a light source mounted on the substrate, a sensor element mounted on the substrate, the sensor element having a pixel electrode, a switching element electrically connected to the pixel electrode, a common electrode facing the pixel electrode, an organic light-receiving element layer provided between the pixel electrode and the common electrode, and the light source and the organic light-receiving element layer are provided in the same layer.

Description

[0001] This invention is based on Japanese Patent Application 2020-194461 (filed on November 24, 2020), and enjoys the benefits of priority of that application. This application incorporates the entire contents of that application by reference. Technical Field

[0002] Embodiments of the present invention relate to transistor substrates and methods for manufacturing the same. Background Technology

[0003] In recent years, sensor devices using organic photodetectors (OPD) have become increasingly popular. Among such sensor devices, it is known to have a configuration in which the sensor element equipped with the organic photodetector and the light source necessary for sensing data using the sensor element are mounted on different substrates. Summary of the Invention

[0004] One of the objectives of this disclosure is to provide a transistor substrate and a method for manufacturing the same, which enable cost reduction of sensor devices using organic photosensitive elements.

[0005] According to one embodiment, a transistor substrate includes a substrate, a light source mounted on the substrate, and a sensor element mounted on the substrate. The sensor element has a pixel electrode, a switching element electrically connected to the pixel electrode, a common electrode opposite to the pixel electrode, and an organic light-receiving element layer disposed between the pixel electrode and the common electrode. The light source and the organic light-receiving element layer are disposed on the same layer.

[0006] According to one embodiment, a method for manufacturing a transistor substrate includes the following steps: a first step of mounting a light source on a substrate; and a second step of mounting a sensor element on the substrate, wherein the sensor element includes: a pixel electrode, a switching element electrically connected to the pixel electrode, a common electrode opposite to the pixel electrode, and an organic light-receiving element layer disposed between the pixel electrode and the common electrode, and the organic light-receiving element layer and the light source are disposed on the same layer. Attached Figure Description

[0007] Figure 1 This is a plan view showing an example of the configuration of a transistor substrate according to one embodiment.

[0008] Figure 2 It means to use Figure 1 The cross-sectional view shown is a section cut by line A-B.

[0009] Figure 3 This is a diagram illustrating the stacked structure of the organic light-receiving element layer in this embodiment.

[0010] Figure 4 This is a diagram illustrating another layered structure of the organic light-receiving element layer in this embodiment.

[0011] Figure 5 This is a plan view showing another configuration example of the transistor substrate of this embodiment.

[0012] Figure 6 This is a cross-sectional view showing another configuration example of the transistor substrate of this embodiment.

[0013] Figure 7 This is a plan view showing another configuration example of the transistor substrate of this embodiment.

[0014] Figure 8 This is a cross-sectional view showing another configuration example of the transistor substrate of this embodiment.

[0015] Figure 9 This is a plan view showing another configuration example of the transistor substrate of this embodiment.

[0016] Figure 10 This is a plan view showing an example of the arrangement layout of the light source on the transistor substrate of this embodiment.

[0017] Figure 11 This is a diagram used to illustrate the dummy sensor element arranged on the transistor substrate of this embodiment. Detailed Implementation

[0018] While referring to the appendix Figure 1 Several implementation methods will be described below.

[0019] Furthermore, the disclosure is merely one example, and suitable modifications that can be readily conceived by those skilled in the art while maintaining the spirit of the invention are of course included within the scope of this invention. Also, the drawings sometimes illustrate the invention schematically compared to the embodiments for the purpose of making the description clearer, but this is merely an example and does not limit the interpretation of the invention. Furthermore, in this specification and the figures, sometimes the same reference numerals are given to components that perform the same or similar functions as those described with respect to previously presented figures, and repeated detailed descriptions are omitted.

[0020] Figure 1 This is a plan view illustrating a configuration example of a transistor substrate TR according to one embodiment. The transistor substrate TR of this embodiment is used as a sensor device for measuring / detecting various biological data, such as finger veins, transcutaneous arterial oxygen saturation (SpO2), heart rate, blood pressure pulse wave, and body fat percentage.

[0021] like Figure 1As shown, the transistor substrate TR of the present embodiment has the sensor elements SE and the light sources LED arranged in an array along the first direction X and the second direction Y. The light sources LED of the present embodiment are micro-LEDs as self-emitting elements. As the micro-LEDs, micro-LEDs that emit infrared rays or green micro-LEDs can be used. For example, hemoglobin in an artery has a property of easily absorbing green light, and therefore, in a case where the transistor substrate TR is used in a sensor device for measuring / detecting a heart rate, green micro-LEDs are used for the light sources LED mounted on the transistor substrate TR.

[0022] As shown in FIG. 1, the transistor substrate TR has a plurality of scan lines GL extending along the first direction X and arranged at intervals in the second direction Y and a plurality of signal lines SL extending along the second direction Y and arranged at intervals in the first direction X. The sensor elements SE and the light sources LED are arranged in pixel regions divided by the plurality of scan lines GL and the plurality of signal lines SL. Details thereof will be described later together with the description of FIG. 2. Figure 2 As shown in FIG. 1, the transistor substrate TR has a plurality of scan lines GL extending along the first direction X and arranged at intervals in the second direction Y and a plurality of signal lines SL extending along the second direction Y and arranged at intervals in the first direction X. The sensor elements SE and the light sources LED are arranged in pixel regions divided by the plurality of scan lines GL and the plurality of signal lines SL. Details thereof will be described later together with the description of FIG. 2. Figure 1 As shown in FIG. 1, the transistor substrate TR has a plurality of scan lines GL extending along the first direction X and arranged at intervals in the second direction Y and a plurality of signal lines SL extending along the second direction Y and arranged at intervals in the first direction X. The sensor elements SE and the light sources LED are arranged in pixel regions divided by the plurality of scan lines GL and the plurality of signal lines SL. Details thereof will be described later together with the description of FIG. 2.

[0023] The switching element SW is constituted by, for example, a thin film transistor (TFT) and is electrically connected to the scan line GL and the signal line SL. The scan line GL is electrically connected to the switching element SW of each of the sensor elements SE arranged in the first direction X. The signal line SL is electrically connected to the switching element SW of each of the sensor elements SE arranged in the second direction Y. Each of the pixel electrodes PE is connected to the switching element SW through the contact hole CH1. Each of the pixel electrodes PE faces the common electrode CE. The organic photodetector layer OPD is sandwiched by each of the pixel electrodes PE and the common electrode CE. The organic photodetector layer OPD generates pairs of holes and electrons when receiving light. Current flows through the pairs of holes and electrons generated by the organic photodetector layer OPD, and an electric signal corresponding to the intensity of the current is read out through the signal line SL, whereby various biological data are measured and detected.

[0024] The light source LED is electrically connected to the lower electrode UE by the conductive member SO such as solder. The lower electrode UE is connected to the power supply wiring PL through the contact hole CH2. The power supply wiring PL extends along the second direction Y like the signal line SL. The power supply wiring PL has a prescribed line width W1 along the first direction X in a region where the light source LED is mounted and has a line width W2 thinner than the prescribed line width W1 described above in a region other than the region. Thus, it is possible to suppress a case where a step occurs due to the presence or absence of the power supply wiring PL in a region where the light source LED is mounted.

[0025] in addition, Figure 2 The example illustrates a configuration of one light source LED and eight sensor elements SE in a 3×3 pixel area, but the arrangement of the light source LED and sensor elements SE is not limited to this. For example, the number of light source LEDs can be determined based on the required amount of light.

[0026] Furthermore, the transistor substrate TR of this embodiment is used in a sensor device for measuring / detecting various biological data as described above. It does not require displaying images, so the light source LED provided on the transistor substrate TR does not need to output analog grayscale. The light source LED can be directly connected to the power supply wiring PL (via the connecting conductive component SO and the lower electrode UE).

[0027] Furthermore, in the transistor substrate TR of this embodiment, sensor elements SE cannot be arranged in the pixel area where light source LEDs are arranged, so sensing data cannot be obtained from the pixel area. However, the central value of the sensing data obtained by the eight sensor elements SE located around it can be calculated and used as the sensing data of the pixel area.

[0028] Figure 1 It means to use Figure 2 The cross-sectional view of the transistor substrate TR after the A-B line is cut is shown.

[0029] Figure 2 The transistor substrate TR shown includes an insulating substrate 11. The material of the insulating substrate 11 is not particularly limited, as long as it can withstand the processing temperature in the TFT process, but glass substrates such as quartz or alkali-free glass, or resin substrates such as polyimide, can be used primarily. The resin substrate is flexible and can form a sheet-like transistor substrate TR. Furthermore, the resin substrate is not limited to polyimide; other resin materials can also be used.

[0030] An insulating substrate 11 has a three-layer stacked base coating 12. Detailed illustrations are omitted, but the base coating 12 has a bottom layer formed of silicon oxide (SiO2), a middle layer formed of silicon nitride (SiN), and a top layer formed of silicon oxide (SiO2). The bottom layer is provided to improve adhesion to the insulating substrate 11, which serves as the substrate. The middle layer is provided as a barrier film against external moisture and impurities. The top layer is provided as a barrier film to prevent hydrogen atoms contained in the middle layer from diffusing to the semiconductor layer SC side, which will be described later.

[0031] Furthermore, the base coating 12 is not limited to this structure. The base coating 12 may also be multilayered, and may be a single-layer or two-layer structure. For example, when the insulating substrate 11 is a glass substrate, the silicon nitride film has good adhesion, so the silicon nitride film can be formed directly on the insulating substrate 11.

[0032] An optical black film 13 is provided on the insulating substrate 11. The position of the optical black film 13 coincides with a place where a TFT is formed later. The optical black film 13 can be formed of a material having a light-shielding property such as a metal material or a black material. According to such an optical black film 13, the invasion of light into the back surface of the channel of the TFT can be suppressed, and thus the change in the characteristics of the TFT caused by light that can be incident from the side of the insulating substrate 11 can be suppressed. In addition, in the case where the optical black film 13 is formed of a conductive material, the back gate effect can be imparted to the TFT by imparting a prescribed potential to the optical black film 13.

[0033] A TFT is formed on the primer layer 12. As the TFT, a polysilicon TFT using polysilicon in a semiconductor layer SC is exemplified. However, the semiconductor layer SC is not limited to polysilicon, and can be an oxide semiconductor or amorphous silicon. In the present embodiment, the semiconductor layer SC is formed using low-temperature polysilicon. The TFT can use either of an Nch TFT and a Pch TFT. Also, the Nch TFT and the Pch TFT can be formed simultaneously. Hereinafter, a case where the Nch TFT is used as the TFT is described.

[0034] The semiconductor layer SC of the Nch TFT has a first region, a second region, a channel region between the first region and the second region, and low-concentration impurity regions respectively provided between the channel region and the first region and between the channel region and the second region. One of the first region and the second region functions as a source region, and the other functions as a drain region.

[0035] The gate insulating film GI uses a silicon oxide film, and the gate electrode GE is formed of MoW (molybdenum tungsten). In addition, the gate electrode GE has a function as a holding capacitor electrode described later in addition to a function as a gate electrode of the TFT. Here, a top gate type TFT is exemplified, but the TFT can be a bottom gate type TFT.

[0036] A passivation layer 14 is provided on the gate insulating film GI and the gate electrode GE. The passivation layer 14 is configured by, for example, sequentially stacking a silicon nitride film and a silicon oxide film on the gate insulating film GI and the gate electrode GE.

[0037] A first electrode E1 and a second electrode E2 of the TFT are provided on the passivation layer 14. Also, a power supply wiring PL is provided on the passivation layer 14. The first electrode E1, the second electrode E2, and the power supply wiring PL each adopt a three-layer stacked structure (Ti-based / Al-based / Ti-based), and have a lowermost layer composed of a metal material in which Ti (titanium), an alloy containing Ti, or the like is a main component, an intermediate layer composed of a metal material in which Al (aluminum), an alloy containing Al, or the like is a main component, and an uppermost layer composed of a metal material in which Ti, an alloy containing Ti, or the like is a main component.

[0038] The first electrode El is connected to the first region of the semiconductor layer SC, and the second electrode E2 is connected to the second region of the semiconductor layer SC. For example, in the case where the first region of the semiconductor layer SC functions as a drain region, the first electrode El is a drain electrode, and the second electrode E2 is a source electrode. The first electrode El forms a holding capacitor together with the passivation layer 14 and the gate electrode GE (holding capacitor electrode) of the TFT. The first electrode El is applied with a reference voltage.

[0039] A planarization film 15 is provided on the passivation layer 14, the first electrode El, the second electrode E2, and the power supply wiring PL. The planarization film 15 is removed in regions where the pixel electrode PE of the sensor element SE and the TFT are in contact, and regions where the lower electrode UE of the light source LED and the power supply wiring PL are in contact, and has openings (contact holes CH1 and CH2). As the planarization film 15, an organic insulating material such as a photosensitive acrylic is used. The planarization film 15 has excellent coverage of wiring steps and surface flatness compared to an inorganic insulating material formed by CVD or the like.

[0040] In the sensor element SE, a pixel electrode PE is provided on the planarization film 15. The pixel electrode PE is connected to the first electrode El through the contact hole CH1 formed in the planarization film 15. In the light source LED, a lower electrode UE is provided on the planarization film 15. The lower electrode UE is connected to the power supply wiring PL through the contact hole CH2 formed in the planarization film 15.

[0041] The planarization film 15, the pixel electrode PE, and the lower electrode UE are covered by an inorganic insulating film 16. The inorganic insulating film 16 is removed in regions where the organic photoreceptive element layer OPD and the pixel electrode PE are in contact, and regions where the connection conductive member SO and the lower electrode UE are in contact, and has openings. The inorganic insulating film 16 is formed of, for example, a silicon nitride film.

[0042] The pixel electrode PE and the inorganic insulating film 16 are covered by the organic photoreceptive element layer OPD formed of a plurality of layers. In the sensor element SE, the pixel electrode PE is in contact with the organic photoreceptive element layer OPD at the openings formed in the inorganic insulating film 16. Further, on the lower electrode UE and at the openings formed in the inorganic insulating film 16, a connection conductive member SO is provided. The light source LED is provided on the connection conductive member SO. Details will be described later, but it is desirable that the light source LED is a light source that emits light only in the upward direction and does not emit light in the lateral direction.

[0043] In addition, since the organic photoreceptive element layer OPD cannot withstand a high-temperature process, it is desirable that the organic photoreceptive element layer OPD is formed after the light source LED is mounted. At this time, the organic photoreceptive element layer OPD exposes the upper surface (emission surface) of the light source LED.

[0044] A common electrode CE is provided so as to cover the organic light-receiving element layer OPD and the light source LED. With respect to the sensor element SE, the common electrode CE is provided as an electrode that opposes the pixel electrode PE. With respect to the light source LED, the common electrode CE is provided as an upper electrode that opposes the lower electrode UE.

[0045] In Figure 3 The power supply wiring for supplying power to the common electrode CE is provided, for example, in the same layer as the first electrode E1, the second electrode E2, and the power supply wiring PL. The power supply wiring can be provided in multiple numbers per pixel region, or can be provided in only one number that is shared in the entire pixel region. However, in the case where the power supply wiring is provided in only one number that is shared in the entire pixel region, the farther the pixel region is from the power supply wiring, the smaller the voltage applied becomes due to the voltage drop based on the resistance of the common electrode CE. Therefore, it is desirable that the power supply wiring for supplying power to the common electrode CE be provided per pixel region, in which case low resistance can be sought compared to the case where it is shared in the entire pixel region.

[0046] The common electrode CE needs to be formed as a transparent electrode in order to extract the emergent light from the light source LED. The common electrode CE is formed using, for example, ITO as a transparent conductive material.

[0047] A sealing layer 17 is provided on the common electrode CE. The sealing layer 17 is provided in order to suppress the intrusion of moisture from the outside into the organic light-receiving element layer OPD. The sealing layer 17 is a laminated structure of an organic insulating film 18 and a pair of inorganic insulating films 19 that sandwich the organic insulating film 18. On the sealing layer 17, a resin layer 20 that functions as a protective film is provided.

[0048] The transistor substrate TR described above can be manufactured by, for example, the following manufacturing method. Here, only the main processes in the manufacturing method of the transistor substrate TR will be described.

[0049] First, in the pixel region in which the sensor element SE is arranged, a light-shielding film 13 is formed on the insulating substrate 11. Thereafter, a primer layer 12 is formed so as to cover the insulating substrate 11 and the light-shielding film 13. Next, in the pixel region in which the sensor element SE is arranged, a TFT is formed on the primer layer 12. The TFT overlaps the light-shielding film 13 in plan view. Also, in the pixel region in which the light source LED is arranged, a power supply wiring PL is formed in the same layer as the above-described TFT. Next, a planarization film 15 is formed so as to cover the TFT and the power supply wiring PL.

[0050] A contact hole CH1 is formed in the pixel region in which the sensor element SE is disposed in the planarization film 15, that is, the region in which the TFT and the pixel electrode PE are in contact. Also, a contact hole CH2 is formed in the pixel region in which the light source LED is disposed in the planarization film 15, that is, the region in which the power supply wiring PL and the lower electrode UE are in contact. Subsequently, the pixel electrode PE and the lower electrode UE are formed on the planarization film 15. The pixel electrode PE is connected to the TFT through the contact hole CH1, and the lower electrode UE is connected to the power supply wiring PL through the contact hole CH2.

[0051] Next, an inorganic insulating film 16 is formed so as to cover the pixel electrode PE, the lower electrode UE, and the planarization film 15. An opening is provided in the pixel region in which the sensor element SE is disposed in the inorganic insulating film 16, that is, the region in which the pixel electrode PE and the organic light-receiving element layer OPD are in contact. Also, an opening is formed in the pixel region in which the light source LED is disposed in the inorganic insulating film 16, that is, the mounting region of the light source LED. In the mounting region of the light source LED, the light source LED is mounted by connecting a conductive member SO such as solder. The light source LED is electrically connected to the lower electrode UE and the power supply wiring PL via the connecting conductive member SO.

[0052] After the light source LED is mounted, the organic light-receiving element layer OPD is formed on the pixel electrode PE and the inorganic insulating film 16. At this time, the organic light-receiving element layer OPD is formed so as to expose the exit surface of the light source LED. Next, the common electrode CE is formed on the organic light-receiving element layer OPD and the light source LED. Thereafter, the sealing film 17 and the protective film 20 are formed on the common electrode CE, and the transistor substrate TR is manufactured.

[0053] Here, an example of the layer stack configuration of the organic light-receiving element layer OPD composed of a plurality of layers will be described.

[0054] Figure 3 is a view for explaining an example of the layer stack configuration of the organic light-receiving element layer OPD. Figure 3 The layer stack configuration of is a layer stack configuration in a case where the pixel electrode PE functions as a cathode and the common electrode CE functions as an anode in the sensor element SE. In this case, as shown in Figure 4 , the electron transport layer ETL, the active layer AL, and the hole transport layer HTL are stacked in this order. The electron transport layer ETL is in contact with the pixel electrode PE at the opening formed by the inorganic insulating film 16. The active layer AL generates pairs of electrons and holes by charge separation when receiving light. The generated electrons are transported through the electron transport layer ETL. The generated holes are transported through the hole transport layer HTL.

[0055] Figure 4is a drawing for explaining another example of the stacked structure of the organic light-receiving element layer OPD. Figure 4 The stacked structure of the organic light-receiving element layer OPD is a stacked structure in a case where the pixel electrode PE functions as an anode and the common electrode CE functions as a cathode in the sensor element SE. In this case, as shown in Figure 5 the hole-transporting layer HTL, the active layer AL, and the electron-transporting layer ETL are stacked in this order. The hole-transporting layer HTL is in contact with the pixel electrode PE at the opening formed by the inorganic insulating film 16. The active layer AL generates a pair of an electron and a hole by charge separation when receiving light. The generated electron is transported through the electron-transporting layer ETL. The generated hole is transported through the hole-transporting layer HTL.

[0056] In addition, whether the pixel electrode PE and the common electrode CE function as an anode or a cathode in the sensor element SE can be appropriately selected by applying what kind of voltage to the common electrode CE with respect to the reference voltage applied to the pixel electrode PE via the first electrode E1.

[0057] As explained above, the transistor substrate TR of one embodiment includes the sensor element SE that generates a current by receiving light and detects / counts various kinds of biological data by reading out an electric signal corresponding to the intensity of the current, and the light source LED that emits light necessary for sensing by the sensor element SE. Thus, the organic light-receiving element layer OPD that constitutes the sensor element SE can function as a planarization film necessary when the light source LED is mounted.

[0058] Further, by the organic light-receiving element layer OPD functioning as a planarization film necessary when the light source LED is mounted, an electrode provided on the upper surface of the organic light-receiving element layer OPD and an electrode provided on the upper surface of the light source LED can be shared. Thus, various kinds of components can be shared, so that the transistor substrate TR can be reduced in cost, and further, a sensor device using the organic light-receiving element can be reduced in cost.

[0059] In addition, in order to detect / measure various kinds of biological data, the sensor element SE needs to receive light reflected by an object to be detected, and biological data of the object to be detected cannot be measured / detected even if light from the light source LED directly enters. Further, if light from the light source LED directly enters the sensor element SE, unexpected current might flow to the transistor substrate TR, and the transistor substrate TR might malfunction. Thus, the transistor substrate TR of one embodiment is provided with the light source LED of a type that emits light only in the upward direction, and the sensor element SE and the light source LED are insulated by the inorganic insulating film 16, but the components of the transistor substrate TR are not limited thereto.

[0060] For example, it can also be configured as shown in Figure 6 and Figure 5 by providing a black material BM outside the light-receiving surface of the sensor element SE and the exit surface of the light source LED, so as to suppress direct light from the light source LED to the sensor element SE, and maintain the insulation between the sensor element SE and the light source LED. In this configuration, as shown in Figure 6 and Figure 7 the black material BM is provided in a lattice shape and is provided throughout the pixel area in a manner to cover the inorganic insulating film 16, the contact holes CH1 and CH2.

[0061] Alternatively, it can also be configured as shown in Figure 8 and Figure 7 by providing a black material BM only around the light source LED, so as to suppress direct light from the light source LED to the sensor element SE, and maintain the insulation between the sensor element SE and the light source LED. In this configuration, as shown in Figure 8 and Figures 5 to 8 the black material BM is provided in the pixel area where the light source LED is arranged in a manner to cover the inorganic insulating film 16.

[0062] Even in the configuration shown in Figures 5 to 8 the transistor substrate TR has both the sensor element SE and the light source LED on the same substrate. Moreover, it does not change the fact that the organic light-receiving element layer OPD can be used as a planarization film required when installing the light source LED, and the electrodes provided on the upper surface of the organic light-receiving element layer OPD and the electrodes provided on the upper surface of the light source LED are shared. Therefore, even in the configuration shown in Figure 9 the low cost of the transistor substrate TR can be pursued.

[0063] In the above-described embodiment, it is assumed that the light source LED has electrodes (lower electrodes UE and common electrodes CE) to which a power supply voltage is applied on the upper surface and the lower surface, but the light source LED can use a so-called flip-chip type light source LED having two electrodes UE1 and UE2 to which a power supply voltage is applied on the lower surface. Figure 9 is a plan view of a configuration in which the flip-chip type light source LED has two electrodes UE1 and UE2 to which a power supply voltage is applied on the lower surface.

[0064] In this case, as shown in Figure 10As shown, the light source LED has two electrodes UE1 and UE2 on its lower surface. These two lower electrodes UE1 and UE2 are respectively connected to two power supply lines PL1 and PL2 extending along the scan line GL in the first direction X. For example, power supply line PL1 is either an anode power supply line or a cathode power supply line, and power supply line PL2 is either a cathode power supply line or an anode power supply line. Even with this configuration, the transistor substrate TR has both the sensor element SE and the light source LED on the same substrate. Furthermore, the organic light-receiving element layer OPD remains unchanged in that it also serves as the planarization film required for mounting the light source LED, thus enabling cost reduction of the transistor substrate TR.

[0065] Figure 10 This is a plan view showing an example of the configuration layout of a number of light source LEDs disposed on a transistor substrate TR. Figure 10 (a) shows a configuration layout in which many light source LEDs are arranged in a square. Additionally, in Figure 10 (a) envisions a scenario where a light source LED is configured in a 3×3 pixel area. Figure 10 The configuration shown in (a) is primarily effective for situations requiring a high amount of light source and a large number of LEDs. On the other hand, in Figure 10 (b) shows a configuration layout in which a number of light source LEDs are arranged in a hexagonal (staggered) configuration. Figure 10 The configuration shown in (b) is primarily effective for situations requiring a low amount of light source and a small number of LEDs. Additionally, in Figure 11 In the configuration shown in (b), it is preferable to adopt a configuration in which the shape of the pixels with LEDs connected is close to an equilateral triangle and close to the densest filling configuration. However, the spacing between the pixels with LEDs in the first direction X and the spacing between the pixels in the second direction Y may not be equal.

[0066] Figure 11 This diagram illustrates a dummy sensor element (DSE) disposed on a transistor substrate TR. A dummy sensor element (DSE) is a portion of a pixel region where a sensor element (SE) is disposed, but does not function as a sensor element (SE). A dummy sensor element (DSE) is formed by disposing a black material (BM) only in place of the organic light-receiving element layer (OPD) in that pixel region, for example. Alternatively, a dummy sensor element (DSE) is formed by not electrically connecting the switching element (SW) to the pixel electrode (PE) only in that pixel region.

[0067] By forming a dummy sensor element (DSE), the detection intensity in the region where the dummy sensor element (DSE) is formed and the region where the dummy sensor element (DSE) is not formed can be adjusted by varying degrees. For example, ​As shown, in a case where a 3x3 pixel region is set as one detection region, it is possible to make the detection intensity of the detection region in which the dummy sensor element DSE is formed relatively low compared to the detection intensity of the detection region in which the dummy sensor element DSE is not formed.

[0068] According to the embodiment described above, a transistor substrate in which a low cost of a sensor device using an organic light-receiving element can be achieved and a manufacturing method thereof can be provided.

[0069] While several embodiments of the present application have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the application. The novel embodiments can be implemented in other various forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the application. These embodiments and their modifications encompassed within the scope and spirit of the application and the scope of the application as set forth in the claims and their equivalents.

Claims

1. A transistor substrate comprising: a substrate; a light source mounted on the substrate; and a sensor element mounted on the substrate, the sensor element having a pixel electrode, a switching element electrically connected to the pixel electrode, a common electrode opposed to the pixel electrode, and an organic light-receiving element layer provided between the pixel electrode and the common electrode, the light source and the organic light-receiving element layer being provided in the same layer, the light source being electrically connected to an upper electrode provided on an exit surface of light and a lower electrode provided on a lower surface opposite to the exit surface, the upper electrode being the common electrode, a power supply wiring electrically connected to the lower electrode having a first line width in a region overlapping the lower electrode in plan view, and the power supply wiring electrically connected to the lower electrode having a second line width thinner than the first line width in a region not overlapping the lower electrode in plan view.

2. The transistor substrate according to claim 1, the switching element being electrically connected to a scan line extending in a first direction and a signal line extending in a second direction intersecting the first direction, the light source and the sensor element being arranged in a pixel region divided by the scan line and the signal line.

3. The transistor substrate according to claim 2, a power supply wiring electrically connected to the common electrode being provided for each of the pixel regions.

4. The transistor substrate according to claim 1, in the case where the pixel electrode functions as a cathode and the common electrode functions as an anode with respect to the sensor element, the organic light-receiving element layer has a stacked structure in which an electron transport layer, an active layer, and a hole transport layer are stacked in this order.

5. The transistor substrate according to claim 1, in the case where the pixel electrode functions as an anode and the common electrode functions as a cathode with respect to the sensor element, the organic light-receiving element layer has a stacked structure in which a hole transport layer, an active layer, and an electron transport layer are stacked in this order.

6. The transistor substrate according to claim 1, a black material being provided in a region other than a region in which a light-receiving surface of the sensor element overlaps an exit surface of the light source in plan view.

7. The transistor substrate according to claim 1, a black material being provided so as to surround a periphery of the light source in the transistor substrate. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​

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