Display panel and manufacturing method thereof

Abstract

The display panel and its manufacturing method provided by the technical solution of the present application include: providing a substrate; forming an auxiliary structure in a first preset area of ​​the substrate corresponding to the blind hole area; forming a pixel circuit and a light-emitting element connected to the pixel circuit in a second preset area of ​​the substrate corresponding to the display area, the light-emitting element including: a common layer and a cathode layer located on the side of the common layer facing away from the substrate, the common layer and the cathode layer both extending from the second preset area to above the auxiliary structure; in the first preset area, based on the auxiliary structure, removing the first film layer structure on the side of the auxiliary structure facing away from the substrate, the first film layer structure including at least the common layer and the cathode. The technical solution of the present application can solve the influence of the first film layer structure in the blind hole area on the light transmittance, thereby improving the lighting performance of the blind hole area.

Description

Technical Field

[0001] The present application relates to the technical field of display panels, and more specifically, to a display panel and a manufacturing method thereof. Background Art

[0002] With the continuous development of science and technology, more and more electronic devices with display functions are widely used in people's daily lives and work, bringing great convenience to people's daily lives and work, and becoming an indispensable tool for people today. The key structure for electronic devices to realize the display function is the display panel.

[0003] To integrate more functions into electronic devices, it is necessary to provide blind holes in the display panel to facilitate the integration of under-screen electronic components, such as cameras or other optical elements, below the corresponding blind hole area of ​​the display panel. In related technologies, the light transmittance of the blind hole area is low, which affects the lighting performance of the blind hole area. Summary of the Invention

[0004] In view of this, the present application provides a display panel and a method for manufacturing the same, the scheme is as follows:

[0005] A method for manufacturing a display panel, wherein the display panel includes a blind hole area and a display area at least partially surrounding the blind hole area, the manufacturing method comprising:

[0006] providing a substrate;

[0007] forming an auxiliary structure in a first predetermined area of ​​the substrate corresponding to the blind hole area;

[0008] A pixel circuit and a light-emitting element connected to the pixel circuit are formed in a second predetermined area of ​​the substrate corresponding to the display area, the light-emitting element comprising: a common layer and a cathode layer located on a side of the common layer facing away from the substrate, the common layer and the cathode layer both extending from the second predetermined area to above the auxiliary structure;

[0009] In the first preset area, based on the auxiliary structure, a first film layer structure on a side of the auxiliary structure facing away from the substrate is removed, where the first film layer structure at least includes a common layer and a cathode.

[0010] Based on the same inventive concept, the technical solution of the present application further provides a display panel manufactured by the above-mentioned manufacturing method, wherein the display panel includes a blind hole area and a display area at least partially surrounding the blind hole area, and the display panel includes:

[0011] substrate;

[0012] A pixel circuit is provided on the substrate;

[0013] A light-emitting element is provided on a side of the pixel circuit facing away from the substrate, the light-emitting element comprising: a common layer and a cathode layer located on a side of the common layer facing away from the substrate;

[0014] The blind hole region has a blind hole structure, and the blind hole structure at least penetrates the common layer and the cathode layer.

[0015] From the above description, it can be seen that in the display panel and the manufacturing method thereof provided by the technical solution of the present application, the auxiliary structure is formed in the first preset area of ​​the substrate corresponding to the blind hole area, so that during the process of manufacturing the pixel circuit and the light-emitting element of the panel, the first film layer structure formed in the blind hole area is located above the auxiliary structure. In this way, the first film layer structure in the blind hole area can be removed based on the auxiliary structure, thereby solving the influence of the first film layer structure in the blind hole area on the light transmittance, and improving the lighting performance of the blind hole area. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are merely embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without any creative work.

[0017] The structures, proportions, sizes, etc. depicted in the drawings of this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by persons familiar with this technology. They are not intended to limit the conditions under which this application can be implemented, and therefore have no substantive technical significance. Any structural modifications, changes in proportional relationships, or adjustments in size, without affecting the efficacy and objectives that can be achieved by this application, should still fall within the scope of the technical contents disclosed in this application.

[0018] Figure 1-Figure 5 A process flow chart of a method for manufacturing a display panel provided in an embodiment of the present application;

[0019] Figure 6 A schematic diagram of the principle of peeling off the first film layer structure provided in an embodiment of the present application;

[0020] Figure 7-Figure 9 A process flow chart of another method for manufacturing a display panel provided in an embodiment of the present application;

[0021] Figure 10-14 A process flow chart of another method for manufacturing a display panel provided in an embodiment of the present application;

[0022] Figure 15 A top view of a display panel provided in an embodiment of the present application. DETAILED DESCRIPTION

[0023] The following will be combined with the accompanying drawings in the embodiments of this application to clearly and completely describe the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0024] It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the present invention. Therefore, the present invention is intended to cover modifications and variations of the present invention that fall within the scope of the corresponding claims (technical solutions claimed for protection) and their equivalents. It should be noted that the embodiments provided in the embodiments of the present invention may be combined with each other unless there is any contradiction.

[0025] As described in the background art, in the related art, the light transmittance of the blind hole area is low, which affects the lighting performance of the blind hole area.

[0026] Taking the OLED display panel as an example, the common layer and common cathode of the OLED pixels in the blind hole area will reduce the light transmittance of the blind hole area and affect the lighting performance of the blind hole area.

[0027] In order to solve the above problems, an embodiment of the present application provides a display panel prepared by the above-mentioned manufacturing method. Through the auxiliary structure formed in the first preset area of ​​the substrate corresponding to the blind hole area, the first film layer structure formed in the blind hole area during the production of the pixel circuit and the light-emitting element of the panel can be located above the auxiliary structure. In this way, the first film layer structure in the blind hole area can be removed based on the auxiliary structure, thereby solving the influence of the first film layer structure in the blind hole area on the light transmittance, and improving the lighting performance of the blind hole area.

[0028] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0029] like Figure 1-Figure 5 , Figure 1-Figure 5 This is a process flow chart of a method for manufacturing a display panel provided in an embodiment of the present application. The display panel includes a blind hole area and a display area at least partially surrounding the blind hole area. The manufacturing method includes:

[0030] Step S11: Figure 1 and Figure 2 As shown, a substrate 100 is provided. Figure 1 is a top view of the substrate 100, Figure 2 It is a cross-sectional view of the substrate 100 along the AA′ direction.

[0031] The substrate 100 may be a transparent, translucent, or opaque plate, such as a glass plate, a polyimide flexible plate, or a rigid transparent plastic plate. The substrate 100 may include at least one sub-plate 101. Each sub-plate 101 may be used to form a display panel. When multiple sub-plates 101 are provided, cutting channels 102 are provided between adjacent sub-plates 101 for separating the multiple display panels.

[0032] The present embodiment of the present application uses a substrate 100 having multiple sub-panels 101 as an example to illustrate that multiple display panels can be manufactured simultaneously to mass-produce display panels, thereby improving production efficiency and reducing production costs. Obviously, it is also possible to configure the substrate 100 to include only one sub-panel 101, and to manufacture only one display panel in each production process.

[0033] Step S12: Figure 3 As shown, an auxiliary structure 104 is formed in a predetermined area 103 of the substrate 100 corresponding to the blind hole area.

[0034] To increase the adhesion stability of the film structure on the surface of the substrate 100, a buffer layer 105 can be provided on the surface of the substrate 100. The buffer layer 105 is a light-transmitting film layer, generally an inorganic film layer. The auxiliary structure 104 is located on the side of the buffer layer 105 facing away from the substrate 100.

[0035] Step S13: Figure 4 As shown, a pixel circuit 107 and a light-emitting element 108 connected to the pixel circuit are formed in the second preset area 106 of the substrate 100 corresponding to the display area. The light-emitting element 108 includes: a common layer 205 and a cathode layer 206 located on the side of the common layer 205 away from the substrate 100. The common layer 205 and the cathode layer 206 both extend from the second preset area 106 to above the auxiliary structure 104.

[0036] Step S14: Figure 5 As shown, in the first preset area 103 , based on the auxiliary structure 104 , the first film layer structure 109 on the side of the auxiliary structure 104 facing away from the substrate 100 is removed. The first film layer structure 109 at least includes a common layer 205 and a cathode layer 206 .

[0037] In the embodiment of the present application, by forming an auxiliary structure 104 in the first preset area 103 of the substrate 100 corresponding to the blind hole area, the first film layer structure 109 formed in the blind hole area during the process of manufacturing the pixel circuit 107 and the light-emitting element 108 of the panel can be located above the auxiliary structure 104. In this way, the first film layer structure 109 in the blind hole area can be removed based on the auxiliary structure 104, thereby solving the influence of the first film layer structure 109 in the blind hole area on the light transmittance, and improving the lighting performance of the blind hole area.

[0038] In the manufacturing method provided in the embodiment of the present application, the pixel circuit 107 includes multiple conductive layers M, with insulating layers 200 interposed between different conductive layers M. At least one insulating layer 200 extends from the second predetermined region 106 to above the auxiliary structure 104. The common layer 205 and the cathode layer 206 are located on the side of the insulating layer 200 facing away from the auxiliary structure 104. The first film structure 109 also includes the insulating layer 200 located above the auxiliary structure 104. In this manner, the insulating layer 200 located in the blind hole region during the display panel manufacturing process can also be removed, further improving light transmittance in the blind hole region.

[0039] The drawings of the embodiment of the present application illustrate three stacked metal layers M in the pixel circuit 107. These three metal layers include: a first metal layer M1, which may include the gate of the thin-film transistor in the pixel circuit 107 and may be located on the side of the thin-film transistor active layer facing away from the substrate 100; a second metal layer M2, which may include the source and drain of the thin-film transistor and may be located on the side of the first metal layer M1 facing away from the substrate 100; and a third metal layer MC, which may include the wiring in the pixel circuit 107 and may be located between the first metal layer M1 and the second metal layer M2. The number of metal layers M and the structure of the thin-film transistors may be arranged based on the circuit structure of the pixel circuit 107 in the display panel and are not limited to those shown in the drawings of the embodiment of the present application.

[0040] The drawings of the embodiment of the present application illustrate four stacked insulating layers 200, including: a first insulating layer 201 located between the first metal layer M1 and the substrate 100, which may cover the active layer of the thin-film transistor; a second insulating layer 202 located between the first metal layer M1 and the third metal layer MC; a third insulating layer 203 located between the third metal layer MC and the second metal layer M2; and a fourth insulating layer 204 located on the surface of the second metal layer M2 facing away from the substrate 100. The layout of the insulating layers 200 may be based on the number of metal layers M in the pixel circuit 107, and the number of insulating layers 200 is not limited to that shown in the drawings of the embodiment of the present application.

[0041] In the embodiment of the present application, the display panel is an OLED panel, and the light-emitting element 18 may include: an anode 11 and a cathode 12, and a light-emitting functional layer 13 located between the anode 11 and the cathode 12. The anodes of different light-emitting elements are independent electrodes, and all light-emitting elements have a common cathode 12, that is, all cathodes 12 are cathode layers 206 of the same layer. The light-emitting element also includes a common layer 205. A common layer 205 may be provided between the anode 11 and the light-emitting functional layer 13, and between the cathode layer 206 and the light-emitting functional layer 13. Figure 4 、 Figure 5Only the common layer 205 between the cathode layer 206 and the light-emitting functional layer 13 is shown. The common layer 205 of different light-emitting elements can have the same layer structure. The common layer 205 between the cathode layer 206 and the light-emitting functional layer 13 may include an electron injection layer and / or an electron transport layer, and the common layer 205 between the anode 11 and the light-emitting functional layer 13 may include a hole injection layer and / or a hole transport layer.

[0042] like Figure 4 As shown, before removing the first film structure 109, in the second predetermined region 106, the cathode layer 206 has a first distance from the substrate 100, and in the first predetermined region 103, the cathode layer 206 has a second distance from the substrate 100; wherein the first distance is not equal to the second distance. Setting the first distance to be different from the second distance allows the first film structure 109 to form a stepped structure at the interface between the first predetermined region 103 and the second predetermined region 106, thereby facilitating the breaking of the first film structure 109 at the interface and facilitating the removal of the first film structure 109 in the first predetermined region 103.

[0043] The height difference range between the first distance and the second distance can be adjusted by setting the thickness of the auxiliary structure 104 , and the embodiment of the present application does not specifically limit the height difference range.

[0044] like Figure 6 As shown, Figure 6 A schematic diagram of the principle of peeling the first film layer structure provided in the embodiment of the present application, combined with Figure 4-Figure 6 As shown, the film layer in the first film layer structure 109 extends to the second preset area 106. Specifically, the first film layer structure 109 includes a first portion 1091 located in the first preset area 103 and a second portion 1092 located in the second preset area 106. The first portion 1091 is located above the auxiliary structure 104.

[0045] like Figure 6 As shown in the middle left figure, the first distance is set to be greater than the second distance, that is, the height of the second part 1092 is higher than the height of the first part 1091 relative to the substrate 100. When peeling off the first part 1091, it is necessary to apply a force F away from the substrate 100 to the first film layer structure 109 located in the first preset area 103. Since the first distance is greater than the second distance, the height of the first part 1091 is relatively low. In the process of peeling off the first part 1091, when the first part 1091 is moved away from the substrate 100 based on the force F, it is necessary to first bend the first part 1091, which is bent toward the substrate 100 relative to the second part 1092, in the reverse direction, so as to facilitate the first part 1091 to be peeled off. Figure 6 The position indicated by the dotted circle in the left figure is broken to facilitate the removal of the first film layer structure 109 in the first predetermined area 103 .

[0046] like Figure 6 As shown in the middle right figure, if the first distance is set to be smaller than the second distance, that is, the height of the first portion 1091 is larger, in the process of peeling the first portion 1091, when the first portion 1091 is separated from the substrate 100 based on the force F, due to the relative Figure 6 The method in the middle left picture has one less reverse bend. Figure 6 When the position indicated by the dotted circle in the middle right figure is broken, it is easy to cause the film layer delamination problem in the edge area adjacent to the second predetermined area 106 and the first predetermined area 103.

[0047] A buffer region can be provided between the first predetermined region 103 and the second predetermined region 106. The buffer region can surround or semi-surround the first predetermined region 103. The buffer region includes an ink layer. In a direction perpendicular to the substrate 100, the light-emitting element 108 can be located between the ink layer and the substrate 100. This reduces the reflection of ambient light from structures surrounding the blind via region through the ink layer. Furthermore, the buffer region can be used for routing, allowing signal lines blocked by the blind via region to bypass the blind via region through the buffer region, thereby facilitating routing in the display panel.

[0048] If adopted Figure 6 The method shown in the middle left figure can reduce the width of the buffer area as much as possible within the process accuracy range. The width of the buffer area only needs to meet the routing layout requirements.

[0049] In the embodiment of the present application, it is also possible to use Figure 6 As shown in the middle right figure, the impact of the delamination problem around the blind hole area caused by peeling off the first part 1091 on the panel reliability can be solved by appropriately increasing the width of the buffer area.

[0050] In the embodiment of the present application, the first film layer structure 109 includes a multi-layer stack of first film layers. The first film layer covers the first predetermined area 103 and the second predetermined area 106. The first film layer includes: a cathode layer 206, a common layer 205 for the light-emitting element 108, and an insulating layer 200 between the metal layers M. The first film layer structure 109 located above the auxiliary structure 106 can be removed simultaneously with the auxiliary structure 104, thereby improving the light transmittance of the blind hole area.

[0051] A third film layer structure is provided above the second preset area 106 of the substrate 100, comprising a plurality of stacked film layers. The third film layer structure includes the first film layer and also includes a third film layer structure. In the direction perpendicular to the substrate 100, the third film layer structure has no overlap with the first preset area 103. The third film layer structure includes: a metal layer M, an active layer of the thin film transistor, a conductor layer where the anode 11 is located, a light-emitting functional layer 13, a planarization layer 207, and an anode pixel definition layer 208. The third film layer structure needs to be etched in the display panel process, so the portion of the third film layer structure located in the blind hole area can be removed simultaneously in the corresponding etching process to reduce the degree of adhesion of the film layers at the junction of the first preset area 103 and the second preset area 106, thereby facilitating the removal of the first film layer structure 109.

[0052] The planarization layer 207 is located on the side of the pixel circuit 107 facing away from the substrate 100, and the anode 11 is located on the surface of the planarization layer 207 facing away from the substrate 100. The pixel definition layer 208 is located on the surface of the planarization layer 207 facing away from the substrate 100 and has an opening region exposing the anode 11. The light-emitting functional layer 13 is located within the opening region. In the display panel, the planarization layer 207 and the pixel definition layer 208 are relatively thick. In the direction perpendicular to the substrate 100, the planarization layer 207 and the pixel definition layer 208 are arranged so as not to overlap with the first predetermined area 103, facilitating the subsequent removal of the first film structure 109.

[0053] In the direction perpendicular to the substrate 100, the auxiliary structure 104 does not overlap with the second predetermined area 106. Figure 3-Figure 5 In the illustrated embodiment, the auxiliary structure 104 completely covers the first predetermined area 103. In other embodiments, the auxiliary structure 104 and the first predetermined area 103 may have a predetermined non-zero distance between them in a direction parallel to the substrate 100.

[0054] In the embodiment of the present application, the auxiliary structure 104 includes a release layer 302. The method for removing the first film layer structure 109 includes: irradiating the release layer 302 with a laser to reduce the viscosity of the release layer 302, thereby separating the first film layer structure 109 from the substrate 100. The laser can be incident on the side of the substrate 100 facing away from the auxiliary structure 104, pass through the substrate 100, and then irradiate the release layer 302.

[0055] In one implementation, the release layer 302 includes a polyimide layer. Polyimide (PI) is a photosensitive material that can reduce viscosity upon laser irradiation, facilitating separation from the substrate 100 , thereby peeling off the first film structure 109 in the first predetermined area 103 .

[0056] As described above, a planarization layer 207 is provided between the pixel circuit 107 and the light-emitting element 108; the light-emitting element 108 includes a light-emitting functional layer 13. When PI is used as the release layer 302, the thickness of the release layer 302 is not less than the sum of the thicknesses of the planarization layer 207 and the light-emitting functional layer 13. In this case, a suitable height difference can be formed between the first predetermined region 103 and the second predetermined region 106 of the first film structure 109, facilitating the release of the first film structure 109 in the first predetermined region 103.

[0057] When PI is used as the release layer 302, the auxiliary structure 104 may only include the PI layer. In this case, the method for manufacturing the auxiliary structure 104 includes:

[0058] First, a pre-prepared mask is aligned and attached to the substrate 100 , wherein the mask has a through hole at a position corresponding to the first preset area 103 .

[0059] Then, the PI liquid is dripped into the through-holes of the mask. After the PI in the through-holes is pre-cured, the mask is removed from the substrate 100 and the PI is cured. As mentioned above, the thickness of the PI layer is set to be no less than the sum of the thicknesses of the planarization layer 207 and the light-emitting functional layer 13.

[0060] After removing the PI main curing, normal array production is performed on the substrate 100 to form the pixel circuit 107 and the light-emitting element 108. When producing the light-emitting element 108, the light-emitting functional layer 13 and the common layer 205 are formed by an evaporation process.

[0061] After the cathode layer 206 is prepared, the PI layer and the substrate 100 are separated by laser irradiation. The laser focus is adjusted to the interface between the PI layer and the buffer layer 105, so as to facilitate the peeling and removal of the film layer on the surface of the buffer layer 105 located in the first predetermined area 103.

[0062] In order to facilitate the removal of the first film layer structure 109 in the first preset area 103 , the manufacturing method provided in the embodiment of the present application further includes: after laser irradiation, peeling off the first film layer structure 109 by vibration or vacuum suction nozzle.

[0063] The first preset area 103 has the same shape as the blind hole area. The blind hole area can be circular, square, or other geometric shapes, which is not specifically limited in the present embodiment.

[0064] In the above embodiment, the method for forming the auxiliary structure includes forming an auxiliary structure 104 in the first predetermined area 103, wherein the auxiliary structure 104 covers at least a portion of the first predetermined area 103 in the thickness direction of the substrate 100. In this method, the blind hole area has a blind hole structure. Generally, to ensure the amount of light collected by the display panel in the blind hole area, the aperture size of the blind hole area is in the millimeter range, for example, 1 mm to 5 mm.

[0065] When an auxiliary structure 104 is formed in the first preset area 103 to form a blind hole area with high light transmittance, the size of the auxiliary structure 104 in the direction parallel to the substrate 100 is in the millimeter order to form a blind hole area in the millimeter order. Specifically, the size of the auxiliary structure 104 in the direction parallel to the substrate 100 is not less than 1 mm. Since the auxiliary structure 104 has a size in the millimeter order, after laser irradiation, the first film layer structure 109 can be directly adsorbed by a vacuum suction nozzle to facilitate peeling off the first film layer structure 109.

[0066] A single blind hole area of ​​millimeters in size will cause a large color difference between the blind hole area and the surrounding display area when the display panel is in black screen state. To solve this problem, multiple blind hole structures can be formed in the blind hole area. By reducing the size of the blind hole structure, the color difference with the surrounding area can be reduced based on the micro blind hole structure. In this case, the manufacturing method of the display panel is as follows Figure 7-Figure 9 shown.

[0067] like Figure 7-Figure 9 As shown, Figure 7-Figure 9 A process flow chart of another method for manufacturing a display panel provided in an embodiment of the present application, the manufacturing method comprising:

[0068] First, if Figure 7 As shown, forming the auxiliary structure 104 includes: forming a plurality of auxiliary structures 104 in the first predetermined area 103. A gap is provided between two adjacent auxiliary structures 104 to expose the substrate 100.

[0069] Then, if Figure 8 As shown, after forming a plurality of auxiliary structures 104 , pixel circuits 107 and light emitting elements 107 are formed based on the same process as above. In this process, a second film structure 110 can be simultaneously formed on the surface of the substrate 100 exposed in the gaps between the auxiliary structures 104 .

[0070] Finally, if Figure 9 As shown, after removing the first film layer structure 109 on the auxiliary structure 104, a second film layer structure 110 remains between adjacent auxiliary structures 104. The second film layer structure 110 may include a cathode layer 206, a common layer 205, and an anode layer, so that the blind hole structure gap and the display area have the same appearance color, reducing color deviation.

[0071] Figure 7-Figure 9 The method shown can achieve light transmission in the blind hole area through an array of multiple micro blind hole structures, while reducing the color difference between the blind hole area and the surrounding area.

[0072] Optionally, when forming multiple auxiliary structures 104 in the first predetermined area 103, the arrangement of the auxiliary structures in the first predetermined area 103 is configured to be identical to the arrangement of the opening area of ​​the light-emitting elements in the second predetermined area 106, and the dimensions of the auxiliary structures 104 are the same as those of the opening area. In this case, the arrangement and dimensions of the multiple micro-blind via structures ultimately formed in the blind via area are identical to those of the light-emitting elements in the display area, facilitating the layout of the auxiliary structures. In other embodiments, the layout and dimensions of the multiple auxiliary structures 104 can be adjusted based on the transmittance of the blind via area and color shift requirements, thereby adjusting the arrangement and dimensions of the multiple micro-blind via structures formed in the blind via area.

[0073] In the above embodiment, the auxiliary structure 104 is illustrated as an example including only a separate release layer 302. In other embodiments, the auxiliary structure 104 can also be as follows. Figure 10-12 shown.

[0074] like Figure 10-12 As shown, Figure 10-12 A process flow chart of another method for manufacturing a display panel provided in an embodiment of the present application, the method comprising:

[0075] First, if Figure 10 As shown, an auxiliary structure 104 is formed in the first predetermined area 103. The auxiliary structure 104 includes a release layer 302 and a metal block 303. The metal block 303 is located between the release layer 302 and the subsequently formed first film layer structure 109. The metal block 303 is bonded and fixed to the substrate 100 via the release layer 302.

[0076] Then, if Figure 11 As shown, similar to the above embodiment, a third film layer structure 304 is formed in the second predetermined area 106 , including a pixel circuit 107 and a light-emitting element 108 .

[0077] Finally, if Figure 12 As shown, based on the auxiliary structure 104 , the first film layer structure 109 in the first preset area 103 is removed.

[0078] In one embodiment, after laser irradiation, the method for removing the first film layer structure 109 includes: peeling off the first film layer structure 109 based on the gravity of the metal block 303 and the first film layer structure 109; the metal block has a large gravity, which can make the substrate 100 placed horizontally and the metal block 303 set downward. After laser irradiation, the first film layer structure 109 in the first preset area 103 can be peeled off by gravity while removing the auxiliary structure 104.

[0079] In other embodiments, after laser irradiation, the method for removing the first film layer structure 109 includes: peeling off the first film layer structure 109 by applying a magnetic force to the metal block 303 .

[0080] In other embodiments, after laser irradiation, the method of removing the first film layer structure 109 includes peeling off the first film layer structure 109 based on the gravity of the metal block 303 and the first film layer structure 109 and the magnetic force acting on the metal block 303 .

[0081] In order to prevent the sidewall friction from damaging the surrounding film structure when the metal block is peeled off, in this method, a preset non-zero distance is set between the boundary of the auxiliary structure 104 and the first predetermined area 103 . Figure 10-12 The illustrated method is suitable for a macro blind hole structure due to the presence of the metal block 303 , that is, an auxiliary structure 104 is provided in the first preset area 103 .

[0082] exist Figure 10-12 In the illustrated embodiment, the surface of the first predetermined region 103 comprises a semiconductor layer 301, and a metal block 303 is secured to the surface of the semiconductor layer 301 via a release layer 302. The semiconductor layer 301 is made of amorphous silicon (a-Si) or amorphous gallium oxide (a-GaOx). The semiconductor layer 301 protects the substrate 100 from mechanical damage and can be at least partially removed by the adhesive layer during removal of the auxiliary structure 104, minimizing the impact on light transmittance in the blind hole region.

[0083] Optionally, the thickness of the semiconductor layer 301 does not exceed In this thickness range, since the semiconductor layer 301 is thin and has a high light transmittance, even after the auxiliary structure 104 is removed, the semiconductor layer 301 has a partial thickness remaining, which has little effect on the light transmittance of the blind hole area. Figure 10-12 In the embodiment shown, the release layer 302 is a high temperature resistant adhesive layer. In order to prevent the adhesive layer from contaminating the surface of the substrate 100, as shown in FIG. Figure 13 As shown, when the auxiliary structure 104 is formed, a protective film layer 305 is provided between the release layer 302 and the semiconductor layer 301. Figure 14As shown, a groove is provided on the side of the metal block 303 facing away from the substrate 100, and at least a portion of the first film structure 109 is located within the groove. In this way, by changing the shape of the metal block 303, adhesion of the evaporated material to the edge of the metal block 303 is avoided, which would affect the state of the evaporated film layer after peeling.

[0084] For the finished display panel, the material composition of the blind hole area was analyzed. The analysis results showed that the common layer 205 and the cathode layer 206 that had a greater impact on the light transmittance in the blind hole area were effectively removed.

[0085] As can be seen from the above description, the technical solution of the present application does not change the mask structure of the film layer to be patterned in the display panel. Instead, an auxiliary structure 104 is provided in the first predetermined area 103 corresponding to the blind hole area to shield the first film layer structure 109 in the blind hole area. The auxiliary structure 104 is easy to peel and remove relative to the substrate 100. This allows only the substrate 100 or a portion of the substrate 100 and a portion of the semiconductor layer 301 on its surface to remain in the blind hole area, resulting in a higher light transmittance in the blind hole area, thereby ensuring that the transmittance of the blind hole area meets the specifications.

[0086] In other embodiments, a filling structure may be provided between the auxiliary structure 104 and the substrate 100. The filling structure may be an optical adhesive (OC) with a high transmittance. When the auxiliary structure 104 is removed, the optical adhesive on the surface of the substrate 100 in the first preset area 103 is retained. The thickness of the optical adhesive may be set to be the same as the thickness of the third film layer on the surface of the second preset area 106. After removing the auxiliary structure 104 and the first film layer structure 109, the blind hole area and the display area may be made flush. At this time, the first distance is smaller than the second distance, and the two have a large height difference, so that each film layer in the first film layer structure can be broken at the junction of the first preset area 103 and the second preset area 106, which is convenient for peeling and removal.

[0087] Based on the above embodiment, another embodiment of the present application further provides a display panel manufactured by the manufacturing method of the above embodiment, such as Figure 15 As shown, Figure 15 A top view of a display panel provided in an embodiment of the present application, combined with the above embodiment drawings and Figure 15 As shown, the display panel includes a blind hole area 402 and a display area 401 at least partially surrounding the blind hole area 402. The display panel includes:

[0088] substrate 100;

[0089] A pixel circuit 107 is provided on the substrate 100;

[0090] A light emitting element 108 is provided on a side of the pixel circuit 107 facing away from the substrate 100 , and the light emitting element 108 includes: a common layer 205 and a cathode layer 206 located on a side of the common layer 205 facing away from the substrate 100 ;

[0091] The blind hole region 402 has a blind hole structure, and the blind hole structure at least penetrates the common layer 205 and the cathode layer 206 .

[0092] In the embodiment of the present application, the display panel can be used as a display panel for electronic devices with display functions such as mobile phones, tablet computers, and wearable devices, and an under-screen camera or other optical elements can be integrated in the blind hole area 402.

[0093] Since the blind hole structure at least passes through the common layer 205 and the cathode layer 206 , the influence of the common layer 205 and the cathode layer on the light transmittance of the blind hole area 402 is avoided, thereby ensuring the lighting effect of the blind hole area 402 .

[0094] The various embodiments in this specification are described in a progressive, parallel, or combined manner. Each embodiment focuses on the differences from other embodiments, and reference can be made to the corresponding similar parts between the various embodiments. Regarding the display panels disclosed in the embodiments, since they correspond to the manufacturing methods disclosed in the embodiments, the description is relatively simple. For relevant details, refer to the corresponding description of the manufacturing methods.

[0095] It should be noted that in the description of this application, it should be understood that the terms "upper", "lower", "top", "bottom", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting this application. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be a centrally located component.

[0096] It should also be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such article or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the article or device comprising the aforementioned elements.

[0097] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present application. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application is not limited to the embodiments shown herein, but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for manufacturing a display panel, wherein the display panel comprises a blind hole area and a display area at least partially surrounding the blind hole area, characterized in that: The production method comprises: providing a substrate; forming an auxiliary structure in a first predetermined area of ​​the substrate corresponding to the blind hole area; the auxiliary structure includes a release layer; A pixel circuit and a light-emitting element connected to the pixel circuit are formed in a second preset area of ​​the substrate corresponding to the display area, the light-emitting element comprising: a common layer and a cathode layer located on a side of the common layer facing away from the substrate, the common layer and the cathode layer both extending from the second preset area to above the auxiliary structure; In the first predetermined area, based on the auxiliary structure, a first film layer structure on a side of the auxiliary structure facing away from the substrate is removed, the first film layer structure including at least the common layer and the cathode; the method for removing the first film layer structure includes: irradiating the release layer with a laser to reduce the viscosity of the release layer, thereby separating the first film layer structure from the substrate; In which, the auxiliary structure also includes a metal block, which is located between the release layer and the first film layer structure; after laser irradiation, the method of removing the first film layer structure includes: peeling off the first film layer structure based on the gravity of the metal block and the first film layer structure; and / or peeling off the first film layer structure by the magnetic force acting on the metal block.

2. The production method according to claim 1, characterized in that The pixel circuit includes multiple conductive layers, with insulating layers between different conductive layers, and at least one insulating layer extends from the second preset area to above the auxiliary structure; the common layer and the cathode layer are located on a side of the insulating layer away from the auxiliary structure; Wherein, the first film layer structure further includes the insulating layer located above the auxiliary structure.

3. The production method according to claim 1, characterized in that Before removing the first film layer structure, in the second preset area, the cathode layer has a first distance from the substrate, and in the first preset area, the cathode layer has a second distance from the substrate; The first distance is not equal to the second distance.

4. The production method according to claim 3, characterized in that: The first distance is greater than the second distance.

5. The production method according to claim 1, characterized in that: The release layer includes a polyimide layer.

6. The manufacturing method according to claim 5, characterized in that: A planarization layer is provided between the pixel circuit and the light-emitting element; the light-emitting element includes a light-emitting functional layer; The thickness of the release layer is not less than the sum of the thicknesses of the planarization layer and the light-emitting functional layer.

7. The production method according to claim 1, characterized in that: Also includes: After laser irradiation, the first film layer structure is peeled off by vibration or vacuum suction nozzle.

8. The production method according to claim 1, characterized in that: A semiconductor layer is provided on the surface of the first preset area, and the metal block is fixed on the surface of the semiconductor layer through the release layer.

9. The production method according to claim 8, characterized in that: A protective film layer is provided between the release layer and the semiconductor layer.

10. The manufacturing method according to claim 8, characterized in that: The thickness of the semiconductor layer does not exceed 11. The production method according to claim 1, characterized in that: The metal block has a groove on a side facing away from the substrate.

12. The manufacturing method according to claim 1, characterized in that: The method of forming the auxiliary structure includes: An auxiliary structure is formed in the first preset area, and in the thickness direction of the substrate, the auxiliary structure covers at least a portion of the first preset area.

13. The manufacturing method according to claim 1, characterized in that: The method of forming the auxiliary structure includes: forming a plurality of the auxiliary structures in the first preset area; Wherein, after the first film layer structure on the auxiliary structure is removed, the second film layer structure remains between adjacent auxiliary structures.

14. The manufacturing method according to claim 13, characterized in that: The arrangement of the auxiliary structures in the first preset area is the same as that of the opening areas of the light-emitting elements in the second preset area, and the size of the auxiliary structures is the same as that of the opening areas.

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