Display panel and manufacturing method thereof

Abstract

This invention discloses a display panel and its manufacturing method. The display panel includes a display area and a non-display area adjacent to the display area; the display panel also includes a substrate, a thin-film transistor layer, a light-emitting layer, and a color filter layer; the thin-film transistor layer is disposed on the substrate and includes wiring portions disposed in the non-display area; the light-emitting layer is disposed on the side of the thin-film transistor layer away from the substrate; the color filter layer is disposed on the side of the light-emitting layer away from the thin-film transistor layer and includes a light-shielding portion and multiple filter portions disposed in the display area; wherein, the light-shielding portion includes a light-shielding sub-portion disposed in the non-display area, and the orthogonal projection of the light-shielding sub-portion onto the thin-film transistor layer at least covers the wiring portions. This invention can shield the wiring portions in the non-display area, effectively preventing reflection from the wiring portions, and improving the appearance and overall black effect of the display panel.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to a display panel and its manufacturing method. Background Technology

[0002] OLED (Organic Light-Emitting Diode) display panels are display panels made using organic light-emitting diodes. Due to their superior characteristics such as no need for backlight, high contrast, thinness, wide viewing angle, fast response speed, wide operating temperature range, and simpler construction and manufacturing process, they are considered to be the next generation of emerging application technology for flat panel displays.

[0003] Currently, OLED display panels often use protective covers to protect the internal film layers. However, since the protective covers are transparent, the metal traces of the underlying array substrate (i.e., thin-film transistor array substrate) are clearly visible in the non-display areas of the display panel. Even after the polarizer is attached, the metal traces are still visible to the naked eye, and they reflect bright light, especially in environments with strong natural light, which seriously affects the appearance and display effect of the OLED display panel and the seamless black effect.

[0004] In related technologies, inkjet printing is used to form ink in the non-display area of ​​the display panel for masking. However, because the ink is prone to overflow into the display area, the display effect of the display panel is affected. Summary of the Invention

[0005] This invention provides a display panel and its manufacturing method, which can shield the non-display area of ​​the display panel and prevent glare from the traces in the non-display area.

[0006] This invention provides a display panel, which includes a display area and a non-display area adjacent to the display area;

[0007] The display panel also includes:

[0008] substrate;

[0009] A thin-film transistor layer is disposed on the substrate and includes a trace portion disposed in the non-display area;

[0010] A light-emitting layer is disposed on the side of the thin-film transistor layer away from the substrate; and

[0011] A color filter layer is disposed on the side of the light-emitting layer away from the thin-film transistor layer, and includes a light-shielding portion and a plurality of filter portions disposed within the display area;

[0012] The light-shielding portion includes a light-shielding sub-portion disposed within the non-display area, and the orthogonal projection of the light-shielding sub-portion onto the thin-film transistor layer at least covers the trace portion.

[0013] In one embodiment of the present invention, the light-shielding portion further includes a black matrix sub-part disposed within the display area, and the material of the light-shielding sub-part is the same as the material of the black matrix sub-part.

[0014] In one embodiment of the present invention, the black matrix sub-part includes a plurality of openings distributed in the display area, the plurality of filter parts include a plurality of color resist blocks distributed in the display area, the light-emitting layer includes a plurality of light-emitting pixels, and one opening is disposed corresponding to one light-emitting pixel, and one color resist block is disposed correspondingly in one opening and at least partially covers the side of the black matrix sub-part away from the light-emitting layer.

[0015] In one embodiment of the present invention, the plurality of color resist blocks include a red color resist block, a green color resist block, and a blue color resist block;

[0016] Wherein, the CIE color coordinate x of the red color block is greater than or equal to 0.660 and less than or equal to 0.680, and the CIE color coordinate y of the red color block is greater than or equal to 0.310 and less than or equal to 0.320;

[0017] The CIE color coordinate x of the green color block is greater than or equal to 0.202 and less than or equal to 0.206, and the CIE color coordinate y of the green color block is greater than or equal to 0.637 and less than or equal to 0.641.

[0018] The CIE color coordinate x of the blue color block is greater than or equal to 0.140 and less than or equal to 0.145, and the CIE color coordinate y of the blue color block is greater than or equal to 0.096 and less than or equal to 0.098.

[0019] In one embodiment of the present invention, the luminance factor of the red color block is greater than or equal to 16.2 and less than or equal to 16.8, the luminance factor of the green color block is greater than or equal to 37.7 and less than or equal to 39.1, and the luminance factor of the blue color block is greater than or equal to 11.7 and less than or equal to 13.4.

[0020] In one embodiment of the present invention, the curing temperature of the material of the color filter layer is less than or equal to 85°C.

[0021] In one embodiment of the present invention, the orthogonal projection of the light-shielding portion on the substrate overlaps with the non-display area.

[0022] In one embodiment of the present invention, the display panel further includes an adhesive layer and a cover plate disposed on the side of the color filter layer away from the light-emitting layer, wherein the side of the adhesive layer near the color filter layer covers the color filter layer, and the side of the adhesive layer away from the color filter layer is bonded to the cover plate.

[0023] According to the above-mentioned objective of the present invention, a method for manufacturing a display panel is provided, the display panel including a display area and a non-display area adjacent to the display area;

[0024] The method for manufacturing the display panel includes the following steps:

[0025] Provide substrate;

[0026] A thin-film transistor layer is formed on the substrate, the thin-film transistor layer including a trace portion disposed in the non-display area;

[0027] A light-emitting layer is formed on the side of the thin-film transistor layer away from the substrate;

[0028] A color filter layer is formed on the side of the light-emitting layer away from the thin-film transistor layer. The color filter layer includes a light-shielding portion and a plurality of filter portions disposed in the display area. The light-shielding portion includes a light-shielding sub-portion disposed in the non-display area, and the orthogonal projection of the light-shielding sub-portion on the thin-film transistor layer at least covers the trace portion.

[0029] In one embodiment of the present invention, forming a color filter layer on the side of the light-emitting layer away from the thin-film transistor layer includes the following steps:

[0030] A light-shielding portion is formed on the side of the light-emitting layer away from the thin-film transistor layer. The light-shielding portion includes a black matrix sub-part formed in the display area and a light-shielding sub-part formed in the non-display area and integrally formed with the black matrix sub-part. The black matrix sub-part includes a plurality of openings distributed in the display area.

[0031] Multiple light-filtering sections are formed on the side of the light-shielding section away from the light-emitting layer. Each of the multiple light-filtering sections includes multiple color resist blocks, and one of the color resist blocks is correspondingly disposed in one of the openings, and at least partially covers the side of the black matrix sub-section away from the light-emitting layer.

[0032] The curing temperature of the light-shielding part and the plurality of light-filtering parts is less than or equal to 85°C.

[0033] The beneficial effects of the present invention are as follows: The present invention replaces the polarizer in the related art by setting a color filter layer on the light-emitting layer, and sets a light-shielding sub-part in the non-display area in the color filter layer, wherein the light-shielding sub-part overlaps at least with the wiring part in the thin film transistor layer to shield the wiring part, effectively preventing reflection from the wiring part, and improving the appearance display effect and the all-black effect of the display panel. Attached Figure Description

[0034] The technical solution and other beneficial effects of the present invention will become apparent from the following detailed description of specific embodiments of the invention, in conjunction with the accompanying drawings.

[0035] Figure 1 This is a schematic diagram of the structure of a display panel provided in an embodiment of the present invention;

[0036] Figure 2 The material transmission spectrum of the filter section provided in the embodiment of the present invention;

[0037] Figure 3 A flowchart illustrating the manufacturing method of a display panel according to an embodiment of the present invention;

[0038] Figures 4 to 10 This is a schematic diagram of the manufacturing process of a display panel provided in an embodiment of the present invention. Detailed Implementation

[0039] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0040] The following disclosure provides many different embodiments or examples for implementing various structures of the invention. To simplify the disclosure, specific examples of components and arrangements are described below. These are merely examples and are not intended to limit the invention. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, examples of various specific processes and materials are provided in this invention, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0041] This invention provides a display panel, please refer to... Figure 1 The display panel includes a display area 101 and a non-display area 102 adjacent to the display area 101.

[0042] The display panel also includes a substrate 10, a thin-film transistor layer 20, a light-emitting layer 30, and a color filter layer 40. The thin-film transistor layer 20 is disposed on the substrate 10 and includes wiring portions 21 disposed within the non-display area 102. The light-emitting layer 30 is disposed on the side of the thin-film transistor layer 20 away from the substrate 10. The color filter layer 40 is disposed on the side of the light-emitting layer 30 away from the thin-film transistor layer 20 and includes light-shielding portions 41 and multiple light-filtering portions 42 disposed within the display area 101.

[0043] Furthermore, the light-shielding portion 41 includes a light-shielding sub-portion 411 disposed in the non-display area 102, and the orthogonal projection of the light-shielding sub-portion 411 on the thin film transistor layer 20 at least covers the trace portion 21.

[0044] In the implementation and application process, the present invention replaces the polarizer in the related technology by setting a color filter layer 40 on the light-emitting layer 30, and sets a light-shielding sub-part 411 in the non-display area 102 in the color filter layer 40. The light-shielding sub-part 411 is at least overlapped with the wiring part 21 in the thin film transistor layer 20 to shield the wiring part 21, effectively preventing the wiring part 21 from reflecting light, and improving the appearance display effect and the all-black effect of the display panel.

[0045] Specifically, please continue to refer to Figure 1 The display panel provided in this embodiment of the invention includes a substrate 10, a thin film transistor layer 20, an anode layer 51, a pixel definition layer 52, a light-emitting layer 30, a cathode layer 53, an encapsulation layer 60, a first adhesive layer 71, a color filter layer 40, a second adhesive layer 72, and a cover plate 80.

[0046] The substrate 10 can be a rigid substrate or a flexible substrate. The rigid substrate can be one or more of glass and metal sheets, but is not limited to. The flexible substrate can be one or more of polyethylene terephthalate, polyethylene terephthalate, polyether ether ketone, polystyrene, polycarbonate, polyarylate, polyarylate, polyimide, polyvinyl chloride, polyethylene, and textile fiber, but is not limited to.

[0047] The thin-film transistor layer 20 is disposed on the substrate 10, and the thin-film transistor layer 20 includes a light-shielding layer 22 disposed on the substrate 10, a first insulating layer 23 disposed on the substrate 10 and covering the light-shielding layer 22, an active layer disposed on the first insulating layer 23, a gate insulating layer disposed on the active layer, an upper layer disposed on the gate insulating layer, a gate insulating layer and a gate second insulating layer 25 disposed on the first insulating layer 23 and covering the active layer, a source and a drain disposed on the second insulating layer 25 and passing through the second insulating layer 25 and overlapping with both sides of the active layer, a third insulating layer 26 disposed on the second insulating layer 25 and covering the source and drain, a transition portion 27 disposed on the third insulating layer 26 and passing through the third insulating layer 26 and overlapping with the source or drain, and a planarization layer 28 disposed on the third insulating layer 26 and covering the transition portion 27. The active layer, gate, source, and drain constitute a thin-film transistor 24, and the thin-film transistor layer includes multiple thin-film transistors 24. The illustrations provided in this embodiment of the invention only show the structure of one of the thin-film transistors 24 for illustrative purposes.

[0048] Optionally, the material of the light-shielding layer 22 may be molybdenum, and the materials of the first insulating layer 23, the second insulating layer 25 and the third insulating layer 26 may include at least one of silicon nitride and silicon oxide.

[0049] It should be noted that the thin film transistor layer 20 also includes a trace portion 21 disposed in the non-display area 102, and the trace portion 21 may include signal traces disposed on the same layer as the source and drain, or signal traces disposed on the same layer as the transition portion 27. The signal traces can be used to form a driving circuit located in the non-display area 102, such as a GOA driving circuit.

[0050] An anode layer 51 is disposed on a planarization layer 28, and the anode layer 51 includes a plurality of anodes. Each anode is connected to the adapter 27 through a via through the planarization layer 28 to achieve electrical connection between the anode and the thin film transistor 24. It can be understood that in this embodiment of the invention, one anode corresponds to one thin film transistor 24.

[0051] The pixel definition layer 52 is disposed on the planarization layer 28, and the pixel definition layer 52 has multiple pixel openings, wherein each pixel opening corresponds to an anode to expose the upper surface of the corresponding anode.

[0052] The light-emitting layer 30 is disposed on the pixel definition layer 52, and the light-emitting layer 30 includes a plurality of light-emitting pixels 31. Each light-emitting pixel 31 is disposed in a pixel opening and located on the upper surface of the corresponding anode. It is understood that the illustrations provided in this invention only show one thin-film transistor and the structure of the corresponding anode, pixel opening and light-emitting pixel 31 as an example for explanation.

[0053] The cathode layer 53 is disposed on the pixel definition layer 52 and continuously covers the pixel definition layer 52 and multiple light-emitting pixels 31.

[0054] The encapsulation layer 60 is disposed on the pixel definition layer 52, and the encapsulation layer 60 may include an inorganic layer, an organic layer, and a stacked structure of inorganic layers, or a stacked structure of organic and inorganic layers. The specific choice can be made according to actual needs and is not limited here.

[0055] The first adhesive layer 71 is disposed on the encapsulation layer 60. Optionally, the material of the first adhesive layer 71 includes OCA optical adhesive.

[0056] A color filter layer 40 is disposed on the first adhesive layer 71, and the color filter layer 40 includes a light-shielding part 41 and a filter part 42 disposed in the display area 101. The light-shielding part 41 includes a light-shielding sub-part 411 disposed in the non-display area 102 and a black matrix sub-part 412 disposed in the display area 101. The black matrix sub-part 412 includes a plurality of openings distributed in the display area 101. The filter part 42 may be a color resist block, and each color resist block is disposed in one opening and at least partially covers the side of the black matrix sub-part 412 away from the light-emitting layer 30.

[0057] In this embodiment of the invention, the light-shielding sub-part 411 is connected to the black matrix sub-part 412, and the orthogonal projection of the light-shielding sub-part 411 on the thin film transistor layer 20 at least covers the trace part 21, thereby providing a shielding effect on the trace part 21, effectively preventing reflection from the trace part 21, and improving the appearance display effect and the all-black effect of the display panel.

[0058] Optionally, the light-shielding sub-part 411 may be made of the same material as the black matrix sub-part 412 and be integrally formed, and the light-shielding sub-part 411 may overlap with the non-display area 102.

[0059] Furthermore, each filter section 42 is provided corresponding to one light-emitting pixel 31 to filter the light emitted by each light-emitting pixel 31, while the black matrix subsection 412 can block the light emitted by adjacent light-emitting pixels 31 to prevent crosstalk between light emitted by adjacent light-emitting pixels 31 and to prevent reflection of the traces and devices in the thin film transistor layer 20 in the display area 101.

[0060] The second adhesive layer 72 is disposed on the color filter layer 40 and covers the light-shielding part 41 and multiple filter parts 42. The cover plate 80 is disposed on the second adhesive layer 72 and is attached to the side of the color filter layer 40 away from the encapsulation layer 60 through the second adhesive layer 72.

[0061] In practical applications, related technologies often replace polarizers by forming color filters on a protective cover. This involves forming a black matrix layer on the protective cover, then patterning the black matrix layer to create multiple openings, and finally forming color resist blocks within these openings to create the color filter. Each color resist block is then aligned with a light-emitting unit in the panel body to bond the protective cover to the panel body. However, aligning the color resist blocks with each light-emitting unit requires high precision and is prone to deviation. In this embodiment of the invention, the color filter layer 40 is directly placed on the encapsulation layer 60, eliminating the need for alignment during the subsequent bonding of the cover 80. This reduces the reflectivity of the display panel and lowers manufacturing costs.

[0062] In this embodiment of the invention, the material of the color filter layer 40 is a low-temperature photoresist material, and the curing temperature of the material of the color filter layer 40 can be less than or equal to 85°C.

[0063] Furthermore, the filter section 42 may be a color resist block, and the color resist block may include a red color resist block, a green color resist block, and a blue color resist block.

[0064] Among them, the CIE color coordinate x of the red color block is greater than or equal to 0.660 and less than or equal to 0.680, and the CIE color coordinate y of the red color block is greater than or equal to 0.310 and less than or equal to 0.320.

[0065] The CIE color coordinate x of the green color block is greater than or equal to 0.202 and less than or equal to 0.206, and the CIE color coordinate y of the green color block is greater than or equal to 0.637 and less than or equal to 0.641.

[0066] The CIE color coordinate x of the blue color block is greater than or equal to 0.140 and less than or equal to 0.145, and the CIE color coordinate y of the blue color block is greater than or equal to 0.096 and less than or equal to 0.098.

[0067] Furthermore, the luminance factor of the red color block is greater than or equal to 16.2 and less than or equal to 16.8, the luminance factor of the green color block is greater than or equal to 37.7 and less than or equal to 39.1, and the luminance factor of the blue color block is greater than or equal to 11.7 and less than or equal to 13.4.

[0068] Furthermore, in this embodiment of the invention, the CIE color coordinates and luminance factor of each color resist block are designed to filter the light emitted by each light-emitting pixel 31, thereby improving the color gamut of the display panel.

[0069] Please refer to Figure 2This is a light transmittance spectrum of the material of the color filter layer 40 in this embodiment of the invention, including the transmittance curves of the red, green and blue color resist blocks for light of various wavelengths. Specifically, in the color filter layer 40 provided in this embodiment of the invention, the wavelength corresponding to the peak of light transmitted by the blue color resist block is about 440nm, the wavelength corresponding to the peak of light transmitted by the green color resist block is about 500nm, and the wavelength corresponding to the peak of light transmitted by the red color resist block is about 670nm. That is, the color filter layer 40 provided in this embodiment of the invention can effectively improve the purity of light emitted by each light-emitting pixel 31, improve the color gamut of the display panel, and thus improve the display effect of the display panel.

[0070] In other embodiments of the present invention, the light-shielding part 41 may also be arranged by overlapping adjacent color resist blocks to achieve light shielding, that is, each color resist block corresponds to one light-emitting pixel, and adjacent color resist blocks are overlapped between adjacent light-emitting pixels to achieve the light-shielding effect. In the non-display area 102, at least two colors of color resist blocks can be stacked to shield the wiring part 21 in the non-display area 102.

[0071] Continuing from the above, this invention replaces the polarizer in related technologies by setting a color filter layer 40 on the light-emitting layer 30, and sets a light-shielding sub-part 411 in the non-display area 102 within the color filter layer 40. The light-shielding sub-part 411 overlaps at least with the wiring portion 21 in the thin-film transistor layer 20 to shield the wiring portion 21, effectively preventing reflection from the wiring portion 21 and improving the appearance and overall black effect of the display panel. Furthermore, in this embodiment, a low-temperature photoresist material is used to directly set the color filter layer 40 on the encapsulation layer 60, eliminating the need for alignment when subsequently bonding the cover plate 80. This reduces the reflectivity of the display panel and lowers manufacturing costs.

[0072] In addition, this invention also provides a method for manufacturing the display panel described in the above embodiments, please refer to... Figure 1 , Figure 3 as well as Figures 4 to 10 The display panel includes a display area 101 and a non-display area 102 adjacent to the display area 101.

[0073] The manufacturing method of this display panel includes:

[0074] S10, Provide substrate 10.

[0075] The substrate 10 can be a rigid substrate or a flexible substrate. The rigid substrate can be one or more of glass and metal sheets, but is not limited to. The flexible substrate can be one or more of polyethylene terephthalate, polyethylene terephthalate, polyether ether ketone, polystyrene, polycarbonate, polyarylate, polyarylate, polyimide, polyvinyl chloride, polyethylene, and textile fiber, but is not limited to.

[0076] S20. A thin film transistor layer 20 is formed on the substrate 10. The thin film transistor layer 20 includes a trace portion 21 disposed in the non-display area 102.

[0077] The thin-film transistor layer 20 includes a light-shielding layer 22 disposed on the substrate 10, a first insulating layer 23 disposed on the substrate 10 and covering the light-shielding layer 22, an active layer disposed on the first insulating layer 23, a gate insulating layer disposed on the active layer, an upper layer disposed on the gate insulating layer, a second insulating layer 25 disposed on the first insulating layer 23 and covering the active layer, the gate insulating layer, and the gate, a source and a drain disposed on the second insulating layer 25 and passing through the second insulating layer 25 to overlap with both sides of the active layer, a third insulating layer 26 disposed on the second insulating layer 25 and covering the source and drain, a transition portion 27 disposed on the third insulating layer 26 and passing through the third insulating layer 26 to overlap with the source or drain, and a planarization layer 28 disposed on the third insulating layer 26 and covering the transition portion 27. The active layer, gate, source, and drain constitute a thin-film transistor 24, and the thin-film transistor layer includes multiple thin-film transistors 24. The illustrations provided in this embodiment only show the structure of one thin-film transistor 24 for illustrative purposes.

[0078] Optionally, the material of the light-shielding layer 22 may be molybdenum, and the materials of the first insulating layer 23, the second insulating layer 25 and the third insulating layer 26 may include at least one of silicon nitride and silicon oxide.

[0079] It should be noted that the thin film transistor layer 20 also includes a trace portion 21 disposed in the non-display area 102, and the trace portion 21 may include signal traces disposed on the same layer as the source and drain, or signal traces disposed on the same layer as the transition portion 27. The signal traces can be used to form a driving circuit located in the non-display area 102, such as a GOA driving circuit.

[0080] S30, A light-emitting layer 30 is formed on the side of the thin-film transistor layer 20 away from the substrate 10.

[0081] An anode layer 51 and a pixel definition layer 52 are formed on the planarization layer 28, wherein the anode layer 51 includes a plurality of anodes and the pixel definition layer 52 defines a plurality of pixel openings to expose the upper surface of each anode.

[0082] A light-emitting layer 30 is formed on the pixel definition layer 52, and the light-emitting layer 30 includes light-emitting pixels 31 formed in each pixel opening.

[0083] A cathode layer 53 is formed on the pixel definition layer 52, and the cathode layer 53 continuously covers a plurality of light-emitting pixels 31.

[0084] S40. A color filter layer 40 is formed on the side of the light-emitting layer 30 away from the thin film transistor layer 20. The color filter layer 40 includes a light-shielding portion 41 and a plurality of filter portions 42 disposed in the display area 101. The light-shielding portion 41 includes a light-shielding sub-portion 411 disposed in the non-display area 102, and the orthogonal projection of the light-shielding sub-portion 411 on the thin film transistor layer 20 at least covers the trace portion 21.

[0085] An encapsulation layer 60 and a first adhesive layer 71 are sequentially formed on the cathode layer 53. The encapsulation layer 60 may include an inorganic layer, an organic layer, or a stacked structure of inorganic layers, or a stacked structure of organic and inorganic layers. The specific selection can be made according to actual needs and is not limited here. The material of the first adhesive layer 71 includes OCA optical adhesive.

[0086] A color filter layer 40 is formed on the first adhesive layer 71 using low-temperature photoresist. Specifically, a black matrix layer is formed on the first adhesive layer 71 using black photoresist material, and the black matrix layer is patterned to form multiple openings in the display area 101 to form a black matrix sub-part 412 located in the display area 101. During the patterning process, the black matrix layer located in the non-display area 102 is not patterned to obtain a light-shielding sub-part 411 covering the non-display area 102, so that the orthogonal projection of the light-shielding sub-part 411 on the thin film transistor layer 20 at least covers the trace portion 21, and the light-shielding sub-part 411 and the black matrix sub-part 412 constitute the light-shielding portion 41.

[0087] The curing temperature of the light-shielding part 41 can be less than or equal to 85°C, and the material of the light-shielding part 41 may include monomethyl ether propylene glycol acetate, cyclohexanone, carbon black, acrylic resin and dimethyl succinate.

[0088] Then, a plurality of filter portions 42 are formed on the light-shielding portion 41 using a low-temperature photoresist material. Specifically, each filter portion 42 may include a red color block, a green color block, and a blue color block. The curing temperature of each filter portion 42 may be less than or equal to 85°C. The material of the red color block may include 1-methoxy-2-propyl acetate, 3-methoxy-3-methyl-1-acetate, pentaerythritol triacrylate, pentaerythritol tetraallyl propionate, an exposure resin, additives, and a red pigment. The material of the green color block includes 1-methoxy-2-propyl acetate, 3-methoxy-3-methyl-1-acetate, an exposure resin, pentaerythritol triacrylate, and a green dye. The material of the blue color block includes 1-methoxy-2-propyl acetate, 3-methoxy-3-methyl-1-acetate, an exposure resin, pentaerythritol triacrylate, and a copper compound.

[0089] Specifically, a red photoresist block 421 can be formed in the opening by first using a low-temperature photoresist material through processes such as coating, exposure, development, etching, and stripping. Then, a green photoresist block 422 can be formed in the opening by using a low-temperature photoresist material through processes such as coating, exposure, development, etching, and stripping. Finally, a blue photoresist block 423 can be formed in the opening by using a low-temperature photoresist material through processes such as coating, exposure, development, etching, and stripping. It should be noted that the light-emitting pixel 31 corresponding to the red photoresist block 421 emits red light, the light-emitting pixel 31 corresponding to the green photoresist block 422 emits green light, and the light-emitting pixel 31 corresponding to the blue photoresist block 423 emits blue light.

[0090] Next, a second adhesive layer 72 is formed on the color filter layer 40, and the material of the second adhesive layer 72 may include OCA optical adhesive.

[0091] Finally, the cover plate 80 is attached to the side of the second adhesive layer 72 facing away from the color filter layer 40 to form a display panel.

[0092] Furthermore, embodiments of the present invention also provide a display device, which includes the display panel described in the above embodiments, or a display panel manufactured using the manufacturing method of the display panel described in the above embodiments.

[0093] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0094] The above provides a detailed description of a display panel and its manufacturing method according to embodiments of the present invention. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only for the purpose of helping to understand the technical solutions and core ideas of the present invention. Those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display panel, characterized by, The display panel includes a display area and a non-display area adjacent to the display area; The display panel also includes: substrate; A thin-film transistor layer is disposed on the substrate and includes a trace portion disposed in the non-display area; A light-emitting layer is disposed on the side of the thin-film transistor layer away from the substrate; and A color filter layer is disposed on the side of the light-emitting layer away from the thin-film transistor layer, and includes a light-shielding portion and a plurality of filter portions disposed within the display area; A driving circuit is disposed in the non-display area, and the driving circuit includes a GOA driving circuit. The light-shielding portion includes a light-shielding sub-portion disposed in the non-display area and a black matrix sub-portion disposed in the display area, wherein the orthographic projection of the light-shielding sub-portion on the thin-film transistor layer at least covers the trace portion, and the material of the light-shielding sub-portion is the same as the material of the black matrix sub-portion; The black matrix sub-part includes a plurality of openings distributed within the display area, the plurality of filter parts include a plurality of color resist blocks distributed within the display area, the light-emitting layer includes a plurality of light-emitting pixels, and one opening is disposed corresponding to one light-emitting pixel, and one color resist block is disposed correspondingly within one opening, and at least partially covers the side of the black matrix sub-part away from the light-emitting layer.

2. The display panel according to claim 1, characterized in that, The plurality of color resist blocks include a red color resist block, a green color resist block, and a blue color resist block; Wherein, the CIE color coordinate x of the red color block is greater than or equal to 0.660 and less than or equal to 0.680, and the CIE color coordinate y of the red color block is greater than or equal to 0.310 and less than or equal to 0.320; The CIE color coordinate x of the green color block is greater than or equal to 0.202 and less than or equal to 0.206, and the CIE color coordinate y of the green color block is greater than or equal to 0.637 and less than or equal to 0.

641. The CIE color coordinate x of the blue color block is greater than or equal to 0.140 and less than or equal to 0.145, and the CIE color coordinate y of the blue color block is greater than or equal to 0.096 and less than or equal to 0.

098.

3. The display panel according to claim 2, characterized in that, The luminance factor of the red color block is greater than or equal to 16.2 and less than or equal to 16.8, the luminance factor of the green color block is greater than or equal to 37.7 and less than or equal to 39.1, and the luminance factor of the blue color block is greater than or equal to 11.7 and less than or equal to 13.

4.

4. The display panel according to claim 1, characterized in that, The curing temperature of the material of the color filter layer is less than or equal to 85°C.

5. The display panel according to claim 1, characterized in that, The orthographic projection of the light-shielding portion onto the substrate overlaps with the non-display area.

6. The display panel according to claim 1, characterized in that, The display panel further includes an adhesive layer and a cover plate disposed on the side of the color filter layer away from the light-emitting layer. The side of the adhesive layer close to the color filter layer covers the color filter layer, and the side of the adhesive layer away from the color filter layer is attached to the cover plate.

7. A method for manufacturing a display panel, characterized in that, The display panel includes a display area and a non-display area adjacent to the display area; The method for manufacturing the display panel includes the following steps: Provide substrate; A thin-film transistor layer is formed on the substrate, the thin-film transistor layer including a trace portion disposed in the non-display area; A light-emitting layer is formed on the side of the thin-film transistor layer away from the substrate; A color filter layer is formed on the side of the light-emitting layer away from the thin-film transistor layer. The color filter layer includes a light-shielding portion and a plurality of filter portions disposed in the display area. The light-shielding portion includes a light-shielding sub-portion disposed in the non-display area and a black matrix sub-portion disposed in the display area. The material of the light-shielding sub-portion is the same as that of the black matrix sub-portion, and the orthogonal projection of the light-shielding sub-portion on the thin-film transistor layer at least covers the trace portion. Forming a color filter layer on the side of the light-emitting layer away from the thin-film transistor layer includes the following steps: A light-shielding portion is formed on the side of the light-emitting layer away from the thin-film transistor layer. The light-shielding portion includes a black matrix sub-part formed in the display area and a light-shielding sub-part formed in the non-display area and integrally formed with the black matrix sub-part. The black matrix sub-part includes a plurality of openings distributed in the display area. Multiple light-filtering sections are formed on the side of the light-shielding section away from the light-emitting layer. Each of the multiple light-filtering sections includes multiple color resist blocks, and one of the color resist blocks is correspondingly disposed in one of the openings, and at least partially covers the side of the black matrix sub-section away from the light-emitting layer. The display panel also includes a driving circuit located in the non-display area, and the driving circuit includes a GOA driving circuit.

8. The method for manufacturing a display panel according to claim 7, characterized in that, The curing temperature of the light-shielding part and the plurality of light-filtering parts is less than or equal to 85°C.

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