Systems, apparatuses, articles, and methods for directing optical signals using luminescent defects in semiconductor materials

Abstract

An information processing system, apparatus, article, and method are configured to receive a first photon at a first switch, the first switch comprising a first region of semiconductor material and a first local defect disposed in the first region of the semiconductor material. The first local defect has a first defect calculation state. Based at least on the first defect calculation state of the first local defect, a second photon is guided to propagate via either a first output path communicatively coupled to the first local defect or a second output path communicatively coupled to the first local defect.

Description

[0001] Cross-references to related applications

[0002] This application claims the benefit of U.S. Application No. 62 / 903306, filed September 20, 2019, entitled “SYSTEMS, DEVICES, ARNICLES, AND METHODS TO DIRECT OPTICAL SIGNALS USING LUMINESCENT DEFECTS INSEMICONDUCTOR MATERIAL,” filed pursuant to 35 U.SC §119, which is incorporated herein by reference for all purposes. Technical Field

[0003] This disclosure generally relates to communication networks and information processors, and more specifically to systems, apparatus, articles, and methods for guiding signals based on the state of local defects in the bulk of semiconductor materials (e.g., light-emitting defects in purified silicon). Background Technology

[0004] Information is contained within the state of a physical system. The physical system can be a quantum system or a classical system. The system includes tangible devices, such as electronic components defined on or within one or more substrates. The physical system may include one or more photons that can interact with or otherwise communicatively couple with other physical components. One or more photons may be emitted from a tangible photon source, propagate through a communication channel, interact with an information processing device, and be measured by a detector. Summary of the Invention

[0005] This disclosure has multiple aspects, including:

[0006] • A method for selectively switching photons between output paths;

[0007] • Devices used to selectively switch photons between output paths (e.g., switches and switch networks).

[0008] • Methods and apparatus for providing superposition of photon states.

[0009] One aspect of this disclosure provides an information processing apparatus comprising a region of semiconductor material and a local defect disposed in a first region of the semiconductor material. The local defect supports a computational state selected from a first state, a second state, or a first superposition of the first and second states. The apparatus further includes a first input waveguide communicatively coupled to the local defect and a first output waveguide communicatively coupled to the local defect. The first output waveguide supports a first output path and guides photons emitted from the local defect into the first output waveguide and the first output path, at least according to the computational state of the local defect.

[0010] Another aspect of this disclosure describes an information processing method comprising receiving a first photon at a first switch, the first switch comprising a first region of semiconductor material and a first local defect disposed in the first region of semiconductor material. The first local defect has a first defect calculation state. The method further comprises: guiding a second photon to propagate via either a first output path communicatively coupled to the first local defect or a second output path communicatively coupled to the first local defect, based at least on the first defect calculation state of the first local defect.

[0011] Another aspect of this disclosure describes an information processing method comprising preparing a local defect disposed in the bulk of a semiconductor material in a defect calculation state. The defect calculation state is selected from a first defect basis state, a second defect basis state, or a superposition of a first defect basis state and a second defect basis state. The method further comprises: at least based on the defect calculation state of the local defect, guiding output photons to propagate through a first output path communicatively coupled to the local defect or a second output path communicatively coupled to the local defect.

[0012] Other aspects and exemplary implementations are shown in the accompanying drawings and / or described in the following description.

[0013] It should be emphasized that the present invention relates to all combinations of the above features, even if these features are stated in different claims. Attached Figure Description

[0014] The accompanying drawings illustrate non-limiting exemplary embodiments of the present invention.

[0015] Figure 1 This is a schematic diagram illustrating a part of a system including a processor-based device communicatively coupled to a dedicated information processor.

[0016] Figure 2 This is a schematic diagram illustrating an example defect and the body of a semiconductor material.

[0017] Figure 3 It shows including Figure 2The diagram illustrates an example of a communication device system with defects and a semiconductor material body.

[0018] Figure 4 It shows including Figure 2 and Figure 3 A schematic diagram of an example of an information processing device system for the components shown.

[0019] Figure 5 This is a schematic diagram showing a switch that includes defects and multiple paths.

[0020] Figure 6 This illustrates multiple paths coupled together, such as... Figure 5 A schematic diagram of the switch shown.

[0021] Figure 7 This is a flowchart illustrating an implementation of an example method for operating a communication device involving two or more photons.

[0022] Figure 8 This is a flowchart illustrating an implementation of an example method for operating a communication device, which includes a photon.

[0023] Figure 9 This is a flowchart illustrating an implementation of an example method for operating a communication device, which includes local defects.

[0024] Figures 10A to 10D This is a schematic diagram illustrating the interaction between photons and defects, where photons are selectively output from a first waveguide and a second waveguide.

[0025] Figures 11A to 11D This is a schematic diagram illustrating the interaction between photons and defects, where photons are selectively output via a first output path and a second output path in a waveguide.

[0026] Figures 11E to 11G This is a schematic diagram illustrating the interaction between photons and defects, where photons interacting with defects are delayed relative to other photons. Detailed Implementation

[0027] Specific details are set forth throughout the following description in order to provide a more thorough understanding of the invention. However, the invention may be practiced without these details. In other instances, well-known elements have not been shown or described in detail to avoid unnecessarily obscuring the invention. Therefore, the specification and drawings are to be regarded as illustrative rather than restrictive.

[0028] This disclosure discusses systems, apparatuses, articles, and methods with practical applications in information processing (e.g., computing, communication, quantum computing, and quantum communication). Information processing includes processing information in which the information is stored as the physical state of a physical (e.g., tangible) system. Quantum information processing includes processing information by using one or more quantum physical effects such as superposition, coherence, decoherence, entanglement, nonlocality, and teleportation.

[0029] Communication involves transferring classical or quantum information from one physical system to another via one or more signals describing the physical state of the physical system. Quantum communication involves processing information using one or more quantum physical effects or processes such as superposition, coherence, entanglement, nonlocality, teleportation, and measurement.

[0030] Communication can be used in computation. For example, the systems, apparatuses, articles, and methods described herein can use the state of moving information (e.g., photons) to influence the state of stationary information (e.g., defects in a semiconductor body), or the state of stationary information to influence the state of moving information. One or both of the stationary or moving information can be classical information.

[0031] Figure 1 A processor-based system 100 is illustrated, comprising one or more dedicated devices for processing information. System 100 includes a digital computer 102, which includes a control subsystem 104. Control subsystem 104 includes at least one processor 105. Digital computer 102 includes at least one bus 106 coupled to control subsystem 104. System 100 also includes at least one non-transitory computer and processor-readable storage device 108 and a network interface subsystem 110, both communicatively coupled to bus 106. Digital computer 102 includes an operator input subsystem 112 and an operator output subsystem 114 communicatively coupled to bus 106. Digital computer 102 also includes an analog device interface (ADI) subsystem 116 coupled to bus 106. Bus 106 can communicatively couple two or more subsystems in computer 102. In some implementations, some subsystems of system 100 may be omitted or combined. Some subsystems of system 100 may be remotely accessed via network interface subsystem 110.

[0032] At least one processor 105 can be any logic processing unit, such as one or more digital processors, microprocessors, central processing units (CPUs), graphics processing units (GPUs), application-specific integrated circuits (ASICs), programmable gate arrays (PGAs), programmable logic units (PLUs), digital signal processors (DSPs), network processors (NPs), etc. At least one processor 105 may include analog capabilities such as those found in DSPs, GPUs, analog-to-digital converters, or digital-to-analog converters.

[0033] The network interface subsystem 110 includes a communication circuitry system that supports bidirectional communication of processor-readable data and processor-executable instructions. The network interface subsystem 110 can use communication protocols (e.g., FTP, HTTPS, SSH, TCP / IP, SOAP plus XML) via network or non-network communication channels (not shown) (e.g., Internet, serial connection, parallel connection, etc.). Wireless connections, fiber optic connections, or combinations thereof, are used to exchange processor-readable data and processor-executable instructions.

[0034] The operator input subsystem 112 includes one or more user interface devices, such as a keyboard, pointer, numeric keypad, touch screen, or other interface devices for users or human operators.

[0035] In some implementations, the operator input subsystem 112 includes one or more sensors for the digital computer 102 or analog device 150. These sensors provide information characterizing or representing the environmental or internal state of the digital computer 102 and / or analog device 150. Furthermore, the output subsystem 114 includes one or more user interface devices, such as displays, lights, speakers, and printers.

[0036] Storage device 108 includes at least one non-transitory or tangible storage device. For example, storage device 108 may include: one or more volatile storage devices, such as random access memory (RAM); and one or more non-volatile storage devices, such as read-only memory (ROM). Storage device 108 may include solid-state memory, flash memory, magnetic hard disk, optical disk, solid-state drive (SSD), hard disk drive (HDD), network drive, other forms of computer and processor-readable storage media, or combinations thereof. Those skilled in the art will understand that storage device 108 can be implemented in various ways, such as non-volatile storage, volatile storage, and / or combinations thereof. Furthermore, a computer system may combine volatile and non-volatile storage, such as cache, solid-state hard disk drives, in-memory databases, etc.

[0037] Storage device 108 includes or stores processor-executable instructions and / or processor-readable data 120 associated with the operation of system 100. Executing the processor-executable instructions 120 and optionally reading the processor-readable data 120 causes at least one processor 105 and / or control subsystem 104 to perform or cause various methods and actions to be performed by system 100, digital computer 102, other systems or devices, or combinations thereof. For example, via network interface subsystem 110 or ADI subsystem 116. The processor-executable instructions and / or processor-readable data 120 may include, for example, a basic input / output system (BIOS) (not shown), an operating system 122, peripheral drives (not shown), server instructions 124, application instructions 126, calibration instructions 128, dedicated information processor instructions 130, communication channel instructions 132, environment instructions 134, and data 136. A portion of storage device 108 or the processor-executable instructions and / or processor-readable data 120 may be included in an article of manufacture including a non-transitory processor-readable storage device.

[0038] Exemplary operating system 122 includes, for example Operating system and Operating system. Server instructions 124 include processor-executable instructions and / or processor-readable data to interact with processor-based devices outside system 100 across a network via network interface subsystem 110. In some implementations, processor-executable server instructions 124 include processor-executable instructions and / or processor-readable data that, when executed by a processor, schedule jobs for digital computer 102 or analog device 150. Application instructions 126 include processor-executable instructions that, when executed, cause system 100 to perform one or more actions associated with an application, such as performing computations on digital computer 102 and / or analog device 150.

[0039] Calibration instruction 128 includes processor-executable instructions that, when executed by a processor (e.g., processor 105), cause the processor to calibrate simulation device 150 to obtain calibrated values ​​and store the calibrated values ​​of simulation device 150. Calibration can compensate for variations in components of simulation device 150. Components included in or on simulation device 150 may have inter-component variations in operating parameters. These variations in operating parameters may change over time or differ from expected or ideal component parameters. Calibration instruction 128, when executed by the processor, enables the testing and correction of these inter-component variations, time variations, and / or differences from expected or ideal component parameters.

[0040] The dedicated information processor instructions 130 include processor-executable instructions that, when executed by a processor (e.g., processor 105), cause the processor to control, initialize, write, manipulate, read, and / or otherwise transmit to / from the analog device 150. The dedicated information processor instructions 130 can partially implement the methods described herein (e.g., refer to...). Figures 7 to 9 And / or utilize the control subsystem included in the simulation device 150.

[0041] The communication channel instruction 132 includes processor-executable instructions that, when executed by a processor (e.g., processor 105), cause the processor to initialize, control, and read information from a communication channel or associated means (e.g., a source or readout means). The communication channel instruction 132 can partially implement the methods described herein (e.g., refer to...). Figures 7 to 9 ).

[0042] Environmental instructions 134 include processor-executable instructions and / or processor-readable data that, when executed by a processor (e.g., processor 105), cause the processor to control and monitor, for some or all, aspects of a prescribed and potentially dedicated environment of the simulation device 150. Examples of environmental instructions 134 include instructions that, when executed, monitor and control the temperature and magnetic fields of a dedicated information processor 154 affecting the simulation device 150. Environmental instructions 134 may create a thermal distribution (e.g., some or all of the temperature values ​​of the simulation device 150 having temporal or spatial correlation). Environmental instructions 134 may partially implement the methods described herein.

[0043] Data 136 may include processor-readable information or data used, obtained, created, or updated by the operation of system 100. For example, the data may include one or more logs from digital computer 102 and analog device 150. Data 136 may include processor-readable data including parameters for the operation of system 100. Data 136 may include processor-readable data associated with (e.g., created, referenced, or modified by) a processor executing processor-executable instructions (e.g., server instructions 124, application instructions 126, calibration instructions 128, dedicated information processor instructions 130, and environment instructions 134). Data 136 may include processor-readable data corresponding to energy states (e.g., local degrees of freedom) associated with luminescent defects or transitions (e.g., energy differences) between such states. Data 136 may include processor-readable information recording the state of photons or defects.

[0044] The Analog Device Interface (ADI) subsystem 116 includes a communication circuitry system supporting bidirectional communication between the digital computer 102 and the analog device 150. In some implementations, the inputs or outputs from the analog device 150 are digital, and the intermediate states within the analog computer are analog. In some implementations, the ADI subsystem 116 interacts with the environment subsystem 152 of the analog device 150. In some implementations, the ADI subsystem 116 interacts with a dedicated information processor 154 through one or more subsystems of the analog device 150 (e.g., subsystems 156 and 158). In various implementations, the ADI subsystem 116 may include a waveform digitizer (e.g., an ALAZARTECH ATS9440, 4-channel 14-bit 125 MS / s card, or an ALAZARTECH ATS9360, 1-channel 12-bit 1.8 GS / s PCI card, from Alazar Technologies, Pointe-Claire, Quebec, Canada), and an infrared photon detector (e.g., a SINGLE QUANTUM EOS multi-channel SNSPD photon detector from SingleQuantum, Delft, South Holland, Netherlands, or an ID230 NIR photon detector from ID Quantique SA, Carouge, Geneva, Switzerland). This document at least in Figure 2 Other detectors are described there.

[0045] The simulation device 150 includes an environmental subsystem 152 that provides a prescribed environment for a dedicated information processor 154 in response to the execution of an environmental command 134. Aspects of the prescribed environment may include one or more of, for example, humidity, air pressure, vibration, magnetic field, temperature, and electromagnetic field. In some implementations, the environmental subsystem 152 provides a low magnetic field around the dedicated information processor 154. In some implementations, the environmental subsystem 152 provides a time-invariant magnetic field around the information processor 154. In some implementations, the environmental subsystem 152 provides a time-varying or pulsed magnetic field. In some implementations, the environmental subsystem 152 maintains the information processor 154 at a low temperature through one or more cooling units and / or cold sources. For example, the information processor 154 may be maintained at close to 4K. Other useful temperatures for the information processor 154 include temperatures ranging from approximately 1 mK to approximately 77 K. In some implementations, the environmental subsystem 152 maintains the processor 154 in a range from approximately 1.5 K to approximately 4 K. In some implementations, the environmental subsystem 152 maintains the environment surrounding the information processor 154 at a temperature of approximately 290 K. In some implementations, the environmental subsystem 152 includes vibration isolation components, such as dampers in a cooling unit. In some implementations, the environmental subsystem 152 provides the dedicated information processor 154 with a low humidity and constant atmospheric pressure (e.g., a stable vacuum) environment.

[0046] The dedicated information processor 154 can be a quantum device. A quantum device is a fabrication or structure in which quantum mechanical effects are significant and / or dominant. Quantum devices (e.g., superconducting circuits and spintronic circuits) include circuits in which current transport is dominated by quantum mechanisms. Superconducting circuits utilize quantum physical phenomena such as tunneling and flux quantization. Spintronic circuits utilize the physical property of spin (e.g., electron spin) as a resource for receiving, processing, storing, transmitting, or outputting information. Quantum devices can be used in measuring instruments, computing machines, etc. Examples of computing machines include components of classical and quantum computers. Examples of quantum communication devices include switches, sources, etc.

[0047] The analog device 150 includes a control subsystem 155. The control subsystem may include an input system 156, an output system 158, or both. A dedicated information processor input subsystem 156, in response to processor-executable instructions, writes to or manipulates information stored in the information processor 154. The input subsystem 156 may be formed on the same substrate as the information processor 154, physically coupled to the information processor 154, communicatively coupled to the information processor 154, or a combination of the foregoing. In some implementations, the input subsystem 156 includes a digital-to-analog converter. The input subsystem 156 may include one or more of an optical input subsystem, an electric field subsystem, a magnetic manipulation subsystem, a mechanical subsystem, a cryogenic subsystem, associated or included components, etc. This document refers at least to... Figure 2 An example of a subsystem is described.

[0048] Input subsystem 156 can encode processor-readable information, including classical and quantum information, and transmit that information to information processor 154. Input subsystem 156 may include a light source for applying narrow-spectrum or broadband light (e.g., pulsed light) to portions of the dedicated information processor 154. In some implementations, input subsystem 156 includes an electromagnet for providing a magnetic field to portions or all of the information processor 154. In some implementations, input subsystem 156 includes one or more transmitters (e.g., wires, antennas, coils) to selectively provide control pulses to information processor 154 for one or more times, durations, and frequencies. An example of a pulse generator is the PSPL10070A, available from Tektronix Corporation, Beaverton, Oregon, USA. TM Generator. In some implementations, the transmitter is on the information processor 154. In some implementations, the transmitter is located close to and coupled to the information processor 154. Microwave, radio frequency (RF), and / or electromagnetic control pulses can be used. In some implementations, the input subsystem 156, together with the control subsystem 104, is used to perform electron paramagnetic resonance (EPR) and / or nuclear magnetic resonance (NMR) on the electron spins and / or nuclear spins in the dedicated information processor 154 and / or the input subsystem 156. In some implementations, a bulk EPR or NMR cavity surrounds the dedicated information processor 154.

[0049] In some implementations, the input subsystem 156 includes wires electrically (e.g., current-grounded) coupled to one or more electrodes or electrode pairs included in the information processor 154. In some implementations, the input subsystem 156 applies DC and / or AC currents to electrically bias and control the information processor 154 from the input subsystem 156. For example, the input subsystem 156 can inject or remove charge carriers (e.g., electrons and holes) from one or more portions of the information processor 154. Alternatively, in some examples, the input subsystem 156 provides a static or oscillating electric or magnetic field. The DC current and voltage can be provided by a low-noise power source, such as a battery-powered voltage source. The current and voltage can be applied via a resistive voltage divider / combiner. Any waveform generator or signal generator can be used (e.g., the TELEDYNE LECROY ARBSTUDIO 1104, available from Teledyne Technologies, Thousand Oaks, California). TM A waveform generator applies AC current and voltage to a portion of the information processor 154. A signal generator (e.g., KEYSIGHT E8267D) can be used. TM A microwave vector signal generator applies AC current and voltage for electron spin resonance (ESR) to a portion of the information processor 154. NMR control can be used, and NMR control includes the application of a vector signal generator (e.g., KEYSIGHT MXG N5182ARF) to the information processor 154. TM The signal is generated by a vector signal generator. Both signal generators are available from Keysight Technologies in Santa Clara, California, USA. Lines leading to and / or entering the information processor 154 (including, for example, vector signal generators) Figure 1 The lines shown may include filters, such as low-pass filters, band-pass filters, and high-pass filters.

[0050] Figure 1The analog device 150 shown includes a dedicated information processor output subsystem 158 for reading from at least an information processor 154. The output subsystem 158 may be formed on the same substrate as the information processor 154, physically coupled to the information processor 154, communicatively coupled to the information processor 154, or a combination of the foregoing. In some implementations, the output subsystem 158 includes one or more analog-to-digital converters, amplifiers, filters, etc. In some implementations, the output subsystem 158 includes one or more optical readout devices. The optical readout device (e.g., a photodetector) detects photons generated by or within the information processor 154 or measures the state of an optical structure included on or within the information processor 154. The optical structure, such as a resonator, supports one or more photon modes. Examples of optical structures are described herein. In some implementations, the optical readout device distinguishes the presence and absence of one or more photons in an optical resonator. In some examples, the optical readout device detects the frequency shift of one or more photon modes of the optical structure. An optical readout device can read the state of one or more optical resonators.

[0051] The state of the optical structure can depend on the occupancy of specific states of light-emitting defects, such as those coupled to the optical structure. Examples of light-emitting defects are described herein. In some implementations, the output subsystem 158 includes one or more photodetectors, such as the SINGLE QUANTUM EOS multi-channel SNSPD photodetector from Delft, Netherlands, or the ID230 NIR photodetector from ID Quantique SA, Carouge, Geneva, Switzerland.

[0052] In some implementations, the output subsystem 158 includes one or more photodetectors, such as the APD110C or PDA20CS2 InGaAs avalanche photodetectors available from Thorlabs Canada ULC in Saint-Laurence, QC, Canada; on-chip superconducting photodetectors described in Akhlaghi et al., 2015 Nature Communications 6: 8233; various detectors described in Eisaman et al., 2011 Rev. Sci. Instrum. 82, 071101; or the ADN3010-11 detector from Analog Devices, Norwood, Massachusetts, USA.

[0053] In some implementations, the digital computer 102 uses an output subsystem 158 to perform logical operations on information in the information processor 154. For example, the output subsystem 158 can be used to perform measurements on quantum states stored in or on the information processor 154, as at least see below. Figure 7 and Figure 9 .

[0054] In some implementations, the output subsystem 158 performs a single read of the state of the components in the information processor 154. In some implementations, the output subsystem 158 performs the read of the state of the components in the information processor 154 at a speed of gigahertz.

[0055] In some implementations, the output subsystem 158 receives (e.g., receives, requests, and receives) quantum nondestructive measurement readouts about the state of components in the information processor 154. In some implementations, the output subsystem 158 performs readouts about the state of one or more auxiliary photons that have interacted with at least one component in the information processor 154.

[0056] In some implementations, the analog device 150 is communicatively coupled to a communication channel 170, such as a classical communication or quantum information channel. Channel 170 can be used to send information (e.g., quantum information, classical information) to and from information processor 154. Channel 170 can communicatively couple information processor 154 to one or more information processors, such as a second instance of information processor 154. Channel 170 can also communicatively couple information processor 154 to another device, such as a photon generator.

[0057] In some implementations, certain portions of the digital computer 102 and analog device 150 are omitted to create a smaller information processing device including an information processor 154 and a channel 170. In some implementations, certain portions of the digital computer 102 or analog device 150 are communication devices. For example, portions of the digital computer 102 or analog device 150 can be used to implement, for example... Figure 5 The switch shown.

[0058] Figure 2 This is a schematic diagram showing a portion of device 200. The shown portion of device 200 includes a substrate of semiconductor material, a body of semiconductor material or semiconductor material 202, and an exemplary defect 204 disposed (e.g., created, formed, implanted, located, placed, positioned) within semiconductor material 202. Device 200 can operate as an information processor, such as a quantum information processor, an optical processor, an optical device, and a communication device.

[0059] In some implementations, semiconductor material 202 includes silicon. Semiconductor material 202 may include native silicon. Semiconductor material 202 may include other substances, such as silicon carbide or silicon germanium. In some implementations, semiconductor material 202 includes isotopically purified paramagnetic silicon or so-called silicon vacuum.

[0060] One way to improve the performance metrics of a physical system (e.g., for a system such as device 200, a longer coherence time) is to use semiconductor materials that have been treated to remove most of the nonparamagnetic isotopes (e.g., silicon-29) that broaden spectral measurements. Enriched or purified silicon has been treated to remove some to almost all non-zero spin isotopes, such as silicon-29. Purified silicon includes materials rich in various levels of silicon-28 (e.g., 99%, 99.9%, and 99.99%). Purified silicon includes silicon-28-rich materials. Purified silicon includes silicon with spectral linewidths at least ten to one hundred times sharper than native silicon. These defects illustrate examples of linewidth narrowing of approximately 50 (W-center) and 200 (G-center) times in purified silicon.

[0061] Semiconductor bodies primarily comprising purified silicon can be manufactured or purchased. Production technologies involve using purified silicon compounds (e.g., by isotope, by magnetic properties) produced through enrichment methods such as gas centrifugation (e.g., silicon tetrafluoride), magnetic mass separation, or ion exchange as input materials. The purified gaseous silicon compound can be part of the purification or production process. Such compounds include purified silicon tetrafluoride (SiF4) or purified silane (SiH4).

[0062] Methods such as molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) can be used to create bulk, crystal, substrate, and wafer forms of purified silicon. Available isotope-purified silicon includes removing silicon-29 to levels of tens, hundreds, thousands, or tens of thousands of parts per million. Suitable semiconductor material 202 can be purchased from Isoflex USA, an isotope supply company located in San Francisco, California, USA.

[0063] In some implementations, semiconductor material 202 is an epitaxial layer of isotopically purified silicon grown on top of a natural silicon wafer. The thickness of semiconductor material 202 can be on the order of micrometers, while the thickness of the natural silicon wafer can be on the order of millimeters. In some implementations, semiconductor material 202 is a thin silicon layer grown or deposited on top of a substrate including insulating materials such as silicon oxide, sapphire, silicon nitride, etc. Here, silicon can refer to natural silicon, purified silicon, or silicon alloys such as silicon-germanium mixtures, the components of which can be isotopically purified.

[0064] Defect 204 is disposed within the bulk of semiconductor material 202. The bulk of semiconductor material 202 is defined by multiple interfaces (e.g., faces, sides, or edges). In some implementations, defect 204 is disposed deep or far within the bulk or mass of semiconductor material 202. In at least one implementation, defect 204 is disposed at or near a shallow interface, for example, at a distance equal to or less than 10 nanometers from one of the multiple interfaces. In some implementations, defect 204 is disposed at a distance greater than 10 nanometers from one of the multiple interfaces. In some implementations, defect 204 is eerily coupled to an optical structure (e.g., a resonator, waveguide, lens). Figure 2 (Not shown in the image). In some implementations, defect 204 is located at a distance greater than 10 nanometers from each of the multiple interfaces. In some implementations, defect 204 is located at a distance greater than 30 nanometers from each of the multiple interfaces. In some implementations, defect 204 is located at a distance between 30 nanometers and 500 nanometers from the interfaces of the multiple interfaces. In some implementations, defect 204 is located at a distance between 10 nanometers and 2 micrometers from the interface of semiconductor material 202. Defect 204 can be located at a distance between 30 nanometers and 1 micrometer from each interface.

[0065] Another defect 204 enters the body 202, and another defect 204 is away from the charge that may reside on the interface of the body of the semiconductor material 202.

[0066] Defect 204 and similar modes can be formed by one or more atoms or atomic vacancies (e.g., omitted silicon atoms), and these atoms locally occupy one or more reproducible specific relative positions with respect to each other and to the lattice of semiconductor material 202. The crystalline pattern of silicon atoms can allow a type of defect, defined by its chemical composition and configuration, to have many different equivalent orientations relative to the lattice; however, these different orientations still attributed to the same defect type. The type of defect and the implantation method vary depending on the implementation. The constituent elements of defect 204 can be controllably implanted into semiconductor material 202 using silicon industry-standard ion implantation techniques. One implantation process is described in U.S. Patent No. 3,434,894.

[0067] In some implementations, device 200 includes a defect 204 disposed within semiconductor material 202. Defect 204 can be a point defect, localized defect, or localized defect in the semiconductor material 202, such as a silicon lattice. Localization can refer to a defect whose atomic composition or configuration differs from that of a pure semiconductor at a distance of less than 5, 3, or 2 unit cell lengths, wherein the lattice constant that does not disrupt the lattice defines the cell length. For example, at least one interstitial silicon atom and / or at least one vacancy (without silicon atoms) can define a defect. A defect can cause deformation (e.g., strain) in adjacent unit cells beyond the size of the defect. The defect may support a wave function (e.g., an electron or a hole) that extends beyond the size of the defect as defined by its atomic composition or configuration.

[0068] In some implementations, defect 204 is a substitution defect in which a lattice site in the semiconductor material 202 contains an atom different from the atoms found in adjacent lattice sites. Defect 204 can also be a vacancy; an empty lattice site in the crystal that will be occupied.

[0069] In some implementations, defect 204 is an interstitial defect in which an atom occupies a non-lattice site. Defect 204 can be a Frenkel defect, in which an atom moves into an interstitial site and creates a vacancy. That is, a combination of interstitial and vacancy defects. Here, the atom includes at least one atom, ion, or molecule, but the defect remains localized.

[0070] Defect 204 or more defects can be damage centers, such as radiation damage centers. Defect 204 in semiconductor material 202 can be constructed using one of a variety of methods. One class of methods involves applying radiation to semiconductor material 202. In some implementations, applying an electron beam to semiconductor material 202 generates defect 204. Following radiation, semiconductor material 202 can be annealed at a specified temperature. For example, treating silicon bulk with an electron beam and annealing at around 100°C generates G-centers. The temperature varies depending on the defect; for example, methods for generating T-centers may include annealing at 450°C.

[0071] Defect 204 can be formed by implanting carbon into semiconductor material 202. In some implementations, defect 204 is constructed by implanting electrons, neutrons, protons, or silicon or other atoms into semiconductor material 202 that has been pre-contaminated with carbon.

[0072] Semiconductor material 202 may be a wafer comprising silicon. The wafer may be a silicon-on-insulator wafer, such as a 220 nm thick wafer covered with a silicon dioxide insulator. The silicon may be intrinsic silicon doped with substitutional donors or acceptors. The wafer may be subjected to carbon ion beams with beam energies between 5 keV and 100 keV (e.g., 20 keV, 30 keV, 40 keV). The wafer may be processed with other carbon ions of the same or different (e.g., lower) energies.

[0073] Optionally, the semiconductor material 202 can be annealed to repair damage during ion implantation. For example, the semiconductor material 202 can be heated to high temperatures (e.g., approaching or exceeding 1000°C) on a timescale of seconds to minutes using a furnace, heater, lamp, or laser. The semiconductor material 202 is then cooled at a slow rate to prevent the effects of thermal shock (e.g., breakage). Rapid thermal annealing (RTA) and rapid thermal processing (RTP) in semiconductor manufacturing are suitable. Protons can be implanted into the semiconductor material 202 using a beam two orders of magnitude higher than that of carbon ions (e.g., 2 MeV).

[0074] In some implementations, defect 204 is a “luminescent defect,” which can also be labeled as a “luminescent impurity,” a “luminescent acceptor,” or a “luminescent donor” in the appropriate context. A luminescent defect comprises a pair of energy states, wherein the decay process from a first state to a second state of the first pair of energy states has a sufficient characteristic probability (e.g., 0.1%) to generate at least one optical photon. The characteristic probability of emitting at least one optical photon is the likelihood of emitting an optical photon from defect 204 when defect 204 is located within the bulk of an unstrained semiconductor body 202. The probability of emitting an optical photon from defect 204 when defect 204 is not in a bulk-like unstrained semiconductor environment can differ significantly from its characteristic optical photon emission probability by effects that can influence the local density of the state, such as the Purcell effect. Optical photons are photons with wavelengths in the ultraviolet (UV), visible (VIS), or infrared (IR) bands (i.e., wavelengths between approximately 10 nm and 100 μm).

[0075] Defect 204 can have a pair of energy states, wherein the decay process from the first state of the first pair of energy states to the second state of the first pair of energy states has a sufficient photon generation probability to produce an optical photon without a phonon (e.g., a quantized quasiparticle of vibrational energy). The transition energy of the optical photon is called the zero-phonon line (ZPL) transition energy.

[0076] Defect 204 can have a type defined by its chemical composition and configuration and / or by physical properties such as characteristic optical photon energies (e.g., ZPL transition energies). The characteristic optical photon energies and typical photon generation probabilities of a defect can be modified by the constituent atomic isotopes of the luminescent defect and / or the environment, including but not limited to temperature, strain, pressure, electromagnetic fields, etc. It will be apparent to those skilled in the art that the characteristic transition energies and / or photon generation probabilities of one type of luminescent defect modified by the environment and / or isotopic composition of the luminescent defect do not constitute a different type of luminescent defect. Optical transitions may be affected by splitting as described herein.

[0077] Examples of localized luminescent defects include so-called C centers, F centers, G centers, I3 centers, P centers, W centers, X centers, etc., which include equivalent or isoelectronic substitutions or replacements. Examples of luminescent centers include so-called T centers, Ga1 centers, and Al1 centers, etc. Examples of luminescent centers include so-called I centers, M centers, and NC centers, etc. Each listed center can be labeled with a short or long identifier, such as "T" or "T center".

[0078] For clarity, various aspects of these centers will be described before returning to the description of their use. The C center is considered to comprise both carbon and oxygen, and is known in the so-called L-band (1565 nm–1625 nm) at 1570 nm (0.789 eV, 6364 cm⁻¹). -1 ZPL emission is present near 1304nm. The L-band is one of five designated telecommunications bands covering 1260nm to 1625nm, where the fiber has low loss. The F-center is at 1304nm (0.9508eV, 7668cm). -1 It emits light near the O band. The G center is at 1280 nm (0.969 eV, 7823 cm⁻¹). -1 It exhibits emission near the O band. The center of I3 is at 1041 nm (1.041 eV, 8396 cm⁻¹) in the near IR band. -1 ZPL emission is observed near the 1616 nm (0.767 eV, 6186 cm⁻¹). The P-center is located at 1616 nm (0.767 eV, 6186 cm⁻¹). -1 It emits light near the L-band. The W-center is at 1218 nm (1.018 eV, 8210 cm⁻¹). -1 Characteristic emission is observed near the IR (near-IR). The X-center is at 1088 nm (1.14 eV, 9195 cm⁻¹). -1 The area near the ) exhibits a characteristic ZPL transition.

[0079] The T-center is believed to consist of two carbon atoms and one hydrogen atom, and has a voltage of approximately 935.1 meV (7542.0 cm⁻¹). -1The characteristic ZPL optical transition energy of Ga1 defects at 1416 nm (875 meV, 7057.4 cm⁻¹) is shown. -1 Al1 (aluminum-) defects exhibit luminescence near the E-band. At 1483 nm (836 meV, 6742.8 cm⁻¹), the light emission is observed. -1 These defects exhibit luminescence near the S-band. They are believed to have a similar chemical composition and configuration to the T-center, but are characterized by their prescribed properties.

[0080] The I center is at 1285nm (0.965eV, 7783cm). -1 The M-centers exhibit ZPL transitions near the O-band. The M-centers comprise localized defects in the silicon lattice (761 meV, near IR). Five NC-centers (also known as lines N1, N2, N3, N4, and N5) possess characteristic ZPL transition energies close to 746 meV, and each center is considered to have a distinct chemical and / or structural configuration. Further examples of defects with optical transitions are included in Gordon Davies, 1989 Physics Reports 176:83–188.

[0081] The types and genera of defects described herein have one or more equivalents known to those skilled in the art. These equivalents include equivalent or isoelectronic substitutions or replacements of one or more atoms included in the defect. Isoelectronic substitutions involve the same number of valence electrons and include elements from the same period; for example, germanium may substitute for carbon in a defect, or lithium may substitute for hydrogen. Isoelectronic substitutions include charged atoms from adjacent periods. Isoelectronic substitutions affect the mechanical and electronic structure of the defect, and substitutions can be used to alter vibrational or optical interactions with the defect. Optical transitions may be affected by splitting as described herein.

[0082] In some implementations, device 200 includes acceptor defects or acceptor sites within semiconductor material 202 to receive electrons. A suitable defect for acceptor sites is boron. Acceptors may include acceptors from Group III (13), such as boron, aluminum, gallium, and indium.

[0083] In some implementations, device 200 includes donor defect sites within silicon material to donate electrons. A suitable defect for the donor site is phosphorus. The donor may include donors from group V(15), such as phosphorus, arsenic, bismuth, and antimony.

[0084] Device 200 may include optical structures (not shown). The optical structures may include resonators, optical resonators, waveguides, optical couplers, optical cavities, other arrangements of refractive and reflective materials. In some implementations, defect 204 is transiently coupled to one or more optical structures.

[0085] Device 200 may include an optical input subsystem comprising one or more optical components, such as light source 206. The optical components are operable, for example, in response to the execution of processor-executable instructions, to selectively apply light to defect 204. Light source 206 may apply light in a pulsed manner. The optical components may apply light to defect 204 at least at a first frequency. The first frequency corresponds to the energy difference between (e.g., near, in) a pair of computational states of defect 204. Light source 206 may be communicatively coupled to processor 105 in system 100 and operate in response to processor 105 executing processor-executable instructions. The optical input components (e.g., light source 206) may be disposed in, on, near, or at a distance from semiconductor material 202. Figure 2 The relative positions and orientations of the components shown have been largely chosen for illustrative purposes, such as ensuring that the light from the light source 206 is not collinear with the magnetic field or perpendicular to the electric field.

[0086] Device 200 may include one or more electric field subsystems, which include electrical components such as electrodes 208. The electric field subsystems may function, for example, in response to the execution of processor-executable instructions, to apply an electric field of at least a first strength to the semiconductor material 202 or the defect 204. The electric field may include a gradient. That is, the electric field subsystems may be operable to selectively alter the electric field incident on the semiconductor 202. The electric field subsystems influence changes in the energy eigenstates of the defect 204. The electric field subsystems may power components on or near the semiconductor material 202. The electric field subsystems may apply pulsed electrical manipulation to the defect 204.

[0087] Device 200 may include one or more magnetic manipulation subsystems, each including one or more magnetic input components, such as coil 210. The magnetic manipulation subsystems can influence changes in the energy eigenstates of defect 204. The magnetic input components are operable to selectively apply magnetic fields to semiconductor material 202 and / or defects 204 disposed within semiconductor material 202. The magnetic field may be oriented relative to the lattice orientation of semiconductor material 202 or multiple defects such as defect 204. The magnetic field may be static or variable relative to time or position within semiconductor material 202. In some implementations, the magnetic input components include large-aperture superconducting magnets. Processor 105 in system 100 may instruct coil 210 to apply a magnetic field to semiconductor material 202 in response to executing processor-executable instructions.

[0088] The magnetic manipulation subsystem included in device 200 may include at least one radio frequency input component, such as antenna 212, a pair of antennas, etc., which is selectively operable to apply radio frequency pulses to semiconductor material 202 and / or defect 204. Processor 105 may instruct the magnetic manipulation subsystem (e.g., instructing coil 210 and antenna 212) to flip the electron spin or nuclear spin associated with defect 204.

[0089] The processor 105 in system 100 can instruct the magnetic input components and radio frequency input components to perform magnetic resonance control, such as NMR and / or ESR, on defect 204 or multiple defects. For example, coil 210 can apply a field strength B0 to defect 204 and a radio frequency pulse to antenna 212 at a frequency proportional to the product of field strength B0 and the gyromagnetic ratio γ of the spin of defect 204, and adjust for additional spin interactions in device 200.

[0090] Device 200 may include a mechanical subsystem comprising one or more mechanical input components. An example of a mechanical input component is an actuator 214. Actuator 214 may be paired with a support or bracket (not shown) disposed on an opposite side of semiconductor material 202. The mechanical input component may be operable, for example, in response to the execution of processor-executable instructions, to selectively alter (e.g., apply, remove) strain in at least one direction of semiconductor material 202. Thus, the mechanical subsystem can influence changes in the energy eigenstates of defect 204 through strain in semiconductor material 202. The mechanical input device may apply strain locally within or across semiconductor material 202. The mechanical input component may be disposed within semiconductor material 202 or physically coupled to the exterior of semiconductor material 202. The mechanical subsystem may include one or more microelectromechanical system (MEMS) components that alter strain in semiconductor material 202 in response to the execution of processor-executable instructions. The MEMS may be powered by an electric field subsystem. The mechanical subsystem may include one or more piezoelectric components.

[0091] Device 200 may include one or more cryogenic subsystems, such as cryogenic subsystem 216. Cryogenic subsystem 216 is selectively operable to alter the thermal distribution of the semiconductor material 202 (e.g., temperature, temperature gradient, temperature varying with space or time) and influence changes in the energy eigenstates of the defect 204. Cryogenic subsystem 216 may include one or both of heater 217 or cooler 218. Cryogenic subsystem 216 may be operable, for example, in response to executing processor-executable instructions, to selectively heat, cool, or create a thermal gradient in the semiconductor material 202.

[0092] In various implementations, an example of device 200 operates as an information processor including one or more input subsystems or devices communicatively coupled to semiconductor material 202 or defect 204. One or more input subsystems or devices may be physically coupled to semiconductor material 202. For example, a quantum input subsystem may cover semiconductor material 202, be disposed near semiconductor material 202, or be disposed within semiconductor material 202.

[0093] Optical input components, electrical input components, magnetic input components, etc., may cover (including those located underneath) a portion of the semiconductor material 202, or may be structures defined within the semiconductor material 202. One or more output subsystems or readout devices are communicatively and / or physically coupled to the semiconductor material 202 or defect 204. For example, a photon detector may be positioned like a light source 206. At least regarding... Figure 4 Other examples of readout devices and detectors are described.

[0094] Figure 3 A portion of a communication device 300 is schematically shown. The shown portion of the communication device 300 includes a body of semiconductor material 202 and a defect 204 disposed within the semiconductor material 202. The device 300 includes multiple waveguides, such as a first waveguide 302 and a second waveguide 304. The device 300 can operate as an information processor, such as a quantum information processor, an optical processor, an optical device, and a communication device. For example, the device can be a channel splitter filter.

[0095] The first waveguide 302 includes a first end 306 and a second end 308. The second waveguide 304 includes a first end 310 and a second end 312. The first waveguide 302 passes through a defect 204 separated by a distance 314. The second waveguide 304 is separated from the defect 204 by a distance 316. Waveguides 302 and 304 are coupled through the defect 204, for example, evanescent coupling.

[0096] The communication device 300 can operate as an optical communication device used in communication or information processing, referred to as a channel splitter filter. Given a signal propagating along a bus or a first waveguide, the channel splitter filter picks or selects the signal in certain states of the filter or signal and reroutes or splits the signal into a second or branch waveguide. Photons propagating through waveguide 302 can be split into waveguide 304 depending at least on the state of defect 204. For example, photons propagating from the first end 306 of the first waveguide 302 can be selectively split into the second waveguide 304 and propagate toward the second end 312. Photons can be absorbed and (re)emitted. Such emitted photons can be considered the same photons that were absorbed.

[0097] Figure 4A portion of a communication device 400 is schematically shown. The shown portion of the communication device 400 includes a body of semiconductor material 202, defects, a first waveguide 302, and a second waveguide 304. The device 400 can be operated as an information processor, such as a quantum information processor, an optical processor, an optical device, and a communication device.

[0098] The apparatus 400 also includes a photon source 402 communicatively coupled to the first waveguide 302. The photon source 402 can generate photons in a predetermined state to propagate through the first waveguide 302 and across the defect 204. The photons can be measured at a photon detector 404 (e.g., communicatively and physically coupled to the first waveguide 302). The photon detector can be coupled to a second waveguide 304.

[0099] The apparatus 400 may also include a measuring device 406 communicatively coupled to the defect 204. The measuring device 406 can measure the state of the defect 204. See at least [reference needed] herein. Figure 7 and Figure 9 Measurement description at the location. Defect 204 is coupled to waveguide 302, waveguide 304 and measuring device 406; spaced at distances of 314, 316 and 408 respectively.

[0100] Figure 3 and Figure 4 This illustrates one example of the spatial modes through which photons can take, i.e., one waveguide or another. Other paths are possible, including different polarizations, time-bin coding, frequency modes, Fock states, etc. Two paths can occupy the same waveguide.

[0101] Figure 5 A portion of a communication device or switch 500 is schematically shown. Switch 500 includes a region 502 of semiconductor material, such as a portion of semiconductor material 202, and a defect 204 disposed in the region 502 of semiconductor material.

[0102] Switch 500 includes an input path 504 communicatively coupled to defect 204. Switch 500 includes a first output path 506 communicatively coupled to defect 204 and a second output path 508 communicatively coupled to defect 204. Photons emitted from defect 204 can be guided to either the first output path 506 or the second output path 508, depending at least on the computational state of defect 204. Photons can be guided to either the first output path 506 or the second output path 508, depending at least on the computational state of defect 204 and the state of the photons.

[0103] Figure 6A portion of a communication device or network 600 is schematically shown. Network 600 includes multiple switches 500 (e.g., switch 500-1, switch 500-2) coupled by multiple paths (e.g., path 506-1, path 506-2). As shown, network 600 is a tree with a uniform branch ratio of 2, is balanced, and is not jagged. In some implementations, networks similar to network 600 are unbalanced, jagged, and have non-uniform branch ratios. In some implementations, network 600 is a different graph, such as a directed acyclic graph.

[0104] Network 600 includes multiple switches. Switch 500-1 is communicatively coupled to switch 500-2 via output path 506-1. Switch 500-1 is communicatively coupled to switch 500-3 via output path 508-1. Switch 500-2 is communicatively coupled to switches 500-4 and 500-5. Switch 500-3 is communicatively coupled to switches 500-6 and 500-7.

[0105] In some implementations, network 600 can operate as a demultiplexer. A demultiplexer is an electronic device that directs an output signal to one of a plurality of output paths in response to a received input signal.

[0106] Figure 7 , Figure 8 and Figure 9 An exemplary method for operating a communication device such as device 300 or switch 500, or an information processor such as dedicated information processor 154 or device 200, is shown. Figure 7 Methods related to two types of photons—input photons and output photons—are described. Figure 8 A method is described that relates to a photon, for example, an input photon is an output photon, the output photon has the state of the input photon, and the state of the output photon depends at least on the state of the input photon. Figure 9 The method of utilizing one or two photons is shown from the perspective of defects included in information processors.

[0107] Figure 7 An example method 700 for the operation of a communication device is shown (including, for example, actions 702, 704, etc.). For method 700, as with other methods taught herein, various actions may be performed in a different order than those shown and described. Furthermore, these methods may omit some actions and / or employ additional actions. One or more actions of method 700 may be performed by or via one or more circuits (e.g., one or more hardware processors). In some implementations, method 700 is performed by a controller, such as control subsystem 104 of system 100.

[0108] Method 700 typically begins with a call to the controller.

[0109] At 702, the controller initializes the first photon or input photon in the input photon computation state. The photon computation state can be a first photon base state such as horizontal polarization, a second photon base state such as vertical polarization, or a superposition of two base states. The input photon is emitted from a photon source and can pass through optional optical devices to generate the first photon computation state.

[0110] At 704, the controller causes the input photon to propagate to the defect via the input path. The input path is communicatively coupled to the defect. For example, the input photon can propagate through the input path 504 to region 502, which includes defect 204. At defect 202, the input photon can be absorbed, reflected, transmitted, or subjected to other physical effects, at least based on the state of defect 204.

[0111] At 706, the controller, based on the state of the defect, guides the second photon or output photon to propagate through the first output path or the second output path, or causes the second photon or output photon to propagate through the first output path or the second output path in a certain direction. For example, the controller guides the output photon from switch 500 to propagate through output path 506. Another example includes the output photon propagating through waveguide 304.

[0112] At 708, the controller triggers further actions of the system, such as 710 or 712. At 710, the controller causes the output photon to propagate to a second defect or a further defect. The second defect may be communicatively coupled to the first output path or the second output path. Processing at the further defect may include re-invoking an instance of method 700. At 712, the controller causes the state of the output photon to be measured.

[0113] Method 700 ends until it is called again. After method 700, there may be one or more other methods that include one or more other instances of method 700.

[0114] Figure 8 An example method 800 for the operation of a communication device is shown (including, for example, actions 802, 804, etc.). An example of method 800 involves a photon.

[0115] Method 800 typically begins with a controller call.

[0116] At 802, the controller initializes the photons in the photonic computing state. The photons can encode information in various ways (e.g., spatial modes), such as a first logic value corresponding to the absence of a photon at a position or direction, and a second logic value corresponding to its presence. Other encoding includes using orthogonal optical modes such as polarization, for example, horizontal and vertical linear polarization or different circular polarizations. Another encoding is the physical presence or absence of the photons during intervals or time bins. These bins can be repeated.

[0117] At 804, the controller causes photons to propagate to the defect via the input path. The input path is communicatively coupled to the defect. For example, photons can propagate to defect 204 via waveguide 302. At the defect, photons can be absorbed, reflected, transmitted, or subjected to other physical effects, at least based on the state of defect 204.

[0118] At position 806, based on the defect state, the controller guides the photon to propagate through either the first or second output path, or influences the direction of propagation of the photon through either the first or second output path. For example, the photon propagates through waveguide 304 or waveguide 306. The photon can include quantum or classical information. For example, the photon can be in a superposition state.

[0119] At 808, the controller causes further action of the photon, such as at 710 or 712.

[0120] Method 800 ends until it is called again. Method 800 can be followed by one or more other methods.

[0121] Figure 9 An example method 900 (including multiple actions) for operating a communication device is shown. One or more actions of method 900 can be performed by or via a controller including one or more circuits (e.g., one or more hardware processors, control subsystem 104 of system 100, etc.).

[0122] At position 902, the controller initializes the defect in the defect calculation state. The defect calculation state is the first defect base state, the second defect base state, or a superposition of the first and second defect base states. Initializing the defect in the defect calculation state can include one or more occurrences of 904, 906, or 908.

[0123] At position 904, the controller initializes the defect or initializes it to either a first or second defect fundamental state. The first or second defect fundamental state corresponds to a local degree of freedom at the defect location. For example, nuclear spin down or nuclear spin up. Other local degrees of freedom include electron spin, hole spin, exciton states, and energy levels. The fundamental state of a defect can be formed by a combination of fundamental states of multiple local degrees of freedom. For example, nuclear spin and electron spin.

[0124] At 906, the controller manipulates the computational state of the defect or the manipulation of the computational state that causes the defect. For example, control subsystem 155 performs one or more classical or quantum operations on information stored in the local degrees of freedom of defect 204. At 908, the controller measures the computational state of the defect or the measurement of the computational state that causes the defect.

[0125] At 910, the controller causes photons to be received at the defect. The defect is situated within the bulk of the semiconductor material. The photons propagate through an input path communicatively coupled to the defect.

[0126] At 916, the controller, based at least on the state of the defect, causes photons emitted from the defect to propagate through either a first output path or a second output path. The photons emitted from the defect can be (input) photons received at the defect at action 910 or output photons based on the input photons. For example, the output photons may share a state with the input photons.

[0127] Method 900 ends until it is called again.

[0128] Method 900 may include other actions. For example, the controller measures the calculated state of the defect or the measurement of the calculated state that caused the defect. For example, the controller performs action 908. At 916, the controller may also, based on the state of the defect and the state of the input photons, cause photons emitted from the defect to propagate through a first output path or a second output path.

[0129] Prior to the actions shown in methods 700, 800, or 900, the controller prepares or causes the preparation of an environment for a communication device comprising a body of semiconductor material and at least one defect. For example, the controller executes processor-executable instructions that, upon execution, cause the environment subsystem 152 and / or the input subsystem 156 to prepare the device 200. The controller can prepare the body of the semiconductor material comprising one or more defects based on electrical, magnetic, thermal, or strain distributions (i.e., variations in one or more of magnetic, electric, strain, and thermal fields).

[0130] Other implementation methods are summarized in the following examples.

[0131] Example 1. An information processing system includes a substrate and a first switch physically coupled to the substrate. The first switch includes a first region of semiconductor material and a first local defect disposed in the first region of semiconductor material. The first local defect includes a first computational state selected from a first state, a second state, or a first superposition of the first and second states. The system also includes a first output path communicatively coupled to the first local defect and a second output path communicatively coupled to the first local defect. At least according to the first computational state of the first local defect, a first photon emitted from the first local defect is guided to either the first output path or the second output path.

[0132] Example 2. The system of Example 1 further includes a second switch physically coupled to a substrate and communicatively coupled to a first output path. The second switch includes a second region of semiconductor material and a second local defect disposed in the second region of semiconductor material. The second local defect includes a second computed state selected from a first state, a second state, or a second superposition of the first and second states. The system also includes a third output path communicatively coupled to the second local defect and a fourth output path communicatively coupled to the second local defect. At least according to the second computed state of the second local defect, a second photon emitted from the second local defect is guided to either the third or fourth output path.

[0133] Example 3. The system of Example 2 further includes a third switch, which is physically coupled to the substrate and communicatively coupled to a second output path. The third switch includes a third region of semiconductor material and a third local defect disposed in the third region of semiconductor material. The third local defect includes a third computed state selected from a first state, a second state, or a third superposition of the first and second states. The system also includes a fifth output path communicatively coupled to the third local defect and a sixth output path communicatively coupled to the third local defect. At least according to the third computed state of the third local defect, a third photon emitted from the third local defect is guided to either the fifth or sixth output path.

[0134] Example 4. The system of Example 3, wherein at least one of the first, second, or third photons is emitted or re-emitted by the first, second, or third switch.

[0135] Example 5. The system in Example 1 further includes an input path communicatively coupled to a first local defect. A first photon propagates to the first local defect via the input path. The first photon has a state.

[0136] Example 6. The system in Example 1, wherein the first photon is guided to either a first output path or a second output path based at least on a first computational state of a first local defect and a state of the first photon.

[0137] Example 7. The system of Example 2 or 3, wherein a first photon propagates to a second local defect via a first output path, and a second photon is guided to a third or fourth output path at least according to a second computational state of the second local defect and the state of the first photon.

[0138] Example 8. The system in Example 3, wherein a first photon propagates to a third local defect via a second output path, and the third photon is guided to a fifth or sixth output path at least according to a third computational state of the third local defect and the state of the first photon.

[0139] Example 9. The system of Example 3 further includes a fourth switch communicatively coupled to a fourth output path and a fifth output path. The fourth switch includes a fourth region of semiconductor material and a fourth local defect disposed in the fourth region of semiconductor material. The fourth local defect includes a fourth computational state selected from a first state, a second state, or a fourth superposition of the first and second states. The system also includes a seventh output path communicatively coupled to the fourth local defect and an eighth output path communicatively coupled to the fourth local defect. A fourth photon emitted by the fourth local defect is directed to either the seventh or eighth output path, at least according to the fourth computational state of the fourth local defect.

[0140] Example 10. The system in Example 9, wherein the third photon propagates to the fourth local defect via the fifth output path, and the fourth photon is guided to either the seventh or eighth output path based at least on the fourth computational state of the fourth local defect and the state of the third photon.

[0141] Example 11. The system in Example 9 also includes a body of semiconductor material, the body of which includes at least two of a first region, a second region, a third region, and a fourth region of semiconductor material.

[0142] Example 12. Systems from Examples 1, 2, 3, 9, or 11, wherein the semiconductor material is a silicon alloy, silicon, natural silicon, purified silicon, or primarily comprises purified silicon.

[0143] Example 13. A system like that in Examples 1, 2, 3, or 9, wherein the first and second states are selected from the group consisting of nuclear spin states, electron spin states, hole spin states, and energy levels.

[0144] In the example application, one or more switches are configured to direct photons to one of a plurality of outputs or detectors. One or more switches may be provided by a dedicated information processor 154 as described above. Each of the one or more switches may include at least one defect in the semiconductor body. The semiconductor body may, for example, include a silicon crystal with defects. The silicon crystal may advantageously include silicon from which paramagnetic atoms have been removed. For example, the silicon may be enriched with various levels of silicon-28, such as 99%, 99.9%, and 99.99%.

[0145] At least one defect is located sufficiently close to the optical structure to transiently couple to the optical structure. The optical structure includes at least one optical waveguide providing at least a first output path and a second output path for optical photons.

[0146] Optical photons in different output paths are distinguishable. For example:

[0147] • The first output path and the second output path can be provided by a first optical waveguide and a second optical waveguide; and / or

[0148] • The first and second output paths can be provided by different photon characteristics (e.g., phase, polarization, or timing).

[0149] When the first output path and the second output path are provided by different optical waveguides, the optical photons in the first output path and the second output path can be distinguished based on which one of the first waveguide and the second waveguide they are located in.

[0150] Where the first and second output paths are provided by different photon characteristics, the optical photons in the first and second output paths can be distinguished based on their characteristics. For example, the first output path may include photons in a first polarization state, and the second output path may include photons in a second polarization state. The second polarization state may be orthogonal to the first polarization state. As another example, the second output path may include photons with a phase shift relative to the photons in the first output path. As another example, the second output path may include photons with a delay relative to the photons in the first output path. For example, the first output path may include a group of one or more photons propagating in the optical structure at intervals allocated to the first output path, and the second output path may include photons that are delayed such that they propagate in the optical structure over times allocated to the first output path.

[0151] Optical photons can be propagated from defects (e.g., optical photons can be generated due to state transitions within defects) or propagated from external sources through optical structures. Whether optical photons are output on a first output path or a second output path depends on the state of the defect.

[0152] For example, a defect can have a first fundamental state that causes an optical photon to be output in a first output path and a second fundamental state that causes an optical photon to be output in a second output path. For example, the first fundamental state can be a state in which the unpaired electrons in the defect have spin down (higher energy), and the second fundamental state can be a state in which the unpaired electrons in the defect have spin up (lower energy).

[0153] The input subsystem can be used as described above to initialize a defect to a desired state. For example, the input subsystem can be operated as described above to place the defect in a first fundamental state, a second fundamental state, or a quantum superposition of the first and second fundamental states. In an example embodiment, the input subsystem 156, together with the control subsystem 104, is used to initialize the defect to a desired state by performing electron paramagnetic resonance (EPR) and / or nuclear magnetic resonance (NMR) on the electron spins and / or nuclear spins in the defect. As another example, initializing the defect to a desired initial state may include operating one or more of the following: an optical input subsystem of the input subsystem 156 (e.g., for applying light having photon energies corresponding to the transition between the first and second fundamental states), an electric field subsystem, a magnetic manipulation subsystem, a mechanical subsystem, or a cryogenic subsystem.

[0154] In some implementations, a first fundamental state and a second fundamental state are selected such that the interaction between the defect and the selected photons is stronger in the first fundamental state compared to the second fundamental state, or vice versa. For example, in the second fundamental state, the defect may have a resonance that matches the energy of certain photons with specific energies (i.e., specific frequencies or wavelengths) in the first optical structure, whereas in the first fundamental state, the defect may not have a resonance that matches the energy of certain photons. In such implementations, certain photons may interact with the defect in such a way that some photons are output to the second output path, while other photons in the optical structure are output to the first output path.

[0155] In some implementations, the second fundamental state is the unpaired electron of defect 204 with its spin up (lower energy), and the second fundamental state can undergo a transition involving flipping the spin of the unpaired electron to spin down (higher energy). When defect 204 is in the second fundamental state, the energy required for this transition can be tuned to match the energy of the photon intended to interact with defect 204.

[0156] The energy of the transition from the second fundamental state of defect 204 can be tuned by changing the parameters affecting the energy of the transition from the second fundamental state through the control environment subsystem 152 and / or the input subsystem 156. For example, tuning may involve one or more of the following:

[0157] • The magnetic subsystem of the operation input system 156 is used to set the magnetic field strength at the location of the defect 204;

[0158] • The mechanical subsystem of the operation input system 156 applies strain to the semiconductor where the defect 204 is located;

[0159] • The electrical subsystem of the operation input system 156 is used to set an electric field at the location of defect 204;

[0160] and / or

[0161] • Operate one or more transmitters of the input subsystem 156 to selectively deliver microwave, radio frequency (RF) and / or electromagnetic radiation to the location of defect 204.

[0162] It is possible to place defects in a selected superposition of a first fundamental state and a second fundamental state, enabling a switch or network of switches, as described herein, to perform quantum computing operations. For example, the interaction of a first photon with a switch in which defects are in a superposition state can produce an output, which is a superposition of the state of the first photon on a first output path and the state of the first photon on a second output path.

[0163] Figures 10A to 10D This is a schematic diagram illustrating how photons are output differently based on their characteristics and defect states. Figure 10A In this device 1000, a defect 204 is included in the body of silicon or other semiconductor material. The optical structure includes optical waveguide 302 and optical waveguide 304. The defect 204 is within the evanescent coupling range of waveguide 302 and waveguide 304.

[0164] exist Figure 10A In the diagram, the defect is in the first basic state (indicated by dark fill). Photon P1 is transmitted by waveguide 302 and output on waveguide 302.

[0165] exist Figure 10B In the diagram, defect 204 is in the second fundamental state (indicated by white filling). Photon P1 is transmitted by waveguide 302 and undergoes resonance with defect 204, which causes photon P2 to couple into the second waveguide 304 and be output on the second waveguide 304.

[0166] Except for photon P2, which has different characteristics (such as photon energy) from photon P1, which is transmitted by optical waveguide 302, Figure 10C and Figure 10BSame. Photon P2 does not resonate with defect 204 and is output by waveguide 302.

[0167] Apart from the fact that defect 204 is in a quantum superposition of the first and second fundamental states, Figure 10D and Figure 10B Same. When photon P1 is transmitted by optical waveguide 302, photon P1 is the superposition output of photon P1' on the first optical waveguide 302 and photon P1" in the second optical waveguide 304.

[0168] exist Figures 10A to 10D In this process, photons interacting with defect 204 can be selectively output to the second optical waveguide 304 in various ways, for example, through:

[0169] • Asymmetric coupling between the defect and the second optical waveguide 304 (compared to the first optical waveguide 302, the defect 204 can be closer to the second optical waveguide 304 or be more strongly coupled to the second optical waveguide 304 in other ways);

[0170] • and / or the different polarization characteristics of the first optical waveguide 302 and the second optical waveguide 304 (e.g., interaction with the defect 204 can change the polarization of photon P1 from the polarization transmitted through waveguide 302 to the polarization transmitted through waveguide 304).

[0171] Figures 10A to 10D Multiple switches of the type shown can be combined in a tree structure, for example, as referenced. Figure 6 As shown and described.

[0172] The coupling between the first optical waveguide 302, the second optical waveguide 304, and the defect 204 can be increased, for example, in the following ways:

[0173] • Provide an optical cavity or resonator near defect 204; and / or

[0174] • Make defect 204 into multiple (integral) defects 204 initialized to the same basic state. As is known in the art, an optical cavity or resonator can be configured to resonate at the frequency of the photon P1 that is desired to interact with defect 204. The electric and / or magnetic fields of the photon P1 resonating in such a resonator or cavity can be concentrated, thereby increasing the coupling with defect 204.

[0175] Figures 11A to 11DThe operation of an example switch 1100 providing two output paths in an optical waveguide is illustrated. Switch 1100 includes an optical waveguide 302 and a defect 204 in a semiconductor body, the defect 204 being sufficiently close to the optical waveguide 302 to couple photons in the waveguide 302 to the defect 204. In the illustrated embodiment, the waveguide 302 includes an optional optical structure 303 (e.g., an optical chamber or optical resonator) configured to enhance the coupling of selected photons to the defect 204. As described above, the defect 204 can be fabricated in a first fundamental state, a second fundamental state, or a superposition of the first and second fundamental states.

[0176] exist Figure 11A In the diagram, defect 204 is in a first fundamental state (indicated by dark fill). Photon P1 is transmitted via waveguide 302. Photon P1 has a characteristic phase and / or polarization and does not significantly interact with defect 204. Photon P1 is output on waveguide 302 without changing its characteristics. The first output path includes photon P1 passing through defect 204 without altering its characteristics.

[0177] exist Figure 11B In the diagram, defect 204 is in a second fundamental state (indicated by white fill). Photon P1 is transmitted through waveguide 302 and undergoes resonance with defect 204, which causes one or more characteristics of photon P1 to change; for example, the interaction with defect 204 can alter the phase and / or polarization of photon P1. The altered photon P1A is output on waveguide 302. A second output path includes photon P1A with the altered characteristics.

[0178] Except for photon P2, which has different characteristics (such as photon energy) from photon P1, which is transmitted by optical waveguide 302, Figure 11C and Figure 11B The same. Photon P2 does not experience resonance with defect 204 and is output unchanged on waveguide 302.

[0179] Apart from the fact that defect 204 is in a quantum superposition of the first and second fundamental states, Figure 11D and Figure 11B The same. When photon P1 is transmitted via optical waveguide 302, photon P1 is output on the first optical waveguide 302 as a superposition of photon P1 (with unchanged characteristics) and photon P1A (with changed characteristics). Figure 11D In the example, photon P1 is effectively output on both the first and second output paths in a superposition manner.

[0180] Figures 11E to 11G An example implementation is shown where the first and second output paths are separated by time. Figure 11EA group of photons is shown passing along the optical waveguide 302 through the defect 204. The photons include photons P2 that tend not to interact with the defect 204 when the defect 204 is in the second fundamental state as described above (e.g., because they have the wrong energy and / or other characteristics to interact with the defect 204) and photons P1 that tend to interact with the defect 204.

[0181] In this example, photon P1 interacts with defect 204 in a time-dependent manner. For example, photon P1 can be absorbed and subsequently re-emitted by defect 204. Figure 11F Therefore, photon P1 is delayed relative to its initially grouped photons. Figure 11G ).

[0182] Defect 204 can be any type of defect described herein. In some embodiments, defect 204 is a local defect. In some embodiments, defect 204 is a T-center or a set of T-centers.

[0183] Unless otherwise stated herein or unless the context clearly specifies otherwise, the term “approximately” modifying a numerical quantity means plus or minus ten percent (10). Unless otherwise stated, or unless the context clearly specifies otherwise, “between” two numerical values ​​shall be understood as between and including both of the two numerical values.

[0184] The above description includes specific details to provide an understanding of the various disclosed implementations. However, those skilled in the art will recognize that implementations can be practiced without one or more of these specific details, parts of the method, components, materials, etc. In some cases, well-known structures associated with semiconductors and / or optical devices and / or quantum computing and / or quantum information processing, such as targets, substrates, lenses, waveguides, shielding, filters, lasers, and processor-executable instructions (e.g., BIOS, drivers), have not been shown or described in detail to avoid unnecessarily obscuring the description of the disclosed implementations.

[0185] The following numbered paragraphs describe non-limiting exemplary embodiments of the invention as described in this disclosure:

[0186] 1. A method for switching photons, the method comprising:

[0187] A first defect is provided in the bulk of the semiconductor material located near the first and second optical waveguides;

[0188] The first defect is selectively initialized to a first computational state, which is selected from a first basic state and a superposition of the first basic state and a second basic state. In the first basic state, the first defect is coupled with one or more photonic modes in the first optical waveguide. In the superposition of the first basic state and the second basic state, the first defect is not coupled with one or more photonic modes in the first optical waveguide.

[0189] Transmitting the first photon in the first optical waveguide; and

[0190] The first photon is coupled into the second optical waveguide through the first defect.

[0191] 2. The method according to the example listed in Embodiment 1 (or any other example embodiment in this disclosure), wherein the first calculation state includes an electron spin state.

[0192] 3. The method according to embodiment 1 or 2 (or any other example embodiment in this disclosure) listed in the examples, wherein the first photon has a first optical frequency, and the defect has an optical transition having an energy corresponding to the first optical frequency of the first photon when the defect is in a selected first computational state.

[0193] 4. The method according to embodiment 3 listed in the example, wherein the energy of the transition is the zero phonon line (ZPL) transition energy.

[0194] 5. The method according to embodiment 3 or 4 (or any other example embodiment in this disclosure) listed in the examples, comprising: transmitting a first plurality of additional photons in the first optical waveguide, the first plurality of additional photons having an optical frequency different from the first optical frequency, wherein the method includes outputting the first additional photons through the first optical waveguide.

[0195] 6. The method according to Example 5 (or any other example embodiment in this disclosure), comprising: transmitting a second plurality of additional photons in the first optical waveguide, the second plurality of additional photons having the first optical frequency, wherein the method includes coupling the second plurality of additional photons to the second optical waveguide through the defect.

[0196] 7. The method according to any one of the exemplary embodiments 1 to 6 (or any other exemplary embodiments in this disclosure), wherein the first optical waveguide includes an optical structure, and the one or more photonic modes are photonic modes of the optical structure.

[0197] 8. The method according to embodiment 7 (or any other example embodiment in this disclosure), wherein the optical structure includes an optical cavity or an optical resonator.

[0198] 9. The method according to any one of the exemplary embodiments 1 to 8 (or any other exemplary embodiment in this disclosure), wherein the defect includes interstitial atoms.

[0199] 10. The method according to any one of the exemplary embodiments 1 to 8 (or any other exemplary embodiment in this disclosure), wherein the defect includes a vacancy in the lattice of the semiconductor material.

[0200] 11. The method according to any one of the exemplary embodiments 1 to 8 (or any other exemplary embodiment in this disclosure), wherein the defect includes a damage center.

[0201] 12. The method according to any one of the exemplary embodiments 1 to 8 (or any other exemplary embodiment in this disclosure), wherein the defect includes a light-emitting defect.

[0202] 13. The method according to embodiment 12 (or any other example embodiment in this disclosure), wherein the luminescent defect includes a T-center.

[0203] 14. The method according to any one of the exemplary embodiments 1 to 13 (or any other exemplary embodiments in this disclosure), comprising: setting the first defect to a second computational state different from the first computational state after a time interval following selective initialization of the first defect to the first computational state;

[0204] A second photon, having the first optical frequency, is transmitted in the first optical waveguide; and

[0205] The second photon is output in the first optical waveguide.

[0206] 15. The method according to the example listed in embodiment 14 (or any other example embodiment in this disclosure), wherein the second photon is the same as the first photon.

[0207] 16. A method according to any one of the exemplary embodiments 1 to 16 (or any other exemplary embodiments in this disclosure), comprising: transmitting a photon stream through the first optical waveguide, and selectively guiding photons in the photon stream through the first optical waveguide or the second optical waveguide by periodically changing the computational state of the first defect.

[0208] 17. The method according to any one of the exemplary embodiments 1 to 16 (or any other exemplary embodiments in this disclosure), wherein the defect is one of a plurality of first defects of the same type, and the method includes selectively initializing each of the plurality of first defects to the first computational state.

[0209] 18. The method according to any one of the exemplary embodiments 1 to 17 (or any other exemplary embodiment in this disclosure), wherein the first defect is located more than 10 nanometers away from any interface of the semiconductor body.

[0210] 19. The method according to any one of the exemplary embodiments 1 to 18 (or any other exemplary embodiments in this disclosure), further comprising: providing a second defect in the bulk of the semiconductor material located near each of the second and third optical waveguides;

[0211] The second defect is selectively initialized to a third computational state, which is selected from the first base state and the superposition of the first base state and the second base state. In the first base state, the second defect is coupled with one or more photonic modes of the second optical waveguide. In the superposition of the first base state and the second base state, the second defect is not coupled with one or more photonic modes of the second optical waveguide.

[0212] The first photon is transmitted in the second optical waveguide; and

[0213] The second photon is coupled into the third optical waveguide through the second defect.

[0214] 20. A method according to any one of the exemplary embodiments 1 to 19 (or any other exemplary embodiments in this disclosure), comprising: transmitting a photon stream in a first optical waveguide, wherein a first subset of the photons includes the first photons and constitutes a signal, and selecting the signal through the first defect and rerouting the signal to a second optical waveguide.

[0215] 21. An information processing apparatus, comprising:

[0216] The first region of the semiconductor material;

[0217] Local defects are provided in a first region of the semiconductor material, the local defects supporting computational states selected from: a first state, a second state, and a first superposition of the first state and the second state;

[0218] The first input waveguide is communicatively coupled to the local defect; and

[0219] A first output waveguide is communicatively coupled to the local defect, wherein:

[0220] The first output waveguide supports the first output path, and

[0221] The device is configured such that, based at least on the computational state of the local defect, photons emitted from the local defect are guided to the first output waveguide and the first output path.

[0222] 22. The information processing apparatus according to embodiment 21 (or any other example embodiment in this disclosure), wherein:

[0223] The first output waveguide supports the second output path, and

[0224] Based at least on the calculated state of the local defect, the photons emitted from the local defect are guided to the first output waveguide and the first output path or the second output path.

[0225] 23. The information processing apparatus according to embodiment 21 (or any other example embodiment in this disclosure) further includes:

[0226] A second output waveguide is communicatively coupled to the local defect, wherein:

[0227] The second output waveguide supports the second output path, and

[0228] Based at least on the computational state of the local defect, the photons emitted from the local defect are guided to either the first output path or the second output path.

[0229] 24. The information processing apparatus according to embodiment 21 (or any other example embodiment in this disclosure), wherein the photon emitted from the local defect arrives through the first input waveguide.

[0230] 25. The information processing apparatus according to embodiment 24 (or any other example embodiment in this disclosure), wherein:

[0231] The photon has a photon computational state selected from a first photon fundamental state, a second photon fundamental state, and a superposition of the first and second photon fundamental states, and

[0232] Based at least on the computational state of the local defect and the computational state of the photon, the photon emitted from the local defect is guided to the first output waveguide and the first output path.

[0233] 26. An information processing apparatus according to any one of the exemplary embodiments 21 to 23 (or any other exemplary embodiment in this disclosure), wherein the photon emitted from the local defect has a state that depends in part on the state of the input photon arriving at the local defect through the first input waveguide.

[0234] 27. The information processing apparatus according to embodiment 26 (or any other example embodiment in this disclosure), wherein:

[0235] The input photon has an input photon computation state selected from a first photon fundamental state, a second photon fundamental state, and a superposition of the first and second photon fundamental states, and

[0236] Based at least on the computational state of the local defect and the computational state of the input photon, the photon emitted from the local defect is guided to the first output waveguide and the first output path.

[0237] 28. The information processing apparatus according to any one of the exemplary embodiments 21 to 27 (or any other exemplary embodiment in this disclosure), wherein the semiconductor material is a silicon alloy, silicon, natural silicon, or purified silicon.

[0238] 29. The information processing apparatus according to embodiment 28 listed in the example, wherein the semiconductor material mainly comprises purified silicon.

[0239] 30. An information processing apparatus according to any one of the exemplary embodiments 21 to 29 (or any other exemplary embodiment in this disclosure), wherein the first state and the second state supported by the local defect are selected from the group consisting of nuclear spin states, electron spin states, hole spin states and energy levels.

[0240] 31. The information processing apparatus according to embodiment 21 listed in the examples (or any other example embodiment in this disclosure), wherein the first output path is a spatial mode, polarization mode, time chamber, frequency mode, or Fock state.

[0241] 32. A photonic switch, comprising:

[0242] Defects in the bulk of a semiconductor material, the defects having multiple available quantum states including a first fundamental state and a second fundamental state;

[0243] An optical structure including an optical waveguide adjacent to the defect, the optical waveguide providing a path for delivering photons to the vicinity of the defect;

[0244] Tools for initializing the defect to an initial quantum state;

[0245] Specifically, when the defect is in the first basic state, the photon is output on the first output path, and when the defect is in the second basic state, the photon interacts with the defect and is output on the second output path.

[0246] 33. The photonic switch according to embodiment 32 (or any other example embodiment in this disclosure), wherein the first output path and the second output path are carried by the first optical waveguide.

[0247] 34. A photonic switch according to embodiment 33 of the example (or any other example embodiment in this disclosure), wherein the first output path and the second output path respectively include photons in a first polarization state and photons in a second polarization state, and the interaction with the defect changes the polarization state of the transmitted photons.

[0248] 35. A photonic switch according to embodiment 33 of the example (or any other example embodiment in this disclosure), wherein the first output path and the second output path respectively include a photon having a first phase and a photon having a second phase, and the interaction with the defect changes the phase of the transmitted photon.

[0249] 36. A photonic switch according to embodiment 33 of the example (or any other example embodiment in this disclosure), wherein the first output path and the second output path are separated by a time delay, and the interaction with the defect delays the transmitted photons.

[0250] 37. A photonic switch according to any one of the exemplary embodiments 32 to 36 (or any other exemplary embodiment in this disclosure), wherein the optical structure includes an optical cavity or resonator located within the evanescent coupling range of the defect, the optical cavity or resonator concentrating the electric field and / or magnetic field of the photon.

[0251] 38. The photonic switch according to any one of the embodiments 32 to 37 listed in the examples, wherein the semiconductor body comprises a silicon crystal lattice.

[0252] 39. The photonic switch according to embodiment 38 (or any other example embodiment in this disclosure), wherein the silicon is at least 99% silicon-28.

[0253] 40. A photonic switch according to any one of the exemplary embodiments 32 to 39 (or any other exemplary embodiment in this disclosure), wherein the defect is a local defect.

[0254] 41. A photonic switch according to any one of the exemplary embodiments 38 to 40 (or any other exemplary embodiment in this disclosure), wherein the defect includes a vacancy in a silicon crystal lattice.

[0255] 42. A photonic switch according to any one of the exemplary embodiments 38 to 40 (or any other exemplary embodiment in this disclosure), wherein the defect comprises interstitial atoms in a silicon crystal lattice.

[0256] 43. A photonic switch according to any one of the exemplary embodiments 38 to 40 (or any other exemplary embodiment in this disclosure), wherein the defect includes radiation damage centers in a silicon crystal lattice.

[0257] 44. A photonic switch according to any one of the exemplary embodiments 38 to 40 (or any other exemplary embodiment in this disclosure), wherein the defect includes a T-center.

[0258] 45. The photonic switch according to any one of the exemplary embodiments 32 to 44 (or any other exemplary embodiment in this disclosure), wherein the defect includes a plurality of identical defects.

[0259] 46. ​​A photonic switch according to any one of the exemplary embodiments 32 to 45 (or any other exemplary embodiment in this disclosure), comprising a second optical waveguide located within the evanescent coupling range of the defect, wherein the second output path is on the second optical waveguide.

[0260] 47. A photonic switch according to any one of the exemplary embodiments 32 to 46 (or any other exemplary embodiment in this disclosure), wherein the initial quantum state is selected from: the first basic state, the second basic state, and a superposition of the first basic state and the second basic state.

[0261] 48. A photonic switch according to any one of the exemplary embodiments 32 to 47 (or any other exemplary embodiment in this disclosure), wherein the defect is located at least 10 nm away from any interface of the semiconductor body.

[0262] 49. A photonic switch according to any one of the exemplary embodiments 32 to 48 (or any other exemplary embodiment in this disclosure), wherein the defect includes unpaired electron spins, and the means for initializing the defect includes one or more of electron paramagnetic resonance, electron spin resonance, or nuclear magnetic resonance.

[0263] 50. A switching network comprising a plurality of photonic switches according to any one of the exemplary embodiments 32 to 49 (or any other exemplary embodiment in this disclosure), wherein the plurality of switches are arranged in a tree structure such that a first output path and a second output path of some of the plurality of switches are optically coupled to the inputs of other switches among the plurality of switches.

[0264] 51. An information processing method, comprising:

[0265] A first photon is received at a first switch, the first switch comprising a first region of semiconductor material and a first local defect disposed in the first region of semiconductor material, wherein the first local defect has a first defect calculation state; and

[0266] Based at least on the first defect calculation state of the first local defect, the second photon is guided to propagate through the following path:

[0267] The first output path is communicatively coupled to the first local defect, or

[0268] The second output path is communicatively coupled to the first local defect.

[0269] 52. The information processing method according to embodiment 51 (or any other example embodiment in this disclosure), wherein receiving the first photon includes propagating the first photon through a first input path communicatively coupled to the first local defect.

[0270] 53. The information processing method according to embodiment 52 (or any other example embodiment in this disclosure), wherein:

[0271] The first photon has a first photon computation state; and

[0272] Based at least on the first defect calculation state and the first photon calculation state, the second photon is guided to propagate through the first output path or the second output path.

[0273] 54. The information processing method according to embodiment 52 (or any other example embodiment in this disclosure) further includes:

[0274] Prepare a first photon having a first photon computing state, wherein the first photon computing state is selected from a first photon fundamental state, a second photon fundamental state, or a superposition of the first photon fundamental state and the second photon fundamental state.

[0275] 55. The information processing method according to embodiment 51 (or any other example embodiment in this disclosure) further includes:

[0276] Prepare the first local defect in the first defect calculation state, wherein the first defect calculation state is selected from the first defect base state, the second defect base state, and the superposition of the first defect base state and the second defect base state.

[0277] 56. The method according to any one of the exemplary embodiments 51 to 55 (or any other exemplary embodiment in this disclosure) further includes:

[0278] Measure the state of the second photon.

[0279] 57. The method according to any one of the exemplary embodiments 51 to 56 (or any other exemplary embodiment in this disclosure) further includes:

[0280] Measure the state of the first local defect.

[0281] 58. The method according to any one of the exemplary embodiments 51 to 57 (or any other exemplary embodiment in this disclosure) further includes:

[0282] The second photon is received at a second switch, the second switch comprising a second region of semiconductor material and a second local defect disposed in the second region of the semiconductor material, wherein the second local defect has a second defect calculation state; and

[0283] Based at least on the calculated state of the second defect of the second local defect, the third photon is guided to propagate through the following path:

[0284] The third output path is communicatively coupled to the second local defect, or

[0285] The fourth output path is communicatively coupled to the second local defect.

[0286] 59. The method according to any one of the exemplary embodiments 51 to 58 (or any other exemplary embodiment in this disclosure), wherein the first photon is transformed into the second photon.

[0287] 60. An information processing method, comprising:

[0288] A local defect is prepared in the bulk of a semiconductor material and is in a defect calculation state, wherein the defect calculation state is selected from a first defect base state, a second defect base state, and a superposition of the first defect base state and the second defect base state; and

[0289] Based at least on the defect calculation state of the local defect, the output photon is guided to propagate through the following path:

[0290] The first output path is communicatively coupled to the local defect, or

[0291] A second output path is communicatively coupled to the local defect.

[0292] 61. The information processing method according to the example embodiment 60 (or any other example embodiment in this disclosure) further includes:

[0293] The input photon propagates through a first input path that is communicatively coupled to the local defect.

[0294] 62. The information processing method according to embodiment 61 (or any other example embodiment in this disclosure), wherein:

[0295] The input photon has an input photon computation state; and

[0296] Based at least on the defect calculation state and the input photon calculation state, the output photon is guided to propagate through the first output path or the second output path.

[0297] 63. The information processing method according to embodiments 61 or 62 listed in the examples includes:

[0298] The input photon is prepared having an input photon computation state, wherein the input photon computation state is selected from a first photon fundamental state, a second photon fundamental state, or a superposition of the first photon fundamental state and the second photon fundamental state.

[0299] 64. The information processing method according to embodiment 60 listed in the example further includes:

[0300] Prepare the output photon having a photonic computing state, wherein the photonic computing state is selected from a first photonic fundamental state, a second photonic fundamental state, or a superposition of the first photonic fundamental state and the second photonic fundamental state;

[0301] The output photon propagates through a first input path communicatively coupled to the first defect; and

[0302] Based at least on the defect calculation state and the output photon calculation state, the output photon is guided to propagate through the first output path or the second output path.

[0303] 65. The information processing method according to any one of the exemplary embodiments 60 to 64 (or any other exemplary embodiment in this disclosure) further includes:

[0304] Measure the state of the output photon.

[0305] 66. The information processing method according to any one of the exemplary embodiments 60 to 65 (or any other exemplary embodiment in this disclosure) further includes:

[0306] Measure the state of the local defect.

[0307] 67. A device having any new and inventive feature, combination of features, or sub-combination of features as described herein.

[0308] 68. A method having any new and inventive steps, actions, combinations of steps and / or actions, or sub-combinations of steps and / or actions as described herein.

[0309] In this specification and the appended claims, the terms "a," "the," "an," or "another" used to describe "implementation," "example," or "implementation" are used in the sense that a particular reference feature, structure, or characteristic described in connection with an implementation, example, or implementation is included in at least one implementation, example, or implementation. Therefore, phrases such as "in one implementation," "in an implementation," or "another implementation" do not necessarily all refer to the same implementation. Furthermore, a particular feature, structure, or characteristic may be combined in any suitable manner in one or more implementations, examples, or implementations.

[0310] As used in this specification and the appended claims, singular articles such as “a,” “an,” and “the” include the plural objects referred to, unless the context requires otherwise. It should also be noted that, unless the context requires otherwise, the term “or” is generally used in its meaning as including “and / or.”

[0311] Unless the context otherwise requires, throughout the specification and appended claims, the word “comprising” and its variations, such as “including” and “containing”, shall be interpreted in an open, inclusive sense, meaning “including but not limited to”.

[0312] All U.S. patents, U.S. patent applications publications, U.S. patent applications, foreign patents, foreign patent applications and non-patent publications mentioned in this specification or in any application data page are incorporated herein by reference in their entirety for all purposes.

[0313] While this document describes certain features of the described embodiments and implementations, many modifications, substitutions, alterations, and equivalents will now occur to those skilled in the art. Therefore, it should be understood that the appended claims are intended to cover all such modifications and alterations falling within the scope of the described embodiments and implementations.

[0314] When used to describe this specification, the words “this text,” “above,” “below,” and similar terms should refer to this specification as a whole, and not to any particular part of this specification;

[0315] The directional terms used in this specification and any appended claims (if any), such as “vertical,” “lateral,” “horizontal,” “upward,” “downward,” “forward,” “backward,” “inward,” “outward,” “left,” “right,” “front,” “backward,” “top,” “bottom,” “below,” “above,” “under,” etc., depend on the specific orientation of the described and illustrated device. Various alternative orientations can be assumed for the subject matter described herein. Therefore, these directional terms are not strictly defined and should not be interpreted narrowly.

[0316] In the case of the components mentioned above (e.g., software modules, processors, components, devices, circuits, etc.), unless otherwise indicated, references to such components (including references to “tools”) should be interpreted as including any component that performs the function of the described component as an equivalent of that component (i.e., functionally equivalent), including components that are structurally not equivalent to the disclosed structures that perform the functions of the illustrated exemplary embodiments of the present invention.

[0317] For illustrative purposes, specific examples of systems, methods, and apparatus have been described herein. These are merely examples. The techniques provided herein can be applied to systems other than those illustrated above. Many changes, modifications, additions, omissions, and substitutions are possible within the practice of this invention. This invention includes variations of embodiments that are obvious to those skilled in the art, including variations obtained through: replacing features, elements, and / or actions with equivalent features, elements, and / or actions; mixing and matching features, elements, and / or actions from different embodiments; combining features, elements, and / or actions from embodiments as described herein with features, elements, and / or actions from other technologies; and / or omitting combinations of features, elements, and / or actions from described embodiments.

[0318] Various features are described herein as existing in "some implementations" or "some implementations". Such features are not mandatory and may not be present in all implementations. Implementations of the invention may include zero, any, or any combination of two or more such features. This is limited to the degree to which some of such features are incompatible with the other features, i.e., it is not possible for a person of ordinary skill in the art to construct a practical implementation that combines such incompatible features. Therefore, the description of "some implementations" having feature A and "some implementations" having feature B should be interpreted as explicitly indicating that the inventors have also considered implementations that combine features A and B (unless otherwise stated in the description or features A and B are substantially incompatible).

[0319] Therefore, the appended claims and the claims introduced below are intended to be interpreted to include all such modifications, substitutions, additions, omissions, and sub-combinations that can be reasonably inferred. The scope of the claims should not be limited to the preferred embodiments set forth in the examples, but should be given the broadest interpretation consistent with the entire specification.

Claims

1. A method for switching photons, the method comprising: A network comprising multiple photonic switches interconnected by multiple optical paths is provided, each of the photonic switches comprising a defect in the body of a semiconductor material and different first and second optical waveguides respectively providing a first output path and a second output path from the photonic switch; The defects of the photonic switch are initialized to a corresponding first computational state. The first computational state of the defects of each photonic switch is selected from a first basic state, a second basic state, and a superposition of the first basic state and the second basic state. In the first basic state, the defect is optically coupled to one or more photonic modes in the first optical waveguide of the photonic switch. In the second basic state, the defect is not optically coupled to one or more photonic modes in the first optical waveguide of the photonic switch. The first photon is transmitted to the first photon switch in the photon switch through the first optical path among the plurality of optical paths; as well as Based on the first computational state of the defect of the first photonic switch in the photonic switch, the first photon is selectively coupled to the second photonic switch in the photonic switch through the first output path of the first photonic switch in the photonic switch, or coupled to the third photonic switch in the photonic switch through the second output path of the first photonic switch in the photonic switch.

2. The method according to claim 1, wherein, The first computational state includes the electron spin state.

3. The method according to claim 1 or 2, wherein, The first photon has a first optical frequency, and when the defect of the first photon switch is in the first computational state, the defect has an optical transition, the optical transition having energy corresponding to the first optical frequency of the first photon.

4. The method according to claim 3, wherein, The energy of the optical transition is the zero phonon line (ZPL) transition energy.

5. The method according to claim 3 or 4, comprising: The defect of transmitting a first plurality of additional photons to the first photon switch through the first optical path in the optical path, wherein the first plurality of additional photons have an optical frequency different from the first optical frequency, wherein the method includes outputting the first additional photons through the first optical waveguide.

6. The method according to claim 5, comprising: The method involves transmitting a second plurality of additional photons to the vicinity of a defect in the first photonic switch via the first optical path in the optical path, the second plurality of additional photons having the first optical frequency, wherein the method includes coupling the second plurality of additional photons to the second optical waveguide via the defect in the first photonic switch, and outputting the second additional photons via the second optical waveguide.

7. The method according to any one of claims 1 to 6, comprising: After a time interval following the selective initialization of the defect of the first photonic switch to the first computational state, the defect of the first photonic switch is set to a second computational state different from the first computational state. The defect in transmitting a second photon to the first photon switch, the second photon having a first optical frequency; and The second photon from the first photonic switch is output in the first optical waveguide.

8. The method according to claim 7, wherein, The second photon is the same as the first photon.

9. The method according to any one of claims 1 to 8, comprising: The photon stream is transmitted to the defect of the first photonic switch, and the photons in the photon stream are selectively guided to output through the first optical waveguide or the second optical waveguide by controlling the computational state of the defect of the first photonic switch.

10. The method according to any one of claims 1 to 8, comprising: A photon stream is transmitted to a defect in the first photonic switch, wherein a first subset of photons in the photon stream includes the first photon and constitutes a signal, and the signal is selected and routed to the second optical waveguide by the defect in the first photonic switch.

11. The method according to any one of claims 1 to 10, wherein, The first optical waveguide includes an optical structure, and the one or more photonic modes are photonic modes of the optical structure.

12. The method according to claim 11, wherein, The optical structure includes an optical cavity or an optical resonator.

13. The method according to any one of claims 1 to 12, wherein, The defects include interstitial atoms.

14. The method according to any one of claims 1 to 12, wherein, The defects include vacancies in the crystal lattice of the semiconductor material.

15. The method according to any one of claims 1 to 12, wherein, The defect includes a damage center.

16. The method according to any one of claims 1 to 12, wherein, The defects include luminescence defects.

17. The method according to claim 16, wherein, The luminescent defect includes a T-center.

18. The method according to any one of claims 1 to 17, wherein, For one or more of the photonic switches, the defect is one of a plurality of first defects of the same type, and the method includes selectively initializing each of the plurality of first defects to the first computational state.

19. The method according to any one of claims 1 to 18, wherein, The defect in the photonic switch is located more than 10 nanometers away from any interface of the semiconductor body.

20. The method according to any one of claims 1 to 19, comprising: The defects of the third photonic switch in the photonic switch are selectively initialized to the third computational state; The first photon is transmitted to the third photon switch in the photonic switch; and The first photon is coupled to the second output path of the third photon switch in the photonic switch by exploiting the defect of the third photonic switch in the photonic switch.

21. An information processing apparatus, comprising: The first region of the semiconductor material; A plurality of photonic switches are connected in a tree-like structure via optical waveguides on the semiconductor material, each of the photonic switches comprising: Local defects are provided in a first region of the semiconductor material, the local defects supporting computational states selected from: a first state, a second state, and a first superposition of the first state and the second state; The first input waveguide is communicatively coupled to the local defect. The first output waveguide is communicatively coupled to the local defect, and A second output waveguide, which is different from the first output waveguide and communicatively coupled to the local defect; in: The first output waveguide supports the first output path. The second output waveguide supports the second output path; Each photonic switch in the device is configured such that, at least according to a calculated state of a local defect in the switch, photons incident on the vicinity of the local defect via the first input waveguide are directed to either the first output path provided by the first output waveguide or the second output path provided by the second output waveguide.

22. The information processing apparatus according to claim 21, wherein: The photon has a photon computational state selected from a first photon fundamental state, a second photon fundamental state, and a superposition of the first and second photon fundamental states, and Based at least on the computational state of the local defect and the computational state of the photon, the photon is selectively guided to the first output waveguide and the first output path.

23. The information processing apparatus according to any one of claims 21 to 22, wherein, The semiconductor material is a silicon alloy, silicon, natural silicon, or purified silicon.

24. The information processing apparatus according to claim 23, wherein, The semiconductor material mainly includes purified silicon.

25. The information processing apparatus according to any one of claims 21 to 24, wherein, The first and second states supported by the local defects are selected from the group consisting of nuclear spin states, electron spin states, hole spin states, and energy levels.

26. A photonic switching network, comprising: Multiple photonic switches connected by optical waveguides in a tree-like structure, each photonic switch comprising: Defects in the bulk of a semiconductor material, the defects having multiple available quantum states including a first fundamental state and a second fundamental state; A means for initializing the defect to an initial quantum state; An optical structure adjacent to the defect, the optical structure providing an input path for delivering photons to the vicinity of the defect and a first output path and a second output path for carrying photons away from the defect, the first output path and the second output path being provided by different optical waveguides in the optical waveguide; in: When the defect is in the first basic state, photons transmitted to the defect on the input path are output on a first output path provided by a first optical waveguide in different optical waveguides, and when the defect is in the second basic state, the photons interact with the defect and are output on a second output path provided by a second optical waveguide in different optical waveguides; and The first and second output paths of some of the plurality of photonic switches are optically coupled to the input paths of other photonic switches.

27. The photonic switch network according to claim 26, wherein, In each of the plurality of photonic switches, the optical structure includes an optical cavity or resonator located within the evanescent coupling range of the defect, the optical cavity or resonator concentrating the electric field and / or magnetic field of the photon.

28. The photonic switch network according to any one of claims 26 to 27, wherein, The semiconductor body consists of a silicon crystal lattice.

29. The photonic switch network according to claim 28, wherein, The silicon is at least 99% silicon-28.

30. The photonic switch network according to any one of claims 26 to 28, wherein, In each of the plurality of photonic switches, the defect is a local defect.

31. The photonic switch network according to any one of claims 26 to 30, wherein, In each of the plurality of photonic switches, the defect includes a vacancy in the silicon crystal lattice.

32. The photonic switch network according to any one of claims 26 to 30, wherein, In each of the plurality of photonic switches, the defect comprises interstitial atoms in the silicon crystal lattice.

33. The photonic switch network according to any one of claims 26 to 30, wherein, In each of the plurality of photonic switches, the defect includes a radiation damage center in the silicon crystal lattice.

34. The photonic switch network according to any one of claims 26 to 30, wherein, In each of the plurality of photonic switches, the defect includes a T-center.

35. The photonic switch network according to any one of claims 26 to 34, wherein, In each of the plurality of photonic switches, the defect comprises a plurality of identical defects.

36. The photonic switch network according to any one of claims 26 to 35, wherein, For each of the plurality of photonic switches, the initial quantum state is selected from: the first fundamental state, the second fundamental state, and the superposition of the first fundamental state and the second fundamental state.

37. The photonic switch network according to any one of claims 26 to 36, wherein, In each of the plurality of photonic switches, the defect is located at least 10 nm away from any interface of the semiconductor body.

38. The photonic switch network according to any one of claims 26 to 37, wherein, In each of the plurality of photonic switches, the defect includes unpaired electron spin, and the means for initializing the defect includes one or more of electron paramagnetic resonance, electron spin resonance, and nuclear magnetic resonance.

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