High frequency amplifier

Abstract

A high-frequency amplifier includes a driver amplifier that amplifies a high-frequency signal inputted, and a Doherty amplifier including a carrier amplifier and a peak amplifier that further amplify a signal outputted from the driver amplifier, the high-frequency amplifier having a first multilayer substrate, a second multilayer substrate stacked in coincidence with the first multilayer substrate, and a base member that mounts the first multilayer substrate and the second multilayer substrate, the driver amplifier being mounted on the second multilayer substrate, the carrier amplifier and the peak amplifier being mounted on the first multilayer substrate, the driver amplifier, the carrier amplifier, and the peak amplifier each having a surface on which a prescribed circuit is formed and a back surface on an opposite side of the surface, the surface of the driver amplifier facing the first multilayer substrate, the back surface of the driver amplifier being configured to be separated from the first multilayer substrate, the back surfaces of the carrier amplifier and the peak amplifier each being in contact with the base member, the back surface of the driver amplifier being connected to a wiring layer configured on a surface of the second multilayer substrate, the wiring layer being connected to one end of a first via hole that penetrates the second multilayer substrate and the first multilayer substrate, the other end of the first via hole being connected to the base member.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a high-frequency amplifier.

[0002] This application claims priority based on Japanese Application No. 2020-002865 filed on January 10, 2020, and Japanese Application No. 2020-022128 filed on February 13, 2020, and incorporates all the disclosures recited in the Japanese Applications by reference. BACKGROUND

[0003] In recent years, in a mobile communication system such as a portable telephone, a wide frequency band is being promoted. Therefore, in a power amplifier used in a base station device or the like of the system, high efficiency of power efficiency in a wide frequency band or the like is desired. As a power amplifier for achieving the high efficiency of the power efficiency, a Doherty amplifier having a carrier amplifier (also referred to as a main amplifier) and a peak amplifier is known. For example, a configuration of a Doherty amplifier (Doherty type amplifier) is disclosed in Patent Literature 1. Note that the Doherty amplifier is generally used in a rear stage of a driver amplifier.

[0004] PRIOR ART DOCUMENTS

[0005] PATENT LITERATURE

[0006] Patent Literature 1: International Publication No. 2005 / 093948

[0007] Patent Literature 2: Japanese Patent Application Publication No. 2008-305937 SUMMARY

[0008] A high-frequency amplifier of one aspect of the present disclosure includes a driver amplifier that amplifies a high-frequency signal inputted, and a Doherty amplifier including a carrier amplifier and a peak amplifier that further amplify a signal outputted from the driver amplifier, the high-frequency amplifier having: a first multilayer substrate; a second multilayer substrate stacked in coincidence with the first multilayer substrate; and a base member that mounts the first multilayer substrate and the second multilayer substrate, the driver amplifier being mounted on the second multilayer substrate, the carrier amplifier and the peak amplifier being mounted on the first multilayer substrate, the driver amplifier, the carrier amplifier, and the peak amplifier each having a surface on which a prescribed circuit is formed and a back surface on an opposite side of the surface, the surface of the driver amplifier facing the first multilayer substrate, the back surface of the driver amplifier being configured to be separated from the first multilayer substrate, the back surfaces of the carrier amplifier and the peak amplifier each being in contact with the base member, the back surface of the driver amplifier being connected to a wiring layer provided on a surface of the second multilayer substrate, the wiring layer being connected to one end of a first via hole that penetrates through the second multilayer substrate and the first multilayer substrate, the other end of the first via hole being connected to the base member.

[0009] A high-frequency amplifier of one aspect of the present disclosure includes a first amplifier that amplifies a high-frequency signal inputted, and a second amplifier and a third amplifier that further amplify a signal outputted from the first amplifier, the high-frequency amplifier having: a first multilayer substrate; a second multilayer substrate stacked in coincidence with the first multilayer substrate; and a base member that mounts the first multilayer substrate and the second multilayer substrate, the first amplifier being mounted on the second multilayer substrate, the second amplifier and the third amplifier being mounted on the first multilayer substrate, the first amplifier, the second amplifier, and the third amplifier each having a surface on which a prescribed circuit is formed and a back surface on an opposite side of the surface, the surface of the first amplifier facing the first multilayer substrate, the back surface of the first amplifier being configured to be separated from the first multilayer substrate, the back surfaces of the second amplifier and the third amplifier each being in contact with the base member, the back surface of the first amplifier being connected to a wiring layer provided on a surface of the second multilayer substrate, the wiring layer being connected to one end of a first via hole that penetrates through the second multilayer substrate and the first multilayer substrate, the other end of the first via hole being connected to the base member, the power consumption of the first amplifier being smaller than the power consumption of each of the second amplifier and the third amplifier.

[0010] The high-frequency amplifier of one aspect of the present disclosure includes a driver amplifier that amplifies a high-frequency signal inputted, and a Doherty amplifier including a carrier amplifier and a peak amplifier that further amplify a signal outputted from the driver amplifier, the high-frequency amplifier having a first multilayer substrate, a second multilayer substrate stacked in coincidence with the first multilayer substrate, and a base member that mounts the first multilayer substrate and the second multilayer substrate, the driver amplifier being mounted on the second multilayer substrate, the carrier amplifier and the peak amplifier being mounted on the first multilayer substrate, the driver amplifier, the carrier amplifier, and the peak amplifier each having a surface on which a prescribed circuit is formed and a back surface on an opposite side of the surface, the back surface of the driver amplifier facing the first multilayer substrate, the surface of the driver amplifier being configured to be separated from the first multilayer substrate, the back surfaces of the carrier amplifier and the peak amplifier each being in contact with the base member, the back surface of the driver amplifier being connected to one end of a first via hole that penetrates a layer in contact with the first multilayer substrate and the first multilayer substrate as part of the second multilayer substrate, the other end of the first via hole being connected to the base member.

[0011] The high-frequency amplifier of one aspect of the present disclosure includes a driver amplifier that amplifies a high-frequency signal inputted, and a Doherty amplifier including a carrier amplifier and a peak amplifier that further amplify a signal outputted from the driver amplifier, the high-frequency amplifier having a first multilayer substrate, a second multilayer substrate stacked in coincidence with the first multilayer substrate, and a base member that mounts the first multilayer substrate and the second multilayer substrate, the driver amplifier being mounted on the second multilayer substrate, the carrier amplifier and the peak amplifier being mounted on the first multilayer substrate, the driver amplifier, the carrier amplifier, and the peak amplifier each having a surface on which a prescribed circuit is formed and a back surface on an opposite side of the surface, the back surface of the driver amplifier facing the first multilayer substrate, the surface of the driver amplifier being configured to be separated from the first multilayer substrate, the back surfaces of the carrier amplifier and the peak amplifier each being in contact with the base member, the back surface of the driver amplifier being connected to one end of a first via hole that penetrates a layer in contact with the first multilayer substrate and the first multilayer substrate as part of the second multilayer substrate, the other end of the first via hole being connected to the base member. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a cross-sectional view schematically showing the high-frequency amplifier of one aspect of the present disclosure.

[0013] Figure 2 is a block diagram illustrating a high-frequency amplifier of Figure 1 .

[0014] Figure 3 is a plan view of an upper layer of Figure 1 .

[0015] Figure 4 is a plan view of a lower layer of Figure 1 .

[0016] Figure 5 is a drive amplifier circuit diagram of Figure 1 .

[0017] Figure 6 is a diagram illustrating an upper layer corresponding to a circuit diagram of Figure 5 .

[0018] Figure 7 is a Doherty amplifier circuit diagram of Figure 1 .

[0019] Figure 8 is a diagram illustrating a lower layer corresponding to a circuit diagram of Figure 7 .

[0020] Figure 9 is a cross-sectional view schematically showing a high-frequency amplifier of another aspect of the present disclosure. DETAILED DESCRIPTION

[0021] Problem to be Solved by the Present Disclosure

[0022] In the case where a drive amplifier and a Doherty amplifier are mounted on a printed board, if the drive amplifier, the carrier amplifier, and the peak amplifier are mounted on the same plane, a large-sized printed board is required, and thus there is a problem in that it is difficult to realize a small-sized amplifier. On the other hand, as a general means for saving area for mounting, there is a method of coping with three-dimensional mounting (Patent Literature 2).

[0023] A high-frequency amplifier (high-frequency power amplifier) to which the present disclosure is directed amplifies an input high-frequency signal to a desired output, and thus has a large power to be processed, and a large current consumption or power consumption. As a result, heat generation is large. Therefore, in the case of three-dimensional mounting for the purpose of miniaturization, in which the plurality of high-frequency amplifiers are stacked in three dimensions, heat dissipation is likely to be impaired, as compared with the case of two-dimensional mounting, in which the plurality of high-frequency amplifiers are mounted on the same plane.

[0024] The present disclosure has been made in view of the actual situation as described above, and aims to provide a high-frequency amplifier which is small in size and good in heat dissipation.

[0025] Effects of the Present Disclosure

[0026] According to the present disclosure, a high-frequency amplifier that is small and has high heat dissipation can be provided.

[0027] [Explanation of Embodiments of the Present Disclosure]

[0028] First, the content of the embodiments of the present disclosure will be explained.

[0029] The high-frequency amplifier of the present disclosure is (1) a high-frequency amplifier including a driver amplifier that amplifies a high-frequency signal input thereto, and a Doherty amplifier including a carrier amplifier, a peak amplifier that further amplifies a signal output from the driver amplifier, the high-frequency amplifier having: a first multilayer substrate; a second multilayer substrate stacked in coincidence with the first multilayer substrate; and a base member that mounts the first multilayer substrate and the second multilayer substrate, the driver amplifier being mounted on the second multilayer substrate, the carrier amplifier and the peak amplifier being mounted on the first multilayer substrate, the driver amplifier, the carrier amplifier, and the peak amplifier each having a surface on which a prescribed circuit is formed and a back surface on an opposite side from the surface, the surface of the driver amplifier facing the first multilayer substrate, the back surface of the driver amplifier being configured to be separated from the first multilayer substrate, the back surfaces of the carrier amplifier and the peak amplifier each being in contact with the base member, the back surface of the driver amplifier being connected to a wiring layer provided on a surface of the second multilayer substrate, the wiring layer being connected to one end of a first via hole that penetrates the second multilayer substrate and the first multilayer substrate, the other end of the first via hole being connected to the base member.

[0030] The driver amplifier and the Doherty amplifier are configured by a two-layer structure composed of the first multilayer substrate and the second multilayer substrate. Thereby, the high-frequency amplifier can be made small. Further, the driver amplifier is disposed in opposition to the carrier amplifier and the peak amplifier, and thus the mounting density can be increased. Moreover, the back surfaces of the carrier amplifier and the peak amplifier are in contact with the base member, and thus the carrier amplifier and the peak amplifier can be cooled. Furthermore, the driver amplifier is cooled by a cooling passage composed of the first via hole, and thus a high-frequency amplifier that is small and has high heat dissipation can be provided.

[0031] (2) In one aspect of the high-frequency amplifier of the present disclosure, the base member further includes an input terminal for inputting the high-frequency signal from the outside, and an output terminal for outputting the signal amplified by the Doherty amplifier to the outside, the input terminal is connected to one end of a second via hole that penetrates the base member, the first multilayer substrate, and a layer that interfaces with the first multilayer substrate as a part of the second multilayer substrate, the other end of the second via hole is connected to the input of the driver amplifier, the output terminal is connected to one end of a third via hole that penetrates the layer that interfaces with the base member as a part of the first multilayer substrate and the base member, the other end of the third via hole is connected to the output of the Doherty amplifier.

[0032] The signal input to the input terminal passes through the second via hole, is input to the second multilayer substrate without being connected to any position of the first multilayer substrate, and passes through the third via hole to go to the output terminal, whereby a high-frequency amplifier that is smaller and has better heat dissipation can be provided.

[0033] (3) In one aspect of the high-frequency amplifier of the present disclosure, the output of the driver amplifier is connected to one end of a fourth via hole that penetrates the layer that interfaces with the second multilayer substrate as a part of the first multilayer substrate and the layer that interfaces with the first multilayer substrate as a part of the second multilayer substrate, the other end of the fourth via hole is connected to the input of the carrier amplifier and the input of the peak amplifier.

[0034] The signal from the driver amplifier passes through the fourth via hole to go to the output terminal, whereby a high-frequency amplifier that is further smaller and has better heat dissipation can be provided.

[0035] (4) In one aspect of the high-frequency amplifier of the present disclosure, the Doherty amplifier further includes a branch circuit, a phase adjustment circuit, and a Doherty network, the branch circuit and the phase adjustment circuit are provided on the second multilayer substrate, and the Doherty network is provided on the first multilayer substrate.

[0036] The branch circuit is provided on the second multilayer substrate, and thus adjustment of the phase of the high-frequency signal from the driver amplifier to the peak amplifier and the carrier amplifier becomes easy.

[0037] (5) In one aspect of the high-frequency amplifier of the present disclosure, the peak amplifier is configured to have a larger saturated output than the carrier amplifier, the phase adjustment circuit is provided between the branch circuit and the peak amplifier and on the second multilayer substrate, and delays the phase of the input signal of the peak amplifier.

[0038] The phase adjustment circuit is provided to the second multilayer substrate, so that adjustment of the phase of a high-frequency signal from the branch circuit to the peak amplifier becomes easy.

[0039] The high-frequency amplifier of the present disclosure is (6) a high-frequency amplifier including: a first amplifier that amplifies an input high-frequency signal; and a second amplifier and a third amplifier that further amplify a signal output from the first amplifier, the high-frequency amplifier having: a first multilayer substrate; a second multilayer substrate stacked in coincidence with the first multilayer substrate; and a base member that mounts the first multilayer substrate and the second multilayer substrate, the first amplifier being mounted to the second multilayer substrate, the second amplifier and the third amplifier being mounted to the first multilayer substrate, the first amplifier, the second amplifier, and the third amplifier each having a surface on which a prescribed circuit is formed and a back surface on an opposite side of the surface, the surface of the first amplifier facing the first multilayer substrate, the back surface of the first amplifier being configured to be separated from the first multilayer substrate, the back surfaces of the second amplifier and the third amplifier each being in contact with the base member, the back surface of the first amplifier being connected to a wiring layer provided on a surface of the second multilayer substrate, the wiring layer being connected to one end of a first via hole that penetrates the second multilayer substrate and the first multilayer substrate, the other end of the first via hole being connected to the base member, the power consumption of the first amplifier being smaller than the power consumption of each of the second amplifier and the third amplifier.

[0040] The two-layer configuration composed of the first multilayer substrate and the second multilayer substrate is adopted, so that downsizing of the high-frequency amplifier can be achieved. Further, the first amplifier is disposed in opposition to the second amplifier and the third amplifier, so that the mounting density can be improved. Moreover, the back surfaces of the second amplifier and the third amplifier, which generate more heat, are in contact with the base member, so that heat dissipation of the second amplifier and the third amplifier can be achieved. Furthermore, the first amplifier, which generates less heat than the second amplifier and the third amplifier, is dealt with by the heat dissipation passage composed of the first via hole, so that a small high-frequency amplifier with good heat dissipation can be provided.

[0041] (7) In one aspect of the high-frequency amplifier of the present disclosure, the base member further includes an input terminal for inputting the high-frequency signal from the outside, and an output terminal for outputting the signal amplified by the second amplifier and the third amplifier to the outside, the input terminal is connected to one end of a second via hole that penetrates the base member, the first multilayer substrate, and a layer that interfaces with the first multilayer substrate as a part of the second multilayer substrate, the other end of the second via hole is connected to the input of the first amplifier, the output terminal is connected to one end of a third via hole that penetrates a layer that interfaces with the base member as a part of the first multilayer substrate and the base member, the other end of the third via hole is connected to the outputs of the second amplifier and the third amplifier.

[0042] The signal input to the input terminal passes through the second via hole, is input to the second multilayer substrate without being connected to any position of the first multilayer substrate, and passes through the third via hole to go to the output terminal, whereby a high-frequency amplifier that is more compact and has better heat dissipation can be provided.

[0043] (8) In one aspect of the high-frequency amplifier of the present disclosure, the output of the first amplifier is connected to one end of a fourth via hole that penetrates a layer that interfaces with the second multilayer substrate as a part of the first multilayer substrate and a layer that interfaces with the first multilayer substrate as a part of the second multilayer substrate, the other end of the fourth via hole is connected to the inputs of the second amplifier and the third amplifier.

[0044] The signal from the first amplifier passes through the fourth via hole to go to the output terminal, whereby a high-frequency amplifier that is more compact and has better heat dissipation can be provided.

[0045] The high-frequency amplifier of the present disclosure is (9) a high-frequency amplifier including a driver amplifier that amplifies a high-frequency signal inputted, and a Doherty amplifier including a carrier amplifier, a peak amplifier that further amplifies a signal outputted from the driver amplifier, the high-frequency amplifier having: a first multilayer substrate; a second multilayer substrate that is stacked in coincidence with the first multilayer substrate; and a base member that mounts the first multilayer substrate and the second multilayer substrate, the driver amplifier being mounted on the second multilayer substrate, the carrier amplifier and the peak amplifier being mounted on the first multilayer substrate, the driver amplifier, the carrier amplifier, and the peak amplifier each having a surface on which a prescribed circuit is formed and a back surface on an opposite side from the surface, the back surface of the driver amplifier facing the first multilayer substrate, the surface of the driver amplifier being configured to be separated from the first multilayer substrate, the back surfaces of the carrier amplifier and the peak amplifier each being in contact with the base member, the back surface of the driver amplifier being connected to one end of a first via hole that penetrates a layer that is in contact with the first multilayer substrate and the first multilayer substrate as part of the second multilayer substrate, the other end of the first via hole being connected to the base member.

[0046] The driver amplifier and the Doherty amplifier are configured by a two-layer configuration composed of the first multilayer substrate and the second multilayer substrate. Thereby, miniaturization of the high-frequency amplifier can be achieved. Further, the driver amplifier is configured to face the carrier amplifier and the peak amplifier, and thus mounting density can be improved. Also, the back surfaces of the carrier amplifier and the peak amplifier are in contact with the base member, and thus heat dissipation of the carrier amplifier and the peak amplifier can be achieved. Moreover, the driver amplifier is addressed by the heat dissipation passage composed of the first via hole, and thus a high-frequency amplifier that is small and has good heat dissipation can be provided.

[0047] The high-frequency amplifier of the present disclosure is a high-frequency amplifier (10) including a first amplifier that amplifies a high-frequency signal inputted, and a second amplifier and a third amplifier that further amplify a signal outputted from the first amplifier, the high-frequency amplifier having: a first multilayer substrate; a second multilayer substrate that is stacked in coincidence with the first multilayer substrate; and a base member that mounts the first multilayer substrate and the second multilayer substrate, the first amplifier being mounted on the second multilayer substrate, the second amplifier and the third amplifier being mounted on the first multilayer substrate, the first amplifier, the second amplifier, and the third amplifier each having a surface on which a prescribed circuit is formed and a back surface on an opposite side of the surface, the back surface of the first amplifier facing the first multilayer substrate, the surface of the first amplifier being configured to be separated from the first multilayer substrate, the back surfaces of the second amplifier and the third amplifier each facing the base member, the back surface of the first amplifier being connected to one end of a first via hole that penetrates through a layer of the second multilayer substrate that faces the first multilayer substrate and the first multilayer substrate as a part of the layer, the other end of the first via hole being connected to the base member, the power consumption of the first amplifier being smaller than the power consumption of each of the second amplifier and the third amplifier.

[0048] The high-frequency amplifier is configured by a two-layer structure composed of the first multilayer substrate and the second multilayer substrate, and thus miniaturization of the high-frequency amplifier can be achieved. Further, the first amplifier is disposed in opposition to the second amplifier and the third amplifier, and thus the mounting density can be improved. Moreover, the back surfaces of the second amplifier and the third amplifier, which generate more heat, face the base member, and thus heat dissipation of the second amplifier and the third amplifier can be achieved. Furthermore, the first amplifier, which generates less heat than the second amplifier and the third amplifier, is dealt with by the heat dissipation passage composed of the first via hole, and thus a high-frequency amplifier that is small and has good heat dissipation can be provided.

[0049] [Details of Embodiments of the Present Disclosure]

[0050] Hereinafter, a specific example of the high-frequency amplifier of the present disclosure will be described with reference to the drawings. Figure 1 is a cross-sectional view schematically showing a high-frequency amplifier of one aspect of the present disclosure.

[0051] The high-frequency amplifier 1 is mounted on a communication device such as a base station device of a mobile communication system, for example, for amplifying a transmission signal. The high-frequency amplifier 1 has a base member La4. The base member La4 is a metal (for example, copper) plate that functions as a heat sink and an external terminal, and is disposed on a printed board 100 of the communication device.

[0052] The lower layer 10, the upper layer 20, and the cover member 25 are mounted on the base member La4. The lower layer 10 corresponds to the first multilayer substrate of the present disclosure, and the upper layer 20 corresponds to the second multilayer substrate of the present disclosure.

[0053] The lower layer 10 is configured to be sandwiched between the base member La4 and the upper layer 20. The lower layer 10 includes a first dielectric layer 11 (for example, thickness 0.25 to 0.35 mm), a third wiring layer La3 (for example, thickness 18 to 35 μm), and a second dielectric layer 12 (for example, thickness 0.8 to 1.0 mm). The first dielectric layer 11 is provided on the base member La4 (for example, thickness 0.25 mm), and a high-frequency circuit pattern that is a reference voltage for the base member La4 forming a GND surface is formed in the third wiring layer La3, and an active component such as a carrier amplifier 54 and a peak amplifier 64, and an inductor L and a capacitor C are mounted.

[0054] The carrier amplifier 54 and the peak amplifier 64 each have a surface 54a, 64a on which a prescribed circuit is formed, and a back surface 54b, 64b on the opposite side of the surface 54a, 64a, for example, on which no circuit is formed. The carrier amplifier 54 and the peak amplifier 64 are embedded in the first dielectric layer 11, and the surfaces 54a, 64a are each mounted on the third wiring layer La3 facing upward. The back surfaces 54b, 64b are each disposed facing downward in a manner so as to be in contact with the base member La4, and are fixedly attached to the base member La4 on which a sintering silver paste or a sintering copper paste is applied.

[0055] The upper layer 20 is laminated in a manner so as to coincide with the lower layer 10. The upper layer 20 includes a third dielectric layer 23 (for example, thickness 0.25 to 0.35 mm), a first wiring layer La1 (for example, thickness 18 to 35 μm), and a fourth dielectric layer 24 (for example, thickness 0.25 to 0.35 mm). A second wiring layer La2 is disposed between the third dielectric layer 23 and the lower layer 10 (second dielectric layer 12). The second wiring layer La2 (for example, thickness 35 μm) is, for example, a full-coated surface made of copper, and functions as a GND surface for the first wiring layer La1 and as a shield against electromagnetic waves generated between the upper layer 20 and the lower layer 10.

[0056] A high-frequency circuit pattern is formed in the first wiring layer La1, and an active component such as a drive amplifier 40, and an inductor L and a capacitor C are mounted.

[0057] The drive amplifier 40 has a surface 40a on which a prescribed circuit is formed, and a back surface 40b on the opposite side of the surface 40a, for example, on which no circuit is formed. The drive amplifier 40 is embedded in the fourth dielectric layer 24, and the surface 40a is mounted on the first wiring layer La1 in a manner so as to face the lower layer 10. The back surface 40b is disposed facing upward in a manner so as to be separated from the lower layer 10.

[0058] The upper layer 20 is covered with a lid member 25 made of metal. The driver amplifier 40 is mounted in a face down manner, and therefore, from the viewpoint of thermal management, the back surface 40b of the driver amplifier 40 is disposed so as to face upward in contact with a heat dissipation portion (zeroth wiring layer LaO) of the lid member 25. The heat dissipation portion (zeroth wiring layer LaO) is formed of a thin metal film layer for signal wiring, like the other wiring layers. Also, the heat dissipation portion (zeroth wiring layer LaO) is in contact with a GND via (for example, φ 300 μm) (heat dissipation vias 15d, 15c, 15b, 15a: corresponding to the first via of the present disclosure) in the vicinity. Specifically, the heat dissipation vias 15a to 15d penetrate the upper layer 20 and the lower layer 10, one end of the heat dissipation vias is connected to the zeroth wiring layer LaO, and the other end of the heat dissipation vias is connected to the base member La4. Thus, a heat dissipation path (hereinafter, referred to as the first heat dissipation path) from the driver amplifier 40 to the base member La4 is formed.

[0059] Note that an electrical path between the first wiring layer LaI of the upper layer 20 and the third wiring layer La3 of the lower layer 10 is secured using signal vias 14b, 14a (corresponding to the fourth via of the present disclosure). Specifically, the signal vias 14b, 14a penetrate the third dielectric layer 23 of the upper layer 20 and the second dielectric layer 12 of the lower layer 10, one end of the signal vias is connected to the first wiring layer LaI (output of the driver amplifier 40), and the other end of the signal vias is connected to the third wiring layer La3 (input of the carrier amplifier 54 and input of the peak amplifier 64).

[0060] Further, an electrical path between the first wiring layer LaI and the second wiring layer La2 is secured using a signal via 17a that penetrates the third dielectric layer 23.

[0061] Also, an electrical path between the first wiring layer LaI and the base member La4 is secured using signal vias 13c, 13b, 13a (corresponding to the second via of the present disclosure) to secure the paths, respectively. Specifically, the signal vias 13a to 13c penetrate the base member La4, the lower layer 10, and the third dielectric layer 23 of the upper layer 20, one end of the signal vias is connected to the input terminal RFin, and the other end of the signal vias is connected to the first wiring layer LaI (input of the driver amplifier 40). On the other hand, an electrical path between the third wiring layer La3 and the base member La4 is secured using a signal via 16a (corresponding to the third via of the present disclosure). Specifically, the signal via 16a penetrates the first dielectric layer 11 of the lower layer 10 and the base member La4, one end of the signal via is connected to the output terminal RFout, and the other end of the signal via is connected to the third wiring layer La3 (output of the Doherty amplifier 50).

[0062] Thus, the upper layer 20 is stacked in register with the lower layer 10, and the drive amplifier 40, the carrier amplifier 54, and the peak amplifier 64 are three-dimensionally mounted, so that the high-frequency amplifier 1 can be miniaturized to a module size of 6 mm square by 2.2 mm in thickness.

[0063] Further, in the high-frequency amplifier 1, wire bond connections are not required. Thus, for example, a large panel of about 500 mm square can be used in the manufacturing process, and 6,000 panels of 6 mm square can be obtained from the panel, so that a large reduction in cost resulting from a reduction in processing costs and material costs can be achieved.

[0064] Here, in the case where the upper layer 20 described in Figure 3 is made to coincide with the lower layer 10 described in Figure 4 , the input terminal of the drive amplifier 40 and the input terminal of the carrier amplifier 54 are opposed in the vertical direction, and the distance between the input terminal of the drive amplifier 40 and the input terminal of the carrier amplifier 54 is, for example, 1 mm or less in the vertical direction. This distance is sometimes significantly shorter than in the case where the drive amplifier 40 and the carrier amplifier 54 are arranged on the same plane. In such a physical arrangement, if the phase difference between the two input signals is in the range of ±π / 2, interference occurs between the two input signals, so that the operation of the drive amplifier 40 becomes unstable. In detail, the output signal of the drive amplifier 40 is fed back to the input, and the drive amplifier 40 can oscillate.

[0065] Thus, in the high-frequency amplifier 1, the electrical length from the input terminal of the drive amplifier 40 to the output terminal of the carrier amplifier 54, that is, the electrical length obtained by adding the length of the wiring to the amount corresponding to the chip components is converted into the phase of the input signal of the wavelength λ, or the delay time of the propagation of the input signal of the wavelength λ from the input terminal of the drive amplifier 40 to the output terminal of the carrier amplifier 54 including the chip components in the middle is converted into the phase of the input signal of the wavelength λ, and is set to a phase of (2n + 1)π between the terminals. n is an integer of 0 or more.

[0066] To achieve this, the path from the drain output of the drive amplifier 40 until reaching the branching circuit 51 is, for example, as shown by the curved pattern 49 of the upper layer 20, substantially meanders to the right half from the center, or the path from the output of the branching circuit 51 to the via 52a is intentionally formed by a curve rather than a straight line as shown by the curved pattern 52 of the lower layer 10. Figure 3 Figure 3

[0067] ​​Thus, the electrical length from the input terminal of the drive amplifier 40 to the output terminal of the carrier amplifier 54 is set to a phase of (2n+1)×π. Therefore, even when signal feedback is applied—that is, when feedback is applied that causes a portion of the output signal to return from the output of the carrier amplifier 54 towards the input of the drive amplifier 40—this becomes a region where the drive amplifier 40 does not generate instability; in short, it becomes a negative feedback region, not a 2nπ positive feedback region that generates instability. Therefore, even with a two-layer structure, amplifier 1 can be stabilized.

[0068] Furthermore, in a typical Doherty amplifier, the phase difference between the carrier amplifier and the peak amplifier is set to π / 2, but in the high-frequency amplifier 1, this phase difference is specifically set to π. That is, the phase difference between the RF signal at the output terminal of the carrier amplifier 54 and the RF signal at the output terminal of the peak amplifier 64 is set to a range from π / 2 to 3π / 2.

[0069] As a result, the electromagnetic waves emitted from the carrier amplifier 54 and the electromagnetic waves emitted from the peak amplifier 64 are adjacent to each other and cancel each other out, thus suppressing the electromagnetic waves emitted to the outside of the high-frequency amplifier 1 to a small extent.

[0070] It should be noted that, through Figure 3 The phase adjustment circuit 61 described in the text is in... Figure 7 , Figure 8 The input matching circuits 53 and 63, the output matching circuits 55 and 65, and the transmission line TRL1 described herein (in) Figure 4 The 90° transmission line 56a described herein synchronizes the phase of the carrier amplifier 54 and the phase of the peak amplifier 64 at the output terminal RFout.

[0071] Figure 2 Yes Figure 1 A block diagram illustrating a high-frequency amplifier is provided. Furthermore, Figure 3 yes Figure 1 Top view of the upper level Figure 4 yes Figure 1 The top view of the lower level.

[0072] The high-frequency amplifier 1 has a driver amplifier 40 and a Doherty amplifier 50 located after the driver amplifier 40, and is configured, for example, to amplify signals in the frequency band of 5 GHz to 6 GHz.

[0073] The driver amplifier 40 amplifies the RF (Radio Frequency) signal, defined by wavelength λ, input to the input terminal RFin to the level that the Doherty amplifier 50 can amplify to the specified transmission power.

[0074] The Doherty amplifier 50 includes a branch circuit 51, a phase adjustment circuit 61, a carrier amplifier 54, a peak amplifier 64, and Doherty networks 56, 66, which further amplify the RF signal amplified by the driver amplifier 40 and output from an output terminal RFout.

[0075] The driver amplifier 40, the carrier amplifier 54, and the peak amplifier 64 are amplifiers using, for example, GaN-HEMT (High Electron Mobility Transistor) as an amplifying element. The driver amplifier 40, the carrier amplifier 54, and the peak amplifier 64 each have a gate pad provided on one side of a rectangle and a drain pad provided on a side opposite to the gate pad.

[0076] Note that the driver amplifier 40, the carrier amplifier 54, and the peak amplifier 64 each have a source pad provided on both sides of the gate pad. However, in the case of the driver amplifier 40, the two source pads are connected to GND formed in the upper layer 20. On the other hand, in the case of the carrier amplifier 54 and the peak amplifier 64, the source pads are connected to the base member La4 via the back surfaces 54b, 64b described below. Figure 1 Thus, GND is secured, and a heat dissipation path (hereinafter referred to as a second heat dissipation path) from the carrier amplifier 54 and the peak amplifier 64 to the base member La4 is formed.

[0077] It is considered that the second heat dissipation path is superior in heat dissipation to the first heat dissipation path. In the second heat dissipation path, the source pads of the carrier amplifier 54 and the peak amplifier 64 are each connected to the base member La4 via the back surfaces 54b, 64b. The base member La4 is a plate made of metal (for example, copper) and is superior in heat dissipation. On the other hand, in the first heat dissipation path, the source pad of the driver amplifier 40 is connected to the heat dissipation portion (the zeroth wiring layer Lo) via the back surface 40b and to the base member La4 via the nearby GND via hole. The zeroth wiring layer Lo is a metal thin film for signal wiring and is inferior to the base member La4, which is a plate made of metal (for example, copper), in terms of heat dissipation efficiency. As a result, the heat dissipation portion (the zeroth wiring layer Lo) restricts the conduction of heat, and it is considered that the second heat dissipation path is superior in heat dissipation to the first heat dissipation path.

[0078] With respect to the first heat dissipation path, it is conceivable that the heat dissipation efficiency of the first heat dissipation path can be improved by further enlarging the diameters of the heat dissipation via holes 15a, 15b, 15c, 15d or by additionally providing heat dissipation via holes in parallel with the current heat dissipation path (the first heat dissipation path) in the heat dissipation path connecting the heat dissipation portion (the zeroth wiring layer Lo) and the base member La4.

[0079] Figure 3 The upper layer 20 andFigure 4 The lower layer 10 shown has planes of roughly similar shape, all formed, for example, 6 mm square.

[0080] via such Figure 1 The RF signal, which is input to the input terminal RFin (signal via 13a) from the signal wiring 101a on the printed circuit board 100 of the communication device shown, is transmitted from the signal wiring 101a on the printed circuit board 100 of the communication device. Figure 1 The base member La4 described in the text penetrates the lower layer 10, from... Figure 1 The signal vias 13a, 13b, and 13c shown are used to input signals to the lower layer 10 without being connected to any location there. Figure 3 When observing, the lower left corner of the upper layer 20 is visible. The driver amplifier 40 is installed near the lower left of the upper layer 20. The RF signal amplified by the driver amplifier 40 is as follows... Figure 3 It makes a sharp turn as shown by curve pattern 49. Specifically, heading towards that... Figure 3 When observing from the top of the upper layer 20, turn right and proceed along that top edge to the right, then turn right again and proceed to the bottom of the upper layer 20, reaching the branch circuit 51 located on the upper layer 20, which is the same as the drive amplifier 40.

[0081] Branch circuit 51, for example, is a Wilkinson type distributor that equally distributes the RF signal amplified by drive amplifier 40 to the input path on the peak amplifier side and the input path on the carrier amplifier side.

[0082] One of the RF signals (the input path on the carrier amplifier side) after being distributed by branch circuit 51 passes through the prescribed curve pattern 52 and from the... Figure 3 During observation, a via 52a is formed near the lower edge of the upper layer 20 to reach the lower layer 10. This RF signal, for example, originates from the via... Figure 1 The signal paths of the signal vias 14a and 14b shown are the same. In contrast, another RF signal (the input path on the peak amplifier side) distributed by the branch circuit 51 reaches the phase adjustment circuit 61, which is located on the upper layer 20, just like the driver amplifier 40.

[0083] Phase adjustment circuit 61 delays the phase of the input signal to peak amplifier 64 by an amount corresponding to a specified distribution constant. For example, it delays the phase by 90°. The RF signal passing through phase adjustment circuit 61 from... Figure 3 During observation, a via 61a formed near the lower edge of the upper layer 20 leads to the lower layer 10. The RF signal also travels from the via... Figure 1 The signal paths of the signal vias 14a and 14b shown are the same.

[0084] Note that, in the present embodiment, an example in which the phase adjustment circuit 61 is not provided between the branch circuit 51 and the carrier amplifier 54 but is provided between the branch circuit 51 and the peak amplifier 64 is described. However, the present disclosure is not limited to this example. For example, the phase adjustment circuit can be provided not between the branch circuit 51 and the peak amplifier 64 but between the branch circuit 51 and the carrier amplifier 54 to delay the phase of the input signal of the carrier amplifier 54.

[0085] The Doherty amplifier 50 of the present embodiment is an asymmetric Doherty amplifier, and the peak amplifier 64 and the carrier amplifier 54 exhibit different maximum output intensities with respect to the input RF signal. For example, the peak amplifier 64 has a saturated output (size) that is about twice as large as that of the carrier amplifier 54, and the peak amplifier 64 starts to operate in amplification when the output of the carrier amplifier 54 reaches the saturated region. Specifically, the carrier amplifier 54 operates in class AB or class B. The peak amplifier 64 operates in class C. At the time of a transient power, the carrier amplifier 54 operates without operating the peak amplifier 64, and thus the power efficiency is improved. At the time of a large transient power, both the carrier amplifier 54 and the peak amplifier 64 operate, and thus a high power efficiency can be maintained and the saturated power can be increased.

[0086] As one example, the output of the driver amplifier 40, the carrier amplifier 54, and the peak amplifier 64 is described. The driver amplifier 40 uses an amplifier having an output of 10 W, the carrier amplifier 54 uses an amplifier having an output of 15 W, and the peak amplifier 64 uses an amplifier having an output of 30 W. Here, 10 W output specifically indicates the size of a FET (Field Effect Transistor), and does not always output 10 W, but is used in the sense of having a size sufficient to achieve an output of 10 W.

[0087] The RF signal amplified by the carrier amplifier 54 reaches the Doherty network 56 on the carrier amplifier side provided in the lower layer 10. A 90° transmission line (also referred to as a λ / 4 line) 56a is provided in the Doherty network 56. Thus, the RF signal amplified by the carrier amplifier 54 passes through the 90° transmission line 56a, is synthesized with the output signal of the peak amplifier 64 described later, and is output from the output terminal RFout provided in the upper right corner portion of the lower layer 10 when viewed in the arrow A direction. Figure 4 The output terminal RFout provided in the upper right corner portion of the lower layer 10 outputs when viewed in the arrow A direction.

[0088] On the other hand, the RF signal amplified by the peak amplifier 64 reaches the Doherty network 66 on the peak amplifier side provided in the lower layer 10, is synthesized with the output signal of the carrier amplifier 54, and is output from the output terminal RFout provided in the upper right corner portion of the lower layer 10 when viewed in the arrow A direction. Figure 1The signal path through the signal via 16a shown is output from the output terminal RFout. The signal output from the output terminal RFout is via, as shown in... Figure 1 The signal wiring 101b shown on the printed circuit board 100 of the communication device propagates from the high-frequency amplifier 1 to the outside. It should be noted that the Doherty network 56 on the carrier amplifier side and the Doherty network 66 on the peak amplifier side are equivalent to the Doherty network of this disclosure.

[0089] Figure 5 yes Figure 1 The circuit diagram of the driver amplifier. Figure 6 It is to Figure 5 The circuit diagram corresponds to the upper-level diagram that provides further explanation. Additionally, Figure 7 yes Figure 1 Doherty amplifier circuit diagram. Figure 8 It is to Figure 7 The diagram below the circuit diagram is used to explain the underlying circuit.

[0090] from Figure 5 The RF signal input at the shown input terminal RFin is fed into the gate of the driver amplifier 40 via the input matching circuit 30 (inductor L1 and capacitors C1 to C4, a total of 5). The gate bias is supplied from the power supply Vg via inductor L2. Capacitor C5 is a bypass capacitor for the power supply Vg, and resistor R1 is an adjustment resistor.

[0091] The drain output of the driver amplifier 40 is supplied to the branch circuit 51 via the output matching circuit 41 (inductors L4 and L5, capacitors C7 to C9). A drain bias voltage is supplied from the power supply Vd via inductor L3. Capacitor C6 is a bypass capacitor for the power supply Vd.

[0092] Next, as Figure 7 As shown, in branch circuit 51, the RF signal from the driver amplifier 40 is evenly distributed to the matching circuit composed of L11 and C24 and the matching circuit composed of C23, L12 and C29.

[0093] The RF signal, whose phase has been adjusted by a matching circuit consisting of L11 and C24, is transmitted via... Figure 3 The curve pattern 52 and via 52a, as described, reach the lower layer 10 and proceed to the carrier amplifier 54. The RF signal reaching the lower layer 10 is input to the gate of the carrier amplifier 54 via the input matching circuit 53 (capacitors C31, C11-14). A gate bias voltage is supplied from the power supply Vg via inductor L6. Capacitor C15 is a bypass capacitor for the power supply Vg, and resistor R4 is an adjustment resistor.

[0094] The drain output of the carrier amplifier 54 is supplied to the carrier amplifier side Doherty network 56 via the capacitor C26 for DC blocking. The drain bias is supplied from the power supply Vd via the inductor L9. The capacitor C21 is a bypass capacitor for the power supply Vd.

[0095] The carrier amplifier side Doherty network 56 is composed of an output matching circuit 55 composed of a transmission line TRL2, a capacitor C25, and a transmission line TRL1 (including a 90° transmission line 56a described in Figure 4

[0096] On the other hand, the RF signal, which is divided by the branch circuit 51 and whose phase is adjusted by the matching circuit composed of C23, L12, and C29, is further adjusted in phase by the phase adjustment circuit 61 (inductors L15, L16, and capacitor C32), reaches the lower layer 10 via the via 61a, and goes to the peak amplifier 64.

[0097] The RF signal, which has reached the lower layer 10, is input to the gate of the peak amplifier 64 via the input matching circuit 63 (inductor L7, capacitors C16 to C19). The gate bias is supplied from the power supply Vg via the inductor L8. The capacitor C20 is a bypass capacitor for the power supply Vg, and the resistor R5 is an adjustment resistor.

[0098] The drain output of the peak amplifier 64 is supplied to the peak amplifier side Doherty network 66 via the capacitor C28 for DC blocking. The drain bias is supplied from the power supply Vd via the inductor L10. The capacitor C22 is a bypass capacitor for the power supply Vd.

[0099] The peak amplifier side Doherty network 66 is composed of an output matching circuit 65 composed of two stages of a capacitor C27 and a capacitor C10, and a transmission line TRL4.

[0100] If the outputs of the aforementioned amplifiers are compared, it is considered that the magnitude of the current consumption or the power consumption and the heat generation as a result thereof of each of the amplifiers increases in the order of the driver amplifier 40, the carrier amplifier 54, and the peak amplifier 64. In the high-frequency amplifier 1 of the present embodiment, it is configured that the peak amplifier 64 and the carrier amplifier 54, which generate more heat, are dealt with by the second heat dissipation passage which has a higher heat dissipation efficiency, and the driver amplifier 40, which generates less heat than the peak amplifier 64 and the carrier amplifier 54, is dealt with by the first heat dissipation passage. By being configured in this way, the high-frequency amplifier 1 can provide a high-frequency amplifier which is small and has a good heat dissipation property.

[0101] ​The high-frequency amplifier 1 deals with the peak amplifier 64, the carrier amplifier 54 through the second heat dissipation passage, and deals with the driver amplifier 40 through the first heat dissipation passage, and thus, as shown in Figure 1 the RF signal input to the input terminal RFin (signal via hole 13a) is passed through the signal via holes 13a, 13b, 13c shown in Figure 1 , and is input to the lower left corner portion of the upper layer 20 as viewed in Figure 3 . Further, the RF signal distributed by the branching circuit 51 is input to the peak amplifier 64, the carrier amplifier 54 provided in the lower layer 10, and thus this RF signal is passed through the same passage as the signal path through the signal via holes 14a, 14b shown in Figure 1 . By passing through these signal passages, the high-frequency amplifier 1 can provide a small high-frequency amplifier with good heat dissipation.

[0102] It should be considered that the embodiments disclosed this time are illustrative in all respects but not restrictive. The scope of the present disclosure is not shown by the above-mentioned meaning but by the claims, and it is intended to include all modifications within the meaning and scope equivalent to the claims.

[0103] Further, in the case of manufacturing the high-frequency amplifier 1 explained in Figure 1 , for example, the second dielectric layer 12 of the lower layer 10 can be grown in both the surface side and the back side as a reference. In detail, the single face (surface) of the second dielectric layer 12 of the lower layer 10 explained in Figure 1 is provided in the order of the second wiring layer La2, the third dielectric layer 23 of the upper layer 20, the first wiring layer La1, the fourth dielectric layer 24. In contrast, the other single face (back) of the second dielectric layer 12 of the lower layer 10 can be provided in the order of the third wiring layer La3 of the lower layer 10, the first dielectric layer 11. However, the present disclosure is not limited to this example, and for example, it can be grown in either direction of the surface side or the back side.

[0104] Figure 9 is a cross-sectional view of a high-frequency amplifier illustrating another aspect of the present disclosure. Note that the same reference numerals are attached to the configurations having the same function as the high-frequency amplifier 1 of Figure 1 , and detailed explanation is omitted.

[0105] This Figure 9 high-frequency amplifier 1 also has a base member La4 on which the lower layer 10, the upper layer 20 are mounted. Note that the high-frequency amplifier 1 of this example does not mount a cover member.

[0106] The upper layer 20 includes a fourth dielectric layer 24 (e.g., thickness 0.4 mm), a first wiring layer La1 (e.g., thickness 10 to 35 μm), and a third dielectric layer 23 (e.g., thickness 0.1 mm). The third dielectric layer 23 is thinner than the third dielectric layer 23 described in Figure 1 In manufacturing the high-frequency amplifier 1, first, the first wiring layer La1 is provided on one surface of the third dielectric layer 23. Next, after mounting active components such as the driver amplifier 40 and the inductor L and the capacitor C on one surface of the first wiring layer La1, the fourth dielectric layer 24 is disposed.

[0107] The driver amplifier 40 is provided on the fourth dielectric layer 24, and a surface 40a of the driver amplifier 40 is disposed so as to be separated from the lower layer 10 and mounted on one surface of the first wiring layer La1. A back surface 40b of the driver amplifier 40 is disposed so as to face the lower layer 10.

[0108] A second wiring layer La2 (e.g., thickness 10 to 35 μm) is disposed between the fourth dielectric layer 24 and the lower layer 10 (the second dielectric layer 12). The second wiring layer La2 forms a GND surface for the first wiring layer La1.

[0109] The lower layer 10 includes a first dielectric layer 11 (e.g., thickness 0.28 mm), a third wiring layer La3 (e.g., thickness 10 to 35 μm), and a second dielectric layer 12 (e.g., thickness 0.2 mm). The second dielectric layer 12 is thinner than the second dielectric layer 12 described in Figure 1 In manufacturing the high-frequency amplifier 1, the second dielectric layer 12 is disposed on one surface of the above-described second wiring layer La2, and the third wiring layer La3 is provided on one surface of the second dielectric layer 12. Next, after mounting active components such as the carrier amplifier 54 and the peak amplifier 64 and the inductor L and the capacitor C on one surface of the third wiring layer La3, the first dielectric layer 11 is disposed.

[0110] The carrier amplifier 54 and the peak amplifier 64 are provided on the first dielectric layer 11, and surfaces 54a, 64a are each mounted on one surface of the third wiring layer La3 so as to face upward. Back surfaces 54b, 64b are each disposed so as to face downward in a manner to contact a base member La4, and are fixedly attached to the base member La4 on which a sintered silver paste or a sintered copper paste is applied.

[0111] A base member La4 (e.g., thickness 0.15 to 0.25 mm) that forms a GND surface is disposed on one surface of the first dielectric layer 11.

[0112] Also, as Figure 9As shown, the back surface 40b of the drive amplifier 40 is in contact with the heat dissipation via hole 15a (corresponding to the first via hole of the present disclosure). Specifically, the heat dissipation via hole 15a, which penetrates the layer of the upper layer 20, which is the fourth dielectric layer 24 and the lower layer 10, connected at one end to the back surface 40b of the drive amplifier 40 and at the other end to the base member La4. Thus, in the same manner as the first heat dissipation path shown in Figure 1 The third heat dissipation path, which functions in the same manner, is formed from the drive amplifier 40 to the base member La4. However, in contrast to the case where the first heat dissipation path shown in Figure 1 is connected to the heat dissipation portion (zeroth wiring layer LaO) and connected to the base member La4 via the nearby GND via hole, the third heat dissipation path shown is not connected to the wiring layer corresponding to the heat dissipation portion in Figure 9 Figure 1 Thus, it is considered that the third heat dissipation path in Figure 9 is superior in heat dissipation properties to the first heat dissipation path in Figure 1

[0113] Note that, in the same manner as Figure 1 , the electrical path between the first wiring layer LaI of the upper layer 20 and the third wiring layer La3 of the lower layer 10 is ensured using the signal via hole 14a.

[0114] Further, the electrical path between the first wiring layer LaI and the base member La4 is ensured using the signal via holes 13a to 13c, respectively. On the other hand, the electrical path between the third wiring layer La3 and the base member La4 is ensured using the signal via hole 16a.

[0115] Explanation of Reference Signs

[0116] ​​1: high frequency amplifier, 10: lower layer, 11: first dielectric layer, 12: second dielectric layer, 13a, 13b, 13c, 14a, 14b, 16a, 17a: signal via, 15a, 15b, 15c, 15d: heat dissipation via, 20: upper layer, 23: third dielectric layer, 24: fourth dielectric layer, 25: cover member, 30: input matching circuit, 40: driver amplifier, 40a: front surface, 40b: back surface, 41: output matching circuit, 49: meander pattern, 50: Doherty amplifier, 51: branch circuit, 52: meander pattern, 52a: via, 53: input matching circuit, 54: carrier amplifier, 54a: front surface, 54b: back surface, 55: output matching circuit, 56, 66: Doherty network, 56a: 90° transmission line, 61: phase adjustment circuit, 61a: via, 63: input matching circuit, 64: peak amplifier, 64a: front surface, 64b: back surface, 65: output matching circuit, 100: printed board, 101a, 101b: wiring on printed board, La0: zero wiring layer (heat dissipation portion), La1: first wiring layer, La2: second wiring layer, La3: third wiring layer, La4: base member, RFin: input terminal, RFout: output terminal, L, L1-L12, L15, L16: inductor, C, C1-C29, C31, C32: capacitor, R1, R3-R5: resistor, TRL1-TRL4: transmission line, Vd, Vg: power supply.

Claims

1. A high-frequency amplifier comprising: a driver amplifier amplifying a high-frequency signal to be inputted; and a Doherty amplifier including a carrier amplifier, a peak amplifier, further amplifying a signal outputted from the driver amplifier, the high-frequency amplifier having: a first multilayer substrate; a second multilayer substrate stacked in coincidence with the first multilayer substrate; and a base member mounting the first multilayer substrate and the second multilayer substrate, the driver amplifier being mounted on the second multilayer substrate, the carrier amplifier and the peak amplifier being mounted on the first multilayer substrate, the driver amplifier, the carrier amplifier, and the peak amplifier each having a surface on which a prescribed circuit is formed and a back surface on an opposite side from the surface, the surface of the driver amplifier being opposed to the first multilayer substrate, the back surface of the driver amplifier being configured to be separated from the first multilayer substrate, the back surfaces of the carrier amplifier and the peak amplifier each being in contact with the base member, the back surface of the driver amplifier being connected to a wiring layer provided on a surface of the second multilayer substrate, the wiring layer being connected to one end of a first via hole penetrating through the second multilayer substrate and the first multilayer substrate, the other end of the first via hole being connected to the base member, the base member being a metal plate.

2. The high-frequency amplifier according to claim 1, wherein the base member further has an input terminal through which the high-frequency signal is inputted from the outside and an output terminal through which a signal amplified by the Doherty amplifier is outputted to the outside, the input terminal is connected to one end of a second via hole penetrating through the base member, the first multilayer substrate, and a layer in contact with the first multilayer substrate as a part of the second multilayer substrate, the other end of the second via hole being connected to an input of the driver amplifier, the output terminal is connected to one end of a third via hole penetrating through a layer in contact with the base member as a part of the first multilayer substrate and the base member, the other end of the third via hole being connected to an output of the Doherty amplifier.

3. The high-frequency amplifier according to claim 2, wherein an output of the driver amplifier is connected to one end of a fourth via hole penetrating through a layer in contact with the second multilayer substrate as a part of the first multilayer substrate and a layer in contact with the first multilayer substrate as a part of the second multilayer substrate, the other end of the fourth via hole being connected to an input of the carrier amplifier and an input of the peak amplifier.

4. The high-frequency amplifier according to claim 3, wherein the Doherty amplifier further includes a branch circuit, a phase adjustment circuit, and a Doherty network, the branch circuit and the phase adjustment circuit are provided on the second multilayer substrate, the Doherty network is provided on the first multilayer substrate.

5. The high-frequency amplifier according to claim 4, wherein the peak amplifier is configured to have a larger saturated output than the carrier amplifier, The phase adjustment circuit is provided between the branch circuit and the peak amplifier and on the second multilayer substrate, and delays the phase of an input signal of the peak amplifier.

6. A high-frequency amplifier comprising: a first amplifier that amplifies a high-frequency signal inputted; and a second amplifier and a third amplifier that further amplify a signal outputted from the first amplifier, the high-frequency amplifier has: a first multilayer substrate; a second multilayer substrate that is stacked in coincidence with the first multilayer substrate; and a base member that mounts the first multilayer substrate and the second multilayer substrate, the first amplifier is mounted on the second multilayer substrate, the second amplifier and the third amplifier are mounted on the first multilayer substrate, the first amplifier, the second amplifier, and the third amplifier each have a surface on which a prescribed circuit is formed and a back surface on the opposite side of the surface, the surface of the first amplifier faces the first multilayer substrate, and the back surface of the first amplifier is configured to be separated from the first multilayer substrate, the back surfaces of the second amplifier and the third amplifier each face the base member, the back surface of the first amplifier is connected to a wiring layer provided on a surface of the second multilayer substrate, the wiring layer is connected to one end of a first via that penetrates the second multilayer substrate and the first multilayer substrate, and the other end of the first via is connected to the base member, the power consumption of the first amplifier is smaller than the power consumption of each of the second amplifier and the third amplifier, the base member is a metal plate.

7. The high-frequency amplifier according to claim 6, wherein the base member further has an input terminal through which the high-frequency signal is inputted from the outside and an output terminal through which a signal amplified by the second amplifier and the third amplifier is outputted to the outside, the input terminal is connected to one end of a second via that penetrates the base member, the first multilayer substrate, and a layer that faces the first multilayer substrate as a part of the second multilayer substrate, and the other end of the second via is connected to an input of the first amplifier, the output terminal is connected to one end of a third via that penetrates a layer that faces the base member as a part of the first multilayer substrate and the base member, and the other end of the third via is connected to outputs of the second amplifier and the third amplifier.

8. The high-frequency amplifier according to claim 7, wherein an output of the first amplifier is connected to one end of a fourth via that penetrates a layer that faces the second multilayer substrate as a part of the first multilayer substrate and a layer that faces the first multilayer substrate as a part of the second multilayer substrate, and the other end of the fourth via is connected to inputs of the second amplifier and the third amplifier.

9. A high-frequency amplifier comprising: a driver amplifier that amplifies a high-frequency signal inputted; and a Doherty amplifier that includes a carrier amplifier and a peak amplifier, and further amplifies a signal outputted from the driver amplifier, The high-frequency amplifier has: a first multilayer substrate; a second multilayer substrate stacked in alignment with the first multilayer substrate; and a base member on which the first multilayer substrate and the second multilayer substrate are mounted, the drive amplifier is mounted on the second multilayer substrate, the carrier amplifier and the peak amplifier are mounted on the first multilayer substrate, the drive amplifier, the carrier amplifier, and the peak amplifier each have a surface on which a prescribed circuit is formed and a back surface on an opposite side of the surface, the back surface of the drive amplifier faces the first multilayer substrate, and the surface of the drive amplifier is configured to be separated from the first multilayer substrate, the back surfaces of the carrier amplifier and the peak amplifier each face the base member, the back surface of the drive amplifier is connected to one end of a first via hole that penetrates through a layer of the second multilayer substrate that faces the first multilayer substrate and the first multilayer substrate, and the other end of the first via hole is connected to the base member, the base member is a metal plate.

10. A high-frequency amplifier comprising: a first amplifier that amplifies a high-frequency signal inputted; and a second amplifier and a third amplifier that further amplify a signal outputted from the first amplifier, The high-frequency amplifier has: a first multilayer substrate; a second multilayer substrate stacked in alignment with the first multilayer substrate; and a base member on which the first multilayer substrate and the second multilayer substrate are mounted, the first amplifier is mounted on the second multilayer substrate, the second amplifier and the third amplifier are mounted on the first multilayer substrate, the first amplifier, the second amplifier, and the third amplifier each have a surface on which a prescribed circuit is formed and a back surface on an opposite side of the surface, the back surface of the first amplifier faces the first multilayer substrate, and the surface of the first amplifier is configured to be separated from the first multilayer substrate, the back surfaces of the second amplifier and the third amplifier each face the base member, the back surface of the first amplifier is connected to one end of a first via hole that penetrates through a layer of the second multilayer substrate that faces the first multilayer substrate and the first multilayer substrate, and the other end of the first via hole is connected to the base member, the power consumption of the first amplifier is smaller than the power consumption of each of the second amplifier and the third amplifier, the base member is a metal plate.

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