Dual-source spectral CT high-resolution imaging device and method

Abstract

The application discloses a dual-source spectral CT high-resolution imaging device and method, which is installed on a CT sliding ring rotating support and comprises a high-energy imaging assembly and a low-energy imaging assembly; the high-energy imaging assembly and the low-energy imaging assembly each comprise an X-ray emitting device for emitting X-rays, an amorphous silicon detector and an amorphous selenium detector for collecting digital images. The amorphous silicon detector and the amorphous selenium detector are combined into a larger detector, and the amorphous silicon detector and the amorphous selenium detector independently image and reconstruct three-dimensional data; the image space resolution of the amorphous selenium detector is higher, and the image density resolution of the amorphous silicon detector is higher; and after the reconstruction is completed, the two groups of images are fused, so that the fused images can maintain higher space resolution and better density resolution.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of radiotherapy, and particularly relates to a dual-source spectral CT high-resolution imaging device and method. BACKGROUND

[0002] Dual-energy CT technology refers to that two different energy spectrum distributions of X-ray sources are used to scan a detected object, original data under two different energy spectrum distributions are obtained, and then information such as atomic number, electron density and attenuation coefficient of the detected object is reconstructed by using the data and through corresponding image processing algorithms. The advantage of the dual-energy CT technology is that not only the attenuation coefficient image in single-energy CT imaging can be reconstructed, but also the atomic number and electron density information of the material can be simultaneously reconstructed, and the error caused by using the atomic number as a reference value when two different materials have the same atomic number can be effectively removed.

[0003] There are three implementation schemes of existing spectral CT, including dual-source dual-detector, fast voltage switching and double-layer image plate, and these schemes can realize material identification and effectively remove the hardening artifact of the image, but do not improve the image resolution and imaging dose. SUMMARY

[0004] In order to solve the above technical problems, the application provides a dual-source spectral CT high-resolution imaging device and method.

[0005] In order to achieve the above purpose, the technical scheme of the application is as follows:

[0006] On the one hand, the application discloses a dual-source spectral CT high-resolution imaging device, which is installed on a CT slip ring rotating support and comprises a high-energy imaging assembly and a low-energy imaging assembly, wherein the high-energy imaging assembly and the low-energy imaging assembly each comprise an X-ray emitting device for emitting X-rays, and an amorphous silicon detector and an amorphous selenium detector for collecting digital images.

[0007] The amorphous silicon detector and the amorphous selenium detector of the same assembly are arranged in a circumferential direction of the CT slip ring rotating support, and the amorphous silicon detector in the high-energy imaging assembly and the amorphous selenium detector in the low-energy imaging assembly are arranged adjacently, and the amorphous selenium detector in the high-energy imaging assembly and the amorphous silicon detector in the low-energy imaging assembly are arranged adjacently.

[0008] The application discloses a dual-source spectral CT high-resolution imaging device, which uses amorphous silicon detectors and amorphous selenium detectors, combines the amorphous silicon detectors and the amorphous selenium detectors into a larger detector, independently images and reconstructs three-dimensional data of the amorphous silicon detectors and the amorphous selenium detectors, the image space resolution of the amorphous selenium detector is higher, the image density resolution of the amorphous silicon detector is higher, and after the reconstruction, the two groups of images are fused, so that the fused images can maintain higher space resolution and better density resolution.

[0009] Based on the technical scheme, the following improvements can be made:

[0010] As a preferred scheme, a copper filter is arranged at the beam outlet of the X-ray emitting device of the high-energy imaging assembly, and an aluminum filter is arranged at the beam outlet of the X-ray emitting device of the low-energy imaging assembly.

[0011] By adopting the preferred scheme, the filters are used to improve the ray separation degree, filter out the rays with low energy, and improve the average energy of the rays.

[0012] As a preferred scheme, the distance from the focus of the X-ray emitting device to the center of the amorphous silicon detector and the center of the amorphous selenium detector is consistent in the high-energy imaging assembly and the low-energy imaging assembly.

[0013] By adopting the preferred scheme, the effectiveness of the beam is ensured.

[0014] As a preferred scheme, the amorphous silicon detector of the high-energy imaging assembly comprises, in sequence along the thickness direction, a gadolinium oxysulfide scintillator, a photoelectric conversion circuit and an A / D conversion circuit.

[0015] The amorphous silicon detector of the low-energy imaging assembly comprises, in sequence along the thickness direction, a cesium iodide scintillator, a photoelectric conversion circuit and an A / D conversion circuit.

[0016] By adopting the preferred scheme, the amorphous silicon detector is used for indirect digital X-ray imaging, the cesium iodide has a stronger ability to convert X-rays into visible light than the gadolinium oxysulfide, and therefore has a higher conversion efficiency but a higher cost; the gadolinium oxysulfide detector has a fast imaging rate and stable performance and has a lower cost. For the low-energy imaging assembly, a higher conversion efficiency is required, and therefore the cesium iodide scintillator is used; for the high-energy imaging assembly, the gadolinium oxysulfide scintillator is used, so that the responses of the high-energy imaging assembly and the low-energy imaging assembly are consistent.

[0017] As a preferred scheme, a grid is arranged on the amorphous silicon detector and the amorphous selenium detector in the high-energy imaging assembly and the low-energy imaging assembly, and the grid is used to remove scattered rays generated after the X-rays pass through the human body.

[0018] By adopting the preferred scheme, the imaging effect is improved.

[0019] As a preferred scheme, the amorphous silicon detector and the amorphous selenium detector in the high-energy imaging assembly and the low-energy imaging assembly are flat panel detectors.

[0020] With the above preferred scheme, the flat panel detector has the advantages of small volume, light weight, large imaging range and high spatial resolution, which is beneficial to reduce the manufacturing difficulty of the machine and improve the spatial resolution of the CT.

[0021] As a preferred scheme, the X-ray emitting device, the amorphous silicon detector and the amorphous selenium detector in the high-energy imaging assembly and the low-energy imaging assembly can slide along the circumference of the CT slip ring rotating support;

[0022] And the amorphous silicon detector and the amorphous selenium detector in the high-energy imaging assembly and the low-energy imaging assembly can be spliced into a large detector.

[0023] With the above preferred scheme, the imaging range is larger.

[0024] On the other hand, the application also discloses a dual-source spectral CT high-resolution imaging method, which uses any of the above dual-source spectral CT high-resolution imaging devices for imaging, and specifically includes the following steps:

[0025] S1: Determine the high-energy voltage parameter and the low-energy voltage parameter of the X-ray emitting device of the high-energy imaging assembly and the low-energy imaging assembly, and the X-ray emitting device emits beams, and the amorphous silicon detector and the amorphous selenium detector respectively collect digital images;

[0026] S2: Image fusion is performed on the digital images collected in S1 to obtain high-resolution high-energy and low-energy images (I1, I2);

[0027] S3: Determine the base material of the spectrum and obtain the projection value (B1, B2) of the base material under the selected voltage parameter;

[0028] S4: Calculate the three-dimensional distribution of the base material coefficients (b1, b2) according to the high-energy and low-energy images (I1, I2) obtained in S2;

[0029] S5: Calculate the spectral image of the object.

[0030] As a preferred scheme, in S2, the high-energy imaging assembly and the low-energy imaging assembly respectively obtain high-resolution high-energy and low-energy images (I1, I2) through an image domain fusion method;

[0031] The image domain fusion method includes the following steps:

[0032] T1: Reconstruct the digital images collected by the amorphous silicon detector and the amorphous selenium detector respectively to obtain reconstructed images;

[0033] T2: calculating gradient value of each pixel of two groups of reconstructed images;

[0034] T3: adding two groups of reconstructed images obtained by T1 by pixel weight, weight of pixel is determined by gradient value of image, pixel point with large gradient value increases weight of reconstructed image of amorphous selenium detector, otherwise, weight of reconstructed image of amorphous silicon detector is increased.

[0035] As a preferred scheme, in S2, high-energy imaging assembly and low-energy imaging assembly obtain high-resolution high-energy image (I1) and low-energy image (I2) by projection domain fusion method respectively.

[0036] Projection domain fusion method includes the following contents: using projection data of amorphous silicon detector and amorphous selenium detector respectively for iteration, calculating total deviation value of two iterations until total deviation is reduced to minimum, and obtaining final reconstruction result. BRIEF DESCRIPTION OF DRAWINGS

[0037] In order to more clearly illustrate the technical scheme of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments, and it should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope, and for those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0038] Figure 1 The structural schematic diagram of the dual-source spectral CT high-resolution imaging device provided by the embodiments of the present application is shown.

[0039] Figure 2 The structural block diagram of the high-energy imaging assembly provided by the embodiments of the present application is shown.

[0040] Figure 3 The structural block diagram of the low-energy imaging assembly provided by the embodiments of the present application is shown.

[0041] Figure 4 The structural schematic diagram of the amorphous silicon detector of the high-energy imaging assembly provided by the embodiments of the present application is shown.

[0042] Figure 5 The structural schematic diagram of the amorphous silicon detector of the low-energy imaging assembly provided by the embodiments of the present application is shown.

[0043] Figure 6 The flow chart of the dual-source spectral CT high-resolution imaging method provided by the embodiments of the present application is shown.

[0044] Figure 7 The flow chart of the image domain fusion method provided by the embodiments of the present application is shown.

[0045] Among them: 1- high-energy imaging component, 11- X-ray emission device, 12- amorphous silicon detector, 121- gadolinium oxysulfide scintillator, 122- photoelectric conversion circuit, 123- A / D conversion circuit, 13- amorphous selenium detector, 14- copper filter, 2- low-energy imaging component, 21- X-ray emission device, 22- amorphous silicon detector, 221- cesium iodide scintillator, 222- photoelectric conversion circuit, 223- A / D conversion circuit, 23- amorphous selenium detector, 24- aluminum filter, 3- CT slip ring rotating bracket, 4- filter grid. DETAILED DESCRIPTION

[0046] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0047] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0048] The use of ordinal numbers "first," "second," "third," etc. to describe common objects merely indicates that different instances of similar objects are involved and is not intended to imply that the objects so described must have a given order in time, space, ranking, or in any other manner.

[0049] In addition, the expression “including” an element is an “open” expression, which simply means that corresponding components exist and should not be interpreted as excluding additional components.

[0050] In order to achieve the purpose of the present invention, some embodiments of a dual-source energy spectrum CT high-resolution imaging device and method, such as Figure 1 As shown, the dual-source energy spectrum CT high-resolution imaging device is installed on a CT slip ring rotating bracket 3, including: a high-energy imaging component 1 and a low-energy imaging component 2. The high-energy imaging component 1 includes: an X-ray emitting device 11 for emitting X-rays and an amorphous silicon detector 12 and an amorphous selenium detector 13 for collecting digital images, while the low-energy imaging component 2 also includes: an X-ray emitting device 21 for emitting X-rays and an amorphous silicon detector 22 and an amorphous selenium detector 23 for collecting digital images.

[0051] The amorphous silicon detector 12 and the amorphous selenium detector 13 of the high-energy imaging assembly 1 are arranged in a circumferential manner along the CT slip ring rotating support 3, the amorphous silicon detector 22 and the amorphous selenium detector 23 of the low-energy imaging assembly 2 are arranged in a circumferential manner along the CT slip ring rotating support 3, and the amorphous silicon detector 12 in the high-energy imaging assembly 1 and the amorphous selenium detector 23 in the low-energy imaging assembly 2 are arranged adjacently, and the amorphous selenium detector 13 in the high-energy imaging assembly 1 and the amorphous silicon detector 22 in the low-energy imaging assembly 2 are arranged adjacently.

[0052] The quality of the detector image is usually measured by the modulation transfer function (MTF) and the quantum conversion efficiency (DQE). The higher the MTF and DQE values are, the better the spatial resolution and the density resolution of the image produced by the detector are. In the amorphous silicon detector 12, the photodiode array can be made as large as the area of the scintillator coating, so that the visible light can be projected onto the TFT without the need of lens refraction, and there is no loss of photons in the middle, so the DQE is relatively high.

[0053] The amorphous selenium semiconductor material is very sensitive to X-rays and has a high image resolution capability. When X-rays are incident, the amorphous selenium array directly converts the X-rays into an electrical signal and stores the electrical signal in a storage capacitor. The pulse control gate circuit makes the thin film transistor conductive, and the electrical charge stored in the storage capacitor is output through the charge amplifier, the conversion of the photoelectric signal is completed, and the digital image is formed through the digital converter. The amorphous selenium detector 13 directly converts the incident invisible X-ray photons into an electrical signal, so it has the optimal MTF value.

[0054] The DQE affects the resolution of the difference in tissue density, and the spatial resolution affects the resolution of the fine structure.

[0055] The amorphous silicon detector and the amorphous selenium detector are used in the dual-source spectral CT high-resolution imaging device, the amorphous silicon detector and the amorphous selenium detector are combined into a larger detector, the amorphous silicon detector and the amorphous selenium detector independently image and reconstruct three-dimensional data, the image spatial resolution of the amorphous selenium detector is higher, the image density resolution of the amorphous silicon detector is higher, and after the reconstruction is completed, the two groups of images are fused, and the fused image can maintain a higher spatial resolution and ensure a better density resolution.

[0056] In some embodiments, the X-ray emitting device is a ball tube, and a pulse fixed anode X-ray source is used, the focal point of which is smaller than that of a conventional clinical CT, which can ensure that the shadow of the rays is smaller, and the pulse beam output method can ensure that the dose is lower than that of a conventional CT.

[0057] And using two ball tubes has two advantages:

[0058] 1. The specific detector material can be selected according to the difference in ray energy;

[0059] 2. The tube voltage and current can be adjusted at will to obtain the maximum possible energy difference and approximate photon number, and the high voltage of the two ball tubes is generally set to 80KVp and 140KVp, because when the high voltage is lower than 80KVp, most of the photons are absorbed by the human body and cannot strike the detector, and when the high voltage is higher than 140KVp, a large number of remaining photons pass through the human body and directly strike the detector, resulting in poor contrast of soft tissue. This is the commonly used parameter, and the ball tube voltage adjustment range is 40KVp to 140KVp, and the high voltage can be any combination of values within this range.

[0060] As shown in Figures 2-3 In order to further optimize the implementation effect of the present application, in some other embodiments, the remaining features are the same, and the difference lies in that a copper filter 14 is arranged at the beam exit of the X-ray emitting device 11 of the high-energy imaging assembly 1, and an aluminum filter 24 is arranged at the beam exit of the X-ray emitting device 21 of the low-energy imaging assembly 2.

[0061] By using the above preferred scheme, the filter is used to improve the ray separation degree, and the rays with lower energy are filtered out to improve the average energy of the rays.

[0062] The basis of the spectral CT imaging system is that the X-ray emitting device or the detector can distinguish the energy of the rays, and in one scanning process, the information that two or more than two energy rays pass through the scanned object can be obtained. The same substance has different attenuation abilities for rays with different energies, and the degree of separation of the ray energy spectrum determines the imaging quality of the spectral CT system, so the filter is used to improve the ray separation degree. The filter is placed at the beam exit of the X-ray emitting device, and the rays generated by the X-ray emitting device are filtered and shaped, and the rays with lower energy are filtered out, so that the rays with corresponding energy are collected on the corresponding detector.

[0063] Generally, a metal material with a larger atomic number is selected to make the filter, and the larger the atomic number, the stronger the attenuation of the substance to the X-rays. At present, the filter materials used more are aluminum and copper, and compared with aluminum, copper has a larger relative atomic number and can remove higher energy rays, and the same thickness of copper has a better filtering effect than the same thickness of aluminum, so the copper filter 14 is selected and placed at the beam exit of the X-ray emitting device 11 of the high-energy imaging assembly 1, and the aluminum filter 24 is selected and placed at the beam exit of the X-ray emitting device 21 of the low-energy imaging assembly 2.

[0064] In order to further optimize the implementation effect of the present application, in some other embodiments, the remaining features are the same in technology, and the difference is that, in the high-energy imaging assembly 1, the distance from the focal point of the X-ray emitting device 11 to the center of the amorphous silicon detector 12 and the center of the amorphous selenium detector 13 is consistent; in the low-energy imaging assembly 2, the distance from the focal point of the X-ray emitting device 21 to the center of the amorphous silicon detector 22 and the center of the amorphous selenium detector 23 is consistent.

[0065] With the above preferred scheme, the effectiveness of the beam is ensured. In some embodiments, the included angle between the amorphous silicon detector 12 and the amorphous selenium detector 13 is 168°, and the included angle between the amorphous silicon detector 22 and the amorphous selenium detector 23 is 168°.

[0066] In order to further optimize the implementation effect of the present application, in some other embodiments, the remaining features are the same in technology, and the difference is that, as shown in Figure 4 The amorphous silicon detector 12 of the high-energy imaging assembly 1 includes, in order along its thickness direction, a gadolinium oxysulfide scintillator 121, a photoelectric conversion circuit 122, and an A / D conversion circuit 123.

[0067] As shown in Figure 5 The amorphous silicon detector 22 of the low-energy imaging assembly 2 includes, in order along its thickness direction, a cesium iodide scintillator 221, a photoelectric conversion circuit 222, and an A / D conversion circuit 223.

[0068] With the above preferred scheme, the amorphous silicon detector is indirect digital X-ray imaging, and the ability of cesium iodide to convert X-rays into visible light is stronger than that of gadolinium oxysulfide, so the conversion efficiency is higher, but the cost is relatively high; the gadolinium oxysulfide detector has a fast imaging rate and stable performance, and the cost is relatively low. For the low-energy imaging assembly 2, higher conversion efficiency is required, so the cesium iodide scintillator 221 is used, and for the high-energy imaging assembly 1, the gadolinium oxysulfide scintillator 121 is used, so that the responses of the high-energy imaging assembly 1 and the low-energy imaging assembly 2 remain consistent.

[0069] Generally, the amorphous silicon detector includes, in order along its thickness direction, a scintillator, a photoelectric conversion circuit, and an A / D conversion circuit. The scintillator on the surface of the amorphous silicon detector 12 converts X-rays into visible light, the photoelectric conversion circuit (or amorphous silicon photodiode array) under the scintillator converts the visible light into an electrical signal, and a storage charge is formed on the capacitor of the photodiode itself. The storage charge amount of each pixel is proportional to the incident X-ray intensity, the storage charges of each pixel are read out, and after A / D conversion, a digital signal is output, forming an X-ray digital image.

[0070] Furthermore, based on the above embodiment, in the high-energy imaging assembly 1 and the low-energy imaging assembly 2 , a grid 4 is installed on the amorphous silicon detector 12 and the amorphous selenium detector 13 respectively. The grid 4 is used to remove scattered X-rays generated after passing through the human body.

[0071] The above preferred solution is adopted to improve the imaging effect. The grid 4 is also called a rear collimator. In some embodiments, the thickness of the grid 4 is 3 mm.

[0072] In order to further optimize the implementation effect of the present invention, in some other embodiments, the remaining characteristic technologies are the same, except that the amorphous silicon detector 12 and the amorphous selenium detector 13 of the high-energy imaging component 1 and the amorphous silicon detector 22 and the amorphous selenium detector 23 of the low-energy imaging component 2 are all flat-panel detectors.

[0073] By adopting the above preferred solution, the flat panel detector has the advantages of small size, light weight, large imaging range and high spatial resolution, which is conducive to reducing the difficulty of mechanical manufacturing and improving the spatial resolution of CT.

[0074] In order to further optimize the implementation effect of the present invention, in other embodiments, the remaining characteristic technologies are the same, except that the X-ray emitting device 11, the amorphous silicon detector 12 and the amorphous selenium detector 13 in the high-energy imaging component 1 and the low-energy imaging component 2 can slide along the circumference of the CT slip ring rotating bracket 3;

[0075] Furthermore, the amorphous silicon detector 12 and the amorphous selenium detector 13 of the high-energy imaging component 1 and the amorphous silicon detector 22 and the amorphous selenium detector 23 of the low-energy imaging component 2 can be spliced ​​into a large detector.

[0076] By adopting the above preferred solution, the amorphous silicon detector 12 and the amorphous selenium detector 13 of the high-energy imaging component 1 and the amorphous silicon detector 22 and the amorphous selenium detector 23 of the low-energy imaging component 2 can be equivalent to a larger detector by sliding and splicing together, thereby obtaining an imaging range far exceeding that of ordinary CT.

[0077] In some embodiments, the X-ray emitting device can be rotated accordingly to ensure that the amorphous silicon detector and the amorphous selenium detector of the same component are within the range of the radiation.

[0078] The above multiple implementations can be implemented in parallel.

[0079] like Figure 6 As shown, in addition, an embodiment of the present invention further discloses a dual-source energy spectrum CT high-resolution imaging method, which uses the dual-source energy spectrum CT high-resolution imaging device disclosed in any of the above embodiments to perform imaging, specifically comprising the following steps:

[0080] S1: determine the high-energy voltage parameter and the low-energy voltage parameter of the X-ray emitting device of the high-energy imaging assembly and the low-energy imaging assembly, the X-ray emitting device emits, and the corresponding amorphous silicon detector and amorphous selenium detector respectively collect digital images;

[0081] S2: image fusion is performed on the digital images collected in S1 to obtain high-resolution high-energy and low-energy images (I1, I2);

[0082] S3: determine the base material of the energy spectrum and obtain the projection value (B1, B2) of the base material under the selected voltage parameter;

[0083] S4: according to the high-energy and low-energy images (I1, I2) obtained in S2, the three-dimensional distribution of the base material coefficients (b1, b2) is calculated;

[0084] S5: calculate the energy spectrum image of the object.

[0085] The energy spectrum image of the object can be but is not limited to the characteristic density image, the effective atomic number image, and the monochromatic energy spectrum image of the object.

[0086] It is worth noting that in some embodiments, the X-ray emitting device of the high-energy imaging assembly 1 and the X-ray emitting device of the low-energy imaging assembly use the same ray parameter for imaging, and the imaging efficiency can be doubled, and only half of the original time is needed to complete the single-energy CT reconstruction.

[0087] Further, in S2, the high-energy imaging assembly and the low-energy imaging assembly respectively obtain high-resolution high-energy and low-energy images (I1, I2) through an image domain fusion method;

[0088] As shown in the image domain fusion method, the following steps are included: Figure 7

[0089] T1: reconstruct the digital images collected by the amorphous silicon detector and the amorphous selenium detector respectively to obtain reconstructed images;

[0090] T2: calculate the gradient value of each pixel point of the two groups of reconstructed images;

[0091] T3: pixel weighted summation of the two groups of reconstructed images obtained in T1, the weight of the pixel is determined by the gradient value of the image, the pixel point with large gradient value increases the weight of the reconstructed image of the amorphous selenium detector, otherwise, the weight of the reconstructed image of the amorphous silicon detector is increased.

[0092] In other embodiments, in S2, the high-energy imaging assembly and the low-energy imaging assembly respectively obtain high-resolution high-energy and low-energy images (I1, I2) through a projection domain fusion method;

[0093] ​The projection domain fusion method comprises the following contents: using the projection data of the amorphous silicon detector and the amorphous selenium detector respectively for iteration, calculating total deviation values of two iterations until the total deviation is reduced to the minimum, and obtaining a final reconstruction result.

[0094] The above examples are only for illustrating the technical concept and characteristics of the present application, and the purpose is to enable those skilled in the art to understand the content of the present application and implement it, and cannot limit the protection scope of the present application. Any equivalent changes or modifications made according to the spirit and essence of the present application shall be covered within the protection scope of the present application.

Claims

1. A dual-source spectral CT high-resolution imaging device installed on a CT slip ring rotating support, characterized in that, The application relates to a dual-source energy spectrum CT high-resolution imaging device. The high-energy imaging assembly and the low-energy imaging assembly each comprise an X-ray emitting device, an amorphous silicon detector and an amorphous selenium detector for collecting digital images; The amorphous silicon detectors and the amorphous selenium detectors of the same assembly are arranged in a circumferential joint mode along the CT slip ring rotating support, and the amorphous silicon detectors in the high-energy imaging assembly and the amorphous selenium detectors in the low-energy imaging assembly are arranged adjacently, and the amorphous selenium detectors in the high-energy imaging assembly and the amorphous silicon detectors in the low-energy imaging assembly are arranged adjacently; The high-energy imaging assembly and the low-energy imaging assembly respectively obtain high-resolution high-low-energy images (I1, I2) through an image domain fusion method. The image domain fusion method comprises the following steps: T1: reconstructing the digital images collected by the amorphous silicon detectors and the amorphous selenium detectors respectively to obtain reconstructed images; T2: calculating the gradient values of each pixel point of the two groups of reconstructed images; T3: pixel-weighted summation of the two groups of reconstructed images obtained in T1, and the weight of the pixel is determined by the gradient value of the image; the pixel point with a large gradient value increases the weight of the reconstructed image of the amorphous selenium detector, otherwise, the weight of the reconstructed image of the amorphous silicon detector is increased; Or, The high-energy imaging assembly and the low-energy imaging assembly respectively obtain high-resolution high-low-energy images (I1, I2) through a projection domain fusion method. The projection domain fusion method comprises the following contents: respectively using the projection data of the amorphous silicon detector and the amorphous selenium detector to perform iteration, calculating the total deviation value of the two iterations until the total deviation is reduced to the minimum, and obtaining the final reconstruction result.

2. The dual-source spectral CT high-resolution imaging apparatus of claim 1, wherein, A copper filter is arranged at the beam outlet of the X-ray emitting device of the high-energy imaging assembly, and an aluminum filter is arranged at the beam outlet of the X-ray emitting device of the low-energy imaging assembly.

3. The dual-source spectral CT high-resolution imaging apparatus of claim 1, wherein, In the high-energy imaging assembly and the low-energy imaging assembly, the distance from the focus of the X-ray emitting device to the center of the amorphous silicon detector and the center of the amorphous selenium detector is consistent.

4. The dual-source spectral CT high-resolution imaging apparatus of claim 1, wherein, The amorphous silicon detector of the high-energy imaging assembly comprises, in sequence along the thickness direction, a gadolinium oxysulfide scintillator, a photoelectric conversion circuit and an A / D conversion circuit. The amorphous silicon detector of the low-energy imaging assembly comprises, in sequence along the thickness direction, a cesium iodide scintillator, a photoelectric conversion circuit and an A / D conversion circuit.

5. The dual-source spectral CT high-resolution imaging apparatus of claim 1, wherein, In the high-energy imaging assembly and the low-energy imaging assembly, a grid is respectively arranged on the amorphous silicon detector and the amorphous selenium detector, and the grid is used for removing scattered rays generated after the X-rays pass through the human body.

6. The dual-source spectral CT high-resolution imaging apparatus of any one of claims 1-5, wherein, In the high-energy imaging assembly and the low-energy imaging assembly, the amorphous silicon detector and the amorphous selenium detector are both flat panel detectors.

7. The dual-source spectral CT high-resolution imaging apparatus of any one of claims 1-5, wherein, The X-ray emitting device, the amorphous silicon detector and the amorphous selenium detector in the high-energy imaging assembly and the low-energy imaging assembly can slide along the circumference of the CT slip ring rotating support. The amorphous silicon detector and the amorphous selenium detector in the high-energy imaging assembly and the low-energy imaging assembly can be jointed into a large detector.

8. A dual-source spectral CT high-resolution imaging method, characterized in that, The dual-source energy spectrum CT high-resolution imaging device is used for imaging, and the imaging specifically comprises the following steps: S1: determining high-energy voltage parameters and low-energy voltage parameters of X-ray emitting devices of high-energy imaging components and low-energy imaging components, the X-ray emitting devices emitting, corresponding amorphous silicon detectors and amorphous selenium detectors respectively collecting digital images; S2: performing image fusion on the digital images collected in S1 to obtain high-resolution high-energy and low-energy images (I1, I2); S3: determining a base material of a spectrum and obtaining projection values (B1, B2) of the base material under selected voltage parameters; S4: calculating, according to the high-energy and low-energy images (I1, I2) obtained in S2, three-dimensional distributions of base material coefficients (b1, b2); S5: calculating a spectrum image of an object.

Images