Optical sensing device

Abstract

The present invention discloses an optical sensing device, comprising: a substrate, a plurality of sensing elements, a flat layer and a light shielding layer. The plurality of sensing elements are located on the substrate, and each sensing element comprises a first mesh electrode, a second mesh electrode and a sensing layer, wherein the first mesh electrode is located between the sensing layer and the substrate, and the sensing layer is located between the first mesh electrode and the second mesh electrode. The flat layer is located on the sensing element and the substrate, and has a plurality of through holes. The light shielding layer is located on the flat layer, and comprises a plurality of mesh light shielding patterns, wherein the plurality of mesh light shielding patterns respectively overlap the second mesh electrodes of the plurality of sensing elements, and the plurality of mesh light shielding patterns are respectively electrically connected to the second mesh electrodes of the plurality of sensing elements through a plurality of through holes.

Description

Technical Field

[0001] The present invention relates to a sensing device, and in particular to an optical sensing device. Background Art

[0002] In order to build a smart living environment, sensing technology has been widely used in various electronic devices. For example, mobile phones and electronic locks use fingerprint sensors to protect personal data security and access control. In terms of actual application requirements, fingerprint sensors need to be equipped with light collimation design, for example, using a light shielding layer to limit the light receiving angle of the sensing element, and using organic materials to stack sufficient thickness to facilitate microlens focusing and light collimation, in order to obtain a clearer fingerprint image.

[0003] However, since the light shielding layer including metal material almost covers the entire sensing device, parasitic capacitance or stray capacitance is easily generated between the light shielding layer and other conductive layers in the device, resulting in reduced sensing sensitivity of the sensing element. Summary of the invention

[0004] The invention provides an optical sensing device with improved sensing sensitivity.

[0005] One embodiment of the present invention proposes an optical sensing device, comprising: a substrate; a plurality of sensing elements, located on the substrate, and each sensing element comprises a first mesh electrode, a second mesh electrode and a sensing layer, wherein the first mesh electrode is located between the sensing layer and the substrate, and the sensing layer is located between the first mesh electrode and the second mesh electrode; a flat layer, located on the sensing element and the substrate, and having a plurality of through holes; and a light shielding layer, located on the flat layer, and comprising a plurality of mesh light shielding patterns, wherein the plurality of mesh light shielding patterns respectively overlap the second mesh electrodes of the plurality of sensing elements, and the plurality of mesh light shielding patterns are respectively electrically connected to the second mesh electrodes of the plurality of sensing elements through a plurality of through holes.

[0006] In one embodiment of the present invention, the mesh light shielding pattern partially overlaps the first mesh electrode.

[0007] In one embodiment of the present invention, the sensing layer includes a plurality of separated sensing patterns, each mesh-shaped light-shielding pattern has a plurality of openings, and the plurality of openings overlap the plurality of sensing patterns respectively.

[0008] In an embodiment of the present invention, the spacings between the plurality of sensing patterns are the same.

[0009] In one embodiment of the present invention, the sensing pattern is in a polygonal or circular shape.

[0010] In one embodiment of the present invention, the first mesh electrode includes a first sensing electrode portion and a first bridging portion connected to each other, the first sensing electrode portion overlaps the sensing layer, and the first bridging portion does not overlap the sensing layer.

[0011] In one embodiment of the present invention, the second mesh electrode includes a second sensing electrode portion and a second bridging portion connected to each other, the second sensing electrode portion overlaps the sensing layer, and the second bridging portion does not overlap the sensing layer.

[0012] In one embodiment of the present invention, the second bridging portion does not overlap the first bridging portion.

[0013] In an embodiment of the present invention, the light shielding layer further includes a plurality of conductive line patterns respectively located between the plurality of mesh light shielding patterns and separated from the plurality of mesh light shielding patterns.

[0014] In one embodiment of the present invention, the plurality of conductive line patterns are respectively electrically connected to a system voltage or a sensing signal generated by an output sensing element.

[0015] Another embodiment of the present invention proposes an optical sensing device, comprising: a substrate; a plurality of sensing elements located on the substrate and used to generate sensing signals; a planar layer located on the sensing elements and the substrate; and a light shielding layer located on the planar layer and comprising a plurality of separated light shielding patterns and a plurality of wire patterns, wherein the plurality of light shielding patterns respectively overlap the plurality of sensing elements, and the plurality of wire patterns are respectively electrically connected to a system voltage or an output sensing signal.

[0016] In an embodiment of the present invention, the light shielding pattern has a mesh-shaped outline.

[0017] In one embodiment of the present invention, the sensing element comprises a first mesh electrode, a second mesh electrode and a plurality of sensing patterns, and the plurality of sensing patterns are located between the first mesh electrode and the second mesh electrode.

[0018] In one embodiment of the present invention, the light shielding pattern is electrically connected to the second mesh electrode through a through hole of the planar layer.

[0019] In one embodiment of the present invention, the light shielding pattern partially overlaps the first mesh electrode.

[0020] In one embodiment of the present invention, the second mesh electrode partially overlaps the first mesh electrode.

[0021] In an embodiment of the present invention, the light shielding pattern has a plurality of openings, and the plurality of openings overlap a plurality of sensing patterns respectively.

[0022] In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below with reference to the accompanying drawings for detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1A is a partial top view of an optical sensing device 10 according to an embodiment of the present invention;

[0024] Figure 1B is along Figure 1A A schematic cross-sectional view taken along the section line A-A';

[0025] Figure 1C is a circuit diagram of an optical sensing device 10 according to an embodiment of the present invention;

[0026] Figure 2A is a partial top view of an optical sensing device 20 according to an embodiment of the present invention;

[0027] Figure 2B is along Figure 2A A schematic cross-sectional view taken along the section line BB';

[0028] Figure 3A is a partial top view of an optical sensing device 30 according to an embodiment of the present invention;

[0029] Figure 3B is along Figure 3A A schematic cross-sectional view taken along the section line C-C';

[0030] Figure 4A is a partial top view of an optical sensing device 40 according to an embodiment of the present invention;

[0031] Figure 4B is along Figure 4A A schematic cross-sectional diagram taken along section line D-D'.

[0032] Explanation of symbols

[0033] 10, 20, 30, 40: Optical sensing device

[0034] 110: Substrate

[0035] 120: Sensing element

[0036] 130, 140: Light shielding layer

[0037] A-A', B-B', C-C', D-D': hatching

[0038] BE1: First bridge

[0039] BE2: Second bridge

[0040] CH1, CH2: Semiconductor pattern

[0041] CL1, CL2, CL3: Conductor pattern

[0042] CP1, CP2, CP3: Connection pattern

[0043] D1: Spacing

[0044] GE1, GE2: Gate

[0045] ML: Microlens structure

[0046] NE1: First mesh electrode

[0047] NE2: Second mesh electrode

[0048] NS: Net-Shading Pattern

[0049] OP1, OP2: Opening

[0050] P: Node

[0051] P1, P2, P3, P4: End

[0052] PL, PL1, PL2, PL3: Flat layer

[0053] RL: Signal line

[0054] SE1: First sensing electrode part

[0055] SE2: Second sensing electrode part

[0056] SL: Sensing layer

[0057] Sout: sensing signal

[0058] SR: Sensing Pattern

[0059] SR_R, SR_W: drive signal

[0060] T1, T2: transistors

[0061] T1a, T2a: First end

[0062] T1b, T2b: Second end

[0063] T1c, T2c: Control terminal

[0064] TP1, TP2, TP3: Transfer pattern

[0065] V1, V2, V3, V4: Through hole

[0066] VDD, VSS: system voltage

[0067] VL1, VL2: signal lines DETAILED DESCRIPTION

[0068] In the accompanying drawings, for the sake of clarity, the thickness of layers, films, panels, regions, etc. is magnified. Throughout the specification, the same reference numerals represent the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it may be directly on or connected to another element, or an intermediate element may also exist. On the contrary, when an element is referred to as being "directly on" or "directly connected to" another element, there is no intermediate element. As used herein, "connection" may refer to physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" may be the presence of other elements between two elements.

[0069] It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or portions, these elements, components, regions, layers and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or portion from another element, component, region, layer or portion. Therefore, the first "element", "component", "region", "layer" or "portion" discussed below may be referred to as a second element, component, region, layer or portion without departing from the teachings of this document.

[0070] The terms used herein are for the purpose of describing specific embodiments only and are not intended to be limiting. As used herein, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include the plural forms, including "at least one" or to mean "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items. It should also be understood that when used in this specification, the terms "include" and / or "include" specify the presence of the features, regions, wholes, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, parts and / or combinations thereof.

[0071] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element, as shown in the figures. It should be understood that relative terms are intended to include different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one figure is turned over, the elements described as being on the "lower" side of the other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" can include both "lower" and "upper" orientations, depending on the particular orientation of the figure. Similarly, if the device in one figure is turned over, the elements described as being "lower" or "below" other elements will be oriented as being "above" the other elements. Therefore, the exemplary terms "lower" or "below" can include both above and below orientations.

[0072] Exemplary embodiments are described herein with reference to cross-sectional views that are schematic diagrams of idealized embodiments. Therefore, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and / or tolerances, can be expected. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions as shown herein, but rather include shape deviations that result, for example, from manufacturing. For example, a region shown or described as flat may typically have rough and / or nonlinear features. In addition, the sharp angles shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shape of the regions and are not intended to limit the scope of the claims.

[0073] Figure 1A FIG. 1 is a partial top view of an optical sensing device 10 according to an embodiment of the present invention. Figure 1B is along Figure 1A A schematic cross-sectional view taken along the section line AA'. Figure 1C FIG. 1 is a circuit diagram of an optical sensing device 10 according to an embodiment of the present invention. Figure 1A Omit Figure 1B The planar layers PL1, PL2, PL3, the light shielding layer 140 and the microlens structure ML are Figure 1B The film layer between the substrate 110 and the sensing element 120 is omitted.

[0074] First, please also refer to Figure 1A to Figure 1B The optical sensing device 10 includes: a substrate 110; a plurality of sensing elements 120, which are located on the substrate 110, and each sensing element 120 includes a first mesh electrode NE1, a second mesh electrode NE2 and a sensing layer SL, wherein the first mesh electrode NE1 is located between the sensing layer SL and the substrate 110, and the sensing layer SL is located between the first mesh electrode NE1 and the second mesh electrode NE2; a planar layer PL, which is located on the sensing element 120 and the substrate 110 and has a plurality of through holes V1; and a light shielding layer 130, which is located on the planar layer PL and includes a plurality of mesh light shielding patterns NS, wherein the plurality of mesh light shielding patterns NS respectively overlap the second mesh electrodes NE2 of the plurality of sensing elements 120, and the plurality of mesh light shielding patterns NS are respectively electrically connected to the second mesh electrodes NE2 of the plurality of sensing elements 120 through the plurality of through holes V1.

[0075] In the optical sensing device 10 according to an embodiment of the present invention, the second mesh electrode NE2 of the sensing element 120 is electrically connected via the mesh light shielding pattern NS, thereby eliminating the parasitic capacitance between the mesh light shielding pattern NS and the second mesh electrode NE2 , thereby improving the sensing sensitivity of the optical sensing device 10 .

[0076] The following, with Figures 1A to 1C, the implementation of each element of the optical sensing device 10 is further described, but the present invention is not limited thereto.

[0077] In the present embodiment, the substrate 110 of the optical sensing device 10 may be a transparent substrate or an opaque substrate, and its material may be a ceramic substrate, a quartz substrate, a glass substrate, a polymer substrate or other suitable materials, but is not limited thereto. Various film layers for forming the sensing element 120, the light shielding layer 130, the flat layer PL, the transistor, the signal line, the storage capacitor, etc. may be disposed on the substrate 110.

[0078] The plurality of sensing elements 120 of the optical sensing device 10 may be arranged in an array on the substrate 110, and Figure 1A Only one of the sensing elements 120 is shown. The first mesh electrode NE1 of each sensing element 120 may include a plurality of first sensing electrode portions SE1 and a plurality of first bridge portions BE1, and the first sensing electrode portion SE1 may have a polygonal or circular outline. For example, in the present embodiment, the first mesh electrode NE1 may include eight first sensing electrode portions SE1 and ten first bridge portions BE1, but the number of the first sensing electrode portions SE1 and the first bridge portions BE1 is not limited thereto. The first sensing electrode portion SE1 may have an approximately octagonal outline, and the two sides of the rectangular block-shaped first bridge portion BE1 are respectively connected to one side of two adjacent first sensing electrode portions SE1, so that the first sensing electrode portions SE1 can be connected to each other through the first bridge portion BE1, but the shapes of the first sensing electrode portions SE1 and the first bridge portion BE1 are not limited thereto. The material of the first mesh electrode NE1 may be molybdenum, aluminum, titanium, copper, gold, silver or other conductive materials, or an alloy of two or more of the above materials, or a combination of two or more of the above materials.

[0079] In this embodiment, the sensing layer SL of each sensing element 120 may include a plurality of separate sensing patterns SR, for example Figure 1A The eight sensing patterns SR shown in the figure are not limited thereto. In some embodiments, the plurality of sensing patterns SR of the sensing layer SL may be connected to each other. In some embodiments, the number of sensing patterns SR may be more or less. In some embodiments, the spacing D1 between the sensing patterns SR may be the same. In some embodiments, the spacing D1 between the sensing patterns SR may be different. In some embodiments, the number of sensing patterns SR may be the same as or different from the number of first sensing electrode portions SE1.

[0080] In some embodiments, each sensing pattern SR may overlap a first sensing electrode portion SE1 of the first mesh electrode NE1, but does not overlap the first bridge portion BE1 of the first mesh electrode NE1. In other words, the orthographic projection of the sensing pattern SR on the substrate 110 may overlap the orthographic projection of the first sensing electrode portion SE1 on the substrate 110, but the orthographic projection of the sensing pattern SR on the substrate 110 may be outside the orthographic projection of the first bridge portion BE1 on the substrate 110. In some embodiments, the shape of the sensing pattern SR may be a polygon or a circle, but is not limited thereto. In some embodiments, the shape of the sensing pattern SR may be the same as that of the first sensing electrode portion SE1. The material of the sensing layer SL may be silicon-rich oxide (SRO), germanium-doped silicon-rich oxide, or other suitable materials.

[0081] The second mesh electrode NE2 of each sensing element 120 may include a second sensing electrode portion SE2 and a second bridge portion BE2, wherein the second sensing electrode portion SE2 overlaps the sensing pattern SR and the first sensing electrode portion SE1, and the second bridge portion BE2 does not overlap the sensing pattern SR. For example, the second sensing electrode portion SE2 may have an approximately octagonal shape, the second bridge portion BE2 may have an X-shape, and the four ends P1, P2, P3, and P4 of the second bridge portion BE2 may respectively connect one side of four adjacent second sensing electrode portions SE2, so that Figure 1A The eight second sensing electrode portions SE2 shown can be connected to each other through three second bridge portions BE2, but the shapes and numbers of the second sensing electrode portions SE2 and the second bridge portions BE2 are not limited thereto. In some embodiments, the second sensing electrode portions SE2 and the second bridge portions BE2 can have other shapes and / or numbers.

[0082] In this embodiment, the second bridge portion BE2 does not overlap the first bridge portion BE1 to avoid the generation of parasitic capacitance between the first mesh electrode NE1 and the second mesh electrode NE2. The material of the second mesh electrode NE2 is preferably a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide or other suitable oxides or a stacked layer of at least two of the above.

[0083] The planar layer PL is located between the light shielding layer 130 and the sensing element 120, and the mesh light shielding pattern NS of the light shielding layer 130 can be electrically connected to the second mesh electrode NE2 through the through hole V1 in the planar layer PL, so that the mesh light shielding pattern NS and the second mesh electrode NE2 have the same potential. In this way, it is possible to avoid the formation of parasitic capacitance between the mesh light shielding pattern NS and the second mesh electrode NE2.

[0084] In some embodiments, the mesh light-shielding pattern NS may substantially completely overlap the second mesh electrode NE2. In other words, the outline or shape of the mesh light-shielding pattern NS may be substantially the same as that of the second mesh electrode NE2. In this way, the mesh light-shielding pattern NS may overlap the first sensing electrode portion SE1 of the first mesh electrode NE1, but not the first bridge portion BE1. In this way, the parasitic capacitance formed between the mesh light-shielding pattern NS and the first bridge portion BE1 may also be reduced.

[0085] The mesh shading pattern NS may also have a plurality of openings OP1, and the openings OP1 overlap the sensing pattern SR respectively to control the light collection range of the sensing pattern SR. In some embodiments, the optical sensing device 10 may further include a flat layer PL2 and a light shielding layer 140, and the flat layer PL2 is sandwiched between the light shielding layer 140 and the light shielding layer 130. The light shielding layer 140 may have a plurality of openings OP2, and the openings OP2 overlap the openings OP1 respectively. In some embodiments, the optical sensing device 10 may further include a flat layer PL3 and a microlens structure ML, wherein the flat layer PL3 is sandwiched between the microlens structure ML and the light shielding layer 140, and the microlens structure ML overlaps the openings OP1 and OP2. In this way, the microlens structure ML can be combined with the openings OP1 and OP2 to adjust the light collection angle of the sensing pattern SR, thereby realizing a light collimation design.

[0086] In this embodiment, the optical sensing device 10 may further include a planar layer PL1, and the planar layer PL1 is located between the planar layer PL and the substrate 110. The material of the planar layers PL, PL1, PL2, and PL3 may include an organic material, such as an acrylic material, a siloxane material, a polyimide material, an epoxy material, or a stack of the above materials, but is not limited thereto.

[0087] Please also refer to Figure 1A and Figure 1CIn this embodiment, the optical sensing device 10 may further include transistors T1, T2, and signal lines VL1, VL2, and RL, wherein the signal lines VL1, VL2, and RL may belong to the same film layer as the first mesh electrode NE1 of the sensing element 120, and the signal lines VL1 and VL2 may be electrically connected to the system voltage VSS and the system voltage VDD, respectively. The node P is coupled between the first mesh electrode NE1 of the sensing element 120, the second end T1b of the transistor T1, and the control end T2c of the transistor T2. The gate GE1 may constitute the control end T1c of the transistor T1, and the semiconductor pattern CH1 may constitute the channel of the transistor T1. The gate GE2 may constitute the control end T2c of the transistor T2, and the semiconductor pattern CH2 may constitute the channel of the transistor T2. The first end T1a of the transistor T1 may receive the system voltage VSS from the signal line VL1, and the control end T1c of the transistor T1 may receive the driving signal SR_R, so that the node P returns to the system voltage VSS level. The sensing element 120 is used to perform a sensing operation to generate a sensing signal Sout. The first terminal T2a of the transistor T2 can receive a system voltage VDD from the signal line VL2. When the sensing element 120 performs sensing, the sensing element 120 begins to leak and the voltage level of the node P decreases. At this time, the driving signal SR_W applied to the second mesh electrode NE2 can raise the voltage level of the node P through the capacitive effect of the sensing element 120, thereby turning on the transistor T2, so that the sensing signal Sout can be read via the signal line RL.

[0088] Below, use FIG. 2A to FIG. 4B Continue to describe other embodiments of the present invention, and continue to use Figures 1A to 1C The component numbers and related contents of the embodiments are the same, wherein the same number is used to represent the same or similar components, and the description of the same technical contents is omitted. For the description of the omitted parts, please refer to Figures 1A to 1C The embodiments of the present invention will not be described in detail in the following description.

[0089] Figure 2A FIG. 2 is a partial top view of an optical sensing device 20 according to an embodiment of the present invention. Figure 2B is along Figure 2A In order to make the expression of the accompanying drawings more concise, Figure 2B The film layer between the substrate 110 and the connection pattern CP1 is omitted.

[0090] Please also refer to FIG. 2A to FIG. 2B , the optical sensing device 20 includes a substrate 110, a plurality of sensing elements 120, a planar layer PL, and a light shielding layer 130. Figures 1A to 1C Compared with the optical sensing device 10 shown in FIG. FIG. 2A to FIG. 2BThe difference of the optical sensing device 20 shown is that the light shielding layer 130 of the optical sensing device 20 includes a mesh light shielding pattern NS and a conductive line pattern CL1 , and the conductive line pattern CL1 can replace the signal line VL1 of the optical sensing device 10 .

[0091] In the present embodiment, the conductor pattern CL1 is separated from the mesh shading pattern NS and belongs to the same film layer, and the conductor pattern CL1 can be located between the mesh shading patterns NS on adjacent photosensitive elements 120. The conductor pattern CL1 can be electrically connected to the system voltage VSS, and the conductor pattern CL1 can also be electrically connected to the connection pattern CP1 through the through hole V2 in the flat layer PL and the transfer pattern TP1, and the connection pattern CP1 can, for example, constitute the first end T1a of the transistor T1. In some embodiments, the transfer pattern TP1 can belong to the same film layer as the second mesh electrode NE2, and the connection pattern CP1 can belong to the same film layer as the first mesh electrode NE1. Since the parasitic capacitance between the conductor pattern CL1 and the first mesh electrode NE1 is smaller than the parasitic capacitance between the signal line VL1 and the first mesh electrode NE1, the stray capacitance between the photosensitive element 120 and the surrounding wires can be reduced, thereby improving the sensing sensitivity of the optical sensing device 20.

[0092] Figure 3A FIG. 4 is a partial top view of an optical sensing device 30 according to an embodiment of the present invention. Figure 3B is along Figure 3A In order to make the expression of the attached figure more concise, Figure 3B The film layer between the substrate 110 and the connection pattern CP2 is omitted.

[0093] Please also refer to FIG. 3A to FIG. 3B The optical sensing device 30 includes a substrate 110, a plurality of sensing elements 120, a planar layer PL, and a light shielding layer 130. Figures 1A to 1C Compared with the optical sensing device 10 shown in FIG. FIG. 3A to FIG. 3B The difference of the optical sensing device 30 shown is that the light shielding layer 130 of the optical sensing device 30 includes a mesh light shielding pattern NS and a conductive line pattern CL2 , and the conductive line pattern CL2 can replace the signal line VL2 of the optical sensing device 10 .

[0094] In the present embodiment, the conductor pattern CL2 is separated from the mesh shading pattern NS and belongs to the same film layer, and the conductor pattern CL2 can be located between the mesh shading patterns NS on adjacent photosensitive elements 120. The conductor pattern CL2 can be electrically connected to the system voltage VDD, and the conductor pattern CL2 can also be electrically connected to the connection pattern CP2 through the through hole V3 in the flat layer PL and the transfer pattern TP2, and the connection pattern CP2 can, for example, constitute the first end T2a of the transistor T2. In some embodiments, the transfer pattern TP2 can belong to the same film layer as the second mesh electrode NE2, and the connection pattern CP2 can belong to the same film layer as the first mesh electrode NE1. Since the parasitic capacitance between the conductor pattern CL2 and the first mesh electrode NE1 is smaller than the parasitic capacitance between the signal line VL2 and the first mesh electrode NE1, the stray capacitance between the photosensitive element 120 and the surrounding wires can be reduced, thereby improving the sensing sensitivity of the optical sensing device 30.

[0095] Figure 4A FIG. 4 is a partial top view of an optical sensing device 40 according to an embodiment of the present invention. Figure 4B is along Figure 4A In order to make the expression of the attached figure more concise, Figure 4B The film layer between the substrate 110 and the connection pattern CP3 is omitted.

[0096] Please also refer to FIG. 4A to FIG. 4B , the optical sensing device 40 includes a substrate 110, a plurality of sensing elements 120, a planar layer PL and a light shielding layer 130. Figures 1A to 1C Compared with the optical sensing device 10 shown in FIG. FIG. 4A to FIG. 4B The difference of the optical sensing device 40 shown is that the light shielding layer 130 of the optical sensing device 40 includes a mesh light shielding pattern NS and a conductive line pattern CL3 , and the conductive line pattern CL3 can replace the signal line RL of the optical sensing device 10 .

[0097] In the present embodiment, the conductor pattern CL3 is separated from the mesh shading pattern NS and belongs to the same film layer, and the conductor pattern CL3 can be located between the mesh shading patterns NS on adjacent photosensitive elements 120. The conductor pattern CL3 can be electrically connected to the connection pattern CP3 through the through hole V4 in the flat layer PL and the transfer pattern TP3, and the connection pattern CP3 can constitute the second end T2b of the transistor T2, so that the conductor pattern CL3 can be used to output the sensing signal Sout of the photosensitive element 120. In some embodiments, the transfer pattern TP3 can belong to the same film layer as the second mesh electrode NE2, and the connection pattern CP3 can belong to the same film layer as the first mesh electrode NE1. Since the parasitic capacitance between the conductor pattern CL3 and the first mesh electrode NE1 is smaller than the parasitic capacitance between the signal line RL and the first mesh electrode NE1, the stray capacitance between the photosensitive element 120 and the surrounding wires can be reduced, thereby improving the sensing sensitivity of the optical sensing device 40.

[0098] In summary, the optical sensing device of the present invention can eliminate the parasitic capacitance between the mesh shading pattern and the second mesh electrode by electrically connecting the mesh shading pattern to the second mesh electrode of the sensing element. In addition, the second bridging portion of the second mesh electrode of the sensing element in the optical sensing device of the present invention does not overlap the first bridging portion of the first mesh electrode, thereby reducing the parasitic capacitance between the first mesh electrode and the second mesh electrode. In addition, the optical sensing device of the present invention can also arrange a conductor pattern such as one electrically connected to the system voltage or used to output a sensing signal in the shading layer, thereby reducing the stray capacitance between the sensing element and the surrounding wires. By reducing the parasitic capacitance and stray capacitance between the sensing element and the shading layer and / or the surrounding wires, the sensing sensitivity of the optical sensing device can be improved.

[0099] Although the present invention is disclosed in conjunction with the above embodiments, they are not intended to limit the present invention. Any ordinary technician in the technical field may make slight changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the definition of the attached claims.

Claims

1. An optical sensing device, comprising: substrate; A plurality of sensing elements are located on the substrate, and each of the sensing elements comprises a first mesh electrode, a second mesh electrode and a sensing layer, wherein the first mesh electrode is located between the sensing layer and the substrate, and the sensing layer is located between the first mesh electrode and the second mesh electrode; a planar layer, located on the sensing element and the substrate, and having a plurality of through holes; and The light shielding layer is located on the flat layer and includes a plurality of mesh light shielding patterns. The plurality of mesh light-shielding patterns overlap the second mesh electrodes of the plurality of sensing elements respectively, and the plurality of mesh light-shielding patterns are electrically connected to the second mesh electrodes of the plurality of sensing elements through the plurality of through holes respectively. 2 . The optical sensing device as claimed in claim 1 , wherein the mesh light shielding pattern partially overlaps the first mesh electrode. 3 . The optical sensing device as claimed in claim 1 , wherein the sensing layer comprises a plurality of separated sensing patterns, each of the mesh light-shielding patterns has a plurality of openings, and the plurality of openings overlap the plurality of sensing patterns respectively. The optical sensing device as claimed in claim 3 , wherein the spacings between the plurality of sensing patterns are the same. The optical sensing device as claimed in claim 3 , wherein the sensing pattern is in a polygonal or circular shape. 6 . The optical sensing device as claimed in claim 1 , wherein the first mesh electrode comprises a first sensing electrode portion and a first bridging portion connected to each other, the first sensing electrode portion overlaps the sensing layer, and the first bridging portion does not overlap the sensing layer. 7 . The optical sensing device as claimed in claim 6 , wherein the second mesh electrode comprises a second sensing electrode portion and a second bridging portion connected to each other, the second sensing electrode portion overlaps the sensing layer, and the second bridging portion does not overlap the sensing layer. The optical sensing device as claimed in claim 7 , wherein the second bridging portion does not overlap the first bridging portion. 9 . The optical sensing device as claimed in claim 1 , wherein the light shielding layer further comprises a plurality of conductive line patterns respectively located between the plurality of mesh light shielding patterns and separated from the plurality of mesh light shielding patterns. 10 . The optical sensing device as claimed in claim 9 , wherein the plurality of conductive line patterns are respectively electrically connected to a system voltage or output a sensing signal generated by the sensing element.

11. An optical sensing device, comprising: substrate; A plurality of sensing elements, located on the substrate, for generating sensing signals, wherein the sensing elements include a first mesh electrode, a second mesh electrode, and a plurality of sensing patterns, and the plurality of sensing patterns are located between the first mesh electrode and the second mesh electrode; A planar layer, located on the sensing element and the substrate; as well as a light shielding layer, located on the flat layer, and comprising a plurality of separated light shielding patterns and a plurality of conductive line patterns, The plurality of light shielding patterns overlap the plurality of sensing elements respectively, and the plurality of conductive line patterns are electrically connected to a system voltage or output the sensing signal respectively. 12 . The optical sensing device as claimed in claim 11 , wherein the light shielding pattern has a mesh-shaped outline. 13 . The optical sensing device as claimed in claim 11 , wherein the light shielding pattern is electrically connected to the second mesh electrode through a through hole of the planar layer. The optical sensing device as claimed in claim 11 , wherein the light shielding pattern partially overlaps the first mesh electrode. The optical sensing device as claimed in claim 11 , wherein the second mesh electrode partially overlaps the first mesh electrode. 16 . The optical sensing device as claimed in claim 11 , wherein the light shielding pattern has a plurality of openings, and the plurality of openings overlap the plurality of sensing patterns respectively. The optical sensing device as claimed in claim 11 , wherein the sensing pattern is in a polygonal or circular shape.

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