Micro light emitting diode display chip and preparation method thereof

Abstract

The embodiments of this specification provide a micro-light-emitting diode display chip and a method for preparing the same. The micro-light-emitting diode display chip includes: a first substrate including a driving circuit and a plurality of first contacts electrically connected to the driving circuit; an LED semiconductor layer including a first doped semiconductor layer, an active layer, and a second doped semiconductor layer stacked in layers, the LED semiconductor layer being divided into a plurality of LED units; a plurality of insulating members disposed on the first substrate, corresponding to the first contacts and having openings exposing the first contacts; a bonding layer located between the first substrate and the LED semiconductor layer, including a bonding body electrically connected to the first doped semiconductor layer and a bonding pad located in the opening, the insulating member insulating the bonding pad from the bonding body, and the second doped semiconductor layer of the LED unit being electrically connected to the first contact via the bonding pad. By arranging the insulating member and the bonding pad in the opening, the bonding pad and the bonding body, and the first contact and the bonding body, are insulated, thereby reducing the risk of short circuits.

Description

Technical Field

[0001] This specification relates to the field of display technology, and in particular to a micro light emitting diode display chip and a method for preparing the same. Background Art

[0002] Light-emitting diodes (LEDs), as luminous devices, are widely used in lighting, display, and other fields. With the development of technology, micro-LEDs have garnered widespread attention. Micro-LEDs make traditional LED structures thinner, smaller, and more array-based. These light-emitting devices offer advantages such as high brightness, high pixel density, low power consumption, and long lifespan.

[0003] A microLED display features an array of tiny LEDs that form individual pixel elements. A pixel is a tiny illuminated area on a display screen, and many pixels can make up an image. In other words, a pixel is a small, discrete element that together form the image on a display. Pixels are typically arranged in a two-dimensional (2D) matrix and represented using dots, squares, rectangles, or other shapes. A pixel is the basic unit of a display or digital image and has geometric coordinates.

[0004] The conventional production process for Micro-LED displays involves first forming individual Micro-LED devices or arrays, then transferring the Micro-LED devices or arrays in batches onto a circuit substrate (e.g., a TFT board or CMOS board), and finally packaging them. However, due to the small size of Micro-LEDs and the high precision required for positioning, efficiently and with high yields, transferring Micro-LED chips in batches onto the circuit substrate has become a technical bottleneck that urgently needs to be overcome in the application of Micro-LEDs in micro-display technology. Summary of the Invention

[0005] In view of this, multiple embodiments of this specification are dedicated to providing a micro light emitting diode display chip and a preparation method thereof, which are conducive to improving the yield and further expanding the product application of the micro light emitting diode display chip in the micro display field.

[0006] An embodiment of the present specification provides a micro light-emitting diode display chip, comprising: a first substrate, comprising a driving circuit and a plurality of first contacts electrically connected to the driving circuit; an LED semiconductor layer arranged on the first substrate, comprising a first doped semiconductor layer, an active layer, and a second doped semiconductor layer arranged in a stacked manner, the LED semiconductor layer being divided into a plurality of independently drivable LED units, the plurality of LED units being arranged in an array, and the first contacts being located between adjacent LED units; a plurality of insulating members, arranged on the first substrate and corresponding to the first contacts, the insulating members having openings exposing the corresponding first contacts; a bonding layer located between the first substrate and the LED semiconductor layer, comprising a bonding body electrically connected to the first doped semiconductor layer and a bonding pad located in the opening, the insulating member insulating the bonding pad from the bonding body, the bonding pad being electrically connected to the first contacts; the second doped semiconductor layer corresponding to the LED unit being electrically connected to the first contact via the bonding pad so that each LED unit can be independently driven.

[0007] An embodiment of the present specification provides a method for preparing a micro-light-emitting diode display chip, comprising: providing a first substrate, the first substrate including a driving circuit and a plurality of first contacts electrically connected to the driving circuit; disposing an insulating member on the first substrate corresponding to the first contacts, the insulating member having an opening exposing the corresponding first contacts; providing a second substrate, the second substrate having an LED semiconductor layer disposed thereon; bonding the first substrate to the LED semiconductor layer to form a bonding layer between the first substrate and the LED semiconductor layer; the insulating member being encapsulated within the bonding layer; removing the second substrate; processing the LED semiconductor layer to form a plurality of LED units arranged in an array, such that adjacent LED units can be driven independently; etching away the bonding layer located in a plurality of selected areas to expose the insulating member, the portion of the bonding layer remaining in the opening of the insulating member forming a bonding pad, the bonding pad being electrically connected to the first contact; the first contact being located between adjacent LED units, each LED unit being electrically connected to the first contact via the bonding pad, such that each LED unit can be driven independently.

[0008] In the embodiments of this specification, an insulating member is formed corresponding to the first contact, the insulating member having an opening exposing the corresponding first contact, and the bonding pad is located within the opening of the insulating member, thereby separating the first contact from the bonding body portion through the insulating member, and the insulating member insulates the bonding pad from the bonding body portion, which is beneficial for solving the problem of short circuiting of the LED unit. In addition, since the insulating member is provided, the bonding pad is retained within the opening, and the thickness of the bonding layer at the position corresponding to the insulating member can be reduced compared to the thickness without the insulating member. When forming an LED unit that can be driven independently, the thickness of the bonding layer can be reduced, reducing the difficulty of the process. At the same time, the risk of short circuit caused by the bonding layer removal process can be reduced, which is beneficial for improving the yield rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 Shown is a schematic cross-sectional structural diagram of a micro light emitting diode display chip provided in one embodiment.

[0010] Figure 2 Shown is a schematic top view of the first substrate and the insulating member provided in one embodiment.

[0011] Figure 3 Shown is a schematic cross-sectional structural diagram of a first substrate and an insulating member provided in one embodiment.

[0012] Figure 4 Shown is a schematic cross-sectional structural diagram of a first substrate and an insulating member provided in one embodiment.

[0013] Figure 5 FIG2 is a schematic top view of the structure of a micro light emitting diode display chip provided in one embodiment.

[0014] Figure 6 Shown is a schematic cross-sectional structural diagram of a micro light emitting diode display chip provided in one embodiment.

[0015] Figure 7 Shown is a schematic cross-sectional structural diagram of a micro light emitting diode display chip provided in one embodiment.

[0016] Figure 8 Shown is a schematic cross-sectional structural diagram of a micro light emitting diode display chip provided in one embodiment.

[0017] Figure 9 Shown is a schematic cross-sectional structural diagram of a micro light emitting diode display chip provided in one embodiment.

[0018] Figure 10 Shown is a schematic cross-sectional structural diagram of a micro light emitting diode display chip provided in one embodiment.

[0019] Figures 11a-11fShown are structural schematic diagrams of different preparation stages in a method for preparing a micro-light emitting diode display chip provided by one embodiment.

[0020] Figures 12a-12e Shown are structural schematic diagrams of different preparation stages in a method for preparing a micro-light emitting diode display chip provided by one embodiment.

[0021] Figures 13a-13e Shown are structural schematic diagrams of different preparation stages in a method for preparing a micro-light emitting diode display chip provided by one embodiment. DETAILED DESCRIPTION

[0022] The following will be combined with the drawings in the embodiments of this specification to clearly and completely describe the technical solutions in the embodiments of this specification. Obviously, the embodiments described are only part of the embodiments of this specification, not all of the embodiments. Based on the embodiments in this specification, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of this specification.

[0023] The meaning of “on” in this specification should be interpreted in the broadest manner, such that “on” not only means “directly on something” but also means “on something” including intermediate components or layers therebetween.

[0024] The term "layer" as used in this specification refers to a portion of a material comprising an area having a certain thickness. A layer may extend over the entire underlying or superstructure, or may have an extent that is less than the extent of the underlying or superstructure. In addition, a layer may be an area of ​​a homogeneous or inhomogeneous continuous structure, the thickness of which is less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure or between any pair of horizontal planes therebetween. A layer may extend horizontally, vertically and / or along a tapered surface. A layer may comprise multiple layers. For example, a semiconductor layer may comprise one or more doped or undoped semiconductor layers, and may comprise the same or different materials.

[0025] The term "micro" light emitting diode display chip used in this specification refers to the descriptive size of certain structures according to embodiments of this specification. The term "micro" used in this specification is intended to refer to a scale of 0.1 to 100 μm. However, it should be understood that the embodiments of this specification are not necessarily limited to this, and certain aspects of the embodiments may be applicable to larger and possibly smaller size scales.

[0026] As mentioned in the background, the process of forming a micro-LED display chip can lead to device defects. After careful research, the applicant discovered that this technical problem arises because, during the fabrication of a micro-LED display chip, a first substrate including a driver circuit is bonded to an LED semiconductor layer disposed on a second substrate to form multiple LED units. The LED units are then electrically connected to first contacts on the first substrate to enable driving of the LED units. To achieve bonding between the first substrate and the LED semiconductor layer, a bonding material layer, such as a bonding metal, can be provided in at least one of the LED semiconductor layer or the first substrate. The first substrate and the LED semiconductor layer are bonded to form a bonding layer. The bonding layer comprises a conductive bonding metal and is a continuous structure that covers the first contacts. Therefore, to enable driving of the LED units, at least the bonding layer covering the first contacts must be removed. Due to material properties and size limitations, the bonding layer is difficult to remove. During the bonding layer removal process, it is prone to incomplete or excessive removal. Incomplete removal can cause short circuits in the LED units, preventing them from emitting light properly, while excessive removal can damage the first substrate. Even if the process parameters are precisely controlled, there are still problems such as splashing and residue during the removal of the bonding layer, which can cause short circuits in the LED units and affect the production yield of micro light-emitting diode display chips.

[0027] In one embodiment of the present disclosure, a micro-LED display chip is provided. The micro-LED display chip may include: a first substrate including a driving circuit and a plurality of first contacts electrically connected to the driving circuit; an LED semiconductor layer disposed on the first substrate, including a stacked first doped semiconductor layer, an active layer, and a second doped semiconductor layer, the LED semiconductor layer being divided into a plurality of independently drivable LED units arranged in an array, with the first contacts located between adjacent LED units; a plurality of insulating members disposed on the first substrate corresponding to the first contacts, the insulating members having openings exposing the corresponding first contacts; a bonding layer disposed between the first substrate and the LED semiconductor layer, including a bonding body electrically connected to the first doped semiconductor layer and a bonding pad located within the opening, the insulating member insulating the bonding pad from the bonding body, the bonding pad being electrically connected to the first contacts; and second doped semiconductor layers corresponding to the LED units being electrically connected to the first contacts via the bonding pads, enabling each LED unit to be independently driven.

[0028] In some embodiments, the first substrate may be a complementary metal oxide semiconductor (CMOS) substrate, a thin film transistor (TFT) substrate, or a liquid crystal on silicon (LCOS) substrate. The first substrate may include a semiconductor material. For example, silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, or indium phosphide. The first substrate may include a non-conductive material. For example, glass or sapphire. The first substrate may include a driving circuit, which may be used to drive an LED unit. The driving circuit may be an active matrix driving circuit or a passive matrix driving circuit. The first substrate may include a plurality of first contacts, which are electrically connected to the driving circuit. One first contact may be connected to one LED unit to achieve independent driving of each LED unit. The first contact may be at least partially exposed on the surface of the substrate, which is conducive to the electrical connection between the LED unit and the first contact. Taking the first substrate as a thin-film transistor substrate as an example, the first substrate may include: a gate formed on the substrate, a gate insulating layer formed on the side of the gate facing away from the substrate, an active layer formed on the side of the gate insulating layer facing away from the gate, an interlayer insulating layer formed on the surface of the active layer and the gate insulating layer, a source through-hole and a drain through-hole provided on the interlayer insulating layer, the source and drain extending from the upper surface of the active layer near the through-hole through the source through-hole and the drain through-hole to the surface of the interlayer insulating layer, a planarization layer provided on the source, drain, and interlayer insulating layer, and a first contact provided on the planarization layer and electrically connected to the source or drain. The multiple first contacts are respectively used to electrically connect to the electrode layer of the LED unit. For example, the first contact can be electrically connected to the cathode of the LED unit to provide a cathode voltage to the LED unit.

[0029] See also Figure 1-Figure 3 In order to facilitate the description of the micro-LED display chip structure, Figure 1 FIG2 is a schematic cross-sectional view of a micro light emitting diode display chip provided in one embodiment; Figure 2 、 Figure 3 FIG2 is a schematic structural diagram of a first substrate and an insulating member in a micro light emitting diode display chip provided in one embodiment. Figure 3 To correspond Figure 2 Schematic diagram of the cross-sectional structure along line AA'.

[0030] See also Figure 1In some embodiments, the micro light emitting diode display chip includes an LED semiconductor layer 400, which is located on the first substrate 100. The LED semiconductor layer 400 can be located on the side of the first substrate 100 where the first contact 110 is provided. The LED semiconductor layer 400 can include a first doped semiconductor layer 411, an active layer 412, and a second doped semiconductor layer 413 arranged in a stacked manner. The first doped semiconductor layer can be a P-type semiconductor layer, and accordingly, the second doped semiconductor structure can be an N-type semiconductor layer. The N-type semiconductor layer or the P-type semiconductor layer can include a II-VI group material. For example, zinc selenide (ZnSe). The N-type semiconductor layer or the P-type semiconductor layer can include a III-V group nitrogen compound material. For example, gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or aluminum indium gallium nitride (AlInGaN). The first doped semiconductor layer and the second doped semiconductor layer can include different dopants. For example, the N-type semiconductor layer may include dopants such as silicon or germanium. The P-type semiconductor layer may include dopants such as magnesium or carbon. The N-type semiconductor layer and the P-type semiconductor layer may be a single-layer structure or a multi-layer structure. The active layer may include a quantum well (QW) material, which may be a single-layer quantum well light-emitting material, a multiple quantum well (MQW) light-emitting material, or a structure formed by alternating stacking of quantum well materials and barrier materials. The first doped semiconductor layer 411 is close to the first substrate 100, and the active layer 412 is located between the first doped semiconductor layer 411 and the second doped semiconductor layer 413. The LED semiconductor layer 400 can be divided into a plurality of independently driven LED units 410, such as Figure 1Three LED units are shown. Multiple LED units are arranged in an array, with first contacts located between adjacent LED units. Each LED unit can be electrically connected to a first contact, enabling independent driving of each LED unit. The LED semiconductor layer is divided into multiple independently drivable LED units. It is understood that each LED unit includes a first doped semiconductor layer, an active layer, and a second doped semiconductor layer covering a portion of the LED semiconductor layer. The multiple LED units can be connected via at least a portion of the thickness of the first doped semiconductor layer, or via the first doped semiconductor layer and at least a portion of the thickness of the active layer. The multiple LED units can be spaced apart, with the first doped semiconductor layer, active layer, and second doped semiconductor layer of the multiple LED units spaced apart. At least the second doped semiconductor layer of the multiple LED units can be spaced apart, thereby electrically isolating the multiple LED units and meeting the requirement for independent driving of the LED units. First contacts can be located between adjacent LED units, with each first contact exposed on the LED semiconductor layer. Each LED unit can be electrically connected to an adjacent first contact, and each LED unit can correspond to a first contact and be independently driven via the first contact.

[0031] See also Figure 1-Figure 3 . In some embodiments, the micro light emitting diode display chip includes a plurality of insulating members 210, and the insulating members 210 are disposed on the first substrate 100. The insulating member may be located on the surface of the first substrate. The material of the insulating member may be an insulating material. The material of the insulating member is a metal oxide, or at least one of an organic material. Metal oxides or organic materials have excellent insulating properties and are easy to pattern, thereby reducing the process difficulty of forming insulating members. Specifically, the material of the insulating member may be at least one of silicon dioxide, silicon nitride, aluminum oxide, zirconium dioxide, and titanium dioxide. The material of the insulating member may be at least one of polyimide, SU-8 photoresist, and benzocyclobutene (BCB). The insulating member 210 is disposed corresponding to the first contact 110, and the insulating member 210 has an opening exposing the corresponding first contact 110. One first contact 110 may correspond to one insulating member 210, and the first contact 110 may be exposed through the opening provided in the insulating member 210, thereby being electrically connected to the LED unit. Multiple insulating members can be formed on the first substrate 100, spaced apart. This reduces the area required for the insulating members, facilitates lightweight and thin micro-LED display chips, and reduces the risk of short circuits in the LED units. The insulating members each have openings that expose corresponding first contacts. Accordingly, the insulating member can be hollow, forming an insulating member with openings. The openings in the insulating member expose the first contacts. Since the LED units are electrically connected to the first contacts, driving the LED units is facilitated.

[0032] See also Figure 1. In some embodiments, the micro light emitting diode display chip may include a bonding layer 310, and the bonding layer 310 may be located between the first substrate 100 and the LED semiconductor layer 400. The material of the bonding layer may include a metal. The material of the bonding layer may be at least one of metal materials such as aluminum (Al), copper (Cu), platinum (Pt), chromium (Cr), titanium (Ti), germanium (Ge), nickel (Ni), gold (Au), and tin (Sn). The bonding layer 310 may include a bonding body portion 311 and a bonding pad 312. The bonding body portion 311 may be electrically connected to the first doped semiconductor layer 411, and the bonding pad 312 is located in the opening. The bonding pad 312 and the bonding body portion 311 are insulated from each other, and the bonding pad 312 and the bonding body portion 311 may be spatially separated by the insulating member 210 to achieve mutual insulation. The bonding body portion 311 and the bonding pad 312 may be made of the same material. The bonding pad 312 is electrically connected to the first contact 110. The second doped semiconductor layer corresponding to the LED unit is electrically connected to the first contact via the bonding pad, enabling each LED unit to be driven independently. The LED unit may be provided with an electrode layer electrically connected to the second doped semiconductor layer and the bonding pad, thereby electrically connecting the second doped semiconductor corresponding to the LED unit to the first contact via the bonding pad.

[0033] The micro-LED display chip provided in the embodiments of this specification utilizes an insulating member corresponding to a first contact, thereby separating the first contact from the bonding body. The insulating member includes an opening exposing the corresponding first contact, and a bonding pad is located within the opening. This ensures electrical connection between the first contact and the LED unit while separating the bonding pad from the bonding body, thereby facilitating short-circuiting of the LED unit. Furthermore, the provision of the bonding pad improves the stability of the electrical connection between the LED unit and the first contact. Furthermore, due to the provision of the insulating member and the opening corresponding to the first contact, it is understood that during the fabrication process of the micro-LED display chip, only the bonding layer material covering the insulating member can be removed to achieve mutual insulation between the bonding pad and the bonding body. The insulating member protrudes from the surface of the first substrate compared to the area without the insulating member, thereby reducing the thickness of the bonding layer that needs to be removed and simplifying the bonding layer removal process. The presence of the insulating member and the bonding pad protects the first contact, thereby improving the yield of the micro-LED display chip.

[0034] See also Figure 2 and Figure 3. In some embodiments, the insulating member 210 is provided corresponding to the first contact 110, and the insulating member has an opening exposing the corresponding first contact. The first contact 110 may be located within the outer contour of the orthographic projection of the insulating member 210 on the first substrate 100. The insulating member may separate the first contact from the bonding body portion, thereby avoiding short circuiting of the LED unit. The first contact may be exposed to the first substrate at least partially on its upper surface, and the opening of the insulating member exposes the first contact corresponding to the insulating member. The first contact exposed on the surface of the first substrate is partially located within the outer contour of the orthographic projection of the insulating member 210 on the first substrate 100, thereby achieving mutual insulation between the first contact and the bonding body portion.

[0035] See also Figure 3 and Figure 4 . In some embodiments, the insulating member 210 has an opening that exposes the corresponding first contact 110, and the first contact 110 may be at least partially located within the inner contour of the orthographic projection of the insulating member 210 on the first substrate 100, so that the first contact and the LED unit can be electrically connected through the bonding pad. The first contact may be located within the inner contour of the orthographic projection of the insulating member on the first substrate, which is beneficial to increase the contact area between the first contact and the bonding pad and improve the stability of the electrical connection. The first contact 110 may be at least partially located within the inner contour of the orthographic projection of the insulating member 210 on the first substrate 100, and located within the outer contour of the orthographic projection of the insulating member 210 on the first substrate 100. It can be understood that when the first contact is at least partially exposed on the surface of the substrate, the first contact at least exposed on the surface of the substrate may be located within the outer contour of the orthographic projection of the insulating member 210 on the first substrate 100. In this way, the short circuit problem of the LED unit is solved while meeting the electrical connection requirements between the first contact and the LED unit.

[0036] See also Figure 5-Figure 7 . Figure 6 To correspond Figure 5 Schematic diagram of the cross-sectional structure along line BB'; Figure 7 To correspond Figure 5Schematic diagram of a cross-sectional structure along line AA' in FIG. For illustrative purposes, the structure below the electrode layer 600 and the passivation layer 510 is shown with dashed lines. In some embodiments, a micro-LED display chip may include: a passivation layer 510 disposed on the second doped semiconductor layer 413, having a first opening corresponding to the bonding pad 312 and a second opening corresponding to the second doped semiconductor layer 413; and an electrode layer 600 disposed on the passivation layer 510, electrically connected to the bonding pad 312 and the second doped semiconductor layer 413 of each LED unit through the first opening and the second opening. The passivation layer 510 is located on the second doped semiconductor layer 413 and may be located on the surface of the second doped semiconductor layer 413. The passivation layer 510 may be located on the second doped semiconductor layer 413 and extend to the surface of the insulating member 210 facing away from the first substrate 100. The passivation layer may be made of an insulating material. The passivation layer material may be at least one of silicon dioxide, silicon nitride, aluminum oxide, and the like. The passivation layer material may be the same as or different from the insulating member material. The passivation layer 510 extends to the surface of the insulating member 210 facing away from the first substrate 100. The passivation layer 510 may contact the surface of the insulating member 210 facing away from the first substrate 100, and the passivation layer 510 may cover the insulating member 210. The passivation layer 510 has a second opening corresponding to the second doped semiconductor layer 413. The passivation layer 510 exposes at least a portion of the surface of the second doped semiconductor layer 413 of each LED unit facing away from the first substrate 100, for achieving electrical connection between the electrode layer 600 and the second doped semiconductor layer 413. The passivation layer 510 has a first opening corresponding to the bonding pad 312, and the electrode layer 600 may directly contact the bonding pad 312 to achieve electrical connection.

[0037] In some embodiments, the material of the electrode layer may be a transparent conductive material. For example, indium tin oxide (ITO). The light emitting direction of the LED unit in the micro light emitting diode display chip may be along the direction of the LED semiconductor layer close to the electrode layer, and the transparent conductive material is conducive to improving the light extraction efficiency. The material of the bonding layer may be a metal. For example, aluminum (Al), copper (Cu), platinum (Pt), chromium (Cr), titanium (Ti), germanium (Ge), nickel (Ni), etc. The material of the bonding body and the material of the bonding pad may be the same. The passivation layer and the insulating member may separate the electrode layer and the bonding body, and the electrode layer and the bonding body are spatially isolated and have no direct contact, thereby being insulated from each other. The bonding pad may reduce the extension thickness of the electrode layer in the direction perpendicular to the first substrate close to the LED semiconductor layer, may improve the continuity of the electrode, reduce the height difference between the electrode layer and the first contact for achieving electrical connection, and is conducive to improving the stability of the electrical connection.

[0038] See also Figure 5-Figure 7. In some embodiments, the electrode layer 600 may include a plurality of electrode structures 610 arranged at intervals, and the electrode structures 610 of the plurality of LED units are arranged at intervals, and each electrode structure corresponds to an LED unit. The bonding body portions 311 corresponding to the plurality of LED units may be integrally provided, and the bonding body portions 311 electrically connected to the first doped semiconductor layers 411 of the plurality of LED units may be interconnected, which is beneficial for reducing the difficulty of driving. It can be understood that the bonding body portion 311 may serve as an electrode connected to the first doped semiconductor layer 411 in the LED unit. One LED unit may correspond to a partial area of ​​the bonding body portion 311 and one electrode structure 610.

[0039] In some embodiments, the first substrate 100 further includes a second contact electrically connected to the driver circuit. The first doped semiconductor layer 411 corresponding to the LED unit is electrically connected to the second contact via the bonding body 311. The bonding bodies 311 of multiple LED units can be interconnected, or at least the bonding bodies 311 of some LED units can be interconnected. The LED unit is electrically connected to the driver circuit via the first and second contacts to achieve driving of the LED unit.

[0040] See also Figure 1 and Figure 8 . In some embodiments, the height of the insulating member 210 is less than or equal to the height of the bonding body portion 311. This is beneficial for forming a flat surface during the preparation process, which facilitates the preparation of the LED semiconductor layer. The bonding pad height may be equal to the insulating member height, and the insulating member height may be less than the bonding body portion height. The first substrate has a first surface close to one side of the insulating member. The height of the insulating member 210 may be the dimension of the insulating member along the first surface direction perpendicular to the first substrate, and the height of the bonding body portion 311 may be the dimension of the bonding body portion along the first surface direction perpendicular to the first substrate. In the embodiments of this specification, the height or thickness may refer to the dimension along the first surface direction perpendicular to the first substrate.

[0041] See also Figure 1 and Figure 8 In some embodiments, the height of the bonding pad 312 is less than or equal to the height of the insulating member 210. Accordingly, the bonding pad 312 can be located within an opening provided in the insulating member 210, which facilitates the use of the insulating member 210 to insulate the bonding pad 312 from the bonding body 311. The height of the bonding pad 312 can be the dimension of the bonding pad along a direction perpendicular to the first surface of the first substrate.

[0042] It is understood that the height of the bonding pad 312 can be less than or equal to the height of the bonding body 311 . The height of the bonding pad 312 can be equal to the height of the insulating member 110 , and the height of the bonding pad 312 can be equal to the height of the bonding body 311 .

[0043] See also Figure 9 In some embodiments, the LED semiconductor layer includes a step structure 4131 corresponding to each LED unit, the step structures of the multiple LED units are arranged at intervals, and the passivation layer 510 covers the circumference of the step structure. For ease of understanding, Figure 8 The dashed box in the middle diagram illustrates a stepped structure 4131. The stepped structures are spaced apart to accommodate the independent operation of multiple LED units. The passivation layer surrounding the stepped structures protects the LED semiconductor layer and enables electrical connection between the second doped semiconductor layer and the electrode layer.

[0044] In some embodiments, the height of the stepped structure 4131 can be greater than or equal to the thickness of the second doped semiconductor layer 413, thereby spacing the second doped semiconductor layers 413 of multiple LED units. The stepped structures of the LED units can be connected at least through the first doped semiconductor layer 411. The stepped structure 4131 can include the second doped semiconductor layer 413; alternatively, the stepped structure 4131 can include the second doped semiconductor layer 413 and at least a portion of the thickness of the active layer 412; alternatively, the stepped structure 4131 can include the second doped semiconductor layer 413, the active layer 412, and a portion of the thickness of the first doped semiconductor layer 411. A stepped structure height greater than or equal to the thickness of the second doped semiconductor layer can electrically isolate the multiple LED units, thereby meeting the requirement for independent operation of the LED units. The stepped structure height can be less than the thickness of the LED semiconductor layer, increasing the contact area between the LED semiconductor layer and the bonding layer, improving the stability of the LED units, and reducing the risk of them falling off. The stepped structure height can be the dimension of the stepped structure along a direction perpendicular to the first surface of the first substrate. The thickness of the second doped semiconductor layer may be a dimension of the second doped semiconductor layer along a direction perpendicular to the first surface of the first substrate.

[0045] See also Figure 10 In some embodiments, the micro LED display chip may include an ion implantation barrier material 710 located between adjacent LED units, the ion implantation barrier material being used to electrically isolate adjacent LED units. The ion implantation barrier material may include H + 、He + 、N + , O + 、F + Mg + 、Si + or Ar +One or more of the plasma. The height of the ion implantation barrier material 710 is greater than or equal to the thickness of the second doped semiconductor layer 413. The height of the ion implantation barrier material 710 may be less than the thickness of the LED semiconductor layer. The height of the ion implantation barrier material may be understood as a height range of the ion implantation barrier material along the first surface direction perpendicular to the first substrate. The height of the ion implantation barrier material 710 may be the same as the thickness of the second doped semiconductor layer 413; the height of the ion implantation barrier material 710 may be the same as the sum of the thickness of the second doped semiconductor layer 413 and the thickness of at least part of the active layer 412; or the height of the ion implantation barrier material 710 may be the same as the sum of the thickness of the second doped semiconductor layer 413, the thickness of the active layer 412 and the thickness of part of the first doped semiconductor layer 411. The ion implantation barrier material separates adjacent LED units, thereby electrically isolating adjacent LED units to form a plurality of array-arranged LED units, thereby meeting the requirement that the LED units can be independent.

[0046] In some embodiments, the first doped semiconductor layers corresponding to the plurality of LED units are integrally connected. The plurality of LED units may each have a stepped structure located in the LED semiconductor layer; alternatively, ion implantation barrier material may be provided between the plurality of LED units. The integral connection of the first doped semiconductor layers of the plurality of LED units may be achieved by integrally connecting through a partial thickness of the first doped semiconductor layer, or by integrally connecting through the first doped semiconductor layer and at least a partial thickness of the active layer. This integral connection can improve adhesion between the LED units and adjacent film layers while also benefiting the protection of the LED semiconductor layer.

[0047] In some embodiments, the insulating member 210 is a hollow cylinder. For example, the insulating member may be a hollow cylinder, or a hollow prism. The orthographic projection of the surface of the insulating member facing away from the first substrate on the first substrate may overlap with the surface of the insulating member close to the first substrate. This facilitates process preparation, helps reduce the gap between adjacent film layers, and improves stability. The orthographic projection of the insulating member on the first substrate may be a circular ring, a rectangular ring, or a polygonal ring. Preferably, the orthographic projection of the insulating member on the first substrate is in the shape of a circular ring, which allows the bonding layer to better infiltrate and coat the insulating member during the bonding process.

[0048] In some embodiments, a method for preparing a micro-LED display chip is provided. The method for preparing a micro-LED display chip may include the following steps.

[0049] Step S110: providing a first substrate, wherein the first substrate includes a driving circuit and a plurality of first contacts electrically connected to the driving circuit.

[0050] See also Figure 11aIn some embodiments, a driving circuit and a first contact 110 may be formed in the first substrate 100, and the first contact is electrically connected to the driving circuit. The first contact may be at least partially exposed on the surface of the first substrate. For example, the surface of the first contact close to the insulating member may be at least partially exposed on the surface of the first substrate. The first substrate may be a glass substrate or a sapphire substrate. The driving circuit may be an active matrix driving circuit or a passive matrix driving circuit.

[0051] Step S120 : disposing an insulating member on the first substrate corresponding to the first contact, wherein the insulating member has an opening exposing the corresponding first contact.

[0052] See also Figure 11b In some embodiments, the insulating member 210 may be formed on the surface of the first substrate 100 using a deposition process. The deposition process may be a chemical vapor deposition process or an atomic layer deposition process. The insulating member may be made of at least one of silicon dioxide, silicon nitride, and aluminum oxide.

[0053] In some embodiments, the step of providing insulating members on the first substrate corresponding to the first contacts, wherein the insulating members have openings exposing the corresponding first contacts, may include: depositing an insulating layer on the surface of the first substrate, wherein the insulating layer continuously extends and covers each first contact; etching a portion of the insulating layer until the first substrate is exposed to form insulating members corresponding to each first contact; wherein the insulating members have openings exposing the corresponding first contacts. Specifically, a continuous insulating layer may be first deposited, and then the regions of the insulating layer corresponding to the first contacts may be etched away, and the insulating layer may be etched to form a plurality of insulating members spaced apart from each other, thereby forming insulating members provided corresponding to the first contacts, wherein the insulating members have openings exposing the corresponding first contacts.

[0054] In some embodiments, an insulating member having openings corresponding to the first contacts can be deposited on the surface of a first substrate using a mask. The mask has opening regions and non-opening regions. The opening regions allow the insulating member's material to be etched away through the openings, while the corresponding material in the non-opening regions remains on the first substrate. It is understood that the non-opening regions of the mask can correspond to at least the first contacts of the first substrate, thereby forming an insulating member having openings.

[0055] See also Figure 11c . In some embodiments, a bonding metal 320 may be further provided on the first substrate 100, and the bonding metal 320 may cover the insulating member 110 and the first substrate 100. The bonding metal may be in contact with the surface of the first substrate and the surface of the insulating member facing away from the first substrate. The bonding metal material may be at least one of Au, Sn, Cr, Ti, Pt, Al, Cu, Ge, and Ni. The bonding metal may be prepared by one or more processes selected from the group consisting of deposition, evaporation, magnetron sputtering, thermal evaporation, chemical plating, electroplating, and electron beam evaporation.

[0056] In some embodiments, the thickness of the bonding metal 320 is greater than or equal to the thickness of the insulating member 210. In some embodiments, the ratio of the bonding metal thickness to the insulating member height along the direction perpendicular to the first surface of the first substrate can be 1.5-2. This is conducive to forming a flat bonding layer after the first substrate and the LED semiconductor layer are bonded. The bonding metal thickness can be greater than the insulating member height, so that when the first substrate and the LED semiconductor layer are bonded, the insulating member height does not affect the bonding effect. At the same time, the contact area can be increased, which is conducive to increasing the bonding force. The bonding metal thickness can be the dimension of the bonding metal along the direction perpendicular to the first surface of the first substrate. The insulating member height can be the dimension of the insulating member along the direction perpendicular to the first surface of the first substrate. In some embodiments, the bonding metal thickness along the direction perpendicular to the first surface of the first substrate is 100 nanometers to 100 microns. Preferably, the bonding metal thickness is 500 nanometers to 1 micron.

[0057] Step S130: providing a second substrate, on which an LED semiconductor layer is disposed.

[0058] See also Figure 11d In some embodiments, the second substrate material may include one or more of gallium arsenide, sapphire, silicon, silicon carbide, gallium nitride, germanium, and the like. An LED semiconductor layer 400 may be disposed on the second substrate 810. The LED semiconductor layer 400 may include a stacked first doped semiconductor layer 411, an active layer 412, and a second doped semiconductor layer 413, with the second doped semiconductor layer 413 being adjacent to the second substrate 810. The LED semiconductor layer 400 may be formed using an evaporation process.

[0059] In some embodiments, a bonding metal 320 may be disposed on the LED semiconductor layer 400, and the bonding metal may cover the LED semiconductor layer. The bonding metal material may be at least one of Cr, Ti, Pt, Al, Cu, Ge, and Ni. The bonding metal may be formed by one or more processes including deposition, evaporation, magnetron sputtering, thermal evaporation, chemical plating, electroplating, and electron beam evaporation. The bonding metal may be disposed on the LED semiconductor layer and the first substrate. The bonding metal materials disposed on the LED semiconductor layer and the first substrate may be the same or different.

[0060] Step S140 : bonding the first substrate and the LED semiconductor layer to form a bonding layer between the first substrate and the LED semiconductor layer; the insulating member is enclosed in the bonding layer.

[0061] See also Figure 11eIn some embodiments, a bonding metal may be provided on the first substrate and / or the LED semiconductor layer. After the first substrate and the LED semiconductor layer are bonded, the bonding metal forms a bonding layer 310. The bonding layer 310 covers the first substrate 100 and the insulating member 110 and fills the openings in the insulating member 110. When the bonding metal is provided on the first substrate, there may be a height difference between the bonding metal and the insulating member. This height difference can be eliminated by bonding the first substrate and the LED semiconductor layer. The bonding layer may have a continuously extending structure and may have a flat surface.

[0062] Step S150: removing the second substrate.

[0063] See also Figure 11e 、 Figure 11f . In some embodiments, the second substrate 810 can be removed by one or more methods such as laser stripping, mechanical stripping, and etching. The second substrate 810 can be removed after bonding. After removing the second substrate, the second doped semiconductor layer 413 can be thinned. The thinning process can be performed by one or more methods such as dry etching, wet etching, or chemical mechanical polishing. The thickness of the LED semiconductor layer 400 after thinning can be 0.3 microns to 5 microns, or can be 0.4 microns to 4 microns, or can be 0.5 microns to 3 microns. The thickness of the LED semiconductor layer can be the size of the LED semiconductor layer along the first surface direction perpendicular to the first substrate.

[0064] Step S160: processing the LED semiconductor layer to form a plurality of LED units arranged in an array, and enabling adjacent LED units to be driven independently.

[0065] See also Figure 11f 、 Figure 12aIn some embodiments, at least a portion of the thickness of the LED semiconductor layer 400 can be etched to form a stepped structure 4131, which is used to form multiple LED units arranged in an array. At least a portion of the second doped semiconductor layer 413 can be etched away. This allows the second doped semiconductor layers of multiple LED units to be spaced apart to ensure that adjacent LED units can be driven independently. Alternatively, a portion of the second doped semiconductor layer 413 and at least a portion of the thickness of the active layer 412 can be etched away. Alternatively, a portion of the second doped semiconductor layer 413, the active layer 412, and a portion of the thickness of the first doped semiconductor layer 411 can be etched away. The thickness of the LED semiconductor layer not removed in the portion can be between 0.05 microns and 1 micron; or between 0.05 microns and 0.7 microns; or between 0.05 microns and 0.5 microns. Dry etching or wet etching can be used to remove at least a portion of the thickness of the LED semiconductor layer in the portion. The thickness of the LED semiconductor layer not removed in the portion can connect multiple LED units, which helps reduce the risk of film delamination.

[0066] See also Figure 11f 、 Figure 13a In some embodiments, the barrier material 710 is ion-implanted into a portion of at least a portion of the thickness of the LED semiconductor layer. The LED semiconductor layer not ion-implanted with the barrier material can be used to form an LED unit. An ion implantation process can be used. The ion implantation barrier material can be H + 、He + 、N + , O + 、F + Mg + 、Si + or Ar + One or more of plasma. Isolation material can be ion-implanted into the second doped semiconductor layer. The second doped semiconductor layers of multiple LED units are spaced apart to meet the requirement that adjacent LED units can be driven independently. Alternatively, isolation material can be ion-implanted into the second doped semiconductor layer and at least part of the thickness of the active layer; or isolation material can be ion-implanted into the second doped semiconductor layer, the active layer and part of the thickness of the first doped semiconductor layer. The LED semiconductor layer in the area of ​​the ion-implanted isolation material has insulating properties, and the LED semiconductor layer that has not been ion-implanted is used to form LED units. The LED semiconductor layer can be divided into multiple LED units that can be driven independently.

[0067] Step S170: etching away the bonding layer located in a plurality of selected areas to expose the insulating member, and forming a bonding pad on the portion of the bonding layer remaining in the opening of the insulating member, and the bonding pad is electrically connected to the first contact.

[0068] See also Figure 12b or Figure 13b In some embodiments, the selected area may include an area covering the insulating member and the opening. The bonding layer 310 on the surface of the insulating member 210 and at least a portion of the thickness of the bonding layer 310 corresponding to the opening may be etched away, thereby exposing the insulating member from the bonding layer. The portion of the bonding layer remaining in the opening of the insulating member forms a bonding pad 312. The height of the bonding pad may be less than or equal to the depth of the opening.

[0069] In some embodiments, after forming a stepped structure or ion-implanting an isolation material, the LED semiconductor layer covering the insulating member and the opening can be removed to form an LED unit. The bonding layer in selected areas is then removed to form a bonding pad. The bonding layer outside the insulating member forms the bonding body.

[0070] Step S180: The first contact is located between adjacent LED units, and each LED unit is electrically connected to the first contact via the bonding pad so that each LED unit can be driven independently.

[0071] See also Figure 12c and Figure 12d , or see Figure 13c and Figure 13d . In some embodiments, a passivation layer 510 can be provided on the LED unit; a first opening penetrating the passivation layer 510 is provided in the passivation layer 510 corresponding to the bonding pad 312, and a second opening penetrating the passivation layer 510 is provided corresponding to the second doped semiconductor layer 413. The passivation layer material may include silicon dioxide, aluminum oxide, silicon nitride, polyimide, SU-8 photoresist or other photosensitive materials. The passivation layer can be formed by a deposition process. The passivation layer can extend continuously. When the LED unit has a step structure, the passivation layer can cover the circumferential surface of the LED unit; when the isolation material is ion-implanted into a partial area of ​​the LED semiconductor layer, the passivation layer covers the LED unit and the area where the ion-implanted isolation material is located. The first opening and the second opening can be formed by an etching process. The area where the passivation layer covers the bonding pad can be removed to form the first opening, and at least a portion of the area where the passivation layer covers the second doped semiconductor layer can be removed to form the second opening.

[0072] In some embodiments, an electrode layer may be provided on the LED unit; the electrode layer is electrically connected to the second doped semiconductor layer and the bonding pad, so that each LED unit is electrically connected to the first contact via the bonding pad, thereby enabling each LED unit to be driven independently.

[0073] See also Figure 12e or Figure 13e In some embodiments, a passivation layer may be provided on the LED unit before providing the electrode layer thereon. A first opening extending through the passivation layer 510 may be provided in the passivation layer 510 corresponding to the bonding pad, and a second opening extending through the passivation layer 510 may be provided corresponding to the second doped semiconductor layer 413. An electrode layer 600 may be provided on the passivation layer 510; the electrode layer may be electrically connected to the bonding pad 312 and the second doped semiconductor layer 413 through the first opening and the second opening. This allows the LED unit to be electrically connected to the first contact 110 via the bonding pad 312. The electrode layer may include a conductive material, such as one or more of ITO, Cr, Ti, Pt, Au, Al, Cu, Ge, or Ni. The electrode layer may be formed by deposition or evaporation. In some embodiments, the electrode layer 600 may include a plurality of spaced-apart electrode structures 610, each of which may be provided corresponding to the LED unit. A mask may be used to form the plurality of spaced-apart electrode structures.

[0074] In some embodiments, the first substrate further includes a second contact electrically connected to the driving circuit, and the first doped semiconductor layer corresponding to the LED unit is electrically connected to the second contact via the bonding body portion.

[0075] The method for preparing a micro-LED display chip provided in the embodiment of this specification provides an insulating member on the first substrate. When the bonding layer covering the insulating member is removed, the insulating member can protect the first substrate. Due to the presence of the insulating member, it is not necessary to completely remove the bonding layer in the opening, which can reduce the extension height of the electrode layer in the direction perpendicular to the upper surface of the first substrate, which is beneficial to improving the stability of the electrical connection. Due to the provision of the insulating member, the thickness of the removed bonding layer can be reduced, which is beneficial to reducing the difficulty of the process and preventing the LED unit from being short-circuited due to problems such as splashing of the bonding layer material and incomplete removal during the removal process. At the same time, the insulating member can play an insulating effect between the first contact and the bonding body, and between the bonding body and the bonding pad, which is beneficial to avoiding short-circuiting of the LED unit and improving the preparation yield. In addition, in the embodiment of the present application, multiple LED units are integrally formed, which is beneficial to reducing the difficulty of preparing the micro-LED display chip and improving the preparation yield, and is beneficial to improving the application of the micro-LED display chip in products in the micro-display field.

[0076] The various embodiments in this specification emphasize the differences between the various embodiments, and the various embodiments can be interpreted in comparison with each other. Any combination of the various embodiments in this specification based on general technical knowledge by those skilled in the art is within the scope of this specification.

[0077] The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0078] The above descriptions are only some of the implementation methods in this specification and are not intended to limit this specification. Any modifications, equivalent replacements, etc. made within the spirit and principles of this specification should be included in the scope of disclosure of this specification.

Claims

1. A micro light emitting diode display chip, characterized in that: include: a first substrate comprising a driving circuit and a plurality of first contacts electrically connected to the driving circuit; An LED semiconductor layer disposed on the first substrate includes a first doped semiconductor layer, an active layer, and a second doped semiconductor layer stacked together, wherein the LED semiconductor layer is divided into a plurality of independently drivable LED units, the plurality of LED units being arranged in an array, and the first contact being located between adjacent LED units; a plurality of insulating members disposed on the first substrate and corresponding to the first contacts, wherein the insulating members have openings exposing the corresponding first contacts; At least a portion of the first contact is exposed on the first surface of the first substrate, and the opening extends from a side of the insulating member away from the first surface to the first surface; The portion of the first contact exposed on the first surface is located within the outer contour of the orthographic projection of the insulating member on the first surface; the insulating member is a hollow structure; A bonding layer located between the first substrate and the LED semiconductor layer includes a bonding body electrically connected to the first doped semiconductor layer and a bonding pad located within the opening. The insulating member insulates the bonding pad from the bonding body and from the first contact. The bonding pad is electrically connected to the first contact. The second doped semiconductor layer corresponding to the LED unit is electrically connected to the first contact via the bonding pad, enabling each LED unit to be independently driven. The bonding body is formed outside the opening, and the bonding pad is formed within the opening and covers the first contact exposed by the opening. The height of the insulating member is less than or equal to the height of the bonding body portion.

2. The micro light emitting diode display chip according to claim 1, characterized in that: The height of the bonding pad is less than or equal to the height of the insulating member.

3. The micro light emitting diode display chip according to claim 1, characterized in that: The insulating member is made of at least one of metal oxide and organic material.

4. The micro light emitting diode display chip according to claim 1, characterized in that: Also includes: a passivation layer, disposed on the second doped semiconductor layer, and having a first opening corresponding to the bonding pad and a second opening corresponding to the second doped semiconductor layer; The electrode layer is disposed on the passivation layer and is electrically connected to the bonding pad of each LED unit and the second doped semiconductor layer through the first opening and the second opening.

5. The micro light emitting diode display chip according to claim 4, characterized in that: The LED semiconductor layer includes a step structure corresponding to each of the LED units. The step structures of the plurality of LED units are arranged at intervals. The passivation layer covers the circumference of the step structure.

6. The micro light emitting diode display chip according to claim 5, characterized in that: The height of the step structure is greater than or equal to the thickness of the second doped semiconductor layer.

7. The micro light emitting diode display chip according to claim 4, characterized in that: Also includes: An ion implantation barrier material is located between adjacent LED units, and the ion implantation barrier material is used to electrically isolate the adjacent LED units.

8. The micro light emitting diode display chip according to claim 7, characterized in that: The height of the ion implantation barrier material is greater than or equal to the thickness of the second doped semiconductor layer.

9. The micro light emitting diode display chip according to claim 1, characterized in that: The first substrate further includes a second contact electrically connected to the driving circuit, and the first doped semiconductor layer corresponding to the LED unit is electrically connected to the second contact via the bonding body portion.

10. The micro light emitting diode display chip according to claim 4, characterized in that: The first doped semiconductor layers corresponding to the plurality of LED units are connected in one piece.

11. The micro light emitting diode display chip according to claim 4, characterized in that: The electrode layer includes a plurality of electrode structures arranged at intervals. The electrode structures of the plurality of LED units are arranged at intervals, and the bonding main bodies corresponding to the plurality of LED units are integrally arranged.

12. A method for preparing a micro light emitting diode display chip, characterized in that: include: Providing a first substrate, wherein the first substrate includes a driving circuit and a plurality of first contacts electrically connected to the driving circuit; At least a portion of the first contact is exposed on the first surface of the first substrate; An insulating member is provided on the first substrate corresponding to the first contact, and the insulating member has an opening exposing the corresponding first contact; The opening extends from a side of the insulating member away from the first surface to the first surface; Providing a second substrate, on which an LED semiconductor layer is disposed; Bonding the first substrate to the LED semiconductor layer to form a bonding layer between the first substrate and the LED semiconductor layer; The insulating member is enclosed in the bonding layer; removing the second substrate; Processing the LED semiconductor layer to form a plurality of LED units arranged in an array, and enabling adjacent LED units to be driven independently; The bonding layer located in a plurality of selected areas is etched away to expose the insulating member, wherein the portion of the bonding layer remaining in the opening of the insulating member after etching forms a bonding pad, wherein the bonding pad is electrically connected to the first contact, and the portion of the bonding layer located outside the opening after etching forms a bonding body portion, wherein the bonding body portion is provided between the LED unit and the first substrate, and the height of the insulating member is less than or equal to the height of the bonding body portion; wherein the selected area includes an area covering the insulating member and the opening; The first contact is located between adjacent LED units, and each LED unit is electrically connected to the first contact via the bonding pad so that each LED unit can be driven independently.

13. The method according to claim 12, characterized in that The step of processing the LED semiconductor layer to form a plurality of LED units arranged in an array and enabling adjacent LED units to be driven independently includes: Etching a partial area of ​​at least a partial thickness of the LED semiconductor layer; wherein the LED semiconductor layer includes a first doped semiconductor layer, an active layer, and a second doped semiconductor layer arranged in a stacked manner, and the first doped semiconductor layer is close to the first substrate; after etching, the LED semiconductor layer is divided into a plurality of LED units arranged in an array, and adjacent LED units can be driven independently.

14. The method according to claim 12, characterized in that The step of processing the LED semiconductor layer to form a plurality of LED units arranged in an array and enabling adjacent LED units to be driven independently includes: Ion implantation of a barrier material into a partial region of at least a partial thickness of the LED semiconductor layer; wherein the LED semiconductor layer comprises a first doped semiconductor layer, an active layer, and a second doped semiconductor layer arranged in a stacked manner, and the first doped semiconductor layer is close to the first substrate; after etching, the LED semiconductor layer is divided into a plurality of LED units arranged in an array, and adjacent LED units can be driven independently.

15. The method according to claim 14, characterized in that The first contact is located between adjacent LED units, and the step of electrically connecting each LED unit to the first contact via the bonding pad so that each LED unit can be driven independently includes: An electrode layer is provided on the LED unit; wherein the electrode layer is electrically connected to the second doped semiconductor layer and the bonding pad.

16. The method according to claim 15, characterized in that Before the electrode layer is provided on the LED unit, the method further comprises: providing a passivation layer on the LED unit; A first opening penetrating the passivation layer is provided in the passivation layer corresponding to the bonding pad, and a second opening penetrating the passivation layer is provided in the passivation layer corresponding to the second doped semiconductor layer.

17. The method according to claim 12, wherein: The step of disposing an insulating member on the first substrate corresponding to the first contact, wherein the insulating member has an opening exposing the corresponding first contact, comprises: Depositing an insulating layer on the surface of the first substrate, wherein the insulating layer continuously extends and covers each of the first contacts; Partial regions of the insulating layer are etched until the first substrate is exposed to form insulating members corresponding to the first contacts; wherein the insulating members have openings exposing the corresponding first contacts.

18. The method according to claim 12, characterized in that The step of bonding the first substrate to the LED semiconductor layer includes: Disposing bonding metal on the first substrate and / or the LED semiconductor layer; The first substrate is bonded to the LED semiconductor layer to form a bonding layer between the first substrate and the LED semiconductor layer; the insulating member is enclosed in the bonding layer.

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