Photoelectric conversion module, electronic instrument, power supply module

Abstract

The present invention relates to a photoelectric conversion module, an electronic instrument, and a power supply module. In the photoelectric conversion module, there is a problem that the difference in photoelectric conversion efficiency between a low illuminance environment and a high illuminance environment becomes larger due to reverse current generated in a partial region of an electrode near a connection portion where photoelectric conversion elements are connected in series. The photoelectric conversion module of the present invention has a plurality of electrically connected photoelectric conversion elements. The photoelectric conversion elements sequentially have a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion module has a first photoelectric conversion element, a second photoelectric conversion element, and a connection portion that connects the first photoelectric conversion element and the second photoelectric conversion element in series. The first electrode or the second electrode constituting the first photoelectric conversion element has a contact region in contact with the connection portion. When the length in the connection direction of the contact region is set to X and the length in the connection direction around the contact region is set to Y, the value of X / (Y - X) is 0.3 or more.

Description

Technical Field

[0001] The present invention relates to a photoelectric conversion module, an electronic instrument, and a power supply module. Background Art

[0002] In recent years, an IoT (Internet of Things) society in which it is possible to achieve interconnection of all things and integrated control has been expected. In order to realize such an IoT society, it is necessary to install a large number of sensors on various objects to acquire data, but a power supply for driving a large number of sensors is required. Connecting a large number of sensors and using a storage battery is impractical, and due to the growing social demand for reducing the environmental load, it is expected that an environmental power generation element provides power.

[0003] Among them, a photoelectric conversion element has attracted attention as an element that can generate electricity anywhere as long as there is light. In particular, a flexible photoelectric conversion element is highly expected because of its high efficiency, and is more expected because it can follow various curved surfaces and be applied to wearable devices.

[0004] For example, Non-Patent Documents 1 and 2 reported the results of a feasibility study on the use of a photoelectric conversion element for a wearable device.

[0005] In addition, an organic thin-film solar cell is highly expected as a flexible and highly efficient environmental power generation element, and in Patent Document 1, a photoelectric conversion element using a transparent substrate film as a substrate was proposed.

[0006] In a general organic thin-film solar cell, the photoelectric conversion element has a structure in which a first electrode, an electron transport layer, a photoelectric conversion layer, a hole transport layer, and a second electrode are sequentially stacked on a substrate serving as a support substrate. In order to increase the output of the photoelectric conversion element, a module structure in which a plurality of photoelectric conversion elements are manufactured on the same substrate and connected in series can be used. In this case, in order to connect the second electrode, which is the uppermost layer of the photoelectric conversion element, and the first electrode of an adjacent photoelectric conversion element, a through hole is provided, and a connection portion is formed in the through hole. Thus, when the through hole is formed to connect the second electrode and the first electrode, the second electrode is extended to be in contact with the first electrode for connection.

[0007]

Patent Document

[0008]

Patent Document 1

[0009]

Non-Patent Document

[0010]

Non-Patent Document 1

[0011]

Non-Patent Document 2

[0012] However, in a photoelectric conversion module having a plurality of photoelectric conversion elements with electrical connections, in a partial region of an electrode near a connection portion where the photoelectric conversion elements are connected in series, since a current in a direction opposite to the current direction during light irradiation, that is, a reverse current is generated, there is a problem that the difference in photoelectric conversion efficiency between a low illuminance environment and a high illuminance environment becomes large.

[0013] The present invention relates to a photoelectric conversion module having a plurality of photoelectric conversion elements with electrical connections, and is characterized in that:

[0014] The photoelectric conversion element sequentially has a first electrode, a photoelectric conversion layer, and a second electrode.

[0015] The photoelectric conversion module has a first photoelectric conversion element, a second photoelectric conversion element, and a connection portion that serially connects the first photoelectric conversion element and the second photoelectric conversion element.

[0016] The photoelectric conversion module has a first dividing portion between the first electrode constituting the first photoelectric conversion element and the first electrode constituting the second photoelectric conversion element.

[0017] The photoelectric conversion module has a second dividing portion between the second electrode constituting the first photoelectric conversion element and the second electrode constituting the second photoelectric conversion element.

[0018] The first electrode or the second electrode constituting the first photoelectric conversion element has a contact region that contacts the connection portion.

[0019] When the length in the connection direction of the first photoelectric conversion element and the second photoelectric conversion element in the contact region is set to X, and the length in the connection direction between the end portion on the second dividing portion side in the first dividing portion and the end portion on the first dividing portion side in the second dividing portion is set to Y, the value of X / (Y - X) is 0.3 or more.

[0020] According to the present invention, it is possible to provide a photoelectric conversion module in which the difference in photoelectric conversion efficiency between a low illuminance environment and a high illuminance environment is small. Brief Description of the Drawings

[0021] Figure 1 It is a cross-sectional schematic view showing an example of a photoelectric conversion module having a plurality of photoelectric conversion elements connected in series.

[0022] Figure 2 It is shown when viewed from the side of the second electrode 18 Figure 1Schematic diagram of an example of a partial structure of the photoelectric conversion module shown

[0023] Figure 3 Schematic diagram of an example of a photoelectric conversion module having two connection portions between a first photoelectric conversion element and a second photoelectric conversion element

[0024] Figure 4A Schematic diagram of an example of a manufacturing method of a photoelectric conversion module

[0025] Figure 4B Schematic diagram of an example of a manufacturing method of a photoelectric conversion module

[0026] Figure 4C Schematic diagram of an example of a manufacturing method of a photoelectric conversion module

[0027] Figure 4D Schematic diagram of an example of a manufacturing method of a photoelectric conversion module

[0028] Figure 4E Schematic diagram of an example of a manufacturing method of a photoelectric conversion module

[0029] Figure 4F Schematic diagram of an example of a manufacturing method of a photoelectric conversion module

[0030] Figure 4G Schematic diagram of an example of a manufacturing method of a photoelectric conversion module

[0031] Figure 4H Schematic diagram of an example of a manufacturing method of a photoelectric conversion module

[0032] Figure 4I Schematic diagram of an example of a manufacturing method of a photoelectric conversion module

[0033] Figure 4J Schematic diagram of an example of a manufacturing method of a photoelectric conversion module

[0034] Figure 4K Schematic diagram of an example of a manufacturing method of a photoelectric conversion module

[0035] Figure 4L Schematic diagram of an example of a manufacturing method of a photoelectric conversion module

[0036] Figure 4M Schematic diagram of an example of a manufacturing method of a photoelectric conversion module

[0037] Figure 5 Schematic diagram of an example of the basic structure of an electronic instrument

[0038] Figure 6It is a schematic diagram showing an example of the basic structure of an electronic instrument.

[0039] Figure 7 It is a schematic diagram showing an example of the basic structure of an electronic instrument.

[0040] Figure 8 It is a schematic diagram showing an example of the basic structure of a power supply module.

[0041] Figure 9 It is a schematic diagram showing an example of the basic structure of a power supply module.

[0042] Figure 10 It is a schematic diagram showing an example of the basic structure of a mouse for a personal computer.

[0043] Figure 11 It is showing Figure 10 An external view schematic diagram of an example of the mouse for a personal computer shown.

[0044] Figure 12 It is a schematic diagram showing an example of the basic structure of a keyboard for a personal computer.

[0045] Figure 13 It is showing Figure 12 An external view schematic diagram of an example of the keyboard for a personal computer shown.

[0046] Figure 14 It is showing Figure 12 An external view schematic diagram of another example of the keyboard for a personal computer shown.

[0047] Figure 15 It is a schematic diagram showing an example of the basic structure of a sensor.

[0048] Figure 16 It is a schematic diagram showing an example of sending data sensed and obtained by a sensor to a PC, a smart phone, etc. through wireless communication.

[0049] Figure 17 It is a schematic diagram showing an example of the basic structure of a turntable. Detailed implementation mode

[0050] Hereinafter, an example of an embodiment of the present invention will be described.

[0051] First, the photoelectric conversion element constituting the photoelectric conversion module of the present invention will be described, and then the photoelectric conversion module will be described.

[0052] <<Photoelectric conversion element>>

[0053] The so-called "photoelectric conversion element" is an element that converts light energy into electrical energy or converts electrical energy into light energy. Specific examples thereof include elements constituting solar cells, photodiodes, and the like.

[0054] The photoelectric conversion element has at least a first electrode, a photoelectric conversion layer, and a second electrode in sequence. The so-called "in sequence" means that these electrodes and layers may be arranged in the above order as a whole, and other layers or the like may also be inserted between the electrodes and layers. As an example of the case where other layers are inserted, a photoelectric conversion element having a first electrode, an electron transport layer, a photoelectric conversion layer, a hole transport layer, and a second electrode in sequence can be cited. In this case, other layers or the like may be further inserted between the electrodes and layers or between the layers. In addition, the so-called "in sequence" means that these electrodes and layers may be laminated in sequence starting from the first electrode side, or may be laminated in sequence starting from the second electrode side. Specifically, when viewed from the light incident surface side, the photoelectric conversion element may be laminated in the order of the first electrode, the photoelectric conversion layer, and the second electrode, or may be laminated in the order of the second electrode, the photoelectric conversion layer, and the first electrode. In addition, when the photoelectric conversion element has an electron transport layer and a hole transport layer, when viewed from the light incident surface side, the photoelectric conversion element may be laminated in the order of the first electrode, the electron transport layer, the photoelectric conversion layer, the hole transport layer, and the second electrode, or may be laminated in the order of the second electrode, the hole transport layer, the photoelectric conversion layer, the electron transport layer, and the first electrode. In the present invention, the case where the first electrode, the electron transport layer, the photoelectric conversion layer, the hole transport layer, and the second electrode are laminated in sequence when viewed from the light incident surface side is mainly described, but the photoelectric conversion element of the present invention is not limited thereto. Those skilled in the art can easily understand other embodiments from the above description, that is, the case where the second electrode, the hole transport layer, the photoelectric conversion layer, the electron transport layer, and the first electrode are laminated in sequence when viewed from the light incident surface side, etc.

[0055] The photoelectric conversion element may also have a substrate, a surface protective layer, a sealing member, a UV blocking layer, etc. as required.

[0056] When having a substrate, when viewed from the light incident surface side, the photoelectric conversion element preferably has a structure in which the substrate, the first electrode, the electron transport layer, the photoelectric conversion layer, the hole transport layer, and the second electrode are laminated in sequence, or a structure in which the substrate, the second electrode, the hole transport layer, the photoelectric conversion layer, the electron transport layer, and the first electrode are laminated in sequence.

[0057] <Substrate>

[0058] The so-called "substrate" refers to a member that supports each electrode and each layer constituting the photoelectric conversion element. From the viewpoint of improving the photoelectric conversion efficiency, the substrate preferably has high light transmittance, and more preferably is transparent. In addition, from the viewpoint of expanding the application range of the photoelectric conversion element, the substrate preferably has high flexibility.

[0059] As a substrate material having transparency and flexibility, examples include resin films such as polyethylene terephthalate and the like, polycarbonate, polyimide, polymethyl methacrylate, polysulfone, polyether ether ketone, and thin film glass having an average thickness of 200 μm or less. Among these materials, from the viewpoints of easy production and cost, polyester, polyimide resin film, and thin film glass are preferred.

[0060] As a substrate material having transparency but not having flexibility, examples include inorganic transparent crystals such as glass. Although these materials do not have flexibility, they have high flatness and are thus also preferred.

[0061] When using a resin film as the substrate, the resin film preferably has gas barrier properties. The so-called gas barrier property is a function of suppressing the permeation of water vapor, oxygen, or the like. As the resin film having gas barrier properties, a well-known resin film can be suitably used. Examples include an aluminum-coated resin film.

[0062] <First electrode>

[0063] The so-called "first electrode" refers to an electrode that captures electrons generated by photoelectric conversion. When the first electrode is provided on the light incident surface, from the viewpoint of improving the photoelectric conversion efficiency, the first electrode preferably has high light transmittance, and more preferably is transparent. However, when the first electrode is provided on the side opposite to the light incident surface, the light transmittance and transparency may be low.

[0064] As the first electrode having transparency, a transparent electrode that is transparent to visible light can be used. The transparent electrode is, for example, a structure in which a transparent conductive film, a metal thin film, and a transparent conductive film are laminated in this order. The two transparent conductive films sandwiching the metal thin film may be formed of the same material or different materials.

[0065] Examples of the material for the transparent conductive film include tin-doped indium oxide (abbreviated as ITO), indium zinc oxide (IZO), zinc oxide (ZnO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), tin oxide (SnO 2 ), silver nanowires, and nanocarbon (carbon nanotubes, graphene, etc.). Among these materials, tin-doped indium oxide (ITO), indium zinc oxide (IZO), and aluminum-doped zinc oxide (AZO) are preferred.

[0066] Examples of the material for the metal thin film include thin films formed of metals such as aluminum, copper, silver, gold, platinum, and nickel.

[0067] From the viewpoint of maintaining rigidity, the first electrode with transparency preferably uses a material integrated with the substrate. For example, FTO-coated glass, ITO-coated glass, aluminum-coated glass, FTO-coated transparent plastic film, ITO-coated transparent plastic film, ITO / silver / ITO laminated coated plastic film, etc. can be cited.

[0068] As materials for the first electrode without transparency, metals such as platinum, gold, silver, copper, and aluminum, and graphite, etc. can be cited.

[0069] The average thickness of the first electrode is preferably 5 nm or more and 10 μm or less, more preferably 50 nm or more and 1 μm or less.

[0070] The sheet resistance of the first electrode is preferably 50 Ω / square or less, more preferably 30 Ω / square or less, and further preferably 20 Ω / square or less.

[0071] When the first electrode has transparency, the light transmittance of the first electrode is preferably 60% or more, more preferably 70% or more, still more preferably 80% or more, and particularly preferably 90% or more. There is no particular limitation on the upper limit, and it can be appropriately selected according to the purpose.

[0072] The first electrode can be formed by a wet film-forming method, a dry film-forming method such as an evaporation method or a sputtering method, a printing method, etc.

[0073] <Electron transport layer>

[0074] The so-called "electron transport layer" is a layer that transports electrons generated in the photoelectric conversion layer and inhibits the intrusion of holes generated in the photoelectric conversion layer. The electron transport layer can have a single-layer structure or a structure with two or more layers. Hereinafter, as an example, the case of having a two-layer electron transport layer structure will be described. Specifically, it refers to a structure having a first electron transport layer and a second electron transport layer (also called an "intermediate layer") provided between the first electron transport layer and the photoelectric conversion layer. In the case of having a single-layer electron transport layer structure, a layer the same as the first electron transport layer is preferred.

[0075] - First electron transport layer -

[0076] The first electron transport layer is preferably a layer containing metal oxide particles.

[0077] As the metal oxide, oxides of titanium, zinc, lithium, tin, etc., and ITO, FTO, ATO, AZO, GZO, etc. can be cited. Among them, zinc oxide is preferred, and zinc oxide doped to improve conductivity is more preferred. As doped zinc oxide, for example, zinc oxide doped with aluminum, zinc oxide doped with gallium, and zinc oxide doped with lithium, etc. can be cited. And, as the metal oxide, a metal oxide using a metal alkoxide, etc. as a raw material can be used.

[0078] The average particle diameter of the metal oxide particles is preferably 1 nm or more and 50 nm or less, more preferably 5 nm or more and 20 nm or less.

[0079] The average particle diameter of the metal oxide particles is measured by randomly measuring the particle diameters of 100 or more metal oxide particles by the following method, for example, and calculating the average value. First, a dispersion liquid containing metal oxide particles is transferred to a glass atomizer using a micropipette. Next, the dispersion liquid is sprayed from the atomizer onto a TEM-use / collodion film grid to spread the dispersion liquid. The grid is carbon vapor-deposited by the PVD method, and an image of the metal oxide particles is obtained using an electron microscope. Image processing is performed on the obtained image to measure the particle diameter of the metal oxide particles. The particle diameter of the metal oxide particles can also be measured by observing the cross-section of the photoelectric conversion element with a scanning transmission electron microscope (TEM) and performing particle recognition using image processing. In addition, the particle size distribution can be measured by a laser diffraction / scattering method or the like. The method of intercepting the cross-section of the photoelectric conversion element, TEM observation, and measurement of the particle size distribution can be performed by known methods.

[0080] The average thickness of the first electron transport layer is preferably 1 nm or more and 300 nm or less, more preferably 10 nm or more and 150 nm or less.

[0081] As a method for manufacturing the first electron transport layer, a method of coating a dispersion liquid containing metal oxide particles and a dispersion medium and drying it can be cited. As the dispersion medium, alcohols such as methanol, ethanol, isopropyl alcohol, 1-propanol, 2-methoxyethanol, and 2-ethoxyethanol, and mixtures thereof can be cited.

[0082] - Second electron transport layer (intermediate layer)-

[0083] The second electron transport layer is preferably a layer containing an amine compound. As the amine compound, there is no particular limitation as long as it is a material that can improve the photoelectric conversion efficiency of the photoelectric conversion element by providing the second electron transport layer, and it is preferably an amine compound represented by the following general formula (4) or the like.

[0084]

Chemical formula 1

[0085]

[0086] In the general formula (4), R 4 and R 5 represent an alkyl group that may have a substituent and has 1 or more and 4 or less carbon atoms, or R 4 and R 5Bonded cyclic structural group, preferably an alkyl group having 1 or more and 4 or less carbon atoms which may have substituents, more preferably an alkyl group having 1 or more and 4 or less carbon atoms and no substituents. Examples of the above substituents include methyl, ethyl, hydroxyl, etc. In addition, the number of carbon atoms in the cyclic structure is preferably 3 or more and 6 or less. When R 4 and R 5 are alkyl groups having 1 or more and 4 or less carbon atoms which may have substituents, the alkyl groups in R 4 and R 5 may be the same or different.

[0087] In the general formula (4), X represents a divalent aromatic group having 6 or more and 14 or less carbon atoms or an alkyl group having 1 or more and 4 or less carbon atoms, preferably a divalent aromatic group having 6 or more and 14 or less carbon atoms.

[0088] In the general formula (4), A represents any one of the substituents shown in the following structural formulas (1) to (3), preferably the substituent shown in structural formula (1).

[0089]

Chemical formula 2

[0090] -COOH…Structural formula (1)

[0091]

Chemical formula 3

[0092] -P(=O)(OH) 2 …Structural formula (2)

[0093]

Chemical formula 4

[0094] -Si(OH) 3 …Structural formula (3)

[0095] As amine compounds other than the general formula (4), 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyldiethoxymethylsilane, 3-(2-aminoethylamino)propyltrimethoxysilane, 3-(2-aminoethylamino)propyldimethoxymethylsilane, 3-(2-aminoethylamino)propyltriethoxysilane, trimethoxy[3-(phenylamino)propyl]silane, trimethoxy[3-(methylamino)propyl]silane, bis[3-(trimethoxysilyl)propyl]amine, bis[3-(triethoxysilyl)propyl]amine, and N,N'-bis[3-(trimethoxysilyl)propyl]ethane-1,2-diamine, etc. can be cited.

[0096] As a method for manufacturing the second electron transport layer, for example, a method of coating a solution containing an amine compound by spin coating, dipping, etc. and drying it can be cited.

[0097] <Photoelectric conversion layer>

[0098] The so-called "photoelectric conversion layer" is a layer that generates electrons and holes by absorbing light. The photoelectric conversion layer contains two or more organic materials. Specifically, it contains a donor organic material (also referred to as a p-type organic semiconductor material) and an acceptor organic material (also referred to as an n-type organic semiconductor material). The donor organic material and the acceptor organic material can each use a variety of organic materials. Therefore, it is preferred that the photoelectric conversion layer contains three or more organic materials. In addition, in the photoelectric conversion layer, it is preferred to mix the donor organic material and the acceptor organic material to form a bulk heterostructure.

[0099] -Donor organic material-

[0100] The donor organic material is preferably a π-electron conjugated compound with a highest occupied molecular orbital (HOMO) energy level of 4.8 eV or more and 5.7 eV or less. More preferably, it is a π-electron conjugated compound with a highest occupied molecular orbital (HOMO) energy level of 5.1 eV or more and 5.5 eV or less, or a π-electron conjugated compound with a highest occupied molecular orbital (HOMO) energy level of 5.2 eV or more and 5.6 eV or less.

[0101] The highest occupied molecular orbital (HOMO) energy level can be obtained by measuring with a photoelectric emission spectroscopy method, cyclic voltammetry measurement, etc. Specifically, a device such as Riken Keiki AC-3 can be used for measurement.

[0102] As the donor organic material, for example, there can be mentioned polymer conjugated compounds obtained by coupling various aromatic derivatives (such as thiophene, fluorene, carbazole, thienothiophene, benzodithiophene, dithienosilole, quinoxaline, benzothiadiazole, etc.), and low molecular conjugated compounds such as porphyrins and phthalocyanines. In addition, the donor organic material can also be a donor-acceptor binding material type that has an electron-donating site and an electron-accepting site in the molecule.

[0103] When the number average molecular weight (Mn) of the donor organic material is a low molecular polymer, it is preferably 10,000 or less, more preferably 5,000 or less. When it is a high molecular polymer, it is preferably 10,000 or more.

[0104] As a preferred example of the donor organic material, there can be mentioned an organic material with a highest occupied molecular orbital (HOMO) energy level of 5.1 eV or more and 5.5 eV or less and a number average molecular weight (Mn) of 10,000 or less. As such an organic material, there can be mentioned a compound represented by the following general formula (1).

[0105]

Chemical formula 5

[0106]

[0107] In the general formula (1), R 1 represents an alkyl group having 2 or more and 8 or less carbon atoms.

[0108] In the general formula (1), n represents an integer of 1 or more and 3 or less.

[0109] In the general formula (1), Y represents a halogen atom.

[0110] In the general formula (1), m represents an integer of 0 or more and 4 or less.

[0111] In the general formula (1), X represents the following general formula (2) or the following general formula (3).

[0112]

Chemical formula 6

[0113]

[0114]

Chemical formula 7

[0115]

[0116] In the general formula (2), R 2 represents a linear or branched alkyl group, preferably a linear or branched alkyl group having 2 or more and 30 or less carbon atoms.

[0117] In the general formula (3), R 3 represents a linear or branched alkyl group, preferably a linear or branched alkyl group having 2 or more and 30 or less carbon atoms.

[0118] As another preferred example of the donor organic material, an organic material having a highest occupied molecular orbital (HOMO) energy level of 5.2 eV or more and 5.6 eV or less and a number average molecular weight (Mn) of 10,000 or more can be cited. It is preferable to use this organic material in combination with an organic material having a highest occupied molecular orbital (HOMO) energy level of 5.1 eV or more and 5.5 eV or less and a number average molecular weight (Mn) of 10,000 or less.

[0119] As an organic material having a highest occupied molecular orbital (HOMO) energy level of 5.2 eV or more and 5.6 eV or less and a number average molecular weight (Mn) of 10,000 or more, for example, 2,1,3 - benzothiadiazole - thiophene copolymers, quinoxaline - thiophene copolymers, thiophene - benzodithiophene copolymers, polyfluorene polymers, etc. can be cited.

[0120] The so-called 2,1,3-benzothiadiazole-thiophene copolymers refer to conjugated copolymers having a thiophene backbone and a 2,1,3-benzothiadiazole backbone as the main chain. Specific examples of the 2,1,3-benzothiadiazole-thiophene copolymers include the following general formulas (5) to (8), etc. In addition, n in the following general formulas (5) to (8) each independently represents an integer of 1 or more and 1000 or less.

[0121]

Chemical Formula 8

[0122]

[0123]

Chemical Formula 9

[0124]

[0125]

Chemical Formula 10

[0126]

[0127]

Chemical Formula 11

[0128]

[0129] The so-called quinoxaline-thiophene copolymers refer to conjugated copolymers having a thiophene backbone and a quinoxaline backbone as the main chain. Specific examples of the quinoxaline-thiophene copolymers include the following general formula (9), etc. In the following general formula (9), n represents an integer of 1 or more and 1000 or less.

[0130]

Chemical Formula 12

[0131]

[0132] The so-called thiophene-benzodithiophene copolymers refer to conjugated copolymers having a thiophene backbone and a benzodithiophene backbone as the main chain. Specific examples of the thiophene-benzodithiophene copolymers include the following general formulas (10) to (13), etc. In the following general formulas (10) to (13), n each independently represents an integer of 1 or more and 1000 or less.

[0133]

Chemical Formula 13

[0134]

[0135]

Chemical Formula 14

[0136]

[0137]

Chemical Formula 15

[0138]

[0139]

Chemical Formula 16

[0140]

[0141] -Acceptor-type organic material-

[0142] The acceptor-type organic material is preferably a π-electron conjugated compound having a lowest unoccupied molecular orbital (LUMO) energy level of 3.5 eV or more and 4.5 eV or less.

[0143] Examples of the acceptor-type organic material include fullerene or its derivatives, naphthalene tetracarboxylic diimide derivatives, perylene tetracarboxylic diimide derivatives, etc. Among them, fullerene derivatives are preferred.

[0144] Examples of the fullerene derivative include C 60 , phenyl-C 61 -methyl butyrate (a fullerene derivative described as PCBM,

[60] PCBM or PC 61 BM in known literature), C 70 , phenyl-C 71 -methyl butyrate (a fullerene derivative described as PCBM,

[70] PCBM or PC 71 BM in known literature), fullerene derivatives of fullerene pyrrolidines represented by the following general formula (14), etc. Fullerene derivatives of fullerene pyrrolidines represented by the following general formula (14) are preferred.

[0145]

Chemical formula 17

[0146]

[0147] In the general formula (14), Y 1 and Y 2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or an aralkyl group. However, Y 1 and Y 2 cannot both be hydrogen atoms. In addition, the alkyl group, alkenyl group, alkynyl group, aryl group, and aralkyl group may or may not have substituents.

[0148] Examples of the alkyl group in Y 1 and Y 2 preferably include an alkyl group having 1 or more and 22 or fewer carbon atoms, more preferably an alkyl group having 1 or more and 12 or fewer carbon atoms, and further preferably an alkyl group having 6 or more and 12 or fewer carbon atoms. These alkyl groups may be linear or branched, but linear is preferred. The alkyl group may further contain 1 or 2 or more hetero elements such as S and O in the carbon chain.

[0149] Examples of the alkyl group in Y 1 and Y 2The alkenyl group in [it] preferably has 2 or more and 10 or less carbon atoms. As more preferable specific examples, there may be mentioned linear or branched alkenyl groups having 2 or more and 4 or less carbon atoms, such as vinyl, 1-propenyl, allyl, isopropenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1-methyl-2-propenyl, 1,3-butadienyl, and the like.

[0150] As Y 1 and Y 2 The alkynyl group in [it] preferably has 1 or more and 10 or less carbon atoms. As more preferable specific examples, there may be mentioned linear or branched alkynyl groups having 2 or more and 4 or less carbon atoms, such as ethynyl, 1-propynyl, 2-propynyl, 1-methyl-2-propynyl, 1-butynyl, 2-butynyl, 3-butynyl, and the like.

[0151] As Y 1 and Y 2 The aryl group in [it] may include phenyl, naphthyl, anthryl, phenanthryl, and the like.

[0152] As Y 1 and Y 2 The aralkyl group in [it] may include aralkyl groups having 7 or more and 20 or less carbon atoms, such as 2-phenylethyl, benzyl, 1-phenylethyl, 3-phenylpropyl, 4-phenylbutyl, and the like.

[0153] When the alkyl, alkenyl, alkynyl, aryl, or aralkyl group in Y 1 and Y 2 has a substituent, specific examples of the substituent may include alkyl, alkoxycarbonyl, polyether group, alkanoyl, amino, carbamoyl, alkoxy, alkylthio, group: -CONHCOR' (wherein R' is an alkyl group), group: -C(=NR')-R" (wherein R' and R" are alkyl groups), group: -NR'=CR"R′″ (wherein R', R", and R′″ are alkyl groups), and the like.

[0154] Among the substituents in Y 1 and Y 2 as the polyether group, there may be mentioned, for example, a group represented by the following formula: Y 3 -(OY 4 ) n -O-. Here, Y 3 is a monovalent hydrocarbon group such as an alkyl group, and Y 4 is a divalent aliphatic hydrocarbon group. In the polyether group represented by the above formula, specific examples of the repeating unit represented by -(OY 4 ) n - may include -(OCH 2 ) n -, -(OC 2 H4 ) n -,-(OC 3 H 6 ) n - and other alkoxy chains.

[0155] The repeating number n of these repeating units is preferably 1 or more and 20 or less, more preferably 1 or more and 5 or less. The repeating unit represented by -(OY 4 ) n - may be the same repeating unit or may contain two or more different repeating units. Among the repeating units, -OC 2 H 4 - and -OC 3 H 6 - can be linear or branched.

[0156] Y 1 and Y 2 Among the substituents in, the alkyl group in the alkyl group, alkoxycarbonyl group, alkanoyl group, alkoxy group, alkylthio group, polyether group, group: -CONHCOR', group: -C(=NR')-R", and group: -NR'=CR"R′″ preferably has 1 or more and 22 or less carbon atoms, more preferably 1 or more and 12 or less carbon atoms, and further preferably 6 or more and 12 or less carbon atoms.

[0157] Among the substituents in Y 1 and Y 2 the amino group in the amino group and carbamoyl amino group preferably binds to an amino group having one or two or more alkyl groups having 1 or more and 20 or less carbon atoms.

[0158] In the general formula (14), Ar represents an aryl group. However, the aryl group may or may not have a substituent.

[0159] Examples of the aryl group as Ar include phenyl, naphthyl, anthranyl group, phenanthryl group, etc. Among them, phenyl is preferred.

[0160] When the aryl group of Ar has a substituent, specific examples of the substituent include, for example, aryl group, alkyl group, cyano group, alkoxy group, alkoxycarbonyl group, etc. Examples of the aryl group among these substituents include phenyl group, etc. In addition, the alkyl part of the alkyl group and alkoxy group among these substituents preferably has 1 or more and 22 or less carbon atoms. There is no particular limitation on the number and substitution position of these substituents. For example, 1 or more and 3 or less substituents can be present at any position.

[0161] -Average thickness of the photoelectric conversion layer-

[0162] The average thickness of the photoelectric conversion layer is preferably 50 nm or more and 400 nm or less, more preferably 60 nm or more and 250 nm or less. When the average thickness is 50 nm or more, there are sufficient carriers generated by the absorption of light by the photoelectric conversion layer. In addition, when the average thickness is 400 nm or less, a decrease in the carrier transport efficiency due to light absorption can be suppressed.

[0163] The average thickness of the photoelectric conversion layer can be calculated by randomly measuring the thickness of the photoelectric conversion layer at 9 points and obtaining the average value, for example, by the following method. First, a liquid containing the materials constituting the photoelectric conversion layer is coated on a substrate and dried, then wiped at an arbitrary point with a solvent, and the height of the wiped area is measured using DEKTAK manufactured by Bruker Corporation. This measured value is taken as the thickness. The average thickness of the photoelectric conversion layer can also be measured by observing the cross-section of the photoelectric conversion element with a scanning electron microscope (SEM) or a transmission electron microscope (TEM).

[0164] - Method for forming the bulk heterojunction in the photoelectric conversion layer -

[0165] The photoelectric conversion layer can be a layer having a flat bonding interface by sequentially laminating the various organic materials, but in order to increase the area of the bonding interface, it is preferable to form a bulk heterojunction in which each organic material has a three-dimensional mixed structure. Examples of the formation of the bulk heterojunction are as follows.

[0166] When the various organic materials are highly soluble materials, a solution in which the various organic materials are mixed in molecular form can be prepared by dissolving the various organic materials in a solvent, and after coating, it is dried to remove the solvent to form. In this case, the aggregation state of each organic material can also be optimized by further heat treatment.

[0167] On the other hand, when using organic materials with low solubility, a solution in which a part of the organic material is dissolved is prepared, and another part of the organic material is dispersed in the solution, and after coating, it is dried to remove the solvent to form. In this case, the aggregation state of each organic material can also be optimized by further heat treatment.

[0168] - Method for manufacturing the photoelectric conversion layer -

[0169] The manufacturing method of the photoelectric conversion layer includes a step of coating a liquid containing the respective organic materials. Examples of the coating method include spin coating method, blade coating method, slot die coating method, screen printing method, bar coating method, die coating method, printing transfer method, dip stretching method, inkjet method, spraying method, vacuum deposition method, etc. Among them, it can be appropriately selected according to the required characteristics of the photoelectric conversion layer to be manufactured, such as thickness control and orientation control.

[0170] For example, when using the spin coating method, it is preferable to use a solution containing each of the organic substances at a concentration of 5 mg / mL or more and 40 mg / mL or less. The concentration represents the total mass of various organic materials relative to the volume of the solution containing various organic materials. By setting the concentration as such, a homogeneous photoactive layer can be easily fabricated.

[0171] In addition, in order to remove the solvent or dispersion medium from the coated liquid containing each added organic material, an annealing treatment can be performed under reduced pressure or in an inert atmosphere (nitrogen or argon atmosphere). The temperature of the annealing treatment is preferably 40°C or more and 300°C or less, more preferably 50°C or more and 150°C or less. Since the annealing treatment increases the contact area by increasing the mutual penetration of the materials constituting the layer at the layer stacking interface between layers, thereby increasing the short-circuit current, it is preferable.

[0172] Examples of the solvent or dispersion medium for dissolving or dispersing each organic material include methanol, ethanol, butanol, toluene, xylene, o-chlorophenol, acetone, ethyl acetate, ethylene glycol, tetrahydrofuran, dichloromethane, chloroform, dichloroethane, chlorobenzene, dichlorobenzene, trichlorobenzene, o-dichlorobenzene, chloronaphthalene, dimethylformamide, dimethyl sulfoxide, N-methylpyrrolidone, and γ-butyrolactone. They can be used alone or in combination of two or more. Among them, chlorobenzene, chloroform, and o-dichlorobenzene are particularly preferred.

[0173] In addition, the solvent or dispersion medium may also contain various additives. As various additives, for example, diiodooctane, octanedithiol, etc. can be used.

[0174] <Hole transport layer>

[0175] The so-called "hole transport layer" is a layer that transports holes generated in the photoactive layer and inhibits the intrusion of electrons generated in the photoactive layer. The hole transport layer may have a structure of one layer or a structure of two or more layers. Hereinafter, a hole transport layer having a one-layer structure will be described as an example.

[0176] The hole transport layer is preferably a layer containing at least one of an organic compound and an inorganic compound having hole transport performance. Examples of the organic compound having hole transport properties include conductive polymers such as PEDOT:PSS (poly(3,4-ethylenedioxythiophene):polystyrene sulfonate), and aromatic amine derivatives. Examples of the inorganic compound having hole transport properties include molybdenum oxide, tungsten oxide, vanadium oxide, nickel oxide, copper(I) oxide, etc. Among these compounds having hole transport properties, molybdenum oxide, tungsten oxide, and vanadium oxide are preferred.

[0177] The average thickness of the hole transport layer is preferably 200 nm or less, more preferably 1 nm or more and 50 nm or less.

[0178] As a method for manufacturing a hole transport layer, a method of coating a liquid containing a hole transporting compound and a solvent or a dispersion medium and drying it can be cited. As the coating method, spin coating method, sol-gel method, slot die coating method, sputtering method, etc. can be cited.

[0179] <Second electrode>

[0180] The so-called "second electrode" is an electrode that captures holes generated by photoelectric conversion. When the second electrode is provided on the light incident surface, from the viewpoint of improving the photoelectric conversion efficiency, the second electrode preferably has a high light transmittance, and more preferably is transparent. However, when the second electrode is provided on the side opposite to the light incident surface, a lower light transmittance and transparency may be acceptable.

[0181] As the second electrode, the same electrode as the first electrode can be used, and thus the description thereof will be omitted.

[0182] <Surface protective layer (passivation layer)>

[0183] The so-called "surface protective layer" is a layer that prevents the electrode provided on the side opposite to the light incident surface from directly contacting the sealing member. In addition, the surface protective layer can also be a member that prevents the exposed surfaces of each of the stacked layers other than the electrode provided on the side opposite to the light incident surface from directly contacting the sealing member. The surface protective layer is also called a passivation layer.

[0184] Examples of the material for the surface protective layer include metal oxides such as 2 O 3 SiOx, SiOxNy, Al, etc., and polymers such as polyethylene, fluorine-based coating agents, and parylene. They can be used alone or in combination of two or more. Among them, metal oxides are preferred.

[0185] The average thickness of the surface protective layer is preferably 1 nm or more and 10 μm or less.

[0186] As a method for manufacturing the surface protective layer, vacuum deposition method, sputtering method, reactive sputtering method, MBE (molecular beam epitaxy) method, plasma CVD method, laser CVD method, thermal CVD method, gas source CVD method, coating method, printing method, transfer printing method, etc. can be cited.

[0187] <Sealing member>

[0188] The so-called "sealing member" is a member that is provided to cover the surface protective layer and suppress the intrusion of external substances such as water and oxygen into the photoelectric conversion element. The sealing member is preferably a film-like member having a gas barrier member that prevents external substances from intruding into the photoelectric conversion element and an adhesive member that adheres to the surface protective layer. When the sealing member is provided on the side opposite to the light incident surface, the sealing member may not have light transmittance or transparency.

[0189] The functions required for the gas barrier member are usually represented by, for example, the water vapor transmission rate and the oxygen transmission rate. The daily water vapor transmission rate according to JIS K7129 Method B is preferably, for example, 1×10 -2 g / m 2 or less, and the lower the better. According to JIS K7126-2, the daily oxygen transmission rate is preferably, for example, 1 cm 3 / m 2 ·atm or less, and the lower the better.

[0190] As the material of the adhesive member, general materials used for sealing organic electroluminescent elements, organic transistors, etc. can be used. Specifically, pressure-sensitive adhesive resins, thermosetting resins, thermoplastic resins, photocurable resins, etc. can be cited. Among them, a pressure-sensitive adhesive resin that does not require heating in the sealing process is preferred. More specifically, ethylene-vinyl acetate copolymer resin, styrene-isobutene resin, hydrocarbon resin, epoxy resin, polyester resin, acrylic resin, polyurethane resin, silicone resin, etc. can be cited. Various adhesiveness can be obtained by chemically modifying the main chain, side chain, and end of these resins and adjusting the molecular weight.

[0191] <UV blocking layer>

[0192] The so-called "UV blocking layer" is a layer provided on the light incident surface side to suppress the deterioration of the photoelectric conversion element caused by UV light. The UV blocking layer is preferably a film-like member that absorbs UV light. In addition, it is preferable to provide the UV blocking layer on the substrate located on the light incident surface side.

[0193] The performance required for the UV blocking layer is generally represented by the light transmittance, etc. The light transmittance for light with a wavelength of 370 nm or less is preferably less than 1%, for example. In addition, the light transmittance for light with a wavelength of 410 nm or less is preferably less than 1%, for example.

[0194] <Gas barrier layer>

[0195] The so-called "gas barrier layer" is a layer that suppresses the intrusion of external substances such as water and oxygen into the photoelectric conversion element. The gas barrier layer is preferably a continuous film. In addition, the gas barrier layer is preferably provided between the substrate and the first electrode.

[0196] The performance required for the gas barrier layer is generally represented by the water vapor transmission rate and the oxygen transmission rate. According to JIS K7129 Method B, the daily water vapor transmission rate is preferably, for example, 1×10 -2 g / m 2 or less, and the lower the better. According to JIS K7126-2, the daily oxygen transmission rate is preferably, for example, 1 cm 3 / m 2 ·atm or less, and the lower the better.

[0197] Examples of the material for the gas barrier layer include those containing SiO2 , SiNx, Al 2 O 3 , SiC, SiCN, SiOC, SiOAl materials, and siloxane materials.

[0198] <Other layers>

[0199] The photoelectric conversion element may also have other layers such as an insulating porous layer, a deterioration prevention layer, and a protective layer as needed.

[0200] <<Photoelectric conversion module>>

[0201] The so-called "photoelectric conversion module" has a plurality of electrically connected photoelectric conversion elements. The electrical connection can be either in series connection or in parallel connection of the photoelectric conversion elements. In addition, the photoelectric conversion module can have both a plurality of serially connected photoelectric conversion elements and a plurality of parallelly connected photoelectric conversion elements. The "connection" in the present invention is not limited to physical connection, but also includes electrical connection.

[0202] The photoelectric conversion module includes a plurality of photoelectric conversion elements and a connection portion for electrically connecting the photoelectric conversion elements, and may include other components as needed. In other words, the photoelectric conversion module includes at least a first photoelectric conversion element, a second photoelectric conversion element, and a connection portion for electrically connecting the first photoelectric conversion element and the second photoelectric conversion element, and may include other components as needed. As long as the photoelectric conversion element and the connection portion are components with different functions, the photoelectric conversion element and the connection portion can be separate components, but the photoelectric conversion element and the connection portion can also be continuous or integrated components. For example, an electrode or the like as a structure of the photoelectric conversion element and the connection portion can be separate components, or can be continuous or integrated components.

[0203] Refer to Figure 1 to illustrate an example of the structure of the photoelectric conversion module. Figure 1 is a cross-sectional schematic view of an example of a photoelectric conversion module having a plurality of serially connected photoelectric conversion elements.

[0204] As Figure 1 shown, the photoelectric conversion module 10 includes a first photoelectric conversion element 31, a second photoelectric conversion element 32, and a connection portion 16.

[0205] The first photoelectric conversion element 31 and the second photoelectric conversion element 32 each have a structure in which a UV blocking layer 22, a substrate 11, a gas barrier layer 23, a first electrode 12, a first electron transport layer 13, a second electron transport layer (intermediate layer) 14, a photoelectric conversion layer 15, a hole transport layer 17, a second electrode 18, a surface protection layer (passivation layer) 19, and a sealing member 21 are sequentially stacked from the light incident surface side in the stacking direction b (hereinafter, also referred to as "Structure A"). Here, the stacking direction b represents a direction perpendicular to the plane of each layer in the photoelectric conversion element.

[0206] The stacking order from the first electrode 12 to the second electrode 18 is as described above, but is not limited to this order. Specifically, the first photoelectric conversion element 31 and the second photoelectric conversion element 32 may also be structures in which a UV blocking layer 22, a substrate 11, a gas barrier layer 23, a second electrode 18, a hole transport layer 17, a photoelectric conversion layer 15, a second electron transport layer (intermediate layer) 14, a first electron transport layer 13, a first electrode 12, a surface protection layer (passivation layer) 19, and a sealing member 21 are sequentially stacked from the light incident surface side in the stacking direction b (hereinafter, also referred to as "Structure B"). In other words, compared with Figure 1 as shown, it is a structure in which the positions of the first electrode 12 and the second electrode 18 are interchanged, and the positions of the first electron transport layer 13 and the second electron transport layer (intermediate layer) 14 and the hole transport layer 17 are interchanged. In the present disclosure, as Figure 1 shown, the form in which the first electrode 12 is located on the light incident surface side compared with the second electrode 18 (the form of Structure A) will be mainly described. However, those skilled in the art can easily understand other forms from this description, that is, the form in which the second electrode 18 is located on the light incident surface side compared with the first electrode 12 (the form of Structure B).

[0207] The connecting portion 16 is a member that serially connects the first photoelectric conversion element 31 and the second photoelectric conversion element 32 along the connecting direction a. Here, the connecting direction a of the first photoelectric conversion element 31 and the second photoelectric conversion element 32 is the plane direction of the layer constituting the photoelectric conversion element (for example, the photoelectric conversion layer 15), and is the direction connecting the first photoelectric conversion element 31 and the second photoelectric conversion element 32. For example, it is the direction represented by the shortest distance straight line among the straight lines connecting the end of the first photoelectric conversion element 31 and the end of the second photoelectric conversion element 32, etc. To understand the connecting direction a, refer to Figure 2 as shown. Figure 2 is a schematic diagram showing an example when observing a partial structure of the photoelectric conversion module from the second electrode 18 side Figure 1 .

[0208] In addition, the connection part 16 has a structure continuous with the second electrode 18 and the hole transport layer 17 in the second photoelectric conversion element 32, and contacts the first electrode 12 in the first photoelectric conversion element 31 through this structure, so that the first photoelectric conversion element 31 and the second photoelectric conversion element 32 are connected in series. In this case, in the first electrode 12 constituting the first photoelectric conversion element 31, the region in contact with the connection part 16 is denoted as the contact region.

[0209] When the first photoelectric conversion element 31 and the second photoelectric conversion element 32 have Structure B, the connection part 16 has a structure continuous with the first electrode 12, the first electron transport layer 13, and the second electron transport layer (intermediate layer) 14 in the second photoelectric conversion element 32, and contacts the second electrode 18 in the first photoelectric conversion element 31 through this structure, so that the first photoelectric conversion element 31 and the second photoelectric conversion element 32 are connected in series. In this case, in the second electrode 18 constituting the first photoelectric conversion element 31, the region in contact with the connection part 16 is denoted as the contact region.

[0210] The structure of the connection part 16 will be described. The connection part 16 has a through-hole structure that penetrates through the respective layers of the photoelectric conversion element in the stacking direction b. Specifically, it has a through-hole structure that penetrates at least the photoelectric conversion layer 15 in the stacking direction b. More specifically, it has a through-hole structure that penetrates the photoelectric conversion layer 15, the second electron transport layer (intermediate layer) 14, and the first electron transport layer 13 in the stacking direction b.

[0211] Even in the form of Structure B, the connection part 16 has a through-hole structure that penetrates through the respective layers of the photoelectric conversion element in the stacking direction b. Specifically, it has a through-hole structure that penetrates at least the photoelectric conversion layer 15 in the stacking direction b. More specifically, it has a through-hole structure that penetrates the photoelectric conversion layer 15 and the hole transport layer 17 in the stacking direction b.

[0212] The material constituting the connection part 16 will be described. As described above, the connection part 16 has a structure continuous with the second electrode 18 and the hole transport layer 17 in the second photoelectric conversion element 32, and thus has the materials of the second electrode 18 and the hole transport layer 17. And, as Figure 1As shown, the outer peripheral portion of the connection portion 16 in contact with each layer and the electrode of the photoelectric conversion element is made of the material of the hole transport layer 17, and the inside of the connection portion 16 is made of the material of the second electrode 18. Therefore, the first electrode 12 in the first photoelectric conversion element 31 is in contact with the portion (outer peripheral portion) containing the material of the hole transport layer 17 that constitutes the connection portion 16. With such a structure, the inside of the connection portion 16 made of the material of the second electrode 18 is not in contact with the photoelectric conversion layer 15, the second electron transport layer (intermediate layer) 14, and the first electron transport layer 13, and can be connected to the first electrode 12 in the first photoelectric conversion element 31 through the portion containing the material of the hole transport layer 17.

[0213] In the form of Structure B, as described above, the connection portion 16 has a structure continuous with the first electrode 12, the first electron transport layer 13, and the second electron transport layer (intermediate layer) 14 in the second photoelectric conversion element 32, and thus has the materials of the first electrode 12, the first electron transport layer 13, and the second electron transport layer (intermediate layer) 14. And, the outer peripheral portion of the connection portion 16 in contact with each layer and the electrode of the photoelectric conversion element is made of the materials of the first electron transport layer 13 and the second electron transport layer (intermediate layer) 14, and the inside of the connection portion 16 is made of the material of the first electrode 12. Therefore, the second electrode 18 in the first photoelectric conversion element 31 is in contact with the portion (outer peripheral portion) containing the material of the first electron transport layer 13 or the second electron transport layer (intermediate layer) 14 that constitutes the connection portion 16. With such a structure, the inside of the connection portion 16 made of the material of the first electrode 12 is not in contact with the photoelectric conversion layer 15 and the hole transport layer 17, and can be connected to the second electrode 18 in the first photoelectric conversion element 31 through the portion containing the materials of the first electron transport layer 13 and the second electron transport layer (intermediate layer) 14.

[0214] A description is given of the peripheral region of the connection portion 16. As Figure 1 shown, the photoelectric conversion module 10 has a first dividing portion 12' between the first electrode 12 constituting the first photoelectric conversion element 31 and the first electrode 12 constituting the second photoelectric conversion element 32. And, the photoelectric conversion module 10 has a second dividing portion 12'' between the second electrode 18 constituting the first photoelectric conversion element 31 and the second electrode 18 constituting the second photoelectric conversion element 32. At this time, as Figure 1 shown, when the length in the connection direction a of the contact region is set to X, and the length in the connection direction between the end portion on the second dividing portion side in the first dividing portion 12' and the end portion on the first dividing portion side in the second dividing portion 12'' is set to Y, the value of X / (Y - X) is 0.3 or more. The value of X / (Y - X) is preferably 0.3 or more in the entire depth direction of the cross-section shown in Figure 1 but is not limited thereto. That is, in Figure 1It is sufficient that the depth direction of the cross section shown is at least 0.3 at one or more locations. As a method for adjusting the value of X / (Y-X), for example, a method of appropriately selecting the method of forming the through-hole provided in the previous stage of forming the connection portion can be cited. Specifically, it can be adjusted by selecting the laser diameter, the number of scans, etc. of the laser used when forming the through-hole.

[0215] Explain the reason for setting the value of X / (Y-X) to 0.3 or more. In Figure 1 In this case, the electrons captured by the first electrode 12 of the first photoelectric conversion element 31 move in the first electrode 12 in the direction of the connection portion 16, that is, in the positive direction (also referred to as the forward direction) of the connection direction a. On the other hand, in the intermediate region 33' located between the first photoelectric conversion element 31 and the second photoelectric conversion element 32, the electrons captured by the first electrode 12 move in the first electrode 12 in the direction of the connection portion 16, that is, in the negative direction (also referred to as the reverse direction) of the connection direction a. In addition, the holes captured by the second electrode 18 of the second photoelectric conversion element 32 move in the second electrode 18 in the direction of the connection portion 16, that is, in the negative direction (also referred to as the reverse direction) of the connection direction a. On the other hand, in the intermediate region 33” located between the first photoelectric conversion element 31 and the second photoelectric conversion element 32, the holes captured by the second electrode 18 move in the second electrode 18 in the direction of the connection portion 16, that is, in the positive direction (also referred to as the forward direction) of the connection direction a. In this way, in a part of the electrode, electrons move in a direction opposite to the direction (forward direction) in which electrons move during light irradiation (reverse direction), and holes move in a direction opposite to the direction (reverse direction) in which holes move during light irradiation (forward direction), and the current generated thereby, in other words, a reverse current in a direction opposite to the current direction during light irradiation is generated. And this reverse current is the main reason for reducing the photoelectric conversion efficiency in the photoelectric conversion module. In particular, compared with high illuminance (for example, at an illuminance of 10,000 lx), the photoelectric conversion efficiency is reduced at low illuminance (for example, at an illuminance of 200 lx). Therefore, there is a problem that the difference in photoelectric conversion efficiency between the low illuminance environment and the high illuminance environment becomes large. However, when the value of X / (Y-X) is 0.3 or more, the generation of the reverse current can be suppressed, the photoelectric conversion efficiency in the photoelectric conversion module can be improved, and thus the difference in photoelectric conversion efficiency between the low illuminance environment and the high illuminance environment can be reduced. Thereby, for example, a photoelectric conversion module that can be used in a wide illuminance region can be provided.

[0216] Even in the form of Structure B, like the form of Structure A, a reverse current is generated. Therefore, when the value of X / (Y-X) is 0.3 or more, the generation of the reverse current can be suppressed, and the difference in photoelectric conversion efficiency between the low illuminance environment and the high illuminance environment can be reduced.

[0217] The above length X is preferably 0.1 mm or more and 0.5 mm or less. When X is 0.1 mm or more, the function of the connection part (electrical connection between the photoelectric conversion elements) can be appropriately exerted. In addition, when X is 0.5 mm or less, the area capable of photoelectric conversion of the photoelectric conversion module can be sufficiently ensured.

[0218] In addition, the length X is preferably 1% or more, more preferably 5% or more, relative to the length in the connection direction of the photoelectric conversion elements. Further, the length X is preferably 20% or less, more preferably 10% or less, relative to the length in the connection direction of the photoelectric conversion elements.

[0219] The above length (Y - X) is preferably 0 mm or more and 0.5 mm or less. As described above, the smaller (Y - X) is, the more the generation of reverse current can be suppressed. Therefore, the smaller (Y - X) is, the better. Specifically, as described above, it is preferably 0.5 mm or less. However, when (Y - X) becomes small, there is a risk of damaging other structures such as the substrate during the formation of the through hole provided at the pre-stage of forming the connection part in the manufacturing process, and (Y - X) is preferably greater than 0 mm.

[0220] In addition, the length (Y - X) is preferably 20% or less, more preferably 10% or less, and further preferably 5% or less, relative to the length in the connection direction of the photoelectric conversion elements.

[0221] In the above description, the form having one connection part between the first photoelectric conversion element and the second photoelectric conversion element has been described. However, there may also be a plurality of connection parts between the first photoelectric conversion element and the second photoelectric conversion element. Therefore, refer to Figure 3 Describe the form having a plurality of connection parts. Figure 3 It is a schematic diagram showing an example of a photoelectric conversion module having two connection parts between the first photoelectric conversion element and the second photoelectric conversion element. Figure 3 Each structure of the shown photoelectric conversion module is the same as that of the Figure 1 shown photoelectric conversion module, so the description is omitted.

[0222] In addition, as Figure 3 shown, the value of X / (Y - X) is 0.3 or more, which is also the same as that of the Figure 1 shown photoelectric conversion module. In a photoelectric conversion module having a plurality of connection parts between the first photoelectric conversion element and the second photoelectric conversion element as Figure 3 shown, X represents the total length of the connection direction a of a plurality of contact regions.

[0223] <<Manufacturing method of the photoelectric conversion module>>

[0224] As an example of a method for manufacturing a photoelectric conversion module, a method for manufacturing a photoelectric conversion module having a plurality of serially connected photoelectric conversion elements will be described. In addition, in the present invention, an example of a method for manufacturing a photoelectric conversion module having a structure A as shown in Figure 1 will be described. And those skilled in the art can also easily understand an example of a method for manufacturing a photoelectric conversion module having a structure B from this description.

[0225] The method for manufacturing a photoelectric conversion module includes, for example, a first electrode forming step of forming a first electrode, an electron transport layer forming step of forming an electron transport layer on the first electrode, a photoelectric conversion layer forming step of forming a photoelectric conversion layer on the electron transport layer, a through-hole forming step of forming a through-hole penetrating the electron transport layer and the photoelectric conversion layer, a hole transport layer forming step of forming a hole transport layer on the photoelectric conversion layer and covering the exposed surfaces of the first electrode, the electron transport layer, and the photoelectric conversion layer in the through-hole with the material of the hole transport layer, a second electrode forming step of forming a second electrode on the hole transport layer and filling the through-hole with the second electrode material to form a through structure, and may include a surface protection layer forming step, a sealing member forming step, a UV blocking layer forming step, a gas barrier layer forming step, other steps, etc. as needed.

[0226] <First electrode forming step>

[0227] The method for manufacturing a photoelectric conversion module preferably includes a first electrode forming step of forming a first electrode. In addition, the first electrode is preferably formed on a substrate or on a gas barrier layer formed on the substrate.

[0228] The method for forming the first electrode is as described in the description of the first electrode.

[0229] <Electron transport layer forming step>

[0230] The method for manufacturing a photoelectric conversion module preferably includes an electron transport layer forming step of forming an electron transport layer on the first electrode. And when the electron transport layer has a first electron transport layer and a second electron transport layer (intermediate layer), the electron transport layer forming step preferably includes a first electron transport layer forming step of forming a first electron transport layer on the first electrode, and a second electron transport layer forming step of forming a second electron transport layer on the first electron transport layer.

[0231] The method for forming the electron transport layer is as described in the description of the electron transport layer.

[0232] <Photoelectric conversion layer forming step>

[0233] The method for manufacturing a photoelectric conversion module preferably includes a photoelectric conversion layer forming step of forming a photoelectric conversion layer on the electron transport layer.

[0234] The method for forming the photoelectric conversion layer is as described in the description of the photoelectric conversion layer.

[0235] <Through-hole forming process>

[0236] The manufacturing method of the photoelectric conversion module preferably includes a through-hole forming process for forming a through-hole that penetrates the electron transport layer and the photoelectric conversion layer. In the present invention, the so-called through-hole refers to a hole. For a photoelectric conversion module having a structure A as shown in Figure 1 FIG., it refers to a hole that penetrates the electron transport layer and the photoelectric conversion layer. The shape, size, etc. of the through-hole are not particularly limited as long as the first photoelectric conversion element and the second photoelectric conversion element can be electrically connected. Examples of the shape include a linear or circular shape when viewing the photoelectric conversion module from the second electrode side, and a rectangular or square shape when observing the cross-section of the photoelectric conversion module.

[0237] As a method for forming the through-hole, laser scribing or mechanical scribing can be cited.

[0238] <Hole transport layer forming process>

[0239] The manufacturing method of the photoelectric conversion module preferably includes a hole transport layer forming process for forming a hole transport layer on the photoelectric conversion layer and covering the exposed surfaces of the first electrode, the electron transport layer, and the photoelectric conversion layer in the through-hole with the material of the hole transport layer.

[0240] The formation method of the hole transport layer is as described in the description of the hole transport layer.

[0241] <Second electrode forming process>

[0242] The manufacturing method of the photoelectric conversion module preferably includes a second electrode forming process for forming a second electrode on the hole transport layer and filling the through-hole with the second electrode material to form a through structure. In the present invention, the so-called through structure refers to a structure body that fills the inside of the through-hole. For a photoelectric conversion module having a structure A as shown in Figure 1 FIG., it refers to a structure body formed by the hole transport layer material and the second electrode material.

[0243] The method for forming the second electrode is as described in the description of the second electrode.

[0244] <Surface protective layer forming process>

[0245] As needed, the manufacturing method of the photoelectric conversion module may also include a surface protective layer forming process for forming a surface protective layer on the electrode provided on the opposite side of the light incident surface. In addition, the surface protective layer forming process is preferably a process for forming a surface protective layer even for the exposed surfaces of each stacked layer.

[0246] <Sealing member forming process>

[0247] As needed, the method for manufacturing a photoelectric conversion module may also include a sealing member forming step of forming a sealing member to cover the surface protective layer.

[0248] <UV blocking layer forming step>

[0249] As needed, the method for manufacturing a photoelectric conversion module may also include a UV blocking layer forming step of forming a UV blocking layer on the light incident surface side.

[0250] <Gas barrier layer forming step>

[0251] As needed, the method for manufacturing a photoelectric conversion module may also include a gas barrier layer forming step of forming a gas barrier layer between the substrate and the first electrode.

[0252] <Other steps>

[0253] As needed, the method for manufacturing a photoelectric conversion module may also include an insulating porous layer forming step, a deterioration prevention layer forming step, a protective layer forming step, etc.

[0254] <Specific example of the method for manufacturing a photoelectric conversion module>

[0255] Refer to Figures 4A to 4M A detailed description will be given of an example of the method for manufacturing a photoelectric conversion module. Figures 4A~4M It is a schematic diagram showing an example of the method for manufacturing a photoelectric conversion module.

[0256] As Figure 4A shown, first, a first electrode 12 is formed on a substrate 11. When forming a plurality of photoelectric conversion elements on one substrate 11, as Figure 4B shown, a part of the formed first electrode 12 is removed to form a first dividing portion 12'. Next, as Figure 4C and Figure 4D shown, a first electron transport layer 13 and a second electron transport layer (intermediate layer) 14 are formed on the substrate 11 and the first electrode 12. Next, as Figure 4E shown, a photoelectric conversion layer 15 is formed on the formed second electron transport layer 14. After forming the photoelectric conversion layer 15, as Figure 4F shown, a set area is removed to penetrate through the first electron transport layer 13, the second electron transport layer 14, and the photoelectric conversion layer 15 formed on the first electrode 12 to form a through portion 16'. After forming the through portion 16', as Figure 4G and Figure 4H shown, a hole transport layer 17 and a second electrode 18 are formed. And, as the hole transport layer 17 and the second electrode 18 are formed, a structure composed of the material of the hole transport layer and the second electrode material is formed in the through portion 16', that is, a connection portion 16. When forming a plurality of photoelectric conversion elements on one substrate 11, asFigure 4I As shown, a second divided portion 12” is formed on the second electrode 18.

[0257] In the method for manufacturing a photoelectric conversion element of the present invention, as Figure 4J and Figure 4K shown, after forming a surface protective layer 19 on the second electrode 18, a sealing member 21 may also be provided to cover each electrode and each layer on the substrate. And, in the method for manufacturing a photoelectric conversion element of the present invention, as Figure 4L shown, a UV blocking layer 22 may also be provided on the exposed surface of the substrate 11, and as Figure 4M shown, a gas barrier layer 23 may also be provided between the first electrode 12 and the substrate 11.

[0258] <<Electronic Instrument>>

[0259] The electronic instrument at least includes the above-mentioned photoelectric conversion module and a device electrically connected to the photoelectric conversion module. The device electrically connected to the photoelectric conversion module is a device that is driven by the electric power generated by the photoelectric conversion module through photoelectric conversion, etc. In addition, the electronic instrument has multiple embodiments according to different uses. For example, the following first embodiment and second embodiment, etc. can be cited.

[0260] The first embodiment is an electronic instrument that includes a photoelectric conversion module and a device electrically connected to the photoelectric conversion module, and may also include other devices as needed.

[0261] The second embodiment is an electronic instrument that includes a photoelectric conversion module, a storage battery electrically connected to the photoelectric conversion module, and a device electrically connected to the photoelectric conversion module and the storage battery, and may also include other devices as needed.

[0262] <<Power Supply Module>>

[0263] The power supply module at least includes the above-mentioned photoelectric conversion module and a power supply IC (Integrated Circuit) electrically connected to the photoelectric conversion module, and may also include other devices as necessary.

[0264] <<Use>>

[0265] The photoelectric conversion module can be used as an independent power source, or can drive a device to operate using the electric power generated by photoelectric conversion. In addition, since the photoelectric conversion module can generate electricity through illumination, an electronic instrument does not need to be connected to an external power source or replace a battery. Therefore, an electronic instrument can be driven even in a place without a power supply device, can be carried around, and an electronic instrument can operate without replacing a battery even in a place where it is difficult to replace a battery. In addition, when an electronic instrument uses a dry battery, the electronic instrument becomes heavy and large in volume, which may prevent it from being installed on a wall or ceiling or carried around. However, the photoelectric conversion module has the advantages of being light in weight and thin, having a high degree of freedom in installation, being wearable, and being portable.

[0266] In this way, the photoelectric conversion module can be used as an independent power source. Therefore, an electronic instrument equipped with a photoelectric conversion module can be used for various purposes. For example, as uses of an electronic instrument equipped with a photoelectric conversion module, display devices such as electronic calculators, watches, mobile phones, electronic notebooks, and electronic paper can be cited, personal computer accessories such as personal computer mice and personal computer keyboards, various sensors such as temperature and humidity sensors and human body sensors, transmitters such as beacons and GPS (Global Positioning System), auxiliary lights, remote controls, etc.

[0267] The photoelectric conversion module of the present invention can generate electricity even under low-illuminance light. Examples of low illuminance can include the illuminance in an indoor environment illuminated by lighting, etc. Specifically, it is an illuminance of 20 lux or more and 1000 lux or less, which is very weak compared to direct sunlight (about 100,000 lux). That is, it can generate electricity even indoors or in even dim shadows, so the application range is very wide. In addition, different from dry batteries, it does not leak liquid, and different from button batteries, it cannot be swallowed by mistake, and has high safety. Furthermore, it can also be used as an auxiliary power source to extend the continuous use time of rechargeable or dry battery-powered electrical appliances. Thus, by combining the photoelectric conversion module with a device driven by the electric power generated by the photoelectric conversion of the photoelectric conversion module, an electronic instrument that is light in weight, easy to carry, has a high degree of freedom in installation, does not require replacement, has excellent safety, and effectively reduces the environmental load can be obtained. Therefore, an electronic instrument equipped with a photoelectric conversion module can be used for a variety of purposes.

[0268] Figure 5 It is a schematic diagram showing an example of the basic structure of an electronic instrument that combines a photoelectric conversion module and a device circuit driven by the electric power generated by the photoelectric conversion of the photoelectric conversion module. When the photoelectric conversion module is illuminated, it can generate electricity and extract electrical energy, and the device circuit can be driven to operate by this electric power.

[0269] However, the output of the photoelectric conversion module changes with the change of the environmental illuminance. Therefore, Figure 5 the electronic instrument shown may not be able to operate stably. In this case, as Figure 6As shown in the schematic diagram of an example of the basic structure of an electronic instrument, in order to provide a stable voltage to the device circuit side, it is preferable to add a power supply IC between the photoelectric conversion module and the device circuit.

[0270] In addition, the photoelectric conversion module can generate electricity as long as it irradiates light with sufficient illuminance. However, if the illuminance required for power generation is insufficient, the required power cannot be obtained, which is also a disadvantage of the photoelectric conversion module. In this case, as Figure 7 shown in the schematic diagram of an example of the basic structure of an electronic instrument, by setting a power storage device such as a capacitor between the power supply IC and the instrument circuit, the surplus power from the photoelectric conversion module can be used to charge the power storage device, so that even when the illuminance is too low or the photoelectric conversion module cannot receive light, the power stored in the power storage device can also supply power to the device circuit, enabling the device circuit to operate stably.

[0271] In this way, in an electronic instrument composed of a combination of a photoelectric conversion module and an instrument circuit, by combining a power supply IC and a power storage device, it can be driven even in an environment without a power supply, and can be stably driven without replacing the battery. Therefore, an electronic instrument equipped with a photoelectric conversion module can be used for various purposes.

[0272] In addition, the photoelectric conversion module can also be used as a power supply module. For example, as Figure 8 shown in the schematic diagram of an example of the basic structure of a power supply module, when the photoelectric conversion module is connected to a power supply IC, the power generated by the photoelectric conversion of the photoelectric conversion module can form a DC power supply module and can be supplied at a certain voltage level through the power supply IC.

[0273] Furthermore, as Figure 9 shown in the schematic diagram of an example of the basic structure of a power supply module, by adding a power storage device to the power supply IC, the power generated by the photoelectric conversion element can charge the power storage device, and a power supply module that can provide power even when the illuminance is too low or the photoelectric conversion element cannot receive light can be formed.

[0274] Figure 8 And Figure 9 shown, the power supply module is different from a traditional primary battery and can be used as a power supply module without replacing the battery. Therefore, an electronic instrument equipped with a photoelectric conversion module can be used for various purposes.

[0275] Hereinafter, the specific uses of an electronic instrument including the photoelectric conversion module and a device driven by electricity will be described.

[0276] <PC mouse use>

[0277] Figure 10It is a schematic diagram showing an example of the basic structure of a personal computer mouse (hereinafter also referred to as "mouse") as an example of an electronic instrument. As Figure 10 shown, the mouse includes a photoelectric conversion module, a power supply IC, a power storage device, and a mouse control circuit. Moreover, the power supply of the mouse control circuit is supplied by the connected photoelectric conversion module or power storage device. Thus, when the mouse is not in use, the power storage device can be charged, and this power can drive the mouse, and a mouse that does not require wiring or battery replacement can be obtained. In addition, since no battery is required, the weight can be reduced, which is suitable for use in a mouse.

[0278] Figure 11 It is showing Figure 10 an external schematic diagram of an example of the personal computer mouse shown. As Figure 11 shown, a photoelectric conversion module, a power supply IC, a power storage device, and a mouse control circuit are mounted inside the mouse. However, in order for the photoelectric conversion module to irradiate light, the upper part of the photoelectric conversion module is a transparent housing. The entire mouse housing can also be formed entirely of transparent resin. The configuration of the photoelectric conversion module is not limited to this. For example, it can also be arranged at a position where the photoelectric conversion module can be irradiated even if the mouse light is blocked by the hand.

[0279] <Usage of Personal Computer Keyboard>

[0280] Figure 12 It is a schematic diagram showing an example of the basic structure of a personal computer keyboard (hereinafter also referred to as "keyboard") as an example of an electronic instrument. As Figure 12 shown, the keyboard includes a photoelectric conversion module, a power supply IC, a power storage device, and a keyboard control circuit. Moreover, the power supply of the keyboard control circuit is supplied by the connected photoelectric conversion module or power storage device. Thus, when the keyboard is not in use, the power storage device can be charged, and this power can drive the keyboard, and a keyboard that does not require wiring or battery replacement can be obtained. In addition, since no battery is required, the weight can be reduced, which is suitable for use in a keyboard.

[0281] Figure 13 It is showing Figure 12 an external schematic diagram of an example of the personal computer keyboard shown. As Figure 13 shown, a photoelectric conversion module, a power supply IC, a power storage device, and a keyboard control circuit are mounted inside the keyboard. However, in order for the photoelectric conversion module to irradiate light, the upper part of the photoelectric conversion module is a transparent housing. The entire keyboard housing can also be formed entirely of transparent resin. The configuration of the photoelectric conversion module is not limited to this. For example, in the case of a small keyboard where the space for assembling the photoelectric conversion module is small, as Figure 14 shown in Figure 12 the external schematic diagram of another example of the personal computer keyboard shown, a small photoelectric conversion module can also be embedded in a part of the key.

[0282] <Use of the sensor>

[0283] Figure 15 is a schematic diagram showing an example of the basic structure of a sensor as an example of an electronic instrument. As Figure 15 shown, the sensor includes a photoelectric conversion module, a power supply IC, a power storage device, and a sensor circuit. In addition, the power supply of the sensor circuit is supplied by the connected photoelectric conversion module or power storage device. Thus, it is possible to configure the sensor without connecting an external power supply or replacing the battery. As the sensing target of the sensor, temperature and humidity, illuminance, human body, CO 2 , acceleration, UV, noise, geomagnetism, air pressure, etc. can be cited. As Figure 16 shown at A in

[0284] With the advent of the IoT (Internet of Things) society, the number of sensors is expected to increase rapidly. On the other hand, it takes a lot of time and effort to replace the batteries of countless sensors one by one, which is unrealistic. In addition, the sensors are installed in places where it is difficult to replace the batteries, such as on the ceiling or wall, which also reduces the operability. Therefore, the sensor powered by the photoelectric conversion module has great advantages. In addition, the photoelectric conversion module of the present invention can obtain a high output even under low illuminance, and the output has little dependence on the light incident angle, so it has the advantage of high installation freedom.

[0285] <Use of the turntable>

[0286] Figure 17 is a schematic diagram showing an example of the basic structure of a turntable as an example of an electronic instrument. As Figure 17 shown, the turntable includes a photoelectric conversion module, a power supply IC, a power storage device, and a turntable control circuit. In addition, the power supply of the turntable control circuit is supplied by the connected photoelectric conversion module or power storage device. Thus, it is possible to configure the turntable without connecting an external power supply or replacing the battery. The turntable is used for, for example, a display case for displaying goods, etc., but the power supply wiring is not good-looking, and when replacing the battery, the displayed items must be removed, which is time-consuming and laborious. Therefore, the turntable that can be powered by the photoelectric conversion module has great advantages.

[0287]

Embodiment

[0288] Hereinafter, embodiments of the present invention will be described, but the present invention is not limited to these embodiments.

[0289] (Embodiment 1)

[0290] <Manufacture of the photoelectric conversion module>

[0291] - Substrate with the first electrode -

[0292] First, obtain a polyethylene terephthalate (PET) substrate (50 mm × 50 mm) with a gas barrier film from Geomatec. Among them, an indium-doped tin oxide (ITO) film is formed by patterning. As Figure 4C shown, a first dividing portion is formed on the first electrode.

[0293] - Formation of the first electron transport layer -

[0294] Next, a zinc oxide nanoparticle solution (manufactured by Aldrich, average particle size 12 nm) is spin-coated on the ITO gas barrier film PET film (15 Ω / sq) at 3000 rpm and dried at 100 °C for 10 minutes to form an electron transport layer with an average thickness of 30 nm.

[0295] - Formation of the second electron transport layer (intermediate layer) -

[0296] Next, dimethylaminobenzoic acid (manufactured by Tokyo Chemical Industry Co., Ltd.) is dissolved in ethanol to adjust to a solution of 1 mg / ml, and spin-coated on the first electron transport layer at 3000 rpm to form a second electron transport layer with an average thickness of less than 10 nm.

[0297] - Formation of the photoactive layer -

[0298] Dissolve 15 mg of the following Example Compound 1 (number average molecular weight Mn = 1,554, highest occupied molecular orbital (HOMO) energy level: 5.13 eV), and 10 mg of the following Example Compound 3 in 1 mL of chloroform as the photoactive layer coating solution A.

[0299]

Chemical formula 18

[0300]

[0301]

Chemical formula 19

[0302]

[0303] Next, spin-coat the photoactive layer coating solution A on the intermediate layer at 600 rpm to form a photoactive layer with an average thickness of 200 nm.

[0304] - Formation of the through-hole portion -

[0305] Next, as a pre-stage of forming a connection portion between the series-connected photoelectric conversion elements, a through-hole portion is formed. The through-hole portion is formed (deletion) using laser scribing, and when the photoelectric conversion module is viewed from the second electrode side, the shape of the through-hole portion is rectangular. In addition, when the photoelectric conversion module is viewed from the second electrode side, the distance between the centers of adjacent through-hole portions is 5.6 mm. And in the subsequent process, when forming a connection portion in this through-hole portion, X is 0.12 mm, (Y - X) is 0.4 mm, and X / (Y - X) is 0.3.

[0306] - Formation of Hole Transport Layer, Second Electrode, and Connection Portion -

[0307] Next, a material for the hole transport layer composed of molybdenum oxide (manufactured by Kanto Chemical Co., Inc.) is vacuum-evaporated with an average thickness of 50 nm, and a second electrode material composed of silver is vacuum-evaporated with an average thickness of 100 nm in sequence on the photoelectric conversion layer and the through-hole portion to form a hole transport layer, a second electrode, and a connection portion. As Figure 4I shown, a second division portion is formed in the second electrode.

[0308] - Evaluation of Solar Cell Characteristics -

[0309] Under white LED illumination (color temperature 5000K, illuminance 200 lx., 10000 lx.), the current-voltage characteristics of each photoelectric conversion element constituting the fabricated photoelectric conversion module are detected. Specifically, the current-voltage between the first electrode of the target element and the first electrode of the adjacent element connected in series with the target element is measured. The photoelectric conversion efficiency is calculated from the obtained current-voltage curve. The white LED illumination uses a bulb-shaped LED lamp (manufactured by Toshiba Lighting & Technology Corporation, LDA11N-G / 100W), and the evaluation device (light source meter) uses KETSIGHT B2902A for measurement. The output of the LED light source is measured using a spectrocolor illuminometer C-7000 manufactured by Sekonic Corporation. The ratio of the photoelectric conversion efficiency at 200 lx. to the photoelectric conversion efficiency at 10000 lx. (200 lx. / 10000 lx.) is calculated, and the results are shown in Table 1.

[0310] - Reverse Current Value Evaluation -

[0311] The reverse current value near the connection portion of the fabricated photoelectric conversion module is detected using a laser-induced current measurement (LBIC) device manufactured by Spectro Instruments Co., Ltd. Specifically, a laser with a light wavelength of 532 nm is used as the evaluation light source, and the current value generated under the irradiation conditions of a laser output of 2.5 mW and a resolution of 100 μm is detected and obtained. The reverse current relative value is calculated with the reverse current detection value when X / (Y - X) is 0.1 as 1, and a comparative evaluation is performed. The results are shown in Table 1. When X / (Y - X) is 0.1, it represents the reverse current detection value in Comparative Example 1.

[0312] (Example 2)

[0313] <Fabrication of Photoelectric Conversion Module>

[0314] In the fabrication of the photoelectric conversion module of Example 1, except that X was changed to 0.12 mm, Y - X was changed to 0.2 mm, and X / (Y - X) was changed to 0.6, the rest was the same as in Example 1, and a photoelectric conversion module was fabricated.

[0315] In addition, similar to Example 1, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0316] (Example 3)

[0317] <Fabrication of Photoelectric Conversion Module>

[0318] In the fabrication of the photoelectric conversion module of Example 1, except that X was changed to 0.12 mm, Y - X was changed to 0.12 mm, and X / (Y - X) was changed to 1.0, the rest was the same as in Example 1, and a photoelectric conversion module was fabricated.

[0319] In addition, similar to Example 1, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0320] (Example 4)

[0321] <Fabrication of Photoelectric Conversion Module>

[0322] In the fabrication of the photoelectric conversion module of Example 1, except that the photoelectric conversion layer coating solution A was changed to the following photoelectric conversion layer coating solution B, the rest was the same as in Example 1, and a photoelectric conversion module was fabricated.

[0323] In addition, similar to Example 1, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0324] - Photoelectric Conversion Layer Coating Solution B -

[0325] Dissolve 15 mg of the following Example Compound 2 (number average molecular weight Mn = 1,463, highest occupied molecular orbital (HOMO) energy level: 5.27 eV) and 10 mg of the following Example Compound 3 in 1 mL of chloroform to obtain the photoelectric conversion layer coating solution B.

[0326]

Chemical Formula 20

[0327]

[0328]

Chemical Formula 21

[0329]

[0330] (Example 5)

[0331] (Fabrication of Photoelectric Conversion Module)

[0332] In the fabrication of the photoelectric conversion module in Example 4, except that X was changed to 0.12 mm, Y - X was changed to 0.12 mm, and X / (Y - X) was changed to 1.0, the rest was the same as in Example 4, and a photoelectric conversion module was fabricated.

[0333] In addition, similar to Example 4, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0334] (Example 6)

[0335] (Fabrication of Photoelectric Conversion Module)

[0336] In the fabrication of the photoelectric conversion module in Example 1, except that the coating solution A for the photoelectric conversion layer was changed to the following coating solution C for the photoelectric conversion layer, the rest was the same as in Example 1, and a photoelectric conversion module was fabricated.

[0337] In addition, similar to Example 1, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0338] -Coating Solution C for Photoelectric Conversion Layer-

[0339] 15 mg of the following Example Compound 4 (number - average molecular weight Mn = 2,029, highest occupied molecular orbital (HOMO) energy level: 5.50 eV) and 10 mg of the following Example Compound 3 were dissolved in 1 mL of chloroform to obtain the coating solution C for the photoelectric conversion layer.

[0340] [Chemical Formula 22]

[0341]

[0342] [Chemical Formula 23]

[0343]

[0344] (Example 7)

[0345] (Fabrication of Photoelectric Conversion Module)

[0346] In the fabrication of the photoelectric conversion module in Example 6, except that X was changed to 0.12 mm, Y - X was changed to 0.12 mm, and X / (Y - X) was changed to 1.0, the rest was the same as in Example 6, and a photoelectric conversion module was fabricated.

[0347] In addition, similar to Example 6, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0348] (Example 8)

[0349] (Fabrication of Photoelectric Conversion Module)

[0350] In the fabrication of the photoelectric conversion module of Example 1, except that the coating solution A for the photoelectric conversion layer was changed to the following coating solution D for the photoelectric conversion layer, the others were the same as in Example 1, and the photoelectric conversion module was fabricated.

[0351] In addition, similar to Example 1, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0352] - Coating Solution D for Photoelectric Conversion Layer -

[0353] 15 mg of the following Example Compound 1 (number average molecular weight Mn = 1,554, highest occupied molecular orbital (HOMO) energy level: 5.13 eV) and 10 mg of PC61BM (E100H, manufactured by Frontier Carbon Corporation) were dissolved in 1 mL of chloroform to obtain the coating solution D for the photoelectric conversion layer.

[0354] [Chemical Formula 24]

[0355]

[0356] (Example 9)

[0357] (Fabrication of Photoelectric Conversion Module)

[0358] In the fabrication of the photoelectric conversion module of Example 8, except that X was changed to 0.12 mm, Y - X was changed to 0.12 mm, and X / (Y - X) was changed to 1.0, the others were the same as in Example 8, and the photoelectric conversion module was fabricated.

[0359] In addition, similar to Example 8, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0360] (Example 10)

[0361] (Fabrication of Photoelectric Conversion Module)

[0362] In the fabrication of the photoelectric conversion module of Example 1, except that the coating solution A for the photoelectric conversion layer was changed to the following coating solution E for the photoelectric conversion layer, the others were the same as in Example 1, and the photoelectric conversion module was fabricated.

[0363] In addition, similar to Example 1, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0364] - Coating Solution E for Photoelectric Conversion Layer -

[0365] Dissolve 14 mg of the following Example Compound 1 (number-average molecular weight Mn = 1,554, highest occupied molecular orbital (HOMO) energy level: 5.13 eV), 1 mg of the following Example Compound 5 (number-average molecular weight Mn = 15,000, highest occupied molecular orbital (HOMO) energy level: 5.33 eV), and 10 mg of PC61BM (E100H, manufactured by Frontier Carbon Corporation) in 1 mL of chloroform to obtain the photoelectric conversion layer coating solution E.

[0366] [[Chemical Formula 25]]

[0367]

[0368] [[Chemical Formula 26]]

[0369]

[0370] (Example 11)

[0371] [[Fabrication of Photoelectric Conversion Module]]

[0372] In the fabrication of the photoelectric conversion module of Example 10, except that X was changed to 0.12 mm, Y - X was changed to 0.12 mm, and X / (Y - X) was changed to 1.0, the others were the same as in Example 10, and a photoelectric conversion module was fabricated.

[0373] In addition, in the same manner as in Example 10, the solar cell characteristics and reverse current value were evaluated. The results are shown in Table 1.

[0374] (Example 12)

[0375] [[Fabrication of Photoelectric Conversion Module]]

[0376] In the fabrication of the photoelectric conversion module of Example 1, except that the photoelectric conversion layer coating solution A was changed to the following photoelectric conversion layer coating solution F, the others were the same as in Example 1, and a photoelectric conversion module was fabricated.

[0377] In addition, in the same manner as in Example 1, the solar cell characteristics and reverse current value were evaluated. The results are shown in Table 1.

[0378] - Photoelectric Conversion Layer Coating Solution F -

[0379] Dissolve 14 mg of the following Example Compound 1 (number-average molecular weight Mn = 1,554, highest occupied molecular orbital (HOMO) energy level: 5.13 eV), 1 mg of the following Example Compound 6 (number-average molecular weight Mn = 15,000, highest occupied molecular orbital (HOMO) energy level: 5.33 eV), and 10 mg of PC61BM (E100H, manufactured by Frontier Carbon Corporation) in 1 mL of chloroform to obtain the photoelectric conversion layer coating solution F.

[0380] [Chemical Formula 27]

[0381]

[0382] [Chemical Formula 28]

[0383]

[0384] (Example 13)

[0385] ><Fabrication of Photoelectric Conversion Module>

[0386] In the fabrication of the photoelectric conversion module of Example 12, except for changing X to 0.12 mm, Y - X to 0.12 mm, and X / (Y - X) to 1.0, the other steps are the same as those in Example 12 to fabricate the photoelectric conversion module.

[0387] In addition, similar to Example 12, evaluate the solar cell characteristics and reverse current value. The results are shown in Table 1.

[0388] (Example 14)

[0389] ><Fabrication of Photoelectric Conversion Module>

[0390] In the fabrication of the photoelectric conversion module of Example 1, except for changing the photoelectric conversion layer coating solution A to the following photoelectric conversion layer coating solution G, the other steps are the same as those in Example 1 to fabricate the photoelectric conversion module.

[0391] In addition, similar to Example 1, evaluate the solar cell characteristics and reverse current value. The results are shown in Table 1.

[0392] - Photoelectric Conversion Layer Coating Solution G -

[0393] Dissolve 15 mg of the following Example Compound 7 (number-average molecular weight Mn = 1,806, highest occupied molecular orbital (HOMO) energy level: 5.20 eV) and 10 mg of the following Example Compound 3 in 1 mL of chloroform to obtain the photoelectric conversion layer coating solution G.

[0394] [Chemical Formula 29]

[0395]

[0396]

Chemical Formula 30

[0397]

[0398] (Example 15)

[0399] <Fabrication of Photoelectric Conversion Module>

[0400] In the fabrication of the photoelectric conversion module of Example 14, except that X was changed to 0.12 mm, Y - X was changed to 0.12 mm, and X / (Y - X) was changed to 1.0, the others were the same as in Example 14, and a photoelectric conversion module was fabricated.

[0401] In addition, similar to Example 14, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0402] (Example 16)

[0403] <Fabrication of Photoelectric Conversion Module>

[0404] In the fabrication of the photoelectric conversion module of Example 1, except that the photoelectric conversion layer coating solution A was changed to the following photoelectric conversion layer coating solution H, the others were the same as in Example 1, and a photoelectric conversion module was fabricated.

[0405] In addition, similar to Example 1, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0406] - Photoelectric Conversion Layer Coating Solution H -

[0407] 15 mg of the following Example Compound 8 (number - average molecular weight Mn = 1,886, highest occupied molecular orbital (HOMO) energy level: 5.00 eV) and 10 mg of the following Example Compound 3 were dissolved in 1 mL of chloroform to obtain the photoelectric conversion layer coating solution H.

[0408]

Chemical Formula 31

[0409]

[0410]

Chemical Formula 32

[0411]

[0412] (Example 17)

[0413] <Fabrication of Photoelectric Conversion Module>

[0414] In the production of the photoelectric conversion module of Example 16, except that X was changed to 0.12 mm, Y - X was changed to 0.12 mm, and X / (Y - X) was changed to 1.0, the rest was the same as in Example 16, and the photoelectric conversion module was produced.

[0415] In addition, similar to Example 16, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0416] (Example 18)

[0417] <Production of the photoelectric conversion module>

[0418] In the production of the photoelectric conversion module of Example 1, except that the coating liquid A for the photoelectric conversion layer was changed to the following coating liquid I for the photoelectric conversion layer, the rest was the same as in Example 1, and the photoelectric conversion module was produced.

[0419] In addition, similar to Example 1, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0420] -Coating liquid I for the photoelectric conversion layer-

[0421] 10 mg of P3HT (manufactured by Aldrich, number average molecular weight Mn = 54,000, highest occupied molecular orbital (HOMO) energy level: 5.00 eV) and 10 mg of PC61BM (E100H, manufactured by Frontier Carbon) were dissolved in 1 mL of chloroform to obtain the coating liquid I for the photoelectric conversion layer.

[0422] (Example 19)

[0423] <Production of the photoelectric conversion module>

[0424] In the production of the photoelectric conversion module of Example 18, except that X was changed to 0.12 mm, Y - X was changed to 0.12 mm, and X / (Y - X) was changed to 1.0, the rest was the same as in Example 18, and the photoelectric conversion module was produced.

[0425] In addition, similar to Example 18, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0426] (Example 20)

[0427] <Production of the photoelectric conversion module>

[0428] In the production of the photoelectric conversion module of Example 1, except that the second electron transport layer (intermediate layer) was not formed, the rest was the same as in Example 1, and the photoelectric conversion module was manufactured.

[0429] In addition, similar to Example 1, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0430] (Example 21)

[0431] (Fabrication of Photoelectric Conversion Module)

[0432] In the fabrication of the photoelectric conversion module of Example 20, except that X was changed to 0.12 mm, Y - X was changed to 0.12 mm, and X / (Y - X) was changed to 1.0, the others were the same as those in Example 20, and a photoelectric conversion module was fabricated.

[0433] In addition, in the same manner as in Example 20, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0434] (Example 22)

[0435] In the fabrication of the photoelectric conversion module of Example 10, except that X was changed to 0.12 mm, Y - X was changed to 0.01 mm, and X / (Y - X) was changed to 12.0, the others were the same as those in Example 10, and a photoelectric conversion module was fabricated.

[0436] In addition, in the same manner as in Example 10, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0437] (Example 23)

[0438] In the fabrication of the photoelectric conversion module of Example 10, except that X was changed to 0.4 mm, Y - X was changed to 0.01 mm, and X / (Y - X) was changed to 40.0, the others were the same as those in Example 10, and a photoelectric conversion module was fabricated.

[0439] In addition, in the same manner as in Example 10, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0440] (Example 24)

[0441] In the fabrication of the photoelectric conversion module of Example 12, except that X was changed to 0.12 mm, Y - X was changed to 0.01 mm, and X / (Y - X) was changed to 12.0, the others were the same as those in Example 12, and a photoelectric conversion module was fabricated.

[0442] In addition, in the same manner as in Example 12, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0443] (Example 25)

[0444] In the fabrication of the photoelectric conversion module of Example 12, except that X was changed to 0.4 mm, Y - X was changed to 0.01 mm, and X / (Y - X) was changed to 40.0, the others were the same as those in Example 12, and a photoelectric conversion module was fabricated.

[0445] In addition, similar to Example 12, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 1.

[0446] (Comparative Example 1)

[0447] <Fabrication of the Photoelectric Conversion Module>

[0448] In the fabrication of the photoelectric conversion module of Example 1, except that X was changed to 0.05 mm, Y - X was changed to 0.5 mm, and X / (Y - X) was changed to 0.1, the other procedures were the same as those in Example 1, and the photoelectric conversion module was fabricated.

[0449] In addition, similar to Example 1, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 2.

[0450] (Comparative Example 2)

[0451] <Fabrication of the Photoelectric Conversion Module>

[0452] In the fabrication of the photoelectric conversion module of Example 1, except that X was changed to 0.1 mm, Y - X was changed to 0.5 mm, and X / (Y - X) was changed to 0.2, the other procedures were the same as those in Example 1, and the photoelectric conversion module was fabricated.

[0453] In addition, similar to Example 1, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 2.

[0454] (Comparative Example 3)

[0455] <Fabrication of the Photoelectric Conversion Module>

[0456] In the fabrication of the photoelectric conversion module of Example 1, except that the through-hole (in other words, the connection part) was not formed, the other procedures were the same as those in Example 1, and the photoelectric conversion module was fabricated.

[0457] In addition, similar to Example 1, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 2.

[0458] (Comparative Example 4)

[0459] <Fabrication of the Photoelectric Conversion Module>

[0460] In the fabrication of the photoelectric conversion module of Example 1, except that the first dividing part and the second dividing part were not formed and the through-hole (in other words, the connection part) was not formed, the other procedures were the same as those in Example 1, and the photoelectric conversion module was fabricated.

[0461] In addition, similar to Example 1, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 2.

[0462] (Comparative Example 5)

[0463] <Fabrication of Photoelectric Conversion Module>

[0464] In the fabrication of the photoelectric conversion module of Example 4, except that X was changed to 0.1 mm, Y - X was changed to 0.5 mm, and X / (Y - X) was changed to 0.2, the rest was the same as in Example 4, and the photoelectric conversion module was fabricated.

[0465] In addition, similar to Example 4, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 2.

[0466] (Comparative Example 6)

[0467] <Fabrication of Photoelectric Conversion Module>

[0468] In the fabrication of the photoelectric conversion module of Example 6, except that X was changed to 0.1 mm, Y - X was changed to 0.5 mm, and X / (Y - X) was changed to 0.2, the rest was the same as in Example 6, and the photoelectric conversion module was fabricated.

[0469] In addition, similar to Example 6, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 2.

[0470] (Comparative Example 7)

[0471] <Fabrication of Photoelectric Conversion Module>

[0472] In the fabrication of the photoelectric conversion module of Example 8, except that X was changed to 0.1 mm, Y - X was changed to 0.5 mm, and X / (Y - X) was changed to 0.2, the rest was the same as in Example 8, and the photoelectric conversion module was fabricated.

[0473] In addition, similar to Example 8, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 2.

[0474] (Comparative Example 8)

[0475] <Fabrication of Photoelectric Conversion Module>

[0476] In the fabrication of the photoelectric conversion module of Example 10, except that X was changed to 0.1 mm, Y - X was changed to 0.5 mm, and X / (Y - X) was changed to 0.2, the rest was the same as in Example 10, and the photoelectric conversion module was fabricated.

[0477] In addition, similar to Example 10, the characteristics of the solar cell and the reverse current value were evaluated. The results are shown in Table 2.

[0478] (Comparative Example 9)

[0479] <Fabrication of Photoelectric Conversion Module>

[0480] In the production of the photoelectric conversion module of Example 12, except for changing X to 0.1 mm, Y - X to 0.5 mm, and X / (Y - X) to 0.2, the rest is the same as in Example 12, and the photoelectric conversion module is produced.

[0481] In addition, similar to Example 12, the solar cell characteristics and reverse current value are evaluated. The results are shown in Table 2.

[0482] (Comparative Example 10)

[0483] <Fabrication of the Photoelectric Conversion Module>

[0484] In the production of the photoelectric conversion module of Example 14, except for changing X to 0.1 mm, Y - X to 0.5 mm, and X / (Y - X) to 0.2, the rest is the same as in Example 14, and the photoelectric conversion module is produced.

[0485] In addition, similar to Example 14, the solar cell characteristics and reverse current value are evaluated. The results are shown in Table 2.

[0486] (Comparative Example 11)

[0487] <Fabrication of the Photoelectric Conversion Module>

[0488] In the production of the photoelectric conversion module of Example 16, except for changing X to 0.1 mm, Y - X to 0.5 mm, and X / (Y - X) to 0.2, the rest is the same as in Example 16, and the photoelectric conversion module is produced.

[0489] In addition, similar to Example 16, the solar cell characteristics and reverse current value are evaluated. The results are shown in Table 2.

[0490] (Comparative Example 12)

[0491] <Fabrication of the Photoelectric Conversion Module>

[0492] In the production of the photoelectric conversion module of Example 18, except for changing X to 0.1 mm, Y - X to 0.5 mm, and X / (Y - X) to 0.2, the rest is the same as in Example 18, and the photoelectric conversion module is produced.

[0493] In addition, similar to Example 18, the solar cell characteristics and reverse current value are evaluated. The results are shown in Table 2.

[0494] (Comparative Example 13)

[0495] <Fabrication of the Photoelectric Conversion Module>

[0496] In the production of the photoelectric conversion module of Example 20, except that X was changed to 0.1 mm, Y - X was changed to 0.5 mm, and X / (Y - X) was changed to 0.2, the rest was the same as in Example 20, and the photoelectric conversion module was produced.

[0497] In addition, the same as in Example 20, the solar cell characteristics and the reverse current value were evaluated. The results are shown in Table 2.

[0498] Table 1

[0499]

[0500] Table 2

[0501]

[0502] From the results of Table 1 and Table 2, it can be seen that when X / (Y - X) of the photoelectric conversion module of the present invention is 0.3 or more, the generation of reverse current can be suppressed, the photoelectric conversion efficiency in the photoelectric conversion module can be improved, and the difference in photoelectric conversion efficiency between low illuminance environment and high illuminance environment can be reduced.

Claims

1. A photoelectric conversion module having a plurality of electrically connected photoelectric conversion elements, characterized in that: The photoelectric conversion elements successively have a first electrode, a photoelectric conversion layer, and a second electrode, The photoelectric conversion module has a first photoelectric conversion element, a second photoelectric conversion element, and a connection portion that serially connects the first photoelectric conversion element and the second photoelectric conversion element, The photoelectric conversion module has a first dividing portion between the first electrode constituting the first photoelectric conversion element and the first electrode constituting the second photoelectric conversion element, The photoelectric conversion module has a second dividing portion between the second electrode constituting the first photoelectric conversion element and the second electrode constituting the second photoelectric conversion element, The first electrode or the second electrode constituting the first photoelectric conversion element has a contact area in contact with the connection portion, When the length in the connection direction of the first photoelectric conversion element and the second photoelectric conversion element is set to X in the contact area, and the length in the connection direction between the end portion on the second dividing portion side in the first dividing portion and the end portion on the first dividing portion side in the second dividing portion is set to Y, the value of X / (Y - X) is 0.3 or more.

2. The photoelectric conversion module according to claim 1, characterized in that, The photoelectric conversion elements successively have the first electrode, an electron transport layer, the photoelectric conversion layer, a hole transport layer, and the second electrode.

3. The photoelectric conversion module according to claim 2, characterized in that : The connection portion at least has a through structure that penetrates the photoelectric conversion layer in the stacking direction, When the contact area is located at the first electrode in the first photoelectric conversion element, the connection portion has the material of the hole transport layer and the material of the second electrode, When the contact area is located at the second electrode in the first photoelectric conversion element, the connection portion has the material of the electron transport layer and the material of the first electrode.

4. The photoelectric conversion module according to claim 3, characterized in that : When the contact area is located at the first electrode in the first photoelectric conversion element, the first electrode in the first photoelectric conversion element contacts the portion containing the material of the hole transport layer in the connection portion, When the contact area is located at the second electrode in the first photoelectric conversion element, the second electrode in the first photoelectric conversion element contacts the portion containing the material of the electron transport layer in the connection portion.

5. The photoelectric conversion module according to any one of claims 1 to 4, characterized in that, The photoelectric conversion layer contains an organic material having a highest occupied molecular orbital (HOMO) energy level of 5.1 eV or more and 5.5 eV or less and a number average molecular weight (Mn) of 10,000 or less.

6. The photoelectric conversion module according to any one of claims 1 to 4, characterized in that, The photoelectric conversion layer contains a compound represented by the following general formula (1): 【Chemical formula 1】 In the above general formula (1), R 1 represents an alkyl group having 2 to 8 carbon atoms, n represents an integer of 1 or more and 3 or less, X is represented by the following general formula (2) or the following general formula (3), Y represents a halogen atom, and m represents an integer of 0 or more and 4 or less. 【Chemical formula 2】 In the above general formula (2), R 2 represents a linear or branched alkyl group, 【Chemical formula 3】 In the above general formula (3), R 3 represents a linear or branched alkyl group.

7. The photoelectric conversion module according to any one of claims 1 to 4, characterized in that, The photoelectric conversion layer contains an organic material that is a fullerene derivative.

8. The optoelectronic conversion module according to any one of claims 2 to 4, wherein : the electron transport layer includes a first electron transport layer and a second electron transport layer provided between the first electron transport layer and the optoelectronic conversion layer, the first electron transport layer contains metal oxide particles, the second electron transport layer contains an amine compound represented by the following general formula (4): 【Chemical formula 4】 In the above general formula (4), R 4 and R 5 represent an alkyl group having 1 or more and 4 or less carbon atoms which may have substituents or a ring structure bonded to R 4 and R 5 ; X represents a divalent aromatic group having 6 or more and 14 or less carbon atoms or an alkyl group having 1 or more and 4 or less carbon atoms; A represents any one of the substituents represented by the following structural formulas (1) to (3): 【Chemical formula 5】 -COOH… Structural formula (1) 【Chemical formula 6】 -P(=O)(OH) 2 ... Structural formula (2) 【Chemical formula 7】 -Si(OH) 3 … Structural formula (3).

9. The optoelectronic conversion module according to any one of claims 1 to 4, wherein the optoelectronic conversion layer contains an organic material having a highest occupied molecular orbital (HOMO) energy level of 5.1 eV or more and 5.5 eV or less and a number average molecular weight (Mn) of 10,000 or less, and an organic material having a highest occupied molecular orbital (HOMO) energy level of 5.2 eV or more and 5.6 eV or less and a number average molecular weight (Mn) of 10,000 or more.

10. An electronic instrument, wherein , comprising: the optoelectronic conversion module according to any one of claims 1 to 9, and a device electrically connected to the optoelectronic conversion module.

11. An electronic instrument, wherein , comprising: the optoelectronic conversion module according to any one of claims 1 to 9; a storage battery electrically connected to the optoelectronic conversion module; and a device electrically connected to the optoelectronic conversion module and the storage battery.

12. A power supply module, wherein , comprising: the optoelectronic conversion module according to any one of claims 1 to 9, and a power supply IC electrically connected to the optoelectronic conversion module.

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